TW202127512A - Substrate bonding device and method - Google Patents

Substrate bonding device and method Download PDF

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TW202127512A
TW202127512A TW109138149A TW109138149A TW202127512A TW 202127512 A TW202127512 A TW 202127512A TW 109138149 A TW109138149 A TW 109138149A TW 109138149 A TW109138149 A TW 109138149A TW 202127512 A TW202127512 A TW 202127512A
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substrate
electrodes
bonding
substrates
pair
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TW109138149A
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Chinese (zh)
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牛島幹雄
大森薫
三石創
塩見隆
角田真生
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日商尼康股份有限公司
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    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/68Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for positioning, orientation or alignment
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping

Abstract

This substrate bonding device comprises: a pair of electrodes 351a disposed with at least one of substrates 211, 213 interposed therebetween; and a detection unit 353a that detects an electrostatic characteristic between the two electrodes included in the pair of electrodes. When a contact region is formed by bringing parts of the respective substrates between the substrates and the contact region expands in the planar direction, the detection unit can detect the state of the contact region, that is, a bonding process of the substrates, by detecting the electrostatic characteristic between the two electrodes included in the pair of electrodes 351a that are disposed with at least one of the substrates 211, 213 interposed therebetween.

Description

基板貼合裝置及方法Substrate bonding device and method

本發明係關於一種基板貼合裝置及方法。The present invention relates to a substrate bonding device and method.

半導體裝置等之電子器件的製造中,係採用將2個基板之表面活化,使經活化之各別的表面的一部分接觸而形成接觸區域,並以使該接觸區域在沿著貼合面之方向擴大的方式貼合2個基板的技術。此時,貼合之進行會依基板的狀態等而有所變化,因此會需要檢測貼合之進行狀態的技術。因此,專利文獻1中揭示使用在平視下從接觸區域之位置排列所設置的複數個受光部,經由貼合之2個基板的一方接收來自另一方之反射光而檢測貼合之進行狀態的裝置。但是,需要將複數個受光部配置於保持基板之固持器或是保持固持器之載台中,因而不合適。 [專利文獻1]日本特開2012-191037號公報In the manufacture of electronic devices such as semiconductor devices, the surface of two substrates is activated, and a part of the activated surfaces is contacted to form a contact area, and the contact area is aligned along the direction of the bonding surface. The technology of laminating two substrates in an enlarged way. At this time, the progress of the bonding will vary depending on the state of the substrate, etc., so a technology for detecting the progress of the bonding will be required. Therefore, Patent Document 1 discloses the use of a plurality of light-receiving parts arranged in a line from the position of the contact area under a head-up view to receive reflected light from the other through one of the two substrates to be bonded to detect the progress state of the bonding Device. However, it is necessary to arrange a plurality of light-receiving parts in the holder holding the substrate or the holder holding the holder, which is not suitable. [Patent Document 1] JP 2012-191037 A

本發明第一樣態提供一種基板貼合裝置,係貼合第一基板及第二基板的基板貼合裝置,具備:一對電極,其係夾著第一基板及第二基板之至少一方而配置;及檢測部,其係檢測一對電極間之靜電特性。The first aspect of the present invention provides a substrate bonding device which is a substrate bonding device for bonding a first substrate and a second substrate, and includes a pair of electrodes that sandwich at least one of the first substrate and the second substrate. Configuration; and the detection part, which detects the electrostatic characteristics between a pair of electrodes.

本發明第二樣態提供一種基板貼合方法,係貼合第一基板及第二基板的基板貼合方法,包含:在第一基板及第二基板之間形成各別的一部分彼此接觸之接觸區域的階段;使接觸區域擴大的階段;及檢測夾著第一基板及第二基板之至少一方而配置的一對電極間之靜電特性的階段。The second aspect of the present invention provides a substrate bonding method, which is a substrate bonding method for bonding a first substrate and a second substrate, including: forming a contact between the first substrate and the second substrate in contact with each other. The stage of the area; the stage of expanding the contact area; and the stage of detecting the electrostatic characteristics between a pair of electrodes arranged sandwiching at least one of the first substrate and the second substrate.

另外,上述發明之內容並非已列舉本發明之全部特徵。此外,此等特徵群之子組合亦可成為發明。In addition, the content of the above invention does not enumerate all the features of the present invention. In addition, sub-combinations of these feature groups can also become inventions.

以下,通過發明之實施形態來說明本發明,不過,以下之實施形態並非限定申請專利範圍的發明者。此外,並不限於實施形態中所說明之特徵的全部組合乃解決發明之手段中所必須。Hereinafter, the present invention will be explained through embodiments of the invention. However, the following embodiments are not intended to limit the scope of the patent application of the inventor. In addition, it is not limited to that all combinations of the features described in the embodiments are necessary for the means of solving the invention.

圖1概略顯示基板貼合系統100之構成。基板貼合系統100係用於貼合2個基板而形成積層器件之裝置群,具備:框體110、搬送裝置140、控制裝置150、貼合裝置300、固持器暫存箱400及預對位器500。另外,將貼合之基板210收容於基板匣盒120,已貼合之基板(亦稱為貼合基板)230收容於基板匣盒130。FIG. 1 schematically shows the structure of the substrate bonding system 100. The substrate bonding system 100 is an apparatus group for bonding two substrates to form a multilayer device, and includes: a frame 110, a conveying device 140, a control device 150, a bonding device 300, a holder temporary storage box 400, and pre-alignment器500. In addition, the bonded substrate 210 is accommodated in the substrate cassette 120, and the bonded substrate (also referred to as a bonded substrate) 230 is accommodated in the substrate cassette 130.

框體110將搬送裝置140、貼合裝置300、固持器暫存箱400、及預對位器500收容於內部。框體110之內部進行溫度管理,例如保持於室溫。可將基板匣盒120,130各別從框體110之外側個別地可裝卸地固定。藉由基板匣盒120而可將複數個基板210一起搬入基板貼合系統100,並藉由基板匣盒130將貼合後之複數個貼合基板230一起從基板貼合系統100搬出。The frame 110 accommodates the conveying device 140, the laminating device 300, the holder temporary storage box 400, and the pre-aligner 500 inside. The inside of the frame 110 is subjected to temperature management, for example, kept at room temperature. The substrate cassettes 120 and 130 can be individually detachably fixed from the outer side of the frame 110. A plurality of substrates 210 can be carried into the substrate bonding system 100 together by the substrate cassette 120, and the plurality of bonded substrates 230 after being bonded can be carried out from the substrate bonding system 100 by the substrate cassette 130 together.

搬送裝置140係藉由可伸縮轉動之手臂保持基板210,230,並在基板匣盒120,130及框體110中的各裝置之間搬送基板210,230的裝置。搬送裝置140搬送單獨之基板210、固持器220、保持有基板210之固持器220、貼合基板210而積層之基板230等。The conveying device 140 is a device that holds the substrates 210 and 230 by telescopic arms, and conveys the substrates 210 and 230 between the substrate cassettes 120 and 130 and the respective devices in the frame 110. The conveying device 140 conveys the individual substrate 210, the holder 220, the holder 220 holding the substrate 210, the substrate 230 laminated with the substrate 210 and the like.

控制裝置150係使基板貼合系統100之各裝置相互聯繫而總體控制的裝置。控制裝置150收受來自外部之使用者的指示,設定製造貼合基板230時之製造條件。再者,控制裝置150具有朝向外部顯示基板貼合系統100之動作狀態的使用者介面。The control device 150 is a device that connects the various devices of the substrate bonding system 100 to each other to control the overall control. The control device 150 receives instructions from an external user and sets the manufacturing conditions when manufacturing the bonded substrate 230. Furthermore, the control device 150 has a user interface that displays the operating state of the substrate bonding system 100 toward the outside.

貼合裝置300係在2個基板210之間形成各別的一部分彼此接觸的接觸區域,以使該接觸區域在沿著貼合面之方向(亦稱為面方向)擴大的方式直接貼合2個基板而形成貼合基板230之裝置。另外,會有將基板211、213之接觸區域擴大而其邊界在面方向前進者表現為接合波進行。此處,所謂貼合,包含分別設置在2個基板210之各端子彼此在基板210間呈電性連接的狀態;及形成於2個基板210表面之各絕緣膜彼此接合而基板210間呈不電性連接的狀態,任何一種狀態中皆包含2個基板210可分離及不可分離之狀態兩者。為了使2個基板210之接合強度提高,宜在貼合2個基板210後,將基板210搬入如退火爐之加熱裝置進行加熱。就貼合裝置300之構成及動作後述之。The bonding apparatus 300 forms a part of the contact area between the two substrates 210 in contact with each other, so that the contact area expands in the direction along the bonding surface (also referred to as the surface direction) to directly bond 2 Two substrates form a device for bonding the substrate 230. In addition, there may be cases where the contact area of the substrates 211 and 213 is enlarged and the boundary advances in the surface direction, which appears as the progress of the bonding wave. Here, the term “bonding” includes the state in which the terminals respectively provided on the two substrates 210 are electrically connected between the substrates 210; and the insulating films formed on the surfaces of the two substrates 210 are joined to each other and the substrates 210 are not connected to each other. The state of electrical connection includes both the separable and inseparable states of the two substrates 210 in any state. In order to improve the bonding strength of the two substrates 210, it is preferable to carry the substrate 210 into a heating device such as an annealing furnace for heating after bonding the two substrates 210. The structure and operation of the bonding device 300 will be described later.

固持器暫存箱400收容複數個固持器220。固持器220藉由氧化鋁陶瓷等硬質材料而形成,具有:吸附基板210之保持部;及配置於保持部外側之緣部。在基板貼合系統100之內部,固持器220藉由保持部吸附保持基板210,並與基板210一體地處理。藉此,當保持部之吸附面平坦時,可於已翹曲或撓曲之基板210上確保平坦性。基板210貼合後,從基板貼合系統100搬出貼合基板230時,固持器220從貼合基板230分離,而再度收容於固持器暫存箱400。藉此,可反覆使用少數之固持器220。The holder temporary storage box 400 contains a plurality of holders 220. The holder 220 is formed of a hard material such as alumina ceramics, and has: a holding part for adsorbing the substrate 210; and an edge part arranged on the outside of the holding part. Inside the substrate bonding system 100, the holder 220 sucks and holds the substrate 210 by the holding portion, and is processed integrally with the substrate 210. Thereby, when the suction surface of the holding portion is flat, flatness can be ensured on the substrate 210 that has been warped or deflected. After the substrate 210 is bonded, when the bonded substrate 230 is unloaded from the substrate bonding system 100, the holder 220 is separated from the bonded substrate 230, and is stored in the holder temporary storage box 400 again. In this way, a small number of holders 220 can be used repeatedly.

預對位器500與搬送裝置140合作,使固持器220保持搬入基板貼合系統100之基板210。此外,預對位器500亦可使用於從固持器220將從貼合裝置300搬出之貼合基板230分離的情況。The pre-aligner 500 cooperates with the conveying device 140 to hold the holder 220 to carry the substrate 210 of the substrate bonding system 100. In addition, the pre-aligner 500 can also be used when separating the bonding substrate 230 carried out from the bonding device 300 from the holder 220.

基板貼合系統100除了形成有元件、電路、端子等的基板210之外,亦可貼合未加工之矽晶圓、化合物半導體晶圓、玻璃基板等。此外,亦可貼合形成有電路之電路基板與未加工的基板,也可貼合電路基板彼此、未加工基板彼此等同種之基板。再者,被接合之基板210亦可為其本身已經積層複數個基板而形成之貼合基板230。In addition to the substrate 210 on which elements, circuits, terminals, etc. are formed, the substrate bonding system 100 may also bond unprocessed silicon wafers, compound semiconductor wafers, glass substrates, and the like. In addition, it is also possible to bond a circuit board on which a circuit is formed and an unprocessed board, or bond the same types of circuit boards to each other and unprocessed boards. Furthermore, the substrate 210 to be bonded may also be a bonded substrate 230 formed by laminating a plurality of substrates.

圖2顯示藉由基板貼合系統100貼合之基板210的表面構造。基板210具有:凹槽214、複數個電路區域216、及複數個對位標記218。FIG. 2 shows the surface structure of the substrate 210 bonded by the substrate bonding system 100. The substrate 210 has a groove 214, a plurality of circuit regions 216, and a plurality of alignment marks 218.

凹槽214形成於整體概略呈圓形之基板210的周緣而成為顯示基板210中之結晶方位的指標。此外,處理基板210時,藉由檢測凹槽214之位置,亦可知道基板210中電路區域216的排列方向等。再者,於1片基板210形成有包含彼此不同之電路區域216時,可將凹槽214設為基準而區別電路區域216。The groove 214 is formed on the periphery of the substrate 210 which is generally circular as a whole and serves as an indicator for displaying the crystal orientation of the substrate 210. In addition, when processing the substrate 210, by detecting the position of the groove 214, the arrangement direction of the circuit area 216 in the substrate 210 can also be known. Furthermore, when one substrate 210 is formed with circuit regions 216 that are different from each other, the groove 214 can be used as a reference to distinguish the circuit regions 216.

電路區域216在基板210表面於基板210之面方向週期性配置。在各個電路區域216中設置藉由光微影技術等所形成之半導體裝置、配線、保護膜等。電路區域216中亦配置將基板210電性連接於其他基板210、引導框架等時成為連接端子的焊墊、凸塊等。The circuit area 216 is periodically arranged on the surface of the substrate 210 in the direction of the substrate 210. In each circuit region 216, a semiconductor device, wiring, protective film, etc. formed by photolithography technology or the like are provided. The circuit area 216 is also provided with pads, bumps, etc., which become connection terminals when the substrate 210 is electrically connected to other substrates 210, a lead frame, and the like.

對位標記218例如重疊配置於電路區域216相互之間所配置的劃線212上,並在將基板210與其他基板210,即積層對象對準時利用來作為指標。The alignment mark 218 is arranged, for example, overlapping the scribe line 212 arranged between the circuit regions 216, and is used as an index when aligning the substrate 210 with another substrate 210, that is, a laminate target.

圖3概略顯示貼合裝置300之構造。基板211、213分別保持於固持器221,223而搬入貼合裝置300中。貼合裝置300具備:框體310、上載台322、下載台332、干涉儀341、顯微鏡324,334、活化裝置326,336、及貼合檢測裝置350。FIG. 3 schematically shows the structure of the bonding device 300. The substrates 211 and 213 are respectively held by the holders 221 and 223 and carried into the bonding apparatus 300. The bonding apparatus 300 includes a housing 310, a loading table 322, a downloading table 332, an interferometer 341, microscopes 324 and 334, activation devices 326 and 336, and a bonding detection device 350.

框體310係支撐貼合裝置300之構成各部的構件,具有在水平之地面(無圖示)上經由防震裝置(無圖示)而設置的底板312、豎立設於底板312上之複數個支柱314、藉由複數個支柱314支撐的頂板316。The frame 310 is a member that supports the constituent parts of the laminating device 300, and has a bottom plate 312 installed on a horizontal ground (not shown) via an anti-vibration device (not shown), and a plurality of pillars erected on the bottom plate 312 314. A top plate 316 supported by a plurality of pillars 314.

上載台322係支撐基板211之載台,將保持基板211之保持面朝向下方而固定於框體310之頂板316。此處,基板211係保持於固持器221,經由此而藉由真空夾盤或靜電夾盤保持於保持面。The upper stage 322 is a stage that supports the substrate 211, and is fixed to the top plate 316 of the frame 310 with the holding surface of the substrate 211 facing downward. Here, the substrate 211 is held by the holder 221, and is held on the holding surface by a vacuum chuck or an electrostatic chuck therethrough.

下載台332係與保持於上載台322之基板211相對,而支撐基板213的載台。下載台332具有:配置於框體310之底板312上的X方向驅動部331;配置於X方向驅動部331上之Y方向驅動部333;及可升降地配置於Y方向驅動部333內之升降驅動部338;藉此,將支撐基板213之下載台332在XY方向、亦即在水平方向及Z軸方向,亦即在垂直方向驅動。此處,基板213係保持於固持器223,並經由此而藉由真空夾盤或靜電夾盤保持於載台上的保持面。The download stage 332 is a stage that faces the substrate 211 held on the upper stage 322 and supports the substrate 213. The downloading table 332 has: an X-direction driving part 331 arranged on the bottom plate 312 of the frame 310; a Y-direction driving part 333 arranged on the X-direction driving part 331; Drive section 338; thereby, the download table 332 supporting the substrate 213 is driven in the XY direction, that is, in the horizontal direction and the Z axis direction, that is, in the vertical direction. Here, the substrate 213 is held by the holder 223, and is held by a vacuum chuck or an electrostatic chuck on the holding surface of the carrier through this.

