TW202200798A - Alloy wire - Google Patents
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- TW202200798A TW202200798A TW109120716A TW109120716A TW202200798A TW 202200798 A TW202200798 A TW 202200798A TW 109120716 A TW109120716 A TW 109120716A TW 109120716 A TW109120716 A TW 109120716A TW 202200798 A TW202200798 A TW 202200798A
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/42—Wire connectors; Manufacturing methods related thereto
- H01L24/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L24/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
- H01L2224/45001—Core members of the connector
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- H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
- H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
- H01L2224/45139—Silver (Ag) as principal constituent
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Abstract
Description
本發明係有關於一種合金線材,且特別關於用於電子封裝打線接合的合金線材。The present invention relates to an alloy wire, and in particular to an alloy wire used for wire bonding of electronic packages.
打線接合為積體電路(IC)及發光二極體(LED)封裝製程的主要內連線(interconnection)方法。打線接合線材除了提供晶片與基材之間的訊號與功率傳輸,亦可兼具散熱功能。因此打線接合線材必須有高導電性、高導熱性、足夠的強度及延展性。由於封裝之高分子封膠常含有腐蝕性氯離子,且高分子封膠本身具環境吸濕性,線材必須有良好的抗氧化性與耐腐蝕性。Wire bonding is the primary interconnection method for integrated circuit (IC) and light emitting diode (LED) packaging processes. In addition to providing signal and power transmission between the chip and the substrate, the wire bonding wire can also serve as a heat dissipation function. Therefore, the wire bonding wire must have high electrical conductivity, high thermal conductivity, sufficient strength and ductility. Since the encapsulated polymer sealant often contains corrosive chloride ions, and the polymer sealant itself has environmental moisture absorption, the wire must have good oxidation resistance and corrosion resistance.
在打線接合過程,線材與半導體晶片銲墊的接合界面會形成介金屬化合物(intermetallic compounds)。這些介金屬化合物可確保界面接合性,但過量的介金屬化合物會造成界面脆裂及產生科肯達孔洞(Kirkendall voids)。在使用電子產品時,通過線材的高電流密度也可能使線材內部發生電遷移現象(electron migration)。其造成線材一端形成孔洞而降低導電性與導熱性,甚至造成斷線。此外,銀線材在水溶液中通電流亦可能產生離子遷移而造成短路。During the wire bonding process, intermetallic compounds are formed at the bonding interface between the wire and the semiconductor wafer pad. These intermetallic compounds can ensure interfacial bonding, but excessive intermetallic compounds can cause interfacial embrittlement and Kirkendall voids. When using electronic products, the high current density through the wire may also cause electromigration within the wire. It causes a hole at one end of the wire to reduce electrical and thermal conductivity, and even lead to disconnection. In addition, the silver wire may also cause ion migration and cause short circuit when current is passed through the aqueous solution.
在習知的金屬線材打線接合過程中,容易在銲球接點附近形成熱影響區,使晶粒成長造成銲球接點的強度劣化。打線接合強度降低進而劣化產品品質。In the conventional wire bonding process of metal wires, a heat-affected zone is easily formed near the solder ball joint, and the strength of the solder ball joint is deteriorated due to grain growth. The wire bonding strength is lowered and the product quality is deteriorated.
本揭露提供一種合金線材,包括銀基材及第一元素。第一元素表面能大於1.5J/m2 ,添加至銀基材中。合金線材的中心部位具有長條形晶粒或等軸晶粒,其餘部位為等軸晶粒,其中合金線材具有孿晶晶粒,並且在合金線材之截面金相圖中,孿晶晶粒數量佔所有晶粒數量的20%以上。The present disclosure provides an alloy wire including a silver base material and a first element. The first element has a surface energy greater than 1.5 J/m 2 and is added to the silver substrate. The central part of the alloy wire has elongated grains or equiaxed grains, and the rest are equiaxed grains, wherein the alloy wire has twin grains, and in the cross-sectional metallographic diagram of the alloy wire, the number of twin grains It accounts for more than 20% of all grains.
