TW202125858A - Perovskite photovoltaic component with a blocking structure, a cascade-type perovskite photovoltaic component, and a manufacturing method of the cascade-type perovskite photovoltaic component. - Google Patents

Abstract

Disclosed are a perovskite photovoltaic component with a blocking structure, a cascade-type perovskite photovoltaic component, and a manufacturing method of the cascade-type perovskite photovoltaic component. The perovskite photovoltaic component includes an electrode layer, a photoelectric module and a conductive layer sequentially formed on a substrate. The electrode layer has a first electrode and a second electrode separated from each other; the photoelectric module is formed by a download sub-transport layer, an upload sub-transport layer, and a perovskite active layer disposed between the download sub-transport layer and the upload sub-transport layer, and the upload sub-transport layer has a shielding portion extended from a side near the second electrode and covering the download sub-transport layer and a side of the perovskite active layer, so that when the conductive layer and the second electrode form an electric connection, the conductive layer is prevented from touching the perovskite active layer in order to prevent the deterioration of the perovskite active layer and the conductive layer and achieve the effects of improving the performance and service life of the perovskite photovoltaic component and maintaining aesthetics .

Description

Perovskite optoelectronic element with barrier structure, tandem perovskite optoelectronic element and manufacturing method for tandem perovskite optoelectronic element

A manufacturing method of perovskite optoelectronic element with barrier structure, tandem perovskite optoelectronic element, and tandem perovskite optoelectronic element, especially to prevent the perovskite active layer from contacting the conductive layer and cause material deterioration And the manufacturing method of the perovskite optoelectronic element, the series-connected perovskite optoelectronic element and the series-connected perovskite optoelectronic element with the element failure.

Perovskite optoelectronic materials have developed rapidly in recent years. Because of their good optical and electrical properties, they can be used to make low-cost and high-functional optoelectronic components, including solar cells, light-emitting diodes, or light sensors, etc. .

However, the conductive layer used in the production of perovskite optoelectronic devices is usually made of metal materials such as Au, Ag, Cu, Al, Ca, etc., and there will be substance and ion diffusion between the active layer of the perovskite optoelectronic module , Leading to material deterioration, which in turn causes component failure. Especially when the module is enlarged and made into a module component, the conductive layer will have a larger area of contact at the edge of the active layer, which will not only cause more serious component failure, but also cause the upper conductive layer to change its appearance due to deterioration, which makes the optoelectronic device The performance and appearance of the product cause adverse effects.

Therefore, how to effectively prevent the conductive layer from directly contacting the perovskite active layer and avoid the deterioration of the perovskite active layer and the conductive layer is a subject that the related industry urgently wants to improve.

The main purpose of the present invention is to use the extended shielding portion of the carrier transport layer on the optoelectronic module to cover the side of the download subtransmission layer and the perovskite active layer of the optoelectronic module, so as to avoid electrical conductivity between the conductive layer and the electrode layer. When connected, the conductive layer and the perovskite active layer come into contact, thereby preventing the perovskite active layer and the conductive layer from deteriorating, thereby improving the performance and service life of the perovskite optoelectronic device, and maintaining the beauty.

The secondary purpose of the present invention is to prevent the conductive layer from contacting the perovskite active layer by the shielding portion, and to further use the barrier layer to ensure that the conductive layer and the perovskite active layer do not contact.

To achieve the above objective, the perovskite optoelectronic element of the present invention is provided with an electrode layer, a photoelectric module and a conductive layer on a substrate. The substrate is made of a light-transmitting and insulating material and has a light-incident surface and a light-emitting surface; The layer has a first electrode and a second electrode spaced apart on the surface of the light-emitting surface of the substrate; the photoelectric module is composed of a download sub-transport layer, an upper carrier transport layer, and a perovskite located between the download sub-transport layer and the upper carrier transport layer. The active layer is formed, and the download sub-transport layer covers the surface of the first electrode of the aforementioned electrode layer, and the upper carrier-transport layer has a shielding portion on the side close to the second electrode, and the shielding portion extends toward the electrode layer and covers Download the sub-transport layer and the side of the perovskite active layer; the conductive layer covers the surface of the carrier-transport layer on the photoelectric module. The electrodes are electrically connected, and the conductive portion covers the surface of the shielding portion of the photoelectric module.

In the aforementioned perovskite optoelectronic device with a barrier structure, a barrier layer is further provided between the carrier transport layer and the conductive layer on the photoelectric module. A blocking part extends on one side of the layer, and the blocking part is located between the conducting part and the shielding part.

