TW202131475A - Control circuit - Google Patents

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TW202131475A
TW202131475A TW109103792A TW109103792A TW202131475A TW 202131475 A TW202131475 A TW 202131475A TW 109103792 A TW109103792 A TW 109103792A TW 109103792 A TW109103792 A TW 109103792A TW 202131475 A TW202131475 A TW 202131475A
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transistor
electrode
coupled
electrostatic discharge
control circuit
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TW109103792A
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TWI713192B (en
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李建興
黃曄仁
林文新
邱俊榕
邱華琦
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世界先進積體電路股份有限公司
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Abstract

A control circuit applied in a specific device and including a first transistor and an electrostatic discharge (ESD) protection circuit is provided. The specific transistor has III-V semiconductor material and includes a control electrode, a first electrode and a second electrode. The first transistor is coupled between the first and second electrodes and has the III-V semiconductor material. The ESD protection circuit is coupled to the control electrode, the first transistor and the second electrode. When an ESD event occurs, the ESD protection circuit provides a discharge path to release an ESD current from the control electrode to the second electrode.

Description

控制電路Control circuit

本發明係有關於一種高電子遷移率元件，特別是有關於一種靜電放電(Electrostatic Discharge；ESD)保護電路的高電子遷移率元件。The present invention relates to a high electron mobility component, and particularly relates to a high electron mobility component of an electrostatic discharge (Electrostatic Discharge; ESD) protection circuit.

高電子移動率電晶體(High Electron Mobility Transistor，HEMT)因具有高輸出電壓優點，廣泛應用於高功率半導體裝置當中，以滿足消費電子產品、通訊硬體、電動車、或家電市場需求。然而，當一靜電放電事件發生時，高電子移動率電晶體很有可能受到靜電放電電流的影響。High Electron Mobility Transistor (HEMT) is widely used in high-power semiconductor devices due to its high output voltage advantages to meet the market demands of consumer electronics, communication hardware, electric vehicles, or home appliances. However, when an electrostatic discharge event occurs, the high electron mobility transistor is likely to be affected by the electrostatic discharge current.

本發明提供一種控制電路，應用於一特定元件中。特定元件具有三五族半導體材料，並包括一控制電極、一第一電極以及一第二電極。控制電路包括一第一電晶體以及一靜電放電保護電路。第一電晶體耦接於第一及第二電極之間，並具有三五族半導體材料。靜電放電保護電路耦接控制電極、第一電晶體及第二電極。當一靜電放電事件發生時，靜電放電保護電路提供一放電路徑，用以將一靜電放電電流由控制電極釋放至第二電極。The present invention provides a control circuit applied to a specific element. The specific element has three or five group semiconductor materials, and includes a control electrode, a first electrode, and a second electrode. The control circuit includes a first transistor and an electrostatic discharge protection circuit. The first transistor is coupled between the first electrode and the second electrode, and has a group III or V semiconductor material. The electrostatic discharge protection circuit is coupled to the control electrode, the first transistor and the second electrode. When an electrostatic discharge event occurs, the electrostatic discharge protection circuit provides a discharge path for releasing an electrostatic discharge current from the control electrode to the second electrode.

本發明更提供一種高電子遷移率元件，包括一基底、一控制電極、一第一電極、一第二電極以及一控制電路。基底具有三五族半導體材料。控制電極、第一電極及第二電極形成於基底之上。控制電路包括一第一電晶體以及一靜電放電保護電路。第一電晶體耦接於第一及第二電極之間，並具有三五族半導體材料。靜電放電保護電路耦接控制電極、第一電晶體及第二電極。當一靜電放電事件發生時，靜電放電保護電路提供一放電路徑，用以將一靜電放電電流由控制電極釋放至第二電極。The present invention further provides a high electron mobility device, including a substrate, a control electrode, a first electrode, a second electrode, and a control circuit. The substrate has three or five group semiconductor materials. The control electrode, the first electrode and the second electrode are formed on the substrate. The control circuit includes a first transistor and an electrostatic discharge protection circuit. The first transistor is coupled between the first electrode and the second electrode, and has a group III or V semiconductor material. The electrostatic discharge protection circuit is coupled to the control electrode, the first transistor and the second electrode. When an electrostatic discharge event occurs, the electrostatic discharge protection circuit provides a discharge path for releasing an electrostatic discharge current from the control electrode to the second electrode.

