TW202137310A - Surface processing method of silicon carbide wafer - Google Patents

Abstract

A surface processing method of a silicon carbide wafer, including: providing a silicon carbide wafer; in which a surface of the silicon carbide wafer defines a carbon face and a silicon face, and a crystal direction of the carbon face is different from a crystal direction of the silicon face; implementing an organic film forming step, including: wetting the surface of the silicon carbide wafer with an organic solvent to form an organic film on the surface of the silicon carbide wafer; in which the organic solvent has a carbon number not less than 2 and a volatilization rate not greater than 250; and implementing a sacrificial oxide layer forming step, including: placing the silicon carbide wafer covered with the organic film into a high-temperature oxidation furnace, so that the surface of the silicon carbide wafer is formed as a sacrificial oxide layer; in which in the sacrificial oxide layer forming step, the organic film can assist an oxidation rate of the silicon face to be greater than that of the carbon face.

Description

Surface processing method of silicon carbide wafer

The invention relates to a method for processing a wafer, in particular to a method for processing the surface of a silicon carbide wafer.

As a wide band gap semiconductor, silicon carbide wafer has the characteristics of high thermal conductivity and high saturation electron drift rate. With the increasing demand for high-speed and high-frequency radio technology, wide band gap semiconductors have attracted more and more attention. Such semiconductor devices can meet many advantages that ordinary silicon-based semiconductors cannot meet, such as being able to operate at higher power levels and more Work under high temperature and harsher environment. Metal semiconductor field effect transistors and metal oxide semiconductor field effect transistors manufactured on this basis have all been realized. Therefore, it is more and more important to obtain high-quality (such as low defect rate and high flatness) silicon carbide wafers.

In fact, the epitaxial film is very dependent on the silicon carbide wafer. When the surface of the wafer fluctuates greatly due to surface damage, it will seriously affect the quality of the epitaxial film. The grown epitaxial layer will also be affected by wafer surface defects and flatness. All defects on the wafer will be transferred to the new epitaxial layer. Such defects not only cause leakage, but also significantly reduce electron mobility.

In the prior art, in order to remove the surface damage of the silicon carbide wafer, a sacrificial oxide layer can be formed on the surface of the silicon carbide wafer, and then the sacrificial oxide layer is removed to remove the surface damage at once, thereby improving the silicon carbide wafer The surface flatness.

However, the existing methods for forming a sacrificial oxide layer have some technical problems. For example, the oxidation rate of the carbon surface (loss surface) of the silicon carbide wafer is too fast, and the oxidation rate of the silicon surface (processed surface) is too slow. Removal of too much carbon surface oxide layer is easy to cause waste of materials, and it is easy to produce new surface damage due to excessive machining. Furthermore, in order to allow the silicon surface oxide layer to grow to a certain thickness, the growth time of the sacrificial oxide layer will become too long, thereby lengthening the process time.

From another perspective, since the general industry has higher requirements for the processing quality of the silicon surface (processed surface), if the processing time is longer (in order to remove the excessive carbon surface oxide layer), it will increase the surface damage of the silicon surface. Chance.

Therefore, the inventor believes that the above-mentioned shortcomings can be improved, and with great concentration of research and the application of scientific principles, we finally propose an invention with reasonable design and effective improvement of the above-mentioned shortcomings.

The technical problem to be solved by the present invention is to provide a surface processing method for silicon carbide wafers in view of the shortcomings of the prior art.

In order to solve the above technical problems, one of the technical solutions adopted by the present invention is to provide a surface processing method of a silicon carbide wafer, which includes: providing a silicon carbide wafer; wherein a surface of the silicon carbide wafer defines a carbon Surface and a silicon surface, and the crystal orientation of the carbon surface is different from the crystal orientation of the silicon surface; performing an organic thin film forming step, which includes: soaking the surface of the silicon carbide wafer with an organic solvent , So that the organic solvent is formed as an organic film covering the surface of the silicon carbide wafer; wherein the carbon number of the organic solvent is not less than 2, and the volatilization rate is not greater than 250; and a sacrifice is performed The step of forming an oxide layer includes: placing the silicon carbide wafer covered with the organic film in a high-temperature oxidation furnace so that the surface of the silicon carbide wafer is formed as a sacrificial oxide layer; wherein, In the step of forming the sacrificial oxide layer, the organic thin film can assist the oxidation rate of the silicon surface to be greater than that of the carbon surface.

