TW202109148A - Display device and manufacturing method thereof - Google Patents

Abstract

A display device and a manufacturing method thereof are provided. The display device includes a first substrate, a second substrate opposite to the first substrate, an inorganic layer disposed on the first substrate, signal lines, active components electrically connected with the signal lines, an organic light-emitting layer disposed on the inorganic layer, and a glass frit sealant layer connected with the inorganic layer. The inorganic layer has trenches. The glass frit sealant layer is located in a sealant area on the inorganic material layer. At least a portion of the signal lines is located on one side of the glass frit sealant layer. A portion of a side surface of the glass frit sealant layer is contacted with the organic light-emitting layer. The glass frit sealant layer overlaps the trenches. An extending direction of each of the trenches is staggered with an extending direction of the adjacent periphery of the sealant area.

Description

Display device and manufacturing method thereof

The present invention relates to a display device, and more particularly to a display device including an organic light-emitting layer and a manufacturing method thereof.

Organic light-emitting diodes (OLEDs) have the characteristics of self-luminescence, fast response, wide viewing angle, high contrast, and thinness. Therefore, countries around the world are committed to the development of related technologies for organic light-emitting diodes. At present, a general organic light-emitting diode display device includes an active device substrate, a cover plate, an organic light-emitting diode, and an encapsulant. Since inorganic materials can block the penetration of external moisture and oxygen, inorganic materials can be used as sealants.

The present invention provides a display device, which can improve the problem that the organic light-emitting layer affects the bonding ability of the glass frit sealant layer.

The present invention provides a method for manufacturing a display device, which can improve the problem that the organic light-emitting layer affects the bonding ability of the glass frit encapsulant layer.

At least one embodiment of the present invention provides a display device. The display device includes a first substrate, a second substrate opposite to the first substrate, an inorganic material layer on the first substrate, a plurality of signal lines, a plurality of active components electrically connected to the signal lines, and an organic layer on the inorganic material layer. The light-emitting layer and the glass frit encapsulant layer contacting the inorganic material layer. The inorganic material layer has a plurality of grooves. The signal line and the active component are located on the active area of the first substrate. The glass frit sealing layer is located in the sealing area on the inorganic material layer. At least part of the signal line is located on one side of the glass frit encapsulant layer. Part of the side surface of the frit encapsulant layer contacts the organic light-emitting layer. The glass frit sealant layer overlaps the groove. The extending direction of the long side of each groove is staggered with the extending direction of the edge of the adjacent sealing area.

At least one embodiment of the present invention provides a method for manufacturing a display device, including: providing a first substrate; forming an inorganic material layer on the first substrate, and the inorganic material layer has a plurality of grooves; forming a plurality of signal lines and electrical A plurality of active components connected to signal lines are on the active area of the first substrate; an organic material layer is formed on the inorganic material layer; a second substrate is provided; a glass frit is formed on the second substrate; the second substrate is covered on the first substrate Above, where the glass frit is located in the sealing area on the inorganic material layer, at least part of the signal line is located on one side of the glass frit, the glass frit overlaps the grooves and part of the organic material layer, and the extending directions of the long sides of the grooves are staggered In the extension direction of the edge of the adjacent sealing area; applying a first laser process from the bottom surface of the first substrate to the glass frit to remove part of the organic material layer on the bottom surface of the glass frit and form an organic light-emitting layer; A second laser process is applied to the glass frit from the top surface of the second substrate to cure the glass frit into a glass frit sealant layer, wherein the bottom surface of the glass frit sealant layer contacts the inorganic material layer, and part of the glass frit sealant layer The side contacts the organic light-emitting layer.

In order to make the above-mentioned features and advantages of the present invention more comprehensible, the following specific embodiments are described in detail in conjunction with the accompanying drawings.

FIG. 1A is a schematic top view of a display device 10 according to an embodiment of the invention. Fig. 1B is a partial enlarged schematic view of Fig. 1A. Fig. 1C is a schematic cross-sectional view taken along the section line aa' of Fig. 1A. For the convenience of description, FIG. 1A omits the depiction of the second substrate, the protective layer, the buffer layer, the organic light-emitting layer, the active device, the pixel definition layer, and the inorganic material layer. In addition, FIG. 1B omits the depiction of the second substrate and the protective layer. , Buffer layer, organic light-emitting layer, active device, pixel definition layer and part of the signal line.