為讓本發明之目的、特徵和優點能更明顯易懂，下文特舉出實施例，並配合所附圖式，做詳細之說明。本發明說明書提供不同的實施例來說明本發明不同實施方式的技術特徵。其中，實施例中的各元件之配置係為說明之用，並非用以限制本發明。另外，實施例中圖式標號之部分重覆，係為了簡化說明，並非意指不同實施例之間的關聯性。In order to make the purpose, features and advantages of the present invention more comprehensible, embodiments are specifically listed below, and detailed descriptions are made in conjunction with the accompanying drawings. The specification of the present invention provides different examples to illustrate the technical features of different embodiments of the present invention. Wherein, the configuration of each element in the embodiment is for illustrative purposes, and is not intended to limit the present invention. In addition, the part of the repetition of the symbols of the drawings in the embodiments is for simplifying the description, and does not imply the relevance between different embodiments.

第1圖為本發明之高電子遷移率元件的示意圖。如圖所示，高電子遷移率元件100包括一基底(substrate)110、一控制電極120、電極130、140以及一控制電路150。在一可能實施例中，高電子遷移率元件100係為一高電子遷移率電晶體(HEMT)。在本實施例中，基底110具有三五族半導體材料，如砷化鎵(gallium arsenide；GaAs)、磷化銦(indium phosphide；InP)、氮化鎵(gallium nitride；GaN)或是矽鍺合金(SiGe)。Figure 1 is a schematic diagram of the high electron mobility device of the present invention. As shown in the figure, the high electron mobility device 100 includes a substrate 110, a control electrode 120, electrodes 130 and 140, and a control circuit 150. In a possible embodiment, the high electron mobility device 100 is a high electron mobility transistor (HEMT). In this embodiment, the substrate 110 has a group III-V semiconductor material, such as gallium arsenide (GaAs), indium phosphide (InP), gallium nitride (GaN), or a silicon germanium alloy (SiGe).

控制電極120、電極130及140均形成於基底110之上。在一可能實施例中，當高電子遷移率元件100係為一高電子遷移率電晶體時，控制電極120作為高電子遷移率電晶體的閘極(gate)。在此例中，電極130作為高電子遷移率電晶體的汲極(drain)，並且電極140作為高電子遷移率電晶體的源極(source)。The control electrode 120 and the electrodes 130 and 140 are all formed on the substrate 110. In a possible embodiment, when the high electron mobility device 100 is a high electron mobility transistor, the control electrode 120 serves as a gate of the high electron mobility transistor. In this example, the electrode 130 serves as the drain of the high electron mobility transistor, and the electrode 140 serves as the source of the high electron mobility transistor.

控制電路150形成於基底110之上。在本實施例中，控制電路150係整合於高電子遷移率元件100之中，用以避免高電子遷移率元件100受到一靜電放電電流的影響。如圖所示，控制電路150包括一靜電放電保護電路(ESD protection circuit)151以及一電晶體152。The control circuit 150 is formed on the substrate 110. In this embodiment, the control circuit 150 is integrated in the high electron mobility device 100 to prevent the high electron mobility device 100 from being affected by an electrostatic discharge current. As shown in the figure, the control circuit 150 includes an ESD protection circuit 151 and a transistor 152.

電晶體152耦接於電極130與140之間。在一可能實施例中，電晶體152具有三五族半導體材料。本發明並不限定電晶體152的結構。在本實施例中，電晶體152也是一高電子遷移率電晶體。如圖所示，電晶體152的汲極耦接電極130，其源極耦接電極140，其閘極耦接靜電放電保護電路151。The transistor 152 is coupled between the electrodes 130 and 140. In a possible embodiment, the transistor 152 has Group III or V semiconductor materials. The present invention does not limit the structure of the transistor 152. In this embodiment, the transistor 152 is also a high electron mobility transistor. As shown in the figure, the drain of the transistor 152 is coupled to the electrode 130, the source thereof is coupled to the electrode 140, and the gate thereof is coupled to the electrostatic discharge protection circuit 151.

