TW202139246A - Ion implantation system - Google Patents
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- TW202139246A TW202139246A TW110105932A TW110105932A TW202139246A TW 202139246 A TW202139246 A TW 202139246A TW 110105932 A TW110105932 A TW 110105932A TW 110105932 A TW110105932 A TW 110105932A TW 202139246 A TW202139246 A TW 202139246A
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- H01J37/02—Details
- H01J37/04—Arrangements of electrodes and associated parts for generating or controlling the discharge, e.g. electron-optical arrangement, ion-optical arrangement
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- H—ELECTRICITY
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- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
- H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
- H01J37/3171—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation for ion implantation
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- H—ELECTRICITY
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- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/02—Details
- H01J37/04—Arrangements of electrodes and associated parts for generating or controlling the discharge, e.g. electron-optical arrangement, ion-optical arrangement
- H01J37/08—Ion sources; Ion guns
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- H—ELECTRICITY
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- H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
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- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
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- H01J2237/30—Electron or ion beam tubes for processing objects
- H01J2237/304—Controlling tubes
- H01J2237/30472—Controlling the beam
- H01J2237/30477—Beam diameter
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- H—ELECTRICITY
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- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/30—Electron or ion beam tubes for processing objects
- H01J2237/317—Processing objects on a microscale
- H01J2237/31701—Ion implantation
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Abstract
Description
本揭露通常有關離子注入設備,且更具體地說,有關高能量射束線離子注入機。 [相關申請 ]This disclosure generally relates to ion implantation equipment, and more specifically, to high-energy beam line ion implanters. [ Related Application ]
本申請為2020年4月7日申請的名稱為“用於產生聚束式離子束的新穎設備和技術(NOVEL APPARATUS AND TECHNIQUES FOR GENERATING BUNCHED ION)”的美國專利申請第16/842,464號的部分接續申請並主張其優先權,所述申請為2018年8月21日申請的名稱為“用於產生聚束式離子束的新穎設備和技術(NOVEL APPARATUS AND TECHNIQUES FOR GENERATING BUNCHED ION BEAM)”的美國專利申請第16/107,151號的接續並主張其優先權,所述申請以全文引用的方式併入本文中。This application is a partial continuation of the U.S. Patent Application No. 16/842,464 filed on April 7, 2020, entitled "NOVEL APPARATUS AND TECHNIQUES FOR GENERATING BUNCHED ION" Apply and claim its priority. The application is a US patent filed on August 21, 2018, entitled "NOVEL APPARATUS AND TECHNIQUES FOR GENERATING BUNCHED ION BEAM" Application No. 16/107,151 is a continuation and claims its priority, which is incorporated herein by reference in its entirety.
離子注入為經由轟擊將摻雜劑或雜質引入到基板內的製程。離子注入系統可包括離子源和一系列射束線元件。離子源可包括產生離子的腔室。射束線元件可包含例如品質分析器、准直器以及使離子束加速或減速的各種元件。於用於操控射束的一系列光學透鏡非常相似,射束線元件可濾光、聚焦以及操控具有特定物質、形狀、能量和/或其它品質的離子束。離子束穿過射束線組件且可朝向安裝於壓板或夾鉗上的基板引導。Ion implantation is a process of introducing dopants or impurities into a substrate via bombardment. The ion implantation system may include an ion source and a series of beamline elements. The ion source may include a chamber that generates ions. The beamline element may include, for example, a mass analyzer, a collimator, and various elements that accelerate or decelerate the ion beam. Similar to the series of optical lenses used to manipulate the beam, the beamline element can filter, focus, and manipulate ion beams with specific substances, shapes, energy, and/or other qualities. The ion beam passes through the beamline assembly and can be directed toward the substrate mounted on the platen or clamp.
適合於產生中等能量和高能量的離子束的一種類型的離子注入機使用線性加速器或LINAC,其中圍繞波束佈置為導管的一系列電極沿一連串導管使離子束加速到越來越高的能量。各個電極可佈置呈一系列工作臺形式,其中給定工作臺中的給定電極接收AC電壓信號以使離子束加速。One type of ion implanter suitable for generating ion beams of medium and high energy uses a linear accelerator, or LINAC, in which a series of electrodes arranged as conduits around the beam accelerate the ion beam to higher and higher energies along a series of conduits. The various electrodes may be arranged in the form of a series of stages, where a given electrode in a given stage receives an AC voltage signal to accelerate the ion beam.
LINAC採用初始工作臺,所述工作臺在波束經傳導通過射束線時聚束離子束。LINAC的初始工作臺可被稱為聚束器,其中通過聚束器接收連續離子束且以包形式作為聚束式離子束輸出。取決於AC電壓信號的頻率和幅值,使用供電電極傳導通過已知“雙間隙”聚束器的離子束的接收或相位捕獲可以是約30-35%,其意味著在傳導到線性加速器的加速工作臺時,損耗65%的更多的射束電流。LINAC uses an initial stage that focuses the ion beam when the beam is conducted through the beamline. The initial stage of the LINAC can be called a buncher, in which a continuous ion beam is received by the buncher and output as a bunched ion beam in the form of a packet. Depending on the frequency and amplitude of the AC voltage signal, the reception or phase trapping of the ion beam conducted through the known "double-gap" beam condenser using the power supply electrode can be about 30-35%, which means that the ion beam transmitted to the linear accelerator When accelerating the table, 65% more beam current is consumed.
相對於這些和其它考量來提供本揭露Provide this disclosure with respect to these and other considerations
在一個實施例中,一種設備可包含多環漂移管元件,所述多環漂移管元件包含以彼此交替方式佈置的交替順序的接地漂移管集合和AC漂移管集合。多環漂移管組件可更包含:第一接地漂移管,佈置成接收連續離子束;至少兩個AC漂移管,串聯佈置在第一接地漂移管的下游;以及第二接地漂移管,在至少兩個AC漂移管的下游。設備可更包含電耦接到至少兩個AC漂移管的AC電壓元件。AC電壓元件可包含:第一AC電壓源,經耦接以在第一頻率下將第一AC電壓信號遞送到至少兩個AC漂移管中的第一AC漂移管;以及第二AC電壓源,經耦接以在第二頻率下將第二AC電壓信號遞送到至少兩個AC漂移管中的第二AC漂移管。因而,第二頻率可構成第一頻率的整數倍。In one embodiment, a device may include a multi-ring drift tube element that includes an alternating sequence of grounded drift tube sets and AC drift tube sets arranged in an alternating manner with each other. The multi-ring drift tube assembly may further include: a first grounded drift tube arranged to receive a continuous ion beam; at least two AC drift tubes arranged in series downstream of the first grounded drift tube; and a second grounded drift tube arranged at least two Downstream of an AC drift tube. The device may further include an AC voltage element electrically coupled to at least two AC drift tubes. The AC voltage element may include: a first AC voltage source, a first AC drift tube coupled to deliver a first AC voltage signal to at least two AC drift tubes at a first frequency; and a second AC voltage source, It is coupled to deliver a second AC voltage signal to a second AC drift tube of the at least two AC drift tubes at a second frequency. Thus, the second frequency may constitute an integer multiple of the first frequency.
