以下參照圖式說明實施型態。又，於以下的說明，針對具有約略相同的機能及構成之構成要素，賦予相同符號，重複的說明僅在必要的場合進行。此外，以下所示的各實施型態，僅係例示供具體化此實施型態的技術思想的裝置或方法，實施型態的技術思想，並不是要特定構成零件的材質、形狀、構造、配置等成為以下者。實施型態之技術思想，於申請專利範圍，可以施加種種的變更。
1. 第1實施型態
說明相關於第1實施型態的陽極處理裝置。
1.1 全體構成
首先，針對陽極處理裝置的全體構成之一例用圖1進行說明。圖1係陽極處理裝置之方塊圖。
如圖1所示，陽極處理裝置1，包含：陽極化成處理部10、電解液A供給單元11、電解液B供給單元12、電流供給部13及控制電路14。
陽極化成處理部10，包含處理槽及對應於處理槽的電極(陽極及陰極)，進行半導體基板表面的陽極化成處理。針對陽極化成處理部10的構成敘述於後。
電解液A供給單元11，對設於陽極化成處理部10內的處理槽供給電解液A。又，電解液A供給單元11，具有供調整供給至處理槽的電解液A的液壓之用的未圖示的機構(例如泵等)。電解液A是用於陽極化成處理的處理液。作為電解液A，例如，可以使用含氟化氫(HF)的液體。又，本實施型態之電解液A供給單元11，於陽極化成處理部10與電解液A混合槽20，不具有使液體(電解液A)循環的機能。亦即，電解液A供給單元11，把未使用(新液)的電解液A供給至陽極化成處理部10。
電解液A供給單元11，包含：電解液A混合槽20、供給控制部21、複數之液體供給部22(在圖1之例，為3個液體供給部22a～22c)及濃度感測器23。
電解液A混合槽20，是供混合複數液體產生電解液A之槽。電解液A供給單元11，例如，混合作為原料之3種液體A～C產生電解液A。3種液體A～C，例如亦可為HF(氫氟酸)溶液、DIW(Deionized Water，去離子水)、及乙醇等。又，用於電解液A的產生之液體不限於3種。此外，於電解液A的產生亦可使用液體以外的材料。產生的電解液A，通過配管17供給至陽極化成處理部10內的處理槽。
供給控制部21，藉由控制電路14的控制，控制供給至電解液A混合槽20的液體A～C的供給量。例如，供給控制部21，包含設於各液體的供給線之閥及流量計。
液體供給部22a～22c，藉由供給線(配管)，分別與電解液A混合槽20連接。液體供給部22a～22c，透過供給線，分別把液體A～C供給至電解液A混合槽20。液體供給部22a～22c，例如，亦可分別具有由液體A～C的容器壓送液體A～C之用的機構。
濃度感測器23，監測電解液A混合槽20內的電解液A的濃度(例如F濃度)，將其結果傳送至控制電路14。控制電路14，根據濃度監測的結果，控制供給控制部21，調整電解液A的濃度。
電解液B供給單元12，對與設於陽極化成處理部10內的被供給電解液A的處理槽不同之處理槽供給電解液B。又，電解液B供給單元12，具有供調整供給至處理槽的電解液B的液壓之用的未圖示的機構(例如泵等)。電解液B是用於陽極化成處理的處理液。電解液B亦可與電解液A相同，亦可不同。以下，針對電解液B，係與電解液A濃度(F濃度)不同的場合進行說明。電解液B，使用含HF的液體。又，本實施型態之電解液B供給單元12，於陽極化成處理部10與電解液B混合槽30具有使電解液B循環的機能。亦即，電解液B供給單元12，可以進行由陽極化成處理部10回收的液體之成分調整，再度對陽極化成處理部10供給。
電解液B供給單元12，包含：電解液B混合槽30、供給控制部31、複數之液體供給部32(在圖1之例，為3個液體供給部32a～32c)及濃度感測器33。
電解液B混合槽30，是供混合複數液體產生電解液B之槽。電解液B供給單元12，作為原料，可以混合透過配管16由陽極化成處理部10回收的液體，與3種液體D～F，進行電解液B的產生及濃度調整。3種液體D～F，例如亦可為HF溶液、DIW、及乙醇。又，用於電解液B的產生之液體不限於3種。此外，於電解液B的產生亦可使用液體以外的材料。產生的電解液B，通過配管15供給至陽極化成處理部10的處理槽之一。此外，電解液B混合槽30，具有在槽內的液體溢流的場合等供進行排液處理之用的溢流管。
供給控制部31，藉由控制電路14的控制，控制供給至電解液B混合槽30的液體D～F的供給量。例如，供給控制部31，包含設於各液體的供給線之閥及流量計。
液體供給部32a～32c，藉由供給線，分別與電解液B混合槽30連接。液體供給部32a～32c，透過供給線，分別把液體D～F供給至電解液B混合槽30。液體供給部32a～32c，例如，亦可分別具有由液體D～F的容器壓送液體D～F之用的機構。
濃度感測器33，監測電解液B混合槽30內的電解液B的濃度(例如F濃度)，將其結果傳送至控制電路14。控制電路14，根據濃度監測的結果，控制供給控制部31，調整電解液B的濃度。
電流供給部13，藉由控制電路14的控制，對設於陽極化成處理部10內的電極供給電流。
控制電路14，控制陽極處理裝置1的全體。
1.2 陽極化成處理部的詳細構成
其次，針對陽極化成處理部10的詳細構成之一例，用圖2及圖3進行說明。圖2係陽極化成處理部10之立體圖。圖3係被供給電解液A及B的狀態之陽極化成處理部10之剖面圖。圖2及圖3之例，顯示陽極化成處理部10，包含被連接分別不同的電流源的2個上部電極與2個處理槽的場合。以下，本構成亦標記為「分割電極/複數電源/分割處理槽」。
如圖2所示，陽極化成處理部10，包含處理槽101及103、水盤102、上部電極104及106、絕緣體105、及下部電極107。又，絕緣體105亦可被取消。於此場合，例如，於上部電極104與上部電極106之間，設有空氣間隙亦可。亦即，只要是上部電極104與上部電極106不導電連接的構成即可。
處理槽101，例如具有圓筒形狀。處理槽101的內徑，例如與成為陽極化成處理的對象之半導體基板1000的內徑大致相同。以下，針對半導體基板1000為單晶矽(Si)基板的場合進行說明。處理槽101之底面接於下部電極107。陽極化成處理時，處理槽101的上端，位於半導體基板1000的表面附近。亦即，處理槽101的上端，未接於半導體基板1000的下面(被陽極化成處理之面)。處理槽101，例如以對電解液A及B具有耐性的絕緣材料構成。於處理槽101被連接著配管15及18。配管15，係往處理槽101之液體供給線。配管18，係來自處理槽101之液體排出線。
水盤102，是為了回收由處理槽101的上端溢出的液體而設的。水盤102，例如具有圓筒形狀。水盤102的內徑，比處理槽101、上部電極104及半導體基板1000的外徑還大。水盤102，例如以與處理槽101成同心圓狀地被配置。水盤102的底面，例如接於處理槽101的上端或上端附近的外周。水盤上端的高度位置，比處理槽101的上端還高。水盤102，例如以對電解液A及B具有耐性的絕緣材料構成。又，水盤102亦可為與處理槽101相同的材料。於水盤102，被連接著配管16。配管16，係來自水盤102之液體排出線。
處理槽103，例如具有圓筒形狀。處理槽103的內徑，比處理槽101的內徑還小。處理槽103，底面接於下部電極107，例如以與處理槽101成同心圓狀地被配置。處理槽103的上端高度位置，與處理槽101大致相同。處理槽103的上端，與處理槽101同樣，未接於半導體基板1000的下面。處理槽103，例如以對電解液A及B具有耐性的絕緣材料構成。又，處理槽103亦可為與處理槽101相同的材料。於處理槽103被連接著配管17及19。配管17，係往處理槽103之液體供給線。配管19，係來自處理槽103之液體排出線。
上部電極104，於使用處理槽101之陽極化成處理作為陽極發揮機能。亦即，上部電極104對向於處理槽101。上部電極106，於使用處理槽103之陽極化成處理作為陽極發揮機能。亦即，上部電極106對向於處理槽103。於處理槽101及103上方，以上部電極106為中心，絕緣體105及上部電極104設為同心圓狀。亦即，上部電極106與104設為同心圓狀，上部電極106與104之間設有絕緣體105。藉此，上部電極106與104不導電連接的。
上部電極106的外徑，與處理槽103的外徑大致相同。上部電極104的外徑，與處理槽101的外徑大致相同。亦即，上部電極104的外徑，與半導體基板1000大致相同。此外，上部電極104的內徑，與處理槽103的外徑大致相同。
在本實施型態，對上部電極104及106，由電流供給部13分別供給不同的電流。更具體地說，電流供給部13包含電流源40及41。電流源40，被連接於上部電極104及下部電極107，陽極化成處理時對上部電極104供給任意的電流。電流源41，被連接於上部電極106及下部電極107，陽極化成處理時對上部電極106供給任意的電流。
下部電極107，與上部電極104及106對向，於陽極化成處理作為陰極發揮機能。上部電極104及106，以及下部電極107，由導電材料構成。
又，對於處理槽101及103以及水盤102，配管15～19分別設有複數個亦可。
如圖3所示，陽極化成處理部10包含保持部108。半導體基板1000，以藉由保持部108，背面接於上部電極104及106的底面，表面(被陽極化成之面)朝向下(處理槽101及103)的方式設置。處理槽101的上端與半導體基板1000之間，設有間隙GP1。此外，處理槽103的上端與半導體基板1000之間設有間隙GP2。
在本實施型態，同時對陽極化成處理部10供給電解液A及B的場合，供給至處理槽103的電解液A的液壓，比供給至處理槽101的電解液B的液壓還高(電解液A的液壓＞電解液B的液壓)。此外，陽極化成處理時，配管18及19為關閉狀態。藉此，通過間隙GP2，電解液A由處理槽103朝向處理槽101流入。此時，電解液A的液壓比電解液B的液壓還高，所以電解液B不會由處理槽101朝向處理槽103流入。此外，處理槽101的剩餘的電解液B(混合了電解液A的電解液B)，通過間隙GP1，流入水盤102。
又，在圖3之例，處理槽101的外徑，比半導體基板1000的內徑還小。因此，處理槽101的上端與半導體基板1000之間設有間隙GP1，但不限於此。例如，亦可為處理槽101的內徑比包含保持部108的半導體基板1000的外徑還大，處理槽的上端位於比半導體基板1000的被陽極化成處理之面(下面)還高的位置。在此場合，處理槽101的上端內側，與保持部108(及半導體基板1000的外徑)之間設有間隙GP1。
1.3 電解液的濃度調整之一例
其次，針對電解液的濃度調整之一例，用圖4進行說明。圖4，係顯示電解液B供給單元12之濃度感測器33的監測結果之圖。
如圖4所示，首先，電解液B供給單元12於時刻t0，於電解液B混合槽30產生預先被設定的調整目標濃度之電解液B。接著，電解液B供給單元12，把產生的電解液B供給至處理槽101。
於時刻t1，開始陽極化成處理。時刻t0～t6之期間，實行陽極化成處理。此期間，電解液B在處理槽101與電解液B混合槽30之間循環。
時刻t1～t2之期間，由於陽極化成處理，電解液B的濃度徐徐降低。
於時刻t2，電解液B的濃度，降低到可以實行預先設定的陽極化成處理的下限濃度時，電解液B供給單元12，於電解液B混合槽30內，追加液體D～F之至少1種，開始電解液B的濃度調整。
時刻t2～t3之期間，電解液B供給單元12，實行電解液B的濃度調整。
於時刻t3，電解液B的濃度，達到調整目標濃度時，電解液B供給單元12，結束電解液B的濃度調整。
時刻t3～t4之期間，由於陽極化成處理，電解液B的濃度徐徐降低。
於時刻t4，電解液B的濃度，降低到可以實行預先設定的陽極化成處理的下限濃度時，電解液B供給單元12，再度開始電解液B的濃度調整。
時刻t4～t5之期間，電解液B供給單元12，實行電解液B的濃度調整。
於時刻t5，電解液B的濃度，達到調整目標濃度時，電解液B供給單元12，結束電解液B的濃度調整。
於時刻t6，結束陽極化成處理。又，圖4之例，顯示於時刻t6結束陽極化成處理後，電解液B供給單元12為了準備次一處理而再度進行電解液B的濃度調整的場合，但是不以此為限。電解液B亦可被排液處理。
1.4 陽極化成處理後的半導體基板之表面狀態
其次，針對陽極化成處理後的半導體基板1000之表面狀態，用圖5進行說明。圖5之例，係陽極化成處理後的半導體基板1000的表面及剖面之圖。
如圖5所示，藉由使用本實施型態之陽極處理裝置1，於半導體基板100之表面(被陽極化成處理之面)，被同心狀地形成具有不同特性之多孔質層(例如多孔質矽層)。
更具體地說，於半導體基板1000的表面中央部，被形成對應於上部電極106及處理槽103(電解液A)之多孔質層1100。此外，於半導體基板1000的表面外周部，被形成對應於上部電極104及處理槽101(電解液B)之多孔質層1200。多孔質層1100及1200，陽極化成處理條件不同。具體而言，作為陽極化成處理條件，例如被供給至上部電極104及106的電流量(上部電極104及106的單位面積之電流量)，及/或電解液A及B的濃度等為不同。藉此，陽極處理裝置1，可以形成膜質(機械強度)不同的多孔質層1100與1200。多孔質層1100與1200，例如在硬度、多孔性的平均粒度、密度、層的厚度等任一為不同。例如，多孔質層1100的硬度，可比多孔質層1200還高，或者還低。例如，硬度可以藉由維氏硬度計來測定。平均粒徑可藉由氣體吸附法來測定。
1.5 使用進行了陽極化成處理的半導體基板之半導體裝置之製造方法之具體例
其次，針對使用進行了陽極化成處理的半導體基板1000之半導體裝置之製造方法的具體例，用圖6進行說明。圖6係顯示半導體基板的貼合方法之一例之流程圖。作為半導體裝置之製造方法之一，有貼合被形成元件層1的第1(半導體)基板，與被形成元件層2的第2(半導體)基板而形成半導體裝置之方法。於元件層1及2，例如設有包含電晶體等元件的各種電路。在此場合，貼合第1基板與第2基板，亦即貼合元件層1與元件層2後，除去第1基板。在圖6之例，針對第1基板具有使用相關於本實施型態之陽極處理裝置1形成的多孔質層之半導體基板的場合進行說明。
如圖6所示，首先使用本實施型態之陽極處理裝置1，進行第1基板1000a的陽極化成處理，於表面形成多孔質層1100及1200(a)。
接著，於第1基板之被形成多孔質層1100及1200的面形成元件層1(b)。此外，於第2基板1000b形成元件層2(c)。
其次，以元件層1與元件層2相對向，相互導電連接的方式，貼合第1基板1000a與第2基板1000b(d)。
其次，把多孔質層1100及1200作為剝離層，剝離第1基板1000a與元件層1(第2基板1000b)(e)。剝離的第1基板1000a，研磨表面，除去殘存的多孔質層1100及1200(f)。藉此，被表面研磨的第1基板1000a可以再利用。
其次，除去第2基板表面之多孔質層1100及1200(g)。藉此，形成設置了元件層1及2的第2基板1000b。
在此，多孔質層1100及1200，具有在元件層1的製造步驟，以及第1基板1000a與第2基板1000b之貼合步驟(d)，不會發生多孔質層由第1基板1000a剝離或多孔質層破斷之硬度。進而，多孔質層1100及1200，具有在第1基板1000a與第2基板1000b之剝離步驟(e)，作為剝離層發揮機能之硬度。例如，為了在元件層1的製造步驟及貼合步驟不發生剝離，以多孔質層1200(外周部)的硬度，比多孔質層1100 (中央部)的硬度更高為佳。
1.6 相關於本實施型態之效果
例如，於半導體裝置之製造方法之一之半導體基板的貼合法，使用不具有多孔質層的半導體基板的場合，半導體基板的機械強度高，所以半導體基板與形成於其上的元件層之間的剝離是困難的。亦即，不要的半導體基板，多半為藉由研削等除去的場合。在此場合，藉由研削除去的半導體基板，被廢棄而無法再利用。此外，半導體基板與元件層之間設有單一層之多孔質層的場合，多孔質層的機械強度低，所以在元件層的製造步驟，或者半導體基板之貼合步驟，發生多孔質層的剝離或破斷的可能性很高。
對此，相關於本實施型態的構成的話，陽極處理裝置1，可以對半導體基板表面的中央部與外周部供給濃度不同的電解液A及B。此外，陽極處理裝置1，具有分別對應於半導體基板表面的中央部與外周部的2個上部電極106及104，可以分別供給不同的電流量。亦即，陽極處理裝置1，可以在半導體基板表面的中央部與外周部形成膜質不同的多孔質層1100及1200。
使用本實施型態的陽極處理裝置1，藉由在半導體基板表面的中央部與外周部形成膜質不同的多孔質層1100及1200，例如，可以形成作為半導體基板之貼合法中，在元件層的製造步驟，或半導體基板的貼合步驟不會發生剝離，於半導體基板的剝離步驟作為剝離層發揮機能之多孔質層1100及1200。藉此，可以再利用在多孔質層的位置分離的半導體基板。
2. 第2實施型態
其次，說明第2實施型態。在第2實施型態，針對與第1實施型態不同的陽極處理裝置1的構成，顯示3個例子。以下，以與第1實施型態不同之處為中心進行說明。
2.1 第1例
首先，說明相關於第1例的陽極處理裝置1。在第1例，說明陽極化成處理部10的上部電極未被分割的場合。第1例之陽極處理裝置1的全體構成，與第1實施型態的圖1相同。
其次，針對陽極化成處理部10的詳細構成之一例，用圖7及圖8進行說明。圖7係陽極化成處理部10之立體圖。圖8係被供給電解液A及B的狀態之陽極化成處理部10之剖面圖。圖7及圖8之例，顯示陽極化成處理部10，包含被連接於1個電流源的1個上部電極，與2個處理槽的場合。以下，亦將本構成標記為「同一電極/單一電源/分割處理槽」。
如圖7及圖8所示，陽極化成處理部10，包含處理槽101及103、水盤102、上部電極104、下部電極107、及保持部108。亦即，本例之陽極化成處理部10，對第1實施型態的圖2及圖3，為上部電極未被分割的構成。
上部電極104，於使用處理槽101及103之陽極化成處理作為陽極發揮機能。亦即，上部電極104對向於處理槽101及103。上部電極104的外徑，與處理槽101的外徑大致相同。亦即，上部電極104的外徑，與半導體基板1000大致相同。上部電極104上面的高度位置，比水盤102的上端還高。
在本實施型態，電流供給部13包含電流源40。電流源40，被連接於上部電極104及下部電極107，陽極化成處理時對上部電極104供給任意的電流。
其他構成，亦即關於處理槽101及103、水盤102等的構成，與第1實施型態的圖2及圖3相同。
2.2 第2例
其次，說明相關於第2例的陽極處理裝置1。在第2例，說明陽極化成處理部10的處理槽103被省略的場合。
首先，針對陽極處理裝置1的全體構成之一例用圖9進行說明。圖9係陽極處理裝置1之方塊圖。
如圖9所示，在本例之陽極處理裝置1，省略電解液B供給單元12。接著，與第1實施型態的圖1之電解液B供給單元12同樣，電解液A供給單元11，於電解液A混合槽20與陽極化成處理部10具有使電解液A循環的循環機構。更具體地說，於電解液A混合槽20，可以混合透過配管16由陽極化成處理部10回收的液體，與3種液體A～C，進行電解液A的產生及濃度調整。產生的電解液A，通過配管15供給至陽極化成處理部10。此外，電解液A混合槽20，具有在槽內的液體溢流的場合等供進行排液處理之用的溢流管。又，電解液A供給單元11，亦可不具有電解液A的循環機構。亦即，亦可為與第1實施型態的圖1相同的構成。
其次，針對陽極化成處理部10的詳細構成之一例，用圖10及圖11進行說明。圖10係陽極化成處理部10之立體圖。圖11係被供給電解液A的狀態之陽極化成處理部10之剖面圖。圖10及圖11之例，顯示陽極化成處理部10，包含被連接於1個電流源的2個上部電極104及106，與1個處理槽101的場合。以下，亦將本構成標記為「分割電極/單一電源/同一處理槽」。
如圖10及圖11所示，陽極化成處理部10，包含處理槽101、水盤102、上部電極104及106、絕緣體105、下部電極107、及保持部108。亦即，本例之陽極化成處理部10，對第1實施型態的圖2及圖3，為處理槽103被省略的構成。此外，在本例，被連接於處理槽103的配管17及19也被省略。
上部電極104，於陽極化成處理作為形成多孔質層1200時的陽極發揮機能。上部電極106，於陽極化成處理作為形成多孔質層1100時的陽極發揮機能。
在本例，上部電極104透過開關SW1被連接於電流源40。此外，上部電極106透過開關SW2被連接於電流源40。
如圖11所示，在本例，處理槽103被省略，所以沒有間隙GP2。陽極化成處理時，配管18為關閉狀態。因此，處理槽101的剩餘的電解液A，通過間隙GP1，流入水盤102。
其他構成，亦即關於處理槽101、水盤102、以及上部電極104及106等的構成，與第1實施型態的圖2及圖3相同。
2.3 第3例
其次，說明相關於第3例的陽極處理裝置1。在第3例，與第2實施型態之第2例不同，針對分別於上部電極104及106設電流源的場合進行說明。第3例之陽極處理裝置1的全體構成，與第2實施型態的第2例之圖9相同。
其次，針對陽極化成處理部10的詳細構成之一例，用圖12及圖13進行說明。圖12係陽極化成處理部10之立體圖。圖13係被供給電解液A的狀態之陽極化成處理部10之剖面圖。圖12及圖13之例，顯示陽極化成處理部10，包含被連接分別不同的電流源的2個上部電極與1個處理槽的場合。以下，亦將本構成標記為「分割電極/複數電源/同一處理槽」。
如圖12及圖13所示，陽極化成處理部10的構成，與第2實施型態的第2例之圖10及圖11相同。
在本例，與第1實施型態的圖2及圖3相同，上部電極104被連接於電流源40。此外，上部電極106被連接於電流源41。
2.4 相關於本實施型態之效果
根據相關於本實施型態的構成的話，可得到與第1實施型態同樣的效果。
3. 第3實施型態
其次，說明第3實施型態。第3實施型態，針對使用陽極處理裝置1之陽極化成處理的方法顯示6個例子。以下，以與第1及第2實施型態不同之處為中心進行說明。
3.1 第1例
首先，針對相關於第1例的陽極化成處理的方法，使用圖14進行說明。圖14係顯示相關於第1例的陽極化成處理的方法之方塊圖。在第1例，針對使用在第1實施型態或第2實施型態的第1例所說明的陽極處理裝置1，在不同的時間點形成多孔質層1100與多孔質層1200的場合之一例進行說明。
如圖14所示，被搬入陽極處理裝置1內的半導體基板1000，藉由保持部108固定(步驟S10)。
接著，電解液A供給單元11，產生電解液A，供給至處理槽103(步驟S11)。
其次，控制電路14，實行半導體基板1000的中央部的陽極化成處理(步驟S12)。亦即，控制電路14，形成為多孔質層1100。更具體地說，例如，相關於第1實施型態的陽極處理裝置1的場合，電流由電流源41供給至上部電極106，實行陽極化成處理。此外，例如，相關於第2實施型態的第1例之陽極處理裝置1的場合，電流由電流源40供給至上部電極104。此時，電解液B未被供給至處理槽101。因此，多孔質層1100被形成，未被形成多孔質層1200。
接著，控制電路14，透過配管19由處理槽103排出電解液A(步驟S13)。
接著，電解液B供給單元12，產生電解液B，供給至處理槽101(步驟S14)。
接著，控制電路14，實行半導體基板1000的外周部的陽極化成處理(步驟S15)。亦即，控制電路14，形成為多孔質層1200。更具體地說，例如，相關於第1實施型態的陽極處理裝置1的場合，電流由電流源40供給至上部電極104，實行陽極化成處理。此外，例如，相關於第2實施型態的第1例之陽極處理裝置1的場合，電流由電流源40供給至上部電極104。此時，電解液A未被供給至處理槽103。因此，被形成多孔質層1200，多孔質層1100未被形成。
接著，控制電路14，透過配管18由處理槽101排出電解液B(步驟S16)。
半導體基板1000由陽極處理裝置1搬出，結束陽極化成處理(步驟S17)。
又，在本例，係針對形成多孔質層1100之後形成多孔質層1200的場合進行說明，但形成多孔質層1200之後形成多孔質層1100亦可。
3.2 第2例
接著，針對相關於第2例的陽極化成處理的方法，使用圖15進行說明。圖15係顯示相關於第2例的陽極化成處理的方法之方塊圖。在第2例，針對使用在第1實施型態或第2實施型態的第1例所說明的陽極處理裝置1，統括形成多孔質層1100與多孔質層1200的場合之一例進行說明。
