TW202212056A - Polishing device, treatment system, and polishing method - Google Patents

Abstract

The present invention realizes a polishing device that is suitable for surface reference polishing. A polishing device 100 includes: a plurality of substrate holding mechanisms 200 disposed along a first direction (X direction) of a substrate 300; a plurality of polishing heads 201 disposed along a second direction (Y direction) intersecting the first direction (X direction); a stage 202 that faces the plurality of polishing heads 201 across the substrate 300 and that extends in the second direction (Y direction); and drive mechanisms 500, 600 that cause the plurality of polishing heads 201 and the stage 202 to move in the first direction (X direction).

Description

Grinding device, processing system, and grinding method

The present invention relates to a grinding device, a processing system, and a grinding method. This application claims priority based on Japanese Patent Application No. 2020-092211 filed on May 27, 2020. The entire disclosure including the specification, scope of application, drawings, and abstract of Japanese Patent Application No. 2020-092211 is incorporated herein by reference in its entirety.

One of the substrate polishing apparatuses used in the semiconductor processing process is a CMP (Chemical Mechanical Polishing, chemical mechanical polishing) apparatus. CMP apparatuses are roughly classified into "face-up type (the method in which the substrate's polished surface faces up)" and "face-down type (the method in which the substrate's polished surface faces down)" according to the direction in which the polished surface of the substrate faces. )".

Patent Document 1 discloses a face-up type CMP apparatus. The CMP apparatus can perform backside reference grinding. That is, in this CMP apparatus, the base portion supports the opposite side (back surface) of the surface to be polished of the rectangular substrate, and the substrate is pressed against the base portion by a plurality of polishing heads with a diameter smaller than that of the substrate, and polishing is performed so that the entire substrate reaches a certain level. thickness. [Prior Art Literature] [Patent Literature]

[Patent Document 1] Japanese Patent Publication No. 2009-502721

(The problem that the invention intends to solve)

As mentioned above, the face-up type CMP apparatus in the past used backside reference polishing, and was not suitable for surface reference polishing.

That is, the so-called surface reference polishing is a method in which the polishing head is used as the polishing reference, and the substrate is pressed against the polishing head from the opposite side (back surface) of the polished surface of the substrate, and a certain thickness is removed everywhere on the entire substrate. In order to perform surface reference polishing using a conventional face-up type CMP apparatus, for example, it is considered to press the back surface of the substrate with a gas bag or the like. However, at this time, since the diameter of the polishing head is smaller than that of the substrate, the area where the polishing head of the substrate exists is also pressed by the air bag, which may cause damage to the substrate. Therefore, it is difficult for the face-up type CMP apparatus to meet the requirement of surface benchmark grinding in the past.

Therefore, an object of the present application is to realize a polishing apparatus, a processing system, and a polishing method suitable for surface benchmark polishing. (means to solve the problem)

An embodiment of the present application discloses a polishing apparatus, which includes: a plurality of substrate holding mechanisms, which are arranged along a first direction of the substrate; and a plurality of polishing heads, which are arranged along a second direction crossing the first direction. The stage is opposite to the plurality of grinding heads and extends in the second direction; and a drive mechanism is used to move the plurality of grinding heads and the stage in the first direction.

Hereinafter, an embodiment of the present invention will be described with reference to the drawings. However, the schema used is a schema diagram. Therefore, the size, position and shape of the parts shown in the illustration may be different from the size, position and shape of the actual device.

First, the outline of the grinding|polishing apparatus of embodiment of this invention is demonstrated using FIG. 1. FIG. FIG. 1 is a schematic diagram showing a configuration of a polishing apparatus according to an embodiment of the present invention. The polishing apparatus of the present embodiment is assumed to be a face-up type chemical mechanical polishing apparatus (hereinafter referred to as a CMP apparatus), but it may be a mechanical polishing apparatus that does not use a polishing liquid containing abrasive particles. The so-called face-up type polishing apparatus here is an apparatus that polishes the substrate with the surface to be polished (surface to be polished) of the substrate facing upward.

As shown in FIG. 1 , the polishing apparatus 100 includes a substrate holding mechanism 200 , a polishing head 201 , and a stage 202 . The substrate holding mechanism 200 is a member for fixing the substrate 300 to prevent movement during polishing. The polishing head 201 is disposed above the substrate 300 and used for polishing the components of the substrate 300 . The stage 202 is provided below the substrate 300 so as to sandwich the substrate 300 together with the polishing head 201 , and is a member for bringing the substrate 300 into contact with the polishing head 201 .

The substrate holding mechanism 200 mounts and supports the substrate 300 to be polished. The substrate holding mechanism 200 includes a suction member 301 , and thus, by sucking the substrate 300 , the substrate 300 is held without movement during polishing. The suction member 301 is assumed to be a vacuum suction pad or the like, but the substrate 300 may be held by other mechanisms. The adsorption member 301 can be appropriately replaced when its performance is degraded after repeated use.

Since the part where the substrate holding mechanism 200 holds the substrate 300 is disturbed by the stage 202 , the grinding head 201 cannot be used for grinding. Although the substrate 300 may be provided with an area that does not require polishing as a processing area to hold the area, when the substrate needs to be fully polished, the substrate holding mechanism 200 may interfere with the polishing head 201 or the stage 202 .

Therefore, it is also possible to divide the substrate holding mechanism 200 and divide the regions of the substrates 300 to be held separately. Thereby, regarding the part polished by the polishing head 201 and the stage 202 , the substrate can be held only at the part separated from the polishing head 201 and the stage 202 by withdrawing the substrate holding mechanism 200 . Specifically, the polishing apparatus 100 of the present embodiment includes a plurality of substrate holding mechanisms 200 arranged at intervals along the longitudinal direction of the rectangular substrate 300 .

After the polishing is completed, in order to replace the substrate 300 , the substrate holding mechanism 200 can attach and detach the substrate 300 , and the adsorption member 301 can release the adsorption of the substrate 300 .

The grinding head 201 is configured to be rotated by the rotating mechanism 204 through the rotating shaft 203 . The rotating mechanism 204 can drive the grinding head 201 at any number of revolutions. In addition, a grinding tool 302 is installed under the grinding head 201 . The polishing tool 302 is assumed to be a grindstone used for mechanical polishing, or a polishing pad used in a CMP apparatus, but other tools may be used. The polishing tool 302 rotates with the rotation of the polishing head 201, and polishes the substrate 300 by sliding repeatedly with the surface of the substrate. The grinding tool 302 is a consumable item, and is appropriately replaced when worn out due to repeated use. In addition, there are many types of grinding tools 302, and a suitable one can be selected according to the grinding object and the purpose.

The polishing head 201 includes a chemical liquid supply hole 205 from which the chemical liquid is supplied during polishing. The chemical solution supply hole 205 is connected to the chemical solution supply device 206 . The medicinal solution supply device 206 maintains the quality of the medicinal solution, and sends the medicinal fluid pressure to the medicinal solution supply hole 205 . The chemical solution supply device 206 may be built in the polishing device 100, or may be provided externally as a separate device. In the case of CMP, the chemical liquid may be a polishing liquid containing abrasive grains. In the case of mechanical grinding, the liquid medicine can also be water or pure water.

During polishing, the polishing head 201 rotates to slide the polishing tool 302 against the substrate 300 . At this time, since the substrate 300 is inactive, the relative speed between the polishing tool 302 and the substrate 300 near the center of the polishing head 201 is reduced, and the substrate 300 is hardly polished. Therefore, the polishing head 201 can polish the entire substrate by moving horizontally along the substrate 300 . At this time, the stage 202 follows the polishing head 201 all the way to just below the polishing head 201 .

