TW202129439A - Mask for vapor deposition of metal material in pixel evaporating of oled - Google Patents

Abstract

Provided is a mask for vapor deposition of metal material in pixel evaporating of OLED. The mask includes an evaporation region and a non-evaporation region. The evaporation region includes a plurality of active portions and inactive portions that are spaced apart from each other along a length direction of the mask, wherein the active portions include a plurality of through holes including a plurality of small surface pores formed on one surface and a plurality of large surface pores formed on the other surface being opposite to the one surface and communicated with the small surface pores, a communication part connecting boundaries of the small surface pores and the large surface pores; and a first groove formed between the small surface pores on the one surface, and an opening area thereof is over 30% of that of the small surface pore, the number of the first groove located within the active portions is under 5.

Description

Mask for vapor deposition of metal materials for vapor deposition of OLED pixels

This application claims the priority of Korean Patent Application No. 10-2020-0007795 (filed on January 21, 2020), the entire content of which is incorporated herein by reference.

This embodiment relates to a mask for vapor deposition of a metal material used for vapor deposition of OLED pixels, which controls the recessed portion that may occur through surface treatment, so as to solve the vapor deposition defect that occurs thereby.

The display device is being applied to a variety of devices. For example, display devices are not only applied to small devices such as smart phones and tablet computers, but also large devices such as televisions, monitors, and public displays. In particular, the demand for ultra-high-definition UHD (Ultra High Definition) above 500 PPI (Pixel Per Inch) is increasing recently, and high-definition display devices are being applied to small devices as well as large devices. Therefore, attention to technologies for achieving low power and high definition is also increasing.

Commonly used display devices can be roughly classified into LCD (Liquid Crystal Display) and OLED (Organic Light Emitting Diode) according to driving methods.

As a display device driven by a liquid crystal (Liquid Crystal), the LCD has a CCFL (Cold Cathode Fluorescent Lamp) or LED (Light Emitting Diode) disposed below the liquid crystal. A display device that has a structure equivalent to a light source and is driven to adjust the amount of light emitted from the light source using the liquid crystal disposed on the light source.

In addition, as a display device driven by organic matter, OLED does not require a separate light source, and the organic matter itself can function as a light source, thereby being driven with low power. In addition, OLED can express infinite contrast, has a response speed that is about 1,000 times faster than LCD, and has excellent viewing angles. Therefore, OLED is attracting attention as a display device that can replace LCD.

In particular, in OLED, the organic matter contained in the light-emitting layer can be vapor-deposited on a substrate by a vapor deposition mask called a fine metal mask (FMM, Fine Metal Mask), and the vapor-deposited organic matter It can be formed into a pattern corresponding to the pattern formed on the vapor deposition mask to function as a pixel. The mask for vapor deposition is generally made of an Invar metal plate including iron (Fe) and nickel (Ni). Wherein, one surface and the other surface of the metal plate form a through hole connecting the one surface and the other surface, and the through hole can be formed at a position corresponding to the pixel pattern. Therefore, red (Red), green (Green), and blue (Blue) organic patterns can be formed. That is, an RGB pattern can be formed on the substrate.

On the other hand, in order to prepare a fine metal mask for high definition, a high etching factor is required. At this time, in order to apply a high etching factor, the adhesion between the metal plate and the photoresist layer should be increased. Furthermore, in order to improve the adhesion force, the surface of the metal plate is subjected to surface treatment. At this time, the surface treatment is performed with acid chemicals such as nitric acid, hydrochloric acid, sulfuric acid, and phosphoric acid.

Among them, the surface roughness of the metal plate changes according to the surface treatment conditions, and when the surface roughness of the metal plate is too high, the surface of the metal plate has recesses such as dents.

However, in the prior art, the recessed portion that occurs on the surface of the vapor deposition mask is not managed. That is, in the prior art, the recessed portion is not managed at all, or the vapor deposition mask including the recessed portion is regarded as defective. For example, in the prior art, the recessed portion that does not affect the through hole formed in the vapor deposition mask is not managed. Therefore, the recessed portion is due to the adhesion force between the substrate and the substrate when the pixel pattern is vapor-deposited. Decrease and vapor deposition defects occur. In addition, in the prior art, when a recessed portion occurs on the surface of the vapor deposition mask, it is regarded as a defect, and therefore, the yield of the vapor deposition mask is reduced.

Therefore, there is a need for a vapor deposition mask of a new structure that manages the recesses formed on the surface of the vapor deposition mask, so that the yield of the vapor deposition mask can be increased, and the vapor deposition performance can be improved.

The purpose of the embodiment is to provide a mask for vapor deposition that controls the number of recesses that can be formed on the surface of the mask for vapor deposition, thereby increasing the yield of the mask for vapor deposition.

In addition, the embodiment aims to provide a vapor deposition mask that can include a predetermined number or less of recesses on the surface of the vapor deposition mask, thereby reducing stress that may occur on the vapor deposition mask.

The technical problems that the proposed embodiments are intended to solve are not limited to the above technical problems, and those skilled in the art can clearly understand other technical problems that are not proposed through the following description.

In the vapor deposition mask of the metal material for OLED vapor deposition of the embodiment, the vapor deposition mask includes a vapor deposition area and a non-evaporation area, and the vapor deposition area includes a length along the vapor deposition mask A plurality of effective portions and ineffective portions separated in directions from each other, the effective portion includes: a plurality of small surface holes formed on one surface; a plurality of large surface holes formed on another surface opposite to the one surface , And communicate with the small surface hole; and a first recess formed between the plurality of small surface holes on the one surface, and the opening area is greater than 30% of the opening area of the small surface hole, and does not correspond to A plurality of the small surface holes are connected, and the total number of the concave portions in the plurality of the effective portions is 5 or less.

In addition, the number of the first concave portions included in each of the effective portions is three or less.

In addition, the effective portion includes a plurality of island portions located between the plurality of large-surface holes on the other surface, and the height difference between the plurality of island portions is within ±1 μm between.

In addition, the surface roughness Ra value of the one surface is in the range of 0.1 to 0.2 μm.

In addition, it further includes a second recess formed on the one surface and the other surface of the non-effective portion and the non-evaporated area.

