TW202202601A - 電子裝置 - Google Patents
電子裝置 Download PDFInfo
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- TW202202601A TW202202601A TW110107164A TW110107164A TW202202601A TW 202202601 A TW202202601 A TW 202202601A TW 110107164 A TW110107164 A TW 110107164A TW 110107164 A TW110107164 A TW 110107164A TW 202202601 A TW202202601 A TW 202202601A
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- 229920000642 polymer Polymers 0.000 claims abstract description 91
- 239000000203 mixture Substances 0.000 claims abstract description 66
- 239000000758 substrate Substances 0.000 claims abstract description 36
- 229920000106 Liquid crystal polymer Polymers 0.000 claims abstract description 18
- -1 aromatic hydroxycarboxylic acids Chemical class 0.000 claims description 45
- 239000004977 Liquid-crystal polymers (LCPs) Substances 0.000 claims description 15
- 239000011256 inorganic filler Substances 0.000 claims description 15
- 229910003475 inorganic filler Inorganic materials 0.000 claims description 15
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- FJKROLUGYXJWQN-UHFFFAOYSA-N 4-hydroxybenzoic acid Chemical compound OC(=O)C1=CC=C(O)C=C1 FJKROLUGYXJWQN-UHFFFAOYSA-N 0.000 claims description 8
- 229910052751 metal Inorganic materials 0.000 claims description 7
- 239000002184 metal Substances 0.000 claims description 7
- QIGBRXMKCJKVMJ-UHFFFAOYSA-N Hydroquinone Chemical compound OC1=CC=C(O)C=C1 QIGBRXMKCJKVMJ-UHFFFAOYSA-N 0.000 claims description 6
- KKEYFWRCBNTPAC-UHFFFAOYSA-N Terephthalic acid Chemical compound OC(=O)C1=CC=C(C(O)=O)C=C1 KKEYFWRCBNTPAC-UHFFFAOYSA-N 0.000 claims description 6
- BVKZGUZCCUSVTD-UHFFFAOYSA-N carbonic acid Chemical compound OC(O)=O BVKZGUZCCUSVTD-UHFFFAOYSA-N 0.000 claims description 6
- 229910052500 inorganic mineral Inorganic materials 0.000 claims description 6
- QQVIHTHCMHWDBS-UHFFFAOYSA-N isophthalic acid Chemical compound OC(=O)C1=CC=CC(C(O)=O)=C1 QQVIHTHCMHWDBS-UHFFFAOYSA-N 0.000 claims description 6
- 239000011707 mineral Substances 0.000 claims description 6
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- PLIKAWJENQZMHA-UHFFFAOYSA-N 4-aminophenol Chemical group NC1=CC=C(O)C=C1 PLIKAWJENQZMHA-UHFFFAOYSA-N 0.000 claims description 4
- 229940090248 4-hydroxybenzoic acid Drugs 0.000 claims description 4
- KAUQJMHLAFIZDU-UHFFFAOYSA-N 6-Hydroxy-2-naphthoic acid Chemical compound C1=C(O)C=CC2=CC(C(=O)O)=CC=C21 KAUQJMHLAFIZDU-UHFFFAOYSA-N 0.000 claims description 4
- VCCBEIPGXKNHFW-UHFFFAOYSA-N biphenyl-4,4'-diol Chemical compound C1=CC(O)=CC=C1C1=CC=C(O)C=C1 VCCBEIPGXKNHFW-UHFFFAOYSA-N 0.000 claims description 4
