TW202201596A - Substrate processing apparatus - Google Patents

Abstract

The present invention sufficiently improves processing performance of a processing liquid used for substrate processing. This substrate processing apparatus is provided with: a tank into which a processing liquid is supplied; a nozzle for discharging, from an outlet, the processing liquid to a substrate; a first piping connected to the tank and the outlet; a plasma processing unit that performs a plasma process for supplying a gas to the processing liquid and causing the supplied gas to generate a plasma; a second piping which branches from the first piping and through which the plasma-processed processing liquid flows; and a control unit that performs control for switching between a discharge mode for discharging the processing liquid and a discharge stop mode for circulating the processing liquid through the second piping.

Description

Substrate processing equipment

The technology disclosed in this specification relates to a substrate processing apparatus.

In the past, there has been a technique for improving the efficiency of the substrate processing by performing plasma processing on the processing liquid used in the substrate processing to improve the processing capability of the processing liquid.

For example, there is a technique for increasing the oxidative power of a treatment liquid used for substrate treatment by oxidizing sulfuric acid by oxygen radicals to generate Caroic acid (peroxymonosulfuric acid; H ₂ SO ₅ ) (for example, refer to Patent Document 1). ). [Prior Art Literature] [Patent Literature]

[Patent Document 1] Japanese Patent Laid-Open No. 2002-53312

(The problem that the invention intends to solve)

For example, in the case disclosed in Patent Document 1, although carrol's acid produced by plasma treatment is used for substrate processing, the amount of caro's acid produced by one plasma treatment is small. Therefore, there is a problem that the oxidizing power of the treatment liquid cannot be sufficiently improved.

The technique disclosed in this specification was completed in view of the above-mentioned problems, and is a technique for sufficiently improving the processing capability of the processing liquid used for the processing of the substrate. (Technical means to solve problems)

A first aspect of the technology for a substrate processing apparatus disclosed in this specification includes: a tank to which a processing liquid is supplied; a nozzle for discharging the processing liquid supplied from the tank from a discharge port toward a substrate; a first a pipe which is connected to the tank and the discharge port, and through which the processing liquid flows; and a plasma processing unit that supplies gas to the processing liquid flowing through the first pipe and applies the gas to be supplied a plasma treatment for generating plasma; a second pipe branched from the first pipe through which the treatment liquid after the plasma treatment is performed, and connected to the tank; and a control unit that executes a discharge mode and stops Switching control of a discharge mode in which the treatment liquid is discharged from the discharge port via the first piping, and a stop discharge mode in which the treatment liquid is circulated via the second piping and the discharge of the treatment liquid from the discharge port is stopped .

A second aspect of the technology disclosed in this specification is related to the first aspect, wherein the plasma processing unit generates the plasma from the gas before being supplied to the processing liquid.

A third aspect of the technology disclosed in this specification is related to the first or second aspect, wherein the plasma processing unit generates the plasma from the gas supplied to the processing liquid to become bubbles.

A fourth aspect of the technology disclosed in this specification is related to any one of aspects 1 to 3, wherein the plasma processing unit is installed in the vicinity of the nozzle, and the second piping is in the nozzle from the first to the third. 1 piping branch.

The fifth aspect of the technology disclosed in this specification is related to any one of the first to fourth aspects, wherein the gas supplied to the above-mentioned processing liquid is air, H ₂ , Ar, N ₂ , He or O ₂ .

A sixth aspect of the technology disclosed in this specification is related to any one of aspects 1 to 5, wherein the treatment liquid is sulfuric acid, and the plasma treatment unit performs the plasma treatment to remove the treatment liquid from the treatment liquid. Caroline acid is produced. (Compared to the efficacy of the prior art)

According to the first to sixth aspects of the technology disclosed in this specification, the plasma treatment can be repeatedly performed on the treatment liquid while the treatment liquid is circulated through the second pipe. Therefore, the plasma treatment can be performed on the treatment liquid a sufficient number of times, and the treatment liquid can be discharged from the nozzle in a state where the treatment capacity of the treatment liquid used for substrate processing is sufficiently improved by the plasma treatment.

In addition, the objects, features, aspects, and advantages related to the technology disclosed in this specification can be further clarified by the detailed description shown below and the accompanying drawings.

Hereinafter, embodiments will be described with reference to the accompanying drawings. In the following embodiments, detailed features and the like are also shown for the purpose of technical description, but these are merely examples, and these are not essential features for implementing the embodiments.

In addition, the "substrate" in the following embodiments can be applied to semiconductor wafers, glass substrates for photomasks, glass substrates for liquid crystal displays, glass substrates for plasma displays, substrates for FED (Field Emission Display), Various substrates such as substrates for optical disks, substrates for magnetic disks, and substrates for optical and magnetic disks. Hereinafter, an example of a substrate processing apparatus used for processing a disk-shaped semiconductor wafer will be mainly described, but the same can be applied to the processing of various substrates described above. In addition, various shapes can be applied to the shape of the substrate.

In addition, the drawings are shown schematically, and the configuration is appropriately omitted for the convenience of description, or the configuration is simplified in the drawings. In addition, the mutual relationship of the size and position of the components, etc., respectively shown in different drawings, is not necessarily recorded correctly, but is obtained by appropriately changing it. In addition, even if it is not a cross-sectional view, but in the figure, such as a top view, hatching may be shown in order to understand the content of an embodiment easily.

In addition, in the description shown below, the same component code|symbol is attached|subjected to the same component, and it is set as the same thing about the name and function. Therefore, in some cases, the detailed description about them is omitted in order to avoid duplication.

In addition, in the description described below, when a certain component is described as "has", "includes", "has", etc., unless otherwise stated, it is not intended to exclude other components Exclusivity of existence.

In addition, in the description described below, even when ordinal numbers such as "1st" or "2nd" are used, these terms are used for convenience in order to easily understand the content of the embodiment, and It is not limited to the order or the like generated by the ordinal numbers.

