TW202129955A - Transparent display device, laminated glass, and method for manufacturing transparent display device - Google Patents

Abstract

One embodiment of the present invention is a transparent display device comprising: a transparent substrate (10); light-emitting diode elements (23), at least one of which is arranged on each pixel (PIX) on the transparent substrate (10), each of the light-emitting diode elements (23) having a surface area of 10,000 [mu]m2 or less; a plurality of wires (40) that are connected, respectively, to the light-emitting diode elements (23); and a sealing layer (50) that covers the plurality of wires (40) and the light-emitting diode elements (23) arranged on the transparent substrate (10). The sealing layer (50) is a transparent resin in which the water absorption after curing is 1% or less.

Description

Transparent display device, laminated glass, and manufacturing method of transparent display device

The present invention relates to a transparent display device, laminated glass, and a manufacturing method of the transparent display device.

It is known that a light emitting diode (LED: Light Emitting Diode) element is used in a pixel display device. Patent Document 1 discloses a transparent display device whose back side can be viewed through the display device among such display devices. [Prior technical literature] [Patent literature]

[Patent Document 1] Japanese Patent Laid-Open No. 2006-301650

[The problem to be solved by the invention]

Regarding such a transparent display device, the inventors have discovered the following problems. In such a transparent display device, it is necessary to seal a plurality of LED elements formed on a transparent substrate and wiring connected to them with a transparent resin. Here, there are cases where, for example, the moisture contained in the transparent resin causes electrochemical migration of the wiring, and the wirings that are adjacent to each other are short-circuited. In this case, at least a part of the LED elements no longer light up, so there is a problem that the reliability of the transparent display device deteriorates. Hereinafter, "electrochemical migration" is referred to as "migration" for short. [Technical means to solve the problem]

The present invention provides a transparent display device having the following configuration [1]. [1] A transparent display device comprising: a transparent substrate; a light emitting diode element, at least one light emitting diode element is arranged on the transparent substrate for each pixel, and each has ^{an area of 10,000 μm 2} or less; plural wirings , Which are connected to each of the light-emitting diode elements; and a sealing layer, which covers the light-emitting diode elements and the plurality of wirings arranged on the transparent substrate; and the sealing layer is the water absorption rate after hardening It is less than 1% transparent resin.

In one aspect of the present invention, [2] the transparent display device as in [1], wherein the peel adhesion strength between the sealing layer and the plurality of wires is 1 N/25 mm or more.

[3] The transparent display device of [1] or [2], wherein the peel adhesion strength between the sealing layer and the transparent substrate is 1 N/25 mm or more.

[4] The transparent display device according to any one of [1] to [3], wherein the transparent resin is any one of olefin resin, acrylic resin, and silicon resin.

[5] The transparent display device as in [4], wherein the above-mentioned transparent resin is a cycloolefin polymer or a cycloolefin copolymer.

[6] The transparent display device of [4], wherein the above-mentioned transparent resin is a silicone resin.

[7] As in the transparent display device of any one of [1] to [6], in the display area constituted by the above-mentioned pixels, the interval between adjacent wirings of the plurality of wirings is 3-100 μm.

[8] Such as the transparent display device of any one of [1] to [7], wherein the voltage applied to the plurality of wires is 1.5 V or more.

[9] Such as the transparent display device of any one of [1] to [8], wherein the plurality of wirings are metals mainly composed of copper or aluminum.

[10] The transparent display device of any one of [1] to [9], wherein the transparent display device is mounted on a window glass of an automobile, and is further provided with a sensor, the sensor being disposed on the transparent substrate , Used to monitor at least one of the inside and outside of the vehicle.

[11] A laminated glass comprising: a pair of glass plates, and a transparent display device provided between the pair of glass plates, the transparent display device comprising: a transparent substrate; At least one is arranged for each pixel on the transparent substrate, and each has ^{an area of 10,000 μm 2} or less; a plurality of wires, which are connected to each of the above-mentioned light-emitting diode elements; and a sealing layer, which is covered and arranged on the above-mentioned transparent The above-mentioned light-emitting diode element and the above-mentioned plural wires on the substrate; and the above-mentioned sealing layer is a transparent resin with a water absorption rate of 1% or less after being cured.

[12] The laminated glass of [11], wherein the pair of glass plates are provided with an opaque shielding portion provided on the periphery, and the transparent display device is provided with an opaque non-display area, and the non-display area is provided in a display composed of the above-mentioned pixels. Around the area, and at least a part of the non-display area of the transparent display device is provided in the shielding portion of the pair of glass plates.

[13] Laminated glass such as [11] or [12], which is used for automobile window glass.

[14] The laminated glass of [13], wherein the transparent display device is further provided with a sensor, and the sensor is disposed on the transparent substrate for monitoring at least one of the inside and outside of the vehicle.

[15] A method for manufacturing a transparent display device, which is based on a transparent substrate, for each pixel at least one ^{light-emitting diode element each having an area of 10,000 μm 2} or less is arranged; forming a connection to the above-mentioned light-emitting diode A plurality of wirings for each element; and forming a sealing layer covering the light-emitting diode elements and the plurality of wirings arranged on the transparent substrate; and the water absorption rate of the sealing layer after hardening is 1% or less Made of transparent resin. [Effects of Invention]

According to the present invention, it is possible to provide a transparent display device that suppresses the migration of wiring and is excellent in reliability.

Hereinafter, specific embodiments to which the present invention is applied will be described in detail with reference to the drawings. However, the present invention is not limited to the following embodiments. In addition, for clarification, the following descriptions and drawings can be simplified appropriately.

In this manual, the so-called "transparent display device" refers to a display device that can see visual information such as characters or background on the back side of the display device under the required use environment. Furthermore, the so-called visibility must be judged at least when the display device is in a non-display state, that is, in a non-powered state.

In this specification, "transparent" means that the transmittance of visible light is 40% or more, preferably 60% or more, and more preferably 70% or more. In addition, it can also mean that the transmittance is 5% or more and the haze value is 10 or less. If the transmittance is 5% or more, when observing the outdoors in daytime from indoors, the outdoors can be observed at the same brightness as indoors, so that sufficient visibility can be ensured.

In addition, if the transmittance is 40% or more, even if the brightness of the front side and the back side of the transparent display device is the same level, the back side of the transparent display device can be visually recognized without any problem. In addition, if the haze value is 10 or less, the contrast of the background can be sufficiently ensured. The so-called "transparent" does not matter whether it is given a color, that is, it can be colorless and transparent, or it can be colored and transparent. Furthermore, the transmittance refers to the value (%) measured by the method based on ISO9050. The haze value refers to the value measured by the method according to ISO14782.