- RXOHFPCZGPKIRD-UHFFFAOYSA-N naphthalene-2,6-dicarboxylic acid Chemical compound C1=C(C(O)=O)C=CC2=CC(C(=O)O)=CC=C21 RXOHFPCZGPKIRD-UHFFFAOYSA-N 0.000 claims description 4
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- HQKMJHAJHXVSDF-UHFFFAOYSA-L magnesium stearate Chemical compound [Mg+2].CCCCCCCCCCCCCCCCCC([O-])=O.CCCCCCCCCCCCCCCCCC([O-])=O HQKMJHAJHXVSDF-UHFFFAOYSA-L 0.000 description 2
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- XINVQTBVVRMNHZ-UHFFFAOYSA-N 3-[1-(3-carboxyphenyl)ethyl]benzoic acid Chemical compound C=1C=CC(C(O)=O)=CC=1C(C)C1=CC=CC(C(O)=O)=C1 XINVQTBVVRMNHZ-UHFFFAOYSA-N 0.000 description 1
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Abstract
提供一種電子裝置。該裝置包含單一化載體部分、模製於該單一化載體部分上之基板及安置於該基板上之導電跡線。該基板包含聚合物組合物,該聚合物組合物包括熱致性液晶聚合物、無機填料,其中如根據ASTM E1461-13所測定,該聚合物組合物展現約1 W/m-K或更大之平面內熱導率。
Description
模製互連裝置(「IMD」)為通常包括塑膠組件及電子電路跡線之三維機電部件。創造塑膠基板或殼體,且將電路及裝置鍍覆、分層或植入於塑膠基板上。MID通常比習知產生之裝置具有更少部件,從而節省空間及重量。不管此等裝置之益處如何,仍需要可以用於較小空間中且可以以較高速度操作,同時使用較少功率且製造成本相對較低之電子封裝。已開發以有助於解決此等問題之一種技術稱為「特殊應用電子封裝(「ASEP」)。此類封裝系統使得能夠藉由依靠使用經模製於單一化載體部分上之經鍍覆塑膠基板而使用捲盤式(連續流)製造製程來製造產品。不利的係,此等系統之侷限性中之一者為用於塑膠基板之聚合材料不易於用導電電路跡線鍍覆且通常亦不具有所需程度之熱導率及機械強度。因此,當前需要一種改良之封裝電子裝置,其由具有導電電路跡線之塑膠基板形成。
根據本發明之一個實施例,揭示一種電子裝置,其包含單一化載體部分、模製於該單一化載體部分上之基板及安置於基板上之導電跡線。基板包含聚合物組合物,該聚合物組合物包括熱致性液晶聚合物、無機填料。如根據ASTM E1461-13所測定,聚合物組合物展現約1 W/m-K或更大之平面內熱導率。
下文中更詳細地闡述本發明之其他特徵及態樣。
相關申請案之交互參照
本申請案主張美國臨時專利申請案系列第62/981,667號(申請日為2020年2月26日)、第62/981,681號(申請日為2020年2月26日)、第63/057,345號(申請日為2020年7月28日)、第63/057,349號(申請日為2020年7月28日)、第63/057,353號(申請日為2020年7月28日)及美國專利申請案系列第17/178,292號(申請日為2021年2月18日)、第17/178,295號(申請日為2021年2月18日)之申請權益,該等申請案以全文引用之方式併入本文中。
一般熟習此項技術者應理解,本論述僅為例示性實施例之描述,且並不意欲限制本發明之更廣態樣。
一般言之,本發明係針對電子裝置,諸如印刷電路板、撓性電路、連接器、熱管理特徵、EMI屏蔽、高電流導體、RFID設備、天線、無線電力裝置、感測器、MEMS設備、LED裝置、微處理器、記憶體裝置、ASIC、被動裝置、阻抗控制裝置、機電設備或其組合。電子裝置含有模製於單一化載體部分上且具有安置於其上之導電跡線的基板。特別地,基板含有液晶聚合物及無機填料。藉由選擇性地控制聚合物組合物之此等及其他組分之特定性質以及其相對濃度,本發明人已發現所得組合物可以實現高程度之熱導率,其允許基板能夠產生熱傳遞遠離電子裝置(例如LED模組)之某些部件的熱路徑。以此方式,可以快速地消除「熱點」且可以在使用期間降低總溫度。舉例而言,組合物可展現約1 W/m-K或更大,在一些實施例中約1.2 W/m-K或更大,在一些實施例中約1.5 W/m-K或更大,在一些實施例中約1.8 W/m-K或更大,且在一些實施例中,約2至約5 W/m-K之平面內熱導率,如根據ASTM E 1461-13所測定。組合物亦可展現約0.2 W/m-K或更大,在一些實施例中約0.3 W/m-K或更大,在一些實施例中約0.4 W/m-K或更大,且在一些實施例中,約0.5至約2 W/m-K之通面熱導率,如根據ASTM E 1461-13所測定。
特別地,已發現可以在不使用具有高度固有熱導率之習知材料的情況下達成此熱導率。舉例而言,聚合物組合物可通常不含具有固有熱導率為50 W/m-K或更大,在一些實施例中100 W/m-K或更大,且在一些實施例中,150 W/m-K或更大之填料。此等高固有導熱材料之實例可包括例如氮化硼、氮化鋁、氮化矽鎂、石墨(例如膨脹石墨)、碳化矽、碳奈米管、氧化鋅、氧化鎂、氧化鈹、氧化鋯、氧化釔、鋁粉末及銅粉末。儘管通常需要最小化此等高固有導熱材料之存在,但其在某些實施例中可以相對較小百分比存在,諸如以聚合物組合物之約10 wt.%或更小,在一些實施例中約5 wt.%或更小,且在一些實施例中,約0.01 wt.%至約2 wt.%之量存在。
此外,習知地咸信具有高熱導率之組合物亦可不具有足夠良好的機械特性。然而,與習知思想相反,本發明人已發現,經由謹慎控制所採用之特定材料(例如聚合物基質、無機填料等之性質)及其加工方式,由聚合物組合物形成之電子裝置仍可以具有極佳機械特性。舉例而言,組合物可展現約10 kJ/m2
,在一些實施例中約15至約60 kJ/m2
,且在一些實施例中,約20至約50 kJ/m2
