TW202140738A - Liquid composition for semiconductor process and polishing method of substrate applying the same - Google Patents

Abstract

This invention aims at providing a liquid composition for semiconductor processing and polishing method of substrate applying the same. By minimizing multiplications of microorganisms, the composition may minimize defects caused by physical factors and chemical factors when being used for semiconductor manufacturing and processing, and thus, the defect level on the surface of a semiconductor may be raised to high level. Specifically, the liquid composition for semiconductor processing includes organic-inorganic particles, a thiazolinone compound and a solvent, and a microorganism reduction index in accordance with a following formula 1 being more than 4. In the following formula 1, CFU0 is a CFU/mL value of an added microorganism, CFUX is a CFU/mL value of remaining microorganisms after the microorganisms stand at normal temperature for X days, the microorganisms include at least one of Escherichia coli, Candida albicans and Agaricus brasiliensis, and X is an integer ranging from 1 to 5. The microorganism reduction index (in the formula 1) is equal to log (CFU0/CFUX).

Description

Liquid for semiconductor processing and method for polishing substrate using it

The present invention relates to a liquid composition used in semiconductor manufacturing and processing and a method for polishing a substrate using the same, and in particular to a liquid composition that can be applied to manufacturing and processing requiring precision processing in a very clean environment and using the same The method of polishing the substrate with reduced defects.

In recent years, with the increase in area, miniaturization, and high density of semiconductor devices, sophistication is required for pattern formation technology. Since the surface structure of a semiconductor device is very complicated, it is very important not to form so-called defects such as surface scratches or foreign matter adsorption during processing through treatments such as polishing and patterning. There may be a variety of factors that cause the above-mentioned defects. One example may include foreign objects that cause physical scratches, and another example may include microorganisms that cause physical adsorption or chemical scratches, and the like. Recently, the level of defect prevention required in the field of semiconductor technology is very high, and its purpose is to make the defects on the wafer surface practically zero (zero). This defect level is actually difficult to achieve, and therefore various researches are being conducted to achieve the above defect level. (Existing technical literature) (Patent Document) (Patent Document 1) International Patent Publication No. 2017-200297

The problem to be solved by the invention

An embodiment of the present invention aims to provide a liquid composition that effectively inhibits the breeding environment of microorganisms so that an excellent defect reduction effect can be achieved when applied to semiconductor processing, and a method of polishing a substrate using the liquid composition.

Solution to the problem

An embodiment of the present invention provides a liquid composition for semiconductor processing, the liquid composition for semiconductor processing includes organic-inorganic particles, thiazolinone (thiazolinone) compound and solvent, and according to the following formula 1 The microbial reduction index is 4 or more. [Formula 1] Microbial reduction index = log (CFU ₀ /CFU _X )

In the above formula 1, the above CFU ₀ is the CFU/mL value of the added microorganisms, and the above CFU _X is the CFU/mL value of the remaining microorganisms after standing at room temperature for X days. The above microorganisms include E. coli and white At least one of C. albicans and A. brasiliensis , where X is 1, 2, 3, 4, 5 or 6.

Another embodiment of the present invention provides a substrate polishing method for polishing a substrate by applying the liquid composition for semiconductor processing as described above.

Invention effect

In the above-mentioned liquid composition for semiconductor processing and the method for polishing a substrate using the same, the above-mentioned liquid composition is a composition that minimizes the propagation of microorganisms. When used in semiconductor manufacturing and processing, it is not only caused by physical factors. Minimization of defects also minimizes defects caused by chemical factors, which can increase the level of defects on the semiconductor surface to a high level.

The advantages, features, and methods of implementing the present invention can be clearly understood by referring to the embodiments described later. However, the present invention is not limited to the embodiments disclosed below, but can be implemented in a variety of different forms. This embodiment is provided only to complete the disclosure of the present invention and to provide complete information to those of ordinary skill in the art to which the present invention belongs. Explain the scope of the invention, the invention is only defined by the scope of the patent application.

Unless otherwise specified, the "comprising" in this specification means that other constituent elements can be further included.

In this specification, ppm is based on weight.

In this manual, about 24 hours a day is used as a standard.

