TW202139248A - Substrate support and substrate processing apparatus - Google Patents

Substrate support and substrate processing apparatus Download PDF

Info

Publication number
TW202139248A
TW202139248A TW109139444A TW109139444A TW202139248A TW 202139248 A TW202139248 A TW 202139248A TW 109139444 A TW109139444 A TW 109139444A TW 109139444 A TW109139444 A TW 109139444A TW 202139248 A TW202139248 A TW 202139248A
Authority
TW
Taiwan
Prior art keywords
edge ring
power supply
mounting table
wiring
substrate
Prior art date
Application number
TW109139444A
Other languages
Chinese (zh)
Inventor
輿水地塩
Original Assignee
日商東京威力科創股份有限公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 日商東京威力科創股份有限公司 filed Critical 日商東京威力科創股份有限公司
Publication of TW202139248A publication Critical patent/TW202139248A/en

Links

Images

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32623—Mechanical discharge control means
    • H01J37/32642—Focus rings
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/6831—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using electrostatic chucks
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32532—Electrodes
    • H01J37/32541—Shape
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32715—Workpiece holder
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H01L21/67063—Apparatus for fluid treatment for etching
    • H01L21/67069—Apparatus for fluid treatment for etching for drying etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/6831—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using electrostatic chucks
    • H01L21/6833—Details of electrostatic chucks
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/32—Processing objects by plasma generation
    • H01J2237/33—Processing objects by plasma generation characterised by the type of processing
    • H01J2237/332—Coating
    • H01J2237/3321—CVD [Chemical Vapor Deposition]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/32—Processing objects by plasma generation
    • H01J2237/33—Processing objects by plasma generation characterised by the type of processing
    • H01J2237/334—Etching

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
  • Drying Of Semiconductors (AREA)
  • Plasma Technology (AREA)

Abstract

Provided is a technique for stably applying a voltage to an edge ring. Provided is a substrate support including: a substrate mounting surface on which a substrate is mounted; an edge ring mounting surface on which an edge ring is mounted around the substrate mounting surface; and a conductive electrode formed on the edge ring mounting surface and configured to apply a voltage to the edge ring.

Description

載置台及基板處理裝置Mounting table and substrate processing device

本發明係關於一種載置台及基板處理裝置。The invention relates to a mounting table and a substrate processing device.

例如，專利文獻1揭示了一種電漿處理裝置，其中對焦環以圍繞靜電吸盤上所載置之基板的方式配置。為了調整對焦環上的鞘層的上端位置，而對於對焦環施加直流電壓。 [習知技術文獻] [專利文獻]For example, Patent Document 1 discloses a plasma processing device in which a focus ring is arranged so as to surround a substrate placed on an electrostatic chuck. In order to adjust the position of the upper end of the sheath on the focus ring, a DC voltage is applied to the focus ring. [Literature Technical Literature] [Patent Literature]

專利文獻1：日本特開2007-258417號公報Patent Document 1: Japanese Patent Application Publication No. 2007-258417

[發明所欲解決之課題][The problem to be solved by the invention]

本發明要求提供一種對於邊緣環穩定施加電壓之技術。 [解決課題之技術手段]The present invention requires a technique for stably applying voltage to the edge ring. [Technical means to solve the problem]

根據本發明的一態樣，提供一種載置台，具備：基板載置面，載置基板；邊緣環載置面，在該基板載置面的周圍載置邊緣環；及導電性的電極，形成於該邊緣環載置面，將電壓供給予該邊緣環。 [發明之功效]According to one aspect of the present invention, there is provided a mounting table including: a substrate mounting surface on which a substrate is mounted; an edge ring mounting surface on which an edge ring is mounted around the substrate mounting surface; and a conductive electrode formed On the edge ring mounting surface, voltage is supplied to the edge ring. [Effects of Invention]

根據本發明，提供一種對於邊緣環穩定施加電壓之技術。According to the present invention, a technique for stably applying voltage to the edge ring is provided.

以下，就本發明的實施形態，參照圖式加以說明。另外，在本說明書及圖式中，就實質上相同的構成賦予相同的符號，並省略重複說明。Hereinafter, embodiments of the present invention will be described with reference to the drawings. In addition, in this specification and the drawings, the same reference numerals are given to substantially the same components, and repeated descriptions are omitted.

＜基板處理裝置的全體構成＞ 首先，參照圖1，就基板處理裝置1的全體構成的一例進行說明。圖1係顯示本實施形態相關之基板處理裝置1的概略構成之剖面圖。另外，本實施形態係就基板處理裝置1為RIE(Reactive Ion Etching，反應性離子蝕刻)型的基板處理裝置之例進行說明。然而，基板處理裝置1亦可為電漿蝕刻裝置或電漿CVD(Chemical Vapor Deposition，化學氣相沉積)裝置等。<The overall structure of the substrate processing equipment> First, referring to FIG. 1, an example of the overall configuration of the substrate processing apparatus 1 will be described. Fig. 1 is a cross-sectional view showing a schematic configuration of a substrate processing apparatus 1 according to this embodiment. In addition, in the present embodiment, an example in which the substrate processing apparatus 1 is a RIE (Reactive Ion Etching) type substrate processing apparatus will be described. However, the substrate processing apparatus 1 may also be a plasma etching apparatus or a plasma CVD (Chemical Vapor Deposition, chemical vapor deposition) apparatus.

在圖1中，基板處理裝置1具有金屬製例如鋁製或是不鏽鋼製的接地之圓筒型的處理容器2；該處理容器2內配設有載置基板W之圓板狀的載置台10。載置台10具備基台11與靜電吸盤25。基台11作為下部電極發揮功用，由例如鋁所構成，並透過絕緣性的筒狀固持構件12，由從處理容器2的底部往垂直上方延伸之筒狀支持部13所支持。In FIG. 1, the substrate processing apparatus 1 has a grounded cylindrical processing vessel 2 made of metal, such as aluminum or stainless steel; the processing vessel 2 is provided with a disc-shaped mounting table 10 on which a substrate W is placed. . The mounting table 10 includes a base 11 and an electrostatic chuck 25. The base 11 functions as a lower electrode, and is made of, for example, aluminum, and is supported by a cylindrical support 13 extending vertically upward from the bottom of the processing container 2 through an insulating cylindrical holding member 12.

處理容器2的側壁與筒狀支持部13之間有排氣通路14形成，於排氣通路14的入口或是途中配設有環狀的擋板15，而且於底部設有排氣口16，該排氣口16經由排氣管17連接於排氣裝置18。在此，排氣裝置18具有乾式泵及真空泵，來將處理容器2內的處理空間減壓至既定的真空度。此外，排氣管17具有可變式蝶形閥即自動壓力控制閥(automatic pressure control valve)(以下，稱作｢APC｣)，該APC自動進行處理容器2內的壓力控制。再者，處理容器2的側壁安裝有使基板W的搬出搬入口19開閉之閘閥20。An exhaust passage 14 is formed between the side wall of the processing container 2 and the cylindrical support portion 13, a ring-shaped baffle 15 is arranged at the entrance or in the middle of the exhaust passage 14, and an exhaust port 16 is provided at the bottom. The exhaust port 16 is connected to an exhaust device 18 via an exhaust pipe 17. Here, the exhaust device 18 has a dry pump and a vacuum pump to depressurize the processing space in the processing container 2 to a predetermined vacuum degree. In addition, the exhaust pipe 17 has an automatic pressure control valve (hereinafter referred to as “APC”) that is a variable butterfly valve, and the APC automatically performs pressure control in the processing container 2. In addition, a gate valve 20 for opening and closing the carry-out and carry-out port 19 of the substrate W is attached to the side wall of the processing container 2.

