TW202125800A - Display and method for manufacturing display - Google Patents

Display and method for manufacturing display Download PDF

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TW202125800A
TW202125800A TW109126824A TW109126824A TW202125800A TW 202125800 A TW202125800 A TW 202125800A TW 109126824 A TW109126824 A TW 109126824A TW 109126824 A TW109126824 A TW 109126824A TW 202125800 A TW202125800 A TW 202125800A
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auxiliary
phosphor
light
emitting element
inorganic light
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TW109126824A
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Chinese (zh)
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TWI757822B (en
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池田雅延
金谷康弘
小川耀博
青木義典
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日商日本顯示器股份有限公司
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    • GPHYSICS
    • G09EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
    • G09FDISPLAYING; ADVERTISING; SIGNS; LABELS OR NAME-PLATES; SEALS
    • G09F9/00Indicating arrangements for variable information in which the information is built-up on a support by selection or combination of individual elements
    • G09F9/30Indicating arrangements for variable information in which the information is built-up on a support by selection or combination of individual elements in which the desired character or characters are formed by combining individual elements
    • G09F9/33Indicating arrangements for variable information in which the information is built-up on a support by selection or combination of individual elements in which the desired character or characters are formed by combining individual elements being semiconductor devices, e.g. diodes
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/15Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components with at least one potential-jump barrier or surface barrier specially adapted for light emission
    • H01L27/153Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components with at least one potential-jump barrier or surface barrier specially adapted for light emission in a repetitive configuration, e.g. LED bars
    • H01L27/156Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components with at least one potential-jump barrier or surface barrier specially adapted for light emission in a repetitive configuration, e.g. LED bars two-dimensional arrays

Abstract

To appropriately make a display usable even when a defect occurs. A display comprises: a plurality of inorganic luminous bodies 100 arranged in matrix; and an opposing electrode connected to the plurality of inorganic luminous bodies 100. The plurality of inorganic luminous bodies 100 includes a single-color inorganic luminous body 100A that can emit light in a predetermined wavelength range, and an auxiliary inorganic luminous body 100B comprising a first auxiliary inorganic light emitting device 102RB that can emit light in a first wavelength range when supplied with current, a second auxiliary inorganic light emitting device 102GB that can emit light in a second wavelength range when supplied with current, and an electrode connected to the first auxiliary inorganic light emitting device 102RB and the second auxiliary inorganic light emitting device 102GB. The opposing electrode is connected to the single-color inorganic luminous body 100A and the first auxiliary inorganic light emitting device 102RB, and is not connected to the second auxiliary inorganic light emitting device 102GB.

Description

顯示裝置及顯示裝置之製造方法Display device and manufacturing method of display device

本發明係關於一種顯示裝置及顯示裝置之製造方法。The present invention relates to a display device and a manufacturing method of the display device.

近年來,作為顯示元件,利用微小尺寸之發光二極體(微型LED(micro LED))之顯示裝置備受矚目(例如,參照專利文獻1)。複數個發光二極體連接於陣列基板(於專利文獻1中為驅動器底板),陣列基板具備用於驅動發光二極體之像素電路(於專利文獻1中為電子控制電路)。 [先前技術文獻] [專利文獻]In recent years, as a display element, a display device using a micro-sized light-emitting diode (micro LED) has attracted attention (for example, refer to Patent Document 1). A plurality of light-emitting diodes are connected to an array substrate (driver backplane in Patent Document 1), and the array substrate is provided with a pixel circuit for driving the light-emitting diodes (electronic control circuit in Patent Document 1). [Prior Technical Literature] [Patent Literature]

[專利文獻1]日本特表2017-529557號公報[Patent Document 1] JP 2017-529557 Publication

[發明所欲解決之問題][The problem to be solved by the invention]

然而,使用發光二極體之顯示裝置因發光二極體之尺寸較小等之理由,難以進行發光二極體向基板之搭載等之製造,容易招致發光二極體之不良。於將發生不良之顯示裝置作廢等而不使用之情形下,成品率降低。因此,於使用發光二極體之顯示裝置中,謀求即便於在製造時發生不良之情形下,亦可適切地使用。However, for display devices using light-emitting diodes, it is difficult to mount the light-emitting diodes on the substrate due to the small size of the light-emitting diodes and other reasons, and it is easy to cause defects of the light-emitting diodes. In the case where the defective display device is discarded and not used, the yield is reduced. Therefore, in a display device using a light-emitting diode, it is desired that it can be suitably used even if a defect occurs during manufacturing.

本發明係鑒於上述之問題而完成者,目的在於提供一種即便於在製造時發生不良之情形下,亦可適切地使用之顯示裝置及顯示裝置之製造方法。 [解決問題之技術手段]The present invention was completed in view of the above-mentioned problems, and its object is to provide a display device and a manufacturing method of the display device that can be suitably used even in the case of failure during manufacturing. [Technical means to solve the problem]

本發明之一態樣之顯示裝置具備矩陣狀排列之複數個無機發光體、及連接於複數個前述無機發光體之對向電極,且複數個前述無機發光體包含:單色無機發光體,其可發出特定波長頻帶之光;及輔助無機發光體,其具備:在被供給電流之情形下可發出第1波長頻帶之光之第1輔助無機發光元件、在被供給電流之情形下可發出第2波長頻帶之光之第2輔助無機發光元件、及連接於第1輔助無機發光元件與第2輔助無機發光元件之電極;且前述對向電極連接於前述單色無機發光體及前述第1輔助無機發光元件,未連接於前述第2輔助無機發光元件。A display device of one aspect of the present invention includes a plurality of phosphors arranged in a matrix, and a counter electrode connected to the plurality of phosphors, and the plurality of phosphors includes: a monochromatic phosphor, which Can emit light in a specific wavelength band; and an auxiliary inorganic light-emitting body, which has: a first auxiliary inorganic light-emitting element that can emit light in the first wavelength band when current is supplied, and a first auxiliary inorganic light-emitting element that can emit light in the first wavelength band when current is supplied A second auxiliary inorganic light-emitting element for light of 2 wavelength bands, and an electrode connected to the first auxiliary inorganic light-emitting element and the second auxiliary inorganic light-emitting element; and the counter electrode is connected to the monochromatic phosphor and the first auxiliary The inorganic light-emitting element is not connected to the aforementioned second auxiliary inorganic light-emitting element.

本發明之一態樣之顯示裝置之製造方法包含:單色無機發光體形成步驟,其形成可發出特定波長頻帶之光之單色無機發光體;輔助無機發光體形成步驟,其形成輔助無機發光體,該輔助無機發光體具備:在被供給電流之情形下可發出第1波長頻帶之光之第1輔助無機發光元件、在被供給電流之情形下可發出第2波長頻帶之光之第2輔助無機發光元件、及連接於前述第1輔助無機發光元件與前述第2輔助無機發光元件之電極;及對向電極形成步驟,其形成對向電極,該對向電極連接於前述單色無機發光體及前述第1輔助無機發光元件,未連接於前述第2輔助無機發光元件。A method of manufacturing a display device according to one aspect of the present invention includes: a step of forming a monochromatic phosphor, which forms a monochromatic phosphor that can emit light in a specific wavelength band; and a step of forming an auxiliary phosphor, which forms an auxiliary phosphor The auxiliary inorganic light-emitting body is provided with: a first auxiliary inorganic light-emitting element that can emit light in the first wavelength band when current is supplied, and a second auxiliary inorganic light-emitting element that can emit light in the second wavelength band when current is supplied. Auxiliary inorganic light-emitting element, and an electrode connected to the first auxiliary inorganic light-emitting element and the second auxiliary inorganic light-emitting element; and a counter electrode forming step, which forms a counter electrode, and the counter electrode is connected to the monochromatic inorganic luminescence The body and the first auxiliary inorganic light-emitting element are not connected to the second auxiliary inorganic light-emitting element.

以下,針對本發明之各實施形態,一面參照附圖一面進行說明。此外,揭示終極而言僅為一例,對於本領域技術人員針對保持發明之主旨之適宜變更可容易地想到者,當然包含於本發明之範圍內。又,為使說明更加明確,圖式與實際態樣相較存在將各部分之寬度、厚度、形狀等示意性地顯示之情形,但其終極而言僅為一例,並非係限定本發明之解釋者。又,於本說明書及各圖中,存在針對與已出現之圖中所描述之要素同樣的要素,賦予同一符號,且適宜省略詳細說明之情形。Hereinafter, each embodiment of the present invention will be described with reference to the drawings. In addition, the disclosure is only an example at the end, and suitable changes that can be easily imagined by those skilled in the art to maintain the gist of the invention are of course included in the scope of the present invention. In addition, in order to make the description more clear, there are cases in which the width, thickness, shape, etc. of each part are shown schematically in comparison with the actual state of the drawings. By. In addition, in this specification and the drawings, there are cases where the same elements as those described in the already-appearing drawings are given the same symbols, and detailed descriptions are omitted as appropriate.

(第1實施形態) (顯示裝置之構成) 圖1係顯示第1實施形態之顯示裝置之構成例之平面圖。如圖1所示,第1實施形態之顯示裝置1包含:陣列基板2、像素Pix、驅動電路12、驅動IC(Integrated Circuit,積體電路)210、及陰極配線60。陣列基板2係用於驅動各像素Pix之驅動電路基板,亦被稱為底板或主動矩陣基板。陣列基板2具有:基板10、複數個電晶體、複數個電容、及各種配線等。(First Embodiment) (Constitution of display device) Fig. 1 is a plan view showing a configuration example of the display device of the first embodiment. As shown in FIG. 1, the display device 1 of the first embodiment includes an array substrate 2, a pixel Pix, a driving circuit 12, a driving IC (Integrated Circuit) 210, and a cathode wiring 60. The array substrate 2 is a driving circuit substrate for driving each pixel Pix, and is also called a backplane or an active matrix substrate. The array substrate 2 has a substrate 10, a plurality of transistors, a plurality of capacitors, various wirings, and the like.

如圖1所示,顯示裝置1具有:顯示區域AA、及周邊區域GA。顯示區域AA係供複數個像素Pix配置之區域,且係顯示圖像之區域。周邊區域GA係不與複數個像素Pix重疊之區域,配置於顯示區域AA之外側。As shown in FIG. 1, the display device 1 has a display area AA and a peripheral area GA. The display area AA is an area for the arrangement of a plurality of pixels Pix, and is an area for displaying images. The peripheral area GA is an area that does not overlap with a plurality of pixels Pix, and is arranged outside the display area AA.

複數個像素Pix在基板10之顯示區域AA中,於第1方向Dx及第2方向Dy排列。此外,第1方向Dx及第2方向Dy係相對於陣列基板2之基板10之第1面10a(參照圖5)平行之方向。第1方向Dx與第2方向Dy正交。惟,第1方向Dx可與第2方向Dy交叉而非正交。第3方向Dz係與第1方向Dx及第2方向Dy正交之方向。第3方向Dz例如對應於基板10之法線方向。再者,以下,俯視表示自第3方向Dz觀察之情形之位置關係。The plurality of pixels Pix are arranged in the first direction Dx and the second direction Dy in the display area AA of the substrate 10. In addition, the first direction Dx and the second direction Dy are directions parallel to the first surface 10a (see FIG. 5) of the substrate 10 of the array substrate 2. The first direction Dx is orthogonal to the second direction Dy. However, the first direction Dx may cross the second direction Dy instead of being orthogonal. The third direction Dz is a direction orthogonal to the first direction Dx and the second direction Dy. The third direction Dz corresponds to, for example, the normal direction of the substrate 10. In addition, in the following, the top view shows the positional relationship when viewed from the third direction Dz.

驅動電路12設置於基板10之周邊區域GA。驅動電路12係基於來自驅動IC 210之各種控制信號驅動複數條閘極線(例如,發光控制掃描線BG、重置控制掃描線RG、初始化控制掃描線IG及寫入控制掃描線SG(參照圖3))之電路。驅動電路12依次或同時選擇複數條閘極線,且對所選擇之閘極線供給閘極驅動信號。藉此,驅動電路12選擇連接於閘極線之複數個像素Pix。The driving circuit 12 is disposed in the peripheral area GA of the substrate 10. The driving circuit 12 drives a plurality of gate lines based on various control signals from the driving IC 210 (for example, the light emission control scan line BG, the reset control scan line RG, the initialization control scan line IG, and the write control scan line SG (refer to FIG. 3)) The circuit. The driving circuit 12 selects a plurality of gate lines sequentially or simultaneously, and supplies gate driving signals to the selected gate lines. Thereby, the driving circuit 12 selects a plurality of pixels Pix connected to the gate line.

驅動IC 210係控制顯示裝置1之顯示之電路。驅動IC 210可以COG(Chip On Glass,覆晶玻璃)安裝於基板10之周邊區域GA。並不限定於此,驅動IC 210可以COF(Chip On Film,覆晶薄膜)安裝於連接於基板10之周邊區域GA之配線基板上。此外,連接於基板10之配線基板例如為撓性印刷基板或硬性基板。The driving IC 210 is a circuit that controls the display of the display device 1. The driving IC 210 can be mounted on the peripheral area GA of the substrate 10 with COG (Chip On Glass). It is not limited to this, and the driver IC 210 can be mounted on a wiring substrate connected to the peripheral area GA of the substrate 10 by COF (Chip On Film). In addition, the wiring board connected to the board 10 is, for example, a flexible printed board or a rigid board.

陰極配線60設置於基板10之周邊區域GA。陰極配線60包圍顯示區域AA之複數個像素Pix及周邊區域GA之驅動電路12而設置。複數個無機發光體100(參照圖4)之陰極(陰極電極114(參照圖4))連接於共通之陰極配線60,被供給固定電位(例如,接地電位)。更具體而言,無機發光體100之陰極電極114經由陣列基板2上之對向陰極電極90e連接於陰極配線60。此外,可行的是,陰極配線14於一部分具有狹槽,於基板10上,由2條不同之配線形成。The cathode wiring 60 is provided in the peripheral area GA of the substrate 10. The cathode wiring 60 is provided to surround the plurality of pixels Pix in the display area AA and the driving circuit 12 in the peripheral area GA. The cathodes (cathode electrodes 114 (see FIG. 4)) of the plurality of inorganic light emitters 100 (see FIG. 4) are connected to the common cathode wiring 60, and are supplied with a fixed potential (for example, ground potential). More specifically, the cathode electrode 114 of the inorganic light-emitting body 100 is connected to the cathode wiring 60 via the opposite cathode electrode 90 e on the array substrate 2. In addition, it is feasible that the cathode wiring 14 has a slot in a part, and is formed by two different wirings on the substrate 10.

圖2係顯示第1實施形態之複數個像素之平面圖。如圖2所示,1個像素Pix包含複數個像素49。像素49分別具有具備無機發光元件102之無機發光體100。無機發光體100係俯視下具有數μm以上、300 μm以下之程度之大小之無機發光二極體(LED:Light Emitting Diodee)晶片,一般而言,將一個晶片尺寸為100 μm以上稱為迷你LED(mini LED),將未達100 μm~數μm之尺寸稱為微型LED(micro LED)。於本發明中,任一尺寸之LED均可使用,只要與顯示裝置之畫面尺寸(一像素之大小)相應地分別使用即可。於各像素具備微型LED(micro LED)之顯示裝置亦被稱為微型LED顯示裝置。此外,微型LED之微型並不限定無機發光體100之大小。針對無機發光體100及無機發光元件102之構造,於後文敘述。Fig. 2 is a plan view showing a plurality of pixels in the first embodiment. As shown in FIG. 2, one pixel Pix includes a plurality of pixels 49. The pixels 49 each have an inorganic light-emitting body 100 provided with an inorganic light-emitting element 102. The phosphor 100 is an inorganic light-emitting diode (LED: Light Emitting Diodee) chip with a size of several μm or more and 300 μm or less when viewed from above. Generally speaking, a chip with a size of 100 μm or more is called a mini LED. (mini LED), the size of less than 100 μm ~ several μm is called micro LED (micro LED). In the present invention, LEDs of any size can be used as long as they are used separately according to the screen size (the size of one pixel) of the display device. A display device equipped with a micro LED (micro LED) in each pixel is also called a micro LED display device. In addition, the miniature size of the micro LED does not limit the size of the phosphor 100. The structure of the inorganic light-emitting body 100 and the inorganic light-emitting element 102 will be described later.

本實施形態之顯示裝置1具有像素PixA與像素PixB,作為像素Pix。例如,像素PixA具有:第1像素49R、第2像素49G、及第3像素49B。第1像素49R係發出第1波長頻帶之光之像素。於本實施形態中,由於第1波長頻帶之光係作為第1色之原色之紅色之光,故第1像素49R顯示作為第1色之原色之紅色。第2像素49G係發出與第1波長頻帶不同之第2波長頻帶之光之像素。於本實施形態中,由於第2波長頻帶之光係作為第2色之原色之綠色之光,故第2像素49G顯示作為第2色之原色之綠色。第3像素49B係發出與第1波長頻帶及第2波長頻帶不同之第3波長頻帶之光之像素。於本實施形態中,由於第3波長頻帶之光係作為第3色之原色之藍色之光,故第3像素49B顯示作為第3色之原色之藍色。此外,第1色、第2色、第3色各者並不限定於紅色、綠色、藍色,可選擇補色等任意色。亦即,第1波長頻帶、第2波長頻帶、第3波長頻帶並不限定於分別對應於紅色、綠色、藍色。又,如圖2所示,於1個像素PixA中,第1像素49R與第3像素49B於第1方向Dx排列。又,第2像素49G與第3像素49B於第2方向Dy排列。以下,將第1像素49R、第2像素49G、第3像素49B、後述之輔助像素49BB,於無須分別區別情形下,稱為像素49。此外,1個像素PixA中所含之像素49並不限定於3個,可與4個以上之像素49建立對應關係。例如,可包含將白色作為第4色而建立對應關係之第4像素49W。又,複數個像素49之配置並不限定於圖2所示之構成。例如,第1像素49R可與第2像素49G於第1方向Dx相鄰。又,第1像素49R、第2像素49G及第3像素49B可依序於第1方向Dx重複排列。The display device 1 of this embodiment has a pixel PixA and a pixel PixB as the pixel Pix. For example, the pixel PixA has a first pixel 49R, a second pixel 49G, and a third pixel 49B. The first pixel 49R is a pixel that emits light in the first wavelength band. In this embodiment, since the light of the first wavelength band is light of red which is the primary color of the first color, the first pixel 49R displays red which is the primary color of the first color. The second pixel 49G is a pixel that emits light in a second wavelength band different from the first wavelength band. In this embodiment, since the light of the second wavelength band is light of green which is the primary color of the second color, the second pixel 49G displays green which is the primary color of the second color. The third pixel 49B is a pixel that emits light in a third wavelength band different from the first wavelength band and the second wavelength band. In this embodiment, since the light of the third wavelength band is light of blue which is the primary color of the third color, the third pixel 49B displays blue which is the primary color of the third color. In addition, each of the first color, the second color, and the third color is not limited to red, green, and blue, and arbitrary colors such as complementary colors can be selected. That is, the first wavelength band, the second wavelength band, and the third wavelength band are not limited to correspond to red, green, and blue, respectively. Furthermore, as shown in FIG. 2, in one pixel PixA, the first pixel 49R and the third pixel 49B are arranged in the first direction Dx. In addition, the second pixel 49G and the third pixel 49B are arranged in the second direction Dy. Hereinafter, the first pixel 49R, the second pixel 49G, the third pixel 49B, and the auxiliary pixel 49BB, which will be described later, are referred to as the pixel 49 without distinction. In addition, the number of pixels 49 included in one pixel PixA is not limited to three, and a corresponding relationship can be established with four or more pixels 49. For example, it may include a fourth pixel 49W corresponding to white as the fourth color. In addition, the arrangement of the plurality of pixels 49 is not limited to the configuration shown in FIG. 2. For example, the first pixel 49R may be adjacent to the second pixel 49G in the first direction Dx. In addition, the first pixel 49R, the second pixel 49G, and the third pixel 49B may be sequentially and repeatedly arranged in the first direction Dx.

第1像素49R具有發出第1波長頻帶之光之第1單色無機發光體100RA,作為無機發光體100,第2像素49G具有發出第2波長頻帶之光之第2單色無機發光體100GA,作為無機發光體100,第3像素49B具有發出第3波長頻帶之光之第3單色無機發光體100BA,作為無機發光體100。第1單色無機發光體100RA包含第1單色無機發光元件102RA,作為無機發光元件102,第2單色無機發光體100GA包含第2單色無機發光元件102GA,作為無機發光元件102,第3單色無機發光體100BA包含第3單色無機發光元件102BA,作為無機發光元件102。第1單色無機發光體100RA(第1單色無機發光元件102RA)、第2單色無機發光體100GA(第2單色無機發光元件102GA)、及第3單色無機發光體100BA(第3單色無機發光元件102BA)可謂係發出單色且為互不相同之色之光之無機發光體100(無機發光元件102)。以下,將第1單色無機發光體100RA、第2單色無機發光體100GA、及第3單色無機發光體100BA,於不進行區別之情形下,記載為單色無機發光體100A。同樣地,將第1單色無機發光元件102RA、第2單色無機發光元件102GA、及第3單色無機發光元件102BA,於不進行區別之情形下,記載為單色無機發光元件102A。單色無機發光體100A可謂具備發出特定之波長頻帶之光之1種單色無機發光元件102A。The first pixel 49R has a first monochromatic phosphor 100RA that emits light in the first wavelength band, as the phosphor 100, and the second pixel 49G has a second monochromatic phosphor 100GA that emits light in the second wavelength band, As the phosphor 100, the third pixel 49B has a third monochromatic phosphor 100BA that emits light in the third wavelength band, as the phosphor 100. The first single-color phosphor 100RA includes the first single-color phosphor 102RA as the inorganic light-emitting element 102, and the second single-color phosphor 100GA includes the second single-color phosphor 102GA as the inorganic light-emitting element 102, and the third The monochromatic phosphor 100BA includes the third monochromatic inorganic light emitting element 102BA as the inorganic light emitting element 102. The first single-color phosphor 100RA (the first single-color phosphor 102RA), the second single-color phosphor 100GA (the second single-color phosphor 102GA), and the third single-color phosphor 100BA (the third The monochromatic inorganic light-emitting element 102BA) can be described as an inorganic light-emitting body 100 (inorganic light-emitting element 102) that emits light of a single color and different colors. Hereinafter, the first monochromatic phosphor 100RA, the second monochromatic phosphor 100GA, and the third monochromatic phosphor 100BA will be referred to as the monochromatic phosphor 100A without distinction. Similarly, the first single-color inorganic light-emitting element 102RA, the second single-color inorganic light-emitting element 102GA, and the third single-color inorganic light-emitting element 102BA are referred to as the single-color inorganic light-emitting element 102A without distinction. The monochromatic inorganic light-emitting body 100A can be said to include one type of monochromatic inorganic light-emitting element 102A that emits light in a specific wavelength band.

