TW202141487A - Resistive memory device - Google Patents

Abstract

A resistive memory device including a substrate, an isolation structure, a word line, a source line, a bit line and a resistive memory is provided. The substrate includes a body region, and first, second and third doped regions, the first and second doped regions are spaced apart from each other by the body region. The isolation structure is disposed in the substrate, and the second doped region and the third doped region are spaced apart from each other by the isolation structure. The word line is disposed on the substrate, the first and second doped regions are located at opposite sides of the word line, and the first and third doped regions are located at the opposite sides of the word line. The source line is disposed on the substrate and electrically connected with the first doped region. The bit line and the resistive memory are disposed on the substrate, and the third doped region is electrically connected with the bit line via the resistive memory.

Description

Resistive memory device

The present invention relates to a memory device, and more particularly to a resistive memory device.

In order to achieve high memory capacity in the same area, a single transistor is currently developed to connect multiple memories at the same time (ie 1TnR structure, n is an integer greater than 1). For high-density resistive random access memory, a sneak current problem will be encountered, which will cause adjacent memories to affect each other during operation, resulting in a decrease in reliability.

The present invention provides a resistive memory device, which can avoid the occurrence of latent leakage current (sneak current).

The resistive memory device of the present invention includes a substrate, an isolation structure, a word line, a source line, a first bit line, and a first resistive memory. The substrate includes a body region, a first doped region, a second doped region and a third doped region, wherein the first doped region and the second doped region are separated by the body region. The isolation structure is configured in the substrate, and the second doped region and the third doped region are separated by the isolation structure. The word line is configured on the substrate, wherein the first doped region and the second doped region are located on opposite sides of the word line, and the first doped region and the third doped region are located on opposite sides of the word line. The source line is disposed on the substrate and is electrically connected to the first doped region. The first bit line is arranged on the substrate. The first resistive memory is disposed on the substrate. In the thickness direction of the substrate, the first resistive memory is located between the substrate and the first bit line, and the third doped region is electrically connected through the first resistive memory. Sexually connected to the first bit line.

Based on the above, in the resistive memory device of the present invention, the first doped region and the second doped region located on opposite sides of the character line in the substrate are separated by the main body region of the substrate, and the second doped region in the substrate The doped region and the third doped region are separated by an isolation structure, the source line is electrically connected to the first doped region, and the third doped region is electrically connected to the bit line through the resistive memory, thereby During the operation of the resistive memory device, the isolation structure arranged between the second doped region and the third doped region can be used as a switch for controlling the conduction or disconnection of the resistive memory and the transistor. In this way, during the operation of the resistive memory device, the transmission path of the sneak current is cut off, so that the current of the selected resistive memory can be accurately read and the state can be judged.

In order to make the above-mentioned features and advantages of the present invention more comprehensible, the following specific embodiments are described in detail in conjunction with the accompanying drawings.

FIG. 1 is a schematic top view of a resistive memory device according to an embodiment of the present invention. Fig. 2 is a schematic cross-sectional view taken along the section line I-I' of Fig. 1. Fig. 3 is a schematic cross-sectional view taken along the line II-II' of Fig. 1. Fig. 4 is a schematic cross-sectional view taken along the line III-III' of Fig. 1. 5 is a schematic cross-sectional view of a state when a voltage is applied to a part of the memory in the resistive memory device of FIG. 1. It should be noted that the cross-sectional position of FIG. 5 can refer to the position of the cross-sectional line I-I' in FIG. 1.

1 to 4, the resistive memory device 10 includes a substrate 100, an isolation structure 110, at least one word line WL, at least one source line SL, bit line BL1, bit line BL2, resistive memory R1 and resistive memory R2. In this embodiment, the resistive memory device 10 may further include at least one contact structure C1, at least one contact structure C2, at least one contact structure C3, at least one contact structure C4, and at least one contact structure C5.

In this embodiment, the substrate 100 may include a body region B, at least one doped region TD ₁ , at least one doped region TD ₂ , at least one doped region RD ₁ and at least one doped region RD ₂ , wherein at least one doped region RD 2 The doped region TD ₁ , at least one doped region TD ₂ , at least one doped region RD ₁ and at least one doped region RD _{2 are} disposed on the body region B.

