TW202111397A - Pixel array substrate - Google Patents

Pixel array substrate Download PDF

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TW202111397A
TW202111397A TW108132844A TW108132844A TW202111397A TW 202111397 A TW202111397 A TW 202111397A TW 108132844 A TW108132844 A TW 108132844A TW 108132844 A TW108132844 A TW 108132844A TW 202111397 A TW202111397 A TW 202111397A
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opening
signal line
insulating layer
pixel
layer
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TW108132844A
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TWI699581B (en
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吳炘儒
陳韋潔
楊智鈞
李冠誼
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友達光電股份有限公司
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Priority to TW108132844A priority Critical patent/TWI699581B/en
Priority to CN202010150797.9A priority patent/CN111490055B/en
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Publication of TW202111397A publication Critical patent/TW202111397A/en

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    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
    • H01L27/12Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body
    • H01L27/1214Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
    • GPHYSICS
    • G02OPTICS
    • G02FOPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333Constructional arrangements; Manufacturing methods
    • G02F1/133345Insulating layers
    • GPHYSICS
    • G02OPTICS
    • G02FOPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333Constructional arrangements; Manufacturing methods
    • G02F1/1335Structural association of cells with optical devices, e.g. polarisers or reflectors
    • G02F1/133509Filters, e.g. light shielding masks
    • G02F1/133514Colour filters
    • GPHYSICS
    • G02OPTICS
    • G02FOPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333Constructional arrangements; Manufacturing methods
    • G02F1/1339Gaskets; Spacers; Sealing of cells
    • G02F1/13394Gaskets; Spacers; Sealing of cells spacers regularly patterned on the cell subtrate, e.g. walls, pillars
    • GPHYSICS
    • G02OPTICS
    • G02FOPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362Active matrix addressed cells
    • GPHYSICS
    • G02OPTICS
    • G02FOPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362Active matrix addressed cells
    • G02F1/136209Light shielding layers, e.g. black matrix, incorporated in the active matrix substrate, e.g. structurally associated with the switching element
    • GPHYSICS
    • G02OPTICS
    • G02FOPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362Active matrix addressed cells
    • G02F1/136286Wiring, e.g. gate line, drain line
    • GPHYSICS
    • G02OPTICS
    • G02FOPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362Active matrix addressed cells
    • G02F1/136222Colour filters incorporated in the active matrix substrate

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  • Physics & Mathematics (AREA)
  • Nonlinear Science (AREA)
  • General Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Chemical & Material Sciences (AREA)
  • Mathematical Physics (AREA)
  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Computer Hardware Design (AREA)
  • Liquid Crystal (AREA)
  • Devices For Indicating Variable Information By Combining Individual Elements (AREA)

Abstract

A pixel array substrate including a substrate, a first signal line, a first pixel, an insulation layer, an organic layer and a light shielding pattern is provided. The first pixel includes a first active device and a first pixel electrode electrically connected to each other. The first active device is electrically connected to the first signal line. The insulation layer has a first opening overlapped with the first signal line. The first signal line has a first surface defining the first opening. The organic layer has a second opening communicated with the first opening, a bottom surface defining the first opening and a sidewall defining the second opening. The light shielding pattern covers the first surface, the sidewall and the bottom surface and has a first portion located in the first opening and a second portion located in the second opening. The second portion protrudes from the organic layer. The first portion and the second portion respectively have a first width and a second width, and the first width is larger than the second width.

Description

畫素陣列基板Pixel array substrate

本發明是有關於一種顯示面板,且特別是有關於一種畫素陣列基板。The present invention relates to a display panel, and particularly relates to a pixel array substrate.

隨著科技產業的蓬勃發展,舉凡行動電話(mobile phone)、平板電腦(tablet computer)或電子書(eBook)等顯示裝置已被廣泛應用於日常生活中。尤其近年來,隨著立體顯示(stereoscopic display)及虛擬實境(virtual reality)等多媒體應用的出現,為了提供令人驚豔的視覺效果,具超高解析度的顯示面板需求逐漸增加。With the rapid development of the technology industry, display devices such as mobile phones, tablet computers, or eBooks have been widely used in daily life. Especially in recent years, with the emergence of multimedia applications such as stereoscopic display and virtual reality, in order to provide stunning visual effects, the demand for display panels with ultra-high resolution has gradually increased.

然而,隨著顯示面板解析度不斷地提升,驅動電路的可佈局空間勢必不足,進而導致畫素的開口率下降。因此,如何在提升顯示面板解析度與畫素開口率的同時,維持既有的成本優勢是相關廠商所致力於克服的難題之一。However, as the resolution of the display panel continues to increase, the layout space of the driving circuit is inevitably insufficient, which in turn causes the pixel aperture ratio to decrease. Therefore, how to improve the display panel resolution and pixel aperture ratio while maintaining the existing cost advantage is one of the problems that relevant manufacturers are committed to overcome.

本發明提供一種畫素陣列基板,具有較高的畫素開口率。The present invention provides a pixel array substrate with higher pixel aperture ratio.

本發明的畫素陣列基板,包括基板、第一訊號線、第一畫素、絕緣層、有機層以及遮光圖案。第一訊號線與第一畫素設置於基板上。第一畫素包括彼此電性連接的第一主動元件以及第一畫素電極。第一主動元件電性連接第一訊號線。絕緣層覆蓋基板,且具有重疊於第一訊號線的第一開口。第一訊號線具有定義第一開口的第一上表面。有機層設置於絕緣層上,且具有連通於第一開口的第二開口。有機層具有定義第一開口的底面以及定義第二開口的側壁,且底面連接於側壁。遮光圖案覆蓋第一訊號線的第一上表面以及有機層的側壁與底面,且具有位於第一開口的第一部分以及位於第二開口並凸伸出有機層的第二部分。第一部分與第二部分分別具有第一寬度與第二寬度,且第一寬度大於第二寬度。The pixel array substrate of the present invention includes a substrate, a first signal line, a first pixel, an insulating layer, an organic layer, and a light-shielding pattern. The first signal line and the first pixel are arranged on the substrate. The first pixel includes a first active element and a first pixel electrode that are electrically connected to each other. The first active element is electrically connected to the first signal line. The insulating layer covers the substrate and has a first opening overlapping the first signal line. The first signal line has a first upper surface defining a first opening. The organic layer is disposed on the insulating layer and has a second opening connected to the first opening. The organic layer has a bottom surface defining the first opening and a side wall defining the second opening, and the bottom surface is connected to the side wall. The light-shielding pattern covers the first upper surface of the first signal line and the sidewall and bottom surface of the organic layer, and has a first portion located in the first opening and a second portion located in the second opening and protruding from the organic layer. The first part and the second part have a first width and a second width, respectively, and the first width is greater than the second width.

在本發明的一實施例中,上述的畫素陣列基板的遮光圖案的第一部分與第二部分的材質相同。In an embodiment of the present invention, the material of the first part and the second part of the light shielding pattern of the aforementioned pixel array substrate is the same.

在本發明的一實施例中,上述的畫素陣列基板更包括設置於基板上的間隙物。遮光圖案的第一頂面與基板的上表面之間具有第一高度。間隙物與基板的上表面之間具有第二高度,且第一高度小於第二高度。In an embodiment of the present invention, the aforementioned pixel array substrate further includes spacers disposed on the substrate. There is a first height between the first top surface of the light shielding pattern and the upper surface of the substrate. There is a second height between the spacer and the upper surface of the substrate, and the first height is smaller than the second height.

在本發明的一實施例中,上述的畫素陣列基板的遮光圖案與間隙物屬於同一膜層。In an embodiment of the present invention, the light-shielding pattern and the spacer of the above-mentioned pixel array substrate belong to the same film layer.

在本發明的一實施例中,上述的畫素陣列基板的有機層為彩色濾光層與有機絕緣層的疊層結構。有機絕緣層覆蓋彩色濾光層,且設有定義第二開口的側壁。In an embodiment of the present invention, the organic layer of the aforementioned pixel array substrate is a stacked structure of a color filter layer and an organic insulating layer. The organic insulating layer covers the color filter layer and is provided with sidewalls defining the second opening.

在本發明的一實施例中,上述的畫素陣列基板的絕緣層為第一子絕緣層與第二子絕緣層的疊層結構。第一子絕緣層位於基板與第一訊號線之間。第二子絕緣層位於第一訊號線與有機層之間,且第一開口貫穿第二子絕緣層。In an embodiment of the present invention, the above-mentioned insulating layer of the pixel array substrate is a laminated structure of the first sub-insulating layer and the second sub-insulating layer. The first sub-insulating layer is located between the substrate and the first signal line. The second sub-insulating layer is located between the first signal line and the organic layer, and the first opening penetrates the second sub-insulating layer.

在本發明的一實施例中,上述的畫素陣列基板的第一開口更貫穿第一子絕緣層。第一訊號線還具有定義第一開口的第一下表面以及連接第一上表面與第一下表面的第一側面,且遮光圖案更覆蓋第一訊號線的第一下表面與第一側面。In an embodiment of the present invention, the first opening of the aforementioned pixel array substrate further penetrates the first sub-insulating layer. The first signal line further has a first lower surface defining the first opening and a first side surface connecting the first upper surface and the first lower surface, and the shading pattern further covers the first lower surface and the first side surface of the first signal line.