The diameter of the polishing head 201 is 300 hours smaller than that of the substrate, and it should take time to polish the entire substrate. Therefore, for the purpose of shortening the polishing time, the polishing apparatus 100 may also include a plurality of polishing heads 201 , and grind the substrate 300 by juxtaposing them. At this time, the polishing apparatus 100 may include a plurality of stages 202 .

The polishing head 201 includes a vertical movement mechanism 207 for absorbing the difference in thickness of the substrate 300 and the thickness of the polishing tool 302 . Before the polishing apparatus 100 starts polishing, the polishing head 201 is lowered to detect the contact between the polishing tool 302 and the substrate 300 . When the vertical movement mechanism 207 uses a motor, the polishing head 201 is lowered, and when the driving current exceeds a certain value, it can be determined that the polishing tool 302 has come into contact with the substrate 300 . Thereby, even if the thickness of the substrate 300 to be polished is changed, or the polishing tool 302 is worn and thinned, the polishing head 201 can still be arranged at an appropriate height.

The stage 202 bears the reaction force of the force of the substrate 300 contacting the polishing head 201 . The shape of the stage 202 may be a platform with high surface accuracy and rigidity according to the purpose of the polishing apparatus, or a structure that changes along the shape of the substrate may be formed such as an air bag.

In addition, during polishing, the stage 202 moves following the polishing head 201 . In other words, since the stage 202 moves while being in contact with the substrate 300 , the substrate 300 always slides on the upper surface of the stage 202 . Therefore, the upper surface of the stage 202 should have low frictional resistance and high wear resistance. When the carrier 202 cannot be made of such a material, the protective plate 303 with these properties can also be attached to the upper surface of the carrier 202, and the protection plate 303 can be replaced after it is aged.

The polishing apparatus 100 includes a pressing mechanism 208 for making the polishing tool 302 contact the substrate 300 by sandwiching the substrate 300 with the polishing head 201 and the stage 202 . The pressing mechanism 208 can also be on the side of the polishing head above the substrate, or on the side of the stage below the substrate. When performing surface reference polishing, the pressing mechanism 208 is provided on the stage side, and when performing back surface reference polishing, the pressing mechanism 208 is provided on the polishing head side. The up-and-down movement mechanism 207 of the polishing head 201 may also serve as the pressing mechanism 208 . When the stage 202 is in the form of a balloon, the substrate 300 may be pressed by air pressure, so the stage 202 may also serve as the pressing mechanism 208 .

The polishing rate (the amount of polishing per unit time) can be controlled by controlling the pressing force of the pressing mechanism 208, the number of revolutions of the rotating mechanism 204 that rotates the polishing head 201, and the speed at which the polishing head 201 is driven horizontally along the substrate 300. . These controls are achieved by the control unit 209 .

FIG. 2 is a schematic diagram showing the state of the polishing head 201 when polishing the outer periphery of the substrate. When polishing the outer periphery of the substrate, as shown in FIG. 2 , the polishing head 201 is inclined with respect to the substrate 300 , which may over-polish the end of the substrate. In addition, when the carrier 202 is in the shape of an air bag, the inflated air bag may contact the grinding head 201 and cause damage.

Therefore, the polishing apparatus 100 may also include a mask 210 as shown in FIG. 3 . FIG. 3 is a schematic diagram showing the state of the polishing head 201 when polishing the outer periphery of the substrate. The function of the mask 210 is not appropriate if it is not the same thickness as the substrate 300 , so it is necessary to replace the mask 210 with an appropriate thickness according to the thickness of the substrate 300 . In addition, since the mask 210 loses its function even if it is worn down during grinding, the mask 210 needs to be made of a material with high wear resistance, or the surface of the mask 210 needs to be coated with such a material.

When the mask 210 is not provided, as shown in FIG. 2 , a part of the polishing tool 302 is pressed against the substrate 300 . At this time, when the entire polishing tool 302 contacts the substrate 300 and presses the substrate 300 with the same force, the pressing force is concentrated on the contact portion, resulting in an extreme increase in the polishing rate. In order to avoid this situation, when the mask 210 is not provided, the control unit 209 can also control the pressing force of the pressing mechanism 208 according to the area of the polishing tool 302 in contact with the substrate 300 .

Next, the processing system including the polishing apparatus will be described. FIG. 4 is a schematic diagram showing the configuration of a processing system 1000 including a polishing apparatus. When grinding is performed continuously, the grinding tool 302 deteriorates and the grinding rate gradually decreases. In order to avoid this situation, as shown in FIG. 4 , the grinding device 100 may also include a dressing (dressing) member 211 for dressing the grinding tool 302 . Generally, diamond or ceramic-based grindstones are used for dressing tools, but other mechanisms may also be used to dress the grinding tools 302 .

In addition, when the grinding device 100 is provided with a plurality of grinding heads 201, a single tool dressing member 211 can be used alternately. However, since grinding is not performed in the tool dressing unit, the throughput is reduced, so the grinding head can also be provided with a grinding head. 201 equal number of tool dressing members 211.

The time to use the tool dressing member 211 may be performed during the period of finishing polishing and replacing the substrate 300. However, in the configuration of polishing a large substrate with a pad with a small diameter, when the polishing tool 302 cannot be used for a short period of time, the polishing may be performed during the polishing process. During the substrate, trimming of the abrasive tool 302 is performed using the tool trimming member 211 as appropriate.

The polishing apparatus 100 may also be provided with a sensor 212 for measuring the polishing amount. The sensor 212 can also be used to measure and compare the film thickness on the surface of the substrate before and after polishing to measure the amount of polishing, or to determine whether there is any remaining coating on the substrate, or whether all the coating has been removed to complete the polishing. Way.

The control unit 209 can also control the number of revolutions of the rotating mechanism, the pressing force of the pressing mechanism, and the horizontal moving speed of the grinding head according to the film thickness data obtained by the sensor 212, so as to adjust the grinding rate to any grinding rate. Controls how to grind uniformly over the entire substrate.

The substrate 300 after polishing needs to be rinsed with the chemical solution quickly. Accordingly, the processing system 1000 includes a cleaning device 213 for cleaning the substrate polished by the polishing device 100 . The cleaning device 213 may use a chemical solution, pure water, or a mixed fluid of pure water and gas for cleaning the substrate. The cleaning of the substrate can also be performed at the same time as the polishing, but an independent unit can also be provided, and after the polishing is completed, the substrate 300 is transported there to be cleaned there. At this time, the processing system includes a transfer device 214 for transferring the substrate 300 between the polishing device 100 and the cleaning device 213 .

The processing system 1000 includes a drying device 215 for drying the substrate 300 cleaned by the cleaning device 213 because water marks (drying marks) remain on the substrate when the substrate 300 wet with water is naturally dried. The water marks are generated by the substances remaining in the moisture on the substrate due to the concentration of the surface tension of the water on the outer periphery of the water droplets. The drying device 215 uses high-pressure gas to blow away the water droplets, or replaces the water on the substrate with a solvent with low surface tension to volatilize it, thereby drying the substrate 300 . The transfer device 214 can transfer the substrate 300 between the polishing device 100 , the cleaning device 213 , and the drying device 215 . <The first embodiment: Surface reference polishing using the airbag method>

Hereinafter, a more specific configuration of the polishing apparatus 100 will be described. In the first embodiment, the above-mentioned pressing mechanism 208 uses the polishing apparatus 100 of the airbag type. 5 and 6 are perspective views showing the overall structure of the polishing apparatus. As described above, the polishing apparatus 100 includes the plurality of substrate holding mechanisms 200 . The substrate holding mechanism 200 is disposed at intervals along the long side of the rectangular substrate 300 and along the first direction extending horizontally. The structure of the plurality of substrate holding mechanisms 200 of the present embodiment includes: a rod-shaped base 200a extending in the vertical direction; and a support member 200b extending upward from the upper end of the base 200a. The support member 200b is movable in the up-down direction. A plurality of substrate holding mechanisms 200 are arranged at intervals along the first direction, and are also arranged in a matrix at intervals along the second direction along the short side of the substrate 300 . The second direction is a direction that intersects the first direction and extends horizontally, and in this embodiment, is a direction orthogonal to the first direction and the vertical direction (up-down direction). In the following description, the first direction is referred to as "X direction", the second direction is referred to as "Y direction", and the vertical direction is referred to as "Z direction".