In this embodiment, _{the conductivity type of the doped region TD 1} is different from that of the body region B, and the conductivity of the doped region TD ₁ , the doped region TD ₂ , the doped region RD ₁ and the doped region RD ₂ are mutually different. same. For example, in one embodiment, the body region B can be a P-well, and the doped region TD ₁ , the doped region TD ₂ , the doped region RD ₁ and the doped region RD ₂ can be It is an N-type doped region (ie N+ region). In this embodiment, the doped region TD ₁ , the doped region TD ₂ , the doped region RD ₁ and the doped region RD ₂ are separated from each other. In detail, as shown in FIG. 3, in the second direction X, the doped region TD ₁ and the doped region TD ₂ are separated by the body region B. In addition, as shown in FIG. 1 and FIG. 2, the doped region RD ₁ , the doped region TD ₂ and the doped region RD ₂ are arranged in sequence along the first direction Y and are separated from each other. In other words, in this embodiment, in the first direction Y, the doped region TD ₂ is located between the doped region RD ₁ and the doped region RD ₂ . In this embodiment, the second direction X intersects the first direction Y. For example, the second direction X may be substantially orthogonal to the first direction Y.

In this embodiment, the isolation structure 110 is disposed in the substrate 100. In this embodiment, the isolation structure 110 is, for example, a shallow trench isolation (STI) structure. In this embodiment, the material of the isolation structure 110 is, for example, silicon oxide. In this embodiment, as shown in FIGS. 2 to 4, the top surface of the isolation structure 110 is higher than the top surface of the substrate 100. In other embodiments, the top surface of the isolation structure 110 may be substantially coplanar with the top surface of the substrate 100. In this embodiment, as shown in FIGS. 1 and 2, the doped region TD ₂ and the doped region RD ₁ are separated by the isolation structure 110, and the doped region TD ₂ and the doped region RD ₂ are separated by the isolation structure 110. open. In this embodiment, as shown in FIGS. 1 and 4, the two doped regions RD ₁ are separated by the isolation structure 110, and the two doped regions RD ₂ are separated by the isolation structure 110. In this embodiment, as shown in FIG. 1, the isolation structure 110 surrounds and covers _{the sidewall of the doped region RD 1} , and the isolation structure 110 surrounds and covers the sidewall of the _{doped region RD 2.}

In this embodiment, as shown in FIGS. 1 and 3, the word line WL is disposed on the substrate 100, and the doped region TD ₁ and the doped region TD _{2 are} located on opposite sides of the word line WL. In detail, in this embodiment, a part of the word line WL located between the doped region TD ₁ and the doped region TD ₂ can be used as the gate of the transistor T, and the doped region TD ₁ and the doped region TD ₂ can be used as the terminal of transistor T respectively. For example, in one embodiment, the doped region TD ₁ can be used as the source of the transistor T, and the doped region TD ₂ can be used as the drain of the transistor T. In other words, the doped region TD ₁ and the doped region TD ₂ can be regarded as the doped regions of the transistor T. _{In this embodiment, only one doped region TD 1} is provided between the two word lines WL (that is, between the two gates of the two transistors T). In other words, two adjacent transistors T in the second direction X share the same doped region TD ₁ . For example, in one embodiment, the doped region TD ₁ can be used as a common source region.

In this embodiment, the material of the word line WL may include a conductive material, such as polysilicon (Polysilicon) or a metal material, and the metal material is, for example, tungsten (W), aluminum (Al), or copper (Cu). In this embodiment, as shown in FIGS. 1, 3, and 4, the spacers SP are located on the substrate 100 on opposite sides of the character line WL, and the spacers SP may be a strip structure extending along the first direction Y , Which can protect the sidewall of the word line WL to electrically isolate the word line WL from the conductive elements (for example, the contact structure C1, the contact structure C2, and the contact structure C3). In this embodiment, the material of the spacer SP may include silicon _{oxide (SiO 2} ), silicon nitride (Si ₃ N ₄ ), or other low-k materials. In some embodiments, a gate dielectric layer (not shown) may be disposed between the word line WL and the substrate 100 to electrically isolate the gate of the transistor T from the substrate 100.

As mentioned above, the doped region RD ₁ , the doped region TD ₂ and the doped region RD ₂ are arranged in sequence along the first direction Y. Therefore, in this embodiment, the doped region TD ₁ and the doped region RD ₁ They are also located on opposite sides of the word line WL, and the doped region TD ₁ and the doped region RD ₂ are also located on opposite sides of the word line WL.

