TW202145615A - Sealed package and organic electroluminescent element comprising a first substrate, a second substrate arranged opposite to the first substrate, and a sealing layer arranged therebetween - Google Patents
Sealed package and organic electroluminescent element comprising a first substrate, a second substrate arranged opposite to the first substrate, and a sealing layer arranged therebetween Download PDFInfo
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- H—ELECTRICITY
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- H10K50/00—Organic light-emitting devices
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- H01L23/10—Containers; Seals characterised by the material or arrangement of seals between parts, e.g. between cap and base of the container or between leads and walls of the container
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Abstract
Description
本發明係關於一種密封封裝及有機電激發光元件。The present invention relates to a sealed package and an organic electroluminescent element.
有機EL顯示器(Organic Electro-Luminescence Display:OELD,有機電激發光顯示器)、電漿顯示面板(PDP)等平板型顯示裝置(FPD)具有藉由密封有一對玻璃基板之玻璃封裝來將發光元件封閉之構造。又,液晶顯示裝置(LCD)具有於一對玻璃基板間封閉有液晶之構造。進而,有機薄膜太陽電池或染料敏化型太陽電池等太陽電池具有於一對玻璃基板間封閉有太陽電池元件(光電轉換元件)之構造。Flat panel display devices (FPD) such as organic EL displays (Organic Electro-Luminescence Display: OELD), plasma display panels (PDP), etc. have a glass package sealed with a pair of glass substrates to seal light-emitting elements the structure. In addition, a liquid crystal display device (LCD) has a structure in which liquid crystal is sealed between a pair of glass substrates. Furthermore, a solar cell such as an organic thin film solar cell or a dye-sensitized solar cell has a structure in which a solar cell element (photoelectric conversion element) is sealed between a pair of glass substrates.
其中,有機EL顯示器會因與水分接觸而導致有機電激發光元件(有機EL元件)之發光特性顯著劣化,故需要嚴格地將有機EL元件與外部大氣阻隔。又,有機EL元件若暴露於高溫下則會受到損傷,故密閉方法極為重要。Among them, the organic EL display will significantly deteriorate the light-emitting characteristics of the organic electroluminescent element (organic EL element) due to contact with moisture, so the organic EL element needs to be strictly shielded from the outside atmosphere. In addition, since the organic EL element is damaged when exposed to high temperature, the sealing method is extremely important.
因此,作為有機EL顯示器之封閉方法,認為將玻璃粉末用於密封材料並藉由局部加熱進行封閉之方法較為有效。玻璃粉末係指將玻璃粉碎而獲得之玻璃粉末,通常將其與有機載劑混合,並進行漿料化後加以使用。藉由網版印刷或點膠等將該漿料塗佈於一玻璃基板上並進行燒接,形成預煅燒層。繼而,重疊另一玻璃基板,並藉由對預煅燒層使用雷射等進行局部加熱,使玻璃粉末熔融而實現密封。Therefore, as a sealing method of an organic EL display, the method of using glass powder as a sealing material and sealing by local heating is considered to be effective. The glass powder refers to a glass powder obtained by pulverizing glass, and it is usually used by mixing it with an organic vehicle and slurrying it. The paste is coated on a glass substrate by screen printing or dispensing, and then fired to form a pre-fired layer. Next, another glass substrate is stacked, and the pre-fired layer is locally heated by using a laser or the like to melt the glass powder to achieve sealing.
如此,作為密封材料所使用之玻璃,例如於專利文獻1中記載有用於封閉有機EL顯示器之TeO2 -ZnO-B2 O3 系玻璃。又,於專利文獻2中揭示有一種電子裝置,其具備一對玻璃基板及密封層,且於玻璃基板之內部產生與密封層之反應層,該反應層自與密封層之界面之最大深度為30 nm以上。 [先前技術文獻] [專利文獻]In this way, as the glass used as a sealing material, for example, Patent Document 1 describes a TeO 2 -ZnO-B 2 O 3- based glass for sealing an organic EL display. In addition, Patent Document 2 discloses an electronic device including a pair of glass substrates and a sealing layer, and a reaction layer with the sealing layer is generated inside the glass substrate, and the maximum depth of the reaction layer from the interface with the sealing layer is above 30 nm. [Prior Art Literature] [Patent Literature]
[專利文獻1]日本專利第6357937號公報 [專利文獻2]日本專利第5692218號公報[Patent Document 1] Japanese Patent No. 6357937 [Patent Document 2] Japanese Patent No. 5692218
[發明所欲解決之問題][Problems to be Solved by Invention]
近年來,有機電激發光元件亦用於智慧型手機或可穿戴終端等之顯示面板。隨著智慧型手機或可穿戴終端之需求提高,要求對使該等終端掉落之情形等時所產生之較強之衝擊具有較高之強度。In recent years, organic electroluminescent devices are also used in display panels of smart phones or wearable terminals. As the demand for smart phones or wearable terminals increases, higher strength is required for strong shocks generated when such terminals are dropped.
根據本發明人之研究,推測耐衝擊強度受密封層內所蓄積之熱應力、及基材與密封層之接著強度影響較大。熱應力主要於密封時將經加熱之密封材料於自玻璃轉移溫度附近冷卻至室溫之過程中,蓄積於密封層內。因此,若可降低玻璃轉移溫度以抑制熱應力,則可於低溫下密封,從而耐衝擊強度得以提昇。又,基材與密封層之接著強度對於實現較高之耐衝擊強度亦較為重要。According to the research of the present inventors, it is presumed that the impact resistance strength is greatly influenced by the thermal stress accumulated in the sealing layer and the adhesion strength between the base material and the sealing layer. The thermal stress is mainly accumulated in the sealing layer during the process of cooling the heated sealing material from around the glass transition temperature to room temperature during sealing. Therefore, if the glass transition temperature can be lowered to suppress thermal stress, it can be sealed at a low temperature, and the impact strength can be improved. In addition, the adhesion strength between the base material and the sealing layer is also important to achieve higher impact strength.
相對於此,專利文獻1所記載之玻璃之玻璃轉移溫度大致高達350℃以上。專利文獻2所記載之玻璃料由於軟化點溫度為420℃,故預測其玻璃轉移溫度亦較高。因此,低溫下之密封性仍有改善之餘地。On the other hand, the glass transition temperature of the glass described in patent document 1 is as high as 350 degreeC or more in general. Since the glass frit described in Patent Document 2 has a softening point temperature of 420° C., it is predicted that the glass transition temperature is also high. Therefore, the sealing performance at low temperature still has room for improvement.
本發明係鑒於上述情況所完成者,目的在於提供一種耐衝擊強度優異之密封封裝及有機電激發光元件。 [解決問題之技術手段]The present invention has been made in view of the above-mentioned circumstances, and an object of the present invention is to provide a hermetic package and an organic electroluminescent device which are excellent in impact resistance. [Technical means to solve problems]
本發明人發現藉由將玻璃轉移溫度為350℃以下之玻璃用作密封層,且使基材與密封層間之反應層之厚度處於適當範圍內,可實現低溫下之密封性及基材與密封層之較高之接著強度,從而完成本發明。The present inventors found that by using glass with a glass transition temperature of 350°C or lower as the sealing layer and keeping the thickness of the reaction layer between the substrate and the sealing layer within an appropriate range, the sealing performance at low temperatures and the sealing between the substrate and the sealing layer can be achieved The higher bonding strength of the layers is achieved, thereby completing the present invention.
即,本發明提供以下構成之密封封裝及有機電激發光元件。 [1]一種密封封裝,其具有:第1基板;第2基板,其與上述第1基板對向配置;及密封層,其配置於上述第1基板與上述第2基板之間,且將上述第1基板與上述第2基板接著;且 上述密封層包含玻璃組合物, 構成上述玻璃組合物之玻璃之玻璃轉移溫度為350℃以下, 形成上述第1基板及上述第2基板中之至少一者與上述密封層反應而成之反應層, 上述反應層之厚度為4 nm~25 nm。 [2]如上述[1]所記載之密封封裝,其中上述玻璃包含V2 O5 作為主成分。 [3]如上述[2]所記載之密封封裝,其中上述玻璃進而包含Bi2 O3 。 [4]如上述[1]至[3]中任一項所記載之密封封裝,其中上述玻璃組合物進而包含低膨脹填充劑及雷射吸收物質中之至少一者。 [5]如上述[1]至[4]中任一項所記載之密封封裝,其中上述第1基板及上述第2基板中之至少一者為玻璃基板。 [6]一種有機電激發光元件,其具備:第1基板;第2基板,其與上述第1基板對向配置;及密封層,其配置於上述第1基板與上述第2基板之間,且將上述第1基板與上述第2基板接著; 上述密封層包含玻璃組合物, 構成上述玻璃組合物之玻璃之玻璃轉移溫度為350℃以下, 形成上述第1基板及上述第2基板中之至少一者與上述密封層反應而成之反應層,且 上述反應層中之至少一者之厚度為4 nm~25 nm。 [7]如上述[6]所記載之有機電激發光元件,其中上述玻璃包含V2 O5 作為主成分。 [8]如上述[7]所記載之有機電激發光元件,其中上述玻璃進而包含Bi2 O3 。 [9]如上述[6]至[8]中任一項所記載之有機電激發光元件,其中上述玻璃組合物進而包含低膨脹填充劑及雷射吸收物質中之至少一者。 [10]如上述[6]至[9]中任一項所記載之有機電激發光元件,其中上述第1基板及上述第2基板中之至少一者為玻璃基板。 [發明之效果]That is, the present invention provides a hermetically sealed package and an organic electroluminescent device having the following structures. [1] A hermetic package comprising: a first substrate; a second substrate disposed opposite to the first substrate; and a sealing layer disposed between the first substrate and the second substrate, and wherein the The first substrate is bonded to the second substrate; the sealing layer includes a glass composition; the glass transition temperature of the glass constituting the glass composition is 350° C. or lower; at least one of the first substrate and the second substrate is formed For the reaction layer formed by reacting with the sealing layer, the thickness of the reaction layer is 4 nm to 25 nm. [2] The hermetic package according to the above [1], wherein the glass contains V 2 O 5 as a main component. [3] The hermetic package according to the above [2], wherein the glass further contains Bi 2 O 3 . [4] The hermetic package according to any one of the above [1] to [3], wherein the glass composition further comprises at least one of a low expansion filler and a laser absorbing substance. [5] The hermetic package according to any one of the above [1] to [4], wherein at least one of the first substrate and the second substrate is a glass substrate. [6] An organic electroluminescent element comprising: a first substrate; a second substrate disposed opposite to the first substrate; and a sealing layer disposed between the first substrate and the second substrate, and bonding the first substrate and the second substrate; the sealing layer includes a glass composition; the glass transition temperature of the glass constituting the glass composition is 350° C. or lower; and at least one of the first substrate and the second substrate is formed. One is a reaction layer formed by reacting with the sealing layer, and at least one of the reaction layers has a thickness of 4 nm to 25 nm. [7] The organic electroluminescent device according to the above [6], wherein the glass contains V 2 O 5 as a main component. [8] The organic electroluminescent device according to the above [7], wherein the glass further contains Bi 2 O 3 . [9] The organic electroluminescent device according to any one of the above [6] to [8], wherein the glass composition further comprises at least one of a low expansion filler and a laser absorbing substance. [10] The organic electroluminescent element according to any one of the above [6] to [9], wherein at least one of the first substrate and the second substrate is a glass substrate. [Effect of invention]
本發明之密封封裝及有機電激發光元件對掉落等之耐衝擊強度優異。The hermetically sealed package and the organic electroluminescent element of the present invention are excellent in impact resistance against drops and the like.
以下,對本發明之實施方式進行說明。再者,本發明並不限定於以下所說明之實施方式。又,於以下圖式中,對發揮相同作用之構件、部位會標註同一符號進行說明,且會省略或簡化重複之說明。又,為了清晰地說明本發明,圖式所記載之實施方式係以模式化之方式呈現,未必準確地表示實際之尺寸或比例尺。Hereinafter, embodiments of the present invention will be described. In addition, this invention is not limited to embodiment demonstrated below. In addition, in the following drawings, the same reference numerals are attached to the members and parts that perform the same functions, and the same reference numerals are used for description, and repeated descriptions are omitted or simplified. In addition, in order to explain the present invention clearly, the embodiments described in the drawings are presented in a modeled manner, and do not necessarily accurately represent the actual size or scale.
