TW202206866A - Package structure having photonic integrated circuit - Google Patents
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本揭露係關於一種具有光子集成電路的封裝結構。更進一步地,本揭露係關於一種光學模組內嵌於光子集成電路之封裝結構。The present disclosure relates to a package structure with a photonic integrated circuit. Furthermore, the present disclosure relates to a package structure in which an optical module is embedded in a photonic integrated circuit.
圖1為一種習知之封裝結構1之示意圖。如圖1所示,封裝結構1具有晶片10、光學模組20、載體30及電路板40。晶片10與光學模組20相鄰地藉由例如樹脂黏貼在載體30上,材料為陶瓷或矽材的背板41藉由例如樹脂黏貼在電路板40之背面上,並至少部分從電路板40之開口區域露出,載體30藉由例如樹脂黏貼固定於從電路板40之開口區域露出的背板41上,而電路板40上之電路則對應地設置在載體30周圍。其中,電路板40之開口區域係用來降低晶片10與光學模組20設置於電路板40後之突出高度。FIG. 1 is a schematic diagram of a
在習知之封裝結構1中,由於光學模組20之厚度通常高於晶片10之厚度,因此為了設置光學模組20,會藉由載體30來同時承載晶片10與光學模組20,而晶片10與光學模組20則與電路板40上之電路藉由打線接合。In the
然而,由於晶片10與光學模組20與電路板40上之電路利用打線接合,封裝結構1之射頻性能(RF performance)會受到接合線長度的影響。亦即,電路板40上之電路、晶片10及光學模組20之設置位置必須較為精確,若相對位置與設計有些微差異,都有可能造成接合線長度的不同,進而使得封裝結構1之射頻性能受到影響。換言之,在習知之封裝結構1中,其設置電路板40上之電路、晶片10及光學模組20時之容錯率較低。另外,晶片10及光學模組20黏貼固定於載體30上,載體30黏貼固定於電路板40背面之背板41上,黏貼固定後較難重新分離及結合,也會造成習知之結構難以重工(rework)的問題。However, since the circuits on the
更進一步來說,由於晶片10與光學模組20相鄰地設置在載體30上,彼此的電訊號也可能產生串擾(crosstalk)等問題。另外,在習知之封裝結構1中,需要分別對於入射光之光路及出射光之光路設置光纖,而會使得成本提高。Furthermore, since the
上文之「先前技術」說明僅係提供背景技術,並未承認上文之「先前技術」說明揭示本揭露之標的,不構成本揭露之先前技術,且上文之「先前技術」之任何說明均不應做為本案之任一部分。The above description of "prior art" is for background only, and does not acknowledge that the above description of "prior art" discloses the subject matter of the present disclosure, does not constitute the prior art of the present disclosure, and any description of the above "prior art" shall not be part of this case.
本揭露的實施例提供一種封裝結構,包括一基板、一晶片及一光學模組。晶片具有一光波導結構及一凹部。光波導結構鄰設於凹部。凹部面對基板,晶片覆晶接合於基板。光學模組設置於晶片之凹部。Embodiments of the present disclosure provide a package structure including a substrate, a chip, and an optical module. The chip has an optical waveguide structure and a concave portion. The optical waveguide structure is adjacent to the concave portion. The concave portion faces the substrate, and the flip chip is bonded to the substrate. The optical module is arranged in the concave part of the chip.
在一些實施例中,基板具有一光學模組用凹部,且該光學模組延伸至該光學模組用凹部內。In some embodiments, the substrate has a recess for an optical module, and the optical module extends into the recess for an optical module.
在一些實施例中,光學模組包括一光源及一透鏡,光源產生之光線穿過透鏡後入射至晶片之光波導結構。 在一些實施例中,晶片係覆晶型光子積體電路。In some embodiments, the optical module includes a light source and a lens, and the light generated by the light source passes through the lens and then enters the optical waveguide structure of the chip. In some embodiments, the wafer is a flip-chip photonic integrated circuit.
在一些實施例中,晶片與一光波導連接組件連接。In some embodiments, the wafer is connected to an optical waveguide connection assembly.
在一些實施例中,基板具有一光波導連接組件用凹部,且光波導連接組件延伸至光波導連接組件用凹部內。In some embodiments, the substrate has a recess for the optical waveguide connection component, and the optical waveguide connection component extends into the recess for the optical waveguide connection component.