An embodiment of the present invention provides a liquid composition for semiconductor processing (hereinafter may be referred to as a "liquid composition"), the liquid composition for semiconductor processing includes organic-inorganic particles, a thiazolinone compound, and a solvent , And the microbial reduction index according to the following formula 1 is 4 or more. [Formula 1] Microbial reduction index = log (CFU ₀ /CFU _X )

In the above formula 1, the above CFU ₀ is the CFU/mL value of the added microorganisms, and the above CFU _X is the CFU/mL value of the remaining microorganisms after being allowed to stand at room temperature for X days.

In this specification, "CFU/mL" refers to the colony forming unit (Colony Forming Unit) of microorganisms. Since the live microorganisms in the sample grow to form colonies, when the number of these colonies is counted, the number can be used as an indicator for determining the number of live microorganisms in the sample. The number of microorganisms determined by the colony forming ability may be different from the number of microorganisms determined by microscopic observation or the like. This is because the number of microorganisms measured by microscope observation is the total number of microorganisms measured without distinguishing between live microorganisms and dead microorganisms, but the number of microorganisms measured by colony forming ability is equivalent to the number of live microorganisms.

As shown in the following general formula 1, the above-mentioned colony forming ability (CFU/mL) is obtained by dividing the number of colonies of growing microorganisms by the dilution factor and dividing by the inoculum amount (mL). [General formula 1] Colony forming ability (CFU/mL) = number of colonies х1/dilution times х1/inoculation volume (mL)

In the above-mentioned liquid composition according to an embodiment, the microbial reduction index according to the above-mentioned formula 1 satisfies 4 or more, for example, it may be 4 to 15, for example, 4 to 12, for example, 4 to 10, for example, 4 to 9. The larger the aforementioned microbial reduction index is within the aforementioned range, the smaller the amount of residual microorganisms remaining after a predetermined time has elapsed compared with the amount of added microorganisms.

In the above liquid composition according to one embodiment, the log (CFU ₀ /CFU ₄ ) value of the above formula 1 may be equal to or greater than the log (CFU ₀ /CFU ₁ ) value, and the log (CFU ₀ /CFU _{6) value of the above formula 1} ) Value can be equal to or greater than log (CFU ₀ /CFU ₄ ) value. By making the above-mentioned microorganism reduction index exhibit the above-mentioned trend, the long-term stability of the above-mentioned liquid composition can be greatly improved.

The microbial reduction index of the above-mentioned liquid composition can be determined under the comprehensive influence of the type, content, and mixing process of the various components contained in the above-mentioned liquid composition.

The above-mentioned microorganisms can be at least one of E. coli , C. albicans and A. brasiliensis , or a mixed microorganism formed by mixing two or three of these microorganisms .

E. coli refers to Escherichia coli , which is used as an indicator of bactericidal properties.

C. albicans refers to Candida albicans , namely Candida albicans, which is a kind of incomplete fungus and is used as an indicator of the fungicidal properties of yeasts.

A. brasiliensis refers to Agaricus brasiliensis , or Brazilian koji, which is a type of mold and is used as an indicator of the fungicidal properties of molds.

The above-mentioned microorganisms are applied to the evaluation of the above-mentioned microorganism reduction index in a single or mixed form. At this time, the above-mentioned microorganisms used grow in the medium to have a constant number of colonies. As the medium used at this time, any general medium suitable for cultivating the above-mentioned microorganisms may be used.

The above-mentioned organic-inorganic particles can be used for polishing or cleaning the semiconductor surface. Specifically, the aforementioned organic-inorganic particles may include those selected from the group consisting of silicon oxide particles, cerium oxide particles, titanium oxide particles, zirconium oxide particles, inorganic composite particles, organic-inorganic composite particles, and combinations thereof. A sort of.

The above-mentioned inorganic composite particles may be particles formed by mixing at least two or more of the above-mentioned organic-inorganic components. For example, they may be silicon-cerium oxide particles, but are not limited thereto.

The organic-inorganic composite particles may be core-shell particles, and the core-shell particles include: a core including a polymer resin; and a shell, which is arranged on the surface of the core and includes an inorganic component. For example, the polymer resin of the above-mentioned core may include polyalkyl(meth)acrylate resin, polystyrene resin, etc., and the above-mentioned shell may include a silicon oxide component or a cerium oxide component, or the like.