<密封封裝> 本實施方式之密封封裝具有第1基板、及與第1基板對向配置之第2基板,且於第1基板與第2基板之間,具有將該等基板接著之密封層。密封層包含玻璃組合物,構成玻璃組合物之玻璃之玻璃轉移溫度為350℃以下。又,於第1基板及第2基板中之至少一者與密封層之間,形成有其等反應而成之反應層,厚度為4 nm~25 nm。 於本說明書中,玻璃組合物係指包含玻璃之無機混合物。上述玻璃組合物亦可除玻璃以外還包含低膨脹填充劑及雷射吸收物質中之至少一者,亦可僅為玻璃。<Sealed package> The hermetic package of the present embodiment includes a first substrate and a second substrate arranged opposite to the first substrate, and has a sealing layer between the first substrate and the second substrate for adhering these substrates. The sealing layer contains a glass composition, and the glass transition temperature of the glass constituting the glass composition is 350° C. or lower. Furthermore, between at least one of the first substrate and the second substrate and the sealing layer, a reaction layer formed by reacting the same is formed, and the thickness is 4 nm to 25 nm. In this specification, a glass composition refers to an inorganic mixture comprising glass. The above-mentioned glass composition may contain, in addition to glass, at least one of a low-expansion filler and a laser absorbing substance, or may be only glass.
圖1及圖2係表示密封封裝之一實施方式之俯視圖及剖視圖。圖3A~圖3D係表示圖1所示之密封封裝之製造方法之一實施方式的步驟圖。圖4及圖5係製造圖1及圖2所示之密封封裝所使用之第1基板之俯視圖及剖視圖。圖6及圖7係製造圖1及圖2所示之密封封裝所使用之第2基板之俯視圖及剖視圖。1 and 2 are a plan view and a cross-sectional view showing an embodiment of a hermetic package. 3A to 3D are step diagrams showing one embodiment of the method of manufacturing the hermetic package shown in FIG. 1 . 4 and 5 are a plan view and a cross-sectional view of a first substrate used for manufacturing the hermetic package shown in FIGS. 1 and 2 . FIGS. 6 and 7 are a plan view and a cross-sectional view of a second substrate used for manufacturing the hermetic package shown in FIGS. 1 and 2 .
密封封裝10構成OELD、PDP、LCD等FPD、使用有機電激發光(OEL)元件等發光元件之照明裝置(OEL照明等)、或諸如染料敏化型太陽電池之類之太陽電池等。
即,密封封裝10具有:第1基板11;第2基板12,其與第1基板對向配置;及密封層15,其配置於第1基板11與第2基板12之間,且將第1基板與第2基板接著。又,密封層15包含玻璃組合物,構成玻璃組合物之玻璃之玻璃轉移溫度為350℃以下。The
第1基板11例如為主要供設置電子元件部13之元件基板。第2基板12例如為主要用於封閉之封閉基板。於第1基板11設置電子元件部13。第1基板11與第2基板12彼此對向配置,且藉由呈框狀地配置於該等之間之密封層15而接著。The
於第1基板11及第2基板12中之至少一者與密封層15之間,形成有基板與密封層反應而成之反應層(未圖示)。反應層之厚度為4 nm~25 nm。關於密封層及反應層,將於下文進行敍述。Between at least one of the
第1基板11、第2基板12並無特別限定,只要二者中之至少一者可形成與密封層之反應層即可,要想雷射之透過性優異,且可有效率地加熱密封層,較佳為玻璃基板。關於玻璃基板,更佳為使用鈉鈣玻璃基板、無鹼玻璃基板等。 關於鈉鈣玻璃基板,例如可例舉:AS、PD200(均為AGC公司製造,商品名),或對該等進行化學強化所得者。 關於無鹼玻璃基板,例如可例舉:AN100(AGC公司製造,商品名)、EAGEL2000(康寧公司製造,商品名)、EAGEL GX(康寧公司製造,商品名)、JADE(康寧公司製造,商品名)、#1737(康寧公司製造,商品名)、OA-10(日本電氣硝子公司製造,商品名)、TEMPAX(肖特公司製造,商品名)等。 第1基板11與第2基板12可使用相同基板,亦可使用不同基板。The
關於電子元件部13,例如於OELD或OEL照明之情形時,具有OEL元件;於PDP之情形時,具有電漿發光元件;於LCD之情形時,具有液晶顯示元件;於太陽電池之情形時,具有染料敏化型太陽電池元件、即染料敏化型光電轉換部元件。電子元件部13可採用各種公知之構造,並不限定於圖示之構造。Regarding the
於圖1及圖2之密封封裝10中,於第1基板11設置有OEL元件、電漿發光元件等作為電子元件部13。於電子元件部13為染料敏化型太陽電池元件等之情形時,於第1基板11及第2基板12各自之對向面設置配線膜或電極膜等元件膜,但對此未進行圖示。In the
於電子元件部13為OEL元件等之情形時,第1基板11與第2基板12之間殘存一部分空間。該空間可保留原本之狀態,亦可填充透明樹脂等。透明樹脂與第1基板11及第2基板12可接著,亦可僅接觸。When the
於電子元件部13為染料敏化型太陽電池元件等之情形時,第1基板11與第2基板12之間整體配置電子元件部13,但對此未進行圖示。再者,封閉對象並不限定於電子元件部13,亦可為光電轉換裝置等。又,密封封裝10亦可為諸如不具有電子元件部13之複層玻璃之類之建築材料。When the
[密封層] 本實施方式中之密封層包含玻璃組合物,構成玻璃組合物之玻璃之玻璃轉移溫度為350℃以下。以下,將該玻璃稱為「低熔點玻璃」。[Sealing Layer] The sealing layer in this embodiment contains a glass composition, and the glass transition temperature of the glass constituting the glass composition is 350° C. or lower. Hereinafter, this glass is referred to as "low melting point glass".
玻璃組合物藉由包含低熔點玻璃,可於低溫下形成密封層。因此,可抑制於密封時將經加熱之密封材料自玻璃轉移溫度附近冷卻至室溫之過程中所蓄積之熱應力。其結果,可提昇所獲得之密封封裝之耐衝擊強度。The glass composition can form a sealing layer at low temperature by including low-melting glass. Therefore, the thermal stress accumulated in the process of cooling the heated sealing material from the vicinity of the glass transition temperature to room temperature at the time of sealing can be suppressed. As a result, the impact resistance of the obtained hermetic package can be improved.
低熔點玻璃之玻璃轉移溫度(Tg)只要為350℃以下即可,基於獲得更良好之低溫密封性之觀點,Tg較佳為340℃以下,進而較佳為330℃以下。玻璃轉移溫度之下限並無特別限定,較佳為290℃以上。藉由將玻璃轉移溫度設為290℃以上,可於將包含樹脂之有機載劑與玻璃組合物混合而製成玻璃漿料之情形時,防止於去除樹脂之前玻璃軟化而樹脂殘留於密封層。 再者,低熔點玻璃之玻璃轉移溫度(Tg)係使用示差熱分析裝置進行測定,將第1反曲點設為玻璃轉移溫度。The glass transition temperature (Tg) of the low-melting glass should just be 350°C or lower, and Tg is preferably 340°C or lower, more preferably 330°C or lower, from the viewpoint of obtaining better low-temperature sealing properties. The lower limit of the glass transition temperature is not particularly limited, but is preferably 290°C or higher. By setting the glass transition temperature to be 290° C. or higher, when an organic vehicle containing a resin is mixed with a glass composition to form a glass paste, the glass can be prevented from softening and the resin remaining in the sealing layer before the resin is removed. Furthermore, the glass transition temperature (Tg) of the low-melting glass was measured using a differential thermal analyzer, and the first inflection point was set as the glass transition temperature.
作為構成低熔點玻璃之材料之玻璃可為1種,亦可為2種以上。 於低熔點玻璃包含1種玻璃之情形時,只要該玻璃之玻璃轉移溫度處於上述範圍內即可。 於作為構成低熔點玻璃之材料之玻璃為2種以上之情形時,所獲得之低熔點玻璃之玻璃轉移溫度(Tg)可使用示差熱分析裝置進行測定,並根據第1反曲點進行估算,只要該玻璃轉移溫度處於上述範圍內即可。One kind of glass may be sufficient as the material which comprises a low melting point glass, and two or more types may be sufficient as it. When the low-melting glass includes one kind of glass, the glass transition temperature of the glass should be within the above-mentioned range. In the case where there are two or more kinds of glass as the material constituting the low-melting glass, the glass transition temperature (Tg) of the obtained low-melting glass can be measured using a differential thermal analyzer, and estimated from the first inflection point, The glass transition temperature should just be in the said range.
於作為構成低熔點玻璃之材料之玻璃為2種以上之情形時,相對於作為構成低熔點玻璃之材料之玻璃之合計量,作為玻璃轉移溫度為350℃以下之材料之玻璃之合計含量因各玻璃之玻璃轉移溫度之高低不同,而無法唯一地確定,但較佳為80體積%以上,更佳為85體積%以上。合計含量之上限並無特別限定,亦可作為材料之所有玻璃之玻璃轉移溫度均為350℃以下,即合計含量為100體積%。In the case where there are two or more types of glass as the material constituting the low-melting glass, the total content of the glass as the material whose glass transition temperature is 350°C or lower relative to the total amount of the glass as the material constituting the low-melting glass depends on each The glass transition temperature of the glass varies and cannot be uniquely determined, but it is preferably 80% by volume or more, more preferably 85% by volume or more. The upper limit of the total content is not particularly limited, and the glass transition temperature of all the glasses that can be used as materials is 350° C. or lower, that is, the total content is 100% by volume.
低熔點玻璃若具有上述特性,其組成便並無特別限定,但較佳為包含V2 O5 作為主成分。V2 O5 係玻璃形成氧化物,且係形成玻璃之網狀結構並且實現較低之玻璃轉移溫度之成分。又,作為雷射吸收成分亦較為有效。 再者,於本說明書中,主成分係指構成玻璃之成分中以氧化物基準之莫耳%表示含量最多之成分。又,於作為構成低熔點玻璃之材料之玻璃為2種以上之情形時,根據各玻璃之以氧化物基準之莫耳%表示所示之組成、及其等之含有比率(體積%)決定低熔點玻璃之組成。 具體而言,V2 O5 之含量較佳為10%以上,更佳為20%以上,進而較佳為25%以上,進而更佳為30%以上。又,基於防止耐水性降低或防止玻璃製造時玻璃穩定性降低而玻璃變得容易失透之觀點,V2 O5 之含量較佳為50%以下,更佳為45%以下,進而較佳為40%以下,進而更佳為35%以下。The composition of the low-melting glass is not particularly limited as long as it has the above-mentioned properties, but it preferably contains V 2 O 5 as a main component. V 2 O 5 is a glass-forming oxide, and is a component that forms the network structure of the glass and achieves a lower glass transition temperature. Moreover, it is also effective as a laser absorption component. In addition, in this specification, the main component refers to the component whose content is the largest in terms of molar % based on oxide among the components constituting the glass. In addition, when there are two or more kinds of glass as the material constituting the low-melting glass, the lower melting point is determined based on the composition indicated by the molar % on the oxide basis and the content ratio (volume %) of each glass. Composition of melting point glass. Specifically, the content of V 2 O 5 is preferably 10% or more, more preferably 20% or more, still more preferably 25% or more, and still more preferably 30% or more. In addition, from the viewpoint of preventing the water resistance from being lowered or the glass stability from being lowered and the glass becoming easily devitrified during glass production, the content of V 2 O 5 is preferably 50% or less, more preferably 45% or less, and still more preferably 40% or less, more preferably 35% or less.
低熔點玻璃較佳為進而包含Bi2 O3 。於尤其使用玻璃基板作為基板之情形時,Bi2 O3 於密封層形成時,容易與玻璃基板發生反應,而容易形成反應層。藉由該反應層,接著強度提昇,可獲得密封封裝之更良好之耐衝擊強度。 具體而言,Bi2 O3 之含量較佳為0.5%以上,更佳為1.0%以上,進而較佳為1.5%以上,進而更佳為2.0%以上。又,基於維持良好之低溫密封性之觀點,Bi2 O3 之含量較佳為20.0%以下,更佳為15.0%以下,進而較佳為10.0%以下,進而更佳為7.0%以下。The low-melting glass preferably further contains Bi 2 O 3 . In particular, when a glass substrate is used as a substrate, Bi 2 O 3 easily reacts with the glass substrate when the sealing layer is formed, so that the reaction layer is easily formed. With the reaction layer, the subsequent strength is increased, and better impact resistance strength of the hermetic package can be obtained. Specifically, the content of Bi 2 O 3 is preferably 0.5% or more, more preferably 1.0% or more, still more preferably 1.5% or more, and still more preferably 2.0% or more. Moreover, from the viewpoint of maintaining good low-temperature sealing properties, the content of Bi 2 O 3 is preferably 20.0% or less, more preferably 15.0% or less, still more preferably 10.0% or less, and still more preferably 7.0% or less.