(First Embodiment) <Configuration of Transparent Display Device> First, referring to FIG. 1 and FIG. 2, the configuration of the transparent display device of the first embodiment will be described. FIG. 1 is a schematic partial plan view showing an example of the transparent display device of the first embodiment. Figure 2 is a cross-sectional view taken along the line II-II of Figure 1; Furthermore, of course, the right-handed xyz orthogonal coordinates shown in Figs. 1 and 2 are used to facilitate the description of the positional relationship of the constituent elements. Generally, the positive direction of the z-axis is vertically upward, and the xy plane is a horizontal plane.

As shown in FIGS. 1 and 2, the transparent display device of this embodiment includes a transparent substrate 10, a light-emitting portion 20, an IC chip 30, wiring 40, and a sealing layer 50. The display area 101 of the transparent display device is composed of a plurality of pixels and is used to display the image area. Furthermore, the image contains text. As shown in FIG. 1, the display area 101 is composed of a plurality of pixels arranged in a column direction (x-axis direction) and a row direction (y-axis direction). In FIG. 1, the figure shows a part of the display area 101, and each figure shows 2 pixels in the column direction and the row direction, that is, the total figure shows 4 pixels. Here, one pixel PIX is surrounded by a single-dot chain line and shown in the figure. In addition, in FIG. 1, the transparent substrate 10 and the sealing layer 50 shown in FIG. 2 are omitted. Furthermore, FIG. 1 is a top view, in order to make it easy to understand, the light-emitting part 20 and the IC chip 30 are marked with points.

<Planar arrangement of light-emitting part 20, IC chip 30, and wiring 40> First, referring to FIG. 1, the planar arrangement of light-emitting part 20, IC (Integrated Circuit) chip 30, and wiring 40 will be described. As shown in FIG. 1, the pixels PIX surrounded by single-dot chain lines are arranged in a matrix with a pixel pitch Px in the column direction (x-axis direction) and a pixel pitch Py in the row direction (y-axis direction). Here, as shown in FIG. 1, each pixel PIX includes a light-emitting portion 20 and an IC chip 30. That is, the light emitting unit 20 and the IC chip 30 are arranged in a matrix form at a pixel pitch Px in the column direction (x-axis direction) and at a pixel pitch Py in the row direction (y-axis direction). Furthermore, as long as they are arranged at a specific pixel pitch in a specific direction, the arrangement of the pixels PIX, that is, the light-emitting portion 20, is not limited to the matrix shape.

As shown in FIG. 1, the light-emitting part 20 of each pixel PIX includes at least one light-emitting diode element (hereinafter referred to as an LED element). That is, the transparent display device of this embodiment is a display device using LED elements for each pixel PIX, and is called an LED display or the like.

In the example of FIG. 1, each light-emitting part 20 includes a red LED element 21, a green LED element 22, and a blue LED element 23. The LED elements 21 to 23 correspond to sub pixels (sub pixels) constituting one pixel. In this way, each light-emitting portion 20 has LED elements 21 to 23 that emit the three primary colors of light, namely red, green, and blue light, so the transparent display device of this embodiment can display a full-color image. Furthermore, each light-emitting part 20 may also include more than two LED elements of the same color system. In this way, the dynamic range of the image can be expanded.

The LED elements 21 to 23 are so-called micro LED elements having a small size. Specifically, the width (length in the x-axis direction) and length (length in the y-axis direction) of the LED element 21 on the transparent substrate 10 are, for example, 100 μm or less, preferably 50 μm or less, and more preferably 20 μm. the following. The same is true for the LED elements 22 and 23. The lower limit of the width and length of the LED element is 3 μm or more depending on the manufacturing conditions, etc., for example. Furthermore, the dimensions of the LED elements 21-23 in FIG. 1, that is, the width and the length are the same, but they can also be different from each other.

In addition, the area occupied by each of the LED elements 21 to 23 on the transparent substrate 10 is, for example, 10,000 μm ² or less, preferably 1,000 μm ² or less, and more preferably 100 μm ² or less. Furthermore, the lower limit of the area occupied by one LED element is, for example, 10 μm ² or more, depending on various manufacturing conditions. Here, in this specification, the area occupied by constituent members such as LED elements or wiring refers to the area in the xy plan view in FIG. 1. In addition, the shape of the LED elements 21 to 23 shown in FIG. 1 is a rectangular shape, but it is not particularly limited. For example, it may have a square shape, a hexagonal shape, a cone structure, a column shape, and the like.

Here, the LED elements 21 to 23 have, for example, a mirror structure for efficiently extracting light to the viewing side. Therefore, the transmittance of the LED elements 21 to 23 is as low as, for example, 10% or less. However, in the transparent display device of the present embodiment, as described above, the LED elements 21 to 23 having a small size ^{with an area of 10,000 μm 2 or less are used.} Therefore, even when the transparent display device is observed at a close distance from several 10 cm to 2 m, the LED elements 21 to 23 are hardly visible. In addition, the area with a low transmittance in the display area 101 is narrow, and the visibility on the back side is excellent. Moreover, the degree of freedom of arrangement of the wiring 40 and the like is also large. Furthermore, the so-called "area with a low transmittance in the display area 101" is, for example, an area with a transmittance of 20% or less. The same goes for the following.

In addition, since the LED elements 21 to 23 of small sizes are used, even if the transparent display device is bent, the LED elements are not easily damaged. Therefore, the transparent display device of this embodiment can be used by being installed on a curved transparent plate like a window glass for an automobile, or enclosed between two curved transparent plates. Here, if a flexible material is used as the transparent substrate 10, the transparent display device of this embodiment can be bent.

The illustrated LED elements 21 to 23 are of a chip type, but are not particularly limited. The LED elements 21 to 23 may not be encapsulated by resin, and may be encapsulated in whole or in part. The encapsulating resin may be one that has a lens function and can improve the utilization rate of light or the extraction efficiency of light to the outside. In this case, the LED elements 21 to 23 may be separately packaged, or the three LED elements 21 to 23 may be packaged together to form a 3-in-1 chip. Or, each LED element can emit light at the same wavelength, but can extract light of different wavelengths according to the phosphor contained in the encapsulating resin.

Furthermore, when the LED elements 21 to 23 are packaged, the size and area of the above-mentioned LED element are the size and area in the packaged state, respectively. When three LED elements 21 to 23 are packaged together, the area of each LED element is one-third of the total area.

The LED elements 21 to 23 are not particularly limited, and are, for example, inorganic materials. The red LED element 21 is, for example, AlGaAs, GaAsP, GaP, or the like. The green LED element 22 is, for example, InGaN, GaN, AlGaN, GaP, AlGaInP, ZnSe, etc. The blue LED element 23 is, for example, InGaN, GaN, AlGaN, ZnSe, or the like.