In addition, in the description described below, even if the use of "upper", "lower", "left", "right", "side", "bottom", "surface" or "rear" means a specific position In the case of terms of directions or directions, these terms are used for convenience in order to easily understand the content of the embodiment, and are not related to the actual position or direction at the time of implementation.

In addition, in the description described below, when it is described as "the upper surface of ..." or "the lower surface of ...", except for the upper surface itself or the lower surface itself of the constituent element to be the object, It is assumed that the state of other constituent elements formed on the upper surface or the lower surface of the constituent element to be targeted is also included. That is, for example, when it is described as "B provided on the upper surface of A", it does not prevent the case where another constituent element "C" is interposed between A and B.

<First Embodiment> Hereinafter, the substrate processing apparatus of the substrate processing system of the present embodiment will be described.

<About the configuration of the substrate processing system> FIG. 1 is a plan view schematically showing a configuration example of a substrate processing system 1 according to the present embodiment. The substrate processing system 1 includes a load port LP, an indexing robot IR, a central robot CR, a control unit 90 , and at least one processing unit UT (four processing units in FIG. 1 ).

Each processing unit UT is used for processing a substrate W (wafer), and at least one of them and a wiring structure connected to the processing unit UT corresponds to the substrate processing apparatus 100 . The substrate processing apparatus 100 is a monolithic apparatus that can be used for substrate processing, and specifically, is an apparatus that performs a process of removing organic substances adhering to the substrate W. As shown in FIG. The organic matter adhering to the substrate W is, for example, a used photoresist film. The photoresist film can be used, for example, as an implant mask for the ion implantation step.

Furthermore, the substrate processing apparatus 100 may have the chamber 80 . In this case, by using the control unit 90 to control the ambient gas in the chamber 80, the substrate processing apparatus 100 can perform substrate processing in a desired ambient gas.

The control part 90 can control the operation|movement of each component (the rotation motor 10D of the rotation jig 10 mentioned later, valve, heater, pump, AC power supply 304, etc.) in the substrate processing system 1. FIG. The carrier C is a container in which the substrates W are accommodated. In addition, the load port LP is a container holding mechanism for holding a plurality of carriers C. As shown in FIG. The index robot IR can transfer the substrate W between the load port LP and the substrate placement portion PS. The central robot CR can transfer the substrate W between the substrate placement portion PS and the processing unit UT.

With the above configuration, the indexing robot IR, the substrate placing unit PS, and the central robot CR function as a conveying mechanism that conveys the substrate W between each processing unit UT and the loading port LP.

The unprocessed substrate W is taken out from the carrier C by the indexing robot IR. Then, the unprocessed substrate W is transferred to the central robot CR via the substrate placement unit PS.

The central robot CR carries the unprocessed substrate W into the processing unit UT. Then, the processing unit UT processes the substrate W.

The substrate W processed in the processing unit UT is taken out from the processing unit UT by the central robot CR. Then, the processed substrate W is transferred to the indexing robot IR via the substrate placement unit PS after passing through another processing unit UT as necessary. The indexing robot IR carries the processed substrate W into the carrier C. As shown in FIG. Thereby, the process of the board|substrate W is performed.

FIG. 2 is a diagram schematically showing a configuration example of the control unit 90 shown in FIG. 1 . The control unit 90 may also be constituted by a general computer having an electric circuit. Specifically, the control unit 90 includes a central processing unit (CPU) 91 , a read only memory (ROM) 92 , and a random access memory (RAM) 93, a storage device 94, an input unit 96, a display unit 97, a communication unit 98, and a bus wire 95 connecting these to each other.

The ROM 92 stores basic programs. The RAM 93 is used as a work area when the CPU 91 executes predetermined processing. The storage device 94 is composed of a non-volatile storage device such as a flash memory or a hard disk device. The input unit 96 is constituted by various switches, a touch panel, and the like, and receives input setting instructions for processing recipes and the like from an operator. The display unit 97 is composed of, for example, a liquid crystal display device and lamps, and displays various information under the control of the CPU 91 . The communication unit 98 has a data communication function via a local area network (LAN) or the like.

The storage device 94 is preset with a plurality of modes related to the control of each configuration of the substrate processing system 1 of FIG. 1 . When the CPU 91 executes the processing program 94P, one of the above-mentioned plural modes is selected, and each configuration is controlled in this mode. Furthermore, the processing program 94P can also be stored in a recording medium. When this recording medium is used, the processing program 94P can be installed in the control unit 90 . In addition, a part or all of the functions performed by the control unit 90 are not necessarily realized by software, but can also be realized by hardware such as dedicated logic circuits.

FIG. 3 is a diagram schematically showing a configuration example of the substrate processing apparatus 100 according to the present embodiment. In FIG. 3, the piping structure of the processing liquid connected to one processing unit UT among a plurality of processing units UT is shown. In addition, although the piping structure of one type of processing liquid is shown in FIG. 3 for convenience, when several processing liquids are used, the piping structure corresponding to each processing liquid is connected separately.