於基台11，透過第1匹配器22a連接有第1射頻電源21a。此外，於基台11，透過第2匹配器22b連接有第2射頻電源21b。第1射頻電源21a將既定頻率(例如100MHz)的電漿產生用射頻電力供給予基台11。第2射頻電源21b將比第1射頻電源21a更低之既定頻率(例如，13MHz)的離子導入用射頻電力供給予基台11。The base 11 is connected to a first radio frequency power supply 21a through a first matching device 22a. In addition, a second radio frequency power source 21b is connected to the base 11 through a second matcher 22b. The first radio frequency power supply 21a supplies radio frequency power for plasma generation of a predetermined frequency (for example, 100 MHz) to the base station 11. The second radio frequency power supply 21b supplies the base station 11 with radio frequency power for ion introduction at a predetermined frequency (for example, 13 MHz) lower than that of the first radio frequency power supply 21a.

處理容器2的頂棚部，配設有作為上部電極發揮功用之噴頭24。藉此，對基台11與噴頭24之間，施加來自第1射頻電源21a及第2射頻電源21b的2種頻率的射頻電壓。The ceiling portion of the processing container 2 is provided with a shower head 24 that functions as an upper electrode. Thereby, between the base 11 and the shower head 24, radio frequency voltages of two frequencies from the first radio frequency power supply 21a and the second radio frequency power supply 21b are applied.

基台11的頂面設有藉靜電吸附力來吸附基板W之靜電吸盤25。靜電吸盤25具有：載置基板W之圓板狀的中心部25a；與圍繞中心部25a方式形成之環狀的外周部25b。中心部25a相對於外周部25b朝圖中上方凸出。中心部25a的頂面係載置基板W之基板載置面25a1。外周部25b的頂面係載置邊緣環30之邊緣環載置面25b1。邊緣環載置面25b1係於基板載置面25a1的周圍載置邊緣環30。邊緣環30也稱為對焦環。此外，中心部25a係使導電膜所構成之電極板26夾在一對介電膜之間所構成。於電極板26電性連接有直流電源27。外周部25b係使導電膜所構成之電極板29夾在一對介電膜之間所構成。於電極板29，電性連接有直流電源28。The top surface of the base 11 is provided with an electrostatic chuck 25 for attracting the substrate W by electrostatic adsorption force. The electrostatic chuck 25 has a disc-shaped center portion 25a on which the substrate W is placed, and an annular outer peripheral portion 25b formed around the center portion 25a. The center part 25a protrudes upward in the figure with respect to the outer peripheral part 25b. The top surface of the center portion 25a is a substrate mounting surface 25a1 on which the substrate W is mounted. The top surface of the outer peripheral portion 25b is an edge ring placement surface 25b1 on which the edge ring 30 is placed. The edge ring mounting surface 25b1 is for mounting the edge ring 30 around the substrate mounting surface 25a1. The edge ring 30 is also called a focus ring. In addition, the central portion 25a is formed by sandwiching an electrode plate 26 made of a conductive film between a pair of dielectric films. A DC power supply 27 is electrically connected to the electrode plate 26. The outer peripheral portion 25b is formed by sandwiching an electrode plate 29 made of a conductive film between a pair of dielectric films. The electrode plate 29 is electrically connected with a DC power supply 28.

直流電源27及直流電源28所供給之直流電壓的位準及極性係可改變。直流電源27藉由後述之控制部43的控制而對電極板26施加直流電壓。直流電源28藉由控制部43的控制而對電極板29施加直流電壓。靜電吸盤25藉由直流電源27對電極板26施加之電壓而產生庫侖力等靜電力，藉由靜電力讓基板W吸附固持於靜電吸盤25。此外，靜電吸盤25藉由直流電源28對電極板29施加之電壓而產生庫侖力等靜電力，藉由靜電力讓邊緣環30吸附固持於靜電吸盤25。The level and polarity of the DC voltage supplied by the DC power supply 27 and the DC power supply 28 can be changed. The DC power supply 27 applies a DC voltage to the electrode plate 26 under the control of the control unit 43 described later. The DC power supply 28 applies a DC voltage to the electrode plate 29 under the control of the control unit 43. The electrostatic chuck 25 generates electrostatic force such as Coulomb force by the voltage applied by the DC power supply 27 to the electrode plate 26, and the substrate W is adsorbed and held on the electrostatic chuck 25 by the electrostatic force. In addition, the electrostatic chuck 25 generates electrostatic force such as Coulomb force by the voltage applied to the electrode plate 29 by the DC power supply 28, and the edge ring 30 is adsorbed and held on the electrostatic chuck 25 by the electrostatic force.

另外，本實施形態的靜電吸盤25，係基板W用的靜電吸盤與邊緣環30用的靜電吸盤一體化，但亦可使基板W用的靜電吸盤與邊緣環30用的靜電吸盤分別為各別的靜電吸盤。亦即，電極板26與電極板29亦可被各自獨立之介電膜包夾。此外，本實施形態的電極板29係單極的電極，但亦可為雙極的電極。另外，雙極的情況下，在未產生電漿時，也可吸附邊緣環30。In addition, the electrostatic chuck 25 of this embodiment is integrated with the electrostatic chuck for the substrate W and the electrostatic chuck for the edge ring 30, but the electrostatic chuck for the substrate W and the electrostatic chuck for the edge ring 30 may be separate Electrostatic chuck. That is, the electrode plate 26 and the electrode plate 29 can also be sandwiched by separate dielectric films. In addition, the electrode plate 29 of this embodiment is a unipolar electrode, but it may be a bipolar electrode. In addition, in the case of bipolar, the edge ring 30 can also be adsorbed when no plasma is generated.