In order to solve the above technical problems, another technical solution adopted by the present invention is to provide a surface processing method of a silicon carbide wafer, which includes: providing a silicon carbide wafer; wherein a carbon is defined on a surface of the silicon carbide wafer. Surface and a silicon surface, and the crystal orientation of the carbon surface is different from the crystal orientation of the silicon surface; performing a wax film forming step including: soaking the surface of the silicon carbide wafer with a liquid wax , So that the liquid wax is formed as a wax film covering the surface of the silicon carbide wafer; and implementing a sacrificial oxide layer forming step, which includes: removing the silicon carbide film covered with the wax film The wafer is placed in a high-temperature oxidation furnace so that the surface of the silicon carbide wafer is formed as a sacrificial oxide layer; wherein, in the step of forming the sacrificial oxide layer, the wax film can assist in making the The oxidation rate of the silicon surface is greater than that of the carbon surface.

One of the beneficial effects of the present invention is that the surface processing method of silicon carbide wafers provided by the present invention can perform an organic thin film (or wax film) forming step, which includes: using an organic solvent (or liquid wax) Wet the surface of the silicon carbide wafer so that the organic solvent (or liquid wax) is formed as an organic thin film (or wax film) covering the surface of the silicon carbide wafer" and " A step of forming a sacrificial oxide layer is performed, which includes: placing the silicon carbide wafer covered with the organic film (or wax film) in a high-temperature oxidation furnace so that the surface of the silicon carbide wafer is formed Is a sacrificial oxide layer, so that in the step of forming the sacrificial oxide layer, the organic film (or wax film) can assist in making the oxidation rate of the silicon surface greater than that of the carbon surface. Oxidation rate, thereby reducing material waste, reducing the chance of new surface damage, and shortening the growth time of the sacrificial oxide layer.

In order to further understand the features and technical content of the present invention, please refer to the following detailed description and drawings about the present invention. However, the provided drawings are only for reference and description, and are not used to limit the present invention.

The following are specific specific examples to illustrate the disclosed embodiments of the present invention, and those skilled in the art can understand the advantages and effects of the present invention from the content disclosed in this specification. The present invention can be implemented or applied through other different specific embodiments, and various details in this specification can also be based on different viewpoints and applications, and various modifications and changes can be made without departing from the concept of the present invention. In addition, the drawings of the present invention are merely schematic illustrations, and are not drawn according to actual dimensions, and are stated in advance. The following embodiments will further describe the related technical content of the present invention in detail, but the disclosed content is not intended to limit the protection scope of the present invention.

It should be understood that although terms such as "first", "second", and "third" may be used herein to describe various elements or signals, these elements or signals should not be limited by these terms. These terms are mainly used to distinguish one element from another, or one signal from another signal. In addition, the term "or" used in this document may include any one or a combination of more of the associated listed items depending on the actual situation.

[First Embodiment]

Please refer to FIG. 1 to FIG. 7. The first embodiment of the present invention provides a surface processing method of a silicon carbide wafer. The surface processing method of the silicon carbide wafer includes: step S110, step S120, step S130, step S140, and step S150. It must be noted that the order of the steps and the actual operation mode described in this embodiment can be adjusted according to requirements, and are not limited to those described in this embodiment.

As shown in FIG. 1, the step S110 is: providing a silicon carbide wafer 100 (silicon carbide wafer). Wherein, the silicon carbide wafer 100 has two surfaces on opposite sides, and at least one surface 110 of the silicon carbide wafer 100 defines a carbon face 111 (carbon face) and a silicon face 112 (silicon face), and The crystal orientation of the carbon surface 111 is different from the crystal orientation of the silicon surface 112. Furthermore, the carbon surface 111 may be referred to as a lossy surface, and the silicon surface 112 may be referred to as a processed surface.

Furthermore, in the step S110, there is surface damage D on the surface of the silicon carbide wafer 100, and the surface damage D is distributed on the carbon surface 111 and the silicon surface 112. Wherein, the surface damage D may be, for example, surface micro protrusions, surface micro depressions, surface scratches, or residual surface stress, but the present invention is not limited thereto.