The luminous efficiency of the LED elements 21-23, that is, the energy conversion efficiency, is, for example, 1% or more, preferably 5% or more, and more preferably 15% or more. If the luminous efficiency of the LED elements 21-23 is 1% or more, even the micro-sized LED elements 21-23 as described above can obtain sufficient brightness, and can be used as a display device in the daytime. In addition, if the luminous efficiency of the LED element is 15% or more, heat generation is suppressed and it is easy to be enclosed in the laminated glass using the resin adhesive layer.

The LED elements 21-23 are grown by, for example, the liquid phase growth method, the HVPE (Hydride Vapor Phase Epitaxy) method, the MOCVD (Metal Organic Chemical Vapor Deposition, metal organic chemical vapor deposition) method, etc. Then the crystal is cut to obtain. The obtained LED elements 21 to 23 are mounted on the transparent substrate 10. Alternatively, the LED elements 21 to 23 can also be formed by peeling it from the semiconductor wafer by a method such as micro-transfer and transferring it to the transparent substrate 10.

The pixel pitches Px and Py are, for example, 100-3000 μm, respectively, preferably 180-1000 μm, and more preferably 250-400 μm. By setting the pixel pitches Px and Py to the above ranges, sufficient display capability can be ensured and higher transparency can be achieved. In addition, it is possible to suppress the diffraction phenomenon that may occur due to the light from the back side of the transparent display device. Furthermore, the pixel density of the display area 101 of the transparent display device of this embodiment is, for example, 10 ppi or more, preferably 30 ppi or more, and more preferably 60 ppi or more.

In addition, the area of one pixel PIX can be represented by Px×Py. The area of one pixel is, for example, 1×10 ⁴ μm ² -9×10 ⁶ μm ² , preferably 3×10 ⁴ -1×10 ⁶ μm ² , more preferably 6×10 ⁴ -2×10 ⁵ μm ² . By setting the area of one pixel to 1×10 ⁴ μm ² to 9×10 ⁶ μm ² , proper display capability can be ensured and the transparency of the display device can be improved. The area of one pixel may be appropriately selected according to the size, use, viewing distance, and the like of the display area 101.

The ratio of the area occupied by the LED elements 21 to 23 relative to the area of one pixel is, for example, 30% or less, preferably 10% or less, more preferably 5% or less, and even more preferably 1% or less. By setting the ratio of the area occupied by the LED elements 21 to 23 with respect to the area of one pixel to 30% or less, transparency and visibility on the back side are improved.

In FIG. 1, in each pixel, three LED elements 21 to 23 are arranged in a row along the positive x-axis direction in this order, but it is not limited to this. For example, the arrangement order of the three LED elements 21-23 can also be changed. In addition, the three LED elements 21 to 23 may be arranged in the y-axis direction. Alternatively, the three LED elements 21 to 23 may be arranged at the vertices of the triangle.

In addition, as shown in FIG. 1, when each light-emitting portion 20 includes a plurality of LED elements 21 to 23, the distance between the LED elements 21 to 23 of the light-emitting portion 20 is, for example, 100 μm or less, preferably 10 μm or less. In addition, the LED elements 21 to 23 may be arranged in contact with each other. Thereby, it is easy to make the first power supply branch line 41a common, and the aperture ratio can be increased.

Furthermore, in the example of FIG. 1, the arrangement order, arrangement direction, etc. of the plurality of LED elements of each light-emitting portion 20 are the same as each other, but they may be different. In addition, when each light-emitting portion 20 includes three LED elements that emit light of different wavelengths, it is also possible to arrange the LED elements in the x-axis direction or the y-axis direction in a part of the light-emitting portions 20, and the other light-emitting portions In the portion 20, LED elements of various colors are arranged at the vertices of a triangle.

In the example of FIG. 1, the IC chip 30 is configured for each pixel PIX to drive the light-emitting part 20. Specifically, the IC chip 30 is connected to each of the LED elements 21 to 23 via a drive line 45, and the LED elements 21 to 23 can be driven individually. Furthermore, the IC chip 30 can also be configured for every plurality of pixels to drive the plurality of pixels connected to each IC chip 30. For example, if one IC chip 30 is arranged for every four pixels, the number of IC chips 30 can be reduced to 1/4 of the example in FIG. 1, and the area occupied by IC chips 30 can be reduced.

The area of the IC chip 30 is, for example, 100,000 μm ² or less, preferably 10,000 μm ² or less, and more preferably 5,000 μm ² or less. The transmittance of the IC chip 30 is as low as 20% or less. However, by using the IC chip 30 of the above-mentioned size, the area with a lower transmittance in the display area 101 is narrowed, and the visibility on the back side is improved.

The IC chip 30 is, for example, a combined integrated circuit provided with an analog area and a logic area. The analog area includes, for example, a current control circuit and a transformer circuit. Furthermore, an LED element with an IC chip formed by sealing the LED elements 21 to 23 and the IC chip 30 together with a resin can also be used. In addition, a circuit including a thin film transistor (TFT: Thin Film Transistor) may be used instead of the IC chip 30. Furthermore, the IC chip 30 is not essential.

As shown in FIG. 1, the wiring 40 includes a plurality of power lines 41, ground lines 42, column data lines 43, row data lines 44, and drive lines 45. In the example in FIG. 1, the power line 41, the ground line 42, and the row data line 44 extend along the y-axis direction. The row data line 43 extends along the x-axis direction.

In addition, in each pixel PIX, the power supply line 41 and the row data line 44 are arranged on the negative side of the x-axis compared to the light-emitting part 20 and the IC chip 30, and the ground line 42 is arranged closer to the light-emitting part 20 and the IC chip 30 The positive side of the x-axis. Here, the power line 41 is arranged on the negative side of the x-axis compared to the row data line 44. In addition, in each pixel PIX, the column data line 43 is arranged on the negative side of the y-axis compared to the light-emitting portion 20 and the IC chip 30.

Furthermore, as shown in FIG. 1, the power supply line 41 includes a first power supply branch line 41a and a second power supply branch line 41b. The details will be described below. The ground line 42 includes a ground branch line 42a. The row data line 43 has a row data branch line 43a. The row data line 44 includes a row data branch line 44a. The respective branch lines described above are included in the wiring 40.

As shown in FIG. 1, each power supply line 41 extending along the y-axis direction is connected to the light-emitting portion 20 and the IC chip 30 of each pixel PIX arranged side by side along the y-axis direction. In more detail, in each pixel PIX, the LED elements 21 to 23 are arranged side by side in the positive x-axis direction in this order on the side of the power line 41 in the positive x-axis direction. Therefore, the first power supply branch line 41a that branches from the power supply line 41 in the positive x-axis direction is connected to the end portions of the LED elements 21 to 23 on the positive side of the y-axis.