在另一實施例中,離子注入系統可包含:離子源,產生連續離子束;以及聚束器,安置在離子源下游以接收連續離子束並輸出聚束式離子束。聚束器可包含漂移管組件,所述漂移管組件表徵為以彼此交替方式佈置的交替順序的接地漂移管集合和AC漂移管集合。漂移管組件可包含:第一接地漂移管,佈置成接收連續離子束;至少兩個AC漂移管,在第一接地漂移管的下游;第二接地漂移管,在至少兩個AC漂移管的下游;以及AC電壓元件,電耦接到至少兩個AC漂移管。AC電壓元件可包含分別耦接到至少兩個AC漂移管的至少兩個AC電壓源。離子注入系統可更包含安置在聚束器下游的線性加速器,所述線性加速器包括多個加速工作臺。In another embodiment, the ion implantation system may include: an ion source, which generates a continuous ion beam; and a buncher, which is arranged downstream of the ion source to receive the continuous ion beam and output a focused ion beam. The buncher may include a drift tube assembly characterized by an alternating sequence of grounded drift tube sets and AC drift tube sets arranged in an alternating manner with each other. The drift tube assembly may include: a first grounded drift tube arranged to receive a continuous ion beam; at least two AC drift tubes downstream of the first grounded drift tube; and a second grounded drift tube downstream of the at least two AC drift tubes ; And AC voltage components, electrically coupled to at least two AC drift tubes. The AC voltage element may include at least two AC voltage sources respectively coupled to at least two AC drift tubes. The ion implantation system may further include a linear accelerator arranged downstream of the buncher, and the linear accelerator includes a plurality of acceleration stages.
在另一實施例中,一種設備可包含多環漂移管元件和AC電壓元件。多環漂移管組件可包含:第一接地漂移管,佈置成接收連續離子束;以及第一AC漂移管,鄰近第一接地漂移管且在第一接地漂移管的下游安置。多環漂移管組件還可包含:中間接地漂移管,佈置在第一AC漂移管的下游;以及第二AC漂移管,鄰近中間接地漂移管且在中間接地漂移管的下游安置。多環漂移管元件還可包含第二接地漂移管,其中第二接地漂移管鄰近第二AC漂移管且在第二AC漂移管的下游安置。設備可更包含電耦接到多環漂移管元件的AC電壓元件。AC電壓元件可包含:第一AC電壓源,經耦接以在第一頻率下將第一AC電壓信號遞送到第一AC漂移管;以及第二AC電壓源,經耦接以在第二頻率下將第二AC電壓信號遞送到第二AC漂移管,其中第二頻率包括第一頻率的整數倍。In another embodiment, a device may include a multi-ring drift tube element and an AC voltage element. The multi-ring drift tube assembly may include: a first grounded drift tube arranged to receive a continuous ion beam; and a first AC drift tube adjacent to and disposed downstream of the first grounded drift tube. The multi-ring drift tube assembly may further include: an intermediate grounded drift tube arranged downstream of the first AC drift tube; and a second AC drift tube adjacent to the intermediate grounded drift tube and arranged downstream of the intermediate grounded drift tube. The multi-ring drift tube element may further include a second grounded drift tube, wherein the second grounded drift tube is adjacent to and disposed downstream of the second AC drift tube. The device may further include an AC voltage element electrically coupled to the multi-ring drift tube element. The AC voltage element may include: a first AC voltage source coupled to deliver a first AC voltage signal to the first AC drift tube at a first frequency; and a second AC voltage source coupled to operate at a second frequency The second AC voltage signal is delivered to the second AC drift tube, where the second frequency includes an integer multiple of the first frequency.
現將在下文中參考附圖更全面地描述根據本揭露的設備、系統以及方法,在所述隨附圖式中繪示系統和方法的實施例。系統和方法可用許多不同形式實施,且不應解釋為受限於本文中所闡述的實施例。替代地,提供這些實施例是為了使得本揭露將是透徹且完整的,並且這些實施例將向所屬領域的技術人員完整地傳達系統和方法的範圍。The device, system, and method according to the present disclosure will now be described more fully hereinafter with reference to the accompanying drawings, and embodiments of the system and method are shown in the accompanying drawings. The system and method can be implemented in many different forms and should not be construed as being limited to the embodiments set forth herein. Instead, these embodiments are provided so that this disclosure will be thorough and complete, and these embodiments will fully convey the scope of the system and method to those skilled in the art.
如本文中所使用,以單數形式列舉且以字詞“一(a/an)”進行的元件或操作應理解為潛在地還包含複數個元件或操作。此外,對本揭露的“一個實施例”的提及並不意圖解釋為排除也並有所敘述特徵的額外實施例的存在。As used herein, an element or operation recited in the singular form and performed with the word "a/an" should be understood as potentially including plural elements or operations. In addition, the reference to "one embodiment" of the present disclosure is not intended to be interpreted as excluding the existence of additional embodiments that also have narrative features.
本文提供用於基於射束線架構的改進的高能量離子注入系統的方法。為簡潔起見,離子注入系統在本文中還可被稱作“離子注入機”。各種實施例提供用於提供產生高能量離子能力的新穎配置,其中遞送到基板的最終離子能量可以是300千電子伏特、500千電子伏特、1兆電子伏特或更大。在示例性實施例中,新穎聚束器設計可用于以增加離子束接收的方式來處理離子束,如下文所描述。This article provides a method for an improved high-energy ion implantation system based on a beamline architecture. For the sake of brevity, the ion implantation system may also be referred to as an "ion implanter" herein. Various embodiments provide novel configurations for providing the ability to generate high-energy ions, where the final ion energy delivered to the substrate may be 300 kiloelectron volts, 500 kiloelectron volts, 1 megaelectron volt or more. In an exemplary embodiment, the novel buncher design can be used to process ion beams in a manner that increases ion beam reception, as described below.