1A, 1B, and 1C, the display device 10 includes a first substrate 100, an inorganic material layer 110, a plurality of signal lines 120, an active device 130, an organic light emitting layer 140, a second substrate 200, and a glass encapsulant layer 220 . In this embodiment, the display device 10 further includes a buffer layer 150, a protective layer 210, an insulating layer 160, a pixel defining layer 170, a first electrode E1, a second electrode E2, a first driving device 180, and a second driving device 190 .

The material of the first substrate 100 can be glass, quartz, organic polymer or other applicable materials. The first substrate 100 has an active area AA and a peripheral area BA surrounding the active area.

The buffer layer 150 is located on the first substrate 100 and, for example, covers the entire surface of the first substrate 100. In this embodiment, the buffer layer 150 covers the active area AA and the peripheral area BA of the first substrate 100. The buffer layer 150 is, for example, a single-layer structure or a multi-layer structure.

The inorganic material layer 110, a plurality of signal lines 120 and active devices 130 are located on the first substrate 100. The signal line 120 and the active device 130 are located on the active area AA of the first substrate 100. The inorganic material layer 110 selectively covers the entire surface of the buffer layer 150.

The active device 130 includes a channel layer 132, a gate electrode 134, a source electrode 136 and a drain electrode 138. The signal line 120 includes a scan line 122 electrically connected to the first driving device 180 and a data line 124 electrically connected to the second driving device 190. The active component 130 is electrically connected to the signal line 120.

The gate electrode 134 is electrically connected to the scan line 122. The gate electrode 134 overlaps the channel layer 132, and a gate insulating layer GI is sandwiched between the gate electrode 134 and the channel layer 132. The insulating layer ILD covers the gate 134, and the insulating layer ILD is located between the scan line 122 and the data line 124. The source electrode 136 and the drain electrode 138 are located on the insulating layer ILD, and are electrically connected to the channel layer 132 through the openings H1 and H2, respectively. The openings H1 and H2 pass through the insulating layer ILD, for example. In this embodiment, the openings H1 and H2 pass through the gate insulating layer GI and the insulating layer ILD. The source electrode 136 is electrically connected to the data line 124.

In this embodiment, the material of the insulating layer ILD includes, for example, silicon oxide, silicon nitride or other similar materials. In this embodiment, the source electrode 136, the drain electrode 138, and the data line 122 are located above the insulating layer ILD, but the invention is not limited thereto. In other embodiments, the source 136, the drain 138, and the data line 122 are located in other layers.

The inorganic material layer 110 is located on the active device 130. The material of the inorganic material layer 110 includes, for example, silicon oxide, silicon nitride or other similar materials. Compared with the use of metal materials, the inorganic material layer 110 made of silicon oxide, silicon nitride or other similar materials will not absorb the energy of the laser, thereby improving the process yield. The inorganic material layer 110 has a plurality of grooves 112. The trench 112 is, for example, located in the sealing area SA on the inorganic material layer 110. In this embodiment, both ends of the trench 112 extend beyond the sealing area SA.

The insulating layer 160 is located on the inorganic material layer 110. In some embodiments, the material of the insulating layer 160 includes organic materials, but the present invention is not limited thereto. The insulating layer 160 does not overlap the trench 112 of the inorganic material layer 110. The insulating layer 160 does not overlap the sealing area SA.

The first electrode E1 is located on the insulating layer 160 and is electrically connected to the drain electrode 138. In this embodiment, the first electrode E1 is electrically connected to the drain electrode 138 through the opening H3. The opening H3 penetrates the insulating layer 160 and the inorganic material layer 110, for example. In other embodiments, a connection structure is further included between the insulating layer 160 and the inorganic material layer 110, the first electrode E1 is electrically connected to the aforementioned connection structure through the opening of the insulating layer 160, and the aforementioned connection structure is then penetrated through the inorganic material. The opening of the layer 110 is electrically connected to the drain electrode 138.

The pixel definition layer 170 is located on the insulating layer 160. The pixel definition layer 170 includes a plurality of grooves 172, and the grooves 172 expose the first electrode E1.