(低熔點玻璃) 以下,對成為密封層之玻璃組合物所含之低熔點玻璃之組成的一實施方式進行說明。再者,組成並不限定於下述,並無特別限定,只要玻璃轉移溫度處於上述範圍內,且可與基板形成適當厚度之反應層即可。又,於作為構成低熔點玻璃之材料之玻璃為2種以上之情形時,只要根據各玻璃之以氧化物基準之莫耳%表示所示之組成、及其等之含有比率(體積%)所決定的組成(以下稱為「平均組成」)如下所述即可。(Low-melting glass) Hereinafter, one embodiment of the composition of the low-melting glass contained in the glass composition serving as the sealing layer will be described. In addition, the composition is not limited to the following, and is not particularly limited as long as the glass transition temperature is within the above-mentioned range, and a reaction layer with an appropriate thickness can be formed with the substrate. In addition, when there are two or more kinds of glass as the material constituting the low-melting glass, it is only necessary that the composition shown by the molar % on the oxide basis of each glass and the content ratio (volume %) of the same are determined. The determined composition (hereinafter referred to as "average composition") may be as follows.
本實施方式中之低熔點玻璃較佳為實質上不含有鹼金屬氧化物,且以氧化物基準之莫耳%表示,含有10.0~50.0%之V2 O5 ,14.5~45.0%之TeO2 ,5.0~45.0%之ZnO,且含有0.5~20.0%之Bi2 O3 。 於以下各成分之說明中,只要無特別說明,低熔點玻璃之各成分之含量中之「%」之表示便為氧化物基準、即以氧化物換算之莫耳%表示。The low-melting glass in this embodiment preferably does not substantially contain alkali metal oxides, and contains 10.0-50.0% of V 2 O 5 , 14.5-45.0% of TeO 2 in molar % based on oxides, 5.0-45.0% of ZnO, and 0.5-20.0% of Bi 2 O 3 . In the description of each component below, unless otherwise specified, the "%" in the content of each component in the low-melting glass is based on oxides, that is, expressed in molar % in terms of oxides.
若低熔點玻璃含有鹼金屬氧化物,則於密封時或密封後,密封材料暴露於高溫下時,有鹼性成分擴散至基板等被密封材料中,導致被密封構件劣化之虞。因此,低熔點玻璃較佳為實質上不含有鹼金屬氧化物。再者,實質上不含有意指除不可避免之雜質以外並不含有,即,意指並未刻意地添加。 因此,低熔點玻璃可含有微量之作為不可避雜質之鹼金屬氧化物。低熔點玻璃中之鹼金屬氧化物之含量較佳為1000 ppm以下,更佳為500 ppm以下。 再者,於本說明書中,鹼金屬氧化物意指Li2 O、Na2 O及K2 O,鹼金屬氧化物之含量意指該等之合計含量。又,ppm意指質量ppm。When the low-melting glass contains an alkali metal oxide, when the sealing material is exposed to high temperature during or after sealing, the alkali component may diffuse into the sealing material such as the substrate, and the sealing member may be deteriorated. Therefore, it is preferable that the low-melting glass does not substantially contain an alkali metal oxide. In addition, "substantially free" means that it is not contained except for unavoidable impurities, that is, it means that it is not intentionally added. Therefore, the low-melting glass may contain a trace amount of alkali metal oxide as an unavoidable impurity. The content of the alkali metal oxide in the low-melting glass is preferably 1000 ppm or less, more preferably 500 ppm or less. In addition, in this specification, the alkali metal oxide means Li 2 O, Na 2 O and K 2 O, and the content of the alkali metal oxide means the total content of these. In addition, ppm means mass ppm.
V2 O5 係玻璃形成氧化物,形成玻璃之網狀結構,並且為低軟化成分即降低玻璃轉移溫度之成分,故較佳為包含於低熔點玻璃中。又,V2 O5 作為雷射吸收成分亦屬有效。如此,由於降低玻璃轉移溫度會使低溫密封性優異,且獲得高耐衝擊強度,故較佳為含有V2 O5 作為主成分。又,V2 O5 之含量較佳為10.0%以上,更佳為15.0%以上,進而較佳為20.0%以上,進而更佳為25.0%以上。 基於防止耐水性降低且防止玻璃製造時玻璃穩定性降低而玻璃變得容易失透之觀點,V2 O5 之含量較佳為50.0%以下,更佳為45.0%以下,進而較佳為40.0%以下,進而更佳為35.0%以下。V 2 O 5 is a glass-forming oxide that forms a glass network structure, and is a low-softening component, that is, a component that lowers the glass transition temperature, so it is preferably contained in the low-melting glass. In addition, V 2 O 5 is also effective as a laser absorbing component. As described above, it is preferable to contain V 2 O 5 as a main component because the low-temperature sealing performance is excellent by lowering the glass transition temperature and high impact strength is obtained. Moreover, the content of V 2 O 5 is preferably 10.0% or more, more preferably 15.0% or more, still more preferably 20.0% or more, and still more preferably 25.0% or more. The content of V 2 O 5 is preferably 50.0% or less, more preferably 45.0% or less, and still more preferably 40.0% from the viewpoint of preventing water resistance from decreasing and glass stability from decreasing and glass becoming devitrified easily during glass production. Below, more preferably, it is 35.0% or less.
TeO2 係玻璃氧化物,形成玻璃網狀結構,並且為低軟化成分,故較佳為包含於低熔點玻璃中。基於藉由降低玻璃轉移溫度而使低溫密封性提昇且防止煅燒密封時之結晶化之觀點,TeO2 之含量較佳為14.5%以上,更佳為16.0%以上,進而較佳為18.0%以上,進而更佳為20.0%以上。又,基於防止熱膨脹係數變得過大之觀點,TeO2 之含量較佳為45.0%以下,更佳為40.0%以下,進而較佳為35.0%以下,進而更佳為30.0%以下。TeO 2 is a glass oxide that forms a glass network structure and is a low softening component, so it is preferably contained in a low melting point glass. From the viewpoint of improving low-temperature sealing properties and preventing crystallization during calcination and sealing by lowering the glass transition temperature, the content of TeO 2 is preferably 14.5% or more, more preferably 16.0% or more, and more preferably 18.0% or more, More preferably, it is 20.0% or more. Moreover, from the viewpoint of preventing the thermal expansion coefficient from becoming too large, the content of TeO 2 is preferably 45.0% or less, more preferably 40.0% or less, still more preferably 35.0% or less, and still more preferably 30.0% or less.
較佳為含有ZnO作為使熱膨脹係數降低之成分。ZnO之含量較佳為5.0%以上,更佳為10.0%以上,進而較佳為15.0%以上,進而更佳為20.0%以上。另一方面,基於防止玻璃製造時玻璃穩定性降低而玻璃失透之觀點,ZnO之含量較佳為45.0%以下,更佳為40.0%以下,進而較佳為35.0%以下,進而更佳為30.0%以下。It is preferable to contain ZnO as a component which lowers a thermal expansion coefficient. The content of ZnO is preferably 5.0% or more, more preferably 10.0% or more, still more preferably 15.0% or more, and still more preferably 20.0% or more. On the other hand, the content of ZnO is preferably 45.0% or less, more preferably 40.0% or less, more preferably 35.0% or less, and still more preferably 30.0%, from the viewpoint of preventing glass stability from decreasing and glass devitrification during glass production. %the following.
Bi2 O3 係於密封時容易與基板發生反應而藉由形成反應層使接著強度提昇之成分。因此,Bi2 O3 對本實施方式之低熔點玻璃而言有所重要,較佳為與V2 O5 一併包含於低熔點玻璃中。藉由將Bi2 O3 之含量設為一定量以上,可充分獲得接著強度提昇之效果。另一方面,藉由將Bi2 O3 之含量設為一定量以下,玻璃轉移溫度不會變得過高,而可維持良好之低溫密封性。進而,於基板為玻璃基板之情形時,可抑制與玻璃基板過度地發生反應,而將玻璃基板中之SiO2 等高熔點成分引入至玻璃組合物中。其結果,固著點不會上升,從而防止密封後之密封層之殘留應力變大。Bi 2 O 3 is a component that easily reacts with the substrate during sealing to improve the bonding strength by forming a reaction layer. Therefore, Bi 2 O 3 is important for the low-melting glass of the present embodiment, and it is preferable to include it in the low-melting glass together with V 2 O 5 . By setting the content of Bi 2 O 3 to a certain amount or more, the effect of improving the bonding strength can be sufficiently obtained. On the other hand, by making the content of Bi 2 O 3 less than or equal to a certain amount, the glass transition temperature does not become too high, and favorable low-temperature sealing properties can be maintained. Furthermore, when the substrate is a glass substrate, excessive reaction with the glass substrate can be suppressed, and high melting point components such as SiO 2 in the glass substrate can be introduced into the glass composition. As a result, the anchor point does not rise, and the residual stress of the sealing layer after sealing is prevented from increasing.
於使用V2 O5 -TeO2 -ZnO系玻璃作為低熔點玻璃之情形時,可於維持低溫密封性之狀態下提昇接著強度之Bi2 O3 之較佳之含量為0.5~20.0%。Bi2 O3 之含量更佳為1.0%以上,進而較佳為1.5%以上,進而更佳為2.0%以上,又,更佳為15.0%以下,進而較佳為10.0%以下,進而更佳為7.0%以下。In the case of using V 2 O 5 -TeO 2 -ZnO glass as the low melting point glass, the preferable content of Bi 2 O 3 which can improve the bonding strength while maintaining the low temperature sealing property is 0.5-20.0%. The content of Bi 2 O 3 is more preferably 1.0% or more, more preferably 1.5% or more, still more preferably 2.0% or more, and more preferably 15.0% or less, still more preferably 10.0% or less, and still more preferably 7.0% or less.
於以V2 O5 作為主成分且進而含有Bi2 O3 之低熔點玻璃中,基於可抑制煅燒密封時之結晶化而使玻璃穩定化之觀點,以V2 O5 /TeO2 表示之V2 O5 與TeO2 之含量之比較佳為0.5以上,更佳為1.0以上,又,較佳為2.5以下,更佳為2.0以下。In the low-melting glass containing V 2 O 5 as a main component and further containing Bi 2 O 3 , from the viewpoint of stabilizing the glass by suppressing crystallization during firing and sealing, V represented by V 2 O 5 /TeO 2 The ratio of the content of 2 O 5 to TeO 2 is preferably 0.5 or more, more preferably 1.0 or more, and more preferably 2.5 or less, more preferably 2.0 or less.
CuO係具有降低熱膨脹係數之效果之成分,且具有提昇耐水性之效果,故較佳為包含於低熔點玻璃中。進而,CuO作為雷射吸收成分亦較為有效。藉由含有CuO,可於形成密封層時製作玻璃漿料時,減少為了雷射吸收而含有之顏料之添加量,並取而代之地較多含有低膨脹填料。藉此,可獲得熱膨脹係數更低之玻璃漿料。基於上述觀點,CuO之含量較佳為1.0%以上,更佳為2.0%以上,進而較佳為5.0%以上。另一方面,基於防止於煅燒密封時玻璃結晶化之觀點,CuO之含量較佳為10.0%以下,更佳為8.0%以下,進而較佳為7.5%以下。CuO is a component which has the effect of lowering the thermal expansion coefficient and has the effect of improving the water resistance, so it is preferably contained in the low-melting glass. Furthermore, CuO is also effective as a laser absorbing component. By containing CuO, the amount of pigment added for laser absorption can be reduced when the glass paste is formed when the sealing layer is formed, and instead, more low-expansion fillers can be contained. Thereby, glass paste with a lower thermal expansion coefficient can be obtained. From the above viewpoints, the content of CuO is preferably 1.0% or more, more preferably 2.0% or more, and still more preferably 5.0% or more. On the other hand, from the viewpoint of preventing glass crystallization during firing and sealing, the content of CuO is preferably 10.0% or less, more preferably 8.0% or less, and still more preferably 7.5% or less.