當一靜電放電事件發生在電極130與140之一者，並且電極130與140之另一者耦接至地時，藉由電晶體152的閘極與汲極之間的一寄生電容(未顯示)，電晶體152的閘極電壓逐漸升高。當電晶體152的閘極與源極之間的電壓大於電晶體152的臨界電壓(threshold voltage)時，電晶體152導通。因此，一靜電放電電流由電極130被釋放至電極140，或是由電極140被釋放至電極130。When an electrostatic discharge event occurs at one of the electrodes 130 and 140, and the other of the electrodes 130 and 140 is coupled to ground, a parasitic capacitance (not shown) between the gate and drain of the transistor 152 ), the gate voltage of the transistor 152 gradually increases. When the voltage between the gate and source of the transistor 152 is greater than the threshold voltage of the transistor 152, the transistor 152 is turned on. Therefore, an electrostatic discharge current is discharged from the electrode 130 to the electrode 140 or is discharged from the electrode 140 to the electrode 130.

在本實施例中，靜電放電保護電路151耦接控制電極120、電晶體152及電極140，用以避免一靜電放電電流由控制電極120進入電晶體152的閘極。舉例而言，當一靜電放電事件發生於控制電極120並且電極140耦接至地時，靜電放電保護電路151提供一放電路徑(未顯示)，用以將一靜電放電電流由控制電極120釋放至電極140。因此，電晶體152的閘極不會受到靜電放電應力(ESD stress)的傷害。然而，當靜電放電事件未發生時，靜電放電保護電路151切斷放電路徑。此時，高電子遷移率元件100根據控制電極120、電極130及140的電壓位準而動作。In this embodiment, the electrostatic discharge protection circuit 151 is coupled to the control electrode 120, the transistor 152, and the electrode 140 to prevent an electrostatic discharge current from entering the gate of the transistor 152 from the control electrode 120. For example, when an electrostatic discharge event occurs on the control electrode 120 and the electrode 140 is coupled to the ground, the electrostatic discharge protection circuit 151 provides a discharge path (not shown) for discharging an electrostatic discharge current from the control electrode 120 to the ground. Electrodes 140. Therefore, the gate of the transistor 152 will not be damaged by ESD stress. However, when the electrostatic discharge event does not occur, the electrostatic discharge protection circuit 151 cuts off the discharge path. At this time, the high electron mobility device 100 operates according to the voltage levels of the control electrode 120, the electrodes 130 and 140.

第2圖為本發明靜電放電保護電路的一可能示意圖。在本實施例中，靜電放電保護電路200包括阻抗元件210、220以及一電晶體230。阻抗元件210耦接於控制電極120與電晶體152之間。在一可能實施例中，阻抗元件210係為一電阻元件R1。電阻元件R1耦接於控制電極120與電晶體152的閘極之間。電阻元件R1的阻值可能在100Ω~200Ω之間。本發明並不限定阻抗元件210的結構。在其它實施例中，阻抗元件210係為一電晶體。在此例中，構成阻抗元件210的電晶體可能也是一高電子遷移率電晶體。Figure 2 is a possible schematic diagram of the electrostatic discharge protection circuit of the present invention. In this embodiment, the electrostatic discharge protection circuit 200 includes impedance elements 210 and 220 and a transistor 230. The impedance element 210 is coupled between the control electrode 120 and the transistor 152. In a possible embodiment, the impedance element 210 is a resistance element R1. The resistance element R1 is coupled between the control electrode 120 and the gate of the transistor 152. The resistance value of the resistance element R1 may be between 100Ω~200Ω. The invention does not limit the structure of the impedance element 210. In other embodiments, the impedance element 210 is a transistor. In this example, the transistor constituting the impedance element 210 may also be a high electron mobility transistor.