於靜電吸盤25的邊緣環載置面25b1，形成有對邊緣環30供給電壓之導電性電極即供電部91。圖2係本實施形態相關之基板處理裝置1的靜電吸盤25的俯視圖。供電部91，在邊緣環載置面25b1，於圓周方向以等間隔形成有供電部91a、91b、91c、…等複數供電部91。此外，供電部91係徑向地設置。供電部91設於基板載置面25a1的外側。另外，有時會將個別的供電部91a、91b、91c...統稱為供電部91。另外，供電部91亦可於邊緣環載置面25b1環狀地設置。此外，為了對供電部91供電而設有配線92與配線93。此外，為了保護配線92，於載置台10的側面設有保護層97。供電部91係透過配線92、配線93而連接於電源95。另外，就供電部91、配線92、配線93將詳述於後。On the edge ring mounting surface 25b1 of the electrostatic chuck 25, a power supply part 91 which is a conductive electrode for supplying voltage to the edge ring 30 is formed. FIG. 2 is a plan view of the electrostatic chuck 25 of the substrate processing apparatus 1 according to this embodiment. In the power supply unit 91, a plurality of power supply units 91 such as power supply units 91a, 91b, 91c, ... are formed at equal intervals in the circumferential direction on the edge ring mounting surface 25b1. In addition, the power supply part 91 is provided radially. The power supply unit 91 is provided on the outer side of the board placement surface 25a1. In addition, the individual power supply units 91a, 91b, 91c... may be collectively referred to as the power supply unit 91. In addition, the power supply unit 91 may be provided in a ring shape on the edge ring placement surface 25b1. In addition, a wiring 92 and a wiring 93 are provided in order to supply power to the power supply unit 91. In addition, in order to protect the wiring 92, a protective layer 97 is provided on the side surface of the mounting table 10. The power supply unit 91 is connected to the power source 95 through the wiring 92 and the wiring 93. In addition, the power supply unit 91, wiring 92, and wiring 93 will be described in detail later.

於基台11的內部設有例如於圓周方向延伸之環狀的冷媒室31。由冷卻單元32透過配管33、34循環供給既定溫度的冷媒例如冷卻水予冷媒室31，並藉由該冷媒的溫度來控制靜電吸盤25上的基板W的處理溫度。另外，冷媒係循環供給予配管33、34之溫度調整用媒體。溫度調整用媒體，不僅使基台11及基板W冷卻，有時也可加熱。The base 11 is provided with an annular refrigerant chamber 31 extending in the circumferential direction, for example. The cooling unit 32 circulates and supplies a predetermined temperature of refrigerant, such as cooling water, to the refrigerant chamber 31 through the pipes 33 and 34, and the temperature of the refrigerant controls the processing temperature of the substrate W on the electrostatic chuck 25. In addition, the refrigerant is circulated and supplied to the temperature adjustment medium of the pipes 33 and 34. The temperature adjustment medium may not only cool the base 11 and the substrate W, but may also heat it in some cases.

此外，於靜電吸盤25，透過氣體供給管線36連接有傳熱氣體供給部35。傳熱氣體供給部35利用氣體供給管線36，對靜電吸盤25的中心部25a與基板W所包挾之空間供給傳熱氣體。作為傳熱氣體，宜使用具熱傳導性之氣體，例如He氣體等。In addition, a heat transfer gas supply unit 35 is connected to the electrostatic chuck 25 through a gas supply line 36. The heat transfer gas supply unit 35 uses the gas supply line 36 to supply the heat transfer gas to the space between the center portion 25 a of the electrostatic chuck 25 and the substrate W. As the heat transfer gas, it is advisable to use a gas with thermal conductivity, such as He gas.

頂棚部的噴頭24包含：具多數氣體通氣孔37a之底面的電極板37；與以可裝卸方式支持該電極板37之電極支持體38。電極支持體38的內部設有緩衝室39，於連通緩衝室39之氣體導入口38a，透過氣體供給配管41連接有處理氣體供給部40。The shower head 24 of the ceiling includes: an electrode plate 37 with a bottom surface of a plurality of gas vent holes 37a; and an electrode support 38 that supports the electrode plate 37 in a removable manner. A buffer chamber 39 is provided inside the electrode support 38, and a processing gas supply unit 40 is connected to a gas inlet 38 a communicating with the buffer chamber 39, and a permeated gas supply pipe 41.

基板處理裝置1的各構成元件係和控制部43相連接。例如，排氣裝置18、第1射頻電源21a、第2射頻電源21b、直流電源27、直流電源28、電源95、冷卻單元32、傳熱氣體供給部35及處理氣體供給部40，係和控制部43相連接。控制部43控制基板處理裝置1的各構成元件。Each component system of the substrate processing apparatus 1 is connected to the control unit 43. For example, the exhaust device 18, the first radio frequency power supply 21a, the second radio frequency power supply 21b, the direct current power supply 27, the direct current power supply 28, the power supply 95, the cooling unit 32, the heat transfer gas supply unit 35 and the processing gas supply unit 40, are integrated and controlled Section 43 is connected. The control unit 43 controls each component of the substrate processing apparatus 1.

控制部43具備未圖示之中央處理裝置(CPU)及稱為記憶體之記錄裝置，並將記錄裝置所記錄之程式及處理配方加以讀取並執行，進而在基板處理裝置1執行所需的處理。例如，控制部43進行用以讓邊緣環30靜電吸附的靜電吸附處理。The control unit 43 is equipped with a central processing unit (CPU) and a recording device called a memory, which is not shown, and reads and executes the programs and processing recipes recorded by the recording device, and then executes the required processing in the substrate processing device 1 deal with. For example, the control unit 43 performs an electrostatic adsorption process to make the edge ring 30 electrostatically adsorb.

在基板處理裝置1，於乾蝕刻處理之際，首先使閘閥20為開啟狀態，將加工對象的基板W搬入處理容器2內，載置於靜電吸盤25之上。在基板處理裝置1，由處理氣體供給部40將處理氣體(例如C4 F8 氣體、O2 氣體及Ar氣體所組成之混合氣體)以既定的流量及流量比導入處理容器2內，並藉由排氣裝置18等令處理容器2內的壓力為既定值。In the substrate processing apparatus 1, during the dry etching process, first, the gate valve 20 is opened, and the substrate W to be processed is carried into the processing container 2 and placed on the electrostatic chuck 25. In the substrate processing apparatus 1, the processing gas (for example , a mixed gas composed of C 4 F 8 gas, O 2 gas, and Ar gas) is introduced into the processing vessel 2 by the processing gas supply unit 40 at a predetermined flow rate and flow rate ratio, and The pressure in the processing container 2 is set to a predetermined value by the exhaust device 18 or the like.

在基板處理裝置1，自第1射頻電源21a及第2射頻電源21b分別將頻率相異之射頻電力供給予基台11。此外，在基板處理裝置1，由直流電源27對靜電吸盤25的電極板26施加直流電壓，使基板W吸附於靜電吸盤25。此外，在基板處理裝置1，由直流電源28對靜電吸盤25的電極板29施加直流電壓，使邊緣環30吸附於靜電吸盤25。從噴頭24噴吐出之處理氣體被電漿化，藉由電漿中的自由基或離子對基板W施以蝕刻處理。In the substrate processing apparatus 1, the first radio frequency power source 21 a and the second radio frequency power source 21 b respectively supply radio frequency power with different frequencies to the base 11. In addition, in the substrate processing apparatus 1, the DC power supply 27 applies a DC voltage to the electrode plate 26 of the electrostatic chuck 25 so that the substrate W is attracted to the electrostatic chuck 25. In addition, in the substrate processing apparatus 1, the DC power supply 28 applies a DC voltage to the electrode plate 29 of the electrostatic chuck 25 so that the edge ring 30 is attracted to the electrostatic chuck 25. The processing gas ejected from the shower head 24 is plasma-formed, and the substrate W is etched by radicals or ions in the plasma.