In the present embodiment, the source line SL disposed on the substrate 100, source line SL and the doped region is electrically connected TD _1. In detail, as shown in FIG. 1 and FIG. 3, the source line SL is electrically connected _{to the doped region TD 1 through at least one contact structure C1.} In this embodiment, the material of the contact structure C1 may include a conductive material, such as a metal material or a metal nitride, and the metal material is, for example, tungsten, titanium (Ti), tantalum (Ta), copper (Cu), or aluminum (Al ), the metal nitride is, for example, titanium nitride (TiN) or tantalum nitride (TaN). In addition, although the drawing is not shown, anyone with ordinary knowledge in the art should understand that the contact structure C1 penetrates through the dielectric layer (not shown) disposed on the substrate 100 and is electrically connected to the doped region TD ₁ . In addition, the source line SL is omitted in FIG. 2.

As mentioned above, in the second direction X, two adjacent transistors T share the same doped region TD ₁ , whereby the source line SL electrically connected to the doped region TD ₁ acts as in the second direction X The common source line of two adjacent transistors T.

In this embodiment, the bit line BL1 and the bit line BL2 are arranged on the substrate 100. As shown in FIG. 1, the word lines WL extend along the first direction Y and are arranged along the second direction X, the source lines SL extend along the second direction X, and the bit lines BL1 and BL2 extend along the second direction X Extend and arrange along the first direction Y. In this embodiment, the word line WL intersects the source line SL, the bit line BL1 and the bit line BL2, and the source line SL, the bit line BL1 and the bit line BL2 are arranged in parallel to each other. In addition, in the first direction Y, the source line SL is located between the bit line BL1 and the bit line BL2. In this embodiment, the material of the bit line BL1 and the bit line BL2 may include a conductive material (for example, a metal material), and the metal material is, for example, tungsten, copper, or aluminum.

In this embodiment, the resistive memory R1 and the resistive memory R2 are disposed on the substrate 100. In this embodiment, the resistive memory R1 and the resistive memory R2 each include a lower electrode E1, an upper electrode E2, and a variable resistance layer RV, the upper electrode E2 is disposed on the lower electrode E1, and the variable resistance layer RV is disposed Between the lower electrode E1 and the upper electrode E2.

The materials of the lower electrode E1 and the upper electrode E2 are not particularly limited, and any conductive material can be used. For example, the materials of the lower electrode E1 and the upper electrode E2 may be titanium (Ti), tantalum (Ta), titanium nitride (TiN), tantalum nitride (TaN), titanium aluminum nitride (TiAlN), titanium tungsten (TiW) alloy, tungsten, ruthenium (Ru), platinum (Pt), iridium (Ir), graphite or a mixture or stack of the above materials, among which titanium nitride, tantalum nitride, platinum, iridium, graphite or Its combination. The thickness of the lower electrode E1 and the upper electrode E2 is not particularly limited, but is usually between 5 nanometers (nm) and 500 nanometers.

The material of the variable resistance layer RV is not particularly limited, and any material that can change its own resistance through the application of voltage can be used. In this embodiment, the material of the variable resistance layer RV includes, for example, hafnium oxide (HfO ₂ ), tantalum oxide (Ta ₂ O ₅ ), titanium oxide (TiO ₂ ), magnesium oxide (MgO), nickel oxide (NiO), Niobium oxide (Nb ₂ O ₅ ), aluminum oxide (Al ₂ O ₃ ), vanadium oxide (V ₂ O ₅ ), tungsten oxide (WO ₃ ), zinc oxide (ZnO) or cobalt oxide (CoO). In an embodiment, the variable resistance layer RV may be formed by a physical vapor deposition method or a chemical vapor deposition method. In another embodiment, considering that the thickness of the variable resistance layer RV usually needs to be limited to a very thin range (for example, 2 nm to 10 nm), it can be formed by atomic layer deposition.