It is worth mentioning that, generally speaking, epitaxial films are strongly dependent on silicon carbide wafers. When the surface of the wafer fluctuates greatly due to surface damage, the quality of the epitaxial film will be severely affected, and the grown epitaxial layer will also be affected by the surface damage and flatness of the wafer. All defects on the wafer will be transferred to the new epitaxial layer. Such defects not only cause leakage, but also significantly reduce electron mobility.

In order to improve the above-mentioned technical problems, one of the objectives of the present invention is to “form a sacrificial oxide layer 120 on the surface 110 of the silicon carbide wafer 100 (as shown in FIG. 6)” and “remove the sacrificial oxide layer 120”. Divide" so that the surface damage D existing on the surface of the silicon carbide wafer 100 can be removed at the same time (as shown in FIG. 7). In this way, the surface 110 of the silicon carbide wafer 100 can have good flatness, thereby improving the quality of the epitaxial film (such as surface flatness).

However, the existing methods of forming sacrificial oxide layers have some technical problems. For example, the oxidation rate of the carbon surface (loss surface) is too fast, and the oxidation rate of the silicon surface (processed surface) is too slow. The carbon surface oxide layer is prone to waste of materials, and new surface damage is likely to occur due to excessive machining. Furthermore, in order to allow the silicon surface oxide layer to grow to a certain thickness, the growth time of the sacrificial oxide layer will become too long, thereby lengthening the process time.

From another perspective, since the general industry has higher requirements for the processing quality of the silicon surface (processed surface), if the processing time is longer (in order to remove the excessive carbon surface oxide layer), it will increase the surface damage of the silicon surface. Chance.

Accordingly, another object of the present invention is to "form an organic film OF on the surface 110 of the silicon carbide wafer 100 (as shown in FIG. 4 or FIG. 5)" so that the organic film OF can assist in adjusting the silicon surface. The oxidation rate of the carbon surface and the oxidation rate of the carbon surface. More specifically, the organic film OF can assist the oxidation rate of the silicon surface to be greater than that of the carbon surface, thereby reducing material waste, reducing the chance of new surface damage, and shortening the growth time of the sacrificial oxide layer.

In order to achieve the above technical objectives, this embodiment will be implemented through the following steps S120 to S150 to describe the present invention more clearly.

As shown in FIG. 2, the step S120 is: implementing a wafer cleaning step. The wafer cleaning step includes: cleaning the surface 110 of the silicon carbide wafer 100 with a cleaning liquid L to remove contaminants (such as particles, metal impurities, organic pollutants, etc.) on the surface of the silicon carbide wafer 100 Naturally generated oxide layer and micro-roughness on the wafer surface... etc.) are removed.

In this embodiment, the wafer cleaning step is mainly to clean the surface 110 of the silicon carbide wafer 100 by using the RCA standard cleaning method. Wherein, the cleaning liquid L may be, for example, SC-1 (APM), SC-2 (HPM), SPM, HF, or BHF, etc., but the present invention is not limited thereto.

As shown in FIGS. 3 and 4, the step S130 is: implementing an organic thin film forming step. The organic thin film forming step includes: soaking the surface 110 of the silicon carbide wafer 100 with an organic solvent OS (organic solvent), so that the organic solvent OS is formed to cover the surface 110 of the silicon carbide wafer 100 An organic film OF (organic film), and preferably a liquid organic film OF. In other words, the surface 110 of the silicon carbide wafer 100 can be wetted by the organic solvent OS to form an organic film OF covering it.

In order to allow the organic thin film OF to exert the expected effects (such as increasing the oxidation rate of the silicon surface and reducing the oxidation rate of the carbon surface), the carbon number of the organic solvent OS has a preferred range. In this embodiment, the carbon number of the organic solvent OS is preferably not less than 2, and particularly preferably between 2 and 8, but the present invention is not limited to this.

In order to allow the organic solvent OS to be smoothly formed as an organic thin film OF on the surface 110 of the wafer, the volatilization rate and boiling point of the organic solvent OS also have a preferred range. In this embodiment, based on the volatilization rate of butyl acetate being 100, the volatilization rate of the organic solvent OS is preferably not more than 250, and particularly preferably not more than 230. Furthermore, the boiling point of the organic solvent OS is preferably not less than 70°C, and particularly preferably not less than 75°C.