The content of the organic-inorganic particles in the liquid composition for semiconductor processing may include about 1.5 weight percent to about 20 weight percent, for example, about 5 weight percent to about 16 weight percent, for example, about 9 weight percent. To about 15 weight percent, for example, it may contain about 10 weight percent to about 13.5 weight percent. With the content within the above range, the organic-inorganic particles can be uniformly dispersed in the liquid composition, and when the liquid composition is applied to semiconductor processing, the semiconductor surface can be flat without reducing the formation The reliability of the wiring layer on the above surface.

In the particle size distribution of the organic-inorganic particles, the 10% cumulative mass particle distribution diameter D10 may be about 40 nm to about 70 nm, and the 90% cumulative mass particle distribution diameter D90 may be about 100 nm to about 130 nm. Specifically, the above-mentioned D10 may be about 50 nm to about 60 nm, and the above-mentioned D90 may be about 110 nm to about 120 nm.

In addition, in the particle size distribution of the organic-inorganic particles, the cumulative mass 50% of the particle distribution diameter D50 may be about 70 nm to about 100 nm, for example, about 80 nm to about 90 nm.

In addition, in the particle size distribution of the aforementioned organic-inorganic particles, D90/D50 may be about 1.2 to about 1.5, D90/D10 may be about 1.8 to about 2.4, and D50/D10 may be about 1.3 to about 1.8.

When the particle size distribution of the aforementioned organic-inorganic particles satisfies the aforementioned characteristics, the defect prevention performance of the aforementioned liquid composition for semiconductor processing can be improved, and it is also advantageous in preventing the inhabitation of microorganisms.

The content of the thiazolinone compound in the liquid composition for semiconductor processing may be greater than about 100 ppm (0.01 weight percent) and equal to or less than about 1200 ppm (0.12 weight percent), for example, it may be about 150 ppm (0.015 weight percent) ) To about 1150 ppm (0.115 weight percent), for example, about 200 ppm (0.02 weight percent) to about 1000 ppm (0.1 weight percent), for example, about 500 ppm (0.05 weight percent) to about 1000 ppm (0.1 weight percent). When the content of the above-mentioned thiazolinone compound is within the above-mentioned range, it may be advantageous to realize the microorganism reduction index of the above-mentioned liquid composition for semiconductor processing within the above-mentioned range.

Specifically, the above-mentioned thiazolinone-based compound is a compound containing thiazolinone or its derivative, and its type is not particularly limited. For example, it may contain selected from methylisothiazolinone (MIT, Methylisothiazolinone), chloromethyl Isothiazolinone (CMIT, Chloromethylisothiazolinone), Benzisothiazolinone (BIT, Benzisothiazolinone), Octylisothiazolinone (OIT, Octylisothiazolinone), Dichlorooctylisothiazolinone (DCOIT, Dichlorooctylisothiazolinone), Butyl One of the group consisting of benzothiazolinone (BBIT, Butylbenzisothiazolinone) and its combination. For example, the aforementioned thiazolinone-based compound may include benzisothiazolinone. By using the thiazolinone compound as described above, it can be advantageous to ensure the required microbial reduction index.

The reduction rate of the compound according to the following formula 2 of the thiazolinone compound in the liquid composition for semiconductor processing may be less than 2%. [Equation 2] Compound reduction rate (%)=(D1-D2)/D1х100

In the above formula 2, the above D1 is the content of the thiazolinone compound measured at room temperature, and the above D2 is the content of the thiazolinone compound measured after storing at 65°C for 1 day.

Specifically, the compound reduction rate of the thiazolinone-based compound according to the following formula 2 in the liquid composition for semiconductor processing may be equal to or less than 1.9%, for example, it may be equal to or less than 1.5%.

When the above-mentioned thiazolinone-based compound satisfies the reduction rate range of the above-mentioned condition, it achieves excellent compatibility with the above-mentioned liquid composition, and thus is compatible with components other than the above-mentioned thiazolinone-based compound among the components contained in the above-mentioned liquid composition. The interaction between the two components can be beneficial to achieve the performance of preventing microorganisms from multiplying as a whole.

The above-mentioned compound may be present in the above-mentioned liquid composition in an ionized or non-ionized form. Therefore, the total content detected in ionized or non-ionized form is regarded as the content of the aforementioned compound.