如此,像素PixA具有分別顯示單色之色之第1像素49R、第2像素49G、及第3像素49B。將第1像素49R、第2像素49G、第3像素49B,於不進行區別之情形下,記載為單色像素49A。單色像素49A可為具備發出特定之波長頻帶之光之1種無機發光體100(無機發光元件102)。像素PixA具有3個單色像素49A,另一方面,像素PixB具有單色像素49A與輔助像素49BB。更具體而言,像素PixB具有2個單色像素49A、及1個輔助像素49BB。於圖2之例中,像素PixB具備:作為2個單色像素49A之第2像素49G及第3像素49B、及1個輔助像素49BB。In this way, the pixel PixA has a first pixel 49R, a second pixel 49G, and a third pixel 49B that respectively display a single color. The first pixel 49R, the second pixel 49G, and the third pixel 49B are referred to as a monochrome pixel 49A unless they are distinguished. The monochromatic pixel 49A may be provided with one type of phosphor 100 (inorganic light-emitting element 102) that emits light in a specific wavelength band. The pixel PixA has three monochromatic pixels 49A. On the other hand, the pixel PixB has monochromatic pixels 49A and auxiliary pixels 49BB. More specifically, the pixel PixB has two monochrome pixels 49A and one auxiliary pixel 49BB. In the example of FIG. 2, the pixel PixB includes a second pixel 49G and a third pixel 49B as two monochromatic pixels 49A, and one auxiliary pixel 49BB.

輔助像素49BB具備輔助無機發光體100B。輔助無機發光體100B具備複數種輔助無機發光元件102B,作為無機發光元件102。輔助無機發光元件102B係於被供給用於發光之電流(與後述之陽極電源電位PVDD相應之電流)之情形下發光之無機發光元件102。各個輔助無機發光元件102B於被供給用於發光之電流之情形下,發出之光之波長頻帶互不相同。具體而言,輔助無機發光體100B具備第1輔助無機發光元件102RB、第2輔助無機發光元件102GB、及第3輔助無機發光元件102BB,作為輔助無機發光元件102B。第1輔助無機發光元件102RB於被供給用於發光之電流之情形下,發出第1波長頻帶之光。第2輔助無機發光元件102GB於被供給用於發光之電流之情形下,發出第2波長頻帶之光。第3輔助無機發光元件102BB於被供給用於發光之電流之情形下,發出第3波長頻帶之光。The auxiliary pixel 49BB includes an auxiliary phosphor 100B. The auxiliary phosphor 100B includes a plurality of auxiliary inorganic light-emitting elements 102B as the inorganic light-emitting element 102. The auxiliary inorganic light-emitting element 102B is the inorganic light-emitting element 102 that emits light when a current for emitting light (a current corresponding to the anode power supply potential PVDD described later) is supplied. When each auxiliary inorganic light emitting element 102B is supplied with a current for emitting light, the wavelength band of the light emitted is different from each other. Specifically, the auxiliary phosphor 100B includes a first auxiliary phosphor 102RB, a second auxiliary phosphor 102GB, and a third auxiliary phosphor 102BB as the auxiliary phosphor 102B. The first auxiliary inorganic light emitting element 102RB emits light in the first wavelength band when a current for emitting light is supplied. The second auxiliary inorganic light emitting element 102GB emits light in the second wavelength band when a current for emitting light is supplied. The third auxiliary inorganic light emitting element 102BB emits light in the third wavelength band when a current for emitting light is supplied.

輔助無機發光體100B(輔助像素49BB)於第1輔助無機發光元件102RB、第2輔助無機發光元件102GB、及第3輔助無機發光元件102BB全部發光之情形下,發出第1波長頻帶、第2波長頻帶及第3波長頻帶之光重疊而成之白色之光。惟,輔助無機發光體100B僅複數種輔助無機發光元件102B中之一部分成為可供給用於發光之電流之狀態、換言之成為可發光之狀態。因此,輔助無機發光體100B實際上不發出白色之光,僅發出成為可發光之狀態之一部分之輔助無機發光元件102B之波長頻帶之光。具體而言,輔助無機發光體100B由於在複數種輔助無機發光元件102B中僅1種輔助無機發光元件102B成為可發光之狀態,故發出第1波長頻帶、第2波長頻帶、第3波長頻帶中之1個波長頻帶之光。於圖2之例中,輔助無機發光體100B(輔助像素49BB)由於在第1輔助無機發光元件102RB、第2輔助無機發光元件102GB、及第3輔助無機發光元件102BB中僅第1輔助無機發光元件102RB成為可發光之狀態,故發出由第1輔助無機發光元件102RB發出之第1波長頻帶之光(第1色之光)。The auxiliary phosphor 100B (auxiliary pixel 49BB) emits the first wavelength band and the second wavelength when all of the first auxiliary phosphor 102RB, the second auxiliary phosphor 102GB, and the third auxiliary phosphor 102BB emit light White light formed by superimposing light in the third wavelength band and the third wavelength band. However, only a part of the auxiliary phosphor 100B of the plurality of auxiliary phosphors 102B is in a state in which current for light emission can be supplied, in other words, in a state in which light can be emitted. Therefore, the auxiliary phosphor 100B does not actually emit white light, but only emits light in the wavelength band of the auxiliary phosphor 102B, which is a part of the light-emitting state. Specifically, the auxiliary phosphor 100B emits light among the first, second, and third wavelength bands because only one of the auxiliary inorganic light-emitting elements 102B of the plurality of auxiliary inorganic light-emitting elements 102B can emit light. The light of 1 wavelength band. In the example of FIG. 2, the auxiliary phosphor 100B (auxiliary pixel 49BB) is because only the first auxiliary inorganic light-emitting element 102RB, the second auxiliary inorganic light-emitting element 102GB, and the third auxiliary inorganic light-emitting element 102BB The element 102RB is in a state capable of emitting light, and therefore emits light of the first wavelength band (light of the first color) emitted by the first auxiliary inorganic light emitting element 102RB.

如此,於圖2之例中,像素PixB具備:發出第2波長頻帶之光之第2像素49G(第2單色無機發光體100GA)、發出第3波長頻帶之光之第3像素49B(第3單色無機發光體100BA)、及發出第1波長頻帶之光之輔助像素49BB(輔助無機發光體100B)。輔助無機發光體100B(輔助像素49BB)可謂發出與包含於相同之像素PixB之單色無機發光體100A(單色像素49A)不同之波長頻帶之光之輔助無機發光元件102B(此處為第1輔助無機發光元件102RB),成為可發光之狀態。而且,輔助無機發光體100B(輔助像素49BB)可謂發出與包含於相同之像素PixB之單色無機發光體100A(單色像素49A)相同之波長頻帶之光之輔助無機發光元件102B(此處為第2輔助無機發光元件102GB及第3輔助無機發光元件102BB),成為無法發光之狀態、亦即無法供給用於發光之電流之狀態。In this way, in the example of FIG. 2, the pixel PixB includes a second pixel 49G (second monochromatic phosphor 100GA) that emits light in the second wavelength band, and a third pixel 49B (second 3 Monochromatic phosphor 100BA), and auxiliary pixel 49BB (auxiliary phosphor 100B) that emits light in the first wavelength band. The auxiliary phosphor 100B (auxiliary pixel 49BB) can be described as the auxiliary phosphor 102B (herein the first The auxiliary inorganic light emitting element 102RB) becomes a state capable of emitting light. Moreover, the auxiliary phosphor 100B (auxiliary pixel 49BB) can be described as an auxiliary phosphor 102B (herein The second auxiliary inorganic light-emitting element 102GB and the third auxiliary inorganic light-emitting element 102BB) are in a state where they cannot emit light, that is, a state where electric current for light emission cannot be supplied.

如以上所示般,顯示裝置1包含像素PixA與像素PixB,作為像素Pix。像素PixA係於本身所含之單色無機發光體100A未產生不良,所有單色無機發光體100A均未被換裝而保留之像素。另一方面,像素PixB係因檢測到於本身所含之單色無機發光體100A產生不良,而將產生不良之單色無機發光體100A換裝為輔助無機發光體100B之像素。此外,於圖2之例中,為便於說明,像素PixA為3個,像素PixB成為1個,但像素PixA及像素PixB之排列順序及數目,由於依存於在哪一像素Pix產生不良,故為任意。As shown above, the display device 1 includes the pixel PixA and the pixel PixB as the pixel Pix. The pixel PixA is a pixel that has no defects in the monochromatic phosphor 100A contained in the pixel PixA, and all the monochromatic phosphors 100A have not been replaced and remain pixels. On the other hand, the pixel PixB is a pixel in which the defective monochromatic phosphor 100A is replaced with the auxiliary phosphor 100B due to the detection of the defect in the monochromatic phosphor 100A contained in the pixel PixB. In addition, in the example of FIG. 2, for convenience of explanation, there are three pixels PixA and one pixel PixB. However, the arrangement order and number of pixels PixA and pixels PixB depend on which pixel Pix produces a defect, so it is Arbitrary.

圖3及圖4係對顯示裝置之像素電路之構成例予以顯示之電路圖。圖3係顯示連接於作為無機發光體100之單色無機發光體100A之電路構成,圖4係顯示連接於作為無機發光體100之輔助無機發光體100B之電路構成。3 and 4 are circuit diagrams showing examples of the structure of the pixel circuit of the display device. FIG. 3 shows the circuit configuration connected to the monochromatic phosphor 100A as the phosphor 100, and FIG. 4 shows the circuit configuration connected to the auxiliary phosphor 100B as the phosphor 100.

如圖3所示,像素電路PICA設置於第1像素49R、第2像素49G及第3像素49B各者。像素電路PICA係設置於基板10,將驅動信號(電流)供給至無機發光體100之電路。此外,於圖3中,針對像素電路PICA之說明可應用於第1像素49R、第2像素49G及第3像素49B各者所具有之像素電路PICA。As shown in FIG. 3, the pixel circuit PICA is provided in each of the first pixel 49R, the second pixel 49G, and the third pixel 49B. The pixel circuit PICA is provided on the substrate 10 and supplies a driving signal (current) to the circuit of the inorganic light-emitting body 100. In addition, in FIG. 3, the description of the pixel circuit PICA can be applied to the pixel circuit PICA of each of the first pixel 49R, the second pixel 49G, and the third pixel 49B.

如圖3所示,像素電路PICA包含:無機發光體100、5個電晶體、及2個電容。具體而言,像素電路PICA包含:發光控制電晶體BCT、初始化電晶體IST、寫入電晶體SST、重置電晶體RST及驅動電晶體DRT。一部分之電晶體可由相鄰之複數個像素49共有。例如,發光控制電晶體BCT可經由共通配線由3個像素49共有。又,重置電晶體RST設置於周邊區域GA,例如可就像素49之各列設置1個。此情形下,重置電晶體RST經由共通配線連接於複數個驅動電晶體DRT之汲極。惟,重置電晶體RST可連接於驅動電晶體DRT之源極。As shown in FIG. 3, the pixel circuit PICA includes an inorganic light-emitting body 100, 5 transistors, and 2 capacitors. Specifically, the pixel circuit PICA includes: a light-emitting control transistor BCT, an initialization transistor IST, a writing transistor SST, a reset transistor RST, and a driving transistor DRT. A part of the transistor can be shared by a plurality of adjacent pixels 49. For example, the light emission control transistor BCT can be shared by three pixels 49 via a common wiring. In addition, the reset transistor RST is disposed in the peripheral area GA, for example, one reset transistor RST may be disposed for each column of the pixel 49. In this case, the reset transistor RST is connected to the drains of a plurality of driving transistors DRT via a common wiring. However, the reset transistor RST can be connected to the source of the drive transistor DRT.

像素電路PICA所具有之複數個電晶體分別由n型TFT(Thin Film Transistor,薄膜電晶體)構成。惟,並不限定於此,各電晶體可分別由p型TFT構成。於使用p型TFT之情形下,可適宜地使電源電位或保持電容Cs1及電容Cs2之連接適配。The plurality of transistors of the pixel circuit PICA are respectively composed of n-type TFTs (Thin Film Transistors). However, it is not limited to this, and each transistor may be composed of p-type TFTs. In the case of using a p-type TFT, the power supply potential or the connection between the holding capacitor Cs1 and the capacitor Cs2 can be appropriately adapted.

發光控制掃描線BG連接於發光控制電晶體BCT之閘極。初始化控制掃描線IG連接於初始化電晶體IST之閘極。寫入控制掃描線SG連接於寫入電晶體SST之閘極。重置控制掃描線RG連接於重置電晶體RST之閘極。The light emission control scan line BG is connected to the gate of the light emission control transistor BCT. The initialization control scan line IG is connected to the gate of the initialization transistor IST. The write control scan line SG is connected to the gate of the write transistor SST. The reset control scan line RG is connected to the gate of the reset transistor RST.

發光控制掃描線BG、初始化控制掃描線IG、寫入控制掃描線SG及重置控制掃描線RG分別連接於驅動電路12(參照圖1)。驅動電路12對發光控制掃描線BG、初始化控制掃描線IG、寫入控制掃描線SG及重置控制掃描線RG分別供給發光控制信號Vbg、初始化控制信號Vig、寫入控制信號Vsg及重置控制信號Vrg。The light emission control scan line BG, the initialization control scan line IG, the write control scan line SG, and the reset control scan line RG are respectively connected to the driving circuit 12 (refer to FIG. 1). The drive circuit 12 respectively supplies the light emission control signal Vbg, the initialization control signal Vig, the write control signal Vsg and the reset control to the light emission control scan line BG, the initialization control scan line IG, the write control scan line SG, and the reset control scan line RG. Signal Vrg.

驅動IC 210(參照圖1)對第1像素49R、第2像素49G及第3像素49B各者之像素電路PICA分時供給影像信號Vsig。於第1像素49R、第2像素49G及第3像素49B之各行與驅動IC 210之間設置多工器等開關電路。影像信號Vsig經由影像信號線L2被供給至寫入電晶體SST。又,驅動IC 210經由重置信號線L3將重置電源電位Vrst供給至重置電晶體RST。驅動IC 210經由初始化信號線L4將初始化電位Vini供給至初始化電晶體IST。The driver IC 210 (refer to FIG. 1) supplies the image signal Vsig to the pixel circuit PICA of each of the first pixel 49R, the second pixel 49G, and the third pixel 49B in a time-division manner. A switch circuit such as a multiplexer is provided between each row of the first pixel 49R, the second pixel 49G, and the third pixel 49B and the driving IC 210. The video signal Vsig is supplied to the write transistor SST via the video signal line L2. In addition, the driving IC 210 supplies the reset power supply potential Vrst to the reset transistor RST via the reset signal line L3. The driving IC 210 supplies the initialization potential Vini to the initialization transistor IST via the initialization signal line L4.

發光控制電晶體BCT、初始化電晶體IST、寫入電晶體SST、及重置電晶體RST作為選擇2節點間之導通與非導通之開關元件發揮功能。驅動電晶體DRT作為相應於閘極與汲極之間之電壓,控制於無機發光體100中流通之電流之電流控制元件發揮功能。The light-emitting control transistor BCT, the initialization transistor IST, the write transistor SST, and the reset transistor RST function as switching elements that select conduction and non-conduction between the two nodes. The driving transistor DRT functions as a current control element corresponding to the voltage between the gate and the drain, and controls the current flowing in the phosphor 100.

無機發光體100之陰極(陰極電極114)連接於陰極電源線L10。又,無機發光體100之陽極(陽極端子112)經由驅動電晶體DRT及發光控制電晶體BCT連接於陽極電源線L1(第1電源線)。於陽極電源線L1被供給陽極電源電位PVDD(第1電位)。於陰極電源線L10被供陰極電源電位PVSS(第2電位)。陽極電源電位PVDD係高於陰極電源電位PVSS之電位。陰極電源線L10包含陰極配線60。The cathode (cathode electrode 114) of the phosphor 100 is connected to the cathode power supply line L10. In addition, the anode (anode terminal 112) of the phosphor 100 is connected to the anode power supply line L1 (first power supply line) via the drive transistor DRT and the light emission control transistor BCT. The anode power supply potential PVDD (first potential) is supplied to the anode power supply line L1. The cathode power supply potential PVSS (second potential) is supplied to the cathode power supply line L10. The anode power supply potential PVDD is higher than the cathode power supply potential PVSS. The cathode power supply line L10 includes a cathode wiring 60.

又,像素電路PICA包含電容Cs1及電容Cs2。電容Cs1為形成於驅動電晶體DRT之閘極與源極之間之保持電容。電容Cs2為形成於驅動電晶體DRT之源極及無機發光體100之陽極與陰極電源線L10之間之附加電容。In addition, the pixel circuit PICA includes a capacitor Cs1 and a capacitor Cs2. The capacitor Cs1 is a holding capacitor formed between the gate and the source of the driving transistor DRT. The capacitor Cs2 is an additional capacitor formed between the source of the driving transistor DRT and the anode of the phosphor 100 and the cathode power line L10.

此外,像素電路PICA可於發光控制電晶體BCT與驅動電晶體DRT之間,設置電晶體CCT。此情形下,電晶體CCT之源極連接於發光控制電晶體BCT之汲極,電晶體CCT之汲極連接於驅動電晶體DRT之源極。而且,於電晶體CCT之閘極,連接對電晶體CCT之閘極供給電位之配線CG。藉由經由配線CG對電晶體CCT之閘極供給電位,而將發光控制電晶體BCT之汲極與驅動電晶體DRT之源極設為導通狀態,於未經由配線CG對電晶體CCT之閘極供給電位之情形下,將發光控制電晶體BCT之汲極與驅動電晶體DRT之源極設為非導通狀態。In addition, the pixel circuit PICA can provide a transistor CCT between the light-emitting control transistor BCT and the driving transistor DRT. In this case, the source of the transistor CCT is connected to the drain of the light-emitting control transistor BCT, and the drain of the transistor CCT is connected to the source of the driving transistor DRT. Furthermore, the gate of the transistor CCT is connected to a wiring CG that supplies a potential to the gate of the transistor CCT. By supplying a potential to the gate of the transistor CCT through the wiring CG, the drain of the light-emitting control transistor BCT and the source of the driving transistor DRT are set to a conductive state, so that the gate of the transistor CCT is not connected by the wiring CG When the potential is supplied, the drain of the light-emitting control transistor BCT and the source of the driving transistor DRT are set to a non-conducting state.

顯示裝置1自第1列之像素49至最終列之像素49進行驅動,於1圖框期間顯示1圖框份之圖像。The display device 1 drives from the pixels 49 in the first column to the pixels 49 in the final column, and displays an image of one frame during one frame period.

於重置期間,藉由自驅動電路12供給之各控制信號,而發光控制掃描線BG之電位成為L(低)位準,重置控制掃描線RG之電位成為H(高)位準。藉此,發光控制電晶體BCT變為關斷(非導通狀態),重置電晶體RST變為導通(導通狀態)。During the reset period, by the control signals supplied from the driving circuit 12, the electric potential of the light-emitting control scan line BG becomes the L (low) level, and the electric potential of the reset control scan line RG becomes the H (high) level. Thereby, the light emission control transistor BCT becomes off (non-conducting state), and the reset transistor RST becomes conducting (conducting state).

藉此,殘留於像素49內之電荷經由重置電晶體RST朝外部流通,驅動電晶體DRT之源極固定在重置電源電位Vrst。重置電源電位Vrst對於陰極電源電位PVSS具有特定之電位差而設定。此情形下,重置電源電位Vrst與陰極電源電位PVSS之電位差小於無機發光體100開始發光之電位差。Thereby, the electric charge remaining in the pixel 49 flows to the outside through the reset transistor RST, and the source of the drive transistor DRT is fixed at the reset power potential Vrst. The reset power supply potential Vrst is set to have a specific potential difference with respect to the cathode power supply potential PVSS. In this case, the potential difference between the reset power supply potential Vrst and the cathode power supply potential PVSS is smaller than the potential difference at which the phosphor 100 starts to emit light.

其次,藉由自驅動電路12供給之各控制信號,而初始化控制掃描線IG之電位成為H位準。初始化電晶體IST變為導通。經由初始化電晶體IST,驅動電晶體DRT之閘極被固定在初始化電位Vini。Next, by the control signals supplied from the driving circuit 12, the potential of the initial control scan line IG becomes the H level. The initialization transistor IST becomes conductive. Through the initialization transistor IST, the gate of the driving transistor DRT is fixed at the initialization potential Vini.

其次,藉由自驅動電路12供給之各控制信號,而初始化控制掃描線IG之電位成為H位準。初始化電晶體IST變為導通。經由初始化電晶體IST,驅動電晶體DRT之閘極被固定在初始化電位Vini。Next, by the control signals supplied from the driving circuit 12, the potential of the initial control scan line IG becomes the H level. The initialization transistor IST becomes conductive. Through the initialization transistor IST, the gate of the driving transistor DRT is fixed at the initialization potential Vini.

又,驅動電路12將發光控制電晶體BCT設為導通,將重置電晶體RST設為關斷。驅動電晶體DRT當源極電位成為(Vini-Vth)時,變為關斷。藉此,可就每一像素49取得驅動電晶體DRT之臨限值電壓Vth,每一像素49之臨限值電壓Vth之不均一被抵消In addition, the drive circuit 12 turns on the light emission control transistor BCT and turns off the reset transistor RST. When the source potential of the driving transistor DRT becomes (Vini-Vth), it becomes off. In this way, the threshold voltage Vth of the driving transistor DRT can be obtained for each pixel 49, and the unevenness of the threshold voltage Vth of each pixel 49 is cancelled.

其次,於影像信號寫入動作期間,藉由自驅動電路12供給之各控制信號,而發光控制電晶體BCT變為關斷,初始化電晶體IST變為關斷,寫入電晶體SST變為導通。於屬1列之像素49中,影像信號Vsig朝驅動電晶體DRT之閘極輸入。影像信號線L2於第2方向Dy延伸,連接於屬同行之複數列像素49。因而,影像信號寫入動作期間就每一1列實施。Secondly, during the image signal writing operation period, by the control signals supplied from the drive circuit 12, the light-emitting control transistor BCT is turned off, the initialization transistor IST is turned off, and the writing transistor SST is turned on. . In the pixels 49 belonging to one column, the image signal Vsig is input to the gate of the driving transistor DRT. The image signal line L2 extends in the second direction Dy and is connected to a plurality of rows of pixels 49 belonging to the same line. Therefore, the video signal writing operation period is performed for each row.

其次,於發光動作期間。藉由自驅動電路12供給之各控制信號,而發光控制電晶體BCT變為導通,寫入電晶體SST變為關斷。自陽極電源線L1經由發光控制電晶體BCT對驅動電晶體DRT供給陽極電源電位PVDD。驅動電晶體DRT將與閘極源極間之電壓相應之電流供給至無機發光體100。無機發光體100以與該電流相應之亮度發光。Secondly, during the light-emitting action. By the control signals supplied from the driving circuit 12, the light-emitting control transistor BCT is turned on, and the writing transistor SST is turned off. The anode power supply potential PVDD is supplied to the driving transistor DRT from the anode power supply line L1 via the light emission control transistor BCT. The driving transistor DRT supplies a current corresponding to the voltage between the gate and the source to the phosphor 100. The phosphor 100 emits light with a brightness corresponding to the current.