The substrate processing apparatus 100 includes: a storage tank 14 for storing a processing liquid to be supplied from a processing liquid supply source (not shown); a heater 16 for controlling the temperature of the processing liquid flowing out of the storage tank 14; and a pump 18 , which flows the treatment liquid whose temperature is controlled by the heater 16 into the piping 200 leading to the treatment unit UT; the filter 20 , which removes impurities in the treatment liquid flowing in the piping 200 ; The flow path of the treatment liquid is opened and closed; the branch pipe 202 is branched from the pipe 200 upstream of the valve 22 and is connected to the storage tank 14; the valve 24 can open and close the flow path of the treatment liquid in the branch pipe 202 The flow meter 26 measures the flow rate of the treatment liquid flowing in the piping 200 downstream of the valve 22; the flow adjustment valve 28 adjusts the flow rate of the treatment liquid flowing in the piping 200; the heater 30, which will The processing liquid flowing in the piping 200 is heated to a desired discharge temperature; the valve 32 can open and close the flow path of the processing liquid in the piping 200 downstream of the heater 30; the plasma processing unit 34 is compared with the valve 32. In the piping 200 further downstream, the treatment liquid is subjected to plasma treatment; the valve 36, which can open and close the flow path of the treatment liquid in the piping 200 further downstream than the plasma treatment section 34; The piping 200 further downstream of the slurry treatment part 34 and upstream of the valve 36 is branched and connected to the cooler 54 and even the storage tank 14; the valve 40, which can open and close the flow path of the treatment liquid in the branch piping 204; suction The piping 206 branches from the branch piping 204 upstream of the valve 40, and sucks the processing liquid through the branch piping 204; the valve 42 opens and closes the flow path of the processing liquid in the suction piping 206; the cooler 54, It cools the treatment liquid supplied from the branch pipe 204 and returns it to the storage tank 14; the valve 44, which can connect the pipe 200 downstream of the heater 30 and upstream of the valve 32 to the pipe 200 downstream of the valve 40 The flow path of the processing liquid between the branch pipes 204 is opened and closed; the nozzle 38, which is connected to the pipe 200 downstream of the valve 36, discharges the processing liquid from the discharge port 148 toward the substrate W in the processing unit UT; and the processing unit UT, which is used to process the substrate W.

Furthermore, the valve may be an air valve or a solenoid valve, or may be another valve. In addition, a suction device (not shown here) is connected to the downstream end of the suction pipe 206 . In addition, the cooler 63 may be a water cooling unit, an air cooling unit, or other cooling units.

The processing unit UT includes: a rotating jig 10 that rotates the substrate W around a vertical rotation axis Z1 passing through the center of the substrate W while holding one substrate W in a substantially horizontal posture; and a cylindrical processing cup 12 that The rotary jig 10 is surrounded around the rotation axis Z1 of the substrate W. As shown in FIG.

Here, although sulfuric acid may be assumed as the treatment liquid, it may be, for example, a solution containing at least one of sulfate, peroxomonosulfuric acid, and peroxosulfate, pure water (DIW), or a solution containing hydrogen peroxide. solution etc.

The rotation jig 10 is provided with: a disk-shaped rotation base 10A for vacuum suction to the lower surface of the substrate W in a substantially horizontal posture; a rotation shaft 10C extending downward from the center of the rotation base 10A; and a rotation motor 10D, By rotating the rotating shaft 10C, the substrate W adsorbed to the spin base 10A is rotated. Furthermore, instead of the rotating jig 10, a clamp having a plurality of clamping pins protruding upward from the outer peripheral portion of the upper surface of the rotating base may be used, and the peripheral portion of the substrate W is clamped by the clamping pins. holding fixture.

Furthermore, the processing unit UT can also be surrounded by the chamber 80 of FIG. 1 . In addition, the pressure in the chamber 80 may be about atmospheric pressure (for example, 0.5 atm or more and 2 atm or less).

<About the operation of the substrate processing apparatus> Next, the operation of the substrate processing apparatus controlled by the control unit 90 will be described. The substrate processing method of the substrate processing apparatus according to the present embodiment includes: a step of performing chemical treatment on the substrate W transferred to the processing unit UT; steps; a step of applying a drying treatment to the substrate W that has been subjected to the cleaning treatment; and a step of carrying out the substrate W that has been subjected to the drying treatment from the processing unit UT.

Hereinafter, the step of removing the organic matter (such as the used photoresist film) attached to the substrate W during or after the chemical treatment included in the operation of the substrate processing apparatus (the above steps belong to the execution of the chemical treatment) The discharge mode of the treatment liquid, the stop discharge mode of stopping the discharge of the treatment liquid, and the suction mode of suctioning the treatment liquid in the steps of the steps, or the steps of performing the cleaning treatment) will be described. The discharge mode, the discharge stop mode, and the suction mode are switched by the control of the control unit 90 .

In the discharge mode in which the treatment liquid is discharged from the nozzle 38 , the valve 22 , the flow rate adjustment valve 28 , the valve 32 , and the valve 36 are opened, and the other valves are closed.

In the discharge mode, after the processing liquid in the storage tank 14 is heated by the heater 16 , it is sent to the piping 200 by the pump 18 . The processing liquid flowing in the piping 200 is sent to the piping 200 downstream of the valve 22 after impurities are removed by the filter 20 .

Then, in the piping 200 downstream of the valve 22 , the flow rate of the processing liquid is measured by the flow meter 26 , and the flow rate is adjusted by the flow rate adjustment valve 28 , and then heated to a desired discharge temperature by the heater 30 . Then, after the plasma processing unit 34 is subjected to plasma processing, the processing liquid is discharged from the nozzle 38 to the upper surface of the substrate W held (preferably rotated) by the processing unit UT. In addition, hydrogen peroxide may be added to the processing liquid in the piping 200 in the vicinity of the nozzle 38 .

In the stop discharge mode in which the discharge of the treatment liquid is stopped, the valve 22 , the valve 24 , the flow rate adjustment valve 28 , the valve 32 , and the valve 40 are opened, and the other valves are closed.

In the discharge stop mode, the processing liquid in the storage tank 14 is heated by the heater 16 and then sent to the piping 200 by the pump 18 . The treatment liquid flowing in the piping 200 is sent to the piping 200 downstream of the valve 22 after impurities are removed by the filter 20 , and the other part is sent to the branch piping 202 downstream of the valve 24 and returned to the storage tank 14 .

Then, in the piping 200 downstream of the valve 22 , the flow rate of the processing liquid is measured by the flow meter 26 , and the flow rate is adjusted by the flow rate adjustment valve 28 , and then heated to a desired discharge temperature by the heater 30 . Then, after the plasma treatment is performed in the plasma treatment unit 34 , the treatment liquid flows downstream of the valve 40 through the branch pipe 204 , and returns to the storage tank 14 through the cooler 54 .