在本發明的一實施例中,上述的畫素陣列基板更包括第二訊號線與第二畫素。第二訊號線與該第一訊號線相鄰且平行排列於基板上。第二訊號線具有定義第一開口的第二上表面,且遮光圖案更覆蓋第二訊號線的第二上表面。第二畫素包括彼此電性連接的第二主動元件與第二畫素電極。第二主動元件電性連接第二訊號線。第一訊號線與第二訊號線位於第一畫素與第二畫素之間,且遮光圖案位於第一訊號線與第二訊號線之間。In an embodiment of the present invention, the aforementioned pixel array substrate further includes a second signal line and a second pixel. The second signal line is adjacent to the first signal line and is arranged in parallel on the substrate. The second signal line has a second upper surface defining the first opening, and the shading pattern further covers the second upper surface of the second signal line. The second pixel includes a second active element and a second pixel electrode that are electrically connected to each other. The second active element is electrically connected to the second signal line. The first signal line and the second signal line are located between the first pixel and the second pixel, and the shading pattern is located between the first signal line and the second signal line.

在本發明的一實施例中,上述的畫素陣列基板的絕緣層為第一子絕緣層與第二子絕緣層的疊層結構。第一子絕緣層位於基板與第一訊號線之間。第二子絕緣層位於第一訊號線與有機層之間,且第一開口貫穿第二子絕緣層。In an embodiment of the present invention, the above-mentioned insulating layer of the pixel array substrate is a laminated structure of the first sub-insulating layer and the second sub-insulating layer. The first sub-insulating layer is located between the substrate and the first signal line. The second sub-insulating layer is located between the first signal line and the organic layer, and the first opening penetrates the second sub-insulating layer.

在本發明的一實施例中,上述的畫素陣列基板的第一開口更貫穿第一子絕緣層。第一訊號線還具有定義第一開口的第一下表面以及連接第一上表面與第一下表面的第一側面。第二訊號線還具有定義第一開口的第二下表面以及連接第二上表面與第二下表面的第二側面,且遮光圖案更覆蓋第一訊號線的第一下表面與第一側面以及第二訊號線的第二下表面與第二側面。In an embodiment of the present invention, the first opening of the aforementioned pixel array substrate further penetrates the first sub-insulating layer. The first signal line also has a first lower surface defining the first opening and a first side surface connecting the first upper surface and the first lower surface. The second signal line further has a second lower surface defining the first opening and a second side surface connecting the second upper surface and the second lower surface, and the shading pattern further covers the first lower surface and the first side surface of the first signal line and The second lower surface and the second side surface of the second signal line.

在本發明的一實施例中,上述的畫素陣列基板的有機層為彩色濾光層。In an embodiment of the present invention, the organic layer of the aforementioned pixel array substrate is a color filter layer.

基於上述,在本發明一實施例的畫素陣列基板中,絕緣層與有機層分別具有相連通的第一開口與第二開口,且電性連接於畫素之主動元件的第一訊號線與這兩開口相重疊。透過遮光圖案位於第二開口的第二部分的寬度小於遮光圖案位於第一開口的第一部分的寬度,可增加畫素之畫素電極的可佈局空間,有助於提升畫素的開口率(Aperture Ratio,AR)。Based on the above, in the pixel array substrate of an embodiment of the present invention, the insulating layer and the organic layer respectively have a first opening and a second opening that communicate with each other, and are electrically connected to the first signal line and the first signal line of the active element of the pixel. The two openings overlap. The width of the second portion of the light-shielding pattern located in the second opening is smaller than the width of the first portion of the light-shielding pattern located in the first opening, which can increase the layout space of the pixel electrode of the pixel and help increase the aperture ratio of the pixel. Ratio, AR).

為讓本發明的上述特徵和優點能更明顯易懂,下文特舉實施例,並配合所附圖式作詳細說明如下。In order to make the above-mentioned features and advantages of the present invention more comprehensible, the following specific embodiments are described in detail in conjunction with the accompanying drawings.

本文使用的「約」、「近似」、「本質上」、或「實質上」包括所述值和在本領域普通技術人員確定的特定值的可接受的偏差範圍內的平均值,考慮到所討論的測量和與測量相關的誤差的特定數量(即,測量系統的限制)。例如,「約」可以表示在所述值的一個或多個標準偏差內,或例如±30%、±20%、±15%、±10%、±5%內。再者,本文使用的「約」、「近似」、「本質上」、或「實質上」可依量測性質、切割性質或其它性質,來選擇較可接受的偏差範圍或標準偏差,而可不用一個標準偏差適用全部性質。As used herein, "approximately", "approximately", "essentially", or "substantially" includes the stated value and the average value within the acceptable deviation range of the specific value determined by a person of ordinary skill in the art, taking into account all The measurement in question and the specific number of errors associated with the measurement (ie, the limitations of the measurement system). For example, "about" can mean within one or more standard deviations of the stated value, or, for example, within ±30%, ±20%, ±15%, ±10%, ±5%. Furthermore, "about", "approximately", "essentially", or "substantially" used in this article can be based on measurement properties, cutting properties, or other properties to select a more acceptable deviation range or standard deviation. Not one standard deviation applies to all properties.

在附圖中,為了清楚起見,放大了層、膜、面板、區域等的厚度。應當理解,當諸如層、膜、區域或基板的元件被稱為在另一元件「上」或「連接到」另一元件時,其可以直接在另一元件上或與另一元件連接,或者中間元件可以也存在。相反,當元件被稱為「直接在另一元件上」或「直接連接到」另一元件時,不存在中間元件。如本文所使用的,「連接」可以指物理及/或電性連接。再者,「電性連接」可為二元件間存在其它元件。In the drawings, the thickness of layers, films, panels, regions, etc., are exaggerated for clarity. It should be understood that when an element such as a layer, film, region, or substrate is referred to as being "on" or "connected to" another element, it can be directly on or connected to the other element, or Intermediate elements can also be present. In contrast, when an element is referred to as being "directly on" or "directly connected to" another element, there are no intervening elements. As used herein, "connection" can refer to physical and/or electrical connection. Furthermore, "electrical connection" can mean that there are other components between the two components.

此外,諸如「下」或「底部」和「上」或「頂部」的相對術語可在本文中用於描述一個元件與另一元件的關係,如圖所示。應當理解,相對術語旨在包括除了圖中所示的方位之外的裝置的不同方位。例如,如果一個附圖中的裝置翻轉,則被描述為在其它元件的「下」側的元件將被定向在其它元件的「上」側。因此,示例性術語「下」可以包括「下」和「上」的取向,取決於附圖的特定取向。類似地,如果一個附圖中的裝置翻轉,則被描述為在其它元件「下方」或「下方」的元件將被定向為在其它元件「上方」。因此,示例性術語「上面」或「下面」可以包括上方和下方的取向。In addition, relative terms such as "lower" or "bottom" and "upper" or "top" can be used herein to describe the relationship between one element and another element, as shown in the figure. It should be understood that relative terms are intended to include different orientations of the device in addition to the orientation shown in the figures. For example, if the device in one figure is turned over, elements described as being on the "lower" side of other elements will be oriented on the "upper" side of the other elements. Therefore, the exemplary term "lower" may include an orientation of "lower" and "upper," depending on the specific orientation of the drawing. Similarly, if the device in one figure is turned over, elements described as "below" or "below" other elements will be oriented "above" the other elements. Thus, the exemplary terms "above" or "below" can include an orientation of above and below.

現將詳細地參考本發明的示範性實施方式,示範性實施方式的實例說明於所附圖式中。只要有可能,相同元件符號在圖式和描述中用來表示相同或相似部分。Reference will now be made in detail to the exemplary embodiments of the present invention, and examples of the exemplary embodiments are illustrated in the accompanying drawings. Whenever possible, the same component symbols are used in the drawings and descriptions to indicate the same or similar parts.

圖1是本發明的第一實施例的畫素陣列基板的俯視圖。圖2A至圖2E是圖1的畫素陣列基板的製造流程的剖視圖。圖2E對應於圖1的剖線A-A’。圖2F是採用圖2E的畫素陣列基板的顯示面板的剖視圖。為清楚呈現起見,圖1省略了圖2E的絕緣層110、有機絕緣層122、遮光圖案130與間隙物135的繪示。特別一提的是,圖2E的畫素陣列基板10可應用於顯示面板1(如圖2F所示)。FIG. 1 is a top view of a pixel array substrate according to a first embodiment of the present invention. 2A to 2E are cross-sectional views of the manufacturing process of the pixel array substrate of FIG. 1. Fig. 2E corresponds to the section line A-A' of Fig. 1. FIG. 2F is a cross-sectional view of a display panel using the pixel array substrate of FIG. 2E. For clarity of presentation, FIG. 1 omits the illustration of the insulating layer 110, the organic insulating layer 122, the light shielding pattern 130, and the spacer 135 in FIG. 2E. In particular, the pixel array substrate 10 of FIG. 2E can be applied to the display panel 1 (as shown in FIG. 2F).