此外,驅動電路12可就每1列驅動像素49,亦可同時驅動2列像素49,還可同時驅動3列份以上之像素49。In addition, the driving circuit 12 can drive the pixels 49 for each column, can also drive two columns of pixels 49 at the same time, and can also drive more than three columns of pixels 49 at the same time.

此外,上述之圖3所示之像素電路PICA之構成終極而言僅為一個例子,可適宜地變更。例如於1個像素49中之配線之數目及電晶體之數目可不同。又,像素電路PICA亦可採用電流鏡電路等之構成。In addition, the above-mentioned configuration of the pixel circuit PICA shown in FIG. 3 is ultimately only an example, and can be changed as appropriate. For example, the number of wires and the number of transistors in one pixel 49 may be different. In addition, the pixel circuit PICA may also adopt a structure such as a current mirror circuit.

如圖3所示,單色無機發光體100A包含1種單色無機發光元件102A,另一方面,如圖4所示,輔助無機發光體100B包含複數種輔助無機發光元件102B。如圖4所示,輔助無機發光體100B之輔助無機發光元件102B並排排列。而且,複數個輔助無機發光元件102B中之1個輔助無機發光元件102B(此處為第1輔助無機發光元件102RB),藉由連接於陰極電源線L10,而被供給用於發光之電流、亦即與陽極電源電位PVDD相應之電流,而發光。另一方面,複數個輔助無機發光元件102B中其他之輔助無機發光元件102B(此處為第2無機發光元件102GB及第3輔助無機發光元件102BB),藉由與陰極電源線L10成為非連接,而未被供給用於發光之電流、亦即與陽極電源電位PVDD相應之電流,而不發光。此外,雖然於後文詳細敘述,但第1輔助無機發光元件102RB藉由連接於對向陰極電極90e,而連接於陰極電源線L10,成為可發光之狀態,第2無機發光元件102GB及第3輔助無機發光元件102BB藉由與對向陰極電極90e成為非連接,而與陰極電源線L10成為非連接,成為無法發光之狀態。As shown in FIG. 3, the monochromatic phosphor 100A includes one type of monochromatic inorganic light-emitting element 102A. On the other hand, as shown in FIG. 4, the auxiliary phosphor 100B includes a plurality of kinds of auxiliary inorganic light-emitting elements 102B. As shown in FIG. 4, the auxiliary phosphors 102B of the auxiliary phosphor 100B are arranged side by side. Furthermore, one of the auxiliary inorganic light-emitting elements 102B (here, the first auxiliary inorganic light-emitting element 102RB) among the plurality of auxiliary inorganic light-emitting elements 102B is connected to the cathode power supply line L10 to be supplied with a current for light emission. That is, the current corresponding to the anode power supply potential PVDD emits light. On the other hand, the other auxiliary inorganic light-emitting elements 102B (here, the second inorganic light-emitting element 102GB and the third auxiliary inorganic light-emitting element 102BB) among the plurality of auxiliary inorganic light-emitting elements 102B are disconnected from the cathode power supply line L10, The current for light emission, that is, the current corresponding to the anode power supply potential PVDD is not supplied, and no light is emitted. In addition, although described in detail later, the first auxiliary inorganic light-emitting element 102RB is connected to the opposite cathode electrode 90e and connected to the cathode power supply line L10 to be able to emit light. The second inorganic light-emitting element 102GB and the third inorganic light-emitting element 102GB The auxiliary inorganic light emitting element 102BB is disconnected from the counter cathode electrode 90e and disconnected from the cathode power supply line L10, so that it cannot emit light.

圖5係圖1之V-V’剖視圖。如圖5所示,顯示裝置1之陣列基板2具備基板10、及複數個電晶體。基板10具有:第1面10a、及第1面10a之相反側之第2面10b。基板10係絕緣基板,例如係玻璃基板、石英基板、或丙烯酸系樹脂、環氧樹脂、聚醯亞胺樹脂、抑或聚對苯二甲酸乙二酯(PET)樹脂製之撓性基板。Fig. 5 is a cross-sectional view taken along the line V-V' of Fig. 1; As shown in FIG. 5, the array substrate 2 of the display device 1 includes a substrate 10 and a plurality of transistors. The substrate 10 has a first surface 10a and a second surface 10b on the opposite side of the first surface 10a. The substrate 10 is an insulating substrate, for example, a glass substrate, a quartz substrate, or a flexible substrate made of acrylic resin, epoxy resin, polyimide resin, or polyethylene terephthalate (PET) resin.

此外,在本說明書中,於垂直於基板10之表面之方向上,將自基板10朝向無機發光體100之方向設為「上側」或簡單設為「上」。又,將自無機發光體100朝向基板10之方向設為「下側」或簡單設為「下」。又,在表現於某一構造體之上配置另一構造體之態樣時,在簡單記述為「於…上」之情形下,只要無特別之說明,則包含以下兩種情形,即:以與某一構造體相接之方式在正上方配置另一構造體之情形、及在某一構造體之上方進一步介隔其他之構造體而配置另一構造體之情形。In addition, in this specification, in the direction perpendicular to the surface of the substrate 10, the direction from the substrate 10 to the phosphor 100 is referred to as "upper side" or simply "upper". In addition, the direction from the inorganic light-emitting body 100 to the substrate 10 is referred to as "lower side" or simply referred to as "lower". In addition, when expressing the state of arranging another structure on one structure, in the case of simply describing it as "on", as long as there is no special explanation, the following two situations are included, namely: When connecting to a certain structure, another structure is placed directly above, and another structure is placed above a certain structure with another structure interposed therebetween.

底塗層20設置於基板10之第1面10a上。此外,可於基板10之第1面10a上,設置遮光層。此情形下,底塗層20覆蓋遮光層。遮光層雖然若為遮斷光者,則可為任意之材料,但可為例如鉬鎢合金膜。The primer layer 20 is provided on the first surface 10a of the substrate 10. In addition, a light shielding layer may be provided on the first surface 10a of the substrate 10. In this case, the primer layer 20 covers the light-shielding layer. The light-shielding layer may be any material if it is a light-shielding layer, but it may be, for example, a molybdenum-tungsten alloy film.

複數個電晶體設置於底塗層20上。例如,於基板10之顯示區域AA,分別設置像素49中所含之驅動電晶體DRT及寫入電晶體SST,作為複數個電晶體。於基板10之周邊區域GA,設置驅動電路12中所含之電晶體TrC,作為複數個電晶體。此外,雖然顯示複數個電晶體中之驅動電晶體DRT、寫入電晶體SST、及電晶體TrC,但像素電路PICA中所含之發光控制電晶體BCT、初始化電晶體IST及重置電晶體RST亦具有與驅動電晶體DRT同樣之積層構造。此外,在以下之說明中,將複數個電晶體於無須區別說明之情形下,簡單表示為電晶體Tr。A plurality of transistors are arranged on the undercoat layer 20. For example, in the display area AA of the substrate 10, the driving transistor DRT and the writing transistor SST included in the pixel 49 are respectively provided as a plurality of transistors. In the peripheral area GA of the substrate 10, the transistor TrC included in the driving circuit 12 is provided as a plurality of transistors. In addition, although the driving transistor DRT, the writing transistor SST, and the transistor TrC among the plurality of transistors are displayed, the light-emitting control transistor BCT, the initialization transistor IST, and the reset transistor RST included in the pixel circuit PICA are displayed. It also has the same layered structure as the drive transistor DRT. In addition, in the following description, a plurality of transistors are simply expressed as transistor Tr without distinguishing them.

電晶體Tr為例如雙面閘極構造之TFT。電晶體Tr分別具有:第1閘極電極21、第2閘極電極31、半導體層25、源極電極41s、及汲極電極41d。第1閘極電極21設置於底塗層20上。絕緣膜24設置於底塗層20上,且覆蓋第1閘極電極21。半導體層25設置於絕緣膜24上。半導體層25使用例如多晶矽。惟,半導體層25並不限定於此,可為微晶氧化物半導體、非晶氧化物半導體、低溫多晶矽等。絕緣膜29設置於半導體層25上。第2閘極電極31設置於絕緣膜29上。The transistor Tr is, for example, a TFT with a double-sided gate structure. The transistor Tr has a first gate electrode 21, a second gate electrode 31, a semiconductor layer 25, a source electrode 41s, and a drain electrode 41d. The first gate electrode 21 is provided on the undercoat layer 20. The insulating film 24 is provided on the undercoat layer 20 and covers the first gate electrode 21. The semiconductor layer 25 is provided on the insulating film 24. The semiconductor layer 25 uses, for example, polysilicon. However, the semiconductor layer 25 is not limited to this, and may be microcrystalline oxide semiconductor, amorphous oxide semiconductor, low-temperature polysilicon, or the like. The insulating film 29 is provided on the semiconductor layer 25. The second gate electrode 31 is provided on the insulating film 29.

底塗層20、絕緣膜24、29、45係無機絕緣膜,例如包含氧化矽(SiO2 )或氮化矽(SiN)等。於第3方向Dz上,第1閘極電極21與第2閘極電極31介隔絕緣膜24、半導體層25及絕緣膜29而對向。於絕緣膜24、29中,夾在第1閘極電極21與第2閘極電極31之間之部分作為閘極絕緣膜發揮功能。又,於半導體層25中,夾在第1閘極電極21與第2閘極電極31之間之部分成為電晶體Tr之通道區域27。於半導體層25中,與源極電極41s連接之部分為電晶體Tr之源極區域,與汲極電極41d連接之部分為電晶體Tr之汲極區域。於通道區域27與源極區域之間、及通道區域27與汲極區域之間,分別設置低濃度雜質區域。此外,作為電晶體Tr,雖然僅顯示n型TFT,但亦可同時形成p型TFT。The undercoat layer 20, the insulating films 24, 29, and 45 are inorganic insulating films, such as silicon oxide (SiO 2 ) or silicon nitride (SiN). In the third direction Dz, the first gate electrode 21 and the second gate electrode 31 are opposed to each other via the insulating film 24, the semiconductor layer 25, and the insulating film 29. In the insulating films 24 and 29, the part sandwiched between the first gate electrode 21 and the second gate electrode 31 functions as a gate insulating film. In addition, in the semiconductor layer 25, the portion sandwiched between the first gate electrode 21 and the second gate electrode 31 becomes the channel region 27 of the transistor Tr. In the semiconductor layer 25, the part connected to the source electrode 41s is the source region of the transistor Tr, and the part connected to the drain electrode 41d is the drain region of the transistor Tr. Between the channel region 27 and the source region, and between the channel region 27 and the drain region, low-concentration impurity regions are respectively provided. In addition, as the transistor Tr, although only n-type TFTs are shown, p-type TFTs may also be formed at the same time.

閘極線31a連接於驅動電晶體DRT之第2閘極電極31。於基板10與閘極線31a之間設置絕緣膜29,於閘極線31a與基板10之間形成電容CS。第1閘極電極21、第2閘極電極31及閘極線31a係由例如鋁(Al)、銅(Cu)、銀(Ag)、鉬(Mo)或其等之合金膜構成。The gate line 31a is connected to the second gate electrode 31 of the driving transistor DRT. An insulating film 29 is provided between the substrate 10 and the gate line 31 a, and a capacitor CS is formed between the gate line 31 a and the substrate 10. The first gate electrode 21, the second gate electrode 31, and the gate wire 31a are made of, for example, aluminum (Al), copper (Cu), silver (Ag), molybdenum (Mo), or alloy films thereof.

於本實施形態中,電晶體Tr並不限定於雙面閘極構造。電晶體Tr可為閘極電極僅由第1閘極電極21構成之底部閘極型。又,電晶體Tr可為閘極電極僅由第2閘極電極31構成之頂部閘極型。又,亦可省去底塗層20。In this embodiment, the transistor Tr is not limited to the double-sided gate structure. The transistor Tr may be a bottom gate type in which the gate electrode is composed of only the first gate electrode 21. In addition, the transistor Tr may be a top gate type in which the gate electrode is composed of only the second gate electrode 31. In addition, the primer layer 20 may be omitted.

顯示裝置1具有絕緣膜35,該絕緣膜35設置於基板10之第1面10a上,且覆蓋複數個電晶體Tr。源極電極41s設置於絕緣膜35上,經由設置於絕緣膜35之貫通孔而連接於複數個電晶體Tr之各源極。汲極電極41d設置於絕緣膜35上,經由設置於絕緣膜35之貫通孔而連接於複數個電晶體Tr之各汲極。於周邊區域GA中,陰極配線60設置於絕緣膜35上。絕緣膜42覆蓋源極電極41s、汲極電極41d及陰極配線60。絕緣膜35為無機絕緣膜,絕緣膜42為有機絕緣膜。源極電極41s及汲極電極41d係由鈦與鋁之積層構造、即TiAlTi或TiAl之積層膜構成。又,絕緣膜42使用感光性丙烯酸等有機材料。The display device 1 has an insulating film 35 which is provided on the first surface 10a of the substrate 10 and covers a plurality of transistors Tr. The source electrode 41 s is provided on the insulating film 35, and is connected to the respective sources of the plurality of transistors Tr through through holes provided in the insulating film 35. The drain electrode 41d is provided on the insulating film 35, and is connected to the drains of the plurality of transistors Tr through through holes provided in the insulating film 35. In the peripheral area GA, the cathode wiring 60 is provided on the insulating film 35. The insulating film 42 covers the source electrode 41 s, the drain electrode 41 d, and the cathode wiring 60. The insulating film 35 is an inorganic insulating film, and the insulating film 42 is an organic insulating film. The source electrode 41s and the drain electrode 41d are composed of a laminated structure of titanium and aluminum, that is, a laminated film of TiAlTi or TiAl. In addition, an organic material such as photosensitive acrylic is used for the insulating film 42.

源極電極41s之一部分形成於與閘極線31a重疊之區域。由介隔絕緣膜35而對向之閘極線31a與源極電極41s形成電容Cs1。又,閘極線31a形成於與半導體層25之一部分重疊之區域。電容Cs1亦包含由介隔絕緣膜24而對向之半導體層25與閘極線31a形成之電容。A part of the source electrode 41s is formed in a region overlapping with the gate line 31a. A capacitor Cs1 is formed by the gate line 31a and the source electrode 41s that are opposed to each other via the insulating fringe film 35. In addition, the gate line 31a is formed in a region overlapping a part of the semiconductor layer 25. The capacitor Cs1 also includes a capacitor formed by the semiconductor layer 25 and the gate line 31a opposed to the insulating bezel 24.

顯示裝置1具有:源極連接配線43s、汲極連接配線43d、絕緣膜45、對向陽極電極50e、絕緣膜66、連接層50f、連接導電部52、無機發光體100、絕緣膜70、平坦化膜80、對向陰極電極90e、及罩部92。源極連接配線43s設置於絕緣膜42上,經由設置於絕緣膜42之貫通孔連接於源極電極41s。汲極連接配線43d設置於絕緣膜42上,經由設置於絕緣膜42之貫通孔連接於汲極電極41d。絕緣膜45設置於絕緣膜42上,且覆蓋源極連接配線43s與汲極連接配線43d。對向陽極電極50e設置於絕緣膜45上,經由設置於絕緣膜45之貫通孔連接於驅動電晶體DRT之汲極連接配線43d。源極連接配線43s及汲極連接配線43d例如由銦錫氧化物(ITO、Indium Tin Oxide)等透明性導電體形成。The display device 1 has: source connection wiring 43s, drain connection wiring 43d, insulating film 45, counter anode electrode 50e, insulating film 66, connection layer 50f, connection conductive portion 52, phosphor 100, insulating film 70, flat The chemical film 80, the opposite cathode electrode 90e, and the cover 92. The source connection wiring 43 s is provided on the insulating film 42 and is connected to the source electrode 41 s through a through hole provided in the insulating film 42. The drain connection wiring 43 d is provided on the insulating film 42 and is connected to the drain electrode 41 d through a through hole provided in the insulating film 42. The insulating film 45 is provided on the insulating film 42 and covers the source connection wiring 43s and the drain connection wiring 43d. The opposite anode electrode 50e is provided on the insulating film 45, and is connected to the drain connection wiring 43d of the driving transistor DRT through a through hole provided in the insulating film 45. The source connection wiring 43s and the drain connection wiring 43d are formed of, for example, a transparent conductor such as indium tin oxide (ITO, Indium Tin Oxide).

絕緣膜66設置於絕緣膜45上,且覆蓋對向陽極電極50e。連接層50f設置於絕緣膜66上,經由設置於絕緣膜66之貫通孔連接於對向陽極電極50e。連接導電部52設置於連接層50f。無機發光體100設置於連接導電部52上,對向陽極電極50e經由連接層50f及連接導電部52,與無機發光體100之陽極電極112連接。於介隔絕緣膜45對向之對向陽極電極50e與源極連接配線43s之間,形成電容Cs2。The insulating film 66 is provided on the insulating film 45 and covers the opposite anode electrode 50e. The connection layer 50f is provided on the insulating film 66, and is connected to the counter anode electrode 50e via a through hole provided in the insulating film 66. The connection conductive portion 52 is provided on the connection layer 50f. The phosphor 100 is disposed on the connecting conductive portion 52, and the opposite anode electrode 50e is connected to the anode electrode 112 of the phosphor 100 via the connecting layer 50f and the connecting conductive portion 52. A capacitor Cs2 is formed between the opposing anode electrode 50e and the source connection wiring 43s, which are opposed to the insulating fringe film 45.

絕緣膜70設置於絕緣膜45上,且覆蓋連接層50f、連接導電部52、及無機發光體100之陽極電極112之側面。絕緣膜70於與陽極電極112重合之位置具有用於安裝無機發光體100之開口。絕緣膜70之開口之面積於俯視下,大於無機發光體100與對向陽極電極50e之接地面。又,對向陽極電極50e於俯視下,大於無機發光體100之與對向陽極電極50e之接地面。平坦化膜80設置於絕緣膜70上,且覆蓋無機發光體100之側面。對向陰極電極90e設置於平坦化膜80上。絕緣膜70為無機絕緣膜,例如包含矽氮化膜(SiN)。平坦化膜80係有機絕緣膜或無機有機混合絕緣膜(於Si-O主鏈,鍵結有例如有機基團(甲基或苯基)之材料)。無機發光體100之上表面(陰極電極114)自平坦化膜80露出。對向陰極電極90e連接於無機發光體100之陰極電極114。The insulating film 70 is disposed on the insulating film 45 and covers the connecting layer 50f, the connecting conductive portion 52, and the side surface of the anode electrode 112 of the phosphor 100. The insulating film 70 has an opening for mounting the phosphor 100 at a position overlapping with the anode electrode 112. The area of the opening of the insulating film 70 is larger than the ground surface of the phosphor 100 and the opposite anode electrode 50e in a plan view. In addition, the opposite anode electrode 50e is larger than the ground surface of the phosphor 100 and the opposite anode electrode 50e in a plan view. The planarization film 80 is disposed on the insulating film 70 and covers the side surface of the phosphor 100. The opposite cathode electrode 90e is provided on the planarizing film 80. The insulating film 70 is an inorganic insulating film, and includes, for example, a silicon nitride film (SiN). The planarizing film 80 is an organic insulating film or an inorganic-organic hybrid insulating film (a material in which, for example, an organic group (methyl or phenyl) is bonded to the Si-O main chain). The upper surface (cathode electrode 114) of the phosphor 100 is exposed from the planarization film 80. The opposite cathode electrode 90e is connected to the cathode electrode 114 of the phosphor 100.

對向陰極電極90經由設置於顯示區域AA之外側之接觸孔H11與設置於陣列基板2側之陰極配線60連接。具體而言,接觸孔CH1設置於平坦化膜80及絕緣膜42,於接觸孔CH1之底面設置陰極配線14。陰極配線60設置於絕緣膜35上。即,陰極配線60與源極電極41s及汲極電極41d設置於同層,且由相同之材料形成。對向陰極電極90e自顯示區域AA連續設置至周邊區域GA,於接觸孔CH1之底部與陰極配線60連接。罩部92設置於對向陰極電極90e上。罩部92係例如由玻璃等供光透過之構件構成之罩。惟,罩部92並非係必需之構成。The opposite cathode electrode 90 is connected to the cathode wiring 60 provided on the side of the array substrate 2 through the contact hole H11 provided on the outer side of the display area AA. Specifically, the contact hole CH1 is provided in the planarization film 80 and the insulating film 42, and the cathode wiring 14 is provided on the bottom surface of the contact hole CH1. The cathode wiring 60 is provided on the insulating film 35. That is, the cathode wiring 60 is provided in the same layer as the source electrode 41s and the drain electrode 41d, and is formed of the same material. The opposite cathode electrode 90e is continuously arranged from the display area AA to the peripheral area GA, and is connected to the cathode wiring 60 at the bottom of the contact hole CH1. The cover 92 is provided on the opposite cathode electrode 90e. The cover 92 is a cover made of a member for transmitting light, such as glass. However, the cover 92 is not a necessary configuration.

其次,針對無機發光體100中之單色無機發光體100A之構成,進行說明。圖6係顯示本實施形態之單色無機發光體之構成例之剖視圖。如圖6所示,單色無機發光體100A具有:單色無機發光元件102A、陽極電極112、及陰極電極114。Next, the structure of the monochromatic phosphor 100A in the phosphor 100 will be described. Fig. 6 is a cross-sectional view showing a configuration example of the monochromatic phosphor of this embodiment. As shown in FIG. 6, the monochromatic inorganic light-emitting body 100A has a monochromatic inorganic light-emitting element 102A, an anode electrode 112 and a cathode electrode 114.

單色無機發光元件102A係進行發光之發光層。單色無機發光元件102A具有:n型包層104、p型包層106、及設置於p型包層106與n型包層104之間之發光層108。於本實施形態中,單色無機發光元件102A朝向上側依序積層p型包層106、發光層108、n型包層104而構成。作為單色無機發光元件102A,使用氮化鎵(GaN)、磷化鋁銦鎵(AlInGaP)或砷化鋁鎵(AlGaAs)或是砷化鎵磷(GaAsP)等之化合物半導體。進一步而言,於本實施形態中,p型包層106及n型包層104使用氮化鎵(GaN)等。又,作為發光層108,使用氮化銦鎵(InGaN)等。發光層108可為積層有InGaN、GaN之多重量子井構造(MQW)。The monochromatic inorganic light-emitting element 102A is a light-emitting layer that emits light. The monochromatic inorganic light-emitting element 102A has an n-type cladding layer 104, a p-type cladding layer 106, and a light-emitting layer 108 provided between the p-type cladding layer 106 and the n-type cladding layer 104. In this embodiment, the monochromatic inorganic light-emitting element 102A is configured by sequentially laminating a p-type cladding layer 106, a light-emitting layer 108, and an n-type cladding layer 104 toward the upper side. As the monochromatic inorganic light-emitting element 102A, compound semiconductors such as gallium nitride (GaN), aluminum indium gallium phosphide (AlInGaP), aluminum gallium arsenide (AlGaAs), or gallium arsenide phosphorus (GaAsP) are used. Furthermore, in this embodiment, gallium nitride (GaN) or the like is used for the p-type cladding layer 106 and the n-type cladding layer 104. In addition, as the light-emitting layer 108, indium gallium nitride (InGaN) or the like is used. The light-emitting layer 108 may be a multiple quantum well structure (MQW) laminated with InGaN and GaN.