In the embodiment, the surface of the vapor deposition mask includes at least one recess. At least one of the concave portions may be a concave portion generated when the metal plate material of the vapor deposition mask is surface-treated. In addition, the surface of the vapor deposition mask in the embodiment may include recesses capable of improving the conditions of vapor deposition performance. Specifically, in the embodiment, in the entire effective portion of one surface with the vapor deposition mask, the number of recesses whose opening area is between 30% and 80% of the opening area of the small surface hole is 5 or less. In other words, the effective portion of one surface of the vapor deposition mask in the embodiment can include 1 to 5 concave portions with an opening area between 30% and 80% of the opening area of the small surface hole. Among them, formed on one surface of the vapor deposition mask The predetermined number of recesses can function to disperse the stress of the vapor deposition mask, and therefore, it is possible to solve reliability problems such as bending of the vapor deposition mask. In addition, when one surface of the vapor deposition mask includes a recessed portion within a predetermined range, treating it as a sample can improve vapor deposition defects due to a decrease in adhesion between the recessed portion and the substrate.

100: Mask for vapor deposition

101: Surface

102: Surface

200: mask frame

300: Evaporated substrate

400: Organic vapor deposition container

500: vacuum chamber

AA: Effective part

AA1: Effective part

AA2: Effective part

AA3: Effective part

CA: Connecting part

Cx: diameter

Cy: diameter

DA: Evaporation area

DP: Evaporation pattern

E1: End

E2: End

ES1: the first inside surface

ES2: second inside surface

FA1: Frame fixed area

FA2: Frame fixed area

G1: The first recess

G2: second recess

Ga: recess

Gb: recess

Gc: recess

H: height

HF1: The first half-etched part

HF2: The second half-etched part

IA1: Separation area

IA2: Separation area

IS: Island Department

NDA: Non-evaporated area

OA: Outer edge area

OA1: Outer edge area

OA2: Outer edge area

OA3: Outer edge area

RB1: first rib

RB2: second rib

RB2-1: The second rib

RB2-2: The second second rib

T1: first thickness

T2: second thickness

TH: Through hole

TH1: First through hole

TH1-1: The first through hole

TH1-2: second through hole

TH2: second through hole

TH3: third through hole

TH4: Fourth through hole

UA: Invalid part

V1: Small surface hole

V1-1: The first small surface hole

V1-2: The second small surface hole

V2: Large surface hole

V2-1: The first large surface hole

V2-2: The second largest surface hole

W3: Aperture

W4: width/aperture

θ 1: the first tilt angle

θ 2: second tilt angle

The embodiments will be described in detail with reference to the following drawings, in which like reference numerals refer to similar elements, and among them:

1 to 3 are conceptual diagrams for explaining a process of vapor deposition of an organic substance on a substrate using the vapor deposition mask of the embodiment.

Fig. 4 is a plan view showing the vapor deposition mask of the embodiment.

Fig. 5 is a plan view showing an effective portion of the vapor deposition mask of the first embodiment.

Fig. 6 is a cross-sectional view showing the BB' direction or the C-C' direction of the embodiment of Fig. 5;

Fig. 7 is a diagram showing various types of recesses that have occurred on one surface of the vapor deposition mask.

Hereinafter, preferred embodiments of the present invention will be described in detail with reference to the drawings. However, the technical idea of the present invention is not limited to some of the illustrated embodiments, but can be implemented in various forms different from each other, and can be selectively combined and substituted to be used for multiple implementations within the scope of the technical idea of the present invention. One or more of multiple constituent elements between examples. In addition, as long as it is not specifically defined, the terms (including technical and scientific terms) used in the embodiments of the present invention can be interpreted as meanings commonly understood by those skilled in the art, and as previously defined terms, generally The terminology used can explain its meaning based on considering the meaning of the related technology in the text.

In addition, the terms used in the embodiments of the present invention are used to describe multiple embodiments, and the present invention is not limited thereto. In this specification, if not specifically mentioned, a singular sentence may also include the plural. When it is described as "A and (and) at least one (or more than one) of B and C", it may include , At least one of all combinations of C combination.

In addition, when describing the constituent elements of the embodiments of the present invention, terms such as first, second, A, B, (a), (b), etc. may be used. These terms are only used to distinguish this constituent element from another constituent element, and the nature or order or sequence of the corresponding constituent elements is not limited to this term.

In addition, when it is described that a component is "connected", "coupled" or "joined" with another component, it includes not only the case where the component is directly connected, coupled or joined with the other component, but also through When another structural element located between this structural element and the other structural element is "connected", "coupled" or "joined".

In addition, when it is described as "up or down" formed or arranged on each constituent element, upper or lower includes not only the case where two constituent elements are in direct contact with each other, but also includes one or more other constituent elements formed or arranged on two Between the two components.

In addition, when expressed as "up or down", based on one constituent element, not only the upward direction but also the downward direction are included.

Hereinafter, the vapor deposition mask of the embodiment will be described with reference to the drawings.

1 is a cross-sectional view showing an organic vapor deposition apparatus provided with a vapor deposition mask 100 of an embodiment, and FIG. 2 is a diagram showing how to install the vapor deposition mask 100 of the embodiment on a mask frame 200 Extended diagram.

1 and 2, the organic vapor deposition apparatus may include a vapor deposition mask 100, a mask frame 200, a vapor deposition substrate 300, an organic vapor deposition container 400, and a vacuum chamber 500.

The vapor deposition mask 100, the mask frame 200, the vapor deposition substrate 300, and the organic substance vapor deposition container 400 can be housed in the vacuum chamber 500. Therefore, the vapor deposition process through the vapor deposition mask 100 can be performed in a vacuum environment.

The vapor deposition mask 100 may be arranged on one surface of the vapor deposition substrate 300. Specifically, the vapor deposition mask 100 is disposed on the vapor deposition surface where the organic substance is vapor-deposited on both surfaces of the vapor deposition substrate 300 and can be fixed through the mask frame 200.

Therefore, the organic substance can be passed through the through hole TH formed in the vapor deposition mask 100, and the organic substance for forming the RGB pattern can be vapor-deposited on the vapor deposition surface of the vapor deposition substrate 300.

The vapor deposition mask 100 may be stretched in the opposite directions in the edge region arranged on the outermost edge of the vapor deposition mask 100. For example, with respect to the vapor deposition mask 100, one end of the vapor deposition mask 100 and the other end opposite to the end may be stretched in directions opposite to each other in the longitudinal direction of the vapor deposition mask 100 . Therefore, the stretching direction of the vapor deposition mask 100, the X-axis direction, and the longitudinal direction of the vapor deposition mask may all be the same direction.

In order to form pixels of the three primary colors of light, red (Red), green (Green), and blue (Blue) organic patterns may be formed on the substrate 300. That is, an RGB pattern can be formed on the substrate 300.

In the vacuum chamber 500, as a heat source and/or electric current are supplied to the crucible of the organic substance vapor deposition container 400, the organic substance can be vapor-deposited on the substrate 100.