此處,X方向驅動部331係在底板312上於X軸方向移動。Y方向驅動部333係在X方向驅動部331上於Y軸方向移動。以組合此等驅動部之動作的方式,下載台332係在底板312上於XY方向移動。藉此,可將支撐於下載台332上之基板213相對於支撐於上載台322之基板211而對準。Here, the X-direction driving unit 331 moves on the bottom plate 312 in the X-axis direction. The Y-direction drive unit 333 moves in the Y-axis direction on the X-direction drive unit 331. By combining the actions of these driving parts, the download table 332 is moved on the bottom plate 312 in the XY direction. In this way, the substrate 213 supported on the download table 332 can be aligned with the substrate 211 supported on the upper stage 322.

此外,升降驅動部338相對於Y方向驅動部333於Z軸方向升降。下載台332支撐於升降驅動部338上。藉此,可將支撐於下載台332之基板213按壓至支撐於上載台322的基板211。In addition, the raising/lowering drive portion 338 is raised and lowered in the Z-axis direction with respect to the Y-direction driving portion 333. The download platform 332 is supported on the lifting driving part 338. Thereby, the substrate 213 supported on the download station 332 can be pressed to the substrate 211 supported on the upper stage 322.

另外,亦可將X方向驅動部331及Y方向驅動部333作為粗動部及微動部而構成。藉此,組合藉由粗動部之高輸出量與藉由微動部的高精度對準,可將支撐於下載台332之基板213高精度且高速對準。In addition, the X-direction drive portion 331 and the Y-direction drive portion 333 may be configured as a coarse movement portion and a fine movement portion. Thereby, by combining the high output of the coarse movement part and the high precision alignment by the fine movement part, the substrate 213 supported on the loading table 332 can be aligned with high precision and high speed.

另外,亦可進一步設置使下載台332繞Z軸旋轉之旋轉驅動部及使下載台332搖動之搖動驅動部。藉由旋轉驅動部使保持於下載台332之基板213旋轉,並藉由搖動驅動部將下載台332對上載台322平行,可提高基板211、213之對準精度。In addition, a rotary drive unit that rotates the download platform 332 around the Z axis and a swing drive unit that swings the download platform 332 can be further provided. The substrate 213 held by the download table 332 is rotated by the rotation driving part, and the download table 332 is parallel to the upper stage 322 by the swing driving part, so that the alignment accuracy of the substrates 211 and 213 can be improved.

干涉儀341係測量下載台332之位置的測量器,作為一個例子係固定於框體310左側的支柱314。干涉儀341對設於下載台332(此處係Y方向驅動部333)之側面的鏡面投射測量光,以將反射光與參照光(無圖示)重疊來檢測的方式,測量下載台332在水平方向之位置。其測量結果供給至控制裝置150。The interferometer 341 is a measuring instrument that measures the position of the loading platform 332, and is fixed to the pillar 314 on the left side of the frame 310 as an example. The interferometer 341 projects measurement light on the mirror surface provided on the side surface of the download table 332 (here, the Y-direction drive section 333), and detects the reflected light and the reference light (not shown). The measurement download table 332 is located at Position in the horizontal direction. The measurement result is supplied to the control device 150.

顯微鏡324係檢測支撐於下載台332上之基板213的對位標記之檢測系統,且朝向下方而固定於框體310之頂板316。顯微鏡324之檢測結果供給至控制裝置150。The microscope 324 is a detection system for detecting the alignment mark of the substrate 213 supported on the download table 332, and is fixed to the top plate 316 of the frame 310 facing downward. The detection result of the microscope 324 is supplied to the control device 150.

顯微鏡334係檢測支撐於上載台322上之基板211的對位標記之檢測系統,且朝向上方而固定於下載台332(此處,係Y方向驅動部333)之上面左側。顯微鏡334之檢測結果供給至控制裝置150。The microscope 334 is a detection system that detects the alignment mark of the substrate 211 supported on the upper stage 322, and is fixed to the upper left side of the download stage 332 (here, the Y-direction driving part 333) facing upward. The detection result of the microscope 334 is supplied to the control device 150.

活化裝置326係產生淨化保持於下載台332上之基板213上面的電漿之裝置,且朝向下方固定於框體310之頂板316。The activation device 326 is a device that purifies the plasma on the substrate 213 held on the download table 332, and is fixed to the top plate 316 of the frame 310 facing downward.

活化裝置336係產生淨化支撐於上載台322上之基板211表面的電漿之裝置,且朝向上方固定於下載台332(此處係Y方向驅動部333)之上面左側。The activation device 336 is a device that purifies the plasma on the surface of the substrate 211 supported on the upper stage 322, and is fixed to the upper left side of the download stage 332 (here, the Y-direction driving part 333) facing upward.

另外,下載台332之位置、或是顯微鏡324,334之相對位置可藉由驅動下載台332,將顯微鏡334定位於顯微鏡324正下方,將顯微鏡324,334相互或是對共同的指標對焦,以重設藉由干涉儀341之測量光的光軸所設定之測量座標的方式校準(參照圖13A)。顯微鏡324,334之相對位置亦稱為基線,該相對位置之校準亦稱為基線計測。In addition, the position of the downloading station 332 or the relative position of the microscopes 324 and 334 can be driven by driving the downloading station 332 to position the microscope 334 directly under the microscope 324, and focus the microscopes 324 and 334 on each other or on the common index, so as to Reset the calibration by the method of measuring the coordinates set by the optical axis of the measuring light of the interferometer 341 (refer to FIG. 13A). The relative position of the microscopes 324 and 334 is also called the baseline, and the calibration of the relative position is also called the baseline measurement.

貼合檢測裝置350係檢測基板211、213之貼合狀態的裝置,且包含:複數個電極351、電極驅動裝置352、及檢測部353。The bonding detection device 350 is a device that detects the bonding state of the substrates 211 and 213, and includes a plurality of electrodes 351, an electrode driving device 352, and a detection unit 353.

複數個電極351係用於檢測基板211在Z軸方向之位置的電極,且就基板211、213之面方向,包含不接觸地夾著基板211、213而配置之至少一對電極。此處,一對電極彼此相對之電極面中的至少一方沿著與XY方向,即面方向交叉的方向,亦即沿著Z軸方向具有寬度變化的形狀。本實施形態係形成圓形,但不限於此,亦可為橢圓、三角形、菱形、梯形等。藉此,藉由基板211在Z軸方向動作,與基板211相對之電極部分的寬度或面積S改變,藉此,一對電極間之靜電電容,或是與靜電電容呈正或負相關的測量量(將此等統稱為靜電特性)會變化。此處,電極間之靜電電容C假設為由基板211而支配性地決定時,使用介電常數ε及一對電極之離開距離D,則可得為C=εS/D。就複數個電極351之配置進一步後述之。The plurality of electrodes 351 are electrodes for detecting the position of the substrate 211 in the Z-axis direction, and include at least a pair of electrodes that are arranged to sandwich the substrates 211 and 213 without contact in the surface direction of the substrates 211 and 213. Here, at least one of the electrode surfaces of the pair of electrodes facing each other has a shape whose width changes along the XY direction, that is, the surface direction, that is, along the Z-axis direction. In this embodiment, a circle is formed, but it is not limited to this, and it may also be an ellipse, triangle, rhombus, trapezoid, or the like. Thereby, by the substrate 211 moving in the Z-axis direction, the width or area S of the electrode portion opposite to the substrate 211 is changed, whereby the electrostatic capacitance between a pair of electrodes is a positive or negative correlation with the electrostatic capacitance. (These are collectively referred to as electrostatic characteristics) will change. Here, when the electrostatic capacitance C between the electrodes is assumed to be dominantly determined by the substrate 211, using the dielectric constant ε and the separation distance D of the pair of electrodes, it can be obtained as C=εS/D. The arrangement of the plurality of electrodes 351 will be further described later.

另外,當為具有三角形、菱形、梯形等多邊形狀之電極面的電極時,與基板211相對之電極部分的面積S(Z)對於基板211在Z軸方向之位置Z的關係會變成線形,因此可得到電極間之靜電特性C對於基板211的Z位置之線形性。相對於此,當為圓形等之電極時,與基板211相對之電極部分的面積S(Z)對於基板211之Z位置的關係為非線形,因此亦可使用Z位置與面積S(Z)之關係將電極間之靜電特性C對於Z位置的關係線性化。In addition, in the case of an electrode having a polygonal electrode surface such as a triangle, a rhombus, a trapezoid, etc., the relationship between the area S(Z) of the electrode portion facing the substrate 211 and the position Z of the substrate 211 in the Z-axis direction becomes linear, so The linearity of the electrostatic characteristic C between the electrodes with respect to the Z position of the substrate 211 can be obtained. In contrast, in the case of a circular electrode, the area S(Z) of the electrode portion facing the substrate 211 has a non-linear relationship with the Z position of the substrate 211. Therefore, the Z position and the area S(Z) can also be used. The relationship linearizes the relationship between the electrostatic characteristic C between the electrodes and the Z position.

電極驅動裝置352在圖示之例中係將複數個電極351移動至基板211、213之側方,並且從基板211、213之側方退出的裝置。電極驅動裝置352以框體310之頂板316固定於上載台322的側方,藉由例如電磁馬達在Z軸方向驅動複數個電極351。電極驅動裝置352在將基板211搬入上載台322時,將複數個電極351退至不接觸基板211的位置,在檢測對位標記時等而下載台332移動時,將複數個電極351退至不接觸基板213之位置。In the example shown in the figure, the electrode driving device 352 is a device that moves a plurality of electrodes 351 to the sides of the substrates 211 and 213 and retreats from the sides of the substrates 211 and 213. The electrode driving device 352 is fixed to the side of the upper stage 322 by the top plate 316 of the frame 310, and drives a plurality of electrodes 351 in the Z-axis direction by, for example, an electromagnetic motor. The electrode driving device 352 retracts the plurality of electrodes 351 to a position where the substrate 211 does not contact the substrate 211 when the substrate 211 is loaded into the upper stage 322, and retracts the plurality of electrodes 351 to a position where the loading table 332 moves during detection of the alignment mark. Contact the position of the substrate 213.

另外,電極驅動裝置352亦可以使複數個電極351所包含之構成電極對的2個電極在彼此接近方向、彼此離開方向、或是彼此不同方向移動的方式,將複數個電極351移動至基板211、213之側方,或是從基板211、213之周圍退出。此外,電極驅動裝置352亦可、僅從側方退出,而不將複數個電極351移動至基板211、213的側方。In addition, the electrode driving device 352 can also move the two electrodes of the electrode pair included in the plurality of electrodes 351 in the approaching direction, the separation direction, or the direction different from each other, and move the plurality of electrodes 351 to the substrate 211 , 213 to the side, or exit from around the base plate 211, 213. In addition, the electrode driving device 352 may only withdraw from the side without moving the plurality of electrodes 351 to the side of the substrates 211 and 213.

另外,在上載台322以足夠之行程升降,連同顯微鏡324具有足夠大範圍之焦點深度情況下,亦可以升降上載台322及下載台332的方式將複數個電極351移動至基板211、213的側方,並且從側方退出,來取代升降複數個電極351。該情況下,亦可不設電極驅動裝置352。此外,亦可使複數個電極351之一部分電極351移動,不需要使全部複數個電極351移動。In addition, when the upper stage 322 is raised and lowered with a sufficient stroke and the microscope 324 has a sufficiently large focal depth, the upper stage 322 and the download stage 332 can also be raised and lowered to move the plurality of electrodes 351 to the sides of the substrates 211 and 213. And withdraw from the side to replace the electrodes 351 ascending and descending. In this case, the electrode driving device 352 may not be provided. In addition, it is also possible to move a part of the electrodes 351 of the plurality of electrodes 351, and it is not necessary to move all the electrodes 351.

檢測部353檢測複數個電極351所包含之至少一對電極間的靜電特性。靜電特性可例如在一對電極間輸入交流電壓,而檢測因此所輸出之交流電流,並藉由從交流電壓及電流之比算出阻抗而檢測。檢測結果傳送至控制裝置150。藉此,可檢測基板211關於在Z軸方向的位置及動作,進而可檢測基板211、213在貼合中接觸區域之擴大過程等的狀態。檢測部353亦可按電極對設置,亦可就全部電極對共同設置。The detection unit 353 detects the electrostatic characteristics between at least a pair of electrodes included in the plurality of electrodes 351. The electrostatic characteristics can be detected by, for example, inputting an AC voltage between a pair of electrodes, detecting the resulting AC current, and calculating the impedance from the ratio of the AC voltage to the current. The detection result is transmitted to the control device 150. Thereby, the position and movement of the substrate 211 in the Z-axis direction can be detected, and the state of the expansion process of the contact area of the substrates 211 and 213 during bonding can be detected. The detection unit 353 may also be provided in pairs of electrodes, or may be provided in common for all electrode pairs.

圖4A所示之例係複數個電極351含有複數個成對的2個電極之組合,且包含:具有2個電極351a之電極對351A;具有2個電極351b之電極對351B;具有2個電極351c之電極對351C;具有2個電極351d之電極對351D;及具有2個電極351e之電極對351E。另外,如圖4A所示,亦可按電極對351A~351E設置檢測部353a~353e。該情況下,檢測部353a~353e各別獨立地檢測電極對351A~351E中構成對應電極對的2個電極351a~351e間(例如,檢測部353a檢測構成電極對351A之2個電極351a間)的靜電特性,並將其檢測結果傳送至控制裝置150。此外,亦可各別對複數個電極對351A~351E設置1個檢測部353。該情況下,檢測部353亦可就各別複數個電極對351A~351E使用不同頻率的交流訊號而檢測靜電特性。藉此,可重疊各別檢測訊號而一次檢測靜電特性,不會串擾。或是,如圖4B所示,亦可進一步設置從複數個電極351a~351e中任意選擇2個而重組成複數個電極對351A~351E之任何一個的選擇器354,藉由該選擇器354依序將複數個電極對351A~351E連接於檢測部353。檢測部353依序檢測藉由選擇器354連接之電極對351A~351E的各個2個電極351a~351e間之靜電特性,並將其檢測結果傳送至控制裝置150。The example shown in FIG. 4A is that a plurality of electrodes 351 includes a combination of a plurality of pairs of two electrodes, and includes: an electrode pair 351A with two electrodes 351a; an electrode pair 351B with two electrodes 351b; and two electrodes The electrode pair 351C of 351c; the electrode pair 351D with two electrodes 351d; and the electrode pair 351E with two electrodes 351e. In addition, as shown in FIG. 4A, detection units 353a to 353e may be provided for each electrode pair 351A to 351E. In this case, the detection units 353a to 353e independently detect the gap between the two electrodes 351a to 351e constituting the corresponding electrode pair in the electrode pairs 351A to 351E (for example, the detection unit 353a detects the gap between the two electrodes 351a constituting the electrode pair 351A). The electrostatic characteristics of the sensor, and the detection result is transmitted to the control device 150. In addition, one detection unit 353 may be provided for a plurality of electrode pairs 351A to 351E, respectively. In this case, the detection unit 353 may use AC signals of different frequencies for each of the plurality of electrode pairs 351A to 351E to detect electrostatic characteristics. Thereby, it is possible to superimpose the respective detection signals to detect the electrostatic characteristics at one time without crosstalk. Or, as shown in FIG. 4B, a selector 354 that randomly selects two from the plurality of electrodes 351a to 351e and regroups into any one of the plurality of electrode pairs 351A to 351E can be further provided, and the selector 354 depends on A plurality of electrode pairs 351A to 351E are connected to the detection unit 353 sequentially. The detection unit 353 sequentially detects the electrostatic characteristics between the respective two electrodes 351 a to 351 e of the electrode pair 351A to 351E connected by the selector 354, and transmits the detection result to the control device 150.

另外,控制裝置150包含:依據電極對351A~351E之各個2個電極351a~351e間的靜電特性檢測結果來判斷接觸區域狀態之判斷部150a;及依據判斷部150a之判斷結果控制基板211、213間之斜度的控制部150b。藉由判斷部150a判斷為接觸區域215之擴大並不一樣時,藉由控制部150b控制下載台332,以接觸區域215之擴大往迅速或緩慢的方向來增大或縮小基板213對基板211之斜度的方式,可將接觸區域215一樣地擴大。In addition, the control device 150 includes: a judgment unit 150a for judging the state of the contact area based on the electrostatic characteristic detection result between each of the two electrodes 351a-351e of the electrode pair 351A-351E; and control substrates 211, 213 based on the judgment result of the judgment unit 150a The control section 150b of the inclination of the space. When the judging unit 150a determines that the expansion of the contact area 215 is not the same, the control unit 150b controls the download stage 332 to increase or decrease the distance between the substrate 213 and the substrate 211 with the expansion of the contact area 215 in a rapid or slow direction. With the slope method, the contact area 215 can be enlarged in the same way.

