TW202109038A - Humidity sensor and manufacturing method thereof - Google Patents

Abstract

The invention provides a humidity sensor and a method of manufacturing the same. The humidity sensor comprises a substrate, an electrode layer, a semiconductor layer and a humidity sensing layer. The electrode layer is disposed on the substrate. The semiconductor layer is on the electrode layer. The humidity sensing layer is located on the semiconductor layer, wherein the humidity sensing layer is composed of the structure of the formula (I):

Description

Humidity sensor and manufacturing method thereof

The invention relates to a humidity sensor and a manufacturing method thereof.

In the process of laminating or dispensing mobile phones, the environmental humidity in the process workshop has a considerable impact on the product yield. Therefore, if the environmental humidity of the workshop can be monitored at any time during the above-mentioned manufacturing process, the process personnel can adjust the environmental humidity accordingly to make the manufacturing process proceed smoothly. However, the impedance value measured by the traditional humidity sensor is usually only 2 to 3 orders of magnitude, which is not sufficient to meet the above requirements. Therefore, there is a need for a humidity sensor with higher sensitivity.

(I)， 其中R為C1~C20的直鏈或支鏈烷基，X為一單股脫氧核醣核酸。One aspect of the present invention is to provide a humidity sensor. The humidity sensor includes a substrate, an electrode layer, a semiconductor layer, and a humidity sensing layer. The electrode layer is arranged on the substrate. The semiconductor layer is located on the electrode layer. The humidity sensing layer is located on the semiconductor layer, wherein the humidity sensing layer is composed of the structure of formula (I):

(I), where R is a C1-C20 linear or branched alkyl group, and X is a single strand of deoxyribonucleic acid.

In one or more embodiments, the single-stranded deoxyribonucleic acid comprises adenine, thymine, guanine, cytosine, and a combination thereof.

In one or more embodiments, the semiconductor layer includes tin dioxide.

In one or more embodiments, the electrode layer has an interdigitated structure.

(I)， 其中R為C1~C20的直鏈或支鏈烷基，X為一單股脫氧核醣核酸。Another aspect of the present invention is to provide a method of manufacturing a humidity sensor. The method includes the following steps: providing a substrate and an electrode layer, wherein the electrode layer is located on the substrate; forming a semiconductor layer on the electrode layer; and forming a humidity sensing layer on the semiconductor layer, the humidity sensing layer is determined by the formula (I ) The structure consists of:

(I), where R is a C1-C20 linear or branched alkyl group, and X is a single strand of deoxyribonucleic acid.

In one or more embodiments, the step of forming the semiconductor layer on the electrode layer includes depositing a plasma on the electrode layer, wherein the plasma is a mixture of tetramethyltin and oxygen.

In one or more embodiments, the step of forming a humidity sensing layer on the electrode layer includes the following sub-steps: forming an amine-based structure on the semiconductor layer; connecting a linear or branched alkyl aldehyde structure to the amine-based structure ; And connecting a single strand of deoxyribonucleic acid to the linear or branched alkyl aldehyde structure.

In one or more embodiments, the sub-step of forming an amine-based structure on the semiconductor layer includes a photopolymerization reaction.

In one or more embodiments, after performing the photopolymerization reaction, the sub-step of forming an amine-based structure on the semiconductor layer further includes immersing the semiconductor layer in a polyethyleneimine solution.

In one or more embodiments, the single-stranded deoxyribonucleic acid comprises adenine, thymine, guanine, cytosine, and a combination thereof.

In order to make the description of the present disclosure more detailed and complete, the following provides an illustrative description for the implementation aspects and specific embodiments of the present invention; this is not the only way to implement or use the specific embodiments of the present invention.

The specific embodiments of the components and arrangements described below are for simplifying the present disclosure. Of course, these are only examples and are not intended to limit the present disclosure. For example, forming the first feature on or on the second feature in the subsequent description may include an embodiment of the first feature and the second feature that are in direct contact, and may also include the first feature and the second feature. An embodiment in which an additional feature is formed between the second feature so that the first feature and the second feature are not in direct contact. In addition, component symbols and/or letters may be repeated in each embodiment of the present disclosure. This repetition is for the purpose of simplification and clarity, and does not indicate the relationship between the various embodiments and/or configurations discussed.