單色無機發光體100A朝向上側依序積層有陽極電極112、p型包層106、發光層108、n型包層104、陰極電極114。於單色無機發光體100A下設置:連接導電部52;及連接層50f,其設置於連接導電部52下且連接於對向陽極電極50e。於單色無機發光體100A上,設置對向陰極電極90e。In the monochromatic phosphor 100A, an anode electrode 112, a p-type cladding layer 106, a light-emitting layer 108, an n-type cladding layer 104, and a cathode electrode 114 are sequentially laminated toward the upper side. Disposed under the monochromatic phosphor 100A: the connecting conductive part 52; and the connecting layer 50f, which is disposed under the connecting conductive part 52 and connected to the opposite anode electrode 50e. On the monochromatic phosphor 100A, an opposite cathode electrode 90e is provided.

對向陽極電極50e(參照圖5)包含導電性之構件,此處包含金屬材料。於本實施形態中,對向陽極電極50e包含鈦(Ti)與鋁(Al),例如,鈦之層與鋁之層沿第3方向Dz積層。對向陽極電極50e作為像素電極,而就每一單色無機發光體100A(像素49)設置。The opposite anode electrode 50e (refer to FIG. 5) includes a conductive member, and here includes a metal material. In this embodiment, the counter anode electrode 50e includes titanium (Ti) and aluminum (Al). For example, a layer of titanium and a layer of aluminum are laminated in the third direction Dz. The opposite anode electrode 50e serves as a pixel electrode, and is provided for each monochromatic phosphor 100A (pixel 49).

連接層50f包含導電性之構件,此處包含金屬材料。於本實施形態中,連接層50f係由與對向陽極電極50e相同之材料構成。亦即,例如,連接層50f包含鈦(Ti)與鋁(Al),例如,鈦之層與鋁之層沿第3方向Dz積層。The connection layer 50f includes a conductive member, and here includes a metal material. In this embodiment, the connection layer 50f is made of the same material as the opposite anode electrode 50e. That is, for example, the connection layer 50f includes titanium (Ti) and aluminum (Al), for example, a layer of titanium and a layer of aluminum are laminated in the third direction Dz.

連接導電部52包含導電性之構件,此處包含金屬材料。於本實施形態中,連接導電部52係由熔點較連接層50f及對向陽極電極50e更低之材料構成。具體而言,連接導電部52為例如焊料,將連接層50f與陽極電極112接合。The connecting conductive portion 52 includes a conductive member, and here includes a metal material. In this embodiment, the connecting conductive portion 52 is made of a material having a lower melting point than that of the connecting layer 50f and the opposite anode electrode 50e. Specifically, the connection conductive portion 52 is, for example, solder, and the connection layer 50 f and the anode electrode 112 are joined.

陽極電極112設置於連接導電部52上。陽極電極112固定於連接導電部52。陽極電極112經由連接導電部52及連接層50f連接於對向陽極電極50e。陽極電極112為具有透光性之導電性之構件,為例如銦錫氧化物(ITO、Indium Tin Oxide)。於陽極電極112上,設置p型包層106。陽極電極112與p型包層106連接。The anode electrode 112 is disposed on the connection conductive portion 52. The anode electrode 112 is fixed to the connection conductive portion 52. The anode electrode 112 is connected to the counter anode electrode 50e via the connection conductive portion 52 and the connection layer 50f. The anode electrode 112 is a translucent conductive member, and is, for example, indium tin oxide (ITO, Indium Tin Oxide). On the anode electrode 112, a p-type cladding layer 106 is provided. The anode electrode 112 is connected to the p-type cladding layer 106.

陰極電極114設置於n型包層104上。陰極電極114為具有透光性之導電性之構件,為例如ITO。陰極電極114連接於對向陰極電極90e。The cathode electrode 114 is disposed on the n-type cladding layer 104. The cathode electrode 114 is a transparent conductive member, and is, for example, ITO. The cathode electrode 114 is connected to the counter cathode electrode 90e.

作為對向電極之對向陰極電極90e為具有透光性之導電性之構件,為例如ITO。對向陰極電極90e係於複數個(此處為所有)無機發光體100(像素49)共通設置之共通電極,且連接於複數個(此處為所有)無機發光體100之陰極電極114。對向陰極電極90e連接於所有單色無機發光體100A、及所有輔助無機發光體100B。The opposing cathode electrode 90e as the opposing electrode is a translucent conductive member, such as ITO. The opposite cathode electrode 90e is a common electrode provided in common for a plurality of (here, all) phosphors 100 (pixels 49), and is connected to the cathode electrode 114 of a plurality of (here, all) phosphors 100. The opposite cathode electrode 90e is connected to all the monochromatic phosphors 100A and all the auxiliary phosphors 100B.

其次,針對無機發光體100中之輔助無機發光體100B之構成,進行說明。圖7係顯示本實施形態之輔助無機發光體之構成例之剖視圖。圖8係顯示本實施形態之輔助無機發光體之構成例之俯視圖。如圖7所示,輔助無機發光體100B具有:複數個輔助無機發光元件102B、保護層109、陽極電極112、及陰極電極114。輔助無機發光元件102B於第3方向Dz之陽極電極112與陰極電極114之間形成為柱狀。亦即,輔助無機發光元件102B為於陽極電極112與陰極電極114之間,以第3方向Dz為軸向延伸之柱狀之構件。如圖8所示,輔助無機發光元件102B為例如圓柱形狀,但不限定於圓柱形狀,可為例如六角等多角柱形狀。保護層109於第3方向Dz上設置於陽極電極112與陰極電極114之間,且包圍輔助無機發光元件102B之周圍。保護層109為絕緣體,為例如SOG(Spin on Glass,旋塗式玻璃)。Next, the structure of the auxiliary phosphor 100B in the phosphor 100 will be described. Fig. 7 is a cross-sectional view showing a configuration example of the auxiliary phosphor of this embodiment. Fig. 8 is a plan view showing a configuration example of the auxiliary phosphor of this embodiment. As shown in FIG. 7, the auxiliary phosphor 100B has a plurality of auxiliary phosphors 102B, a protective layer 109, an anode electrode 112, and a cathode electrode 114. The auxiliary inorganic light emitting element 102B is formed in a columnar shape between the anode electrode 112 and the cathode electrode 114 in the third direction Dz. That is, the auxiliary inorganic light-emitting element 102B is a columnar member extending between the anode electrode 112 and the cathode electrode 114 with the third direction Dz as the axial direction. As shown in FIG. 8, the auxiliary inorganic light-emitting element 102B has a cylindrical shape, for example, but is not limited to a cylindrical shape, and may have a polygonal pillar shape such as a hexagon. The protective layer 109 is disposed between the anode electrode 112 and the cathode electrode 114 in the third direction Dz, and surrounds the periphery of the auxiliary inorganic light-emitting element 102B. The protective layer 109 is an insulator, such as SOG (Spin on Glass).

輔助無機發光元件102B為進行發光之發光層,具有:n型包層104B、p型包層106B、及設置於p型包層106B與n型包層104B之間之發光層108B。於本實施形態中,輔助無機發光元件102B朝向上側依序積層p型包層106B、發光層108B、n型包層104B而構成。作為輔助無機發光元件102B,使用氮化鎵(GaN)、磷化鋁銦鎵(AlInGaP)或砷化鋁鎵(AlGaAs)抑或砷化鎵磷(GaAsP)等之化合物半導體。進一步而言,於本實施形態中,p型包層106B及n型包層104B使用氮化鎵(GaN)等。又,作為發光層108B,使用氮化銦鎵(InGaN)等。發光層108B可為積層有InGaN、GaN之多重量子井構造(MQW)。The auxiliary inorganic light-emitting element 102B is a light-emitting layer that emits light, and has an n-type cladding layer 104B, a p-type cladding layer 106B, and a light-emitting layer 108B provided between the p-type cladding layer 106B and the n-type cladding layer 104B. In this embodiment, the auxiliary inorganic light-emitting element 102B is configured by sequentially stacking a p-type cladding layer 106B, a light-emitting layer 108B, and an n-type cladding layer 104B toward the upper side. As the auxiliary inorganic light-emitting element 102B, compound semiconductors such as gallium nitride (GaN), aluminum indium gallium phosphide (AlInGaP), aluminum gallium arsenide (AlGaAs), or gallium arsenide phosphorus (GaAsP) are used. Furthermore, in this embodiment, gallium nitride (GaN) or the like is used for the p-type cladding layer 106B and the n-type cladding layer 104B. In addition, as the light-emitting layer 108B, indium gallium nitride (InGaN) or the like is used. The light-emitting layer 108B may be a multiple quantum well structure (MQW) in which InGaN and GaN are laminated.

輔助無機發光體100B朝向上側,依序積層有陽極電極112、複數個輔助無機發光元件102B、陰極電極114。於輔助無機發光體100B下設置:連接導電部52;及連接層50f,其設置於連接導電部52下且連接於對向陽極電極50e。於輔助無機發光體100B上,設置對向陰極電極90e。對向陽極電極50e(參照圖5)作為像素電極,就每一輔助無機發光體100B設置。The auxiliary phosphor 100B faces upward, and an anode electrode 112, a plurality of auxiliary phosphors 102B, and a cathode electrode 114 are laminated in this order. Under the auxiliary phosphor 100B, a connecting conductive portion 52 is provided; and a connecting layer 50f is provided under the connecting conductive portion 52 and connected to the opposite anode electrode 50e. On the auxiliary phosphor 100B, an opposing cathode electrode 90e is provided. The opposite anode electrode 50e (refer to FIG. 5) serves as a pixel electrode and is provided for each auxiliary phosphor 100B.

陽極電極112設置於連接導電部52上,固定於連接導電部52。陽極電極112經由連接導電部52及連接層50f連接於對向陽極電極50e。於陽極電極112上,設置各個輔助無機發光元件102B。陽極電極112連接於各個輔助無機發光元件102B之p型包層106B。此處,可於連接層50f與連接導電部52、連接層52f與陽極電極112之間,設置障壁金屬(例如鉑(Pt)、鎳(Ni)、鈦鎢(TiW)等。The anode electrode 112 is disposed on the connecting conductive portion 52 and fixed to the connecting conductive portion 52. The anode electrode 112 is connected to the counter anode electrode 50e via the connection conductive portion 52 and the connection layer 50f. On the anode electrode 112, each auxiliary inorganic light-emitting element 102B is provided. The anode electrode 112 is connected to the p-type cladding layer 106B of each auxiliary inorganic light emitting element 102B. Here, a barrier metal (such as platinum (Pt), nickel (Ni), titanium tungsten (TiW)), etc. may be provided between the connection layer 50f and the connection conductive portion 52, and the connection layer 52f and the anode electrode 112.

陰極電極114設置於各個輔助無機發光元件102B上,且連接於各個輔助無機發光元件102B之n型包層104B。於陰極電極114上,設置對向陰極電極90e。對向陰極電極90e連接於陰極電極114。The cathode electrode 114 is disposed on each auxiliary inorganic light-emitting element 102B and connected to the n-type cladding layer 104B of each auxiliary inorganic light-emitting element 102B. On the cathode electrode 114, an opposite cathode electrode 90e is provided. The opposite cathode electrode 90e is connected to the cathode electrode 114.

如此,於1個輔助無機發光體100B中,對向陽極電極50e、連接層50f、連接導電部52、及作為電極之陽極電極112,對於複數個輔助無機發光元件102B共通設置。同樣地,於1個輔助無機發光體100B中,陰極電極114及對向陰極電極90e對於複數個輔助無機發光元件102B共通設置。換言之,對向陽極電極50e、連接層50f、連接導電部52、陽極電極112、陰極電極114及對向陰極電極90e,對於1個輔助無機發光體100B中所含之複數個輔助無機發光元件102B設置一個。In this way, in one auxiliary phosphor 100B, the counter anode electrode 50e, the connection layer 50f, the connection conductive portion 52, and the anode electrode 112 as the electrode are provided in common for the plurality of auxiliary phosphors 102B. Similarly, in one auxiliary phosphor 100B, the cathode electrode 114 and the counter cathode electrode 90e are provided in common for the plurality of auxiliary phosphors 102B. In other words, the counter anode electrode 50e, the connection layer 50f, the connection conductive portion 52, the anode electrode 112, the cathode electrode 114, and the counter cathode electrode 90e are related to the plurality of auxiliary phosphors 102B contained in one auxiliary phosphor 100B. Set one.

此外,輔助無機發光體100B可於陰極電極114與對向陰極電極90e之間,具有對於複數個輔助無機發光元件102B共通設置之包層。該包層可為氮化鎵等之化合物半導體。In addition, the auxiliary phosphor 100B may have a cladding layer provided in common to the plurality of auxiliary phosphors 102B between the cathode electrode 114 and the opposite cathode electrode 90e. The cladding layer may be a compound semiconductor such as gallium nitride.

輔助無機發光體100B具有第1輔助無機發光元件102RB、第2輔助無機發光元件102GB、及第3輔助無機發光元件102BB,作為輔助無機發光元件102B。第1輔助無機發光元件102RB、第2輔助無機發光元件102GB、及第3輔助無機發光元件102BB,於具有n型包層104B、發光層108B、及p型包層106B之點上共通,但自第3方向Dz觀察之情形之寬度互不相同。自第3方向Dz觀察之情形之寬度意指輔助無機發光元件102B之與第3方向Dz正交之方向之長度。於本例中,由於輔助無機發光元件102B為圓柱狀,故於自第3方向Dz觀察之情形之寬度意指輔助無機發光元件102B之直徑。亦即,如圖8所示,若將第1輔助無機發光元件102RB之直徑設為直徑DR,將第2輔助無機發光元件102GB之直徑設為直徑DG,將第3輔助無機發光元件102BB之直徑設為直徑DB,則直徑DR、直徑DG、直徑DB成為互不相同之長度。於本實施形態中,直徑DR大於直徑DG,直徑DG大於直徑DB。輔助無機發光元件102B雖然於具有n型包層104B、發光層108B、及p型包層106B之構造上共通,但藉由直徑如上述般不同,而可發出不同之波長頻帶之光。The auxiliary phosphor 100B has a first auxiliary phosphor 102RB, a second auxiliary phosphor 102GB, and a third auxiliary phosphor 102BB as the auxiliary phosphor 102B. The first auxiliary inorganic light-emitting element 102RB, the second auxiliary inorganic light-emitting element 102GB, and the third auxiliary inorganic light-emitting element 102BB are common in that they have the n-type cladding layer 104B, the light-emitting layer 108B, and the p-type cladding layer 106B. The widths when viewed in the third direction Dz are different from each other. The width when viewed from the third direction Dz means the length of the auxiliary inorganic light-emitting element 102B in the direction orthogonal to the third direction Dz. In this example, since the auxiliary inorganic light-emitting element 102B is cylindrical, the width when viewed from the third direction Dz refers to the diameter of the auxiliary inorganic light-emitting element 102B. That is, as shown in FIG. 8, if the diameter of the first auxiliary inorganic light-emitting element 102RB is set as the diameter DR, the diameter of the second auxiliary inorganic light-emitting element 102GB is set as the diameter DG, and the diameter of the third auxiliary inorganic light-emitting element 102BB is If the diameter DB is used, the diameter DR, the diameter DG, and the diameter DB have different lengths. In this embodiment, the diameter DR is greater than the diameter DG, and the diameter DG is greater than the diameter DB. Although the auxiliary inorganic light-emitting element 102B has the same structure with the n-type cladding layer 104B, the light-emitting layer 108B, and the p-type cladding layer 106B, it can emit light in different wavelength bands by being different in diameter as described above.

又,如上述般,輔助無機發光體100B,僅複數個輔助無機發光元件102B中之一部分成為可發光之狀態。具體而言,輔助無機發光體100B,僅複數個輔助無機發光元件102B中之一部分藉由連接於陰極電極114及對向陰極電極90e,而成為可發光之狀態,其他之輔助無機發光元件102B藉由未連接於陰極電極114及對向陰極電極90e,而成為無法發光之狀態。於圖7及圖8之例中,第1輔助無機發光元件102RB連接於陰極電極114及對向陰極電極90e,第2輔助無機發光元件102GB及第3輔助無機發光元件102BB未連接於陰極電極114及對向陰極電極90e。換言之,於第1輔助無機發光元件102RB上,設置陰極電極114及對向陰極電極90e,但於第2輔助無機發光元件102GB及第3輔助無機發光元件102BB上,未設置陰極電極114及對向陰極電極90e。輔助無機發光體100B由於僅第1輔助無機發光元件102RB連接於對向陰極電極90e,故僅對第1輔助無機發光元件102RB供給電流,僅第1輔助無機發光元件102RB發光。此外,雖然在本實施形態中,於第2輔助無機發光元件102GB及第3輔助無機發光元件102BB中,陰極電極114及對向陰極電極90e之兩者為非連接,但只要至少對向陰極電極90e為非連接即可。亦即,第2輔助無機發光元件102GB及第3輔助無機發光元件102BB即便連接於陰極電極114,但只要與對向陰極電極90e為非連接,則不被供給電流,而不發光。In addition, as described above, in the auxiliary phosphor 100B, only a part of the plurality of auxiliary phosphors 102B can emit light. Specifically, in the auxiliary phosphor 100B, only one part of the plurality of auxiliary phosphors 102B is connected to the cathode electrode 114 and the opposite cathode electrode 90e to be able to emit light, and the other auxiliary phosphors 102B Since it is not connected to the cathode electrode 114 and the opposite cathode electrode 90e, it becomes a state where light cannot be emitted. In the example of FIGS. 7 and 8, the first auxiliary inorganic light-emitting element 102RB is connected to the cathode electrode 114 and the opposite cathode electrode 90e, and the second auxiliary inorganic light-emitting element 102GB and the third auxiliary inorganic light-emitting element 102BB are not connected to the cathode electrode 114. And the opposite cathode electrode 90e. In other words, on the first auxiliary inorganic light emitting element 102RB, the cathode electrode 114 and the opposite cathode electrode 90e are provided, but on the second auxiliary inorganic light emitting element 102GB and the third auxiliary inorganic light emitting element 102BB, the cathode electrode 114 and the opposite electrode are not provided. Cathode electrode 90e. In the auxiliary phosphor 100B, since only the first auxiliary phosphor 102RB is connected to the counter cathode electrode 90e, only the first auxiliary phosphor 102RB is supplied with current, and only the first auxiliary phosphor 102RB emits light. In addition, in this embodiment, in the second auxiliary inorganic light emitting element 102GB and the third auxiliary inorganic light emitting element 102BB, both the cathode electrode 114 and the counter cathode electrode 90e are not connected, but at least the counter cathode electrode 90e is not connected. That is, even if the second auxiliary inorganic light emitting element 102GB and the third auxiliary inorganic light emitting element 102BB are connected to the cathode electrode 114, as long as they are disconnected from the counter cathode electrode 90e, no current is supplied and no light is emitted.

又,第1輔助無機發光元件102RB設置有複數個,於與第3方向Dz正交之平面中,矩陣狀排列。同樣地,第2輔助無機發光元件102GB及第3輔助無機發光元件102BB亦分別設置有複數個,於與第3方向Dz正交之平面中,矩陣狀排列。此處,如圖8所示,於1個輔助無機發光體100B中,自第3方向Dz觀察,將供第1輔助無機發光元件102RB設置之區域設為第1區域103RB,將供第2輔助無機發光元件102GB設置之區域設為第2區域103GB,將供第3輔助無機發光元件102BB設置之區域設為第3區域103BB。此情形下,第1區域103RB、第2區域103GB、及第3區域103BB之面積互不相同。於本實施形態之例中,較佳為,第1區域103RB之面積大於第2區域103GB之面積,第2區域103GB之面積大於第3區域103BB之面積。此外,於本實施形態中,成為第2區域103GB與第3區域103BB於第2方向Dy鄰接,第1區域103RB於第1方向Dx鄰接於第2區域103GB與第3區域103BB之排列。惟,第1區域103RB、第2區域103GB、與第3區域103BB之排列方式為任意。In addition, a plurality of first auxiliary inorganic light-emitting elements 102RB are provided, and are arranged in a matrix in a plane orthogonal to the third direction Dz. Similarly, the second auxiliary inorganic light-emitting element 102GB and the third auxiliary inorganic light-emitting element 102BB are respectively provided in plural, and are arranged in a matrix in a plane orthogonal to the third direction Dz. Here, as shown in FIG. 8, in one auxiliary phosphor 100B, when viewed from the third direction Dz, the area where the first auxiliary phosphor 102RB is installed is set as the first area 103RB, and the second auxiliary phosphor 100B The area where the inorganic light-emitting element 102GB is installed is referred to as the second area 103GB, and the area where the third auxiliary inorganic light-emitting element 102BB is installed is referred to as the third area 103BB. In this case, the areas of the first area 103RB, the second area 103GB, and the third area 103BB are different from each other. In the example of this embodiment, it is preferable that the area of the first region 103RB is larger than the area of the second region 103GB, and the area of the second region 103GB is larger than the area of the third region 103BB. In addition, in this embodiment, the second area 103GB and the third area 103BB are adjacent to each other in the second direction Dy, and the first area 103RB is adjacent to the second area 103GB and the third area 103BB in the first direction Dx. However, the arrangement of the first area 103RB, the second area 103GB, and the third area 103BB is arbitrary.

此外,以後,於1個輔助無機發光體100B中,將包含所有輔助無機發光元件102B之構造體記載為輔助無機發光元件集合體101B。亦即,輔助無機發光元件集合體101B係包含1個輔助無機發光體100B之所有輔助無機發光元件102B者,進一步而言,亦可包含保護層109。In addition, hereinafter, in one auxiliary phosphor 100B, a structure including all auxiliary phosphors 102B is referred to as auxiliary phosphor assembly 101B. That is, the auxiliary phosphor assembly 101B includes all auxiliary phosphors 102B of one auxiliary phosphor 100B, and furthermore, may include the protective layer 109.