When polishing the substrate 300 , as shown in FIG. 5 , the substrate 300 is conveyed by the arm 400 . The arm 400 includes: a plurality of rod-shaped members 401 extending in the X direction spaced apart from each other; a connecting member 402 for connecting one end of the plurality of rod-shaped members 401; the substrate 300 is mounted on the plurality of rod-shaped members 401 to transport. When the substrate 300 is loaded into the polishing apparatus 100, the supporting member 200b is lowered, and the substrate 300 mounted on the arm 400 is transported to the plurality of substrate holding mechanisms 200 along the X direction at a position higher than the upper end of the supporting member 200b. As shown in FIG. 6 , when the substrate 300 is conveyed to a predetermined position on the plurality of substrate holding mechanisms 200 , the substrate holding mechanism 200 receives the substrate 300 by raising the support member 200 b . Thereby, the substrate 300 can be installed in the plurality of substrate holding mechanisms 200 . The substrate holding mechanism 200 adjusts the position of the support member 200b in the Z direction in such a manner that the received substrate 300 and the mask 210 have the same height. As described above, the substrate holding mechanism 200 can hold the substrate 300 without moving during polishing by using the suction member 301 to suction the substrate 300 . After the substrate holding mechanism 200 receives the substrate 300, the arm 400 is retracted in the X direction.

In addition, the present embodiment shows an example in which the substrate holding mechanism 200 including the rod-shaped base 200a and the support member 200b is arranged in a matrix, but the structure of the substrate holding mechanism 200 is not limited to this. FIG. 7 is a diagram showing a modification of the substrate holding mechanism. As shown in FIG. 7 , the substrate holding mechanism 200 may include a plurality of support members 200 c arranged at intervals in the first direction (X direction). The support members 200c are plate-shaped members extending along the Y direction, and have notches 200d formed at their upper ends for avoiding interference with the rod-shaped members 401 of the arm 400 and the rail base 601 and rail members 602 described below. The support members 200c are respectively movable in the Z direction.

As described above, the polishing apparatus 100 includes a plurality of polishing heads 201 for polishing the substrate 300 . As shown in FIG. 5 , the plurality of polishing heads 201 are arranged along the Y direction. The polishing apparatus 100 includes a first driving mechanism 500 for moving the plurality of polishing heads 201 along the first direction (X direction). The first drive mechanism 500 includes: a pair of rail bases 501 extending along the X direction and sandwiching a plurality of grinding heads 201; and a pair of rails disposed on the rail base 501 and extending along the X direction Component 502 . The first driving mechanism 500 includes: a pair of support bases 503 that can move along the rail member 502 ; and a beam member 504 that extends in the Y direction across the pair of support bases 503 and is supported by the support bases 503 . The plurality of grinding heads 201 are suspended and held by the beam member 504 . FIG. 8 is a diagram showing a plurality of grinding heads 201 moving in the first direction (X direction). In FIG. 8 , when the side where the tool dressing member 211 is provided is regarded as the upstream side in the X direction, the first drive mechanism 500 drives the support table 503 along the The rail member 502 is moved to the downstream side in the X direction, and the plurality of polishing heads 201 can be moved in the X direction.

In addition, the polishing apparatus 100 includes a fourth driving mechanism 550 for moving the plurality of polishing heads 201 in the second direction (Y direction). FIG. 9 is a diagram schematically showing the fourth drive mechanism 550 . As shown in FIG. 9 , the configuration of the fourth driving mechanism 550 may include, for example, a rail member 551 disposed below the beam member 504 and extending along the Y direction; and a support table 552 movable along the rail member 551 . The plurality of grinding heads 201 are suspended and held on the support table 552 . The fourth driving mechanism 550 moves the support table 552 along the Y direction by conventional mechanisms such as a rack and pinion, an electric cylinder, an actuator, etc., and can move the plurality of grinding heads 201 in the Y direction.

Furthermore, as described above, the polishing apparatus 100 includes the mask 210 . The mask 210 is a frame-shaped plate-like member having the same thickness as the substrate 300 , and as shown in FIGS. 6 and 8 , is arranged to surround four sides of the substrate 300 . The mask 210 has the same height as the disposition position of the substrate 300 in the Z direction during polishing, and is fixed to a pair of rail bases 501 . By providing the mask 210, as described above, it is possible to suppress the extreme increase in the polishing rate caused by the concentration of the pressing force of the polishing head 201 on the peripheral portion of the substrate 300.

Fig. 10 is a diagram showing the structure of a mode display stage. As shown in FIG. 10 , the polishing apparatus 100 includes a stage 202 extending in the second direction (Y direction). In FIG. 10 , the illustration of the polishing heads 201 is omitted, and the stage 202 is disposed opposite to the plurality of polishing heads 201 with the substrate 300 sandwiched therebetween. The stage 202 includes a pressing mechanism 208 for pressing the substrate 300 against the plurality of polishing heads 201 .

FIG. 11 is a perspective view schematically showing the structure of the pressurizing mechanism 208 . FIG. 12 is a cross-sectional view schematically showing the configuration of the pressing mechanism 208 and the guide member 290 . As shown in FIGS. 10 to 12 , the pressing mechanism 208 includes: a base 222 extending along the Y direction; a plurality of bag-shaped members 224 disposed on the base 222 ; Fluid supply member 226 for supplying fluid. The plurality of bag members 224 are provided corresponding to the number of the plurality of grinding heads 201, and are arranged along the Y direction.

The bag-shaped member 224 is, for example, an air bag, and the fluid supply member 226 is configured to supply air in the air bag. By supplying the fluid from the fluid supply member 226 to the bag member 224 to expand the bag member 224 , the substrate 300 can be pressed against the plurality of polishing heads 201 . That is, the polishing apparatus 100 of the present embodiment uses the polishing head 201 as the polishing reference, and the substrate 300 is pressed against the polishing head 201 by the bag-shaped member 224 from the opposite side (back surface) of the polished surface of the substrate 300, so that even A certain thickness of surface reference grinding can be removed anywhere on the entire substrate.

The surface of the bag-shaped member 224 in contact with the substrate 300 should have low frictional resistance and high wear resistance. When the bag-like member 224 cannot be made of such a material, a protective plate 228 with such properties (eg, a PTFE (polytetrafluoroethylene) plate) can also be attached to the top of the bag-like member 224 and replaced when it ages Paste to use. In addition, it is also possible to apply, for example, PTFE coating on the bag-shaped member 224 . The bag-shaped member 224 of the present embodiment can be produced by forming a material such as silicone into a ring shape (doughnut shape), for example. By forming the bag-shaped member 224 into a ring shape, a hole 224a is formed in the center of the bag-shaped member 224 . The pressurizing mechanism 208 includes a fluid supplying member 227 for supplying a fluid (eg, pure water or a chemical solution containing a surfactant or the like) between the bag-shaped member 224 and the substrate 300 through the hole 224a. By supplying the fluid from the fluid supply member 227, the frictional resistance between the bag-shaped member 224 and the substrate 300 can be reduced, and heat generation due to sliding of both can be suppressed.