本揭露的實施例提供另一種封裝結構,包括一基板、一第一晶片、一第二晶片、一第三晶片及一光學模組。第一晶片覆晶接合於基板。第二晶片覆晶接合於基板,並與第一晶片間隔設置。第三晶片設置於第一晶片及第二晶片之上。光學模組設置於第三晶片,並位於基板與第三晶片之間。Embodiments of the present disclosure provide another package structure including a substrate, a first chip, a second chip, a third chip, and an optical module. The first flip chip is bonded to the substrate. The second wafer flip chip is bonded to the substrate and is spaced apart from the first wafer. The third wafer is disposed on the first wafer and the second wafer. The optical module is arranged on the third chip, and is located between the substrate and the third chip.
在一些實施例中,第三晶片具有一凹部,其面對基板並位於第一晶片與第二晶片之間,且光學模組位於凹部。In some embodiments, the third wafer has a concave portion facing the substrate and located between the first wafer and the second wafer, and the optical module is located in the concave portion.
在一些實施例中,基板具有一光學模組用凹部,且光學模組延伸至光學模組用凹部內。在一些實施例中,光學模組包括一光源及一透鏡,光源產生之光線穿過透鏡後入射至第一晶片、第二晶片或第三晶片。In some embodiments, the substrate has a recess for the optical module, and the optical module extends into the recess for the optical module. In some embodiments, the optical module includes a light source and a lens, and the light generated by the light source passes through the lens and then enters the first chip, the second chip or the third chip.
在一些實施例中,第三晶片與一光波導連接組件連接。In some embodiments, the third wafer is connected to an optical waveguide connection assembly.
在一些實施例中,基板具有一光波導連接組件用凹部,且光波導連接組件延伸至光波導連接組件用凹部內。In some embodiments, the substrate has a recess for the optical waveguide connection component, and the optical waveguide connection component extends into the recess for the optical waveguide connection component.
在本揭露中,封裝結構之晶片係藉由覆晶接合於基板,且光學模組設置在基板與晶片之間。因此,由於本揭露之封裝結構之晶片利用覆晶接合來連接,而可避免藉由打線接合時之接合線長度而造成射頻性能影響之問題。亦即,在本揭露之封裝結構中,晶片、光學模組及基板之相對位置的容錯率高於習知之封裝結構。且,本揭露之封裝結構將基板、晶片及光學模組封裝後,不需要藉由載體而可直接與其他電路板作連接,換言之,本揭露之封裝結構與其他電路板較容易進行重新分離及結合,亦即相較於習知之結構較容易進行重工。In the present disclosure, the chip of the package structure is bonded to the substrate by flip-chip, and the optical module is disposed between the substrate and the chip. Therefore, since the chips of the package structure of the present disclosure are connected by flip-chip bonding, the problem of affecting the RF performance caused by the length of the bonding wires during wire bonding can be avoided. That is, in the package structure of the present disclosure, the relative position error tolerance of the chip, the optical module and the substrate is higher than that of the conventional package structure. Moreover, after the packaging structure of the present disclosure encapsulates the substrate, the chip and the optical module, it can be directly connected to other circuit boards without a carrier. In other words, the packaging structure of the present disclosure can be easily re-separated from other circuit boards. Combined, ie easier to rework than conventional structures.
此外,本揭露之封裝結構中,光學模組例如內嵌於晶片內,因此可藉由將彼此的電訊號路徑分開,而避免串擾的問題,且不需要分別對於入射光之光路及出射光之光路設置光纖,可使得成本降低。In addition, in the package structure of the present disclosure, the optical modules are embedded in the chip, for example, so the problem of crosstalk can be avoided by separating the electrical signal paths from each other, and there is no need to separate the optical path of the incident light and the optical path of the outgoing light. The optical path is provided with optical fiber, which can reduce the cost.
上文已相當廣泛地概述本揭露之技術特徵及優點,俾使下文之本揭露詳細描述得以獲得較佳瞭解。構成本揭露之申請專利範圍標的之其它技術特徵及優點將描述於下文。本揭露所屬技術領域中具有通常知識者應瞭解,可相當容易地利用下文揭示之概念與特定實施例可做為修改或設計其它結構或製程而實現與本揭露相同之目的。本揭露所屬技術領域中具有通常知識者亦應瞭解,這類等效建構無法脫離後附之申請專利範圍所界定之本揭露的精神和範圍。The foregoing has outlined rather broadly the technical features and advantages of the present disclosure in order that the detailed description of the present disclosure that follows may be better understood. Additional technical features and advantages that form the subject of the scope of the present disclosure are described below. It should be understood by those skilled in the art to which the present disclosure pertains that the concepts and specific embodiments disclosed below can be readily utilized to modify or design other structures or processes to achieve the same purposes of the present disclosure. Those skilled in the art to which the present disclosure pertains should also understand that such equivalent constructions cannot depart from the spirit and scope of the present disclosure as defined by the appended claims.
