TW202134393A - Chemical mechanical polishing slurry and a method of use thereof - Google Patents

Chemical mechanical polishing slurry and a method of use thereof Download PDF

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Publication number
TW202134393A
TW202134393A TW109145995A TW109145995A TW202134393A TW 202134393 A TW202134393 A TW 202134393A TW 109145995 A TW109145995 A TW 109145995A TW 109145995 A TW109145995 A TW 109145995A TW 202134393 A TW202134393 A TW 202134393A
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Taiwan
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chemical mechanical
mechanical polishing
titanium dioxide
polishing liquid
aluminum oxide
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TW109145995A
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Chinese (zh)
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馬健
荊建芬
姚穎
周靖宇
楊俊雅
黃悅銳
蔡鑫元
陸弘毅
王雨春
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大陸商安集微電子(上海)有限公司
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    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09G—POLISHING COMPOSITIONS; SKI WAXES
    • C09G1/00—Polishing compositions
    • C09G1/02—Polishing compositions containing abrasives or grinding agents
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00—Materials not provided for elsewhere
    • C09K3/14—Anti-slip materials; Abrasives
    • C09K3/1436—Composite particles, e.g. coated particles
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76801—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing
    • H01L21/76819—Smoothing of the dielectric
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
    • H01L21/7684—Smoothing; Planarisation

Abstract

The present invention discloses a chemical mechanical polishing slurry, comprising composite abrasive particles, an oxidizer and water, wherein the composite abrasive particles are two or more metal oxides selected from ceria, titanium dioxide, manganese dioxide and aluminum oxide which are coated with each other. The chemical mechanical polishing slurry in the present invention has a high removal rate of carbon-containing materials, and can be used for chemical mechanical polishing of carbon-containing materials.

Description

化學機械拋光液及其使用方法Chemical mechanical polishing liquid and its use method

本發明涉及化學機械拋光領域，具體涉及一種化學機械拋光液及其使用方法。The invention relates to the field of chemical mechanical polishing, in particular to a chemical mechanical polishing liquid and a method of use thereof.

隨著半導體技術的不斷發展，大型積體電路互連層的不斷增加，導電層和絕緣介質層的平坦化技術變得尤為關鍵。二十世紀80年代，由IBM公司首創的化學機械拋光(CMP)技術被認為是目前全域平坦化的最有效的方法。化學機械拋光(CMP)由化學作用、機械作用以及這兩種作用結合而成。化學機械拋光的操作儀器通常由一個帶有拋光墊的研磨台，及一個用於承載晶片的研磨頭組成。其中研磨頭固定住晶片，然後將晶片的正面壓在拋光墊上。當進行化學機械拋光時，研磨頭在拋光墊上線性移動或是沿著與研磨台一樣的運動方向旋轉。與此同時，將含有研磨劑的漿液滴到拋光墊上，漿液因離心作用平鋪在拋光墊上。晶片表面在機械和化學的雙重作用下實現全域平坦化。With the continuous development of semiconductor technology and the continuous increase of interconnection layers of large-scale integrated circuits, the planarization technology of the conductive layer and the insulating dielectric layer has become particularly critical. In the 1980s, the chemical mechanical polishing (CMP) technology pioneered by IBM was considered the most effective method for global planarization. Chemical mechanical polishing (CMP) is composed of chemical action, mechanical action, and a combination of these two actions. The chemical mechanical polishing operation instrument usually consists of a polishing table with a polishing pad and a polishing head for carrying the wafer. The polishing head fixes the wafer, and then presses the front surface of the wafer on the polishing pad. When chemical mechanical polishing is performed, the polishing head moves linearly on the polishing pad or rotates in the same direction as the polishing table. At the same time, the slurry containing the abrasive is dropped onto the polishing pad, and the slurry is spread on the polishing pad due to centrifugal action. The surface of the wafer is fully planarized under the dual action of mechanical and chemical.