The above-mentioned liquid composition for semiconductor processing may contain a water-soluble solvent such as distilled water or a fat-soluble solvent such as paraffin, as a solvent used as both a dispersion medium for the above-mentioned organic-inorganic particles and a dissolution medium for other components .

The content of the solvent in the liquid composition may be equal to or greater than 79.88 weight percent, for example, it may be about 79.88 weight percent to about 98.4 weight percent, for example, it may be about 83.9 weight percent to about 94.9 weight percent, for example, it may be about 84.9 weight percent. The weight percent to about 91 weight percent, for example, can be about 86.4 to 89.9 weight percent.

The above-mentioned liquid composition for semiconductor processing may further include one selected from the group consisting of zwitterionic compounds, water-soluble polymers, organic acids, azole compounds, glycol compounds, and combinations thereof.

The above-mentioned zwitterionic compounds may include selected from the group consisting of Imino Diacetic Acid (IDA), Nitrilotriacetic acid, N-Oxalylglycine, and acetylcysteine (acetylcysteine). One of the group consisting of) and its combination is most preferably iminodiacetic acid, but it is not limited thereto.

Relative to 100 parts by weight of the above-mentioned organic-inorganic particles, the above-mentioned liquid composition for semiconductor processing may further include 0.1 parts by weight to 5 parts by weight of the above-mentioned zwitterionic compound, for example, may further include 0.1 parts by weight to 3 parts by weight. The aforementioned zwitterionic compound, for example, may further contain 0.1 to 2 parts by weight of the aforementioned zwitterionic compound.

The above water-soluble polymer may include one selected from the group consisting of polyvinylpyrrolidone, polyvinyl alcohol, polyethylene glycol, polymethacrylic acid, and combinations thereof, and polyvinylpyrrolidone is most preferred, but is not limited thereto.

The weight average molecular weight (Mw) of the above-mentioned water-soluble polymer may be 2,500 to 100,000 ear swallows, for example 3,000 to 50,000 ear swallows, for example, 3,500 to 10,000 ear swallows are suitable.

With respect to 100 parts by weight of the above-mentioned organic-inorganic particles, the above-mentioned liquid composition for semiconductor processing may further include 1 to 50 parts by weight of the above-mentioned water-soluble polymer, for example, 1 to 30 parts by weight of the above-mentioned water-soluble polymer. polymer.

The aforementioned organic acid may include one selected from the group consisting of acetic acid, phosphonic acid, formic acid, benzoic acid, niacin, picolinic acid, alanine, glutamic acid, phthalic acid, and combinations thereof, for example, according to an embodiment The above-mentioned liquid composition for semiconductor processing may contain acetic acid or phosphonic acid.

Relative to 100 parts by weight of the above-mentioned organic-inorganic particles, the above-mentioned liquid composition for semiconductor processing may further include 1 part by weight to 50 parts by weight of the above-mentioned organic acid, for example, may further include 1 part by weight to 40 parts by weight of the above-mentioned organic acid. Organic acid.

The above-mentioned azole compounds may comprise selected from benzotriazole (BTA), 5-methyl-1H-benzotriazole, 3-amino-1,2,4-triazole, 5-phenyl-1H-tetrazole Azole, 3-amino-5-methyl-4H-1,2,4-triazole, 5-aminotetrazole (ATA), 1,2,4-triazole, tolyltriazole and combinations thereof In one embodiment, the above-mentioned liquid composition for semiconductor processing may include benzotriazole.

The above-mentioned glycol compound may include one selected from the group consisting of polyethylene glycol, polypropylene glycol and a combination thereof. In one embodiment, the above-mentioned liquid composition for semiconductor processing may include polyethylene glycol.

In addition, the above-mentioned liquid composition for semiconductor processing may further include a polishing adjuster, a pH adjuster, and a surfactant.

The above-mentioned polishing regulator may include ammonium compounds, potassium nitrate, or amino acids and their salts, etc., but is not limited thereto. The above-mentioned compound can be used to minimize the adsorption of the above-mentioned organic-inorganic particles on the wafer surface in semiconductor processing, especially in polishing processing, to improve polishing selectivity.