如圖15所示，被搬入陽極處理裝置1內的半導體基板1000，藉由保持部108固定(步驟S10)。
接著，電解液A供給單元11，產生電解液A，供給至處理槽103。此外，電解液B供給單元12，產生電解液B，供給至處理槽101(步驟S21)。
接著，控制電路14，實行半導體基板1000的陽極化成處理(步驟S22)。亦即，控制電路14，形成為多孔質層1100及1200。更具體地說，例如，相關於第1實施型態的陽極處理裝置1的場合，電流源40將電流供給至上部電極104，電流源41將電流供給至上部電極106。此外，例如，相關於第2實施型態的第1例之陽極處理裝置1的場合，電流由電流源40供給至上部電極104。藉此，多孔質層1100與多孔質層1200被統括形成。
接著，控制電路14，透過配管19由處理槽103排出電解液A。接著，控制電路14，透過配管18由處理槽101排出電解液B(步驟S23)。
半導體基板1000由陽極處理裝置1搬出，結束陽極化成處理(步驟S17)。
3.3 第3例
接著，針對相關於第3例的陽極化成處理的方法，使用圖16進行說明。圖16係顯示相關於第3例的陽極化成處理的方法之方塊圖。在第3例，針對使用在第2實施型態的第2例所說明的陽極處理裝置1，在不同的時間點形成多孔質層1100與多孔質層1200的場合之一例進行說明。
如圖16所示，被搬入陽極處理裝置1內的半導體基板1000，藉由保持部108固定(步驟S10)。
接著，電解液A供給單元11，產生電解液A，供給至處理槽101(步驟S31)。
接著，控制電路14，使開關SW1及SW2之一方為打開狀態，實行陽極化成處理(步驟S32)。控制電路14使開關SW2為打開狀態的場合，電流由電流源40供給至上部電極106，形成多孔質層1100。或者是，控制電路14使開關SW1為打開狀態的場合，電流由電流源40供給至上部電極104，形成多孔質層1200。
接著，控制電路14，使在步驟S32未成為打開狀態的開關SW1及SW2之另一方為打開狀態，實行陽極化成處理(步驟S33)。藉此，形成在步驟S32未被形成的多孔質層1100或多孔質層1200之某一。
其次，控制電路14，透過配管18由處理槽101排出電解液A(步驟S34)。
半導體基板1000由陽極處理裝置1搬出，結束陽極化成處理(步驟S17)。
又，在本例，多孔質層1100及多孔質層1200的形成順序可以任意設定。
3.4 第4例
接著，針對相關於第4例的陽極化成處理的方法，使用圖17進行說明。圖17係顯示相關於第4例的陽極化成處理的方法之方塊圖。在第4例，針對使用在第2實施型態的第3例所說明的陽極處理裝置1，在不同的時間點形成多孔質層1100與多孔質層1200的場合之一例進行說明。
如圖17所示，被搬入陽極處理裝置1內的半導體基板1000，藉由保持部108固定(步驟S10)。
接著，電解液A供給單元11，產生電解液A，供給至處理槽101(步驟S41)。
接著，控制電路14，由電流源40及41之一方供給電流至對應的上部電極，對半導體基板1000的中央部外周部之一方實行陽極化成處理(步驟S42)。在電流由電流源41供給至上部電極106的場合，形成多孔質層1100。或者是，在電流由電流源40供給至上部電極104的場合，形成多孔質層1200。
接著，控制電路14，由在步驟S42未使用的電流源40及41之另一方供給電流至對應的上部電極，對半導體基板1000的中央部外周部之另一方實行陽極化成處理(步驟S43)。藉此，形成在步驟S42未被形成的多孔質層1100或多孔質層1200之某一。
其次，控制電路14，透過配管18由處理槽101排出電解液A(步驟S44)。
半導體基板1000由陽極處理裝置1搬出，結束陽極化成處理(步驟S17)。
又，在本例，多孔質層1100及多孔質層1200的形成順序可以任意設定。
3.5 第5例
接著，針對相關於第5例的陽極化成處理的方法，使用圖18進行說明。圖18係顯示相關於第5例的陽極化成處理的方法之方塊圖。在第5例，針對使用在第2實施型態的第3例所說明的陽極處理裝置1，統括形成多孔質層1100與多孔質層1200的場合之一例進行說明。
如圖18所示，被搬入陽極處理裝置1內的半導體基板1000，藉由保持部108固定(步驟S10)。
接著，電解液A供給單元11，產生電解液A，供給至處理槽101(步驟S51)。
接著，控制電路14，由電流源40及41將大小不同的電流供給至對應的上部電極104及106，實行陽極化成處理(步驟S52)。藉此，多孔質層1100與多孔質層1200被統括形成。
其次，控制電路14，透過配管18由處理槽101排出電解液A(步驟S53)。
半導體基板1000由陽極處理裝置1搬出，結束陽極化成處理(步驟S17)。
3.6 第6例
接著，針對相關於第6例的陽極化成處理的方法，使用圖19進行說明。圖19係顯示相關於第6例的陽極化成處理的方法之方塊圖。在第6例，針對使用在第1實施型態的所說明的陽極處理裝置1，統括形成多孔質層1100與多孔質層1200的場合之一例進行說明。
如圖19所示，被搬入陽極處理裝置1內的半導體基板1000，藉由保持部108固定(步驟S10)。
接著，電解液B供給單元12，產生電解液B，供給至處理槽101。此外，電解液A供給單元11，產生與電解液B濃度不同的電解液A，供給至處理槽103(步驟S61)。
接著，控制電路14，由電流源40及41將大小不同的電流供給至對應的上部電極104及106，實行陽極化成處理(步驟S62)。亦即，在本例，控制電路14，以電解液濃度及電流量不同的條件，實行陽極化成處理。藉此，多孔質層1100與多孔質層1200被統括形成。
接著，控制電路14，透過配管19由處理槽103排出電解液A。接著，控制電路14，透過配管18由處理槽101排出電解液B(步驟S63)。
半導體基板1000由陽極處理裝置1搬出，結束陽極化成處理(步驟S17)。
3.7 相關於本實施型態之效果
可以將本實施型態之第1例～第6例，以在第1及第2實施型態說明的陽極處理裝置1來實行。
4. 第4實施型態
接著，說明第4實施型態。在第4實施型態，針對與第1實施型態不同的電解液A供給單元11及電解液B供給單元12的構成，說明4個例子。以下，以與第1至第3實施型態不同之處為中心進行說明。
4.1 第1例
首先，針對相關於第1例的陽極處理裝置1，用圖20進行說明。圖20係陽極處理裝置1之方塊圖。在第1例，與第1實施型態不同，針對電解液B供給單元12不具有電解液B的循環機構的場合進行說明。
如圖20所示，本例之陽極處理裝置1，包含：陽極化成處理部10、電解液A供給單元11、電解液B供給單元12、電流供給部13、控制電路14、及濃度感測器50。
電解液A供給單元11之構成，與第1實施型態的圖1之電解液A供給單元11相同。
電解液B供給單元12，與電解液A供給單元11相同，不具有循環機構，把未使用的電解液B供給至陽極化成處理部10。亦即，電解液B供給單元12，於電解液B混合槽30，混合3種液體D～F產生電解液B。
配管16，未被連接於電解液B混合槽30，在陽極化成處理部10使用的液體(亦即，由水盤102回收的回收液)作為排放液體排出。
濃度感測器50，監測配管16之排放液體(電解液A與電解液B之混合液)的濃度，將其結果傳送至控制電路14。例如，在本例之陽極處理裝置1，於每次陽極化成處理，反覆進行電解液A及B之新液供給與排液處理。但是，由濃度感測器50之排液的濃度監測結果，在判斷處理槽101及103內的電解液A及B，於次一陽極化成處理可以再利用的場合，可以再利用處理槽101及103的電解液A及B之全部或者一部分。再利用一部分的場合，不足的部分之電解液A及B分別由電解液A供給單元11及電解液B供給單元12供給。
4.2 第2例
其次，針對相關於第2例的陽極處理裝置1，用圖21進行說明。圖21係陽極處理裝置1之方塊圖。在第2例，針對電解液A供給單元11及電解液B供給單元12具有電解液的循環機構的場合進行說明。
如圖21所示，本例之陽極處理裝置1，包含：陽極化成處理部10、電解液A供給單元11、電解液B供給單元12、電流供給部13及控制電路14。
電解液B供給單元12之構成，與第1實施型態的圖1之電解液B供給單元12相同。總之，電解液B由處理槽101透過配管16回收。
電解液A供給單元11，與電解液B供給單元12同樣，可以透過配管16，進行由陽極化成處理部10內的水盤102回收的液體(電解液A與電解液B之混合液)的成分調整，再度供給至陽極化成處理部10的處理槽103。
4.3 第3例
其次，針對相關於第3例的陽極處理裝置1，用圖22進行說明。圖22係陽極處理裝置1之方塊圖。在第3例，與第2例不同，針對電解液A供給單元11由處理槽103透過配管19回收電解液A的場合進行說明。
如圖22所示，本例之陽極處理裝置1，包含：陽極化成處理部10、電解液A供給單元11、電解液B供給單元12、電流供給部13及控制電路14。
本例之電解液A供給單元11的電解液A混合槽20，通過配管19與陽極化成處理部10的處理槽103連接。亦即，電解液A供給單元11，可以進行由處理槽103回收的電解液A的成分調整，再度供給至陽極化成處理部10的處理槽103。其他的構成，與第4實施型態的第2例之圖21相同。
4.4 第4例
其次，針對相關於第4例的陽極處理裝置1，用圖23進行說明。圖23係陽極處理裝置1之方塊圖。在第4例，與第1實施型態不同，針對電解液A供給單元11具有循環機構，電解液B供給單元12不具有循環機構的場合進行說明。
如圖23所示，本例之陽極處理裝置1，包含：陽極化成處理部10、電解液A供給單元11、電解液B供給單元12、電流供給部13及控制電路14。
本例之電解液A供給單元11的電解液A混合槽20，與第4實施型態之第2例的圖21同樣，可以透過配管16，進行由陽極化成處理部10內的水盤102回收的液體(電解液A與電解液B之混合液)的成分調整，再度供給至陽極化成處理部10的處理槽103。
電解液B供給單元12，與第4實施型態的第1例之圖20相同，不具有循環機構，把未使用的電解液B供給至陽極化成處理部10。亦即，電解液B供給單元12，於電解液B混合槽30，混合3種液體D～F產生電解液B。
4.5 相關於本實施型態之效果
根據相關於本實施型態的構成的話，可得到與第1至第3實施型態同樣的效果。
又，可以將第2實施型態之第1例及第2例所說明的陽極化成處理部10適用於本實施型態之第1至第4例。此外，第3實施型態之第1例、第2例及第6例所說明的陽極化成處理方法能夠以本實施型態之第1至第4例來實行。
5. 第5實施型態
其次，說明第5實施型態。第5實施型態，針對與第1至第4實施型態不同的陽極處理裝置1的構成，顯示4個例子。本實施型態之陽極處理裝置1，具有供對上部電極與半導體基板1000的上面(未被陽極化成處理之面)之間供給電解液之用的機構。以下，以與第1至第4實施型態不同之處為中心進行說明。
5.1 第1例
5.1.1 全體構成
首先，針對第1例之陽極處理裝置1的全體構成用圖24進行說明。圖24係陽極處理裝置之方塊圖。又，本實施型態之電解液A供給單元11及電解液B供給單元12，與第1實施型態相同。因此，在圖24之例，針對電解液A供給單元11及電解液B供給單元12的構成要素的詳細內容予以省略。
如圖24所示，陽極處理裝置1，包含：陽極化成處理部10、電解液A供給單元11、電解液B供給單元12、電解液C供給單元61、電流供給部13及控制電路14。
陽極化成處理部10，包含複數處理槽及複數的電極，進行半導體基板表面的陽極化成處理。針對陽極化成處理部10的構成敘述於後。
電解液A供給單元11、電解液B供給單元12及電流供給部13，與第1實施型態的圖1相同。
電解液C供給單元61，對設於陽極化成處理部10內的上部電極與半導體基板1000的上面(未被陽極化成處理之面)之間的處理槽供給電解液C。又，電解液C供給單元61，具有供調整供給至處理槽的電解液C的液壓之用的未圖示的機構(例如泵等)。電解液C，例如使用在陽極化成處理時，與半導體基板1000幾乎不反應(不溶解矽)的溶液。又，為了抑制半導體基板1000的金屬污染，電解液C以不含金屬元素者為佳。本實施型態之電解液C供給單元61，於陽極化成處理部10與電解液C混合槽70具有使電解液C循環的機能。亦即，電解液C供給單元61，可以進行由陽極化成處理部10透過配管64回收的液體之成分調整，再度供給至陽極化成處理部10。
電解液C供給單元61，包含：電解液C混合槽70、供給控制部71、複數之液體供給部72(在圖24之例，為3個液體供給部72a～72c)及濃度感測器73。
電解液C混合槽70，是供混合複數液體產生電解液C之槽。電解液C供給單元61，例如，混合作為原料之3種液體G～I產生電解液C。又，用於電解液C的產生之液體不限於3種。此外，於電解液C的產生亦可使用液體以外的材料。例如，電解液C，亦可為在陽極化成處理時，幾乎與半導體基板1000不反應的稀釋HF水溶液，亦可為稀釋HCl水溶液，亦可為非水溶性有機電解液。例如，電解液C的原料，亦可選擇非水溶性電解液之乙腈(acetonitrile)，碳酸丙烯酯(propylene carbonate)，或者二甲基甲醯胺(dimethylformamide)之至少任一。此外，電解液C的原料，亦可選擇成為氟化物源的無水HF(anhydrous HF)、四氟硼酸鹽(tetrafluoroborate)、或者氟硼酸鋰(lithium fluoroborate)之中的至少任一。產生的電解液C，通過配管63供給至陽極化成處理部10內的處理槽。此外，電解液C混合槽70，具有在槽內的液體溢流的場合等供進行排液處理之用的溢流管。
供給控制部71，藉由控制電路14的控制，控制供給至電解液C混合槽70的液體G～I的供給量。例如，供給控制部71，包含設於各液體的供給線之閥及流量計。
液體供給部72a～72c，藉由供給線(配管)，分別與電解液C混合槽70連接。液體供給部72a～72c，透過供給線，分別把液體G～I供給至電解液C混合槽70。液體供給部72a～72c，例如，亦可分別具有由液體G～I的容器壓送液體G～I之用的機構。
濃度感測器73，監測電解液C混合槽70內的電解液C的濃度，將其結果傳送至控制電路14。控制電路14，根據濃度監測的結果，控制供給控制部71，調整電解液C的濃度。又，濃度感測器73，亦可測定電解液C的電阻值。
控制電路14，控制陽極處理裝置1的全體。更具體地說，控制電路14，控制：陽極化成處理部10、電解液A供給單元11、電解液B供給單元12、電解液C供給單元61及電流供給部13。
5.1.2 陽極化成處理部的詳細構成
其次，針對陽極化成處理部10的詳細構成之一例，用圖25進行說明。圖25係被供給電解液A～C的狀態之陽極化成處理部10之剖面圖。圖25之例，與第1實施型態同樣，顯示陽極處理裝置1為「分割電極/複數電源/分割處理槽」的構成的場合。
如圖25所示，陽極化成處理部10，包含處理槽101、103及111、水盤102、上部電極104及106、絕緣體105、下部電極107、及保持部108。處理槽101及103、水盤102、上部電極104及106、絕緣體105、以及下部電極107的構成，與第1實施型態的圖2相同。與第1實施型態相同，於上部電極104被連接電流源40。於上部電極106被連接電流源41。
處理槽111，例如具有圓筒形狀。處理槽111之上端位於上部電極104及106的下面。陽極化成處理時，處理槽111的下端，位於半導體基板1000的上面(未被陽極化成處理之面)。處理槽111的外周為保持部108的側面所包圍。亦即，上部電極104及106的下面與半導體基板1000的上面與保持部108的側面所包圍的區域相當於處理槽111。換句話說，處理槽111，設於上部電極104及106、與處理槽101及103之間。於處理槽111，被連接著配管63及64。配管63，係往處理槽111之液體供給線。配管64，係來自處理槽111之液體排出線。在本實施型態，配管63被連接於電解液C混合槽70的液體供給線。配管64被連接於電解液C混合槽70的液體回收線。又，配管63及64分別設複數個亦可。進而，於處理槽111，亦可被連接把處理槽111內的液體作為廢液排出時使用的廢液排出用的配管。
本實施型態之保持部108例如具有圓筒形狀。上部電極104接於保持部108的上端附近的內面。在第1及第2實施型態之例，於保持部108的下端，設有接於半導體基板1000的下面的L字形的鉤部。在此場合，半導體基板000，藉由上部電極與鉤部夾住而固定。對此，在本例，接於半導體基板000的下面的鉤部被省略。保持部108，包含固定部113。固定部113設於保持部108的側面。陽極化成處理時，藉由電解液A及B的液壓，使半導體基板1000由下側推抵於固定部113。保持部108及固定部113，以對電解液C具有耐性的絕緣材料構成。例如，於保持部108及固定部113，為了改善與半導體基板1000之密接性，亦可使用彈性材料。又，固定部113的剖面形狀為任意。例如，固定部113的剖面形狀也可以是半圓形，也可以是矩形狀。
在本實施型態，電解液A及B的液壓，設定為比電解液C的液壓還高。因此，陽極化成處理時，藉由電解液A及B的液壓，半導體基板1000的上面被推抵於固定部113。
半導體基板1000的下面(被陽極化成處理之面)與下部電極107之間，未設固定部113。換句話說，半導體基板1000的下面，不與保持部108相接。因此，陽極化成處理時，於半導體基板1000的下面外周，不設未被陽極化成處理的區域(以下，亦標記為「邊緣切除區域」)。因此，於半導體基板000的下側的面之全面被形成多孔質層1100及1200。
5.1.3 接觸部的構成
其次，針對固定部113的構成之一例，用圖26進行說明。圖26係固定部113之俯視圖。
如圖26所示，本實施型態之固定部113，具有環形狀。陽極化成處理時，半導體基板1000的上面外周(邊緣)全體與固定部113相接。藉此，抑制液體由處理槽101往處理槽111滲出。
5.2 第2例
其次，說明第2例。在第2例，針對與第1例不同的陽極化成處理部10的構成，用圖27進行說明。圖27係被供給電解液A～C的狀態之陽極化成處理部10之剖面圖。圖27之例，與第2實施型態之第1例同樣，顯示陽極處理裝置1為「同一電極/單一電源/分割處理槽」的構成的場合。
本例之陽極處理裝置1的全體構成，與第5實施型態的第1例之圖24相同。
如圖27所示，陽極化成處理部10，包含處理槽101、103及111、水盤102、上部電極104、下部電極107、及保持部108。
處理槽101及103、水盤102、上部電極104及下部電極107，與第2實施型態的第1例之圖8相同。與第2實施型態的第1例相同，於上部電極104被連接電流供給部13(電流源40)。
在本例，上部電極104的下面與半導體基板1000的上面與保持部108的側面所包圍的區域相當於處理槽111。換句話說，處理槽111，設於上部電極104、與處理槽101及103之間。
5.3 第3例
其次，說明第3例。在第3例，針對與第1例及第2例不同的陽極處理裝置1的構成，用圖28及圖29進行說明。圖28係陽極處理裝置之方塊圖。圖29係被供給電解液A及C的狀態之陽極化成處理部10之剖面圖。圖29之例，與第2實施型態之第2例同樣，顯示陽極處理裝置1為「分割電極/單一電源/同一處理槽」的構成的場合。
如圖28所示，本例之陽極處理裝置1，是由第5實施型態的第1例之構成(圖24)，省略電解液B供給單元12、以及配管16及17的構成。電解液A供給單元11的電解液A混合槽20，通過配管15連接於陽極化成處理部10內的處理槽101。
如圖29所示，陽極化成處理部10，包含處理槽101及111、水盤102、上部電極104及106、絕緣體105、下部電極107、及保持部108。
處理槽101、水盤102、上部電極104及106、絕緣體105、以及下部電極107，與第2實施型態第2例的圖11相同。與第2實施型態的第2例同樣，在本例，上部電極104透過開關SW1被連接於電流源40。此外，上部電極106透過開關SW2被連接於電流源40。
在本例，上部電極104及106的下面與半導體基板1000的上面與保持部108的側面所包圍的區域相當於處理槽111。換句話說，處理槽111，設於上部電極104及106、與處理槽101之間。
5.4 第4例
其次，說明第4例。在第4例，針對與第3例不同的陽極化成處理部10的構成，用圖30進行說明。圖30係被供給電解液A～C的狀態之陽極化成處理部10之剖面圖。圖30之例，與第2實施型態之第3例同樣，顯示陽極處理裝置1為「分割電極/複數電源/同一處理槽」的構成的場合。
本例之陽極處理裝置1的全體構成，與第5實施型態的第3例之圖28相同。
如圖30所示，陽極化成處理部10，包含處理槽101及111、水盤102、上部電極104及106、絕緣體105、下部電極107、及保持部108。
處理槽101、水盤102、上部電極104及106、絕緣體105、以及下部電極107，與第2實施型態第3例的圖13相同。與第2實施型態的第3例相同，於上部電極104被連接電流源40。於上部電極106被連接電流源41。
處理槽111的構成，與第5實施型態的第3例之圖29相同。
5.5 相關於本實施型態之效果
根據相關於本實施型態的構成的話，可得到與第1至第4實施型態同樣的效果。
進而，若是相關於本實施型態的構成，陽極處理裝置，可以對上部電極與半導體基板之間供給電解液。藉此，可以抑制上部電極與半導體基板之接觸面積。亦即，可以減低上部電極導致半導體基板的金屬污染。
進而，若是相關於本實施型態的構成，藉由對上部電極與半導體基板之間供給電解液，可以抑制上部電極與半導體基板之間的導通不良。
6. 第6實施型態
其次，說明第6實施型態。在第6實施型態，針對與第5實施型態的第1例不同的電解液C供給單元61的構成進行說明。
6.1 全體構成
針對陽極處理裝置1的全體構成用圖31進行說明。圖31係陽極處理裝置1之方塊圖。
如圖31所示，本例之陽極處理裝置1，包含：陽極化成處理部10、電解液A供給單元11、電解液B供給單元12、電解液C供給單元61、電流供給部13、控制電路14、以及濃度感測器91。
陽極化成處理部10、電解液A供給單元11、電解液B供給單元12、電流供給部13、及控制電路14，與第5實施型態的第1例之圖24相同。
電解液C供給單元61，不具有循環機構，把未使用的電解液C供給至陽極化成處理部10。亦即，電解液C供給單元61，於電解液C混合槽70，混合3種液體G～I產生電解液C。
配管64，未被連接於電解液C混合槽70，在處理部111使用的液體作為廢液排出。
濃度感測器91，監測配管64之排放液體的濃度，將其結果傳送至控制電路14。例如，在本例之陽極處理裝置1，於每次陽極化成處理，反覆進行電解液C之新液供給與排液處理。但是，由濃度感測器91的監測結果，在判斷處理槽111內的電解液C，於次一陽極化成處理可以再利用的場合，陽極處理裝置1，可以再利用處理槽111的電解液C之全部或者一部分。再利用一部分的場合，不足的部分之電解液C由及電解液C供給單元61供給。
6.2 相關於本實施型態之效果
可將本實施型態適用於第5實施型態。
7. 第7實施型態
其次，說明第7實施型態。在第7實施型態，針對在上部電極與半導體基板上面之間被供給2種電解液的場合說明4個例子。以下，以與第5及第6實施型態不同之處為中心進行說明。
7.1 第1例
7.1.1 全體構成
首先，針對第1例之陽極處理裝置1的全體構成用圖32進行說明。圖32係陽極處理裝置之方塊圖。又，在圖32之例，針對電解液A供給單元11及電解液B供給單元12的構成要素的詳細內容予以省略。
如圖32所示，陽極處理裝置1，包含：陽極化成處理部10、電解液A供給單元11、電解液B供給單元12、電解液C供給單元61、電解液D供給單元62、電流供給部13及控制電路14。
陽極化成處理部10，在上部電極與半導體基板1000之間具有2個處理槽。針對陽極化成處理部10的詳細內容敘述於後。
電解液A供給單元11、電解液B供給單元12及電流供給部13，與第1實施型態的圖1相同。