因具有寬頻隙、高熱導率、高臨界擊穿電場、高電子飽和遷移速率、高化學穩定性等特點，碳化矽、無定形碳等含碳材料作為新一代寬頻隙半導體材料，在高溫、高頻、大功率、高密度集成電子器件等方面具有巨大的應用潛力。但是由於含碳材料在常溫下非常穩定，不易發生化學反應，對機械力研磨的耐受性很好，因此常用的化學機械拋光液在拋光含碳材料時，難以獲得較高的去除速率。Because of its wide frequency gap, high thermal conductivity, high critical breakdown electric field, high electron saturation migration rate, high chemical stability, etc., carbon-containing materials such as silicon carbide and amorphous carbon are used as a new generation of wide-band-gap semiconductor materials. High frequency, high power, high-density integrated electronic devices and other aspects have huge application potential. However, because carbon-containing materials are very stable at room temperature, are not prone to chemical reactions, and have good resistance to mechanical grinding, it is difficult to obtain a high removal rate when the commonly used chemical mechanical polishing liquids polish carbon-containing materials.

CN102464944A 在拋光液中添加高錳酸、錳酸及其鹽類等強氧化劑，並使用二氧化矽（SiO2 ）、三氧化二鋁（Al2 O3 ）、二氧化鈰（CeO2 ）和二氧化鈦（TiO2 ）等磨料作為研磨顆粒，來提高含碳材料的化學機械去除速率，然而含碳材料的研磨速率仍然偏低，不能滿足半導體工藝要求。CN102464944A Adding strong oxidizing agents such as permanganic acid, manganic acid and their salts to the polishing liquid, and using silicon dioxide (SiO 2 ), aluminum oxide (Al 2 O 3 ), cerium oxide (CeO 2 ) and titanium dioxide Abrasives such as (TiO 2 ) are used as abrasive particles to increase the chemical mechanical removal rate of carbon-containing materials. However, the polishing rate of carbon-containing materials is still low and cannot meet the requirements of semiconductor processes.

為瞭解決上述技術問題，本發明旨在提供一種化學機械拋光液及其使用方法，通過在拋光液中加入二氧化鈰、二氧化鈦、二氧化錳和三氧化二鋁中的兩種或多種金屬氧化物相互包覆的複合氧化物顆粒，提高含碳材料的去除速率。In order to solve the above technical problems, the present invention aims to provide a chemical mechanical polishing liquid and a method of use thereof, by adding two or more metal oxides of ceria, titanium dioxide, manganese dioxide and aluminum oxide to the polishing liquid. The composite oxide particles coated with each other can increase the removal rate of carbon-containing materials.

具體地，本發明提供了一種化學機械拋光液，包括複合研磨顆粒、氧化劑和水。Specifically, the present invention provides a chemical mechanical polishing liquid, which includes composite abrasive particles, an oxidizer, and water.

在一些實施例中，所述複合研磨顆粒為選自二氧化鈰、二氧化鈦、二氧化錳和三氧化二鋁中的兩種或多種金屬氧化物相互包覆的複合氧化物顆粒。優選地，所述複合研磨顆粒選自表面包覆三氧化二鋁的二氧化鈦顆粒，表面包覆二氧化錳的二氧化鈦顆粒，表面包覆二氧化鈦的二氧化鈰顆粒，表面包覆三氧化二鋁的二氧化鈰顆粒，表面包覆二氧化錳和三氧化二鋁的二氧化鈦顆粒，表面包覆二氧化鈦的二氧化錳顆粒，表面包覆二氧化鈦的三氧化二鋁顆粒中的一種或多種。In some embodiments, the composite abrasive particles are composite oxide particles in which two or more metal oxides selected from the group consisting of ceria, titanium dioxide, manganese dioxide and aluminum oxide are coated with each other. Preferably, the composite abrasive particles are selected from the group consisting of titanium dioxide particles coated with aluminum oxide, titanium dioxide particles coated with manganese dioxide, ceria particles coated with titanium dioxide, and two particles coated with aluminum oxide. One or more of cerium oxide particles, titanium dioxide particles coated with manganese dioxide and aluminum oxide on the surface, manganese dioxide particles coated with titanium dioxide on the surface, and aluminum oxide particles coated with titanium dioxide on the surface.

在一些實施例中，所述複合研磨顆粒的質量百分比濃度為0.1-10%。優選地，所述複合研磨顆粒的質量百分比濃度為0.5-5.0%In some embodiments, the mass percentage concentration of the composite abrasive particles is 0.1-10%. Preferably, the mass percentage concentration of the composite abrasive particles is 0.5-5.0%

在一些實施例中，所述複合研磨顆粒的粒徑為50-500nm。優選地，所述複合研磨顆粒的粒徑為50-350nm。In some embodiments, the particle size of the composite abrasive particles is 50-500 nm. Preferably, the particle size of the composite abrasive particles is 50-350 nm.