阻抗元件220耦接電晶體230及電極140。本發明並不限定阻抗元件220的結構。在一可能實施例中，阻抗元件220係為一電阻元件R2。在此例中，電阻元件R2耦接於電晶體230的閘極與電極140之間。本發明並不限定阻抗元件220的結構。在其它實施例中，阻抗元件220係為一電晶體。在此例中，構成阻抗元件220的電晶體可能是一高電子遷移率電晶體。The impedance element 220 is coupled to the transistor 230 and the electrode 140. The present invention does not limit the structure of the impedance element 220. In a possible embodiment, the impedance element 220 is a resistance element R2. In this example, the resistance element R2 is coupled between the gate of the transistor 230 and the electrode 140. The present invention does not limit the structure of the impedance element 220. In other embodiments, the impedance element 220 is a transistor. In this example, the transistor constituting the impedance element 220 may be a high electron mobility transistor.

電晶體230耦接於控制電極120與電極140之間。在一可能實施例中，電晶體230具有三五族半導體材料。在此例中，電晶體230與高電子遷移率元件100形成於同一基底(如110)上。本發明並不限定電晶體230的結構。在本實施例中，電晶體230也是一高電子遷移率電晶體，其汲極耦接控制電極120，其源極耦接電極140，其閘極耦接阻抗元件220。The transistor 230 is coupled between the control electrode 120 and the electrode 140. In a possible embodiment, the transistor 230 has Group III or V semiconductor materials. In this example, the transistor 230 and the high electron mobility device 100 are formed on the same substrate (such as 110). The invention does not limit the structure of the transistor 230. In this embodiment, the transistor 230 is also a high electron mobility transistor, and its drain is coupled to the control electrode 120, its source is coupled to the electrode 140, and its gate is coupled to the impedance element 220.

當一靜電放電事件發生在控制電極120並且電極140耦接至地時，藉由電晶體230的閘-汲極間的一寄生電容(未顯示)，電晶體230的閘極電壓逐漸上升。當電晶體230的閘極與源極之間的電壓大於電晶體230的臨界電壓時，電晶體230導通，用以將一靜電放電電流由控制電極120釋放至電極140。因此，靜電放電電流不會進入電晶體152的閘極。當靜電放電事件未發生時，阻抗元件220拉低電晶體230的閘極電壓，以避免電晶體230被導通。When an electrostatic discharge event occurs on the control electrode 120 and the electrode 140 is coupled to the ground, the gate voltage of the transistor 230 gradually rises due to a parasitic capacitance (not shown) between the gate and the drain of the transistor 230. When the voltage between the gate and source of the transistor 230 is greater than the threshold voltage of the transistor 230, the transistor 230 is turned on to release an electrostatic discharge current from the control electrode 120 to the electrode 140. Therefore, the electrostatic discharge current does not enter the gate of the transistor 152. When the electrostatic discharge event does not occur, the impedance element 220 pulls down the gate voltage of the transistor 230 to prevent the transistor 230 from being turned on.

另外，當一靜電放電事件發生在電極130並且控制電極120耦接至地時，藉由電晶體152及230各自的閘-汲極間的寄生電容，電晶體152及230的閘極電壓逐漸上升。當電晶體152及230的閘極與源極之間的電壓大於各自的臨界電壓時，電晶體152及230導通。因此，靜電放電電流由電極130開始，流經電晶體152、電極140、電晶體230，流入控制電極120。In addition, when an electrostatic discharge event occurs at the electrode 130 and the control electrode 120 is coupled to the ground, the gate voltage of the transistors 152 and 230 gradually rises due to the parasitic capacitance between the gate and the drain of the transistors 152 and 230. . When the voltage between the gate and source of the transistors 152 and 230 is greater than their respective threshold voltages, the transistors 152 and 230 are turned on. Therefore, the electrostatic discharge current starts from the electrode 130, flows through the transistor 152, the electrode 140, and the transistor 230, and flows into the control electrode 120.