電解液C供給單元61的構成，與第5實施型態的第1例之圖24相同。電解液C混合槽70，通過配管65及66連接於陽極化成處理部10。亦即，電解液C供給單元61，透過配管65供給電解液C至陽極化成處理部10，透過配管66由陽極化成處理部10回收液體。
電解液D供給單元62，對設於陽極化成處理部10內的上部電極與半導體基板1000的上面(未被陽極化成處理之面)之間的處理槽供給電解液D。又，電解液D供給單元62，具有供調整供給至處理槽的電解液D的液壓之用的未圖示的機構(例如泵等)。電解液D，例如使用在陽極化成處理時，與半導體基板1000幾乎不反應矽的溶液。又，為了抑制半導體基板1000的金屬污染，電解液D以不含金屬元素者為佳。電解液D亦可與電解液C相同，亦可不同。以下，針對電解液D，係與電解液C濃度(電阻值)不同的場合進行說明。以下，電解液D的電阻值可比電解液C的電阻值還高，亦可更低。考慮上部電極104及106的材質，電解液A～D的組合對陽極化成處理的效果(對電場的影響)等，調整電解液C及D的電阻值。本實施型態之電解液D供給單元62，於陽極化成處理部10與電解液D混合槽80具有使電解液D循環的機能。亦即，電解液D供給單元62，可以進行由陽極化成處理部10回收的液體之成分調整，再度供給至陽極化成處理部10。
電解液D供給單元62，包含：電解液D混合槽80、供給控制部81、複數之液體供給部82(在圖24之例，為3個液體供給部82a～82c)及濃度感測器83。
電解液D混合槽80，是供混合複數液體產生電解液D之槽。電解液D供給單元62，作為原料，可以混合透過配管64由陽極化成處理部10回收的液體，與3種液體J～L，進行電解液D的產生及濃度調整。又，用於電解液D的產生之液體不限於3種。此外，於電解液D的產生亦可使用液體以外的材料。與電解液C同樣，例如，電解液D，亦可為在陽極化成處理時幾乎與半導體基板1000不反應的稀釋HF水溶液，亦可為稀釋HCl水溶液，亦可為非水溶性有機電解液。例如，電解液D的原料，亦可選擇非水溶性電解液之乙腈(acetonitrile)，碳酸丙烯酯(propylene carbonate)，或者二甲基甲醯胺(dimethylformamide)之至少任一。此外，電解液D的原料，亦可選擇成為氟化物源的無水HF(anhydrous HF)、四氟硼酸鹽(tetrafluoroborate)、或者氟硼酸鋰(lithium fluoroborate)之中的至少任一。產生的電解液D，通過配管63供給至陽極化成處理部10的處理槽之一。此外，電解液D混合槽80，具有在槽內的液體溢流的場合等供進行排液處理之用的溢流管。
供給控制部81，藉由控制電路14的控制，控制供給至電解液D混合槽80的液體J～L的供給量。例如，供給控制部81，包含設於各液體的供給線之閥及流量計。
液體供給部82a～82c，藉由供給線，分別與電解液D混合槽80連接。液體供給部82a～82c，透過供給線，分別把液體J～L供給至電解液D混合槽80。液體供給部82a～82c，例如，亦可分別具有由液體J～L的容器壓送液體J～L之用的機構。
濃度感測器83，監測電解液D混合槽80內的電解液D的濃度，將其結果傳送至控制電路14。控制電路14，根據濃度監測的結果，控制供給控制部81，調整電解液D的濃度。又，濃度感測器83，亦可測定電解液D的電阻值。
控制電路14，控制陽極處理裝置1的全體。更具體地說，控制電路14，控制：陽極化成處理部10、電解液A供給單元11、電解液B供給單元12、電解液C供給單元61、電解液D供給單元62、及電流供給部13。
7.1.2 陽極化成處理部的詳細構成
其次，針對陽極化成處理部10的詳細構成之一例，用圖33進行說明。圖33係被供給電解液A～D的狀態之陽極化成處理部10之剖面圖。圖33之例，與第1實施型態同樣，顯示陽極處理裝置1為「分割電極/複數電源/分割處理槽」的構成的場合。
如圖33所示，陽極化成處理部10，包含處理槽101、103、111、及112、水盤102、上部電極104及106、絕緣體105、下部電極107、及保持部108。處理槽101及103、水盤102、上部電極104及106、絕緣體105、以及下部電極107的構成，與第1實施型態的圖2相同。與第1實施型態相同，於上部電極104被連接電流源40。於上部電極106被連接電流源41。
在本例，處理槽111之上端位於上部電極104的下面。在上部電極104的下面與半導體基板1000的上面與保持部108的側面與處理槽112的側面所包圍的區域相當於處理槽111。換句話說，處理槽111，設於上部電極104、與處理槽101之間。
處理槽112，例如具有圓筒形狀。處理槽112，例如以與處理槽111成同心圓狀地被配置。處理槽112的內徑，比處理槽111的內徑還小。例如，處理槽112的內徑，與上部電極106大致相同。處理槽112，對應於多孔質層1100的形成。處理槽112之上端接於上部電極106的下面。處理槽112的下端，位於半導體基板1000上面附近，未接於半導體基板1000的上面。在上部電極106的下面與半導體基板1000的上面與處理槽112的側面所包圍的區域相當於處理槽112。換句話說，處理槽112，設於上部電極106、與處理槽103之間。處理槽112的下端與半導體基板1000之間，設有間隙GP3。處理槽112的側面，例如以對電解液C及D具有耐性的絕緣材料構成。又，處理槽112亦可為與保持部108相同的材料。於處理槽103，被連接著配管65及66。配管65，係往處理槽112之液體供給線。配管66，係來自處理槽112之液體排出線。在本實施型態，配管65被連接於電解液C混合槽70的液體供給線。配管66被連接於電解液C混合槽70的液體回收線。又，配管65及66亦可設複數個。進而，於處理槽112，亦可被連接把處理槽112內的液體作為廢液排出時使用的廢液排出用的配管。
在本實施型態，電解液A及B的液壓，設定為比電解液C及D的液壓還高(電解液A+B之液壓＞電解液C+D之液壓)。因此，陽極化成處理時，藉由電解液A及B的液壓，半導體基板1000的上面被推抵於固定部113。
此外，電解液C的液壓，設定為比電解液D的液壓還高(電解液C之液壓＞電解液D之液壓)。藉此，陽極化成處理時，通過間隙GP3，電解液C由處理槽112朝向處理槽111流入。例如，被供給電解液A～D的場合，電解液A～D的液壓，亦可為電解液A＞電解液B＞電解液C＞電解液D之關係。
7.2 第2例
其次，說明第2例。在第2例，針對與第1例不同的陽極化成處理部10的構成，用圖34進行說明。圖34係被供給電解液A～D的狀態之陽極化成處理部10之剖面圖。圖34之例，與第2實施型態之第1例同樣，顯示陽極處理裝置1為「同一電極/單一電源/分割處理槽」的構成的場合。
本例之陽極處理裝置1的全體構成，與第7實施型態的第1例之圖32相同。
如圖34所示，陽極化成處理部10，包含處理槽101、103、111、及112、水盤102、上部電極104、下部電極107、及保持部108。
處理槽101及103、水盤102、上部電極104及下部電極107，與第2實施型態的第1例之圖8相同。與第2實施型態的第1例相同，對上部電極104，電流由電流供給部13(電流源40)供給。
在本例，例如，處理槽111的內徑，與處理槽103的內徑大致相同。換句話說，處理槽111，設於上部電極104之與處理槽101對向的區域、與處理槽101之間。處理槽112，設於上部電極104之與處理槽103對向的區域、與處理槽103之間。
7.3 第3例
其次，說明第3例。在第3例，針對與第1例及第2例不同的陽極處理裝置1的構成，用圖35及圖36進行說明。圖35係陽極處理裝置之方塊圖。圖36係供給著電解液A、C、D的狀態之陽極化成處理部10之剖面圖。圖36之例，與第2實施型態之第2例同樣，顯示陽極處理裝置1為「分割電極/單一電源/同一處理槽」的構成的場合。
如圖35所示，本例之陽極處理裝置1，是由第7實施型態的第1例之構成(圖32)，省略電解液B供給單元12、以及配管16及17的構成。電解液A供給單元11的電解液A混合槽20，通過配管15連接於處理槽101。
如圖36所示，陽極化成處理部10，包含處理槽101、111及112、水盤102、上部電極104及106、絕緣體105、下部電極107、及保持部108。
處理槽101、水盤102、上部電極104及106、絕緣體105、以及下部電極107，與第2實施型態第2例的圖11相同。與第2實施型態的第2例同樣，在本例，上部電極104透過開關SW1被連接於電流源40。此外，上部電極106透過開關SW2被連接於電流源40。
在本例，處理槽111之上端位於上部電極104的下面。在上部電極104的下面與半導體基板1000的上面與保持部108的側面與處理槽112的側面所包圍的區域相當於處理槽111。此外，處理槽112之上端，位於上部電極106的下面。在上部電極106的下面與半導體基板1000的上面與處理槽112的側面所包圍的區域相當於處理槽112。換句話說，處理槽111，設於上部電極104，及處理槽101之與上部電極104對向的區域之間。處理槽112，設於上部電極106，及處理槽101之與上部電極106對向的區域之間。
7.4 第4例
其次，說明第4例。在第4例，針對與第3例不同的陽極化成處理部10的構成，用圖37進行說明。圖37係供給著電解液A、C、D的狀態之陽極化成處理部10之剖面圖。圖37之例，與第2實施型態之第3例同樣，顯示陽極處理裝置1為「分割電極/複數電源/同一處理槽」的構成的場合。
本例之陽極處理裝置1的全體構成，與第7實施型態的第3例之圖35相同。
如圖37所示，陽極化成處理部10，包含處理槽101、111及112、水盤102、上部電極104及106、絕緣體105、下部電極107、及保持部108。
處理槽101、水盤102、上部電極104及106、絕緣體105、以及下部電極107，與第2實施型態第3例的圖13相同。與第2實施型態的第3例相同，於上部電極104被連接電流源40。於上部電極106被連接電流源41。
處理槽111及112的構成，與第7實施型態的第3例之圖36相同。
7.5 相關於本實施型態之效果
根據相關於本實施型態的構成的話，可得到與第6實施型態同樣的效果。
進而，若是相關於本實施型態的構成的話，於上部電極與半導體基板之間，可以對半導體基板上面的中央部與外周部供給電阻值不同的電解液C及D。進而，第1、第3、第4例的場合，可以分別供給因應於被供給到2個上部電極106及104的電流量之電解液C及D。藉此，於陽極化成處理，可以提高形成多孔質層1100及1200的控制性。進而，可以更為擴展上部電極的電壓控制範圍。進而，藉由調整電解液C及D的電阻值，可以減低耗電量。
8. 第8實施型態
其次，說明第8實施型態。在第8實施型態，針對與第7實施型態的第1例不同的電解液C供給單元61及電解液D供給單元62的構成，說明4個例子。以下，以與第7實施型態的第1例不同之處為中心進行說明。
8.1 第1例
首先，針對第1例的陽極處理裝置1，用圖38進行說明。圖38係陽極處理裝置1之方塊圖。在第1例，與第1實施型態不同，針對電解液C供給單元61及電解液D供給單元62不具有循環機構的場合進行說明。
如圖38所示，本例之陽極處理裝置1，包含：陽極化成處理部10、電解液A供給單元11、電解液B供給單元12、電解液C供給單元61、電解液D供給單元62、電流供給部13、控制電路14以及濃度感測器91及92。
陽極化成處理部10、電解液A供給單元11、電解液B供給單元12、電流供給部13、及控制電路14，與第7實施型態的第1例之圖32相同。
電解液C供給單元61，不具有循環機構，把未使用的電解液C供給至陽極化成處理部10。亦即，電解液C供給單元61，於電解液C混合槽70，混合3種液體G～I產生電解液C。
電解液D供給單元62，與電解液C供給單元61同樣，不具有循環機構，把未使用的電解液D供給至陽極化成處理部10。亦即，電解液D供給單元62，於電解液D混合槽80，混合3種液體J～L產生電解液D。
配管64，未被連接於電解液D混合槽80，在處理部111使用的液體作為廢液排出。
配管66，未被連接於電解液C混合槽70，在處理部112使用的液體作為廢液排出。
濃度感測器91，監測配管66之排放液體的濃度，將其結果傳送至控制電路14。濃度感測器92，監測配管64之排放液體的濃度，將其結果傳送至控制電路14。例如，在本例之陽極處理裝置1，於每次陽極化成處理，反覆進行電解液C及D之新液供給與排液處理。但是，由濃度感測器91的監測結果，在判斷處理槽112內的電解液C，於次一陽極化成處理可以再利用的場合，陽極處理裝置1，可以再利用處理槽112的電解液C之全部或者一部分。同樣地，由濃度感測器92的監測結果，在判斷處理槽111內的電解液D，於次一陽極化成處理可以再利用的場合，陽極處理裝置1，可以再利用處理槽111的電解液D之全部或者一部分。再利用一部分的場合，不足的部分之電解液C及D分別由電解液C供給單元61及電解液D供給單元62供給。
8.2 第2例
其次，針對第2例的陽極處理裝置1，用圖39進行說明。圖39係陽極處理裝置1之方塊圖。在第2例，針對電解液C供給單元61及電解液D供給單元62使處理槽111的排液進行循環的場合進行說明。
如圖39所示，本例之陽極處理裝置1，包含：陽極化成處理部10、電解液A供給單元11、電解液B供給單元12、電解液C供給單元61、電解液D供給單元62、電流供給部13及控制電路14。
陽極化成處理部10、電解液A供給單元11、電解液B供給單元12、電流供給部13、及控制電路14，與第7實施型態的第1例之圖32相同。
電解液C供給單元61，與第7實施型態的第1例之圖32相同。在本例，電解液C供給單元61由處理槽111透過配管64回收液體。電解液C供給單元61，可以混合透過配管64由處理部111回收的液體(電解液C與電解液D之混合液)，與3種液體G～I，進行電解液C的產生及濃度調整。又，在本例，配管66被省略，但配管66亦可省略亦可作為處理槽112的廢液排出用管線使用。
電解液D供給單元62，與第7實施型態的第1例之圖32相同。電解液D供給單元62，與電解液C供給單元61同樣，由處理槽111透過配管64回收液體。
8.3 第3例
其次，針對第3例的陽極處理裝置1，用圖40進行說明。圖40係陽極處理裝置1之方塊圖。在第3例，針對電解液C供給單元61不具有循環機構，電解液D供給單元62具有循環機構的場合進行說明。
如圖40所示，本例之陽極處理裝置1，包含：陽極化成處理部10、電解液A供給單元11、電解液B供給單元12、電解液C供給單元61、電解液D供給單元62、電流供給部13、控制電路14、及濃度感測器91。
陽極化成處理部10、電解液A供給單元11、電解液B供給單元12、電解液D供給單元62、電流供給部13、及控制電路14，與第7實施型態的第1例之圖32相同。
電解液C供給單元61及濃度感測器91，與第8實施型態的第1例之圖38相同。
8.4 第4例
其次，針對第4例的陽極處理裝置1，用圖41進行說明。圖41係陽極處理裝置1之方塊圖。在第4例，針對電解液C供給單元61具有循環機構，電解液D供給單元62不具有循環機構的場合進行說明。
如圖41所示，本例之陽極處理裝置1，包含：陽極化成處理部10、電解液A供給單元11、電解液B供給單元12、電解液C供給單元61、電解液D供給單元62、電流供給部13及控制電路14。
陽極化成處理部10、電解液A供給單元11、電解液B供給單元12、電流供給部13、及控制電路14，與第7實施型態的第1例之圖32相同。
電解液C供給單元61，與第8實施型態的第2例之圖39相同。在本例，電解液C供給單元61由處理槽111透過配管64回收液體。又，在本例，電解液C供給單元61，由處理槽111透過配管64回收液體(電解液C與電解液D之混合液)的場合進行說明，但電解液C供給單元61亦可由處理槽112透過配管66回收液體(電解液C)。在此場合，例如，被連接於處理槽111的配管64，作為處理槽111的廢液排出用管線使用。
電解液D供給單元62，與第8實施型態的第1例之圖38相同。又，電解液C供給單元61，由處理槽112透過配管66回收液體(電解液C)的場合，亦即，配管66作為廢液排出用管線使用的場合，陽極處理裝置1，亦可具有第6實施型態的第1例所說明的濃度感測器92。由濃度感測器92的監測結果，在判斷處理槽111內的電解液D，於次一陽極化成處理可以再利用的場合，陽極處理裝置1，可以再利用處理槽111的電解液D之全部或者一部分。
8.5 相關於本實施型態之效果
可將相關於本實施型態的構成適用於第7實施型態。
9. 第9實施型態
其次，說明第9實施型態。第9實施型態，針對與第5及第7實施型態不同的保持部108的構成，說明2個例子。以下，以與第5及第7實施型態不同之處為中心進行說明。
9.1 第1例
首先，說明第1例。在第1例，針對保持部108具有上下配置的2個固定部113a及113b的場合，用圖42～圖45進行說明。圖42係被供給電解液A～C的狀態之陽極化成處理部10之剖面圖。圖43係固定部113a之俯視圖。圖44及圖45為圖42的區域RA的擴大圖。圖44顯示將半導體基板1000設置於陽極處理裝置1時的固定部113a及113b的位置。圖45顯示陽極化成處理時的固定部113a及113b的位置。
如圖42所示，陽極化成處理部10，包含處理槽101、103及111、水盤102、上部電極104及106、絕緣體105、下部電極107、以及保持部108。處理槽101，103及111、水盤102、上部電極104及106、絕緣體105、及下部電極107，與第7實施型態的第1例相同。又，陽極化成處理部10的構成，亦可為第5及第7實施型態說明的任一構成。
保持部108，包含複數固定部113a及113b。固定部113a及113b的剖面形狀，例如亦可為三角形。固定部113a及113b的剖面形狀為任意。固定部113a及113b的剖面形狀，以可保持半導體基板1000，且與半導體基板1000之接觸面更少的形狀為佳。
固定部113a與固定部113b，於保持部108的側面被配置於不同高度的位置。例如，固定部113a被配置與比固定部113b更靠保持部108的上端側(接近上部電極104側)。固定部113a及113b，能夠以成為突出於保持部108的內面的狀態(以下記為「突出狀態」)，與拉入保持部108的內部的狀態(以下記為「拉入狀態」)的方式移動。
如圖43所示，例如，3個固定部113a，被配置於對保持部108的中心分別旋轉120°的位置。又，圖43之例，顯示固定部113a在突出狀態的場合。固定部113a，由上俯視，例如具有三角形的形狀。又，固定部113a例如亦可為圓錐或四角錐的形狀。又，固定部113a的個數為任意。陽極化成處理時，以可固定半導體基板1000的方式，至少配置3個以上的固定部113a即可。
固定部113b也與固定部113a同樣。又，固定部113b的形狀、個數及配置，亦可與固定部113a不同。
其次，說明固定部113a及113b的動作。
如圖44所示，例如，把半導體基板1000設置於保持部108內部的場合，固定部113a在拉入狀態，固定部113b在突出狀態。藉此，由上方設置半導體基板1000時，固定部113b保持半導體基板1000下面，防止半導體基板1000落下。
如圖45所示，例如，陽極化成處理時，固定部113a在突出狀態，固定部113b在拉入狀態。藉此，半導體基板1000，由下側推抵於固定部113a，其位置被固定。
9.2 第2例
其次，說明第2例。在第2例，針對在保持部108使用彈性材料，用圖46進行說明。圖46，是顯示保持部108與半導體基板1000的配置之概念圖。
如圖46所示，保持部108使用彈性材料的場合，半導體基板1000的先端被壓接於保持部108的話，保持部108與半導體基板1000之密封性提高。又，保持部108，接於半導體基板1000的外周全體亦可，接於外周的一部分亦可。
9.3 相關於本實施型態之效果
可將本實施型態的構成適用於第5至第8實施型態。
又，組合本實施型態的第1例與第2例亦可。
10. 變形例
相關與前述實施型態之陽極處理裝置，具備：可進行基板的陽極化成處理的第1處理槽(101)，設於前述第1處理槽內側，可進行基板的陽極化成處理的第2處理槽(103)，可對第1處理槽供給第1電解液之第1電解液供給單元(12)，可對第2處理槽供給第2電解液之第2電解液供給單元(11)，可保持基板之保持部(108)，設於第1處理槽或第2處理槽上方的第1電極(104)，以及設於第1處理槽及第2處理槽下方之第2電極(107)。
藉由適用前述實施型態，可以在基板表面形成膜質不同的複數多孔質層。
又，實施型態不限定於前述說明之實施例，也可進行種種變形。
例如，在前述實施型態，針對可以在半導體基板表面的中央部與外周部形成2種不同膜質的多孔質層的陽極處理裝置進行說明，但亦可為可以形成3種以上不同膜質的多孔質層的陽極處理裝置。更具體地說，於陽極處理裝置1，上部電極例如同心圓狀設3個以上亦可，處理槽例如同心圓狀設3個以上亦可。
此外，前述實施型態之「連接」包含使其他某物中介而間接地連接的狀態。
此外，前述實施型態之「大致相同」，包含實行陽極化成處理時對多孔質層的形成不造成影響的程度的誤差。
說明了本發明的幾個實施型態，但這些實施型態只是提示作為例子之用，並未意圖限定發明的範圍。這些新穎的實施型態，能夠以其他種種型態來實施，在不逸脫發明要旨的範圍，可以進行種種的省略、置換、變更。這些實施型態或其變形，包含於發明的範圍或是要旨，而且包含於申請專利範圍所記載的發明以及其均等的範圍。The following describes the implementation mode with reference to the drawings. In addition, in the following description, components having approximately the same functions and configurations are given the same reference numerals, and repeated descriptions are performed only when necessary. In addition, each implementation type shown below is only an example of a device or method for embodying the technical idea of this implementation type. The technical idea of the implementation type does not specify the material, shape, structure, and arrangement of the constituent parts. Wait for the following ones. Various changes can be applied to the technical ideas of the implementation type within the scope of the patent application.
1. The first implementation type
The anodizing device related to the first embodiment will be described.
1.1 Overall composition
First, an example of the overall configuration of the anode treatment apparatus will be described with reference to FIG. 1. Figure 1 is a block diagram of an anodizing device.
As shown in FIG. 1, the anode treatment apparatus 1 includes an anodization treatment unit 10, an electrolytic solution A supply unit 11, an electrolytic solution B supply unit 12, a current supply unit 13, and a control circuit 14.