Fe2 O3 作為雷射吸收成分亦較為有效,故亦可包含於低熔點玻璃中。藉由含有Fe2 O3 ,可於製作玻璃漿料時,減少為了雷射吸收而含有之顏料之添加量,並取而代之地較多含有低膨脹填料。藉此,可獲得熱膨脹係數更低之玻璃漿料。基於上述觀點,Fe2 O3 之含量較佳為1.0%以上。但是,若已含有CuO或MnO,則即便不含有Fe2 O3 亦可獲得上述效果。另一方面,基於防止於煅燒密封時玻璃結晶化,進而抑制低溫密封性隨著玻璃轉移溫度上升而降低之觀點,Fe2 O3 之含量較佳為7.0%以下,更佳為5.0%以下,進而較佳為2.0%以下。Fe 2 O 3 is also effective as a laser absorbing component, so it can also be included in the low-melting glass. By containing Fe 2 O 3 , it is possible to reduce the amount of pigments added for laser absorption when making glass paste, and instead, contain more low-expansion fillers. Thereby, glass paste with a lower thermal expansion coefficient can be obtained. From the above viewpoints, the content of Fe 2 O 3 is preferably 1.0% or more. However, if CuO or MnO is already contained, even if Fe 2 O 3 is not contained, the above-mentioned effects can be obtained. On the other hand, the content of Fe 2 O 3 is preferably 7.0% or less, more preferably 5.0% or less, from the viewpoint of preventing glass crystallization during firing and sealing, and further suppressing a decrease in low-temperature sealing properties as the glass transition temperature rises. More preferably, it is 2.0% or less.
MnO係作為雷射吸收成分較為有效之成分,故亦可包含於低熔點玻璃中。藉由含有MnO,可於製作玻璃漿料時,減少為了雷射吸收而含有之顏料之添加量,並取而代之地較多含有低膨脹填料。藉此,可獲得熱膨脹係數更低之玻璃漿料。基於上述觀點,MnO之含量較佳為1.0%以上。但是,若已含有CuO或Fe2 O3 ,則即便不含有MnO亦可獲得上述效果。另一方面,基於防止於煅燒密封時玻璃結晶化之觀點,MnO之含量較佳為7.0%以下,更佳為5.0%以下,進而較佳為2.0%以下。MnO is an effective component as a laser absorbing component, so it can also be included in low melting glass. By containing MnO, it is possible to reduce the addition amount of pigments for laser absorption when making glass paste, and to contain more low-expansion fillers instead. Thereby, glass paste with a lower thermal expansion coefficient can be obtained. From the above viewpoints, the content of MnO is preferably 1.0% or more. However, if CuO or Fe 2 O 3 is already contained, the above-mentioned effects can be obtained even if MnO is not contained. On the other hand, from the viewpoint of preventing glass crystallization during firing and sealing, the content of MnO is preferably 7.0% or less, more preferably 5.0% or less, and still more preferably 2.0% or less.
基於較佳地獲得雷射吸收之效果之觀點,(CuO+Fe2 O3 +MnO)所表示之CuO、Fe2 O3 及MnO之含量之合計較佳為1.0%以上,更佳為2.0%以上,進而較佳為4.0%以上,進而更佳為5.0%以上。又,要想避免於雷射煅燒密封時玻璃結晶化,該含量之合計較佳為10.0%以下,更佳為8.0%以下,進而較佳為7.5%以下。From the viewpoint of obtaining a better laser absorption effect, the total content of CuO, Fe 2 O 3 and MnO represented by (CuO+Fe 2 O 3 +MnO) is preferably 1.0% or more, more preferably 2.0% or more, and further It is preferably 4.0% or more, and more preferably 5.0% or more. Moreover, in order to avoid glass crystallization at the time of laser firing and sealing, the total of the content is preferably 10.0% or less, more preferably 8.0% or less, and still more preferably 7.5% or less.
CuO、Fe2 O3 及MnO均為作為雷射吸收成分較為有效之成分。要想於由該雷射吸收產生之低溫密封性之效果與避免玻璃結晶化之間取得平衡,該等成分中,較佳為較多含有CuO。具體而言,{CuO/(CuO+Fe2 O3 +MnO)}所表示之CuO之含量相對於CuO、Fe2 O3 及MnO之含量之合計之比較佳為30%以上(0.3以上),更佳為50%以上(0.5以上),進而較佳為70%以上(0.7以上)。又,上述比亦可為100%,即亦可僅含有CuO。CuO, Fe 2 O 3 and MnO are all relatively effective components as laser absorbing components. In order to strike a balance between the effect of the low temperature sealing property by the laser absorption and the avoidance of glass crystallization, it is preferable to contain a large amount of CuO among these components. Specifically, the ratio of the CuO content represented by {CuO/(CuO+Fe 2 O 3 +MnO)} to the total content of CuO, Fe 2 O 3 and MnO is preferably 30% or more (0.3 or more), more preferably 50% or more (0.5 or more), more preferably 70% or more (0.7 or more). Moreover, the said ratio may be 100%, that is, only CuO may be contained.
B2 O3 係玻璃氧化物,且係形成玻璃網狀結構而提昇玻璃穩定性之成分,故較佳為包含於低熔點玻璃中。於含有B2 O3 之情形時,其含量較佳為0.5%以上,更佳為1.0%以上,進而較佳為1.5%以上。另一方面,基於避免因過剩地含有導致玻璃不穩定而於煅燒密封時容易結晶化之觀點,B2 O3 之含量較佳為10.0%以下,更佳為7.5%以下,進而較佳為5.0%以下。B 2 O 3 is a glass oxide, and is a component that forms a glass network structure to improve glass stability, so it is preferably contained in a low-melting glass. When the case containing B 2 O 3, the content thereof is preferably 0.5% or more, more preferably 1.0% or more, and further preferably 1.5% or more. On the other hand, the content of B 2 O 3 is preferably 10.0% or less, more preferably 7.5% or less, and still more preferably 5.0% from the viewpoint of preventing the glass from being unstable due to excessive content and being easily crystallized during firing and sealing. %the following.
BaO係對於玻璃穩定化較為有效之成分,故可包含於低熔點玻璃中。於包含於低熔點玻璃中之情形時,BaO之含量較佳為2.0%以上。另一方面,要想使玻璃轉移溫度或熱膨脹係數保持在適當範圍內,BaO之含量較佳為10.0%以下,更佳為8.0%以下。BaO is a relatively effective component for glass stabilization, so it can be contained in low-melting glass. When contained in a low-melting glass, the content of BaO is preferably 2.0% or more. On the other hand, in order to keep the glass transition temperature or the thermal expansion coefficient within an appropriate range, the content of BaO is preferably 10.0% or less, more preferably 8.0% or less.
Al2 O3 及Nb2 O5 具有降低膨脹係數之效果,又,具有提昇耐水性之效果,故亦可各自包含於低熔點玻璃中。於包含於低熔點玻璃中之情形時,Al2 O3 及Nb2 O5 之含量各自較佳為2.0%以上。另一方面,要想使玻璃轉移溫度保持在適當範圍內,Al2 O3 及Nb2 O5 之含量各自較佳為10.0%以下,更佳為8.0%以下。Al 2 O 3 and Nb 2 O 5 have the effect of lowering the expansion coefficient and also have the effect of improving the water resistance, so they may be contained in the low-melting glass. When contained in a low-melting glass, the content of Al 2 O 3 and Nb 2 O 5 is preferably 2.0% or more, respectively. On the other hand, in order to keep the glass transition temperature within an appropriate range, the content of Al 2 O 3 and Nb 2 O 5 is preferably 10.0% or less, and more preferably 8.0% or less.
(V2
O5
+TeO2
+ZnO)所表示之V2
O5
、TeO2
及ZnO之含量之合計為78.0~89.0%,且(Al2
O3
+Nb2
O5
)所表示之Al2
O3
及Nb2
O5
之含量之合計較佳為5.0~11.0%。若處於上述範圍內,則容易兼顧耐水性與玻璃之穩定化。又,基於同樣之理由,(V2
O5
+TeO2
+ZnO)更佳為79.0%以上,又,更佳為88.0%以下。此外,(Al2
O3
+Nb2
O5
)進而較佳為6.0%以上,又,進而較佳為10.0%以下。Represented by the (V 2 O 5 + TeO 2 + ZnO) V 2
低熔點玻璃亦可於不損及本發明之目的之範圍內,含有除上述成分以外之成分(以下稱為「其他成分」)。其他成分之合計含量較佳為10.0%以下。The low-melting glass may contain components other than the above-mentioned components (hereinafter referred to as "other components") within a range that does not impair the purpose of the present invention. The total content of other components is preferably 10.0% or less.
關於其他成分,可例舉:CaO、TiO2 、ZrO2 、CeO2 、La2 O3 、CoO、MoO3 、Sb2 O3 、WO3 、GeO2 等。The other components include: CaO, TiO 2, ZrO 2 , CeO 2, La 2 O 3, CoO, MoO 3, Sb 2 O 3, WO 3, GeO 2 and the like.
又,基於減輕對環境之負荷之觀點,低熔點玻璃較佳為實質上不含有鉛,即實質上不含有PbO。Moreover, from the viewpoint of reducing the load on the environment, it is preferable that the low-melting glass does not contain substantially lead, that is, substantially does not contain PbO.
(密封層之製造方法) 密封層包含玻璃組合物,構成玻璃組合物之玻璃係低熔點玻璃。密封層之製造方法並無特別限定,例如可藉由以下所示之方法製造。(Manufacturing method of sealant layer) The sealant layer contains a glass composition, and the glass constituting the glass composition is low-melting glass. The manufacturing method of a sealing layer is not specifically limited, For example, it can manufacture by the method shown below.
首先,準備原料混合物。原料並無特別限定,只要為通常製造氧化物系玻璃所使用之原料即可,可使用氧化物或碳酸鹽等。適當調整原料之種類及比率以使所獲得之玻璃之組成處於上述範圍內,從而製成原料混合物。First, prepare the stock mixture. The raw material is not particularly limited, as long as it is a raw material usually used for the production of oxide-based glass, and oxides, carbonates, and the like can be used. The kinds and ratios of the raw materials are appropriately adjusted so that the composition of the obtained glass falls within the above-mentioned range, thereby producing a raw material mixture.
於成為低熔點玻璃之材料之玻璃為組成不同之2種以上的情形時,組成不同之玻璃之各自之組成並無特別限定,只要適當選擇原料之種類及比率、玻璃之組合等以使其等之平均組成處於上述範圍內即可。In the case where two or more kinds of glasses with different compositions are used as the material of the low-melting glass, the respective compositions of the glasses with different compositions are not particularly limited, as long as the kinds and ratios of raw materials, the combination of glasses, etc. are appropriately selected so as to be suitable. The average composition may be within the above range.
藉由公知之方法對原料混合物加熱而獲得熔融物。加熱熔融之溫度(熔融溫度)較佳為1000~1200℃,更佳為1050℃以上,又,更佳為1150℃以下。加熱熔融之時間較佳為30分鐘~90分鐘。A melt is obtained by heating the raw material mixture by a known method. The temperature of heating and melting (melting temperature) is preferably 1000 to 1200°C, more preferably 1050°C or higher, and more preferably 1150°C or lower. The time for heating and melting is preferably 30 minutes to 90 minutes.
其後,藉由將熔融物冷卻使其固化,而獲得作為低熔點玻璃之材料之玻璃。冷卻方法並無特別限定,例如可採用使用滾壓機器或壓製機器之方法、或者藉由向冷卻液體中滴加等進行急冷之方法。 所獲得之玻璃較佳為完全為非晶質,即結晶度為0%。但是,只要處於不損及本發明之效果之範圍內,便亦可含有結晶化之部分。Then, the glass which is a material of a low melting point glass is obtained by cooling and making a molten material solidify. The cooling method is not particularly limited, and for example, a method of using a rolling machine or a pressing machine, or a method of quenching by adding dropwise to a cooling liquid, etc., can be adopted. The obtained glass is preferably completely amorphous, that is, the crystallinity is 0%. However, a crystallized part may be included as long as the effect of the present invention is not impaired.
上述所獲得之材料之玻璃形態為任意形態。例如可例舉:塊狀、板狀、薄板狀(薄片狀)、粉末狀等。其中,要想於製成密封層時容易熔融,且於成為低熔點玻璃之材料之玻璃為組成不同之2種以上之情形時容易混合該等2種以上玻璃,較佳為粉末狀。又,藉由製成粉末狀,容易查驗作為密封材料之性能。The glass form of the material obtained above is arbitrary. For example, a block shape, a plate shape, a thin plate shape (flaky shape), a powder shape, etc. are mentioned. Among them, in order to be easy to melt when forming a sealing layer, and to easily mix two or more types of glasses with different compositions when the glass used as the material of the low-melting glass is in a powder form. Moreover, by making into powder form, it becomes easy to check the performance as a sealing material.