之夏比(Charpy)無缺口及/或缺口衝擊強度,其根據ISO測試第179-1:2010號在23℃下量測。組合物亦可展現約20至約500 MPa,在一些實施例中約50至約400 MPa,且在一些實施例中約60至約350 MPa之拉伸強度;約0.5%或更大,在一些實施例中約0.8%至約15%,且在一些實施例中,約1%至約10%之拉伸斷裂張力;及/或約5,000 MPa至約30,000 MPa,在一些實施例中約7,000 MPa至約25,000 MPa,且在一些實施例中,約10,000 MPa至約20,000 MPa之拉伸模數。拉伸特性可在23℃下根據ISO測試第527:2019號測定。組合物亦可展現約40至約500 MPa,在一些實施例中約50至約400 MPa,且在一些實施例中,約100至約350 MPa之撓曲強度;約0.5%或更大,在一些實施例中約0.8%至約15%,且在一些實施例中,約1%至約10%之撓曲斷裂張力;及/或約7,000 MPa或更大,在一些實施例中約9,000 MPa或更大,且在一些實施例中,約10,000 MPa至約30,000 MPa,且在一些實施例中,約12,000 MPa至約25,000 MPa之撓曲模數。撓曲特性可在23℃下根據ISO測試第178:2019號測定。組合物亦可展現約180℃或更高,且在一些實施例中,約190℃至約280℃之在負荷下之偏轉溫度(DTUL),如根據ASTM D648-07 (技術上等效於ISO測試第75-2:2013號)在1.8 MPa之指定負荷下量測。
現將更詳細描述本發明之各種實施例。
I.聚合物組合物
A.聚合物基質
聚合物基質通常含有一或多種液晶聚合物,其通常呈聚合物組合物之約30 wt.%至約80 wt.%,在一些實施例中約40 wt.%至約75 wt.%,且在一些實施例中,約50 wt.%至約70 wt.%之量。液晶聚合物通常經分類為「熱致性」至其可以在其熔融狀態(例如熱致性向列型狀態)中具有棒狀結構且呈現結晶形狀態之程度。聚合物具有相對高熔融溫度,諸如約280℃至約400℃,在一些實施例中約290℃至約390℃,且在一些實施例中,約300℃至約380℃。此等聚合物可由如此項技術中已知之一或多種類型之重複單元形成。舉例而言,液晶聚合物可含有一或多個通常由下式(I)表示之芳族酯重複單元:
其中,
環B為經取代或未經取代之6員芳基(例如1,4-伸苯基或1,3-伸苯基)、稠合至經取代或未經取代之5或6員芳基的經取代或未經取代之6員芳基(例如2,6-萘)或鍵聯至經取代或未經取代之5或6員芳基的經取代或未經取代之6員芳基(例如4,4-聯伸二苯);且
Y1
及Y2
獨立地為O、C(O)、NH、C(O)HN或NHC(O)。
通常,Y1
及Y2
中之至少一者為C(O)。此等芳族酯重複單元之實例可包括(舉例而言)芳族二羧基重複單元(式I中之Y1
及Y2
為C(O))、芳族羥基羧酸重複單元(式I中之Y1
為O且Y2
為C(O))以及其各種組合。
舉例而言,可採用芳族羥基羧酸重複單元,其衍生自芳族羥基羧酸,諸如4-羥基苯甲酸;4-羥基-4'-二苯基羧酸;2-羥基-6-萘甲酸;2-羥基-5-萘甲酸;3-羥基-2-萘甲酸;2-羥基-3-萘甲酸;4'-羥苯基-4-苯甲酸;3'-羥苯基-4-苯甲酸;4'-羥苯基-3-苯甲酸等以及其烷基、烷氧基、芳基及鹵素取代基,及其組合。特定言之,適合的芳族羥基羧酸為4-羥基苯甲酸(「HBA」)及6-羥基-2-萘甲酸(「HNA」)。在使用時,衍生自羥基羧酸(例如HBA及/或HNA)之重複單元通常佔聚合物之約40 mol.%或更多,在一些實施例中約45 mol.%或更多,且在一些實施例中,約50 mol.%至100 mol.%。在一個實施例中,舉例而言,衍生自HBA之重複單元可佔聚合物之約30 mol.%至約90 mol.%,在一些實施例中佔聚合物之約40 mol.%至約85 mol.%,且在一些實施例中,佔聚合物之約50 mol.%至約80 mol.%。衍生自HNA之重複單元可同樣地佔聚合物之約1 mol.%至約30 mol.%之聚合物,在一些實施例中約2 mol.%至約25 mol.%之聚合物,且在一些實施例中,約3 mol.%至約15 mol.%。
亦可採用芳族二羧酸重複單元,其衍生自芳族二羧酸,諸如對苯二甲酸、間苯二甲酸、2,6-萘二甲酸、二苯醚-4,4'-二甲酸、1,6-萘二甲酸、2,7-萘二甲酸、4,4'-二羧基聯苯、雙(4-羧苯基)醚、雙(4-羧苯基)丁烷、雙(4-羧苯基)乙烷、雙(3-羧苯基)醚、雙(3-羧苯基)乙烷等,以及其烷基、烷氧基、芳基及鹵素取代基,及其組合。特定言之,適合的芳族二羧酸可包括例如對苯二甲酸(「TA」)、間苯二甲酸(「IA」)及2,6-萘二甲酸(「NDA」)。當採用時,衍生自芳族二羧酸(例如,IA、TA及/或NDA)之重複單元通常佔聚合物之約1 mol.%至約50 mol.%,在一些實施例中約2 mol.%至約40 mol.%,且在一些實施例中,約5 mol.%至約30%。
其他重複單元亦可用於聚合物中。舉例而言,在某些實施例中,可使用衍生自芳族二醇,諸如對苯二酚、間苯二酚、2,6-二羥基萘、2,7-二羥基萘、1,6-二羥基萘、4,4'-二羥基聯苯(或4,4'-聯苯酚)、3,3'-二羥基聯苯、3,4'-二羥基聯苯、4,4'-二羥基聯苯醚、雙(4-羥苯基)乙烷等,以及其烷基、烷氧基、芳基及鹵素取代基及其組合之重複單元。舉例而言,尤其適合的芳族二醇可包括對苯二酚(「HQ」)及4,4'-聯苯酚(「BP」)。在使用時,衍生自芳族二醇(例如,HQ及/或BP)之重複單元通常佔聚合物之約1 mol.%至約30 mol.%、在一些實施例中約2 mol.%至約25 mol.%,且在一些實施例中,約5 mol.%至約20%。亦可使用諸如衍生自芳族醯胺(例如乙醯胺苯酚(「APAP」))及/或芳胺(例如4-胺基苯酚(「AP」)、3-胺基苯酚、1,4-苯二胺、1,3-苯二胺等)之彼等重複單元。在使用時,衍生自芳族醯胺(例如,APAP)及/或芳胺(例如,AP)之重複單元通常佔聚合物之約0.1 mol.%至約20 mol.%、在一些實施例中約0.5 mol.%至約15 mol.%,且在一些實施例中,約1 mol.%至約10%。亦應理解各種其他單體重複單元可併入至聚合物中。舉例而言,在某些實施例中,聚合物可含有一或多個衍生自非芳族單體(諸如脂族或環脂族羥基羧酸、二羧酸、二醇、醯胺、胺等)之重複單元。當然,在其他實施例中,由於其缺乏衍生自非芳族(例如,脂族或環脂族)單體之重複單元,所以聚合物可為「完全芳族」。