Furthermore, the material type of the organic solvent OS may be, for example, an alcohol solvent, a ketone solvent, a hydrocarbon solvent, or an ether solvent.

In this embodiment, the organic solvent OS is preferably an alcohol solvent. Wherein, the alcohol solvent may be, for example, ethanol, isopropanol, or butanol, and the alcohol solvent is preferably isopropanol. In more detail, among the alcohol solvents exemplified above, ethanol has a carbon number of 2, a boiling point of 78.1°C, and a volatilization rate of 203. Isopropyl alcohol has a carbon number of 3, a boiling point of 82.5°C, and a volatilization rate of 205. Butanol has a carbon number of 4, a boiling point of 117.1°C, and a volatilization rate of 45. That is to say, the carbon number of the above-exemplified organic solvents is not less than 2, the volatilization rate is not more than 250, and the boiling point is not less than 70°C.

Furthermore, in this embodiment, the organic film OF is formed by dipping.

More specifically, as shown in FIG. 3, the silicon carbide wafer 100 may be immersed in an organic solvent OS first, so that the organic solvent OS is soaked on the surface 110 of the silicon carbide wafer 100. Then, as shown in FIG. 4, the silicon carbide wafer 100 is taken out from the organic solvent OS, so that the surface 110 of the silicon carbide wafer 100 is formed with an organic film OF covering it. Wherein, the immersion time of the silicon carbide wafer 100 in the organic solvent OS is not more than 5 minutes, and preferably is between 30 seconds and 5 minutes. The immersion temperature of the silicon carbide wafer 100 in the organic solvent OS is not greater than 30°C, and preferably between 20°C and 30°C.

As shown in FIG. 5, in another embodiment of the present invention, the organic thin film OF can also be wetted with an organic solvent OS on the surface 110 of the silicon carbide wafer 100 by liquid coating, so that the The organic solvent OS is formed as an organic thin film OF covering the surface of the silicon carbide wafer 100.

As shown in FIG. 6, the step S140 is: implementing a sacrificial oxide layer forming step. The step of forming the sacrificial oxide layer includes: placing the silicon carbide wafer 100 covered with the organic film OF in a high temperature oxidation furnace C, so that the surface 110 of the silicon carbide wafer 100 is formed as a sacrificial oxide layer 120 .

More specifically, in this embodiment, a high temperature wet oxygen process is used to form the sacrificial oxide layer 120. The high temperature wet oxygen process includes: placing the silicon carbide wafer 100 covered with the organic film OF in a high temperature oxidation furnace C. Then, a mixed gas G of water vapor and oxygen is introduced into the high-temperature oxidation furnace C, so that the surface 110 of the silicon carbide wafer 100 is formed as the sacrificial oxide layer 120. Wherein, the temperature of the high-temperature oxidation furnace C is preferably between 1000°C and 1300°C, and particularly preferably between 1100°C and 1200°C. Furthermore, the oxidation time of the silicon carbide wafer 100 in the high-temperature oxidation furnace C is preferably between 1 hour and 5 hours, and particularly preferably between 2 hours and 4 hours.

In this embodiment, the organic thin film OF is covered on the sacrificial oxide layer 120 (as shown in FIG. 6), but the present invention is not limited to this. The organic thin film OF may also be used in a high temperature and humid oxygen process, for example. Evaporates and is removed.

It is worth mentioning that one of the main features of the present invention is that according to the material selection of the organic solvent OS (for example: an organic solvent with a carbon number not less than 2 and a volatilization rate not greater than 250), the sacrificial oxide layer In the forming step, the organic film OF can assist the oxidation rate of the silicon surface 112 to be greater than that of the carbon surface 111.

In terms of relative values, the oxidation rate of the silicon surface 112 is preferably greater than 1.5 times the oxidation rate of the carbon surface 111, and the oxidation rate of the silicon surface 112 is particularly preferably greater than that of the carbon surface 111. More than 2.0 times the oxidation rate.

In terms of absolute value, the oxidation rate of the silicon surface 112 is not less than 100 nanometers/hour, and the oxidation rate of the carbon surface 111 is not more than 80 nanometers/hour.

In an embodiment of the present invention, if the organic solvent OS is an alcohol solvent, the oxidation rate of the silicon surface 112 is not less than 200 nm/h, and the oxidation rate of the carbon surface 111 is between 40 to 80 nanometers/hour. In other words, the alcohol solvent has a significant effect in assisting in increasing the oxidation rate of the silicon surface 112.

