TW202108810A - Liquid material vaporizer - Google Patents
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- TW202108810A TW202108810A TW109126143A TW109126143A TW202108810A TW 202108810 A TW202108810 A TW 202108810A TW 109126143 A TW109126143 A TW 109126143A TW 109126143 A TW109126143 A TW 109126143A TW 202108810 A TW202108810 A TW 202108810A
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/448—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials
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本發明是有關於一種用於使液體材料氣化的液體材料氣化裝置。The present invention relates to a liquid material vaporization device for vaporizing liquid materials.
於半導體製造製程中,作為用於吸附於基板表面的製程氣體(process gas),有時使用使在常溫下為液體的液體材料氣化而成的材料氣體。例如在藉由原子層沈積(Atomic Layer Deposition,ALD)法於基板上形成原子單位的薄膜的情況下,作為液體材料,有如下液體材料,即以蒸氣壓低且黏性高的包含鍶(Sr)、鋇(Ba)、鑭(La)等元素的有機金屬液體材料為溶質,使所述溶質溶解於乙環己烷(ethyl cyclohexane,ECH)或四氫呋喃(tetrahydrofuran,THF)等溶媒中而成。又,近年來亦開始使用在常溫下以固體材料為溶質,並使所述溶質溶解於溶媒而成的液體材料。下文中,所謂液體材料,無關於常溫下的溶質的狀態的不同而使用,且有時將未包含溶質的材料亦統稱為液體材料。In a semiconductor manufacturing process, as a process gas for adsorption on the surface of a substrate, a material gas obtained by vaporizing a liquid material that is liquid at room temperature is sometimes used. For example, in the case of forming a thin film of atomic units on the substrate by the Atomic Layer Deposition (ALD) method, as the liquid material, there are the following liquid materials that contain strontium (Sr) with low vapor pressure and high viscosity The organic metal liquid materials of elements such as barium (Ba) and lanthanum (La) are solutes, which are made by dissolving the solute in solvents such as ethyl cyclohexane (ECH) or tetrahydrofuran (THF). In addition, in recent years, liquid materials in which a solid material is used as a solute at room temperature and the solute is dissolved in a solvent have also begun to be used. Hereinafter, the so-called liquid material is used regardless of the difference in the state of the solute at normal temperature, and materials that do not contain the solute are sometimes collectively referred to as liquid materials.
作為用於使液體材料氣化的裝置,有於儲存有液體材料的槽(tank)內藉由鼓泡(bubbling)等而使液體材料氣化的焙燒(baking)方式,以及對利用加熱器(heater)等而被保持為高溫的氣化室內噴霧液體材料而使液體材料瞬間氣化的瞬間氣化方式。As a device for vaporizing liquid materials, there are a baking method in which liquid materials are vaporized by bubbling in a tank in which liquid materials are stored, and the use of heaters ( It is an instantaneous vaporization method in which liquid materials are sprayed in a vaporization chamber that is kept at a high temperature, and the liquid materials are vaporized instantaneously.
於焙燒方式中,存在下述課題,即:當使如前文所述的固體材料溶解於溶媒而成的液體材料氣化時,蒸氣壓低的溶質會殘留於槽內,而液體材料容易濃縮。In the calcination method, there is a problem that when a liquid material obtained by dissolving a solid material in a solvent as described above is vaporized, a solute with a low vapor pressure remains in the tank, and the liquid material is easily concentrated.
另一方面,瞬間氣化方式的液體材料氣化裝置有內部混合方式(參照專利文獻1)及外部混合方式(參照專利文獻2),所述內部混合方式為使液體材料與載體氣體(carrier gas)預先進行混合後噴霧至氣化室內,所述外部混合方式為將液體材料與載體氣體在朝氣化室內供給時進行混合。On the other hand, the liquid material vaporization device of the instantaneous vaporization method has an internal mixing method (refer to Patent Document 1) and an external mixing method (refer to Patent Document 2). The internal mixing method is to combine the liquid material with a carrier gas (carrier gas). ) Pre-mixing and spraying into the gasification chamber, the external mixing method is to mix the liquid material and the carrier gas when they are supplied into the gasification chamber.