In addition, spatially relative terms can be used in this article, such as "beneath", "below", "lower", "above", "upper" and Similar terms are used to describe the relationship between one element or feature and another element or feature in the schema. These spatially relative terms cover not only the orientation shown in the figure but also the different orientations of the device in use or operation. The device can also be converted to other orientations (rotated by 90 degrees or other orientations), so the spatial relative description used in this article should be interpreted similarly.

One aspect of the present invention is to provide a method of manufacturing a humidity sensor. FIG. 1 is a flowchart of a method 10 for manufacturing a humidity sensor according to an embodiment of the present invention. As shown in Figure 1, the method 10 includes steps S01 to S03.

Step S01 is performed to provide a substrate 100 and an electrode layer 200, as shown in FIG. 2. The electrode layer 200 is located on the substrate 100. In one embodiment, the material of the substrate 100 includes polyimide, polyester, glass, etc., but is not limited thereto. In one embodiment, the material of the electrode layer 200 includes a silver-palladium (Ag-Pd) electrode. In one embodiment, the electrode structure 200 may include a first electrode and a second electrode (not shown). In one embodiment, the electrode layer 200 has an interdigitated structure (not shown).

Step S02 is performed to form a semiconductor layer on the electrode layer. As shown in FIG. 3, the semiconductor layer 300 is located on the electrode layer 200. In one embodiment, the semiconductor layer 300 includes, but is not limited to, an inorganic semiconductor material doped with group III-V elements, such as tin dioxide. In one or more embodiments, the step of forming the semiconductor layer 300 on the electrode layer 200 includes depositing a plasma on the electrode layer. The plasma can be, for example, a mixture of tetramethyltin (TMT) and oxygen.

(I)， 其中R為C1~C20的直鏈或支鏈烷基，X為一單股脫氧核醣核酸。在一或多個實施方式中，單股脫氧核醣核酸包含腺嘌呤、胸腺嘧啶、鳥嘌呤、胞嘧啶及其一組合。Step S03 is performed to form a humidity sensing layer on the semiconductor layer. As shown in FIG. 4, the humidity sensing layer 400 is located on the semiconductor layer 300. The humidity sensing layer 400 is composed of the structure of formula (I):

(I), where R is a C1-C20 linear or branched alkyl group, and X is a single strand of deoxyribonucleic acid. In one or more embodiments, the single-stranded deoxyribonucleic acid comprises adenine, thymine, guanine, cytosine, and a combination thereof.

It is worth noting that the single strand of deoxyribonucleic acid in the humidity sensing layer 400 can provide specific technical effects. Specifically, adenine, thymine, guanine, and cytosine in a single strand of deoxyribonucleic acid have certain water absorption capacity and high sensitivity. Therefore, the single strand of deoxyribonucleic acid in the humidity sensing layer 400 can be used as a probe for detecting moisture in the surrounding environment, and it can measure the environmental humidity more precisely, and the measured impedance value can reach 4 changes. More than orders of magnitude. Therefore, compared with the impedance value measured by the traditional humidity sensor, the change is usually only 2 to 3 orders of magnitude. The humidity sensor of the present invention can monitor the environmental humidity of the workshop more finely during the manufacturing process. In addition, because the humidity sensor of the present invention has higher sensitivity, it can also provide the mobile phone device for future application development needs, thereby having a better application prospect.

The method of forming the humidity sensing layer 400 on the semiconductor layer 300 according to one or more embodiments of the present invention will be briefly described below. First, an amine-based structure is formed on the semiconductor layer 300. The method of forming an amine structure on the semiconductor layer 300 includes, but is not limited to, immersing the semiconductor layer 300 in an amide solution, and then subjecting the amide solution to photopolymerization with 500~1000W of UV light to form an amine structure On the surface of the semiconductor layer 300. The amide solution may be, for example, vinyl amide solution, acrylamide (AAm) solution, or butenamide solution, but is not limited thereto. As long as the amide solution that can form an amine structure on the surface of the semiconductor layer 300 by photopolymerization is included in the scope of the present invention.