Furthermore, the thickness range formed by the sacrificial oxide layer 120 completely covers the surface damage D (as shown in FIG. 6), so that when the sacrificial oxide layer 120 is removed, the surface damage D can also be Removed together.

In an embodiment of the present invention, the thickness range formed by the sacrificial oxide layer 120 is preferably not less than 800 nanometers, and particularly preferably between 800 nanometers and 1,200 nanometers.

It is worth mentioning that, in this embodiment, the organic film OF can be mainly used as a catalyst for the oxidation of the silicon surface 112 to increase the oxidation rate of the silicon surface 112, and can be used as an inhibitor of the oxidation of the carbon surface 111 to increase the oxidation rate of the silicon surface 112. Reduce the oxidation rate of carbon surface 111. Furthermore, since the organic film OF is formed by the organic solvent OS and has a carbon chain, the organic film OF has a higher affinity with the carbon surface 111 (or can form a van der Waal with the carbon surface 111). force). When the organic film OF covers the surface 110 of the silicon carbide wafer 100, the organic film OF can shield the carbon surface 111 to reduce the oxidation rate of the carbon surface 111, and can expose the silicon surface 112 to improve the silicon The oxidation rate of face 112. It should be noted that in the step of forming the sacrificial oxide layer 120, the organic thin film OF only assists in the increase or decrease of the oxidation rate, and no chemical reaction occurs in itself.

In addition, after the thickness range of the sacrificial oxide layer 120 reaches a predetermined value, the silicon carbide wafer 100 can be moved to a room temperature environment for cooling to facilitate subsequent processing steps.

As shown in FIG. 7, the step S150 is: performing a sacrificial oxide layer removal step. The step of removing the sacrificial oxide layer includes: removing the sacrificial oxide layer 120 and the organic film OF on the surface of the silicon carbide wafer 100 by a Chemical-Mechanical Planarization (CMP) process or an acid etching process. remove. Thereby, the surface damage on the surface of the silicon carbide wafer 100 can also be removed at the same time, so that the surface of the silicon carbide wafer 100 has a high flatness.

In this embodiment, a surface roughness (Ra) of the surface 110 of the silicon carbide wafer 100 is preferably not more than 0.1 nanometer (nm), and particularly preferably not more than 0.09 nanometer.

[Second Embodiment]

Referring to FIGS. 8 to 12, the second embodiment of the present invention also provides a surface processing method of a silicon carbide wafer. This embodiment is substantially the same as the above-mentioned embodiment. The difference is that this embodiment does not use an organic film to increase the oxidation rate of the silicon surface and reduce the oxidation rate of the carbon surface, but instead uses a wax film to achieve the above purpose.

Furthermore, the surface processing method of the silicon carbide wafer of this embodiment includes step S110', step S120', step S130', step S140', and step S150'. It must be noted that the order of the steps and the actual operation mode described in this embodiment can be adjusted according to requirements, and are not limited to those described in this embodiment.

As shown in Fig. 8, the step S110' is: providing a silicon carbide wafer 100'. Wherein, a surface 110' of the silicon carbide wafer 100' defines a carbon surface 111' and a silicon surface 112', and the crystal orientation of the carbon surface 111' is different from that of the silicon surface 112'.

As shown in Fig. 9, the step S120' is to implement a wafer cleaning step. The wafer cleaning step includes: cleaning the surface 110' of the silicon carbide wafer 100' with a cleaning liquid L to remove contaminants (such as particles, metal impurities, organic particles) on the surface of the silicon carbide wafer 100'. Contaminants, naturally occurring oxide layers and micro-roughness on the wafer surface... etc.) are removed.

As shown in Fig. 10, the step S130' is to implement a wax film forming step. The wax film forming step includes: soaking the surface 110' of the silicon carbide wafer 100' with a liquid wax, so that the liquid wax is formed to cover the surface 110' of the silicon carbide wafer 100' On a wax film WF (wax film).

Wherein, the liquid wax is a mixture, and the components of the mixture may include, for example, water, fatty acids, fatty alcohols, oily substances, and surfactants.