單色無機發光體100A與輔助無機發光體100B成為如以上之構成。於自無機發光體100與對向陰極電極90e排列之方向觀察之情形下,亦即於自第3方向Dz觀察之情形下,設置1個輔助無機發光體100B之區域較佳為較設置1個單色無機發光體100A之區域更寬廣。設置輔助無機發光體100B之區域,例如意指輔助無機發光體100B之下側之電極即陽極電極112,設置單色無機發光體100A之區域,例如意指單色無機發光體100A之下側之電極即陽極電極112。The monochromatic phosphor 100A and the auxiliary phosphor 100B have the above configuration. When viewed from the direction in which the phosphor 100 and the opposite cathode electrode 90e are arranged, that is, when viewed from the third direction Dz, the area where one auxiliary phosphor 100B is provided is better than one The monochromatic phosphor 100A has a wider area. The area where the auxiliary phosphor 100B is provided means, for example, the anode electrode 112, which is the electrode under the auxiliary phosphor 100B, and the area where the monochromatic phosphor 100A is provided, for example, means the area under the single color phosphor 100A. The electrode is the anode electrode 112.

又,雖然如以上所說明般,輔助無機發光體100B之輔助無機發光元件102B成為柱狀之所謂之納米線形狀,但單色無機發光體100A之單色無機發光元件102A並非係納米線形狀。惟,單色無機發光體100A之單色無機發光元件102A亦可為納米線形狀。此情形下,單色無機發光體100A係由與輔助無機發光元件102B同樣之構造之柱狀之單色無機發光元件102A排列複數個而構成,但由於單色無機發光元件102A發出相同之波長頻帶之光,故各個單色無機發光元件102A之直徑成為相同(更詳細而言成為特定之數值範圍內)。Moreover, although the auxiliary phosphor 102B of the auxiliary phosphor 100B has a columnar so-called nanowire shape as described above, the monochromatic phosphor 102A of the monochromatic phosphor 100A is not a nanowire shape. However, the monochromatic inorganic light-emitting element 102A of the monochromatic phosphor 100A may also be in the shape of a nanowire. In this case, the monochromatic phosphor 100A is composed of columnar monochromatic inorganic light emitting elements 102A with the same structure as the auxiliary inorganic light emitting element 102B. However, since the monochromatic inorganic light emitting element 102A emits the same wavelength band Therefore, the diameter of each monochromatic inorganic light-emitting element 102A becomes the same (in a specific numerical range in more detail).

(顯示裝置之製造方法) 其次,針對顯示裝置1之製造方法,更具體而言針對輔助無機發光體100B之搭載方法,進行說明。具備無機發光體100之顯示裝置1,有因例如由無機發光體100之尺寸較小所致之搭載之困難性等,難以進行製造,而招致不良之情形。若不使用視為不良之顯示裝置1,並進行作廢處理,則成品率降低。相對於此,於本實施形態中,藉由修復視為不良之顯示裝置1,而將成為不良之顯示裝置1設為可使用之狀態,抑制成品率之降低。此處之不良意指搭載於顯示裝置1之至少一部分之單色無機發光體100A未適切地發光。作為單色無機發光體100A未適切地發光之狀態,例如可舉出暗點狀態或亮點狀態。暗點狀態意指即便於流通用於使單色無機發光體100A發光之電流之情形下,該單色無機發光體100A亦不發光之狀態。另一方面,亮點狀態意指即便於未流通用於使無機發光體100發光之電流之情形下,該無機發光體100亦發光之狀態。亦即,即便於未流通用於使無機發光體100發光之電流之情形下,因例如於其他之配線短路等,而該無機發光體100亦發光之狀態為亮點狀態。(Method of manufacturing display device) Next, the manufacturing method of the display device 1 and, more specifically, the mounting method of the auxiliary phosphor 100B will be described. The display device 1 provided with the inorganic light-emitting body 100 may be difficult to manufacture due to, for example, the difficulty of mounting due to the small size of the inorganic light-emitting body 100, which may cause defects. If the display device 1 deemed to be defective is not used and discarded, the yield will decrease. In contrast, in the present embodiment, the display device 1 deemed defective is repaired, and the defective display device 1 is put into a usable state, thereby suppressing a decrease in yield. The defect here means that at least a part of the monochromatic phosphor 100A mounted on the display device 1 does not emit light appropriately. Examples of the state in which the monochromatic phosphor 100A does not emit light appropriately include a dark spot state or a bright spot state. The dark spot state means a state in which the monochromatic phosphor 100A does not emit light even when a current for making the monochromatic phosphor 100A emits light is passed. On the other hand, the bright spot state means a state in which the phosphor 100 emits light even when the current for making the phosphor 100 emits light is not circulated. That is, even when the current for making the phosphor 100 emits light is not flowing, the state of the phosphor 100 emitting light is a bright spot state due to, for example, a short circuit in other wirings.

於本實施形態中,藉由將如上述般成為不良之單色無機發光體100A換裝為輔助無機發光體100B,而可將顯示裝置1設為可使用之狀態。以下,針對亦包含換裝之顯示裝置1之製造方法,進行說明。圖9係說明第1實施形態之顯示裝置之製造方法之示意圖。In this embodiment, by replacing the monochromatic phosphor 100A that has become defective as described above with the auxiliary phosphor 100B, the display device 1 can be put into a usable state. Hereinafter, the manufacturing method of the display device 1 including replacement will be described. FIG. 9 is a schematic diagram illustrating the manufacturing method of the display device of the first embodiment.

如圖9之步驟S10所示,於本實施形態之顯示裝置1之製造方法中,形成顯示裝置1之陣列基板2,於陣列基板2上形成單色無機發光元件102A。具體而言,藉由形成顯示裝置1之較陽極電極112更下側之各部、及陽極電極112,而形成陣列基板2。又,於與陣列基板2不同之形成基板200上,形成單色無機發光元件102A。而後,將形成於形成基板200上之單色無機發光元件102A搭載於陣列基板2上。於本實施形態中,藉由雷射剝離,而將單色無機發光元件102A搭載於陣列基板2上。具體而言,使形成基板200之形成有單色無機發光元件102A之面與陣列基板2之形成有陽極電極112之面對向。而後,自與形成基板200之形成有單色無機發光元件102A之面為相反側之面,朝形成基板200上之單色無機發光元件102A,照射雷射光LI。藉此,單色無機發光元件102A自形成基板200上剝離,並被轉印至陣列基板2之陽極電極112上。此外,雖然在圖9之例中,於形成基板200上,形成第1單色無機發光元件102RA、第2單色無機發光元件102GA、及第3單色無機發光元件102BA,但可將第1單色無機發光元件102RA、第2單色無機發光元件102GA、及第3單色無機發光元件102BA形成於互不相同之形成基板。此情形下,將第1單色無機發光元件102RA、第2單色無機發光元件102GA、與第3單色無機發光元件102BA依序轉印至陣列基板2上。又,將單色無機發光元件102A搭載於陣列基板2之方法行不限定於雷射剝離,可為任意。As shown in step S10 of FIG. 9, in the manufacturing method of the display device 1 of this embodiment, the array substrate 2 of the display device 1 is formed, and the monochromatic inorganic light-emitting element 102A is formed on the array substrate 2. Specifically, the array substrate 2 is formed by forming parts of the display device 1 below the anode electrode 112 and the anode electrode 112. In addition, a monochromatic inorganic light-emitting element 102A is formed on a formation substrate 200 different from the array substrate 2. Then, the monochromatic inorganic light emitting element 102A formed on the formation substrate 200 is mounted on the array substrate 2. In this embodiment, the monochromatic inorganic light-emitting element 102A is mounted on the array substrate 2 by laser peeling. Specifically, the surface of the substrate 200 on which the monochromatic inorganic light-emitting element 102A is formed and the surface of the array substrate 2 on which the anode electrode 112 is formed face each other. Then, from the surface opposite to the surface on which the monochromatic inorganic light-emitting element 102A is formed on the formation substrate 200, the laser light LI is irradiated toward the monochromatic inorganic light-emitting element 102A on the formation substrate 200. Thereby, the monochromatic inorganic light emitting element 102A is peeled from the forming substrate 200 and transferred to the anode electrode 112 of the array substrate 2. In addition, although in the example of FIG. 9, the first single-color inorganic light-emitting element 102RA, the second single-color inorganic light-emitting element 102GA, and the third single-color inorganic light-emitting element 102BA are formed on the formation substrate 200, the first The monochromatic inorganic light emitting element 102RA, the second monochromatic inorganic light emitting element 102GA, and the third monochromatic inorganic light emitting element 102BA are formed on different formation substrates. In this case, the first single-color inorganic light-emitting element 102RA, the second single-color inorganic light-emitting element 102GA, and the third single-color inorganic light-emitting element 102BA are sequentially transferred onto the array substrate 2. In addition, the method of mounting the monochromatic inorganic light-emitting element 102A on the array substrate 2 is not limited to laser lift-off, and may be arbitrary.

當於陣列基板2上形成單色無機發光元件102A後,如步驟S12所示般,藉由將檢查用基板202連接於陣列基板2上之單色無機發光元件102A,並執行點亮檢查,而檢測單色無機發光元件102A之不良。檢查用基板202具備導電部202A、及基部202B。導電部202A為例如ITO等透光性之導電構件。基部202B為設置於導電部202A之背面之基板,為例如玻璃等透光性之絕緣構件。於步驟S12中,藉由使導電部202A之表面與陣列基板2上之各個單色無機發光元件102A之上側之面、亦即n型包層104接觸,而將各個單色無機發光元件102A與導電部202A電性連接。而後,藉由於各個陣列基板2之陽極電極112與導電部202A之間賦予電位差(施加電壓),而於單色無機發光元件102A流通用於發光之電流。而後,檢測單色無機發光元件102A是否適切地發光,將適切地發光之單色無機發光元件102A判斷為並非不良之正常的單色無機發光元件102A,將未適切地發光之單色無機發光元件102A判斷為成為不良之單色無機發光元件102A。由於檢查用基板202具有透光性,故可自檢查用基板202之上方,確認單色無機發光元件102A是否發光。以下,將判斷為不良之單色無機發光元件102A,記載為不良無機發光元件102N。如此,雖然於本實施形態中,藉由使用檢查用基板202之點亮檢查,檢測不良無機發光元件102N,但不良無機發光元件102N之檢測方法並不限定於使用檢查用基板202之點亮檢查。After the monochromatic inorganic light-emitting element 102A is formed on the array substrate 2, as shown in step S12, the inspection substrate 202 is connected to the monochromatic inorganic light-emitting element 102A on the array substrate 2 and the lighting inspection is performed. The defect of the single-color inorganic light-emitting element 102A is detected. The inspection substrate 202 includes a conductive portion 202A and a base portion 202B. The conductive portion 202A is a translucent conductive member such as ITO. The base 202B is a substrate provided on the back surface of the conductive portion 202A, and is a translucent insulating member such as glass. In step S12, by contacting the surface of the conductive portion 202A with the surface on the upper side of each single-color inorganic light-emitting element 102A on the array substrate 2, that is, the n-type cladding layer 104, each single-color inorganic light-emitting element 102A and The conductive portion 202A is electrically connected. Then, by applying a potential difference (applied voltage) between the anode electrode 112 of each array substrate 2 and the conductive portion 202A, a current for emitting light flows through the monochromatic inorganic light-emitting element 102A. Then, it is checked whether the monochromatic inorganic light-emitting element 102A emits light appropriately, the monochromatic inorganic light-emitting element 102A that appropriately emits light is judged as a normal monochromatic inorganic light-emitting element 102A that is not defective, and the monochromatic inorganic light-emitting element 102A that does not emit light appropriately 102A is judged to be a defective single-color inorganic light-emitting element 102A. Since the inspection substrate 202 is light-transmissive, it can be confirmed from above the inspection substrate 202 whether or not the monochromatic inorganic light-emitting element 102A emits light. Hereinafter, the single-color inorganic light-emitting element 102A judged to be defective is referred to as a defective inorganic light-emitting element 102N. In this way, although in this embodiment, the defective inorganic light-emitting element 102N is detected by the lighting inspection using the inspection substrate 202, the detection method of the defective inorganic light-emitting element 102N is not limited to the lighting inspection using the inspection substrate 202 .

當檢測到不良無機發光元件102N後,如步驟S14所示般,自陣列基板2去除不良無機發光元件102N。於圖9中,顯示1個第1單色無機發光元件102RA被檢測為不良無機發光元件102N之例。於步驟S14中,於原狀殘留陽極電極112下,自陣列基板2去除不良無機發光元件102N即第1單色無機發光元件102RA。藉此,陣列基板2成為於搭載有不良無機發光元件102N之陽極電極112上,未搭載單色無機發光元件102A之狀態。After the defective inorganic light-emitting element 102N is detected, the defective inorganic light-emitting element 102N is removed from the array substrate 2 as shown in step S14. FIG. 9 shows an example in which a first single-color inorganic light-emitting element 102RA is detected as a defective inorganic light-emitting element 102N. In step S14, the defective inorganic light-emitting element 102N, that is, the first single-color inorganic light-emitting element 102RA, is removed from the array substrate 2 under the anode electrode 112 as it is. Thereby, the array substrate 2 is in a state where the anode electrode 112 on which the defective inorganic light-emitting element 102N is mounted, and the single-color inorganic light-emitting element 102A is not mounted.

如此,於圖9之例中,將所有單色無機發光元件102A搭載於陣列基板2上,自搭載於陣列基板2上之單色無機發光元件102A中,檢測不良無機發光元件102N。惟,檢測不良無機發光元件102N之時序並不限定於此。例如,可於在形成基板200上形成有單色無機發光元件102A之狀態下,亦即於在將單色無機發光元件102A轉印至陣列基板2上前之狀態下,自形成基板200上之單色無機發光元件102A中,檢測不良無機發光元件102N。此情形下,例如,可使用光致發光法,自形成基板200上之單色無機發光元件102A中,檢測不良無機發光元件102N。於光致發光法中,朝單色無機發光元件102A照射光,檢測當經激發之單色無機發光元件102A之電子恢復基態時發出之光,基於該光,檢測缺陷等單色無機發光元件102A之狀態。而後,基於以例如光致發光法檢測到之單色無機發光元件102A之狀態,判斷是否為不良無機發光元件102N。可將以例如光致發光法檢測到缺陷之單色無機發光元件102A,判斷為不良無機發光元件102N。如此,於在轉移至陣列基板2上前檢測到不良無機發光元件102N之情形下,將形成基板200上之不良無機發光元件102N以外之單色無機發光元件102A轉印至陣列基板2,不將不良無機發光元件102N轉印至陣列基板2。此情形下,陣列基板2成為於應搭載不良無機發光元件102N之陽極電極112上未搭載單色無機發光元件102A之狀態、亦即與步驟S14之執行後相同之狀態。In this way, in the example of FIG. 9, all the single-color inorganic light-emitting elements 102A are mounted on the array substrate 2, and the defective inorganic light-emitting elements 102N are detected from the single-color inorganic light-emitting elements 102A mounted on the array substrate 2. However, the timing of detecting the defective inorganic light-emitting element 102N is not limited to this. For example, in the state where the monochromatic inorganic light-emitting element 102A is formed on the formation substrate 200, that is, in the state before the monochromatic inorganic light-emitting element 102A is transferred to the array substrate 2, the self-forming substrate 200 In the single-color inorganic light-emitting element 102A, a defective inorganic light-emitting element 102N was detected. In this case, for example, a photoluminescence method can be used to detect the defective inorganic light-emitting element 102N from the monochromatic inorganic light-emitting element 102A on the substrate 200. In the photoluminescence method, light is irradiated to the monochromatic inorganic light-emitting element 102A, and the light emitted when the electrons of the excited monochromatic inorganic light-emitting element 102A return to the ground state is detected. Based on the light, the monochromatic inorganic light-emitting element 102A such as defects is detected The state. Then, based on the state of the monochromatic inorganic light-emitting element 102A detected by, for example, the photoluminescence method, it is determined whether it is a defective inorganic light-emitting element 102N. The monochromatic inorganic light-emitting element 102A whose defect is detected by, for example, a photoluminescence method can be judged as a defective inorganic light-emitting element 102N. In this way, when the defective inorganic light-emitting element 102N is detected before being transferred to the array substrate 2, the monochromatic inorganic light-emitting element 102A other than the defective inorganic light-emitting element 102N on the substrate 200 is transferred to the array substrate 2 without transferring The defective inorganic light-emitting element 102N is transferred to the array substrate 2. In this case, the array substrate 2 is in a state where the single-color inorganic light-emitting element 102A is not mounted on the anode electrode 112 where the defective inorganic light-emitting element 102N should be mounted, that is, the state is the same as that after the execution of step S14.

其次,如步驟S16所示般,於搭載有不良無機發光元件102N之陽極電極112上(或於應搭載不良無機發光元件102N之陽極電極112上),搭載輔助無機發光元件集合體101B(包含1個輔助無機發光體100B之所有輔助無機發光元件102B之構造體)。藉此,於陣列基板2上,形成單色無機發光元件102A與輔助無機發光元件102B。Next, as shown in step S16, on the anode electrode 112 equipped with the defective inorganic light-emitting element 102N (or on the anode electrode 112 where the defective inorganic light-emitting element 102N should be mounted), the auxiliary inorganic light-emitting element assembly 101B (including 1 The structure of all the auxiliary phosphors 102B of the auxiliary phosphors 100B). In this way, the single-color inorganic light-emitting element 102A and the auxiliary inorganic light-emitting element 102B are formed on the array substrate 2.

其次,如步驟S18所示般,於陣列基板2上,形成單色無機發光體100A、輔助無機發光體100B、絕緣膜70、平坦化膜80、及對向陰極電極90e。具體而言,於單色無機發光元件102A與輔助無機發光元件102B各者上,形成陰極電極114。藉此,於陣列基板2上,形成單色無機發光體100A、與輔助無機發光體100B。而後,於陣列基板2上之未形成單色無機發光體100A及輔助無機發光體100B之空間,填充絕緣膜70與平坦化膜80。而後,於單色無機發光體100A與輔助無機發光體100B上,形成對向陰極電極90e。此處,以連接於所有單色無機發光體100A與輔助無機發光體100B之方式,形成對向陰極電極90e。Next, as shown in step S18, on the array substrate 2, a monochromatic phosphor 100A, an auxiliary phosphor 100B, an insulating film 70, a planarizing film 80, and a counter cathode electrode 90e are formed. Specifically, a cathode electrode 114 is formed on each of the monochromatic inorganic light-emitting element 102A and the auxiliary inorganic light-emitting element 102B. In this way, the monochromatic phosphor 100A and the auxiliary phosphor 100B are formed on the array substrate 2. Then, the space where the single-color phosphor 100A and the auxiliary phosphor 100B are not formed on the array substrate 2 is filled with the insulating film 70 and the planarizing film 80. Then, the opposite cathode electrode 90e is formed on the monochromatic phosphor 100A and the auxiliary phosphor 100B. Here, the opposite cathode electrode 90e is formed so as to be connected to all the single-color phosphors 100A and the auxiliary phosphor 100B.

其次,如步驟S20所示般,去除連接於輔助無機發光體100B之對向陰極電極90e之一部分、與輔助無機發光體100B之陰極電極114之一部分。例如,藉由朝對向陰極電極90e及陰極電極114之去除之部分,照射雷射光LIa,而去除對向陰極電極90e及陰極電極114。具體而言,去除對向陰極電極90e及陰極電極114之連接於輔助無機發光體100B之第2輔助無機發光元件102GB之部分、及連接於輔助無機發光體100B之第3輔助無機發光元件102BB之部分。藉此,如圖7及圖8所示,輔助無機發光體100B之第1輔助無機發光元件102RB連接於對向陰極電極90e而成為可發光之狀態,第2輔助無機發光元件102GB及第3輔助無機發光元件102BB與對向陰極電極90e成為非連接而成為無法發光之狀態。亦即,於步驟S20中,設為使對向陰極電極90e及陰極電極114,對於發出與當不良無機發光元件102N為正常之狀態時發出之波長頻帶之光相同之波長頻帶之光之輔助無機發光元件102B連接之狀態。而且,對於發出與當不良無機發光元件102N為正常之狀態時發出之波長頻帶之光不同之波長頻帶之光之輔助無機發光元件102B,將對向陰極電極90e及陰極電極114設為非連接之狀態。Next, as shown in step S20, a part of the opposite cathode electrode 90e connected to the auxiliary phosphor 100B and a part of the cathode electrode 114 of the auxiliary phosphor 100B are removed. For example, by irradiating the laser light LIa toward the removed portion of the opposite cathode electrode 90e and the cathode electrode 114, the opposite cathode electrode 90e and the cathode electrode 114 are removed. Specifically, the portion of the opposite cathode electrode 90e and the cathode electrode 114 connected to the second auxiliary phosphor 100B of the auxiliary phosphor 100B and the third auxiliary phosphor 102BB connected to the auxiliary phosphor 100B are removed. part. As a result, as shown in FIGS. 7 and 8, the first auxiliary phosphor 102RB of the auxiliary phosphor 100B is connected to the opposite cathode electrode 90e to be in a state capable of emitting light, and the second auxiliary phosphor 102GB and the third auxiliary phosphor can emit light. The inorganic light-emitting element 102BB and the counter cathode electrode 90e are disconnected and cannot emit light. That is, in step S20, it is assumed that the opposing cathode electrode 90e and the cathode electrode 114 are for the auxiliary inorganic light emitting light in the same wavelength band as the light emitted when the defective inorganic light emitting element 102N is in the normal state. The connected state of the light-emitting element 102B. Furthermore, for the auxiliary inorganic light emitting element 102B that emits light in a wavelength band different from the light in the wavelength band emitted when the defective inorganic light emitting element 102N is in a normal state, the opposite cathode electrode 90e and the cathode electrode 114 are set to be non-connected state.

於步驟S20後,如步驟S22所示般,於去除對向陰極電極90e之一部分與陰極電極114之一部分而形成之空間AR,填充絕緣體80B。絕緣體80B為例如絕緣性之樹脂。惟,絕緣體80B之填充並非係必需之工序。又,之後,可於對向陰極電極90e上,形成罩部92。After step S20, as shown in step S22, the space AR formed by removing a part of the opposite cathode electrode 90e and a part of the cathode electrode 114 is filled with the insulator 80B. The insulator 80B is, for example, insulating resin. However, the filling of the insulator 80B is not a necessary process. Furthermore, after that, a cover portion 92 can be formed on the opposite cathode electrode 90e.