現參考圖 1A
,以框形式描繪被繪示為注入系統100的示例性離子注入機。離子注入系統100可表示射束線離子注入機,其中為了清楚闡釋而省略一些元件。離子注入系統100可包含保持在所屬領域中已知的高電壓下的離子源102和氣體箱107。離子源102可包含提取組件和濾光器(未示出)以在第一能量下產生離子束106。適用於第一離子能量的離子能量的實例介於5千電子伏特到100千電子伏特的範圍,但實施例不限於此情形。為形成高能量離子束,離子注入系統100包含用於使離子束106加速的各種額外元件。Referring now to FIG. 1A , an exemplary ion implanter shown as an
離子注入系統100可包含用以分析所接收離子束的分析器110。因此,在一些實施例中,分析器110可接收具有由位於離子源102處的提取光學器件施加的能量的離子束106,其中離子能量在100千電子伏特或低於100千電子伏特,且具體來說80千電子伏特或低於80千電子伏特的範圍內。在其它實施例中,分析器110可接收由DC加速器柱加速到如200千電子伏特、250千電子伏特、300千電子伏特、400千電子伏特或500千電子伏特的更高能量的離子束。實施例並不限於此情形。離子注入系統100還可包含聚束器130和安置在聚束器130下游的線性加速器114(以虛線繪示)。下文詳述聚束器130的操作。簡單來說,將聚束器130安置在上游射束線111的下游以接收作為連續離子束(或DC離子束)的離子束106並且輸出作為聚束式離子束的波束。在聚束式離子束中,以離散包形式輸出離子束。同時,可通過聚束器130增加離子束的能量。線性加速器114可包含串聯佈置的多個加速器工作臺126,如所繪示。加速器工作臺126可類似於聚束器操作以在給定工作臺處輸出聚束式離子束,並且在各工作臺中將離子束加速到更高能量。因此,聚束器可被視為第一加速器工作臺,其與下游加速器工作臺的不同之處在于接收作為連續離子束的離子束。The
在各種實施例中,離子注入系統100可包含額外元件,如濾光磁體116、掃描器118以及准直器120,其中濾光磁體116、掃描器118以及准直器120的一般功能為眾所周知的且本文中將不再進一步詳述。因而,在通過線性加速器114加速之後,可將由高能量離子束115表示的高能量離子束遞送到終端站122以處理基板124。In various embodiments, the
在一些實施例中,在將離子束106直接提供到分析器110的情況下,聚束器130可接收相對較低能量(如小於100千電子伏特)的作為連續離子束的離子束106,如所提及。在其它實施例中,在離子注入系統包含DC加速器柱的情況下,離子束106可經加速以作為至多500千電子伏特或大於500千電子伏特的能量下的連續離子束饋入。在這些不同情況下,可根據由聚束器130接收的連續離子束的離子能量來調節由聚束器130施加的確切交流電(alternating current,AC)電壓。In some embodiments, when the
圖 1B
繪示離子注入系統100A的實施例,包含:DC加速器柱108,安置在離子源102下游且佈置成使離子束106加速以產生第二離子能量下的經加速離子束109,其中第二離子能量高於由離子源102產生的第一離子能量。DC加速器柱108可經佈置為在已知DC加速器柱中,如用於中等能量離子注入機的那些柱。DC加速器柱可使離子束106加速,其中由分析器110和聚束器130接收在如200千電子伏特、250千電子伏特、300千電子伏特、400千電子伏特或500千電子伏特的能量下的經加速離子束109。否則,離子注入系統100A可類似於離子注入系統100起作用。 FIG 1B illustrates an
圖 2
繪示根據本揭露的實施例的線性加速器的繪示為聚束器130的示例性聚束器的結構。聚束器130可包含漂移管組件150,所述漂移管元件150包含佈置成接收繪示為經加速離子束109的連續離子束的第一接地漂移管152。如所繪示,第一接地漂移管152連接到電地面。漂移管組件150可更包含佈置在第一接地漂移管152下游的AC漂移管組件。如下文詳細論述,AC漂移管組件156佈置成接收通常在射頻範圍(RF範圍)內的AC電壓信號,所述信號用以加速並操控經加速離子束109。在圖2的實施例中,AC漂移管元件156只包含一個AC漂移管。在其它實施例中,AC漂移管元件156可包含多個AC漂移管。 FIG. 2 illustrates the structure of an exemplary buncher shown as the
漂移管元件150更包含AC漂移管元件156下游的第二接地漂移管154。作為整體,漂移管元件150佈置為中空圓柱以接收連續離子束,傳導離子束穿過中空圓柱,並且以將離子束聚束成離散包(繪示為聚束109A)的方式使離子束的一些部分加速且使其它部分減速,以通過位於下游的加速工作臺158接收並進一步加速。漂移管組件150可由石墨或類似合適的材料構成,其被配置成最小化經傳導穿過其的離子束的污染。由加速工作臺158指示的後續加速工作臺可在良好定義的頻率ω下操作,且將聚束捕獲到此加速結構中可受限於關於此基諧角頻率ω的大致±5°的相角。為將最大可能電流傳輸穿過整個射束線,需要佈置聚束器130以產生用於此基頻ω的每一週期的一個聚束。The
如圖2中所示,聚束器130更包含AC電壓元件140,所述AC電壓元件140佈置成將AC電壓信號發送到AC漂移管元件156以驅動AC漂移管元件156的經供電漂移管處的變化電壓。取決於AC漂移管組件156處的離子的到達時間,AC漂移管元件156上的變化電壓對離子提供不同加速。通過這種方式,聚束109A的後端109A1較聚束109A的前端109A2給出更大速率,且在到達加速工作臺158時,整個聚束109A變得盡可能的緊湊。在各種實施例中,AC電壓信號可以是多個單獨AC電壓信號的複合物,其經疊加以通過提供連續離子束的改進的聚束的方式產生AC電壓信號。在各種實施例中,AC電壓元件140可在第一頻率下產生第一AC電壓信號,且在第二頻率下產生第二AC電壓信號,其中第二頻率包括第一頻率的整數倍。在一些實施例中,AC電壓元件140可在第三頻率下產生第三AC電壓信號,其中第三頻率構成第一頻率的整數倍且與第二頻率不同,等等。因此,第二頻率、第三頻率等可以是第一頻率的諧波,其中所述頻率可以是第一頻率的兩倍、三倍等。As shown in FIG. 2, the
在圖2的實施例中,繪示AC電壓元件140以產生三種不同AC電壓信號,表示為V1
cos(ωt + ϕ1
)、V2
cos(2ωt + ϕ2
)以及V3
cos(3ωt + ϕ3
)。出於說明的目的,AC電壓信號繪示為正弦信號,但其它波形形狀是可能的。AC電壓元件140可包含第一AC電壓供應142、第二AC電壓供應144以及第三AC電壓供應146,以分別產生第一AC電壓信號、第二AC電壓信號以及第三AC電壓信號。可使用由同步信號產生器驅動的RF放大器來實施AC電壓供應。通用術語V
是指AC電壓信號的最大幅值,而通用術語ϕ是指AC電壓信號的相位。因此,不同信號之間的最大幅值和相位可以不同。在此實施例中,第二AC電壓信號和第三AC電壓信號分別表示第一信號ω的頻率的兩部和三倍。如圖2中所示,AC電壓元件140可包含加法器148,其中加法器148對單獨電壓信號求和並且將複合AC電壓信號149輸出到AC漂移管元件156。In the embodiment of FIG. 2, the
在各種實施例中,複合AC電壓信號可由AC電壓信號形成,其中AC電壓信號的最高頻率為大致120兆赫或小於120兆赫。In various embodiments, the composite AC voltage signal may be formed by an AC voltage signal, where the highest frequency of the AC voltage signal is approximately 120 MHz or less.