同樣地，當一靜電放電事件發生在控制電極120並且電極130耦接至地時，藉由電晶體230的閘-汲極間的寄生電容，電晶體230的閘極電壓逐漸上升。當電晶體230的閘極與源極之間的電壓大於電晶體230的臨界電壓時，電晶體230導通。此時，由於部分電流流過阻抗元件210，故電晶體152的閘極電壓也會逐漸上升。當電晶體152的閘極與源極之間的電壓大於電晶體152的臨界電壓時，電晶體152導通。因此，靜電放電電流由控制電極120開始，流經電晶體230、電極140、電晶體152，流入電極130。Similarly, when an electrostatic discharge event occurs on the control electrode 120 and the electrode 130 is coupled to the ground, the gate voltage of the transistor 230 gradually rises due to the parasitic capacitance between the gate and the drain of the transistor 230. When the voltage between the gate and source of the transistor 230 is greater than the threshold voltage of the transistor 230, the transistor 230 is turned on. At this time, since part of the current flows through the impedance element 210, the gate voltage of the transistor 152 will also gradually increase. When the voltage between the gate and source of the transistor 152 is greater than the threshold voltage of the transistor 152, the transistor 152 is turned on. Therefore, the electrostatic discharge current starts from the control electrode 120, flows through the transistor 230, the electrode 140, and the transistor 152, and flows into the electrode 130.

在其它實施例中，藉由調整電晶體230的通道尺寸或是阻抗元件220的阻值，便可在靜電放電事件發生時，快速地導通電晶體230，以避免電晶體152的閘極受到靜電放電電流的破壞。另外，藉由增加電晶體230的面積或減少電晶體230的導通阻抗(Ron)，便可調整ESD保護電路320的效能。In other embodiments, by adjusting the channel size of the transistor 230 or the resistance of the impedance element 220, the transistor 230 can be quickly turned on when an electrostatic discharge event occurs, so as to prevent the gate of the transistor 152 from being electrostatically charged. Destruction of discharge current. In addition, by increasing the area of the transistor 230 or reducing the on-resistance (Ron) of the transistor 230, the performance of the ESD protection circuit 320 can be adjusted.

第3圖為本發明之靜電放電保護電路的另一示意圖。在本實施例中，靜電放電保護電路300包括阻抗元件310、320、一電晶體330以及一背對背二極體對340。阻抗元件310耦接於控制電極120與電晶體152之間。阻抗元件320耦接電晶體330及電極140。由於阻抗元件310及320的特性與第2圖的阻抗元件210及220的特性相似，故不再贅述。Figure 3 is another schematic diagram of the electrostatic discharge protection circuit of the present invention. In this embodiment, the electrostatic discharge protection circuit 300 includes impedance elements 310 and 320, a transistor 330, and a pair of back-to-back diodes 340. The impedance element 310 is coupled between the control electrode 120 and the transistor 152. The impedance element 320 is coupled to the transistor 330 and the electrode 140. Since the characteristics of the impedance elements 310 and 320 are similar to those of the impedance elements 210 and 220 in FIG. 2, they will not be described again.

電晶體330耦接於控制電極120與電極140之間。在一可能實施例中，電晶體330具有三五族半導體材料。在本實施例中，電晶體230也是一高電子遷移率電晶體，其閘極耦接阻抗元件320的一端，其汲極耦接控制電極120，其源極耦接阻抗元件320的另一端及電極140。The transistor 330 is coupled between the control electrode 120 and the electrode 140. In a possible embodiment, the transistor 330 has Group III or V semiconductor materials. In this embodiment, the transistor 230 is also a high electron mobility transistor. Its gate is coupled to one end of the impedance element 320, its drain is coupled to the control electrode 120, and its source is coupled to the other end of the impedance element 320 and Electrodes 140.

背對背二極體對340耦接於控制電極120與電晶體330之間。在本實施例中，背對背二極體對340包括二極體D1及D2。二極體D1的陰極(cathode)耦接控制電極120，其陽極(anode)耦接二極體D2的陽極。二極體D2的陰極耦接電晶體330的閘極及阻抗元件320。本發明並不限定二極體D1及D2的種類。在一可能實施例中，二極體D1係為一簫特基二極體(schottky diode)，二極體D2係為一PN接面二極體。The back-to-back diode pair 340 is coupled between the control electrode 120 and the transistor 330. In this embodiment, the back-to-back diode pair 340 includes diodes D1 and D2. The cathode of the diode D1 is coupled to the control electrode 120, and the anode thereof is coupled to the anode of the diode D2. The cathode of the diode D2 is coupled to the gate of the transistor 330 and the impedance element 320. The invention does not limit the types of diodes D1 and D2. In a possible embodiment, the diode D1 is a schottky diode, and the diode D2 is a PN junction diode.