In addition, in each pixel PIX, the IC chip 30 is arranged on the negative side of the y-axis of the LED elements 21 to 23. Therefore, between the LED element 21 and the row data line 44, the second power supply branch line 41b that branches from the first power supply branch line 41a in the negative direction of the y-axis extends linearly and is connected to the positive y-axis of the IC chip 30 The x-axis negative direction side of the end of the direction side.

As shown in FIG. 1, each ground wire 42 extending along the y-axis direction is connected to the IC chip 30 of each pixel PIX arranged side by side along the y-axis direction. Specifically, the ground branch line 42 a branched from the ground line 42 in the negative x-axis direction extends linearly and is connected to the end of the IC chip 30 in the positive x-axis direction. Here, the ground line 42 is connected to the LED elements 21 to 23 via the ground branch line 42a, the IC chip 30, and the drive line 45.

As shown in FIG. 1, each row of data lines 43 extending along the x-axis direction is connected to the IC chip 30 of each pixel PIX arranged side by side in the x-axis direction (row direction). Specifically, the row data branch line 43a branched from the row data line 43 in the positive direction of the y-axis extends linearly, and is connected to the end of the IC chip 30 on the negative side of the y-axis. Here, the row data line 43 is connected to the LED elements 21-23 through the row data branch line 43a, the IC chip 30, and the drive line 45.

As shown in FIG. 1, each row of data lines 44 extending along the y-axis direction is connected to the IC chip 30 of each pixel PIX arranged side by side along the y-axis direction (row direction). Specifically, the row data branch line 44a that branches toward the positive x-axis direction of the self-data line 44 extends linearly, and is connected to the end of the IC chip 30 in the negative x-axis direction. Here, the row data line 44 is connected to the LED elements 21 to 23 via the row data branch line 44a, the IC chip 30, and the drive line 45.

In each pixel PIX, the drive line 45 connects the LED elements 21 to 23 and the IC chip 30. Specifically, in each pixel PIX, three drive lines 45 extend in the y-axis direction, and each connect the end on the negative y-axis side of the LED elements 21 to 23 and the end on the positive y-axis of the IC chip 30 .

Furthermore, the arrangement of the power line 41, the ground line 42, the column data line 43, the row data line 44, and the branch lines thereof, and the drive line 45 shown in FIG. 1 is only an example after all, and can be changed appropriately. For example, at least one of the power line 41 and the ground line 42 may extend along the x-axis direction instead of the y-axis direction. Alternatively, it may be a configuration in which the power supply line 41 and the row data line 44 are exchanged.

In addition, it may be a structure in which the entire structure shown in FIG. 1 is inverted up and down, or a structure in which the entire structure is inverted left and right. Furthermore, the column data line 43, the row data line 44, and branch lines thereof, and the drive line 45 are not necessary.

The wiring 40 is, for example, a metal such as copper (Cu), aluminum (Al), silver (Ag), or gold (Au). Among them, from the viewpoint of low resistivity and cost saving, a metal mainly composed of copper or aluminum is preferred. In addition, the wiring 40 may be coated with materials such as titanium (Ti), molybdenum (Mo), copper oxide, carbon, etc., to reduce reflectivity. In addition, unevenness may be formed on the surface of the material to be coated.

The width of the wiring 40 in the display area 101 shown in FIG. 1 is, for example, 1-100 μm, preferably 3-20 μm. Since the width of the wiring 40 is 100 μm or less, even when the transparent display device is observed at a close distance of about 10 cm to 2 m, the wiring 40 is hardly visible, and the visibility on the back side is excellent. On the other hand, in the case of the following thickness range, if the width of the wiring 40 is set to 1 μm or more, it is possible to suppress an excessive increase in the resistance of the wiring 40, thereby suppressing a decrease in voltage or a decrease in signal strength. In addition, it is also possible to suppress a decrease in the heat conduction of the wiring 40.

Here, as shown in FIG. 1, when the wiring 40 mainly extends in the x-axis direction and the y-axis direction, there are cases in which light irradiated from the outside of the transparent display device generates along the x-axis direction and the y-axis direction. The cross diffracted image extending in the direction causes the visibility of the back side of the transparent display device to decrease. By reducing the width of each wiring, the diffraction can be suppressed, and the visibility on the back side can be further improved. From the viewpoint of suppressing diffraction, the width of the wiring 40 may be 50 μm or less, preferably 10 μm or less, and more preferably 5 μm or less.

The resistivity of the wiring 40 is, for example, 1.0×10 ^-6 Ωm or less, preferably 2.0×10 ^-8 Ωm or less. In addition, the thermal conductivity of the wiring 40 is, for example, 150 to 5,500 W/(m∙K), preferably 350 to 450 W/(m∙K).

In the display area 101 shown in FIG. 1, the distance between adjacent wirings 40 is, for example, 3-100 μm, preferably 5-30 μm. If there is an area where the wiring 40 is dense, the visibility on the back side may be hindered. By setting the distance between adjacent wirings 40 to be 3 μm or more, such obstruction of visual recognition can be suppressed. On the other hand, by setting the distance between adjacent wirings 40 to 100 μm or less, sufficient display capability can be ensured. Furthermore, when the distance between the wires 40 is not fixed due to the bending of the wires 40, etc., the above-mentioned distance between the adjacent wires 40 refers to the minimum value.

In addition, the greater the electric field intensity, the easier the migration of the wiring 40 will occur. Here, the electric field strength is defined by "voltage/interval between adjacent wires 40". Therefore, the greater the voltage applied to the wiring 40, and the smaller the distance between adjacent wirings 40, the greater the electric field strength, and the easier it is for migration to occur. The voltage applied to the wiring 40 is 1.5-5V, for example. As described above, if the distance between adjacent wirings 40 is 3-100 μm, the maximum electric field intensity is about 5 V/3 μm=1,670 kV/m.

The ratio of the area occupied by the wiring 40 to the area of one pixel is, for example, 30% or less, preferably 10% or less, more preferably 5% or less, and even more preferably 3% or less. The transmittance of the wiring 40 is as low as, for example, 20% or less or 10% or less. However, by setting the ratio of the area occupied by the wiring 40 in one pixel to 30% or less, the area with a low transmittance in the display area 101 is narrowed, and the visibility on the back side is improved. Furthermore, the total ratio of the area occupied by the light-emitting portion 20, the IC chip 30, and the wiring 40 relative to the area of one pixel is, for example, 30% or less, preferably 20% or less, and more preferably 10% or less.