As shown in FIG. 12 , the polishing apparatus 100 includes guide members 290 arranged at both ends of the stage 202 in the first direction (X direction). The guide member 290 has: a first end portion 290a arranged at the same height as the upper surface of the stage 202; a second end portion 290b arranged at a position lower than the upper surface of the stage 202; The slope 290c between the two ends 290b. The guide member 290 is a member for preventing the substrate 300 and the stage 202 from being damaged when the polishing head 201 and the stage 202 are moved from the state where the mask 210 is sandwiched to the state where the substrate 300 is sandwiched.

13 is a diagram schematically showing the role of the guide member 290 when moving from the state where the polishing head 201 and the stage 202 sandwich the mask 210 to the state where the substrate 300 is sandwiched. In FIG. 13, as shown by the dotted line, the end portion 300a of the substrate 300 sags due to its own weight. At this time, when the stage 202 without the guide member 290 moves from the lower part of the cover 210 to the lower part of the substrate 300 , the stage 202 interferes with the end 300 a hanging from the substrate 300 , which may cause damage to the substrate 300 . In addition, when the carrier 202 interferes with the end portion 300a that hangs down from the substrate 300, the carrier 202 may also be damaged. For example, when the stage 202 includes the bag-shaped member 224 , the bag-shaped member 224 may be damaged when the hanging portion 300 a of the substrate 300 is pressed against the side surface of the bag-shaped member 224 . In addition, when the stage 202 moves from the lower part of the cover 210 to the lower part of the substrate 300, the guide member 290 lifts the end 300a of the substrate 300 hanging down by the second end part 290b and the inclination 290c, so that the polishing head 201 and the between the stages 202 . Thereby, damage to the substrate 300 can be prevented. FIG. 14 is a diagram showing a modification of the guide member 290 . As shown in FIG. 14 , the guide member 290 ′ may include a plurality of pulleys 291 a , 291 c , and 291 b whose height decreases as the guide member 290 ′ moves away from the stage 202 . A virtual slope 290c' connecting the upper surfaces of the pulleys 291a, 291c, and 291b is formed between the first end portion 290a' of the upper surface of the pulley 291a and the second end portion 290b' of the upper surface of the pulley 291b. Thereby, when the stage 202 moves from the lower part of the mask 210 to the lower part of the substrate 300, the guide member 290' lifts the sagging end part 300a of the substrate 300 by the second end part 290b' and the inclination 290c', so that grinding can be introduced. between the head 201 and the stage 202 .

As shown in FIG. 10 , the polishing apparatus 100 includes a second drive mechanism 600 for moving the stage 202 in the first direction (X direction). The second driving mechanism 600 includes: three rail bases 601 extending along the X direction and arranged at intervals from each other; and rail members arranged on each of the three rail bases 601 and extending along the X direction 602. The second drive mechanism 600 includes a beam member 604 that extends in the Y direction across three rail bases 601 , is supported by the rail base 601 , and is movable along the rail member 602 . The stage 202 is held on the beam member 604 . FIG. 15 is a diagram showing the movement of the stage 202 in the first direction (X direction). As shown in FIG. 15 , the second drive mechanism 600 moves the beam member 604 to the downstream side in the X direction along the rail member 602 by a conventional mechanism such as a rack and pinion, an electric cylinder, an actuator, etc., so that the stage 202 can be moved in the X direction. Move in the X direction. The above-mentioned first driving mechanism 500 and second driving mechanism 600 can move the plurality of grinding heads 201 and the stage 202 in the X direction synchronously. In addition, in this embodiment, the first driving mechanism 500 and the second driving mechanism 600 are described as different members, but these may be members that move a plurality of polishing heads 201 and the stage 202 in synchronization in the X direction as a whole. . At this time, the polishing apparatus 100 may also include a coupling mechanism capable of mechanically coupling or separating a plurality of polishing heads 201 and the stage 202 . When the integrated driving mechanism performs the polishing of the substrate 300, a plurality of polishing heads 201 and the stage 202 are connected by a connecting mechanism, and conventional gear racks, electric cylinders, actuators, etc. in the first driving mechanism 500 are used. In the mechanism, by moving the support table 503 in the X direction, the plurality of polishing heads 201 and the stage 202 can be moved in the X direction in synchronization. In addition, when the grinding tool 302 is dressed by the integrated driving mechanism, the two are separated and conventional mechanisms such as racks and pinions, electric cylinders, and actuators in the first driving mechanism 500 are used to keep the support table 503 in the By moving in the X direction, only the plurality of grinding heads 201 can be moved to the tool dressing member 211 .

In addition, the polishing apparatus 100 includes a fifth drive mechanism 650 that moves the stage 202 in the second direction (Y direction). As shown in FIG. 15 , the fifth driving mechanism 650 may include: a rail member 651 disposed on the beam member 604 and extending along the Y direction; and a support base 652 movable along the rail member 651 . The stage 202 is held on the support table 652 . The fifth drive mechanism 650 moves the support table 652 in the Y direction by conventional mechanisms such as a rack and pinion, an electric cylinder, and an actuator, and can move the stage 202 in the Y direction. The above-mentioned fourth driving mechanism 550 and fifth driving mechanism 650 can move the plurality of grinding heads 201 and the stage 202 in the Y direction synchronously. In addition, in this embodiment, the fourth driving mechanism 550 and the fifth driving mechanism 650 are described as separate components, but these may be integrated by moving the plurality of polishing heads 201 and the stage 202 in synchronization with the Y direction. member. At this time, when the integrated driving mechanism is grinding the substrate 300, a plurality of grinding heads 201 and the stage 202 can be connected by the above-mentioned connecting mechanism, for example, the rack and pinion in the fourth driving mechanism 550, the electric cylinder, the By moving the support table 552 in the Y direction using a conventional mechanism such as an actuator, the plurality of polishing heads 201 can be moved in the Y direction in synchronization with the stage 202 . Conventional mechanisms such as racks and pinions, electric cylinders, and actuators in the fifth driving mechanism 650 can also be used to move the support table 652 in the Y direction to synchronize the plurality of grinding heads 201 and the stage 202 in the Y direction. direction move.

As shown in FIGS. 10 and 15 , the polishing apparatus 100 includes a third drive mechanism 280 for moving the plurality of substrate holding mechanisms 200 in the up-down direction (Z direction) according to the movement of the stage 202 in the first direction (X direction). . The plurality of substrate holding mechanisms 200 are members for holding the substrate 300 but interfere with the stage 202 in the region where the stage 202 exists. Therefore, the third driving mechanism 280 can retract the support member 200b of the substrate holding mechanism 200 in the region of interference with the stage 202 to the downward direction.

Specifically, in the state shown in FIG. 10 , the supporting members 200 b of the plurality of substrate holding mechanisms 200 arranged in the Y direction in the area A surrounded by the dotted line are retreated to the downward direction. In addition, the state shown in FIG. 15 in which the stage 202 is moved to the downstream side in the X direction is the position of the plurality of substrate holding mechanisms 200 arranged in the Y direction in the area B surrounded by the dotted line on the downstream side in the X direction than the area A. The support members 200 b are retracted downward, and the support members 200 b of the plurality of substrate holding mechanisms 200 in the area A extend upward to support the substrate 300 . In addition, the third drive mechanism 280 can move the support member 200b in the Z direction by conventional mechanisms such as an electric cylinder and an actuator.