The organic light emitting layer 140 is located on the pixel defining layer 170 and the inorganic material layer 110, and the portion 144 of the organic light emitting layer 140 contacts the pixel defining layer 170 and is located in the groove 172 of the pixel defining layer 170. The portion 144 of the organic light emitting layer 140 located in the groove 172 of the pixel defining layer 170 contacts the first electrode E1. In this embodiment, the other part 142 of the organic light-emitting layer 140 contacts the inorganic material layer 110 and is located in the trench 112 of the inorganic material layer 110. In addition to the light-emitting layer, the organic light-emitting layer 140 may also selectively include at least one of an electron injection layer, an electron transport layer, a hole transport layer, and a hole transport layer.

The second electrode E2 is located on the pixel defining layer 170 and the portion 144 of the organic light emitting layer 140. In this embodiment, a portion of the first electrode E1, a portion of the second electrode E2, and the portion 144 of the organic light-emitting layer 140 that overlap each other constitute an organic light-emitting diode D. The sub-pixel P located in the active area AA includes an organic light emitting diode D and an active element 130.

The second substrate 200 is opposite to the first substrate 100. The material of the second substrate 200 can be glass, quartz, organic polymer or other applicable materials.

The protective layer 210 is located on the second substrate 200. The material of the protective layer 210 is, for example, an inorganic material, but the invention is not limited thereto. In some embodiments, the material of the protective layer 210 is the same as the material of the inorganic material layer 110, but the invention is not limited thereto.

The frit sealant layer 220 is located on the second substrate 200. In this embodiment, the glass frit sealant layer 220 is located on the protective layer 210. The frit sealant layer 220 is located in the sealant area SA on the inorganic material layer 110, and the frit sealant layer 220 overlaps the groove 112. In this embodiment, the area of the frit sealing layer 220 projected vertically on the first substrate 100 is substantially equal to the area of the sealing area SA.

At least part of the signal line 120 is located on one side of the glass frit encapsulant layer 220 (for example, the outer side S1). In this embodiment, the glass frit sealant layer 220 does not overlap the signal line 120. Therefore, it will not be interfered by the signal line 120 during the laser process of the glass frit encapsulant layer 220.

The bottom surface 222 of the frit sealant layer 220 contacts the inorganic material layer 110. The side surface 224 of the frit encapsulant layer 220 is connected to the bottom surface 222, and part of the side surface 224 of the frit encapsulant layer 220 contacts the organic light emitting layer 140. It should be noted that the side surface 224 may be a curved surface, a flat surface, or a combination thereof, and the bottom surface 222 may also be a curved surface, a flat surface, or a combination thereof. The side surface 224 connects, for example, the inorganic material layer 110 and the protective layer 210. In this embodiment, the side surface 224 includes a curved surface.

The thickness of the frit encapsulant layer 220 is about 4 μm to 10 μm. For example, the thickness of the frit encapsulant layer 220 is 7 μm.

Please refer to FIG. 1B, the extending direction EX1 of the long side of each trench 112 is staggered with the edge of the adjacent sealing area SA. In other words, the extending direction EX2 of the sealing area SA and the edge of the frit sealing layer 220 is staggered with the extending direction EX1 of the long side of each trench 112. In this embodiment, since the sealing area SA and the frit sealing layer 220 are annular, the edges of the sealing area SA and the frit sealing layer 220 extend along the ring.

Since the extending direction EX1 of the long side of each groove 112 is staggered with the extending direction EX1 of the edge of the adjacent sealing area SA, when the laser process is performed to form the glass frit sealing layer 220, the glass frit sealing layer The excess organic material on the bottom surface 222 of 220 can leave along the trench 112 so that the bottom surface 222 of the frit encapsulant layer 220 contacts the inorganic material layer 110, thereby improving the bonding ability of the frit encapsulant layer 220. In other words, the groove 112 can be used as a diversion groove for the melted or vaporized organic material, so that the melted or vaporized organic material can be removed along the extending direction EX1 of the trench 112 to increase the packaging of the display device 10 strength.

In some embodiments, the extending direction EX1 of the long side of each trench 112 is perpendicular to the edge of the adjacent sealing area SA, which can better remove the excess organic material on the bottom surface 222 of the glass frit sealing layer 220.

In this embodiment, the opening OP is located in the active area AA and penetrates the first substrate 100 and the second substrate 200. The opening OP is suitable for installing a lens module or other components, for example. The opening OP is located at the inner side S2 of the sealing area SA.

In this embodiment, the opening OP is circular, and the edge of the opening OP is arc-shaped. The sealing area SA and the glass frit sealing layer 220 surround the opening OP. The sealing area SA and the glass frit sealing layer 220 are circular, and the edges of the sealing area SA and the glass frit sealing layer 220 are arc-shaped. The extending direction EX1 of the long side of the groove 112 is perpendicular to the tangential direction EX3 of the edge of the adjacent glass frit encapsulant layer 220, and the groove 112 is radial with the opening OP as the center.