<The cross-sectional structure of the transparent display device> Next, referring to FIG. 2, the cross-sectional structure of the transparent display device of this embodiment will be described. The transparent substrate 10 is a transparent material with insulating properties. In the example of FIG. 2, the transparent substrate 10 has a two-layer structure, and the two layers are the main substrate 11 and the adhesive layer 12. The main substrate 11 is described in detail below, and is, for example, a transparent resin. The adhesive layer 12 is, for example, an epoxy-based, acrylic-based, olefin-based, polyimide-based, phenol-based, and other transparent resin adhesive. Furthermore, the main substrate 11 may also be a relatively thin glass plate, and its thickness is, for example, 200 μm or less, preferably 100 μm or less. Moreover, the adhesive layer 12 is not essential.

Examples of the transparent resin constituting the main substrate 11 include polyester resins such as polyethylene terephthalate (PET) and polyethylene naphthalate (PEN); cycloolefin polymer (COP), cycloolefin Olefin resins such as copolymers (COC); cellulose resins such as cellulose, acetyl cellulose, and triacetate cellulose (TAC); imine resins such as polyimide (PI); polyethylene ( PE), polyvinyl chloride (PVC), polystyrene (PS), polyvinyl acetate (PVAc), polyvinyl alcohol (PVA), polyvinyl butyral (PVB) and other vinyl resins; polymethacrylic acid Acrylic resins such as methyl ester (PMMA) and ethylene-vinyl acetate copolymer resin (EVA); polyurethane resins, etc.

Among the aforementioned materials that can be used for the main substrate 11, from the viewpoint of improving heat resistance, polyethylene naphthalate (PEN) and polyimide (PI) are preferred. In addition, from the viewpoint of low birefringence and reduction of distortion or blooming of the image seen through the transparent substrate, cycloolefin polymer (COP), cycloolefin copolymer (COC), polyvinyl alcohol are preferred. Butyraldehyde (PVB) and so on. The above materials can be used alone, or two or more materials can be mixed and used. Furthermore, flat plates of different materials may be laminated to form the main substrate 11.

The thickness of the entire transparent substrate 10 is, for example, 3 to 1000 μm, preferably 5 to 200 μm. The internal transmittance of visible light of the transparent substrate 10 is, for example, 50% or more, preferably 70% or more, and more preferably 90% or more. In addition, the transparent substrate 10 may also have flexibility. With this, for example, the transparent display device can be mounted on a curved transparent plate or sandwiched between two curved transparent plates and used. Also, it may be a material that shrinks when heated to 100°C or higher.

As shown in FIG. 2, the LED elements 21 to 23 and the IC chip 30 are arranged on the transparent substrate 10, that is, the adhesive layer 12, and are connected to the wiring 40 arranged on the transparent substrate 10. In the example of FIG. 2, the wiring 40 is composed of a first metal layer M1 formed on the main substrate 11 and a second metal layer M2 formed on the adhesive layer 12.

The thickness of the wiring 40, that is, the total of the thickness of the first metal layer M1 and the thickness of the second metal layer M2 is, for example, 0.1-10 μm, preferably 0.5-5 μm. The thickness of the first metal layer M1 is, for example, about 0.5 μm, and the thickness of the second metal layer M2 is, for example, about 3 μm.

In detail, as shown in FIG. 2, the ground wire 42 extending in the y-axis direction has a two-layer structure including a first metal layer M1 and a second metal layer M2 because of a large amount of current. That is, at the location where the ground wire 42 is provided, the adhesive layer 12 is removed, and the second metal layer M2 is formed on the first metal layer M1. Although not shown in FIG. 2, the power supply line 41, the column data line 43, and the row data line 44 shown in FIG. 1 also have a two-layer structure including a first metal layer M1 and a second metal layer M2. .

Here, as shown in FIG. 1, the power line 41, the ground line 42, and the row data line 44 extending along the y-axis direction cross the row data line 43 extending along the x-axis direction. Although not shown in FIG. 2, at the intersection, the column data line 43 is composed of only the first metal layer M1, and the power supply line 41, the ground line 42, and the row data line 44 are composed of only the second metal layer M2. . Furthermore, at this intersection, an adhesive layer 12 is provided between the first metal layer M1 and the second metal layer M2, so that the first metal layer M1 and the second metal layer M2 are insulated. Similarly, at the intersection of the row data line 44 and the first power branch line 41a shown in FIG. 1, the first power branch line 41a is composed of only the first metal layer M1, and the row data line 44 is composed of only the second metal layer M2. constitute.

In the example of FIG. 2, the ground branch line 42a, the drive line 45, and the first power branch line 41a are composed of only the second metal layer M2, and cover the LED elements 21 to 23 and the ends of the IC chip 30. form. Although not shown in FIG. 2, the second power supply branch line 41b, the row data branch line 43a, and the row data branch line 44a are similarly composed of only the second metal layer M2.

Furthermore, as described above, the first power supply branch line 41a is composed of only the first metal layer M1 at the intersection with the row data line 44, and only the second metal layer M2 is composed of the other parts. In addition, metal pads made of copper, silver, gold, etc. may be arranged on the wiring 40 formed on the transparent substrate 10, and at least one of the LED elements 21 to 23 and the IC chip 30 may be arranged thereon.

The sealing layer 50 is formed on substantially the entire surface of the transparent substrate 10 so as to cover the light-emitting portion 20, the IC chip 30, and the wiring 40. The sealing layer 50 is a transparent resin with a water absorption rate of 1% or less after hardening. The water absorption rate of the transparent resin after hardening is more preferably 0.1% or less, and still more preferably 0.01% or less. With this configuration, it is possible to provide a transparent display device with excellent reliability due to the suppression of migration of the wiring 40 caused by moisture in the sealing layer 50. Furthermore, the water absorption rate refers to the value (%) measured in accordance with the B method of JIS7209.

The transparent resin constituting the sealing layer 50 is, for example, olefin-based resins such as cycloolefin polymer (COP) and cycloolefin copolymer (COC); polymethyl methacrylate (PMMA), ethylene-vinyl acetate copolymer resin (EVA) Acrylic resins such as; Silicone resins such as silicone resins. In addition, a transparent resin that does not contain a hydroxyl group (OH group) has a low water absorption rate after hardening, which is preferable.

The thickness of the sealing layer 50 is, for example, 3 to 1000 μm, preferably 5 to 200 μm. The internal transmittance of visible light of the sealing layer 50 is, for example, 50% or more, preferably 70% or more, and more preferably 90% or more.

The peel adhesion strength between the sealing layer 50 and the transparent substrate 10 is preferably 1 N/25 mm or more. The same applies to the peel adhesion strength between the sealing layer 50 and the wiring 40. Here, the peel adhesion strength refers to the value measured by a method based on JIS K6854-1 (90° peeling).