圖4A及圖4B將貼合檢測裝置350之複數個電極351的配置之一例在平視下顯示。基板211、213之一例為使各別中央一部分接觸而形成接觸區域215者。另外,將圖面上下方向設為縱方向,並將圖面左右方向設為橫方向。4A and 4B show an example of the arrangement of the plurality of electrodes 351 of the bonding detection device 350 in a head-up view. An example of the substrates 211 and 213 is one in which a contact area 215 is formed by contacting a part of the center of each. In addition, the vertical direction on the drawing is the vertical direction, and the horizontal direction on the drawing is the horizontal direction.

4個電極對351A~351E中所各別包含之2個電極351a~351d夾著由上載台322及下載台332所各別支撐之基板211、213的緣部而彼此相對配置。一對電極351a在平視時,係於縱方向上夾著從接觸區域215於左方向上離開之基板211、213的左緣部而配置。一對電極351b在平視時,係於縱方向上夾著從接觸區域215於右方向上離開之基板211、213的右緣部而配置。一對電極351c在平視時,係於橫方向上夾著從接觸區域215於上方向上離開之基板211、213的上緣部而配置。一對電極351d在平視時,係於橫方向上夾著從接觸區域215於下方向上離開之基板211、213的下緣部而配置。藉由檢測電極對351A~351D之各個2個電極351a~351d間的靜電特性,可在各緣部檢測接觸區域擴大的結束。The two electrodes 351a to 351d included in the four electrode pairs 351A to 351E are arranged to face each other across the edges of the substrates 211 and 213 respectively supported by the upper stage 322 and the download stage 332. The pair of electrodes 351a are arranged in the vertical direction to sandwich the left edges of the substrates 211 and 213 separated from the contact area 215 in the left direction. The pair of electrodes 351b are arranged in the vertical direction to sandwich the right edges of the substrates 211 and 213 separated from the contact area 215 in the right direction. The pair of electrodes 351c are arranged in a horizontal direction across the upper edges of the substrates 211 and 213 separated from the contact area 215 in the upper direction. The pair of electrodes 351d are arranged in a horizontal direction across the lower edges of the substrates 211 and 213 separated from the contact area 215 in the downward direction. By detecting the electrostatic characteristics between the respective two electrodes 351a to 351d of the electrode pairs 351A to 351D, the end of the expansion of the contact area can be detected at each edge.

電極對351E所包含之2個電極351e,就面方向上在通過接觸區域215之中心的直線上,於上載台322及下載台332所分別支撐之基板211、213的側方,亦即在平視時在各別的右上及左下彼此相對配置。以檢測一對電極351e之靜電特性的方式,而可檢測基板貼合時接觸區域之擴大過程。The two electrodes 351e included in the electrode pair 351E are on a straight line passing through the center of the contact area 215 in the plane direction, on the sides of the substrates 211 and 213 supported by the upper stage 322 and the download stage 332, that is, on the plane Depending on the time, they are arranged opposite to each other on the upper right and lower left of each. By detecting the electrostatic characteristics of the pair of electrodes 351e, the expansion process of the contact area when the substrate is attached can be detected.

另外,電極351e具有比電極351a~351d大之電極面。如圖4A及圖4B所示,在平視時,將電極351e配置於電極351a~351d之外側而不讓與電極351a~351d干擾時,可維持而讓電極對351E所獲得之訊號強度相對於由其他電極對351A~351D獲得之訊號強度不致變小。In addition, the electrode 351e has an electrode surface larger than the electrodes 351a to 351d. As shown in FIGS. 4A and 4B, when the electrode 351e is arranged outside the electrodes 351a-351d without interference with the electrodes 351a-351d in a head-up view, the signal intensity obtained by the electrode pair 351E can be maintained relative to the The signal intensity obtained by the other electrode pairs 351A to 351D will not decrease.

圖5A至圖6B進一步顯示複數個電極351之配置的另一例。5A to 6B further show another example of the arrangement of a plurality of electrodes 351.

圖5A所示之例係複數個電極351包含複數個成對的2個電極之組,包含:具有2個電極351a之電極對351A;具有2個電極351b之電極對351B;具有2個電極351c之電極對351C;及具有2個電極351d之電極對351D。4個電極對351A~351D所各別包含之2個電極351a~351d各別就面方向上夾著接觸區域215,並經由45度之角度間隔而彼此相對配置於基板211、213的側方。以檢測電極對351A~351D之各別靜電特性的方式,可檢測基板貼合時接觸區域215在各方向之擴大過程。另外,電極對數量不限於4個,亦可為2以上的複數個。The example shown in FIG. 5A is a plurality of electrodes 351 including a plurality of pairs of two electrode groups, including: an electrode pair 351A with two electrodes 351a; an electrode pair 351B with two electrodes 351b; and an electrode pair 351B with two electrodes 351c The electrode pair 351C; and the electrode pair 351D with two electrodes 351d. The two electrodes 351a to 351d included in the four electrode pairs 351A to 351D respectively sandwich the contact area 215 in the plane direction, and are arranged opposite to each other on the sides of the substrates 211 and 213 at an angular interval of 45 degrees. By detecting the respective electrostatic characteristics of the electrode pairs 351A to 351D, it is possible to detect the expansion process of the contact area 215 in each direction when the substrate is attached. In addition, the number of electrode pairs is not limited to four, and may be a plurality of two or more.

圖5B所示之例係對於圖5A所示之例的變化例,且設有在基板211、213之周方向可轉動地支撐電極對351A所包含之2個電極351a的導件355。2個電極351a就面方向上夾著接觸區域215而彼此相對配置於基板211、213的側方,並可沿著導件355任意改變周方向之位置。以改變2個電極351a之周方向位置,並檢測此等之間的靜電特性的方式,可檢測基板貼合中接觸區域215往任意方向之擴大過程。另外,電極對數量不限於1個,亦可係複數個。The example shown in FIG. 5B is a modification of the example shown in FIG. 5A, and is provided with a guide 355 that rotatably supports the two electrodes 351a included in the electrode pair 351A in the circumferential direction of the substrates 211 and 213. Two The electrodes 351a are arranged on the sides of the substrates 211 and 213 opposite to each other with the contact area 215 sandwiched in the surface direction, and the positions along the guide 355 in the circumferential direction can be changed arbitrarily. By changing the circumferential position of the two electrodes 351a and detecting the electrostatic characteristics between them, it is possible to detect the expansion process of the contact area 215 in any direction during substrate bonding. In addition, the number of electrode pairs is not limited to one, and may be plural.

圖6A所示之例係複數個電極351包含複數個成對的2個電極之組,包含:具有2個電極351a之電極對351A;具有2個電極351b之電極對351B;具有2個電極351c之電極對351C;具有2個電極351d之電極對351D;具有2個電極351e之電極對351E;具有2個電極351f之電極對351F;具有2個電極351g之電極對351G;及具有2個電極351h之電極對351H。8個電極對351A~351H各別所包含之2個電極351a~351h在基板211、213之側方互相夾著基板211、213而相對配置。The example shown in FIG. 6A is a plurality of electrodes 351 including a plurality of pairs of two electrode groups, including: an electrode pair 351A having two electrodes 351a; an electrode pair 351B having two electrodes 351b; and an electrode pair 351B having two electrodes 351c The electrode pair 351C; the electrode pair 351D with 2 electrodes 351d; the electrode pair 351E with 2 electrodes 351e; the electrode pair 351F with 2 electrodes 351f; the electrode pair 351G with 2 electrodes 351g; and the electrode pair 351G with 2 electrodes 351h electrode pair 351H. The two electrodes 351a to 351h included in each of the eight electrode pairs 351A to 351H are arranged to face each other while sandwiching the substrates 211 and 213 on the sides of the substrates 211 and 213.

3個電極對351A~351C在平視時,係以各對所包含之2個電極351a~351c於縱方向上夾著基板211、213之左緣部、中央之接觸區域215、及右緣部而於橫方向相互離開配置。此處,各對之一方的電極351a~351c於基板211、213之上於橫方向並列配置於直線上,另一方電極351a~351c於基板211、213之下於橫方向並列配置於直線上。When the three electrode pairs 351A to 351C are viewed in a horizontal view, the two electrodes 351a to 351c included in each pair sandwich the left edge portion of the substrates 211, 213, the center contact area 215, and the right edge portion in the vertical direction However, they are arranged apart from each other in the horizontal direction. Here, one of the electrodes 351a to 351c of each pair is arranged on a straight line in the lateral direction on the substrates 211 and 213, and the other electrode 351a to 351c is arranged on a straight line in the lateral direction under the substrates 211 and 213.

3個電極對351D~351F在平視中,係以各對所包含之2個電極351d~351f於橫方向夾著基板211、213之上緣部、中央之接觸區域215、及下緣部,而於縱方向相互離開配置。此處,各對之一方的電極351d~351f於基板211、213左方於縱方向並列配置於直線上,另一方電極351d~351f於基板211、213右方於縱方向並列配置於直線上。In a plan view of the three electrode pairs 351D to 351F, the two electrodes 351d to 351f included in each pair sandwich the upper edges of the substrates 211 and 213, the center contact area 215, and the lower edge in the horizontal direction. The arrangement is separated from each other in the longitudinal direction. Here, one of the electrodes 351d to 351f of each pair is arranged on a straight line in the vertical direction on the left of the substrates 211 and 213, and the other electrode 351d to 351f is arranged on a straight line in the vertical direction on the right of the substrates 211 and 213.

電極對351G所包含之2個電極351g在平視時,係夾著接觸區域215而配置於基板211、213的右上及左下方。The two electrodes 351 g included in the electrode pair 351G are arranged on the upper right and lower left of the substrates 211 and 213 with the contact area 215 sandwiched therebetween in a horizontal view.

電極對351H所包含之2個電極351h在平視時,係夾著接觸區域215而配置於基板211、213的左上及右下方。The two electrodes 351h included in the electrode pair 351H are arranged on the upper left and lower right of the substrates 211 and 213 with the contact area 215 sandwiched therebetween in a horizontal view.

以檢測電極對351A~351H之各別的靜電特性的方式,可從電極對351B之靜電特性檢測接觸區域215於縱方向之擴大過程,連同從電極對351D,351F之靜電特性檢知其結束,並且可從電極對351E之靜電特性檢測接觸區域215在橫方向之擴大過程,連同從電極對351A,351C之靜電特性檢知其結束,並且可從電極對351G,351H之靜電特性檢測接觸區域215在各斜方向的擴大過程。By detecting the respective electrostatic characteristics of the electrode pairs 351A to 351H, the expansion process of the contact area 215 in the longitudinal direction can be detected from the electrostatic characteristics of the electrode pair 351B, together with the detection of the end from the electrostatic characteristics of the electrode pairs 351D and 351F, In addition, the expansion process of the contact area 215 in the horizontal direction can be detected from the electrostatic characteristics of the electrode pair 351E, and the end can be detected from the electrostatic characteristics of the electrode pair 351A, 351C, and the contact area 215 can be detected from the electrostatic characteristics of the electrode pair 351G, 351H. Expansion process in each oblique direction.

圖6B所示之例係對圖6A所示之例的變化例,設有:於橫方向可移動地支撐電極對351A所包含之2個電極351a的一對導件356;及於縱方向可移動地支撐電極對351D所包含之2個電極351d的一對導件357。The example shown in FIG. 6B is a modification of the example shown in FIG. 6A, and is provided with a pair of guides 356 that movably support the two electrodes 351a included in the electrode pair 351A in the horizontal direction; A pair of guides 357 that movably supports the two electrodes 351d included in the electrode pair 351D.

2個電極351a中之一方配置於基板211、213的縱方向一側,另一方配置於另一側,且夾著基板211、213彼此相對。藉由將2個電極351a沿著導件356移動,可任意改變電極對351A於橫方向之位置。以改變電極對351A在橫方向之位置,並檢測電極對351A所包含之2個電極351a間的靜電特性的方式,可檢測基板貼合時接觸區域215在橫方向之各位置的擴大過程或其結束。另外,電極對351A之數量亦可係複數個,不限於1個。One of the two electrodes 351a is arranged on one side of the substrates 211 and 213 in the longitudinal direction, and the other is arranged on the other side, and faces each other with the substrates 211 and 213 therebetween. By moving the two electrodes 351a along the guide 356, the position of the electrode pair 351A in the horizontal direction can be arbitrarily changed. By changing the position of the electrode pair 351A in the horizontal direction, and detecting the electrostatic characteristics between the two electrodes 351a included in the electrode pair 351A, it is possible to detect the expansion process of the contact area 215 at each position in the horizontal direction when the substrate is attached. end. In addition, the number of electrode pairs 351A may be plural, and is not limited to one.

2個電極351d中之一方配置於基板211、213的橫方向一側,另一方配置於另一側,且夾著基板211、213彼此相對。藉由將2個電極351d沿著導件357移動,可任意改變電極對351D於縱方向之位置。以改變電極對351D在縱方向之位置,並檢測電極對351D所包含之2個電極351d間的靜電特性的方式,可檢測基板貼合時接觸區域215在縱方向之各位置的擴大過程或其結束。另外,電極對351D之數量亦可係複數個,不限於1個。One of the two electrodes 351d is arranged on one side of the substrates 211 and 213 in the lateral direction, and the other is arranged on the other side, and faces each other with the substrates 211 and 213 therebetween. By moving the two electrodes 351d along the guide 357, the position of the electrode pair 351D in the longitudinal direction can be arbitrarily changed. By changing the position of the electrode pair 351D in the vertical direction, and detecting the electrostatic characteristics between the two electrodes 351d included in the electrode pair 351D, it is possible to detect the expansion process of the contact area 215 at each position in the vertical direction when the substrate is attached. end. In addition, the number of electrode pairs 351D may be plural, and is not limited to one.

以下說明基板211、213之貼合原理。The bonding principle of the substrates 211 and 213 will be described below.

圖7A概略顯示已搬入至貼合裝置300之保持了基板211的固持器221之剖面構成。固持器221藉由靜電夾盤、真空夾盤等將基板211吸附保持於保持面222。此處,保持面222具有中央側高,而周緣低之彎曲的形狀。藉此,吸附保持於保持面222之基板211與保持面222密合而彎曲成中央側突出的凸狀,並維持其形狀。另外,固持器221之保持面222的形狀亦可係球面、拋物面、圓筒面等。在貼合裝置300中,彎曲成凸狀之基板211經由固持器221而支撐於上載台322。FIG. 7A schematically shows the cross-sectional structure of the holder 221 holding the substrate 211 that has been carried into the bonding apparatus 300. The holder 221 sucks and holds the substrate 211 on the holding surface 222 by an electrostatic chuck, a vacuum chuck, or the like. Here, the holding surface 222 has a curved shape with a high central side and a low peripheral edge. Thereby, the substrate 211 sucked and held on the holding surface 222 and the holding surface 222 are brought into close contact with each other and bends into a convex shape protruding from the center side, and the shape thereof is maintained. In addition, the shape of the holding surface 222 of the holder 221 may also be a spherical surface, a parabolic surface, a cylindrical surface, or the like. In the bonding apparatus 300, the substrate 211 bent into a convex shape is supported on the upper stage 322 via the holder 221.

圖7B概略顯示保持了基板213之固持器223的剖面構成。固持器223藉由靜電夾盤、真空夾盤等而將基板213吸附保持於保持面224。此處,保持面224具有平坦之形狀。藉此,吸附保持於保持面224之基板213與保持面224密合而形成平坦,並維持其形狀。在貼合裝置300中,基板213經由固持器223而支撐於下載台332。FIG. 7B schematically shows the cross-sectional structure of the holder 223 holding the substrate 213. The holder 223 sucks and holds the substrate 213 on the holding surface 224 by an electrostatic chuck, a vacuum chuck, or the like. Here, the holding surface 224 has a flat shape. Thereby, the substrate 213 sucked and held on the holding surface 224 and the holding surface 224 are brought into close contact with each other to form a flat surface and maintain its shape. In the bonding apparatus 300, the substrate 213 is supported by the loading table 332 via the holder 223.