In this embodiment, as shown in FIGS. 2 and 4, in the thickness direction Z of the substrate 100, the resistive memory R1 is located between the substrate 100 and the bit line BL1, and the resistive memory R2 is located between the substrate 100 and the bit line BL1. Between bit lines BL2. In this embodiment, the thickness direction Z of the substrate 100 intersects the first direction Y and the second direction X. For example, the thickness direction Z of the substrate 100 may be substantially orthogonal to the first direction Y, and the thickness direction Z of the substrate 100 may be substantially orthogonal to the second direction X.

From another viewpoint, in the present embodiment, the doped region is connected via a resistor RD ₁ of formula R1-volatile memory electrically to the bit line BL1, and doped region RD ₂ connected via a resistor R2 electrically formula to the bit memory Element line BL2. 2 and 4, the doped region RD ₁ sequentially via at least one contact structure C2, R1 and resistive memory structure at least one contact C4 is connected electrically to the bit line BL1, and doped region RD ₂ It is electrically connected to the bit line BL2 through at least one contact structure C3, resistive memory R2, and at least one contact structure C5 in sequence.

In this embodiment, the materials of the contact structure C2, the contact structure C3, the contact structure C4, and the contact structure C5 may include conductive materials, such as metal materials or metal nitrides, such as tungsten, copper (Cu), Aluminum (Al), titanium (Ti), or tantalum (Ta), and the metal nitride is, for example, titanium nitride (TiN) or tantalum nitride (TaN). In one embodiment, the contact structure C2 for connecting the resistive memory R1 and the doped region RD _{1 and} the contact structure C3 for connecting the resistive memory R2 and the doped region RD ₂ can be formed in the same process step . In one embodiment, the contact structure C4 for connecting the bit line BL1 and the resistive memory R1 and the contact structure C5 for connecting the bit line BL2 and the resistive memory R2 can be formed in the same process step. In addition, although the drawings are not shown, anyone with ordinary knowledge in the relevant technical field should understand that the contact structure C2, the contact structure C3, the contact structure C4, and the contact structure C5 respectively penetrate through the dielectric layer ( Not shown), and are electrically connected to the doped region RD ₁ , the doped region RD ₂ , the resistive memory R1, and the resistive memory R2 respectively.

As mentioned above, the doped region TD _{2 (that is, the doped region of the transistor T) is separated from the doped region RD 1} electrically connected to the resistive memory R1 and the bit line BL1 via the isolation structure 110. And the doped region TD ₂ (ie, the doped region of the transistor T) is separated from the doped region RD ₂ electrically connected to the resistive memory R2 and the bit line BL2 via the isolation structure 110. In this way, as shown in FIG. 5, when a voltage is applied to a word line WL (the word line WL on the right side of FIG. 1) and the bit line BL1, the selected resistive memory R1 and transistor Between the doped region TD _{2 of} T, a depletion region F that crosses the isolation structure 110 and is connected to the doped region TD _{2 of the transistor T is generated at the interface between the doped region RD 1} and the body region B due to the application of a voltage. There is a conduction path (shown by arrow A); while the unselected resistive memory R2 does not have enough voltage to generate a depletion region in the low voltage or floating state, so that there is a gap between it and the transistor T The isolation structure 110 is in an open circuit state. That is, through the doped region TD ₂ (that is, the doped region of the transistor T) is separated from the doped region RD ₁ and the doped region RD ₂ through the isolation structure 110, and the resistive memory device 10 is executed When a voltage is applied, a selected resistive memory (such as the resistive memory R1 in Figure 5) and the transistor T will be conductive, and the remaining unselected resistive memory (such as the resistance in Figure 5) Type memory R2) is electrically insulated from transistor T. In view of this, during the operation of the resistive memory device 10, the transmission path of the sneak current is cut off, so that the current of the selected resistive memory can be accurately read and the state can be judged. In this embodiment, the voltage application operation may include a formation program, an initial reset operation, a reset operation, a setting operation, a writing operation, a reading operation, or a combination thereof.

Although the resistive memory R1 is taken as an example of the selected resistive memory in the foregoing description, anyone with ordinary knowledge in the technical field can obviously understand from the foregoing description that the resistive memory R1 and the resistive memory R2 respectively by applying a voltage to the bit line BL1 and bit line BL2 and TD doped region of the transistor T ₂ to achieve electrical conduction. In this way, in the resistive memory device 10, the transistor T, the resistive memory R1, and the resistive memory R2 form a structure with a single transistor connecting two memories at the same time (that is, the 1T2R structure) Memory cell MC. From another point of view, the resistive memory R1 and the resistive memory R2 located on both sides of the transistor T in the first direction Y will share the same doped region TD ₂ . For example, in one embodiment, the doped region TD ₂ can be used as a common drain region.