在一些實施例中，所述氧化劑選自氯酸鹽、高氯酸鹽、碘酸鹽、高碘酸鹽、高錳酸鹽、雙氧水、單過硫酸鹽、過硫酸鹽中的一種或多種；優選地，所述氧化劑為高錳酸鉀。In some embodiments, the oxidant is selected from one or more of chlorate, perchlorate, iodate, periodate, permanganate, hydrogen peroxide, monopersulfate, and persulfate; Preferably, the oxidant is potassium permanganate.

在一些實施例中，所述氧化劑的質量百分比濃度為0.01-1%。優選地，所述氧化劑的質量百分比濃度為0.05-0.5%In some embodiments, the mass percentage concentration of the oxidant is 0.01-1%. Preferably, the mass percentage concentration of the oxidant is 0.05-0.5%

在一些實施例中，所述化學機械拋光液的pH值為2-6。優選地，所述化學機械拋光液的pH值為2-4。In some embodiments, the pH value of the chemical mechanical polishing liquid is 2-6. Preferably, the pH value of the chemical mechanical polishing liquid is 2-4.

本發明中的化學機械拋光液中，還可以包含pH調節劑和殺菌劑等其他本領域的添加劑。The chemical mechanical polishing liquid in the present invention may also contain other additives in the art such as pH adjusters and bactericides.

另一方面，本發明提供了一種本發明中化學機械拋光液的使用方法，包括：將本發明的化學機械拋光液用於含碳材料的化學機械拋光。On the other hand, the present invention provides a method for using the chemical mechanical polishing liquid of the present invention, including: using the chemical mechanical polishing liquid of the present invention for chemical mechanical polishing of carbon-containing materials.

本發明的化學機械拋光液可以將除氧化劑以外的組分濃縮配置。在使用前，用去離子水進行稀釋並添加氧化劑至本發明的濃度範圍使用。The chemical mechanical polishing liquid of the present invention can be configured by condensing components other than the oxidizing agent. Before use, dilute with deionized water and add an oxidizing agent to the concentration range of the present invention for use.

本發明提供的化學機械拋光液及其使用方法，通過在拋光液中加入二氧化鈰、二氧化鈦、二氧化錳和三氧化二鋁中的兩種或多種金屬氧化物相互包覆的複合氧化物顆粒，可以有效提高含碳材料的去除速率。The chemical mechanical polishing liquid provided by the present invention and the method of use thereof include composite oxide particles in which two or more metal oxides of cerium dioxide, titanium dioxide, manganese dioxide and aluminum oxide are coated in the polishing liquid. , Can effectively improve the removal rate of carbon-containing materials.

下麵通過具體實施例進一步闡述本發明的優勢，但本發明的保護範圍不僅僅侷限於下述實施例。The advantages of the present invention are further illustrated by specific examples below, but the protection scope of the present invention is not limited to the following examples.

實施例一Example one

表1給出了本發明的化學機械拋光液的實施例1-15的組分及其含量，按表中所給配方，將一定濃度的氧化劑溶液與複合研磨顆粒混合均勻，用水補足質量百分比至100%。用KOH或HNO3 調節拋光液的pH值至所需pH值即可。Table 1 shows the components and contents of Examples 1-15 of the chemical mechanical polishing liquid of the present invention. According to the formula given in the table, a certain concentration of oxidant solution and composite abrasive particles are mixed uniformly, and water is used to make up the mass percentage to 100%. Use KOH or HNO 3 to adjust the pH of the polishing liquid to the desired pH.