Furthermore, in order to allow the liquid wax to smoothly form a wax film WF on the surface of the wafer, the flash point of the liquid wax has a preferred range. In this embodiment, the flash point of the liquid wax is preferably not more than 50°C, but the present invention is not limited to this.

In this embodiment, the wax film WF is formed by immersing the silicon carbide wafer 100' in liquid wax (not shown in the figure), and then taking out the silicon carbide wafer 100'.

It is worth mentioning that due to the high viscosity of general liquid wax, in order to avoid excessive liquid wax on the surface 110' of the silicon carbide wafer 100', excessive liquid wax on the surface 110' of the silicon carbide wafer 100' The wax can be partially removed, for example, by attaching toilet paper or absorbent cloth (not shown in the figure), but the present invention is not limited to this.

As shown in FIG. 11, the step S140' is to implement a sacrificial oxide layer formation step. The step of forming the sacrificial oxide layer includes: placing the silicon carbide wafer 100' covered with the wax film WF in a high-temperature oxidation furnace C, so that the surface 110' of the silicon carbide wafer 100' is formed as a sacrificial Oxide layer 120'.

Wherein, in the step of forming the sacrificial oxide layer, the wax film WF can assist in making the oxidation rate of the silicon surface 112' greater than that of the carbon surface 111'.

More specifically, in this embodiment, the oxidation rate of the silicon surface 112' is not less than 100 nanometers/hour, and the oxidation rate of the carbon surface 111' is between 40 to 80 nanometers/hour.

In addition, it is worth mentioning that in this embodiment, the wax film WF is covered on the sacrificial oxide layer 120' (as shown in FIG. 11), but the present invention is not limited to this.

As shown in Fig. 12, the step S150' is to perform a sacrificial oxide layer removal step. The step of removing the sacrificial oxide layer includes: removing the sacrificial oxide layer 120' and the wax film WF on the surface of the silicon carbide wafer 100' by a chemical mechanical planarization process or an acid etching process. Thereby, the surface damage on the surface of the silicon carbide wafer 100' can also be removed at the same time, so that the surface of the silicon carbide wafer 100' has a high flatness.

[Beneficial effects of the embodiment]

One of the beneficial effects of the present invention is that the surface processing method of silicon carbide wafers provided by the present invention can perform an organic thin film (or wax film) forming step, which includes: using an organic solvent (or liquid wax) Wet the surface of the silicon carbide wafer so that the organic solvent (or liquid wax) is formed as an organic thin film (or wax film) covering the surface of the silicon carbide wafer" and " A step of forming a sacrificial oxide layer is performed, which includes: placing the silicon carbide wafer covered with the organic film (or wax film) in a high-temperature oxidation furnace so that the surface of the silicon carbide wafer is formed Is a sacrificial oxide layer, so that in the step of forming the sacrificial oxide layer, the organic film (or wax film) can assist in making the oxidation rate of the silicon surface greater than that of the carbon surface. Oxidation rate, thereby reducing material waste, reducing the chance of new surface damage, and shortening the growth time of the sacrificial oxide layer.

The content disclosed above is only the preferred and feasible embodiments of the present invention, and does not limit the scope of the patent application of the present invention. Therefore, all equivalent technical changes made using the description and schematic content of the present invention are included in the application of the present invention. Within the scope of the patent.

100, 100’: Silicon carbide wafer 110, 110’: surface 111, 111’: Carbon surface 112, 112’: Silicon surface 120, 120’: Sacrificial oxide layer D: Surface damage L: cleaning liquid OS: organic solvent OF: organic film WF: Cere C: High temperature oxidation furnace G: Mixed gas

FIG. 1 is a schematic diagram of step S110 in the first embodiment of the present invention.

FIG. 2 is a schematic diagram of step S120 in the first embodiment of the present invention.

FIG. 3 is a schematic diagram (1) of step S130 in the first embodiment of the present invention.

FIG. 4 is a schematic diagram (2) of step S130 in the first embodiment of the present invention.

FIG. 5 is a schematic diagram of a variation of step S130 in the first embodiment of the present invention.

FIG. 6 is a schematic diagram of step S140 in the first embodiment of the present invention.

FIG. 7 is a schematic diagram of step S150 in the first embodiment of the present invention.

FIG. 8 is a schematic diagram of step S110 in the second embodiment of the present invention.