儘管未必需要,但液晶聚合物可為「低環烷」聚合物至其含有極少含量之衍生自環烷羥基羧酸及環烷二羧酸(諸如萘-2,6-二甲酸(「NDA」)、6-羥基-2-萘甲酸(「HNA」)或其組合)之重複單元的程度。亦即,衍生自環烷羥基羧酸及/或二羧酸(例如,NDA、HNA,或HNA及NDA之組合)之重複單元的總量通常為約15 mol.%或更小,在一些實施例中約10 mol.%或更小,且在一些實施例中,約1 mol.%至約8 mol.%之聚合物。
B.無機填料
如上文所指示,聚合物組合物亦可含有分佈於聚合物基質內之一或多種無機填料。此等無機填料通常每100重量份佔聚合物基質之約10至約80重量份,在一些實施例中約20至約70重量份,且在一些實施例中,約30至約60重量份。無機填料可(舉例而言)佔聚合物組合物之約5 wt.%至約60 wt.%,在一些實施例中約10 wt.%至約55 wt.%,且在一些實施例中,約25 wt.%至約40 wt.%。此外,無機填料與導電填料之重量比可介於約2至約500範圍內,在一些實施例中約3至約150範圍內,在一些實施例中約4至約75範圍內,且在一些實施例中,約5至約15範圍內。藉由選擇性地調適無機填料之類型及相對量,本發明人不僅已發現機械特性可以得到改良,而且可以增加熱導率而不顯著地影響聚合物組合物之總體導電率。此允許組合物能夠產生熱路徑以用於熱傳遞遠離所得電子裝置,從而使得可以快速地消除「熱點」且在使用期間可以降低總體溫度。舉例而言,組合物可例如展現約0.2 W/m-K或更大,在一些實施例中約0.5 W/m-K或更大,在一些實施例中約0.6 W/m-K或更大,在一些實施例中約0.8 W/m-K或更大,且在一些實施例中,約1至約3.5 W/m-K之平面內熱導率,如根據ASTM E 1461-13所測定。組合物亦可展現約0.3 W/m-K或更大,在一些實施例中約0.5 W/m-K或更大,在一些實施例中約0.40 W/m-K或更大,且在一些實施例中,約0.7至約2 W/m-K之通面熱導率,如根據ASTM E 1461-13所測定。
聚合物組合物中採用之無機填料之性質可不同,諸如礦物粒子、礦物纖維(或「晶鬚」)等,以及其摻合物。舉例而言,適合的礦物纖維可包括衍生自矽酸鹽,諸如島狀矽酸鹽、雙島狀矽酸鹽、鏈狀矽酸鹽(例如鏈狀矽酸鈣,諸如矽灰石;鏈狀矽酸鈣鎂,諸如透閃石(tremolite);鏈狀矽酸鈣鎂鐵,諸如陽起石(actinolite);鏈狀矽酸鎂鐵,諸如直閃石(anthophyllite)等)、頁矽酸鹽(例如頁矽酸鋁,諸如鎂鋁皮石(palygorskite))、網狀矽酸鹽等;硫酸鹽,諸如硫酸鈣(例如脫水或無水石膏);礦棉(例如石棉或礦渣棉)等等。尤其適合為鏈狀矽酸鹽,獲自Nyco Minerals商標名為NYGLOS® (例如,NYGLOS® 4W或NYGLOS® 8)之矽灰石纖維。礦物纖維可具有約1至約35微米,在一些實施例中約2至約20微米,在一些實施例中約3至約15微米,且在一些實施例中,約8至約14微米之中值寬度(例如,直徑)。礦物纖維亦可具有狹小粒度分佈。也就是說,至少約60體積%之纖維,在一些實施例中至少約70體積%之纖維,且在一些實施例中,至少約80體積%之纖維可具有在上文提及之範圍內的尺寸。不意欲受理論限制,咸信具有上述尺寸特徵之礦物纖維可以更易於移動穿過模製設備,其增強聚合物基質內之分佈且使表面缺陷之產生減至最少。除具有上文提及之尺寸特徵之外,礦物纖維亦可具有相對較高縱橫比(平均長度除以中值寬度)以幫助進一步改良所得聚合物組合物之機械特性及表面品質。舉例而言,礦物纖維可具有約1.1至約100,在一些實施例中約1.2至約50,在一些實施例中約1.5至約20,且在一些實施例中,約2至約8之縱橫比。此等礦物纖維之體積平均長度可(例如)介於約1至約200微米之範圍內,在一些實施例中約2至約150微米,在一些實施例中約5至約100微米,且在一些實施例中,約10至約50微米。
其他適合的無機填料為礦物粒子。粒子之平均直徑可例如介於約5微米至約200微米之範圍內,在一些實施例中約8微米至約150微米,且在一些實施例中,約10微米至約100微米。粒子之形狀可視需要變化,諸如顆粒狀、薄片狀等。舉例而言,可採用具有相對高縱橫比(例如,平均直徑除以平均厚度)之薄片狀粒子,諸如約4或更大,在一些實施例中約8或更大,且在一些實施例中,約10至約500。此等薄片狀粒子之平均厚度可同樣為約2微米或更小,在一些實施例中約5奈米至約1微米,且在一些實施例中,約20奈米至約500奈米。與其形狀及尺寸無關,粒子通常由天然及/或合成矽酸鹽礦物形成,諸如滑石、雲母、埃洛石、高嶺石、伊利石、蒙脫石、蛭石、鎂鋁皮石、葉蠟石、焦石棉、矽酸鈣、矽酸鋁、矽灰石等。滑石及雲母尤其適合。通常可採用任何形式之雲母,包括(舉例而言)白雲母(KAl2
(AlSi3
)O10
(OH)2
)、黑雲母(K(Mg,Fe)3
(AlSi3
)O10
(OH)2
)、金雲母(KMg3
(AlSi3
)O10
(OH)2
)、鋰雲母(K(Li,Al)2 - 3
(AlSi3
)O10
(OH)2
),海綠石(K,Na)(Al,Mg,Fe)2
(Si,Al)4
O10
(OH)2
)等。基於白雲母之雲母尤其適用於聚合物組合物。
C.視情況選用之組分