In other embodiments, the shape of the opening OP is a rectangle, a triangle, an ellipse, a pentagon, a hexagon or other geometric shapes, and the shape of the sealing area SA and the glass frit sealing layer 220 is a rectangle, a triangle, or an ellipse. , Pentagon, hexagon or other geometric shapes. In some embodiments, when the shape of the sealant area SA and the frit sealant layer 220 is rectangular, triangular, pentagonal, hexagonal or other polygonal shape, the extending direction EX1 of the long side of the groove 112 is perpendicular to the sealant The side corresponding to area SA.

FIG. 2 is a schematic top view of a display device according to an embodiment of the invention. It must be noted here that the embodiment of FIG. 2 uses the element numbers and part of the content of the embodiment of FIGS. 1A to 1C, wherein the same or similar reference numbers are used to represent the same or similar elements, and the same technical content is omitted. Description. For the description of the omitted parts, reference may be made to the foregoing embodiment, which will not be repeated here.

The difference between the display device 20 of FIG. 2 and the display device 10 of FIG. 1 is that the signal line 120 of the display device 10 is not disposed between the sealing area SA and the opening OP, however, part of the signal line 120 of the display device 20 is disposed Between the sealing area SA and the opening OP.

Please refer to FIG. 2, both the inner side S2 and the outer side S1 of the sealing area SA are provided with signal lines 120. In this embodiment, the signal line 120 overlaps the part near the edge of the sealing area SA. In this embodiment, the signal line 120 does not overlap the central area of the sealing area SA.

3A to 3H are schematic cross-sectional views of a manufacturing method of a display device according to an embodiment of the present invention. It must be noted here that the embodiment of FIGS. 3A to 3H uses the element numbers and part of the content of the embodiment of FIGS. 1A to 1C, wherein the same or similar numbers are used to denote the same or similar elements, and the same elements are omitted. Description of technical content. For the description of the omitted parts, reference may be made to the foregoing embodiment, which will not be repeated here.

Please refer to FIG. 3A, a first substrate 100 is provided. A buffer layer 150 is formed on the first substrate 100.

A channel layer 132 is formed on the active area AA of the first substrate 100. In this embodiment, the channel layer 132 is formed on the buffer layer 150. The channel layer 132 is a single-layer or multi-layer structure, which includes amorphous silicon, polycrystalline silicon, microcrystalline silicon, single crystal silicon, organic semiconductor materials, oxide semiconductor materials (for example: indium zinc oxide, indium gallium zinc oxide, or Other suitable materials, or a combination of the above) or other suitable materials, or containing dopant in the above materials or a combination of the above.

A gate insulating layer GI is formed on the channel layer 132. In this embodiment, a gate insulating layer GI is formed on the channel layer 132 and the buffer layer 150.

A gate 134 and a plurality of signal lines (such as scan lines) are formed on the active area AA of the first substrate 100. In this embodiment, the gate electrode 134 overlaps the channel layer 132, and the gate electrode 134 is directly connected to part of the signal line 120.

An insulating layer ILD is formed on the gate electrode 134 and the gate insulating layer GI. A plurality of signal lines (such as data lines), source electrodes 136 and drain electrodes 138 are formed on the active area AA of the first substrate 100. The source electrode 136 and the drain electrode 138 are electrically connected to the channel layer 132 through the opening H1 and the opening H2, respectively. In this embodiment, the active device 130 is illustrated by taking a top gate type thin film transistor as an example, but the invention is not limited to this. According to other embodiments, the active element 130 may also be a bottom gate type thin film transistor or other types of thin film transistors.

3B, an inorganic material layer 110 is formed on the first substrate 100, and the inorganic material layer 110 has a plurality of grooves 112. In this embodiment, the method of forming the inorganic material layer 110 includes a chemical vapor deposition method.

Referring to FIG. 3C, an insulating layer 160 is formed on the inorganic material layer 110. The first electrode E1 is formed on the insulating layer 160. The first electrode E1 is electrically connected to the drain electrode 138 through the opening H3 in the insulating layer 160. A pixel defining layer 170 is formed on the insulating layer 160, and the pixel defining layer 170 has a groove 172 exposing the first electrode E1.

