TW202125735A - Use of indium-bismuth alloy for heat dissipation reducing the porosity and improving the heat dissipation effect - Google Patents

Use of indium-bismuth alloy for heat dissipation reducing the porosity and improving the heat dissipation effect Download PDF

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TW202125735A
TW202125735A TW108147679A TW108147679A TW202125735A TW 202125735 A TW202125735 A TW 202125735A TW 108147679 A TW108147679 A TW 108147679A TW 108147679 A TW108147679 A TW 108147679A TW 202125735 A TW202125735 A TW 202125735A
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indium
bismuth alloy
heat dissipation
heat
heat source
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TWI709207B (en
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王振興
楊詠荏
沈博凱
黃柏諺
胡峰豪
楊富安
蕭伊廷
洪嘉駿
王介勇
吳俊毅
陳志
黃晢文
陳信在
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遠東科技大學
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Abstract

A use of indium-bismuth alloy for heat dissipation is disclosed, including: an indium-bismuth alloy fixed between a heat source and an adjacent heat sink; the indium-bismuth alloy is heated and melted into a liquid phase; and the liquid indium-bismuth alloy flows to fill a gap between the heat source and the heat sink, so that the liquid indium-bismuth alloy forms a liquid-phase heat conduction channel. By densification of the indium-bismuth alloy before contacting the heat source, the porosity can be reduced and the heat dissipation effect can be effectively improved.

Description

銦鉍合金於散熱的用途The use of indium-bismuth alloy for heat dissipation

本發明係關於一種金屬在散熱方面的用途,特別是指一種銦鉍合金在散熱方面的用途。The present invention relates to the use of a metal in heat dissipation, in particular to the use of an indium-bismuth alloy in heat dissipation.

電子產品中的發熱性元件,在使用的過程中會不斷地產生熱能,累積的熱能可能導致發熱性元件的效能下降。一般發熱性元件會搭配散熱元件進行散熱,散熱元件常見有金屬板及散熱鰭片,並逐漸因應電子產品的輕薄要求,而發展出薄型散熱片。然而,薄型散熱件受限於加工程序,平整度遠不如塊材,薄型散熱件及發熱性元件的介面之間容易有大量空隙,且這些空隙中有熱傳導係數僅為0.024 W/mK的空氣,容易形成熱淤積,造成嚴重的熱阻。The heat-generating components in electronic products will continuously generate heat energy during use, and the accumulated heat energy may cause the performance of the heat-generating components to decrease. Generally, heat-generating components are matched with heat-dissipating components to dissipate heat. Heat-dissipating components usually include metal plates and heat-dissipating fins. In response to the light and thin requirements of electronic products, thin heat sinks are gradually developed. However, thin heat sinks are limited by processing procedures and are far less flat than bulk materials. There are a lot of gaps between the interfaces of thin heat sinks and heat-generating components, and there is air with a thermal conductivity of only 0.024 W/mK in these gaps. It is easy to form thermal siltation and cause severe thermal resistance.

為了填補薄型散熱件及發熱性元件之間的那些空隙,業界廣泛使用熱傳導係數約2~5 W/mK的散熱膏,然而,請搭配第七圖,在將散熱膏(1')塗抹在發熱性元件(2')上時,散熱膏(1')中容易產生大量氣泡(A'),這些氣泡(A')中的空氣會大幅降低發熱性元件(2')的散熱效果。In order to fill the gaps between thin heat sinks and heat generating components, the industry widely uses thermal paste with a thermal conductivity of about 2~5 W/mK. However, please match the seventh figure and apply the thermal paste (1') to the When the heat-generating element (2') is mounted, a large number of bubbles (A') are easily generated in the heat-dissipating paste (1'), and the air in these bubbles (A') will greatly reduce the heat dissipation effect of the heat-generating element (2').

爰此,本發明人為使散熱效果更好,而提出一種銦鉍合金於散熱的用途,包含:在一熱源及相鄰之一散熱端之間固定一銦鉍合金;該銦鉍合金受熱熔化為液相;以及液相之該銦鉍合金流動填充該熱源及該散熱端之間的一間隙,使液相之該銦鉍合金形成一液相導熱通道。In view of this, in order to make the heat dissipation effect better, the inventor proposed an indium-bismuth alloy for heat dissipation, including: fixing an indium-bismuth alloy between a heat source and an adjacent heat-dissipating end; the indium-bismuth alloy is heated and melted into Liquid phase; and the indium-bismuth alloy in the liquid phase flows to fill a gap between the heat source and the heat dissipation end, so that the indium-bismuth alloy in the liquid phase forms a liquid-phase heat conduction channel.

進一步,該散熱端為一散熱固定件,該散熱固定件將該銦鉍合金固定於該熱源。Further, the heat dissipation end is a heat dissipation fixing member, and the heat dissipation fixing member fixes the indium-bismuth alloy to the heat source.