以下內容提供了很多不同的實施例或範例,用於實施本發明實施例的不同部件。組件和配置的具體範例描述如下,以簡化本發明實施例。當然,這些僅僅是範例,並非用以限定本發明實施例。舉例來說,敘述中若提及第一部件形成於第二部件之上,可能包含第一和第二部件直接接觸的實施例,也可能包含額外的部件形成於第一和第二部件之間,使得第一和第二部件不直接接觸的實施例。另外,本發明實施例可能在許多範例中重複元件符號及/或字母。這些重複是為了簡化和清楚的目的,其本身並非代表所討論各種實施例及/或配置之間有特定的關係。The following provides many different embodiments or examples for implementing different components of embodiments of the invention. Specific examples of components and configurations are described below to simplify embodiments of the invention. Of course, these are only examples, and are not intended to limit the embodiments of the present invention. For example, if the description mentions that the first part is formed on the second part, it may include embodiments in which the first and second parts are in direct contact, and may also include additional parts formed between the first and second parts. , so that the first and second parts are not in direct contact with each other. Additionally, embodiments of the present invention may repeat reference numerals and/or letters in many instances. These repetitions are for the purpose of simplicity and clarity and do not in themselves represent a specific relationship between the various embodiments and/or configurations discussed.
此處所使用的用語「約」、「近似」等類似用語描述數字或數字範圍時,該用語意欲涵蓋的數值是在合理範圍內包含所描述的數字,例如在所描述的數字之+/- 10%之內,或本發明所屬技術領域中具有通常知識者理解的其他數值。例如,用語「約5 nm」涵蓋從4.5nm至5.5nm的尺寸範圍。When the terms "about," "approximately," and the like are used herein to describe numbers or ranges of numbers, the term is intended to encompass numerical values that are within a reasonable range including the number described, such as within +/- 10 of the number being described. %, or other numerical values understood by those of ordinary skill in the technical field to which the present invention belongs. For example, the term "about 5 nm" covers a size range from 4.5 nm to 5.5 nm.
根據一些實施例,第1A-1C圖為本揭露第一形態之圓形合金線材10。第1A圖是合金線材10的一部分線段。第1B圖是沿著平行於第1A圖所示合金線材10的長度方向的縱切面圖。第1C圖是沿著垂直於第1A圖所示合金線材10的長度方向的橫截面圖。According to some embodiments, FIGS. 1A-1C are the
參考第1A圖,圓形合金線材10的材質為在銀基材中添加微量,例如0.001至1.0%的高表面能第一元素的合金線材。高表面能第一元素包括表面能大於1.5 J/m2
,例如Cu、In、Ni、Sb、Sn、Ti、Ru、Ta、其他合適的元素或其組合。圓形合金線材10的直徑介於10m至50m,例如15m至25m。Referring to FIG. 1A , the material of the
由於合金線材添加高表面能元素,外界環境的汙染顆粒較不易附著。因此可以確保線材表面潔淨度,線材的抗氧化性與抗腐蝕性亦被改善。Due to the addition of high surface energy elements to the alloy wire, the pollution particles in the external environment are less likely to adhere. Therefore, the surface cleanliness of the wire can be ensured, and the oxidation resistance and corrosion resistance of the wire can be improved.
此外,當圓形合金線材在進行熱壓打線接合(Thermo-compressive wire bonding)的電弧燒熔(Electrical Flame-Off, EFO)步驟時,熔融燒球(Free Air Ball, FAB)由於表面張力作用,較易形成球體。其可避免線材發生偏心球或高爾夫球缺陷,而有較好的封裝作業性。In addition, when the circular alloy wire is subjected to the Electrical Flame-Off (EFO) step of thermo-compressive wire bonding, the Free Air Ball (FAB) due to surface tension, easier to form spheres. It can avoid eccentric ball or golf ball defects in the wire, and has better packaging workability.
