TW202208907A - Sensing apparatus - Google Patents
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
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Description
本發明是有關於一種感測裝置,且特別是有關於一種具有透光接著層的感測裝置。The present invention relates to a sensing device, and more particularly, to a sensing device having a light-transmitting adhesive layer.
在一般的感測裝置中,常會藉由導光元件進行光路的調整。然而,在感測裝置的製作過程或應用上(如:與其他元件或裝置進行整合製造的過程中),導光元件可能會剝離(peeling)。因此,如何提升感測裝置的良率及產品的可靠度,實已成目前亟欲解決的課題。In a general sensing device, the light path is often adjusted by the light guide element. However, in the fabrication process or application of the sensing device (eg, in the process of integrated fabrication with other components or devices), the light guide element may be peeled off (peeling). Therefore, how to improve the yield of the sensing device and the reliability of the product has become an urgent problem to be solved at present.
本發明提供一種感測裝置,其可以具有較小的厚度、較佳的良率及/或較佳的光訊號的品質。The present invention provides a sensing device which can have a smaller thickness, better yield and/or better optical signal quality.
本發明的感測裝置包括感測元件、第一透光保護層、遮光層、透光接著層以及導光元件。第一透光保護層位於感測元件上。遮光層位於第一透光保護層上。遮光層具有對應於感測元件的孔洞。透光接著層。位於第一透光保護層上且至少位於孔洞內。導光元件配置於透光接著層上且對應於孔洞。導光元件與遮光層之間具有間距。The sensing device of the present invention includes a sensing element, a first light-transmitting protective layer, a light-shielding layer, a light-transmitting adhesive layer, and a light-guiding element. The first light-transmitting protective layer is located on the sensing element. The light-shielding layer is located on the first light-transmitting protective layer. The light shielding layer has holes corresponding to the sensing elements. Light-transmitting adhesive layer. on the first light-transmitting protective layer and at least in the hole. The light guide element is disposed on the light-transmitting adhesive layer and corresponds to the hole. There is a distance between the light guide element and the light shielding layer.
本發明的感測裝置包括感測元件、第一透光保護層、遮光層、透光接著層以及導光元件。第一透光保護層位於感測元件上。遮光層位於第一透光保護層上。遮光層具有對應於感測元件的孔洞。透光接著層。位於第一透光保護層上且至少位於孔洞內。導光元件配置於透光接著層上且對應於孔洞。透光接著層的折射率大於導光元件的折射率。The sensing device of the present invention includes a sensing element, a first light-transmitting protective layer, a light-shielding layer, a light-transmitting adhesive layer, and a light-guiding element. The first light-transmitting protective layer is located on the sensing element. The light-shielding layer is located on the first light-transmitting protective layer. The light shielding layer has holes corresponding to the sensing elements. Light-transmitting adhesive layer. on the first light-transmitting protective layer and at least in the hole. The light guide element is disposed on the light-transmitting adhesive layer and corresponds to the hole. The refractive index of the light-transmitting adhesive layer is larger than the refractive index of the light guide element.
基於上述,藉由感測裝置的透光接著層,可以使感測裝置具有較小的厚度、較佳的良率及/或較佳的光訊號的品質。Based on the above, through the light-transmitting adhesive layer of the sensing device, the sensing device can have a smaller thickness, better yield and/or better optical signal quality.
在附圖中,為了清楚起見,放大了層、膜、面板、區域等的厚度。在整個說明書中,相同的附圖標記表示相同的元件。應當理解,當諸如層、膜、區域或基板的元件被稱為在另一元件「上」或「連接到」另一元件時,其可以直接在另一元件上或與另一元件連接,或者中間元件可以也存在。相反,當元件被稱為「直接在另一元件上」或「直接連接到」另一元件時,不存在中間元件。如本文所使用的,「連接」可以指物理及/或電性連接。再者,「電性連接」或「耦合」係可為二元件間存在其它元件。In the drawings, the thickness of layers, films, panels, regions, etc., are exaggerated for clarity. The same reference numerals refer to the same elements throughout the specification. It will be understood that when an element such as a layer, film, region or substrate is referred to as being "on" or "connected to" another element, it can be directly on or connected to the other element, or Intermediate elements may also be present. In contrast, when an element is referred to as being "directly on" or "directly connected to" another element, there are no intervening elements present. As used herein, "connected" may refer to a physical and/or electrical connection. Furthermore, "electrically connected" or "coupled" may refer to the existence of other elements between the two elements.