請參照圖1及圖2E,畫素陣列基板10包括基板101、多條訊號線以及多個畫素PX。在本實施例中,多條訊號線包括多條掃描線SL與多條資料線DL。多條掃描線SL相交於多條資料線DL並定義出多個畫素區。多個畫素PX分別設置於這些畫素區中,且各自電性連接於對應的一條掃描線SL與對應的一條資料線DL。舉例而言,多條資料線DL沿方向X排列於基板101上,且在方向Y上延伸,其中方向X實質上可垂直於方向Y。多條掃描線SL沿方向Y排列於基板101上,且在方向X上延伸。在本實施例中,任兩相鄰的資料線DL之間可設有一個畫素PX,且此畫素PX可電性連接於這兩相鄰的資料線DL的其中一者,但本發明不以此為限。1 and 2E, the pixel array substrate 10 includes a substrate 101, a plurality of signal lines, and a plurality of pixels PX. In this embodiment, the multiple signal lines include multiple scan lines SL and multiple data lines DL. A plurality of scan lines SL intersect with a plurality of data lines DL and define a plurality of pixel areas. A plurality of pixels PX are respectively arranged in these pixel regions, and each is electrically connected to a corresponding scan line SL and a corresponding data line DL. For example, a plurality of data lines DL are arranged on the substrate 101 along the direction X and extend in the direction Y, wherein the direction X can be substantially perpendicular to the direction Y. A plurality of scan lines SL are arranged on the substrate 101 along the direction Y and extend in the direction X. In this embodiment, a pixel PX can be provided between any two adjacent data lines DL, and this pixel PX can be electrically connected to one of the two adjacent data lines DL, but the present invention Not limited to this.

在本實施例中,畫素陣列基板10還可選擇性地包括多條共用線CL。舉例來說,這些共用線CL可沿方向Y排列於基板101上,且在方向X上延伸。亦即,共用線CL可選擇性地平行於掃描線SL。基於導電性的考量,資料線DL、掃描線SL與共用線CL的材料一般是使用金屬材料。然而,本發明不限於此,根據其他的實施例,資料線DL、掃描線SL與共用線CL也可使用其他導電材料,例如:合金、金屬材料的氮化物、金屬材料的氧化物、金屬材料的氮氧化物、或其他合適的材料、或是金屬材料與其他導電材料的堆疊層。需說明的是,本發明並不以圖式揭示內容而加以限制資料線DL、掃描線SL與共用線CL的數量,在一些實施例中,資料線DL、掃描線SL與共用線CL的數量可根據實際的畫素PX數量(即顯示面板的解析度)需求而調整。In this embodiment, the pixel array substrate 10 may also optionally include a plurality of common lines CL. For example, these common lines CL may be arranged on the substrate 101 along the direction Y and extend in the direction X. That is, the common line CL can be selectively parallel to the scan line SL. Based on the consideration of conductivity, the data line DL, the scan line SL, and the common line CL are generally made of metal materials. However, the present invention is not limited to this. According to other embodiments, the data line DL, the scan line SL, and the common line CL may also use other conductive materials, such as alloys, nitrides of metal materials, oxides of metal materials, and metal materials. Oxynitride, or other suitable materials, or stacked layers of metal materials and other conductive materials. It should be noted that the present invention does not limit the number of data lines DL, scan lines SL, and common lines CL without showing the content in figures. In some embodiments, the numbers of data lines DL, scan lines SL, and common lines CL It can be adjusted according to the actual number of pixels PX (ie the resolution of the display panel).

進一步而言,畫素PX包括絕緣層110、主動元件T以及畫素電極PE。絕緣層110包括第一子絕緣層111與第二子絕緣層112,其中第一子絕緣層111覆蓋掃描線SL,第二子絕緣層112覆蓋第一子絕緣層111的部分表面、資料線DL以及主動元件T。在本實施例中,第一子絕緣層111與第二子絕緣層112可為一層或兩層以上的無機絕緣層,無機絕緣層的材質包括氧化矽(SiO2 )、氮化矽(SiNx)、氮氧化矽(SiOxNy;x>y)、氧氮化矽(SiNxOy;x>y)、或其他適合的無機絕緣材料。Furthermore, the pixel PX includes an insulating layer 110, an active device T, and a pixel electrode PE. The insulating layer 110 includes a first sub-insulating layer 111 and a second sub-insulating layer 112. The first sub-insulating layer 111 covers the scan line SL, and the second sub-insulating layer 112 covers part of the surface of the first sub-insulating layer 111 and the data line DL. And the active component T. In this embodiment, the first sub-insulating layer 111 and the second sub-insulating layer 112 can be one or more than two inorganic insulating layers. The material of the inorganic insulating layer includes silicon oxide (SiO 2 ) and silicon nitride (SiNx). , Silicon oxynitride (SiOxNy; x>y), silicon oxynitride (SiNxOy; x>y), or other suitable inorganic insulating materials.

舉例而言,形成主動元件T的方法可包括以下步驟:於基板101上依序形成閘極G、第一子絕緣層111、半導體圖案SC、歐姆接觸層OC、源極S與汲極D,其中源極S與汲極D係透過歐姆接觸層OC(例如兩個歐姆接觸圖案)分別電性連接於半導體圖案SC的不同兩區。主動元件T的源極S與汲極D分別電性連接於資料線DL與畫素電極PE。在本實施例中,主動元件T的閘極G可選擇性地配置在半導體圖案SC的下方,即閘極G位於半導體圖案SC與基板101之間,以形成底部閘極型薄膜電晶體(bottom-gate TFT),但本發明不以此為限。根據其他的實施例,主動元件的閘極G也可配置在半導體圖案SC的上方,以形成頂部閘極型薄膜電晶體(top-gate TFT)。For example, the method of forming the active device T may include the following steps: sequentially forming a gate electrode G, a first sub-insulating layer 111, a semiconductor pattern SC, an ohmic contact layer OC, a source electrode S and a drain electrode D on the substrate 101, The source S and the drain D are respectively electrically connected to two different regions of the semiconductor pattern SC through the ohmic contact layer OC (for example, two ohmic contact patterns). The source S and the drain D of the active device T are electrically connected to the data line DL and the pixel electrode PE, respectively. In this embodiment, the gate G of the active device T can be selectively arranged under the semiconductor pattern SC, that is, the gate G is located between the semiconductor pattern SC and the substrate 101 to form a bottom gate type thin film transistor (bottom gate). -gate TFT), but the present invention is not limited to this. According to other embodiments, the gate G of the active device can also be arranged above the semiconductor pattern SC to form a top-gate TFT.

另一方面,半導體圖案SC的材質例如是非晶矽半導體(amorphous silicon semiconductor)材料,也就是說,主動元件T可以是非晶矽薄膜電晶體(Amorphous Silicon TFT,a-Si TFT)。然而,本發明不限於此,在其他實施例中,主動元件也可以是低溫多晶矽薄膜電晶體(LTPS TFT)、微晶矽薄膜電晶體(micro-Si TFT)或金屬氧化物電晶體(Metal Oxide Transistor)。在本實施例中,歐姆接觸層OC的材料可包括含有摻雜物(dopant)之金屬氧化物半導體材料、含有摻雜物之多晶矽、含有摻雜物之非晶矽或是其他合適的含有摻雜物之半導體材料、或其它合適的材料、或上述之組合。On the other hand, the material of the semiconductor pattern SC is, for example, an amorphous silicon semiconductor material, that is, the active device T may be an amorphous silicon TFT (a-Si TFT). However, the present invention is not limited to this. In other embodiments, the active device may also be a low-temperature polysilicon thin film transistor (LTPS TFT), a micro-Si TFT or a metal oxide transistor (Metal Oxide). Transistor). In this embodiment, the material of the ohmic contact layer OC may include metal oxide semiconductor materials containing dopants, polysilicon containing dopants, amorphous silicon containing dopants, or other suitable dopant-containing materials. Impurity semiconductor materials, or other suitable materials, or a combination of the above.

在本實施例中,主動元件T的源極S與汲極D以及資料線DL的材質可選擇性地相同,主動元件T的閘極G與掃描線SL的材質可選擇性地相同。也就是說,主動元件T的源極S與汲極D以及資料線DL可形成於同一膜層,主動元件T的閘極G與掃描線SL可形成於同一膜層。畫素電極PE可選擇性地為穿透式電極,穿透式電極的材質包括金屬氧化物,例如:銦錫氧化物、銦鋅氧化物、鋁錫氧化物、鋁鋅氧化物、或其它合適的氧化物、或者是上述至少兩者之堆疊層。然而,本發明並不限於此,在其他實施例中,畫素電極PE也可以是反射式電極,反射式電極的材質包括金屬、合金、金屬材料的氮化物、金屬材料的氧化物、金屬材料的氮氧化物、或其他合適的材料、或是金屬材料與其他導電材料的堆疊層。In this embodiment, the materials of the source S and the drain D of the active device T and the data line DL can be selectively the same, and the materials of the gate G of the active device T and the scan line SL can be selectively the same. That is, the source S and the drain D of the active device T and the data line DL can be formed on the same film layer, and the gate G and the scan line SL of the active device T can be formed on the same film layer. The pixel electrode PE can optionally be a penetrating electrode. The material of the penetrating electrode includes metal oxides, such as indium tin oxide, indium zinc oxide, aluminum tin oxide, aluminum zinc oxide, or other suitable materials. , Or a stacked layer of at least two of the above. However, the present invention is not limited to this. In other embodiments, the pixel electrode PE may also be a reflective electrode. The material of the reflective electrode includes metals, alloys, nitrides of metallic materials, oxides of metallic materials, and metallic materials. Oxynitride, or other suitable materials, or stacked layers of metal materials and other conductive materials.