表1 本發明實施例1-15的拋光液組分及其含量 研磨顆粒 氧化劑 pH 內核 覆蓋層 含量% 粒徑nm 具體物質 含量% 實施例1 二氧化鈦 三氧化二鋁 10.0 200 氯酸鉀 0.08 2.0 實施例2 二氧化錳 二氧化鈦 7.0 270 高氯酸鉀 0.10 5.0 實施例3 二氧化鈦 二氧化錳 1.5 400 碘酸鉀 0.35 4.0 實施例4 二氧化鈰 二氧化鈦 0.1 80 高碘酸鉀 0.65 2.2 實施例5 二氧化鈦 三氧化二鋁 0.6 500 高錳酸鉀 0.05 3.8 實施例6 二氧化鈰 三氧化二鋁 8.0 100 雙氧水 1.00 4.2 實施例7 三氧化二鋁 二氧化鈦 5.0 250 高錳酸鉀 0.01 5.0 實施例8 二氧化鈰 二氧化鈦 2.5 80 過硫酸鉀 0.30 6.0 實施例9 二氧化鈦 二氧化錳 0.5 350 高錳酸鉀 0.30 2.8 實施例10 二氧化鈰 二氧化鈦 5.0 150 高錳酸鉀 0.75 2.2 實施例11 二氧化鈰 三氧化二鋁 6.5 50 高錳酸鉀 0.15 3.5 實施例12 二氧化鈦 二氧化錳和三氧化二鋁 1.5 400 過硫酸鉀 0.30 4.9 實施例13 二氧化鈦 二氧化錳和三氧化二鋁 0.3 280 高錳酸鉀 0.10 3.0 實施例14 二氧化錳 二氧化鈦 2.5 120 高錳酸鉀 0.05 4.5 實施例15 三氧化二鋁 二氧化鈦 4.5 200 過硫酸鉀 0.30 5.0 Table 1 The composition and content of the polishing liquid of Examples 1-15 of the present invention Abrasive particles Oxidant pH Kernel Cover layer content% Particle size nm Specific substance content% Example 1 Titanium dioxide Aluminum oxide 10.0 200 Potassium Chlorate 0.08 2.0 Example 2 manganese dioxide Titanium dioxide 7.0 270 Potassium perchlorate 0.10 5.0 Example 3 Titanium dioxide manganese dioxide 1.5 400 Potassium iodate 0.35 4.0 Example 4 Cerium oxide Titanium dioxide 0.1 80 Potassium periodate 0.65 2.2 Example 5 Titanium dioxide Aluminum oxide 0.6 500 potassium permanganate 0.05 3.8 Example 6 Cerium oxide Aluminum oxide 8.0 100 Hydrogen peroxide 1.00 4.2 Example 7 Aluminum oxide Titanium dioxide 5.0 250 potassium permanganate 0.01 5.0 Example 8 Cerium oxide Titanium dioxide 2.5 80 Potassium persulfate 0.30 6.0 Example 9 Titanium dioxide manganese dioxide 0.5 350 potassium permanganate 0.30 2.8 Example 10 Cerium oxide Titanium dioxide 5.0 150 potassium permanganate 0.75 2.2 Example 11 Cerium oxide Aluminum oxide 6.5 50 potassium permanganate 0.15 3.5 Example 12 Titanium dioxide Manganese dioxide and aluminum oxide 1.5 400 Potassium persulfate 0.30 4.9 Example 13 Titanium dioxide Manganese dioxide and aluminum oxide 0.3 280 potassium permanganate 0.10 3.0 Example 14 manganese dioxide Titanium dioxide 2.5 120 potassium permanganate 0.05 4.5 Example 15 Aluminum oxide Titanium dioxide 4.5 200 Potassium persulfate 0.30 5.0

實施例二Example two

表2給出了本發明的化學機械拋光液的實施例16-24和對比實施例1-4，按表中所給配方，將一定濃度的氧化劑溶液與複合研磨顆粒混合均勻，用水補足質量百分比至100%。用KOH或HNO3 調節拋光液的pH值至所需pH值即可。Table 2 shows Examples 16-24 and Comparative Examples 1-4 of the chemical mechanical polishing liquid of the present invention. According to the formula given in the table, a certain concentration of oxidant solution and composite abrasive particles are mixed uniformly, and the mass percentage is made up with water. To 100%. Use KOH or HNO 3 to adjust the pH of the polishing liquid to the desired pH.