如以上所示般,於本實施形態中,設為於顯示裝置1未搭載不良無機發光體(不良無機發光元件102N)之狀態,取而代之,搭載輔助無機發光體100B。因此,本實施形態之顯示裝置1可抑制因不良無機發光體之發光不良而圖像顯示變得不適切。進而,顯示裝置1藉由搭載輔助無機發光體100B,而可發出當不良無機發光體正常時應發光之波長頻帶之光,可更佳地抑制圖像顯示變得不適切。又,亦考量換裝發出單色之色之光之單色無機發光體100A,而取代不良無機發光體。然而,由於難以預測發出哪一波長頻帶(色)之光之無機發光體100成為不良,故產生為了換裝,而準備複數種單色無機發光體100A之需要。而且,亦有於換裝時,產生就每一種類依序搭載單色無機發光體100A之需要等,而換裝工序之作業負載變高之情形。相對於此,於本實施形態中,換裝用之輔助無機發光體100B具備發出不同之波長頻帶之光之複數種輔助無機發光元件102B。因而,可藉由1種輔助無機發光體100B,替代所有種類之無機發光體100,無須為了換裝,準備複數種無機發光體100。又,由於可以1種輔助無機發光體100B進行換裝,故可抑制換裝工序之作業負載。As described above, in this embodiment, the display device 1 is in a state where the defective phosphor (defective phosphor 102N) is not mounted, and instead, the auxiliary phosphor 100B is mounted. Therefore, the display device 1 of the present embodiment can prevent the image display from becoming unsuitable due to poor light emission of the poor phosphor. Furthermore, the display device 1 is equipped with the auxiliary phosphor 100B, so that it can emit light in the wavelength band that should emit light when the defective phosphor is normal, and the image display can be better prevented from becoming unsuitable. In addition, it is also considered to replace the non-performing phosphor with a single-color phosphor 100A that emits a single-color light. However, since it is difficult to predict which wavelength band (color) of the phosphor 100 that emits light will become defective, there is a need to prepare a plurality of monochromatic phosphors 100A for replacement. Moreover, there is also a situation where the need to sequentially mount the monochromatic phosphors 100A for each type during the reinstallation process, and the work load of the reinstallation process becomes higher. In contrast, in the present embodiment, the auxiliary phosphor 100B for replacement includes a plurality of auxiliary phosphors 102B that emit light in different wavelength bands. Therefore, one kind of auxiliary phosphor 100B can be used to replace all kinds of phosphors 100, and there is no need to prepare multiple kinds of phosphors 100 for replacement. In addition, since one type of auxiliary phosphor 100B can be replaced, the work load of the replacement process can be suppressed.

(輔助無機發光體之驅動控制) 其次,針對輔助無機發光體100B、亦即輔助像素49BB之驅動控制之方法,進行說明。圖10係示意性顯示信號處理電路之構成之方塊圖。以後,以輔助無機發光體100B、亦即輔助像素49BB發出第1波長頻帶之光、此處為紅色之光之情形為例進行說明。惟,輔助像素49BB並不限定於發出第1波長頻帶之光,可發出第2波長頻帶或第3波長頻帶之光。(Drive control of auxiliary phosphor) Next, the method of driving control of the auxiliary phosphor 100B, that is, the auxiliary pixel 49BB, will be described. FIG. 10 is a block diagram schematically showing the structure of the signal processing circuit. Hereinafter, a case where the auxiliary phosphor 100B, that is, the auxiliary pixel 49BB emits light in the first wavelength band, which is red light here, will be described as an example. However, the auxiliary pixel 49BB is not limited to emitting light in the first wavelength band, and may emit light in the second wavelength band or the third wavelength band.

如圖10所示,顯示裝置1所具備之信號處理電路160具有:第1處理電路162、記憶體164、及緩衝器166。信號處理電路160基於影像信號Vsig對3個像素49各者之輸出灰階值SoR、SoG、SoB進行運算。影像信號Vsig包含每一像素Pix之輸入灰階值SiR、SiG、SiB。輸入灰階值SiR、SiG、SiB分別係紅色、綠色、藍色之灰階值。輸出灰階值SoR係與取代第1像素49R之輔助像素49BB對應之灰階值。又,輸出灰階值SoG係與第2像素49G對應之灰階值,輸出灰階值SoB係與第3像素49B對應之灰階值。信號處理電路160可包含於例如圖1所示之驅動IC 210,亦可作為與驅動IC 210不同之電路晶片設置於基板10。以下,在無需分別區別輸出灰階值SoR、SoG、SoB之情形下,稱為輸出灰階值So。又,在無需分別區別輸入灰階值SiR、SiG、SiB之情形下,稱為輸入灰階值Si。As shown in FIG. 10, the signal processing circuit 160 included in the display device 1 includes a first processing circuit 162, a memory 164, and a buffer 166. The signal processing circuit 160 calculates the output gray scale values SoR, SoG, and SoB of each of the three pixels 49 based on the video signal Vsig. The image signal Vsig includes the input gray scale values SiR, SiG, and SiB of each pixel Pix. The input grayscale values SiR, SiG, SiB are the grayscale values of red, green, and blue respectively. The output gray scale value SoR is the gray scale value corresponding to the auxiliary pixel 49BB replacing the first pixel 49R. In addition, the output gray scale value SoG is a gray scale value corresponding to the second pixel 49G, and the output gray scale value SoB is a gray scale value corresponding to the third pixel 49B. The signal processing circuit 160 may be included in, for example, the driving IC 210 shown in FIG. Hereinafter, when there is no need to distinguish the output gray scale values SoR, SoG, and SoB separately, it is referred to as the output gray scale value So. In addition, when there is no need to distinguish the input gray scale values SiR, SiG, and SiB separately, it is called the input gray scale value Si.

緩衝器166係記憶輸入灰階值Si之電路。此外,緩衝器166可記憶1圖框份之影像信號Vsig中所含之輸入灰階值Si,亦可擷取入1圖框份之影像信號Vsig中一部分之影像信號Vsig中所含之輸入灰階值Si。The buffer 166 is a circuit that stores the input gray level value Si. In addition, the buffer 166 can store the input gray level value Si contained in the image signal Vsig of 1 frame, and can also capture the input gray value Si contained in the image signal Vsig of a part of the image signal Vsig of 1 frame. Order value Si.

記憶體164包含表示輸入灰階值SiR、SiG、SiB、與輸出灰階值SoR、SoG、SoB之關係之資訊的資料LUT。資料LUT例如為諸如查找表(Look Up Table)之表資料。The memory 164 includes a data LUT representing information about the relationship between the input gray scale values SiR, SiG, and SiB, and the output gray scale values SoR, SoG, and SoB. The data LUT is, for example, table data such as a look up table (Look Up Table).

第1處理電路162參照自記憶體164讀出之資料LUT,而特定出與輸入灰階值SiR、SiG、SiB對應之輸出灰階值SoR、SoGb、SoB。第1處理電路162將輸出灰階值SoR、SoG、SoB輸出至像素Pix。各像素49基於輸出灰階值SoR、SoG、SoB而點亮。The first processing circuit 162 refers to the data LUT read from the memory 164 to specify the output gray scale values SoR, SoGb, and SoB corresponding to the input gray scale values SiR, SiG, and SiB. The first processing circuit 162 outputs the output gray scale values SoR, SoG, and SoB to the pixel Pix. Each pixel 49 lights up based on the output grayscale values SoR, SoG, and SoB.

圖11係第1實施形態中用於說明輸出灰階值之設定方法之流程圖。如圖11所示,首先,信號處理電路160擷取入1圖框圖像(步驟S30)。具體而言,緩衝器166擷取入1圖框份之影像信號Vsig,且記憶與紅色、綠色、藍色各者對應之輸入灰階值SiR、SiG、SiB。Fig. 11 is a flowchart for explaining the setting method of the output gray scale value in the first embodiment. As shown in FIG. 11, first, the signal processing circuit 160 captures a 1-frame image (step S30). Specifically, the buffer 166 captures the image signal Vsig of 1 frame, and memorizes the input grayscale values SiR, SiG, and SiB corresponding to each of red, green, and blue.

第1處理電路162就每一像素Pix判斷輸入灰階值SiR是否大於0(步驟S32)。換言之,就每一像素Pix判斷是否存在紅色之顯示。於輸入灰階值SiR大於0之情形下(步驟S32;是),第1處理電路162將輸入灰階值SiR與臨限值Lth進行比較(步驟S34)。臨限值Lth之值雖為預設,但可任意地設定。於輸入灰階值SiR為臨限值Lth以下之情形下(步驟S34;是),第1處理電路162設定使輔助無機發光體100B(輔助像素49BB)點亮之輸出灰階值SoR,以設定之輸出灰階值SoR,使輔助無機發光體100B點亮(步驟S36)。The first processing circuit 162 determines whether the input gray scale value SiR is greater than 0 for each pixel Pix (step S32). In other words, it is judged whether there is a red display for each pixel Pix. When the input gray scale value SiR is greater than 0 (step S32; Yes), the first processing circuit 162 compares the input gray scale value SiR with the threshold value Lth (step S34). Although the value of the threshold Lth is preset, it can be set arbitrarily. When the input gray scale value SiR is below the threshold value Lth (step S34; Yes), the first processing circuit 162 sets the output gray scale value SoR for lighting the auxiliary phosphor 100B (auxiliary pixel 49BB) to set The output gray scale value SoR makes the auxiliary phosphor 100B light up (step S36).

於輸入灰階值SiR大於臨限值Lth之情形下(步驟S34;否),第1處理電路162判斷驅動電流值是否為電流臨限值Ith以下(步驟S38)。驅動電流值係於假定以輸出灰階值SoR使輔助無機發光體100B點亮之情形下,於輔助無機發光體100B中流通之電流值。第1處理電路162基於輸出灰階值SoR,算出驅動電流值。又,電流臨限值Ith值雖為預設,但可任意地設定。於驅動電流值為電流臨限值Ith以下之情形下(步驟S38;是),前進至步驟S36,以設定之輸出灰階值SoR,使輔助無機發光體100B點亮。When the input gray scale value SiR is greater than the threshold value Lth (step S34; No), the first processing circuit 162 determines whether the driving current value is less than the current threshold value Ith (step S38). The driving current value is the current value flowing in the auxiliary phosphor 100B assuming that the auxiliary phosphor 100B is lit with the output gray scale value SoR. The first processing circuit 162 calculates the drive current value based on the output gray scale value SoR. In addition, although the current threshold Ith value is preset, it can be set arbitrarily. When the driving current value is less than the current threshold value Ith (step S38; Yes), proceed to step S36 to light up the auxiliary phosphor 100B with the set output gray scale value SoR.

於驅動電流值大於電流臨限值Ith之情形下(步驟S38;否),第1處理電路162使輔助無機發光體100B、與相鄰無機發光體點亮(步驟S40)。相鄰無機發光體係與包含輔助無機發光體100B之像素Pix相鄰之像素Pix之無機發光體100中之發出與輔助無機發光體100B發出之光相同之波長頻帶之光之無機發光體100。亦即,此處,相鄰無機發光體係與包含輔助無機發光體100B之像素Pix相鄰之像素Pix中所含之第1單色無機發光體100RA、或包含於與包含輔助無機發光體100B之像素Pix相鄰之像素Pix且發出第1波長頻帶之光之輔助無機發光體100B。於步驟S40中,第1處理電路162設定:用於驅動輔助無機發光體100B之輸出灰階值SoR1、用於驅動相鄰無機發光體之輸出灰階值SoR2,以設定之輸出灰階值SoR1,使輔助無機發光體100B點亮,以設定之輸出灰階值SoR2,使相鄰無機發光體點亮。輸出灰階值SoR1設定為小於輸出灰階值SoR之值。When the driving current value is greater than the current threshold value Ith (step S38; No), the first processing circuit 162 turns on the auxiliary phosphor 100B and the adjacent phosphor (step S40). In the phosphor 100 of the adjacent phosphor 100 of the pixel Pix adjacent to the pixel Pix containing the auxiliary phosphor 100B, the phosphor 100 emits light in the same wavelength band as the light emitted by the auxiliary phosphor 100B. That is, here, the first monochromatic phosphor 100RA contained in the adjacent phosphor system and the pixel Pix adjacent to the pixel Pix containing the auxiliary phosphor 100B, or the first monochromatic phosphor 100RA contained in and contained in the pixel Pix containing the auxiliary phosphor 100B The pixel Pix adjacent to the pixel Pix emits the auxiliary phosphor 100B of light in the first wavelength band. In step S40, the first processing circuit 162 sets: the output gray scale value SoR1 for driving the auxiliary phosphor 100B, the output gray scale value SoR2 for driving the adjacent phosphor, to set the output gray scale value SoR1 , The auxiliary phosphor 100B is lit, and the adjacent phosphor is lit with the set output gray scale value SoR2. The output gray scale value SoR1 is set to a value smaller than the output gray scale value SoR.

又,於輸入灰階值SiR為0之情形下(步驟S32;否),第1處理電路162設定灰階值0來作為輸出灰階值SoR,不點亮輔助無機發光體100B(輔助像素49BB) (步驟S42)。In addition, when the input gray scale value SiR is 0 (step S32; No), the first processing circuit 162 sets the gray scale value 0 as the output gray scale value SoR, and does not light up the auxiliary phosphor 100B (auxiliary pixel 49BB ) (Step S42).

於本實施形態中,如上述般,控制輔助無機發光體100B之驅動(點亮)。In this embodiment, as described above, the driving (lighting) of the auxiliary phosphor 100B is controlled.

如以上所說明般,本實施形態之顯示裝置1具備:矩陣狀排列之複數個無機發光體100、及連接於複數個無機發光體100之對向電極(對向陰極電極90e)。複數個無機發光體100包含單色無機發光體100A、及輔助無機發光體100B。單色無機發光體100A可發出特定之波長頻帶之光。又,輔助無機發光體100B具備複數種輔助無機發光元件102B、及連接於該等輔助無機發光元件102B之電極(陽極電極112)。輔助無機發光體100B具備:在被供給電流之情形下可發出第1波長頻帶之光之第1輔助無機發光元件102RB、及在被供給電流之情形下可發出第2波長頻帶之光之第2輔助無機發光元件102GB,作為複數種輔助無機發光元件102B。(陽極電極112)連接於第1輔助無機發光元件102RB、及第2輔助無機發光元件102GB。而且,對向電極(對向陰極電極90e)連接於單色無機發光體100A、及第1輔助無機發光元件102RB,且未連接於第2輔助無機發光元件102GB。As described above, the display device 1 of this embodiment includes a plurality of phosphors 100 arranged in a matrix, and a counter electrode (a counter cathode electrode 90e) connected to the plurality of phosphors 100. The plural phosphors 100 include a monochromatic phosphor 100A and an auxiliary phosphor 100B. The monochromatic phosphor 100A can emit light in a specific wavelength band. In addition, the auxiliary phosphor 100B includes a plurality of kinds of auxiliary inorganic light-emitting elements 102B, and electrodes (anode electrodes 112) connected to the auxiliary inorganic light-emitting elements 102B. The auxiliary phosphor 100B includes: a first auxiliary inorganic light-emitting element 102RB that can emit light in the first wavelength band when current is supplied, and a second auxiliary inorganic light-emitting element 102RB that can emit light in the second wavelength band when current is supplied. The auxiliary inorganic light-emitting element 102GB serves as a plurality of auxiliary inorganic light-emitting elements 102B. The (anode electrode 112) is connected to the first auxiliary inorganic light-emitting element 102RB and the second auxiliary inorganic light-emitting element 102GB. In addition, the counter electrode (counter cathode electrode 90e) is connected to the monochromatic phosphor 100A and the first auxiliary phosphor 102RB, and is not connected to the second auxiliary phosphor 102GB.

本實施形態之顯示裝置1具備輔助無機發光元件102B。亦即,顯示裝置1由於即便於製造出不良無機發光體(不良無機發光元件102N)之情形下,亦可搭載輔助無機發光元件102B,而取代不良無機發光體,故抑制圖像顯示變得不適切,即便於在製造時發生不良之情形下,亦能夠設為可適切地使用之狀態。又,輔助無機發光體100B由於具備可發出互不相同波長頻帶之光之複數種輔助無機發光元件102B,故可藉由1種輔助無機發光體100B,替代所有種類之無機發光體100,可抑制換裝之負擔。The display device 1 of this embodiment includes an auxiliary inorganic light-emitting element 102B. That is, the display device 1 can also mount the auxiliary inorganic light-emitting element 102B instead of the defective inorganic light-emitting body even in the case where a defective inorganic light-emitting body (bad inorganic light-emitting element 102N) is manufactured, thereby preventing image display from becoming poor. Appropriate, even in the case of defects during manufacturing, it can be set to a state that can be used appropriately. In addition, since the auxiliary phosphor 100B is provided with a plurality of kinds of auxiliary phosphors 102B that can emit light in different wavelength bands, one auxiliary phosphor 100B can be used to replace all kinds of phosphors 100, which can suppress The burden of dressing.

又,第1輔助無機發光元件102RB發出之光之波長頻帶即第1波長頻帶跟與該第1輔助無機發光元件102RB包含於相同之像素PixB之單色無機發光體100A發出之光之波長頻帶不同。亦即,於1個像素Pix中,連接於對向陰極電極90e且成為可發光之狀態之第1輔助無機發光元件102RB發出之光之波長頻帶與單色無機發光體100A發出之光之波長頻帶不同。因而,顯示裝置1可藉由輔助無機發光體100B之第1輔助無機發光元件102RB,照射不良無機發光體應發光之光,藉由輔助無機發光體100B與單色無機發光體100A,可適切地表現顏色,可適切地顯示圖像。In addition, the wavelength band of the light emitted by the first auxiliary inorganic light-emitting element 102RB, that is, the first wavelength band is different from the wavelength band of the light emitted by the monochromatic phosphor 100A included in the same pixel PixB as the first auxiliary inorganic light-emitting element 102RB . That is, in one pixel Pix, the wavelength band of the light emitted by the first auxiliary inorganic light emitting element 102RB and the light emitted by the monochromatic phosphor 100A, which is connected to the opposite cathode electrode 90e and in a state capable of emitting light different. Therefore, the display device 1 can use the first auxiliary phosphor 102RB of the auxiliary phosphor 100B to irradiate the light that the poor phosphor should emit, and the auxiliary phosphor 100B and the monochromatic phosphor 100A can appropriately The color is expressed, and the image can be displayed appropriately.

又,第2輔助無機發光元件102GB發出之光之波長頻帶即第2波長頻帶,跟與該第2輔助無機發光元件102GB包含於相同之像素PixB之單色無機發光體100A發出之光之波長頻帶重疊。亦即,於1個像素PixB中,與對向陰極電極90e成為非連接且成為無法發光之狀態之第2輔助無機發光元件102GB發出之光之波長頻帶,與單色無機發光體100A發出之光之波長頻帶重疊。亦即,輔助無機發光體100B將發出與包含於相同之像素Pix之單色無機發光體100A相同之波長頻帶之光之第2輔助無機發光元件102GB設為無法發光之狀態。因而,顯示裝置1抑制色平衡崩壞崩,可適切地顯示圖像。In addition, the wavelength band of the light emitted by the second auxiliary inorganic light-emitting element 102GB, that is, the second wavelength band, is the same as the wavelength band of the light emitted by the monochromatic phosphor 100A included in the same pixel PixB as the second auxiliary inorganic light-emitting element 102GB overlapping. That is, in one pixel PixB, the wavelength band of the light emitted by the second auxiliary inorganic light-emitting element 102GB, which is disconnected from the opposite cathode electrode 90e and in a non-luminous state, is the same as the light emitted by the monochromatic phosphor 100A The wavelength bands overlap. That is, the auxiliary phosphor 100B sets the second auxiliary phosphor 102GB that emits light in the same wavelength band as the monochromatic phosphor 100A included in the same pixel Pix into a state where it cannot emit light. Therefore, the display device 1 suppresses the collapse of the color balance and can appropriately display an image.

又,第1輔助無機發光元件102RB及第2輔助無機發光元件102GB為柱狀,自作為軸向之第3方向Dz觀察之情形之第1輔助無機發光元件102RB之寬度(直徑DR)、與第2輔助無機發光元件102GB之寬度(直徑DG)不同。輔助無機發光體100B藉由將第1輔助無機發光元件102RB及第2輔助無機發光元件102GB設為柱狀,且使彼此之寬度不同,而即便例如構造相同,亦可使發出之波長頻帶不同。因此,可容易進行輔助無機發光體100B之製造。In addition, the first auxiliary phosphor 102RB and the second auxiliary phosphor 102GB are columnar, and the width (diameter DR) of the first auxiliary phosphor 102RB and the second auxiliary phosphor 102RB when viewed from the third direction Dz as the axial direction 2 The width (diameter DG) of the auxiliary inorganic light-emitting element 102GB is different. In the auxiliary phosphor 100B, the first auxiliary phosphor 102RB and the second auxiliary phosphor 102GB are columnar and have different widths. For example, even if the structure is the same, the emitted wavelength bands can be different. Therefore, the auxiliary phosphor 100B can be easily manufactured.

又,於自無機發光體100與對向電極(對向陰極電極90e)排列之方向、亦即第3方向Dz觀察之情形下,設置1個輔助無機發光體100B之區域較設置1個單色無機發光體100A之區域更廣。藉由將輔助無機發光體100B形成地更廣,而可抑制發光之輔助無機發光元件102B之面積變得過小,且抑制來自輔助無機發光元件102B之光之強度變得過弱。因此,根據該顯示裝置1,抑制色平衡崩壞崩,可適切地顯示圖像。In addition, in the case of viewing from the direction in which the phosphor 100 and the counter electrode (counter cathode electrode 90e) are arranged, that is, the third direction Dz, the area where one auxiliary phosphor 100B is provided is better than the area where one auxiliary phosphor 100B is provided. The area of the phosphor 100A is wider. By forming the auxiliary phosphor 100B wider, the area of the auxiliary phosphor 102B that can suppress light emission becomes too small, and the intensity of the light from the auxiliary phosphor 102B is suppressed from becoming too weak. Therefore, according to the display device 1, the collapse of the color balance is suppressed, and an image can be appropriately displayed.

又,於自第3方向Dz觀察之情形下,設置第1輔助無機發光元件102RB之區域103RB之面積、與設置第2輔助無機發光元件102GB之區域103GB之面積不同。藉由如上述般就輔助無機發光元件102B之每一種類使面積不同,而可適切地表現顏色,可適切地顯示圖像。Furthermore, when viewed from the third direction Dz, the area of the region 103RB where the first auxiliary inorganic light-emitting element 102RB is provided is different from the area of the region 103GB where the second auxiliary inorganic light-emitting element 102GB is provided. By making the area different for each type of the auxiliary inorganic light-emitting element 102B as described above, the color can be appropriately expressed, and the image can be appropriately displayed.

又,輔助無機發光體100B更具備在被供給電流之情形下可發出第3波長頻帶之光之第3輔助無機發光元件102BB。對向電極(對向陰極電極90e)未連接於第3輔助無機發光元件102BB。輔助無機發光體100B藉由具備第1輔助無機發光元件102RB、第2輔助無機發光元件102GB、及第3輔助無機發光元件102BB,而無論哪一色之無機發光體100為不良,均可以輔助無機發光體100B予以替代。In addition, the auxiliary phosphor 100B further includes a third auxiliary phosphor 102BB that can emit light in the third wavelength band when current is supplied. The counter electrode (counter cathode electrode 90e) is not connected to the third auxiliary inorganic light emitting element 102BB. The auxiliary phosphor 100B is provided with the first auxiliary phosphor 102RB, the second auxiliary phosphor 102GB, and the third auxiliary phosphor 102BB, and no matter which color of the phosphor 100 is defective, it can assist inorganic luminescence. Body 100B is replaced.