製成粉末狀之情形時之粒度可根據用途進行適當選擇,玻璃粉末之粒度通常為0.1 μm~100 μm左右。又,基於密封層形成時進行漿料化並實施塗佈或乾燥時不沈澱分離,進而所獲得之密封層不會變得過厚之觀點,玻璃粉末之粒度較佳為5.0 μm以下,更佳為2.5 μm以下。 再者,本說明書中之粉末之粒度意指累積粒度分佈中之體積基準之50%粒徑(D50 )。具體而言,意指於使用雷射繞射/散射式粒度分佈測定裝置測定之粒徑分佈之累積粒度曲線中,其累計量以體積基準計占50%時之粒徑。The particle size of the powder can be appropriately selected according to the application, and the particle size of the glass powder is usually about 0.1 μm to 100 μm. In addition, the particle size of the glass powder is preferably 5.0 μm or less, more preferably from the viewpoint that the sealing layer is formed by slurrying and coating or drying without precipitation and separation, so that the obtained sealing layer does not become too thick. is 2.5 μm or less. Furthermore, the particle size of the powder in this specification means the volume-based 50% particle size (D 50 ) in the cumulative particle size distribution. Specifically, in the cumulative particle size curve of the particle size distribution measured using a laser diffraction/scattering particle size distribution measuring device, the particle size when the cumulative amount accounts for 50% on a volume basis.
玻璃粉末可藉由對上述所獲得之玻璃例如進行粉碎而獲得。於此情形時,粉末之粒度可根據粉碎之條件進行調整。又,除玻璃之粉碎以外,亦可視需要使用篩等進行分級。 關於粉碎之方法,可例舉:旋轉球磨機、振動球磨機、行星研磨機、噴射磨機、磨碎機、介質攪拌磨機(珠磨機)、顎式破碎機、輥碎機等。The glass powder can be obtained, for example, by pulverizing the glass obtained above. In this case, the particle size of the powder can be adjusted according to the grinding conditions. Moreover, in addition to the grinding|pulverization of glass, you may classify|categorize using a sieve etc. as needed. Regarding the method of pulverization, for example: rotary ball mill, vibration ball mill, planetary mill, jet mill, attritor, medium stirring mill (bead mill), jaw crusher, roller crusher, etc.
尤其是於使粒度成為5.0 μm以下之較細程度之情形時,較佳為使用濕式粉碎。濕式粉碎係於諸如水或醇之類之溶劑中使用包含氧化鋁或氧化鋯之介質或珠磨機進行粉碎之方法。In particular, in the case of making the particle size as fine as 5.0 μm or less, it is preferable to use wet pulverization. Wet pulverization is a method of pulverizing in a solvent such as water or alcohol using a medium containing alumina or zirconia or a bead mill.
繼而,於第1基材與第2基材之間對玻璃粉末進行煅燒,藉此形成包含玻璃組合物之密封層,該玻璃組合物包含低熔點玻璃。於成為低熔點玻璃之材料之玻璃有2種以上之情形時,進行將該等玻璃之粉末混合而成之玻璃粉末混合物之煅燒。亦可於煅燒之前進行預煅燒。Next, the glass powder is fired between the first base material and the second base material, thereby forming a sealing layer containing a glass composition containing low-melting glass. In the case where there are two or more types of glass to be the material of the low-melting glass, the calcination of the glass powder mixture obtained by mixing the powders of these glasses is performed. Pre-calcination can also be carried out before calcination.
關於玻璃粉末混合物,例如將V2 O5 -TeO2 -ZnO系玻璃設為基礎成分,並向其中添加Bi2 O3 -ZnO-B2 O3 系玻璃,藉此形成密封層時,獲得本實施方式中之低熔點玻璃。再者,基礎成分意指相對於玻璃粉末混合物之總體積,含量為50體積%以上,較佳為70體積%以上,又,較佳為99.9體積%以下。This glass powder mixture is obtained when, for example, V 2 O 5 -TeO 2 -ZnO-based glass is used as a base component, and Bi 2 O 3 -ZnO-B 2 O 3 -based glass is added to form a sealing layer. Low melting point glass in the embodiment. In addition, the base component means that the content is 50 vol % or more, preferably 70 vol % or more, and preferably 99.9 vol % or less with respect to the total volume of the glass powder mixture.
可以原本之形態使用玻璃粉末,但基於提高作業性之觀點,較佳為進行漿料化,即製成玻璃漿料後加以使用。於成為低熔點玻璃之材料之玻璃有2種以上之情形時,可將複數種玻璃粉末混合而製成玻璃粉末混合物之後,進行漿料化,亦可於製備複數種包含組成不同之各玻璃粉末之漿料之後,將該等漿料混合。玻璃漿料包含有機載劑,於形成密封層之步驟內,與溶劑、樹脂一起被去除。因此,密封層中並不會殘留有機載劑之構成成分。 玻璃漿料之調整可藉由使用具備攪拌葉之旋轉式混合機、輥磨機、珠磨機等之公知之方法進行。The glass powder may be used as it is, but from the viewpoint of improving workability, it is preferable to paste it, that is, to use it as a glass paste. When there are two or more types of glass to be the material of the low-melting glass, a plurality of glass powders can be mixed to form a glass powder mixture, and then slurry is performed, or a plurality of glass powders with different compositions can be prepared. After making the slurries, the slurries are mixed. The glass paste contains an organic vehicle, which is removed together with the solvent and the resin in the step of forming the sealing layer. Therefore, the constituent components of the organic vehicle do not remain in the sealing layer. The adjustment of the glass slurry can be performed by a known method using a rotary mixer equipped with a stirring blade, a roll mill, a bead mill, and the like.
密封層之玻璃組合物較佳為根據密封方法,除玻璃粉末以外,還包含低膨脹填充劑及雷射吸收物質中之至少一者。The glass composition of the sealing layer preferably includes, in addition to the glass powder, at least one of a low-expansion filler and a laser-absorbing substance according to the sealing method.
以下,對成為低熔點玻璃之材料之玻璃有2種以上之情形進行說明,即,對玻璃粉末混合物之預煅燒及煅燒進行說明。再者,此處對V2 O5 -TeO2 -ZnO系玻璃為基礎成分且Bi2 O3 -ZnO-B2 O3 系玻璃為添加成分之情形進行說明,但本發明並不限定於該等。Hereinafter, the case where there are two or more types of glass serving as the material of the low-melting glass will be described, that is, the preliminary firing and firing of the glass powder mixture will be described. In addition, the case where V 2 O 5 -TeO 2 -ZnO-based glass is a base component and Bi 2 O 3 -ZnO-B 2 O 3- based glass is an additive component will be described here, but the present invention is not limited to this. Wait.
預煅燒較佳為以較作為基礎成分之V2
O5
-TeO2
-ZnO系玻璃之軟化點高10~50℃左右之溫度進行加熱。若於此種溫度下進行預煅燒,則可獲得預煅燒層100a,該預煅燒層100a係如圖8所示,於軟化之V2
O5
-TeO2
-ZnO系玻璃101中散佈有Bi2
O3
-ZnO-B2
O3
系玻璃102。Pre-calcination is preferably performed at a temperature higher than the softening point of V 2 O 5 -TeO 2 -ZnO-based glass by about 10 to 50°C. If the pre-calcination is performed at such a temperature, a
繼而,於藉由雷射照射等對該預煅燒層100a加熱而煅燒之情形時,較佳為以預煅燒層100a達到使作為添加成分之Bi2
O3
-ZnO-B2
O3
系玻璃充分熔融之溫度的方式進行加熱。認為若於此種溫度下進行煅燒,則包含Bi2
O3
-ZnO-B2
O3
系玻璃102在內之整體熔融,從而如圖9所示,可獲得作為基礎成分之V2
O5
-TeO2
-ZnO系玻璃101之部分、及作為添加成分之Bi2
O3
-ZnO-B2
O3
系玻璃102之部分混合存在之密封層100。Next, in the case where the
此種密封層100由於作為基礎成分之V2
O5
-TeO2
-ZnO系玻璃之玻璃轉移溫度較低,故冷卻至室溫後之殘留應力較小。又,因添加成分所含之Bi2
O3
之較高之反應性,接著強度亦較優異。因此,此種密封層100之耐衝擊強度優異。 再者,於圖9中,V2
O5
-TeO2
-ZnO系玻璃101之部分與Bi2
O3
-ZnO-B2
O3
系玻璃102之部分清晰地分離,但圖9係模式圖,密封層100中該等部分之邊界並不一定清晰。 Since the glass transition temperature of the V 2 O 5 -TeO 2 -ZnO-based glass as the basic component of the
於藉由雷射照射等對預煅燒層100a加熱,而使Bi2
O3
-ZnO-B2
O3
系玻璃102熔融時,於Bi2
O3
-ZnO-B2
O3
系玻璃102與V2
O5
-TeO2
-ZnO系玻璃101之界面之附近,該等玻璃相互混合。因此,於所獲得之密封層中,V2
O5
-TeO2
-ZnO系玻璃101之部分有時會含有Bi2
O3
-ZnO-B2
O3
系玻璃,Bi2
O3
-ZnO-B2
O3
系玻璃102之部分有時會含有V2
O5
-TeO2
-ZnO系玻璃。 又,上述並不限定於以粉末之狀態預煅燒及煅燒玻璃粉末混合物之情形,以玻璃漿料之形式進行預煅燒及煅燒之情形時亦相同。 When the Bi 2 O 3 -ZnO-B 2 O 3 -based
低膨脹填充劑具有較低熔點玻璃低之熱膨脹係數,其係以降低密封層之熱膨脹係數為目的進行添加。低膨脹填充劑之熱膨脹係數約為-15×10-7 /℃~45×10-7 /℃。The low-expansion filler has a low thermal expansion coefficient of glass with a lower melting point, and is added for the purpose of reducing the thermal expansion coefficient of the sealing layer. The thermal expansion coefficient of the low expansion filler is about -15×10 -7 /℃~45×10 -7 /℃.
關於低膨脹填充劑,並無特別限定,較佳為選自由二氧化矽、氧化鋁、氧化鋯、矽酸鋯、堇青石、磷酸鋯系化合物、鈉鈣玻璃、及硼矽酸鹽玻璃所組成之群中之至少一種。關於磷酸鋯系化合物,可例舉:(ZrO)2 P2 O7 、NaZr2 (PO4 )3 、KZr2 (PO4 )3 、Ca0.5 Zr2 (PO4 )3 、NbZr(PO4 )3 、Zr2 (WO3 )(PO4 )2 、該等之複合化合物等。The low-expansion filler is not particularly limited, but is preferably selected from the group consisting of silica, alumina, zirconia, zirconium silicate, cordierite, zirconium phosphate-based compounds, soda lime glass, and borosilicate glass at least one of the group. The zirconium phosphate-based compounds include (ZrO) 2 P 2 O 7 , NaZr 2 (PO 4 ) 3 , KZr 2 (PO 4 ) 3 , Ca 0.5 Zr 2 (PO 4 ) 3 , NbZr(PO 4 ) 3. Zr 2 (WO 3 )(PO 4 ) 2 , complex compounds of these, and the like.
低膨脹填充劑之粒度較佳為0.1 μm~5.0 μm,更佳為0.1 μm~2.0 μm。The particle size of the low expansion filler is preferably 0.1 μm to 5.0 μm, more preferably 0.1 μm to 2.0 μm.
低膨脹填充劑之含量設定為使密封層之熱膨脹係數接近作為被密封材料之基板之熱膨脹係數。相對於玻璃粉末、低膨脹填充劑及雷射吸收物質之合計,低膨脹填充劑之含量較佳為1體積%以上,更佳為5體積%以上,進而較佳為10體積%以上。另一方面,基於確保密封材料熔融時之良好之流動性之觀點,低膨脹填充劑之含量較佳為50體積%以下,更佳為45體積%以下,進而較佳為40體積%以下。The content of the low-expansion filler is set so that the thermal expansion coefficient of the sealing layer is close to the thermal expansion coefficient of the substrate, which is the material to be sealed. The content of the low-expansion filler is preferably 1 vol% or more, more preferably 5 vol% or more, and still more preferably 10 vol% or more relative to the total of the glass powder, the low-expansion filler and the laser absorbing substance. On the other hand, from the viewpoint of ensuring good fluidity when the sealing material is melted, the content of the low-expansion filler is preferably 50 vol % or less, more preferably 45 vol % or less, and still more preferably 40 vol % or less.