表2 本發明實施例16-24和對比例1-4的拋光液組分及其含量 研磨顆粒 氧化劑 pH 內核 覆蓋層 含量% 粒徑nm 具體物質 含量% 對比例1 二氧化矽 / 10.0 80 高氯酸鉀 0.08 2.5 對比例2 二氧化鈦 /　 2.5 100 高錳酸鉀 0.10 4.0 對比例3 三氧化二鋁 /　 5.0 150 高錳酸鉀 0.10 4.0 對比例4 二氧化鈦 三氧化二鋁 4.0 250 / / 2.5 實施例16 三氧化二鋁 二氧化鈦 5.0 200 高碘酸鉀 0.10 4.0 實施例17 二氧化鈦 二氧化錳 2.5 230 高錳酸鉀 0.05 3.6 實施例18 二氧化鈰 三氧化二鋁 5.0 80 過硫酸鉀 0.50 3.0 實施例19 二氧化鈰 二氧化鈦 0.5 100 高錳酸鉀 0.30 3.5 實施例20 二氧化鈦 二氧化錳和三氧化二鋁 2.5 350 高錳酸鉀 0.45 4.0 實施例21 二氧化鈦 三氧化二鋁 4.0 250 高錳酸鉀 0.15 2.5 實施例22 二氧化鈦 二氧化錳 4.5 300 高錳酸鉀 0.30 3.0 實施例23 二氧化錳 二氧化鈦 1.5 150 高錳酸鉀 0.10 3.8 實施例24 二氧化鈰 二氧化鈦 2.5 50 高錳酸鉀 0.35 2.0 Table 2 Polishing liquid components and their contents of Examples 16-24 and Comparative Examples 1-4 of the present invention Abrasive particles Oxidant pH Kernel Cover layer content% Particle size nm Specific substance content% Comparative example 1 Silicon dioxide / 10.0 80 Potassium perchlorate 0.08 2.5 Comparative example 2 Titanium dioxide / 2.5 100 potassium permanganate 0.10 4.0 Comparative example 3 Aluminum oxide / 5.0 150 potassium permanganate 0.10 4.0 Comparative example 4 Titanium dioxide Aluminum oxide 4.0 250 / / 2.5 Example 16 Aluminum oxide Titanium dioxide 5.0 200 Potassium periodate 0.10 4.0 Example 17 Titanium dioxide manganese dioxide 2.5 230 potassium permanganate 0.05 3.6 Example 18 Cerium oxide Aluminum oxide 5.0 80 Potassium persulfate 0.50 3.0 Example 19 Cerium oxide Titanium dioxide 0.5 100 potassium permanganate 0.30 3.5 Example 20 Titanium dioxide Manganese dioxide and aluminum oxide 2.5 350 potassium permanganate 0.45 4.0 Example 21 Titanium dioxide Aluminum oxide 4.0 250 potassium permanganate 0.15 2.5 Example 22 Titanium dioxide manganese dioxide 4.5 300 potassium permanganate 0.30 3.0 Example 23 manganese dioxide Titanium dioxide 1.5 150 potassium permanganate 0.10 3.8 Example 24 Cerium oxide Titanium dioxide 2.5 50 potassium permanganate 0.35 2.0

效果實施例一Effect Example One

使用對比例1-4和本發明實施例16-24的拋光液，按照下述條件對空片無定形碳進行拋光。具體拋光條件：拋光機台為Reflexion LK，拋光墊IC1010拋光墊，300mm晶圓，研磨壓力2.5psi，研磨盤轉速93轉/分鐘，研磨頭轉速87轉/分鐘，拋光液流速300ml/min，拋光時間為1min。測量各拋光液對無定形碳的去除速率記於表3。Using the polishing liquids of Comparative Examples 1-4 and Examples 16-24 of the present invention, the blank amorphous carbon was polished according to the following conditions. Specific polishing conditions: polishing machine is Reflexion LK, polishing pad IC1010 polishing pad, 300mm wafer, grinding pressure 2.5psi, grinding disc rotation speed 93 rpm, grinding head rotation speed 87 rpm, polishing fluid flow rate 300ml/min, polishing The time is 1 min. The removal rate of amorphous carbon by each polishing liquid was measured and recorded in Table 3.