In the discharge stop mode, by circulating the processing liquid in the circulation path from the storage tank 14 to the vicinity of the nozzle 38 , the processing liquid can be maintained at a desired temperature even in the vicinity of the nozzle 38 . Moreover, the plasma processing part 34 is arrange|positioned in this circulation path, and it is possible to repeatedly perform plasma processing on the circulating processing liquid. Therefore, by subjecting the treatment liquid to a sufficient number of plasma treatments, for example, the amount of Caroic acid (peroxymonosulfuric acid, H ₂ SO ₅ ) generated from the treatment liquid as sulfuric acid can be set to a desired amount. Therefore, the processing liquid can be discharged from the nozzles 38 by switching to the discharge mode under the control of the control unit 90 in a state where the processing capacity of the processing liquid used for substrate processing is sufficiently improved by plasma processing.

In the suction mode for suctioning the processing liquid remaining near the nozzle 38, the valve 22, the valve 24, the flow rate adjustment valve 28, the valve 36, the valve 42, and the valve 44 are opened, and the other valves are closed.

In the suction mode, the processing liquid in the storage tank 14 is heated by the heater 16 and then sent to the piping 200 by the pump 18 . The processing liquid flowing in the piping 200 is sent to the piping 200 downstream of the valve 22 after impurities are removed in the filter 20 , and then returned to the storage tank 14 via the valve 44 . Another part of the processing liquid flowing through the piping 200 is also sent to the branch piping 202 downstream of the valve 24 and returned to the storage tank 14 .

Moreover, the processing liquid remaining in the piping 200 downstream of the branch position of the branch piping 204 is sucked into the suction piping 206 by the suction force transmitted from the suction piping 206 through the branch piping 204 .

<About the configuration of the plasma processing unit> Next, the configuration of the plasma processing unit will be described. In addition, the plasma processing in the following plasma processing part may be atmospheric pressure plasma processing performed under atmospheric pressure.

FIG. 4 is a cross-sectional view showing a configuration example of the plasma processing unit 34 according to the present embodiment. As illustrated in FIG. 4 , in the plasma processing unit 34, the processing liquid 101 flows to a piping unit 301 formed of an insulator or the like. Further, the plasma processing unit 34 includes: a piping part 302 made of an insulator or the like connected to the side surface of the corner portion of the piping part 301; , and a pair of electrodes 303 arranged to face each other across the piping portion 301 ; and an AC power source 304 that applies an AC voltage to the pair of electrodes 303 .

One end of the piping portion 302 is connected to the side surface of the corner portion of the piping portion 301 , where the piping portion 301 and the piping portion 302 communicate with each other.

When the plasma treatment is performed, gas is supplied from a gas supply source (not shown) toward the piping portion 302 , and the gas is supplied to the processing liquid 101 in the piping portion 301 as bubbles 305 . Furthermore, when the air bubbles 305 reach the area in the piping portion 301 sandwiched by the pair of electrodes 303, a predetermined alternating voltage is applied to the pair of electrodes 303, and the gas in the air bubbles 305 generates plasma PL. Active species are generated in the bubbles 305 by the action of the plasma PL. Active species include polar ions, electrically neutral radicals, and the like. The active species generated in the bubbles 305 are supplied to the treatment liquid 101, and the treatment liquid 101 is modified by the action of the active species. For example, when the treatment liquid 101 is sulfuric acid (H ₂ SO ₄ ), if oxygen radicals as active species are supplied to the treatment liquid 101 , caronic acid is removed from the treatment liquid 101 by the oxidizing power of the oxygen radicals. generate.

In addition, gas such as O ₂ (ozone gas), Ne, CO ₂ , air, an inert gas, or a combination of these is set to be supplied from a gas supply source. The inert gas is, for example, N ₂ or a noble gas. The rare gas is, for example, He, Ar, or the like. For example, in the case where the supplied gas contains O ₂ , oxygen radicals may be generated in the plasma treatment.

In addition, radicals are generated in the treatment liquid 101 by the action of the plasma PL. The substrate processing capability of the processing liquid 101 can be improved by the oxidizing power of the radicals. For example, removal of a photoresist film (not shown here) from the substrate W may be facilitated.

FIG. 5 is a cross-sectional view showing a configuration example of the plasma processing unit 34A according to the present embodiment.

As illustrated in FIG. 5 , in the plasma processing section 34A, the processing liquid 101 flows to a piping section 301A made of resin or the like. Furthermore, the plasma processing unit 34A includes: a piping part 302A made of an insulator or the like connected to the side surface of the piping part 301A; A pair of electrodes 303 ; and an AC power source 304 for applying an AC voltage to the pair of electrodes 303 .

One end of the piping portion 302A is connected to the side surface of the corner portion of the piping portion 301A, where the piping portion 301A and the piping portion 302A communicate with each other.

In addition, the plasma processing unit 34A includes a porous material 306 in the piping portion 301A where the piping portion 301A and the piping portion 302A communicate with each other. Furthermore, the porous material 306 may not be provided.

When the plasma treatment is performed, the gas is supplied from a gas supply source (not shown) toward the piping portion 302A. Then, when a predetermined AC voltage is applied to the pair of electrodes 303 , plasma PL is generated in the space in the piping portion 302A sandwiched by the pair of electrodes 303 . A part of the gas passing through the plasma PL is denatured into an active species by the action of the plasma PL. The active species thus generated move from the piping portion 302A toward the porous material 306 in the piping portion 301A along the flow of the gas supplied from the gas supply source.

In this way, the active species are supplied to the porous material 306 together with the gas in the piping portion 302A. Then, the active species in the bubbles 307 are supplied to the treatment liquid 101 passing through the porous material 306 .

FIG. 6 is a cross-sectional view showing a configuration example of the plasma processing unit 34B according to the present embodiment.

As illustrated in FIG. 6 , in the plasma processing section 34B, the processing liquid 101 flows to the piping section 301A. Further, the plasma processing unit 34B includes a piping portion 302A connected to the side surface of the piping portion 301A, a rod-shaped electrode 303A provided in the piping portion 302A, and an annular electrode 303B provided on the side surface of the piping portion 302A. , and an AC power source 304 that applies an AC voltage to the electrodes 303A and 303B.