圖式所示之揭露內容的實施例或範例係以特定語言描述。應理解此非意圖限制本揭露的範圍。所述實施例的任何變化或修飾以及本案所述原理任何進一步應用,對於本揭露相關技藝中具有通常技術者而言為可正常發生。元件符號可重複於各實施例中,但即使它們具有相同的元件符號,實施例中的特徵並非必定用於另一實施例。Embodiments or examples of the disclosure shown in the drawings are described in specific languages. It should be understood that this is not intended to limit the scope of the present disclosure. Any variation or modification of the described embodiments and any further application of the principles described herein would normally occur to those of ordinary skill in the art to which this disclosure relates. Reference numerals may be repeated in various embodiments, but features in one embodiment are not necessarily used in another embodiment even if they have the same reference numerals.
應理解雖然在本文中可使用第一、第二、第三等用語描述各種元件、組件、區域、層或區段,然而,這些元件、組件、區域、層或區段應不受限於這些用語。這些用語僅用於區分一元件、組件、區域、層或區段與另一區域、層或區段。因此,以下所述之第一元件、組件、區域、層或區段可被稱為第二元件、組件、區域、層或區段,而仍不脫離本揭露發明概念之教示內容。It will be understood that although the terms first, second, third, etc. may be used herein to describe various elements, components, regions, layers or sections, these elements, components, regions, layers or sections should not be limited by these term. These terms are only used to distinguish one element, component, region, layer or section from another region, layer or section. Thus, a first element, component, region, layer or section discussed below could be termed a second element, component, region, layer or section without departing from the teachings of the inventive concept of the present disclosure.
本揭露所使用的語詞僅用於描述特定例示實施例之目的,並非用以限制本發明概念。如本文所使用,單數形式「一」與「該」亦用以包含複數形式,除非本文中另有明確指示。應理解說明書中所使用的「包括」一詞專指所稱特徵、整數、步驟、操作、元件或組件的存在,但不排除一或多個其他特徵、整數、步驟、操作、元件、組件或其群組的存在。The terms used in this disclosure are for the purpose of describing particular example embodiments only, and are not intended to limit the inventive concept. As used herein, the singular forms "a" and "the" are also intended to include the plural forms unless the context clearly dictates otherwise. It should be understood that the word "comprising" as used in the specification refers exclusively to the presence of a stated feature, integer, step, operation, element or component, but does not exclude one or more other features, integers, steps, operations, elements, components or the existence of its group.
圖2為本揭露之一種封裝結構2之立體示意圖,圖3A為沿圖2之A-A直線之封裝結構2之剖面圖,圖3B為沿圖2之B-B直線之封裝結構2之剖面圖。2 is a schematic perspective view of a