＜對供電部91的供電構造＞ 就本實施形態的基板處理裝置1，說明對於形成在邊緣環載置面25b1的供電部91進行供電之構造。<Power supply structure to power supply unit 91> Regarding the substrate processing apparatus 1 of this embodiment, a structure for supplying power to the power supply portion 91 formed on the edge ring mounting surface 25b1 will be described.

圖3係對於本實施形態相關之基板處理裝置的邊緣環進行供電的說明圖。具體而言，係邊緣環30附近的擴大剖面圖。Fig. 3 is an explanatory diagram of power supply to the edge ring of the substrate processing apparatus according to this embodiment. Specifically, it is an enlarged cross-sectional view of the vicinity of the edge ring 30.

於靜電吸盤25的外周部25b的邊緣環載置面25b1，形成有導電性的電極即供電部91。供電部91只要是金屬或是合金等導電體即可，由例如金、鋁、鎢、鎳、鍺、銻、碲、鉭、鈦、釕、鉑、鉬、錫、銦或是含有其中任一者之合金所形成。供電部91由例如物理蒸鍍法(PVD(Physical Vapor Deposition))、化學蒸鍍法(CVD(Chemical Vapor Deposition))等氣相沉積法，或是電鍍、塗布、溶膠凝膠或旋轉塗佈等液相沉積法，還有熱噴塗或印刷等所形成。就供電部91的厚度而言，只要可受靜電吸盤25吸引，無論何種厚度皆可。然而，為了使邊緣環30冷卻，從邊緣環載置面25b1供給傳熱氣體(例如，He氣體)的情況下，電極的突出高度(電極的厚度)宜為5μm以下。另外，亦可將邊緣環載置面25b1的一部分往下挖，於底部產生電極，使供電部91的電極面與邊緣環載置面25b1的面之高度配合。在此情況下，宜於裝設電極後進行高度對齊之加工。供電部91形成於邊緣環載置面25b1，係將電壓供給予邊緣環3之導電性的電極的一例。On the edge ring placement surface 25b1 of the outer peripheral portion 25b of the electrostatic chuck 25, a power supply portion 91 that is a conductive electrode is formed. The power supply unit 91 only needs to be a conductive body such as metal or alloy, and is made of, for example, gold, aluminum, tungsten, nickel, germanium, antimony, tellurium, tantalum, titanium, ruthenium, platinum, molybdenum, tin, indium, or any of them. Formed by the alloy of those. The power supply unit 91 is made of, for example, physical vapor deposition (PVD (Physical Vapor Deposition)), chemical vapor deposition (CVD (Chemical Vapor Deposition)) or other vapor deposition methods, or electroplating, coating, sol-gel, or spin coating, etc. Liquid deposition method, thermal spraying or printing, etc. are also formed. Regarding the thickness of the power supply part 91, any thickness is acceptable as long as it can be attracted by the electrostatic chuck 25. However, in order to cool the edge ring 30, when a heat transfer gas (for example, He gas) is supplied from the edge ring mounting surface 25b1, the protrusion height of the electrode (the thickness of the electrode) is preferably 5 μm or less. In addition, a part of the edge ring mounting surface 25b1 may be dug down to generate an electrode at the bottom so that the electrode surface of the power supply portion 91 and the edge ring mounting surface 25b1 have a height that matches the height of the surface. In this case, it is advisable to perform high-alignment processing after the electrode is installed. The power supply part 91 is formed on the edge ring mounting surface 25b1 and is an example of a conductive electrode that supplies voltage to the edge ring 3.

本實施形態的供電部91，如圖2所示，於邊緣環載置面25b1的圓周方向以等間隔設置。這是為了以靜電吸盤25對邊緣環30施加邊緣環控制用的直流電壓或射頻功率。然而，邊緣環30未受靜電吸盤25吸附的情況下，亦可於邊緣環載置面25b1的全面形成供電部91。The power supply unit 91 of this embodiment is provided at equal intervals in the circumferential direction of the edge ring mounting surface 25b1, as shown in FIG. This is to apply the DC voltage or radio frequency power for edge ring control to the edge ring 30 by the electrostatic chuck 25. However, when the edge ring 30 is not sucked by the electrostatic chuck 25, the power supply part 91 may be formed on the entire surface of the edge ring mounting surface 25b1.

靜電吸盤25及基台11的側面，隔著用於靜電吸盤25之介電膜(例如，陶瓷)設有配線92。該介電膜係藉由以陶瓷進行熱噴塗所形成。配線92只要是金屬或是合金等導電體即可，由例如金、鋁、鎢、鎳、鍺、銻、碲、鉭、鈦、釕、鉑、鉬、錫、銦或是含有其中任一者之合金等所形成。配線92由例如物理蒸鍍法(PVD)、化學蒸鍍法(CVD)等氣相沉積法，或是電鍍、塗布、溶膠凝膠或旋轉塗佈等液相沉積法，還有熱噴塗或印刷等所形成。配線92將供電部91與基台11底面的配線93之間連接在一起。配線92係連接供電部91之第1配線的一例。此外，配線92亦可使用與基台11或電極板29絕緣的貫通構造。The electrostatic chuck 25 and the side surface of the base 11 are provided with wiring 92 via a dielectric film (for example, ceramic) for the electrostatic chuck 25. The dielectric film is formed by thermal spraying with ceramics. The wiring 92 only needs to be a conductor such as metal or alloy, and is made of, for example, gold, aluminum, tungsten, nickel, germanium, antimony, tellurium, tantalum, titanium, ruthenium, platinum, molybdenum, tin, indium, or any of them. The alloy is formed. Wiring 92 is made of vapor deposition methods such as physical vapor deposition (PVD) and chemical vapor deposition (CVD), liquid deposition methods such as electroplating, coating, sol-gel, or spin coating, as well as thermal spraying or printing. And so on. The wiring 92 connects the power supply unit 91 and the wiring 93 on the bottom surface of the base 11 together. The wiring 92 is an example of the first wiring connecting the power supply unit 91. In addition, the wiring 92 may use a through structure insulated from the base 11 or the electrode plate 29.