FIG. 3 is a diagram showing that a plurality of through holes of the vapor deposition mask 100 are penetrated to form a plurality of vapor deposition patterns on the substrate 300.

3, the vapor deposition mask 100 may include a surface 101 and another surface 102 opposite to the surface.

The surface 101 of the vapor deposition mask 100 may include small surface holes V1, and the other surface may include large surface holes V2. For example, one surface 101 and the other surface 102 of the vapor deposition mask 100 may include a plurality of small surface holes V1 and a plurality of large surface holes V2, respectively. For example, the vapor deposition mask 100 may include one surface 101 formed with a plurality of small surface holes V1 and another surface 102 formed with a plurality of large surface holes V2 overlapping the plurality of small surface holes V1 in the thickness direction.

In addition, the vapor deposition mask 100 may include through holes TH. The through hole TH can communicate through a communication portion CA connecting the boundary between the small surface hole V1 and the large surface hole V2. For example, the communication portion CA may refer to a portion where the small surface hole V1 and the large surface hole V2 intersect each other in the thickness direction.

In addition, the vapor deposition mask 100 may include a first inner surface ES1 in the small surface hole V1. The vapor deposition mask 100 may include a second inner surface ES2 and a third inner surface ES3 in the large surface hole V2. The through hole TH may be formed by the first inner surface ES1 in the small surface hole V1 and the second inner surface ES2 in the large surface hole V2 communicating with each other. For example, the first inner surface ES1 in a small surface hole V1 may form a through hole by communicating with the second inner surface ES2 in a large surface hole V2. Therefore, the number of the through holes TH may correspond to the number of the small surface holes V1 and the large surface holes V2.

The width of the large surface hole V2 may be greater than the width of the small surface hole V1. At this time, the width of the small surface hole V1 can be measured on one surface 101 of the vapor deposition mask 100, and the width of the large surface hole V2 can be measured on the other surface 102 of the vapor deposition mask 100. Measurement.

The small surface hole V1 may be formed facing the substrate 300. The small surface hole V1 may be formed close to the substrate 300. Therefore, the small surface hole V1 may have a shape corresponding to the vapor deposition material, that is, the vapor deposition pattern (DP).

The large surface hole V2 may be configured to face the organic vapor deposition container 400. Therefore, the large surface hole V2 can accommodate the organic substance supplied from the organic vapor deposition container 400 in a wide width, and can quickly pass through the small surface hole V1 having a smaller width than the large surface hole V2 on the substrate 300. Ground to form fine patterns.

FIG. 4 is a plan view showing the vapor deposition mask 100 of the embodiment. 5, this vapor deposition mask 100 is demonstrated more concretely.

4, the vapor deposition mask 100 of the embodiment may include a vapor deposition area DA and a non-evaporation area NDA.

The vapor deposition area DA may be an area for forming a vapor deposition pattern. That is, the vapor deposition material can be vapor-deposited on the vapor deposition substrate through the vapor deposition area DA of the vapor deposition mask.

The vapor deposition mask 100 may include a plurality of vapor deposition areas DA. For example, the vapor deposition area DA of the embodiment may include a plurality of effective portions AA1, AA2, AA3 and non-effective portions UA.

The vapor deposition area DA may include a plurality of separation areas IA1 and IA2 included in one vapor deposition mask 100. The separation regions IA1 and IA2 may be separated regions between a plurality of effective parts.

The vapor deposition mask 100 may include non-evaporation areas NDA on both sides in the longitudinal direction of the vapor deposition area DA. The vapor deposition mask 100 of the embodiment may include the non-evaporation area NDA located on both sides of the vapor deposition area DA in the horizontal direction.

The non-evaporation area NDA of the vapor deposition mask 100 may be an area that does not participate in vapor deposition. The non-evaporation area NDA may include frame fixing areas FA1 and FA2 for fixing the evaporation mask 100 to the mask frame 200. In addition, the non-evaporated area NDA may include half-etched portions HF1 and HF2 and open portions.

The non-evaporation area NDA may include half-etched portions HF1 and HF2. For example, the non-evaporation area NDA of the vapor deposition mask 100 may include a first half-etched portion HF1 on one side of the vapor deposition area DA, and include the other side opposite to the side of the vapor deposition area DA The second half-etched part HF2. The first half-etched portion HF1 and the second half-etched portion HF2 can be used for vapor deposition along The depth direction of the mask 100 forms an area of a groove.

The half-etched portions HF1 and HF2 can be formed at the same time when the small surface hole V1 or the large surface hole V2 is formed.

The non-evaporation area NDA includes frame fixing areas FA1 and FA2 for fixing the vapor deposition mask 100 to the mask frame 200.

The frame fixing areas FA1 and FA2 may be formed between the half-etched portions HF1 and HF2 of the non-evaporated area NDA and the effective portions of the vaporized area DA adjacent to the half-etched portions HF1 and HF2.

The vapor deposition mask 100 may include a plurality of effective portions AA1, AA2, AA3 spaced apart in the longitudinal direction, and ineffective portions UA other than the effective portion.

The effective portions AA1, AA2, AA3 may include through holes TH, and the through holes TH include: a plurality of small surface holes V1 formed on a surface of the vapor deposition mask 100; a plurality of large surface holes V2 formed in On the other surface opposite to the surface; and a communicating portion CA connecting the boundary between the small surface hole V1 and the large surface hole V2. In addition, the effective portions AA1, AA2, AA3 may include an island portion IS supporting a plurality of through holes TH.

The island IS may be located between adjacent through holes TH among the through holes TH. That is, in the effective portions AA1, AA2, and AA3 of the vapor deposition mask 100, the area other than the through hole TH may be the island portion IS.

The non-effective portion UA may include an area other than the effective portion of the vapor deposition area DA and the non-evaporation area NDA. The non-effective portion UA may include outer edge areas OA1, OA2, OA3 surrounding the outer edges of the effective portions AA1, AA2, AA3.

Fig. 5 is a plan view showing an effective portion of the vapor deposition mask 100 of the embodiment.

5, the vapor deposition mask 100 may include a plurality of through holes TH. Wherein, the plurality of through holes TH may be circular. Specifically, the through hole TH can have a horizontal diameter Cx and a vertical diameter Cy value, and the horizontal diameter Cx and the vertical diameter Cy value of the through hole TH may correspond to each other.

A plurality of the through holes TH may be arranged in a row according to the direction. For example, a plurality of the through holes TH may be arranged in a row on the vertical axis and the horizontal axis.