In other embodiments of the present invention, the method 10 also includes immersing the semiconductor layer 300 in the amine solution, and then further immersing the semiconductor layer 300 in the amine solution, so that the amine structure has a greater number of amine groups. . The above-mentioned amine solution may be, for example, a polyethyleneimine (PEI) solution, but is not limited thereto. Any amine solution that can form more amine groups on the surface of the semiconductor layer 300 by dipping is included in the scope of the present invention.

Next, connect the linear or branched alkyl aldehyde structure to the amine group structure. The method of connecting the linear or branched alkyl aldehyde structure to the amino structure includes, but is not limited to, immersing the semiconductor layer 300 having an amino structure in a dibasic aldehyde solution, so that the dibasic aldehyde and the amino structure are The amine groups react to form a graft structure. The above-mentioned dihydric aldehyde has a linear or branched alkyl group in its structure. The aforementioned dibasic aldehydes include, but are not limited to, the dibasic aldehydes with a carbon number of C1~C20 linear or branched alkyl groups, such as malondialdehyde, succinaldehyde, and glutaraldehyde, GA) or adipaldehyde.

Next, connect a single strand of deoxyribonucleic acid to the linear or branched alkyl aldehyde structure. In some embodiments, the semiconductor layer 300 is then immersed in a solution containing a single strand of deoxyribonucleic acid, and allowed to stand overnight at room temperature, so that the NH ₂ functional group in the single strand of deoxyribonucleic acid is aligned with the linear chain. Or the -CHO functional group of the branched alkyl aldehyde structure reacts to form a -CH=N chemical bond, so that the single strand of deoxyribonucleic acid is chemically connected to the linear or branched alkyl structure.

Another aspect of the present invention provides a humidity sensor. As shown in FIG. 4, the humidity sensor 20 includes a substrate 100 and an electrode layer 200, a semiconductor layer 300, and a humidity sensing layer 400 sequentially disposed thereon. In one embodiment, the electrode layer 200 has an interdigitated structure (not shown). The materials of the substrate 100, the electrode layer 200, and the semiconductor layer 300 have been described above, and will not be repeated here.

(I)， 其中R為C1~C20的直鏈或支鏈烷基，X為一單股脫氧核醣核酸。在一或多個實施方式中，單股脫氧核醣核酸包含腺嘌呤、胸腺嘧啶、鳥嘌呤、胞嘧啶及其一組合。在一或多個實施方式中，本發明的濕度感測器20能夠量測的相對濕度值(relative humidity)範圍為0～100％，較佳為10～98％，更佳為35～95％。The humidity sensing layer 400 is located on the semiconductor layer 300. The humidity sensing layer 400 is composed of the structure of formula (I):

(I), where R is a C1-C20 linear or branched alkyl group, and X is a single strand of deoxyribonucleic acid. In one or more embodiments, the single-stranded deoxyribonucleic acid comprises adenine, thymine, guanine, cytosine, and a combination thereof. In one or more embodiments, the relative humidity value (relative humidity) that the humidity sensor 20 of the present invention can measure is 0-100%, preferably 10-98%, more preferably 35-95% .

It is worth noting that the single strand of deoxyribonucleic acid in the humidity sensing layer 400 can provide specific technical effects. Specifically, adenine, thymine, guanine, and cytosine in a single strand of deoxyribonucleic acid have certain water absorption capacity and high sensitivity. Therefore, the single strand of deoxyribonucleic acid in the humidity sensing layer 400 can be used as a probe for detecting moisture in the surrounding environment, and it can measure the environmental humidity more precisely, and the impedance value measured by the energy can reach 4%. More than orders of magnitude. Therefore, compared with the impedance value measured by the traditional humidity sensor, the change is usually only 2 to 3 orders of magnitude. The humidity sensor 20 of the present invention can monitor the environmental humidity of the workshop more finely during the manufacturing process. In addition, because the humidity sensor of the present invention has higher sensitivity, it can also provide the mobile phone device for future application development needs, thereby having a better application prospect.