The anodization treatment section 10 includes a treatment tank and electrodes (anode and cathode) corresponding to the treatment tank, and performs anodization treatment on the surface of the semiconductor substrate. The configuration of the anodization treatment unit 10 will be described later.
The electrolytic solution A supply unit 11 supplies the electrolytic solution A to the treatment tank provided in the anodization treatment section 10. In addition, the electrolytic solution A supply unit 11 has a mechanism (for example, a pump, etc.) not shown for adjusting the hydraulic pressure of the electrolytic solution A supplied to the treatment tank. Electrolyte A is a treatment solution used for anodization treatment. As the electrolytic solution A, for example, a liquid containing hydrogen fluoride (HF) can be used. In addition, the electrolytic solution A supply unit 11 of the present embodiment does not have the function of circulating the liquid (electrolyte A) in the anodized conversion treatment section 10 and the electrolytic solution A mixing tank 20. That is, the electrolytic solution A supply unit 11 supplies the unused (new solution) electrolytic solution A to the anodization treatment unit 10.
The electrolytic solution A supply unit 11 includes: an electrolytic solution A mixing tank 20, a supply control unit 21, a plurality of liquid supply units 22 (in the example of FIG. 1, three liquid supply units 22a-22c), and a concentration sensor 23 .
The electrolyte A mixing tank 20 is a tank for mixing a plurality of liquids to produce electrolyte A. The electrolytic solution A supply unit 11, for example, mixes three types of liquids A to C as raw materials to produce the electrolytic solution A. The three types of liquids A to C may be, for example, HF (hydrofluoric acid) solution, DIW (Deionized Water), and ethanol. In addition, the liquid used for the generation of electrolyte A is not limited to three types. In addition, materials other than liquid can also be used for the generation of electrolyte A. The generated electrolytic solution A is supplied to the treatment tank in the anodization treatment unit 10 through the pipe 17.
The supply control unit 21 controls the supply amounts of the liquids A to C supplied to the electrolytic solution A mixing tank 20 under the control of the control circuit 14. For example, the supply control unit 21 includes a valve and a flow meter provided in the supply line of each liquid.
The liquid supply parts 22a-22c are connected to the electrolytic solution A mixing tank 20 via supply lines (piping), respectively. The liquid supply parts 22a-22c respectively supply the liquids A to C to the electrolyte A mixing tank 20 through the supply line. The liquid supply parts 22a-22c, for example, may have a mechanism for pressure-feeding the liquids A to C from the containers of the liquids A to C, respectively.
The concentration sensor 23 monitors the concentration of the electrolyte A (for example, the F concentration) in the electrolyte A mixing tank 20 and transmits the result to the control circuit 14. The control circuit 14 controls the supply control unit 21 to adjust the concentration of the electrolyte A based on the result of the concentration monitoring.
The electrolytic solution B supply unit 12 supplies the electrolytic solution B to a treatment tank different from the treatment tank provided in the anodization treatment section 10 to which the electrolytic solution A is supplied. In addition, the electrolytic solution B supply unit 12 has a mechanism (for example, a pump, etc.) not shown for adjusting the hydraulic pressure of the electrolytic solution B supplied to the treatment tank. Electrolyte B is a treatment solution used for anodization treatment. Electrolyte B may be the same as or different from electrolyte A. Hereinafter, the case where the electrolyte solution B has a different concentration (F concentration) from the electrolyte solution A will be described. Electrolyte B, use a liquid containing HF. In addition, the electrolytic solution B supply unit 12 of this embodiment has a function of circulating the electrolytic solution B in the anodized conversion treatment section 10 and the electrolytic solution B mixing tank 30. That is, the electrolytic solution B supply unit 12 can adjust the composition of the liquid recovered by the anodization treatment unit 10 and can supply it to the anodization treatment unit 10 again.
The electrolytic solution B supply unit 12 includes: an electrolytic solution B mixing tank 30, a supply control unit 31, a plurality of liquid supply units 32 (in the example of FIG. 1, three liquid supply units 32a to 32c), and a concentration sensor 33 .
The electrolyte B mixing tank 30 is a tank for mixing a plurality of liquids to produce electrolyte B. The electrolytic solution B supply unit 12 can be used as a raw material to mix the liquid recovered by the anodization treatment unit 10 through the pipe 16 with three kinds of liquids D to F to perform the generation of the electrolytic solution B and the concentration adjustment. The three liquids D to F, for example, may be HF solution, DIW, and ethanol. In addition, the liquid used for the generation of electrolyte B is not limited to three types. In addition, materials other than liquid may be used for the generation of electrolyte B. The generated electrolytic solution B is supplied to one of the treatment tanks of the anodization treatment unit 10 through the pipe 15. In addition, the electrolyte solution B mixing tank 30 has an overflow pipe for liquid discharge treatment when the liquid in the tank overflows.
The supply control unit 31 controls the supply amounts of the liquids D to F supplied to the electrolyte B mixing tank 30 under the control of the control circuit 14. For example, the supply control unit 31 includes a valve and a flow meter provided in the supply line of each liquid.
The liquid supply parts 32a to 32c are respectively connected to the electrolyte solution B mixing tank 30 via supply lines. The liquid supply parts 32a to 32c respectively supply the liquids D to F to the electrolyte B mixing tank 30 through the supply line. The liquid supply parts 32a to 32c may each have a mechanism for pressure-feeding the liquids D to F from the containers of the liquids D to F, for example.
The concentration sensor 33 monitors the concentration of the electrolyte B (for example, the F concentration) in the electrolyte B mixing tank 30 and transmits the result to the control circuit 14. The control circuit 14 controls the supply control unit 31 to adjust the concentration of the electrolytic solution B based on the result of the concentration monitoring.
The current supply unit 13 supplies current to the electrodes provided in the anodization treatment unit 10 under the control of the control circuit 14.
The control circuit 14 controls the entire anode treatment device 1.
1.2 The detailed structure of the anodizing treatment department
Next, an example of the detailed structure of the anodization treatment unit 10 will be described with reference to FIGS. 2 and 3. FIG. 2 is a perspective view of the anodization processing unit 10. FIG. 3 is a cross-sectional view of the anodization treatment section 10 in a state where electrolyte solutions A and B are supplied. The examples of FIGS. 2 and 3 show a case where the anodization treatment section 10 includes two upper electrodes and two treatment tanks connected to different current sources. Hereinafter, this structure is also referred to as "split electrode/plural power supply/split processing tank".
As shown in FIG. 2, the anodization treatment section 10 includes treatment tanks 101 and 103, a water pan 102, upper electrodes 104 and 106, an insulator 105, and a lower electrode 107. In addition, the insulator 105 may also be eliminated. In this case, for example, an air gap may be provided between the upper electrode 104 and the upper electrode 106. That is, it is sufficient as long as it is a structure in which the upper electrode 104 and the upper electrode 106 are not electrically connected.
The processing tank 101 has a cylindrical shape, for example. The inner diameter of the processing tank 101 is, for example, approximately the same as the inner diameter of the semiconductor substrate 1000 to be anodized. Hereinafter, the case where the semiconductor substrate 1000 is a single crystal silicon (Si) substrate will be described. The bottom surface of the processing tank 101 is connected to the lower electrode 107. During the anodization treatment, the upper end of the treatment tank 101 is located near the surface of the semiconductor substrate 1000. That is, the upper end of the processing tank 101 is not connected to the lower surface of the semiconductor substrate 1000 (the surface to be anodized to be processed). The treatment tank 101 is made of, for example, an insulating material having resistance to the electrolyte solutions A and B. Pipes 15 and 18 are connected to the processing tank 101. The pipe 15 is a liquid supply line to the processing tank 101. The pipe 18 is a liquid discharge line from the processing tank 101.
The water pan 102 is provided to recover the liquid overflowing from the upper end of the processing tank 101. The water pan 102 has, for example, a cylindrical shape. The inner diameter of the water pan 102 is larger than the outer diameter of the processing bath 101, the upper electrode 104, and the semiconductor substrate 1000. The water pan 102 is arranged concentrically with the treatment tank 101, for example. The bottom surface of the water pan 102 is connected to the upper end of the treatment tank 101 or the outer periphery near the upper end, for example. The height position of the upper end of the water pan is higher than the upper end of the treatment tank 101. The water pan 102 is made of, for example, an insulating material having resistance to the electrolytes A and B. In addition, the water pan 102 may be made of the same material as the treatment tank 101. The piping 16 is connected to the water pan 102. The pipe 16 is a liquid discharge line from the water pan 102.