圖8A顯示在基板貼合工序中對準2個基板211、213之狀態。基板211保持於固持器221,中央彎曲成凸狀,並經由固持器221而向下支撐於上載台322,基板213平坦地保持於固持器223,並經由固持器223而向上支撐於下載台332,並於面方向驅動下載台332而將基板213定位於基板211正下方。另外,基板211、213之至少一方表面藉由使用了活化裝置326,336之電漿暴露而活化。此時,貼合檢測裝置350之複數個電極351藉由電極驅動裝置352而配置於基板211、213的側方。FIG. 8A shows a state in which two substrates 211 and 213 are aligned in the substrate bonding process. The substrate 211 is held by the holder 221, the center is bent into a convex shape, and is supported downward on the upper stage 322 via the holder 221, and the substrate 213 is held flat on the holder 223, and is supported on the download stage 332 via the holder 223 upward. , And drive the download stage 332 in the surface direction to position the substrate 213 directly below the substrate 211. In addition, at least one surface of the substrates 211 and 213 is activated by plasma exposure using activation devices 326 and 336. At this time, the plurality of electrodes 351 of the bonding detection device 350 are arranged on the sides of the substrates 211 and 213 by the electrode driving device 352.

圖8B顯示基板貼合工序中在2個基板211、213之間形成接觸區域215的狀態。在經由固持器221而支撐於上載台322之基板211的中央彎曲成凸狀下,藉由升降驅動部338將下載台332以朝向上載台322靠近而將經由固持器223而平坦地支撐於下載台332的基板213按壓於基板211的方式,基板211、213之中央緊密接觸。藉此,於基板211、213中央形成成為貼合起點之接觸區域215。此時,基板211之周緣從基板213離開。FIG. 8B shows a state in which a contact area 215 is formed between the two substrates 211 and 213 in the substrate bonding process. With the center of the substrate 211 supported on the upper stage 322 via the holder 221 bent into a convex shape, the loading stage 332 is approached toward the upper stage 322 by the lift drive 338, and the download stage 332 is flatly supported by the holder 223. The substrate 213 of the stage 332 is pressed against the substrate 211 so that the centers of the substrates 211 and 213 are in close contact. Thereby, a contact area 215 serving as a starting point for bonding is formed in the center of the substrates 211 and 213. At this time, the periphery of the substrate 211 is separated from the substrate 213.

圖8C顯示在基板貼合工序中接合波進行中的狀態。解除由上載台322所保持之固持器221的保持,將基板211從上載台322釋放。此時,以基板211、213之至少一方表面被活化的方式,藉由基板211、213間之分子間力,以各別基板表面中接近之區域自律地相互吸附的方式,接觸區域215會擴大至周圍。藉此,以接合波232,即基板211、213接觸之接觸區域與尚未接觸的非接觸區域之邊界,從基板211、213之中央朝向周圍移動的方式,接觸區域215擴大而進行基板211、213之貼合。FIG. 8C shows a state in which the bonding wave is progressing in the substrate bonding process. The holder 221 held by the upper stage 322 is released, and the substrate 211 is released from the upper stage 322. At this time, in such a way that at least one of the surfaces of the substrates 211 and 213 is activated, the contact area 215 will be enlarged due to the intermolecular force between the substrates 211 and 213 in a manner that the adjacent areas of the respective substrate surfaces are automatically attracted to each other. To the surroundings. As a result, the bonding wave 232, that is, the boundary between the contact area of the substrates 211, 213 and the non-contact area that has not been in contact, moves from the center of the substrates 211, 213 to the surroundings, and the contact area 215 expands to perform the substrates 211, 213. The fit.

圖8D顯示基板貼合工序中基板貼合結束之狀態。接合波232移動至基板211、213之周緣,當接觸區域215擴大至整個基板211、213時,基板211、213彼此貼合而形成貼合基板230。FIG. 8D shows the state where the substrate bonding is completed in the substrate bonding process. The bonding wave 232 moves to the periphery of the substrates 211 and 213, and when the contact area 215 expands to the entire substrates 211, 213, the substrates 211, 213 are bonded to each other to form a bonded substrate 230.

該基板211、213之貼合原理中,基板211、213之接觸區域215係從基板211、213之中央朝向周緣擴大。藉此,在貼合前被夾在基板211、213間之環境氣體,例如大氣,在基板211、213之接觸區域擴大的過程以向外側擠出的方式,而防止在貼合之基板211、213間殘留氣泡。In the bonding principle of the substrates 211, 213, the contact area 215 of the substrates 211, 213 expands from the center of the substrates 211, 213 toward the periphery. As a result, the ambient gas sandwiched between the substrates 211 and 213 before bonding, such as the atmosphere, is extruded to the outside in the process of expanding the contact area of the substrates 211 and 213, thereby preventing the bonding of the substrates 211, 211 and 213. Air bubbles remain among 213.

另外,本實施形態中係舉例貼合變形成凸狀之基板211與平坦之基板213的情況,但例如使基板211、213兩者皆變形成凸狀的情況、使基板211、213彼此變形成曲率不同之凸狀與凹狀的情況、使基板211、213變形成中心軸不平行之圓筒狀的情況,都同樣地可在基板211、213之間形成接觸區域215,並以將其擴大的方式而貼合。In addition, in this embodiment, the case where the substrate 211 deformed into a convex shape and the flat substrate 213 are bonded together is exemplified. For example, when both the substrates 211 and 213 are deformed into a convex shape, the substrates 211 and 213 are transformed into each other. In the case of convex and concave shapes with different curvatures, and in the case of deforming the substrates 211 and 213 into a cylindrical shape with a non-parallel central axis, the contact area 215 can be formed between the substrates 211 and 213 and enlarged. The way it fits.

圖9A及圖9B顯示電極351之電極形狀與基板211之位移檢測的原理。如使用圖8A至圖8D之說明,在基板貼合工序中,以接合波232從基板211、213之中央朝向周圍移動,基板211、213之間的接觸區域215擴大的方式進行基板211、213貼合。此處,電極351之電極面係圓形狀,且電極351係配置成為讓基板211之端面與圓形狀之電極面的上半部相對者。藉此,基板211之端面從Z軸方向之位置Z1 移動至更低的位置Z2 ,隨之,與基板211之端面相對的電極部分之面積從S1 增大為S2 ,電極351和與此相對的另外電極351之間的靜電電容從C1 =εS1 /D增大為C2 =εS2 /D。此處,ε係基板211之介電常數,D係電極之離開距離,電極間之靜電電容假設係由基板211支配地決定。因此,以檢測2個電極351間之靜電電容的變化的方式可檢測基板211在Z軸方向之位置,藉此,可檢測形成於基板211、213之間的接觸區域215之擴大過程。9A and 9B show the electrode shape of the electrode 351 and the principle of displacement detection of the substrate 211. As explained using FIGS. 8A to 8D, in the substrate bonding process, the substrates 211, 213 are performed so that the bonding wave 232 moves from the center of the substrates 211, 213 to the surroundings, and the contact area 215 between the substrates 211, 213 is enlarged. fit. Here, the electrode surface of the electrode 351 has a circular shape, and the electrode 351 is arranged such that the end surface of the substrate 211 is opposed to the upper half of the circular electrode surface. Thereby, the end surface of the substrate 211 moves from the position Z 1 in the Z-axis direction to a lower position Z 2 , and accordingly, the area of the electrode portion opposite to the end surface of the substrate 211 increases from S 1 to S 2 , and the electrodes 351 and The electrostatic capacitance between the other electrodes 351 facing this increases from C 1 =εS 1 /D to C 2 =εS 2 /D. Here, ε is the dielectric constant of the substrate 211, the separation distance of the D-type electrodes, and the electrostatic capacitance between the electrodes are assumed to be dominated by the substrate 211. Therefore, it is possible to detect the position of the substrate 211 in the Z-axis direction by detecting the change of the electrostatic capacitance between the two electrodes 351, thereby detecting the expansion process of the contact area 215 formed between the substrates 211 and 213.

圖9C顯示在基板211、213之貼合過程中基板211的位移檢測結果之一例。該例係顯示圖4A中之一對電極351e的靜電電容檢測結果依時間的變化。該時間變化反映出2個電極351e間之電場中的基板211之動作。基板211、213之貼合藉由解除上載台322對基板211之保持而在時刻10秒鐘開始。隨之,靜電電容從值C1 增大,在貼合進行中之時刻12~18秒鐘的期間T之間大體上一定,然後,再度增大而飽和至C2 。藉此,在時刻24秒鐘貼合結束。從該靜電電容之時間變化可讀取接合波232之擴大,亦即接觸區域215之擴大過程。FIG. 9C shows an example of the displacement detection result of the substrate 211 during the bonding process of the substrates 211 and 213. This example shows the time-dependent change of the electrostatic capacitance detection result of a pair of electrodes 351e in FIG. 4A. This time change reflects the movement of the substrate 211 in the electric field between the two electrodes 351e. The bonding of the substrates 211 and 213 is started at time 10 seconds by releasing the holding of the substrate 211 by the upper stage 322. Along with this, the electrostatic capacitance increases from the value C 1 , and is substantially constant during the period T from 12 to 18 seconds at the time of lamination, and then increases again to saturate to C 2 . By this, the lamination is completed in 24 seconds at time. From the time change of the electrostatic capacitance, the expansion of the bonding wave 232, that is, the expansion process of the contact area 215 can be read.

圖9D顯示在基板211、213之貼合過程中基板211的位移檢測結果之另一例。該例係顯示圖4A中一對電極351a之靜電電容檢測結果依時間的變化。基板211、213之貼合在解除上載台322對基板211之保持下於時刻16秒開始。隨之,靜電電容從值C1 增大,在貼合進行中之時刻18~26秒的期間T之間大體上一定,然後,再度增大而飽和至C2 。藉此,在時刻35秒接合波232擴大,亦即可解讀成接觸區域215之擴大到達基板211、213的左緣部而貼合結束。FIG. 9D shows another example of the detection result of the displacement of the substrate 211 during the bonding process of the substrates 211 and 213. This example shows the change of the electrostatic capacitance detection result of the pair of electrodes 351a in FIG. 4A with time. The bonding of the substrates 211 and 213 starts at time 16 seconds when the holding of the substrate 211 by the upper stage 322 is released. Along with this, the electrostatic capacitance increases from the value C 1 , and is substantially constant during the period T from 18 to 26 seconds at the time of bonding, and then increases again to saturate to C 2 . Thereby, the bonding wave 232 expands at time 35 seconds, which can be interpreted as the expansion of the contact area 215 reaching the left edges of the substrates 211 and 213 and the bonding is completed.

圖10A及圖10B顯示電極351之電極形狀與基板211之位移檢測的另一原理。該例中,電極351的電極面係圓形狀,且為電極351配置成讓基板211之端面與圓形狀之電極面的下半部相對者。藉此,基板211之端面從Z軸方向之位置Z1 移動至更低的位置Z2 ,隨之,與基板211之端面相對的電極部分之面積從S1 減少為S2 ,電極351和與此相對的另一電極351之間的靜電電容從C1 =εS1 /D減少為C2 =εS2 /D。此處,ε係基板211之介電常數,D係電極之離開距離,電極間之靜電電容假設由基板211支配地決定。瞭解到即使依該電極之配置,仍可以檢測2個電極351間之靜電電容的變化的方式,檢測基板211在Z軸方向之位置,藉此檢測形成於基板211、213之間的接觸區域215之擴大過程。10A and 10B show another principle of the electrode shape of the electrode 351 and the displacement detection of the substrate 211. In this example, the electrode surface of the electrode 351 has a circular shape, and the electrode 351 is arranged such that the end surface of the substrate 211 is opposed to the lower half of the circular electrode surface. Thereby, the end face of the substrate 211 moves from the position Z 1 in the Z-axis direction to a lower position Z 2 , and accordingly, the area of the electrode portion opposite to the end face of the substrate 211 is reduced from S 1 to S 2 , and the electrodes 351 and The electrostatic capacitance between the opposite electrode 351 is reduced from C 1 =εS 1 /D to C 2 =εS 2 /D. Here, ε is the dielectric constant of the substrate 211, the separation distance of the D-type electrodes, and the electrostatic capacitance between the electrodes are presumably determined by the substrate 211. It is understood that even according to the arrangement of the electrodes, it is possible to detect the change of the electrostatic capacitance between the two electrodes 351, and to detect the position of the substrate 211 in the Z-axis direction, thereby detecting the contact area 215 formed between the substrates 211 and 213 The expansion process.

圖10C顯示在基板211、213之貼合過程中基板211的位移檢測結果之一例。該例中,係顯示圖4A中之一對電極351e的靜電電容檢測結果依時間的變化。基板211、213之貼合以解除上載台322對基板211之保持的方式而於時刻12秒開始。隨之,靜電電容從值C1 減少,在貼合進行中之時刻17~23秒的期間T之間大體上一定,然後,再度減少而飽和至C2 。藉此,在時刻37秒貼合結束。由該靜電電容之時間變化,可解讀成接合波232之擴大,亦即接觸區域215之擴大過程。FIG. 10C shows an example of the detection result of the displacement of the substrate 211 during the bonding process of the substrates 211 and 213. In this example, the result of the electrostatic capacitance detection of a pair of electrodes 351e in FIG. 4A is shown as a function of time. The bonding of the substrates 211 and 213 starts at time 12 seconds by releasing the holding of the substrate 211 by the upper stage 322. Along with this, the electrostatic capacitance decreases from the value C 1 , and is substantially constant during the period T from 17 to 23 seconds at the time of lamination, and then decreases again to saturate to C 2 . With this, the bonding ends at time 37 seconds. From the time change of the electrostatic capacitance, it can be interpreted as the expansion of the bonding wave 232, that is, the expansion process of the contact area 215.

另外,即使在圖9C、圖9D、及圖10C之任何一例中,仍有靜電電容之變化極小的期間,與貼合進行無關。因此,判斷部150a由靜電電容之變化開始來判斷成貼合已開始,並將從此包含靜電電容變化極小之期間的指定期間,例如約10秒鐘作為遮罩期間,並從遮罩期間結束後由靜電電容的飽和來判斷為貼合結束。In addition, even in any of the examples in FIG. 9C, FIG. 9D, and FIG. 10C, there is still a period in which the change in capacitance is extremely small, regardless of the bonding process. Therefore, the judging unit 150a judges that the bonding has started from the beginning of the change in the electrostatic capacitance, and sets a specified period including a period in which the electrostatic capacitance change is extremely small, for example, about 10 seconds, as the mask period, and after the end of the mask period The end of bonding is determined by the saturation of the electrostatic capacitance.

另外,如圖9C及圖10C所示之例,以檢測一對電極351e間之靜電電容的變化的方式,可瞭解與配置有電極351e之方向相關的接合波232之擴大,亦即接觸區域215擴大之進行。因此,藉由貼合檢測裝置350(亦為接觸區域215之擴大進行不均檢知機構的一例),例如就圖5A所示之配置的電極對351A~351D,以累積電極對351A~351D在測試用之基板的貼合工序中靜電電容檢測結果依時間的變化,並掌握與接觸區域215進行擴大之關係的方式,可由電極對351A~351D在基板211、213之貼合工序中靜電電容的檢測結果,檢知就各別電極對之配置方向的接觸區域215之擴大的進行速度,特別是擴大的進行不均。In addition, as shown in the example shown in FIGS. 9C and 10C, by detecting the change of the electrostatic capacitance between the pair of electrodes 351e, it is possible to understand the expansion of the junction wave 232 related to the direction in which the electrodes 351e are arranged, that is, the contact area 215 Expand it. Therefore, by bonding the detection device 350 (also an example of an uneven detection mechanism for the expansion of the contact area 215), for example, the electrode pairs 351A to 351D arranged as shown in FIG. During the bonding process of the test substrates, the electrostatic capacitance detection results change with time, and the way to grasp the relationship with the expansion of the contact area 215 can be determined by the capacitance of the electrode pairs 351A to 351D in the bonding process of the substrates 211 and 213. As a result of the detection, the progress speed of the expansion of the contact area 215 in the arrangement direction of the individual electrode pairs, especially the uneven progress of the expansion, is detected.