Referring to FIG. 3D, an organic material layer 140' is formed on the inorganic material layer 110. In this embodiment, an organic material layer 140' is formed on the pixel definition layer 170 and the inorganic material layer 110. The organic material layer 140' includes a portion 144 filled in the groove 172 and a portion 142' filled in the groove 112. The method of forming the organic material layer 140' includes, for example, vapor deposition.

Please refer to FIG. 3E, a second substrate 200 is provided. A protective layer 210 is formed on the second substrate 200. The method of forming the protective layer 210 includes, for example, a chemical vapor deposition method.

A glass frit 220' is formed on the second substrate 200. In this embodiment, a glass frit 220' is formed on the protective layer 210. The method of forming the glass frit 220' includes, for example, screen printing. In some embodiments, the glass frit 220' contains organic molecules, and after the glass frit 220' is screen printed, the glass frit 220' is heated to remove the organic molecules in the glass frit 220'.

Please refer to FIG. 3F to cover the second substrate 200 on the first substrate 100. In this embodiment, the second substrate 200 is covered on the first substrate 100 in a nitrogen atmosphere with a moderate vacuum (for example, 1 Pa to 1000 Pa). The glass frit 220' is located in the sealing area SA on the inorganic material layer 110, and at least part of the signal line (please refer to FIGS. 1A and 1B) is located on one side of the glass frit 220', and the glass frit 220' overlaps the groove 112 and the organic The portion 142' of the material layer 140', and the extending direction of the long side of each trench 112 (please refer to FIG. 1B) is staggered with the edge of the adjacent sealing area SA.

3G, the first laser process LS1 is applied to the glass frit 220' from the bottom surface 102 of the first substrate 100 to remove part of the organic material layer 140' on the bottom surface 222' of the glass frit 220', and form an organic light emitting层140. After removing part of the organic material layer 140' of the bottom surface 222' of the glass frit 220', the bottom surface 222' of the glass frit 220' contacts the inorganic material layer 110.

In some embodiments, the first laser process LS1 uses a laser with a wavelength of 808 microns, a moving speed of 8 mm/sec, and a power of 8 watts.

In some embodiments, the bottom surface of the glass frit 220' will melt after passing through the first laser process LS1 and adhere to the inorganic material layer 110, but the invention is not limited to this. In some embodiments, the first laser process LS1 is mainly for removing the organic material layer 140' contacting the bottom surface 222' of the frit 220'.

Although in this embodiment, the organic material layer 140' in the trench 112 is completely removed, the present invention is not limited to this. In other embodiments, part of the organic material layer 140' remains in the trench 112.

Referring to FIG. 3H, a second laser process LS2 is applied to the glass frit 220' from the top surface 202 of the second substrate 200, so that the glass frit 220' is cured into the glass frit encapsulant layer 220. The bottom surface 222 of the frit encapsulant layer 220 contacts the inorganic material layer 110, and a part of the side surface 224 of the frit encapsulant layer 220 contacts the organic light-emitting layer 140.

In some embodiments, the second laser process LS2 uses a laser with a wavelength of 808 microns, a moving speed of 8 mm/sec, and a power of 12 watts.

In some embodiments, the glass frit 220' is melted after passing through the second laser process LS2, and adheres to the inorganic material layer 110 and the protective layer 210.

Based on the above, since the method of manufacturing the display device 10 includes the first laser process LS1 and the second laser process LS2, the problem that the organic light-emitting layer 140 affects the bonding ability of the frit encapsulant layer 220 can be improved.

Although the present invention has been disclosed in the above embodiments, it is not intended to limit the present invention. Anyone with ordinary knowledge in the relevant technical field can make some changes and modifications without departing from the spirit and scope of the present invention. The scope of protection of the present invention shall be determined by the scope of the attached patent application.