於基台11的底面(背面)，透過介電膜(例如，陶瓷)設有配線93。配線93只要是金屬或是合金等導電體即可，例如金、鋁、鎢、鎳、鍺、銻、碲、鉭、鈦、釕、鉑、鉬、錫、銦或是含有其中任一者之合金等所形成。另外，基台11的底面(背面)在大氣環境中的情況下，配線93亦可為銅或是銅合金。配線93由例如物理蒸鍍法(PVD)、化學蒸鍍法(CVD)等氣相沉積法，或是電鍍、塗布、溶膠凝膠或旋轉塗佈等液相沉積法，還有熱噴塗或印刷等所形成。配線93和電源95相連接。電源95對供電部91供給直流電壓或射頻信號脈衝。直流電壓亦可以脈衝狀施加。射頻信號亦可連續供給。此外，亦可供給任意波形的電力。射頻信號脈衝可為自第1射頻電源21a輸出之射頻電力，亦可為自第2射頻電源21b輸出之射頻電力，也可為雙方的射頻電力。On the bottom surface (rear surface) of the base 11, wiring 93 is provided through a dielectric film (for example, ceramic). The wiring 93 only needs to be a conductor such as metal or alloy, such as gold, aluminum, tungsten, nickel, germanium, antimony, tellurium, tantalum, titanium, ruthenium, platinum, molybdenum, tin, indium, or any of them. Formed by alloys and so on. In addition, when the bottom surface (rear surface) of the base 11 is in an atmospheric environment, the wiring 93 may be copper or a copper alloy. Wiring 93 is made of vapor deposition methods such as physical vapor deposition (PVD) and chemical vapor deposition (CVD), liquid deposition methods such as electroplating, coating, sol-gel, or spin coating, as well as thermal spraying or printing. And so on. The wiring 93 and the power supply 95 are connected. The power supply 95 supplies DC voltage or radio frequency signal pulses to the power supply unit 91. DC voltage can also be applied in pulses. The radio frequency signal can also be supplied continuously. In addition, arbitrary waveform power can also be supplied. The radio frequency signal pulse may be the radio frequency power output from the first radio frequency power supply 21a, the radio frequency power output from the second radio frequency power supply 21b, or the radio frequency power of both parties.

當邊緣環30消耗時，鞘層的位置會起變化。電源95對邊緣環30供電，以調整該變化之鞘層的位置。配線93係與第1配線的一例即配線92連接之第2配線的一例。配線92與配線93，為了確保電漿均勻性，宜由圓柱與圈餅狀的圓盤，或由等分配配置之導線等所構成。另外，對配線93的供電，並不限於來自電源95的供電。例如，對基台11或電極板26、29供電之電流亦可由可變阻抗元件加以調整，而供電予配線93。When the edge ring 30 is consumed, the position of the sheath changes. The power supply 95 supplies power to the edge ring 30 to adjust the position of the changing sheath. The wiring 93 is an example of the second wiring connected to the wiring 92 which is an example of the first wiring. In order to ensure the uniformity of the plasma, the wiring 92 and the wiring 93 should preferably be composed of cylindrical and doughnut-shaped discs, or wires that are equally distributed. In addition, the power supply to the wiring 93 is not limited to the power supply from the power supply 95. For example, the current supplied to the base 11 or the electrode plates 26 and 29 can also be adjusted by the variable impedance element and supplied to the wiring 93.

為了保護配線92，在載置台10的側面設有保護層97。保護層97由例如陶瓷所形成。陶瓷的情況下，係由以陶瓷進行熱噴塗所形成。In order to protect the wiring 92, a protective layer 97 is provided on the side surface of the mounting table 10. The protective layer 97 is formed of, for example, ceramic. In the case of ceramics, it is formed by thermal spraying with ceramics.

＜作用‧效果＞ 本實施形態的載置台10，於載置邊緣環30之邊緣環載置面25b1設置供電部91。藉此，可對邊緣環30穩定施加電壓。再者，藉由載置台10的靜電吸盤25來吸附邊緣環30，藉此可將邊緣環30固持在邊緣環載置面25b1。如此，將邊緣環30固持在邊緣環載置面25b1，以邊緣環30將供電部91壓制在邊緣環載置面25b1上，藉此可更穩定確保與邊緣環30的接觸狀態，而且可以高重複性地施加電壓。＜Action‧Effect＞ In the mounting table 10 of this embodiment, a power supply unit 91 is provided on the edge ring mounting surface 25b1 on which the edge ring 30 is mounted. Thereby, the voltage can be stably applied to the edge ring 30. Furthermore, the edge ring 30 is sucked by the electrostatic chuck 25 of the mounting table 10, so that the edge ring 30 can be held on the edge ring mounting surface 25b1. In this way, the edge ring 30 is held on the edge ring mounting surface 25b1, and the power supply portion 91 is pressed on the edge ring mounting surface 25b1 with the edge ring 30, thereby ensuring a more stable contact state with the edge ring 30, and the height can be increased. Apply voltage repeatedly.

作為參考例，例如，可考慮以按壓構件等按壓邊緣環30的側面之同時進行供電的情況。為了對邊緣環30穩定供電，必須以按壓構件對邊緣環30以既定之上的載重進行按壓。藉由邊緣環30以按壓構件等強載重進行按壓時，有時會讓邊緣環30的位置偏移，或讓邊緣環30變形。相對於此，在本實施形態的載置台10，將邊緣環30載置於邊緣環載置面25b1，藉此可進行供電。藉由載置邊緣環30之際的吸引力，可獲得供電部91與邊緣環30的充分接觸。藉此，可對邊緣環30穩定供電。此外，將邊緣環30載置於邊緣環載置面25b1來供電，藉此可防止上述的邊緣環30的變形或偏移。此外，邊緣環30會耗損，所以必須更換，但只要將邊緣環30的靜電吸附關閉，便可簡單取下邊緣環30。如上述，由於可簡單取下邊緣環30，所以可簡便快速完成更換作業、自動更換。As a reference example, for example, a case where power is supplied while pressing the side surface of the edge ring 30 with a pressing member or the like can be considered. In order to supply power to the edge ring 30 stably, it is necessary to press the edge ring 30 with a predetermined load with a pressing member. When the edge ring 30 is pressed with a strong load such as a pressing member, the position of the edge ring 30 may be shifted or the edge ring 30 may be deformed. On the other hand, in the mounting table 10 of this embodiment, the edge ring 30 is mounted on the edge ring mounting surface 25b1, and power can be supplied by this. Due to the attractive force when the edge ring 30 is placed, sufficient contact between the power supply unit 91 and the edge ring 30 can be obtained. In this way, the edge ring 30 can be stably supplied with power. In addition, by placing the edge ring 30 on the edge ring mounting surface 25b1 to supply power, the aforementioned deformation or displacement of the edge ring 30 can be prevented. In addition, the edge ring 30 is worn out, so it must be replaced. However, the edge ring 30 can be easily removed as long as the electrostatic adsorption of the edge ring 30 is turned off. As described above, since the edge ring 30 can be easily removed, the replacement operation can be completed easily and quickly, and the replacement can be automatically performed.

再者，本實施形態的載置台10，於載置台10的底面設有配線93。例如，亦可於筒狀固持構件12的頂面設有與電源95相連接之彈性構件，使該彈性構件與載置台10的底面所具備之配線93接觸來供電。如此，將載置台10載置於筒狀固持構件12，藉此便可對供電部91供電。如此，可使基板處理裝置1製造、設置時的作業簡化。Furthermore, in the mounting table 10 of this embodiment, the wiring 93 is provided on the bottom surface of the mounting table 10. For example, an elastic member connected to the power supply 95 may be provided on the top surface of the cylindrical holding member 12, and the elastic member may be brought into contact with the wiring 93 provided on the bottom surface of the mounting table 10 to supply power. In this way, the mounting table 10 is placed on the cylindrical holding member 12, whereby power can be supplied to the power supply unit 91. In this way, the operations at the time of manufacturing and installation of the substrate processing apparatus 1 can be simplified.