其中,該熱源停止發熱後,液相之該銦鉍合金降溫而固化為該熱源及該散熱端之間的一固態夾層,液相之該銦鉍合金降溫後,該固態夾層仍附著於該熱源及該散熱端,且該固態夾層的基地相為BiIn2 相或BiIn相。Wherein, after the heat source stops heating, the indium-bismuth alloy in the liquid phase is cooled down and solidified into a solid interlayer between the heat source and the heat sink, and after the indium-bismuth alloy in the liquid phase is cooled down, the solid interlayer is still attached to the heat source And the heat dissipation end, and the base phase of the solid interlayer is BiIn 2 phase or BiIn phase.

其中,該固態夾層的固液相變體積膨脹量介於0.01 cm3 /cm3 至0.025 cm3 /cm3Wherein, the solid-liquid phase change volume expansion of the solid interlayer is between 0.01 cm 3 /cm 3 and 0.025 cm 3 /cm 3 .

其中,該銦鉍合金的厚度介於0.02至0.1毫米,該銦鉍合金的熔點介於攝氏60度至80度。The thickness of the indium-bismuth alloy ranges from 0.02 to 0.1 mm, and the melting point of the indium-bismuth alloy ranges from 60°C to 80°C.

進一步,去除從該間隙流出的一溢料。Further, a flash of material flowing out from the gap is removed.

進一步,該間隙邊緣設置一防溢件,防止該溢料溢出。Furthermore, an anti-overflow member is arranged on the edge of the gap to prevent the overflow of the material.

其中,該銦鉍合金的尺寸不大於該熱源及該散熱端。Wherein, the size of the indium-bismuth alloy is not larger than the heat source and the heat dissipation end.

進一步,該銦鉍合金固定在該熱源及該散熱端之前,除去該銦鉍合金上的油脂。Further, before the indium-bismuth alloy is fixed on the heat source and the heat dissipation end, the grease on the indium-bismuth alloy is removed.

進一步,該銦鉍合金含有小於40 wt%的錫。Further, the indium-bismuth alloy contains less than 40 wt% tin.

根據上述技術特徵可達成以下功效:According to the above technical features, the following effects can be achieved:

1.銦鉍合金先緻密化後再接觸熱源,減少孔隙率,有效提高散熱效果。1. The indium-bismuth alloy is densified before contacting the heat source to reduce the porosity and effectively improve the heat dissipation effect.

2.散熱固定件固定銦鉍合金,當銦鉍合金相變化為液態時,也不會從熱源上溢出。2. The heat dissipation fixture fixes the indium-bismuth alloy, and when the phase of the indium-bismuth alloy changes to a liquid state, it will not overflow from the heat source.

3.散熱固定件是高熱傳導係數的材質,熱能可以從熱源通過銦鉍合金傳導至散熱固定件散熱。3. The heat dissipation fixture is a material with high thermal conductivity, and the heat energy can be conducted from the heat source through the indium-bismuth alloy to the heat dissipation fixture to dissipate heat.

4.銦鉍合金的厚度薄至0.02毫米,不會影響熱源及散熱固定件的安裝。4. The thickness of the indium-bismuth alloy is as thin as 0.02 mm, which will not affect the installation of the heat source and heat dissipation fixture.

5.液相之銦鉍合金黏度只有習用散熱膏的萬分之一,更容易完整填充間隙,且氣泡更容易排出,進而增加熱傳效果。5. The viscosity of the indium-bismuth alloy in the liquid phase is only one ten thousandth of the conventional heat dissipation paste, which makes it easier to completely fill the gap, and the bubbles are easier to discharge, thereby increasing the heat transfer effect.

6.液相之銦鉍合金降溫後,固態夾層仍會附著於熱源及散熱端,確保不會有空氣進入熱源及散熱端之間,也無需擔心下次銦鉍合金形成液相導熱通道後會有氣泡。6. After the liquid phase indium-bismuth alloy cools down, the solid interlayer will still be attached to the heat source and the heat sink to ensure that no air enters between the heat source and the heat sink, and there is no need to worry about the next time the indium-bismuth alloy forms a liquid-phase heat conduction channel. There are bubbles.

7.固態夾層的固液相變體積膨脹量適中,利於使固態夾層維持附著在熱源及散熱端。7. The volume expansion of the solid-liquid phase change of the solid interlayer is moderate, which is beneficial to keep the solid interlayer attached to the heat source and heat dissipation end.

8.固態夾層冷卻後仍會附著於熱源及散熱端,且固態夾層的基地相為BiIn2 相或BiIn相,即使是在固態,銦鉍合金仍具有理論值超過28 W/m℃的熱傳導係數,是習用散熱膏的5倍以上。8. The solid interlayer will still adhere to the heat source and heat sink after cooling, and the base phase of the solid interlayer is BiIn 2 phase or BiIn phase. Even in the solid state, the indium-bismuth alloy still has a thermal conductivity coefficient of more than 28 W/m℃. , Is more than 5 times of conventional thermal paste.