In yet another embodiment of the present invention, a series-connected perovskite optoelectronic element is provided with an electrode layer, a plurality of optoelectronic modules, and a plurality of conductive layers on a substrate. The substrate is made of a transparent and insulating material and has an input The light-emitting surface and the light-emitting surface; the electrode layer has a first electrode and a second electrode spaced apart on the surface of the light-emitting surface of the substrate; the photoelectric module is composed of a download sub-transport layer, an upper carrier transport layer, and located between the download sub-transport layer and the upper carrier transmission The perovskite active layer is formed between the layers. The download sub-transmission layer of each optoelectronic module is located on the surface of the first electrode and the second electrode of the aforementioned electrode layer, so that a conduction is formed between two adjacent optoelectronic modules. The second electrode has a conductive part located in the conductive space at one end, and a shielding part extends on the carrier transport layer of each optoelectronic module close to the conductive space, and the shielding part extends toward the electrode layer and covers On the side of the download sub-transport layer and the perovskite active layer; the conductive layer respectively covers the surface of the carrier-transport layer on the photoelectric module, and the conductive layer on the side of the first electrode of the electrode layer extends with a conductive portion, The conductive portion is located in the conductive space and is electrically connected to the second electrode, and the conductive portion covers the surface of the shielding portion provided by the optoelectronic module above the first electrode.

In the aforementioned series-connected perovskite optoelectronic element with a barrier structure, wherein the photoelectric module above the first electrode of the electrode layer is further provided with a barrier layer between the upper carrier transport layer and the conductive layer, and the barrier layer is located on the upper carrier. The sub-transmission layer is close to the side of the shielding part, and a blocking part extends on one side of the blocking layer, and the blocking part is located between the conducting part and the shielding part.

In the aforementioned series-connected perovskite optoelectronic element with a barrier structure, the optoelectronic module above the second electrode of the electrode layer has a gap formed between the shielding portion and the conducting portion.

The manufacturing method of the tandem perovskite photoelectric element of the present invention is manufactured according to the following steps:

(A) Take a substrate made of a light-transmitting and insulating material, arrange an electrode layer on the light-emitting surface of the substrate, and pattern the electrode layer to form a first electrode and a second electrode with intervals ；

(B) On the surface of the electrode layer, a download sub-transport layer and a perovskite active layer are sequentially arranged;

(C) Patterning the download sub-transmission layer and the perovskite active layer to form a conductive space for the second electrode to expose the download sub-transmission layer and the perovskite active layer;

(D) An upper carrier transport layer is provided on the surface of the perovskite active layer, and the upper carrier transport layer has a shielding part extending on the side close to the conduction space. The shielding part is located in the conduction space and covers the download sub-transmission layer and Side of perovskite active layer;

(D) A conductive layer is provided on the surface of the upper carrier transport layer, and a conductive portion extends from the side of the conductive layer. The conductive portion is located in the conductive space and is electrically connected to the second electrode;

(E) Pattern the conductive layer above the second electrode to form a disconnecting space, so that the conductive layer above the first electrode and the second electrode are electrically connected to form a series connection.

The aforementioned method for manufacturing a series-connected perovskite optoelectronic device with a barrier structure, wherein an upper carrier transport layer and a shielding portion are provided on the surface of the perovskite active layer, and then the upper carrier transport layer is disposed on the side close to the shielding portion The barrier layer, and the barrier portion extending on one side of the barrier layer and covering the shielding portion, and then the conductive layer is arranged so that the conductive layer covers the surface of the upper carrier transport layer and the barrier layer, and the conductive portion covers the surface of the barrier portion.

Please refer to the first figure. It can be clearly seen from the figure that the perovskite photoelectric element of the present invention is provided with an electrode layer 2, a photoelectric module 3 and a conductive layer 4 on a substrate 1, wherein:

The substrate 1 is made of a transparent and insulating material, and has a light-incident surface 11 and a light-emitting surface 12.

The electrode layer 2 has a first electrode 21 and a second electrode 22 spaced apart on the surface of the light-emitting surface 12 of the substrate 1.

The photoelectric module 3 is composed of a download sub-transport layer 31, an upper carrier transport layer 32, and a perovskite active layer 33 located between the download sub-transport layer 31 and the upper carrier transport layer 32, and the download sub-transport layer 31 It covers the surface of the first electrode 21 of the aforementioned electrode layer 2, and the upper carrier transport layer 32 has a shielding portion 321 extending on the side close to the second electrode 22. The shielding portion 321 extends toward the electrode layer 2 and covers the downloading sub-transmission layer. The layer 31 and the perovskite active layer 33 are on the side.