聚合物組合物中亦可以包括廣泛多種其他添加劑,諸如玻璃纖維、抗衝擊改質劑、潤滑劑、色素(例如碳黑)、抗氧化劑、穩定劑、界面活性劑、蠟、阻燃劑、抗滴添加劑、成核劑(例如氮化硼)、導電填料及其他經添加以增強特性及可加工性之材料。潤滑劑例如可以聚合物組合物之約0.05 wt.%至約1.5 wt.%,且在一些實施例中,約0.1 w.t%至約0.5 wt.%(按重量計)之量用於聚合物組合物中。此類潤滑劑之實例包括脂肪酸酯、其鹽、酯、脂肪酸醯胺、有機磷酸酯及通常用作加工工程塑膠材料之潤滑劑之類型的烴蠟,包括其混合物。適合的脂肪酸通常具有約12至約60個碳原子之主鏈碳鏈,諸如肉豆蔻酸、棕櫚酸、硬脂酸、花生酸、二十八酸、十八烷酸、十八碳四烯酸(parinric acid)等。適合的酯包括脂肪酸酯、脂肪醇酯、蠟酯、甘油酯、乙二醇酯及複合酯。脂肪酸醯胺包括脂肪一級醯胺、脂肪二級醯胺、亞甲基及伸乙基雙醯胺及烷醇醯胺,諸如棕櫚酸醯胺、硬脂酸醯胺、油酸醯胺、N,N'-亞乙基雙硬脂醯胺等。脂肪酸之金屬鹽亦為合適的,諸如硬脂酸鈣、硬脂酸鋅、硬脂酸鎂等;烴蠟,包括石蠟、聚烯烴及氧化聚烯烴蠟及微晶蠟。尤其適合的潤滑劑為硬脂酸之酸、鹽或醯胺,諸如新戊四醇四硬脂酸酯、硬脂酸鈣或N,N'-亞乙基雙硬脂醯胺。又一適合的潤滑劑可為改良內部潤滑且亦有助於促進組合物遇到另一表面之磨損及摩擦特性之矽氧烷聚合物。此等矽氧烷聚合物通常每100份組合物中所採用之聚合物基質佔約0.2至約20份,在一些實施例中約0.5至約10份,且在一些實施例中,約0.8至約5份。通常可採用各種矽氧烷聚合物中之任一者。舉例而言,矽氧烷聚合物可涵蓋在具有下式之主鏈中包括矽氧烷單元之任何聚合物、共聚物或寡聚物:
Rr
SiO(4-r/2)
其中
R獨立地為氫或經取代或未經取代之烴基,且
r為0、1、2或3。
舉例而言,適合的基團R之一些實例包括烷基、芳基、烷芳基、烯基或炔基,或環烷基,其視情況經取代,且其可間雜有雜原子,亦即可在碳鏈或環中含有雜原子。舉例而言,適合的烷基可包括甲基、乙基、正丙基、異丙基、正丁基、異丁基、三級丁基、正戊基、異戊基、新戊基及三級戊基、己基(例如正己基)、庚基(例如正庚基)、辛基(例如正辛基)、異辛基(例如2,2,4-三甲基戊基)、壬基(例如正壬基)、癸基(例如正癸基)、十二烷基(例如正十二烷基)、十八基(例如正十八基)等。同樣,適合的環烷基可包括環戊基、環己基、環庚基、甲基環己基等;適合的芳基可包括苯基、聯苯基、萘基、蒽基及菲基;適合的烷芳基可包括鄰、間或對甲苯基、二甲苯基、乙基苯基等;且適合的烯基或炔基可包括乙烯基、1-丙烯基、1-丁烯基、1-戊烯基、5-己烯基、丁二烯基、己二烯基、環戊烯基、環戊二烯基、環己烯基、乙炔基、炔丙基、1-丙炔基等。經取代之烴基之實例為鹵化烷基(例如3-氯丙基、3,3,3-三氟丙基及全氟己基乙基)及鹵化芳基(例如對氯苯基及對氯苄基)。在一個特定實施例中,矽氧烷聚合物包括鍵結至至少70 mol%之Si原子之烷基(例如甲基)及視情況存在之鍵結至0.001至30 mol%之Si原子之乙烯基及/或苯基。矽氧烷聚合物亦較佳主要由二有機矽氧烷單元組成。聚有機矽氧烷之端基可為三烷基矽烷氧基,尤其三甲基矽烷氧基或二甲基乙烯基矽烷氧基。然而,此等烷基中之一或多者亦有可能已經羥基或烷氧基,諸如甲氧基或乙氧基置換。矽氧烷聚合物之尤其適合的實例包括(舉例而言)二甲基聚矽氧烷、苯甲基聚矽氧烷、乙烯基甲基聚矽氧烷及三氟丙基聚矽氧烷。
矽氧烷聚合物亦可在聚合物之矽氧烷單體單元之至少一部分上包括反應性官能基,諸如乙烯基、羥基、氫化物、異氰酸酯基、環氧基、酸基、鹵素原子、烷氧基(例如甲氧基、乙氧基及丙氧基)、醯氧基(例如,乙醯氧基及辛醯氧基)、酮肟基(例如,二甲基酮肟、甲基酮肟及甲基乙基酮肟)、胺基(例如,二甲胺基、二乙胺基及丁胺基)、醯胺基(例如,N-甲基乙醯胺及N-乙基乙醯胺)、酸醯胺基、胺基-氧基、巰基、烯氧基(例如,乙烯基氧基、異丙烯基氧基及1-乙基-2-甲基乙烯基氧基)、烷氧基烷氧基(例如,甲氧基乙氧基、乙氧基乙氧基及甲氧基丙氧基)、胺氧基(例如,二甲基胺氧基及二乙基胺氧基)、巰基等中之一或多者。
與其特定結構無關,矽氧烷聚合物通常具有相對高分子量,其降低其遷移或擴散至聚合物組合物表面之可能性且因此進一步使相分離之可能性減至最小。舉例而言,矽氧烷聚合物通常具有約100,000公克/莫耳或更大,在一些實施例中約200,000公克/莫耳或更大,且在一些實施例中,約500,000公克/莫耳至約2,000,000公克/莫耳之重均分子量。矽氧烷聚合物亦可具有相對高運動黏度,諸如約10,000厘司(centistoke)或更大,在一些實施例中約30,000厘司或更大,且在一些實施例中,約50,000厘司至約500,000厘司。
必要時,二氧化矽粒子(例如煙霧狀二氧化矽)亦可與矽氧烷聚合物組合使用以幫助改良其分散於組合物內之能力。舉例而言,此等二氧化矽粒子可具有約5奈米至約50奈米之粒度、約50平方米/克(m2
/g)至約600 m2
/g之表面積,及/或約160千克/立方米(kg/m3
)至約190 kg/m3
之密度。當使用時,二氧化矽粒子通常基於100重量份矽氧烷聚合物佔約1至約100重量份,且在一些實施例中,約20至約60重量份。在一個實施例中,二氧化矽粒子可以與矽氧烷聚合物組合,然後將此混合物添加至聚合物組合物中。舉例而言,包括超高分子量聚二甲基矽氧烷及煙霧狀二氧化矽之混合物可以併入聚合物組合物中。此類預形成混合物可以Genioplast®
Pellet S形式由Wacker Chemie, AG獲得。
導電填料亦可用於聚合物組合物中以確保基板在本質上通常為抗靜電的,使得大量電流不流過部件。此類抗靜電行為可藉由針對具有所需電阻率之填料選擇單一材料或藉由將多個材料共同摻合(例如,絕緣及導電)以使得所得填料具有所需電阻來實現。舉例而言,可採用諸如在約20℃之溫度下所測定具有小於約1歐姆-公分,在一些實施例中約小於約0.1歐姆-公分,且在一些實施例中,約1×10- 8
至約1×10- 2
歐姆-公分之體積電阻率的導電碳材料。舉例而言,適合的導電碳材料可包括石墨、碳黑、碳纖維、石墨烯、碳奈米管等。其他適合的導電填料可同樣包括金屬(例如金屬粒子、金屬薄片、金屬纖維等)、離子液體等。當使用時,導電填料通常每100重量份聚合物基質佔約0.5至約20重量份,在一些實施例中約1至約15重量份,且在一些實施例中,約2至約8重量份。舉例而言,導電填料可佔聚合物組合物之約0.1 wt%至約10 wt%,在一些實施例中約0.2 wt%至約8 wt%,且在一些實施例中,約0.5 wt%至約6 wt%。所得抗靜電聚合物組合物可展現諸如根據IEC 62631-3-1:2016所測定約1×1018
歐姆或更小,在一些實施例中約1×1017
歐姆或更小,在一些實施例中約1×1016
歐姆或更小,在一些實施例中約1×1015
歐姆或更小,且在一些實施例中,約1×1014
歐姆或更小之表面電阻率,及/或約1×1016