圖11A及圖11B顯示電極351之另外電極形狀與基板211之位移檢測的原理。該例中,電極351的電極面係矩形狀,且相對於Z軸方向傾斜配置。藉此,基板211之端面從Z軸方向之位置Z1 移動至更低的位置Z2 ,隨之,與基板211之端面相對的電極部分之面積為S而不變化,但換成電極與基板211之端面的離開距離從D1 減少為D2 ,電極351和與其相對的另一電極351之間的靜電電容從C1 =ε0 S/D1 增大為C2 =ε0 S/D2 。此處,ε0 係大氣之介電常數,並假設電極間之靜電電容的變化由大氣部分之距離的變化而支配地決定。瞭解到即使依該電極之配置,仍可以檢測2個電極351間之靜電電容的變化的方式,檢測基板211在Z軸方向之位置,藉此檢測形成於基板211、213之間的接觸區域215之擴大過程。11A and 11B show the other electrode shape of the electrode 351 and the principle of displacement detection of the substrate 211. In this example, the electrode surface of the electrode 351 has a rectangular shape and is arranged obliquely with respect to the Z-axis direction. As a result, the end surface of the substrate 211 moves from the position Z 1 in the Z-axis direction to a lower position Z 2 , and accordingly, the area of the electrode portion opposite to the end surface of the substrate 211 remains S unchanged, but it is replaced by the electrode and the substrate The separation distance of the end face of 211 is reduced from D 1 to D 2 , and the electrostatic capacitance between the electrode 351 and the opposite electrode 351 increases from C 10 S/D 1 to C 20 S/D 2 . Here, ε 0 is the dielectric constant of the atmosphere, and it is assumed that the change of the electrostatic capacitance between the electrodes is dominated by the change of the distance of the atmosphere. It is understood that even according to the arrangement of the electrodes, it is possible to detect the change of the electrostatic capacitance between the two electrodes 351, and to detect the position of the substrate 211 in the Z-axis direction, thereby detecting the contact area 215 formed between the substrates 211 and 213 The expansion process.

另外,即使採用圖9A所示之圓形狀等的電極時,亦可相對於Z軸傾斜而配置於基板的側方,不限於圖11A所示之矩形狀電極的情況。藉此,可提高2個電極351間之靜電特性的檢測靈敏度。In addition, even when an electrode having a circular shape as shown in FIG. 9A is used, it can be arranged on the side of the substrate inclined with respect to the Z axis, and it is not limited to the case of the rectangular electrode shown in FIG. 11A. Thereby, the detection sensitivity of the electrostatic characteristics between the two electrodes 351 can be improved.

圖12顯示由貼合裝置300之基板貼合步驟的流程。另外,基板貼合系統100係在控制裝置150之控制部150b的控制下構成各部進行動作。先行在基板貼合之前,將供貼合之基板210收容的基板匣盒120及供已貼合之基板230收容的基板匣盒130固定於框體110。另外,複數個電極351係藉由電極驅動裝置352上升,而退至上載台322之側方者。FIG. 12 shows the flow of the substrate bonding step by the bonding device 300. In addition, the board bonding system 100 constitutes various parts and operates under the control of the control part 150b of the control device 150. Prior to the substrate bonding, the substrate cassette 120 for accommodating the bonded substrate 210 and the substrate cassette 130 for accommodating the bonded substrate 230 are fixed to the frame 110. In addition, the plurality of electrodes 351 are raised by the electrode driving device 352 and retracted to the side of the upper stage 322.

在步驟S101中,係將基板210搬入貼合裝置300。如圖13A所示,藉由搬送裝置140從固持器暫存箱400取出固持器221而搬送至預對位器500,從基板匣盒120取出基板211而搬送至預對位器500,使基板211保持於固持器221。將保持基板211之固持器221搬入至貼合裝置300,並將基板211朝向下方而固定於上載台322。此外,藉由搬送裝置140從固持器暫存箱400取出固持器223,而搬送至預對位器500,從基板匣盒120取出基板213而搬送至預對位器500,使基板213保持於固持器223。將保持基板213之固持器223搬入至貼合裝置300,並將基板213朝向上方而固定於下載台332。In step S101, the substrate 210 is carried into the bonding apparatus 300. As shown in FIG. 13A, the holder 221 is taken out from the holder temporary storage box 400 by the transport device 140 and transported to the pre-aligner 500, and the substrate 211 is taken out from the substrate cassette 120 and transported to the pre-aligner 500, so that the substrate 211 is held by the holder 221. The holder 221 holding the substrate 211 is carried into the bonding apparatus 300, and the substrate 211 is fixed to the upper stage 322 facing downward. In addition, the holder 223 is taken out from the holder temporary storage box 400 by the transport device 140 and transported to the pre-aligner 500, and the substrate 213 is taken out from the substrate cassette 120 and transported to the pre-aligner 500, so that the substrate 213 is held in Holder 223. The holder 223 holding the substrate 213 is carried into the bonding apparatus 300, and the substrate 213 is fixed to the download table 332 with the substrate 213 facing upward.

接著,校準下載台332之位置,亦即顯微鏡324、334的相對位置。其詳細步驟如前述。Then, the position of the download station 332, that is, the relative position of the microscopes 324 and 334, is calibrated. The detailed steps are as described above.

在步驟S102中,係使用顯微鏡324、334檢測基板211、213之各別對位標記。如圖13B所示,藉由控制裝置150之控制,干涉儀341測量下載台332之位置,並依據其測量結果,藉由X方向驅動部331及Y方向驅動部333於水平方向驅動下載台332,而將基板213之對位標記逐次定位於顯微鏡324的視野內,而被顯微鏡324檢測。此外,藉由控制裝置150之控制,干涉儀341測量下載台332之位置,並依據其測量結果藉由X方向驅動部331及Y方向驅動部333於水平方向驅動下載台332,而將基板211之對位標記逐次定位於顯微鏡334的視野內,而被顯微鏡334檢測。從干涉儀341之測量結果與顯微鏡324、334的檢測結果來決定基板211、213之對位標記的相互位置關係,亦即基板211、213的位置關係。In step S102, the respective alignment marks of the substrates 211 and 213 are detected using microscopes 324 and 334. As shown in FIG. 13B, under the control of the control device 150, the interferometer 341 measures the position of the download platform 332, and according to the measurement result, drives the download platform 332 in the horizontal direction by the X-direction drive unit 331 and the Y-direction drive unit 333 , And the alignment marks of the substrate 213 are successively positioned in the field of view of the microscope 324 and detected by the microscope 324. In addition, under the control of the control device 150, the interferometer 341 measures the position of the download table 332, and drives the download table 332 in the horizontal direction by the X-direction drive unit 331 and the Y-direction drive unit 333 according to the measurement result, and the substrate 211 The alignment marks are successively positioned in the field of view of the microscope 334 and detected by the microscope 334. From the measurement results of the interferometer 341 and the inspection results of the microscopes 324 and 334, the mutual positional relationship of the alignment marks of the substrates 211, 213, that is, the positional relationship of the substrates 211, 213, is determined.

在步驟S103中,係藉由活化裝置326、336活化基板211、213的表面。如圖13C所示,藉由活化裝置326將基板213之表面暴露於電漿中,並藉由活化裝置336將基板211之表面暴露於電漿中,藉由X方向驅動部331及Y方向驅動部333於箭頭S之方向驅動下載台332,藉由淨化整個基板211、213而將其活化。藉此,在使基板211、213接觸時,基板211、213彼此相互黏合而一體化。In step S103, the surfaces of the substrates 211 and 213 are activated by the activation devices 326 and 336. As shown in FIG. 13C, the surface of the substrate 213 is exposed to plasma by the activation device 326, and the surface of the substrate 211 is exposed to the plasma by the activation device 336, which is driven by the X-direction driving portion 331 and the Y-direction drive. The part 333 drives the download stage 332 in the direction of the arrow S, and activates it by cleaning the entire substrates 211 and 213. Thereby, when the substrates 211 and 213 are brought into contact, the substrates 211 and 213 are bonded to each other and integrated.

另外,基板211、213亦可藉由研磨等之機械性處理、清洗之化學性處理而活化。此外,基板211、213亦可藉由使用不活潑氣體之濺射蝕刻、離子束、或高速原子束等而活化。使用離子束或高速原子束時,可在減壓下生成貼合裝置300。此外,亦可藉由照射紫外線、或臭氧灰化機等來活化基板211、213。此外,例如亦可使用液體或氣體之蝕刻劑,藉由化學性淨化基板211、213之表面而活化。此外,亦可併用複數種類之活化方法。In addition, the substrates 211 and 213 may also be activated by mechanical treatment such as polishing and chemical treatment such as cleaning. In addition, the substrates 211 and 213 may also be activated by sputter etching using inert gas, ion beam, or high-speed atomic beam. When an ion beam or a high-speed atomic beam is used, the bonding device 300 can be produced under reduced pressure. In addition, the substrates 211 and 213 may also be activated by irradiating ultraviolet rays, an ozone ashing machine, or the like. In addition, for example, a liquid or gas etchant can also be used to chemically purify the surfaces of the substrates 211 and 213 for activation. In addition, multiple types of activation methods can also be used in combination.

此外,亦可將活化裝置326、336設於貼合裝置300之外部,而非內部。此時,亦可在將基板211、213搬入貼合裝置300之前,活化基板211、213之表面,再將活化後之基板211、213搬入貼合裝置300。In addition, the activation devices 326 and 336 may also be provided outside the laminating device 300 instead of inside. At this time, the surfaces of the substrates 211 and 213 may be activated before the substrates 211 and 213 are carried into the bonding apparatus 300, and then the activated substrates 211 and 213 may be carried into the bonding apparatus 300.

在步驟S104中,係以溫度調節基板211、213之至少一方,補償相對於設計規格之倍率差的方式修正基板。亦可將基板211、213之翹曲等的變形,採用溫度調節以外之方法,例如使用設於上載台322或下載台332之致動器使基板211、213之至少一方變形之修正方法。藉此,即使在各別基板211、213上有固有之應變下,仍可精確對準基板211、213。In step S104, the substrate is corrected in such a way that at least one of the temperature-regulated substrates 211 and 213 compensates for the difference in magnification with respect to the design specifications. The warpage of the substrates 211 and 213 may be deformed by methods other than temperature adjustment, for example, a correction method of deforming at least one of the substrates 211 and 213 by using an actuator provided on the loading stage 322 or the downloading stage 332. Thereby, even under the inherent strain on the respective substrates 211, 213, the substrates 211, 213 can still be accurately aligned.

另外,亦可調換活化基板211、213之步驟S103、與溫度調節基板211、213之步驟S104的順序。此外,亦可在檢測基板211、213之各別對位標記的步驟S102之前,進行溫度調節基板211、213之至少一方來修正的步驟S104。In addition, the order of step S103 of activating the substrates 211 and 213 and step S104 of the temperature adjusting substrates 211 and 213 may be exchanged. In addition, before step S102 of detecting the respective alignment marks of the substrates 211 and 213, step S104 of correcting at least one of the temperature-regulating substrates 211 and 213 may be performed.

在步驟S105中,係將貼合之基板211、213相互對準。如圖13D所示,依據事先決定之基板211、213的位置關係,藉由X方向驅動部331及Y方向驅動部333驅動下載台332,而於水平方向定位基板211,讓對位標記間之位置偏差為統計性最小或臨限值以下。此處,採用增強型全局對位(Enhanced Global Alignment)作為統計性對準法即可。In step S105, the bonded substrates 211 and 213 are aligned with each other. As shown in FIG. 13D, according to the predetermined positional relationship of the substrates 211 and 213, the X-direction driving part 331 and the Y-direction driving part 333 drive the download table 332, and the substrate 211 is positioned in the horizontal direction so that the gap between the alignment marks The position deviation is the smallest statistically or below the threshold. Here, the enhanced global alignment (Enhanced Global Alignment) can be used as the statistical alignment method.

在步驟S106中,係將貼合檢測裝置350之複數個電極351配置於基板211、213的側方。如圖13E所示,以使升降驅動部338上升的方式,而將下載台332驅動至上方。藉此,被下載台332所支撐之基板213接近被上載台322所支撐的基板211。在該狀態下,如使用圖8A所說明,藉由電極驅動裝置352將貼合檢測裝置350之複數個電極351降下,就面方向,將基板211、213夾在其間而配置於此等的側方。In step S106, the plurality of electrodes 351 of the bonding detection device 350 are arranged on the sides of the substrates 211 and 213. As shown in FIG. 13E, the download table 332 is driven upward so that the lift drive part 338 is raised. Thereby, the substrate 213 supported by the download station 332 approaches the substrate 211 supported by the upload station 322. In this state, as explained using FIG. 8A, the electrode driving device 352 lowers the plurality of electrodes 351 of the bonding detection device 350, and the substrates 211 and 213 are sandwiched in the surface direction and arranged on these sides. square.

在步驟S107中,係使基板211、213之一部分相互接觸而形成貼合的起點。如圖13F所示,以使升降驅動部338上升的方式,將支撐基板213之下載台332驅動至上方。藉此,如使用圖8B所說明,基板213之中央被按壓至基板211、擠出基板211、213之間所夾住的環境氣體等,基板211、213之各別一部分彼此接觸而形成接觸區域215,並形成貼合的起點。起點亦可係具有面積之區域。In step S107, parts of the substrates 211 and 213 are brought into contact with each other to form a starting point for bonding. As shown in FIG. 13F, the loading table 332 supporting the substrate 213 is driven upward in such a manner that the lifting driving portion 338 is raised. Thereby, as explained using FIG. 8B, the center of the substrate 213 is pressed to the substrate 211, and the ambient gas sandwiched between the substrates 211 and 213 is extruded, and the respective parts of the substrates 211 and 213 are in contact with each other to form a contact area. 215, and form the starting point for bonding. The starting point may also be a region having an area.

藉由該接觸,經活化之基板211、213的接觸區域藉由如氫鍵結之化學鍵結而結合。使基板211、213之一部分接觸後,維持基板211、213相互接觸的狀態。此時,亦可藉由按壓基板211、213彼此,增大已接觸之一部分面積而擴大接觸區域。當維持接觸狀態下經過指定時間時,會於基板211、213之間保有不會讓基板211、213間在基板211、213之貼合過程產生位置偏差之大小的結合力。藉此,在基板211、213互相接觸之一部分形成貼合的起點。By this contact, the contact areas of the activated substrates 211, 213 are bonded by chemical bonding such as hydrogen bonding. After contacting a part of the substrates 211 and 213, the state where the substrates 211 and 213 are in contact with each other is maintained. At this time, the contact area can also be enlarged by pressing the substrates 211 and 213 to increase the area of a part of the contact area. When a specified time elapses while maintaining the contact state, a bonding force is maintained between the substrates 211 and 213 so as not to cause positional deviation between the substrates 211 and 213 during the bonding process of the substrates 211 and 213. Thereby, a starting point for bonding is formed at a portion where the substrates 211 and 213 are in contact with each other.

在步驟S108中,係在基板211、213之間形成接觸區域,調查是否在2個基板210之間保有上述指定大小之結合力。當在該階段檢測出基板211、213已貼合時,調查是否形成了貼合起點,成為基板211、213開始貼合之契機。因此,在步驟107中,調查是否已形成了按壓基板211、213之一部分的區域,或是在接近該區域之位置已形成成為貼合起點的區域。In step S108, a contact area is formed between the substrates 211 and 213, and it is checked whether the above-mentioned predetermined magnitude of bonding force is maintained between the two substrates 210. When it is detected that the substrates 211 and 213 have been bonded at this stage, it is investigated whether a bonding starting point has been formed, which becomes an opportunity for the substrates 211 and 213 to start bonding. Therefore, in step 107, it is investigated whether an area that presses a part of the substrates 211 and 213 has been formed, or an area that becomes a starting point for bonding has been formed at a position close to the area.

在判斷為基板210上已形成貼合起點時,亦即,判斷為在2個基板211、213接觸的一部分之間保有了上述指定大小之結合力時,進入下一個步驟S109。在尚未確認基板211、213上已形成起點時,繼續保持基板211、213兩者,並且持續按壓基板211、213之一部分,來形成貼合起點。When it is judged that the bonding starting point has been formed on the substrate 210, that is, when it is judged that the predetermined magnitude of the bonding force is maintained between the contacting parts of the two substrates 211 and 213, the process proceeds to the next step S109. When it has not been confirmed that the starting point has been formed on the substrates 211 and 213, both the substrates 211 and 213 are maintained, and a part of the substrates 211 and 213 is continuously pressed to form the bonding starting point.