應當理解,儘管術語「第一」、「第二」等在本文中可以用於描述各種元件、部件、區域、層及/或部分,但是這些元件、部件、區域、及/或部分不應受這些術語的限制。這些術語僅用於將一個元件、部件、區域、層或部分與另一個元件、部件、區域、層或部分區分開。因此,下面討論的「第一元件」、「部件」、「區域」、「層」或「部分」可以被稱為第二元件、部件、區域、層或部分而不脫離本文的教導。It will be understood that, although the terms "first", "second", etc. may be used herein to describe various elements, components, regions, layers and/or sections, these elements, components, regions, and/or sections should not be limited by limitations of these terms. These terms are only used to distinguish one element, component, region, layer or section from another element, component, region, layer or section. Thus, "a first element," "component," "region," "layer" or "section" discussed below could be termed a second element, component, region, layer or section without departing from the teachings herein.
這裡使用的術語僅僅是為了描述特定實施例的目的,而不是限制性的。如本文所使用的,除非內容清楚地指示,否則單數形式「一」、「一個」和「該」旨在包括複數形式,包括「至少一個」。「或」表示「及/或」。如本文所使用的,術語「及/或」包括一個或多個相關所列項目的任何和所有組合。還應當理解,當在本說明書中使用時,術語「包括」及/或「包括」指定所述特徵、區域、整體、步驟、操作、元件的存在及/或部件,但不排除一個或多個其它特徵、區域整體、步驟、操作、元件、部件及/或其組合的存在或添加。The terminology used herein is for the purpose of describing particular embodiments only and is not limiting. As used herein, the singular forms "a", "an" and "the" are intended to include the plural forms including "at least one" unless the content clearly dictates otherwise. "Or" means "and/or". As used herein, the term "and/or" includes any and all combinations of one or more of the associated listed items. It will also be understood that, when used in this specification, the terms "comprising" and/or "comprising" designate the stated feature, region, integer, step, operation, presence of an element and/or part, but do not exclude one or more The presence or addition of other features, entireties of regions, steps, operations, elements, components, and/or combinations thereof.
此外,諸如「下」或「底部」和「上」或「頂部」的相對術語可在本文中用於描述一個元件與另一元件的關係,如圖所示。應當理解,相對術語旨在包括除了圖中所示的方位之外的裝置的不同方位。例如,如果一個附圖中的裝置翻轉,則被描述為在其他元件的「下」側的元件將被定向在其他元件的「上」側。因此,示例性術語「下」可以包括「下」和「上」的取向,取決於附圖的特定取向。類似地,如果一個附圖中的裝置翻轉,則被描述為在其它元件「下方」或「下方」的元件將被定向為在其它元件「上方」。因此,示例性術語「下面」或「下面」可以包括上方和下方的取向。Furthermore, relative terms such as "lower" or "bottom" and "upper" or "top" may be used herein to describe one element's relationship to another element, as shown in the figures. It should be understood that relative terms are intended to encompass different orientations of the device in addition to the orientation shown in the figures. For example, if the device in one of the figures is turned over, elements described as being on the "lower" side of other elements would then be oriented on "upper" sides of the other elements. Thus, the exemplary term "lower" may include an orientation of "lower" and "upper", depending on the particular orientation of the figures. Similarly, if the device in one of the figures is turned over, elements described as "below" or "beneath" other elements would then be oriented "above" the other elements. Thus, the exemplary terms "below" or "below" can include an orientation of above and below.
除非另有定義,本文使用的所有術語(包括技術和科學術語)具有與本發明所屬領域的普通技術人員通常理解的相同的含義。將進一步理解的是,諸如在通常使用的字典中定義的那些術語應當被解釋為具有與它們在相關技術和本發明的上下文中的含義一致的含義,並且將不被解釋為理想化的或過度正式的意義,除非本文中明確地這樣定義。Unless otherwise defined, all terms (including technical and scientific terms) used herein have the same meaning as commonly understood by one of ordinary skill in the art to which this invention belongs. It will be further understood that terms such as those defined in commonly used dictionaries should be construed as having meanings consistent with their meanings in the context of the related art and the present invention, and are not to be construed as idealized or excessive Formal meaning, unless expressly defined as such herein.