The conductive layer 4 covers the surface of the carrier transport layer 32 on the photoelectric module 3, and the conductive layer 4 has a conductive portion 41 extending on the side close to the second electrode 22, and forms an electrical connection with the second electrode 22 of the electrode layer 2. Connected and the conductive portion 41 covers the surface of the shielding portion 321 of the optoelectronic module 3.

By this, since the photoelectric module 3 is to improve its structural stability and avoid ion dissociation and decomposition, its carrier transport layers (31, 32) will use electron-hole transport materials that can block the migration of insulators, and the present invention will upload The sub-transport layer 32 extends beyond the shielding portion 321 to cover the side of the perovskite active layer 33, which effectively prevents the perovskite active layer 33 from contacting the conductive portion 41 of the conductive layer 4, thereby preventing the perovskite active layer 33 from being connected to each other. The deterioration of the portion 41 allows the first electrode 21 and the second electrode 22 of the electrode layer 2 to form a loop, which is convenient for use.

Please refer to the second figure. It can be clearly seen from the figure that the difference between another embodiment of the perovskite optoelectronic device of the present invention and the aforementioned perovskite optoelectronic device is that the carrier transport layer 32 on the optoelectronic module 3 and A barrier layer 5 is further provided between the conductive layers 4, and the barrier layer 5 is located on the side of the upper carrier transport layer 32 close to the shielding portion 321, and a barrier portion 51 extends on the side of the barrier layer 5, and the barrier portion 51 is located at the conducting portion 41 Between the shielding portion 321 and the shielding portion 321, the conductive portion 41 is simultaneously insulated from the shielding portion 321 and the shielding portion 51 by the provision of the shielding portion 51, which makes contact more difficult and ensures the stability of the product.

Please refer to the third figure. It can be clearly seen from the figure that the series-connected perovskite optoelectronic device of the present invention is provided with an electrode layer 2, a plurality of optoelectronic modules 3, and a plurality of conductive layers 4 on a substrate 1. ,in:

The substrate 1 is made of a transparent and insulating material, and has a light-incident surface 11 and a light-emitting surface 12.

The electrode layer 2 has a first electrode 21 and a second electrode 22 spaced apart on the surface of the light-emitting surface 12 of the substrate 1.

The photoelectric module 3 is composed of a download sub-transport layer 31, an upper carrier transport layer 32, and a perovskite active layer 33 located between the download sub-transport layer 31 and the upper carrier transport layer 32. The download sub-transmission layer 31 is respectively located on the surface of the first electrode 21 and the second electrode 22 of the aforementioned electrode layer 2, so that a conductive space 6 is formed between two adjacent optoelectronic modules 3, and the second electrode 22 extends at one end The conductive portion 41 is located in the conductive space 6, and the carrier transport layer 32 on each optoelectronic module 3 has a shielding portion 321 extending on the side close to the conductive space 6. The shielding portion 321 extends toward the electrode layer 2 and covers the download The sub-transport layer 31 and the perovskite active layer 33 are on the side.

The conductive layer 4 respectively covers the surface of the carrier transport layer 32 on the photoelectric module 3, and the conductive layer 4 above the first electrode 21 of the electrode layer 2 has a conductive portion 41 extending on the side, and the conductive portion 41 is located in the conductive layer. In the space 6, it is electrically connected to the second electrode 22, and the conductive portion 41 covers the surface of the shielding portion 321 provided on the optoelectronic module 3 above the first electrode 21.

Furthermore, the photoelectric module 3 above the first electrode 21 of the electrode layer 2 is further provided with a barrier layer 5 between the upper carrier transport layer 32 and the conductive layer 4, and the barrier layer 5 is located close to the upper carrier transport layer 32. On the side of the shielding portion 321, and on the side of the blocking layer 5, there is a blocking portion 51 extending between the conductive portion 41 and the shielding portion 321, and the photoelectric module 3 above the second electrode 22 of the electrode layer 2, which A gap is formed between the shielding portion 321 and the conducting portion 41.

In this way, the conductive layer 4 above the first electrode 21 is electrically connected to the second electrode 22, and then a plurality of optoelectronic modules 3 are connected in series, and the shielding portion 321, the blocking portion 51, and the shielding portion 321 are connected to the conductive portion. The gap formed between 41 can effectively prevent the active perovskite layer 33 from contacting the conductive portion 41 of the conductive layer 4, thereby preventing the perovskite active layer 33 and the conductive portion 41 from being deteriorated.

Please refer to Figures 4 to 11. It can be clearly seen from the figures that the tandem perovskite optoelectronic device of the present invention is manufactured according to the following steps:

(A) Fabrication of electrode layer 2: Please refer to the fourth and fifth diagrams. A substrate 1 made of a light-transmitting and insulating material is taken, and an electrode layer is provided on the light-emitting surface 12 of the substrate 1 2. Pattern the electrode layer 2 to form a first electrode 21 and a second electrode 22 with a gap.