畫素陣列基板10更包括有機層120與遮光圖案130。有機層120設置於絕緣層110上,且遮光圖案130在基板101的法線方向上重疊於資料線DL。也就是說,遮光圖案130可位於沿方向X排列且相鄰的兩畫素PX之間。在本實施例中,遮光圖案130可選擇性地貫穿有機層120與絕緣層110以覆蓋資料線DL與基板101的部分上表面101s。據此,可增加遮光圖案130在基板101的法線方向上的光學密度(optical density,OD),有助於降低資料線DL對於外在環境光(ambient light)的反射,進而提升顯示面板的暗態表現。另一方面,畫素PX的畫素電極PE可設置於有機層120上,並貫穿有機層120與第二子絕緣層112以電性連接主動元件T的汲極D。舉例來說,有機絕緣層122與第二子絕緣層112可設有接觸窗115,而畫素電極PE延伸至彩色濾光層121的開孔121b內並透過接觸窗115與主動元件T的汲極D電性連接。The pixel array substrate 10 further includes an organic layer 120 and a light shielding pattern 130. The organic layer 120 is disposed on the insulating layer 110, and the light shielding pattern 130 overlaps the data line DL in the normal direction of the substrate 101. In other words, the light shielding pattern 130 may be located between two adjacent pixels PX arranged along the direction X. In this embodiment, the light shielding pattern 130 can selectively penetrate the organic layer 120 and the insulating layer 110 to cover the data line DL and a portion of the upper surface 101 s of the substrate 101. Accordingly, the optical density (OD) of the light shielding pattern 130 in the normal direction of the substrate 101 can be increased, which helps to reduce the reflection of the data line DL to ambient light, thereby improving the display panel’s performance Dark state performance. On the other hand, the pixel electrode PE of the pixel PX may be disposed on the organic layer 120 and penetrate the organic layer 120 and the second sub-insulating layer 112 to electrically connect to the drain D of the active device T. For example, the organic insulating layer 122 and the second sub-insulating layer 112 may be provided with a contact window 115, and the pixel electrode PE extends into the opening 121b of the color filter layer 121 and penetrates the contact window 115 and the drain of the active device T极 D electrical connection.

進一步而言,絕緣層110與有機層120分別具有重疊於資料線DL的第一開口110a與第二開口120a。遮光圖案130設置於第一開口110a與第二開口120a內,並覆蓋資料線DL的上表面DLa、下表面DLb以及側面DLc,其中上表面DLa相對於下表面DLb,且側面DLc連接於上表面DLa與下表面DLb之間。從另一觀點而言,遮光圖案130具有位於第一開口110a的第一部分131以及位於第二開口120a並凸伸出有機層120的第二部分132。遮光圖案130的第一部分131與第二部分132在垂直於基板101的法線方向上分別具有第一寬度W1與第二寬度W2,且第一部分131的第一寬度W1大於第二部分132的第二寬度W2。Furthermore, the insulating layer 110 and the organic layer 120 respectively have a first opening 110a and a second opening 120a overlapping the data line DL. The light shielding pattern 130 is disposed in the first opening 110a and the second opening 120a, and covers the upper surface DLa, the lower surface DLb, and the side surface DLc of the data line DL, wherein the upper surface DLa is opposite to the lower surface DLb, and the side surface DLc is connected to the upper surface Between DLa and the lower surface DLb. From another point of view, the light shielding pattern 130 has a first portion 131 located in the first opening 110 a and a second portion 132 located in the second opening 120 a and protruding from the organic layer 120. The first portion 131 and the second portion 132 of the light shielding pattern 130 respectively have a first width W1 and a second width W2 in the direction perpendicular to the normal line of the substrate 101, and the first width W1 of the first portion 131 is greater than the first width W1 of the second portion 132. Two width W2.

值得一提的是,藉由第一部分131與資料線DL的配置關係(例如:在垂直於基板101的法線方向上,第一部分131的寬度大於資料線DL的寬度),可確保遮光圖案130的遮光效果(例如:在基板101的法線方向上,位於畫素電極PE與資料線DL之重疊區域的多個液晶分子因第二部分132位於有機層120表面上的構形影響而產生的排列不良所造成的漏光)。也因此,可有效縮減遮光圖案130的第二部分132的第二寬度W2,有助於增加畫素電極PE的可佈局空間,進而提升畫素PX的開口率(Aperture Ratio,AR)。It is worth mentioning that the configuration relationship between the first portion 131 and the data line DL (for example, the width of the first portion 131 is greater than the width of the data line DL in the direction perpendicular to the normal line of the substrate 101) can ensure the light shielding pattern 130 The light-shielding effect (for example: in the normal direction of the substrate 101, a plurality of liquid crystal molecules located in the overlapping area of the pixel electrode PE and the data line DL are generated due to the influence of the configuration of the second part 132 on the surface of the organic layer 120 Light leakage caused by poor alignment). Therefore, the second width W2 of the second portion 132 of the light-shielding pattern 130 can be effectively reduced, which helps increase the layout space of the pixel electrode PE, thereby increasing the aperture ratio (AR) of the pixel PX.

以下將針對遮光圖案130的製造流程進行示範性地說明。首先,請參照圖2A及圖2B,在形成有機絕緣材料層122M後,進行一蝕刻步驟,移除有機絕緣材料層122M重疊於資料線DL的一部分以形成畫素陣列基板10的有機絕緣層122,且有機絕緣層122設有第二開口120a。在本實施例中,有機層120可以是彩色濾光層121與有機絕緣層122的堆疊結構。然而,本發明不限於此,根據其他實施例,有機層也可以僅是彩色濾光層121(亦即,有機層可不包含有機絕緣層122)。The manufacturing process of the light shielding pattern 130 will be exemplarily described below. First, referring to FIGS. 2A and 2B, after the organic insulating material layer 122M is formed, an etching step is performed to remove a portion of the organic insulating material layer 122M that overlaps the data line DL to form the organic insulating layer 122 of the pixel array substrate 10 , And the organic insulating layer 122 is provided with a second opening 120a. In this embodiment, the organic layer 120 may be a stack structure of the color filter layer 121 and the organic insulating layer 122. However, the present invention is not limited to this. According to other embodiments, the organic layer may only be the color filter layer 121 (that is, the organic layer may not include the organic insulating layer 122).

在本實施例中,有機絕緣層122的材料可為高分子聚合物(polymer)、或其它合適的材料,其中高分子聚合物包括壓克力樹脂(acrylic resin)、感光樹脂(photosensitive resin)、聚醯亞胺(polyimide)、或以上述材料為主要成分的複合材料、或其它合適的材料、或上述之組合。另一方面,彩色濾光層121可具有多個彩色濾光圖案,且這些彩色濾光圖案彼此分離開來地沿方向X排列於基板101上(如圖1所示)。換句話說,彩色濾光層121在任兩相鄰的彩色濾光圖案(例如第一彩色濾光圖案1211與第二彩色濾光圖案1212)之間具有一開槽121a,且此開槽121a在基板101的法線方向上重疊於資料線DL與第二開口120a。In this embodiment, the material of the organic insulating layer 122 may be a polymer or other suitable materials, where the polymer includes acrylic resin, photosensitive resin, Polyimide, or composite material with the above-mentioned materials as the main component, or other suitable materials, or a combination of the above. On the other hand, the color filter layer 121 may have a plurality of color filter patterns, and the color filter patterns are separated from each other and arranged on the substrate 101 along the direction X (as shown in FIG. 1 ). In other words, the color filter layer 121 has a slot 121a between any two adjacent color filter patterns (for example, the first color filter pattern 1211 and the second color filter pattern 1212), and the slot 121a is The normal direction of the substrate 101 overlaps the data line DL and the second opening 120a.

請參照圖2B及圖2C,在形成有機絕緣層122後,進行另一蝕刻步驟,移除絕緣層110在基板101的法線方向上重疊於資料線DL的部分以形成絕緣層110的第一開口110a。在本實施例中,絕緣層110的第一開口110a可暴露出資料線DL的上表面DLa、下表面DLb以及側面DLc,但本發明不以此為限。2B and 2C, after the organic insulating layer 122 is formed, another etching step is performed to remove the insulating layer 110 that overlaps the data line DL in the normal direction of the substrate 101 to form the first part of the insulating layer 110 Opening 110a. In this embodiment, the first opening 110a of the insulating layer 110 can expose the upper surface DLa, the lower surface DLb, and the side surface DLc of the data line DL, but the invention is not limited thereto.

舉例而言,此處的蝕刻步驟可以是乾式蝕刻(dry etching)製程,例如:利用反應性的氣體(蝕刻氣體)或離子、自由基對絕緣層110被第二開口120a所暴露出的部分進行蝕刻,且此處的蝕刻氣體對絕緣層110的材料與對有機層120的材料的蝕刻選擇比較高。換言之,在絕緣層110的蝕刻過程中,有機層120較不容易受蝕刻氣體所蝕刻。然而,本發明不限於此,根據其他實施例,絕緣層110的蝕刻步驟也可以濕式(wet etching)蝕刻的方式進行。For example, the etching step here may be a dry etching process, such as: using reactive gas (etching gas) or ions, radicals to perform the portion of the insulating layer 110 exposed by the second opening 120a Etching, and the etching gas here has a relatively high selection for the material of the insulating layer 110 and the material of the organic layer 120. In other words, during the etching process of the insulating layer 110, the organic layer 120 is less susceptible to etching by the etching gas. However, the present invention is not limited to this. According to other embodiments, the etching step of the insulating layer 110 may also be performed in a wet etching manner.