Specifically, the first through hole TH1 and the second through hole TH2 may be arranged in one on the horizontal axis The third through holes TH3 and the fourth through holes TH4 may be arranged in a row on the horizontal axis.

In addition, the first through holes TH1 and the third through holes TH3 may be arranged in a row on the longitudinal axis, and the second through holes TH2 and the fourth through holes TH4 may be arranged in a row on the longitudinal axis.

That is, when a plurality of through holes TH are respectively arranged in a row on the vertical axis and the horizontal axis, the island portion IS may be located between two through holes TH adjacent in a diagonal direction, where the diagonal direction is the same as the vertical axis. The direction that all crosses the horizontal axis. That is, the island portion IS may be located between two through holes TH formed adjacent to each other in the diagonal direction.

The island portion IS may refer to a surface that has not been etched between the through holes TH on the other surface of the vapor deposition mask 100 where the large surface holes V2 of the effective portion AA are formed. Specifically, the island portion IS may be another portion of the vapor deposition mask 100 that is not etched except for the second inner surface ES2 located in the large surface hole and the through hole TH in the effective portion AA of the vapor deposition mask. surface.

The diameter of the through hole TH may be the width between the communicating portions CA. Specifically, the diameter of the through hole can be measured at the position where the end of the inner surface in the small surface hole V1 intersects with the end of the inner surface in the large surface hole V2. The measurement direction of the diameter of the through hole TH can be any one of the horizontal direction, the vertical direction, and the diagonal direction. The diameter of the through hole TH measured in the horizontal direction may be 33 μm or less. Alternatively, the diameter of the through hole TH measured in the vertical direction may be 33 μm or less. Alternatively, the diameter of the through hole TH may be the average value of the values measured in the horizontal direction, the vertical direction, and the diagonal direction.

The ribs RB1 and RB2 may be located between the plurality of through holes TH. A second rib RB2 may be formed between the first through hole TH1 and the second through hole TH2 adjacent to it in the horizontal direction. In addition, another first rib RB1 may be formed between the first through hole TH1 and the third through hole TH3 adjacent thereto in the vertical direction.

On the other hand, the vapor deposition mask 100 may include at least one recess formed on one surface 101.

For example, the vapor deposition mask 100 may include a surface 101 formed with small surface holes V1 and another surface 102 formed with large surface holes V2. Also, at least one recess may be formed on one surface 101 where the small surface hole V1 is formed and the other surface 102 where the large surface hole V2 is formed. Therefore, the thickness of the vapor deposition mask 100 in the region where the recess is formed may be smaller than the thickness of the vapor deposition mask 100 in the region where the recess is not formed. For example, with the area where the recess is not formed Compared with the thickness of the vapor deposition mask 100 in the domain, the thickness of the vapor deposition mask 100 in the region where the recess is formed can be smaller than the depth of the recess.

Specifically, the vapor deposition mask 100 penetrates the recessed portion that occurs in the metal plate raw material used to prepare the vapor deposition mask 100, so that the finally prepared vapor deposition mask 100 can include a recess corresponding to the recessed portion .

Such recesses can be attributed to the pre-treatment process performed before the through holes are formed on the metal plate. Specifically, before forming the through hole on the metal plate, a surface treatment process for applying a high etching factor is performed. For example, before forming a through hole on the surface of a metal plate, a surface treatment layer for improving etching characteristics can be formed.

The surface treatment layer can be formed by chemically treating the surface of the metal plate. That is, the metal plate can be treated by permeating acid chemicals such as nitric acid, hydrochloric acid, sulfuric acid, phosphoric acid, etc. before the through holes are formed, and thus a surface treatment layer is formed on the surface thereof. In addition, during the formation of the surface treatment layer, the surface roughness of the metal plate is changed. When the surface roughness appears to be too high, a concave portion may be formed on the surface of the metal plate.

In addition, the recessed portion is generated when the drug is concentrated in a specific area during drug processing, and may also be generated by removing impurities or the like on the surface of the metal plate.

In addition, during the formation of the through hole of the vapor deposition mask 100, due to the decrease in the adhesion force of the photoresist layer, etching occurs in the area where etching should not occur, thereby generating the recess.

In the process of forming the vapor deposition mask 100, the recess may be generated due to various factors.

At this time, in the case where there are a certain number or less of the recesses in a certain position, the vapor deposition performance of the vapor deposition mask can be improved. Therefore, in the preparation process of the vapor deposition mask 100 of the embodiment, if there are a specific number or less of recesses at a specific position, it is regarded as a qualified product, so that the reliability of the vapor deposition mask 100 can be improved. , While increasing the yield.

Specifically, in one surface 101 of the vapor deposition mask 100 of the embodiment, only the recesses formed in the effective portion AA are managed, so that the vapor deposition performance of the vapor deposition mask 100 can be improved.

That is, one surface 101 and the other surface 102 of the vapor deposition mask 100 can form recesses through the above-mentioned factors.

Specifically, before forming the through holes TH, the recesses may be formed on one surface 101 and the other surface 102 of the vapor deposition mask 100.

The recesses can be randomly formed on the vapor deposition area DA and the non-evaporation area NDA on one surface 101 and the other surface 102.

In addition, the recesses formed on one surface 101 of the vapor deposition mask 100 and the non-evaporation area NDA on the other surface do not affect the reliability of the vapor deposition mask 100. Therefore, in the non-evaporation area NDA , At least one recess can be formed on one surface 101 and the other surface 102 of the vapor deposition mask 100.

In addition, the vapor deposition area DA may include an effective portion AA and an ineffective portion UA. In addition, the invalid portion UA may include an outer edge area OA and a separation area IA.

At this time, the ineffective portion UA on one surface 101 and the other surface 102 of the vapor deposition mask 100 may be formed with recesses. At this time, the recess in the ineffective portion UA does not affect the vapor deposition performance of the vapor deposition mask 100, and therefore, it is not necessary to manage the recess in the ineffective portion UA.

In the embodiment, the concave portion on the effective portion AA can be managed. Therefore, below, only the recessed portion on the effective portion AA will be described. That is, in areas other than the effective portion, recesses may be formed on one surface 101 and the other surface 102 of the vapor deposition mask 100, but this does not affect the vapor deposition performance of the vapor deposition mask 100. However, the concave portion on the effective portion AA affects the vapor deposition performance of the vapor deposition mask 100. Therefore, in the embodiment, the concave portion on the effective portion AA is controlled to increase the yield of the vapor deposition mask and increase the vapor deposition rate. Plating performance.

At this time, the small surface hole V1 and the large surface hole V2 of the through hole TH are formed on the effective portion AA. However, the recess may not be formed on the other surface 102 of the vapor deposition mask 100 in which the large surface holes V2 are formed.