Next, the polishing process flow of the polishing apparatus 100 will be described. As shown in FIG. 6 , in the polishing apparatus 100 , a plurality of polishing heads 201 are arranged on a mask 210 on the upstream side in the X direction, and in a state where the stage 202 is arranged under the mask 210 , the pressing mechanism 208 is used to apply the polishing head 201 . The plurality of grinding heads 201 are pressed and rotated around the rotating shaft 203 . Next, as shown in FIG. 8 , the polishing apparatus 100 moves the plurality of polishing heads 201 and the stage 202 to the downstream side in the X direction, and further performs the surface reference polishing of the substrate 300 . 16 to 18 are flowcharts for explaining the polishing process of the polishing apparatus 100 . As shown in FIG. 16 , after the plurality of polishing heads 201 and the stage 202 are moved to sandwich the cover 210 on the downstream side, the polishing apparatus 100 stops the pressing of the pressing mechanism 208 , and as shown in FIG. 17 , the plurality of polishing The head 201 and the stage 202 move in the Y direction. Continuing, the polishing apparatus 100 restarts the pressing of the pressing mechanism 208 and moves the plurality of polishing heads 201 and the stage 202 to the upstream side in the X direction as shown in FIG. 18 . The polishing apparatus 100 stops the pressurization of the pressing mechanism 208 after the plurality of polishing heads 201 and the stage 202 are moved to sandwich the upstream side of the mask 210, and staggers the positions of the plurality of polishing heads 201 and the stage 202 in the Y direction , and repeat the scanning in the X direction as described above.

FIG. 19 is a diagram showing an example of scanning of a plurality of grinding heads 201 and a stage 202 . As shown in FIG. 19( a ), the polishing apparatus 100 can change the position in the Y direction between two strokes, and reciprocate the plurality of polishing heads 201 and the stage 202 in the X direction. In addition, as shown in FIG. 19( b ), the polishing apparatus 100 may change the position in the Y direction during four strokes, and move the plurality of polishing heads 201 and the stage 202 back and forth in the X direction. In addition, as shown in FIG. 19( c ), the polishing apparatus 100 may change the position in the Y direction during eight strokes, and move the plurality of polishing heads 201 and the stage 202 back and forth in the X direction. As shown in FIG. 19 , in the polishing apparatus 100 , by increasing the number of round trips, the distance (step distance) for changing the position of the polishing head 201 in the Y direction becomes smaller, so that the substrate 300 can be uniformly polished. 19 illustrates the case where the number of strokes is 2, 4, and 8, but the number of strokes is not limited. When the number of strokes is an even number, the movement of the polishing head 201 and the stage 202 in the X direction can be used for polishing, but even an odd number does not matter. When the number of strokes is an odd number, it is necessary to move the polishing head 201 and the stage 202 in the X direction without the polishing head 201 contacting the substrate 300 before the polishing is started or after the polishing is completed.

At this time, when the moving speed of the polishing head 201 in the X direction is low, the polishing amount of the substrate 300 is increased, and when the moving speed is high, the polishing amount of the substrate 300 is small. That is, the moving speed of the polishing head 201 in the X direction is inversely proportional to the polishing amount of the substrate 300 . Therefore, during the polishing of the substrate 300, when the moving speed of the polishing head 201 in the X direction varies, the polishing amount of the substrate 300 varies depending on the position, resulting in uneven polishing, which is not suitable. In addition, the polishing apparatus 100 moves the plurality of polishing heads 201 and the stage 202 in the X direction at a constant speed in the constant velocity region α within the range of the longitudinal direction of the substrate 300 . In addition, the polishing apparatus 100 decelerates and stops the movement of the plurality of polishing heads 201 and the stage 202 in the X direction in the acceleration/deceleration region β outside the range of the longitudinal direction of the substrate 300, and after shifting the positions in the Y direction, it can be Movement in the X direction begins to accelerate. Therefore, the polishing apparatus 100 can uniformly polish the substrate 300 by moving the plurality of polishing heads 201 and the stage 202 at a constant speed within the range of the longitudinal direction of the substrate 300 , in other words, during polishing of the substrate 300 .

20 and 21 are flowcharts for explaining the grinding process of the grinding apparatus 100 after the grinding process. When the polishing process of the substrate 300 is completed, or when the polishing tool 302 cannot be used for polishing the substrate 300, as shown in FIG. 20, the polishing apparatus 100 moves the plurality of polishing heads 201 to the most upstream in the X direction, and uses the tool The dressing member 211 performs dressing processing (Dressing) of the grinding tool 302 . During the dressing process of the polishing tool 302 , the polishing apparatus 100 performs the unloading process of the substrate 300 . That is, the polishing apparatus 100 inserts the arm 400 under the substrate 300, and lowers the supporting member 200b or 200c of the substrate holding mechanism 200 to make the substrate 300 ride on the arm 400, as shown in FIG. 21, by retracting the arm 400. The substrate 300 is carried out by opening to the downstream side in the X direction.

The polishing apparatus 100 of the first embodiment is suitable for surface reference polishing. That is, as in the present embodiment, when using the polishing head 201 with a small diameter to polish a large substrate 300 in a face-up manner, conventionally, backside reference polishing was performed. In order to perform surface reference polishing, a pressing mechanism such as an air bag is installed on the back surface of the substrate 300 . However, when the entire substrate 300 is pressed, the pressure is applied to the area where the polishing head does not exist, and the substrate 300 may be damaged. In addition, the polishing apparatus 100 of the first embodiment is configured such that the stage 202 of the size corresponding to the size of the plurality of polishing heads 201 and the plurality of polishing heads 201 move synchronously in the X direction, since only the polishing heads 201 exist The area can push the substrate 300, so that even a large substrate 300 can be properly polished for surface reference. <Second embodiment: Surface reference grinding using static pressure>

Next, the structure of the grinding|polishing apparatus 100 of 2nd Embodiment is demonstrated. In the second embodiment, the above-mentioned pressing mechanism 208 is a polishing apparatus 100 using a static pressure method. The second embodiment is the same as the first embodiment except that the configuration of the pressing mechanism 208 is different. The description of the structure overlapping with the first embodiment is omitted.

FIG. 22 is a cross-sectional view schematically showing the configuration of the pressing mechanism 208 and the guide member 290 . As shown in FIG. 22 , the pressing mechanism 208 includes: a base 222 extending in the Y direction as in the first embodiment; and a pressing member 225 arranged on the base 222 . The pressing member 225 extends along the Y direction and is provided corresponding to the area where the plurality of grinding heads 201 exist. The pressing member 225 has a plurality of holes 225b formed on the surface 225a facing the substrate 300 . The pressurizing mechanism 208 includes a fluid supply member 226 for supplying fluid to the flow paths communicating with the plurality of holes 225b of the pressurizing member 225 .

The fluid supply member 226 is configured to supply a fluid such as air to the pressurizing member 225, for example. The substrate 300 can be pressed against the plurality of polishing heads 201 by supplying the fluid from the fluid supply member 226 to the pressurizing member 225 and ejecting the fluid from the plurality of holes 225b. That is, the polishing apparatus 100 of the present embodiment uses the polishing head 201 as a polishing reference, and presses the substrate 300 to the polishing head 201 by the pressing member 225 from the opposite side (back surface) of the surface to be polished of the substrate 300, and the entire substrate is carried out. A certain thickness of surface reference grinding is removed everywhere. In addition, the pressurizing member 225 is not limited to the structure shown in FIG. 22, It may be comprised including the porous body in which many pores were formed. At this time, the fluid supplied from the fluid supply member 226 to the porous body is ejected from the surface of the porous body facing the substrate 300 , and the substrate 300 is pressed against the plurality of polishing heads 201 . By providing a shielding member for shielding the fluid on the side surface of the porous body, the fluid can be ejected only from the surface of the porous body opposite to the substrate 300 .