表3 對比例1-4與實施例16-24拋光液對無定形碳的去除速率 拋光液 無定形碳去除速率（Å/min） 對比例1 30 對比例2 55 對比例3 50 對比例4 8 實施例16 181 實施例17 146 實施例18 220 實施例19 175 實施例20 170 實施例21 245 實施例22 235 實施例23 195 實施例24 215 Table 3 The removal rate of amorphous carbon by polishing liquids of Comparative Examples 1-4 and Examples 16-24 Polishing liquid Amorphous carbon removal rate (Å/min) Comparative example 1 30 Comparative example 2 55 Comparative example 3 50 Comparative example 4 8 Example 16 181 Example 17 146 Example 18 220 Example 19 175 Example 20 170 Example 21 245 Example 22 235 Example 23 195 Example 24 215

由表3可見，對比例1-3分別選用單組分研磨顆粒，對比例4雖然採用複合磨料，但沒有添加合適的氧化劑，其無定形碳的去除速率較低。本發明實施例16-24的拋光液，通過選擇合適組分、合適粒徑的複合研磨顆粒以及氧化劑，通過調節合適的pH值，能夠顯著提高無定形碳的去除速率。It can be seen from Table 3 that single-component abrasive particles are used in Comparative Examples 1-3. Although the composite abrasive is used in Comparative Example 4, a suitable oxidant is not added, and the removal rate of amorphous carbon is relatively low. The polishing liquids of Examples 16-24 of the present invention can significantly increase the removal rate of amorphous carbon by selecting appropriate components, composite abrasive particles of appropriate particle size, and oxidizing agent, and adjusting the appropriate pH value.

效果實施例二Effect embodiment two

使用對比例1-3和本發明實施例21-24的拋光液，按照下述條件對空片碳化矽進行拋光。具體拋光條件：拋光機台為Reflexion LK，拋光墊IC1010拋光墊，300mm晶圓，研磨壓力2.5psi，研磨盤轉速93轉/分鐘，研磨頭轉速87轉/分鐘，拋光液流速300ml/min，拋光時間為1min。測量各拋光液對碳化矽的去除速率記於表4。Using the polishing liquids of Comparative Examples 1-3 and Examples 21-24 of the present invention, the blank silicon carbide was polished under the following conditions. Specific polishing conditions: polishing machine is Reflexion LK, polishing pad IC1010 polishing pad, 300mm wafer, grinding pressure 2.5psi, grinding disc rotation speed 93 rpm, grinding head rotation speed 87 rpm, polishing fluid flow rate 300ml/min, polishing The time is 1 min. Measure the removal rate of silicon carbide by each polishing solution and record it in Table 4.

表4 對比例1-3與實施例21-24拋光液對碳化矽的去除速率 拋光液 碳化矽去除速率（Å/min） 對比例1 220 對比例2 265 對比例3 248 對比例4 20 實施例21 800 實施例22 768 實施例23 693 實施例24 719 Table 4 The removal rate of silicon carbide by the polishing solutions of Comparative Examples 1-3 and Examples 21-24 Polishing liquid Silicon carbide removal rate (Å/min) Comparative example 1 220 Comparative example 2 265 Comparative example 3 248 Comparative example 4 20 Example 21 800 Example 22 768 Example 23 693 Example 24 719

由表4可見，對比例1-3分別選用單組分研磨顆粒，對比例4雖然採用複合磨料，但沒有添加合適的氧化劑，其碳化矽的去除速率較低。本發明實施例21-24的拋光液，通過選擇合適組分、合適粒徑的複合研磨顆粒以及氧化劑，通過調節合適的pH值，能夠顯著提高碳化矽去除速率。It can be seen from Table 4 that the single-component abrasive particles are used in Comparative Examples 1-3. Although the composite abrasive is used in Comparative Example 4, no suitable oxidizing agent is added, and the removal rate of silicon carbide is relatively low. The polishing liquids of Examples 21-24 of the present invention can significantly increase the silicon carbide removal rate by selecting appropriate components, composite abrasive particles of appropriate particle size, and oxidizing agent, and adjusting the appropriate pH value.

綜上所述，本發明通過在拋光液中添加複合研磨顆粒，提高了拋光液對無定形碳、碳化矽等含碳材料的去除速率。In summary, the present invention increases the removal rate of amorphous carbon, silicon carbide and other carbonaceous materials by the polishing solution by adding composite abrasive particles to the polishing solution.