That is, on the other surface 102 of the vapor deposition mask 100, there are a plurality of large surface holes V2 and island portions IS in a region with the effective portion AA. Wherein, before forming the through hole TH, even if a recess is formed in the area corresponding to the effective portion AA on the other surface 102 of the vapor deposition mask 100, all of the large surface hole V2 can be removed when forming the large surface hole V2. The recess. In addition, a recessed portion is formed on the other surface 102 of the vapor deposition mask 100 in an area corresponding to the effective portion AA. If the recessed portion cannot be removed when the large surface hole V2 is formed, the recessed portion is located in the island portion IS on and Therefore, it is connected to the large surface hole V2. In addition, when the recess is connected to the large surface hole V2, this will increase the opening area of the large surface hole V2, and therefore increase the opening area of the large surface hole V2, which is regarded as defective and discarded. In other words, in the area corresponding to the effective portion AA on the other surface 102 of the vapor deposition mask 100 of the embodiment, there is no concave portion. For example, before the through hole TH is formed, even if there are recesses in the area corresponding to the effective portion AA on the other surface 102 of the vapor deposition mask 100, the corresponding recesses are processed as qualified products in the vapor deposition mask. 100 has been removed.

The recesses G1 and G2 may be present in the area corresponding to the effective portion AA on one surface 101 of the vapor deposition mask 100.

At this time, the recesses G1 and G2 may not be connected to the small surface holes V1 and are formed between the plurality of small surface holes V1. That is, when the concave portions G1 and G2 are connected to the small surface hole V1, the hole diameter of the small surface hole V1 is increased due to the concave portions G1 and G2. Therefore, it can be effectively used on one surface 101 of the vapor deposition mask 100 of the embodiment. The portion AA includes at least one recessed portion G1, G2 that is not connected to the small surface hole V1.

At this time, the recesses G1 and G2 may affect the vapor deposition performance of the vapor deposition mask 100 according to the opening area thereof, or may not affect the vapor deposition performance.

At this time, in the embodiment, the recesses whose opening area is less than or equal to 30% of the opening area of the small surface hole V1 may not be controlled. That is, the recessed portion having an opening area of 30% or less of the opening area of the small surface hole V1 does not affect the vapor deposition performance of the vapor deposition mask 100, and therefore, the recessed portion may not be controlled.

The recesses G1 and G2 whose opening area is greater than 30% of the opening area of the small surface hole V1 will affect the vapor deposition performance of the vapor deposition mask 100. Therefore, in the embodiment, the opening area is greater than 30% of the opening area of the small surface hole V1 The number of recesses G1 and G2 is controlled to be less than or equal to a predetermined number.

However, when a concave portion with an opening area less than or equal to 30% of the opening area of the small surface hole V1 is connected to the small surface hole V1, the hole diameter of the small surface hole V1 is increased. The surface hole V1 connection is preferable.

Hereinafter, the control of the recesses G1 and G2 having an opening area larger than 30% of the opening area of the small surface hole V1 will be described.

On the other hand, the vapor deposition mask 100 includes a plurality of effective portions AA. For example, the number of effective parts AA may be three or more.

In addition, on one surface 101 of the vapor deposition mask 100 of the embodiment, the total number of recesses G1 and G2 formed in regions corresponding to the plurality of effective portions AA is controlled to 5 or less.

At this time, when the total number of recesses G1 and G2 formed on the area corresponding to the plurality of effective portions AA on one surface 101 of the vapor deposition mask 100 is greater than 5, the organic matter may be deposited during the vapor deposition process. The recesses G1 and G2 reduce the adhesion force between the vapor deposition mask 100 and the substrate, thereby reducing the vapor deposition performance. Therefore, in the embodiment, the total number of recesses G1 and G2 formed on one surface 101 of the vapor deposition mask 100 corresponding to the plurality of effective portions AA is controlled to 5 or less.

That is, when the number of recesses G1 and G2 is 5 or less, the organic substance can be vapor deposited without reducing the adhesion force between the substrate and the vapor deposition mask 100. In addition, when the number of recesses G1, G2 is 5 or less, the stress of the vapor deposition mask 100 can be dispersed through the recesses G1, G2, thereby solving the problem of bending of the vapor deposition mask 100, thereby further improving vapor deposition. Plating performance.

On the other hand, when the recesses G1 and G2 are concentrated in any one of the multiple effective portions, the vapor deposition performance in the corresponding effective portion can be reduced.

Therefore, the total number of recesses G1 and G2 formed in the area corresponding to one effective portion AA on one surface 101 of the vapor deposition mask 100 in the embodiment is controlled to 3 or less. In addition, when three or less recesses G1 and G2 are formed on one effective portion AA, the vapor deposition performance of the vapor deposition mask 100 can be improved without reducing the vapor deposition performance in the relevant effective portion AA. .

On the other hand, in the surface treatment process, the concave portion in the embodiment was generated in the process of adjusting the surface roughness Ra of the vapor deposition mask 100 to 100 to 200 nm (0.1 to 0.2 μm). Therefore, the surface roughness Ra of the vapor deposition mask 100 in the embodiment may be 100 to 200 nm (0.1 to 0.2 μm). In addition, when the surface roughness Ra of the vapor deposition mask 100 is 100 to 200 nm (0.1 to 0.2 μm), the recesses G1 and G2 may occur. Therefore, in the embodiment, the small surface holes are formed. Controlling the total number of recesses G1 and G2 in the effective area AA of one surface 101 of V1 can improve the vapor deposition performance by dispersing stress and prevent the adhesion to the substrate from decreasing during organic vapor deposition.

Fig. 6 is a cross-sectional view showing the B-B' direction or C-C' direction of the embodiment of Fig. 5 Fig. 7 is a diagram showing various forms of recesses formed on one surface of the vapor deposition mask.

In other words, the first through holes TH1-1 and the second through holes TH1-2 may be arranged in the horizontal axis direction on the vapor deposition mask 100, or may be arranged in the vertical axis direction. That is, the second through hole TH1-2 may be formed between the plurality of first through holes TH1-1. FIG. 6 can show the first through holes TH1-1 and the second through holes TH1-2 arranged along the longitudinal axis, or it can show the first through holes TH1-1 and the second through holes TH1-1 arranged along the horizontal axis.孔TH1-2.

6 and 7, the vapor deposition mask 100 may include a first through hole TH1-1 formed with the first small surface hole V1-1 and the first large surface hole V2- 1. It is formed by making the first small surface hole V1-1 and the first large surface hole V2-1 communicate with each other.