When the polishing apparatus 100 of the second embodiment is used, it is suitable for surface reference polishing as in the first embodiment. <Third Embodiment: Backside Standard Grinding Using a Flatbed>

Next, the structure of the grinding|polishing apparatus 100 of 3rd Embodiment is demonstrated. The polishing apparatus 100 of the third embodiment uses a stage instead of the pressing mechanism 208 described above, and the vertical movement mechanism 207 presses the substrate 300 . The third embodiment is the same as the first embodiment except that a stage is used instead of the pressing mechanism 208, and the vertical movement mechanism 207 presses the substrate 300. FIG. The description of the structure overlapping with the first embodiment is omitted.

FIG. 23 is a perspective view schematically showing the configuration of the platform 229 and the guide member 290 . As shown in FIG. 23 , the stage 202 includes: a base 222 extending in the Y direction as in the first embodiment; and a stage 229 provided on the base 222 . The stage 229 has a flat surface 229a for supporting the substrate 300 pressed by the plurality of grinding heads 201 . The flat surface 229a of the platform 229 in contact with the substrate 300 should have low frictional resistance and high wear resistance. When the platform 229 cannot be made of such a material, a protective plate (eg, PTFE plate) with these characteristics can also be attached to the upper surface of the platform 229, and the plate 229 can be replaced after aging. In addition, a PTFE coating, for example, may also be performed on the platform 229 .

Fig. 24 is a perspective view schematically showing the structure of the platform. As shown in FIG. 24, a plurality of holes 229b are formed along the Y direction on the flat surface 229a of the platform 229 of the present embodiment. The polishing apparatus 100 includes a fluid supply member 227 for supplying a fluid (eg, pure water) between the stage 229 and the substrate 300 through the hole 229b. By supplying the fluid from the fluid supply member 227, the frictional resistance between the stage 229 and the substrate 300 can be reduced, and heat generation due to sliding of the two can be suppressed. In addition, this embodiment shows an example in which a plurality of holes 229b are formed along the Y direction in the center of the plane 229a of the platform 229 in the X direction, but it is not limited to this. As shown in FIG. 25, a plurality of holes 229c and 229d may be formed along the Y direction at both ends of the flat surface 229a of the platform 229 in the X direction. Thereby, when the stage 202 moves in the X direction, since the fluid can always be supplied from the front holes (the plurality of holes 229c or the plurality of holes 229d) in the advancing direction, the entire table 229 can be lubricated. For example, the polishing apparatus 100 may include a switching mechanism (eg, a switching valve) that can switch the manner in which the fluid is supplied from any one of the plurality of holes 229c and the plurality of holes 229d. The polishing apparatus 100 uses the switching mechanism to supply the fluid only from a plurality of holes in front of the stage 202 in the advancing direction, so that the amount of fluid used can be suppressed and the entire table 229 can be lubricated.

When the polishing apparatus 100 of the third embodiment is used, it is suitable to use an inexpensive and small stage 229 for back reference polishing. That is, when the polishing head 201 with a small diameter is used to polish a large substrate 300 face-up as in the present embodiment, a large stage supporting the entire substrate 300 was usually used for backside reference polishing in the past. A stage having a flat surface with high surface accuracy is required to accurately perform backside reference grinding, however, since a large stage having a flat surface with high surface accuracy is expensive, the cost of the polishing apparatus increases. On the other hand, the polishing apparatus 100 of the third embodiment is configured in such a manner that the stage 202 and the plurality of polishing heads 201 move in the first direction synchronously. Therefore, since the stage only needs to be a size corresponding to the size of the plurality of polishing heads 201 , even when polishing a large substrate 300 , an inexpensive and small stage 229 can be used to perform backside reference polishing.

As described above, when the first to third embodiments are employed, in the face-up type polishing apparatus, the surface reference polishing can be appropriately performed, and the back reference polishing can be performed. That is, in the case of surface reference grinding, only the stage 202 described in the first embodiment or the second embodiment needs to be used, and in the case of back surface reference polishing, it is only necessary to use the stage 202 described in the third embodiment. The stage 202 is sufficient. Therefore, even if it is a single polishing apparatus 100, the surface reference polishing or the back surface reference polishing can be performed by replacing the stage 202. ＜Polishing method＞

Next, a polishing method using the polishing apparatus 100 of any of the above-described embodiments will be described. FIG. 26 is a flowchart showing the polishing method of the present embodiment. As shown in FIG. 26 , in the polishing method of the present embodiment, firstly, the carrying process of the substrate 300 is performed using the arm 400 (the carrying-in step 102 ). As described above, in the loading step 102 , the substrate 300 mounted on the arm 400 is transferred to the plurality of substrate holding mechanisms 200 along the X direction at a position higher than the upper end of the supporting member 200 b while the supporting member 200 b is lowered.

After the substrate 300 is conveyed to a predetermined position on the plurality of substrate holding mechanisms 200 , the polishing method performs the setting process of the substrate 300 using the plurality of substrate holding mechanisms 200 (setting step 104 ). As described above, in the setting step 104 , the substrate holding mechanism 200 receives the substrate 300 by raising the support member 200 b , thereby setting the substrate 300 on the plurality of substrate holding mechanisms 200 . After the substrate holding mechanism 200 receives the substrate 300, the arm 400 retreats along the X direction.

Continuing, the grinding method uses the first driving mechanism 500 and the second driving mechanism 600 to move the plurality of grinding heads 201 and the stage 202 to the start grinding position of the end of the mask 210 on the upstream side in the X direction (moving step 105 ). Continuing, in the polishing method, the plurality of polishing heads 201 are rotated using the rotation mechanism 204, and a chemical solution (polishing liquid, water, or pure water) is supplied from the chemical liquid supply holes 205 of the polishing heads 201 to start polishing (polishing step 106). Continuing, the polishing method uses the plurality of polishing heads 201 and the stage 202 to sandwich the mask 210 and starts to pressurize (pressurizing step 108 ). In the pressing step 108, as in the first and second embodiments, when the stage 202 includes the pressing mechanism 208, the mask 210 is pressed from the stage 202 side to the polishing head 201 side. In addition, in the pressing step 108, as in the third embodiment, when the stage 202 includes the stage 229, the mask 210 is pressed from the polishing head 201 side to the stage 202 side. The polishing step 106 and the pressing step 108 are described below. Since the scanning of the plurality of polishing heads 201 and the stage 202 in the X direction is also continued, the plurality of polishing heads 201 and the stage 202 sandwich the substrate 300 while the substrate 300 is sandwiched. pressurized.

Continuing, the polishing method performs the polishing step 106 and the pressing step 108 , and uses the first driving mechanism 500 and the second driving mechanism 600 to move the plurality of polishing heads 201 and the stage 202 in the first direction (X direction) (scanning step 110 ). ).

Continuing, the polishing method uses the third driving mechanism 280 to move the plurality of substrate holding mechanisms 200 in the up and down direction (Z direction) according to the movement of the stage 202 in the X direction in the scanning step 110 (up and down driving step 112 ). The up-and-down driving step 112 lowers the substrate holding mechanism 200 approaching the stage 202 to prevent interference with the stage 202 , and is performed by raising the substrate holding mechanism 200 , which descends after passing the stage 202 , to support the substrate 300 again.

Continuing, the polishing method determines whether the plurality of polishing heads 201 and the stage 202 reach the mask 210 on the opposite side through the scanning step 110 (determination step 113 ). When the polishing method determines that the plurality of polishing heads 201 and the stage 202 have not reached the mask 210 on the opposite side (determination step 113 , No (No)), the process returns to the scanning step 110 and the processing is repeated. In addition, when the polishing method determines that the plurality of polishing heads 201 and the stage 202 have reached the mask 210 on the opposite side (determination step 113, Yes), the pressurization in the pressurization step 108 is released (step 114), and it is determined that Whether the polishing process of the substrate 300 has ended (determination step 116 ).