綜合上述技術特徵,本發明銦鉍合金於散熱的用途的主要功效將可於下述實施例清楚呈現。Based on the above technical features, the main effects of the indium-bismuth alloy of the present invention for heat dissipation will be clearly presented in the following embodiments.

請先參閱第一圖至第三圖,係揭示本發明實施例銦鉍合金於散熱的用途,包含:Please refer to Figures 1 to 3, which illustrate the use of indium-bismuth alloys for heat dissipation according to embodiments of the present invention, including:

於一熱源(1)及相鄰之一散熱端之間放置緻密化後的固態之一銦鉍合金(2),且該銦鉍合金(2)固定在該熱源(1)及該散熱端間之前,先除去該銦鉍合金(2)上的油脂。該散熱端在本發明之實施方式中為一散熱固定件(3),並以該散熱固定件(3)將該銦鉍合金(2)固定接觸該熱源(1),該銦鉍合金(2)的面積不大於該熱源(1)及該散熱固定件(3)的面積。A densified solid indium-bismuth alloy (2) is placed between a heat source (1) and an adjacent heat dissipating end, and the indium-bismuth alloy (2) is fixed between the heat source (1) and the heat dissipating end Before, the grease on the indium-bismuth alloy (2) was removed. In the embodiment of the present invention, the heat dissipation end is a heat dissipation fixture (3), and the indium bismuth alloy (2) is fixedly contacted with the heat source (1) by the heat dissipation fixture (3), and the indium bismuth alloy (2) The area of) is not greater than the area of the heat source (1) and the heat dissipation fixing member (3).

該熱源(1)可以是中央處理器、圖形處理器或LED元件等在運行時會發熱的元件。該散熱固定件(3)為高熱傳導係數的材質,例如該散熱固定件(3)可以是散熱風扇,該散熱固定件(3)的熱傳導係數不低於該銦鉍合金(2)。The heat source (1) can be a central processing unit, a graphics processor, or an LED component that generates heat during operation. The heat dissipation fixture (3) is made of a material with high thermal conductivity. For example, the heat dissipation fixture (3) can be a heat dissipation fan, and the heat conduction coefficient of the heat dissipation fixture (3) is not lower than that of the indium-bismuth alloy (2).

請參閱第四圖,並請搭配第二圖,該銦鉍合金(2)的緻密化方式是:將67 wt%的銦及33 wt%的鉍混合加熱而共晶成為熱傳導係數約54 W/mK的該銦鉍合金(2),該銦鉍合金(2)上下分別以一蓋板(A)及一載板(B)夾住,使該銦鉍合金(2)除了被該蓋板(A)覆蓋的一覆蓋區,尚留有未被該蓋板(A)完全覆蓋的一未覆蓋區。該蓋板(A)上方再置放有一重物(C),該載板(B)下方則貼平有一平面熱源(D)。使用該平面熱源(D)對該銦鉍合金(2)加熱,該銦鉍合金(2)受熱熔融,該覆蓋區中液相之該銦鉍合金(2)受到該重物(C)、該蓋板(A)及該載板(B)的壓力擠壓,會往該未覆蓋區流動,同時液相之該銦鉍合金(2)中大部分的氣泡也會一併被帶至該未覆蓋區排出,由於液相之該銦鉍合金(2)的黏度僅有2~100 cp,氣泡更容易被帶至該未覆蓋區排出,可以使液相之該銦鉍合金(2)的孔隙率低於15%,意即,每單位體積之液相之該銦鉍合金(2)中,不會有超過15%體積的一孔隙(E)。藉由這種方式,還可以減少液相之該銦鉍合金(2)抵擋薄化的表面張力,使固化後的該銦鉍合金(2)的厚度介於0.02至0.1毫米,薄化至0.02毫米的該銦鉍合金(2)不會影響該熱源(1)及該散熱固定件(3)的安裝。Please refer to the fourth figure, and please match the second figure. The densification method of the indium-bismuth alloy (2) is: heating the mixture of 67 wt% indium and 33 wt% bismuth to form a eutectic with a thermal conductivity of about 54 W/ mK of the indium-bismuth alloy (2), the indium-bismuth alloy (2) is clamped up and down by a cover plate (A) and a carrier plate (B), so that the indium-bismuth alloy (2) is not covered by the cover plate ( A) A covered area covered by the cover plate (A) still has an uncovered area not completely covered by the cover plate (A). A weight (C) is placed above the cover plate (A), and a flat heat source (D) is placed under the carrier plate (B). Use the plane heat source (D) to heat the indium-bismuth alloy (2), the indium-bismuth alloy (2) is heated and melted, and the indium-bismuth alloy (2) in the liquid phase in the coverage area is subjected to the weight (C), the The pressure of the cover plate (A) and the carrier plate (B) will flow to the uncovered area, and at the same time most of the bubbles in the indium-bismuth alloy (2) in the liquid phase will be brought to the uncovered area. The covered area is discharged. Since the viscosity of the indium-bismuth alloy (2) in the liquid phase is only 2-100 cp, the bubbles are more easily brought to the uncovered area and discharged, which can make the indium-bismuth alloy (2) in the liquid phase pores The rate is less than 15%, which means that there is no pore (E) exceeding 15% by volume in the indium-bismuth alloy (2) per unit volume of liquid phase. In this way, the surface tension of the indium-bismuth alloy (2) in the liquid phase against thinning can also be reduced, so that the thickness of the solidified indium-bismuth alloy (2) is between 0.02 and 0.1 mm, which is thinned to 0.02 The millimeter of the indium-bismuth alloy (2) will not affect the installation of the heat source (1) and the heat dissipation fixing member (3).