In addition, the vapor deposition mask 100 may be adjacent to the first through hole TH1-1 or may be formed with the second small surface hole V1-2 and the second large surface hole V2-2 at a predetermined interval, so that the The second small surface hole V1-2 and the second large surface hole V2-2 communicate with each other to form the second through hole TH1-2.

At this time, the vapor deposition mask 100 can have a specific thickness. The thickness of the vapor deposition mask 100 may be the first thickness T1 in the area where the first through holes TH1-1 are formed, or may be the second thickness T2 in the area where the second through holes TH1-2 are formed. . However, the first thickness T1 may be 95% to 105% of the second thickness T2, but is not limited thereto.

At this time, the first thickness T1 may be defined as the thickness of the second one RB2-1 of the vapor deposition mask 100 located in the region adjacent to the first through hole TH1-1, and the second thickness T2 may It is defined as the thickness of the second second RB2-2 of the vapor deposition mask 100 in the region adjacent to the second through hole TH1-2.

The first thickness T1 may be the same as the second thickness T2, and may have different thicknesses within an error range due to various factors in the preparation process of the vapor deposition mask 100.

The first thickness T1 and the second thickness T2 may be about 15 μm or less. For example, the first thickness T1 and the second thickness T2 may be about 7 μm to about 10 μm. For example, the first thickness T1 and the second thickness T2 may be about 6 μm to about 9 μm.

When the first thickness T1 and the second thickness T2 are greater than about 15 μm, it may be difficult to form a high-definition OLED evaporation pattern above 500 PPI. In addition, when the first thickness T1 and the second thickness T2 are less than about 6 μm, it may be difficult to uniformly form the vapor deposition pattern.

Therefore, the first thickness T1 and the second thickness T2 may be the same or different, and while satisfying the range, they have different sizes from each other.

More specifically, the first thickness T1 and the second thickness T2 may have a difference in a prescribed size range while satisfying the range. For example, the first thickness T1 is greater than the second thickness T2, and at this time, the second thickness T2 may be more than 97% of the first thickness T1, that is, more than 0.97 times.

That is, the first thickness T1 and the second thickness T2 can satisfy the following mathematical expression 1.

Mathematical formula 1:

第二厚度<第一厚度。 The first thickness × 0.97

The second thickness <the first thickness.

If the second thickness T2 is less than 0.97 times the first thickness T1, the difference between the first thickness T1 and the second thickness T2 will cause a through hole to be formed on the metal plate that is the material of the vapor deposition mask , Can increase the deviation of the inclination angle of multiple through holes.

On the other hand, as shown in the figure, the first through holes TH1-1 and the second through holes TH1-2 include small surface holes and large surface holes, respectively. And, the first through hole TH1-1 and the second through hole TH1-2 may have substantially the same inclination angle with each other. Specifically, the inclination angles of the first through hole TH1-1 and the second through hole TH1-2 may also be different from each other, and the deviation thereof may be within an error range.

That is, the angle of the inner surface of the first large surface hole V2-1 of the first through hole TH1-1 can be defined as the angle connecting the other surface and the second inner surface ES2 of the first large surface hole V2-1 The first end E1 and the first inclination angle θ1 of the extension line of the one end E2 of the communicating portion between the first small surface hole V1-1 and the first large surface hole V2-1.

In addition, the angle of the inner surface of the second large surface hole V2-2 of the second through hole TH1-2 can be defined as the angle connecting the other surface and the second inner surface ES2 of the second large surface hole V2-2 The second inclination angle θ2 of one end E1 and the extension of one end E2 of the communicating portion between the second small surface hole V1-2 and the second large surface hole V2-2.

At this time, the first inclination angle θ1 of the first through hole TH1-1 may be substantially the same as the second inclination angle θ2 of the second large surface hole V2-2 of the second through hole TH1-2.

At this time, the first inclination angle θ1 of the first large surface hole V2-1 of the first through hole TH1-1 and the second inclination angle θ1 of the second large surface hole V2-2 of the second through hole TH1-2 θ2 can be 30° to 55°.

Therefore, it is possible to form a high-definition vapor deposition pattern of 400 PPI or higher, specifically 500 PPI or higher, while the island portion IS may be present on the other surface of the vapor deposition mask 100.

In addition, the width W4 of the communicating portion of the first through hole TH1-1 in the embodiment may be substantially the same as the width of the communicating portion of the second through hole TH1-2.

In addition, the height H of the first small surface hole V1-1 of the first through hole TH1-1 in the embodiment may be the same as the height of the second small surface hole V1-2 of the second through hole TH1-2.

In other words, although the first through hole TH1-1 and the second through hole TH1-2 are holes prepared in different ways from each other, they respectively have the inclination angle of the large surface hole, the height of the small surface hole, and the communicating portion. The width of can be substantially the same or have a deviation within the error range.

That is, the height H of each small surface hole of the first through hole TH1-1 and the second through hole TH1-2 may be about 4.0 μm or less. The height H of the small surface holes in the second rib RB2 of the vapor deposition mask 100 may be about 3.5 μm or less.

Preferably, the height H of each small surface hole of the first through hole TH1-1 and the second through hole TH1-2 may be about 3.5 μm or less. The height H of each small surface hole of the first through hole TH1-1 and the second through hole TH1-2 may be about 2.5 μm or less.

Preferably, the height H of the plurality of small surface holes of the first through hole TH1-1 and the second through hole TH1-2 may be about 0.1 μm to about 3.4 μm. For example, the height H of the small surface holes of the first through hole TH1-1 and the second through hole TH1-2 may be about 0.5 μm to about 3.2 μm. For example, the height H of the small surface holes of the first through hole TH1-1 and the second through hole TH1-2 may be about 1 μm to about 3 μm.

Wherein, the height may be measured in the thickness measurement direction of the vapor deposition mask 100, that is, in the depth direction, and may be the height measured from one surface of the vapor deposition mask 100 to the communicating portion. Specifically, the horizontal direction (x direction, length direction, stretching direction) and vertical direction (y direction, width direction, stretching vertical direction) in the top view of FIG. Measured on.

When the height H of the plurality of small surface holes of the first through hole TH1-1 and the second through hole TH1-2 is greater than about 3.5 μm, when the OLED vapor deposition is performed, the vapor deposition substance diffuses more than the through hole The shadow effect of the area with larger area causes vapor deposition defects.