＜變形例1＞ 以下，就對於供電部91的供電方法的變形例進行說明。另外，在以下的變形例，就與筒狀固持構件12所設之端子100的連接進行說明。另外，於端子100連接有電源95，而得到電源供給。<Modification 1> Hereinafter, a modification of the power supply method of the power supply unit 91 will be described. In addition, in the following modification examples, the connection with the terminal 100 provided in the cylindrical holding member 12 will be described. In addition, a power supply 95 is connected to the terminal 100 to obtain power supply.

圖4係對於本實施形態相關之基板處理裝置1的邊緣環30進行供電之第1變形例的說明圖。在第1變形例，端子100與配線92a之間係以彈性接觸件101相連接。配線92a設於靜電吸盤25的側面。彈性接觸件101按壓配線92a的側面，並且對配線92a供電。如此，可對邊緣環30穩定供電。另外，彈性接觸件101係按壓第1配線的側面並且供電之彈性構件的一例。FIG. 4 is an explanatory diagram of a first modification of power supply to the edge ring 30 of the substrate processing apparatus 1 according to this embodiment. In the first modification, the terminal 100 and the wiring 92a are connected by an elastic contact 101. The wiring 92 a is provided on the side surface of the electrostatic chuck 25. The elastic contact 101 presses the side surface of the wiring 92a, and supplies power to the wiring 92a. In this way, the edge ring 30 can be stably supplied with power. In addition, the elastic contact 101 is an example of an elastic member that presses the side surface of the first wiring and supplies power.

＜變形例2＞ 圖5係對於本實施形態相關之基板處理裝置1的邊緣環30進行供電之第2變形例的說明圖。在第2變形例，端子100與配線92b之間係以多重接點102相連接。配線92b設於靜電吸盤25與基台11的側面。多重接點102按壓配線92b的側面，並且對配線92b供電。如此，可對邊緣環30穩定供電。另外，多重接點102係按壓第1配線的側面並且供電之彈性構件的一例。<Modification 2> FIG. 5 is an explanatory diagram of a second modification of the power supply to the edge ring 30 of the substrate processing apparatus 1 according to the present embodiment. In the second modification, the terminal 100 and the wiring 92b are connected by a multiple contact 102. The wiring 92b is provided on the side surfaces of the electrostatic chuck 25 and the base 11. The multiple contact 102 presses the side surface of the wiring 92b, and supplies power to the wiring 92b. In this way, the edge ring 30 can be stably supplied with power. In addition, the multi-contact point 102 is an example of an elastic member that presses the side surface of the first wiring and supplies power.

＜變形例3＞ 圖6係對於本實施形態相關之基板處理裝置1的邊緣環30進行供電之第3變形例的說明圖。在第3變形例，配線92c設有端子103，端子103與端子100之間係以供電銷110相連接。配線92c設於靜電吸盤25的側面。如此，可對邊緣環30穩定供電。<Modification 3> FIG. 6 is an explanatory diagram of a third modification of the power supply to the edge ring 30 of the substrate processing apparatus 1 according to the present embodiment. In the third modification, the wiring 92c is provided with a terminal 103, and the terminal 103 and the terminal 100 are connected by a power supply pin 110. The wiring 92c is provided on the side surface of the electrostatic chuck 25. In this way, the edge ring 30 can be stably supplied with power.

＜變形例4＞ 圖7係對於本實施形態相關之基板處理裝置1的邊緣環30進行供電之第4變形例的說明圖。在第4變形例，配線92d與端子100之間係以供電銷110相連接。配線92d設於靜電吸盤25的側面。如此，可對邊緣環30穩定供電。<Modification 4> FIG. 7 is an explanatory diagram of a fourth modification of the power supply to the edge ring 30 of the substrate processing apparatus 1 according to the present embodiment. In the fourth modification, the wiring 92d and the terminal 100 are connected by the power supply pin 110. The wiring 92d is provided on the side surface of the electrostatic chuck 25. In this way, the edge ring 30 can be stably supplied with power.

＜變形例5＞ 圖8係對於本實施形態相關之基板處理裝置1的邊緣環30進行供電之第5變形例的說明圖。在第5變形例，於配線92e，有凹部104形成，凹部104與端子100之間係以供電銷110相連接。配線92e設於靜電吸盤25及基台11的側面。如此，可對邊緣環30穩定供電。<Modification 5> FIG. 8 is an explanatory diagram of a fifth modification of the power supply to the edge ring 30 of the substrate processing apparatus 1 according to this embodiment. In the fifth modification, a recess 104 is formed in the wiring 92e, and the recess 104 and the terminal 100 are connected by a power supply pin 110. The wiring 92e is provided on the side surface of the electrostatic chuck 25 and the base 11. In this way, the edge ring 30 can be stably supplied with power.

＜變形例6＞ 圖9係對於本實施形態相關之基板處理裝置1的邊緣環30進行供電之第6變形例的說明圖。在第6變形例，配線92f與端子100之間係以導線105相連接。配線92f設於靜電吸盤25的側面。配線92f與導線105係以點焊相連接。如此，可對邊緣環30穩定供電。<Modification 6> FIG. 9 is an explanatory diagram of a sixth modification of the power supply to the edge ring 30 of the substrate processing apparatus 1 according to the present embodiment. In the sixth modification, the wiring 92f and the terminal 100 are connected by a wire 105. The wiring 92f is provided on the side surface of the electrostatic chuck 25. The wiring 92f and the lead 105 are connected by spot welding. In this way, the edge ring 30 can be stably supplied with power.

＜變形例7＞ 圖10係對於本實施形態相關之基板處理裝置1的邊緣環30進行供電之第7變形例的說明圖。在第7變形例，配線92g與端子100之間係以導線106相連接。配線92g設於靜電吸盤25的側面。導線106係自配線92g之上，以絕緣螺絲107安裝於基台11所連接。如此，可對邊緣環30穩定供電。<Modification 7> FIG. 10 is an explanatory diagram of a seventh modification of the power supply to the edge ring 30 of the substrate processing apparatus 1 according to the present embodiment. In the seventh modification, the wiring 92g and the terminal 100 are connected by a wire 106. The wiring 92g is provided on the side surface of the electrostatic chuck 25. The lead 106 is attached to the base 11 by insulating screws 107 from the wiring 92g. In this way, the edge ring 30 can be stably supplied with power.

＜其他的變形例＞ 本次所揭示之本實施形態相關載置台、基板處理裝置及邊緣環，應視為於所有面向中僅為例示，並非加以限制。上述的實施形態，可不脫離所附的申請專利範圍及其主旨，以各種形態變形及改良。上述複數的實施形態所記載之事項，在不相矛盾之範圍內也可採用其他構成，或是可在不相矛盾之範圍內加以組合。＜Other modifications＞ The mounting table, the substrate processing device, and the edge ring related to the present embodiment disclosed this time should be regarded as an illustration in all aspects, and not a limitation. The above-mentioned embodiment can be modified and improved in various forms without departing from the scope and spirit of the attached patent application. The matters described in the plural embodiments described above may adopt other configurations within the scope of non-contradiction, or can be combined within the scope of non-contradiction.