歐姆-米或更小,在一些實施例中約1×1015
歐姆-米或更小,在一些實施例中約1×1014
歐姆-米或更小,且在一些實施例中,約1×1013
歐姆-米或更小之體積電阻率。當然,組合物不必為抗靜電,尤其在需要使組合物之整體熱導率最佳化時。在此類情況下,組合物可展現諸如根據IEC 62631-3-1:2016所測定約1×1014
歐姆或更大,在一些實施例中約1×1015
歐姆或更大,在一些實施例中約1×1016
歐姆或更大,在一些實施例中約1×1017
歐姆或更大,且在一些實施例中,約1×1018
歐姆或更大之表面電阻率,及/或約1×1013
歐姆-米或更大,在一些實施例中約1×1014
歐姆-米或更大,在一些實施例中約1×1015
歐姆-米或更大,且在一些實施例中,約1×1016
歐姆-米或更大之體積電阻率。
II.形成
聚合物組合物之組分(例如液晶聚合物、無機填料等)可經熔融處理或摻合在一起。組分可分別或以組合供應至包括至少一個可旋轉地安裝且接納於機筒(例如,圓柱形機筒)內之螺桿且可界定進料區及自進料區沿螺桿之長度定位於下游之熔融區的擠壓機。擠壓機可為單螺桿或雙螺桿擠壓機。可選擇螺桿之速度以獲得所需滯留時間、剪切率、熔融加工溫度等。舉例而言,螺桿速度可介於約每分鐘50至約800轉(「rpm」)之範圍內,在一些實施例中約70至約150 rpm,且在一些實施例中,約80至約120 rpm。在熔融摻合期間之明顯剪切率亦可介於約100秒- 1
至約10,000秒- 1
之範圍內,在一些實施例中約500秒- 1
至約5000秒- 1
,且在一些實施例中,約800秒- 1
至約1200秒- 1
。明顯剪切率等於4Q/πR3
,其中Q為聚合物熔融物之體積流量(「m3
/s」)且R為熔融聚合物流動通過之毛細管(例如,擠壓機壓模)的半徑(「m」)。不管形成其之特定方式,所得聚合物組合物可以具有極佳熱特性。舉例而言,聚合物組合物之熔融黏度可足夠低以使得其可以易於流入具有較小尺寸之模具的空腔中。在一個特定實施例中,聚合物組合物可具有在1,000秒- 1
之剪切率下測定之約10至約250 Pa-s之熔融黏度,在一些實施例中約15至約200 Pa-s,在一些實施例中約20至約150 Pa-s,且在一些實施例中,約30至約100 Pa-s。熔融黏度可根據ISO測試第11443:2014號在比組合物之熔融溫度高15℃之溫度(例如,對於約325℃之熔融溫度而言為約340℃)下測定。
III.電子裝置
如上文所指示,聚合物組合物用於模製於「單一化」載體部分上且具有鍍覆於其上之導電跡線的基板中。如本文所使用,術語「單一化」通常意謂載體部分已與較大載體(例如經結合或連續)分離。可使用多種不同技術形成基板。舉例而言,適合的技術可包括注射模製、低壓注射模製、擠壓壓縮模製、氣體注射模製、發泡體注射模製、低壓氣體注射模製、低壓發泡體注射模製、氣體擠壓壓縮模製、發泡體擠壓壓縮模製、擠壓模製、發泡體擠壓模製、壓縮模製、發泡體壓縮模製、氣體壓縮模製等。舉例而言,可採用包括可注射聚合物組合物之模具的注射模製系統。噴射器內部之時間可經控制及最佳化以使得聚合物基質不預先固化。當達到循環時間且機筒充滿排泄物時,活塞可用於將組合物注射至模具空腔。亦可採用壓縮模製系統。如同注射模製,將聚合物組合物成形為所需製品亦在模具內進行。可使用諸如藉由自動機器手臂拾取之任何已知技術將組合物置放於壓縮模具中。模具之溫度可維持在或高於聚合物基質之凝固溫度持續所需時段以允許凝固。隨後,模製產物可藉由將其引入至低於其熔融溫度之溫度固化。所得產物可經脫模。每一模製製程之循環時間可經調整以適合聚合物基質,以達成充分黏合且提高整體製程生產率。
圖1中展示可以用於形成本發明之電子裝置的製造製程之實施例的流程圖。如步驟1中所示,提供載體40,其含有臂56延伸以自其中形成引線框54之外部區域。如圖4中所示,舉例而言,載體40可自體源捲軸68a展開,且隨後收集於第二捲軸68b中。載體40通常由金屬(例如,銅或銅合金)或其他適合的導電材料形成。必要時,臂56亦可含有設置於其中之孔隙58。載體孔52可同樣位於載體40之外部上以允許其以連續方式沿著生產線橫向移動。在步驟2中,可由本發明之聚合物組合物形成之基板42此後可模製(例如,包覆模製)於引線框54上方。孔隙60可設置於基板42中,該孔隙對應於指狀物56中之孔隙58。
一旦基板42模製於引線框54上方,則可形成導電電路跡線。此等跡線可經由多種已知金屬沈積技術形成,諸如藉由鍍覆(例如,電鍍、無電極鍍覆等)、印刷(例如,數位印刷、氣溶膠噴射印刷等)等。必要時,晶種層可最初形成於基板上以促進金屬沈積製程。在圖1之步驟3及3A中,舉例而言,晶種層44可最初沈積於基板42之表面上,此允許由載體40形成之內部匯流條43電連接至晶種層44。晶種層44可隨後經金屬(例如,銅、鎳、金、銀、錫、鉛、鈀等)沈積以形成含有電子電路跡線62之部件46(步驟4)。在一個實施例中,舉例而言,電鍍可藉由向載體40施加電壓電位且其後置放於電鍍浴中進行。亦可以視情況將通孔模製於基板之表面中以在跡線與電路之內部層之間建立電通路。此等跡線建立至載體部分之「電匯流條」,其使得跡線能夠在塗覆沈積之導電膠之後鍍覆。必要時,基板表面可在使用多種已知技術(諸如雷射剝蝕、電漿蝕刻、紫外光處理、氟化等)鍍覆之前粗糙化。此外,此類粗糙化有助於在所需互連圖案中進行鍍覆。參考圖5,舉例而言,更詳細地說明出於此目的而使用雷射之製程的一個實施例。更特定言之,如步驟9中所展示,最初可使用雷射70以剝蝕基板42之表面以建立形成互連圖案66之通道72。在步驟10中,可隨後經由任何已知技術(諸如藉由噴墨製程、氣溶膠製程或網版印刷製程)將導電膠74安置於通道72內。或者,代替及/或除了使用膠以外,亦可採用鍍覆方法(例如,無電極鍍覆)。然而,當使用時,經沈積之膠74可視情況經由如步驟11中所說明之雷射或閃熱76燒結以幫助確保膠74充分黏附至基板42。一旦視情況燒結,則如步驟12中所展示鍍覆(例如,電鍍)膠74以形成電子電路跡線62。