When the plasma treatment is performed, the gas is supplied from a gas supply source (not shown) toward the piping portion 302A. Then, by applying a predetermined alternating voltage between the electrode 303A and the electrode 303B, plasma PL is generated in the space in the piping portion 302A sandwiched by the electrode 303A and the electrode 303B. A part of the gas passing through the plasma PL is denatured into an active species by the action of the plasma PL. The active species thus generated move from the piping portion 302A toward the piping portion 301A along the flow of the gas supplied from the gas supply source.

In this way, the active species generated by the plasma PL are supplied to the processing liquid 101 as bubbles 307 together with the gas in the piping portion 302A.

FIG. 7 is a cross-sectional view showing a configuration example of the plasma processing unit 34C according to the present embodiment.

As illustrated in FIG. 7 , in the plasma processing unit 34C, the processing liquid 101 flows to the piping unit 301B formed of an insulator or the like. Further, the plasma processing unit 34C includes a piping portion 302A connected to the side surface of the piping portion 301B, a rod-shaped electrode 303A provided in the piping portion 302A, and a piping portion inserted upstream of the connection position of the piping portion 302A Electrode 303C in 301B, and alternating current power supply 304 that applies alternating voltage to electrode 303A and electrode 303C.

When the plasma treatment is performed, the gas is supplied from a gas supply source (not shown) toward the piping portion 302A. Then, when a predetermined AC voltage is applied between the electrode 303A and the electrode 303C, the plasma PL is mainly generated in the region in the piping portion 301B sandwiched by the electrode 303A and the electrode 303C. A part of the gas passing through the plasma PL is denatured into an active species by the action of the plasma PL. The active species thus generated move from the piping portion 302A toward the piping portion 301B along the flow of the gas supplied from the gas supply source.

In this way, the active species generated by the plasma PL are supplied to the processing liquid 101 as bubbles 307 together with the gas in the piping portion 302A.

<Second Embodiment> The substrate processing apparatus according to the present embodiment will be described below. In addition, in the following description, the same components as those described in the above-described embodiment are denoted by the same reference numerals, and their detailed descriptions are appropriately omitted.

<About the configuration of the substrate processing apparatus> FIG. 8 is a diagram schematically showing a configuration example of a substrate processing apparatus 100A according to the present embodiment. In FIG. 8, the piping structure of the processing liquid connected to one processing unit UT among a plurality of processing units UT is shown. In addition, although the piping structure of one type of processing liquid is shown in FIG. 8 for convenience, when several processing liquids are used, the piping structure corresponding to each processing liquid is connected separately.

The substrate processing apparatus 100A shown in FIG. 8 is provided with, in addition to the configuration shown in FIG. 3 , a branch pipe 208 branched from the pipe 200 downstream of the plasma processing section 34 and upstream of the valve 36 , and Connected to the buffer tank 48; the valve 46, which can open and close the flow path of the treatment liquid in the branch pipe 208; A heater 50, which is provided in the branch pipe 208 downstream of the buffer tank 48, and controls the temperature of the process liquid flowing in the branch pipe 208; and a pump 52, which is provided in the branch pipe 208. A branch pipe 208 further downstream is 50 to flow the treatment liquid in the branch pipe 208 .

<About the operation of the substrate processing apparatus> Hereinafter, the discharge stop mode in which the discharge of the processing liquid is stopped will be described in particular. In the discharge stop mode, the valve 22 , the valve 24 , the flow rate adjustment valve 28 , the valve 32 , and the valve 46 are opened, and the other valves are closed.

In the discharge stop mode, the processing liquid in the storage tank 14 is heated by the heater 16 and then sent to the piping 200 by the pump 18 . After the impurities are removed in the filter 20, the treatment liquid flowing in the piping 200 is partially sent to the piping 200 downstream of the valve 22, and the other part is sent to the branch piping 202 downstream of the valve 24 and returned to the storage tank 14 .

Then, in the piping 200 downstream of the valve 22 , the flow rate of the treatment liquid is measured by the flow meter 26 and the flow rate is adjusted by the flow rate adjustment valve 28 , and then heated to a desired discharge temperature by the heater 30 . Then, the treatment liquid is subjected to plasma treatment in the plasma treatment unit 34 , and then flows downstream of the valve 46 through the branch pipe 208 .

Downstream of the valve 46 , after the treatment liquid is temporarily stored in the buffer tank 48 , the temperature is controlled by the heater 50 , and then returned from the pump 52 to the piping 200 upstream of the plasma processing unit 34 .

In this way, the treatment liquid flowing into the branch pipe 208 is repeatedly subjected to plasma treatment in the plasma treatment section 34 .

In the discharge stop mode, by circulating the treatment liquid in a relatively short circulation path including the branch pipe 208, the circulating treatment liquid can be repeatedly subjected to plasma treatment in a relatively short period. Therefore, by subjecting the treatment liquid to a sufficient number of plasma treatments in a short period of time, for example, the amount of Caroic acid generated from the treatment liquid as sulfuric acid can be set to a desired amount in a short period of time.

<Third Embodiment> The substrate processing apparatus according to the present embodiment will be described below. In addition, in the following description, the same components as those described in the above-described embodiment are denoted by the same reference numerals, and their detailed descriptions are omitted as appropriate.

<About the configuration of the substrate processing apparatus> In the present embodiment, the configuration shown in FIG. 3 will be described in which the plasma processing unit is attached to the vicinity of the nozzle. That is, the structures corresponding to the branch piping 204 and the valve 36 located downstream of the piping 200 in the plasma processing section are provided in the nozzles, respectively.

FIG. 9 is a cross-sectional view showing a nozzle 38A of the present embodiment and a configuration example related thereto.