又,無機發光體100包含:可發出第2波長頻帶之光之單色無機發光體100A(第2單色無機發光體100GA)、及可發出第3波長頻帶之光之單色無機發光體100A(第3單色無機發光體100BA)。顯示裝置1由於具備發出第1波長頻帶之光之輔助無機發光體100B、及可發出第2波長頻帶及第3波長頻帶之光之單色無機發光體100A,故可適切地表現色,可適切地顯示圖像。In addition, the phosphor 100 includes: a monochromatic phosphor 100A (second monochromatic phosphor 100GA) capable of emitting light in the second wavelength band, and a monochromatic phosphor 100A capable of emitting light in the third wavelength band (The third monochromatic phosphor 100BA). Since the display device 1 is equipped with an auxiliary phosphor 100B that emits light in the first wavelength band, and a monochromatic phosphor 100A that emits light in the second and third wavelength bands, it can appropriately express colors and is suitable for To display the image.

又,本實施形態之顯示裝置1之製造方法包含:單色無機發光體形成步驟、輔助無機發光體形成步驟、及對向電極形成步驟。於單色無機發光體形成步驟中,形成可發出特定之波長頻帶之光之單色無機發光體100A。在輔助無機發光體形成步驟中,形成輔助無機發光體100B,該輔助無機發光體100B具備:於被施加電壓之情形下可發出第1波長頻帶之光之第1輔助無機發光元件102RB、於被施加電壓之情形下可發出第2波長頻帶之光之第2輔助無機發光元件102GB、及連接於第1輔助無機發光元件102RB與第2輔助無機發光元件102GB之電極(陽極電極112)。於對向電極形成步驟中,形成對向電極(對向陰極電極90e),該對向電極(對向陰極電極90e)連接於單色無機發光體100A及第1輔助無機發光元件102RB,且未連接於第2輔助無機發光元件102GB。根據該製造方法,由於即便於製造出不良無機發光體之情形下,亦可搭載輔助無機發光元件102B,而取代不良無機發光體,故即便於在製造時發生不良之情形下,亦能夠設為可適切地使用之狀態。又,輔助無機發光體100B由於具備可發出互不相同波長頻帶之光之複數種輔助無機發光元件102B,故可藉由1種輔助無機發光體100B,替代所有種類之無機發光體100,可抑制換裝之負擔。In addition, the manufacturing method of the display device 1 of this embodiment includes a step of forming a monochromatic phosphor, a step of forming an auxiliary phosphor, and a step of forming a counter electrode. In the step of forming a monochromatic phosphor, a monochromatic phosphor 100A that can emit light in a specific wavelength band is formed. In the auxiliary phosphor forming step, an auxiliary phosphor 100B is formed. The auxiliary phosphor 100B includes: a first auxiliary phosphor 102RB that can emit light in the first wavelength band when a voltage is applied; The second auxiliary inorganic light-emitting element 102GB that can emit light in the second wavelength band when a voltage is applied, and the electrode (anode electrode 112) connected to the first auxiliary inorganic light-emitting element 102RB and the second auxiliary inorganic light-emitting element 102GB. In the step of forming the counter electrode, a counter electrode (counter cathode electrode 90e) is formed, and the counter electrode (counter cathode electrode 90e) is connected to the monochromatic phosphor 100A and the first auxiliary phosphor 102RB. Connected to the second auxiliary inorganic light-emitting element 102GB. According to this manufacturing method, even when a poor phosphor is manufactured, the auxiliary phosphor 102B can be mounted instead of the poor phosphor, so even if a defect occurs during manufacturing, it can be set as A state that can be used appropriately. In addition, since the auxiliary phosphor 100B is provided with a plurality of kinds of auxiliary phosphors 102B that can emit light in different wavelength bands, one auxiliary phosphor 100B can be used to replace all kinds of phosphors 100, which can suppress The burden of dressing.

(第2實施形態) 其次,針對第2實施形態進行說明。在第1實施形態中,於像素Pix首先預先搭載單色無機發光體100A,將成為不良之單色無機發光體100A換裝為輔助無機發光體100B。另一方面,在第2實施形態中,於所有像素Pixa預先搭載輔助無機發光體100B。於第2實施形態中,構成與第1實施形態共通之部位省略說明。(Second Embodiment) Next, the second embodiment will be described. In the first embodiment, the single-color phosphor 100A is first mounted in the pixel Pix, and the defective single-color phosphor 100A is replaced with an auxiliary phosphor 100B. On the other hand, in the second embodiment, the auxiliary phosphor 100B is mounted in advance in all the pixels Pixa. In the second embodiment, descriptions of the parts that are common to the first embodiment are omitted.

圖12係顯示第2實施形態之複數個像素之平面圖。如圖12所示,第2實施形態之顯示裝置1a矩陣狀排列有複數個像素Pixa。像素Pixa包含單色像素49A、及輔助像素49BB。更具體而言,像素Pixa包含:3個單色像素49A即第1像素49R、第2像素49G、第3像素49B、及1個輔助像素49BB。換言之,像素Pixa包含:3個單色無機發光體100A即第1單色無機發光體100RA、第2單色無機發光體100GA、及第3單色無機發光體100BA、以及1個輔助無機發光體100B。Fig. 12 is a plan view showing a plurality of pixels in the second embodiment. As shown in FIG. 12, the display device 1a of the second embodiment has a plurality of pixels Pixa arranged in a matrix. The pixel Pixa includes a monochrome pixel 49A and an auxiliary pixel 49BB. More specifically, the pixel Pixa includes three monochromatic pixels 49A, that is, a first pixel 49R, a second pixel 49G, a third pixel 49B, and one auxiliary pixel 49BB. In other words, the pixel Pixa includes: three single-color phosphors 100A, namely, the first single-color phosphor 100RA, the second single-color phosphor 100GA, and the third single-color phosphor 100BA, and one auxiliary phosphor 100B.

此處,將像素Pixa中之於單色無機發光體100A未產生不良之像素設為像素PixAa,將於單色無機發光體100A產生不良之像素設為像素PixBa。像素PixAa由於在單色無機發光體100A未產生不良,故第1單色無機發光體100RA、第2單色無機發光體100GA、及第3單色無機發光體100BA可發出各個波長頻帶之光。因而,像素PixAa之輔助無機發光體100B中所含之所有輔助無機發光元件102B(第1輔助無機發光元件102RB、第2輔助無機發光元件102GB、及第3輔助無機發光元件102BB)與對向陰極電極90e成為非連接,而成為無法發光之狀態。Here, among the pixels Pixa, a pixel that has no defect in the monochromatic phosphor 100A is referred to as the pixel PixAa, and a pixel that has a defect in the monochromatic phosphor 100A is referred to as the pixel PixBa. Since the pixel PixAa has no defects in the monochromatic phosphor 100A, the first monochromatic phosphor 100RA, the second monochromatic phosphor 100GA, and the third monochromatic phosphor 100BA can emit light in each wavelength band. Therefore, all the auxiliary phosphors 102B (the first auxiliary phosphor 102RB, the second auxiliary phosphor 102GB, and the third auxiliary phosphor 102BB) contained in the auxiliary phosphor 100B of the pixel PixAa and the opposite cathode The electrode 90e becomes disconnected and becomes a state where it cannot emit light.

另一方面,像素PixBa於單色無機發光體100A之一部分產生不良,換言之,第1單色無機發光體100RA、第2單色無機發光體100GA、及第3單色無機發光體100BA之至少一者成為無法發光之狀態。因此,像素PixBa之輔助無機發光體100B中所含之輔助無機發光元件102B中之一部分、更詳細而言發出與成為無法發光之狀態之單色無機發光體100A相同之波長頻帶之光之輔助無機發光元件102B,與對向陰極電極90e連接,而成為可發光之狀態。另一方面,像素PixBa之發出與成為無法發光之狀態之單色無機發光體100A不同之波長頻帶之光之輔助無機發光元件102B,與對向陰極電極90e成為非連接,而成為無法發光之狀態。於以後之說明中,以像素PixBa之第1單色無機發光體100RA成為不良而成為無法發光之狀態之情形為例。此情形下,像素PixBa之輔助無機發光體100B之第1輔助無機發光元件102RB成為可發光之狀態,第2輔助無機發光元件102GB及第3輔助無機發光元件102BB成為無法發光之狀態。此外,以下,將成為不良之單色無機發光體100A適宜地記載為不良無機發光體100N。On the other hand, the pixel PixBa is defective in a part of the monochromatic phosphor 100A, in other words, at least one of the first monochromatic phosphor 100RA, the second monochromatic phosphor 100GA, and the third monochromatic phosphor 100BA The person becomes unable to emit light. Therefore, a part of the auxiliary inorganic light-emitting element 102B contained in the auxiliary phosphor 100B of the pixel PixBa, more specifically, the auxiliary inorganic light that emits light in the same wavelength band as the monochromatic phosphor 100A that cannot emit light The light-emitting element 102B is connected to the opposite cathode electrode 90e and becomes a state capable of emitting light. On the other hand, the auxiliary inorganic light-emitting element 102B that emits light in a wavelength band different from that of the monochromatic phosphor 100A in a non-luminous state of the pixel PixBa is disconnected from the counter cathode electrode 90e, and is in a non-luminous state. . In the following description, a case where the first single-color phosphor 100RA of the pixel PixBa becomes defective and becomes in a state where it cannot emit light as an example. In this case, the first auxiliary phosphor 102RB of the auxiliary phosphor 100B of the pixel PixBa becomes a state capable of emitting light, and the second auxiliary phosphor 102GB and the third auxiliary phosphor 102BB become unable to emit light. In addition, hereinafter, the single-color phosphor 100A that becomes defective is appropriately described as the defective inorganic light 100N.

如此,在第2實施形態中,於1個像素Pixa,設置3個單色無機發光體100A與1個輔助無機發光體100B。因而,於第2實施形態中,第1輔助無機發光元件102RB發出之光之波長頻帶即第1波長頻帶,跟與該第1輔助無機發光元件102RB包含於相同之像素Pixa之單色無機發光體100A(第1單色無機發光體100RA)發出之光之波長頻帶重疊。亦即,在第2實施形態中,於1個像素Pixa中,連接於對向陰極電極90e且成為可發光之狀態之輔助無機發光元件102B發出之光之波長頻帶,與假定包含於相同之像素Pixa之單色無機發光體100A發光之情形之光之波長頻帶重疊。In this way, in the second embodiment, three monochromatic phosphors 100A and one auxiliary phosphor 100B are provided in one pixel Pixa. Therefore, in the second embodiment, the wavelength band of the light emitted by the first auxiliary inorganic light emitting element 102RB, that is, the first wavelength band, follows the monochromatic phosphor included in the same pixel Pixa as the first auxiliary inorganic light emitting element 102RB. The wavelength bands of light emitted by 100A (first monochromatic phosphor 100RA) overlap. That is, in the second embodiment, in one pixel Pixa, the wavelength band of the light emitted by the auxiliary inorganic light emitting element 102B connected to the opposite cathode electrode 90e and in a state capable of emitting light is the same as that assumed to be included in the same pixel When the Pixa monochromatic phosphor 100A emits light, the wavelength bands of light overlap.

圖13係說明第2實施形態之顯示裝置之製造方法之示意圖。如圖13所示,於第2實施形態之顯示裝置1a之製造方法中,如步驟S50所示般,形成陣列基板2,於陣列基板2上形成單色無機發光元件102A。具體而言,將形成於形成基板200上之單色無機發光元件102A搭載於陣列基板2上。單色無機發光元件102A向陣列基板2上之搭載方法與第1實施形態同樣。惟,於第2實施形態中,由於在將所有單色無機發光元件102A搭載於陣列基板2上後,亦搭載輔助無機發光元件102B(輔助無機發光元件集合體101B),故未搭載單色無機發光元件102A之陽極電極112殘留。FIG. 13 is a schematic diagram illustrating the manufacturing method of the display device of the second embodiment. As shown in FIG. 13, in the manufacturing method of the display device 1a of the second embodiment, as shown in step S50, the array substrate 2 is formed, and the monochromatic inorganic light-emitting element 102A is formed on the array substrate 2. Specifically, the monochromatic inorganic light emitting element 102A formed on the formation substrate 200 is mounted on the array substrate 2. The mounting method of the monochromatic inorganic light-emitting element 102A on the array substrate 2 is the same as in the first embodiment. However, in the second embodiment, after all the single-color inorganic light-emitting elements 102A are mounted on the array substrate 2, the auxiliary inorganic light-emitting element 102B (auxiliary inorganic light-emitting element assembly 101B) is also mounted, so the single-color inorganic light-emitting element 102A is not mounted. The anode electrode 112 of the light-emitting element 102A remains.

其次,如步驟S52所示般,於未搭載單色無機發光元件102A之陽極電極112上,搭載輔助無機發光元件集合體101B(包含1個輔助無機發光體100B之所有輔助無機發光元件102B之集合體)。藉此,於陣列基板2上,形成單色無機發光元件102A與輔助無機發光元件102B。Next, as shown in step S52, on the anode electrode 112 that is not equipped with the single-color phosphor 102A, an auxiliary phosphor assembly 101B (a set of all auxiliary phosphors 102B including one auxiliary phosphor 100B) is mounted body). In this way, the single-color inorganic light-emitting element 102A and the auxiliary inorganic light-emitting element 102B are formed on the array substrate 2.

其次,如步驟S54所示般,藉由將檢查用基板202連接於陣列基板2上之單色無機發光元件102A,並執行點亮檢查,而檢測單色無機發光元件102A之不良、亦即不良無機發光元件102N。不良無機發光元件102N之檢測方法與第1實施形態同樣。此外,步驟S54可較步驟S52靠前地、亦即於輔助無機發光元件集合體101B之搭載前實施。Next, as shown in step S54, by connecting the inspection substrate 202 to the monochromatic inorganic light emitting element 102A on the array substrate 2, and performing a lighting inspection, the defect of the monochromatic inorganic light emitting element 102A, that is, the defect is detected Inorganic light-emitting element 102N. The detection method of the defective inorganic light-emitting element 102N is the same as that of the first embodiment. In addition, step S54 can be performed before step S52, that is, before the auxiliary inorganic light-emitting element assembly 101B is mounted.

其次,如步驟S56所示般,於陣列基板2上,形成單色無機發光體100A、輔助無機發光體100B、絕緣膜70、平坦化膜80、及對向陰極電極90e。具體而言,於單色無機發光元件102A與輔助無機發光元件102B各者上,形成陰極電極114。藉此,於陣列基板2上,形成單色無機發光體100A、與輔助無機發光體100B。而後,於未形成單色無機發光體100A、及輔助無機發光體100B之空間,填充絕緣膜70與平坦化膜80。而後,於單色無機發光體100A與輔助無機發光體100B上,形成對向陰極電極90e。此處,以連接於所有單色無機發光體100A與輔助無機發光體100B之方式,形成對向陰極電極90e。第2實施形態雖然於將不良無機發光元件102N殘留而未自顯示裝置1a去除之點上與第1實施形態不同,但於第2實施形態中,亦可自顯示裝置1a去除不良無機發光元件102N。Next, as shown in step S56, on the array substrate 2, the monochromatic phosphor 100A, the auxiliary phosphor 100B, the insulating film 70, the planarizing film 80, and the counter cathode electrode 90e are formed. Specifically, a cathode electrode 114 is formed on each of the monochromatic inorganic light-emitting element 102A and the auxiliary inorganic light-emitting element 102B. In this way, the monochromatic phosphor 100A and the auxiliary phosphor 100B are formed on the array substrate 2. Then, the insulating film 70 and the planarizing film 80 are filled in the space where the single-color phosphor 100A and the auxiliary phosphor 100B are not formed. Then, the opposite cathode electrode 90e is formed on the monochromatic phosphor 100A and the auxiliary phosphor 100B. Here, the opposite cathode electrode 90e is formed so as to be connected to all the single-color phosphors 100A and the auxiliary phosphor 100B. Although the second embodiment is different from the first embodiment in that the defective inorganic light-emitting element 102N remains and is not removed from the display device 1a, in the second embodiment, the defective inorganic light-emitting element 102N can also be removed from the display device 1a. .

當形成單色無機發光體100A及輔助無機發光體100B後,去除連接於輔助無機發光體100B之對向陰極電極90e。於去除對向陰極電極90e之工序中,對於檢測到不良無機發光元件102N之像素PixBa,執行步驟S58A,對於未檢測到不良無機發光元件102N之像素PixAa,執行步驟S58B。After the monochromatic phosphor 100A and the auxiliary phosphor 100B are formed, the opposite cathode electrode 90e connected to the auxiliary phosphor 100B is removed. In the process of removing the opposite cathode electrode 90e, step S58A is performed for the pixel PixBa where the defective inorganic light-emitting element 102N is detected, and step S58B is performed for the pixel PixAa where the defective inorganic light-emitting element 102N is not detected.

首先,針對步驟S58A進行說明。於步驟S58A中,去除連接於像素PixBa中所含之輔助無機發光體100B之對向陰極電極90e之一部分、及該輔助無機發光體100B之陰極電極114之一部分。具體而言,去除對向陰極電極90e及陰極電極114之連接於輔助無機發光體100B之第2輔助無機發光元件102GB之部分、及連接於輔助無機發光體100B之第3輔助無機發光元件102BB之部分。亦即,設為使對向陰極電極90e及陰極電極114,針對發出與當不良無機發光元件102N為正常之狀態時發出之波長頻帶之光相同之波長頻帶之光之輔助無機發光元件102B連接之狀態。而且,針對發出與當不良無機發光元件102N為正常之狀態時發出之波長頻帶之光不同之波長頻帶之光之輔助無機發光元件102B,將對向陰極電極90e及陰極電極114設為非連接之狀態。步驟S58A之對向陰極電極90e與陰極電極114之去除方法與第1實施形態同樣。First, step S58A will be described. In step S58A, a part of the opposite cathode electrode 90e connected to the auxiliary phosphor 100B contained in the pixel PixBa and a part of the cathode electrode 114 of the auxiliary phosphor 100B are removed. Specifically, the portion of the opposite cathode electrode 90e and the cathode electrode 114 connected to the second auxiliary phosphor 100B of the auxiliary phosphor 100B and the third auxiliary phosphor 102BB connected to the auxiliary phosphor 100B are removed. part. That is, it is assumed that the opposing cathode electrode 90e and the cathode electrode 114 are connected to the auxiliary inorganic light emitting element 102B that emits light in the same wavelength band as the light emitted when the defective inorganic light emitting element 102N is in a normal state. state. Furthermore, for the auxiliary inorganic light emitting element 102B that emits light in a wavelength band different from the light in the wavelength band emitted when the defective inorganic light emitting element 102N is in a normal state, the opposite cathode electrode 90e and the cathode electrode 114 are set to be disconnected state. The method of removing the opposite cathode electrode 90e and the cathode electrode 114 in step S58A is the same as in the first embodiment.

當執行步驟S58A後,如步驟S60A所示般,於去除對向陰極電極90e之一部分與陰極電極114之一部分而形成之空間AR填充絕緣體80B。After step S58A is performed, as shown in step S60A, the space AR formed by removing a part of the opposite cathode electrode 90e and a part of the cathode electrode 114 is filled with the insulator 80B.

另一方面,在步驟S58B中,去除連接於像素PixAa中所含之輔助無機發光體100B之對向陰極電極90e、及該輔助無機發光體100B之陰極電極114。具體而言,去除對向陰極電極90e及陰極電極114之連接於輔助無機發光體100B之所有輔助無機發光元件102B之對向陰極電極90e與陰極電極114。亦即,對於輔助無機發光體100B之所有輔助無機發光元件102B,將對向陰極電極90e及陰極電極114,設為非連接之狀態。當執行步驟S58B後,如步驟S60B所示般,於去除對向陰極電極90e與陰極電極114而形成之空間AR填充絕緣體80B。On the other hand, in step S58B, the counter cathode electrode 90e connected to the auxiliary phosphor 100B contained in the pixel PixAa and the cathode electrode 114 of the auxiliary phosphor 100B are removed. Specifically, the opposite cathode electrode 90e and the cathode electrode 114 of all the auxiliary phosphor elements 102B connected to the auxiliary phosphor 100B of the opposite cathode electrode 90e and the cathode electrode 114 are removed. That is, for all the auxiliary inorganic light emitting elements 102B of the auxiliary phosphor 100B, the opposite cathode electrode 90e and the cathode electrode 114 are set in a non-connected state. After step S58B is performed, as shown in step S60B, the space AR formed by removing the opposite cathode electrode 90e and the cathode electrode 114 is filled with the insulator 80B.

如以上所說明般,在第2實施形態中,於像素Pixa預先搭載3個單色無機發光體100A、及1個輔助無機發光體100B。因而,即便於1個單色無機發光體100A成為不良之情形下,亦可以輔助無機發光體100B予以替代。進而,藉由預先搭載輔助無機發光體100B,而無需去除不良無機發光體100N並換裝為輔助無機發光體100B之工序,可降低作業負載。As described above, in the second embodiment, three monochromatic phosphors 100A and one auxiliary phosphor 100B are mounted in the pixel Pixa in advance. Therefore, even when one single-color phosphor 100A becomes defective, the auxiliary phosphor 100B can be replaced. Furthermore, by pre-installing the auxiliary phosphor 100B, there is no need to remove the defective phosphor 100N and replace it with the auxiliary phosphor 100B, thereby reducing the work load.

又,如第2實施形態般,於在像素Pixa搭載3個單色無機發光體100A與1個輔助無機發光體100B之情形下,於在單色無機發光體100A無不良其可發光之情形下、或於單色無機發光體100A雖然可發光但因連接不良等,光之強度較低之情形下等,亦可使輔助無機發光體100B發光。此情形下,可藉由輔助無機發光體100B,補強1個單色無機發光體100A發出之光之強度。亦即,藉由於1個像素Pixa中,使3個單色無機發光體100A與1個輔助無機發光體100B發光,而可提高1個單色無機發光體100A發出之波長頻帶之光之強度。以下,針對該情形之驅動方法進行說明。以下,以輔助無機發光體100B、亦即輔助像素49BB發出第1波長頻帶之光、此處為紅色之光之情形為例進行說明。Also, as in the second embodiment, in the case where three monochromatic phosphors 100A and one auxiliary phosphor 100B are mounted in the pixel Pixa, in the case where the monochromatic phosphor 100A can emit light without defects Or in the case where the monochromatic phosphor 100A can emit light but the light intensity is low due to poor connection, etc., the auxiliary phosphor 100B can also be made to emit light. In this case, the auxiliary phosphor 100B can be used to enhance the intensity of the light emitted by a single monochromatic phosphor 100A. That is, by making three monochromatic phosphors 100A and one auxiliary phosphor 100B emit light in one pixel Pixa, the intensity of the light in the wavelength band emitted by one monochromatic phosphor 100A can be increased. The following describes the driving method for this situation. Hereinafter, a case where the auxiliary phosphor 100B, that is, the auxiliary pixel 49BB emits light in the first wavelength band, which is red light here, will be described as an example.