複合AC電壓信號149被設計成以增加下游加速工作臺處的接收的方式來調節由AC漂移管組件156處理的離子的相位相依性。在離子注入系統的已知線性加速器中,當連續離子束經聚束以包形式傳輸到下游加速工作臺時,由於加速和聚束製程的性質,離子束的某一部分相對於壁或其它表面損耗。接收是指未損耗離子束的百分比(如射束電流的百分比),且因此由下游加速工作臺接收。如所提及,在採用線性加速器的已知離子注入設備中,當各種條件經優化時,接收最大可為約30%到35%。此類已知離子注入系統可通過頻率為10兆赫、13.56兆赫或20兆赫的AC電壓信號以及數十千伏範圍內的電壓幅值驅動聚束器。值得注意的是,已知離子注入系統中的AC電壓信號可經產生為單個頻率的簡單AC電壓信號。The composite
值得注意的是,複合AC電壓信號的基諧元件可簡化為V1 cos( ω t) ,其中關於其它兩個AC電壓信號的相對相位通過相應相位偏移ϕ 2 或ϕ 3 給出。如下詳述,這些偏移可經調節以增加接收。It is worth noting that the fundamental harmonic component of the composite AC voltage signal can be simplified as V 1 cos( ω t) , where the relative phase of the other two AC voltage signals is given by the corresponding phase offset ϕ 2 or ϕ 3. As detailed below, these offsets can be adjusted to increase reception.
具體來說,與採用單個頻率的AC電壓信號的已知聚束器相比,本發明人已發現應用多個頻率產生複合物(複合波形)產生更佳的輸出相位相干性 / 捕獲 。 Specifically, the inventors have found that the application of multiple frequency generating complexes (composite waveforms) produces better output phase coherence / capture compared to known bunchers that use AC voltage signals of a single frequency.
轉向圖 3
,其繪示根據本揭露的其它實施例的線性加速器的示例性聚束器(聚束器160)的結構。聚束器160可包含漂移管組件170,所述漂移管元件170包含佈置成接收繪示為經加速離子束109的連續離子束的第一接地漂移管182。如所繪示,第一接地漂移管182連接到電地面。漂移管組件170可更包含佈置在第一接地漂移管182下游的AC漂移管組件180。如下文詳細論述,類似于AC漂移管組件156,AC漂移管組件180佈置成接收通常在射頻範圍(RF範圍)內的AC電壓信號,所述信號用以加速並操控經加速離子束109。在圖3的實施例中,AC漂移管組件180包含三個AC漂移管,繪示為AC漂移管184、AC漂移管186以及AC漂移管188。Turning to FIG. 3 , it illustrates the structure of an exemplary buncher (buncher 160) of a linear accelerator according to other embodiments of the present disclosure. The
漂移管元件170更包含AC漂移管元件180下游的第二接地漂移管190。作為整體,漂移管元件170佈置為中空圓柱以接收連續離子束,傳導離子束穿過中空圓柱,且以將離子束聚束成離散包(繪示為聚束109A)的方式使離子束加速,以通過位於下游的加速工作臺192接收且進一步加速。因而,漂移管組件170可構成(沿離子束的傳播方向的)長度為至少100毫米且小於400毫米的多環漂移管組件。The
在圖3的實施例中,提供AC電壓元件162,其佈置成將AC電壓信號發送到AC漂移管元件180以驅動AC漂移管元件180的經供電漂移管處的變化電壓。AC電壓元件162可被配置,其中第一AC電壓供應142驅動AC漂移管184,第二AC電壓供應144驅動AC漂移管186,且第三AC電壓供應146驅動AC漂移管188。可通過控制器164使這些AC電壓信號在時間上同步以類似于複合AC電壓信號149而有效地產生複合信號。雖然圖3示出將最低頻率AC電壓信號供應到最遠上游AC漂移管的配置,但在其它實施例中,可將最低頻率AC電壓信號(V1
cos(ωt + ϕ1
))施加到不同AC漂移管。以上適用於中間頻率AC電壓信號(V2
cos(2ωt + ϕ2
))和高頻率AC電壓信號(V3
cos(3ωt + ϕ3
))。此配置較圖2中的配置具有優勢,其中避免干擾其它電源的電源風險。In the embodiment of FIG. 3, an
雖然可能使用多頻率AC電壓信號來驅動聚束器,但值得注意的是,使用多個頻率產生AC電壓信號可必然伴有更大電壓供應,且可導致更長射束線,如下詳述。因此,迄今為止尚未構想射束線離子注入機中的此配置。值得注意的是,本發明人已識別出可通過調節驅動信號以顯著地提高離子束輸送量,尤其對具有在常見摻雜物(如硼、磷以及類似物)的範圍內的品質的離子來克服這些考慮因素的配置。具體來說,在圖2的“單環”(其中“環”是指AC漂移管)聚束器或圖3的“三環”聚束器中,產生複合AC電壓信號,其中通過在距AC漂移管元件的目標距離處使用離子束以改進相位相干性的方式進行離子束的聚束,且因此增加接收。Although it is possible to use a multi-frequency AC voltage signal to drive the buncher, it is worth noting that the use of multiple frequencies to generate an AC voltage signal may inevitably be accompanied by a larger voltage supply and may result in a longer beamline, as detailed below. Therefore, this configuration in a beamline ion implanter has not been conceived so far. It is worth noting that the inventors have identified that the driving signal can be adjusted to significantly increase the ion beam delivery, especially for ions with qualities in the range of common dopants (such as boron, phosphorus, and the like). Overcome the configuration of these considerations. Specifically, in the "single ring" (where "ring" refers to the AC drift tube) buncher of Fig. 2 or the "three ring" buncher of Fig. 3, a composite AC voltage signal is generated, which passes between the AC The ion beam is used at the target distance of the drift tube element to converge the ion beam in a manner that improves the phase coherence, and thus increases the reception.