參考第1B圖,圓形合金線材10的縱切面為具有複數個晶粒的面心立方多晶結構。大部分為等軸晶粒12。各等軸晶粒12之間以高角度晶界14為界,並且具有孿晶晶粒16。在隨機抽樣的合金線材的截面金相圖中,孿晶晶粒16數量佔所有晶粒數量的20%以上。在一些實施例中,除了等軸晶粒12,圓形合金線材10的中心部位也存在長條形晶粒18。在一些實施例中,圓形合金線材10的中心部位皆為等軸晶粒12,不存在長條形晶粒18。Referring to FIG. 1B , the longitudinal section of the
在一些實施例中,等軸晶粒12的尺寸可以很均勻,其平均粒徑為1m至10m,如第1D圖所示。在一些實施例中,等軸晶粒12可能出現許多超大晶粒,其粒徑為5m至10m,如第1E圖所示。In some embodiments, the size of the
在本說明書中所述「圓形合金線材的中心部位」,指的是從線材的軸心起算,沿著線材半徑方向的30%的線材半徑值的範圍內的部位。線材的中心部位具有長條形晶粒18及/或等軸晶粒12,其餘部位為等軸晶粒12。In this specification, the "central part of the round alloy wire rod" refers to the part within the range of 30% of the wire rod radius value along the wire rod radius direction from the axis of the wire rod. The central portion of the wire rod has
根據一些實施例,第2A-2C圖為本揭露第二形態之扁帶形合金線材20。第2A圖是合金線材20的一部分線段。第2B圖是沿著平行於第2A圖所示合金線材20的長度方向的縱切面圖。第2C圖是沿著垂直於第2A圖所示合金線材20的長度方向的橫截面圖。According to some embodiments, FIGS. 2A-2C are the flat ribbon-shaped
參考第2A圖,扁帶形合金線材20的材質與上述圓形合金線材10相同,亦添加高表面能第一元素,此處不再贅述。扁帶形合金線材20的厚度為50m至200m,例如100m至150m,並且寬度為1000m至2000m,例如1500m至2000m。Referring to FIG. 2A , the material of the flat ribbon-shaped
由於合金線材添加高表面能元素,當扁帶形合金線材在進行在進行超音波接合(ultrasonic wedge bonding)時,亦可表現較好的結球作業性。Due to the addition of high surface energy elements to the alloy wire, when the flat ribbon-shaped alloy wire is undergoing ultrasonic welding (ultrasonic wedge bonding), it can also show better balling workability.
線材與銲墊接合驅動力為線材與銲墊總表面能減去接合後的線材/銲墊界面能。本揭露之合金線材具有較高的表面能,線材與晶片銲墊接合的驅動力也較高,因而提高接合力。The driving force for the bonding of the wire and the pad is the total surface energy of the wire and the pad minus the wire/pad interface energy after bonding. The alloy wire of the present disclosure has higher surface energy, and the driving force for bonding the wire to the die pad is also higher, thereby improving the bonding force.
參考第2B圖,扁帶形合金線材20的縱切面為具有複數個晶粒的面心立方多晶結構。其大部分為等軸晶粒22。各等軸晶粒22之間以高角度晶界24為界,並且具有孿晶晶粒26。在隨機抽樣的合金線材的截面金相圖中,孿晶晶粒26數量佔所有晶粒數量的20%以上。在一些實施例中,除了等軸晶粒22,扁帶形合金線材20的中心部位也存在長條形晶粒28。在一些實施例中,扁帶形合金線材20的中心部位皆為等軸晶粒22,不存在長條形晶粒28。Referring to FIG. 2B , the longitudinal section of the flat ribbon-shaped
在一些實施例中,等軸晶粒12的尺寸可以很均勻,其平均粒徑為1m至10m,如第2D圖所示。在一些實施例中,等軸晶粒12可能出現許多超大晶粒,其粒徑為5m至10m,如第2E圖所示。In some embodiments, the size of the
在本說明書中所述「扁帶形合金線材的中心部位」,指的是從線材的軸心起算,1/3的範圍內的部位。線材的中心部位具有長條形晶粒18及/或等軸晶粒12,其餘部位為等軸晶粒12。In this specification, "the center part of the flat strip-shaped alloy wire" refers to the part within the range of 1/3 from the axis of the wire. The central portion of the wire rod has elongated
退火孿晶組織的形成是由於冷加工在材料內部累積應變能。後續退火熱處理時,這些應變能驅動部分區域之原子均勻剪移(shear)至與其所在晶粒內部未剪移原子形成相互鏡面對稱之晶格位置,此即為退火孿晶(annealing twin)。其相互對稱之界面即為孿晶界(twin boundary)。The formation of the annealing twin structure is due to the accumulation of strain energy inside the material due to cold working. During the subsequent annealing heat treatment, these strain energy drives the atoms in some regions to uniformly shear to the unsheared atoms inside the grain to form mirror-symmetrical lattice positions, which are called annealing twins. The mutually symmetrical interfaces are called twin boundaries.