In addition, the pore diameter W3 of the surface of the vapor deposition mask 100 where the small surface holes are formed and the pore diameter W4 of the communication portion that is the boundary between the small surface holes and the large surface holes may be similar to or different from each other. At this time, the aperture of the small surface hole of the first through hole TH1-1 and the aperture of the small surface hole of the second through hole TH1-2 correspond to each other, and the aperture of the communicating portion of the first through hole TH1-1 is the same as that of the second through hole TH1-1. The apertures of the communicating portions of the through holes TH1--2 correspond to each other.

The hole diameter W3 of the surface of the vapor deposition mask 100 where the small surface holes are formed may be larger than the hole diameter W4 in the communicating portion. For example, the difference between the hole diameter W3 of one surface of the vapor deposition mask 100 and the hole diameter W4 of the communicating portion may be about 0.01 μm to about 1.1 μm.

For example, the difference between the hole diameter W3 on one surface of the vapor deposition mask and the hole diameter W4 in the communicating portion may be about 0.03 μm to about 1.1 μm. For example, the difference between the hole diameter W3 on one surface of the vapor deposition mask and the hole diameter W4 in the communicating portion may be about 0.05 μm to about 1.1 μm.

When the difference between the aperture W3 on one surface of the vapor deposition mask 100 and the aperture W4 of the communicating portion is greater than about 1.1 μm, vapor deposition defects may occur due to the shadow effect.

On the other hand, in the vapor deposition mask 100 of the embodiment, the thickness of the effective portion AA where the through hole is formed by etching and the thickness of the non-effective portion UA that are not etched may be different from each other.

Specifically, the thickness of the ineffective portion UA of the vapor deposition mask 100 of the embodiment may be greater than the thickness of the effective portions AA1, AA2, and AA3. For example, the maximum thickness of the non-effective portion UA or the non-evaporation area NDA of the vapor deposition mask 100 may be about 30 μm or less. For example, the maximum thickness of the non-effective portion UA or the non-evaporation area NDA of the vapor deposition mask 100 may be about 25 μm or less. For example, the maximum thickness of the ineffective portion or non-evaporated area of the vapor deposition mask of the embodiment may be about 15 μm to about 25 μm.

When the maximum thickness of the ineffective portion or non-evaporated area of the vapor deposition mask of the embodiment is greater than about 30 μm , the thickness of the metal plate 10 as the raw material of the vapor deposition mask 100 becomes thicker, and therefore it may be difficult to form Fine-sized through holes TH. In addition, when the maximum thickness of the non-effective portion UA or the non-evaporation area NDA of the vapor deposition mask 100 is less than about 15 μm , the thickness of the metal plate is thin, and it is difficult to form through holes of uniform size.

On the other hand, in the effective portion AA of one surface 101 of the vapor deposition mask 100 of the embodiment, at least one recessed portion G1, G2 is formed. For example, in the first small surface hole V1-1 The adjacent area may be formed with a first recess G1. In addition, a second recess G2 may be formed in the adjacent area of the second small surface hole V1-2.

At this time, the first recess G1 can be formed at a predetermined interval from a position vertically overlapping the first rib RB2-1. Therefore, the first recess G1 may not affect the first thickness T1. However, when the first recess G1 is formed at a position that vertically overlaps the first rib RB2-1, the first thickness T1 may be reduced at that position corresponding to the thickness of the first recess G1.

In addition, the second recess G2 can be formed at a predetermined interval from a position vertically overlapping the second rib RB2-2. Therefore, the second recess G2 may not affect the second thickness T2. However, when the second recess G2 is formed at a position that vertically overlaps the second rib RB2-2, the second thickness T2 may be reduced at that position corresponding to the thickness of the second recess G2.

At this time, the third recessed portion ( Not shown). However, the third recess does not affect the vapor deposition performance of the vapor deposition mask 100. However, when the number of the third recesses increases, the overall strength of the vapor deposition mask may be weakened. Therefore, in the embodiment, it is also possible to control the number of third recesses formed on the surface of the non-evaporated area and the non-effective portion other than the effective portion AA and the other surface. For example, the opening area of the third recess may be larger than the opening area of the small surface hole, and the number thereof may be 15 or less.

In addition, in the recesses formed in the effective portion AA, the recesses whose opening area is less than or equal to 30% of the opening area of the small surface holes do not affect the vapor deposition performance of the vapor deposition mask 100, and therefore, for those with an opening area larger than that of the small surface holes The recessed portion of 30% of the opening area is controlled.

At this time, it is not necessary to form a recessed part in the effective part AA of the other surface 102 of the mask 100 for vapor deposition. That is, the recess formed on the effective part of the other surface 102 of the vapor deposition mask 100 may be removed during the process of forming the large surface hole, or may be discarded because it is connected to the large surface hole as a defect.

Referring to FIG. 7, the recesses formed on one surface 101 of the vapor deposition mask can have various forms. For example, as shown in (a) of FIG. 7, the recess Ga may not be connected to the small surface hole and its opening area is less than or equal to 30% of the opening area of the small surface hole. These recesses Ga do not affect the vapor deposition performance of the vapor deposition mask, so the number is not limited.

In addition, referring to FIG. 7(b), the concave portion Gb may not be connected to the small surface hole and The opening area is greater than 30% of the opening area of the small surface hole. When the number of such recesses Gb is less than or equal to a fixed number, the vapor deposition performance can be improved by dispersing stress, and when the number is greater than the predetermined number, the vapor deposition performance can be reduced. Therefore, in the embodiment, the number of the recesses is limited, so that the vapor deposition performance of the vapor deposition mask 100 can be improved.

In addition, referring to FIG. 7(c), the recess Gc can be connected to the small surface hole. In addition, the concave portion Gc connected to the small surface hole in this way increases the diameter of the small surface hole. In addition, the vapor deposition mask including the recess Gc connected to the small surface hole may be regarded as defective.

That is, in the embodiment, when the opening area of the recessed portion is greater than 30% of the opening area of the small surface hole, the vapor deposition performance can be improved by dispersing stress. Therefore, the vapor deposition mask can be increased by controlling the number of recesses Gb The vapor deposition performance of 100 can improve the yield at the same time.

For example, recesses G1 and G2 may be formed in the effective portion AA of one surface 101 of the vapor deposition mask 100.

At this time, on one surface 101 of the vapor deposition mask 100 of the embodiment, the total number of recesses G1 and G2 formed in the regions corresponding to the plurality of effective portions AA is controlled to 5 or less.