如圖2、圖3A及圖3B所示,在某些實施例中,封裝結構2包括基板200、晶片210及光學模組220。基板200例如是電路板,其具有之電路結構非限制性,例如可以是多層式電路結構、或者其他合適之電路結構。在某些實施例中,在基板200上,相對於晶片210的另一面可以設置有複數凸塊或錫球201,以使封裝結構2可與其他元件電性連接。As shown in FIG. 2 , FIG. 3A and FIG. 3B , in some embodiments, the
晶片210具有光波導結構211及凹部212。光波導結構211鄰設於凹部212,凹部212面對基板200。換言之,凹部212位於晶片210與基板200之間,而光波導結構211則位在凹部212的一側。進一步來說,凹部212之形狀非限制性,其可以是長槽狀並延伸過晶片210之兩側(如圖3A所示,晶片210呈ㄇ字型),或者是凹槽狀且沒有延伸過晶片210之兩側。另外,須注意的是,光波導結構211之結構非限制性。晶片210係利用覆晶(flip chip)接合於基板200。在某些實施例中,複數微凸塊或錫球213設置在晶片210與基板200之間,以使晶片210與基板200電性連接。晶片210例如可以是覆晶型光子積體電路(photonic integrated circuit, PIC)。The
光學模組220設置於晶片210之凹部212中。光學模組220位於晶片210與基板200之間,且與晶片210及基板200電性連接。在某些實施例中,光學模組220可以經由晶片210與基板200電性連接,亦即光學模組220設置於晶片210,並經由晶片210覆晶接合於基板200而與基板200電性連接。The
圖4A為本揭露之一種晶片210及光學模組220之仰視圖,圖4B為本揭露之一種晶片210及光學模組220之側視圖。如圖4A所示,在某些實施例中,光學模組220可以具有光源221及透鏡222,光源221及透鏡222設置於凹部212中。光源221所產生之光線可沿光路L經由透鏡222入射至晶片210之光波導結構211中,並出射至與晶片210相接之外部元件(例如,光纖91)。如圖4B所示,光學模組220之光源221例如經由晶片210覆晶接合於基板200而與基板200電性連接(例如,經由路徑E)。光源221例如可以是雷射二極體(Laser Diode)或發光二極體(Light Emitting Diode)。4A is a bottom view of a
綜上所述,本揭露之封裝結構2之晶片210藉由覆晶接合於基板200,且光學模組220設置在基板200與晶片210之間。因此,由於封裝結構2之晶片210利用覆晶接合來連接,而可避免藉由打線接合時之接合線長度而造成射頻性能影響之問題。亦即,在封裝結構2中,晶片210、光學模組220及基板200之相對位置的容錯率高於習知之封裝結構1(如圖1所示)。To sum up, the
圖3C為本揭露之一種封裝結構2與電路板400結合之立體示意圖,圖3D為沿圖3C之A-A直線之封裝結構2之剖面圖。如圖3C及圖3D所示,封裝結構2並不需要藉由載體固定於電路板400,亦可增加封裝結構2之重工的自由度。FIG. 3C is a schematic perspective view of a
此外,本揭露之封裝結構2中,光學模組220例如內嵌於凹部212內,因此可藉由使光學模組220之電訊號路徑(例如,圖4B之左側路徑E)與晶片210之電訊號路徑(例如,圖4B之右側路徑E)不同,避免串擾之產生。再者,本揭露之封裝結構2可不需要分別對於入射光之光路及出射光之光路設置光纖,使得成本降低。In addition, in the
圖5A為本揭露之另一種封裝結構5之示意圖,圖5B為如圖5A之封裝結構5與光波導連接組件9之連接方式之示意圖。在某些實施例中,光波導連接組件9以懸掛在晶片510之形式與晶片510連接。FIG. 5A is a schematic diagram of another
如圖5A及圖5B所示,封裝結構5包括基板500、晶片510及光學模組520。其中,晶片510及光學模組520與圖2、圖3A、圖3B、圖4A、圖4B之晶片210及光學模組220之結構類似,於此不再贅述。As shown in FIG. 5A and FIG. 5B , the
封裝結構5與圖2、圖3A、圖3B、圖4A、圖4B之封裝結構2之差異在於:基板500具有光波導連接組件用凹部502,光波導連接組件用凹部502於俯視上與晶片510不重疊,且光波導連接組件用凹部502沒有被晶片510所覆蓋。然其非限制,光波導連接組件用凹部502也可以部分被晶片510所覆蓋,亦即,光波導連接組件用凹部502至少部分設置於基板500上與晶片510重疊之區域外。The difference between the
因此,封裝結構5除具有如封裝結構2之上述各種功效外,當光波導連接組件9的尺寸較大,藉由基板500之光波導連接組件用凹部502,可使光波導連接組件9以懸掛的形式與晶片510連接時,光波導連接組件9不會受到基板500之影響,而可延伸至基板500之光波導連接組件用凹部502內,從而可避免光波導連接組件9與基板500接觸,以讓光波導連接組件9之光纖91更準確地與晶片510之光波導結構511對接。需注意的是,光波導連接組件9的尺寸較小(例如,不會延伸至基板500)時,則可不需設置光波導連接組件用凹部502。Therefore, in addition to the above-mentioned various functions of the