請參閱第三圖、第五圖及第六圖,當該熱源(1)以攝氏20度至150度之一發熱溫度發熱時,由於該銦鉍合金(2)的熔點介於攝氏60度至80度,一旦該發熱溫度高於該銦鉍合金(2)的熔點時,該銦鉍合金(2)相變化為液態。當該銦鉍合金(2)要相變化時,該銦鉍合金(2)會自該熱源(1)吸收熱能做為潛熱而熔化為液相,使該熱源(1)降溫。同時變為液相之該銦鉍合金(2)流動填充該散熱固定件(3)及該熱源(1)之間的一間隙(30),例如該散熱固定件(3)為散熱風扇,液相之該銦鉍合金(2)主要可以填滿散熱風扇之鰭片與該熱源(1)之間的該間隙(30),甚至填入鰭片與鰭片之間的該間隙(30),增加液相之該銦鉍合金(2)與該散熱固定件(3)的接觸面積,使該間隙(30)形成一液相導熱通道(20),液相之該銦鉍合金(2)可以繼續自該熱源(1)吸收熱能,藉由該液相導熱通道(20)將熱能傳導至該散熱固定件(3)而散熱,進一步增加散熱效率,使該熱源(1)更快速的降溫。液相之該銦鉍合金(2)的黏度僅有2~100 cp,低黏度更容易完整填充該間隙(30),即使該散熱固定件(3)接觸該銦鉍合金(2)時不慎帶入空氣,而空氣被液相之該銦鉍合金(2)包覆為氣泡後,氣泡也容易在液相之該銦鉍合金(2)中移動而被排出至該間隙(30)外,進而增進熱傳效果。由於該銦鉍合金(2)之面積小於該熱源(1),且該銦鉍合金(2)熱傳導係數高達54 W/mK,可以迅速將熱能傳遞至該散熱固定件(3)而降溫凝固,又有該散熱固定件(3)固定,液相之該銦鉍合金(2)不會從該熱源(1)上溢出。液相之該銦鉍合金(2)藉由緻密化減少孔隙率,雖然仍可能有15%以下的該孔隙(E)存在於液相之該銦鉍合金(2)中,但少量的該孔隙(E)不會影響液相之該銦鉍合金(2)的熱能傳導,熱能可以如第六圖中的箭頭方向所示,順著該孔隙(E)的邊緣以及該液相導熱通道(20)傳導至該散熱固定件(3)散熱,如此一來,液相之該銦鉍合金(2)可以有效提高該熱源(1)的散熱效果。Please refer to the third, fifth and sixth diagrams. When the heat source (1) generates heat at a heating temperature of 20°C to 150°C, the melting point of the indium-bismuth alloy (2) is between 60°C and 60°C. At 80 degrees, once the heating temperature is higher than the melting point of the indium-bismuth alloy (2), the indium-bismuth alloy (2) phase changes into a liquid state. When the indium-bismuth alloy (2) undergoes a phase change, the indium-bismuth alloy (2) absorbs heat energy from the heat source (1) as latent heat and melts into a liquid phase, thereby cooling the heat source (1). At the same time, the indium-bismuth alloy (2) that becomes the liquid phase flows to fill a gap (30) between the heat dissipation fixture (3) and the heat source (1). For example, the heat dissipation fixture (3) is a heat dissipation fan, and the liquid In contrast, the indium-bismuth alloy (2) can mainly fill the gap (30) between the fin of the cooling fan and the heat source (1), and even fill the gap (30) between the fin and the fin, Increase the contact area between the indium-bismuth alloy (2) and the heat dissipation fixture (3) in the liquid phase, so that the gap (30) forms a liquid-phase heat conduction channel (20), and the indium-bismuth alloy (2) in the liquid phase can Continue to absorb heat energy from the heat source (1), conduct heat energy to the heat dissipation fixing member (3) through the liquid phase heat conduction channel (20) to dissipate heat, further increase the heat dissipation efficiency, and make the heat source (1) cool down more quickly. The viscosity of the indium-bismuth alloy (2) in the liquid phase is only 2~100 cp, and the low viscosity makes it easier to fill the gap (30) completely, even if the heat dissipation fixture (3) touches the indium-bismuth alloy (2) accidentally Air is brought in, and after the air is covered by the indium-bismuth alloy (2) in the liquid phase into bubbles, the bubbles will easily move in the indium-bismuth alloy (2) in the liquid phase and be discharged out of the gap (30). Further enhance the heat transfer effect. Since the area of the indium-bismuth alloy (2) is smaller than that of the heat source (1), and the thermal conductivity of the indium-bismuth alloy (2) is as high as 54 W/mK, heat energy can be quickly transferred to the heat dissipation fixture (3) for cooling and solidification, In addition, the heat dissipation fixing member (3) is fixed so that the indium-bismuth alloy (2) in the liquid phase will not overflow from the heat source (1). The indium-bismuth alloy (2) in the liquid phase reduces the porosity by densification, although there may still be less than 15% of the pores (E) in the indium-bismuth alloy (2) in the liquid phase, but a small amount of the pores (E) It will not affect the heat conduction of the indium-bismuth alloy (2) in the liquid phase. The heat energy can follow the edge of the pore (E) and the liquid-phase heat conduction channel (20) as shown in the direction of the arrow in the sixth figure. ) Is conducted to the heat dissipation fixing member (3) to dissipate heat. In this way, the indium-bismuth alloy (2) in the liquid phase can effectively improve the heat dissipation effect of the heat source (1).