再次參考圖1,一旦經鍍覆,便可藉由使用多種技術(諸如焊接、線黏合等)中之任一者將一或多個電子組件50連接至基板42(步驟6)而形成電子裝置。在某些實施例中,可視情況在連接組件50之前塗覆(步驟5)焊料遮罩48。所得電子裝置隨後可與載體40分離。舉例而言,圖2-3例示電子裝置22在其形成之各種階段期間的一個實施例。舉例而言,在步驟A處,在模製之前展示載體40。步驟B展示在其已模製於載體部分40上且與電子電路跡線62一起施加之後的基板42。在步驟C及步驟D處,可添加視情況選用之插腳觸點及電路金屬化以形成完整的電子裝置(步驟E)。如圖3中所例示,完整電子裝置22隨後可與鄰接載體40分離以形成含有單一化載體部分40之電子裝置22。所得電子裝置可含有各種類型之電子組件,諸如用於燈(例如,隧道燈、前燈等)或諸如電腦、電話、電子控制單元等中所使用之其他電子設備之光源(例如,發光二極體(「LED」))的殼體。此等產品可特別適用於載具(例如,汽車、公共汽車、摩托車、船等),諸如電動載具(EV)、混合電動載具(HEV)、插入式混合電動載具(PHEV)或使用電力推進之其他類型之載具(統稱為「電動載具」)。
參考圖7-8,舉例而言,展示呈用於汽車產品之燈20形式之電子產品的一個實施例。燈20包括殼體24、電子裝置22(亦參見圖2),及燈管28。如圖8中所示,殼體24可形成於兩個部件24a及24b中。殼體24具有壁32,經由壁32形成通道34,及延伸穿過壁32且與通道34連通之孔隙36。孔隙36可橫向於通道34。電子裝置22可安裝於殼體30之通道34內。燈管28延伸穿過殼體30中之孔隙36且安裝於發光二極體(LED) 38上方,該發光二極體經形成為如本文中所描述之電子裝置22的電子組件50中之一或多者。圖6提供用於形成燈20之代表性製程。舉例而言,步驟7及8展示電子裝置22自其他裝置單一化且與殼體24及燈管28一起裝配。在形成裝置22之後,其安裝於通道34內且殼體24之部件24a及24b裝配在一起。插腳觸點64保持暴露。燈管28經由孔隙36安裝於殼體24中且設置於LED 38上方。
參考以下實例可更好地理解本發明。測試方法
熔融黏度
:熔融黏度(Pa-s)可根據ISO測試第11443:2014號在1,000 s- 1
之剪切率及高於熔融溫度15℃之溫度下使用Dynisco LCR7001毛細管流變儀測定。流變儀孔(壓模)具有1 mm之直徑、20 mm之長度、20.1之L/D比率及180°之入口角。機筒之直徑為9.55 mm+0.005 mm,且棒之長度為233.4 mm。
熔融溫度
:熔融溫度(「Tm」)可藉由如此項技術中已知之差示掃描熱量測定(「DSC」)來測定。熔融溫度為如藉由ISO測試第11357-2:2018號所測定之差示掃描熱量測定(DSC)峰值熔融溫度。在DSC程序下,如ISO標準10350中所陳述使用在TA Q2000器具上進行之DSC量測來以每分鐘20℃加熱且冷卻樣品。
在負荷下之偏轉溫度 ( 「 DTUL 」 )
:在負荷下之偏轉溫度可根據ISO測試第75-2:2013號(技術上等效於ASTM D648)測定。更特定而言,可對具有80 mm之長度、10 mm之厚度及4 mm之寬度的測試條帶樣品進行沿邊三點彎曲測試,其中指定負荷(最大外部纖維應力)為1.8兆帕斯卡。試樣可降低至聚矽氧油槽中,其中溫度每分鐘升高2℃直至其偏轉0.25 mm (對於ISO測試第75-2:2013號為0.32 mm)。
拉伸模數、拉伸應力及拉伸伸長率
:可根據ISO測試第527:2019號(技術上等效於ASTM D638)來測試拉伸特性。可在具有80 mm之長度、10 mm之厚度及4 mm之寬度的相同測試條帶樣品上作出模數及強度量測。測試溫度可為23℃且測試速度可為1或5 mm/min。
撓曲模數、撓曲應力及撓曲伸長率
:可根據ISO測試第178:2019號(技術上等效於ASTM D790)來測試撓曲特性。可在64 mm支撐跨距上進行此測試。可在未切割之ISO 3167多用途桿體之中心部分上進行測試。測試溫度可為23℃且測試速度可為2 mm/min。
夏比無缺口及缺口衝擊強度
:可根據ISO測試第179-1:2010號(技術上等效於ASTM D256-10,方法B)來測試夏比特性。可使用1型試樣大小(80 mm之長度、10 mm之寬度及4 mm之厚度)進行此測試。當測試缺口衝擊強度時,缺口可為A型缺口(0.25 mm基圓半徑)。可使用單齒銑床自多用途桿體之中心切割試樣。測試溫度可為23℃。
表面 / 體積電阻率
:表面及體積電阻率值通常根據IEC 62631-3-1:2016或ASTM D257-14測定。根據此程序,將標準試樣(例如,1米立方體)置放於兩個電極之間。施加電壓六十(60)秒且量測電阻。表面電阻率為電位梯度(以V/m為單位)與每單位電極長度之電流(以A/m為單位)之商,且通常表示洩漏電流沿絕緣材料之表面的電阻。因為電極之四(4)端界定正方形,所以商中之長度抵消且表面電阻率以歐姆報導,儘管看見歐姆/平方之更描述性單元亦為常見的。體積電阻率亦經測定為平行於材料中之電流的電位梯度與電流密度之比率。在SI單元中,體積電阻率與材料之一米立方體之相對面之間的直流電阻(歐姆-米)數值上相等。實例
形成樣品以供用於如本文中所描述之電子裝置的基板中。樣品含有液晶聚合物(「LCP 1」)、Nyglos™ 8、碳黑顏料及Glycolube™ P。LCP 1由60 mol.% HBA、5 mol.% HNA、12% mol.% BP、17.5 mol.% TA及5 mol.% APAP形成。使用18-mm單螺桿擠壓機進行混合。將該等樣品注射模製為薄片(60 mm x 60 mm)。表 1
樣品 | Wt.% |
LCP 1 | 67.2 |
矽灰石纖維 | 30 |
碳黑顏料 | 2.5 |
潤滑劑 | 0.3 |
測試所得樣品之熱及機械特性。結果闡述於下文表2中。表 2
樣品之特性 | |
平面內熱導率(W/m-K) | 2.5 |
通面熱導率(W/m-K) | 0.6 |
表面電阻率(歐姆) | > 1 x 1014 |
體積電阻率(歐姆-米) | > 1 x 1013 |
夏比缺口(kJ/m2 ) | 10 |
夏比無缺口(kJ/m2 ) | 29 |
拉伸強度(MPa) | 143 |
拉伸模數(MPa) | 14,000 |
拉伸伸長率(%) | 2.7 |
撓曲強度(MPa) | 160 |
撓曲模數(MPa) | 13,000 |
熔融溫度(℃,DSC之第1次加熱) | 330 |