The processing tank 103 has a cylindrical shape, for example. The inner diameter of the processing tank 103 is smaller than the inner diameter of the processing tank 101. The processing tank 103 has a bottom surface connected to the lower electrode 107, and is arranged concentrically with the processing tank 101, for example. The height position of the upper end of the processing tank 103 is approximately the same as that of the processing tank 101. The upper end of the processing tank 103 is not connected to the lower surface of the semiconductor substrate 1000 like the processing tank 101. The treatment tank 103 is made of, for example, an insulating material having resistance to the electrolytes A and B. In addition, the treatment tank 103 may be the same material as the treatment tank 101. Pipes 17 and 19 are connected to the processing tank 103. The pipe 17 is a liquid supply line to the processing tank 103. The pipe 19 is a liquid discharge line from the processing tank 103.
The upper electrode 104 functions as an anode in the anodization treatment using the treatment tank 101. That is, the upper electrode 104 faces the processing tank 101. The upper electrode 106 functions as an anode in the anodization treatment using the treatment tank 103. That is, the upper electrode 106 faces the processing tank 103. Above the processing tanks 101 and 103, the upper electrode 106 is the center, and the insulator 105 and the upper electrode 104 are formed concentrically. That is, the upper electrodes 106 and 104 are concentrically shaped, and an insulator 105 is provided between the upper electrodes 106 and 104. Thereby, the upper electrodes 106 and 104 are not electrically connected.
The outer diameter of the upper electrode 106 is approximately the same as the outer diameter of the processing tank 103. The outer diameter of the upper electrode 104 is approximately the same as the outer diameter of the processing tank 101. That is, the outer diameter of the upper electrode 104 is approximately the same as that of the semiconductor substrate 1000. In addition, the inner diameter of the upper electrode 104 is approximately the same as the outer diameter of the processing tank 103.
In this embodiment, the upper electrodes 104 and 106 are respectively supplied with different currents by the current supply unit 13. More specifically, the current supply unit 13 includes current sources 40 and 41. The current source 40 is connected to the upper electrode 104 and the lower electrode 107, and supplies an arbitrary current to the upper electrode 104 during the anodization process. The current source 41 is connected to the upper electrode 106 and the lower electrode 107, and supplies an arbitrary current to the upper electrode 106 during the anodization process.
The lower electrode 107 faces the upper electrodes 104 and 106 and functions as a cathode during the anodization process. The upper electrodes 104 and 106, and the lower electrode 107 are made of conductive materials.
In addition, plural pipes 15 to 19 may be provided in the treatment tanks 101 and 103 and the water pan 102, respectively.
As shown in FIG. 3, the anodization treatment section 10 includes a holding section 108. The semiconductor substrate 1000 is arranged such that the back surface is connected to the bottom surfaces of the upper electrodes 104 and 106 by the holding portion 108, and the surface (the anodized surface) faces downward (processing tanks 101 and 103). A gap GP1 is provided between the upper end of the processing tank 101 and the semiconductor substrate 1000. In addition, a gap GP2 is provided between the upper end of the processing tank 103 and the semiconductor substrate 1000.
In this embodiment, when the electrolytic solutions A and B are supplied to the anodization treatment section 10 at the same time, the hydraulic pressure of the electrolytic solution A supplied to the treatment tank 103 is higher than the hydraulic pressure of the electrolytic solution B supplied to the treatment tank 101 (electrolysis The hydraulic pressure of liquid A>the hydraulic pressure of electrolyte B). In addition, during the anodization treatment, the pipes 18 and 19 are closed. Thereby, the electrolytic solution A flows into the processing tank 101 from the processing tank 103 through the gap GP2. At this time, the hydraulic pressure of the electrolyte A is higher than the hydraulic pressure of the electrolyte B, so the electrolyte B does not flow from the treatment tank 101 toward the treatment tank 103. In addition, the remaining electrolytic solution B (the electrolytic solution B mixed with the electrolytic solution A) in the treatment tank 101 flows into the water pan 102 through the gap GP1.
In the example of FIG. 3, the outer diameter of the processing bath 101 is smaller than the inner diameter of the semiconductor substrate 1000. Therefore, a gap GP1 is provided between the upper end of the processing tank 101 and the semiconductor substrate 1000, but it is not limited to this. For example, the inner diameter of the processing bath 101 may be larger than the outer diameter of the semiconductor substrate 1000 including the holding portion 108, and the upper end of the processing bath may be located higher than the surface (lower surface) of the semiconductor substrate 1000 to be anodized. In this case, a gap GP1 is provided between the inner side of the upper end of the processing tank 101 and the holding portion 108 (and the outer diameter of the semiconductor substrate 1000).
1.3 An example of electrolyte concentration adjustment
Next, an example of the concentration adjustment of the electrolyte will be described with reference to FIG. 4. FIG. 4 is a diagram showing the monitoring result of the concentration sensor 33 of the electrolyte B supply unit 12.
As shown in FIG. 4, first, the electrolytic solution B supply unit 12 generates an electrolytic solution B of a preset adjustment target concentration in the electrolytic solution B mixing tank 30 at a time t0. Next, the electrolytic solution B supply unit 12 supplies the generated electrolytic solution B to the treatment tank 101.
At time t1, the anodization process is started. During the period from time t0 to t6, anodizing treatment is performed. During this period, the electrolyte solution B circulates between the treatment tank 101 and the electrolyte solution B mixing tank 30.
During the period from time t1 to t2, the concentration of electrolyte B gradually decreases due to the anodization treatment.
At time t2, when the concentration of electrolyte B decreases to the lower limit concentration that can perform the preset anodization treatment, electrolyte B supply unit 12 adds at least one of liquids D to F in electrolyte B mixing tank 30 , Start to adjust the concentration of electrolyte B.
During the period from time t2 to t3, the electrolytic solution B supply unit 12 adjusts the concentration of the electrolytic solution B.
At time t3, when the concentration of the electrolytic solution B reaches the adjustment target concentration, the electrolytic solution B supply unit 12 ends the adjustment of the concentration of the electrolytic solution B.
During the period from time t3 to t4, the concentration of electrolyte B gradually decreases due to the anodization treatment.
At time t4, when the concentration of the electrolytic solution B drops to the lower limit concentration at which a preset anodization process can be performed, the electrolytic solution B supply unit 12 starts the concentration adjustment of the electrolytic solution B again.
During the period from time t4 to t5, the electrolytic solution B supply unit 12 adjusts the concentration of the electrolytic solution B.
At time t5, when the concentration of the electrolytic solution B reaches the adjustment target concentration, the electrolytic solution B supply unit 12 ends the adjustment of the concentration of the electrolytic solution B.
At time t6, the anodization process is ended. In addition, the example of FIG. 4 shows a case where the electrolyte B supply unit 12 adjusts the concentration of the electrolyte B again in preparation for the next treatment after the anodization treatment is completed at time t6, but it is not limited to this. Electrolyte B can also be drained.
1.4 The surface state of the semiconductor substrate after anodization treatment
Next, the surface state of the semiconductor substrate 1000 after the anodization treatment will be described with reference to FIG. 5. The example of FIG. 5 is a view of the surface and cross-section of the semiconductor substrate 1000 after anodization treatment.
As shown in FIG. 5, by using the anodizing apparatus 1 of this embodiment, a porous layer with different characteristics (such as porous Silicon layer).
More specifically, in the center portion of the surface of the semiconductor substrate 1000, a porous layer 1100 corresponding to the upper electrode 106 and the processing tank 103 (electrolyte A) is formed. In addition, on the outer periphery of the surface of the semiconductor substrate 1000, a porous layer 1200 corresponding to the upper electrode 104 and the processing tank 101 (electrolyte solution B) is formed. The porous layers 1100 and 1200 have different anodization treatment conditions. Specifically, as anodization treatment conditions, for example, the amount of current supplied to the upper electrodes 104 and 106 (the amount of current per unit area of the upper electrodes 104 and 106) and/or the concentration of the electrolytes A and B are different. Thereby, the anode treatment apparatus 1 can form porous layers 1100 and 1200 with different film qualities (mechanical strength). The porous layers 1100 and 1200 are different in any of hardness, average porosity, density, layer thickness, etc., for example. For example, the hardness of the porous layer 1100 may be higher or lower than that of the porous layer 1200. For example, the hardness can be measured by a Vickers hardness tester. The average particle size can be measured by the gas adsorption method.
1.5 A specific example of a manufacturing method of a semiconductor device using a semiconductor substrate that has undergone anodization treatment
Next, a specific example of a manufacturing method of a semiconductor device using the semiconductor substrate 1000 that has been subjected to anodization treatment will be described with reference to FIG. 6. FIG. 6 is a flowchart showing an example of a method of bonding a semiconductor substrate. As one of the manufacturing methods of a semiconductor device, there is a method of bonding a first (semiconductor) substrate on which the element layer 1 is formed and a second (semiconductor) substrate on which the element layer 2 is formed to form a semiconductor device. In the element layers 1 and 2, for example, various circuits including elements such as transistors are provided. In this case, after bonding the first substrate and the second substrate, that is, after bonding the element layer 1 and the element layer 2, the first substrate is removed. In the example of FIG. 6, the case where the first substrate has a semiconductor substrate with a porous layer formed using the anode treatment apparatus 1 according to this embodiment will be described.
As shown in FIG. 6, first, using the anodizing apparatus 1 of this embodiment, the anodization treatment of the first substrate 1000a is performed to form porous layers 1100 and 1200(a) on the surface.
Next, the element layer 1 (b) is formed on the surface of the first substrate on which the porous layers 1100 and 1200 are formed. In addition, the element layer 2(c) is formed on the second substrate 1000b.
Next, the first substrate 1000a and the second substrate 1000b are bonded together so that the element layer 1 and the element layer 2 face each other and are electrically connected to each other (d).
Next, using the porous layers 1100 and 1200 as release layers, the first substrate 1000a and the element layer 1 (second substrate 1000b) are separated (e). The surface of the peeled first substrate 1000a is polished, and the remaining porous layers 1100 and 1200 are removed (f). Thereby, the surface-polished first substrate 1000a can be reused.
Next, the porous layers 1100 and 1200 (g) on the surface of the second substrate are removed. Thereby, the second substrate 1000b on which the element layers 1 and 2 are provided is formed.
Here, the porous layers 1100 and 1200 have a manufacturing step in the element layer 1 and a bonding step (d) of the first substrate 1000a and the second substrate 1000b, so that the porous layer does not peel off from the first substrate 1000a or The fracture hardness of the porous layer. Furthermore, the porous layers 1100 and 1200 have a peeling step (e) between the first substrate 1000a and the second substrate 1000b, and have a hardness that functions as a peeling layer. For example, in order to prevent peeling in the manufacturing step and bonding step of the element layer 1, the hardness of the porous layer 1200 (outer peripheral part) is preferably higher than the hardness of the porous layer 1100 (central part).
1.6 Effects related to this implementation type
For example, in the bonding method of a semiconductor substrate, which is one of the manufacturing methods of semiconductor devices, when a semiconductor substrate without a porous layer is used, the mechanical strength of the semiconductor substrate is high, so there is a gap between the semiconductor substrate and the element layer formed thereon. Peeling is difficult. That is, unnecessary semiconductor substrates are mostly removed by grinding or the like. In this case, the semiconductor substrate removed by grinding is discarded and cannot be reused. In addition, when a single porous layer is provided between the semiconductor substrate and the element layer, the mechanical strength of the porous layer is low, so peeling of the porous layer occurs in the manufacturing step of the element layer or the bonding step of the semiconductor substrate. Or the possibility of breakage is high.
In contrast, with regard to the configuration of the present embodiment, the anode treatment apparatus 1 can supply electrolyte solutions A and B of different concentrations to the center portion and the outer peripheral portion of the surface of the semiconductor substrate. In addition, the anodizing apparatus 1 has two upper electrodes 106 and 104 corresponding to the central portion and the outer peripheral portion of the surface of the semiconductor substrate, and can supply different amounts of current. In other words, the anode treatment apparatus 1 can form porous layers 1100 and 1200 with different film qualities on the central part and the outer peripheral part of the surface of the semiconductor substrate.
Using the anode treatment apparatus 1 of this embodiment, by forming porous layers 1100 and 1200 with different film qualities on the center and outer periphery of the semiconductor substrate surface, for example, it can be formed as a semiconductor substrate in the bonding method of the device layer. The porous layers 1100 and 1200 function as a peeling layer without peeling during the manufacturing process or the bonding process of the semiconductor substrate. Thereby, the semiconductor substrate separated at the position of the porous layer can be reused.
2. The second implementation type
Next, the second embodiment will be explained. In the second embodiment, three examples are shown for the configuration of the anodizing apparatus 1 different from the first embodiment. The following description will focus on the differences from the first embodiment.
2.1 The first case
First, the anode treatment apparatus 1 related to the first example will be described. In the first example, a case where the upper electrode of the anodization treatment section 10 is not divided will be described. The overall configuration of the anode treatment apparatus 1 of the first example is the same as that of FIG. 1 of the first embodiment.
Next, an example of the detailed structure of the anodization treatment unit 10 will be described with reference to FIGS. 7 and 8. FIG. 7 is a perspective view of the anodization processing unit 10. FIG. 8 is a cross-sectional view of the anodization treatment section 10 in a state where electrolyte solutions A and B are supplied. The examples of FIGS. 7 and 8 show a case where the anodization treatment section 10 includes one upper electrode connected to one current source and two treatment tanks. Hereinafter, this structure is also labeled as "same electrode/single power supply/divided processing tank".
As shown in FIG. 7 and FIG. 8, the anodization treatment unit 10 includes treatment tanks 101 and 103, a water pan 102, an upper electrode 104, a lower electrode 107, and a holding unit 108. That is, the anodization treatment section 10 of this example has a structure in which the upper electrode is not divided in FIGS. 2 and 3 of the first embodiment.
The upper electrode 104 functions as an anode in the anodization treatment using the treatment tanks 101 and 103. That is, the upper electrode 104 faces the processing tanks 101 and 103. The outer diameter of the upper electrode 104 is approximately the same as the outer diameter of the processing tank 101. That is, the outer diameter of the upper electrode 104 is approximately the same as that of the semiconductor substrate 1000. The height of the upper electrode 104 is higher than the upper end of the water pan 102.
In this embodiment, the current supply unit 13 includes a current source 40. The current source 40 is connected to the upper electrode 104 and the lower electrode 107, and supplies an arbitrary current to the upper electrode 104 during the anodization process.
The other structures, that is, the structures of the treatment tanks 101 and 103, the water pan 102, etc., are the same as those in FIGS. 2 and 3 of the first embodiment.
2.2 Example 2
Next, the anode treatment apparatus 1 related to the second example will be described. In the second example, a case where the treatment tank 103 of the anodization treatment section 10 is omitted will be described.
First, an example of the overall configuration of the anode treatment apparatus 1 will be described with reference to FIG. 9. FIG. 9 is a block diagram of the anodizing device 1.
As shown in FIG. 9, in the anode treatment apparatus 1 of this example, the electrolytic solution B supply unit 12 is omitted. Next, like the electrolyte solution B supply unit 12 in FIG. 1 of the first embodiment, the electrolyte solution A supply unit 11 has a circulation mechanism for circulating the electrolyte solution A in the electrolyte solution A mixing tank 20 and the anodization treatment section 10. More specifically, in the electrolytic solution A mixing tank 20, the liquid recovered by the anodization treatment unit 10 through the pipe 16 can be mixed with three kinds of liquids A to C, and the electrolytic solution A can be produced and the concentration adjusted. The generated electrolytic solution A is supplied to the anodization treatment unit 10 through the pipe 15. In addition, the electrolyte solution A mixing tank 20 has an overflow pipe for liquid discharge treatment when the liquid in the tank overflows. In addition, the electrolytic solution A supply unit 11 may not have an electrolytic solution A circulation mechanism. That is, it may have the same structure as that of FIG. 1 of the first embodiment.
Next, an example of the detailed structure of the anodization treatment unit 10 will be described with reference to FIGS. 10 and 11. FIG. 10 is a perspective view of the anodization processing unit 10. FIG. 11 is a cross-sectional view of the anodization treatment section 10 in a state where the electrolyte A is supplied. The examples in FIGS. 10 and 11 show a case where the anodization treatment section 10 includes two upper electrodes 104 and 106 connected to one current source, and one treatment tank 101. Hereinafter, this structure is also labeled as "divided electrode/single power supply/same processing tank".
As shown in FIG. 10 and FIG. 11, the anodization treatment part 10 includes a treatment tank 101, a water pan 102, upper electrodes 104 and 106, an insulator 105, a lower electrode 107, and a holding part 108. That is, the anodization treatment section 10 of this example has a configuration in which the treatment tank 103 is omitted from FIGS. 2 and 3 of the first embodiment. In addition, in this example, the pipes 17 and 19 connected to the processing tank 103 are also omitted.
The upper electrode 104 functions as an anode when the porous layer 1200 is formed during the anodization treatment. The upper electrode 106 functions as an anode when the porous layer 1100 is formed during the anodization treatment.
In this example, the upper electrode 104 is connected to the current source 40 through the switch SW1. In addition, the upper electrode 106 is connected to the current source 40 through the switch SW2.
As shown in FIG. 11, in this example, the processing tank 103 is omitted, so there is no gap GP2. During the anodization treatment, the pipe 18 is closed. Therefore, the remaining electrolytic solution A in the treatment tank 101 flows into the water pan 102 through the gap GP1.
The other structures, that is, the structures of the treatment tank 101, the water pan 102, the upper electrodes 104 and 106, etc., are the same as those in FIGS. 2 and 3 of the first embodiment.
2.3 Example 3
Next, the anode treatment apparatus 1 related to the third example will be described. In the third example, which is different from the second example of the second embodiment, a description will be given of a case where current sources are provided in the upper electrodes 104 and 106, respectively. The overall configuration of the anode treatment apparatus 1 of the third example is the same as that of FIG. 9 of the second example of the second embodiment.
Next, an example of the detailed structure of the anodization treatment unit 10 will be described with reference to FIGS. 12 and 13. FIG. 12 is a perspective view of the anodization processing unit 10. FIG. 13 is a cross-sectional view of the anodization treatment section 10 in a state where the electrolyte A is supplied. The examples of FIGS. 12 and 13 show a case where the anodization treatment section 10 includes two upper electrodes connected to different current sources and one treatment tank. Hereinafter, this structure is also labeled as "divided electrodes/multiple power sources/same processing tank".
As shown in FIG. 12 and FIG. 13, the structure of the anodization processing part 10 is the same as that of FIG. 10 and FIG. 11 of the 2nd example of 2nd Embodiment.
In this example, the upper electrode 104 is connected to the current source 40 in the same manner as in FIGS. 2 and 3 of the first embodiment. In addition, the upper electrode 106 is connected to the current source 41.
2.4 Effects related to this implementation type
According to the configuration related to this embodiment, the same effect as the first embodiment can be obtained.
3. The third implementation type
Next, the third embodiment will be explained. In the third embodiment, six examples are shown for the method of anodizing treatment using the anodizing device 1. The following description will focus on the differences from the first and second embodiments.
3.1 The first example
First, the method of the anodization treatment related to the first example will be described with reference to FIG. 14. Fig. 14 is a block diagram showing the method of anodizing treatment related to the first example. In the first example, the anode treatment apparatus 1 described in the first embodiment of the first embodiment or the second embodiment is used to form the porous layer 1100 and the porous layer 1200 at different time points. Be explained.
As shown in FIG. 14, the semiconductor substrate 1000 carried in the anodizing apparatus 1 is fixed by the holding part 108 (step S10).
Next, the electrolytic solution A supply unit 11 generates the electrolytic solution A and supplies it to the treatment tank 103 (step S11).
Next, the control circuit 14 executes the anodization process of the center portion of the semiconductor substrate 1000 (step S12). That is, the control circuit 14 is formed as a porous layer 1100. More specifically, for example, in the case of the anodizing apparatus 1 of the first embodiment, electric current is supplied to the upper electrode 106 from the current source 41 to perform anodization treatment. In addition, for example, in the case of the anode treatment apparatus 1 of the first example of the second embodiment, current is supplied to the upper electrode 104 from the current source 40. At this time, the electrolytic solution B is not supplied to the treatment tank 101. Therefore, the porous layer 1100 is formed, and the porous layer 1200 is not formed.
Next, the control circuit 14 discharges the electrolytic solution A from the treatment tank 103 through the pipe 19 (step S13).
Next, the electrolytic solution B supply unit 12 generates the electrolytic solution B and supplies it to the treatment tank 101 (step S14).