當液相之該銦鉍合金(2)量較多時,可能會有一溢料從該間隙(30)流出,除了可以直接將該溢料除去,也可以在該間隙(30)邊緣設置一防溢件,例如塗覆矽膠或圍圈套件等等,防止該溢料再流出,惟此情景未於圖式中繪出。When the amount of the indium-bismuth alloy (2) in the liquid phase is large, there may be a flash out of the gap (30). In addition to directly removing the flash, it is also possible to install a guard on the edge of the gap (30). Overflow parts, such as coated silicone or enclosure kits, etc., prevent the overflow from flowing out, but this scenario is not shown in the diagram.

請參閱第六圖及第七圖,該熱源(1)停止發熱,或該發熱溫度降至該銦鉍合金(2)之熔點以下後,液相之該銦鉍合金(2)即固化為該熱源(1)及該散熱固定件(3)之間的一固態夾層,該固態夾層具有0.0181 cm3 /cm3 的固液相變體積膨脹量,且該固態夾層仍附著於該熱源(1)及該散熱固定件(3)。該固態夾層的固液相變體積膨脹量介於0.01 cm3 /cm3 至0.025 cm3 /cm3 之間,液相之該銦鉍合金(2)降溫後,藉由適中的固液相變體積膨脹量,該固態夾層可以維持附著在該熱源(1)及該散熱固定件(3)上。該固態夾層並於下次該熱源(1)之該發熱溫度升至該銦鉍合金(2)之熔點以上後,再次進行相變化而自該熱源(1)吸熱使該熱源(1)降溫,並形成該液相導熱通道(20)。藉由該銦鉍合金(2)的相變化,該銦鉍合金(2)可以重複使用在散熱的用途上。由於該固態夾層維持附著在該熱源(1)及該散熱固定件(3)上,可以確保維持該固態夾層的附著強度,若是該固態夾層未維持附著在該熱源(1)及該散熱固定件(3)上,而與該熱源(1)及該散熱固定件(3)分離,會使導熱率僅有0.024 W/mK的空氣導入至該間隙(30)中,下次該熱源(1)發熱時,這些空氣將隔絕該固態夾層的熱能傳遞,即使該固態夾層重新熔融為液相之該銦鉍合金(2)而形成該液相導熱通道(20),這些空氣仍然可能會形成大量的該孔隙(E),阻擋該液相導熱通道(20)的熱能傳遞,並使該固態夾層更不容易附著在該熱源(1)及該散熱固定件(3)上,進而導入更多空氣,如此惡性循環,將導致該熱源(1)因無法良好散熱而過熱毀損。除此之外,且該固態夾層的基地相為BiIn2 相或BiIn相,即使是在固態,該銦鉍合金(2)仍具有理論值超過28 W/m℃的熱傳導係數,是習用散熱膏(1')的5倍以上。Please refer to Figures 6 and 7. After the heat source (1) stops heating or the heating temperature drops below the melting point of the indium-bismuth alloy (2), the indium-bismuth alloy (2) in the liquid phase is solidified into the A solid interlayer between the heat source (1) and the heat dissipation fixture (3), the solid interlayer has a volumetric expansion of 0.0181 cm 3 /cm 3 between the solid and liquid phases, and the solid interlayer is still attached to the heat source (1) And the heat dissipation fixing member (3). The volume expansion of the solid-liquid phase transition of the solid interlayer is between 0.01 cm 3 /cm 3 and 0.025 cm 3 /cm 3 . By volume expansion, the solid interlayer can be maintained attached to the heat source (1) and the heat dissipation fixing member (3). After the solid interlayer next time the heating temperature of the heat source (1) rises above the melting point of the indium-bismuth alloy (2), the phase change is performed again to absorb heat from the heat source (1) to cool the heat source (1), And the liquid phase heat conduction channel (20) is formed. Through the phase change of the indium-bismuth alloy (2), the indium-bismuth alloy (2) can be repeatedly used for heat dissipation purposes. Since the solid interlayer remains attached to the heat source (1) and the heat dissipation fixture (3), the adhesion strength of the solid interlayer can be ensured to be maintained. If the solid interlayer is not maintained attached to the heat source (1) and the heat dissipation fixture (3) (3), and the separation from the heat source (1) and the heat dissipation fixture (3) will cause air with a thermal conductivity of only 0.024 W/mK to be introduced into the gap (30). Next time the heat source (1) When heating, the air will isolate the thermal energy transfer of the solid interlayer. Even if the solid interlayer is re-melted into the liquid phase of the indium-bismuth alloy (2) to form the liquid phase heat conduction channel (20), the air may still form a large amount of The aperture (E) blocks the heat transfer of the liquid phase heat conduction channel (20), and makes the solid interlayer less likely to be attached to the heat source (1) and the heat dissipation fixture (3), thereby introducing more air, Such a vicious circle will cause the heat source (1) to be overheated and damaged due to inability to dissipate heat well. In addition, the base phase of the solid interlayer is BiIn 2 phase or BiIn phase. Even in the solid state, the indium-bismuth alloy (2) still has a theoretical thermal conductivity of more than 28 W/m℃, which is a conventional heat sink paste. (1') more than 5 times.