添加雷射吸收物質之目的在於藉由吸收密封時所照射之雷射使密封材料充分熔融,而提高低溫密封性。 關於雷射吸收物質,並無特別限定,除玻璃組成中構成上述CuO、Fe2 O3 、MnO之Cu、Fe、Mn以外,還可例舉選自Cr、Ni、Ti、Co、Zn等中之至少一種金屬或包含該金屬之氧化物等化合物,即無機顏料等。又,雷射吸收物質亦可為除該等以外之顏料。The purpose of adding the laser-absorbing substance is to fully melt the sealing material by absorbing the laser irradiated during sealing, thereby improving the low-temperature sealing performance. The laser absorbing material is not particularly limited, and in addition to Cu, Fe, and Mn constituting the above-mentioned CuO, Fe 2 O 3 , and MnO in the glass composition, Cr, Ni, Ti, Co, Zn, and the like may be exemplified. At least one metal or compounds such as oxides containing the metal, i.e. inorganic pigments, etc. In addition, the laser absorbing material may be a pigment other than these.
雷射吸收物質之粒度較佳為0.1 μm~5.0 μm,更佳為0.1 μm~2.0 μm。The particle size of the laser absorbing material is preferably 0.1 μm to 5.0 μm, more preferably 0.1 μm to 2.0 μm.
基於較佳地獲得雷射吸收物質之效果之觀點,相對於玻璃粉末、低膨脹填充劑及雷射吸收物質之合計,包含除CuO、Fe2 O3 及MnO以外之其他雷射吸收物質的雷射吸收物質之合計含量較佳為0.1體積%以上,更佳為1體積%以上,進而較佳為3體積%以上。另一方面,基於確保密封材料於熔融時之良好之流動性之觀點,獲得優異之接著強度,雷射吸收物質之含量較佳為20體積%以下,更佳為18體積%以下,進而較佳為15體積%以下。From the viewpoint of better obtaining the effect of the laser absorbing material, compared with the total of glass powder, low expansion filler and laser absorbing material, the laser absorbing material containing other laser absorbing materials other than CuO, Fe 2 O 3 and MnO The total content of the radiation absorbing substances is preferably 0.1% by volume or more, more preferably 1% by volume or more, and still more preferably 3% by volume or more. On the other hand, from the viewpoint of ensuring good fluidity of the sealing material during melting and obtaining excellent bonding strength, the content of the laser absorbing substance is preferably 20 vol % or less, more preferably 18 vol % or less, and more preferably is 15% by volume or less.
關於有機載劑,例如使用溶劑中溶解作為黏合劑成分之樹脂所得者。 關於作為黏合劑成分之樹脂,例如可例舉:甲基纖維素、乙基纖維素、羧甲基纖維素、氧基乙基纖維素、苄基纖維素、丙基纖維素、硝化纖維素等。關於此情形時之溶劑,例如可使用:萜品醇、2,2,4-三甲基-1,3-戊二醇單異丁酸酯(TEXANOL)、丁基卡必醇乙酸酯、乙基卡必醇乙酸酯等。As the organic vehicle, for example, one obtained by dissolving a resin as a binder component in a solvent is used. As for the resin as a binder component, for example, methyl cellulose, ethyl cellulose, carboxymethyl cellulose, oxyethyl cellulose, benzyl cellulose, propyl cellulose, nitrocellulose, etc. may be mentioned. . As a solvent in this case, for example, terpineol, 2,2,4-trimethyl-1,3-pentanediol monoisobutyrate (TEXANOL), butyl carbitol acetate, Ethyl carbitol acetate, etc.
關於作為黏合劑成分之樹脂,亦可使用包含(甲基)丙烯酸甲酯、(甲基)丙烯酸乙酯、(甲基)丙烯酸丁酯、(甲基)丙烯酸2-羥基乙酯等丙烯酸系單體之丙烯酸系樹脂。關於此情形時之溶劑,例如可使用:甲基乙基酮、萜品醇、2,2,4-三甲基-1,3-戊二醇單異丁酸酯(TEXANOL)、丁基卡必醇乙酸酯、乙基卡必醇乙酸酯等。 再者,於本說明書中,(甲基)丙烯酸酯意指丙烯酸酯及甲基丙烯酸酯中之至少一者。As for the resin as the binder component, acrylic monomers such as methyl (meth)acrylate, ethyl (meth)acrylate, butyl (meth)acrylate, and 2-hydroxyethyl (meth)acrylate can also be used. Body of acrylic resin. As a solvent in this case, for example, methyl ethyl ketone, terpineol, 2,2,4-trimethyl-1,3-pentanediol monoisobutyrate (TEXANOL), butyl card can be used. carbitol acetate, ethyl carbitol acetate, etc. Furthermore, in this specification, (meth)acrylate means at least one of acrylate and methacrylate.
關於作為黏合劑成分之樹脂,亦可使用:聚碳酸乙二酯、聚碳酸丙二酯等聚碳酸伸烷酯。關於此情形時之溶劑,例如可使用:乙醯檸檬酸三乙酯、丙二醇二乙酸酯、琥珀酸二乙酯、乙基卡必醇乙酸酯、甘油三乙酸酯、2,2,4-三甲基-1,3-戊二醇單異丁酸酯(TEXANOL)、己二酸二甲酯、苯甲酸乙酯、丙二醇單苯醚與三乙二醇二甲醚之混合物等。Regarding the resin used as the binder component, polyalkylene carbonates such as polyethylene carbonate and polypropylene carbonate can also be used. As a solvent in this case, for example, acetyl triethyl citrate, propylene glycol diacetate, diethyl succinate, ethyl carbitol acetate, triacetin, 2,2, 4-Trimethyl-1,3-pentanediol monoisobutyrate (TEXANOL), dimethyl adipate, ethyl benzoate, a mixture of propylene glycol monophenyl ether and triethylene glycol dimethyl ether, etc.
有機載劑中之樹脂與溶劑之比率並無特別限制,藉由調整有機載劑之黏度,使玻璃漿料之黏度處於較佳範圍內。 有機載劑中之樹脂與溶劑之比率較佳為樹脂:溶劑=3:97~30:70左右(質量比)。The ratio of resin to solvent in the organic vehicle is not particularly limited. By adjusting the viscosity of the organic vehicle, the viscosity of the glass paste is within a preferred range. The ratio of resin to solvent in the organic carrier is preferably resin:solvent=about 3:97 to 30:70 (mass ratio).
玻璃漿料中之玻璃粉末、低膨脹填充劑及雷射吸收物質之合計與有機載劑之比率根據求得之玻璃漿料之黏度,適當進行調整。具體而言,較佳約為該合計:有機載劑=65:35~90:10(質量比)。The ratio of the total amount of glass powder, low-expansion filler and laser absorbing substance in the glass paste to the organic vehicle is appropriately adjusted according to the viscosity of the glass paste obtained. Specifically, it is preferably about this total: organic vehicle = 65:35 to 90:10 (mass ratio).
於玻璃漿料或玻璃組合物中,除上述以外,可視需要且於不違反本發明目的之限度內,調配公知之其他添加劑。In the glass paste or glass composition, in addition to the above, other known additives may be blended as necessary and within the limits that do not violate the purpose of the present invention.
(反應層) 反應層係藉由基板與密封層之反應所形成之層。因此,成為包含複數種元素之混合層,該等複數種元素係基板之構成元素及密封層之構成元素。藉由在基板與密封層之間形成該反應層,加強基板與密封層之接著狀態。 要想獲得上述效果,將反應層之厚度設為4 nm以上。反應層之厚度越厚,則接著強度越高,且耐衝擊強度亦得以提昇。因此,反應層之厚度較佳為5 nm以上,更佳為7 nm以上,進而較佳為10 nm以上。(Reaction layer) The reaction layer is a layer formed by the reaction between the substrate and the sealing layer. Therefore, it becomes a mixed layer containing a plurality of elements, and these plural elements are the constituent elements of the substrate and the constituent elements of the sealing layer. By forming the reaction layer between the substrate and the sealing layer, the bonding state between the substrate and the sealing layer is enhanced. To obtain the above effects, the thickness of the reaction layer should be set to 4 nm or more. The thicker the thickness of the reaction layer is, the higher the adhesive strength is, and the impact resistance is also improved. Therefore, the thickness of the reaction layer is preferably 5 nm or more, more preferably 7 nm or more, and still more preferably 10 nm or more.
反應層只要形成於第1基板及第2基板中之至少一者與密封層之間即可,但當形成於第1基板及第2基板這兩者與密封層之間時,製成密封封裝時接著強度變高,故而較佳。 於反應層形成於密封層與兩基板之間之情形時,只要任一反應層之厚度為4 nm~25 nm即可,更佳為兩反應層之厚度均為4 nm~25 nm。The reaction layer only needs to be formed between at least one of the first substrate and the second substrate and the sealing layer, but when it is formed between both the first substrate and the second substrate and the sealing layer, a hermetic package is formed. It is preferable because the strength of the adhesive becomes high. When the reaction layer is formed between the sealing layer and the two substrates, the thickness of either reaction layer may be 4 nm to 25 nm, more preferably, the thickness of both reaction layers is 4 nm to 25 nm.
另一方面,將反應層之厚度設為25 nm以下之原因有以下3點。 反應層之厚度會根據形成密封層時之溫度發生變化。於使反應層設為厚之情形時,需要提高密封溫度,例如,藉由雷射照射進行密封之情形時,需要提高雷射輸出。然而,若使雷射輸出過高,則位於形成密封層之部位之下部之配線等會受損。因此,無法施加過度之雷射輸出。因此,反應層之厚度存在上限。On the other hand, the reasons for setting the thickness of the reaction layer to be 25 nm or less are as follows. The thickness of the reaction layer varies according to the temperature at which the sealing layer is formed. When making the reaction layer thick, it is necessary to increase the sealing temperature, for example, when sealing by laser irradiation, it is necessary to increase the laser output. However, if the laser output is made too high, the wiring and the like located under the portion where the sealing layer is formed will be damaged. Therefore, excessive laser output cannot be applied. Therefore, there is an upper limit on the thickness of the reaction layer.
此外,若反應層過厚,則該反應層與位於基板之與密封層所在側相反之側之層發生反應,於例如薄膜電晶體(TFT)之情形時,與鈍化膜或電極等發生反應,而過量地產生氣泡。由此,材料強度本身會降低,而耐衝擊強度亦會降低,基於該點,反應層之厚度亦存在上限。In addition, if the reactive layer is too thick, the reactive layer reacts with the layer on the opposite side of the substrate to the side where the sealing layer is located, and in the case of a thin film transistor (TFT), for example, reacts with a passivation film or an electrode, etc., And excessive generation of air bubbles. As a result, the strength of the material itself will be reduced, and the impact resistance will also be reduced. Based on this, there is also an upper limit to the thickness of the reaction layer.
進而,反應層之厚度亦會根據構成玻璃組合物之玻璃之組成發生變化。例如,於包含V2 O5 作為主成分之玻璃之情形時,可根據Bi2 O3 之含量調整反應層之厚度。具體而言,若增加Bi2 O3 之含量,則反應層變厚,但若Bi2 O3 之含量過多,則難以玻璃化,即便玻璃化,亦會立刻結晶化。如此,密封時之製程範圍變窄,故藉由增加Bi2 O3 之含量使反應層變厚並不現實。Furthermore, the thickness of the reaction layer also varies depending on the composition of the glass constituting the glass composition. For example, in the case of glass containing V 2 O 5 as the main component, the thickness of the reaction layer can be adjusted according to the content of Bi 2 O 3 . Specifically, when the content of Bi 2 O 3 is increased, the reaction layer becomes thick, but when the content of Bi 2 O 3 is too large, it becomes difficult to vitrify, and even if it is vitrified, it is immediately crystallized. In this way, the process range during sealing is narrowed, so it is not practical to increase the thickness of the reaction layer by increasing the content of Bi 2 O 3 .
根據上述理由,反應層之厚度為25 nm以下。該厚度較佳為20 nm以下,更佳為16 nm以下。For the above reasons, the thickness of the reaction layer is 25 nm or less. The thickness is preferably 20 nm or less, more preferably 16 nm or less.
可藉由以下所示之方法作為實用方法來確認反應層之產生。The generation of the reaction layer can be confirmed by the method shown below as a practical method.