(B) Fabrication of the download sub-transmission layer 31 and the perovskite active layer 33: Please refer to the sixth figure, which is attached to the surface of the electrode layer 2. The download sub-transmission layer 31 and the perovskite active layer 33 are sequentially arranged, and The carrier transport layer 31 is filled between the first electrode 21 and the second electrode 22.

(C) First patterning: Please refer to the seventh figure, patterning the download sub-transmission layer 31 and the perovskite active layer 33, so that the download sub-transmission layer 31 and the perovskite active layer 33 are connected Space 6 allows the download sub-transmission layer 31 and the perovskite active layer 33 to be exposed on the side of the second electrode 22.

(D) Forming the photoelectric module 3: Please refer to the eighth figure, an upper carrier transport layer 32 is provided on the surface of the perovskite active layer 33, and the upper carrier transport layer 32 extends on the side close to the conduction space 6 with shielding The shielding portion 321 is located in the conduction space 6, and covers the side of the download sub-transmission layer 31 and the perovskite active layer 33, so that the first electrode 21 and the second electrode 22 respectively form a sub-transmission layer 31. The optoelectronic module 3 composed of the upper carrier transport layer 32 and the perovskite active layer 33.

(E) Setting the barrier layer 5: Please refer to the ninth figure, the barrier layer 5 is provided on the carrier transport layer 32 of each optoelectronic module 3 near the shielding portion 321, and the barrier layer 5 extends on one side and covers and shields Section 321 of the blocking section 51.

(F) Setting the conductive layer 4: Please refer to the tenth figure, the conductive layer 4 is provided on the surface of the upper carrier transport layer 32, and the conductive layer 4 has a conductive portion 41 extending from the side of the conductive layer 4, and the conductive portion 41 is located in the conductive space 6 and An electrical connection is formed with the second electrode 22, and the conductive portion 41 covers the surface of the blocking portion 51.

(G) Setting the disconnection space 7: pattern the conductive layer 4 above the second electrode 22 to form a disconnection space 7 so that the conductive layer 4 above the first electrode 21 and the second electrode 22 are electrically connected to form a string The connection shape completes the production of the tandem perovskite photoelectric element of the present invention.

1: substrate 11: Glossy surface 12: Glossy surface 2: Electrode layer 21: First electrode 22: second electrode 3: Optoelectronic module 31: Download the sub-transport layer 32: Upload carrier transport layer 321: Shading 33: Perovskite active layer 4: conductive layer 41: Conduction part 5: Barrier layer 51: Blocking Department 6: Conduction space 7: Open space

The first figure is a schematic diagram of the perovskite optoelectronic device of the present invention. The second figure is a schematic diagram of another embodiment of the perovskite optoelectronic device of the present invention. The third figure is a schematic diagram of the tandem perovskite optoelectronic device of the present invention. The fourth figure is a schematic diagram (1) of the manufacturing process of the tandem perovskite optoelectronic device according to the present invention. The fifth figure is a schematic diagram (2) of the manufacturing process of the tandem perovskite optoelectronic device according to the present invention. The sixth figure is a schematic diagram (3) of the production process of the tandem perovskite optoelectronic device according to the present invention. Figure 7 is a schematic diagram (4) of the manufacturing process of the tandem perovskite optoelectronic device according to the present invention. The eighth figure is a schematic diagram (5) of the production process of the tandem perovskite optoelectronic device according to the present invention. The ninth figure is a schematic diagram (6) of the manufacturing process of the tandem perovskite optoelectronic device according to the present invention. The tenth figure is a schematic diagram (7) of the production process of the tandem perovskite optoelectronic device according to the present invention. The eleventh figure is a schematic diagram (8) of the production process of the tandem perovskite optoelectronic device according to the present invention.