In this embodiment, in order to effectively cut off the transmission path of the latent leakage current and accurately read the current of the selected resistive memory, the thickness direction Z of the isolation structure 110 in the substrate 100 can be adjusted according to the applied voltage. The thickness t1 of the upper part is so that the isolation structure 110 can electrically insulate the unselected resistive memory from the transistor T, and enable the depletion region generated by the applied voltage to cross the isolation structure 110 and allow the selected resistive type The memory is electrically connected to the transistor T. Similarly, in this embodiment, in order to effectively cut off the transmission path of the latent leakage current and accurately read the current of the selected resistive memory, the doped region TD ₂ and the doped region can be adjusted according to the applied voltage. heteroaryl region RD isolation structure 110 between _a shortest distance d1 in a first direction Y, and the TD ₂ doped region doped isolation region 110 RD shortest distance d2 in the first direction Y between the _two structures, In this way, the unselected resistive memory can be electrically insulated from the transistor T, and the selected resistive memory can be electrically connected to the transistor T.

The isolation structure 110 arranged between the doped region TD ₂ and the doped region RD _{1, and} between the doped region TD ₂ and the doped region RD ₂ can be used to control the conduction or disconnection of the resistive memory and the transistor to solve the problem. Switch for latent leakage current problem. In other words, the switch used to control the conduction or disconnection of the resistive memory and the transistor to solve the problem of latent leakage current is built in the resistive memory device 10. In this way, the resistive memory device 10 not only has a structure in which a single transistor is connected to two memories at the same time, it can avoid latent leakage currents, but it can also be manufactured compatible with existing processes without the need for additional light. Cover manufacturing process.

In one embodiment, in the thickness direction Z of the substrate 100, the thickness t1 of the isolation structure 110 may be between about 50 nanometers and about 500 nanometers. In addition, in one embodiment, in the first direction Y, _{the shortest distance d1 between the doped region TD 2} and the doped region RD ₁ may be between about 30 nanometers and about 300 nanometers. The shortest distance d2 between the region TD ₂ and the doped region RD ₂ may be between about 30 nanometers and about 300 nanometers.

In the present embodiment, as shown in FIG. 1, in the first direction Y, length d3 TD doped region doped region ₁ is the same as the length d4 ₂ in TD.

FIG. 6 is a schematic top view of a resistive memory device according to another embodiment of the present invention. 6 and 1 at the same time, the resistive memory device 20 of FIG. 6 is similar to the resistive memory device 10 of FIG. 1, so the same or similar components are represented by the same or similar symbols, and the same technical content is omitted instruction of.

Referring to FIG 6, the resistive memory device 20, in the first direction Y, less than ₂ doped region doped region TD TD length d3 ₁ a length d5. Since the doped region TD ₂ has a shortened length d5, _{the distance between the doped region RD 1} and the doped region RD ₂ disposed on both sides of the doped region _{TD 2} in the first direction Y, and the resistive memory R1 The distance to the resistive memory R2 can be shortened. In this way, when manufacturing the resistive memory device 20, the size of the memory cell MC can be effectively reduced, so that more memory cells MC can be laid out in the same area. In addition, the doped region TD ₂ is divided into two parts, one of which has a length d4 and the other part has a shortened length d5, that is, the doped region TD ₂ has two different lengths in the first direction Y. However, the present invention is not limited to this. In other embodiments, the doped region TD ₂ may only have a shortened length d5 in the first direction Y.

FIG. 7 is a schematic top view of a resistive memory device according to another embodiment of the present invention. Please refer to FIGS. 7 and 1 at the same time. The resistive memory device 30 of FIG. 7 is similar to the resistive memory device 10 of FIG. instruction of.

Referring to FIG. 7, in the resistive memory device 30, each memory cell MC includes a single transistor T and a plurality of resistive memories R1 to Rn. In other words, the memory cell MC has a structure in which a single transistor is connected to multiple memories at the same time (that is, a 1TnR structure, where n is an integer greater than 1). From another point of view, the resistive memories R1 to Rn arranged on one side of the transistor T along the second direction X share the same doped region TD ₂ . For example, the doped region TD ₂ can be used as a common drain region.