首先,以容易研磨之方式切取密封封裝之一部分製成試樣。自該試樣中,研磨一基板並將其去除。再者,於接著強度較低而於密封層內剝離之情形時,可省略基板之研磨步驟。繼而,將去除了一基板之試樣浸漬於蝕刻液中,去除密封層。蝕刻液使用可將密封層之構成元素溶解之酸液。例如,於使用鉍系玻璃作為密封層之情形時,使用30%硝酸水溶液等。 反應層係基板之構成元素與密封層之構成元素之混合層,故去除密封層時亦同時去除反應層。First, a portion of the hermetic package is cut out in a manner that can be easily ground to prepare a sample. From the sample, a substrate was ground and removed. Furthermore, when the adhesive strength is low and peeling in the sealing layer, the polishing step of the substrate can be omitted. Next, the sample from which one substrate was removed was immersed in an etching solution to remove the sealing layer. As the etching solution, an acid solution capable of dissolving the constituent elements of the sealing layer is used. For example, when a bismuth-based glass is used as a sealing layer, a 30% nitric acid aqueous solution or the like is used. The reaction layer is a mixed layer of the constituent elements of the substrate and the constituent elements of the sealing layer, so when the sealing layer is removed, the reaction layer is also removed at the same time.
如此,獲得反應層之形成痕跡以凹狀部之形式殘存之基板,藉此可確認產生了反應層。具有此種凹狀部之基板之表面形狀可藉由非接觸型表面粗糙度計例如白色干涉儀等進行確認。反應層之具體厚度設為反應層之形成痕跡即凹狀部之深度,該深度係使用下述實施例所記載之方法並藉由白色干涉儀進行測定。In this way, a substrate in which the formation trace of the reaction layer remained in the form of a concave portion was obtained, whereby it was confirmed that the reaction layer was generated. The surface shape of the board|substrate which has such a recessed part can be confirmed by a non-contact surface roughness meter, for example, a white interferometer. The specific thickness of the reaction layer was defined as the depth of the concave portion, which is the trace of the formation of the reaction layer, and the depth was measured by a white interferometer using the method described in the following examples.
<密封封裝之製造方法> 對本實施方式之密封封裝之製造方法之一例進行說明,但本發明之密封封裝並不限定於該等。又,可於不違反本發明主旨之限度內並視需要,適當變更其構成。<Manufacturing method of hermetic package> An example of the manufacturing method of the hermetic package of the present embodiment will be described, but the hermetic package of the present invention is not limited to these. Moreover, the structure can be suitably changed as needed within the limit which does not violate the summary of this invention.
將上述所獲得之玻璃漿料呈框狀地塗佈於第2基板上之後,進行乾燥,藉此形成塗佈層。塗佈方法可例舉:網版印刷、凹版印刷等印刷法;點膠法等。 乾燥係為了去除玻璃漿料中所含之溶劑而實施,通常於120℃以上之溫度下實施10分鐘以上。若塗佈層中殘留溶劑,則有於其後之預煅燒中,無法充分去除作為有機載劑而添加之作為黏合劑成分之樹脂之虞。After applying the glass paste obtained above on the second substrate in a frame shape, it is dried to form a coating layer. Examples of the coating method include printing methods such as screen printing and gravure printing; dispensing methods and the like. Drying is performed to remove the solvent contained in the glass paste, and is usually performed at a temperature of 120°C or higher for 10 minutes or longer. If the solvent remains in the coating layer, there is a possibility that the resin added as an organic vehicle as a binder component cannot be sufficiently removed in the subsequent pre-baking.
塗佈層藉由進行預煅燒而成為預煅燒層15a(圖6、圖7)。預煅燒係藉由如下方式進行,即,將塗佈層加熱至密封材料所含之低熔點玻璃之玻璃轉移溫度以下之溫度,去除作為黏合劑成分之樹脂,其後,加熱至密封材料所含之低熔點玻璃之軟化點以上之溫度。The coating layer becomes the
繼而,將設置有預煅燒層15a之第2基板12與第1基板11以第1基板11與預煅燒層15a對向之方式配置並積層(圖3A、圖3B)。再者,第1基板11上,根據密封封裝10之規格設置電子元件部13(圖4、圖5)。Next, the 2nd board|
其後,通過第2基板12向預煅燒層15a照射雷射光16而實施煅燒(圖3C)。雷射光16係沿著框狀形狀之預煅燒層15a進行掃描並照射。藉由遍及預煅燒層15a之全周地照射雷射光16,於第1基板11與第2基板12之間形成框狀密封層15。再者,雷射光16亦可通過第1基板11照射至預煅燒層15a。After that, the
雷射光16之種類並無特別限定,可使用半導體雷射、二氧化碳氣體雷射、準分子雷射、YAG(Yttrium-Aluminum-Garnet,釔-鋁-石榴石)雷射、HeNe雷射等。雷射光16之照射條件根據預煅燒層15a之厚度、線寬、厚度方向之截面面積等進行選擇。 基於使預煅燒層15a充分熔融之觀點,雷射光16之輸出較佳為2 W以上,更佳為5 W以上。又,基於抑制於第1基板11、第2基板12產生裂痕等之觀點,雷射光16之輸出較佳為150 W以下,更佳為120 W以下。The type of
如此,製造密封封裝10,該密封封裝10於第1基板11與第2基板12之間,藉由密封層15氣密地封閉有電子元件部13(圖3D)。In this way, the
以上,對藉由雷射光16之照射進行煅燒之方法進行了說明,但煅燒之方法並不限於藉由雷射光16之照射進行之方法。 煅燒方法可根據電子元件部13之耐熱性、密封封裝10之構成等採用其他方法。例如,於電子元件部13之耐熱性較高之情形時,或不具有電子元件部13之情形時,亦可代替雷射光16之照射,而將如圖3B所示之組裝體整體配置於電爐等煅燒爐內,對包括預煅燒層15a在內之組裝體整體加熱,來製成密封層15。As mentioned above, the method of calcining by irradiation of
<有機電激發光元件> 本實施方式之有機電激發光元件具有第1基板、及與第1基板對向配置之第2基板,於第1基板與第2基板之間,具有將該等基板接著之密封層。密封層包含玻璃組合物,構成玻璃組合物之玻璃之玻璃轉移溫度為350℃以下。又,於第1基板及第2基板中之至少一者與密封層之間,形成有其等反應而成之反應層,反應層之厚度為4 nm~25 nm。<Organic electroluminescence element> The organic electroluminescence element of the present embodiment includes a first substrate and a second substrate arranged opposite to the first substrate, and has the substrates between the first substrate and the second substrate. Then the sealing layer. The sealing layer contains a glass composition, and the glass transition temperature of the glass constituting the glass composition is 350° C. or lower. Moreover, between at least one of the first substrate and the second substrate and the sealing layer, a reaction layer formed by reacting the same is formed, and the thickness of the reaction layer is 4 nm to 25 nm.
有機電激發光元件中之密封層及反應層分別與上述<密封封裝>中之(密封層)及(反應層)所記載內容相同,較佳態樣亦相同。The sealing layer and the reaction layer in the organic electroluminescent element are respectively the same as those described in (sealing layer) and (reaction layer) in the above-mentioned <sealing package>, and the preferred aspects are also the same.
以下,參照圖10,對構成OELD之有機電激發光元件之一例進行說明,但本發明之有機電激發光元件並不限定於此。又,可於不違反本發明主旨之限度內並視需要,適當變更其構成。Hereinafter, an example of the organic electroluminescence element constituting the OELD will be described with reference to FIG. 10 , but the organic electroluminescence element of the present invention is not limited to this. Moreover, the structure can be suitably changed as needed within the limit which does not violate the summary of this invention.
本實施方式之有機電激發光元件210於基板211上積層有積層構造體213。積層構造體213自基板211側起依序具有陰極213c、有機薄膜層213b及陽極213a。以覆蓋積層構造體213之外表面側之方式,具備以與基板211對向之方式載置之玻璃構件212、及將基板211與玻璃構件212接著之密封層215。 該密封層215包含上述玻璃組合物,構成玻璃組合物之玻璃之玻璃轉移溫度為350℃以下。又,於基板211及玻璃構件212中之至少一者與密封層215之間,形成有厚度為4 nm~25 nm之反應層(未圖示)。 [實施例]In the
以下,參照實施例,對本發明進一步詳細地進行說明,但本發明並不限定於實施例。例4-1~4-6為實施例,例5-1~5-3為比較例。又,例1-1~1-4及例2-1~2-5為實施例中之低熔點玻璃之製造例,例3-1~3-3為比較例中之低熔點玻璃之製造例。Hereinafter, the present invention will be described in further detail with reference to Examples, but the present invention is not limited to the Examples. Examples 4-1 to 4-6 are examples, and Examples 5-1 to 5-3 are comparative examples. In addition, Examples 1-1 to 1-4 and Examples 2-1 to 2-5 are the production examples of the low-melting glass in the examples, and Examples 3-1 to 3-3 are the production examples of the low-melting glass in the comparative examples. .
[例1-1~1-4及例3-1~3-3] (玻璃粉末之製造) 以成為表1及表3之「玻璃組成」一欄中莫耳%表示所示之組成的方式,調製原料並加以混合,於1050~1150℃之電爐中,使用白金坩堝熔融1小時。繼而,使所獲得之熔融玻璃成形為薄板狀玻璃。 藉由旋轉球磨機將薄板狀玻璃粉碎,並利用篩進行分級,獲得粒度0.5 μm~15 μm之例1-1~1-4及例3-1~3-3之玻璃粉末。[Examples 1-1 to 1-4 and 3-1 to 3-3] (Manufacture of glass powder) The composition shown in the column of "glass composition" in Tables 1 and 3 is expressed in mol% , prepare the raw materials, mix them, and melt them in a platinum crucible for 1 hour in an electric furnace at 1050-1150 °C. Next, the obtained molten glass is shaped into a sheet glass. The thin plate glass was pulverized by a rotating ball mill and classified by a sieve to obtain glass powders of Examples 1-1 to 1-4 and Examples 3-1 to 3-3 with a particle size of 0.5 μm to 15 μm.
[例2-1~2-5] (玻璃粉末混合物之製造) 將例1-2~1-4之玻璃粉末以表2所示之體積比率混合,獲得例2-1~2-5之玻璃粉末混合物。各玻璃粉末混合物之平均組成如表2所示。再者,表2中,「玻璃1-2」意指例1-2之玻璃粉末,其他同樣之記載亦為同樣之含義。[Examples 2-1 to 2-5] (Production of glass powder mixture) The glass powders of Examples 1-2 to 1-4 were mixed in the volume ratio shown in Table 2 to obtain the glasses of Examples 2-1 to 2-5 powder mixture. The average composition of each glass powder mixture is shown in Table 2. In addition, in Table 2, "glass 1-2" means the glass powder of Example 1-2, and other similar descriptions also have the same meaning.
針對所獲得之各例之玻璃粉末或玻璃粉末混合物,使用示差熱分析裝置(Rigaku股份有限公司製造之Thermo Plus TG8110),進行作為玻璃特性之玻璃轉移溫度(Tg)之測定。測定條件如下:於大氣中,使用氧化鋁作為基準試樣,將升溫速度設為10℃/分鐘,將溫度範圍設為室溫~500℃。如上所述,將第1反曲點設為玻璃轉移溫度。 將所獲得之結果示於表1~表3中。About the obtained glass powder or glass powder mixture of each example, the glass transition temperature (Tg) which is a glass characteristic was measured using a differential thermal analyzer (Thermo Plus TG8110 by Rigaku Co., Ltd.). The measurement conditions are as follows: In the air, using alumina as a reference sample, the temperature increase rate is set to 10°C/min, and the temperature range is set to room temperature to 500°C. As described above, let the first inflection point be the glass transition temperature. The obtained results are shown in Tables 1 to 3.