於瞬間氣化方式中,由於朝氣化室開口的液體材料的噴出口附近成為高溫,故有時於噴出口附近僅液體材料的溶媒蒸發,而殘留溶質。因此,有時液體材料的供給路徑堵塞,或於噴出口發生阻塞。In the instantaneous vaporization method, since the vicinity of the ejection port of the liquid material opening to the vaporization chamber becomes high temperature, only the solvent of the liquid material in the vicinity of the ejection port evaporates, and the solute may remain. Therefore, the supply path of the liquid material may be clogged, or the ejection port may be clogged.
為了解決此種問題,於專利文獻3中,提議一種將內部混合方式與外部混合方式加以組合的液體材料氣化裝置。所述液體材料氣化裝置包括:材料供給系統以及載體氣體供給系統,所述材料供給系統包括對氣化室內噴霧將液體材料與載體氣體預先混合而成的氣液混合體的材料噴射噴嘴(nozzle),所述載體氣體供給系統包括以通過材料噴射噴嘴的外側面的方式而形成的載體氣體的流路、以及以材料噴射噴嘴的前端開口為中心自其周圍對氣化室內噴射載體氣體的環狀載體氣體噴出口。即,可考量藉由利用載體氣體供給系統供給至材料噴射噴嘴周圍的載體氣體對材料噴射噴嘴加以冷卻、或利用載體氣體防止自氣化室朝材料噴射噴嘴傳熱,藉此可防止僅液體材料的溶媒蒸發。In order to solve this problem,
然而,即便為如上文所示的構成,特別是於使固體材料為溶質的液體材料氣化的情況下,亦有時無法充分抑制僅溶媒蒸發的現象。又,即便防止了溶媒的所謂先行蒸發現象,用於冷卻或絕熱的載體氣體的消耗量也會非常大。 [現有技術文獻] [專利文獻]However, even with the above-mentioned configuration, especially when a liquid material in which a solid material is a solute is vaporized, the phenomenon that only the solvent evaporates may not be sufficiently suppressed in some cases. In addition, even if the so-called pre-evaporation phenomenon of the solvent is prevented, the consumption of the carrier gas for cooling or heat insulation is very large. [Prior Art Literature] [Patent Literature]
[專利文獻1]日本專利特開2006-108230號公報 [專利文獻2]日本專利特開2007-46084號公報 [專利文獻3]日本專利5004890號公報[Patent Document 1] Japanese Patent Laid-Open No. 2006-108230 [Patent Document 2] Japanese Patent Laid-Open No. 2007-46084 [Patent Document 3] Japanese Patent No. 5004890
[發明所欲解決之課題] 本發明鑒於如上文所述的問題而完成,其目的在於提供一種可將液體材料以不於較氣化室更上游處氣化的方式充分冷卻,且可降低用於冷卻的媒體的消耗量的液體材料氣化裝置。 [解決課題之手段][The problem to be solved by the invention] The present invention was completed in view of the above-mentioned problems, and its object is to provide a method that can sufficiently cool liquid materials in a manner that does not vaporize more upstream than the vaporization chamber, and can reduce the consumption of the cooling medium. Liquid material vaporization device. [Means to solve the problem]
即,本發明的液體材料氣化裝置的特徵在於包括:氣化室、材料供給系統、以及冷卻系統,所述氣化室將液體材料予以加熱,而生成將液體材料氣化而成的材料氣體;所述材料供給系統包括:材料供給路徑,供液體材料與載體氣體混合而成的氣液混合體流動;及材料噴出口,將通過所述材料供給路徑的氣液混合體噴出至所述氣化室內,所述冷卻系統包括:冷卻流路,至少供將在所述材料供給路徑中流動的液體材料所含的成分予以溶解的溶媒流動,且以於所述材料供給路徑中將所述材料噴出口側加以冷卻的方式形成;以及溶媒噴出口,將通過所述冷卻流路的冷媒噴出至所述氣化室內。That is, the liquid material vaporization apparatus of the present invention is characterized by including: a vaporization chamber, a material supply system, and a cooling system. The vaporization chamber heats the liquid material to generate a material gas obtained by vaporizing the liquid material. The material supply system includes: a material supply path for a gas-liquid mixture of liquid material and carrier gas to flow; and a material ejection port for ejecting the gas-liquid mixture through the material supply path to the gas In the chemical chamber, the cooling system includes: a cooling flow path for flowing at least a solvent that dissolves the components contained in the liquid material flowing in the material supply path, and the material in the material supply path The spray port side is formed to be cooled; and the solvent spray port sprays the refrigerant passing through the cooling flow path into the vaporization chamber.