當一靜電放電事件發生在控制電極120並且電極140耦接至地時，藉由電晶體330的閘-汲極間的一寄生電容(未顯示)，電晶體330的閘極電壓逐漸上升。在本實施例中，由於部分電流流經背對背二極體對340，故可快加電晶體330的閘極電壓上升的速度。由於電晶體330快速地被導通，故可將一靜電放電電流由控制電極120釋放至電極140。因此，電晶體152的閘極不會受到靜電放電電流的破壞。當靜電放電事件未發生時，阻抗元件320拉低電晶體330的閘極電壓，以避免電晶體330被導通。When an electrostatic discharge event occurs on the control electrode 120 and the electrode 140 is coupled to the ground, the gate voltage of the transistor 330 gradually rises due to a parasitic capacitance (not shown) between the gate and the drain of the transistor 330. In this embodiment, since part of the current flows through the back-to-back diode pair 340, the gate voltage of the transistor 330 rises faster. Since the transistor 330 is quickly turned on, an electrostatic discharge current can be discharged from the control electrode 120 to the electrode 140. Therefore, the gate of the transistor 152 will not be damaged by the electrostatic discharge current. When the electrostatic discharge event does not occur, the impedance element 320 pulls down the gate voltage of the transistor 330 to prevent the transistor 330 from being turned on.

另外，當一靜電放電事件發生在電極130並且控制電極120耦接至地時，藉由電晶體152及330的閘-汲極的寄生電容，電晶體152及330的閘極電壓逐漸上升。在本實施例中，由於部分電流流經背對背二極體對340，故可快加電晶體330的閘極電壓上升的速度。當電晶體152及330的閘極與源極之間的電壓大於各自的臨界電壓時，電晶體152及330導通。因此，靜電放電電流由電極130開始，流經電晶體152、電極140、電晶體330，流入控制電極120。In addition, when an electrostatic discharge event occurs at the electrode 130 and the control electrode 120 is coupled to the ground, the gate voltage of the transistors 152 and 330 gradually rises due to the parasitic capacitance of the gate-drain of the transistors 152 and 330. In this embodiment, since part of the current flows through the back-to-back diode pair 340, the gate voltage of the transistor 330 rises faster. When the voltage between the gate and source of the transistors 152 and 330 is greater than their respective threshold voltages, the transistors 152 and 330 are turned on. Therefore, the electrostatic discharge current starts from the electrode 130, flows through the transistor 152, the electrode 140, and the transistor 330, and flows into the control electrode 120.

同樣地，當一靜電放電事件發生在控制電極120並且電極130耦接至地時，藉由電晶體330的閘-汲極的寄生電容及背對背二極體對340，電晶體330的閘極電壓逐漸上升。當電晶體330的閘極與源極之間的電壓大於電晶體330的臨界電壓時，電晶體330導通。此時，由於部分電流流過阻抗元件310，故電晶體152的閘極電壓也會逐漸上升。當電晶體152的閘極與源極間的電壓大於電晶體152的臨界電壓時，電晶體152導通。因此，靜電放電電流由控制電極120開始，流經電晶體330、電極140、電晶體152，流入電極130。Similarly, when an ESD event occurs on the control electrode 120 and the electrode 130 is coupled to ground, the gate-drain parasitic capacitance of the transistor 330 and the back-to-back diode pair 340, the gate voltage of the transistor 330 Gradually rise. When the voltage between the gate and source of the transistor 330 is greater than the threshold voltage of the transistor 330, the transistor 330 is turned on. At this time, since part of the current flows through the impedance element 310, the gate voltage of the transistor 152 will also gradually increase. When the voltage between the gate and source of the transistor 152 is greater than the threshold voltage of the transistor 152, the transistor 152 is turned on. Therefore, the electrostatic discharge current starts from the control electrode 120, flows through the transistor 330, the electrode 140, and the transistor 152, and flows into the electrode 130.