轉向圖 4
,繪示覆合說明,包含漂移管元件150和對應的相點陣圖(繪示沿射束路徑的以毫米為單位的距離函數)的繪圖。相點陣圖為示出隨距離變化而變化的相位(繪示於右側縱坐標上)的圖表,其中AC漂移管組件156的單獨漂移管的位置在30毫米與75毫米之間延伸。在此位置處,施加到AC漂移管元件156的電壓(由左邊縱坐標所繪示)達到大致18千伏的最大值且在40兆赫的頻率下施加。圖表的右側繪示經加速離子束109的一系列21條不同射線的相對相位位置。經加速離子束109的離子品質假定為20 amu。如所繪示,電壓在AC漂移管元件156的位置處達到最大值,且在別處為零。在到AC漂移管組件156中的進入點處,21條示例性射線以18度的間隔在相位中相等地間隔開。當通過如由AC電壓元件140產生的通過V = V1
cos( ω t + ϕ 1 )+V2
cos(2 ω t + ϕ 2 ) +V3
cos(3 ω t + ϕ 3 )
給出的複合AC電壓信號處理時,各個射線在相位中彙聚到右側,如所繪示。Turning to FIG. 4 , the overlay description is shown, including the
在對應于AC漂移管組件156的入口的右側的700毫米、670毫米的位置處,許多射線之間的相位差接近零。因此,當加速工作臺158的入口安置在700毫米位置(對應於許多射線之間的零相位差)處時,接收可以是最大值。對於基於+/-5度變化的接收,在圖4的實例中,加速器處的接收為大致55%。在各種其它類比中,圖4的配置的最大接收已經計算為高達75%,較採用單一頻率聚束器的已知離子注入機的30%至35%接收顯著提高。舉例來說,當將V設定為等於59.4千伏時,接收為75%,而在24千伏時,接收為65%。At positions corresponding to 700 mm and 670 mm on the right side of the entrance of the AC
值得注意的是,可通過將相同電壓參數應用于AC漂移管元件180的三環配置來獲得圖4中所示的使用AC漂移管元件156的說明的相位彙聚的相同行為。It is worth noting that the same voltage parameters can be applied to the three-ring configuration of the AC
圖 5A 和圖 5B 為示出離子束的不同射線的相位行為的圖表,其突出顯示施加根據本發明實施例的複合AC電壓信號的益處。圖5A繼續圖4的實施例的複合AC電壓參數,而圖5B示出將簡單AC電壓信號施加到離子束的實例。在圖5B的說明中,AC信號通過下式得出:V = Vmax cos( ω t + ϕ ) ,而在圖5A中,AC信號通過下式得出:V = V1 cos( ω t + ϕ 1 )+V2 cos(2 ω t + ϕ 2 ) +V3 cos(3 ω t + ϕ 3 ) 。在兩種情況下,頻率ω 都為40兆赫。 5A and 5B is a graph of the phase behavior of the different rays of the ion beam is shown, highlighting the benefits of applying a composite AC voltage signal according to an embodiment of the present invention. FIG. 5A continues the composite AC voltage parameters of the embodiment of FIG. 4, while FIG. 5B shows an example of applying a simple AC voltage signal to the ion beam. In the description of Fig. 5B, the AC signal is obtained by the following formula: V = V max cos( ω t + ϕ ) , and in Fig. 5A, the AC signal is obtained by the following formula: V = V 1 cos( ω t + ϕ 1 )+V 2 cos(2 ω t + ϕ 2 ) +V 3 cos(3 ω t + ϕ 3 ) . In both cases, the frequency ω is 40 MHz.
在兩個不同圖表中,相位行為描繪隨聚束器的入口處的給定射線的相位而變化的距接近到聚束器的入口的點的指定距離處的給定射線的相位。在離子束的不同射線的相位可方便地彙聚的距離處設定指定距離。因此,再次參看圖4,在聚束109A中,AC漂移管組件156的操作往往會使相位滯後離子(後端109A1)加速,且往往會使相位前沿離子(前端109A2)減速,引起如在700毫米處相位彙聚。In two different graphs, the phase behavior depicts the phase of a given ray at a specified distance close to the point of the entrance of the beam buncher as a function of the phase of the given ray at the entrance of the beam buncher. Set the designated distance at the distance where the phases of the different rays of the ion beam can easily converge. Therefore, referring to Fig. 4 again, in the
在圖5B中,大部分相位相干條件產生35%的最高相對接收,即使初始相位差僅為30度,在400毫米下仍然存在較小程度的相位差。如所繪示,對於其它電壓,所述行為是更糟的。值得注意的是,圖5A的實施例在700毫米下產生彙聚,略微長於需要在400毫米下彙聚的單一頻率聚束器結果。此結果部分是由於需要將AC電壓幅值保持在用於複合AC電壓信號的合理電平下,如大致20千伏。在單一頻率聚束器的情況下,20千伏AC電壓幅值下的操作使得在400毫米下彙聚。雖然與單一頻率聚束器架構相比,圖5A的實施例可必然伴有聚束器與加速器之間的略微更長間距(700毫米對比400毫米),但益處為基本上更大接收,且因此射束電流經傳導到LINAC的主加速器工作臺中。在各種額外實施例中,彙聚長度可能介於300毫米到1000毫米的範圍。In Figure 5B, most phase coherence conditions produce the highest relative reception of 35%. Even if the initial phase difference is only 30 degrees, there is still a small degree of phase difference at 400 mm. As depicted, for other voltages, the behavior is worse. It is worth noting that the embodiment of FIG. 5A produces convergence at 700 mm, which is slightly longer than the single frequency buncher result that requires convergence at 400 mm. This result is partly due to the need to maintain the AC voltage amplitude at a reasonable level for composite AC voltage signals, such as approximately 20 kilovolts. In the case of a single frequency buncher, operation at 20 kV AC voltage amplitude results in convergence at 400 mm. Although the embodiment of FIG. 5A may necessarily be accompanied by a slightly longer distance between the buncher and the accelerator (700 mm vs. 400 mm) compared to a single-frequency buncher architecture, the benefit is substantially greater reception, and Therefore, the beam current is conducted to the main accelerator table of LINAC. In various additional embodiments, the convergence length may be in the range of 300 mm to 1000 mm.
在不限制於特定理論情況下,可通過以下方式來解釋上述結果。應用多個頻率以產生複合或複合AC電壓信號(波形)可產生具有更有益於逐漸增加捕獲的形狀的波形。原則上為具有尖銳特徵(如豎直鋸齒形狀)的波形,如圖10中所示。此波形可以一個“鋸齒”使得離子聚在一起以形成一個聚束的方式使離子加速,理論上實現約100%捕獲。值得注意的是,在實際聚束器中,基於諧振電路的諧振器用於驅動相關頻率(在兆赫茲範圍內)的AC電壓波形,其中諧振電路本身產生正弦波,所述波形並不像豎直鋸齒情況一樣產生高捕獲。在本發明方法中,添加多個不同頻率的正弦波形用於產生可展現與理想鋸齒形狀更接近的形狀的複合波形,且因此增大改進的輸出相位相干性和捕獲,如上文所述。Without being limited to a specific theory, the above results can be explained in the following ways. Applying multiple frequencies to generate a composite or composite AC voltage signal (waveform) can generate a waveform with a shape that is more beneficial to gradually increase the capture. In principle, it is a waveform with sharp features (such as a vertical sawtooth shape), as shown in Figure 10. This waveform can be a "sawtooth" to make the ions gather together to form a bunch to accelerate the ions, theoretically achieving about 100% capture. It is worth noting that in the actual buncher, the resonator based on the resonant circuit is used to drive the AC voltage waveform of the relevant frequency (in the megahertz range), where the resonant circuit itself generates a sine wave, the waveform is not like vertical The sawtooth situation also produces high capture. In the method of the present invention, adding multiple sinusoidal waveforms of different frequencies is used to generate a composite waveform that can exhibit a shape closer to the ideal sawtooth shape, and thus increase the improved output phase coherence and capture, as described above.
應注意,在本發明實施例中,兩種或大於兩種波形可展現在基頻下產生第一波形且在整數倍的基頻下產生另一波形的關係。以此方式,當新元件在整數倍的基頻下時,每一離子聚束將經歷相同場,且基諧最高公因數頻率在基頻下保持不變。It should be noted that, in the embodiment of the present invention, two or more than two waveforms can exhibit a relationship in which a first waveform is generated at a fundamental frequency and another waveform is generated at an integer multiple of the fundamental frequency. In this way, when the new element is at an integer multiple of the fundamental frequency, each ion beam will experience the same field, and the highest common factor frequency of the fundamental harmonic remains unchanged at the fundamental frequency.