DTUL (1.8 MPa,℃) | 240 |
本發明之此等及其他修改及變化可在不脫離本發明之精神及範疇的情況下藉由一般熟習此項技術者實踐。此外,應理解各種實施例之態樣可整體地或部分地兩者互換。此外,一般熟習此項技術者之彼等應瞭解先前描述僅借助於實例,且不意欲限制進一步描述於此等所附申請專利範圍中之本發明。
1:步驟
2:步驟
3:步驟
3A:步驟
4:步驟
5:步驟
6:步驟
7:步驟
8:步驟
9:步驟
10:步驟
11:步驟
12:步驟
20:燈
22:電子裝置
24:殼體
24a:部件
24b:部件
28:燈管
32:壁
34:通道
36:孔隙
38:發光二極體
40:載體
42:基板
43:內部匯流條
44:晶種層
46:部件
48:焊料遮罩
50:電子組件
52:載體孔
54:引線框
56:臂
58:孔隙
60:孔隙
62:電子電路跡線
64:插腳觸點
66:互連圖案
68a:體源捲軸
68b:第二捲軸
70:雷射
72:通道
74:導電膠
76:雷射或閃熱
A:步驟
B:步驟
C:步驟
D:步驟
E:步驟
本發明之完整及能夠實現之揭示,包括對熟習此項技術者而言其最佳模式,更尤其闡述於本說明書之剩餘部分,包括參考附圖,其中:
圖1為可用以形成本發明之電子裝置的製造製程之一個實施例的流程圖;
圖2為展示於圖1中之製造製程的透視圖,其中在電子裝置形成期間在載體上之各種階段處展示基板;
圖3為展示於圖2中之自該載體分離之後的電子裝置的透視圖;
圖4為可在展示於圖1中之製造製程中使用的捲盤式載體之一個實施例的透視圖;
圖5為用於在基板上形成電路跡線之一個實施例的示意圖;
圖6為展示可以用於圖1之製造製程中之額外步驟的流程圖;
圖7為呈汽車燈形式之本發明之電子裝置的一個實施例的透視圖;且
圖8為展示於圖7中之電子裝置的分解透視圖。
1:步驟
2:步驟
3:步驟
3A:步驟
4:步驟
5:步驟
6:步驟
40:載體
42:基板
43:內部匯流條
44:晶種層
46:部件
48:焊料遮罩
50:電子組件
52:載體孔
54:引線框
56:臂
58:孔隙
60:孔隙
62:電子電路跡線
Claims (18)
- 一種電子裝置,其包含: 單一化載體部分; 模製於該單一化載體部分上之基板,其中該基板包含聚合物組合物,該聚合物組合物包括熱致性液晶聚合物、無機填料,其中如根據ASTM E1461-13所測定,該聚合物組合物展現約1 W/m-K或更大之平面內熱導率;及 安置於該基板上之導電跡線。
- 如請求項1之電子裝置,其中如根據IEC 62631-3-1:2016所測定,該聚合物組合物展現約1×1013 歐姆或更大之表面電阻率。
- 如請求項1之電子裝置,其中該聚合物基質占該聚合物組合物之約30 wt.%至約80 wt.%。
- 如請求項1之電子裝置,其中該液晶聚合物具有約280℃或更高之熔融溫度。
- 如請求項4之電子裝置,其中該液晶聚合物含有一或多個衍生自芳族羥基羧酸之重複單元,其中該等羥基羧酸重複單元占該聚合物之約40 mol.%或更多。
- 如請求項5之電子裝置,其中該液晶聚合物含有衍生自4-羥苯甲酸、6-羥基-2-萘甲酸或其組合之重複單元。
- 如請求項5之電子裝置,其中該液晶聚合物含有占該聚合物約30 mol.%至約90 mol.%之量的衍生自4-羥苯甲酸之重複單元,且含有占該聚合物約1 mol.%至約30 mol.%之量的衍生自6-羥基-2-萘甲酸之重複單元。
- 如請求項5之電子裝置,其中該液晶聚合物進一步含有衍生自對苯二甲酸、間苯二甲酸、2,6-萘二甲酸、對苯二酚、4,4'-聯苯酚、乙醯胺苯酚、4-胺基苯酚或其組合之重複單元。
- 如請求項1之電子裝置,其中如根據ASTM E1461-13所測定,該聚合物組合物展現約0.2 W/m-K或更大之通面熱導率。
- 如請求項1之電子裝置,其中該無機填料以每100重量份之該聚合物基質約10至約80重量份的量存在於該聚合物組合物中。
- 如請求項10之電子裝置,其中該無機填料含有礦物粒子、礦物纖維或其組合。
- 如請求項11之電子裝置,其中該等礦物粒子包括滑石、雲母或其組合。
- 如請求項11之電子裝置,其中該等礦物纖維包括矽灰石。
- 如請求項11之電子裝置,其中該等礦物纖維具有約1至約35微米之中值直徑。
- 如請求項11之電子裝置,其中該等礦物纖維具有約1.1至約100之縱橫比。
- 如請求項1之電子裝置,其中如根據ISO測試第11443:2014號在1,000 s- 1 之剪切率及高於該組合物之熔融溫度15℃的溫度下測定,該聚合物組合物具有約10至約250 Pa-s之熔融黏度。
- 如請求項1之電子裝置,其中該單一化載體部分包含金屬。
- 一種包含LED模組之燈總成,該LED模組含有一或多個發光二極體,其中該燈總成包含如請求項1至17中任一項之電子裝置。
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WO2021173408A1 (en) | 2020-02-26 | 2021-09-02 | Ticona Llc | Electronic device |
US11728065B2 (en) | 2020-07-28 | 2023-08-15 | Ticona Llc | Molded interconnect device |
EP4163714A4 (en) | 2020-10-23 | 2023-11-22 | Samsung Electronics Co., Ltd. | DISPLAY DEVICE |
US11728559B2 (en) | 2021-02-18 | 2023-08-15 | Ticona Llc | Polymer composition for use in an antenna system |
US20230220182A1 (en) * | 2022-01-13 | 2023-07-13 | Ticona Llc | High Performance Polymer Composition Containing Carbon Nanostructures |
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