圖14係用於在第2實施形態中,說明輸出灰階值之設定方法之流程圖。如圖14所示,首先,信號處理電路160擷取入1圖框圖像(步驟S70)。具體而言,緩衝器166擷取入1圖框份之影像信號Vsig,且記憶與紅色、綠色、藍色各者對應之輸入灰階值SiR、SiG、SiB。Fig. 14 is a flowchart for explaining the method of setting the output grayscale value in the second embodiment. As shown in FIG. 14, first, the signal processing circuit 160 captures a 1-frame image (step S70). Specifically, the buffer 166 captures the image signal Vsig of 1 frame, and memorizes the input grayscale values SiR, SiG, and SiB corresponding to each of red, green, and blue.

第1處理電路162就每一像素Pix判斷輸入灰階值SiR是否大於0(步驟S72)。換言之,就每一像素Pixa判斷是否存在紅色之顯示。於輸入灰階值SiR大於0之情形(步驟S72;是)下,第1處理電路162將輸入灰階值SiR與臨限值Lth進行比較(步驟S74)。臨限值Lth之值雖然被預設,但可任意地設定。於輸入灰階值SiR為臨限值Lth以下之情形下(步驟S74;是),第1處理電路162不點亮第1單色無機發光體100RA(第1像素49R),使輔助無機發光體100B(輔助像素49BB)點亮(步驟S76)。具體而言,第1處理電路162設定輸出灰階值SoR,以設定之輸出灰階值SoR使輔助無機發光體100B點亮。The first processing circuit 162 determines whether the input gray scale value SiR is greater than 0 for each pixel Pix (step S72). In other words, it is judged whether there is a red display for each pixel Pixa. When the input gray scale value SiR is greater than 0 (step S72; Yes), the first processing circuit 162 compares the input gray scale value SiR with the threshold value Lth (step S74). Although the value of the threshold Lth is preset, it can be set arbitrarily. When the input gray scale value SiR is below the threshold value Lth (step S74; Yes), the first processing circuit 162 does not light up the first monochromatic phosphor 100RA (first pixel 49R), and makes the auxiliary phosphor 100B (the auxiliary pixel 49BB) lights up (step S76). Specifically, the first processing circuit 162 sets the output gray scale value SoR, and lights the auxiliary phosphor 100B with the set output gray scale value SoR.

於輸入灰階值SiR大於臨限值Lth之情形下(步驟S74;否),第1處理電路162判斷驅動電流值是否為電流臨限值Ith以下(步驟S78)。驅動電流值係於假定以輸出灰階值SoR使輔助無機發光體100B點亮之情形下,於輔助無機發光體100B流通之電流值。第1處理電路162基於輸出灰階值SoR算出驅動電流值。又,電流臨限值Ith值雖然被預設,但可任意地設定。於驅動電流值為電流臨限值Ith以下之情形下(步驟S78;是),第1處理電路162使第1單色無機發光體100RA與輔助無機發光體100B之兩者點亮(步驟S79)。具體而言,第1處理電路162設定輸出灰階值SoR1a、SoR2a,以設定之輸出灰階值SoR1a使輔助無機發光體100B點亮,以設定之輸出灰階值SoR2a使第1單色無機發光體100RA點亮。第1處理電路162例如以輸出灰階值SoR1a、SoR2a之合計值成為輸出灰階值SoR之方式,設定輸出灰階值SoR1amSoR2a。When the input gray scale value SiR is greater than the threshold value Lth (step S74; No), the first processing circuit 162 determines whether the driving current value is less than the current threshold value Ith (step S78). The driving current value is the current value flowing in the auxiliary phosphor 100B assuming that the auxiliary phosphor 100B is lit by the output gray scale value SoR. The first processing circuit 162 calculates the drive current value based on the output gray scale value SoR. In addition, although the current threshold Ith value is preset, it can be set arbitrarily. When the driving current value is less than the current threshold value Ith (step S78; Yes), the first processing circuit 162 lights up both the first monochromatic phosphor 100RA and the auxiliary phosphor 100B (step S79) . Specifically, the first processing circuit 162 sets the output gray scale values SoR1a and SoR2a, uses the set output gray scale value SoR1a to light up the auxiliary phosphor 100B, and uses the set output gray scale value SoR2a to make the first monochromatic inorganic luminescence Body 100RA lights up. The first processing circuit 162, for example, sets the output gray scale value SoR1amSoR2a so that the total value of the output gray scale values SoR1a and SoR2a becomes the output gray scale value SoR.

於驅動電流值大於電流臨限值Ith之情形下(步驟S78;否),第1處理電路162使第1單色無機發光體100RA、輔助無機發光體100B、及相鄰無機發光體點亮(步驟S80)。相鄰無機發光體係與包含輔助無機發光體100B之像素Pixa相鄰之像素Pixa之無機發光體100中之發出與輔助無機發光體100B發出之光相同之波長頻帶之光之無機發光體100。於步驟S78中,第1處理電路162設定輸出灰階值SoR1b、SoR2b、SoR3b,以設定之輸出灰階值SoR1b使輔助無機發光體100B點亮,以設定之輸出灰階值SoR2b使第1單色無機發光體100RA點亮,以設定之輸出灰階值SoR3b使相鄰無機發光體點亮。第1處理電路162例如以輸出灰階值SoR1b、SoR2b、SoR3b之合計值成為輸出灰階值SoR之方式,設定輸出灰階值SoR1b、SoR2b、SoR3b。In the case where the driving current value is greater than the current threshold Ith (step S78; No), the first processing circuit 162 turns on the first monochromatic phosphor 100RA, auxiliary phosphor 100B, and adjacent phosphors ( Step S80). In the adjacent phosphor 100 of the phosphor 100 of the pixel Pixa adjacent to the pixel Pixa including the auxiliary phosphor 100B, the phosphor 100 emits light in the same wavelength band as the light emitted by the auxiliary phosphor 100B. In step S78, the first processing circuit 162 sets the output grayscale values SoR1b, SoR2b, SoR3b, uses the set output grayscale value SoR1b to light up the auxiliary phosphor 100B, and uses the set output grayscale value SoR2b to make the first single The color phosphor 100RA is lit, and the adjacent phosphor is lit with the set output gray scale value SoR3b. The first processing circuit 162, for example, sets the output gray scale values SoR1b, SoR2b, and SoR3b so that the total value of the output gray scale values SoR1b, SoR2b, and SoR3b becomes the output gray scale value SoR.

又,於輸入灰階值SiR為0之情形下(步驟S72;否),第1處理電路162設定灰階值0作為輸出灰階值SoR,不點亮第1單色無機發光體100RA、與輔助無機發光體100B(步驟S82)。In addition, when the input gray scale value SiR is 0 (step S72; No), the first processing circuit 162 sets the gray scale value 0 as the output gray scale value SoR, and does not light up the first monochromatic phosphor 100RA, and The auxiliary phosphor 100B (step S82).

又,針對由在本實施形態中所述之態樣所帶來之其他之作用效果,若係根據本說明書記載而明確者,或由熟悉此項技術者可適宜地想到者,應當理解為係由本發明所帶來之作用效果。In addition, with regard to other functions and effects brought about by the aspects described in this embodiment, if they are clarified based on the description in this specification, or those that can be appropriately thought of by those familiar with the technology, they should be understood as being related The effect brought by the present invention.

1,1a:顯示裝置 2:陣列基板 10:基板 10a:第1面 10b:第2面 12:驅動電路 20:底塗層 21:第1閘極電極 24,29,35,42,45:絕緣膜 25:半導體層 27:通道區域 31:第2閘極電極 31a:閘極線 41d:汲極電極 41s:源極電極 43d:汲極連接配線 43s:源極連接配線 49:像素 49A:單色像素 49B:第3像素 49BB:輔助像素 49G:第2像素 49R:第1像素 50e:對向陽極電極 50f:連接層 52:連接導電部 60:陰極配線 66:絕緣膜 70:絕緣膜 80:平坦化膜 80B:絕緣體 90e:對向陰極電極 92:罩部 100:無機發光體 100A:單色無機發光體 100B:輔助無機發光體 100BA:第3單色無機發光體 100GA:第2單色無機發光體 100N:不良無機發光體 100RA:第1單色無機發光體 101B:輔助無機發光元件集合體 102:無機發光元件 102A:單色無機發光元件 102B:輔助無機發光元件 102BA:第3單色無機發光元件 102BB:第3輔助無機發光元件 102GA:第2單色無機發光元件 102GB:第2輔助無機發光元件/第2無機發光元件 102N:不良無機發光元件 102RA:第1單色無機發光元件 102RB:第1輔助無機發光元件 103BB:第3區域 103GB:第2區域/區域 103RB:第1區域/區域 104,104B:n型包層 106,106B:p型包層 108,108B:發光層 109:保護層 112:陽極電極 114:陰極電極 160:信號處理電路 162:第1處理電路 164:記憶體 166:緩衝器 200:形成基板 202:檢查用基板 202A:導電部 202B:基部 210:驅動IC AA:顯示區域 AR:空間 BCT:發光控制電晶體 BG:發光控制掃描線 CH1:接觸孔 Cs1:保持電容/電容 Cs2:電容 DB,DG,DR:直徑 DRT:驅動電晶體 Dx:第1方向 Dy:第2方向 Dz:第3方向 GA:周邊區域 IG:初始化控制掃描線 IST:初始化電晶體 L1:陽極電源線 L2:影像信號線 L3:重置信號線 L4:初始化信號線 L10:陰極電源線 LI,LIa:雷射光 PICA:像素電路 Pix,Pixa,PixA,PixAa,PixB,PixBa:像素 PVDD:陽極電源電位 PVSS:陰極電源電位 RG:重置控制掃描線 RST:重置電晶體 SG:寫入控制掃描線 SiB,SiG,SiR:輸入灰階值 SoB,SoGb,SoR:輸出灰階值 SST:寫入電晶體 Tr,TrC:電晶體 Vbg:發光控制信號 Vig:初始化控制信號 Vini:初始化電位 Vrg:重置控制信號 Vrst:重置電源電位 Vsg:寫入控制信號 Vsig:影像信號1,1a: display device 2: Array substrate 10: substrate 10a: side 1 10b: Side 2 12: Drive circuit 20: Primer 21: The first gate electrode 24, 29, 35, 42, 45: insulating film 25: Semiconductor layer 27: Channel area 31: 2nd gate electrode 31a: gate line 41d: Drain electrode 41s: source electrode 43d: Drain connection wiring 43s: Source connection wiring 49: pixels 49A: Monochrome pixels 49B: 3rd pixel 49BB: auxiliary pixel 49G: 2nd pixel 49R: 1st pixel 50e: opposite anode electrode 50f: Connection layer 52: Connect the conductive part 60: Cathode wiring 66: insulating film 70: Insulating film 80: Flattening film 80B: Insulator 90e: opposite cathode electrode 92: Hood 100: phosphor 100A: Monochrome phosphor 100B: auxiliary phosphor 100BA: The third monochromatic phosphor 100GA: The second monochromatic phosphor 100N: Poor inorganic luminous body 100RA: The first monochromatic phosphor 101B: Auxiliary inorganic light-emitting element assembly 102: Inorganic light-emitting element 102A: Monochromatic inorganic light-emitting element 102B: Auxiliary inorganic light-emitting element 102BA: The third monochromatic inorganic light-emitting element 102BB: The third auxiliary inorganic light-emitting element 102GA: The second monochromatic inorganic light-emitting element 102GB: 2nd auxiliary inorganic light-emitting element / 2nd inorganic light-emitting element 102N: Poor inorganic light-emitting element 102RA: The first monochromatic inorganic light-emitting element 102RB: The first auxiliary inorganic light-emitting element 103BB: Zone 3 103GB: Zone 2/Region 103RB: 1st area/area 104, 104B: n-type cladding 106, 106B: p-type cladding 108, 108B: luminescent layer 109: protective layer 112: anode electrode 114: Cathode electrode 160: signal processing circuit 162: The first processing circuit 164: Memory 166: Buffer 200: Form the substrate 202: Inspection substrate 202A: Conductive part 202B: Base 210: Driver IC AA: display area AR: Space BCT: Light-emitting control transistor BG: Luminous control scan line CH1: contact hole Cs1: hold capacitance/capacitance Cs2: Capacitance DB, DG, DR: diameter DRT: drive transistor Dx: 1st direction Dy: 2nd direction Dz: 3rd direction GA: Surrounding area IG: Initialize control scan line IST: initialize transistor L1: anode power cord L2: Video signal line L3: Reset signal line L4: Initialization signal line L10: Cathode power cord LI, LIa: Laser light PICA: pixel circuit Pix, Pixa, PixA, PixAa, PixB, PixBa: pixels PVDD: anode power supply potential PVSS: Cathode power supply potential RG: reset control scan line RST: reset transistor SG: write control scan line SiB, SiG, SiR: input grayscale value SoB, SoGb, SoR: output grayscale value SST: write transistor Tr, TrC: Transistor Vbg: luminous control signal Vig: Initialization control signal Vini: Initialization potential Vrg: reset control signal Vrst: reset power supply potential Vsg: write control signal Vsig: video signal

圖1係顯示第1實施形態之顯示裝置之構成例之平面圖。 圖2係顯示第1實施形態之複數個像素之平面圖。 圖3係對顯示裝置之像素電路之構成例予以顯示之電路圖。 圖4係對顯示裝置之像素電路之構成例予以顯示之電路圖。 圖5係圖1之V-V’剖視圖。 圖6係顯示本實施形態之單色無機發光體之構成例之剖視圖。 圖7係顯示本實施形態之輔助無機發光體之構成例之剖視圖。 圖8係顯示本實施形態之輔助無機發光體之構成例之俯視圖。 圖9係說明第1實施形態之顯示裝置之製造方法之示意圖。 圖10係示意性顯示信號處理電路之構成之方塊圖。 圖11係用於在第1實施形態中,說明輸出灰階值之設定方法之流程圖。 圖12係顯示第2實施形態之複數個像素之平面圖。 圖13係說明第2實施形態之顯示裝置之製造方法之示意圖。 圖14係用於在第2實施形態中,說明輸出灰階值之設定方法之流程圖。Fig. 1 is a plan view showing a configuration example of the display device of the first embodiment. Fig. 2 is a plan view showing a plurality of pixels in the first embodiment. FIG. 3 is a circuit diagram showing a configuration example of a pixel circuit of a display device. FIG. 4 is a circuit diagram showing a configuration example of a pixel circuit of a display device. Fig. 5 is a cross-sectional view taken along the line V-V' of Fig. 1; Fig. 6 is a cross-sectional view showing a configuration example of the monochromatic phosphor of this embodiment. Fig. 7 is a cross-sectional view showing a configuration example of the auxiliary phosphor of this embodiment. Fig. 8 is a plan view showing a configuration example of the auxiliary phosphor of this embodiment. FIG. 9 is a schematic diagram illustrating the manufacturing method of the display device of the first embodiment. FIG. 10 is a block diagram schematically showing the structure of the signal processing circuit. FIG. 11 is a flowchart for explaining the method of setting the output grayscale value in the first embodiment. Fig. 12 is a plan view showing a plurality of pixels in the second embodiment. FIG. 13 is a schematic diagram illustrating the manufacturing method of the display device of the second embodiment. Fig. 14 is a flowchart for explaining the method of setting the output grayscale value in the second embodiment.

1:顯示裝置 1: display device

49A:單色像素 49A: Monochrome pixels

49B:第3像素 49B: 3rd pixel

49BB:輔助像素 49BB: auxiliary pixel

49G:第2像素 49G: 2nd pixel

49R:第1像素 49R: 1st pixel

100:無機發光體 100: phosphor

100A:單色無機發光體 100A: Monochrome phosphor

100B:輔助無機發光體 100B: auxiliary phosphor

100BA:第3單色無機發光體 100BA: The third monochromatic phosphor

100GA:第2單色無機發光體 100GA: The second monochromatic phosphor

100RA:第1單色無機發光體 100RA: The first monochromatic phosphor

102:無機發光元件 102: Inorganic light-emitting element

102A:單色無機發光元件 102A: Monochromatic inorganic light-emitting element

102B:輔助無機發光元件 102B: Auxiliary inorganic light-emitting element

102BA:第3單色無機發光元件 102BA: The third monochromatic inorganic light-emitting element

102BB:第3輔助無機發光元件 102BB: The third auxiliary inorganic light-emitting element

102GA:第2單色無機發光元件 102GA: The second monochromatic inorganic light-emitting element

102GB:第2輔助無機發光元件/第2無機發光元件 102GB: 2nd auxiliary inorganic light-emitting element / 2nd inorganic light-emitting element

102RA:第1單色無機發光元件 102RA: The first monochromatic inorganic light-emitting element

102RB:第1輔助無機發光元件 102RB: The first auxiliary inorganic light-emitting element

Dx:第1方向 Dx: 1st direction

Dy:第2方向 Dy: 2nd direction

Dz:第3方向 Dz: 3rd direction

Pix,PixA,PixB:像素 Pix, PixA, PixB: pixels

Claims (10)

一種顯示裝置,其具備:矩陣狀排列之複數個無機發光體、及連接於複數個前述無機發光體之對向電極;且 複數個前述無機發光體包含: 單色無機發光體,其可發出特定波長頻帶之光;及 輔助無機發光體,其具備:在被供給電流之情形下可發出第1波長頻帶之光之第1輔助無機發光元件、在被供給電流之情形下可發出第2波長頻帶之光之第2輔助無機發光元件、及連接於第1輔助無機發光元件與第2輔助無機發光元件之電極;且 前述對向電極連接於前述單色無機發光體及前述第1輔助無機發光元件,未連接於前述第2輔助無機發光元件。A display device comprising: a plurality of phosphors arranged in a matrix, and a counter electrode connected to the plurality of phosphors; and The plurality of aforementioned phosphors include: Monochromatic phosphor, which can emit light in a specific wavelength band; and Auxiliary inorganic light-emitting body, which includes: a first auxiliary inorganic light emitting element that can emit light in the first wavelength band when current is supplied, and a second auxiliary element that can emit light in the second wavelength band when current is supplied An inorganic light-emitting element, and an electrode connected to the first auxiliary inorganic light-emitting element and the second auxiliary inorganic light-emitting element; and The counter electrode is connected to the monochromatic phosphor and the first auxiliary inorganic light-emitting element, and is not connected to the second auxiliary inorganic light-emitting element. 如請求項1之顯示裝置,其中前述第1波長頻帶與包含於相同像素之前述單色無機發光體發出之光之波長頻帶不同。The display device of claim 1, wherein the first wavelength band is different from the wavelength band of light emitted by the monochromatic phosphor included in the same pixel. 如請求項1之顯示裝置,其中前述第1波長頻帶與包含於相同像素之前述單色無機發光體發出之光之波長頻帶重疊。The display device of claim 1, wherein the first wavelength band overlaps with the wavelength band of light emitted by the monochromatic phosphor included in the same pixel. 如請求項1之顯示裝置,其中前述第2波長頻帶與包含於相同像素之前述單色無機發光體發出之光之波長頻帶重疊。The display device of claim 1, wherein the second wavelength band overlaps with the wavelength band of light emitted by the monochromatic phosphor included in the same pixel. 如請求項1之顯示裝置,其中前述第1輔助無機發光元件及前述第2輔助無機發光元件為柱狀,自軸向觀察之情形之前述第1輔助無機發光元件之寬度與前述第2輔助無機發光元件之寬度不同。The display device of claim 1, wherein the first auxiliary inorganic light-emitting element and the second auxiliary inorganic light-emitting element are columnar, and the width of the first auxiliary inorganic light-emitting element is the same as the width of the second auxiliary inorganic light-emitting element when viewed from the axial direction. The width of the light-emitting element is different. 如請求項1之顯示裝置,其中於自前述無機發光體與前述對向電極排列之方向觀察之情形下,設置1個前述輔助無機發光體之區域較設置1個前述單色無機發光體之區域更廣。The display device of claim 1, wherein when viewed from the direction in which the phosphor and the counter electrode are arranged, the area where one auxiliary phosphor is provided is compared to the area where one single-color phosphor is provided Wider. 如請求項1之顯示裝置,其中於自前述無機發光體與前述對向電極排列之方向觀察之情形下,設置前述第1輔助無機發光元件之區域之面積,與設置前述第2輔助無機發光元件之區域之面積不同。The display device of claim 1, wherein, when viewed from the direction in which the phosphor and the counter electrode are arranged, the area of the region where the first auxiliary phosphor is provided and the second auxiliary phosphor is provided The area of the area is different. 如請求項1之顯示裝置,其中前述輔助無機發光體更具備第3輔助無機發光元件,該第3輔助無機發光元件在被供給電流之情形下可發出第3波長頻帶之光;且 前述對向電極未連接於前述第3輔助無機發光元件。The display device of claim 1, wherein the auxiliary phosphor further includes a third auxiliary phosphor, which can emit light in the third wavelength band when current is supplied; and The counter electrode is not connected to the third auxiliary inorganic light emitting element. 如請求項8之顯示裝置,其中前述無機發光體包含:可發出前述第2波長頻帶之光之前述單色無機發光體、及可發出前述第3波長頻帶之光之前述單色無機發光體。The display device of claim 8, wherein the inorganic light-emitting body includes: the monochromatic inorganic light-emitting body that can emit light in the second wavelength band, and the monochromatic inorganic light-emitting body that can emit light in the third wavelength band. 一種顯示裝置之製造方法,其包含: 單色無機發光體形成步驟,其形成可發出特定波長頻帶之光之單色無機發光體; 輔助無機發光體形成步驟,其形成輔助無機發光體,該輔助無機發光體具備:在被供給電流之情形下可發出第1波長頻帶之光之第1輔助無機發光元件、在被供給電流之情形下可發出第2波長頻帶之光之第2輔助無機發光元件、及連接於前述第1輔助無機發光元件與前述第2輔助無機發光元件之電極;及 對向電極形成步驟,其形成對向電極,該對向電極連接於前述單色無機發光體及前述第1輔助無機發光元件,未連接於前述第2輔助無機發光元件。A method for manufacturing a display device, which includes: A step of forming a monochromatic phosphor, which forms a monochromatic phosphor that can emit light in a specific wavelength band; An auxiliary phosphor forming step, which forms an auxiliary phosphor, the auxiliary phosphor having: a first auxiliary phosphor that can emit light in the first wavelength band when current is supplied, and when current is supplied A second auxiliary inorganic light emitting element capable of emitting light in the second wavelength band, and an electrode connected to the first auxiliary inorganic light emitting element and the second auxiliary inorganic light emitting element; and The counter electrode forming step is to form a counter electrode connected to the monochromatic phosphor and the first auxiliary phosphor, but not to the second auxiliary phosphor.
TW109126824A 2019-09-12 2020-08-07 Display device and method of manufacturing the same TWI757822B (en)

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