退火孿晶主要發生在晶格排列最緊密之面心立方(face centered cubic, FCC)結晶材料。除了面心立方結晶構造條件,通常疊差能(stacking fault energy)越小的材料越容易產生退火孿晶。例如,鋁雖為面心立方結晶構造材料,但其疊差能大約為200 erg/cm2 。極少出現退火孿晶,因此不符合本揭露材料的選擇條件。Annealing twinning mainly occurs in face centered cubic (FCC) crystalline materials with the most dense lattice arrangement. In addition to the face-centered cubic crystal structure condition, generally the smaller the stacking fault energy, the more prone to annealing twinning. For example, although aluminum is a face-centered cubic crystal structure material, its lamination energy is about 200 erg/cm 2 . Annealing twinning is rare and therefore does not qualify as a material of this disclosure.
此外,退火熱處理前的冷加工變形量亦為關鍵條件。 足夠的冷加工變形量所累積應變能可提供原子驅動力以產生退火孿晶。如果冷加工變形量太大,在退火熱處理初始再結晶(Primary Recrystallization)階段即會引發多數晶粒成核(Nuclei of Recrystallized Grains)。因此形成大量的微細晶粒,降低退火孿晶的產生機會,反而成為一般習知金屬線材的組織。In addition, the amount of cold working deformation before annealing heat treatment is also a key condition. The strain energy accumulated by sufficient cold working deformation can provide atomic driving force to generate annealing twins. If the amount of cold working deformation is too large, the nuclei of recrystallized grains (Nuclei of Recrystallized Grains) will be induced in the initial recrystallization (Primary Recrystallization) stage of the annealing heat treatment. Therefore, a large number of fine grains are formed, which reduces the chance of annealing twins, and instead becomes the structure of a generally known metal wire.
本說明書中所述「變形量」指的是因冷加工而對材料造成的截面積縮減率。The "deformation amount" in this specification refers to the reduction rate of the cross-sectional area of the material due to cold working.
孿晶晶粒的孿晶界(Twin Boundary)為調諧(Coherent)結晶構造,屬於低能量之Σ3特殊晶界,結晶方位均為{111}面。相較於一般退火再結晶所形成的高角度晶界,孿晶界的界面僅為一般高角度晶界的5%(請參考:George E.Dieter, Mechanical Metallurgy, McGRAW-HILL Book Company, 1976, P.135-141)。The twin boundary (Twin Boundary) of the twin grains is a tuned (Coherent) crystal structure, which belongs to the low-energy Σ3 special grain boundary, and the crystal orientations are all {111} planes. Compared with the high-angle grain boundary formed by general annealing and recrystallization, the interface of the twin boundary is only 5% of the general high-angle grain boundary (please refer to: George E. Dieter, Mechanical Metallurgy, McGRAW-HILL Book Company, 1976, p.135-141).
由於孿晶界較低的界面能,可以避免氧化、硫化及氯離子腐蝕。因此展現較佳的抗氧化性與耐腐蝕性。此外,此種孿晶之對稱晶格排列對電子傳輸的阻礙較小。因而展現較佳的導電性與導熱性。此一效應在銅導線已獲得證實(請參考:L.Lu, Y.Shen, X.Chen, L.Qian, and K.Lu, Ultrahigh Strength and High Electrical Conductivity in Copper, Science, vol.304, 2004, p.422-426)。Oxidation, sulfidation, and chloride ion corrosion can be avoided due to the lower interfacial energy of twin boundaries. Therefore, it exhibits better oxidation resistance and corrosion resistance. In addition, the symmetric lattice arrangement of such twins is less hindering electron transport. Thus exhibiting better electrical and thermal conductivity. This effect has been demonstrated in copper conductors (see: L.Lu, Y.Shen, X.Chen, L.Qian, and K.Lu, Ultrahigh Strength and High Electrical Conductivity in Copper, Science, vol.304, 2004 , p.422-426).