10, 20: display device 100: first substrate 102: Bottom 110: Inorganic material layer 112: groove 120: signal line 122: scan line 124: Data Line 130: active component 132: Channel layer 134: Gate 136: Source 138: Dip pole 140: organic light emitting layer 140’: Organic material layer 142, 142’, 144: Partial 150: buffer layer 160: insulating layer 170: Pixel Definition Layer 172: Groove 180: The first drive device 190: second drive device 200: second substrate 202: top surface 210: protective layer 220: glass sealant layer 222: Bottom 224: side AA: active area BA: Surrounding area D: organic light emitting diode E1: first electrode E2: second electrode EX1, EX2: Extension direction EX3: Tangent direction GI: Gate insulation layer H1, H2, H3, OP: opening ILD: insulating layer LS1: The first laser process LS2: The second laser process P: Sub-pixel S1: outside S2: Inside SA: Sealing area

FIG. 1A is a schematic top view of a display device according to an embodiment of the invention. Fig. 1B is a partial enlarged schematic view of Fig. 1A. Fig. 1C is a schematic cross-sectional view taken along the section line aa' of Fig. 1A. FIG. 2 is a schematic top view of a display device according to an embodiment of the invention. 3A to 3H are schematic cross-sectional views of a manufacturing method of a display device according to an embodiment of the present invention.

10: Display device

100: first substrate

110: Inorganic material layer

112: groove

130: active component

132: Channel layer

134: Gate

136: Source

138: Dip pole

140: organic light emitting layer

142, 144: Partial

150: buffer layer

160: insulating layer

170: Pixel Definition Layer

172: Groove

200: second substrate

210: protective layer

220: glass sealant layer

222: Bottom

224: side

D: organic light emitting diode

E1: first electrode

E2: second electrode

GI: Gate insulation layer

H1, H2, H3: opening

ILD: insulating layer

S1: outside

S2: Inside

SA: Sealing area

Claims (10)

A display device includes: A first substrate and a second substrate opposite to the first substrate; An inorganic material layer located on the first substrate, and the inorganic material layer has a plurality of grooves; A plurality of signal lines and a plurality of active components electrically connected to the signal lines are located on an active area of the first substrate; An organic light emitting layer located on the inorganic material layer; and A glass frit sealant layer is located in the sealant area on the inorganic material layer and contacts the inorganic material layer, wherein at least part of the signal lines are located on one side of the glass frit sealant layer, and part of the glass frit The side surface of the sealing compound layer contacts the organic light emitting layer, wherein the glass frit sealing compound layer overlaps the grooves, and the extending direction of the long side of each groove is staggered with the extending direction of the edge of the adjacent sealing compound area . In the display device described in the first item of the scope of patent application, an opening penetrates the first substrate and the second substrate, and the frit encapsulant layer surrounds the opening. According to the display device described in item 2 of the scope of patent application, the edge of the opening is arc-shaped, and the extending direction of the long side of each groove is perpendicular to the tangent direction of the edge of the adjacent glass frit sealing layer. In the display device described in item 2 of the scope of patent application, the opening is located in the active area. As for the display device described in item 1 of the scope of patent application, the part of the glass frit encapsulant layer close to the side is overlapped with the signal lines. As for the display device described in claim 1, wherein the glass frit encapsulant layer does not overlap the signal lines. The display device according to the first item of the scope of patent application, wherein the organic light-emitting layer includes an electron injection layer, an electron transport layer, a light-emitting layer, a hole transport layer, and a hole transport layer. The display device described in item 1 of the scope of patent application further includes: An insulating layer on the inorganic material layer, A pixel definition layer is located on the insulating layer, wherein the pixel definition layer includes a plurality of grooves, and part of the organic light-emitting layer is located in the grooves. A method for manufacturing a display device includes: Providing a first substrate; Forming an inorganic material layer on the first substrate, and the inorganic material layer has a plurality of grooves; Forming a plurality of signal lines and a plurality of active components electrically connecting the signal lines on an active area of the first substrate; Forming an organic material layer on the inorganic material layer; Providing a second substrate; Forming a glass frit on the second substrate; Cover the second substrate on the first substrate, wherein the glass frit is located in the sealing area on the inorganic material layer, at least part of the signal lines are located on one side of the glass frit, and the glass frit overlaps the glass frit. Some grooves and a part of the organic material layer, and the extending direction of the long side of each groove is staggered with the extending direction of the edge of the adjacent sealing area; Applying a first laser process from the bottom surface of the first substrate to the glass frit to remove part of the organic material layer on the bottom surface of the glass frit and form an organic light-emitting layer; A second laser process is applied to the frit from the top surface of the second substrate to cure the frit into a frit encapsulant layer, wherein the bottom surface of the frit encapsulant layer contacts the inorganic material layer, and Part of the side surface of the frit encapsulant layer contacts the organic light-emitting layer. According to the manufacturing method of the display device described in claim 9, wherein the energy of the first laser process is lower than that of the second laser process.

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