圖6A為本揭露之另一種基板600之示意圖,圖6B為本揭露之另一種封裝結構6之示意圖。FIG. 6A is a schematic diagram of another
如圖6A及圖6B所示,封裝結構6包括基板600、晶片610及光學模組640。其中,晶片610及光學模組640與圖2、圖3A、圖3B、圖4A、圖4B之晶片210及光學模組220之結構類似,於此不再贅述。As shown in FIG. 6A and FIG. 6B , the
封裝結構6與圖2、圖3A、圖3B之封裝結構2之差異在於:基板600具有光波導連接組件用凹部602及光學模組用凹部603,光波導連接組件用凹部602設置於基板600上與晶片610重疊之區域外,光學模組用凹部603設置於基板600上與晶片610之凹部612重疊之區域,然其非限制,光波導連接組件用凹部602可以至少部分設置於基板600上與晶片610重疊之區域外,光學模組用凹部603可以至少部分設置於基板600上與晶片610之凹部612重疊之區域。光學模組640設置在晶片610上並延伸至光學模組用凹部603內。需注意的是,於此以光波導連接組件用凹部602及光學模組用凹部603連通為例作說明,然其非限制性,光波導連接組件用凹部602及光學模組用凹部603亦可彼此不連通,例如基板600之一部分在光波導連接組件用凹部602及光學模組用凹部603之間以隔離光波導連接組件用凹部602及光學模組用凹部603。再者,在某些實施例中,也可以僅在基板600上設置光波導連接組件用凹部602或光學模組用凹部603。The difference between the
因此,封裝結構6除具有如封裝結構2之上述各種功效外,當光波導連接組件9的尺寸較大,藉由基板600之光波導連接組件用凹部602,可使光波導連接組件9(如圖5B所示)以懸掛的形式與晶片610連接時,光波導連接組件9不會受到基板600之影響,而可延伸至基板600之光波導連接組件用凹部602內,從而可避免光波導連接組件9與基板600接觸,以讓光波導連接組件9之光纖91(如圖5B所示)更準確地與晶片610之光波導結構611對接。藉由基板600之光學模組用凹部603,例如可減少晶片610之凹部612的所需深度,也可以增加基板600與晶片610之間容納光學模組640之容納空間。換句話說,晶片610之凹部612與基板600之光學模組用凹部603可以互相匹配來形成容納光學模組640之容納空間,藉此可以依要求對凹部612或光學模組用凹部603的深度作調整(例如,使凹部612變淺,並相應地使光學模組用凹部603變深等),並同時維持容納光學模組640之所需空間。Therefore, in addition to the above-mentioned various functions of the
圖7為本揭露之另一種封裝結構7之示意圖。在某些實施例中,封裝結構7包括基板700、第一晶片710、第二晶片720、第三晶片730及光學模組740。基板700例如是電路板,其具有之電路結構非限制性,例如可以是多層式電路結構、或者其他合適之電路結構。在某些實施例中,在基板700上,相對於第一晶片710、第二晶片720及第三晶片730的另一面可以設置有複數凸塊或錫球701,以使基板700可與其他元件電性連接。FIG. 7 is a schematic diagram of another
第一晶片710、第二晶片720及第三晶片730可以是相同晶片或不同晶片。第一晶片710覆晶接合於基板700,第二晶片720覆晶接合於基板700,並與第一晶片710間隔設置,第三晶片730設置於第一晶片710及第二晶片720之上。在某些實施例中,第三晶片730覆晶接合於第一晶片710及第二晶片720。在某些實施例中,第三晶片730與第一晶片710及/或第二晶片720電性連接。The
在某些實施例中,第一晶片710及第二晶片720可以是空白晶片(dummy chip),用來與第三晶片730共同形成空間712。在某些實施例中,第三晶片730堆疊在第一晶片710及第二晶片720之上,且未有與第一晶片710及/或第二晶片720電性連接。在另外一些實施例中,第一晶片710、第二晶片720及第三晶片730可以是具有不同功能的晶片,同時共同形成空間712。第一晶片710、第二晶片720及第三晶片730的任一者或者全部可以具有光波導結構711。在本實例中,以第一晶片710具有光波導結構711為例作說明,但其非限制性。光波導結構711鄰設於空間712,空間712面對基板700。換言之,空間712係位在基板700、第一晶片710、第二晶片720及第三晶片730與基板700之間,而光波導結構711位在空間712的一側(例如,設置於第一晶片710)。另外,須注意的是,光波導結構711之結構非限制性。在某些實施例中,複數微凸塊或錫球713設置在第一晶片710、第二晶片720與基板700之間,以使第一晶片710、第二晶片720與基板700電性連接。第一晶片710、第二晶片720及第三晶片730例如可以是覆晶型光子積體電路。In some embodiments, the
光學模組740設置於第三晶片730,並位於基板700與第三晶片730之間。光學模組740位於第一晶片710、第二晶片720及第三晶片730形成的空間712內,與第三晶片730及基板700電性連接。光學模組740可以包括光源及透鏡,光源產生之光線穿過透鏡後入射至第一晶片710、第二晶片720或第三晶片730。光學模組740與圖2、圖3A、圖3B、圖4A、圖4B之光學模組220之結構類似,於此不再贅述。The