雖然原則上添加大量波形(如傅立葉級數(Fourier series))可產生更精確地近似於鋸齒波形的合成的複合波形,但由於添加此大量數目的頻率的增大的成本,此類方法可能不切實際。本發明人已發現添加僅兩個或三個正弦波形的諧波產生輸出相位相干性和捕獲的極顯著增大,如上文所論述。另外,本發明人已發現將不同正弦波形應用於單獨電極可類似於將不同正弦波形應用于單一電極來工作,且發現與通過單個頻率波形產生的相對較低輸出相位相干性相對,與三個波形的情況類似,應用僅兩個波形產生輸出相位相干性和捕獲的明顯改進。Although in principle adding a large number of waveforms (such as Fourier series) can produce a synthesized composite waveform that more accurately approximates the sawtooth waveform, such methods may not be effective due to the increased cost of adding this large number of frequencies. Realistic. The inventors have found that adding harmonics of only two or three sinusoidal waveforms produces a very significant increase in output phase coherence and capture, as discussed above. In addition, the inventors have found that applying different sinusoidal waveforms to individual electrodes can work similarly to applying different sinusoidal waveforms to a single electrode, and found that as opposed to the relatively low output phase coherence produced by a single frequency waveform, compared with three The situation is similar for the waveforms, applying only two waveforms produces a significant improvement in output phase coherence and capture.
儘管LINAC的額外工作臺可以與本發明實施例的聚束器類似方式進行加速且進一步聚束離子包,但LINAC的這些額外工作臺無需通過如所繪示的複合AC電壓信號來驅動。換句話說,由於聚束器的複合AC電壓信號已將聚束式離子束的各種射線的大部分彙聚於到加速器工作臺的入口處,因此可能較不需要進一步提高相位彙聚。這一事實允許更簡單設計的AC電壓元件驅動LINAC的加速器工作臺。Although the additional workbenches of LINAC can accelerate and further beam ion packets in a similar manner to the beam buncher of the embodiment of the present invention, these additional workbenches of LINAC do not need to be driven by the composite AC voltage signal as shown. In other words, since the composite AC voltage signal of the buncher has concentrated most of the various rays of the bunched ion beam at the entrance of the accelerator table, it may be less necessary to further improve the phase convergence. This fact allows a simpler design of AC voltage components to drive the LINAC accelerator table.
作為實例,在三倍頻率複合AC信號的一個實施例中,第一信號的基頻可以是40兆赫,而添加至第一信號的第二信號的第一諧波頻率可以是80兆赫,且添加至第一信號和第二信號的第三信號的第二諧波頻率可以是120兆赫。As an example, in an embodiment of a triple-frequency composite AC signal, the fundamental frequency of the first signal may be 40 MHz, and the first harmonic frequency of the second signal added to the first signal may be 80 MHz, and The second harmonic frequency of the third signal to the first signal and the second signal may be 120 MHz.
值得注意的是,雖然上述實施例強調基於三個AC電壓信號產生複合AC電壓信號且採用包含三個漂移管的多環漂移管元件,但在其它實施例中,複合AC電壓信號可由兩個AC電壓信號或四個AC電壓信號形成。實施例並不限於此情形。同樣地,根據其它實施例的多環漂移管元件可採用兩個漂移管或四個漂移管。實施例並不限於此情形。It is worth noting that although the above embodiment emphasizes the generation of a composite AC voltage signal based on three AC voltage signals and adopts a multi-ring drift tube element including three drift tubes, in other embodiments, the composite AC voltage signal can be composed of two AC voltage signals. The voltage signal or four AC voltage signals are formed. The embodiment is not limited to this case. Similarly, the multi-ring drift tube element according to other embodiments may use two drift tubes or four drift tubes. The embodiment is not limited to this case.
圖 6
描繪根據本揭露的一些實施例的示例性製程流程600。在框602處,如通過從離子源提取來產生作為連續離子束的離子束。因而,離子束可展現在數keV至多大致80千電子伏特範圍內的離子能量。任選地,連續離子束可經加速以產生經加速連續離子束。在一個實例中,可應用DC加速器柱以使連續離子束加速。因而,在一些實施例中,經加速連續離子束可展現200千電子伏特到500千電子伏特或更大的離子能量。 FIG. 6 depicts an
在框604處,在多環漂移管組件中接收連續離子束。多環漂移管元件可包含第一接地漂移管和第二接地漂移管,以及安置在第一接地漂移管與第二接地漂移管之間的多環AC漂移管元件。At
在框606處,使連續離子束傳導穿過多環漂移管元件的第一AC漂移管,同時在第一頻率下將第一AC電壓信號施加到第一AC漂移管。At
在框608處,連續離子束經傳導穿過多環漂移管元件的第二AC漂移管,同時在第二頻率下將第二AC電壓信號施加到第二AC漂移管。在各種實施例中,第二頻率可以是第一頻率的整數倍,如第一頻率的兩倍。在任選的操作中,經加速連續離子束可經傳導穿過多環漂移管元件的第三AC漂移管,同時在第三頻率下將第三AC電壓信號施加到第三AC漂移管。第三頻率可以是第一頻率的整數倍且與第二頻率不同。因而,可從多環漂移管元件輸出經加速連續離子束作為聚束式離子束。At
圖 7
繪示根據本揭露的其它實施例的用於線性加速器的另一示例性聚束器(聚束器200)。聚束器200可包含漂移管組件201,所述漂移管元件201包含佈置成接收繪示為經加速離子束109的連續離子束的第一接地漂移管202。如所繪示,第一接地漂移管202連接到電地面。漂移管組件201可更包含佈置在第一接地漂移管182下游的AC漂移管組件203。類似于前述AC漂移管元件,AC漂移管元件203佈置成接收通常在射頻範圍(RF範圍)內的AC電壓信號,所述信號用以加速/減速並操控經加速離子束109。在圖7的實施例中,AC漂移管組件201包含兩個AC漂移管,繪示為AC漂移管204和AC漂移管208。 FIG. 7 illustrates another exemplary buncher (buncher 200) for a linear accelerator according to other embodiments of the present disclosure. The