When the above-mentioned liquid composition includes a polishing regulator, the above-mentioned liquid composition may include about 5 parts by weight to about 10 parts by weight, for example, about 5 parts by weight to about 9 parts by weight, relative to 100 parts by weight of the above-mentioned organic-inorganic particles, for example , About 7 parts by weight to about 9 parts by weight of the above-mentioned polishing regulator.

The above-mentioned liquid composition may contain a pH adjusting agent as required. For example, the above-mentioned pH adjusting agent may include selected from the group consisting of ammonium hydroxide (NH ₄ OH), potassium hydroxide (KOH), sodium hydroxide (NaOH), and tetramethylamine hydroxide. (TMAH), tetramethylamine (TMA) and a combination thereof, but not limited to this group.

The liquid composition may further include a surfactant to allow the organic-inorganic particles to be well dispersed in the composition. For example, the surfactant may include citric acid (CA) and polyacrylic acid (polyacrylic acid, PAA) or copolymer of acrylamide and acrylic acid, etc.

The above-mentioned liquid composition for semiconductor processing includes the above-mentioned kinds of components, and is applied to semiconductor manufacturing and processing that requires a clean environment and precise work through the microbe reduction index characteristics according to the above formula 1, thereby achieving excellent effects. In addition, by controlling the reduction rate of the thiazolinone compound according to the above formula 2 in the above-mentioned liquid composition within the above-mentioned range, it is more advantageous to obtain the above-mentioned effect.

Another embodiment of the present invention provides a substrate polishing method for polishing a substrate by applying a liquid composition for semiconductor processing. The above-mentioned liquid composition for semiconductor processing corresponds to the above-mentioned liquid composition, and therefore detailed description thereof is omitted.

As the above-mentioned substrate, any substrate used as a polishing object in semiconductor processing may be used. Specifically, a copper substrate, a tantalum substrate, a silicon substrate, or a glass substrate can be used. The above-mentioned substrate may be formed with an oxide film or a conductive film on the surface, or may not be formed with an oxide film or a conductive film. In the above-mentioned substrate having a conductive film formed on the surface, the above-mentioned conductive film may have a predetermined wiring pattern form.

The polishing method of the substrate includes: a preparation step of preparing a holding plate for fixing the substrate, that is, a polishing object, a polishing head for supporting the holding plate, and a polishing table provided with a polishing pad; and a polishing step, before being supplied On the polishing pad of the liquid composition for semiconductor processing, a predetermined pressure is applied to the polishing object to polish the surface of the polishing object, thereby preparing a polished substrate.

The above-mentioned polishing may be performed by the following process: the relative position of the above-mentioned polishing pad based on the above-mentioned object to be polished is moved at a predetermined direction and speed.

When the above-mentioned substrate polishing method is applied, the aforementioned liquid composition for semiconductor processing can be used to further reduce the defects of the substrate being polished. In fact, there are no defects. In particular, it can be significantly reduced due to the use of semiconductor Defects of the polished substrate caused by the contamination of the liquid composition itself or the polishing pad caused by the presence of microorganisms in the treated liquid composition. Specifically, the above-mentioned polished substrate may have 10 or less defects, or 5 or less defects, or 0 to 5 defects.

Specific embodiments of the present invention are presented below. However, the embodiment described below is only an example for specifically describing the present invention, and the present invention should not be construed as being limited to these examples. Below, ppm is a content evaluated based on weight.

> Examples and comparisons example >

Example 1

Prepared containing 3 weight percent of silicon oxide particles, 0.5 weight percent of acetic acid, 0.5 weight percent of phosphonic acid, 500 ppm of benzisothiazolinone (BIT, Benzisothiazolinone), 0.5 weight percent of polyethylene glycol and residual content Distilled water is a liquid composition for semiconductor processing.

Example 2

A liquid composition for semiconductor processing was prepared in the same manner as in Example 1 above except that it contained 1000 ppm of benzisothiazolinone.

Example 3

A liquid composition for semiconductor processing containing 5 weight percent of silicon oxide particles, 0.5 weight percent of acetic acid, 500 ppm of benzisothiazolinone, and residual content of distilled water was prepared.

Example 4

A liquid composition for semiconductor processing was prepared in the same manner as in Example 3 above except that it contained 1000 ppm of benzisothiazolinone.

Comparative example 1

A liquid composition for semiconductor processing was prepared in the same manner as in Example 1 above except that the benzisothiazolinone was not included.