As illustrated in FIG. 9 , the nozzle 38A is connected to a pipe 401 and a pipe 402 through which air flows, and a pipe 311 and a pipe 312 through which the processing liquid 101 flows. Then, a piping 321 to which gas is supplied from a gas supply source (not shown) is connected to the side surface of the piping 311 .

The nozzle 38A includes a main body 136 in which a flow path 135 for guiding the treatment liquid 101 is formed, a valve body 137 for opening and closing the flow path 135 , and a valve body 137 for advancing and retreating in the X1 direction in the valve chamber 140 to open and close the flow path 135 . Pneumatic actuator 138 . The pneumatic actuator 138 corresponds to the configuration of the valve 36 .

Here, the flow path 135 includes a flow path 135A extending toward the piping 311 , a flow path 135B extending toward the piping 312 , and a flow path 135C extending toward the downstream side of the valve chamber 140 . In addition, the flow path 135A and the flow path 135B converge on the upstream side of the valve chamber 140 . The flow path 135B corresponds to the configuration of the branch pipe 204 . In addition, the flow path 135C is a flow path led to the front end of the nozzle 38A, is located below the nozzle 38A, and is guided to the discharge port 148 from which the processing liquid 101 is discharged.

The pneumatic actuator 138 includes a cylinder 139 , a piston 142 , a spring 143 , and a rod 144 . The cylinder 139 and the valve chamber 140 are arranged in line in the X1 direction. Moreover, the space between the cylinder 139 and the valve chamber 140 is partitioned by a partition wall 141 .

The cylinder 139 is partitioned by the piston 142 into a front chamber on the side of the partition wall 141 and a rear chamber on the opposite side in the X1 direction across the piston 142 . The piston 142 advances and retreats in the X1 direction in the cylinder 139 by transmitting the air pressure of the air supplied from the piping 401 or the piping 402 to either the front chamber or the rear chamber of the cylinder 139 .

The spring 143 is interposed between the piston 142 and the main body 136 on the rear chamber side of the cylinder 139 to press the piston 142 toward the partition wall 141 side.

The base of the rod 144 is connected to the piston 142 , and the distal end of the rod 144 penetrates the partition wall 141 and protrudes to the valve chamber 140 . The valve body 137 is connected to the front end portion of the rod 144 protruding to the valve chamber 140 . The valve body 137 is formed in a disk shape, and is coupled to the distal end portion of the rod 144 so that the radial direction is orthogonal to the X1 direction. The valve body 137 advances and retreats in the X1 direction in the valve chamber 140 via the rod 144 when the piston 142 advances and retreats in the X1 direction in the cylinder 139 .

The valve chamber 140 has an annular valve seat surface 146 facing the partition wall 141 and orthogonal to the X1 direction. The flow path 135A (or the flow path 135B) is concentrically opened at the center of the valve seat surface 146 . Moreover, the flow path 135C is opened to the side of the advancing and retracting direction (X1 direction) of the valve body 137 of the valve chamber 140 .

When the air pressure from the piping 401 (or the piping 402 ) is not applied to any one of the front chamber and the rear chamber of the cylinder 139 and the air actuator 138 is not actuated, the piston 142 is pushed by the spring 143 It is pressed to the forward position in the cylinder 139 , that is, the position close to the partition wall 141 as illustrated in FIG. 9 . Thereby, the valve body 137 contacts the valve seat surface 146 in the valve chamber 140, and the opening of the flow path 135A (or the flow path 135B) is closed.

Therefore, the space between the flow path 135A (or the flow path 135B) and the flow path 135C is closed, and the processing liquid 101 supplied from the storage tank 14 is returned to the cooler 54 through the flow path 135B (corresponding to the branch pipe 204) and even to the storage tank 14. Slot 14 (stop discharge mode).

In the stop-discharge mode, when the air pressure is transmitted to the front chamber of the cylinder 139, the piston 142 is made to retreat toward the rear chamber of the cylinder 139 against the pressing force of the spring 143, and the valve body 137 is separated from the valve seat in the valve chamber 140. face 146. Thereby, the opening of the flow path 135A (or the flow path 135B) is opened to the valve chamber 140 .

Therefore, the flow path 135A (or the flow path 135B) and the flow path 135C are connected via the valve chamber 140, and the processing liquid 101 supplied from the storage tank 14 is discharged from the opening of the nozzle 38A via the flow path 135C (discharge mode).

In the discharge mode, instead of stopping the transmission of air pressure to the front chamber of the cylinder 139, if the air pressure is transmitted to the rear chamber of the cylinder 139, the piston 142 is moved toward the front chamber of the cylinder 139 along the pushing force of the spring 143 (that is, close to the front chamber of the cylinder 139). moving forward in the direction of the partition wall 141 ), the valve body 137 contacts the valve seat surface 146 in the valve chamber 140 . Thereby, the opening of the flow path 135A (or the flow path 135B) is closed.

Therefore, the space between the flow path 135A (or the flow path 135B) and the flow path 135C is closed, and the processing liquid 101 returned to the supply from the storage tank 14 is returned to the cooler 54 via the flow path 135B (corresponding to the branch pipe 204 ). Even in the stop discharge mode of the storage tank 14 .

In addition, the valve provided in the nozzle 38A is not limited to the above-mentioned air valve, and may be a solenoid valve or another valve.

On the other hand, the piping 321 is provided with a pair of electrodes 303 and an AC power source 304 as a configuration for performing plasma treatment. The AC power supply 304 applies an AC voltage to the pair of electrodes 303 . In this way, the plasma processing unit including the piping 321 , the electrodes 303 , and the AC power source 304 is attached to the side surface of the piping 311 .

One end of the piping 321 is connected to the side surface of the piping 311 , and the piping 321 and the piping 311 communicate with each other there. Moreover, the porous material 306 is provided in the piping 311 where the piping 321 and the piping 311 communicate. Furthermore, it may not include the porous material 306 .