漂移管元件201更包含AC漂移管元件203下游的第二接地漂移管210。作為整體,漂移管元件201佈置為中空圓柱以使離子束聚束成離散包(繪示為包109B)的方式來接收連續離子束,傳導離子束穿過中空圓柱以及加速/減速離子束,以通過安置在下游的線性加速器212接收且進一步加速。因而,漂移管組件201可構成(沿離子束的傳播方向的)長度為至少100毫米且小於400毫米的多環漂移管組件。The
在圖7的實施例中,AC電壓元件166經提供且佈置成將AC電壓信號發送到AC漂移管元件203以驅動AC漂移管元件203的經供電漂移管處的變化電壓。AC電壓元件166可被配置,其中第一AC電壓供應214驅動AC漂移管204,而第二AC電壓供應216驅動AC漂移管208。在此配置和圖8的配置中,兩個不同AC電壓供應可輸出40兆赫的第一頻率和80兆赫的第二頻率,或替代地兩個不同AC電壓供應可根據不同非限制性實施例而輸出13.56兆赫的第一頻率和27.12兆赫的第二頻率。In the embodiment of FIG. 7, the
可通過控制器164使這些AC電壓信號在時間上同步以產生與單個漂移管通過由以下給出的複合信號產生的行為類似的波束行為:V = V1
cos( ω t + ϕ 1 )+V2
cos(2 ω t + ϕ 2 )
。以這種方式,隨離子的輸入相位而變化的輸出相位相干性可以類似於圖2到圖5B的實施例(上文所論述)的方式改進以優於單一頻率聚束器。These AC voltage signals can be synchronized in time by the
雖然圖7示出將最低頻率AC電壓信號供應到最遠上游AC漂移管204的配置,但在其它實施例中,可將最低頻率AC電壓信號(V1
cos
(ωt + ϕ1
))施加到不同AC漂移管。Although FIG. 7 shows a configuration in which the lowest frequency AC voltage signal is supplied to the furthest upstream
圖 8
繪示根據本揭露的其它實施例的另一示例性聚束器(聚束器220)。聚束器220可包含漂移管組件221,所述漂移管元件221包含佈置成接收繪示為經加速離子束109的連續離子束的第一接地漂移管202。如所繪示,第一接地漂移管202連接到電地面。漂移管組件221可更包含佈置在第一接地漂移管202下游的AC漂移管204。在圖8的實施例中,將AC漂移管208安置在AC漂移管204的下游,且將第二接地漂移管210安置在AC漂移管208的下游,如在圖7的實施例中。因而,漂移管組件201可構成(沿離子束的傳播方向的)長度L為至少100毫米且小於400毫米的多環漂移管組件。除前述元件以外,漂移管元件221包含安置在AC漂移管204與漂移管208之間的中間接地漂移管206。此配置提供的優勢為減小分別驅動AC漂移管204和AC漂移管208的兩個電源(AC電壓供應214、AC電壓供應216)與兩個諧振電路之間的串擾的風險。 FIG. 8 shows another exemplary buncher (buncher 220) according to other embodiments of the present disclosure. The
圖8的實施例示出漂移管組件221,其隨著離子束向下傳導射束線表徵為交替順序的交替的一個AC漂移管和一個接地漂移管。在交替順序的其它實施例中,除安置在每一連續對的AC漂移管之間的接地漂移管之外,可提供三個或大於三個AC漂移管以產生複合AC信號,通常如關於圖3所描述。以這種方式,可削減所有電源與諧振器之間的串擾。The embodiment of FIG. 8 shows the
應注意,在使用兩個至多200度輸出相位相干性的頻率的實施例中,可獲得至多55%的離子束接收。在各種實施例中,漂移管的導管長度可通過以下考慮因素進行調節:1)長度可根據以180°行進的給定離子束中的離子的距離來調節,或,其中v為速率。這種距離產生對於給定電壓的最大加速,但可能產生一些非所需相位影響。使用低至0.2D0 的更短導管將需要更高電壓,但可產生整體上更佳的結果。關於彙聚長度L,使此參數更短是有益的,但需要施加更高電壓。因此,L可基於離子物質、電壓考慮因素以及其它影響根據不同實施例而介於300毫米到1米的範圍。It should be noted that in an embodiment using two frequencies with output phase coherence at most 200 degrees, at most 55% of ion beam reception can be obtained. In various embodiments, the duct length of the drift tube can be adjusted by the following considerations: 1) The length can be adjusted according to the distance of the ions in a given ion beam traveling at 180°, or , Where v is the speed. This distance produces the maximum acceleration for a given voltage, but may produce some undesired phase effects. Using shorter conduits as low as 0.2D 0 will require higher voltages, but can produce better results overall. Regarding the convergence length L, it is beneficial to make this parameter shorter, but a higher voltage needs to be applied. Therefore, L may be in the range of 300 mm to 1 meter based on ionic species, voltage considerations, and other influences according to different embodiments.
還應注意,雖然施加多頻信號可通常用以增大彙聚長度,但當設計限於所施加最高電壓且減去單獨的頻率時,特定多頻設計可在不增加彙聚長度的情況下實現。It should also be noted that although applying multi-frequency signals can generally be used to increase the convergence length, when the design is limited to the highest applied voltage and subtracting individual frequencies, a specific multi-frequency design can be implemented without increasing the convergence length.
圖 9
提供此類佈置的實例,其中繪示聚束器230。漂移管組件232包含:第一接地漂移管234;第一AC漂移管236,鄰近第一接地漂移管234且在第一接地漂移管234的下游安置;第一中間接地漂移管238,佈置在第一AC漂移管236的下游;第二AC漂移管240,鄰近第一中間接地漂移管238且在第一中間接地漂移管238的下游安置;第二中間接地漂移管242,鄰近第二AC漂移管240且在第二AC漂移管240的下游安置;第三AC漂移管244,鄰近第二中間接地漂移管242且在第二中間接地漂移管242的下游安置;以及第二接地漂移管246,其中第二接地漂移管246鄰近第三AC漂移管244且在第三AC漂移管244的下游安置。同樣,提供第一中間接地漂移管238和第二中間接地漂移管242可防止第一AC電壓供應142、第二AC電壓供應144以及第三AC電壓供應146之間的串擾。 Figure 9 provides an example of such an arrangement, in which the
總之,本發明實施例提供使用共同施加到單獨AC漂移管或單獨且個別地施加到專用AC漂移管的多頻信號來控制的聚束器。雖然並不限制,但各種實施例可採用如下表I中列出的可商購頻率。
上表I示出各種ISM頻率,如由美國FCC所定義,其中在本發明實施例中,每一頻率將為施加到信號的基頻的整數倍。因此,在兩倍頻率實施例中,13.56兆赫和27.12兆赫的組合為合適的,在三倍頻率實施例中,13.56兆赫和27.12兆赫以及40.68兆赫的組合為合適的,等等。Table I above shows various ISM frequencies, as defined by the US FCC, where in the embodiment of the present invention, each frequency will be an integer multiple of the fundamental frequency applied to the signal. Therefore, in the double frequency embodiment, the combination of 13.56 MHz and 27.12 MHz is suitable, in the triple frequency embodiment, the combination of 13.56 MHz, 27.12 MHz and 40.68 MHz is suitable, and so on.