In this embodiment, the resistive memory device 30 includes a plurality of doped regions RD ₁ ˜RD _n in the substrate 100 and a plurality of bit lines BL1 ˜BLn on the substrate 100. _{According to the previous description of the doped region RD 1} , doped region RD ₂ , bit line BL1, bit line BL2, resistive memory R1 and resistive memory R2 in conjunction with FIGS. 1 to 4, in any technical field those having ordinary skill will appreciate, RRAM Rn is electrically connected to the doped region RD _n, and the bit line BLn via the at least one contact structure (not shown) via at least one contact structure (not shown) and It is electrically connected to the resistive memory Rn. That is, via a doped region RD _n RRAM Rn is electrically connected to the bit line BLn. As a result, the memory resistance R1 ~ Rn respectively to the bit line by applying a voltage BL1 ~ BLn TD doped region of the transistor T ₂ to achieve electrical conduction.

In this embodiment, the word lines WL and the bit lines BL1 ˜BLn are arranged in parallel to each other and extend along the first direction Y, and the word lines WL and the bit lines BL1 ˜BLn are arranged along the second direction X. In this embodiment, the source lines SL extend in the second direction X and are arranged in the first direction Y. That is, the source line SL intersects the word line WL and the bit lines BL1 ˜BLn. In addition, in this embodiment, the source line SL is located in a film layer different from the bit lines BL1 to BLn.

In this embodiment _{, the shortest distance d6 between the doped region RD 1} and the doped region RD ₂ in the second direction X is designed to be greater than the distance between the doped region TD ₂ and the doped region RD ₁ in the first direction. The shortest distance d1 on Y is greater than the shortest distance d2 between the _{doped region TD 2} and the doped region RD _{2 in the first direction Y.} That is, the doped region RD ₁ ~ RD _n between any two adjacent doped regions of the second shortest distance in the X direction may be greater than doped regions RD ₁ ~ RD _n any one of the transistor T The shortest distance between the doped regions TD ₂ in the first direction Y. In this way, when the voltage application operation is performed on the resistive memory device 30, the depletion region generated by the applied voltage can make the selected resistive memory and the doped region TD _{2 of the} transistor T formed between The conduction path does not cause a conduction path to be formed between the selected resistive memory and the adjacent unselected resistive memory, so as to prevent the adjacent resistive memory from affecting each other during operation.

In the present embodiment, in the first direction Y, length d3 TD doped region doped region ₁ is the same as the length d4 ₂ in TD.

FIG. 8 is a schematic top view of a resistive memory device according to another embodiment of the present invention. 8 and 7 at the same time, the resistive memory device 40 of FIG. 8 is similar to the resistive memory device 30 of FIG. 7, so the same or similar components are represented by the same or similar symbols, and the same technical content is omitted instruction of.

Referring to FIG 8, in a resistive memory device 40, in the first direction Y, less than ₂ doped region doped region TD TD length d3 ₁ a length d7. Since TD ₂ doped region having a shortened length D7, 40, can effectively reduce the size of the memory cell MC, whereby the layout of the memory cell MC more in the same area in the production of a resistive memory device. In addition, the doped region TD ₂ is divided into two parts, one of which has a length d4 and the other has a shortened length d7, that is, the doped region TD ₂ has two different lengths in the first direction Y. However, the present invention is not limited to this. In other embodiments, the doped region TD ₂ may only have a shortened length d7 in the first direction Y.

Although the present invention has been disclosed in the above embodiments, it is not intended to limit the present invention. Anyone with ordinary knowledge in the technical field can make some changes and modifications without departing from the spirit and scope of the present invention. The scope of protection of the present invention shall be subject to those defined by the attached patent scope.