Comparative example 2

A liquid composition for semiconductor processing was prepared in the same manner as in Example 1 above except that it contained 100 ppm of benzisothiazolinone.

Comparative example 3

A liquid composition for semiconductor processing was prepared in the same manner as in Example 3 above except that the benzisothiazolinone was not included.

Comparative example 4

A liquid composition for semiconductor processing was prepared in the same manner as in Example 3 above except that it contained 100 ppm of benzisothiazolinone.

> Evaluation >

Experimental example 1: Compatibility evaluation of thiazolinone compound and liquid composition

For the liquid compositions of each of the foregoing Examples and Comparative Examples, the content of benzothiazolinone measured at room temperature is defined as D1, and the content of benzothiazolinone measured after storage at 65°C for 1 day Defined as D2, the reduction rate of the thiazolinone compound according to the following formula 2 is derived, and the compatibility is evaluated. The results are shown in Table 1 below. [Equation 2] Compound reduction rate (%)=(D1-D2)/D1х100

Experimental example 2: Evaluation of microbial reproduction prevention performance

Microbial test strains containing Escherichia coli as bacteria and 7 kinds of bacteria, Candida albicans as yeast, and Koji brazilian as mold were added to the respective examples and comparative examples at a concentration of ^{10 6} CFU/mL (=CFU ₀₎ In the liquid composition of, after X days, CFU (=CFU _X ) is derived. The above-mentioned bacteria, yeasts and molds are all grown in the culture medium commonly used for strains. Subsequently, the microbial reduction index in each case of X=1, 4, and 6 was derived from the following formula 1, and the results are shown in Table 1 below. [Formula 1] Microbial reduction index = log (CFU ₀ / CFU _X ) Table 1 Compound reduction rate [%] Microbial reduction index X=1 X=4 X=6 Example 1 1.9 4.0 5.1 5.9 Example 2 1.5 5.1 5.4 8.4 Example 3 0.2 5.7 6.1 8.5 Example 4 0.1 7.4 8.4 10.2 Comparative example 1 - 3 2.8 2.1 Comparative example 2 2.0 3.9 3.5 3.1 Comparative example 3 - 3.6 3.2 2.6 Comparative example 4 0.5 3.8 3.3 2.9

Parts (A) to (H) of FIG. 1 show experimental photographs of the degree of microbial reproduction of the above-mentioned Examples 1 to 4 and the above-mentioned Comparative Examples 1 to 4, respectively. Specifically, part (a) of FIG. 1 is a photograph when X=0, and parts (b) to (d) of FIG. 1 show photographs when X=1, 4, and 6, respectively. With reference to the above Table 1 and Figure 1, it can be seen that the liquid compositions of the above Examples 1 to 4 are more excellent in storage stability than the liquid compositions of the above Comparative Examples 1 to 4.

Experimental example 3: Wafer polishing performance evaluation

In order to evaluate the polishing performance of the liquid composition according to the above-mentioned examples and comparative examples, for electroplated copper wafers with a thickness of about 5,000 Å, tantalum wafers with a thickness of about 2,000 Å, and silicon oxide with a thickness of about 20,000 Å The film wafer is polished while putting the above-mentioned liquid composition more than 6 days after preparation on the polishing pad. Specifically, in order to remove the oxide insulating layer on the wafer surface before the evaluation, the wafer was immersed in 0.01 M nitric acid for 10 minutes, and then polished. In addition, while adding 0.5 weight percent hydrogen peroxide (H ₂ O ₂ ) and each liquid composition at the same time, it was carried out under the conditions of a pressure of 1.55 psi, a carrier speed of 63 rpm, a platen speed of 57 rpm, and a slurry flow rate of 300 ml/min. Polish for 60 seconds.

The defect level of each wafer after the above-mentioned polishing treatment was evaluated, and the polishing performance was evaluated according to the following criteria. A defect measuring instrument (manufacturer: Tenkor, model name: XP+) was used to measure the above-mentioned defect level.