在絕緣層110的蝕刻過程中,由於蝕刻氣體係透過有機層120的第二開口120a與絕緣層110接觸並產生蝕刻反應。因此,於絕緣層110中所蝕刻出的第一開口110a係連通於有機層120的第二開口120a。特別一提的是,此處絕緣層110的第一開口110a所占區域於基板101上的垂直投影面積大於有機層120的第二開口120a所占區域於基板101上的垂直投影面積。During the etching process of the insulating layer 110, the etching gas system penetrates the second opening 120a of the organic layer 120 to contact the insulating layer 110 and generate an etching reaction. Therefore, the first opening 110 a etched in the insulating layer 110 is connected to the second opening 120 a of the organic layer 120. In particular, the vertical projection area of the area occupied by the first opening 110a of the insulating layer 110 on the substrate 101 is larger than the vertical projection area of the area occupied by the second opening 120a of the organic layer 120 on the substrate 101.

請參照圖2D,在絕緣層110的蝕刻步驟完成後,於有機層120上形成一遮光材料層130M,且此遮光材料層130M填入絕緣層110的第一開口110a與有機層120的第二開口120a。具體而言,有機層120具有定義第一開口110a的底面120s2以及定義第二開口120a並連接於底面120s2的側壁120s1,而遮光材料層130M在填入第一開口110a與第二開口120a後,覆蓋有機層120的側壁120s1與底面120s2以及資料線DL的上表面DLa、下表面DLb與側面DLc。在本實施例中,遮光材料層130M的材質可包括黑色樹脂材料。2D, after the etching step of the insulating layer 110 is completed, a light-shielding material layer 130M is formed on the organic layer 120, and the light-shielding material layer 130M fills the first opening 110a of the insulating layer 110 and the second opening 110a of the organic layer 120 Opening 120a. Specifically, the organic layer 120 has a bottom surface 120s2 defining the first opening 110a and a sidewall 120s1 defining the second opening 120a and connected to the bottom surface 120s2, and the light-shielding material layer 130M fills the first opening 110a and the second opening 120a, Cover the sidewalls 120s1 and the bottom surface 120s2 of the organic layer 120 and the upper surface DLa, the lower surface DLb and the side surface DLc of the data line DL. In this embodiment, the material of the light-shielding material layer 130M may include a black resin material.

接著,對遮光材料層130M進行一微影蝕刻製程,以形成遮光圖案130,如圖2E所示。舉例而言,在形成遮光圖案130的步驟中,還可同時形成重疊設置於主動元件T的間隙物135。亦即,遮光圖案130與間隙物135可屬於同一膜層。特別說明的是,此處的微影蝕刻製程可選擇性地使用半色調(half-tone)遮罩進行曝光,其中半色調區重疊於資料線DL,且半色調區的寬度略小於資料線DL的寬度,但本發明不以此為限。於此,便完成本實施例的遮光圖案130。Next, a photolithography process is performed on the light-shielding material layer 130M to form a light-shielding pattern 130, as shown in FIG. 2E. For example, in the step of forming the light-shielding pattern 130, spacers 135 overlapped on the active device T can also be formed at the same time. That is, the light shielding pattern 130 and the spacer 135 may belong to the same film layer. In particular, the photolithography process here can selectively use a half-tone mask for exposure, where the half-tone area overlaps the data line DL, and the width of the half-tone area is slightly smaller than the data line DL , But the present invention is not limited to this. At this point, the light-shielding pattern 130 of this embodiment is completed.

需說明的是,本發明並不以圖2A至圖2E揭示內容而加以限制遮光圖案130的製造方式。本發明所屬技術領域中具有通常知識者應可理解的是,本實施例的遮光圖案130也可透過較為繁瑣的製造流程來形成。例如:在形成絕緣層110後,先進行遮光圖案130之第一部分131的製作,且此第一部分131貫穿絕緣層110並覆蓋資料線DL的下表面DLb;接著,再形成具有第二開口120a的有機層120,並於第二開口120a內形成遮光圖案130的第二部分132,且彼此連接的第一部分131與第二部分132的材質可相同。然而,本發明不限於此,在其他實施例中,遮光圖案的第一部分的材質也可不同於第二部分的材質。It should be noted that the present invention does not limit the manufacturing method of the light-shielding pattern 130 based on the contents disclosed in FIGS. 2A to 2E. Those with ordinary knowledge in the technical field to which the present invention pertains should understand that the light-shielding pattern 130 of this embodiment can also be formed through a relatively complicated manufacturing process. For example: after the insulating layer 110 is formed, the first part 131 of the light shielding pattern 130 is first made, and the first part 131 penetrates the insulating layer 110 and covers the lower surface DLb of the data line DL; then, a second opening 120a is formed The organic layer 120 forms the second portion 132 of the light-shielding pattern 130 in the second opening 120a, and the material of the first portion 131 and the second portion 132 connected to each other can be the same. However, the present invention is not limited to this. In other embodiments, the material of the first part of the shading pattern may be different from the material of the second part.

在本實施例中,畫素陣列基板10包括基板101、資料線DL、畫素PX、絕緣層110、有機層120以及遮光圖案130。資料線DL與畫素PX設置於基板101上。畫素PX包括彼此電性連接的主動元件T以及畫素電極PE,且主動元件T電性連接資料線DL。絕緣層110具有重疊於資料線DL的第一開口110a。資料線DL具有定義第一開口110a的上表面DLa。有機層120設置於絕緣層110上,且具有連通於第一開口110a的第二開口120a、定義第一開口110a的底面120s2以及定義第二開口120a的側壁120s1。側壁120s1與底面120s2相連接。遮光圖案130覆蓋資料線DL的上表面DLa以及有機層120的側壁120s1與底面120s2,且具有位於第一開口110a的第一部分131以及位於第二開口120a並凸伸出有機層120的第二部分132。第一部分131與第二部分132分別具有第一寬度W1與第二寬度W2,且第一寬度W1大於第二寬度W2。In this embodiment, the pixel array substrate 10 includes a substrate 101, a data line DL, a pixel PX, an insulating layer 110, an organic layer 120, and a light shielding pattern 130. The data line DL and the pixel PX are arranged on the substrate 101. The pixel PX includes an active device T and a pixel electrode PE electrically connected to each other, and the active device T is electrically connected to the data line DL. The insulating layer 110 has a first opening 110a overlapping the data line DL. The data line DL has an upper surface DLa defining the first opening 110a. The organic layer 120 is disposed on the insulating layer 110 and has a second opening 120a connected to the first opening 110a, a bottom surface 120s2 defining the first opening 110a, and a sidewall 120s1 defining the second opening 120a. The side wall 120s1 is connected to the bottom surface 120s2. The light-shielding pattern 130 covers the upper surface DLa of the data line DL and the sidewalls 120s1 and bottom surface 120s2 of the organic layer 120, and has a first portion 131 located in the first opening 110a and a second portion located in the second opening 120a and protruding from the organic layer 120 132. The first portion 131 and the second portion 132 have a first width W1 and a second width W2, respectively, and the first width W1 is greater than the second width W2.

特別說明的是,在本實施例中,有機層120的第二開口120a所占區域在基板101的法線方向上可完全重疊於資料線DL,且第一開口110a相對於資料線DL呈現鏡像對稱,但本發明不以此為限。在其他實施例中,有機層120的第二開口120a所占區域也可部分重疊於資料線DL的一側,且遮光圖案的第一部分僅覆蓋資料線DL的一側面DLc。需說明的是,本發明並不以圖式揭示內容為限制,根據其他實施例,遮光圖案的第一部分(或者是絕緣層的第一開口)也可重疊於掃描線SL或共用線CL。Specifically, in this embodiment, the area occupied by the second opening 120a of the organic layer 120 can completely overlap the data line DL in the normal direction of the substrate 101, and the first opening 110a is a mirror image with respect to the data line DL. Symmetric, but the present invention is not limited to this. In other embodiments, the area occupied by the second opening 120a of the organic layer 120 may partially overlap one side of the data line DL, and the first part of the light shielding pattern only covers one side surface DLc of the data line DL. It should be noted that the present invention is not limited to the content of the drawings. According to other embodiments, the first part of the light shielding pattern (or the first opening of the insulating layer) may also overlap the scan line SL or the common line CL.

舉例而言,如圖1所示,定義出一畫素PX之開口區的多條訊號線(例如兩條資料線DL、一條掃描線SL以及一條共用線CL)與此畫素PX之畫素電極PE相鄰或相重疊的區域都可成為遮光圖案的設置處。並且透過遮光圖案位於第二開口的第二部分的寬度小於遮光圖案位於第一開口的第一部分的寬度,可增加畫素之畫素電極的可佈局空間,有助於提升畫素PX的開口率(Aperture Ratio,AR)。For example, as shown in FIG. 1, a plurality of signal lines (such as two data lines DL, a scan line SL, and a common line CL) defining the opening area of a pixel PX and the pixels of this pixel PX The areas where the electrodes PE are adjacent or overlapped can be the places where the light shielding patterns are arranged. And the width of the second part of the light-shielding pattern in the second opening is smaller than the width of the first part of the light-shielding pattern in the first opening, which can increase the layout space of the pixel electrode of the pixel and help increase the aperture ratio of the pixel PX (Aperture Ratio, AR).