[表1]
[表2]
[表3]
[例4-1~4-6及例5-1~5-3] (玻璃漿料之製造) 以成為表4及表5所示之比率(體積%)之方式調製各例之玻璃粉末或玻璃粉末混合物、雷射吸收物質(Fe2 O3 -CuO-MnO)、及低膨脹填充劑(磷酸鋯),獲得玻璃組合物粉末。此外,以成為表4所示之比率(質量%)之方式調製乙基纖維素(樹脂)及二乙二醇單-2-乙基己基醚(溶劑),從而製備有機載劑。繼而,以表4所示之質量比率調製玻璃組合物粉末與有機載劑,並藉由二乙二醇單-2-乙基己基醚進行稀釋以成為適於網版印刷之黏度,藉此製備玻璃漿料。再者,雷射吸收物質之粒度為0.8 μm,低膨脹填充劑之粒度為0.9 μm。 再者,表4及表5中,「玻璃1-1」意指例1-1之玻璃粉末,其他同樣之記載所為同樣之含義。[Examples 4-1 to 4-6 and Examples 5-1 to 5-3] (Manufacture of glass paste) The glass powder or The glass powder mixture, the laser absorbing substance (Fe 2 O 3 -CuO-MnO), and the low expansion filler (zirconium phosphate) were used to obtain a glass composition powder. Moreover, ethyl cellulose (resin) and diethylene glycol mono-2-ethylhexyl ether (solvent) were prepared so that it might become the ratio (mass %) shown in Table 4, and the organic vehicle was prepared. Then, the glass composition powder and the organic vehicle were prepared in the mass ratio shown in Table 4, and diluted with diethylene glycol mono-2-ethylhexyl ether to obtain a viscosity suitable for screen printing, thereby preparing glass paste. Furthermore, the particle size of the laser absorbing material is 0.8 μm, and the particle size of the low expansion filler is 0.9 μm. In addition, in Table 4 and Table 5, "glass 1-1" means the glass powder of Example 1-1, and the same meaning is the same in other descriptions.
(密封封裝之製作) 如圖11、12所示,使用400目之篩網將上述玻璃漿料呈框狀地塗佈於包含作為無鹼玻璃之AN100(AGC公司製造,25 mm×25 mm×厚度0.5 mm)之玻璃基板32之表面。繼而,於120℃×10分鐘之條件下進行乾燥,進而於420℃~480℃×10分鐘之條件下進行預煅燒,形成預煅燒層35a。再者,於將預煅燒層35a製成密封層35時,將度設為500 μm左右,將膜厚設為4 μm~8 μm左右。 其後,將玻璃基板31與設置有預煅燒層35a之玻璃基板32以玻璃基板31與預煅燒層35a接觸之方式重疊,製成組裝體。進而,對該組裝體,自玻璃基板32側,以10 mm/s之掃描速度照射波長940 nm、點徑1.6 mm之雷射光(半導體雷射),使預煅燒層35a熔融及急冷固化。藉此,製作密封封裝30,該密封封裝30如圖13所示,於玻璃基板31經由密封層35接著有玻璃基板32。 再者,將雷射光之輸出設為表4及表5所示之值,但對於例4-3~4-6,選擇複數種輸出,並研究由此所致之反應層之厚度及落球強度之差異。(Preparation of hermetic package) As shown in Figures 11 and 12, the above-mentioned glass paste was applied in a frame shape using a 400-mesh screen on AN100 (manufactured by AGC Company, 25 mm×25 mm× The surface of the
(反應層之厚度測定) 藉由下述方法,對密封封裝30中玻璃基板32與密封層35反應而成之反應層之厚度進行測定。 將玻璃基板31自密封封裝30剝離。繼而,利用蒸餾水以1:1之比率稀釋硝酸水溶液(60%)而製備蝕刻液,將已去除玻璃基板31之試樣浸漬於蝕刻液中48小時,藉此進行密封層及反應層之去除。繼而,利用蒸餾水洗淨試樣,並擦拭乾淨。 上述所獲得者僅為玻璃基板32,於形成有反應層之情形時,如圖18所示,反應層形成後以凹狀部36之形式殘存於其表面。使用白色干涉儀(美國Zygo公司製造之Zygo New View 6200),拍攝玻璃基板32之形成有密封層之側、即具有凹狀部36之側之干擾條紋,並基於根據上述干擾條紋獲得之高度資訊,獲得反應層之厚度。(Measurement of the thickness of the reaction layer) The thickness of the reaction layer formed by the reaction between the
關於具體之測定方法,按照下述順序實施。可變焦距透鏡使用0.5倍者,物鏡使用10倍者。 於玻璃基板32中形成有反應層之側、即與密封層相接之側的玻璃基板之主面中,未形成反應層、即凹狀部36之區域之高度設為玻璃厚度Ha。另一方面,將形成有反應層、即凹狀部36之框狀區域之高度設為玻璃厚度Hb。反應層之厚度係指於三處測定上述Ha與Hb之差(Ha-Hb)時之平均值。 此處,關於Ha,於未形成凹狀部36之區域中之任意部位,於寬1.4 mm之範圍內測定高度,將其平均值設為玻璃厚度Ha。又,Hb設為藉由如下所示之方法計算出之值。首先,以形成有凹狀部36之區域之任意點為中心,測定凹狀部之寬度方向α之高度。繼而,對於所測定之凹狀部之寬度方向α之高度之波形,於3點取移動平均。於取移動平均之高度之波形中,以高度最低之點、即凹狀部之深度最深之點為中心,於與上文中凹狀部之寬度方向垂直之方向β上,於1.4 mm之範圍內測定高度。將所測定之高度之平均值設為玻璃厚度Hb。 根據上述所得之Ha及Hb,獲得第一處之(Ha-Hb)。於其他兩處重複進行同樣之測定,將所獲得之三處之(Ha-Hb)之值之平均值設為反應層之厚度。 再者,於計算一處之(Ha-Hb)時,測定Ha與Hb之區域選擇接近處。其係考慮到形成反應層前之玻璃基板之厚度並不一致之情形。The specific measurement method was implemented according to the following procedure. Use 0.5x for the variable focal length lens and 10x for the objective. In the main surface of the
(落球強度之測定) 關於耐衝擊強度之評價,進行落球強度之測定。 如圖14及圖15所示,將密封封裝30用作強度評價用試驗片,藉由熱硬化性接著劑43於其單面固定100 mm×100 mm×厚度3.4 mm之支持基板46。 其後,如圖16所示,使砝碼球47自支持基板46之未接著強度評價用試驗片之側,朝向接著有強度評價用試驗片之區域落下。變更砝碼球47之質量及掉落高度48,將此時之掉落能設為落球強度,使用下述式進行計算。 逐漸提高掉落能,測定密封封裝30之一對玻璃基板31、32不剝離之最大掉落能作為落球強度。再者,上述「密封封裝30之一對玻璃基板31、32不剝離」意指進行3次試驗時2次以上不剝離之情形。將落球強度之測定結果示於表4及表5中。 又,將落球強度與反應層之厚度之關係彙總於圖17中。 落球強度[mJ]=砝碼球之質量[g]×掉落高度[m]×重力加速度[m/s2
](Measurement of falling ball strength) For the evaluation of impact resistance, the measurement of falling ball strength was performed. As shown in FIGS. 14 and 15 , the sealing
[表4]
[表5]
於作為實施例之例4-1~4-6之密封封裝中,形成充分厚度之反應層,示出優異之耐衝擊強度。另一方面,於作為比較例之例5-1~5-3之密封封裝中,雖密封層使用了玻璃轉移溫度為350℃以下之低熔點玻璃,但並未形成反應層,或儘管形成反應層但較薄,結果耐衝擊強度較差。 本申請案係基於2020年5月29日申請之日本專利申請2020-094667、及2020年7月3日申請之日本專利申請2020-115907者,且將其內容作為參照併入本文。In the hermetically sealed packages of Examples 4-1 to 4-6 as examples, a reaction layer with a sufficient thickness was formed, showing excellent impact resistance. On the other hand, in the sealed packages of Examples 5-1 to 5-3 as comparative examples, although the low-melting glass with a glass transition temperature of 350° C. or lower was used for the sealing layer, the reaction layer was not formed, or even though the reaction layer was formed layer but thinner, resulting in poorer impact strength. This application is based on Japanese Patent Application No. 2020-094667 filed on May 29, 2020 and Japanese Patent Application No. 2020-115907 filed on July 3, 2020, the contents of which are incorporated herein by reference.
10:密封封裝
11:第1基板
12:第2基板
13:電子元件部
15:密封層
15a:預煅燒層
16:雷射光
30:密封封裝
31:玻璃基板
32:玻璃基板
35:密封層
35a:預煅燒層
36:凹狀部
43:熱硬化性接著劑
46:支持基板
47:砝碼球
48:掉落高度
100:密封層
100a:預煅燒層
101:V2
O5
-TeO2
-ZnO系玻璃
102:Bi2
O3
-ZnO-B2
O3
系玻璃
210:有機電激發光元件
211:基板
212:玻璃構件
213:積層構造體
213a:陽極
213b:有機薄膜層
213c:陰極
215:密封層10: Hermetic package 11: First substrate 12: Second substrate 13: Electronic component part 15:
圖1係表示密封封裝之一實施方式之前視圖。 圖2係圖1所示之密封封裝之A-A線剖視圖。 圖3A係表示密封封裝之製造方法之一實施方式之步驟圖。 圖3B係表示密封封裝之製造方法之一實施方式之步驟圖。 圖3C係表示密封封裝之製造方法之一實施方式之步驟圖。 圖3D係表示密封封裝之製造方法之一實施方式之步驟圖。 圖4係圖1所示之密封封裝之製造所使用之第1基板的俯視圖。 圖5係圖4所示之第1基板之B-B線剖視圖。 圖6係圖1所示之密封封裝之製造所使用之第2基板的俯視圖。 圖7係圖6所示之第2基板之C-C線剖視圖。 圖8係對玻璃粉末混合物進行預煅燒而獲得之預煅燒層之概念圖。 圖9係藉由雷射照射等對玻璃粉末混合物加熱而獲得之密封層之概念圖。 圖10係作為密封封裝之一例之有機電激發光元件之概念圖。 圖11係實施例之密封封裝之製造所使用之玻璃基板之俯視圖。 圖12係圖11所示之玻璃基板之D-D線剖視圖。 圖13係表示實施例之密封封裝之剖視圖。 圖14係單面設置有支持基板之密封封裝之俯視圖。 圖15係圖14所示之設置有支持基板之密封封裝之F-F線剖視圖。 圖16係表示落球強度之測定方法之圖。 圖17係表示落球強度與反應層厚度之關係之圖表。 圖18係測定反應層之厚度所使用之玻璃基板之概略俯視圖。FIG. 1 is a front view showing one embodiment of a hermetic package. FIG. 2 is a cross-sectional view taken along line A-A of the hermetic package shown in FIG. 1 . FIG. 3A is a step diagram showing one embodiment of a method of manufacturing a hermetic package. FIG. 3B is a step diagram showing an embodiment of a method of manufacturing a hermetic package. FIG. 3C is a step diagram showing an embodiment of a method of manufacturing a hermetic package. FIG. 3D is a step diagram showing one embodiment of a method of manufacturing a hermetic package. FIG. 4 is a plan view of a first substrate used in the manufacture of the hermetic package shown in FIG. 1 . FIG. 5 is a sectional view taken along the line B-B of the first substrate shown in FIG. 4 . FIG. 6 is a plan view of a second substrate used in the manufacture of the hermetic package shown in FIG. 1 . FIG. 7 is a cross-sectional view taken along line C-C of the second substrate shown in FIG. 6 . FIG. 8 is a conceptual diagram of a pre-calcined layer obtained by pre-calcining a glass powder mixture. FIG. 9 is a conceptual diagram of a sealing layer obtained by heating a glass powder mixture by laser irradiation or the like. FIG. 10 is a conceptual diagram of an organic electroluminescent device as an example of a hermetic package. FIG. 11 is a top view of a glass substrate used in the manufacture of the hermetic package of the embodiment. FIG. 12 is a cross-sectional view taken along the line D-D of the glass substrate shown in FIG. 11 . FIG. 13 is a cross-sectional view showing the hermetic package of the embodiment. FIG. 14 is a top view of a hermetic package with a support substrate provided on one side. FIG. 15 is a cross-sectional view taken along the line F-F of the sealed package provided with the support substrate shown in FIG. 14 . Fig. 16 is a diagram showing a method of measuring the falling ball strength. FIG. 17 is a graph showing the relationship between the falling ball strength and the thickness of the reaction layer. 18 is a schematic plan view of a glass substrate used for measuring the thickness of the reaction layer.
Claims (10)
Applications Claiming Priority (4)
Application Number | Priority Date | Filing Date | Title |
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JP2020-094667 | 2020-05-29 | ||
JP2020094667 | 2020-05-29 | ||
JP2020-115907 | 2020-07-03 | ||
JP2020115907 | 2020-07-03 |
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TW110119229A TW202145615A (en) | 2020-05-29 | 2021-05-27 | Sealed package and organic electroluminescent element comprising a first substrate, a second substrate arranged opposite to the first substrate, and a sealing layer arranged therebetween |
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KR (1) | KR20210147932A (en) |
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WO2023243472A1 (en) * | 2022-06-13 | 2023-12-21 | Agc株式会社 | Cover glass with outer frame, semiconductor light emitting device, and semiconductor light receiving device |
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