10, 20, 30, 40: resistive memory device 100: substrate 110: isolation structure A: arrow B: body area BL1, BL2, BLn: bit line C1, C2, C3, C4, C5: contact structure d1 d2, d6: shortest distance d3, d4, d5, d7: length E1: lower electrode E2: upper electrode F: depletion region MC: memory cell R1, R2, Rn: resistive memory RV: variable resistance layer SL: source Polar line SP: spacer t1: thickness T: transistors TD ₁ , TD ₂ , RD ₁ , RD ₂ , RD _n : doped area WL: character line X: second direction Y: first direction Z: thickness direction

FIG. 1 is a schematic top view of a resistive memory device according to an embodiment of the present invention. Fig. 2 is a schematic cross-sectional view taken along the section line I-I' of Fig. 1. Fig. 3 is a schematic cross-sectional view taken along the line II-II' of Fig. 1. Fig. 4 is a schematic cross-sectional view taken along the line III-III' of Fig. 1. 5 is a schematic cross-sectional view of a state when a voltage is applied to a part of the memory in the resistive memory device of FIG. 1. FIG. 6 is a schematic top view of a resistive memory device according to another embodiment of the present invention. FIG. 7 is a schematic top view of a resistive memory device according to another embodiment of the present invention. FIG. 8 is a schematic top view of a resistive memory device according to another embodiment of the present invention.

10: Resistive memory device

100: base

110: Isolation structure

BL1, BL2: bit line

C1, C2, C3, C4, C5: contact structure

d1, d2: shortest distance

d3, d4: length

MC: memory cell

R1, R2: Resistive memory

SL: source line

T: Transistor

TD ₁ , TD ₂ , RD ₁ , RD ₂ : doped area

WL: Character line

X: second direction

Y: first direction

Z: thickness direction

Claims (11)

A resistive memory device includes: The substrate includes a body region, a first doped region, a second doped region, and a third doped region, wherein the first doped region and the second doped region are separated by the body region; An isolation structure configured in the substrate, wherein the second doped region and the third doped region are separated by the isolation structure; The character line is disposed on the substrate, wherein the first doped region and the second doped region are located on opposite sides of the character line, and the first doped region and the third doped region are located on the The opposite sides of the character line; The source line is disposed on the substrate and is electrically connected to the first doped region; The first bit line is arranged on the substrate; and The first resistive memory is disposed on the substrate, wherein in the thickness direction of the substrate, the first resistive memory is located between the substrate and the first bit line, and the third doped region passes through The first resistive memory is electrically connected to the first bit line. The resistive memory device according to claim 1, wherein the substrate further includes a fourth doped region, wherein the second doped region and the fourth doped region are separated by the isolation structure, and the first doped region The impurity region and the fourth doped region are located on the opposite sides of the word line. The resistive memory device according to claim 2, further comprising: The second bit line is arranged on the substrate; and The second resistive memory is disposed on the substrate, wherein in the thickness direction of the substrate, the second resistive memory is located between the substrate and the second bit line, and the fourth doped region It is electrically connected to the second bit line through the second resistive memory. The resistive memory device according to claim 3, wherein the word line extends along a first direction, the source line, the first bit line, and the second bit line extend along the second direction, the The first direction intersects the second direction, and the thickness direction of the substrate intersects the first direction and the second direction. The resistive memory device according to claim 4, wherein in the first direction, the second doped region is located between the third doped region and the fourth doped region, and the source line is located at the Between the first bit line and the second bit line. The resistive memory device according to claim 4, wherein in the first direction, the length of the first doped region is the same as the length of the second doped region. The resistive memory device according to claim 4, wherein in the first direction, the length of the first doped region is different from the length of the second doped region. The resistive memory device according to claim 3, wherein the word line, the first bit line, and the second bit line are arranged parallel to each other and extend along a first direction, and the first bit line and the second bit line The second bit lines are arranged along the second direction, the source lines extend along the second direction and are arranged along the first direction, the first direction intersects the second direction, and the thickness direction of the substrate intersects the first direction. One direction and the second direction. The resistive memory device according to claim 8, wherein the third doped region and the fourth doped region are arranged along the second direction. The resistive memory device according to claim 9, wherein the shortest distance in the second direction between the third doped region and the fourth doped region is greater than that between the second doped region and the third doped region The shortest distance between the impurity regions in the first direction and the shortest distance between the third doped region and the fourth doped region in the second direction is greater than that of the second doped region and the fourth doped region. The shortest distance between the doped regions in the first direction. The resistive memory device according to claim 3, wherein the first resistive memory and the second resistive memory respectively include: Lower electrode The upper electrode is arranged on the lower electrode; and The variable resistance layer is arranged between the lower electrode and the upper electrode.

Images