鑒於前述內容,通過本文中揭露的實施例達成至少以下優勢。通過提供複合AC電壓信號來驅動聚束器,使得基本上更大離子束電流可經傳輸穿過安置在下游的LINAC來實現第一優勢。另一優勢為能夠將來自多個AC電源中的給定電源的給定AC信號驅動到專用電極,避免當通過共同電極耦接到公倍數電源經耦接以驅動多個AC電壓信號時可能出現的電源之間的干擾,但在複合AC電壓信號的情況下仍驅動更大離子束電流。In view of the foregoing, at least the following advantages are achieved through the embodiments disclosed herein. The first advantage is achieved by providing a composite AC voltage signal to drive the buncher so that substantially larger ion beam current can be transmitted through the LINAC placed downstream. Another advantage is the ability to drive a given AC signal from a given power source among multiple AC power sources to a dedicated electrode, avoiding possible occurrences when coupled to a common multiple power source through a common electrode and coupled to drive multiple AC voltage signals Interference between power supplies, but still drives a larger ion beam current in the case of a composite AC voltage signal.
雖然已在本文中描述了本揭露的某些實施例,但本揭露不限於此,因為本揭露在範圍上與所屬領域將允許的一樣寬泛,且可同樣地來理解說明書。因此,不應將以上描述解釋為限制性的。所屬領域的技術人員將設想在本文所附的申請專利範圍的範圍和精神內的其它修改。Although certain embodiments of the present disclosure have been described herein, the present disclosure is not limited thereto, because the scope of the present disclosure is as broad as the field will allow, and the description can be understood in the same way. Therefore, the above description should not be construed as restrictive. Those skilled in the art will envision other modifications within the scope and spirit of the patent application appended herein.
100、100A:離子植入系統 102:離子源 106:離子束 107:氣體箱 108:DC加速器柱 109:加速離子束 109A:聚束 109A1:後端 109A2:前端 109B:包 110:分析器 111:上游射束線 114、212:線性加速器 115:高能量離子束 116:濾光磁體 118:掃描器 120:准直器 122:終端站 124:基板 126:加速器工作臺 130、160、200、220、230:聚束器 140、162、166:AC電壓元件 142、214:第一AC電壓供應 144、216:第二AC電壓供應 146:第三AC電壓供應 148:加法器 149:合成AC電壓信號 150、170、201、221、232:漂移管組件 152、182、202、234:第一接地漂移管 154、190、210:第二接地漂移管 156、180、203:AC漂移管組件 158、192:加速工作臺 164:控制器 184、186、188、204、208:AC漂移管 206:中間接地漂移管 234:第一接地漂移管 236:第一AC漂移管 238:第一中間接地漂移管 240:第二AC漂移管 242:第二中間接地漂移管 244:第三AC漂移管 246:第二接地漂移管 600:製程流程 602、604、606、608:框 L:長度 V1 cos(ωt + ϕ1 )、V2 cos(2ωt + ϕ2 )、V3 cos(3ωt + ϕ3 )AC:電壓信號100, 100A: ion implantation system 102: ion source 106: ion beam 107: gas box 108: DC accelerator column 109: accelerated ion beam 109A: buncher 109A1: back end 109A2: front end 109B: package 110: analyzer 111: Upstream beam lines 114, 212: linear accelerator 115: high-energy ion beam 116: filter magnet 118: scanner 120: collimator 122: terminal station 124: substrate 126: accelerator table 130, 160, 200, 220, 230: Bunker 140, 162, 166: AC voltage element 142, 214: First AC voltage supply 144, 216: Second AC voltage supply 146: Third AC voltage supply 148: Adder 149: Synthesized AC voltage signal 150 , 170, 201, 221, 232: Drift tube assembly 152, 182, 202, 234: First grounded drift tube 154, 190, 210: Second grounded drift tube 156, 180, 203: AC drift tube assembly 158, 192: Acceleration table 164: controllers 184, 186, 188, 204, 208: AC drift tube 206: intermediate ground drift tube 234: first ground drift tube 236: first AC drift tube 238: first intermediate ground drift tube 240: Second AC drift tube 242: Second intermediate grounded drift tube 244: Third AC drift tube 246: Second grounded drift tube 600: Process flow 602, 604, 606, 608: Frame L: Length V 1 cos(ωt + ϕ 1 ), V 2 cos(2ωt + ϕ 2 ), V 3 cos(3ωt + ϕ 3 ) AC: voltage signal
圖 1A 繪示根據本揭露的實施例的示例性離子注入系統。圖 1B 繪示根據本揭露的實施例的另一離子注入系統。圖 2 示出根據本揭露的實施例的示例性聚束器。圖 3 繪示根據本揭露的其它實施例的另一示例性聚束器。圖 4 描繪根據本揭露的實施例的漂移管元件的操作的模型化結果。圖 5A 和圖 5B 為示出通過不同聚束器處理的不同離子束射線的相行為的圖表,其突出顯示本發明實施例的益處。圖 6 描繪根據本揭露的一些實施例的示例性製程流程。圖 7 繪示根據本揭露的其它實施例的另一示例性聚束器。圖 8 繪示根據本揭露的其它實施例的另一示例性聚束器。圖 9 繪示根據本揭露的其它實施例的又一示例性聚束器。圖 10 繪示鋸齒波形。 圖式未必按比例繪製。圖式僅為表示圖,並不意圖描繪本揭露的具體參數。圖式意圖描繪本揭露的示例性實施例,且因此不應被視為在範圍上受到限制。在圖式中,相似編號表示相似元件。 FIG. 1A illustrates an exemplary ion implantation system according to an embodiment of the disclosure. FIG. 1B illustrates another ion implantation system according to an embodiment of the disclosure. Figure 2 shows an exemplary buncher according to an embodiment of the present disclosure. Fig. 3 shows another exemplary buncher according to other embodiments of the present disclosure. FIG. 4 depicts the modeled result of the operation of the drift tube element according to an embodiment of the present disclosure. 5A and 5B is a graph showing phase behavior of the ion beam radiation through a different processing of different buncher, which highlight the benefits of embodiments of the present invention. Figure 6 depicts an exemplary process flow according to some embodiments of the present disclosure. Fig. 7 shows another exemplary buncher according to other embodiments of the present disclosure. FIG. 8 shows another exemplary buncher according to other embodiments of the present disclosure. FIG. 9 shows another exemplary buncher according to other embodiments of the present disclosure. Figure 10 shows the sawtooth waveform. The drawings are not necessarily drawn to scale. The drawings are only representations, and are not intended to depict specific parameters of the disclosure. The drawings are intended to depict exemplary embodiments of the present disclosure, and therefore should not be considered as limited in scope. In the drawings, similar numbers indicate similar elements.
100:離子植入系統100: Ion implantation system
102:離子源102: ion source
106:離子束106: ion beam
107:氣體箱107: Gas Box
110:分析器110: Analyzer
111:上游射束線111: Upstream beam line
114:線性加速器114: Linear accelerator
115:高能量離子束115: high energy ion beam
116:濾光磁體116: filter magnet
118:掃描器118: Scanner
120:准直器120: collimator
122:終端站122: terminal station
124:基板124: Substrate
126:加速器工作臺126: Accelerator Workbench
130:聚束器130: Bunker
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US16/928,895 | 2020-07-14 | ||
US16/928,895 US11295931B2 (en) | 2018-08-21 | 2020-07-14 | Apparatus and techniques for generating bunched ion beam |
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