From the viewpoint of improving adhesion, the difference between the contact angle of water with respect to the transparent substrate 10 and the contact angle of water with respect to the sealing layer 50 is preferably 30° or less. The same is true for the difference between the contact angle of water with respect to the wiring 40 and the contact angle of water with respect to the sealing layer 50. Here, the contact angle of water refers to the value measured in accordance with JIS R3257.

In addition, irregularities may be formed on the surface of the transparent substrate 10 or the wiring 40 to improve adhesion by the anchoring effect. By improving the adhesiveness of the sealing layer 50, the migration of the wiring 40 caused by moisture infiltrated from the outside can be suppressed.

As explained above, in the transparent display device of this embodiment, the sealing layer 50 covering the wiring 40 formed on the transparent substrate 10 is a transparent resin with a water absorption rate of 1% or less after curing. Therefore, it is possible to provide a transparent display device with excellent reliability due to the suppression of migration of the wiring 40 caused by moisture in the sealing layer 50.

<Method of manufacturing transparent display device> Next, referring to FIGS. 2 to 10, an example of the method of manufacturing the transparent display device of the first embodiment will be described. 3 to 10 are cross-sectional views showing an example of the method of manufacturing the transparent display device of the first embodiment. 3 to 10 are cross-sectional views corresponding to FIG. 2.

First, as shown in FIG. 3, after the first metal layer M1 is formed on substantially the entire surface of the main substrate 11, the first metal layer M1 is patterned by the photolithography method to form the lower layer wiring. Specifically, at positions where the power line 41, the ground line 42, the column data line 43, and the row data line 44 shown in FIG. 1 are formed, the lower wiring is formed by the first metal layer M1. Furthermore, no lower-layer wiring is formed at the intersection of the power line 41, the ground line 42, and the row data line 44 and the column data line 43.

Next, as shown in FIG. 4, after the adhesive layer 12 is formed on substantially the entire surface of the main substrate 11, the LED elements 21 to 23 and the IC chip 30 are mounted on the adhesive layer 12 having adhesiveness. Next, as shown in FIG. 5, after the photoresist layer FR1 is formed on substantially the entire surface of the transparent substrate 10 including the main substrate 11 and the adhesive layer 12, the photoresist layer on the first metal layer M1 is patterned. The layer FR1 is removed. Here, the photoresist layer FR1 is not removed at the intersection of the column data line 43, the power line 41, the ground line 42, and the row data line 44 shown in FIG.

Next, as shown in FIG. 6, the adhesive layer 12 in the portion where the photoresist layer FR1 has been removed is removed by dry etching, so that the first metal layer M1, that is, the lower wiring is exposed. Secondly, as shown in FIG. 7, the photoresist layer FR1 on the transparent substrate 10 is completely removed. Thereafter, a seed layer for plating (not shown) is formed on substantially the entire surface of the transparent substrate 10.

Next, as shown in FIG. 8, after the photoresist layer FR2 is formed on substantially the entire surface of the transparent substrate 10, the photoresist layer FR2 at the position where the upper wiring is formed is removed by patterning, so that the seed layer is exposed. Secondly, as shown in FIG. 9, on the seed layer where the photoresist layer FR2 has been removed, the second metal layer M2 is formed by plating. Thereby, the upper layer wiring is formed by the second metal layer M2.

Next, as shown in FIG. 10, the photoresist layer FR2 is removed. Furthermore, the seed layer exposed by the removal of the photoresist layer FR2 is removed by etching. Finally, as shown in FIG. 2, a sealing layer 50 is formed on substantially the entire surface of the transparent substrate 10, thereby obtaining a transparent display device.

(Second embodiment) <Configuration of laminated glass with transparent display device> Next, referring to FIG. 11, the configuration of the laminated glass of the second embodiment will be described. Fig. 11 is a schematic plan view showing an example of the laminated glass of the second embodiment. As shown in Fig. 11, the laminated glass 200 of the second embodiment is formed by bonding a pair of glass plates, and the transparent display device 100 of the first embodiment is provided between the pair of glass plates. The laminated glass 200 shown in FIG. 11 is used for front window glass in automobile window glass, but it is not particularly limited.

As shown in FIG. 11, for example, a black shielding portion 201 is provided on the entire periphery of the laminated glass 200. The shielding portion 201 shields sunlight and protects the adhesive used to assemble the laminated glass 200 in the automobile from ultraviolet rays. In addition, the shielding portion 201 prevents the adhesive from being visually recognized from the outside.

As shown in FIG. 11, in addition to the display area 101 shown in FIG. 1, the transparent display device 100 further includes a non-display area 102 disposed around the display area. Here, as described in the first embodiment, the display area 101 is composed of a plurality of pixels and is used to display an image area, so detailed description is omitted. Furthermore, FIG. 11 is a top view. For easy understanding, the non-display area 102 and the shielding portion 201 are marked with dots.

The non-display area 102 is an area where no pixels are provided and no image is displayed. In the non-display area 102, thick wirings connected to the power line 41, the ground line 42, the column data line 43, and the row data line 44 shown in FIG. 1 are densely arranged. The width of the wiring of the non-display area 102 is, for example, 100-10,000 μm, preferably 100-5,000 μm. The distance between the wirings is, for example, 3 to 5,000 μm, and preferably 50 to 1,500 μm.

Therefore, the display area 101 is transparent, and in contrast, the non-display area 102 is opaque and cannot be seen in the vehicle. Here, if the non-display area 102 is visible, the design of the laminated glass 200 is reduced. Therefore, in the laminated glass 200 of the second embodiment, at least a part of the non-display area 102 of the transparent display device 100 is provided in the shielding portion 201. The non-display area 102 provided in the shielding portion 201 is shielded by the shielding portion 201 and thus cannot be seen. Therefore, compared with the case where the entire non-display area 102 is visible, the design of the laminated glass 200 is improved.

(Third embodiment) <Configuration of transparent display device> Next, referring to FIG. 12, the configuration of the transparent display device of the third embodiment will be described. FIG. 12 is a schematic partial plan view showing an example of the transparent display device of the third embodiment. As shown in FIG. 12, the transparent display device of this embodiment is provided with a sensor 70 in the display area 101 in addition to the configuration of the transparent display device of the first embodiment.

In the example shown in FIG. 12, the sensor 70 is disposed between specific pixels PIX, and is connected to the power line 41 and the ground line 42. In addition, the self-sensor 70 outputs the detection data of the sensor 70 through the data output line 46 extending along the y-axis direction. The sensor 70 may be single or plural. It is also possible that a plurality of sensors 70 are arranged along the x-axis direction or the y-axis direction at a specific interval, for example.