When the plasma treatment is performed, the gas is supplied toward the piping 321 from the gas supply source. Then, by applying a predetermined alternating voltage to the pair of electrodes 303 , plasma PL is generated in the space in the pipe 321 sandwiched by the pair of electrodes 303 . A part of the gas passing through the plasma PL is denatured into an active species by the action of the plasma PL. The active species thus generated move from the piping 321 toward the porous material 306 in the piping 311 along the flow of the gas supplied from the gas supply source.

In this way, the active species generated by the plasma PL are supplied to the porous material 306 together with the gas in the piping 321 . Then, the active species in the bubbles 307 are supplied to the treatment liquid 101 passing through the porous material 306 .

According to the present embodiment, the plasma processing unit including the piping 321, the electrode 303, and the AC power supply 304 is installed in the vicinity of the nozzle 38A. Therefore, the treatment liquid 101 flows and circulates in the flow path 135B, and the plasma treatment is performed a sufficient number of times. Therefore, the processing liquid 101 can be discharged from the discharge port 148 of the nozzle 38A in a state where the processing capability of the processing liquid 101 used for the substrate processing is sufficiently improved by the plasma treatment.

In addition, since the plasma processing unit is installed in the vicinity of the nozzle 38A, the processing liquid 101 may be discharged from the nozzle 38A while the radicals generated by the plasma processing remain in the processing liquid 101. Outlet 148 spit out. In this case, the substrate processing capability of the processing liquid 101 is improved by the oxidizing power of radicals. Furthermore, the lifetime coefficient of OH radicals is about 100 μs, and when the droplet velocity is several tens of m/s, the activity of OH radicals should be able to be maintained sufficiently at least about 10 mm.

<About the effects of the above-described embodiment> Next, the example of the effect by the embodiment described above is shown. In addition, in the following description, although this effect is described based on the specific structure exemplified in the above-described embodiment, it can be replaced by other specific structures exemplified in this specification within the scope of producing the same effect. constitute.

In addition, this replacement may be performed across a plurality of embodiments. That is, it is also possible to combine the respective configurations exemplified in different embodiments to produce the same effect.

According to the above-described embodiment, the substrate processing apparatus includes the tank, the nozzle 38 (or the nozzle 38A. Hereinafter, any one of these may be described as corresponding for convenience), the first piping, The plasma processing unit 34 (or the plasma processing unit 34A, the plasma processing unit 34B, and the plasma processing unit 34C. In the following, there are cases where any of these are described as corresponding for convenience), the second piping, and the control unit 90 . Here, the tank corresponds to, for example, the storage tank 14 or the buffer tank 48 (hereinafter, there is a case where either of these is described as corresponding for convenience). In addition, the 1st piping corresponds to the piping 200 etc., for example. In addition, the 2nd piping corresponds to, for example, the branch pipe 204, the branch pipe 208, or the like (in the following, there is a case where any one of these is described as corresponding for the sake of convenience). The processing liquid 101 is supplied to the storage tank 14 . The nozzle 38 discharges the processing liquid 101 supplied from the storage tank 14 to the substrate W from the discharge port 148 . The piping 200 is connected to the storage tank 14 and the discharge port 148 . Moreover, the processing liquid 101 flows through the piping 200 . The plasma processing unit 34 supplies gas to the processing liquid 101 flowing through the piping 200 . In addition, the plasma processing unit 34 performs plasma processing for generating plasma from the supplied gas. The branch pipe 204 is branched from the pipe 200 through which the plasma-treated processing liquid 101 flows. Moreover, the branch pipe 204 is connected to the storage tank 14 . The control unit 90 performs switching control between a discharge mode in which the treatment liquid 101 is discharged from the discharge port 148 via the piping 200 and a discharge stop mode in which the treatment liquid 101 is circulated via the branch pipe 204 and the treatment liquid 101 is discharged. The discharge from the discharge port 148 stops.

According to such a configuration, while the processing liquid 101 is circulated through the circulation path of the branch pipe 204 or the branch pipe 208 , the plasma treatment can be repeatedly performed on the processing liquid 101 . Therefore, by subjecting the treatment liquid 101 to a sufficient number of plasma treatments, for example, the amount of Carrot's acid generated from the treatment liquid 101 which is sulfuric acid can be set to a desired amount. Therefore, the processing liquid 101 can be discharged from the nozzle 38 in a state where the processing capability of the processing liquid 101 used for the substrate processing is sufficiently improved by the plasma treatment.

Furthermore, even when the above-mentioned structure is appropriately added with other structures illustrated in this specification, that is, when other structures in this specification that are not mentioned in the above-mentioned structure are appropriately added, the same can occur. Effect.

Moreover, according to the embodiment described above, the plasma processing unit 34A, the plasma processing unit 34B, and the plasma processing unit 34C generate plasma in the gas before being supplied to the processing liquid 101 . According to such a configuration, by subjecting the processing liquid 101 to the plasma treatment a sufficient number of times, the processing liquid 101 used for the substrate processing can be sufficiently improved in the processing capability of the processing liquid 101 by the plasma treatment. 101 is ejected from the nozzle 38 .

Moreover, according to the embodiment described above, the plasma processing unit 34 generates plasma in the gas supplied to the processing liquid 101 to become bubbles. According to such a configuration, by subjecting the processing liquid 101 to the plasma treatment a sufficient number of times, the processing liquid 101 used for the substrate processing can be sufficiently improved in the processing capability of the processing liquid 101 by the plasma treatment. 101 is ejected from the nozzle 38 .

Moreover, according to the embodiment described above, the plasma processing unit including the piping 321, the electrode 303, and the AC power supply 304 is attached near the nozzle 38A. Then, the flow path 135B corresponding to the second pipe branches from the flow path 135A corresponding to the first pipe in the nozzle 38A. According to such a configuration, the processing liquid 101 can be discharged from the discharge port 148 of the nozzle 38A while the radicals generated by the plasma treatment remain in the processing liquid 101 . In this case, the substrate processing capability of the processing liquid 101 can be improved by the oxidizing power of the radicals.