綜上所述,本揭露之封裝結構7藉由第一晶片710、第二晶片720及第三晶片730形成空間712,且光學模組740設置在空間712。因此,由於封裝結構7之第一晶片710、第二晶片720及第三晶片730可以利用覆晶接合來連接,而可避免藉由打線接合時之接合線長度而造成射頻性能影響之問題。亦即,在封裝結構7中,第一晶片710、第二晶片720、第三晶片730、光學模組740及基板700之相對位置的容錯率高於習知之封裝結構1(如圖1所示)。且,封裝結構7並不需要藉由載體固定於電路板(未圖示),亦可增加封裝結構7之重工的自由度。To sum up, in the
此外,本揭露之封裝結構7中,光學模組740例如內嵌於第一晶片710、第二晶片720及第三晶片730形成的空間712內,因此可藉由使光學模組740之電訊號路徑與第一晶片710、第二晶片720及第三晶片730之電訊號路徑不同,避免串擾之產生。再者,本揭露之封裝結構2可不需要分別對於入射光之光路及出射光之光路設置光纖,使得成本降低。In addition, in the
圖8為本揭露之另一種封裝結構8之示意圖。如圖8所示,封裝結構8包括基板800、第一晶片810、第二晶片820、第三晶片830及光學模組840。其中,第一晶片810、第二晶片820、第三晶片830及光學模組840與圖7之第一晶片710、第二晶片220、第三晶片730及光學模組740之結構類似,於此不再贅述。FIG. 8 is a schematic diagram of another packaging structure 8 of the disclosure. As shown in FIG. 8 , the package structure 8 includes a
封裝結構8與圖7之封裝結構7之差異在於:基板800具有光學模組用凹部803,光學模組用凹部803設置於基板800上與第一晶片810、第二晶片820及第三晶片830形成的空間812重疊之區域。然其非限制,光學模組用凹部803也可以至少部分設置於基板800上與第一晶片810、第二晶片820及第三晶片830形成的空間812重疊之區域。The difference between the package structure 8 and the
因此,封裝結構8除具有如封裝結構7之上述各種功效外,藉由基板800之光學模組用凹部803與空間812重疊之區域,例如可以增加基板800、第一晶片810、第二晶片820及第三晶片830之間容納光學模組840之容納空間。進言之,藉此可以依要求對第一晶片810及第二晶片820的厚度作調整(例如,使第一晶片810及第二晶片820變薄淺,並相應地使光學模組用凹部803變深等),並同時維持容納光學模組840之所需空間。Therefore, in addition to the above-mentioned various functions of the package structure 8, the package structure 8 can increase the
圖9為本揭露之另一種封裝結構9之示意圖。如圖9所示,封裝結構9包括基板900、第一晶片910、第二晶片920、第三晶片930及光學模組940。其中,第一晶片910、第二晶片920及光學模組940與圖7之第一晶片910、第二晶片920及光學模組940之結構類似,於此不再贅述。FIG. 9 is a schematic diagram of another
封裝結構9與圖7、8之封裝結構7、8之差異在於:基板900具有光學模組用凹部903,第三晶片930也具有凹部931。光學模組用凹部903設置於基板900上與第三晶片930之凹部931重疊之區域,然其非限制,光學模組用凹部903也可以至少部分設置於基板900上與第三晶片930之凹部931重疊之區域。The difference between the
因此,封裝結構9除具有如封裝結構7、8之上述各種功效外,藉由第三晶片930也具有凹部931,例如可以增加基板900、第一晶片910、第二晶片920及第三晶片930之間容納光學模組940之容納空間。進言之,藉此可以依要求對第一晶片910及第二晶片920的厚度作調整(例如,使第一晶片910及第二晶片920變薄淺,並相應地使光學模組用凹部903及凹部931變深等),並同時維持容納光學模組940之所需空間。Therefore, in addition to the above-mentioned various functions of the
另外,值得一提的是,如圖6A之基板600具有光波導連接組件用凹部602,圖7、圖8及圖9之基板700、800、900亦可分別具有光波導連接組件用凹部(圖未示),且使光波導連接組件用凹部分別至少部分設置於基板700、800、900上與第一晶片710、810、910、第二晶片820、820、920及第三晶片730、830、930重疊之區域外,以使光波導連接組件9(如圖5B所示)可延伸至光波導連接組件用凹部內。In addition, it is worth mentioning that the
圖10A~圖10F為本揭露之一種如圖5A及圖5B之封裝結構5之製造流程示意圖。如圖10A所示,於晶片510上可以先形成複數焊墊514及複數微凸塊或錫球513。如圖10B所示,接著於晶片510上蝕刻形成凹部512。蝕刻方式例如可以是乾式蝕刻或濕式蝕刻。FIGS. 10A to 10F are schematic diagrams illustrating a manufacturing process of the