Polishing method When it is determined that the polishing process of the substrate 300 has not been completed (determination step 116, NO), it is determined whether trimming and polishing are required according to the polishing time or the number of strokes in the X direction after the previous trimming of the polishing tool 302 currently in use. Tool 302 (decision step 117). When it is determined by the polishing method that the polishing tool 302 needs dressing (determination step 117 , Yes), the rotation of the polishing head 201 is stopped (step 118 ). Continuing, the grinding method uses the first drive mechanism 500 to move the plurality of grinding heads 201 to the position of the tool dressing member 211 , and uses the tool dressing member 211 to dress the grinding tool 302 (dressing step 119 ). After finishing the trimming step 119, the polishing method returns to the moving step 105, and the processing is repeated. In addition, when the polishing method determines that the polishing tool 302 does not need dressing (determination step 117 , NO), the fourth drive mechanism 550 is used to move the polishing head 201 in the second direction (Y direction) (movement step 120 ). In the moving step 120 , as in the first and second embodiments, when the stage 202 includes the pressing mechanism 208 , the fifth driving mechanism 650 is used to move the stage 202 in the Y direction in synchronization with the plurality of polishing heads 201 . In addition, in the moving step 120, as in the third embodiment, the stage 202 includes a platform 229, but when the length of the platform 229 in the Y direction is the same as the length of the plurality of grinding heads 201 in the Y direction, the fifth driving mechanism 650 is used, In synchronization with the plurality of polishing heads 201, the stage 202 is also moved in the Y direction. In addition, the moving step 120 is the same as the third embodiment, the stage 202 includes a platform 229, and the length of the platform 229 in the Y direction exceeds the length of the combined plurality of grinding heads 201 in the Y direction and the length of the moving part in the Y direction, It is not necessary to move the stage 202 in the Y direction. The grinding method returns to the pressing step 108 after the moving step 120 and repeats the processing.

When it is determined by the polishing method that the polishing process of the substrate 300 is completed (determination step 116 , Yes), the rotation of the polishing head 201 is stopped (step 122 ). Continuing, the grinding method uses the first drive mechanism 500 to move the plurality of grinding heads 201 to the positions of the tool dressing members 211, and use the tool dressing members 211 to dress the grinding tools 302 (dressing step 124). Next, the polishing method uses the arm 400 to carry out the unloading process of the substrate 300 (the unloading step 126 ). The unloading step 126 is performed by inserting the arm 400 under the substrate 300 , lowering the support member 200 b of the substrate holding mechanism 200 , so that the substrate 300 rides on the arm 400 , and the arm 400 is withdrawn to the downstream side in the X direction. .

In the above, several embodiments of the present invention have been described, but the embodiments of the present invention described above are intended to facilitate the understanding of the present invention and are not intended to limit the present invention. The present invention can be changed and improved without departing from the scope of the gist, and it is needless to say that the equivalents thereof are included in the present invention. Further, the respective constituent elements described in the scope of the claims and the specification can be arbitrarily combined or omitted as long as at least a part of the above-mentioned problems can be solved or at least a part of the effects can be achieved.

An embodiment of the present application discloses a polishing apparatus, which includes: a plurality of substrate holding mechanisms, which are arranged along a first direction of the substrate; and a plurality of polishing heads, which are arranged along a second direction crossing the first direction. The stage is opposite to the plurality of grinding heads and extends in the second direction; and a drive mechanism is used to move the plurality of grinding heads and the stage in the first direction.

In addition, an embodiment of the present application discloses a grinding device, wherein the driving mechanism includes: a first driving mechanism for moving the plurality of grinding heads in the first direction; and a second driving mechanism for For moving the stage in the first direction; the first drive mechanism and the second drive mechanism are configured to move the plurality of grinding heads and the stage in the first direction in synchronization with each other.

In addition, an embodiment of the present application discloses a polishing apparatus further comprising a third driving mechanism for moving the plurality of substrate holding mechanisms in the up-down direction according to the movement of the stage in the first direction.

In addition, an embodiment of the present application discloses a polishing apparatus further comprising a mask, which surrounds the substrate and has the same thickness as the substrate.

In addition, an embodiment of the present application discloses a polishing apparatus further comprising a fourth driving mechanism for moving the plurality of polishing heads in the second direction.

In addition, an embodiment of the present application discloses a polishing apparatus further comprising a fifth driving mechanism for moving the stage in the second direction.

In addition, an embodiment of the present application discloses a polishing apparatus, further comprising guide members disposed at both ends of the stage in the first direction, and having: first end portions disposed in the same direction as the first end. The upper surface of the stage has the same height; the second end portion is arranged at a lower position than the upper surface of the stage; and the inclination is provided between the first end portion and the second end portion.

In addition, an embodiment of the present application discloses a polishing apparatus, wherein the stage includes a pressing mechanism for pressing the substrate to the plurality of polishing heads.

In addition, an embodiment of the present application discloses a polishing apparatus, wherein the pressurizing mechanism includes: a base; a bag-shaped member disposed on the base; and a fluid supply member for supplying fluid to the above-mentioned bag-like member.

In addition, an embodiment of the present application discloses a polishing apparatus further comprising a fluid supply member for supplying fluid to the contact surface of the bag-shaped member and the substrate.

In addition, an embodiment of the present application discloses a polishing apparatus, wherein the pressing mechanism includes: a base; a pressing member is disposed on the base, and a plurality of holes are formed on the surface opposite to the substrate; and a fluid supply member for supplying fluid to a flow path communicating with the plurality of holes of the pressurizing member.

In addition, an embodiment of the present application discloses a polishing apparatus, wherein the stage includes a platform having a flat surface supporting a substrate pressed by the plurality of polishing heads.

In addition, an embodiment of the present application discloses a grinding apparatus, further comprising a fluid supply member for supplying fluid to the aforementioned plane of the aforementioned platform.

In addition, an embodiment of the present application discloses a processing system comprising: any one of the above-mentioned polishing apparatuses; a cleaning apparatus for cleaning a substrate polished by the foregoing polishing apparatus; and a drying apparatus for cleaning The substrate cleaned by the cleaning device is dried; and a transfer device is used to transfer the substrate between the polishing device, the cleaning device, and the drying device.

In addition, an embodiment of the present application discloses a polishing method, which includes: a setting step of setting a substrate on a plurality of substrate holding mechanisms arranged along a first direction; a pressing step by A plurality of polishing heads arranged in a second direction crossing the first direction, and a stage extending in the second direction opposite to the plurality of polishing heads sandwich the substrate to press; the polishing step is to make the A plurality of polishing heads are rotated; and a scanning step is performed, wherein the pressing step and the polishing step are performed, and the plurality of polishing heads and the stage are moved in the first direction.

In addition, an embodiment of the present application discloses a polishing method, further comprising an up-down driving step, which is based on the movement of the stage in the first direction in the scanning step to move the plurality of substrate holding mechanisms in the up-down direction .

In addition, an embodiment of the present application discloses a polishing method, wherein the pressing step and the polishing step are performed by sandwiching a plurality of polishing heads and the stage around the substrate and having the same thickness as the substrate. Start with a mask.

In addition, an embodiment of the present application discloses a polishing method, which further includes a moving step of releasing the pressing in the pressing step after the plurality of polishing heads and the stage reach the mask through the scanning step. , and make the plurality of grinding heads move in the second direction.