進一步而言,畫素陣列基板10可應用於顯示面板1,如圖2F所示。顯示面板1更包括基板201、驅動電極210、顯示介質層DM。基板201與畫素陣列基板10對向設置,且驅動電極210設置於基板201朝向畫素陣列基板10的一側表面上。顯示介質層DM夾設於驅動電極210與畫素陣列基板10之間。在本實施例中,顯示介質層DM可包含多個液晶分子。亦即,顯示面板1例如是液晶顯示面板(liquid crystal display panel,LCD Panel)。舉例而言,在本實施例中,驅動電極210例如是共用電極(common electrode),且具有一接地電位。當畫素電極PE被致能而具有一高電位時,驅動電極210與畫素電極PE之間的電位差所形成的電場可驅使這些液晶分子轉動。藉此,可控制背光(未繪示)在通過畫素PX後的光強度,以達到顯示畫面的效果。特別一提的是,夾設於基板201與畫素陣列基板10之間的間隙物135,可用以將顯示介質層DM在基板101的法線方向上的厚度控制在一設定值。Furthermore, the pixel array substrate 10 can be applied to the display panel 1, as shown in FIG. 2F. The display panel 1 further includes a substrate 201, a driving electrode 210, and a display medium layer DM. The substrate 201 is arranged opposite to the pixel array substrate 10, and the driving electrode 210 is arranged on the surface of the substrate 201 facing the pixel array substrate 10. The display medium layer DM is sandwiched between the driving electrode 210 and the pixel array substrate 10. In this embodiment, the display medium layer DM may include a plurality of liquid crystal molecules. That is, the display panel 1 is, for example, a liquid crystal display panel (LCD Panel). For example, in this embodiment, the driving electrode 210 is, for example, a common electrode, and has a ground potential. When the pixel electrode PE is activated and has a high potential, the electric field formed by the potential difference between the driving electrode 210 and the pixel electrode PE can drive the liquid crystal molecules to rotate. In this way, the light intensity of the backlight (not shown) after passing through the pixel PX can be controlled to achieve the effect of displaying the picture. In particular, the spacer 135 sandwiched between the substrate 201 and the pixel array substrate 10 can be used to control the thickness of the display medium layer DM in the normal direction of the substrate 101 to a set value.

以下將列舉另一些實施例以詳細說明本揭露,其中相同的構件將標示相同的符號,並且省略相同技術內容的說明,省略部分請參考前述實施例,以下不再贅述。特別說明的是,以下實施例的畫素陣列基板均可用以取代上述顯示面板1中的畫素陣列基板10。Other embodiments will be listed below to describe the disclosure in detail, wherein the same components will be marked with the same symbols, and the description of the same technical content will be omitted. For the omitted parts, please refer to the foregoing embodiments, and will not be repeated hereafter. In particular, the pixel array substrates of the following embodiments can be used to replace the pixel array substrate 10 in the display panel 1 described above.

圖3是本發明的第二實施例的畫素陣列基板的剖視圖。請參照圖3,本實施例的畫素陣列基板11與圖2E的畫素陣列基板10的主要差異在於:遮光圖案的構型不同。在本實施例中,遮光圖案130A(或者是第二部分132A)與間隙物135分別具有頂面130As與頂面135s。遮光圖案130A的頂面130As與基板101的上表面101s之間具有第一高度H1,間隙物135的頂面135s與基板101的上表面101s之間具有第二高度H2,且第一高度H1小於第二高度H2。Fig. 3 is a cross-sectional view of a pixel array substrate according to a second embodiment of the present invention. Please refer to FIG. 3, the main difference between the pixel array substrate 11 of this embodiment and the pixel array substrate 10 of FIG. 2E is that the configuration of the light shielding pattern is different. In this embodiment, the light shielding pattern 130A (or the second portion 132A) and the spacer 135 have a top surface 130As and a top surface 135s, respectively. There is a first height H1 between the top surface 130As of the light-shielding pattern 130A and the upper surface 101s of the substrate 101, the top surface 135s of the spacer 135 and the upper surface 101s of the substrate 101 have a second height H2, and the first height H1 is less than The second height H2.

值得一提的是,在形成遮光材料層時,由於絕緣層110與有機層120分別設有第一開口110a與第二開口120a,遮光材料層重疊於第二開口120a的部分膜面可凹陷於其他部分的膜面。藉此,在遮光材料層的圖案化過程中,無需使用半色調(half-tone)遮罩進行曝光,即可形成遮光圖案130A與間隙物135之間的高度差。更具體地說,在本實施例中,遮光圖案130A還可具有輔助間隙物的功能。亦即,透過遮光圖案130A與間隙物135之間的高度差,可提升顯示介質層的厚度均勻性,並增加顯示面板的製程容許度(process latitude),有助於提升顯示面板的生產良率。It is worth mentioning that when the light-shielding material layer is formed, since the insulating layer 110 and the organic layer 120 are respectively provided with the first opening 110a and the second opening 120a, part of the film surface of the light-shielding material layer overlapping the second opening 120a can be recessed in Other parts of the membrane surface. Thereby, during the patterning process of the light-shielding material layer, the height difference between the light-shielding pattern 130A and the spacer 135 can be formed without using a half-tone mask for exposure. More specifically, in this embodiment, the light shielding pattern 130A may also have a function of auxiliary spacers. That is, through the height difference between the light shielding pattern 130A and the spacer 135, the thickness uniformity of the display medium layer can be improved, and the process latitude of the display panel can be increased, which helps to improve the production yield of the display panel. .

圖4是本發明的第三實施例的畫素陣列基板的剖視圖。請參照圖4,本實施例的畫素陣列基板12與圖2E的畫素陣列基板10的主要差異在於:遮光圖案的構型不同。在本實施例中,第一開口110a-1僅貫穿第二子絕緣層112,且遮光圖案130B的第一部分131僅覆蓋資料線DL的上表面DLa。換句話說,遮光圖案130B的第一部分131A的第一寬度W1’小於畫素陣列基板10的遮光圖案130的第一部分131的第一寬度W1,但仍大於第二部分132的第二寬度W2。據此,在不損及遮光圖案130B的遮光效果的前提下,可有效縮減遮光圖案130B的第二部分132的第二寬度W2,有助於增加畫素電極PE的可佈局空間,進而提升畫素PX的開口率(Aperture Ratio,AR)。4 is a cross-sectional view of the pixel array substrate of the third embodiment of the present invention. Please refer to FIG. 4, the main difference between the pixel array substrate 12 of this embodiment and the pixel array substrate 10 of FIG. 2E is that the configuration of the light shielding pattern is different. In this embodiment, the first opening 110a-1 only penetrates the second sub-insulating layer 112, and the first portion 131 of the light shielding pattern 130B only covers the upper surface DLa of the data line DL. In other words, the first width W1' of the first portion 131A of the light shielding pattern 130B is smaller than the first width W1 of the first portion 131 of the light shielding pattern 130 of the pixel array substrate 10, but is still greater than the second width W2 of the second portion 132. Accordingly, without compromising the light-shielding effect of the light-shielding pattern 130B, the second width W2 of the second portion 132 of the light-shielding pattern 130B can be effectively reduced, which helps increase the layout space of the pixel electrode PE, thereby improving the picture Aperture Ratio (AR) of prime PX.

圖5是本發明的第四實施例的畫素陣列基板的俯視圖。圖6是圖5的畫素陣列基板的剖視圖。請參照圖5及圖6,本實施例的畫素陣列基板20與圖1的畫素陣列基板10的主要差異在於:訊號線與畫素之間的配置關係不同以及遮光圖案的第一部分的構型不同。在本實施例中,在方向X上排列且相鄰的兩畫素(例如第一畫素PX1與第二畫素PX2)之間可設有兩訊號線,分別為第一資料線DL1與第二資料線DL2,其中第一資料線DL1與第二資料線DL2相鄰且平行排列於基板101上。第一畫素PX1與第二畫素PX2分別電性連接於第一資料線DL1與第二資料線DL2。Fig. 5 is a top view of a pixel array substrate according to a fourth embodiment of the present invention. Fig. 6 is a cross-sectional view of the pixel array substrate of Fig. 5. 5 and 6, the main difference between the pixel array substrate 20 of this embodiment and the pixel array substrate 10 of FIG. 1 lies in the difference in the arrangement relationship between the signal lines and the pixels and the structure of the first part of the light-shielding pattern. Different types. In this embodiment, two adjacent pixels (for example, the first pixel PX1 and the second pixel PX2) arranged in the direction X may be provided with two signal lines, which are the first data line DL1 and the first data line DL1 and the second pixel PX2. Two data lines DL2, where the first data line DL1 and the second data line DL2 are adjacent and arranged in parallel on the substrate 101. The first pixel PX1 and the second pixel PX2 are electrically connected to the first data line DL1 and the second data line DL2, respectively.