本文參考作為理想化實施例的示意圖的截面圖來描述示例性實施例。因此,可以預期到作為例如製造技術及/或公差的結果的圖示的形狀變化。因此,本文所述的實施例不應被解釋為限於如本文所示的區域的特定形狀,而是包括例如由製造導致的形狀偏差。例如,示出或描述為平坦的區域通常可以具有粗糙及/或非線性特徵。此外,所示的銳角可以是圓的。因此,圖中所示的區域本質上是示意性的,並且它們的形狀不是旨在示出區域的精確形狀,並且不是旨在限制權利要求的範圍。Exemplary embodiments are described herein with reference to cross-sectional illustrations that are schematic illustrations of idealized embodiments. Thus, variations in the shapes of the illustrations as a result of, for example, manufacturing techniques and/or tolerances, are to be expected. Accordingly, the embodiments described herein should not be construed as limited to the particular shapes of regions as shown herein, but rather include deviations in shapes resulting from, for example, manufacturing. For example, regions illustrated or described as flat may typically have rough and/or nonlinear features. Additionally, the acute angles shown may be rounded. Thus, the regions illustrated in the figures are schematic in nature and their shapes are not intended to illustrate the precise shape of a region and are not intended to limit the scope of the claims.
圖1A至圖1E是依照本發明的第一實施例的一種感測裝置的部分製造方法的部分剖視示意圖。圖1E可以是對應於圖1D中區域R的放大圖。1A to 1E are partial cross-sectional schematic diagrams of a part of a method for manufacturing a sensing device according to a first embodiment of the present invention. FIG. 1E may be an enlarged view corresponding to the region R in FIG. 1D .
請參照圖1A,提供感測元件110。在一實施例中,感測元件110可以是被配置於載板(未繪示)上或被形成於基板(未繪示)上,但本發明不限於此。Referring to FIG. 1A , a
在一實施例中,感測元件110可以包括對應的透光電極(未繪示)、底電極(未繪示)以及夾於透光電極與底電極之間的光感測層(未繪示),但本發明不限於此。在一實施例中,光感測層可以包括富矽氧化物(silicon-rich oxide;SRO)材料,但本發明不限於此。另外,本發明對於感測元件110中的感測單元(sensor unit)的個數並不加以限制。In one embodiment, the
請繼續參照圖1A,可以藉由一般半導體製程中常用的方式(如:鍍覆(depostion/plating)、微影(lithography)、蝕刻(etching)、清洗(cleaning)、塗佈(coating)、烘烤(baking)等,但不限),以在感測元件110上形成對應的膜層。Please continue to refer to FIG. 1A , methods commonly used in semiconductor manufacturing processes (such as: plating (depostion/plating), lithography (lithography), etching (etching), cleaning (cleaning), coating (coating), baking baking, etc., but not limited to, to form a corresponding film layer on the
在本實施例中,可以在感測元件110上形成第一透光保護層121、第一遮光層131、第一平坦層141、第二透光保護層122、第二遮光層132、第二平坦層142、第三透光保護層123、第三平坦層143、第四透光保護層124及/或第三遮光層133。在一實施例中,於上述的其中兩個膜層之間可以具有其他的膜層(如:紅外光濾光層(IR-cut layer),但不限)。各膜層的厚度可以依據設計上的需求而加以調整,於本發明並不加以限制。In this embodiment, a first light-transmitting