在其它實施例中，藉由調整電晶體330的通道尺寸或是阻抗元件320的阻值，便可在靜電放電事件發生時，快速地導通電晶體330，以避免電晶體152的閘極受到靜電放電電流的破壞。另外，藉由增加電晶體330的面積或減少電晶體330的導通阻抗，便可調整ESD保護電路300的效能。In other embodiments, by adjusting the channel size of the transistor 330 or the resistance of the impedance element 320, the transistor 330 can be quickly turned on when an electrostatic discharge event occurs, so as to prevent the gate of the transistor 152 from being exposed to static electricity. Destruction of discharge current. In addition, by increasing the area of the transistor 330 or reducing the on-resistance of the transistor 330, the performance of the ESD protection circuit 300 can be adjusted.

除非另作定義，在此所有詞彙(包含技術與科學詞彙)均屬本發明所屬技術領域中具有通常知識者之一般理解。此外，除非明白表示，詞彙於一般字典中之定義應解釋為與其相關技術領域之文章中意義一致，而不應解釋為理想狀態或過分正式之語態。Unless otherwise defined, all vocabulary (including technical and scientific vocabulary) herein belong to the general understanding of persons with ordinary knowledge in the technical field of the present invention. In addition, unless clearly stated, the definition of a word in a general dictionary should be interpreted as consistent with the meaning in the article in the relevant technical field, and should not be interpreted as an ideal state or an overly formal voice.

雖然本發明已以較佳實施例揭露如上，然其並非用以限定本發明，任何所屬技術領域中具有通常知識者，在不脫離本發明之精神和範圍內，當可作些許之更動與潤飾。舉例而言，本發明實施例所述之系統、裝置或是方法可以硬體、軟體或硬體以及軟體的組合的實體實施例加以實現。因此本發明之保護範圍當視後附之申請專利範圍所界定者為準。Although the present invention has been disclosed as above in the preferred embodiment, it is not intended to limit the present invention. Anyone with ordinary knowledge in the relevant technical field can make some changes and modifications without departing from the spirit and scope of the present invention. . For example, the system, device, or method described in the embodiment of the present invention can be implemented in a physical embodiment of hardware, software, or a combination of hardware and software. Therefore, the protection scope of the present invention shall be subject to those defined by the attached patent application scope.

100:高電子遷移率元件 110:基底 120:控制電極 130、140:電極 150:控制電路 151、200、300:靜電放電保護電路 152、230、330:電晶體 R1、R2:電阻元件 210、220、310、320:阻抗元件 340:背對背二極體對 D1、D2:二極體100: High electron mobility element 110: Base 120: control electrode 130, 140: Electrode 150: control circuit 151, 200, 300: Electrostatic discharge protection circuit 152, 230, 330: Transistor R1, R2: resistance element 210, 220, 310, 320: impedance element 340: Back to Back Diode Pair D1, D2: Diode

第1圖為本發明之高電子遷移率元件的示意圖。 第2圖為本發明之靜電放電保護電路的一示意圖。 第3圖為本發明之靜電放電保護電路的另一示意圖。Figure 1 is a schematic diagram of the high electron mobility device of the present invention. Figure 2 is a schematic diagram of the electrostatic discharge protection circuit of the present invention. Figure 3 is another schematic diagram of the electrostatic discharge protection circuit of the present invention.

100:高電子遷移率元件100: High electron mobility element

110:基底110: Base

120:控制電極120: control electrode

130、140:電極130, 140: Electrode

150:控制電路150: control circuit

151:靜電放電保護電路151: Electrostatic discharge protection circuit

152:電晶體152: Transistor

Claims (10)