在本實施例中,遮光圖案130C的第一部份131B同時覆蓋第一資料線DL1的上表面DL1a、下表面DL1b與側面DL1c以及第二資料線DL2的上表面DL2a、下表面DL2b與側面DL2c。也就是說,遮光圖案130C係設置在第一資料線DL1與第二資料線DL2之間的區域。透過第一部分131B覆蓋部分的第一資料線DL1、部分的第二資料線DL2以及這兩條資料線之間的區域,可阻擋背光自這兩條資料線之間的區域出射而產生漏光,並且藉由縮短第二部分132在垂直基板101法線方向上的寬度,以增加畫素電極的可佈局空間,進而提升畫素的開口率(Aperture Ratio,AR)。In this embodiment, the first portion 131B of the light-shielding pattern 130C simultaneously covers the upper surface DL1a, the lower surface DL1b, and the side surface DL1c of the first data line DL1, and the upper surface DL2a, the lower surface DL2b, and the side surface DL2c of the second data line DL2. . In other words, the light shielding pattern 130C is disposed in the area between the first data line DL1 and the second data line DL2. The first part 131B covers part of the first data line DL1, part of the second data line DL2, and the area between the two data lines, which can block the backlight from emitting from the area between the two data lines and cause light leakage, and By shortening the width of the second portion 132 in the direction perpendicular to the normal line of the substrate 101, the layout space of the pixel electrode can be increased, thereby increasing the aperture ratio (AR) of the pixel.

另一方面,本實施例的各畫素的畫素電極可分為第一子部PEa與第二子部PEb,而主動元件T’可具有兩個汲極,分別為汲極D1與汲極D2,其中畫素電極的第一子部PEa與第二子部PEb分別電性連接主動元件T’的汲極D1與汲極D2,但本發明不以此為限。On the other hand, the pixel electrode of each pixel of this embodiment can be divided into a first sub-part PEa and a second sub-part PEb, and the active device T'can have two drains, namely a drain D1 and a drain D2, where the first sub-part PEa and the second sub-part PEb of the pixel electrode are electrically connected to the drain D1 and the drain D2 of the active device T′, but the invention is not limited thereto.

圖7是本發明的第五實施例的畫素陣列基板的剖視圖。請參照圖7,本實施例的畫素陣列基板21與圖6的畫素陣列基板20的主要差異在於:有機層的組成不同。在本實施例中,有機層120僅包括彩色濾光層121,且間隙物135(或畫素電極)與彩色濾光層121之間設有一無機絕緣層140。更具體地說,彩色濾光層121的開槽121a可定義出有機層120A的第二開口120a-1,且遮光圖案130D的第二部分132B在垂直基板101的法線方向上的寬度由第二開口120a-1內朝遮光圖案130D的頂面130Ds逐漸縮小。特別一提的是,由於第二開口120a-1位於絕緣層110一側的底部口徑較大,在絕緣層110的蝕刻過程中,可縮短反應時間,有助於提升蝕刻效率。在本實施例中,無機絕緣層140的材質可包括氧化矽、氮化矽、氮氧化矽、其它合適的材料、或上述至少二種材料的堆疊層。FIG. 7 is a cross-sectional view of a pixel array substrate according to a fifth embodiment of the present invention. Please refer to FIG. 7, the main difference between the pixel array substrate 21 of this embodiment and the pixel array substrate 20 of FIG. 6 is that the composition of the organic layer is different. In this embodiment, the organic layer 120 only includes the color filter layer 121, and an inorganic insulating layer 140 is provided between the spacer 135 (or pixel electrode) and the color filter layer 121. More specifically, the groove 121a of the color filter layer 121 can define the second opening 120a-1 of the organic layer 120A, and the width of the second portion 132B of the light shielding pattern 130D in the normal direction perpendicular to the substrate 101 is increased from the first The inside of the two openings 120a-1 gradually shrinks toward the top surface 130Ds of the light-shielding pattern 130D. In particular, since the bottom of the second opening 120a-1 located on the side of the insulating layer 110 has a larger diameter, during the etching process of the insulating layer 110, the reaction time can be shortened and the etching efficiency can be improved. In this embodiment, the material of the inorganic insulating layer 140 may include silicon oxide, silicon nitride, silicon oxynitride, other suitable materials, or a stacked layer of at least two of the foregoing materials.

綜上所述,在本發明一實施例的畫素陣列基板中,絕緣層與有機層分別具有相連通的第一開口與第二開口,且電性連接於畫素之主動元件的第一訊號線與這兩開口相重疊。透過遮光圖案位於第一開口的第一部分的寬度大於遮光圖案位於第二開口的第二部分的寬度,可增加畫素之畫素電極的可佈局空間,有助於提升畫素的開口率(Aperture Ratio,AR)。In summary, in the pixel array substrate of an embodiment of the present invention, the insulating layer and the organic layer respectively have a first opening and a second opening that are connected to each other, and are electrically connected to the first signal of the active device of the pixel The line overlaps the two openings. The width of the first part of the light-shielding pattern located in the first opening is greater than the width of the second part of the light-shielding pattern located in the second opening, which can increase the layout space of the pixel electrode of the pixel and help increase the aperture ratio of the pixel. Ratio, AR).

雖然本發明已以實施例揭露如上,然其並非用以限定本發明,任何所屬技術領域中具有通常知識者,在不脫離本發明的精神和範圍內,當可作些許的更動與潤飾,故本發明的保護範圍當視後附的申請專利範圍所界定者為準。Although the present invention has been disclosed in the above embodiments, it is not intended to limit the present invention. Anyone with ordinary knowledge in the relevant technical field can make some changes and modifications without departing from the spirit and scope of the present invention. The scope of protection of the present invention shall be determined by the scope of the attached patent application.

1:顯示面板 10、11、12、20、21:畫素陣列基板 101、201:基板 101s:上表面 110:絕緣層 110a、110a-1:第一開口 111:第一子絕緣層 112:第二子絕緣層 115:接觸窗 120:有機層 120a、120a-1:第二開口 120s1:側壁 120s2:底面 121:彩色濾光層 121a:開槽 121b:開孔 1211、1212:彩色濾光圖案 122:有機絕緣層 122M:有機絕緣材料層 130、130A、130B、130C、130D:遮光圖案 130As、130Ds、135s:頂面 130M:遮光材料層 131、131A、131B:第一部分 132、132A、132B:第二部分 135:間隙物 210:驅動電極 CL:共用線 D、D1、D2:汲極 DL、DL1、DL2:資料線 DLa、DL1a、DL2a:上表面 DLb、DL1b、DL2b:下表面 DLc、DL1c、DL2c:側面 DM:顯示介質層 G:閘極 H1:第一高度 H2:第二高度 OC:歐姆接觸層 PE:畫素電極 PEa:第一子部 PEb:第二子部 PX、PX1、PX2:畫素 S:源極 SC:半導體圖案 SL:掃描線 T、T’:主動元件 W1、W’:第一寬度 W2:第二寬度 X、Y:方向 A-A’、B-B’、C-C’:剖線1: display panel 10, 11, 12, 20, 21: pixel array substrate 101, 201: substrate 101s: upper surface 110: Insulation layer 110a, 110a-1: first opening 111: first sub-insulating layer 112: second sub-insulation layer 115: contact window 120: organic layer 120a, 120a-1: second opening 120s1: side wall 120s2: bottom surface 121: Color filter layer 121a: Slotting 121b: opening 1211, 1212: color filter pattern 122: organic insulating layer 122M: organic insulating material layer 130, 130A, 130B, 130C, 130D: shading pattern 130As, 130Ds, 135s: top surface 130M: shading material layer 131, 131A, 131B: Part One 132, 132A, 132B: Part Two 135: Interstitial Object 210: drive electrode CL: Common line D, D1, D2: drain DL, DL1, DL2: data line DLa, DL1a, DL2a: upper surface DLb, DL1b, DL2b: bottom surface DLc, DL1c, DL2c: side DM: display medium layer G: Gate H1: first height H2: second height OC: Ohmic contact layer PE: pixel electrode PEa: The first sub-part PEb: The second sub-part PX, PX1, PX2: pixels S: source SC: Semiconductor pattern SL: scan line T, T’: Active component W1, W’: first width W2: second width X, Y: direction A-A’, B-B’, C-C’: cut line

圖1是本發明的第一實施例的畫素陣列基板的俯視圖。 圖2A至圖2E是圖1的畫素陣列基板的製造流程的剖視圖。 圖2F是採用圖2E的畫素陣列基板的顯示面板的剖視圖。 圖3是本發明的第二實施例的畫素陣列基板的剖視圖。 圖4是本發明的第三實施例的畫素陣列基板的剖視圖。 圖5是本發明的第四實施例的畫素陣列基板的俯視圖。 圖6是圖5的畫素陣列基板的剖視圖。 圖7是本發明的第五實施例的畫素陣列基板的剖視圖。FIG. 1 is a top view of a pixel array substrate according to a first embodiment of the present invention. 2A to 2E are cross-sectional views of the manufacturing process of the pixel array substrate of FIG. 1. FIG. 2F is a cross-sectional view of a display panel using the pixel array substrate of FIG. 2E. Fig. 3 is a cross-sectional view of a pixel array substrate according to a second embodiment of the present invention. 4 is a cross-sectional view of the pixel array substrate of the third embodiment of the present invention. Fig. 5 is a top view of a pixel array substrate according to a fourth embodiment of the present invention. Fig. 6 is a cross-sectional view of the pixel array substrate of Fig. 5. FIG. 7 is a cross-sectional view of a pixel array substrate according to a fifth embodiment of the present invention.