在一實施例中,第一透光保護層121、第二透光保護層122、第三透光保護層123及/或第四透光保護層124的至少其中之一或其中一部分可以被稱為背通道保護層(Back channel Passivation Layer;BP layer),但本發明不限於此。在一實施例中,第一透光保護層121、第二透光保護層122、第三透光保護層123及/或第四透光保護層124的材質可以包括氧化矽、氮化矽、氮氧化矽、上述之組合或上述之堆疊,但本發明不限於此。In one embodiment, at least one or a part of the first light-transmitting
在一實施例中,第一平坦層141、第二平坦層142及/或第三平坦層143中遠離感測元件110的表面(如:第一平坦層141的第一表面141a、第二平坦層142的第二表面142a及/或第三平坦層143的第三表面143a)可以為平坦面。在一實施例中,第一平坦層141、第二平坦層142及/或第三平坦層143的材質可以包含無機材料(例如:氧化矽、氮化矽、氮氧化矽、其他適宜的材質、上述之組合或上述之堆疊)、有機材料(例如:聚酯類(PET)、聚烯類、聚丙醯類、聚碳酸酯類、聚環氧烷類、聚苯烯類、聚醚類、聚酮類、聚醇類、聚醛類、其他適宜的材質、上述之組合或上述之堆疊)、上述之組合或上述之堆疊,但本發明不限於此。In one embodiment, the surfaces of the first
在一實施例中,第一透光保護層121、第二透光保護層122、第三透光保護層123、第四透光保護層124、第一平坦層141、第二平坦層142及/或第三平坦層143的至少其中之一或其中一部分可以被稱為光學準直層(optical collimation layer),但本發明不限於此。In one embodiment, the first light-transmitting
在一實施例中,第一遮光層131、第二遮光層132及/或第三遮光層133的材質可以金屬(如:銅(Cu)、鋁(Al)、鉬(Mo)、鈦(Ti)、銀(Ag)、鈮(Nb),但不限)、包含上述元素之合金或共金化合物(如:鉬鉭(MoTa)、鉬鈮(MoNb),或鉬鈦(MoTi),但不限)、前述之金屬氧化物或金屬氮氧化物(如:鉬氧化物(MoOx
)、鉬鉭氧化物(MoTaOx
)、鉬鈮氧化物(MoNbOx
)、鉬氮氧化物(MoOx
Ny
)、鉬鉭氮氧化物(MoTaOx
Ny
)、鉬鈮氮氧化物(MoNbOx
Ny
),但不限)或上述之組合或堆疊,但本發明不限於此。另外,前述的化學式中的x或y可以是一般化學式中用於表示數值的方式,且並未限定x或y為自然數或相同或固定的數值。另外,在前述合金或共金化合物中,並未限定各金屬元素的比例。In one embodiment, the material of the first light-
第一遮光層131可以具有第一孔洞131p。第一遮光層131的第一孔洞131p基本上對應或重疊於感測元件110。第二遮光層132可以具有第二孔洞132p。第二遮光層132的第二孔洞132p基本上對應或重疊於第一遮光層131的第一孔洞131p。第一孔洞131p的孔徑基本上小於第二孔洞132p的孔徑。第三遮光層133可以具有第三孔洞133p。第三遮光層133的第三孔洞133p基本上對應或重疊於第二遮光層132的第二孔洞132p。第二孔洞132p的孔徑基本上小於第三孔洞133p的孔徑。The first
在本實施例中,一個感測元件110可以對應於多個第一孔洞131p、多個第二孔洞132p及多個第三孔洞133p,但本發明不限於此。在一實施例中,一個感測元件(可以類似於相似於感測元件110)可以對應於一個第一孔洞131p、一個第二孔洞132p及一個第三孔洞133p。In this embodiment, one
請參照圖1A至圖1B,於第三遮光層133上形成透光接著材料層159。第一透光接著材料層159可以更填入第三遮光層133的第三孔洞133p,而可以覆蓋被第三孔洞133p所暴露出的部分第四透光保護層124。Referring to FIG. 1A to FIG. 1B , a light-transmitting
在本實施例中,透光接著材料層159可以是未被圖案化的膜層。In this embodiment, the light-transmitting
在一實施例中,透光接著材料層159可以是全面性地形成於第三遮光層133上。值得注意的是,前述的「全面性地形成」可以是在不具有圖案化的步驟下,將後形成的膜層藉由沉積、鍍覆或其他類似的方式,覆蓋於基板及/或先形成的膜層上。當然,在一般的半導體製程中,後形成的膜層是有可能進一步地部分覆蓋於基板及/或先形成的膜層的邊緣,或是,因沉積或鍍覆的機台既有的部件(如:用於減少側鍍的遮罩框(shadow frame)或用於固定基板的固定件(fixed parts))可能造成部分的未覆蓋區域,上述的情況皆可被包含於本發明「全面性地形成」的定義中。In one embodiment, the light-transmitting