本發明的基板處理裝置，係Capacitively Coupled Plasma(CCP，電容耦合電漿)、Inductively Coupled Plasma(ICP，感應耦合電漿)、利用微波產生電漿之裝置，例如，Radial Line Slot Antenna(RLSA，輻射狀槽孔天線)所產生之電漿、Electron Cyclotron Resonance Plasma(ECR，電子迴旋加速器共振電漿)、還有Helicon Wave Plasma(HWP，螺旋波電漿)等類型皆可適用。The substrate processing device of the present invention is Capacitively Coupled Plasma (CCP), Inductively Coupled Plasma (ICP, inductively coupled plasma), a device that uses microwaves to generate plasma, for example, Radial Line Slot Antenna (RLSA, radiation Plasma generated by a slot antenna), Electron Cyclotron Resonance Plasma (ECR, electron cyclotron resonance plasma), and Helicon Wave Plasma (HWP, spiral wave plasma) are all applicable.

1:基板處理裝置 2:處理容器 10:載置台 11:基台 12:筒狀固持構件 13:筒狀支持部 14:排氣通路 15:擋板 16:排氣口 17:排氣管 18:排氣裝置 19:搬出搬入口 20:閘閥 21a:第1射頻電源 21b:第2射頻電源 22a:第1匹配器 22b:第2匹配器 24:噴頭 25:靜電吸盤 25a:中心部 25a1:基板載置面 25b:外周部 25b1:邊緣環載置面 26:電極板 27:直流電源 28:直流電源 29:電極板 30:邊緣環 31:冷媒室 32:冷卻單元 33:配管 34:配管 35:傳熱氣體供給部 36:氣體供給管線 37:電極板 37a:氣體通氣孔 38:電極支持體 38a:氣體導入口 39:緩衝室 40:處理氣體供給部 41:氣體供給配管 43:控制部 91:供電部 91a:供電部 91b:供電部 91c:供電部 92:配線 92a:配線 92b:配線 92c:配線 92d:配線 92e:配線 92f:配線 92g:配線 93:配線 95:電源 97:保護層 100:端子 101:彈性接觸件 102:多重接點 103:端子 104:凹部 105:導線 106:導線 107:絕緣螺絲 110:供電銷 W:基板1: Substrate processing equipment 2: processing container 10: Mounting table 11: Abutment 12: Cylindrical holding member 13: Cylindrical support 14: Exhaust passage 15: bezel 16: exhaust port 17: Exhaust pipe 18: Exhaust device 19: Move out and move in 20: Gate valve 21a: No. 1 RF power supply 21b: 2nd RF power supply 22a: 1st matcher 22b: 2nd matcher 24: Nozzle 25: Electrostatic chuck 25a: Center 25a1: substrate placement surface 25b: Peripheral 25b1: Edge ring mounting surface 26: Electrode plate 27: DC power supply 28: DC power supply 29: Electrode plate 30: Edge ring 31: Refrigerant room 32: Cooling unit 33: Piping 34: Piping 35: Heat transfer gas supply part 36: Gas supply line 37: Electrode plate 37a: Gas vent 38: Electrode support 38a: Gas inlet 39: buffer room 40: Process gas supply unit 41: Gas supply piping 43: Control Department 91: Power Supply Department 91a: Power Supply Department 91b: Power Supply Department 91c: Power Supply Department 92: Wiring 92a: Wiring 92b: Wiring 92c: Wiring 92d: Wiring 92e: Wiring 92f: Wiring 92g: Wiring 93: Wiring 95: Power 97: protective layer 100: terminal 101: Elastic contact 102: Multiple contacts 103: Terminal 104: recess 105: Wire 106: Wire 107: Insulation screw 110: Power supply pin W: substrate

圖1係顯示本實施形態相關之基板處理裝置的概略構成之剖面圖。 圖2係本實施形態相關之基板處理裝置的靜電吸盤之俯視圖。 圖3係對於本實施形態相關之基板處理裝置的邊緣環進行供電的說明圖。 圖4係對於本實施形態相關之基板處理裝置的邊緣環進行供電之變形例的說明圖。 圖5係對於本實施形態相關之基板處理裝置的邊緣環進行供電之變形例的說明圖。 圖6係對於本實施形態相關之基板處理裝置的邊緣環進行供電之變形例的說明圖。 圖7係對於本實施形態相關之基板處理裝置的邊緣環進行供電之變形例的說明圖。 圖8係對於本實施形態相關之基板處理裝置的邊緣環進行供電之變形例的說明圖。 圖9係對於本實施形態相關之基板處理裝置的邊緣環進行供電之變形例的說明圖。 圖10係對於本實施形態相關之基板處理裝置的邊緣環進行供電之變形例的說明圖。Fig. 1 is a cross-sectional view showing the schematic configuration of a substrate processing apparatus according to this embodiment. Fig. 2 is a plan view of the electrostatic chuck of the substrate processing apparatus according to this embodiment. Fig. 3 is an explanatory diagram of power supply to the edge ring of the substrate processing apparatus according to this embodiment. FIG. 4 is an explanatory diagram of a modified example of supplying power to the edge ring of the substrate processing apparatus according to this embodiment. FIG. 5 is an explanatory diagram of a modified example of supplying power to the edge ring of the substrate processing apparatus according to this embodiment. FIG. 6 is an explanatory diagram of a modified example of supplying power to the edge ring of the substrate processing apparatus according to this embodiment. FIG. 7 is an explanatory diagram of a modified example of supplying power to the edge ring of the substrate processing apparatus according to this embodiment. FIG. 8 is an explanatory diagram of a modified example of supplying power to the edge ring of the substrate processing apparatus according to this embodiment. FIG. 9 is an explanatory diagram of a modified example of supplying power to the edge ring of the substrate processing apparatus according to this embodiment. FIG. 10 is an explanatory diagram of a modified example of supplying power to the edge ring of the substrate processing apparatus according to this embodiment.