At this time, on one surface 101 of the vapor deposition mask 100, when the total number of recesses G1, G2 formed in the regions corresponding to the plurality of effective portions AA is greater than 5, it may be possible during the vapor deposition process of organic substances. Due to the recesses G1 and G2, the adhesion force between the vapor deposition mask 100 and the substrate is reduced, thereby reducing the vapor deposition performance. Therefore, in the embodiment, the total number of recesses G1 and G2 formed on one surface 101 of the vapor deposition mask 100 corresponding to the plurality of effective portions AA is controlled to 5 or less.

That is, when the number of the recesses G1 and G2 is 5 or less, the organic substance vapor deposition is realized without reducing the adhesion force between the substrate and the vapor deposition mask 100. In addition, when the number of recesses G1, G2 is 5 or less, the stress of the vapor deposition mask 100 can be dispersed through the recesses G1, G2, thereby solving the problem of bending of the vapor deposition mask 100, thereby further improving vapor deposition. Plating performance.

On the other hand, when the recesses G1 and G2 are concentrated in any one of the multiple effective portions, the vapor deposition performance in the corresponding effective portion can be reduced.

Therefore, the total number of recesses G1 and G2 formed on the area corresponding to one effective portion AA on one surface 101 of the vapor deposition mask 100 of the embodiment is controlled to 3 or more Down. In addition, when three or less recesses G1 and G2 are formed in one effective portion AA, the vapor deposition performance of the vapor deposition mask 100 can be improved without reducing the vapor deposition performance in the relevant effective portion AA.

On the other hand, in the surface treatment process, the concave portion in the embodiment was generated in the process of adjusting the surface roughness Ra of the vapor deposition mask 100 to 100 to 200 nm (0.1 to 0.2 μm). Therefore, the surface roughness Ra of the vapor deposition mask 100 in the embodiment may be 100 to 200 nm (0.1 to 0.2 μm). In addition, when the surface roughness Ra of the vapor deposition mask 100 is 100 to 200 nm (0.1 to 0.2 μm), the recesses G1 and G2 can be generated. Therefore, in the embodiment, for the small surface holes V1 formed The total number of recesses G1 and G2 on the effective portion AA area of one surface 101 can be controlled to improve the vapor deposition performance by dispersing stress and prevent the adhesion force between the substrate and the substrate from being reduced during the organic vapor deposition process.

On the other hand, in the effective portion, the recessed portion is formed on one surface of the vapor deposition mask in which small surface holes are formed. In addition, in the effective portion, the concave portion is not formed on the other surface of the vapor deposition mask. That is, the other surface of the vapor deposition mask only includes a plurality of large-surface holes and a plurality of islands located between them. In addition, since the recessed portion is not formed in the plurality of island portions, the height between the plurality of island portions may be substantially the same as each other. Specifically, since the recess is not formed in the plurality of islands, the actual height difference between the plurality of islands is within ±1μ.

The features, structures, effects, etc. described in the above embodiments are included in at least one embodiment of the present invention, but are not necessarily limited to one embodiment. In addition, the features, structures, effects, etc. exemplified in each embodiment can also be implemented by combining or modifying other embodiments by those skilled in the art. Therefore, the content related to these combinations and modifications should be construed as being included in the scope of the present invention.

In addition, although the above description is centered on the embodiment, this is only an example, and the present invention is not limited to this. Those skilled in the art should understand that the above non-exemplified can be performed without departing from the essential characteristics of the embodiment. Various deformations and applications. For example, each constituent element specifically shown in a plurality of embodiments may be modified and implemented. Moreover, the distinguishing technical features related to such modifications and changes should be interpreted as being included in the scope of the present invention specified in the appended claims.

E1: End

E2: End

ES2: second inside surface

G1: The first recess

G2: second recess

H: height

RB2-1: The second rib

RB2-2: The second second rib

T1: first thickness

T2: second thickness

TH1-1: The first through hole

TH1-2: second through hole

V1-1: The first small surface hole

V1-2: The second small surface hole

V2-1: The first large surface hole

V2-2: The second largest surface hole

W3: Aperture

W4: width/aperture

θ 1: the first tilt angle

θ 2: second tilt angle

Claims (12)

A mask for vapor deposition of metal materials used for vapor deposition of OLED pixels, comprising: One evaporation area and one non-evaporation area, The vapor deposition area includes a plurality of effective portions and ineffective portions that are separated from each other along the length direction of the vapor deposition mask, The effective part includes: A plurality of through holes, including a plurality of small surface holes formed on one surface, a plurality of large surface holes formed on the other surface opposite to the surface and communicating with the small surface holes, connecting the small surface holes and the The connecting part of the boundary of the large surface hole; and The first recess is formed between the plurality of small surface holes on the surface, and the opening area is greater than 30% of the opening area of the small surface holes, Five or less of the first recesses are formed in a plurality of the effective portions. The vapor deposition mask according to claim 1, wherein the number of the first recesses in each of the effective portions is 3 or less. The vapor deposition mask according to claim 1, wherein the first recess is not connected to the small surface hole. The vapor deposition mask according to any one of claims 1 to 3, wherein the effective portion includes a plurality of island portions, and the plurality of island portions are located between the plurality of large-surface holes on the other surface, The height difference between the plurality of islands is within ±1 μm. The vapor deposition mask according to claim 3, wherein the surface roughness Ra value of the surface is in the range of 0.1 to 0.2 μm. The vapor deposition mask according to any one of claims 1 to 3, wherein the effective portion further includes a second concave portion, the second concave portion is not connected with the small surface hole and the opening area is less than or equal to the small surface hole 30% of the opening area. The vapor deposition mask according to claim 1, wherein a third recess is formed on the surface and the other surface of the non-effective portion and the non-evaporation area, and the opening area is larger than 30 of the opening area of the small surface hole % And the quantity is 15 or less. The vapor deposition mask according to any one of claims 1 to 3, wherein the surface roughness Ra of at least one of the surface and the other surface satisfies the range of 100 nm to 200 nm. The vapor deposition mask according to any one of claims 1 to 3, wherein the effective part includes: A first rib adjacent to a first through hole of the plurality of through holes; and A second rib adjacent to a second through hole, A first thickness (T1) of the first rib and a second thickness (T2) of the second rib satisfy the following mathematical formula 1.

The vapor deposition mask according to any one of claims 1 to 3, wherein one end of an inner surface of the large surface hole is connected to one end of the communicating portion located between the small surface hole and the large surface hole The inclination angle of an extension line of φ with respect to the other surface is 30° to 55°. The vapor deposition mask according to claim 10, wherein the height of the small surface holes is 0.1 μm to 3.4 μm. The vapor deposition mask according to claim 11, wherein the difference between a hole diameter (W3) of the small surface hole on the surface and a hole diameter (W4) of the communicating portion is 0.03 μm to 1.1 μm.

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