在本實施例中,透光接著材料層159(或;由其所形成的膜層,如:後續圖式中的透光接著層151)的折射率大於第四透光保護層124的折射率。舉例而言,透光接著材料層159(或;由其所形成的膜層,如:後續圖式中的透光接著層151)的折射率可以約為1.85~2.05,且第四透光保護層124的折射率可以約為1.60~1.80。In this embodiment, the refractive index of the light-transmitting adhesive material layer 159 (or a film layer formed therefrom, such as the light-transmitting
在一實施例中,透光接著材料層159的材質可以類似但不同於第三遮光層133的材質。舉例而言,透光接著材料層159的材質可以包括透光的金屬氧化物,且第三遮光層133的材質可以包括不透光的金屬氧化物及/或金屬。又舉例而言,於一蝕刻劑中,透光接著材料層159的材質的蝕刻率不同於第三遮光層133的材質的蝕刻率。蝕刻劑可以依據對應的材質而進行選擇,於本發明並不加以限制。In one embodiment, the material of the light-transmitting
在一實施例中,藉由使透光接著材料層159的材質類似於第三遮光層133的材質,而可以提升透光接著材料層159與第三遮光層133之間的接合力。舉例而言,可以降低透光接著材料層159(或;由其所形成的膜層,如:後續圖式中的透光接著層151)自第三遮光層133剝除(peeling)的可能。In one embodiment, by making the material of the light-transmitting
在一實施例中,透光接著材料層159的材質可以包括透光的金屬氧化物(如:氧化鋅(ZnO)、氧化銦鋅(Indium-Zinc Oxide;IZO)或上述之組合,但不限)或含有摻雜(doping)的前述金屬氧化物,但本發明不限於此。In one embodiment, the material of the light-transmitting
請參照圖1B至圖1C,於透光接著材料層159上配置或形成導光元件160。導光元件160對應於第三遮光層133的第三孔洞133p。Referring to FIG. 1B to FIG. 1C , a
在本實施例中,導光元件160例如為透鏡(如:微透鏡(micro lens)),但本發明不限於此。In this embodiment, the
在一實施例中,導光元件160可以為預先成型(pre-formed)的元件,然後,被配置於透光接著材料層159上。In one embodiment, the
在一實施例中,可以在透光接著材料層159上形成透光材料層,然後,藉由適宜的方式(如:壓印,但不限)形成對應的導光元件160。In one embodiment, a light-transmitting material layer may be formed on the light-transmitting
在一實施例中,導光元件160的材質可以包括玻璃、石英或高分子聚合物,但本發明不限於此。In one embodiment, the material of the
在本實施例中,透光接著材料層159(或;由其所形成的膜層,如:後續圖式中的透光接著層151)的折射率大於導光元件160的折射率。舉例而言,導光元件160的折射率可以約為1.40~1.70。In this embodiment, the refractive index of the light-transmitting adhesive material layer 159 (or a film layer formed therefrom, such as the light-transmitting
請參照圖1C至圖1D及圖1E,於配置或形成導光元件160之後,移除部分的透光接著材料層159(標示於圖1C)以形成透光接著層151(標示於圖1D或圖1E)。Referring to FIGS. 1C to 1D and 1E, after the
在本實施例中,導光元件160可以作為蝕刻罩幕(etching mask),而可以藉由蝕刻的方式移除未被導光元件160所覆蓋的部分透光接著材料層159。如此一來,相較於藉由曝光顯影(photolithography)的方式,上述的方式可以較為簡單且成本較為低廉。舉例而言,藉由上述的方式可以省略光罩(photomask)的使用,而可以使透光接著材料層159(標示於圖1C)被圖案化而形成透光接著層151(標示於圖1D或圖1E)。In this embodiment, the
在本實施例中,藉由上述的方式,可以使導光元件160於一投影面(如:第一表面141a、第二表面142a及/或第三表面143a;或是,與上述表面相接觸的表面)上的投影面積基本上相同於對應於其的透光接著層151於前述投影面上的投影面積。舉例而言,透光接著層1511(透光接著層151的其中一部分)對應於導光元件1601(導光元件160的其中之一),且導光元件1601於一投影面上的投影面積基本上相同於透光接著層1511於前述投影面上的投影面積。In this embodiment, by the above method, the
在本實施例中,藉由上述的方式,可以使導光元件160與透光接著層151相接觸的邊緣160d基本上切齊於透光接著層151的側邊151d。In this embodiment, by the above method, the