Next, the control circuit 14 executes the anodization treatment of the outer peripheral portion of the semiconductor substrate 1000 (step S15). That is, the control circuit 14 is formed as a porous layer 1200. More specifically, for example, in the case of the anodizing apparatus 1 of the first embodiment, electric current is supplied to the upper electrode 104 from the current source 40 to perform anodization treatment. In addition, for example, in the case of the anode treatment apparatus 1 of the first example of the second embodiment, current is supplied to the upper electrode 104 from the current source 40. At this time, the electrolytic solution A is not supplied to the treatment tank 103. Therefore, the porous layer 1200 is formed, and the porous layer 1100 is not formed.
Next, the control circuit 14 discharges the electrolytic solution B from the treatment tank 101 through the pipe 18 (step S16).
The semiconductor substrate 1000 is carried out by the anodizing apparatus 1, and the anodization process is completed (step S17).
In addition, in this example, the case where the porous layer 1200 is formed after the porous layer 1100 is formed is described, but the porous layer 1100 may be formed after the porous layer 1200 is formed.
3.2 Example 2
Next, the method of the anodization treatment related to the second example will be described with reference to FIG. 15. Fig. 15 is a block diagram showing the method of anodizing treatment related to the second example. In the second example, an example in which the porous layer 1100 and the porous layer 1200 are collectively formed using the anode treatment apparatus 1 described in the first embodiment or the first embodiment of the second embodiment will be described.
As shown in FIG. 15, the semiconductor substrate 1000 carried in the anode treatment apparatus 1 is fixed by the holding part 108 (step S10).
Next, the electrolytic solution A supply unit 11 generates the electrolytic solution A and supplies it to the treatment tank 103. In addition, the electrolytic solution B supply unit 12 generates the electrolytic solution B and supplies it to the treatment tank 101 (step S21).
Next, the control circuit 14 executes the anodization process of the semiconductor substrate 1000 (step S22). That is, the control circuit 14 is formed as porous layers 1100 and 1200. More specifically, for example, in the case of the anodizing apparatus 1 of the first embodiment, the current source 40 supplies current to the upper electrode 104, and the current source 41 supplies current to the upper electrode 106. In addition, for example, in the case of the anode treatment apparatus 1 of the first example of the second embodiment, current is supplied to the upper electrode 104 from the current source 40. Thereby, the porous layer 1100 and the porous layer 1200 are integrally formed.
Next, the control circuit 14 discharges the electrolytic solution A from the treatment tank 103 through the pipe 19. Next, the control circuit 14 discharges the electrolytic solution B from the treatment tank 101 through the pipe 18 (step S23).
The semiconductor substrate 1000 is carried out by the anodizing apparatus 1, and the anodization process is completed (step S17).
3.3 Example 3
Next, the method of the anodization treatment related to the third example will be described with reference to FIG. 16. Fig. 16 is a block diagram showing the method of anodizing treatment related to the third example. In the third example, an example in which the porous layer 1100 and the porous layer 1200 are formed at different time points using the anode treatment apparatus 1 described in the second example of the second embodiment will be described.
As shown in FIG. 16, the semiconductor substrate 1000 carried in the anode treatment apparatus 1 is fixed by the holding part 108 (step S10).
Next, the electrolytic solution A supply unit 11 generates the electrolytic solution A and supplies it to the treatment tank 101 (step S31).
Next, the control circuit 14 turns on one of the switches SW1 and SW2, and performs anodization processing (step S32). When the control circuit 14 turns on the switch SW2, current is supplied to the upper electrode 106 from the current source 40, and the porous layer 1100 is formed. Alternatively, when the control circuit 14 turns on the switch SW1, current is supplied to the upper electrode 104 from the current source 40, and the porous layer 1200 is formed.
Next, the control circuit 14 sets the other of the switches SW1 and SW2 that were not in the open state in step S32 to the open state, and executes the anodization process (step S33). Thereby, either the porous layer 1100 or the porous layer 1200 that was not formed in step S32 is formed.
Next, the control circuit 14 discharges the electrolytic solution A from the treatment tank 101 through the pipe 18 (step S34).
The semiconductor substrate 1000 is carried out by the anodizing apparatus 1, and the anodization process is completed (step S17).
In addition, in this example, the order of forming the porous layer 1100 and the porous layer 1200 can be arbitrarily set.
3.4 Example 4
Next, the method of the anodization treatment related to the fourth example will be described using FIG. 17. Fig. 17 is a block diagram showing the method of anodizing treatment related to the fourth example. In the fourth example, an example in which the porous layer 1100 and the porous layer 1200 are formed at different time points using the anode treatment apparatus 1 described in the third example of the second embodiment will be described.
As shown in FIG. 17, the semiconductor substrate 1000 carried in the anode treatment apparatus 1 is fixed by the holding part 108 (step S10).
Next, the electrolytic solution A supply unit 11 generates the electrolytic solution A and supplies it to the treatment tank 101 (step S41).
Next, the control circuit 14 supplies a current from one of the current sources 40 and 41 to the corresponding upper electrode, and performs anodization treatment on one of the outer peripheral portions of the center portion of the semiconductor substrate 1000 (step S42). When current is supplied from the current source 41 to the upper electrode 106, the porous layer 1100 is formed. Alternatively, when current is supplied from the current source 40 to the upper electrode 104, the porous layer 1200 is formed.
Next, the control circuit 14 supplies current from the other of the current sources 40 and 41 not used in step S42 to the corresponding upper electrode, and performs anodization treatment on the other of the central outer peripheral portion of the semiconductor substrate 1000 (step S43). Thereby, either the porous layer 1100 or the porous layer 1200 that was not formed in step S42 is formed.
Next, the control circuit 14 discharges the electrolytic solution A from the treatment tank 101 through the pipe 18 (step S44).
The semiconductor substrate 1000 is carried out by the anodizing apparatus 1, and the anodization process is completed (step S17).
In addition, in this example, the order of forming the porous layer 1100 and the porous layer 1200 can be arbitrarily set.
3.5 Example 5
Next, the method of the anodization treatment related to the fifth example will be described with reference to FIG. 18. FIG. 18 is a block diagram showing the method of anodizing treatment related to the fifth example. In the fifth example, an example of a case where the porous layer 1100 and the porous layer 1200 are collectively formed using the anode treatment apparatus 1 described in the third example of the second embodiment will be described.
As shown in FIG. 18, the semiconductor substrate 1000 carried in the anode treatment apparatus 1 is fixed by the holding part 108 (step S10).
Next, the electrolytic solution A supply unit 11 generates the electrolytic solution A and supplies it to the treatment tank 101 (step S51).
Next, the control circuit 14 supplies electric currents of different magnitudes to the corresponding upper electrodes 104 and 106 from the current sources 40 and 41, and performs anodization processing (step S52). Thereby, the porous layer 1100 and the porous layer 1200 are integrally formed.
Next, the control circuit 14 discharges the electrolytic solution A from the treatment tank 101 through the pipe 18 (step S53).
The semiconductor substrate 1000 is carried out by the anodizing apparatus 1, and the anodization process is completed (step S17).
3.6 Example 6
Next, the method of the anodization treatment related to the sixth example will be described with reference to FIG. 19. Fig. 19 is a block diagram showing the method of anodizing treatment related to the sixth example. In the sixth example, an example in which the porous layer 1100 and the porous layer 1200 are collectively formed using the anode treatment apparatus 1 described in the first embodiment will be described.
As shown in FIG. 19, the semiconductor substrate 1000 carried in the anode treatment apparatus 1 is fixed by the holding part 108 (step S10).
Next, the electrolytic solution B supply unit 12 generates the electrolytic solution B and supplies it to the treatment tank 101. In addition, the electrolytic solution A supply unit 11 generates an electrolytic solution A having a different concentration from the electrolytic solution B, and supplies it to the treatment tank 103 (step S61).
Next, the control circuit 14 supplies electric currents of different magnitudes to the corresponding upper electrodes 104 and 106 from the current sources 40 and 41, and performs anodization processing (step S62). That is, in this example, the control circuit 14 performs the anodization treatment under the conditions that the electrolyte concentration and the amount of current are different. Thereby, the porous layer 1100 and the porous layer 1200 are integrally formed.
Next, the control circuit 14 discharges the electrolytic solution A from the treatment tank 103 through the pipe 19. Next, the control circuit 14 discharges the electrolytic solution B from the treatment tank 101 through the pipe 18 (step S63).
The semiconductor substrate 1000 is carried out by the anodizing apparatus 1, and the anodization process is completed (step S17).
3.7 Effects related to this implementation type
The first to sixth examples of this embodiment can be implemented with the anode treatment apparatus 1 described in the first and second embodiments.
4. The fourth implementation type
Next, the fourth embodiment will be described. In the fourth embodiment, four examples will be described with respect to the configurations of the electrolytic solution A supply unit 11 and the electrolytic solution B supply unit 12 that are different from the first embodiment. Hereinafter, the description will be focused on the differences from the first to third embodiments.
4.1 The first example
First, the anode treatment apparatus 1 related to the first example will be described with reference to FIG. 20. FIG. 20 is a block diagram of the anodizing device 1. In the first example, unlike the first embodiment, a case where the electrolyte B supply unit 12 does not have a circulation mechanism for the electrolyte B will be described.
As shown in FIG. 20, the anode treatment apparatus 1 of this example includes an anodization treatment unit 10, an electrolyte solution A supply unit 11, an electrolyte solution B supply unit 12, a current supply unit 13, a control circuit 14, and a concentration sensor 50.
The structure of the electrolytic solution A supply unit 11 is the same as that of the electrolytic solution A supply unit 11 in FIG. 1 of the first embodiment.
The electrolytic solution B supply unit 12 is the same as the electrolytic solution A supply unit 11 and does not have a circulation mechanism, and supplies the unused electrolytic solution B to the anodization treatment unit 10. That is, the electrolytic solution B supply unit 12 mixes the three types of liquids D to F in the electrolytic solution B mixing tank 30 to produce the electrolytic solution B.
The piping 16 is not connected to the electrolyte solution B mixing tank 30, and the liquid used in the anodization treatment unit 10 (that is, the recovered liquid recovered by the water pan 102) is discharged as a drain liquid.
The concentration sensor 50 monitors the concentration of the discharged liquid (a mixture of electrolyte A and electrolyte B) of the pipe 16 and transmits the result to the control circuit 14. For example, in the anode treatment apparatus 1 of this example, the fresh electrolyte supply and drain treatment of electrolytes A and B are repeatedly performed every time the anodization treatment is performed. However, based on the results of the concentration monitoring of the discharged liquid of the concentration sensor 50, when it is judged that the electrolytes A and B in the treatment tanks 101 and 103 can be reused in the next anodization treatment, the treatment tanks 101 and 101 can be reused. All or part of 103 electrolytes A and B. When a part is reused, the insufficient electrolyte solutions A and B are supplied by the electrolyte solution A supply unit 11 and the electrolyte solution B supply unit 12, respectively.
4.2 Example 2
Next, the anode treatment apparatus 1 related to the second example will be described with reference to FIG. 21. FIG. 21 is a block diagram of the anodizing device 1. In the second example, a case where the electrolyte solution A supply unit 11 and the electrolyte solution B supply unit 12 have an electrolyte circulation mechanism will be described.
As shown in FIG. 21, the anode treatment apparatus 1 of this example includes an anodization treatment unit 10, an electrolytic solution A supply unit 11, an electrolytic solution B supply unit 12, a current supply unit 13, and a control circuit 14.
The structure of the electrolytic solution B supply unit 12 is the same as that of the electrolytic solution B supply unit 12 in FIG. 1 of the first embodiment. In short, the electrolytic solution B is recovered from the treatment tank 101 through the pipe 16.
The electrolytic solution A supply unit 11, like the electrolytic solution B supply unit 12, can pass through the pipe 16 to adjust the composition of the liquid (mixed solution of the electrolytic solution A and the electrolytic solution B) recovered from the water pan 102 in the anodization treatment section 10 , It is again supplied to the treatment tank 103 of the anodization treatment unit 10.
4.3 Example 3
Next, the anode treatment apparatus 1 related to the third example will be described with reference to FIG. 22. FIG. 22 is a block diagram of the anodizing device 1. In the third example, unlike the second example, a case where the electrolytic solution A supply unit 11 recovers the electrolytic solution A from the treatment tank 103 through the pipe 19 will be described.
As shown in FIG. 22, the anode treatment apparatus 1 of this example includes an anodization treatment unit 10, an electrolytic solution A supply unit 11, an electrolytic solution B supply unit 12, a current supply unit 13, and a control circuit 14.
The electrolytic solution A mixing tank 20 of the electrolytic solution A supply unit 11 of this example is connected to the treatment tank 103 of the anodization treatment unit 10 through a pipe 19. That is, the electrolytic solution A supply unit 11 can adjust the composition of the electrolytic solution A recovered in the treatment tank 103 and supply it to the treatment tank 103 of the anodization treatment unit 10 again. The other structure is the same as that of FIG. 21 in the second example of the fourth embodiment.
4.4 Example 4
Next, the anode treatment apparatus 1 related to the fourth example will be described with reference to FIG. 23. FIG. 23 is a block diagram of the anodizing device 1. In the fourth example, unlike the first embodiment, a description will be given of a case where the electrolyte solution A supply unit 11 has a circulation mechanism and the electrolyte solution B supply unit 12 does not have a circulation mechanism.
As shown in FIG. 23, the anode treatment apparatus 1 of this example includes an anodization treatment unit 10, an electrolytic solution A supply unit 11, an electrolytic solution B supply unit 12, a current supply unit 13, and a control circuit 14.
The electrolytic solution A mixing tank 20 of the electrolytic solution A supply unit 11 of this example can be recovered from the water pan 102 in the anodization treatment section 10 through the pipe 16 as shown in FIG. 21 of the second example of the fourth embodiment. The composition of the liquid (a mixed solution of the electrolyte A and the electrolyte B) is adjusted and supplied to the treatment tank 103 of the anodization treatment section 10 again.
The electrolytic solution B supply unit 12 is the same as FIG. 20 in the first example of the fourth embodiment, and does not have a circulation mechanism, and supplies the unused electrolytic solution B to the anodization treatment section 10. That is, the electrolytic solution B supply unit 12 mixes the three types of liquids D to F in the electrolytic solution B mixing tank 30 to produce the electrolytic solution B.
4.5 Effects related to this implementation type
According to the configuration related to this embodiment, the same effects as the first to third embodiments can be obtained.
In addition, the anodization treatment section 10 described in the first example and the second example of the second embodiment can be applied to the first to fourth examples of this embodiment. In addition, the anodization treatment methods described in the first, second, and sixth examples of the third embodiment can be implemented in the first to fourth examples of the present embodiment.
5. Fifth Implementation Type
Next, the fifth embodiment is explained. In the fifth embodiment, four examples are shown with respect to the configuration of the anodizing apparatus 1 that is different from the first to fourth embodiments. The anodizing apparatus 1 of this embodiment has a mechanism for supplying electrolyte between the upper electrode and the upper surface of the semiconductor substrate 1000 (the surface that is not anodized). Hereinafter, the description will be focused on the differences from the first to fourth embodiments.
5.1 The first example
5.1.1 Overall composition
First, the overall configuration of the anode treatment apparatus 1 of the first example will be described with reference to FIG. 24. Figure 24 is a block diagram of the anodizing device. In addition, the electrolytic solution A supply unit 11 and the electrolytic solution B supply unit 12 of this embodiment are the same as the first embodiment. Therefore, in the example of FIG. 24, the detailed content of the constituent elements of the electrolytic solution A supply unit 11 and the electrolytic solution B supply unit 12 is omitted.
As shown in FIG. 24, the anode treatment apparatus 1 includes an anodization treatment unit 10, an electrolytic solution A supply unit 11, an electrolytic solution B supply unit 12, an electrolytic solution C supply unit 61, a current supply unit 13, and a control circuit 14.
The anodization treatment section 10 includes a plurality of treatment tanks and a plurality of electrodes, and performs anodization treatment on the surface of the semiconductor substrate. The configuration of the anodization treatment unit 10 will be described later.
The electrolytic solution A supply unit 11, the electrolytic solution B supply unit 12, and the current supply unit 13 are the same as those in FIG. 1 of the first embodiment.
The electrolytic solution C supply unit 61 supplies the electrolytic solution C to the treatment tank provided between the upper electrode in the anodized conversion treatment section 10 and the upper surface (the surface that is not anodized) of the semiconductor substrate 1000. In addition, the electrolytic solution C supply unit 61 has a mechanism (for example, a pump, etc.) not shown for adjusting the hydraulic pressure of the electrolytic solution C supplied to the treatment tank. As the electrolyte solution C, for example, a solution that hardly reacts with the semiconductor substrate 1000 (does not dissolve silicon) during the anodization process is used. In addition, in order to suppress metal contamination of the semiconductor substrate 1000, the electrolyte solution C is preferably one that does not contain metal elements. The electrolytic solution C supply unit 61 of this embodiment has a function of circulating the electrolytic solution C in the anodization treatment section 10 and the electrolytic solution C mixing tank 70. That is, the electrolytic solution C supply unit 61 can adjust the composition of the liquid recovered by the anodization treatment unit 10 through the pipe 64 and can supply it to the anodization treatment unit 10 again.
The electrolytic solution C supply unit 61 includes: an electrolytic solution C mixing tank 70, a supply control unit 71, a plurality of liquid supply units 72 (in the example of FIG. 24, three liquid supply units 72a to 72c), and a concentration sensor 73 .
The electrolyte C mixing tank 70 is a tank for mixing a plurality of liquids to produce electrolyte C. The electrolytic solution C supply unit 61, for example, mixes three kinds of liquids G to I as raw materials to produce the electrolytic solution C. In addition, the liquid used for the generation of the electrolytic solution C is not limited to three types. In addition, materials other than liquid can also be used for the generation of electrolyte C. For example, the electrolyte C may be a diluted HF aqueous solution that hardly reacts with the semiconductor substrate 1000 during the anodization treatment, may be a diluted HCl aqueous solution, or may be a non-water-soluble organic electrolyte. For example, the raw material of electrolyte C can also be at least any one of non-water-soluble electrolyte, acetonitrile, propylene carbonate, or dimethylformamide. In addition, the raw material of the electrolytic solution C may also be selected from at least any one of anhydrous HF (anhydrous HF), tetrafluoroborate, or lithium fluoroborate, which is a fluoride source. The generated electrolytic solution C is supplied to the treatment tank in the anodization treatment unit 10 through the pipe 63. In addition, the electrolytic solution C mixing tank 70 has an overflow pipe for liquid discharge treatment when the liquid in the tank overflows.
The supply control unit 71 controls the supply amount of the liquids G to I supplied to the electrolytic solution C mixing tank 70 under the control of the control circuit 14. For example, the supply control unit 71 includes a valve and a flow meter provided in the supply line of each liquid.
The liquid supply parts 72a to 72c are respectively connected to the electrolytic solution C mixing tank 70 via supply lines (piping). The liquid supply parts 72a to 72c respectively supply the liquids G to I to the electrolyte C mixing tank 70 through the supply line. The liquid supply parts 72a to 72c may each have a mechanism for pressure-feeding the liquids G to I from a container of the liquids G to I, for example.
The concentration sensor 73 monitors the concentration of the electrolyte C in the electrolyte C mixing tank 70 and transmits the result to the control circuit 14. The control circuit 14 controls the supply control unit 71 to adjust the concentration of the electrolytic solution C based on the result of the concentration monitoring. In addition, the concentration sensor 73 can also measure the resistance value of the electrolyte C.
The control circuit 14 controls the entire anode treatment device 1. More specifically, the control circuit 14 controls: the anodization processing unit 10, the electrolytic solution A supply unit 11, the electrolytic solution B supply unit 12, the electrolytic solution C supply unit 61, and the current supply unit 13.
5.1.2 The detailed structure of the anodizing treatment department
Next, an example of the detailed structure of the anodization treatment unit 10 will be described with reference to FIG. 25. FIG. 25 is a cross-sectional view of the anodization treatment section 10 in a state where electrolyte solutions A to C are supplied. The example of FIG. 25 shows the case where the anode treatment apparatus 1 has a configuration of "split electrode/multiple power supply/split treatment tank" as in the first embodiment.