11:基台 11: Abutment

12:筒狀固持構件 12: Cylindrical holding member

13:筒狀支持部 13: Cylindrical support

25:靜電吸盤 25: Electrostatic chuck

25b:外周部 25b: Peripheral

25b1:邊緣環載置面 25b1: Edge ring mounting surface

28:直流電源 28: DC power supply

29:電極板 29: Electrode plate

30:邊緣環 30: Edge ring

91:供電部 91: Power Supply Department

92:配線 92: Wiring

93:配線 93: Wiring

95:電源 95: Power

97:保護層 97: protective layer

W:基板 W: substrate

Claims (15)

一種載置台，具備： 基板載置面，載置基板； 邊緣環載置面，在該基板載置面的周圍載置邊緣環；及 導電性的電極，形成於該邊緣環載置面，將電壓供給予該邊緣環。A mounting table with: The substrate placement surface, where the substrate is placed; An edge ring placement surface, where an edge ring is placed around the substrate placement surface; and A conductive electrode is formed on the edge ring placement surface, and voltage is applied to the edge ring. 如請求項1之載置台，更具備： 靜電吸盤，將該邊緣環吸附於該邊緣環載置面。For example, the mounting table of claim 1, which is also equipped with: The electrostatic chuck adsorbs the edge ring on the edge ring placement surface. 如請求項1或2之載置台，其中， 該電極係導電性的膜。Such as the mounting table of claim 1 or 2, in which, The electrode is a conductive film. 如請求項3之載置台，其中， 該導電性的膜係由物理蒸鍍、化學蒸鍍、電鍍、塗布、溶膠凝膠、旋轉塗佈、熱噴塗、印刷中任一者所形成。Such as the mounting table of claim 3, in which, The conductive film is formed by any of physical vapor deposition, chemical vapor deposition, electroplating, coating, sol-gel, spin coating, thermal spraying, and printing. 如請求項1至4中任一項之載置台，其中， 該電極係由金、鋁、鎢、鎳、鍺、銻、碲、鉭、鈦、釕、鉑、鉬、錫、銦或是含有其中任一者之合金所形成。Such as the mounting table of any one of claims 1 to 4, in which: The electrode is formed of gold, aluminum, tungsten, nickel, germanium, antimony, tellurium, tantalum, titanium, ruthenium, platinum, molybdenum, tin, indium, or an alloy containing any of them. 如請求項1至5中任一項之載置台，其中， 該電極於該邊緣環載置面具有複數供電部，並對該複數供電部分別供給直流電壓或是射頻電力。Such as the mounting table of any one of claims 1 to 5, in which: The electrode has a plurality of power supply parts on the edge ring mounting surface, and supplies DC voltage or radio frequency power to the plurality of power supply parts respectively. 如請求項6之載置台，其中， 該直流電壓或是射頻電力係以脈衝狀供給。Such as the mounting table of claim 6, in which, The DC voltage or radio frequency power is supplied in pulses. 如請求項6之載置台，其中， 該複數供電部係以等間隔設置於該邊緣環載置面。Such as the mounting table of claim 6, in which, The plurality of power supply parts are arranged on the edge ring placement surface at equal intervals. 如請求項6或8之載置台，其中， 該複數供電部係徑向地設置於該邊緣環載置面。Such as the mounting table of claim 6 or 8, in which, The plurality of power supply parts are radially arranged on the edge ring placement surface. 如請求項6或8之載置台，其中， 該複數供電部係環狀地設置於該邊緣環載置面。Such as the mounting table of claim 6 or 8, in which, The plurality of power supply parts are annularly arranged on the edge ring placement surface. 8至10中任一項之載置台，其中， 於該載置台的側面具備與該複數供電部連接之第1配線；並透過該第1配線對該複數供電部供電。The mounting table of any one of 8 to 10, in which, A first wiring connected to the plurality of power supply units is provided on the side surface of the mounting table; and the plurality of power supply units are supplied with power through the first wiring. 如請求項11之載置台，其中， 該第1配線具備按壓該第1配線的側面並且供電之彈性構件。Such as the mounting table of claim 11, in which, The first wiring includes an elastic member that presses the side surface of the first wiring and supplies power. 8至10中任一項之載置台，其中， 於該載置台的側面具備與該複數供電部連接之第1配線；於該載置台的背面具備與該第1配線連接之第2配線。The mounting table of any one of 8 to 10, in which, The side surface of the mounting base is provided with a first wiring connected to the plurality of power supply parts; the back surface of the mounting base is provided with a second wiring connected to the first wiring. 如請求項13之載置台，其中， 於該第2配線具備按壓該第2配線的側面並且供電之彈性構件。Such as the mounting table of claim 13, in which, The second wire is provided with an elastic member that presses the side surface of the second wire and supplies power. 一種基板處理裝置，具備載置台； 該載置台具備： 基板載置面，載置基板； 邊緣環載置面，在該基板載置面的周圍載置邊緣環；及 導電性的電極，形成於該邊緣環載置面，將電壓供給予該邊緣環。A substrate processing device is provided with a mounting table; The stage has: The substrate placement surface, where the substrate is placed; An edge ring placement surface, where an edge ring is placed around the substrate placement surface; and A conductive electrode is formed on the edge ring placement surface, and voltage is applied to the edge ring.
TW109139444A 2019-11-26 2020-11-12 Substrate support and substrate processing apparatus TW202139248A (en)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
JP2019-213643 2019-11-26
JP2019213643 2019-11-26
JP2020-121686 2020-07-15
JP2020121686A JP2021090036A (en) 2019-11-26 2020-07-15 Substrate placement table and substrate processing apparatus

Publications (1)

Publication Number Publication Date
TW202139248A true TW202139248A (en) 2021-10-16

Family

ID=76220365

Family Applications (1)

Application Number Title Priority Date Filing Date
TW109139444A TW202139248A (en) 2019-11-26 2020-11-12 Substrate support and substrate processing apparatus

Country Status (4)

Country Link
JP (1) JP2021090036A (en)
KR (1) KR20210065041A (en)
CN (1) CN112951753A (en)
TW (1) TW202139248A (en)

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4884047B2 (en) 2006-03-23 2012-02-22 東京エレクトロン株式会社 Plasma processing method

Also Published As

Publication number Publication date
CN112951753A (en) 2021-06-11
KR20210065041A (en) 2021-06-03
JP2021090036A (en) 2021-06-10

Similar Documents

Publication Publication Date Title
JP6869034B2 (en) Plasma processing equipment
KR101677239B1 (en) Plasma processing apparatus and plasma processing method
TWI533395B (en) Plasma processing device and method of manufacturing semiconductor device
TWI797802B (en) Plasma processing apparatus
US11600471B2 (en) Substrate support, plasma processing apparatus, and focus ring
JP2013149865A (en) Plasma processing device
JP2019176030A (en) Plasma processing apparatus
JP2010157559A (en) Plasma processing apparatus
JP7271330B2 (en) Mounting table and plasma processing device
KR20150035694A (en) Bottom electrode and plasma treatment apparatus
JP2023179599A (en) Mounting table and plasma processing device
JP2019220555A (en) Mounting table and substrate processing apparatus
US11798791B2 (en) Substrate support and plasma processing apparatus
US20210327741A1 (en) Substrate support and substrate processing apparatus
TW202109603A (en) Plasma processing apparatus and plasma processing method
JP6932070B2 (en) Focus ring and semiconductor manufacturing equipment
JP7333712B2 (en) Electrostatic chuck, support table and plasma processing equipment
TW202139248A (en) Substrate support and substrate processing apparatus
US20210280397A1 (en) Plasma processing apparatus, semiconductive member, and semiconductive ring
US20210159057A1 (en) Substrate support and substrate processing apparatus
TW202139252A (en) Stage, substrate processing apparatus, and heat transfer gas supply method
WO2020059596A1 (en) Placement table and substrate treating device
JP2016096342A (en) Plasma processing device
WO2023120245A1 (en) Substrate support and plasma processing apparatus
JP2022078684A (en) Plasma processing apparatus, manufacturing method thereof, and plasma processing method