值得一提的是,若是藉由濕蝕刻或其他類似的等向蝕刻(isotropic etching)方式,可能會使透光接著層151的側邊151d具有輕微的側蝕刻(side etching)現象,而使導光元件160於一投影面上的投影面積可能略大於對應於其的透光接著層151於前述投影面上的投影面積;且/或,使透光接著層151的側邊151d較導光元件160的邊緣160d輕微的內縮。但是,上述可能因為蝕刻方式(不限種類)所產生的側蝕刻現象,仍可以被前述說明之內容所涵蓋;且/或仍可為前述「基板上」用語之均等擴張。此外,在前述「面積基本上相同」、「邊緣基本上切齊」或類似的用語中,縱使以「面積相同」、「邊緣切齊」或類似的用語方式直接表示,但於其解釋上仍應可包括前述「基板上」用語之均等擴張。It is worth mentioning that if wet etching or other similar isotropic etching methods are used, the side edge 151d of the light-transmitting
在一可能的實施例中,也可以藉由非等向蝕刻(anisotropic etching)方式移除部分的透光接著材料層159。In a possible embodiment, part of the light-transmitting
在本實施例中,蝕刻劑(etching agent)可以至少依據導光元件160的材質、透光接著層151的材質及第三遮光層133的材質進行適應性地選擇,於本發明並不加以限制。舉例而言,蝕刻劑對透光接著層151的材質的蝕刻率(etching rate)大於蝕刻劑對導光元件160的材質的蝕刻率及第三遮光層133的材質的蝕刻率。In this embodiment, the etching agent can be adaptively selected at least according to the material of the
經過上述製造方法後可以大致上完成本實施例之感測裝置100的製作。After the above-mentioned manufacturing method, the fabrication of the
請參照圖1D及圖1E,感測裝置100包括感測元件110、第四透光保護層124、第三遮光層133、透光接著層151以及導光元件160。第四透光保護層124位於感測元件110上。第三遮光層133位於第四透光保護層124上。第三遮光層133具有對應於感測元件110的第三孔洞133p。透光接著層151位於第四透光保護層124上且至少位於第三孔洞133p內。導光元件160配置於透光接著層151上且對應於第三孔洞133p。1D and FIG. 1E , the
在本實施例中,導光元件160與第三遮光層133之間具有間距G。也就是說,導光元件160基本上不直接接觸第三遮光層133。在本實施例中,導光元件160與第三遮光層133之間至少具有透光接著層151。In this embodiment, there is a distance G between the
在本實施例中,透光接著層151可以更位於第三遮光層133上。也就是說,部分的第三遮光層133可以位於部分的透光接著層151以及第四透光保護層124之間。In this embodiment, the light-transmitting
在本實施例中,透光接著層151的相對兩側分別直接接觸第四透光保護層124及導光元件160。在一實施例中,透光接著層151可以更直接接觸第三遮光層133。舉例而言,透光接著層151可以更直接接觸第三遮光層133的第三孔洞133p的側壁。再舉例而言,透光接著層151可以更進一步地直接接觸第三遮光層133的遠離感測元件110的第三遮光表面133a。In this embodiment, opposite sides of the light-transmitting
在本實施例中,透光接著層151直接接觸第四透光保護層124,且透光接著層151的折射率大於第四透光保護層124的折射率。因此,就從透光接著層151射向第四透光保護層124的部分光線而言,透光接著層151與第四透光保護層124相接觸的表面S1可以為全反射面(total reflection surface)。如此一來,藉由透光接著層151與第四透光保護層124相接觸的表面S1,可以使入射角(incident angle)大於臨界角(critical angle)的光線被反射,而可以提升射入第四透光保護層124的光線的準直性(collimation)。因此,至少藉由上述的方式,可以降低透光接著層151與感測元件110之間至少其中之一的膜層(如:第一透光保護層121、第二透光保護層122、第三透光保護層123、第四透光保護層124、第一平坦層141、第二平坦層142及/或第三平坦層143)的厚度;且/或,可以降低透光接著層151與感測元件110之間的膜層數。膜層的數量減少或膜層的厚度降低可以提升製程的良率或品質。如此一來,可以降低感測裝置100的厚度或提升感測裝置100的良率;及/或,光訊號的品質(如:可以提升訊號雜訊比(signal-to-noise ratio;SNR))。In this embodiment, the light-transmitting
舉例而言,從透光接著層151射向第四透光保護層124的光線L1於表面S1上的入射角小於臨界角。因此,光線L1可以大部分地射入第四透光保護層124。For example, the incident angle of the light L1 emitted from the light-transmitting