在步驟S109中,係解除基板211藉由固持器221之保持。藉此,釋放基板211、如使用圖8C所說明,藉由基板211、213間之分子間力,鄰接於接觸區域之區域自動地吸附,而產生接觸區域於面方向依序擴大的接合波,藉此,使基板211產生應變並接合基板211、213。In step S109, the holding of the substrate 211 by the holder 221 is released. As a result, the substrate 211 is released. As described with reference to FIG. 8C, the area adjacent to the contact area is automatically adsorbed by the intermolecular force between the substrates 211 and 213, resulting in a bonding wave in which the contact area expands sequentially in the surface direction. As a result, the substrate 211 is strained and the substrates 211 and 213 are bonded.

另外,所謂基板211、213之接合,係指將基板211、213之主面彼此平行地重疊,彼此之相對位置藉由氫鍵結、凡得瓦鍵結、共價鍵結等而固定。另一方面,所謂重疊基板211、213,雖係指形成將基板211、213之主面彼此接觸的狀態,但不限於指彼此相對位置已固定之狀態。此外,有時會使用「積層」而與「重疊」同義。另外,基板211、213雖有時會在經積層之地點開始接合,但也會有在接合進行中從接合區域(本實施形態係在上載台322正下方區域)搬出,並在與經對準之地點不同之地點接合完成。此外,也會有在與對準地點以外的地點藉由加熱、加壓等而接合基板211、213。In addition, the so-called bonding of the substrates 211 and 213 means that the main surfaces of the substrates 211 and 213 are superimposed parallel to each other, and their relative positions are fixed by hydrogen bonding, Van der Waals bonding, covalent bonding, and the like. On the other hand, the so-called overlapping substrates 211 and 213 refer to a state where the main surfaces of the substrates 211 and 213 are in contact with each other, but it is not limited to a state where the relative positions of the substrates 211 and 213 are fixed. In addition, sometimes "stacked" is used and synonymous with "overlap". In addition, although the substrates 211 and 213 may start to be joined at the place where they are laminated, they may also be carried out from the joining area (in this embodiment, the area directly under the upper stage 322) during the joining process, and are aligned with the substrate. The location of different locations is joined together. In addition, there are cases where the substrates 211 and 213 are bonded by heating, pressing, or the like at a location other than the alignment location.

在步驟S110中,係使用貼合檢測裝置350判斷接觸區域之狀態。例如可檢測圖4A所示的配置之複數個電極對351A~351E的各別靜電特性,藉由判斷部150a如使用圖9A至圖10C所說明,由各別靜電特性之檢測結果的時間變化判斷接觸區域之狀態。In step S110, the bonding detection device 350 is used to determine the state of the contact area. For example, it is possible to detect the respective electrostatic characteristics of a plurality of electrode pairs 351A to 351E in the configuration shown in FIG. 4A. The determination unit 150a is used to determine the time change of the detection results of the respective electrostatic characteristics as explained using FIGS. 9A to 10C. The state of the contact area.

步驟S111係調查基板211、213之接觸區域是否正從形成於基板211、213之貼合起點擴大。在已能確認基板211、213之接觸區域正在擴大時,判斷部150a判斷為基板211、213正進行貼合,並進入下一個步驟S112,不能確認時,判斷部150a判斷為基板211、213之貼合因某種原因受阻,並進入步驟S114。Step S111 is to investigate whether the contact area of the substrates 211, 213 is expanding from the starting point of bonding formed on the substrates 211, 213. When it has been confirmed that the contact area of the substrates 211 and 213 is expanding, the judgment unit 150a judges that the substrates 211 and 213 are being bonded, and proceeds to the next step S112. When it cannot be confirmed, the judgment unit 150a judges that the substrates 211 and 213 are The bonding is blocked for some reason, and the process proceeds to step S114.

此處,亦可依據複數個電極對351A~351E之靜電特性的檢測結果來控制基板211、213間的斜度。例如,由圖4A所示之配置的複數個電極對351A~351E之各別靜電特性的檢測結果,電極對351A之靜電特性依時間之變化相對於其他電極對351B~351E之靜電特性依時間的變化提早或延遲時,判斷部150a判斷為接觸區域之擴大的進行發生不均,接觸區域往該方向之擴大相對於往其他方向之擴大提早或延遲。控制部150b依據判斷部150a之判斷控制下載台332,更為增大或縮小基板213相對於基板211之左方的斜度。藉此,可一致地擴大接觸區域215。Here, the inclination between the substrates 211 and 213 can also be controlled based on the detection results of the electrostatic characteristics of the plurality of electrode pairs 351A to 351E. For example, from the detection results of the respective electrostatic characteristics of the plurality of electrode pairs 351A to 351E in the configuration shown in FIG. 4A, the change in the electrostatic characteristics of the electrode pair 351A with time is relative to the electrostatic characteristics of the other electrode pairs 351B to 351E. When the change is early or delayed, the determining unit 150a determines that the progress of the expansion of the contact area is uneven, and the expansion of the contact area in this direction is earlier or delayed compared to the expansion in other directions. The control unit 150b controls the download station 332 according to the judgment of the judgment unit 150a to further increase or decrease the slope of the substrate 213 relative to the left of the substrate 211. Thereby, the contact area 215 can be expanded uniformly.

另外,在上載台322及下載台332之至少一方設有使基板211、213機械性變形的致動器時,控制部150b亦可依據判斷部150a之判斷控制致動器之驅動量,來調整基板211、213之變形量。此外,在上載台322及下載台332之至少一方設有溫度調節基板211、213的加熱器等時,控制部150b亦可依據判斷部150a之判斷,控制加熱器之溫度調整量,來調整基板211、213之變形量。此外,在上載台322中設置在厚度方向貫穿之通氣孔,也在保持基板211之固持器221中設置連通的通氣孔,當構成為將乾燥空氣、不活潑氣體等流體從貼合裝置300外面之槽經由上載台322及固持器221之通氣孔噴射至基板211時,控制部150b亦可依據判斷部150a之判斷,調整與接觸區域之擴大緩慢區域或加快區域對應之來自通氣孔之流量及流體壓。此外,亦可將固持器221之保持面沿著徑方向及周方向之至少一方方向分割成複數個分區,按分區可控制真空吸附或靜電吸附之吸附力。此時,亦可相應於擴大區域之擴大的速度,按分區控制從固持器221釋放基板211的時間點。如此,可不一致地解除基板211藉由固持器221之保持時,控制部150b亦可依據判斷部150a之判斷進行控制,將與接觸區域中擴大緩慢的區域對應之分區所為的吸附,在比與擴大加快區域對應之分區所為的吸附解除更早的時間點進行解除。此外,亦可將固持器223之保持面沿著徑方向及周方向之至少一方方向分割成複數個分區,而可按分區控制真空吸附或靜電吸附之吸附力,並相應於接觸區域之擴大速度,按分區控制接觸區域之擴大的進行。如此,在可不一致地解除由固持器223所為之基板213之保持時,控制部150b亦可依據判斷部150a之判斷進行控制,將與接觸區域之擴大緩慢的區域對應之分區的吸附力,比與擴大加快的區域對應之分區的吸附力還弱。此外,亦可藉由升降驅動部338將支撐基板213之下載台332驅動至上方或下方,來調整基板211、213間之間隙。In addition, when at least one of the upper stage 322 and the download stage 332 is provided with an actuator that mechanically deforms the substrates 211 and 213, the control unit 150b can also control the driving amount of the actuator according to the judgment of the judgment unit 150a to adjust The amount of deformation of the substrates 211 and 213. In addition, when at least one of the upper stage 322 and the download stage 332 is provided with heaters for the temperature adjustment substrates 211 and 213, the control unit 150b may also control the temperature adjustment amount of the heater based on the judgment of the judgment unit 150a to adjust the substrate The amount of deformation of 211 and 213. In addition, the upper stage 322 is provided with a vent hole penetrating in the thickness direction, and a communicating vent hole is also provided in the holder 221 holding the substrate 211. When the structure is configured to pass fluids such as dry air and inert gas from the outside of the laminating device 300 When the grooves are sprayed to the substrate 211 through the vent holes of the upper stage 322 and the holder 221, the control section 150b can also adjust the flow rate from the vent holes corresponding to the slow or accelerated area of the contact area according to the judgment of the judgment section 150a. Fluid pressure. In addition, the holding surface of the holder 221 can also be divided into a plurality of partitions along at least one of the radial direction and the circumferential direction, and the suction force of vacuum adsorption or electrostatic adsorption can be controlled according to the partitions. At this time, it is also possible to control the time point of releasing the substrate 211 from the holder 221 in accordance with the speed of the expansion of the expansion area according to the zone. In this way, when the holding of the substrate 211 by the holder 221 can be released inconsistently, the control unit 150b can also control according to the judgment of the judgment unit 150a to absorb the suction of the partition corresponding to the slow expansion area in the contact area. The adsorption release of the partition corresponding to the expanded acceleration area is released at an earlier time. In addition, the holding surface of the holder 223 can also be divided into a plurality of partitions along at least one of the radial direction and the circumferential direction, and the suction force of vacuum adsorption or electrostatic adsorption can be controlled according to the partitions, and corresponding to the expansion speed of the contact area , Control the expansion of the contact area by zone. In this way, when the holding of the substrate 213 by the holder 223 can be released inconsistently, the control part 150b can also control according to the judgment of the judgment part 150a, and the adsorption force of the partition corresponding to the slow expansion area of the contact area is lower than The adsorption force of the partition corresponding to the accelerated expansion area is still weak. In addition, it is also possible to adjust the gap between the substrates 211 and 213 by driving the download table 332 supporting the substrate 213 to the upper or lower side by the lifting driving part 338.

另外,當接觸區域之擴大速度比預定的速度快時,控制部150b即使在基板211、213之貼合工序中,仍可修正基板211、213之接觸區域的擴大速度之控制、倍率非線形修正之控制。例如,只須藉由基板之個體差異、環境等之變化,檢知在貼合工序中產生之倍率與預定不同,並將其修正即可。預定之速度可依據之前在基板貼合中獲得之接觸區域的擴大速度之檢測結果來設定。依據同種基板等之資料預先掌握基板貼合工序中產生之倍率(非線形)與接觸區域之擴大速度的關係。以基板貼合工序中當會產生之倍率(非線形)與之前經貼合的基板相同的方式,設定擴大速度。另外,當要預測在環境要素等下倍率變動及接觸區域之擴大速度的變化時,也會預測彼等來設定預定速度。In addition, when the expansion speed of the contact area is faster than the predetermined speed, the control unit 150b can correct the control of the expansion speed of the contact area of the substrates 211 and 213 and the magnification non-linear correction even during the bonding process of the substrates 211 and 213. control. For example, it is only necessary to detect that the magnification generated in the bonding process is different from the predetermined one by the individual differences of the substrate and the changes in the environment, and then correct it. The predetermined speed can be set according to the detection result of the expansion speed of the contact area obtained in the substrate bonding. The relationship between the magnification (non-linear) generated in the substrate bonding process and the expansion speed of the contact area is grasped in advance based on the data of the same type of substrate. Set the expansion speed in the same way that the magnification (non-linear) that occurs during the substrate bonding process is the same as that of the previously bonded substrate. In addition, when it is necessary to predict changes in the magnification rate and the expansion speed of the contact area under environmental factors, etc., they will also be predicted to set the predetermined speed.

亦可即時實施控制部150b對該下載台332之控制,亦可在下一個基板貼合時進行。此外,亦可每批基板、每當變更貼合處理方案時實施。The control unit 150b can also control the download station 332 immediately, or when the next substrate is attached. In addition, it can also be implemented for each batch of substrates and whenever the bonding treatment plan is changed.

另外,在步驟S111中,判斷部150a亦可進一步藉由檢測基板211、213之接觸區域215的擴大速度或擴大程度,預測基板211、213之貼合完成的時間。接觸區域215之擴大速度或擴大程度例如可從圖9C、圖9D、及圖10C所示之2個電極351間的靜電特性隨時間變化的形貌算出。In addition, in step S111, the judging unit 150a may further detect the expansion speed or degree of expansion of the contact area 215 of the substrates 211, 213 to predict the time for the completion of the bonding of the substrates 211, 213. The expansion speed or degree of expansion of the contact area 215 can be calculated, for example, from the topography of the electrostatic characteristics between the two electrodes 351 shown in FIG. 9C, FIG. 9D, and FIG. 10C over time.

此外,亦可從圖5A或圖6A所示之配置的複數個電極對351A~351D之各別靜電特性的檢測結果,就各方向檢測接觸區域擴大之速度或擴大程度,來檢測接觸區域215之形狀。接觸區域215之形狀會伴隨其擴大一起改變。因此,當接觸區域215維持圓形時,判斷部150a判斷為基板211、213之貼合係正常地進行者,並進入下一個步驟S112,從圓形偏離變大而無法維持圓形時,判斷部150a判斷為基板211、213之貼合並未正常地進行,並進入步驟S114。In addition, the detection results of the respective electrostatic characteristics of the plurality of electrode pairs 351A to 351D in the configuration shown in FIG. 5A or FIG. shape. The shape of the contact area 215 changes along with its expansion. Therefore, when the contact area 215 maintains a circular shape, the judgment unit 150a judges that the bonding of the substrates 211 and 213 is normally performed, and proceeds to the next step S112. When the deviation from the circular shape becomes large and the circular shape cannot be maintained, it is judged The part 150a judges that the bonding of the substrates 211 and 213 has not been performed normally, and proceeds to step S114.

步驟S112中,係調查基板211、213之貼合是否已完成。判斷部150a藉由複數個電極對351A~351E之各別靜電特性隨時間的變化消失而飽和成一定值,可確認貼合完成。此處,如使用圖9C、圖9D、及圖10C之說明,電極對351A~351E之各別所含的2個電極351a~351e間之靜電電容的檢測結果從C1 增大,經過變化極小之一定期間而飽和成C2 。於此,判斷部150a亦可當靜電電容之檢測結果開始變化,經過比一定期間長之遮罩期間後,靜電電容之檢測結果收斂在|C2 |或|C2 -C1 |之一定比率的範圍內而變成與C2 之差在臨限值以下時,確認貼合完成。藉此,即使每個基板211、213貼合所需要的時間不同時,仍可確實確認貼合完成。另外,超過預定之臨限值時間而仍無法確認基板211、213之貼合完成時,判斷部150a可判斷為無法確認基板貼合完成。確認了基板貼合完成時,進入下一個步驟S113,無法確認時,進入步驟S114。In step S112, it is checked whether the bonding of the substrates 211 and 213 has been completed. The judgment unit 150a can confirm that the bonding is completed by disappearing the respective electrostatic characteristics of the plurality of electrode pairs 351A to 351E over time and saturating to a certain value. Here, as the use of 9C, the to Figure 9D, the description and 10C, two electrode pairs 351A ~ 351E of the respective detection results contained between 351a ~ 351e of the capacitance increases from C 1, through minimal changes It saturates into C 2 for a certain period of time. Here, the judging unit 150a may also when the detection result of the electrostatic capacitance begins to change, after a mask period longer than a certain period, the detection result of the electrostatic capacitance converges to a certain ratio of |C 2 | or |C 2 -C 1 | When the difference with C 2 is below the threshold value within the range of, confirm that the bonding is completed. Thereby, even if the time required for the bonding of the substrates 211 and 213 is different, the completion of the bonding can be confirmed surely. In addition, when the completion of the bonding of the substrates 211 and 213 cannot be confirmed after the predetermined threshold time is exceeded, the determination unit 150a may determine that the completion of the bonding of the substrates cannot be confirmed. When it is confirmed that the substrate bonding is completed, the process proceeds to the next step S113, and if it cannot be confirmed, the process proceeds to step S114.

步驟S113中,係搬出貼合基板211、213而形成的貼合基板230。如圖13G所示,藉由電極驅動裝置352上升複數個電極351,並退至上載台322側方,結束對基板211、213之溫度控制等,並藉由升降驅動部338降下下載台332,藉由搬送裝置140從貼合裝置300搬出貼合基板230。貼合基板230從固持器221、223分離,並收容於基板匣盒130。In step S113, the bonded substrate 230 formed by bonding the substrates 211 and 213 is carried out. As shown in FIG. 13G, a plurality of electrodes 351 are raised by the electrode driving device 352 and retracted to the side of the upper stage 322, the temperature control of the substrates 211 and 213, etc. are ended, and the download stage 332 is lowered by the raising and lowering driving part 338. The bonding substrate 230 is carried out from the bonding apparatus 300 by the conveying device 140. The bonded substrate 230 is separated from the holders 221 and 223 and is contained in the substrate cassette 130.

步驟S114中,係執行停止貼合裝置300之動作、對外部發佈警報、從貼合裝置300搬出貼合中之基板211、213等的對應。In step S114, the operation of stopping the bonding apparatus 300, issuing an alarm to the outside, and carrying out the bonding apparatus 300 of the substrates 211, 213, and the like are performed.