該銦鉍合金(2)可以進一步含有小於40 wt%的錫,例如:以51 wt%的銦、32.5 wt%的鉍及16.5 wt%的錫共晶形成該銦鉍合金(2),或是以25 wt%的銦、57 wt%的鉍及18 wt%的錫共晶形成該銦鉍合金(2),同樣都可以應用在散熱上。當該銦鉍合金(2)是以51 wt%的銦、32.5 wt%的鉍及16.5 wt%的錫共晶形成時,該固態夾層的固液相變體積膨脹量為0.0201 cm3 /cm3 ;當該銦鉍合金(2)是以25 wt%的銦、57 wt%的鉍及18 wt%的錫共晶形成時,該固態夾層的固液相變體積膨脹量為0.0131 cm3 /cm3The indium-bismuth alloy (2) may further contain less than 40 wt% tin, for example: 51 wt% of indium, 32.5 wt% of bismuth and 16.5 wt% of tin are used to form the indium-bismuth alloy (2), or The indium-bismuth alloy (2) is formed by 25 wt% indium, 57 wt% bismuth, and 18 wt% tin eutectic, which can also be used for heat dissipation. When the indium-bismuth alloy (2) is formed by a eutectic of 51 wt% indium, 32.5 wt% bismuth, and 16.5 wt% tin, the solid-liquid phase change volume expansion of the solid-state interlayer is 0.0201 cm 3 /cm 3 ; When the indium-bismuth alloy (2) is formed by 25 wt% indium, 57 wt% bismuth and 18 wt% tin eutectic, the solid-liquid phase change volume expansion of the solid interlayer is 0.0131 cm 3 /cm 3 .