值得一提的是,若是如圖7、8所示之封裝結構7、8,該等晶片上可以不需要形成凹部,而可以藉由將該等晶片彼此接合來形成與相似於凹部的空間。若是如圖9所示之封裝結構9,則可以先於第三晶片930上形成凹部931後,再將第三晶片930與第一晶片910及第二晶片920接合。It is worth mentioning that, in the case of the
如圖10C所示,將光學模組520設置於凹部512內。光學模組520例如可以具有光源521及透鏡522,光學模組520於凹部512內的設置位置並非限制性。如圖10D所示,將晶片510覆晶接合於基板500,基板500可以先設置有光波導連接組件用凹部502。值得一提的是,基板可如圖2之基板200不具有凹部,也可以如圖6A之基板600,具有光波導連接組件用凹部602及光學模組用凹部603。關於光波導連接組件用凹部602及光學模組用凹部603已於圖6A、圖6B中詳述,於此不再贅述。As shown in FIG. 10C , the
如圖10E所示,在基板500上相對於晶片的另一面設置複數焊墊504及複數凸塊或錫球501,以使封裝結構5(如圖5A或10F所示)可與其他元件電性連接。如圖10F所示,將光波導連接組件9與封裝結構5連接。在某些實施例中,光波導連接組件9可以利用懸掛的形式設置於晶片510上,並延伸至基板500之光波導連接組件用凹部502內。As shown in FIG. 10E , a plurality of
需注意的是,上述流程步驟並非限制性,依不同需要可有不同的順序,依不同結構設計也可以增加或減少流程步驟。It should be noted that the above process steps are not limitative, and may be in different sequences according to different needs, and the process steps may also be added or reduced according to different structural designs.
雖然已詳述本揭露及其優點,然而應理解可進行各種變化、取代與替代而不脫離申請專利範圍所定義之本揭露的精神與範圍。例如,可用不同的方法實施上述的許多製程,並且以其他製程或其組合替代上述的許多製程。Although the present disclosure and its advantages have been described in detail, it should be understood that various changes, substitutions and alterations can be made herein without departing from the spirit and scope of the disclosure as defined by the scope of the claims. For example, many of the processes described above may be implemented in different ways and replaced by other processes or combinations thereof.
再者,本申請案的範圍並不受限於說明書中所述之製程、機械、製造、物質組成物、手段、方法與步驟之特定實施例。該技藝之技術人士可自本揭露的揭示內容理解可根據本揭露而使用與本文所述之對應實施例具有相同功能或是達到實質相同結果之現存或是未來發展之製程、機械、製造、物質組成物、手段、方法、或步驟。據此,此等製程、機械、製造、物質組成物、手段、方法、或步驟係包含於本申請案之申請專利範圍內。Furthermore, the scope of this application is not limited to the specific embodiments of the processes, machines, manufacture, compositions of matter, means, methods and steps described in the specification. Those skilled in the art can understand from the disclosure of the present disclosure that existing or future processes, machines, manufactures, and materials that have the same functions or achieve substantially the same results as the corresponding embodiments described herein can be used in accordance with the present disclosure. A composition, means, method, or step. Accordingly, such processes, machines, manufactures, compositions of matter, means, methods, or steps are included within the scope of the claims of this application.