As shown in FIG. 25, the anodization treatment unit 10 includes treatment tanks 101, 103 and 111, a water pan 102, upper electrodes 104 and 106, an insulator 105, a lower electrode 107, and a holding unit 108. The configurations of the treatment tanks 101 and 103, the water pan 102, the upper electrodes 104 and 106, the insulator 105, and the lower electrode 107 are the same as those in FIG. 2 of the first embodiment. As in the first embodiment, a current source 40 is connected to the upper electrode 104. A current source 41 is connected to the upper electrode 106.
The processing tank 111 has a cylindrical shape, for example. The upper end of the processing tank 111 is located under the upper electrodes 104 and 106. During the anodization treatment, the lower end of the treatment tank 111 is located on the upper surface of the semiconductor substrate 1000 (the surface that has not been anodized). The outer circumference of the processing tank 111 is surrounded by the side surface of the holding portion 108. That is, the area surrounded by the lower surface of the upper electrodes 104 and 106, the upper surface of the semiconductor substrate 1000, and the side surface of the holding portion 108 corresponds to the processing tank 111. In other words, the processing tank 111 is provided between the upper electrodes 104 and 106 and the processing tanks 101 and 103. To the processing tank 111, pipes 63 and 64 are connected. The pipe 63 is a liquid supply line to the processing tank 111. The pipe 64 is a liquid discharge line from the processing tank 111. In this embodiment, the pipe 63 is connected to the liquid supply line of the electrolyte C mixing tank 70. The pipe 64 is connected to the liquid recovery line of the electrolyte C mixing tank 70. In addition, plural pipes 63 and 64 may be provided respectively. Furthermore, the treatment tank 111 may be connected to a pipe for discharging waste liquid used when discharging the liquid in the treatment tank 111 as waste liquid.
The holding portion 108 of this embodiment has, for example, a cylindrical shape. The upper electrode 104 is connected to the inner surface near the upper end of the holding portion 108. In the examples of the first and second embodiments, the lower end of the holding portion 108 is provided with an L-shaped hook portion connected to the bottom surface of the semiconductor substrate 1000. In this case, the semiconductor substrate 000 is fixed by being sandwiched between the upper electrode and the hook. In this regard, in this example, the hook portion connected to the lower surface of the semiconductor substrate 000 is omitted. The holding part 108 includes a fixing part 113. The fixing portion 113 is provided on the side surface of the holding portion 108. During the anodization treatment, the semiconductor substrate 1000 is pushed against the fixed portion 113 from the lower side by the hydraulic pressure of the electrolytes A and B. The holding portion 108 and the fixing portion 113 are made of an insulating material having resistance to the electrolyte C. For example, in the holding portion 108 and the fixing portion 113, in order to improve the adhesion with the semiconductor substrate 1000, an elastic material may also be used. In addition, the cross-sectional shape of the fixing portion 113 is arbitrary. For example, the cross-sectional shape of the fixing portion 113 may be semicircular or rectangular.
In this embodiment, the hydraulic pressures of the electrolytes A and B are set to be higher than the hydraulic pressure of the electrolyte C. Therefore, during the anodization process, the upper surface of the semiconductor substrate 1000 is pushed against the fixed portion 113 by the hydraulic pressure of the electrolytes A and B.
The fixed portion 113 is not provided between the lower surface (the surface to be anodized) of the semiconductor substrate 1000 and the lower electrode 107. In other words, the lower surface of the semiconductor substrate 1000 is not in contact with the holding portion 108. Therefore, during the anodization process, there is no area that has not been anodized in the outer periphery of the lower surface of the semiconductor substrate 1000 (hereinafter, also referred to as "edge cut area"). Therefore, the porous layers 1100 and 1200 are formed on the entire surface of the lower surface of the semiconductor substrate 000.
5.1.3 The composition of the contact part
Next, an example of the structure of the fixing portion 113 will be described with reference to FIG. 26. FIG. 26 is a plan view of the fixing portion 113. FIG.
As shown in FIG. 26, the fixing portion 113 of this embodiment has a ring shape. During the anodization treatment, the entire upper outer periphery (edge) of the semiconductor substrate 1000 is in contact with the fixed portion 113. This suppresses the seepage of the liquid from the treatment tank 101 to the treatment tank 111.
5.2 Example 2
Next, the second example will be explained. In the second example, the configuration of the anodization treatment unit 10 that is different from the first example will be described with reference to FIG. 27. FIG. 27 is a cross-sectional view of the anodization treatment section 10 in a state where electrolyte solutions A to C are supplied. The example of FIG. 27, similar to the first example of the second embodiment, shows a case where the anode treatment apparatus 1 has a configuration of "same electrode/single power source/divided treatment tank".
The overall configuration of the anode treatment apparatus 1 of this example is the same as that of Fig. 24 of the first example of the fifth embodiment.
As shown in FIG. 27, the anodization treatment unit 10 includes treatment tanks 101, 103, and 111, a water pan 102, an upper electrode 104, a lower electrode 107, and a holding unit 108.
The treatment tanks 101 and 103, the water pan 102, the upper electrode 104, and the lower electrode 107 are the same as those in FIG. 8 of the first example of the second embodiment. As in the first example of the second embodiment, the current supply unit 13 (current source 40) is connected to the upper electrode 104.
In this example, the area surrounded by the lower surface of the upper electrode 104, the upper surface of the semiconductor substrate 1000, and the side surface of the holding portion 108 corresponds to the processing tank 111. In other words, the processing tank 111 is provided between the upper electrode 104 and the processing tanks 101 and 103.
5.3 Example 3
Next, the third example will be explained. In the third example, the configuration of the anodizing apparatus 1 different from the first and second examples will be described with reference to FIGS. 28 and 29. Figure 28 is a block diagram of the anodizing device. FIG. 29 is a cross-sectional view of the anodization treatment section 10 in a state where electrolyte solutions A and C are supplied. The example of FIG. 29, similar to the second example of the second embodiment, shows a case where the anode treatment apparatus 1 has a configuration of "split electrode/single power source/same treatment tank".
As shown in FIG. 28, the anode treatment apparatus 1 of this example has the structure of the first example of the fifth embodiment (FIG. 24), and the structure of the electrolytic solution B supply unit 12 and the pipes 16 and 17 are omitted. The electrolytic solution A mixing tank 20 of the electrolytic solution A supply unit 11 is connected to the treatment tank 101 in the anodization treatment unit 10 via a pipe 15.
As shown in FIG. 29, the anodization treatment unit 10 includes treatment tanks 101 and 111, a water pan 102, upper electrodes 104 and 106, an insulator 105, a lower electrode 107, and a holding unit 108.
The treatment tank 101, the water pan 102, the upper electrodes 104 and 106, the insulator 105, and the lower electrode 107 are the same as those in FIG. 11 of the second example of the second embodiment. As in the second example of the second embodiment, in this example, the upper electrode 104 is connected to the current source 40 through the switch SW1. In addition, the upper electrode 106 is connected to the current source 40 through the switch SW2.
In this example, the area surrounded by the lower surface of the upper electrodes 104 and 106, the upper surface of the semiconductor substrate 1000, and the side surface of the holding portion 108 corresponds to the processing tank 111. In other words, the processing tank 111 is provided between the upper electrodes 104 and 106 and the processing tank 101.
5.4 Example 4
Next, the fourth example will be explained. In the fourth example, the configuration of the anodization treatment section 10 that is different from the third example will be described with reference to FIG. 30. FIG. 30 is a cross-sectional view of the anodization treatment section 10 in a state where electrolyte solutions A to C are supplied. The example of FIG. 30, similar to the third example of the second embodiment, shows a case where the anode treatment apparatus 1 has a configuration of "divided electrodes/multiple power sources/same treatment tank".
The overall configuration of the anode treatment apparatus 1 of this example is the same as that of Fig. 28 of the third example of the fifth embodiment.
As shown in FIG. 30, the anodization treatment unit 10 includes treatment tanks 101 and 111, a water pan 102, upper electrodes 104 and 106, an insulator 105, a lower electrode 107, and a holding unit 108.
The treatment tank 101, the water pan 102, the upper electrodes 104 and 106, the insulator 105, and the lower electrode 107 are the same as those in the third example of the second embodiment in FIG. 13. As in the third example of the second embodiment, the current source 40 is connected to the upper electrode 104. A current source 41 is connected to the upper electrode 106.
The configuration of the treatment tank 111 is the same as that of FIG. 29 in the third example of the fifth embodiment.
5.5 Related to the effect of this implementation type
According to the configuration related to this embodiment, the same effects as the first to fourth embodiments can be obtained.
Furthermore, according to the configuration of this embodiment, the anodizing device can supply electrolyte between the upper electrode and the semiconductor substrate. Thereby, the contact area between the upper electrode and the semiconductor substrate can be suppressed. That is, it is possible to reduce the metal contamination of the semiconductor substrate caused by the upper electrode.
Furthermore, according to the configuration of this embodiment, by supplying the electrolyte solution between the upper electrode and the semiconductor substrate, it is possible to suppress poor conduction between the upper electrode and the semiconductor substrate.
6. The sixth form of implementation
Next, the sixth embodiment is explained. In the sixth embodiment, the configuration of the electrolytic solution C supply unit 61 that is different from the first example of the fifth embodiment will be described.
6.1 Overall composition
The overall configuration of the anode treatment apparatus 1 will be described with reference to FIG. 31. FIG. 31 is a block diagram of the anodizing device 1. As shown in FIG.
As shown in FIG. 31, the anode treatment apparatus 1 of this example includes an anodization treatment unit 10, an electrolyte solution A supply unit 11, an electrolyte solution B supply unit 12, an electrolyte solution C supply unit 61, a current supply unit 13, and a control circuit 14. And the concentration sensor 91.
The anodization treatment unit 10, the electrolytic solution A supply unit 11, the electrolytic solution B supply unit 12, the current supply unit 13, and the control circuit 14 are the same as those in FIG. 24 of the first example of the fifth embodiment.
The electrolytic solution C supply unit 61 does not have a circulation mechanism, and supplies the unused electrolytic solution C to the anodization treatment unit 10. That is, the electrolytic solution C supply unit 61 mixes the three types of liquids G to I in the electrolytic solution C mixing tank 70 to produce the electrolytic solution C.
The pipe 64 is not connected to the electrolyte solution C mixing tank 70, and the liquid used in the processing unit 111 is discharged as a waste liquid.
The concentration sensor 91 monitors the concentration of the discharged liquid from the pipe 64 and transmits the result to the control circuit 14. For example, in the anode treatment device 1 of this example, the fresh liquid supply and discharge treatment of the electrolytic solution C is repeatedly performed every time the anodization treatment is performed. However, based on the monitoring result of the concentration sensor 91, when it is judged that the electrolyte C in the treatment tank 111 can be reused in the next anodization treatment, the anode treatment device 1 can reuse the electrolyte C in the treatment tank 111. All or part of it. When a part is reused, the electrolytic solution C of the insufficient portion is supplied by the electrolytic solution C supply unit 61.
6.2 Effects related to this implementation type
This embodiment can be applied to the fifth embodiment.
7. The seventh implementation type
Next, the seventh embodiment is explained. In the seventh embodiment, four examples will be described where two types of electrolyte are supplied between the upper electrode and the upper surface of the semiconductor substrate. The following description will focus on the differences from the fifth and sixth embodiments.
7.1 Example 1
7.1.1 Overall composition
First, the overall configuration of the anode treatment apparatus 1 of the first example will be described with reference to FIG. 32. Figure 32 is a block diagram of the anodizing device. In addition, in the example of FIG. 32, the details of the constituent elements of the electrolytic solution A supply unit 11 and the electrolytic solution B supply unit 12 are omitted.
As shown in FIG. 32, the anode treatment apparatus 1 includes: an anodization treatment unit 10, an electrolyte solution A supply unit 11, an electrolyte solution B supply unit 12, an electrolyte solution C supply unit 61, an electrolyte solution D supply unit 62, and a current supply unit 13 and control circuit 14.
The anodization treatment unit 10 has two treatment tanks between the upper electrode and the semiconductor substrate 1000. The details of the anodization treatment section 10 will be described later.
The electrolytic solution A supply unit 11, the electrolytic solution B supply unit 12, and the current supply unit 13 are the same as those in FIG. 1 of the first embodiment.
The configuration of the electrolytic solution C supply unit 61 is the same as that of FIG. 24 in the first example of the fifth embodiment. The electrolytic solution C mixing tank 70 is connected to the anodization treatment unit 10 through pipes 65 and 66. That is, the electrolytic solution C supply unit 61 supplies the electrolytic solution C to the anodization treatment unit 10 through the pipe 65, and the liquid is recovered by the anodization treatment unit 10 through the pipe 66.
The electrolytic solution D supply unit 62 supplies the electrolytic solution D to the treatment tank provided between the upper electrode in the anodized conversion treatment section 10 and the upper surface of the semiconductor substrate 1000 (the non-anodized surface). In addition, the electrolytic solution D supply unit 62 has a mechanism (for example, a pump, etc.) not shown for adjusting the hydraulic pressure of the electrolytic solution D supplied to the treatment tank. The electrolytic solution D is, for example, a solution that hardly reacts silicon with the semiconductor substrate 1000 during the anodization process. In addition, in order to suppress metal contamination of the semiconductor substrate 1000, the electrolyte solution D is preferably one that does not contain metal elements. The electrolyte D may be the same as or different from the electrolyte C. Hereinafter, the case where the electrolyte solution D has a different concentration (resistance value) from the electrolyte solution C will be described. Hereinafter, the resistance value of the electrolyte solution D may be higher than the resistance value of the electrolyte solution C, or may be lower. In consideration of the material of the upper electrodes 104 and 106, the effect of the combination of the electrolyte solutions A to D on the anodization treatment (the influence on the electric field), etc., the resistance values of the electrolyte solutions C and D are adjusted. The electrolytic solution D supply unit 62 of this embodiment has a function of circulating the electrolytic solution D in the anodization treatment section 10 and the electrolytic solution D mixing tank 80. In other words, the electrolytic solution D supply unit 62 can adjust the composition of the liquid recovered by the anodization treatment unit 10 and supply it to the anodization treatment unit 10 again.
The electrolytic solution D supply unit 62 includes: an electrolytic solution D mixing tank 80, a supply control unit 81, a plurality of liquid supply units 82 (in the example of FIG. 24, three liquid supply units 82a to 82c), and a concentration sensor 83 .
The electrolyte D mixing tank 80 is a tank for mixing a plurality of liquids to produce electrolyte D. The electrolytic solution D supply unit 62 can mix the liquid recovered by the anodizing treatment unit 10 through the pipe 64 as a raw material, and three kinds of liquids J to L, and perform the generation of the electrolytic solution D and the concentration adjustment. In addition, the liquid used for the generation of the electrolytic solution D is not limited to three types. In addition, materials other than liquid may be used for the generation of electrolyte D. Like the electrolyte solution C, for example, the electrolyte solution D may be a diluted HF aqueous solution that hardly reacts with the semiconductor substrate 1000 during the anodization treatment, may be a diluted HCl aqueous solution, or may be a water-insoluble organic electrolyte solution. For example, the raw material of electrolyte D can also be selected from at least any one of non-water-soluble electrolyte, acetonitrile, propylene carbonate, or dimethylformamide. In addition, the raw material of the electrolyte solution D can also be selected from at least any one of anhydrous HF (anhydrous HF), tetrafluoroborate, or lithium fluoroborate, which is a fluoride source. The generated electrolytic solution D is supplied to one of the treatment tanks of the anodization treatment unit 10 through the pipe 63. In addition, the electrolyte solution D mixing tank 80 has an overflow pipe for liquid discharge treatment when the liquid in the tank overflows.
The supply control unit 81 controls the supply amounts of the liquids J to L supplied to the electrolyte solution D mixing tank 80 under the control of the control circuit 14. For example, the supply control unit 81 includes a valve and a flow meter provided in the supply line of each liquid.
The liquid supply parts 82a to 82c are respectively connected to the electrolyte solution D mixing tank 80 via supply lines. The liquid supply parts 82a to 82c respectively supply the liquids J to L to the electrolyte solution D mixing tank 80 through the supply line. The liquid supply parts 82a to 82c may each have a mechanism for pressure-feeding the liquids J to L from a container of the liquids J to L, for example.
The concentration sensor 83 monitors the concentration of the electrolyte D in the electrolyte D mixing tank 80 and transmits the result to the control circuit 14. The control circuit 14 controls the supply control unit 81 to adjust the concentration of the electrolytic solution D based on the result of the concentration monitoring. In addition, the concentration sensor 83 can also measure the resistance value of the electrolyte D.
The control circuit 14 controls the entire anode treatment device 1. More specifically, the control circuit 14 controls: the anodization treatment unit 10, the electrolyte solution A supply unit 11, the electrolyte solution B supply unit 12, the electrolyte solution C supply unit 61, the electrolyte solution D supply unit 62, and the current supply unit 13 .
7.1.2 The detailed structure of the anodizing treatment department
Next, an example of the detailed structure of the anodization treatment unit 10 will be described with reference to FIG. 33. FIG. 33 is a cross-sectional view of the anodization treatment section 10 in a state where electrolyte solutions A to D are supplied. The example of FIG. 33 shows a case where the anode treatment apparatus 1 has a configuration of "split electrode/multiple power source/split treatment tank" as in the first embodiment.
As shown in FIG. 33, the anodization treatment unit 10 includes treatment tanks 101, 103, 111, and 112, a water pan 102, upper electrodes 104 and 106, an insulator 105, a lower electrode 107, and a holding part 108. The configurations of the treatment tanks 101 and 103, the water pan 102, the upper electrodes 104 and 106, the insulator 105, and the lower electrode 107 are the same as those in FIG. 2 of the first embodiment. As in the first embodiment, a current source 40 is connected to the upper electrode 104. A current source 41 is connected to the upper electrode 106.
In this example, the upper end of the processing tank 111 is located below the upper electrode 104. The area surrounded by the lower surface of the upper electrode 104 and the upper surface of the semiconductor substrate 1000, the side surface of the holding portion 108 and the side surface of the processing bath 112 corresponds to the processing bath 111. In other words, the treatment tank 111 is provided between the upper electrode 104 and the treatment tank 101.
The processing tank 112 has a cylindrical shape, for example. The processing tank 112 is arranged concentrically with the processing tank 111, for example. The inner diameter of the processing tank 112 is smaller than the inner diameter of the processing tank 111. For example, the inner diameter of the treatment tank 112 is approximately the same as that of the upper electrode 106. The treatment tank 112 corresponds to the formation of the porous layer 1100. The upper end of the processing tank 112 is connected to the lower side of the upper electrode 106. The lower end of the processing tank 112 is located near the upper surface of the semiconductor substrate 1000 and is not connected to the upper surface of the semiconductor substrate 1000. The area surrounded by the lower surface of the upper electrode 106, the upper surface of the semiconductor substrate 1000, and the side surface of the processing bath 112 corresponds to the processing bath 112. In other words, the treatment tank 112 is provided between the upper electrode 106 and the treatment tank 103. A gap GP3 is provided between the lower end of the processing tank 112 and the semiconductor substrate 1000. The side surface of the treatment tank 112 is made of, for example, an insulating material having resistance to the electrolytic solutions C and D. In addition, the treatment tank 112 may be made of the same material as the holding portion 108. To the processing tank 103, pipes 65 and 66 are connected. The pipe 65 is a liquid supply line to the processing tank 112. The pipe 66 is a liquid discharge line from the processing tank 112. In this embodiment, the pipe 65 is connected to the liquid supply line of the electrolyte C mixing tank 70. The pipe 66 is connected to the liquid recovery line of the electrolytic solution C mixing tank 70. In addition, multiple pipes 65 and 66 may be provided. Furthermore, the treatment tank 112 may be connected to a pipe for discharging waste liquid used when discharging the liquid in the treatment tank 112 as waste liquid.
In this embodiment, the hydraulic pressures of the electrolytes A and B are set to be higher than the hydraulic pressures of the electrolytes C and D (the hydraulic pressure of the electrolyte A+B>the hydraulic pressure of the electrolyte C+D). Therefore, during the anodization process, the upper surface of the semiconductor substrate 1000 is pushed against the fixed portion 113 by the hydraulic pressure of the electrolytes A and B.