由於孿晶界較低的界面能,其孿晶界較一般高角度晶界穩定。不僅在高溫狀態孿晶界本身不易移動,也會對其所在晶粒之周圍的高角度晶界產生固鎖作用,使這些高角度晶界亦無法移動。因而整體晶粒不會有明顯晶粒成長現象。即使是打線接合過程第一接點(銲球點)從熔融狀態冷卻至室溫,也可以維持原有晶粒尺寸。亦即免除傳統微細晶粒結構之金屬線材經過打線接合後,銲球點凝固熱量在其附近線材累積,使其晶粒迅速成長而形成熱影響區,降低拉線試驗強度。Due to the lower interfacial energy of the twin boundary, the twin boundary is more stable than the general high-angle grain boundary. Not only is the twin grain boundary itself not easy to move at high temperature, but it also has a locking effect on the high-angle grain boundary around the grain where it is located, so that these high-angle grain boundaries cannot move. Therefore, the overall crystal grains will not have obvious grain growth phenomenon. The original grain size is maintained even when the first contact (solder ball point) is cooled from the molten state to room temperature during wire bonding. That is to say, after the wire bonding of the traditional fine-grained metal wire, the solidification heat of the solder balls accumulates in the wire near the wire, so that the grain grows rapidly to form a heat-affected zone, which reduces the strength of the wire drawing test.
由於原子經由低能量孿晶界跨越孿晶界的擴散速率較低。在使用電子產品時,高密度電流所伴隨線材內部原子移動也較為困難。如此解決金屬線材的電遷移問題。在銅薄膜已有報導證實孿晶可抑制材料電遷移現象(請參考:K.C.Chen, W.W.Wu, C.N.Liao, L.J.Chen, and K.N.Tu, Observation of Atomic Diffusion at Twin-Modified Grain Boundaries in Copper, Science, vol.321, 2008, p.1066-1069.)。The diffusion rate of atoms across the twin boundaries is low due to the low energy twin boundaries. When using electronic products, it is also difficult to move atoms inside the wire with high-density current. In this way, the electromigration problem of the metal wire is solved. Twin-modified Grain Boundaries in Copper, Science, vol.321, 2008, p.1066-1069.).
雖然本揭露之合金線材的晶粒略大於一般習知金線、銅線、鋁線與中華民國發明專利第I384082號銀合金的晶粒,但合金線材內的孿晶結構與其所在之晶粒具有不同結晶方位(Crystal Orientation)。因此可以阻擋差排(Dislocation)的移動,而產生材料強化效應。此強化機構不同於微細晶粒組織金屬線材,需仰賴高角度晶界阻擋差排移動,卻附帶引發其他不利於打線接合品質與可靠度的問題。Although the crystal grains of the alloy wire of the present disclosure are slightly larger than those of the conventional gold wire, copper wire, aluminum wire and the silver alloy of the Republic of China Invention Patent No. I384082, the twin crystal structure in the alloy wire and the crystal grain in which it is located have the same characteristics. Different crystal orientations (Crystal Orientation). Therefore, the movement of dislocation can be blocked, resulting in a material strengthening effect. This strengthening mechanism is different from the fine-grained metal wire, which relies on high-angle grain boundaries to block the dislocation movement, but it also causes other problems that are not conducive to the quality and reliability of wire bonding.
本揭露之合金線材可以維持與一般微細晶粒結構線材相近之拉伸強度。由於差排及原子可經由孿晶界跨移(Cross Slip),其可以有較高的延展性。孿晶雖可阻擋差排移動,但並不會過度阻擋電子傳輸。即使本揭露合金線材具有高強度,但仍保有其高導電性(電阻率低於2.5)與高導熱性,通電流測試亦展現優良的抗電遷移性及抗離子遷移性。The alloy wire of the present disclosure can maintain a tensile strength similar to that of the general fine-grained wire. It can have higher ductility due to the dislocation and the cross slip of atoms through the twin boundary. Although twinning can block dislocation movement, it does not excessively block electron transport. Even though the alloy wire of the present disclosure has high strength, it still maintains its high electrical conductivity (resistivity is lower than 2.5 ) and high thermal conductivity, the current test also showed excellent resistance to electromigration and ion migration.
然而,金屬線材中至少有20%數量以上的晶粒含有退火孿晶組織時,才會顯現上述特性。在習知打線接合用的金線、銅線或鋁線中,或許偶有孿晶組織,但是其孿晶密度通常在10%以下或甚至完全不含孿晶組織。However, the above characteristics will only appear when at least 20% of the grains in the metal wire contain annealing twins. In conventional gold, copper or aluminum wires for wire bonding, there may be occasional twinning structures, but the twinning density is usually below 10% or even completely free of twinning structures.