1、2、5、6、7、8、9:封裝結構
10、210、510、610:晶片
20、220、520、640、740、840、940:光學模組
30:載體
40、400:電路板
200、500、600、700、800、900:基板
201、501、701:凸塊或錫球
211、511、711:光波導結構
212、512、612、931:凹部
213、713:微凸塊或錫球
221:光源
222:透鏡
502、602:光波導連接組件用凹部
504、514:焊墊
603、803、903:光學模組用凹部
710、810、910:第一晶片
712、812、912:空間
720、820、920:第二晶片
730、830、930:第三晶片
9:光波導連接組件
91:光纖
E:路徑
L:光路1, 2, 5, 6, 7, 8, 9:
參閱詳細說明與申請專利範圍結合考量圖式時,可得以更全面了解本申請案之揭示內容,圖式中相同的元件符號係指相同的元件。 圖1為一種習知之封裝結構之示意圖。 圖2為本揭露之一種封裝結構之立體示意圖。 圖3A為沿圖2之A-A直線之封裝結構之剖面圖,圖3B為沿圖2之B-B直線之封裝結構之剖面圖。 圖3C為本揭露之一種封裝結構與電路板結合之立體示意圖,圖3D為沿圖3C之A-A直線之封裝結構之剖面圖。 圖4A為本揭露之一種晶片及光學模組之仰視圖,圖4B為本揭露之一種晶片及光學模組之側視圖。 圖5A為本揭露之另一種封裝結構之示意圖,圖5B為如圖5A之封裝結構與光波導連接組件之連接方式之示意圖。 圖6A為本揭露之另一種基板之示意圖,圖6B為本揭露之另一種封裝結構之示意圖。 圖7為本揭露之另一種封裝結構之示意圖。 圖8為本揭露之另一種封裝結構之示意圖。 圖9為本揭露之另一種封裝結構之示意圖。 圖10A~圖10F為本揭露之一種如圖5A及圖5B之封裝結構之製造流程示意圖。A more complete understanding of the disclosure of the present application can be obtained by referring to the detailed description and the claims in conjunction with the drawings, where the same reference numerals refer to the same elements. FIG. 1 is a schematic diagram of a conventional packaging structure. FIG. 2 is a three-dimensional schematic diagram of a package structure according to the disclosure. 3A is a cross-sectional view of the package structure along the line A-A in FIG. 2 , and FIG. 3B is a cross-sectional view of the package structure along the line B-B in FIG. 2 . FIG. 3C is a three-dimensional schematic view of a package structure combined with a circuit board according to the disclosure, and FIG. 3D is a cross-sectional view of the package structure along the line A-A of FIG. 3C . 4A is a bottom view of a chip and an optical module according to the disclosure, and FIG. 4B is a side view of a chip and an optical module according to the disclosure. FIG. 5A is a schematic diagram of another packaging structure of the disclosure, and FIG. 5B is a schematic diagram of a connection manner of the packaging structure of FIG. 5A and the optical waveguide connecting element. FIG. 6A is a schematic diagram of another substrate of the disclosure, and FIG. 6B is a schematic diagram of another packaging structure of the disclosure. FIG. 7 is a schematic diagram of another packaging structure of the disclosure. FIG. 8 is a schematic diagram of another packaging structure of the disclosure. FIG. 9 is a schematic diagram of another packaging structure of the disclosure. 10A to 10F are schematic diagrams of a manufacturing process of the package structure shown in FIGS. 5A and 5B according to the disclosure.
2:封裝結構2: Package structure
200:基板200: Substrate
210:晶片210: Wafer
220:光學模組220: Optical Module
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US8231284B2 (en) * | 2007-03-26 | 2012-07-31 | International Business Machines Corporation | Ultra-high bandwidth, multiple-channel full-duplex, single-chip CMOS optical transceiver |
US20180081118A1 (en) * | 2014-07-14 | 2018-03-22 | Biond Photonics Inc. | Photonic integration by flip-chip bonding and spot-size conversion |
US20170207600A1 (en) * | 2014-07-14 | 2017-07-20 | Biond Photonics Inc. | 3d photonic integration with light coupling elements |
US10001611B2 (en) * | 2016-03-04 | 2018-06-19 | Inphi Corporation | Optical transceiver by FOWLP and DoP multichip integration |
US10598860B2 (en) * | 2018-03-14 | 2020-03-24 | Globalfoundries Inc. | Photonic die fan out package with edge fiber coupling interface and related methods |
-
2020
- 2020-08-11 TW TW109127242A patent/TWI802812B/en active
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TWI802812B (en) | 2023-05-21 |
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