以上對本發明的具體實施例進行了詳細描述，但其只是作為範例，本發明並不限制於以上描述的具體實施例。對於本領域技術人員而言，任何對本發明進行的等同修改和替代也都在本發明的範疇之中。因此，在不脫離本發明的精神和範圍下所作的均等變換和修改，都應涵蓋在本發明的範圍內。The specific embodiments of the present invention are described in detail above, but they are only examples, and the present invention is not limited to the specific embodiments described above. For those skilled in the art, any equivalent modifications and substitutions made to the present invention are also within the scope of the present invention. Therefore, all equivalent changes and modifications made without departing from the spirit and scope of the present invention should all fall within the scope of the present invention.

Claims (10)

一種化學機械拋光液，包括：複合研磨顆粒、氧化劑和水。A chemical mechanical polishing liquid includes: composite abrasive particles, oxidizer and water. 如請求項1所述的化學機械拋光液，其中，所述複合研磨顆粒為選自二氧化鈰、二氧化鈦、二氧化錳和三氧化二鋁中的兩種或多種金屬氧化物相互包覆的複合氧化物顆粒。The chemical mechanical polishing solution according to claim 1, wherein the composite abrasive particles are a composite of two or more metal oxides selected from the group consisting of ceria, titanium dioxide, manganese dioxide and aluminum oxide. Oxide particles. 如請求項2所述的化學機械拋光液，其中，所述複合研磨顆粒選自表面包覆三氧化二鋁的二氧化鈦顆粒，表面包覆二氧化錳的二氧化鈦顆粒，表面包覆二氧化鈦的二氧化鈰顆粒，表面包覆三氧化二鋁的二氧化鈰顆粒，表面包覆二氧化錳和三氧化二鋁的二氧化鈦顆粒，表面包覆二氧化鈦的二氧化錳顆粒，表面包覆二氧化鈦的三氧化二鋁顆粒中的一種或多種。The chemical mechanical polishing solution according to claim 2, wherein the composite abrasive particles are selected from the group consisting of titanium dioxide particles coated with aluminum oxide, titanium dioxide particles coated with manganese dioxide, and ceria coated with titanium dioxide. Particles, ceria particles coated with aluminum oxide, titanium dioxide particles coated with manganese dioxide and aluminum oxide, manganese dioxide particles coated with titanium dioxide, aluminum oxide particles coated with titanium dioxide One or more of. 如請求項1所述的化學機械拋光液，其中，所述複合研磨顆粒的質量百分比濃度為0.1-10%。The chemical mechanical polishing liquid according to claim 1, wherein the mass percentage concentration of the composite abrasive particles is 0.1-10%. 如請求項1所述的化學機械拋光液，其中，所述複合研磨顆粒的粒徑為50-500nm。The chemical mechanical polishing liquid according to claim 1, wherein the particle size of the composite abrasive particles is 50-500 nm. 如請求項1所述的化學機械拋光液，其中，所述氧化劑選自氯酸鹽、高氯酸鹽、碘酸鹽、高碘酸鹽、高錳酸鹽、雙氧水、單過硫酸鹽、過硫酸鹽中的一種或多種。The chemical mechanical polishing liquid according to claim 1, wherein the oxidizing agent is selected from the group consisting of chlorate, perchlorate, iodate, periodate, permanganate, hydrogen peroxide, monopersulfate, peroxide One or more of sulfates. 如請求項6所述的化學機械拋光液，其中，所述氧化劑為高錳酸鉀。The chemical mechanical polishing liquid according to claim 6, wherein the oxidizing agent is potassium permanganate. 如請求項1所述的化學機械拋光液，其中，所述氧化劑的質量百分比濃度為0.01-1%。The chemical mechanical polishing liquid according to claim 1, wherein the mass percentage concentration of the oxidant is 0.01-1%. 如請求項1所述的化學機械拋光液，其中，所述化學機械拋光液的pH值為2-6。The chemical mechanical polishing liquid according to claim 1, wherein the pH of the chemical mechanical polishing liquid is 2-6. 一種化學機械拋光液的使用方法，其中，如請求項1-9中任一項所述的化學機械拋光液用於含碳材料的化學機械拋光。A method for using a chemical mechanical polishing liquid, wherein the chemical mechanical polishing liquid according to any one of claims 1-9 is used for chemical mechanical polishing of carbon-containing materials.
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