[Evaluation Criteria] ◎: Defects from 0 to 5 ○: Defects greater than 5 and equal to or less than 10 Δ: Defects greater than 10 and equal to or less than 20 X: Defects greater than 20 Table 2 Copper wafer Tantalum Wafer Silicon oxide film wafer Example 1 ○ ◎ ◎ Example 2 ◎ ◎ ◎ Comparative example 1 X X X Comparative example 2 Δ Δ X

With reference to Table 1 and Table 2 above, it can be seen that by applying the liquid compositions of Examples 1 to 2 having a microbial reduction index of 4 or more according to the above formula 1 to polishing treatment in semiconductor processing, excellent defect reduction performance can be achieved. However, it can be seen that the defect reduction performance of the liquid compositions of Comparative Examples 1 to 2 in which the microbial reduction index of the above formula 1 is less than 4 is significantly lower than that of the liquid compositions of the above Examples 1 and 2. On the other hand, it can be seen that the liquid compositions of the foregoing Examples 1 and 2 that satisfy the condition that the reduction rate of the thiazolinone compound according to the foregoing formula 2 is less than 2%, and the liquid compositions of the foregoing Comparative Examples 1 and 2 that do not satisfy the foregoing conditions In comparison, it is possible to achieve improved microbial growth prevention performance and polishing performance based on excellent compatibility with thiazolinone compounds.

none

Fig. 1 is a photograph showing the degree of microbial reproduction in each of the Examples and Comparative Examples.

Claims (12)

A liquid composition for semiconductor processing, which is characterized in that it contains organic-inorganic particles, a thiazolinone compound, and a solvent, and has a microbial reduction index of 4 or more according to the following formula 1, [Formula 1] microbial reduction index= log (CFU ₀ /CFU _X ), in the above formula 1, the above CFU ₀ is the CFU/mL value of the added microorganisms, the above CFU _X is the CFU/mL value of the remaining microorganisms after standing at room temperature for X days, the above microorganisms include At least one of Escherichia coli, Candida albicans, and Aspergillus brazii, and the aforementioned X is 1, 2, 3, 4, 5, or 6. The liquid composition for semiconductor processing according to claim 1, wherein the log (CFU ₀ /CFU ₄ ) value of the above formula 1 is equal to or greater than the log (CFU ₀ /CFU ₁ ) value, and the value of the above formula 1 The log (CFU ₀ /CFU ₆ ) value is equal to or greater than the log (CFU ₀ /CFU ₄ ) value. The liquid composition for semiconductor processing according to claim 1, wherein the microorganism reduction index is 4-15. The liquid composition for semiconductor processing according to claim 1, wherein the content of the thiazolinone compound is greater than 100 ppm and equal to or less than 1200 ppm. The liquid composition for semiconductor processing according to claim 1, wherein the thiazolinone compound is selected from the group consisting of methylisothiazolinone, chloromethylisothiazolinone, and benzisothiazolinone , Octyl isothiazolinone, dichlorooctyl isothiazolinone, butyl benzothiazolinone and one of the group consisting of combinations thereof. The liquid composition for semiconductor processing according to claim 1, wherein the organic-inorganic particles are selected from the group consisting of silicon oxide particles, cerium oxide particles, titanium oxide particles, zirconium oxide particles, and combinations thereof One of the group consisting of. The liquid composition for semiconductor processing according to claim 1, wherein the content of the solvent is equal to or greater than 79.88 weight percent. The liquid composition for semiconductor processing according to claim 1, characterized by comprising one selected from the group consisting of zwitterionic compounds, water-soluble polymers, azole compounds, glycol compounds, and combinations thereof. The liquid composition for semiconductor processing according to claim 1, which is characterized by further comprising an organic acid. The liquid composition for semiconductor processing according to claim 1, wherein the reduction rate of the thiazolinone compound in the liquid composition for semiconductor processing according to the following formula 2 is less than 2% , [Equation 2] Compound reduction rate (%)=(D1-D2)/D1х100: In the above formula 2, the above D1 is the content of the thiazolinone compound measured at room temperature, and the above D2 is the content of the thiazolinone compound measured after storing at 65°C for 1 day. The liquid composition for semiconductor processing according to claim 1, wherein, in the particle size distribution of the organic-inorganic particles, the cumulative mass 10% of the particle distribution diameter D10 is 40 nm to 70 nm, and the cumulative mass 90% The particle distribution diameter D90 is 100nm to 130nm. A method for polishing a substrate, characterized in that the substrate is polished by applying the liquid composition for semiconductor processing described in claim 1.

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