舉例而言,從透光接著層151射向第四透光保護層124的光線L2於表面S1上的入射角大於臨界角。因此,光線L2可以全部反射回透光接著層151。For example, the incident angle of the light L2 from the light-transmitting
值得注意的是,於圖1D、圖1E或其他類似的圖式中,光線(如:光線L1、光線L2或其他類似的光線)的光路僅示部分性及/或示例性的繪示。It should be noted that, in FIG. 1D , FIG. 1E or other similar figures, the light paths of the light rays (eg, the light rays L1 , the light rays L2 or other similar light rays) are only partial and/or exemplary illustrations.
在本實施例中,可以使導光元件160於一投影面(如:第一表面141a、第二表面142a及/或第三表面143a;或是,與上述表面相接觸的表面)上的投影面積可以大於對應於其的第三孔洞133p於前述投影面上的投影面積。如此一來,可以提升可被導光元件160導引的光量。In this embodiment, the
圖2是依照本發明的第二實施例的一種感測裝置的部分剖視示意圖。在本實施例的感測裝置200的製造方法與第一實施例的感測裝置100的製造方法相似,其類似的構件以相同的標號表示,且具有類似的功能、材質或形成方式,並省略描述。FIG. 2 is a partial cross-sectional schematic diagram of a sensing device according to a second embodiment of the present invention. The manufacturing method of the
請參照圖2,本實施例的感測裝置200可以更包括整合於其內的顯示元件270。顯示元件270可以配置於感測元件110及/或導光元件160上。在一實施例中,感測裝置200可以被稱為屏下指紋感測器(under display fingerprint sensor),但本發明不限於此。Referring to FIG. 2 , the
顯示元件270可以包括液晶顯示元件、有機發光二極體顯示元件、發光二極體顯示元件或其他適宜的顯示元件,於本發明並不加以限制。另外,在圖2中,顯示元件270的配置方式及大小僅是示意性地繪示,於本發明並不加以限制。The
舉例而言,顯示元件270中的發光單元271可以發出對應的光線。部分的光線L3可以被保護層(如:覆蓋膜(coverlay),但不限)272上的手指F反射後,可以射向導光元件160。並且,適當角度的光線可以經由導光元件160、透光接著層151及第四透光保護層124而射向感測元件110。For example, the
發光單元271例如是發光二極體或對應的畫素單元(pixel unit),於本發明並不加以限制。The light-emitting
圖3是依照本發明的第三實施例的一種感測裝置的部分剖視示意圖。在本實施例的感測裝置300的製造方法與第一實施例的感測裝置100的製造方法相似,其類似的構件以相同的標號表示,且具有類似的功能、材質或形成方式,並省略描述。3 is a partial cross-sectional schematic diagram of a sensing device according to a third embodiment of the present invention. The manufacturing method of the
請參照圖3,感測裝置300可以更包括位於第四透光保護層124與感測元件110之間至少一高折射透光層(如:高折射透光層352或高折射透光層353的至少其中之一)。高折射透光層的材質或形成方式可以相同或相似於透光接著材料層159。也就是說,高折射透光層的折射率可以約為1.85~2.05。Referring to FIG. 3 , the
值得注意的是,於圖3中為示例性地繪示高折射透光層352及高折射透光層353。在一未繪示的實施例中,類似於感測裝置300的感測裝置可以包括高折射透光層352或高折射透光層353的其中之一;或是,包括類似於高折射透光層352或高折射透光層353的高折射透光層。It is worth noting that the high-refractive light-transmitting
在本實施例中,高折射透光層可以位於對應的透光保護層上且直接接觸透光保護層。此一來,可以提升射入透光保護層的光線的準直性。In this embodiment, the high-refractive light-transmitting layer may be located on the corresponding light-transmitting protective layer and directly contact the light-transmitting protective layer. In this way, the collimation of light entering the light-transmitting protective layer can be improved.