In the following description, a case where the transparent display device of this embodiment is mounted on a front window glass of an automobile window glass will be described. That is, the transparent display device of this embodiment can also be applied to the laminated glass of the second embodiment.

The sensor 70 is, for example, an illuminance sensor (such as a light-receiving element) for sensing the illuminance inside and outside the vehicle. For example, according to the illuminance sensed by the sensor 70, the brightness of the display area 101 realized by the LED elements 21-23 is controlled. For example, with respect to the interior illuminance, the greater the exterior illuminance, the greater the brightness of the display area 101 realized by the LED elements 21-23. With this structure, the visibility of the transparent display device is further improved.

In addition, the sensor 70 can also be an infrared sensor (such as a light-receiving element) or an image sensor (such as CMOS (Complementary Metal-Oxide-Semiconductor, Complementary Metal-Oxide-Semiconductor, Semiconductor) image sensor). For example, only when the sensor 70 senses the line of sight, the transparent display device is driven. For example, when a transparent display device is used in the case of the laminated glass shown in FIG. 11, as long as the observer does not direct the line of sight to the transparent display device, the transparent display device will not block the observer's line of sight range, which is preferable. Alternatively, the sensor 70, which is an image sensor, can also be used to detect the motion of the observer, and based on the motion, for example, turn on or turn off the transparent display device, or switch the display screen. [Example]

Hereinafter, examples of the present invention are illustrated, but the present invention is not limited to the following examples and explained. For the transparent display devices of Examples 1 and 2, a continuous energization test was performed under a high temperature and high humidity environment with a temperature of 65°C and a humidity of 85% to investigate the changes in brightness before and after the test. Examples 1 and 2 are examples of the present invention. First, referring to FIGS. 2 to 10, the manufacturing method of the transparent display device of Example 1 will be described.

<Example 1> In the following, the manufacturing method of the transparent display device of Example 1 will be described. As shown in Figure 3, a glass plate (AN-100 manufactured by AGC) with a thickness of 0.7 mm is used as the main substrate 11, and a Ti film with a thickness of 0.04 μm, The first metal layer M1 has a three-layer structure of a Cu film with a thickness of 0.60 μm and a Ti film with a thickness of 0.10 μm. After that, the first metal layer M1 is patterned by a photolithography method to form lower-layer wiring.

Next, as shown in FIG. 4, after forming an adhesive layer 12 of epoxy resin (InterVia8023 manufactured by DowDuPont) on substantially the entire surface of the main substrate 11, the LED is mounted on the adhesive layer 12 with adhesive Components 21-23 and IC chip 30. Next, as shown in FIG. 5, after the photoresist layer FR1 is formed on substantially the entire surface of the transparent substrate 10 including the main substrate 11 and the adhesive layer 12, the first metal layer M1 and the IC chip 30 are patterned. The upper photoresist layer FR1 is removed.

Next, as shown in FIG. 6, the adhesive layer 12 at the portion where the photoresist layer FR1 has been removed is removed by dry etching, so that the first metal layer M1, that is, the lower wiring is exposed. Secondly, as shown in FIG. 7, the photoresist layer FR1 on the transparent substrate 10 is completely removed. After that, a plating seed layer including a W-10Ti alloy film with a thickness of 0.1 μm and a Cu film with a thickness of 0.15 μm is formed on substantially the entire surface of the transparent substrate 10.

Next, as shown in FIG. 8, after the photoresist layer FR2 is formed on substantially the entire surface of the transparent substrate 10, the photoresist layer FR2 at the position where the upper wiring is formed is removed by patterning, so that the seed layer is exposed. Secondly, as shown in FIG. 9, on the seed layer where the photoresist layer FR2 has been removed, a second metal layer M2 containing Cu with a thickness of 3.0 μm is formed by plating as the upper wiring.

Next, as shown in FIG. 10, the photoresist layer FR2 is removed. Furthermore, the seed layer exposed by the removal of the photoresist layer FR2 is removed by etching. Finally, as shown in FIG. 2, a silicone elastomer (Sylgard 184 manufactured by Toray Dow Corning Co., Ltd.) is coated on substantially the entire surface of the transparent substrate 10 by pouring to form a sealing layer 50. Thereafter, it was kept at room temperature for 48 hours to harden the sealing layer 50. In this way, the transparent display device of Example 1 was manufactured.

The water absorption rate of the sealing layer 50 of the transparent display device of Example 1 was 0.06%. In the transparent display device of Example 1, the brightness before the continuous energization test was 181 cd/m ² , while the brightness after the test was 115 cd/m ² , the brightness reduction stopped at 36%, and the beam maintenance rate was the initial value Above 50%. Therefore, it is inferred that the water absorption rate of the sealing layer 50 is low, and migration is suppressed.

<Example 2> Next, referring to FIG. 13, the manufacturing method of the transparent display device of Example 2 will be described. FIG. 13 is a cross-sectional view of the transparent display device of Example 2. FIG. 13 is a cross-sectional view corresponding to FIG. 2. As shown in FIG. 13, in the transparent display device of Example 2, a glass plate 60 is provided on the sealing layer 50. That is, the main substrate 11 made of glass and the glass plate 60 are laminated and vitrified by the sealing layer 50. In the transparent display device of Example 2, a cycloolefin polymer (COP) film (ZEONOR film ZF14 manufactured by Zeon Corporation) was used as the sealing layer 50.

The steps shown in FIGS. 3 to 10, that is, the steps before the step of forming the sealing layer 50 shown in FIG. 13 are the same as in Example 1, so the description is omitted. Next, as shown in FIG. 13, in order to form the sealing layer 50, a COP film with a thickness of 0.762 mm covers substantially the entire surface of the transparent substrate 10, and a glass plate 60 with a thickness of 1.8 mm (a float made by AGC) is used. French glass) covered with COP film. That is, the COP film for the sealing layer 50 is sandwiched between the transparent substrate 10 and the glass plate 60.

Then, the pressure is reduced to less than 5 Pa and the reduced pressure is maintained, and the COP film is heated at 100°C near the glass transition temperature Tg of the COP film for 1 hour, so that the COP film is temporarily pressure-bonded to the transparent substrate 10 and the glass plate 60 . Furthermore, in the autoclave device, heating was carried out at 10 atmospheric pressure and 130°C for 20 minutes to manufacture the transparent display device of Example 2.

Furthermore, the transparent display device of Example 2 shown in FIG. 13 is a structure in which a transparent display device is provided on a laminated glass sandwiched by a pair of glass plates (transparent base material 10 and glass plate 60), which is the second implementation Variations in the form of laminated glass. That is, the transparent substrate 10 may constitute one of a pair of glass plates. In addition, the cross-sectional structure of the laminated glass of the second embodiment shown in FIG. 11 is a structure in which another glass plate is provided on the outer side of the transparent substrate 10 of FIG. 13 (lower side in the drawing).