請參閱第八圖至第十圖,並請搭配第一圖,第八圖至第十圖係不同成分比例下之該銦鉍合金(2)由掃描式顯微鏡觀察的微結構組織照片。第八圖是以51 wt%的銦、32.5 wt%的鉍及16.5 wt%的錫共晶形成的該銦鉍合金(2),熔點在60℃,此時該銦鉍合金(2)的原子百分比為銦:鉍:錫=60.1:21.1:18.8,而將第八圖以能量色散X射線譜(Energy-dispersive X-ray spectroscopy, EDS)分析後,白灰色基地相的成分百分比為銦:鉍:錫=62.2:23.5:14.46,符合三相圖的BiIn2 相。第九圖是以67 wt%的銦及33 wt%的鉍共晶形成的該銦鉍合金(2),熔點在70℃,而將第九圖以EDS分析後,白灰色基地相的成分百分比為銦:鉍=68.57:31.43,符合相圖的BiIn2 相。第十圖是以25 wt%的銦、57 wt%的鉍及18 wt%的錫共晶形成的該銦鉍合金(2),熔點在80℃,而將第十圖以EDS分析後,白灰色基地相的成分百分比為銦:鉍:錫=46.76:50.84:2.4,符合三相圖的BiIn相,由以上分析可以得知,該固態夾層的基地相確實為BiIn2 相或BiIn相。Please refer to the eighth to tenth figures, and please match the first figure. The eighth to tenth figures are the microstructure photos of the indium-bismuth alloy (2) under different composition ratios observed by a scanning microscope. The eighth figure is the indium-bismuth alloy (2) formed by the eutectic of 51 wt% indium, 32.5 wt% bismuth and 16.5 wt% tin. The melting point is 60℃. At this time, the atoms of the indium-bismuth alloy (2) The percentage is indium:bismuth:tin=60.1:21.1:18.8, and after the eighth image is analyzed by Energy-dispersive X-ray spectroscopy (EDS), the percentage of the white-gray base phase is indium:bismuth : Tin = 62.2: 23.5: 14.46, BiIn 2 phase in line with the three-phase diagram. The ninth figure is the indium-bismuth alloy (2) formed by the eutectic of 67 wt% indium and 33 wt% bismuth. The melting point is 70℃. After the ninth figure is analyzed by EDS, the percentage of the white-gray base phase is It is indium:bismuth=68.57:31.43, which conforms to the BiIn 2 phase of the phase diagram. The tenth figure is the indium-bismuth alloy (2) formed by the eutectic of 25 wt% indium, 57 wt% bismuth and 18 wt% tin. The melting point is 80℃. The composition percentage of the gray base phase is indium:bismuth:tin=46.76:50.84:2.4, and the BiIn phase conforms to the three-phase diagram. From the above analysis, it can be known that the base phase of the solid interlayer is indeed BiIn 2 phase or BiIn phase.

綜合上述實施例之說明,當可充分瞭解本發明之操作、使用及本發明產生之功效,惟以上所述實施例僅係為本發明之較佳實施例,當不能以此限定本發明實施之範圍,即依本發明申請專利範圍及發明說明內容所作簡單的等效變化與修飾,皆屬本發明涵蓋之範圍內。Based on the description of the above embodiments, when one can fully understand the operation and use of the present invention and the effects of the present invention, but the above embodiments are only the preferred embodiments of the present invention, and the implementation of the present invention cannot be limited by this. The scope, that is, simple equivalent changes and modifications made according to the scope of the patent application of the present invention and the content of the description of the invention, are all within the scope of the present invention.

本發明 (1):熱源 (2):銦鉍合金 (20):液相導熱通道 (3):散熱固定件 (30):間隙 (A):蓋板 (B):載板 (C):重物 (D):平面熱源 (E):孔隙this invention (1): Heat source (2): Indium-bismuth alloy (20): Liquid phase heat conduction channel (3): Heat dissipation fixture (30): Gap (A): Cover (B): Carrier board (C): Heavy objects (D): Plane heat source (E): Porosity

先前技術 (1'):散熱膏 (2'):發熱性元件 (A'):氣泡Prior art (1'): Thermal paste (2'): Heating element (A'): Bubble

[第一圖]係本發明實施例之立體分解圖。[The first figure] is a three-dimensional exploded view of an embodiment of the present invention.

[第二圖]係本發明實施例之側視圖。[Second Figure] is a side view of an embodiment of the present invention.

[第三圖]係本發明實施例之流程圖。[Third Figure] is a flowchart of an embodiment of the present invention.

[第四圖]係本發明實施例之實施示意圖一,示意銦鉍合金的緻密化過程。[Fourth figure] is the first schematic diagram of the embodiment of the present invention, showing the densification process of the indium-bismuth alloy.

[第五圖]係本發明實施例之實施示意圖二,示意銦鉍合金相變化為液態。[Fifth Figure] is the second schematic diagram of the embodiment of the present invention, showing that the indium-bismuth alloy phase changes into a liquid state.

[第六圖]係本發明實施例第五圖之部分放大圖,示意銦鉍合金的熱傳導。[The sixth figure] is a partially enlarged view of the fifth figure of the embodiment of the present invention, showing the heat conduction of the indium-bismuth alloy.

[第七圖]係習知技術使用散熱膏之實施示意圖。[Figure 7] is a schematic diagram of the implementation of the conventional technology using thermal paste.

[第八圖]係本發明實施例之微結構組織照片一。[The eighth figure] is a photo 1 of the microstructure organization of the embodiment of the present invention.

[第九圖]係本發明實施例之微結構組織照片二。[Figure 9] is the second photo of the microstructure organization of the embodiment of the present invention.