FIG. 9 is a schematic diagram of step S120 in the second embodiment of the present invention.

FIG. 10 is a schematic diagram of step S130 in the second embodiment of the present invention.

FIG. 11 is a schematic diagram of step S140 in the second embodiment of the present invention.

FIG. 12 is a schematic diagram of step S150 in the second embodiment of the present invention.

100: Silicon carbide wafer

110: Surface

111: carbon surface

112: Silicon surface

120: Sacrificial oxide layer

D: Surface damage

OF: organic film

C: High temperature oxidation furnace

G: Mixed gas

Claims (10)

A surface processing method for silicon carbide wafers, which includes: A silicon carbide wafer is provided; wherein a surface of the silicon carbide wafer defines a carbon surface and a silicon surface, and the crystal orientation of the carbon surface is different from the crystal orientation of the silicon surface; Performing an organic thin film forming step, which includes: wetting the surface of the silicon carbide wafer with an organic solvent, so that the organic solvent is formed as an organic film covering the surface of the silicon carbide wafer. Film; wherein the carbon number of the organic solvent is not less than 2, and the volatilization rate is not more than 250; and A step of forming a sacrificial oxide layer is performed, which includes: placing the silicon carbide wafer covered with the organic film in a high-temperature oxidation furnace so that the surface of the silicon carbide wafer is formed as a sacrificial oxide layer ； Wherein, in the step of forming the sacrificial oxide layer, the organic film can assist the oxidation rate of the silicon surface to be greater than that of the carbon surface. The surface processing method of a silicon carbide wafer according to claim 1, wherein, in the step of forming the sacrificial oxide layer, the oxidation rate of the silicon surface is greater than 1.5 times the oxidation rate of the carbon surface . The surface processing method of a silicon carbide wafer according to claim 1, wherein, in the step of forming the sacrificial oxide layer, the oxidation rate of the silicon surface is not less than 100 nm/hour, and the carbon surface is The oxidation rate is not more than 80 nanometers/hour. The surface processing method of a silicon carbide wafer according to claim 1, wherein, in the organic thin film forming step, the organic solvent is an alcohol solvent. The surface processing method of a silicon carbide wafer according to claim 4, wherein, in the step of forming the sacrificial oxide layer, the oxidation rate of the silicon surface is not less than 200 nm/hour, and the carbon surface is The oxidation rate is between 40 and 80 nanometers/hour. The surface processing method of a silicon carbide wafer according to claim 1, wherein, in the step of providing the silicon carbide wafer, the surface of the silicon carbide wafer has surface damage; wherein, the sacrificial oxide layer In the forming step, the thickness range of the sacrificial oxide layer completely covers the surface damage. The surface processing method of a silicon carbide wafer according to claim 6, wherein the thickness range formed by the sacrificial oxide layer is not less than 800 nanometers. The method for processing the surface of a silicon carbide wafer according to claim 6, wherein, after the step of forming the sacrificial oxide layer, the method for processing the surface of the silicon carbide wafer further comprises: performing a step of removing the sacrificial oxide layer, which includes : Using a chemical mechanical planarization process or an acid etching process to remove the sacrificial oxide layer on the surface of the silicon carbide wafer to make the surface roughness of the silicon carbide wafer (Ra) is not more than 0.1 nanometers. A surface processing method for silicon carbide wafers, which includes: A silicon carbide wafer is provided; wherein one surface of the silicon carbide wafer defines a carbon surface and a silicon surface, and the crystal orientation of the carbon surface is different from the crystal orientation of the silicon surface; Implementing a wax film forming step, which includes: soaking the surface of the silicon carbide wafer with a liquid wax, so that the liquid wax is formed as a wax covering the surface of the silicon carbide wafer Membrane; and A step of forming a sacrificial oxide layer is performed, which includes: placing the silicon carbide wafer covered with the wax film in a high-temperature oxidation furnace so that the surface of the silicon carbide wafer is formed as a sacrificial oxide layer ； Wherein, in the step of forming the sacrificial oxide layer, the wax film can assist in making the oxidation rate of the silicon surface greater than that of the carbon surface. The surface processing method of a silicon carbide wafer according to claim 9, wherein the oxidation rate of the silicon surface is not less than 100 nanometers/hour, and the oxidation rate of the carbon surface is between 40 and 80 nanometers Meters per hour.

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