藉此,基板211、213之基板貼合步驟完成。Thereby, the substrate bonding step of the substrates 211 and 213 is completed.

本實施形態之基板貼合裝置300係在基板211、213之間形成各別一部分彼此接觸的接觸區域215,以使接觸區域215在沿著貼合面之面方向擴大的方式來直接貼合基板211、213的裝置,且具備:就面方向將基板211、213夾於其間而配置之至少一對電極351;及檢測至少一對電極351中所包含之2個電極間的靜電特性之檢測部353。在基板211、213之間使各別一部分接觸而形成接觸區域215,在使接觸區域215於面方向擴大之際,藉由檢測部353,以檢測就面方向將基板211、213夾於其間而配置之至少一對電極351的靜電特性的方式,可檢測接觸區域215之狀態,亦即基板211、213之貼合過程。In the substrate bonding apparatus 300 of this embodiment, a contact area 215 is formed between the substrates 211 and 213, respectively, in which a part of the contact area 215 is in contact with each other, so that the contact area 215 is expanded in the direction along the bonding surface to directly bond the substrate The device of 211 and 213, and includes: at least a pair of electrodes 351 arranged with the substrates 211 and 213 sandwiched therebetween in the plane direction; 353. A contact area 215 is formed by contacting a part of each of the substrates 211 and 213. When the contact area 215 is expanded in the surface direction, the detection unit 353 detects the surface direction by sandwiching the substrates 211 and 213 therebetween. The electrostatic characteristics of the at least one pair of electrodes 351 can be configured to detect the state of the contact area 215, that is, the bonding process of the substrates 211 and 213.

本實施形態之基板貼合方法係在基板211、213之間形成各別一部分彼此接觸的接觸區域215,以使接觸區域215在沿著貼合面之面方向擴大的方式來直接貼合基板211、213的方法,且包含:就面方向將基板211、213夾於其間而配置至少一對電極351的階段;在基板211、213之間形成各別一部分彼此接觸的接觸區域215的階段;及使接觸區域215在沿著貼合面之面方向擴大,並且檢測至少一對電極351中包含之2個電極間的靜電特性的階段。在基板211、213之間使各別一部分接觸而形成接觸區域215,在使接觸區域215在面方向擴大之際,以檢測就面方向將基板211、213夾於其間而配置之至少一對電極351的靜電特性的方式,可檢測接觸區域215之狀態,亦即基板211、213之貼合過程。In the substrate bonding method of this embodiment, a contact area 215 is formed between the substrates 211 and 213, each of which is in contact with each other, and the substrate 211 is directly bonded to the substrate 211 so that the contact area 215 expands in the direction along the bonding surface. The method of 213, and includes: a stage of arranging at least a pair of electrodes 351 with the substrates 211 and 213 sandwiched therebetween in the plane direction; The contact area 215 is expanded in the surface direction along the bonding surface, and the electrostatic characteristics between the two electrodes included in the at least one pair of electrodes 351 are detected. A contact area 215 is formed by contacting a part of each of the substrates 211 and 213. When the contact area 215 is expanded in the surface direction, at least a pair of electrodes are arranged by sandwiching the substrates 211 and 213 in the surface direction. The electrostatic characteristics of the 351 can detect the state of the contact area 215, that is, the bonding process of the substrates 211 and 213.

另外,本實施形態之貼合裝置300中,係採用經由固持器221、223而將基板211、213保持於上載台322及下載台332的構成,但取而代之,亦可採用不使用固持器221、223,而直接將基板211、213保持於上載台322及下載台332的構成。此時,將上載台322之保持面形成中央側高,而周緣低的彎曲形狀即可。基板211吸附保持於上載台322之保持面,與保持面密合彎曲成中央側突出的凸狀,並維持其形狀。In addition, in the bonding apparatus 300 of this embodiment, the substrates 211, 213 are held on the loading table 322 and the downloading table 332 via the holders 221, 223. However, instead of using the holders 221, 223, 223, and directly hold the substrates 211 and 213 on the loading station 322 and the download station 332. At this time, it is sufficient to form the holding surface of the upper stage 322 into a curved shape with a high central side and a low peripheral edge. The substrate 211 is sucked and held on the holding surface of the upper stage 322, and is curved into a convex shape protruding from the center side in close contact with the holding surface, and maintains its shape.

本實施形態之貼合裝置300中,為了藉由貼合檢測裝置350檢測基板211、213之接觸區域215的擴大之進行狀態,而如圖9A及圖9B或圖10A及圖10B所示地配置電極351,但為了僅檢測接觸區域215之擴大結束,亦可配置電極351。圖14A及圖14B顯示電極配置之變化例與基板之位移檢測的原理。In the bonding apparatus 300 of this embodiment, in order to detect the progress state of the expansion of the contact area 215 of the substrates 211 and 213 by the bonding detection device 350, it is arranged as shown in FIGS. 9A and 9B or FIGS. 10A and 10B The electrode 351, but in order to only detect the end of the expansion of the contact area 215, the electrode 351 may be arranged. 14A and 14B show a variation of the electrode configuration and the principle of displacement detection of the substrate.

圖14A所示之變化例中,係一對電極351中之至少一方,關於Z軸方向係配置於與基板213貼合後之基板211的背面側。藉此,在基板211、213之接觸區域的擴大進行中,因為基板211之端面與電極351相對,可從電極351檢測基板211之靜電電容,對此當基板211、213之接觸區域的擴大進行至基板211、213之端部而結束時,因為基板211之端面不與電極351相對,由電極351檢測不出基板211之靜電電容,而檢測出環境氣體之靜電電容。因此,判斷部150a由電極351間之靜電特性的檢測結果檢測出環境氣體之靜電電容時,可判斷為接觸區域215之擴大結束,亦即基板之貼合完成。In the modified example shown in FIG. 14A, at least one of the pair of electrodes 351 is arranged on the back side of the substrate 211 after being bonded to the substrate 213 with respect to the Z-axis direction. As a result, the expansion of the contact area of the substrates 211 and 213 is in progress. Because the end face of the substrate 211 is opposed to the electrode 351, the electrostatic capacitance of the substrate 211 can be detected from the electrode 351. When the end of the substrate 211, 213 ends, because the end surface of the substrate 211 does not face the electrode 351, the electrode 351 cannot detect the electrostatic capacitance of the substrate 211, but the electrostatic capacitance of the ambient gas. Therefore, when the judging unit 150a detects the electrostatic capacitance of the ambient gas from the result of detecting the electrostatic characteristics between the electrodes 351, it can be judged that the expansion of the contact area 215 is completed, that is, the bonding of the substrate is completed.

圖14B所示之變化例中,係一對電極351中之至少一方,關於Z軸方向係配置於與基板213貼合後之基板211的端面相對之位置。藉此,在基板211、213之接觸區域的擴大進行中,因為基板211之端面不與電極351相對,所以由電極351係檢測出基板211及環境氣體混合之靜電電容,對此當基板211、213之接觸區域的擴大進行至基板211、213之端部而結束時,因為基板211之端面與電極351相對,所以由電極351會檢測出基板211之靜電電容。因此,當判斷部150a從電極351間之靜電特性的檢測結果檢測出基板211之靜電電容時,可判斷為接觸區域215之擴大結束,亦即基板之貼合完成。In the modified example shown in FIG. 14B, at least one of the pair of electrodes 351 is arranged at a position opposite to the end surface of the substrate 211 after the substrate 213 is bonded with respect to the Z-axis direction. As a result, during the expansion of the contact area of the substrates 211 and 213, since the end surface of the substrate 211 is not opposed to the electrode 351, the electrode 351 detects the electrostatic capacitance of the substrate 211 and the ambient gas mixture. This is regarded as the substrate 211, When the expansion of the contact area of 213 proceeds to the ends of the substrates 211 and 213 and ends, since the end surface of the substrate 211 faces the electrode 351, the electrode 351 detects the electrostatic capacitance of the substrate 211. Therefore, when the judging unit 150a detects the electrostatic capacitance of the substrate 211 from the detection result of the electrostatic characteristics between the electrodes 351, it can be judged that the expansion of the contact area 215 is completed, that is, the bonding of the substrate is completed.

本實施形態中,係將貼合檢測裝置350之複數個電極351與基板211、213之端面相對而配置於此等的側方。當將複數個電極351與基板211、213之表面相對來檢測此等之靜電特性時,由於形成於基板211、213表面之氧化膜靜電特性會按每個基板或相同基板上之每個位置而改變,就全部基板或是就單一基板之全部位置使用複數個電極351統一地檢測基板211、213之接觸區域的擴大係有困難。對此,將複數個電極351與基板211、213之端面相對時,因為基板211、213表面之氧化膜幾乎不影響靜電特性,所以可就全部基板或是就單一基板之全部位置使用複數個電極351統一地檢測基板211、213之接觸區域的擴大。In this embodiment, the plurality of electrodes 351 of the bonding detection device 350 are arranged on the sides of the end faces of the substrates 211 and 213 facing each other. When a plurality of electrodes 351 are opposed to the surfaces of the substrates 211 and 213 to detect these electrostatic characteristics, the electrostatic characteristics of the oxide films formed on the surfaces of the substrates 211 and 213 will vary for each substrate or each position on the same substrate. With the change, it is difficult to uniformly detect the expansion of the contact area of the substrates 211 and 213 using a plurality of electrodes 351 for all substrates or for all positions of a single substrate. In this regard, when a plurality of electrodes 351 are opposed to the end faces of the substrates 211 and 213, since the oxide film on the surfaces of the substrates 211 and 213 hardly affects the electrostatic characteristics, a plurality of electrodes can be used for all the substrates or for all positions of a single substrate 351 uniformly detects the expansion of the contact area of the substrates 211 and 213.

另外,本實施形態中,亦可共有貼合檢測裝置350之複數個電極對351A~351E的各別所包含之2個電極351a~351e中之一方電極。此時,貼合檢測裝置350係設置:轉動共有電極而改變其方向,讓其與複數個電極對351A~351E之各別包含的2個電極351a~351e中之另一方電極相對的轉動機構;及將藉由轉動機構使共有電極與複數個電極對351A~351E中之任何一個包含的2個電極351a~351e之另一方電極相對的同時,將成對之電極351a~351e連接於檢測部353的選擇器。藉此,可配置複數個電極對351A~351E而不會干擾。In addition, in this embodiment, one of the two electrodes 351a to 351e included in each of the plurality of electrode pairs 351A to 351E of the bonding detection device 350 may be shared. At this time, the bonding detection device 350 is provided with a rotating mechanism that rotates the common electrode to change its direction so that it is opposed to the other electrode of the two electrodes 351a to 351e included in the plurality of electrode pairs 351A to 351E; And while the common electrode is opposed to the other electrode of the two electrodes 351a to 351e included in any one of the plurality of electrode pairs 351A to 351E by a rotating mechanism, the pair of electrodes 351a to 351e are connected to the detection unit 353 Selector. Thereby, a plurality of electrode pairs 351A-351E can be arranged without interference.

另外,本實施形態之貼合檢測裝置350中,係使基板211、213之中央相互接觸而形成成為貼合起點的接觸區域215,但貼合起點不限於基板211、213之中央,亦可係任意位置,例如基板211、213之緣部。In addition, in the bonding detection device 350 of this embodiment, the centers of the substrates 211 and 213 are brought into contact with each other to form a contact area 215 that becomes the starting point for bonding. However, the starting point for bonding is not limited to the center of the substrates 211 and 213, and may be Any position, such as the edges of the substrates 211 and 213.

本實施形態之貼合檢測裝置350中,係將複數個電極351中包含之2個電極,就面方向將基板211、213不接觸地夾於其間而配置,但亦可取代其或與其組合,就基板211、213重疊之方向將此等夾於其間而配置。In the bonding detection device 350 of this embodiment, the two electrodes included in the plurality of electrodes 351 are arranged by sandwiching the substrates 211 and 213 without contact in the surface direction, but they can be replaced or combined with them. The substrates 211 and 213 are sandwiched and arranged in the direction in which they overlap.

圖15A及圖15B分別概略顯示從上面及側面觀看第一變化例之貼合檢測裝置350A的構成。此處,圖15B係關於圖15A中之基準線BB的剖面圖。另外,圖15A中省略了固持器221及上載台322。圖15B中省略了固持器221、223。貼合檢測裝置350A包含電極對351A,其中包含之2個電極351a各別設於上載台322之下面中央及下載台332的上面中央。以檢測電極對351A之靜電特性的ㄈ上,可檢知在各別保持於上載台322及下載台332之基板211、213的中央是否形成有成為貼合起點之接觸區域215。15A and 15B schematically show the configuration of the bonding detection device 350A of the first modification as viewed from the top and side, respectively. Here, FIG. 15B is a cross-sectional view about the reference line BB in FIG. 15A. In addition, the holder 221 and the upper stage 322 are omitted in FIG. 15A. The holders 221 and 223 are omitted in FIG. 15B. The bonding detection device 350A includes an electrode pair 351A, and two electrodes 351a included therein are respectively arranged at the center of the lower surface of the loading platform 322 and the center of the upper surface of the downloading platform 332. By detecting the electrostatic characteristics of the electrode pair 351A, it can be detected whether the center of the substrates 211 and 213 respectively held on the upper stage 322 and the download stage 332 is formed with a contact area 215 serving as a starting point for bonding.

圖16A及圖16B分別概略顯示從上面及側面觀看第二變化例之貼合檢測裝置350B的構成。此處,圖16B係關於圖16A中之基準線BB的剖面圖。另外,圖16A中省略了固持器221及上載台322。圖16B中省略了固持器221、223。貼合檢測裝置350B包含複數個電極對351B~351E。各別電極對351B~351E所包含之2個電極351b~351e的一方設於上載台322之下面上的4處緣部,另一方設於下載台332之上面上的4處緣部。以檢測各電極對351B~351E之靜電特性的方式,在各別上載台322及下載台332所保持之基板211、213的4處緣部,可檢測基板211、213之間所形成的接觸區域215之擴大過程、及貼合結束。16A and 16B schematically show the configuration of the bonding detection device 350B of the second modification example viewed from the top and the side, respectively. Here, FIG. 16B is a cross-sectional view about the reference line BB in FIG. 16A. In addition, the holder 221 and the upper stage 322 are omitted in FIG. 16A. The holders 221 and 223 are omitted in FIG. 16B. The bonding detection device 350B includes a plurality of electrode pairs 351B to 351E. One of the two electrodes 351b to 351e included in the respective electrode pairs 351B to 351E is provided on the four edges of the lower surface of the upper stage 322, and the other is provided on the four edges of the upper surface of the download stage 332. By detecting the electrostatic characteristics of each electrode pair 351B to 351E, the four edges of the substrates 211 and 213 held by the respective upper stage 322 and the download stage 332 can be used to detect the contact area formed between the substrates 211 and 213 The enlargement process of 215 and the bonding are over.

另外,圖15B及圖16B所示之例係顯示在各別上載台322及下載台332設有1個電極對351A或複數個電極對351B~351E之例,但在使用固持器221、223情況下,亦可在固持器221、223上設置1個電極對351A或複數個電極對351B~351E。In addition, the examples shown in FIGS. 15B and 16B show an example in which one electrode pair 351A or a plurality of electrode pairs 351B to 351E are provided on the respective uploading station 322 and the downloading station 332, but when the holders 221, 223 are used Next, one electrode pair 351A or a plurality of electrode pairs 351B-351E may also be provided on the holders 221 and 223.

以上,係使用實施形態說明本發明,不過,本發明之技術性範圍不限定於上述實施形態記載之範圍。熟悉本技術之業者明瞭上述實施形態可施加多種變更或改良。從申請專利範圍之記載明瞭施加此種變更或改良之形態亦可包含於本發明之技術性範圍。Above, the present invention has been explained using the embodiments, but the technical scope of the present invention is not limited to the scope described in the above embodiments. Those skilled in the art understand that various changes or improvements can be added to the above-mentioned embodiment. It is clear from the description of the scope of the patent application that the form of adding such changes or improvements may also be included in the technical scope of the present invention.