1: substrate

11: Glossy surface

12: Glossy surface

2: Electrode layer

21: First electrode

22: second electrode

3: Optoelectronic module

31: Download the sub-transport layer

32: Upload carrier transport layer

321: Shading

33: Perovskite active layer

4: conductive layer

41: Conduction part

Claims (7)

A perovskite photoelectric element with a barrier structure. The perovskite photoelectric element is provided with an electrode layer, a photoelectric module and a conductive layer on a substrate, wherein: The substrate is made of transparent and insulating material, and has a light-incident surface and a light-emitting surface; The electrode layer has a first electrode and a second electrode spaced apart on the light-emitting surface of the substrate; The photoelectric module is composed of a download sub-transport layer, an upper carrier transport layer, and a perovskite active layer located between the download sub-transport layer and the upper carrier transport layer, and the download sub-transport layer covers the aforementioned electrode layer On the surface of the first electrode, the upper carrier transport layer has a shielding portion extending from the side close to the second electrode, and the shielding portion extends toward the electrode layer and covers the side of the download sub-transport layer and the perovskite active layer; The conductive layer covers the surface of the carrier transport layer on the photoelectric module. The conductive layer has a conductive portion on the side close to the second electrode and forms an electrical connection with the second electrode of the electrode layer. The conductive portion covers the photoelectric module. The surface of the masking part of the module. The perovskite optoelectronic device with a barrier structure according to claim 1, wherein a barrier layer is further provided between the carrier transport layer and the conductive layer on the photoelectric module, and the barrier layer is located near the shielding portion of the upper carrier transport layer On the side, and on one side of the barrier layer, a barrier portion is extended, and the barrier portion is located between the conducting portion and the shielding portion. A series-connected perovskite optoelectronic element with a barrier structure. The perovskite optoelectronic element is provided with an electrode layer, a plurality of optoelectronic modules and a plurality of conductive layers on a substrate, wherein: The substrate is made of transparent and insulating material, and has a light-incident surface and a light-emitting surface; The electrode layer has a first electrode and a second electrode spaced apart on the light-emitting surface of the substrate; The optoelectronic module is composed of a download sub-transport layer, an upper carrier transport layer, and a perovskite active layer located between the download sub-transmission layer and the upper carrier transport layer. The download sub-transmission layer of each photoelectric module is located respectively The surfaces of the first electrode and the second electrode of the aforementioned electrode layer form a conduction space between two adjacent optoelectronic modules, and a conduction part located in the conduction space is extended at one end of the second electrode. The upper carrier transport layer has a shielding portion extending on the side close to the conduction space, and the shielding portion extends toward the electrode layer and covers the side of the download sub-transport layer and the perovskite active layer; The conductive layer respectively covers the surface of the carrier transport layer on the photoelectric module, and the conductive layer above the first electrode of the electrode layer has a conductive portion extending on the side of the conductive layer. The conductive portion is located in the conductive space and is connected to the second electrode. An electrical connection is formed, and the conductive portion covers the surface of the shielding portion provided on the photoelectric module above the first electrode. According to claim 3, the tandem perovskite photoelectric element with a barrier structure, wherein the photoelectric module above the first electrode of the electrode layer is further provided with a barrier layer between the upper carrier transport layer and the conductive layer, The blocking layer is located on the side of the upper carrier transport layer close to the shielding part, and a blocking part extends on one side of the blocking layer, and the blocking part is located between the conducting part and the shielding part. According to claim 3, the series-connected perovskite photoelectric element with a barrier structure, wherein the photoelectric module above the second electrode of the electrode layer has a gap formed between the shielding part and the conducting part. A method for manufacturing a series-connected perovskite optoelectronic element with a barrier structure. The series-connected perovskite optoelectronic element is manufactured according to the following steps: (A) Take a substrate made of a light-transmitting and insulating material, arrange an electrode layer on the light-emitting surface of the substrate, and pattern the electrode layer to form a first electrode and a second electrode with intervals ； (B) On the surface of the electrode layer, a download sub-transport layer and a perovskite active layer are sequentially arranged; (C) Patterning the download sub-transmission layer and the perovskite active layer to form a conductive space for the second electrode to expose the download sub-transmission layer and the perovskite active layer; (D) An upper carrier transport layer is provided on the surface of the perovskite active layer, and the upper carrier transport layer has a shielding part extending on the side close to the conduction space. The shielding part is located in the conduction space and covers the download sub-transmission layer and Side of perovskite active layer; (D) A conductive layer is provided on the surface of the upper carrier transport layer, and a conductive portion extends from the side of the conductive layer. The conductive portion is located in the conductive space and is electrically connected to the second electrode; (E) Pattern the conductive layer above the second electrode to form a disconnection space, so that the conductive layer above the first electrode and the second electrode are electrically connected to form a series connection. The method for manufacturing a series-connected perovskite optoelectronic device with a barrier structure according to claim 6, wherein after the upper carrier transport layer and the shielding portion are provided on the surface of the perovskite active layer, the upper carrier transport layer approaches the shielding first A barrier layer is arranged on the side of the part, and the barrier part that extends on one side of the barrier layer and covers the shielding part, and then the conductive layer is arranged so that the conductive layer covers the upper carrier transport layer and the surface of the barrier layer, and the conductive part covers the barrier part surface.

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