在本實施例中,感測裝置300可以更包括高折射透光層352。高折射透光層352的依據設計上的需求而被圖案化。高折射透光層352可以嵌入第二遮光層132的第二孔洞132p。高折射透光層352可以位於第二透光保護層122上且直接接觸第二透光保護層122。並且,高折射透光層352的折射率可以大於第二透光保護層122的折射率。如此一來,可以提升射入第二透光保護層122的光線的準直性。In this embodiment, the
在本實施例中,感測裝置300可以更包括高折射透光層353。高折射透光層353可以位於第三透光保護層123上且直接接觸第三透光保護層123。並且,高折射透光層353的折射率可以大於第三透光保護層123的折射率。如此一來,可以提升射入第三透光保護層123的光線的準直性。In this embodiment, the
綜上所述,本發明的感測裝置可以具有較小的厚度、較佳的良率及/或較佳的光訊號的品質。In conclusion, the sensing device of the present invention can have a smaller thickness, better yield and/or better optical signal quality.
100、200、300:感測裝置
110:感測元件
121:第一透光保護層
122:第二透光保護層
123:第三透光保護層
124:第四透光保護層
131:第一遮光層
131p:第一孔洞
132:第二遮光層
132p:第二孔洞
133:第三遮光層
133p:第三孔洞
133a:第三遮光表面
141:第一平坦層
141a:第一表面
142:第二平坦層
142a:第二表面
143:第三平坦層
143a:第三表面
151、1511:透光接著層
151d: 側邊
159:透光接著材料層
160、1601:導光元件
160d:邊緣
270:顯示元件
271:發光單元
272:保護層
352、353:高折射透光層
F:手指
G:間距
R:區域
S1:表面
L1、L2、L3:光線100, 200, 300: Sensing device
110: Sensing element
121: The first light-transmitting protective layer
122: The second light-transmitting protective layer
123: The third light-transmitting protective layer
124: The fourth light-transmitting protective layer
131: The first shading layer
131p: The first hole
132: Second shading layer
132p: second hole
133: The third shading layer
133p: The third hole
133a: Third light-shielding surface
141: First
圖1A至圖1E是依照本發明的第一實施例的一種感測裝置的部分製造方法的部分剖視示意圖。 圖2是依照本發明的第二實施例的一種感測裝置的部分剖視示意圖。 圖3是依照本發明的第三實施例的一種感測裝置的部分剖視示意圖。1A to 1E are partial cross-sectional schematic diagrams of a part of a method for manufacturing a sensing device according to a first embodiment of the present invention. FIG. 2 is a partial cross-sectional schematic diagram of a sensing device according to a second embodiment of the present invention. 3 is a partial cross-sectional schematic diagram of a sensing device according to a third embodiment of the present invention.
124:第四透光保護層124: The fourth light-transmitting protective layer
133:第三遮光層133: The third shading layer
143:第三平坦層143: Third Flat Layer
143a:第三表面143a: Third surface
151:透光接著層151: light-transmitting adhesive layer
151d:側邊151d: side
160:導光元件160: light guide element
160d:邊緣160d: Edge
G:間距G: Spacing
R:區域R: area
S1:表面S1: Surface
L2:光線L2: light
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2021
- 2021-01-26 TW TW110102833A patent/TWI785478B/en active
- 2021-03-18 TW TW110109694A patent/TWI761139B/en active
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Also Published As
Publication number | Publication date |
---|---|
TWI764634B (en) | 2022-05-11 |
TWI761139B (en) | 2022-04-11 |
TW202209169A (en) | 2022-03-01 |
TW202208885A (en) | 2022-03-01 |
TWI785478B (en) | 2022-12-01 |
TWI759153B (en) | 2022-03-21 |
TW202209691A (en) | 2022-03-01 |
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