請注意在申請專利範圍、說明書、及圖式中顯示之裝置、系統、程式、及方法中的動作、程序、步驟、及階段等各種處理之執行順序,只要事先不特別明示為「更早」、「事先」等,或是只要並非將前面處理之輸出用在後面的處理,則可以任意順序實現。關於申請專利範圍、說明書、及圖式中之動作流程,即使權宜上使用「首先」、「其次」等作說明,並無必須按照該順序實施之意。Please pay attention to the execution order of various processes such as actions, procedures, steps, and stages in the device, system, program, and method shown in the scope of patent application, specification, and drawings, as long as it is not specifically stated as "earlier" in advance , "In advance", etc., or as long as the output of the previous processing is not used in the subsequent processing, it can be implemented in any order. Regarding the scope of patent application, the description, and the flow of action in the drawings, even if the expedient use "first", "second", etc. for explanation, it does not necessarily mean that they must be implemented in this order.

100:基板貼合系統 110:框體 120、130:基板匣盒 140:搬送裝置 150:控制裝置 150a:判斷部 150b:控制部 210、211、213:基板 212:劃線 214:凹槽 215:接觸區域 216:電路區域 218:對位標記 220、221,223:固持器 222、224:保持面 230:貼合基板 232:接合波 300:貼合裝置 310:框體 312:底板 314:支柱 316:頂板 322:上載台 324、334:顯微鏡 326、336:活化裝置 331:X方向驅動部 332:下載台 333:Y方向驅動部 336:活化裝置 338:升降驅動部 341:干涉儀 350,350A,350B:貼合檢測裝置 351:電極 351A~351H:電極對 351a~351h:電極 352:電極驅動裝置 353、353a~353e:檢測部 354:選擇器 355,356,357:導件 400:固持器暫存箱 500:預對位器100: Substrate bonding system 110: Frame 120, 130: substrate cassette 140: Conveying device 150: control device 150a: Judgment Department 150b: Control Department 210, 211, 213: substrate 212: underline 214: Groove 215: contact area 216: circuit area 218: Counterpoint Mark 220, 221, 223: Holder 222, 224: Keep the face 230: Laminated substrate 232: Conjugation Wave 300: Fitting device 310: Frame 312: Floor 314: Pillar 316: top plate 322: upload platform 324, 334: Microscope 326, 336: Activation Device 331: X direction drive unit 332: download station 333: Y direction drive unit 336: Activating Device 338: Lifting drive 341: Interferometer 350, 350A, 350B: bonding detection device 351: Electrode 351A~351H: Electrode pair 351a~351h: Electrode 352: Electrode drive device 353, 353a~353e: Detection section 354: selector 355, 356, 357: guide 400: Holder temporary storage box 500: Pre-register

圖1概略顯示基板貼合系統之構成。 圖2顯示藉由基板貼合系統而貼合之基板的表面構成。 圖3概略顯示貼合裝置之構成。 圖4A概略顯示貼合檢測裝置之構成。 圖4B概略顯示貼合檢測裝置之另一構成。 圖5A顯示配置電極對之一例。 圖5B顯示對於圖5A之配置電極對的變化例。 圖6A顯示配置電極對之另一例。 圖6B顯示對於圖6A之配置電極對的變化例。 圖7A概略顯示保持基板之固持器的剖面構成。 圖7B概略顯示保持基板之另外固持器的剖面構成。 圖8A顯示在基板貼合工序中之基板的狀態(2個基板經對準之狀態)。 圖8B顯示在基板貼合工序中之基板的狀態(形成了接觸區域之狀態)。 圖8C顯示在基板貼合工序中之基板的狀態(接合波進行中之狀態)。 圖8D顯示在基板貼合工序中之基板的狀態(貼合已結束之狀態)。 圖9A顯示電極形狀與檢測基板位移之原理。 圖9B顯示電極形狀與檢測基板位移之原理。 圖9C顯示在基板貼合工序中基板位移檢測的結果之一例。 圖9D顯示在基板貼合工序中基板位移檢測的結果之另一例。 圖10A顯示電極形狀與基板位移檢測之另一原理。 圖10B顯示電極形狀與基板位移檢測之另一原理。 圖10C顯示在基板貼合工序中檢測基板位移結果之一例。 圖11A顯示變化例之電極形狀與基板位移檢測之原理。 圖11B顯示變化例之電極形狀與基板位移檢測之原理。 圖12顯示基板貼合步驟之流程。 圖13A顯示貼合裝置中之基板貼合步驟的一個工序(搬入基板)。 圖13B顯示貼合裝置中之基板貼合步驟的一個工序(檢測對位標記)。 圖13C顯示貼合裝置中之基板貼合步驟的一個工序(活化基板表面)。 圖13D顯示貼合裝置中之基板貼合步驟的一個工序(對準基板)。 圖13E顯示貼合裝置中之基板貼合步驟的一個工序(配置電極對)。 圖13F顯示貼合裝置中之基板貼合步驟的一個工序(形成貼合起點)。 圖13G顯示貼合裝置中之基板貼合步驟的一個工序(搬出貼合基板)。 圖14A顯示配置電極之變化例與基板位移檢測之原理。 圖14B顯示配置電極之變化例與基板位移檢測之原理。 圖15A概略顯示第一變化例之貼合檢測裝置的構成。 圖15B概略顯示第一變化例之貼合檢測裝置的構成。 圖16A概略顯示第二變化例之貼合檢測裝置的構成。 圖16B概略顯示第二變化例之貼合檢測裝置的構成。Figure 1 schematically shows the structure of the substrate bonding system. Figure 2 shows the surface structure of the substrate bonded by the substrate bonding system. Figure 3 schematically shows the structure of the laminating device. Fig. 4A schematically shows the structure of the bonding detection device. Fig. 4B schematically shows another configuration of the bonding detection device. Fig. 5A shows an example of the arrangement of electrode pairs. Fig. 5B shows a variation of the configuration of the electrode pair in Fig. 5A. Fig. 6A shows another example of arranging electrode pairs. Fig. 6B shows a variation of the configuration of the electrode pair in Fig. 6A. Fig. 7A schematically shows the cross-sectional structure of the holder for holding the substrate. Fig. 7B schematically shows the cross-sectional structure of another holder for holding the substrate. FIG. 8A shows the state of the substrate in the substrate bonding process (the state where the two substrates are aligned). Fig. 8B shows the state of the substrate in the substrate bonding process (the state in which the contact area is formed). FIG. 8C shows the state of the substrate in the substrate bonding process (the state in which the bonding wave is in progress). Fig. 8D shows the state of the substrate in the substrate bonding process (the state where the bonding is completed). Figure 9A shows the electrode shape and the principle of detecting substrate displacement. Fig. 9B shows the electrode shape and the principle of detecting the displacement of the substrate. Fig. 9C shows an example of the result of substrate displacement detection in the substrate bonding process. FIG. 9D shows another example of the result of substrate displacement detection in the substrate bonding process. Figure 10A shows another principle of electrode shape and substrate displacement detection. Figure 10B shows another principle of electrode shape and substrate displacement detection. FIG. 10C shows an example of the result of detecting the displacement of the substrate in the substrate bonding process. Fig. 11A shows the electrode shape and the principle of substrate displacement detection in a modified example. Fig. 11B shows the electrode shape and the principle of substrate displacement detection of the modified example. Figure 12 shows the flow of the substrate bonding step. FIG. 13A shows one process (carrying in the substrate) of the substrate bonding step in the bonding apparatus. FIG. 13B shows a process (detection of alignment marks) of the substrate bonding step in the bonding device. FIG. 13C shows a process (activation of the substrate surface) of the substrate bonding step in the bonding device. Fig. 13D shows a step (aligning the substrate) of the substrate bonding step in the bonding apparatus. Fig. 13E shows a step (arrangement of electrode pairs) of the substrate bonding step in the bonding device. Fig. 13F shows a step of the substrate bonding step in the bonding device (forming a bonding starting point). Fig. 13G shows one step of the substrate bonding step in the bonding apparatus (carrying out the bonded substrate). Fig. 14A shows a variation of the arrangement of electrodes and the principle of substrate displacement detection. Figure 14B shows a variation of the electrode configuration and the principle of substrate displacement detection. Fig. 15A schematically shows the configuration of the bonding detection device of the first modification. Fig. 15B schematically shows the configuration of the bonding detection device of the first modification. Fig. 16A schematically shows the configuration of the bonding detection device of the second modification. Fig. 16B schematically shows the configuration of the bonding detection device of the second modification.

150:控制裝置 150: control device

150a:判斷部 150a: Judgment Department

150b:控制部 150b: Control Department

211、213:基板 211, 213: substrate

215:接觸區域 215: contact area

350:貼合檢測裝置 350: Fitting detection device

351A~351H:電極對 351A~351H: Electrode pair

351a~351h:電極 351a~351h: Electrode

353a~353e:檢測部 353a~353e: Detection Department

Claims (20)

一種基板貼合裝置,係貼合第一基板及第二基板,且具備: 一對電極,其係夾著前述第一基板及前述第二基板之至少一方而配置;及 檢測部,其係檢測前述一對電極間之靜電特性。A substrate bonding device is for bonding a first substrate and a second substrate, and includes: A pair of electrodes, which are arranged to sandwich at least one of the first substrate and the second substrate; and The detection part detects the electrostatic characteristics between the aforementioned pair of electrodes. 如請求項1之基板貼合裝置,其中前述一對電極係在前述第一基板及前述第二基板之貼合面的面方向,夾著前述第一基板及前述第二基板而配置。The substrate bonding apparatus according to claim 1, wherein the pair of electrodes are arranged in a plane direction of bonding surfaces of the first substrate and the second substrate, sandwiching the first substrate and the second substrate. 如請求項2之基板貼合裝置,其中前述一對電極中之至少一方具有與前述第一基板及前述第二基板之至少一方的端面相對之電極面, 前述電極面具有沿著前述第一基板及前述第二基板重疊之方向而寬度變化的形狀。The substrate bonding device of claim 2, wherein at least one of the pair of electrodes has an electrode surface opposed to an end surface of at least one of the first substrate and the second substrate, The electrode surface has a shape whose width changes along the direction in which the first substrate and the second substrate overlap. 如請求項2之基板貼合裝置,其中前述一對電極中之至少一方相對於與前述面方向交叉之方向傾斜配置。The substrate bonding apparatus according to claim 2, wherein at least one of the pair of electrodes is arranged obliquely with respect to the direction intersecting the plane direction. 如請求項2之基板貼合裝置,其中前述一對電極就前述面方向,係夾著前述第一基板及前述第二基板間之接觸區域,彼此相對配置於前述第一基板及前述第二基板之側方。The substrate bonding device of claim 2, wherein the pair of electrodes are arranged on the first substrate and the second substrate opposite to each other in the direction of the surface, sandwiching the contact area between the first substrate and the second substrate The side. 如請求項5之基板貼合裝置,其中前述檢測部具有導件,其係可將前述一對電極在前述第一基板及前述第二基板之周方向移動。The substrate bonding device of claim 5, wherein the detection portion has a guide member that can move the pair of electrodes in the circumferential direction of the first substrate and the second substrate. 如請求項2之基板貼合裝置,其中前述一對電極係夾著從前述第一基板及前述第二基板之間的接觸區域於與前述面方向平行之第一方向上離開的前述第一基板及前述第二基板的緣部,於與前述第一方向交叉之第二方向上而彼此相對配置。The substrate bonding device of claim 2, wherein the pair of electrodes sandwich the first substrate separated from the contact area between the first substrate and the second substrate in a first direction parallel to the surface direction And the edges of the second substrate are arranged opposite to each other in a second direction intersecting the first direction. 如請求項7之基板貼合裝置,其中前述檢測部具有導件,其係可將前述一對電極在前述第一方向移動。According to the substrate bonding device of claim 7, wherein the detection part has a guide which can move the pair of electrodes in the first direction. 如請求項2之基板貼合裝置,其中具備:一對第一電極,其係夾著前述第一基板及前述第二基板之間的接觸區域而彼此相對配置於前述第一基板及前述第二基板的側方;及一對第二電極,其係夾著前述第一基板及前述第二基板之緣部而彼此相對配置於前述第一基板及前述第二基板的側方; 前述一對第一電極具有比前述一對第二電極大之電極面。A substrate bonding device according to claim 2, which includes: a pair of first electrodes which are disposed opposite to each other on the first substrate and the second substrate, sandwiching the contact area between the first substrate and the second substrate The side of the substrate; and a pair of second electrodes, which are sandwiched between the edges of the first substrate and the second substrate and are arranged opposite to each other on the sides of the first substrate and the second substrate; The pair of first electrodes have larger electrode surfaces than the pair of second electrodes. 如請求項1之基板貼合裝置,其中具備複數個電極對,其係包含前述一對電極, 前述檢測部就各別前述複數個電極對使用不同頻率之交流訊號檢測靜電特性。Such as the substrate bonding device of claim 1, which is provided with a plurality of electrode pairs, which includes the aforementioned pair of electrodes, The detection unit detects the electrostatic characteristics of each of the plurality of electrode pairs using AC signals of different frequencies. 如請求項1之基板貼合裝置,其中進一步具備選擇器,其係從複數個電極對中選擇前述一對電極來重組。The substrate bonding device of claim 1, which is further provided with a selector, which selects the aforementioned pair of electrodes from a plurality of electrode pairs to recombine. 如請求項1之基板貼合裝置,其中具有電極驅動裝置,其係使前述一對電極從前述第一基板及前述第二基板之側方退出。The substrate bonding device according to claim 1, which includes an electrode driving device for retracting the pair of electrodes from the sides of the first substrate and the second substrate. 如請求項1之基板貼合裝置,其中進一步具備判斷部,其係依據前述靜電特性之檢測結果,判斷前述第一基板及前述第二基板間之接觸區域的狀態。For example, the substrate bonding device of claim 1 further includes a judgment unit that judges the state of the contact area between the first substrate and the second substrate based on the detection result of the electrostatic characteristic. 如請求項1之基板貼合裝置,其中進一步具備控制部,其係依據前述靜電特性之檢測結果控制前述第一基板及前述第二基板之至少一方的斜度。The substrate bonding apparatus of claim 1, which further includes a control unit that controls the slope of at least one of the first substrate and the second substrate based on the detection result of the electrostatic characteristic. 如請求項1至13中任一項之基板貼合裝置,其中前述一對電極中之至少一方係配置於使前述第一基板貼合於前述第二基板後之前述第一基板的背面側,或是,配置於使前述第一基板貼合於前述第二基板後與前述第一基板相對,而在使前述第一基板貼合於前述第二基板之前不與前述第一基板相對的位置。The substrate bonding device according to any one of claims 1 to 13, wherein at least one of the pair of electrodes is arranged on the back side of the first substrate after the first substrate is bonded to the second substrate, Or, it is arranged at a position where the first substrate is bonded to the second substrate and faces the first substrate, and before the first substrate is bonded to the second substrate, the first substrate is not opposed to the first substrate. 一種基板貼合方法,係貼合第一基板及第二基板之基板貼合方法,且包含: 在前述第一基板及前述第二基板之間形成各別一部分彼此接觸之接觸區域之階段; 使前述接觸區域擴大之階段;及 檢測夾著前述第一基板及前述第二基板之至少一方而配置的一對電極間之靜電特性之階段。A substrate bonding method is a substrate bonding method of bonding a first substrate and a second substrate, and includes: A stage of forming a contact area between the first substrate and the second substrate, each part of which is in contact with each other; The stage of expanding the aforementioned contact area; and The stage of detecting the electrostatic characteristics between a pair of electrodes arranged sandwiching at least one of the first substrate and the second substrate. 如請求項16之基板貼合方法,其中在前述第一基板及前述第二基板之貼合面的面方向夾著前述第一基板及前述第二基板而配置前述一對電極。The substrate bonding method according to claim 16, wherein the pair of electrodes are arranged by sandwiching the first substrate and the second substrate in the plane direction of the bonding surfaces of the first substrate and the second substrate. 如請求項16之基板貼合方法,其中在配置前述一對電極的階段之前,進一步具備檢測前述第一基板及前述第二基板之各別對位標記的階段。The substrate bonding method of claim 16, wherein before the stage of arranging the pair of electrodes, a stage of detecting the respective alignment marks of the first substrate and the second substrate is further provided. 如請求項16之基板貼合方法,其中進一步包含依據前述靜電特性之檢測結果判斷前述接觸區域之狀態的階段。The substrate bonding method of claim 16, which further includes a stage of judging the state of the contact area according to the detection result of the electrostatic characteristic. 如請求項16至19中任一項之基板貼合方法,其中進一步包含依據前述靜電特性之檢測結果控制前述第一基板及前述第二基板之至少一方斜度的階段。The substrate bonding method according to any one of claims 16 to 19, which further includes a stage of controlling the slope of at least one of the first substrate and the second substrate according to the detection result of the electrostatic characteristic.
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