以上概述數個實施例之部件,以便在本發明所屬技術領域中具有通常知識者可更易理解本發明實施例的觀點。在本發明所屬技術領域中具有通常知識者應理解,他們能以本發明實施例為基礎,設計或修改其他製程和結構,以達到與在此介紹的實施例相同之目的及/或優勢。在本發明所屬技術領域中具有通常知識者也應理解到,此類等效的製程和結構並無悖離本發明的精神與範圍,且他們能在不違背本發明之精神和範圍之下,做各式各樣的改變、取代和替換。The components of several embodiments are summarized above so that those with ordinary knowledge in the technical field to which the present invention pertains can more easily understand the viewpoint of the embodiments of the present invention. Those skilled in the art to which the present invention pertains should appreciate that they can, based on the embodiments of the present invention, design or modify other processes and structures to achieve the same objectives and/or advantages of the embodiments described herein. Those with ordinary knowledge in the technical field to which the present invention pertains should also understand that such equivalent processes and structures do not depart from the spirit and scope of the present invention, and they can, without departing from the spirit and scope of the present invention, Make all kinds of changes, substitutions, and substitutions.
10:圓形合金線材
12,22:等軸晶粒
14,24:高角度晶界
16,26:孿晶晶粒
18,28:長條形晶粒
20:扁帶形合金線材10:
以下將配合所附圖示詳述本揭露之各面向。應注意的是,依據在業界的標準做法,各種特徵並未按照比例繪製且僅用以說明例示。事實上,可能任意地放大或縮小元件的尺寸,以清楚地表現出本揭露的特徵。 第1A圖係根據一些實施例,繪示圓形合金線材的一部分線段。 第1B圖係根據一些實施例,繪示沿著平行於第1A圖所示圓形合金線材的長度方向的縱切面圖。 第1C圖係根據一些實施例,繪示沿著垂直於第1A圖所示圓形合金線材的長度方向的橫截面圖。 第1D及1E圖係根據一些實施例,繪示第1B圖所示圓形合金線材中的等軸晶粒的分佈圖。 第2A圖係根據一些實施例,繪示扁帶形合金線材的一部分線段。 第2B圖係根據一些實施例,繪示沿著平行於第2A圖所示扁帶形合金線材的長度方向的縱切面圖。 第2C圖係根據一些實施例,繪示沿著垂直於第2A圖所示扁帶形合金線材的長度方向的橫截面圖。 第2D及2E圖係根據一些實施例,繪示第2B圖所示扁帶形合金線材中的等軸晶粒的分佈圖。Various aspects of the present disclosure will be described in detail below with reference to the accompanying drawings. It should be noted that, in accordance with standard practice in the industry, the various features are not drawn to scale and are illustrative only. In fact, the dimensions of elements may be arbitrarily enlarged or reduced to clearly represent the features of the present disclosure. FIG. 1A illustrates a portion of a segment of a circular alloy wire, according to some embodiments. FIG. 1B is a longitudinal section view along a direction parallel to the length of the circular alloy wire shown in FIG. 1A , according to some embodiments. FIG. 1C is a cross-sectional view along a direction perpendicular to the length of the circular alloy wire shown in FIG. 1A , according to some embodiments. Figures 1D and 1E illustrate the distribution of equiaxed grains in the round alloy wire shown in Figure 1B, according to some embodiments. FIG. 2A illustrates a portion of a wire segment of a ribbon-shaped alloy wire, according to some embodiments. FIG. 2B is a longitudinal section view along a direction parallel to the length of the ribbon-shaped alloy wire shown in FIG. 2A , according to some embodiments. FIG. 2C is a cross-sectional view along a direction perpendicular to the length of the ribbon-shaped alloy wire shown in FIG. 2A, according to some embodiments. FIGS. 2D and 2E illustrate distributions of equiaxed grains in the ribbon-shaped alloy wire shown in FIG. 2B according to some embodiments.
10:圓形合金線材10: Round alloy wire
12:等軸晶粒12: Equiaxed grains
14:高角度晶界14: High angle grain boundaries
16:孿晶晶粒16: Twin grains
18:長條形晶粒18: Elongated grains
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