The water absorption rate of the sealing layer 50 of the transparent display device of Example 2 did not reach 0.01%. In the transparent display device of Example 2, the brightness before the continuous energization test was 121 cd/m ² , while the brightness after the test was 118 cd/m ² , and the brightness reduction was only 2.5%. That is, the beam maintenance rate is more than 95% of the initial value, which is an excellent result. Therefore, it is inferred that the water absorption rate of the sealing layer 50 is extremely low, and migration is significantly suppressed.

In addition, the present invention is not limited to the above-mentioned embodiment, and can be appropriately changed without departing from the gist. For example, the transparent display device may also have a touch panel function. Furthermore, in addition to being applicable to transparent display devices with LED elements, the present invention can also be applied to transparent functional devices with micro-function devices. When the transparent functional device is mounted on the window glass of a car, the micro-function device is used to monitor the inside or outside of the car, for example. As such a micro-functional device, in addition to the aforementioned sensor 70, various antennas used in radars, etc., light-receiving elements used in lidars, and the like can be cited.

This application claims priority based on Japanese Patent Application No. 2019-130927 filed on July 16, 2019, and incorporates all the contents disclosed herein.

10: Transparent base material 11: Main substrate 12: Adhesive layer 20: Light emitting part 21: LED element 22: LED element 23: LED element 30: IC chip 40: Wiring 41: Power supply line 41a: First power supply branch line 41b: The second power supply branch line 42: Ground line 42a: Ground branch line 43: Row data line 43a: Row data branch line 44: Row data line 44a: Row data branch line 45: Drive line 46: Data output line 50: Sealing layer 60 : Glass plate 70: sensor 100: transparent display device 101: display area 102: non-display area 200: laminated glass (window glass) 201: shielding portion FR1: photoresist layer FR2: photoresist layer M1: first metal Layer M2: 2nd metal layer PIX: Pixel

FIG. 1 is a schematic partial plan view showing an example of the transparent display device of the first embodiment. Fig. 2 is a cross-sectional view taken along the cut line II-II in Fig. 1. Fig. 3 is a cross-sectional view showing an example of the method of manufacturing the transparent display device of the first embodiment. Fig. 4 is a cross-sectional view showing an example of the method of manufacturing the transparent display device of the first embodiment. FIG. 5 is a cross-sectional view showing an example of the method of manufacturing the transparent display device of the first embodiment. Fig. 6 is a cross-sectional view showing an example of the method of manufacturing the transparent display device of the first embodiment. Fig. 7 is a cross-sectional view showing an example of the method of manufacturing the transparent display device of the first embodiment. Fig. 8 is a cross-sectional view showing an example of the method of manufacturing the transparent display device of the first embodiment. Fig. 9 is a cross-sectional view showing an example of the method of manufacturing the transparent display device of the first embodiment. Fig. 10 is a cross-sectional view showing an example of the method of manufacturing the transparent display device of the first embodiment. Fig. 11 is a schematic plan view showing an example of the laminated glass of the second embodiment. Fig. 12 is a schematic partial plan view showing an example of the transparent display device of the third embodiment. FIG. 13 is a cross-sectional view of the transparent display device of Example 2.

10: Transparent substrate

11: Main substrate

12: Adhesive layer

23: LED components

30: IC chip

41a: The first power branch line

42: Ground wire

42a: Ground branch line

45: drive line

50: Sealing layer

M1: The first metal layer

M2: The second metal layer

Claims (15)

A transparent display device, comprising: a transparent substrate; a light-emitting diode element, at least one light-emitting diode element is arranged on the transparent substrate for each pixel, and each has ^{an area of 10,000 μm 2} or less; a plurality of wirings, etc. Connected to each of the light-emitting diode elements; and a sealing layer covering the light-emitting diode elements and the plurality of wires arranged on the transparent substrate; and the water absorption rate of the sealing layer after hardening is 1% The following transparent resins. The transparent display device of claim 1, wherein the peel adhesion strength between the sealing layer and the plurality of wires is 1 N/25 mm or more. The transparent display device of claim 1 or 2, wherein the peel adhesion strength between the sealing layer and the transparent substrate is 1 N/25 mm or more. The transparent display device of claim 1 or 2, wherein the transparent resin is any one of olefin resin, acrylic resin, and silicon resin. The transparent display device of claim 4, wherein the transparent resin is a cycloolefin polymer or a cycloolefin copolymer. The transparent display device of claim 4, wherein the transparent resin is a silicone resin. The transparent display device of claim 1 or 2, wherein in the display area composed of the above-mentioned pixels, the interval between adjacent wirings among the plurality of wirings is 3-100 μm. Such as the transparent display device of claim 1 or 2, wherein the voltage applied to the plurality of wires is 1.5 V or more. Such as the transparent display device of claim 1 or 2, wherein the plurality of wires is a metal whose main component is copper or aluminum. For example, the transparent display device of claim 1 or 2, wherein the transparent display device is mounted on the window glass of a car, and is further provided with a sensor, which is arranged on the above-mentioned transparent substrate to monitor the inside and outside of the car At least any one. A laminated glass, comprising: a pair of glass plates, and a transparent display device provided between the pair of glass plates, the transparent display device comprising: a transparent substrate; a light-emitting diode element on the transparent substrate At least one is arranged for each pixel, and each has ^{an area of 10,000 μm 2} or less; a plurality of wires, which are connected to each of the light-emitting diode elements; and a sealing layer, which is covered and arranged on the transparent substrate The above-mentioned light-emitting diode element and the above-mentioned plurality of wires; and the above-mentioned sealing layer is a transparent resin with a water absorption rate of less than 1% after curing. For example, the laminated glass of claim 11, wherein the pair of glass plates is provided with an opaque shielding portion arranged on the periphery, and the transparent display device is provided with an opaque non-display area, which is arranged around the display area formed by the above-mentioned pixels And at least a part of the non-display area of the transparent display device is provided in the shielding portion of the pair of glass plates. Such as the laminated glass of claim 11 or 12, which is used for window glass of automobiles. Such as the laminated glass of claim 13, wherein the transparent display device is further provided with a sensor, and the sensor is disposed on the transparent substrate for monitoring at least one of the inside and outside of the vehicle. A method for manufacturing a transparent display device, which is based on a transparent substrate, for each pixel at least one ^{light-emitting diode element each having an area of 10,000 μm 2} or less is formed; and each of the light-emitting diode elements is connected A plurality of wirings; and forming a sealing layer covering the light-emitting diode elements and the plurality of wirings arranged on the transparent substrate; and the sealing layer is made of a transparent resin with a water absorption rate of 1% or less after curing .

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