In summary, the present invention provides a humidity sensor and a manufacturing method thereof. The method of the present invention includes adding a single strand of deoxyribonucleic acid to the humidity sensor. Since adenine, thymine, guanine, and cytosine in a single strand of deoxyribonucleic acid each have a certain water absorption capacity, they can be used as probes for detecting moisture in the surrounding environment. It is worth noting that the humidity sensor of the present invention uses a single strand of deoxyribonucleic acid as a probe for detecting moisture in the surrounding environment, so that it can measure the humidity of the environment more precisely, and has higher sensitivity and energy. The measured impedance value changes can reach more than 4 orders of magnitude. Compared with the change of the impedance value measured by the traditional humidity sensor is usually only 2 to 3 orders of magnitude, the humidity sensor of the present invention can monitor the environmental humidity of the workshop more finely during the manufacturing process. In addition, because the humidity sensor of the present invention has higher sensitivity, it can also provide the mobile phone device for future application development needs, thereby having a better application prospect.

Although the present invention has been disclosed in the above embodiments, it is not intended to limit the present invention. Anyone who is familiar with the art can make various changes and modifications without departing from the spirit and scope of the present invention. Therefore, the protection of the present invention The scope shall be subject to the definition of the attached patent application scope.

10: method S01~S03: steps 20: Humidity sensor 100: substrate 200: electrode layer 300: semiconductor layer 400: Humidity sensing layer

In order to make the above and other objectives, features, advantages and embodiments of the present invention more obvious and understandable, the detailed description of the attached drawings is as follows: Fig. 1 is a flowchart of a method of manufacturing a humidity sensor according to an embodiment of the present invention. 2 to 4 are schematic side views of various stages in a method of manufacturing a humidity sensor according to an embodiment of the present invention.

20: Humidity sensor

100: substrate

200: electrode layer

300: semiconductor layer

400: Humidity sensing layer

Claims (10)

A humidity sensor, comprising: a substrate; an electrode layer disposed on the substrate; a semiconductor layer on the electrode layer; and a humidity sensor layer on the semiconductor layer, wherein the humidity sensor layer It is composed of the structure of formula (I):

(I), where R is a C1-C20 linear or branched alkyl group, and X is a single strand of deoxyribonucleic acid. The humidity sensor according to claim 1, wherein the single strand of deoxyribonucleic acid comprises adenine, thymine, guanine, cytosine, and a combination thereof. The humidity sensor according to claim 1, wherein the semiconductor layer contains tin dioxide. The humidity sensor according to claim 1, wherein the electrode layer has an interdigitated structure. A method of manufacturing a humidity sensor includes the following steps: providing a substrate and an electrode layer, wherein the electrode layer is located on the substrate; forming a semiconductor layer on the electrode layer; and forming a humidity sensing layer on the semiconductor On the layer, the humidity sensing layer is composed of the structure of formula (I):

(I), where R is a C1-C20 linear or branched alkyl group, and X is a single strand of deoxyribonucleic acid. The method according to claim 5, wherein the step of forming the semiconductor layer on the electrode layer comprises: A plasma is deposited on the electrode layer, wherein the plasma is a mixture of tetramethyltin and oxygen. The method according to claim 5, wherein the step of forming the humidity sensing layer on the electrode layer includes the following sub-steps: forming an amine-based structure on the semiconductor layer; Linking the straight or branched chain alkyl aldehyde structure to the amine group structure; and Connect a single strand of deoxyribonucleic acid to the linear or branched alkyl aldehyde structure. The method according to claim 7, wherein the sub-step of forming the amino structure on the semiconductor layer comprises a photopolymerization reaction. The method according to claim 8, wherein after the photopolymerization reaction is performed, the sub-step of forming the amine-based structure on the semiconductor layer further comprises immersing the semiconductor layer in a polyethyleneimine solution. The method according to claim 5, wherein the single-stranded deoxyribonucleic acid comprises adenine, thymine, guanine, cytosine, and a combination thereof.

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