Moreover, according to the embodiment described above, the gas supplied to the treatment liquid 101 is air, H ₂ , Ar, N ₂ , He or O ₂ . According to such a configuration, by subjecting the processing liquid 101 to the plasma treatment a sufficient number of times, the processing liquid 101 used for the substrate processing can be sufficiently improved in the processing capability of the processing liquid 101 by the plasma treatment. 101 is ejected from the nozzle 38 .

In addition, according to the embodiment described above, the treatment liquid 101 is sulfuric acid. Then, the plasma processing unit 34 performs the plasma processing to generate Caroline acid from the processing liquid 101 . According to such a configuration, the amount of Carroll's acid generated from the treatment liquid 101 as sulfuric acid can be set to a desired amount by performing the plasma treatment on the treatment liquid 101 a sufficient number of times.

<About the modified example of the above-mentioned embodiment> In the above-described embodiments, the materials, materials, dimensions, shapes, relative arrangement relationships, and implementation conditions of each constituent element are described, but these are merely exemplary, and the present invention is not limited to this specification. recorded.

Therefore, innumerable variations and equivalents that are not exemplified can be considered to be within the technical scope disclosed in this specification. For example, at least one constituent element may be changed, added or omitted, or at least one constituent element of at least one embodiment may be extracted and added to constituent elements of other embodiments. Combination situation.

In addition, in the embodiment described above, in the case where the name of the material is not specified, the material may contain other additives, such as alloys, as long as there is no conflict.

1: Substrate processing system 10: Rotary fixture 10A: Swivel base 10C: Rotary axis 10D: Rotary Motor 12: Processing Cups 14: Storage tank 16, 30, 50: heater 18, 52: Pump 20: Filter 22, 24, 32, 36, 40, 42, 44, 46: Valve 26: Flowmeter 28: Flow adjustment valve 34, 34A, 34B, 34C: Plasma Treatment Department 38, 38A: Nozzle 48: Buffer slot 54, 63: Cooler 80: Chamber 90: Control Department 91:CPU 92:ROM 93: RAM 94: Storage Device 94P: Handler 95: bus wire 96: Input section 97: Display part 98: Ministry of Communications 100, 100A: Substrate processing device 101: Treatment liquid 135, 135A, 135B, 135C: flow path 136: Ontology 137: valve body 138: Pneumatic actuator 139: Cylinder 140: valve chamber 141: Next door 142: Piston 143: Spring 144: Rod 146: valve seat surface 148: Spit out 200, 311, 312, 321, 401, 402: Piping 202, 204, 208: branch pipes 206: Suction piping 301, 301A, 301B, 302, 302A: Piping Department 303, 303A, 303B, 303C: Electrodes 304: AC Power 305, 307: Bubbles 306: Porous Materials C: vehicle CR: Central Robot IR: Indexing Robot LP: Load port PL: Plasma PS: Substrate mounting part UT: processing unit W: substrate Z1: Rotation axis

FIG. 1 is a plan view schematically showing a configuration example of a substrate processing system according to an embodiment. FIG. 2 is a diagram schematically showing a configuration example of the control unit illustrated in FIG. 1 . FIG. 3 is a diagram schematically showing a configuration example of the substrate processing apparatus according to the embodiment. FIG. 4 is a cross-sectional view showing a configuration example of the plasma processing unit according to the embodiment. FIG. 5 is a cross-sectional view showing a configuration example of the plasma processing unit according to the embodiment. FIG. 6 is a cross-sectional view showing a configuration example of the plasma processing unit according to the embodiment. FIG. 7 is a cross-sectional view showing a configuration example of the plasma processing unit according to the embodiment. FIG. 8 is a diagram schematically showing a configuration example of the substrate processing apparatus according to the embodiment. FIG. 9 is a cross-sectional view showing a nozzle according to the embodiment and a configuration example related thereto.

10: Rotary fixture

10A: Swivel base

10C: Rotary axis

10D: Rotary Motor

12: Processing Cups

14: Storage tank

16, 30: heater

18: Pump

20: Filter

22, 24, 32, 36, 40, 42, 44: valve

26: Flowmeter

28: Flow adjustment valve

34: Plasma Processing Department

38: Nozzle

54: Cooler

90: Control Department

100: Substrate processing device

148: Spit out

200: Piping

202, 204: Branch management

206: Suction piping

UT: processing unit

W: substrate

Z1: Rotation axis

Claims (6)

A substrate processing apparatus is provided with: a tank, which is supplied with a treatment liquid; a nozzle, which discharges the processing liquid supplied from the tank from the discharge port toward the substrate; a first piping, which is connected to the tank and the discharge port, and through which the treatment liquid flows; a plasma processing unit that supplies gas to the processing liquid flowing through the first piping, and performs plasma processing for generating plasma from the supplied gas; a second pipe branched from the first pipe through which the treatment liquid after the plasma treatment has been performed flows, and is connected to the tank; and A control unit that performs switching control of a discharge mode in which the treatment liquid is discharged from the discharge port through the first pipe and a discharge stop mode that circulates the treatment liquid through the second pipe and causes the discharge to be stopped. The discharge of the above-mentioned treatment liquid from the above-mentioned discharge port is stopped. The substrate processing apparatus of claim 1, wherein, The plasma processing unit generates the plasma from the gas before being supplied to the processing liquid. The substrate processing apparatus of claim 1 or 2, wherein, The said plasma processing part produces|generates the said plasma by the said gas which is supplied to the said processing liquid and becomes a bubble. The substrate processing apparatus of claim 1 or 2, wherein, The plasma processing unit is installed in the vicinity of the nozzle, The said 2nd piping is branched from the said 1st piping in the said nozzle. The substrate processing apparatus according to claim 1 or 2, wherein the gas supplied to the processing liquid is air, H ₂ , Ar, N ₂ , He or O ₂ . The substrate processing apparatus of claim 1 or 2, wherein, The above-mentioned treatment liquid is sulfuric acid, The said plasma processing part produces|generates Carroll's acid from the said processing liquid by performing the said plasma processing.

Images