10:畫素陣列基板10: Pixel array substrate

101:基板101: substrate

101s:上表面101s: upper surface

110:絕緣層110: Insulation layer

110a:第一開口110a: first opening

111:第一子絕緣層111: first sub-insulating layer

112:第二子絕緣層112: second sub-insulation layer

120:有機層120: organic layer

120a:第二開口120a: second opening

120s1:側壁120s1: side wall

120s2:底面120s2: bottom surface

121:彩色濾光層121: Color filter layer

1211、1212:彩色濾光圖案1211, 1212: color filter pattern

122:有機絕緣層122: organic insulating layer

130:遮光圖案130: shading pattern

131:第一部分131: Part One

132:第二部分132: Part Two

135:間隙物135: Interstitial Object

CL:共用線CL: Common line

D:汲極D: Dip pole

DL:資料線DL: Data line

DLa:上表面DLa: upper surface

DLb:下表面DLb: bottom surface

DLc:側面DLc: side

G:閘極G: Gate

OC:歐姆接觸層OC: Ohmic contact layer

PE:畫素電極PE: pixel electrode

PX:畫素PX: pixel

S:源極S: source

SC:半導體圖案SC: Semiconductor pattern

SL:掃描線SL: scan line

T:主動元件T: Active component

W1:第一寬度W1: first width

W2:第二寬度W2: second width

A-A’:剖線A-A’: Sectional line

Claims (11)

一種畫素陣列基板,包括: 一基板; 一第一訊號線,設置於該基板上; 一第一畫素,設置於該基板上,該第一畫素包括: 一第一主動元件,電性連接該第一訊號線;以及 一第一畫素電極,電性連接該第一主動元件; 一絕緣層,覆蓋該基板,該絕緣層具有重疊於該第一訊號線的一第一開口,其中該第一訊號線具有定義該第一開口的一第一上表面; 一有機層,設置於該絕緣層上,該有機層具有連通於該第一開口的一第二開口,其中該有機層具有定義該第一開口的一底面以及定義該第二開口的一側壁,且該底面連接於該側壁;以及 一遮光圖案,覆蓋該第一訊號線的該第一上表面以及該有機層的該側壁與該底面,且具有位於該第一開口的一第一部分以及位於該第二開口並凸伸出該有機層的一第二部分,其中該第一部分與該第二部分分別具有一第一寬度與一第二寬度,且該第一寬度大於該第二寬度。A pixel array substrate includes: A substrate; A first signal line arranged on the substrate; A first pixel is disposed on the substrate, and the first pixel includes: A first active component electrically connected to the first signal line; and A first pixel electrode electrically connected to the first active element; An insulating layer covering the substrate, the insulating layer having a first opening overlapping the first signal line, wherein the first signal line has a first upper surface defining the first opening; An organic layer disposed on the insulating layer, the organic layer having a second opening connected to the first opening, wherein the organic layer has a bottom surface defining the first opening and a side wall defining the second opening, And the bottom surface is connected to the side wall; and A light-shielding pattern covers the first upper surface of the first signal line and the sidewall and bottom surface of the organic layer, and has a first portion located at the first opening and located at the second opening and protruding from the organic layer. A second part of the layer, wherein the first part and the second part have a first width and a second width respectively, and the first width is greater than the second width. 如申請專利範圍第1項所述的畫素陣列基板,其中該遮光圖案的該第一部分與該第二部分的材質相同。According to the pixel array substrate described in claim 1, wherein the first part and the second part of the light-shielding pattern are made of the same material. 如申請專利範圍第1項所述的畫素陣列基板,更包括: 一間隙物,設置於該基板上,其中該遮光圖案的一第一頂面與該基板的一上表面之間具有一第一高度,該間隙物的一第二頂面與該基板的該上表面之間具有一第二高度,且該第一高度小於該第二高度。The pixel array substrate described in item 1 of the scope of patent application further includes: A spacer is disposed on the substrate, wherein there is a first height between a first top surface of the shading pattern and an upper surface of the substrate, and a second top surface of the spacer is connected to the upper surface of the substrate. There is a second height between the surfaces, and the first height is smaller than the second height. 如申請專利範圍第3項所述的畫素陣列基板,其中該遮光圖案與該間隙物屬於同一膜層。According to the pixel array substrate described in item 3 of the scope of patent application, the light shielding pattern and the spacer belong to the same film layer. 如申請專利範圍第1項所述的畫素陣列基板,其中該有機層為一彩色濾光層與一有機絕緣層的疊層結構,該有機絕緣層覆蓋該彩色濾光層,且設有定義該第二開口的該側壁。The pixel array substrate according to item 1 of the scope of patent application, wherein the organic layer is a stacked structure of a color filter layer and an organic insulating layer, and the organic insulating layer covers the color filter layer and has a definition The side wall of the second opening. 如申請專利範圍第1項所述的畫素陣列基板,其中該絕緣層為一第一子絕緣層與一第二子絕緣層的疊層結構,該第一子絕緣層位於該基板與該第一訊號線之間,該第二子絕緣層位於該第一訊號線與該有機層之間,且該第一開口貫穿該第二子絕緣層。According to the pixel array substrate described in claim 1, wherein the insulating layer is a laminated structure of a first sub-insulating layer and a second sub-insulating layer, and the first sub-insulating layer is located between the substrate and the second sub-insulating layer. Between a signal line, the second sub-insulating layer is located between the first signal line and the organic layer, and the first opening penetrates the second sub-insulating layer. 如申請專利範圍第6項所述的畫素陣列基板,其中該第一開口更貫穿該第一子絕緣層,該第一訊號線還具有定義該第一開口的一第一下表面以及連接該第一上表面與該第一下表面的一第一側面,且該遮光圖案更覆蓋該第一訊號線的該第一下表面與該第一側面。According to the pixel array substrate described in claim 6, wherein the first opening further penetrates the first sub-insulating layer, the first signal line further has a first lower surface defining the first opening and connecting the A first side surface of the first upper surface and the first lower surface, and the shading pattern further covers the first lower surface and the first side surface of the first signal line. 如申請專利範圍第1項所述的畫素陣列基板,更包括: 一第二訊號線,與該第一訊號線相鄰且平行排列於該基板上,其中該第二訊號線具有定義該第一開口的一第二上表面,且該遮光圖案更覆蓋該第二訊號線的該第二上表面;以及 一第二畫素,設置於該基板上,該第二畫素包括: 一第二主動元件,電性連接該第二訊號線;以及 一第二畫素電極,電性連接該第二主動元件, 其中該第一訊號線與該第二訊號線位於該第一畫素與該第二畫素之間,且該遮光圖案位於該第一訊號線與該第二訊號線之間。The pixel array substrate described in item 1 of the scope of patent application further includes: A second signal line adjacent to the first signal line and arranged in parallel on the substrate, wherein the second signal line has a second upper surface defining the first opening, and the shading pattern further covers the second signal line The second upper surface of the signal line; and A second pixel is disposed on the substrate, and the second pixel includes: A second active component electrically connected to the second signal line; and A second pixel electrode electrically connected to the second active element, The first signal line and the second signal line are located between the first pixel and the second pixel, and the shading pattern is located between the first signal line and the second signal line. 如申請專利範圍第8項所述的畫素陣列基板,其中該絕緣層為一第一子絕緣層與一第二子絕緣層的疊層結構,該第一子絕緣層位於該基板與該第一訊號線之間,該第二子絕緣層位於該第一訊號線與該有機層之間,且該第一開口貫穿該第二子絕緣層。The pixel array substrate according to item 8 of the scope of patent application, wherein the insulating layer is a laminated structure of a first sub-insulating layer and a second sub-insulating layer, and the first sub-insulating layer is located between the substrate and the Between a signal line, the second sub-insulating layer is located between the first signal line and the organic layer, and the first opening penetrates the second sub-insulating layer. 如申請專利範圍第9項所述的畫素陣列基板,其中該第一開口更貫穿該第一子絕緣層,該第一訊號線還具有定義該第一開口的一第一下表面以及連接該第一上表面與該第一下表面的一第一側面,該第二訊號線還具有定義該第一開口的一第二下表面以及連接該第二上表面與該第二下表面的一第二側面,且該遮光圖案更覆蓋該第一訊號線的該第一下表面與該第一側面以及該第二訊號線的該第二下表面與該第二側面。The pixel array substrate according to claim 9, wherein the first opening further penetrates the first sub-insulation layer, and the first signal line further has a first lower surface defining the first opening and connecting the A first side surface of the first upper surface and the first lower surface, the second signal line further has a second lower surface defining the first opening and a first connecting the second upper surface and the second lower surface Two side surfaces, and the shading pattern further covers the first lower surface and the first side surface of the first signal line and the second lower surface and the second side surface of the second signal line. 如申請專利範圍第1項所述的畫素陣列基板,其中該有機層為一彩色濾光層。According to the pixel array substrate described in item 1 of the scope of patent application, the organic layer is a color filter layer.
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