100: Grinding device 200: Substrate holding mechanism 200a: Pedestal 200b: Support member 200c: Support member 201: Grinding head 202: Stage 203: Rotary axis 204: Rotary Mechanism 205: liquid medicine supply hole 206: liquid medicine supply device 207: Up and down moving mechanism 208: Pressurizing mechanism 209: Control Department 210:Mask 211: Tool trimming components 212: Sensor 213: Cleaning device 214: Conveyor 215: Drying device 222: Abutment 224: Bag-like member 225: Compression member 225a: Opposite side 225b: hole 226: Fluid supply member 227: Fluid Supply Components 228: Protection plate 229: Platform 229a: Plane 229b, 229c: holes 280: The third drive mechanism 290, 290': Guide member 290a, 290a': first end 290b, 290b': second end 290c, 290c': inclined 291a, 291c, 291b: Pulleys 300: Substrate 300a: End 301: Adsorption component 302: Grinding Tools 303: Protection plate 400: Arm 401: Rod member 402: Link Component 500: First drive mechanism 501: Orbital base 502: Track Components 503: Support table 504: Beam member 550: Fourth drive mechanism 551: Track Components 552: Support Table 600: Second drive mechanism 601: Orbital base 602: Track Components 604: Beam member 650: Fifth drive mechanism 651: Track Components 652: Support table 1000: Processing System

FIG. 1 is a schematic diagram showing a configuration of a polishing apparatus according to an embodiment of the present invention. FIG. 2 is a schematic diagram showing the state of the polishing head when polishing the outer periphery of the substrate. FIG. 3 is a schematic diagram showing the state of the polishing head when polishing the outer periphery of the substrate. FIG. 4 is a schematic diagram showing the configuration of a processing system including a polishing apparatus. FIG. 5 is a perspective view showing the overall configuration of the polishing apparatus. FIG. 6 is a perspective view showing the overall configuration of the polishing apparatus. FIG. 7 is a diagram showing a modification of the substrate holding mechanism. FIG. 8 is a diagram showing a plurality of grinding heads moving in a first direction (X direction). FIG. 9 is a diagram schematically showing the fourth drive mechanism. Fig. 10 is a diagram showing the structure of a mode display stage. FIG. 11 is a perspective view schematically showing the structure of the pressurizing mechanism. FIG. 12 is a cross-sectional view schematically showing the configuration of the pressing mechanism and the guide member. FIG. 13 is a diagram schematically showing the role of the guide member when the polishing head and the stage are moved from the state where the mask is sandwiched to the state where the substrate is sandwiched. FIG. 14 is a diagram showing a modified example of the guide member. FIG. 15 is a diagram showing the movement of the stage in the first direction (X direction). FIG. 16 is a flowchart for explaining the polishing process of the polishing apparatus. FIG. 17 is a flowchart for explaining the polishing process of the polishing apparatus. FIG. 18 is a flowchart for explaining the polishing process of the polishing apparatus. Figure 19 is a diagram showing an example scan of a plurality of grinding heads and stages. FIG. 20 is a flowchart for explaining the polishing process of the polishing apparatus. FIG. 21 is a flowchart for explaining the polishing process of the polishing apparatus. FIG. 22 is a cross-sectional view schematically showing the configuration of the pressing mechanism and the guide member. FIG. 23 is a perspective view schematically showing the structure of the platform and the guide member. Fig. 24 is a perspective view schematically showing the structure of the platform. FIG. 25 is a perspective view showing the configuration of a modification of the schematic display platform. FIG. 26 is a flowchart showing the polishing method of the present embodiment.

100: Grinding device

200: Substrate holding mechanism

200a: Pedestal

200b: Support member

201: Grinding head

202: Stage

210:Mask

211: Tool trimming components

300: Substrate

302: Grinding Tools

400: Arm

401: Rod member

402: Link Component

500: First drive mechanism

501: Orbital base

502: Track Components

503: Support table

504: Beam member

550: Fourth drive mechanism

600: Second drive mechanism

601: Orbital base

602: Track Components

604: Beam member

Claims (18)

A grinding device comprising: a plurality of substrate holding mechanisms, which are arranged along the first direction of the substrate; a plurality of grinding heads, which are arranged along a second direction intersecting with the first direction; a stage, which is opposite to the plurality of grinding heads and extends in the second direction; and A drive mechanism for moving the plurality of grinding heads and the stage in the first direction. The grinding device of claim 1, wherein the driving mechanism comprises: a first driving mechanism for moving the plurality of grinding heads in the first direction; and a second driving mechanism for moving the stage Move in the first direction; the first driving mechanism and the second driving mechanism are configured in such a way that the plurality of grinding heads and the stage move in the first direction in synchronization with each other. The polishing apparatus of claim 1, further comprising a third driving mechanism for moving the plurality of substrate holding mechanisms in the up-down direction according to the movement of the stage in the first direction. The polishing apparatus of claim 1, further comprising a mask that surrounds the substrate and has the same thickness as the substrate. The grinding device of claim 1, further comprising a fourth driving mechanism for moving the plurality of grinding heads in the second direction. The polishing apparatus of claim 1, further comprising a fifth driving mechanism for moving the stage in the second direction. The polishing apparatus of claim 1, further comprising guide members disposed at both ends of the stage in the first direction, and having first ends disposed on the same level as the upper surface of the stage the height; the second end portion, which is arranged at a position lower than the upper surface of the stage; and the inclination, which is arranged between the first end portion and the second end portion. The polishing apparatus of claim 1, wherein the stage includes a pressing mechanism for pressing the substrate against the plurality of polishing heads. The polishing apparatus according to claim 8, wherein the pressurizing mechanism comprises: a base; a bag-shaped member disposed on the base; and a fluid supply member for supplying fluid to the bag-shaped member. The polishing apparatus according to claim 9, further comprising a fluid supply member for supplying fluid to the contact surface of the bag-shaped member and the substrate. The polishing apparatus according to claim 8, wherein the pressing mechanism comprises: a base; a pressing member disposed on the base and having a plurality of holes formed on a surface opposite to the substrate; and a fluid supply member, It is for supplying fluid to the flow path communicating with the plurality of holes of the pressurizing member. The polishing apparatus of claim 1, wherein the stage includes a platform having a flat surface supporting the substrate pressed by the plurality of polishing heads. The grinding apparatus of claim 12, further comprising a fluid supply member for supplying fluid to the aforementioned flat surface of the aforementioned platform. A processing system comprising: The grinding device of claim 1; a cleaning device for cleaning the substrate polished by the aforementioned polishing device; a drying device for drying the substrate cleaned by the cleaning device; and A transfer device for transferring the substrate between the polishing device, the cleaning device, and the drying device. A grinding method comprising: a setting step of setting the substrate on a plurality of substrate holding mechanisms arranged along the first direction; The step of pressing, in which the substrate is sandwiched by a plurality of polishing heads arranged along a second direction intersecting with the first direction, and a stage opposite to the plurality of polishing heads and extending in the second direction pressurize; a grinding step, which is to rotate the plurality of grinding heads; and In the scanning step, the pressing step and the polishing step are performed, and the plurality of polishing heads and the stage are moved in the first direction. The polishing method of claim 15, further comprising an up-down driving step, which is based on the movement of the stage in the first direction in the scanning step to move the plurality of substrate holding mechanisms in the up-down direction. The polishing method according to claim 15, wherein the pressing step and the polishing step are in a state in which a plurality of polishing heads and the stage are sandwiched around the substrate and have a mask having the same thickness as the substrate start. The polishing method of claim 17, further comprising a moving step of releasing the pressing in the pressing step after the plurality of polishing heads and the stage reach the mask by the scanning step, and making the plurality of Each grinding head moves in the aforementioned second direction.

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