In addition, the hydraulic pressure of the electrolyte C is set to be higher than the hydraulic pressure of the electrolyte D (the hydraulic pressure of the electrolyte C> the hydraulic pressure of the electrolyte D). Thereby, during the anodization treatment, the electrolytic solution C flows into the treatment tank 111 from the treatment tank 112 through the gap GP3. For example, when the electrolyte solutions A to D are supplied, the hydraulic pressure of the electrolyte solutions A to D may be in the relationship of electrolyte A>electrolyte B>electrolyte C>electrolyte D.
7.2 Case 2
Next, the second example will be explained. In the second example, the configuration of the anodization treatment unit 10 that is different from the first example will be described with reference to FIG. 34. FIG. 34 is a cross-sectional view of the anodization treatment unit 10 in a state where electrolyte solutions A to D are supplied. The example of FIG. 34, similar to the first example of the second embodiment, shows the case where the anode treatment apparatus 1 has a "same electrode/single power source/divided treatment tank" configuration.
The overall configuration of the anode treatment apparatus 1 of this example is the same as that shown in Fig. 32 of the first example of the seventh embodiment.
As shown in FIG. 34, the anodization treatment section 10 includes treatment tanks 101, 103, 111, and 112, a water pan 102, an upper electrode 104, a lower electrode 107, and a holding section 108.
The treatment tanks 101 and 103, the water pan 102, the upper electrode 104, and the lower electrode 107 are the same as those in FIG. 8 of the first example of the second embodiment. As in the first example of the second embodiment, current is supplied to the upper electrode 104 from the current supply unit 13 (current source 40).
In this example, for example, the inner diameter of the processing tank 111 is substantially the same as the inner diameter of the processing tank 103. In other words, the processing tank 111 is provided between the area of the upper electrode 104 facing the processing tank 101 and the processing tank 101. The treatment tank 112 is provided between the area of the upper electrode 104 facing the treatment tank 103 and the treatment tank 103.
7.3 Example 3
Next, the third example will be explained. In the third example, the configuration of the anodizing apparatus 1 different from the first and second examples will be described with reference to FIGS. 35 and 36. Figure 35 is a block diagram of an anodizing device. FIG. 36 is a cross-sectional view of the anodization treatment section 10 in a state where electrolyte solutions A, C, and D are supplied. The example of FIG. 36, similar to the second example of the second embodiment, shows a case where the anode treatment apparatus 1 has a "split electrode/single power source/same treatment tank" configuration.
As shown in FIG. 35, the anode treatment apparatus 1 of this example has the structure of the first example of the seventh embodiment (FIG. 32), and the structure of the electrolytic solution B supply unit 12 and the pipes 16 and 17 are omitted. The electrolytic solution A mixing tank 20 of the electrolytic solution A supply unit 11 is connected to the processing tank 101 via a pipe 15.
As shown in FIG. 36, the anodization treatment unit 10 includes treatment tanks 101, 111, and 112, a water pan 102, upper electrodes 104 and 106, an insulator 105, a lower electrode 107, and a holding part 108.
The treatment tank 101, the water pan 102, the upper electrodes 104 and 106, the insulator 105, and the lower electrode 107 are the same as those in FIG. 11 of the second example of the second embodiment. As in the second example of the second embodiment, in this example, the upper electrode 104 is connected to the current source 40 through the switch SW1. In addition, the upper electrode 106 is connected to the current source 40 through the switch SW2.
In this example, the upper end of the processing tank 111 is located below the upper electrode 104. The area surrounded by the lower surface of the upper electrode 104 and the upper surface of the semiconductor substrate 1000, the side surface of the holding portion 108 and the side surface of the processing bath 112 corresponds to the processing bath 111. In addition, the upper end of the processing tank 112 is located below the upper electrode 106. The area surrounded by the lower surface of the upper electrode 106, the upper surface of the semiconductor substrate 1000, and the side surface of the processing bath 112 corresponds to the processing bath 112. In other words, the processing tank 111 is provided between the upper electrode 104 and the area of the processing tank 101 facing the upper electrode 104. The processing tank 112 is provided between the upper electrode 106 and the area of the processing tank 101 facing the upper electrode 106.
7.4 Example 4
Next, the fourth example will be explained. In the fourth example, the configuration of the anodization treatment unit 10 that is different from the third example will be described with reference to FIG. 37. FIG. 37 is a cross-sectional view of the anodization treatment section 10 in a state where electrolyte solutions A, C, and D are supplied. The example of FIG. 37, similar to the third example of the second embodiment, shows a case where the anode treatment apparatus 1 has a configuration of "divided electrodes/multiple power sources/same treatment tank".
The overall configuration of the anode treatment apparatus 1 of this example is the same as that shown in Fig. 35 of the third example of the seventh embodiment.
As shown in FIG. 37, the anodization treatment unit 10 includes treatment tanks 101, 111, and 112, a water pan 102, upper electrodes 104 and 106, an insulator 105, a lower electrode 107, and a holding part 108.
The treatment tank 101, the water pan 102, the upper electrodes 104 and 106, the insulator 105, and the lower electrode 107 are the same as those in the third example of the second embodiment in FIG. 13. As in the third example of the second embodiment, the current source 40 is connected to the upper electrode 104. A current source 41 is connected to the upper electrode 106.
The configuration of the treatment tanks 111 and 112 is the same as that of FIG. 36 in the third example of the seventh embodiment.
7.5 Effects related to this implementation type
According to the configuration related to this embodiment, the same effect as the sixth embodiment can be obtained.
Furthermore, in the case of a configuration related to this embodiment, between the upper electrode and the semiconductor substrate, electrolyte solutions C and D having different resistance values can be supplied to the center and outer peripheral portions of the upper surface of the semiconductor substrate. Furthermore, in the case of the first, third, and fourth examples, it is possible to supply the electrolyte solutions C and D corresponding to the amount of current supplied to the two upper electrodes 106 and 104, respectively. Thereby, in the anodization treatment, the controllability of forming the porous layers 1100 and 1200 can be improved. Furthermore, the voltage control range of the upper electrode can be further expanded. Furthermore, by adjusting the resistance values of the electrolytes C and D, power consumption can be reduced.
8. The 8th Implementation Type
Next, the eighth embodiment will be explained. In the eighth embodiment, four examples will be described with respect to the configurations of the electrolytic solution C supply unit 61 and the electrolytic solution D supply unit 62 that are different from the first example of the seventh embodiment. Hereinafter, the description will be focused on differences from the first example of the seventh embodiment.
8.1 The first example
First, the anode treatment apparatus 1 of the first example will be described with reference to FIG. 38. FIG. 38 is a block diagram of the anodizing device 1. In the first example, unlike the first embodiment, the case where the electrolyte solution C supply unit 61 and the electrolyte solution D supply unit 62 do not have a circulation mechanism will be described.
As shown in FIG. 38, the anode treatment apparatus 1 of this example includes an anodization treatment unit 10, an electrolyte solution A supply unit 11, an electrolyte solution B supply unit 12, an electrolyte solution C supply unit 61, an electrolyte solution D supply unit 62, The current supply unit 13, the control circuit 14, and the concentration sensors 91 and 92.
The anodization treatment unit 10, the electrolytic solution A supply unit 11, the electrolytic solution B supply unit 12, the current supply unit 13, and the control circuit 14 are the same as those in FIG. 32 of the first example of the seventh embodiment.
The electrolytic solution C supply unit 61 does not have a circulation mechanism, and supplies the unused electrolytic solution C to the anodization treatment unit 10. That is, the electrolytic solution C supply unit 61 mixes the three types of liquids G to I in the electrolytic solution C mixing tank 70 to produce the electrolytic solution C.
The electrolytic solution D supply unit 62, like the electrolytic solution C supply unit 61, does not have a circulation mechanism, and supplies the unused electrolytic solution D to the anodization treatment unit 10. That is, the electrolytic solution D supply unit 62 mixes the three types of liquids J to L in the electrolytic solution D mixing tank 80 to produce the electrolytic solution D.
The pipe 64 is not connected to the electrolyte solution D mixing tank 80, and the liquid used in the processing unit 111 is discharged as a waste liquid.
The pipe 66 is not connected to the electrolyte solution C mixing tank 70, and the liquid used in the processing unit 112 is discharged as a waste liquid.
The concentration sensor 91 monitors the concentration of the discharged liquid from the pipe 66 and transmits the result to the control circuit 14. The concentration sensor 92 monitors the concentration of the discharged liquid from the pipe 64 and transmits the result to the control circuit 14. For example, in the anode treatment device 1 of this example, the fresh liquid supply and discharge treatment of the electrolytes C and D are repeatedly performed every time the anodization treatment is performed. However, based on the monitoring result of the concentration sensor 91, when it is judged that the electrolyte C in the treatment tank 112 can be reused in the next anodization treatment, the anode treatment device 1 can reuse the electrolyte C in the treatment tank 112. All or part of it. Similarly, based on the monitoring result of the concentration sensor 92, when it is judged that the electrolyte D in the treatment tank 111 can be reused in the next anodization treatment, the anode treatment device 1 can reuse the electrolyte in the treatment tank 111. All or part of D. When a part is reused, the insufficient electrolyte solutions C and D are supplied by the electrolyte solution C supply unit 61 and the electrolyte solution D supply unit 62, respectively.
8.2 Example 2
Next, the anode treatment apparatus 1 of the second example will be described with reference to FIG. 39. FIG. 39 is a block diagram of the anodizing device 1. In the second example, a case where the electrolytic solution C supply unit 61 and the electrolytic solution D supply unit 62 circulate the drain of the treatment tank 111 will be described.
As shown in FIG. 39, the anode treatment apparatus 1 of this example includes an anodization treatment unit 10, an electrolyte solution A supply unit 11, an electrolyte solution B supply unit 12, an electrolyte solution C supply unit 61, an electrolyte solution D supply unit 62, The current supply unit 13 and the control circuit 14.
The anodization treatment unit 10, the electrolytic solution A supply unit 11, the electrolytic solution B supply unit 12, the current supply unit 13, and the control circuit 14 are the same as those in FIG. 32 of the first example of the seventh embodiment.
The electrolytic solution C supply unit 61 is the same as that shown in FIG. 32 of the first example of the seventh embodiment. In this example, the electrolytic solution C supply unit 61 recovers the liquid from the processing tank 111 through the pipe 64. The electrolytic solution C supply unit 61 can mix the liquid (a mixed solution of the electrolytic solution C and the electrolytic solution D) recovered by the processing unit 111 through the pipe 64 with three kinds of liquids G to I to perform the generation of the electrolytic solution C and the concentration adjustment. In addition, in this example, the pipe 66 is omitted, but the pipe 66 may be omitted and used as a waste liquid discharge line of the treatment tank 112.
The electrolytic solution D supply unit 62 is the same as that shown in FIG. 32 of the first example of the seventh embodiment. The electrolytic solution D supply unit 62, like the electrolytic solution C supply unit 61, collects liquid from the treatment tank 111 through the pipe 64.
8.3 Example 3
Next, the anode treatment apparatus 1 of the third example will be described with reference to FIG. 40. FIG. 40 is a block diagram of the anodizing device 1. In the third example, a case where the electrolytic solution C supply unit 61 does not have a circulation mechanism and the electrolytic solution D supply unit 62 has a circulation mechanism will be described.
As shown in FIG. 40, the anode treatment apparatus 1 of this example includes an anodization treatment unit 10, an electrolyte solution A supply unit 11, an electrolyte solution B supply unit 12, an electrolyte solution C supply unit 61, an electrolyte solution D supply unit 62, The current supply unit 13, the control circuit 14, and the concentration sensor 91.
The anodization treatment unit 10, the electrolyte solution A supply unit 11, the electrolyte solution B supply unit 12, the electrolyte solution D supply unit 62, the current supply unit 13, and the control circuit 14, and Fig. 32 of the first example of the seventh embodiment same.
The electrolytic solution C supply unit 61 and the concentration sensor 91 are the same as those in FIG. 38 of the first example of the eighth embodiment.
8.4 Example 4
Next, the anode treatment apparatus 1 of the fourth example will be described with reference to FIG. 41. FIG. 41 is a block diagram of the anodizing device 1. In the fourth example, a case where the electrolyte solution C supply unit 61 has a circulation mechanism and the electrolyte solution D supply unit 62 does not have a circulation mechanism will be described.
As shown in FIG. 41, the anode treatment apparatus 1 of this example includes an anodization treatment unit 10, an electrolyte solution A supply unit 11, an electrolyte solution B supply unit 12, an electrolyte solution C supply unit 61, an electrolyte solution D supply unit 62, The current supply unit 13 and the control circuit 14.
The anodization treatment unit 10, the electrolytic solution A supply unit 11, the electrolytic solution B supply unit 12, the current supply unit 13, and the control circuit 14 are the same as those in FIG. 32 of the first example of the seventh embodiment.
The electrolytic solution C supply unit 61 is the same as that shown in FIG. 39 of the second example of the eighth embodiment. In this example, the electrolytic solution C supply unit 61 recovers the liquid from the processing tank 111 through the pipe 64. In this example, the electrolyte C supply unit 61 will be described in the case where the liquid (mixed liquid of the electrolyte C and the electrolyte D) is recovered from the treatment tank 111 through the pipe 64, but the electrolyte C supply unit 61 may also be used from the treatment tank. 112 recovers the liquid (electrolyte C) through the pipe 66. In this case, for example, the pipe 64 connected to the treatment tank 111 is used as a waste liquid discharge line of the treatment tank 111.
The electrolytic solution D supply unit 62 is the same as that shown in FIG. 38 of the first example of the eighth embodiment. In addition, when the electrolytic solution C supply unit 61 recovers the liquid (electrolyte C) from the treatment tank 112 through the pipe 66, that is, when the pipe 66 is used as a waste liquid discharge line, the anode treatment device 1 may also have a second The concentration sensor 92 described in the first example of 6 implementation types. According to the monitoring result of the concentration sensor 92, when it is judged that the electrolyte D in the treatment tank 111 can be reused in the next anodization treatment, the anode treatment device 1 can reuse all of the electrolyte D in the treatment tank 111 Or part of it.
8.5 Effects related to this implementation type
The configuration related to this embodiment can be applied to the seventh embodiment.
9. The 9th Implementation Type
Next, the ninth embodiment is explained. In the ninth embodiment, two examples will be described with respect to the structure of the holding portion 108 that is different from the fifth and seventh embodiments. The following description will focus on the differences from the fifth and seventh embodiments.
9.1 The first example
First, the first example will be explained. In the first example, the case where the holding portion 108 has two fixed portions 113a and 113b arranged up and down will be described with reference to FIGS. 42 to 45. FIG. 42 is a cross-sectional view of the anodization treatment section 10 in a state where electrolyte solutions A to C are supplied. Fig. 43 is a plan view of the fixing portion 113a. FIG. 44 and FIG. 45 are enlarged views of the area RA in FIG. 42. FIG. 44 shows the positions of the fixing portions 113a and 113b when the semiconductor substrate 1000 is installed in the anode treatment apparatus 1. As shown in FIG. FIG. 45 shows the positions of the fixing portions 113a and 113b during the anodization process.
As shown in FIG. 42, the anodization treatment unit 10 includes treatment tanks 101, 103, and 111, a water pan 102, upper electrodes 104 and 106, an insulator 105, a lower electrode 107, and a holding part 108. The treatment tanks 101, 103, and 111, the water pan 102, the upper electrodes 104 and 106, the insulator 105, and the lower electrode 107 are the same as the first example of the seventh embodiment. In addition, the configuration of the anodized conversion treatment section 10 may be any of the configurations described in the fifth and seventh embodiments.
The holding portion 108 includes a plurality of fixed portions 113a and 113b. The cross-sectional shape of the fixing portions 113a and 113b may be triangular, for example. The cross-sectional shape of the fixing portions 113a and 113b is arbitrary. The cross-sectional shape of the fixing portions 113a and 113b is preferably a shape that can hold the semiconductor substrate 1000 and has a smaller contact surface with the semiconductor substrate 1000.
The fixing portion 113 a and the fixing portion 113 b are arranged at positions of different heights on the side surface of the holding portion 108. For example, the fixed portion 113a is arranged closer to the upper end side of the holding portion 108 (closer to the upper electrode 104 side) than the fixed portion 113b. The fixed portions 113a and 113b can be in a state that protrudes from the inner surface of the holding portion 108 (hereinafter referred to as "protruding state") and a state that is drawn into the interior of the holding portion 108 (hereinafter referred to as "drawn state") Way to move.
As shown in FIG. 43, for example, the three fixing portions 113a are arranged at positions rotated by 120° with respect to the center of the holding portion 108, respectively. In addition, the example of FIG. 43 shows a case where the fixed portion 113a is in a protruding state. The fixing portion 113a has, for example, a triangular shape when viewed from above. In addition, the fixing portion 113a may be in the shape of a cone or a quadrangular pyramid, for example. In addition, the number of fixed portions 113a is arbitrary. At the time of the anodization treatment, at least three fixing portions 113a may be arranged so that the semiconductor substrate 1000 can be fixed.
The fixed portion 113b is also the same as the fixed portion 113a. In addition, the shape, number, and arrangement of the fixing portion 113b may be different from the fixing portion 113a.
Next, the operation of the fixing portions 113a and 113b will be described.
As shown in FIG. 44, for example, when the semiconductor substrate 1000 is installed inside the holding portion 108, the fixed portion 113a is in a drawn-in state, and the fixed portion 113b is in a protruding state. Thereby, when the semiconductor substrate 1000 is installed from above, the fixing portion 113b holds the lower surface of the semiconductor substrate 1000 and prevents the semiconductor substrate 1000 from falling.
As shown in FIG. 45, for example, during the anodization process, the fixed portion 113a is in a protruding state, and the fixed portion 113b is in a drawn-in state. Thereby, the semiconductor substrate 1000 is pushed against the fixing portion 113a from the lower side, and its position is fixed.
9.2 Example 2
Next, the second example will be explained. In the second example, the use of an elastic material in the holding portion 108 will be described with reference to FIG. 46. FIG. 46 is a conceptual diagram showing the arrangement of the holding portion 108 and the semiconductor substrate 1000.
As shown in FIG. 46, when an elastic material is used for the holding portion 108, if the tip of the semiconductor substrate 1000 is crimped to the holding portion 108, the sealing property between the holding portion 108 and the semiconductor substrate 1000 is improved. In addition, the holding portion 108 may be connected to the entire outer periphery of the semiconductor substrate 1000 or may be connected to a part of the outer periphery.
9.3 Effects related to this implementation type
The configuration of this embodiment can be applied to the fifth to eighth embodiment.
In addition, the first example and the second example of this embodiment may be combined.
10. Modifications
Related to the anodizing device of the aforementioned embodiment, it includes: a first treatment tank (101) that can perform anodization of substrates, and a second treatment tank (101) that is set inside the first treatment tank and can perform anodization of substrates (103), the first electrolyte supply unit (12) that can supply the first electrolyte to the first treatment tank, and the second electrolyte supply unit (11) that can supply the second electrolyte to the second treatment tank, can hold The holding portion (108) of the substrate is provided with a first electrode (104) above the first processing tank or the second processing tank, and a second electrode (107) provided below the first processing tank and the second processing tank.
By applying the aforementioned embodiment, a plurality of porous layers with different film qualities can be formed on the surface of the substrate.
In addition, the mode of implementation is not limited to the above-described embodiment, and various modifications can be made.
For example, in the foregoing embodiment, the anodizing device that can form two different types of porous layers on the center and the outer periphery of the semiconductor substrate surface is described, but it can also be used to form more than three types of different porous layers. Layer anodizing device. More specifically, in the anode treatment apparatus 1, for example, three or more upper electrodes may be provided concentrically, and three or more treatment tanks may be provided concentrically, for example.
In addition, the "connection" in the foregoing implementation type includes a state of indirect connection with some other intermediary.
In addition, the "substantially the same" in the foregoing embodiment includes an error to the extent that it does not affect the formation of the porous layer when the anodization process is performed.
Several implementation types of the present invention have been described, but these implementation types are only used as examples and are not intended to limit the scope of the invention. These novel implementation forms can be implemented in various other forms, and various omissions, substitutions, and changes can be made within the scope that does not deviate from the gist of the invention. These embodiments or their modifications are included in the scope or gist of the invention, and are included in the invention described in the scope of the patent application and its equivalent scope.