[第十圖]係本發明實施例之微結構組織照片三。[Figure 10] is the third photo of the microstructure organization of the embodiment of the present invention.

(1):熱源(1): Heat source

(2):銦鉍合金(2): Indium-bismuth alloy

(3):散熱固定件(3): Heat dissipation fixture

Claims (10)

一種銦鉍合金於散熱的用途,包含: 在一熱源及相鄰之一散熱端之間固定一銦鉍合金; 該銦鉍合金受熱熔化為液相;以及 液相之該銦鉍合金流動填充該熱源及該散熱端之間的一間隙,使液相之該銦鉍合金形成一液相導熱通道。A use of indium-bismuth alloy for heat dissipation, including: Fixing an indium-bismuth alloy between a heat source and an adjacent heat sink; The indium-bismuth alloy is heated and melted into a liquid phase; and The indium-bismuth alloy in the liquid phase flows to fill a gap between the heat source and the heat dissipation end, so that the indium-bismuth alloy in the liquid phase forms a liquid-phase heat conduction channel. 如申請專利範圍第1項所述之銦鉍合金於散熱的用途,進一步,該散熱端為一散熱固定件,該散熱固定件將該銦鉍合金固定於該熱源。The indium-bismuth alloy described in item 1 of the scope of patent application is used for heat dissipation. Further, the heat dissipation end is a heat dissipation fixing member, and the heat dissipation fixing member fixes the indium-bismuth alloy to the heat source. 如申請專利範圍第1項所述之銦鉍合金於散熱的用途,其中,該熱源停止發熱後,液相之該銦鉍合金降溫而固化為該熱源及該散熱端之間的一固態夾層,液相之該銦鉍合金降溫後,該固態夾層仍附著於該熱源及該散熱端,且該固態夾層的基地相為BiIn2 相或BiIn相。The indium-bismuth alloy described in item 1 of the scope of patent application is used for heat dissipation, wherein after the heat source stops heating, the indium-bismuth alloy in the liquid phase is cooled and solidified into a solid interlayer between the heat source and the heat sink, After the indium-bismuth alloy in the liquid phase is cooled, the solid interlayer is still attached to the heat source and the heat sink, and the base phase of the solid interlayer is BiIn 2 phase or BiIn phase. 如申請專利範圍第3項所述之銦鉍合金於散熱的用途,其中,該固態夾層的固液相變體積膨脹量介於0.01 cm3 /cm3 至0.025 cm3 /cm3The indium-bismuth alloy described in item 3 of the scope of patent application is used for heat dissipation, wherein the solid-liquid phase change volume expansion of the solid interlayer is between 0.01 cm 3 /cm 3 and 0.025 cm 3 /cm 3 . 如申請專利範圍第1項所述之銦鉍合金於散熱的用途,其中,該銦鉍合金的厚度介於0.02至0.1毫米,該銦鉍合金的熔點介於攝氏60度至80度。The indium-bismuth alloy described in item 1 of the scope of the patent application is used for heat dissipation, wherein the thickness of the indium-bismuth alloy is between 0.02 and 0.1 mm, and the melting point of the indium-bismuth alloy is between 60°C and 80°C. 如申請專利範圍第1項所述之銦鉍合金於散熱的用途,進一步,去除從該間隙流出的一溢料。The indium-bismuth alloy described in item 1 of the scope of the patent application is used for heat dissipation, and further, a flash flowing out of the gap is removed. 如申請專利範圍第6項所述之銦鉍合金於散熱的用途,進一步,該間隙邊緣設置一防溢件,防止該溢料溢出。For example, the indium-bismuth alloy described in item 6 of the scope of patent application is used for heat dissipation. Furthermore, an anti-overflow member is provided on the edge of the gap to prevent the overflow of the material. 如申請專利範圍第1項所述之銦鉍合金於散熱的用途,其中,該銦鉍合金的尺寸不大於該熱源及該散熱端。The indium-bismuth alloy described in item 1 of the scope of the patent application is used for heat dissipation, wherein the size of the indium-bismuth alloy is not larger than the heat source and the heat sink. 如申請專利範圍第1項所述之銦鉍合金於散熱的用途,進一步,該銦鉍合金固定在該熱源及該散熱端之前,除去該銦鉍合金上的油脂。The indium-bismuth alloy described in item 1 of the scope of patent application is used for heat dissipation. Furthermore, before the indium-bismuth alloy is fixed on the heat source and the heat sink, the grease on the indium-bismuth alloy is removed. 如申請專利範圍第1項所述之銦鉍合金於散熱的用途,進一步,該銦鉍合金含有小於40 wt%的錫。The indium-bismuth alloy described in item 1 of the scope of the patent application is used for heat dissipation. Furthermore, the indium-bismuth alloy contains less than 40 wt% tin.
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