一種控制電路，應用於一特定元件中，該特定元件具有三五族半導體材料，並包括一控制電極、一第一電極以及一第二電極，該控制電路包括： 一第一電晶體，耦接於該第一及第二電極之間，並具有三五族半導體材料；以及 一靜電放電保護電路，耦接該控制電極、該第一電晶體及該第二電極，其中，當一靜電放電事件發生時，該靜電放電保護電路提供一放電路徑，用以將一靜電放電電流由該控制電極釋放至該第二電極。A control circuit applied to a specific element, the specific element has Group III or V semiconductor material, and includes a control electrode, a first electrode, and a second electrode. The control circuit includes: A first transistor, coupled between the first and second electrodes, and having group three or five semiconductor materials; and An electrostatic discharge protection circuit is coupled to the control electrode, the first transistor and the second electrode. When an electrostatic discharge event occurs, the electrostatic discharge protection circuit provides a discharge path for discharging an electrostatic discharge current. Released from the control electrode to the second electrode. 如申請專利範圍第1項所述之控制電路，其中該靜電放電保護電路包括： 一第一阻抗元件，耦接於該控制電極與該第一電晶體之間； 一第二電晶體，耦接於該控制電極與該第二電極之間；以及 一第二阻抗元件，耦接該第二電晶體及該第二電極。The control circuit described in item 1 of the scope of patent application, wherein the electrostatic discharge protection circuit includes: A first impedance element coupled between the control electrode and the first transistor; A second transistor coupled between the control electrode and the second electrode; and A second impedance element is coupled to the second transistor and the second electrode. 如申請專利範圍第2項所述之控制電路，更包括： 一背對背二極體對，耦接於該控制電極與該第二電晶體之間。The control circuit described in item 2 of the scope of patent application includes: A pair of back-to-back diodes are coupled between the control electrode and the second transistor. 如申請專利範圍第3項所述之控制電路，其中該背對背二極體對包括： 一第一二極體，具有一第一陰極以及一第一陽極，該第一陰極耦接該控制電極；以及 一第二二極體，具有一第二陰極以及一第二陽極，該第二陰極耦接該第二電晶體，該第二陽極耦接該第一陽極。The control circuit described in item 3 of the scope of patent application, wherein the pair of back-to-back diodes includes: A first diode having a first cathode and a first anode, the first cathode being coupled to the control electrode; and A second diode has a second cathode and a second anode. The second cathode is coupled to the second transistor, and the second anode is coupled to the first anode. 如申請專利範圍第4項所述之控制電路，其中該第一二極體係為一簫特基二極體，該第二二極體係為一PN接面二極體。For the control circuit described in item 4 of the scope of patent application, the first two-pole system is a joltky diode, and the second two-pole system is a PN junction diode. 如申請專利範圍第2項所述之控制電路，其中該第一及第二電晶體具有三五族半導體材料。As for the control circuit described in item 2 of the scope of patent application, the first and second transistors have Group III and V semiconductor materials. 如申請專利範圍第2項所述之控制電路，其中該第一及第二阻抗元件係為電阻元件。In the control circuit described in item 2 of the scope of patent application, the first and second impedance elements are resistive elements. 如申請專利範圍第2項所述之控制電路，其中該第一電晶體具有一第一閘極、一第一汲極以及一第一源極，該第一閘極耦接該第一阻抗元件，該第一汲極耦接該第一電極，該第一源極耦接該第二電極。The control circuit according to claim 2, wherein the first transistor has a first gate, a first drain, and a first source, and the first gate is coupled to the first impedance element , The first drain is coupled to the first electrode, and the first source is coupled to the second electrode. 如申請專利範圍第8項所述之控制電路，其中該第二電晶體具有一第二閘極、一第二汲極以及一第二源極，該第二閘極耦接該第二阻抗元件，該第二汲極耦接該控制電極，該第二源極耦接該第二電極。The control circuit according to claim 8, wherein the second transistor has a second gate, a second drain, and a second source, and the second gate is coupled to the second impedance element , The second drain is coupled to the control electrode, and the second source is coupled to the second electrode. 如申請專利範圍第1項所述之控制電路，其中當該靜電放電事件未發生時，該靜電放電保護電路切斷該放電路徑。For the control circuit described in item 1 of the scope of patent application, when the electrostatic discharge event does not occur, the electrostatic discharge protection circuit cuts off the discharge path.
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TWI775635B (en) * 2021-10-07 2022-08-21 世界先進積體電路股份有限公司 Electronic device
US11728644B2 (en) 2021-11-16 2023-08-15 Vanguard International Semiconductor Corporation Electronic device and electrostatic discharge protection circuit

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US20180026029A1 (en) * 2016-07-21 2018-01-25 Taiwan Semiconductor Manufacturing Co., Ltd. Integrated ESD Protection Circuit for GaN Based Device

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TWI775635B (en) * 2021-10-07 2022-08-21 世界先進積體電路股份有限公司 Electronic device
US11728644B2 (en) 2021-11-16 2023-08-15 Vanguard International Semiconductor Corporation Electronic device and electrostatic discharge protection circuit

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