若為此種液體材料氣化裝置,則於所述冷卻流路中流動有溶媒,並且所述冷卻流路以於所述材料供給路徑中將所述材料噴出口側加以冷卻的方式形成,故在成為最高溫的所述材料噴出口附近使溶媒氣化,藉由其氣化潛熱而可充分進行冷卻。因此,可防止液體材料在較所述氣化室更上游側氣化,而可防止發生阻塞或流路堵塞等問題。In this type of liquid material vaporization device, a solvent flows in the cooling flow path, and the cooling flow path is formed to cool the material ejection port side in the material supply path, so The solvent is vaporized near the material ejection port which has the highest temperature, and the latent heat of vaporization allows sufficient cooling. Therefore, the liquid material can be prevented from vaporizing on the upstream side of the vaporization chamber, and problems such as clogging or clogging of the flow path can be prevented.
又,使於所述冷卻流路中流動的溶媒於所述材料噴出口附近蒸發,而能夠藉由氣化潛熱以精確標點(pinpoint)加以冷卻,故與僅利用載體氣體冷卻或絕熱的情況相比,可大幅度降低冷卻所需的媒體的消耗量。In addition, the solvent flowing in the cooling flow path evaporates near the material ejection port, and can be cooled with precise pinpoints by the latent heat of vaporization, which is comparable to the case of cooling or insulation using only carrier gas. Compared with this, the consumption of media required for cooling can be greatly reduced.
進而,由於在所述冷卻流路中蒸發的溶媒被供給至氣化室內,故可使氣化室內的液體材料的分壓降低,而可進一步幫助氣化。此外,由於液體材料所含的成分溶解於自所述溶媒噴出口噴出的溶媒,故即便於所述材料噴出口附近殘留有液體材料的一部分成分,亦可期待使此種成分溶解於經氣化的溶媒而將其去除的效果。Furthermore, since the solvent evaporated in the cooling flow path is supplied into the vaporization chamber, the partial pressure of the liquid material in the vaporization chamber can be reduced, and the vaporization can be further assisted. In addition, since the components contained in the liquid material are dissolved in the solvent ejected from the solvent ejection port, even if a part of the liquid material remains near the material ejection port, it can be expected to dissolve such components in the vaporized solvent. The solvent and the effect of removing it.
為了自所述冷卻系統噴出至所述氣化室的溶媒不會對材料氣體的供給目的地帶來影響,且容易地將殘留於所述材料噴出口的液體材料的溶質去除,而液體材料只要為固體材料溶解於溶媒而成的液體材料即可,且所述冷媒只要為所述溶媒即可。In order that the solvent ejected from the cooling system to the vaporization chamber does not affect the supply destination of the material gas and easily removes the solute of the liquid material remaining in the material ejection port, the liquid material only needs to be The solid material may be a liquid material obtained by dissolving in a solvent, and the refrigerant may be the solvent.
為了使於所述冷卻流路中流動的溶媒於所述材料噴出口附近更加容易蒸發,而提高由氣化潛熱實現的冷卻效果,且亦提高所述氣化室內的自所述溶媒噴出口噴出的溶媒對液體材料的氣化輔助效果,只要以下述方式構成即可:於所述冷卻流路中,流動有溶媒與載體氣體混合而成的氣液混合體,自所述材料噴出口噴出的氣液混合體、與自所述溶媒噴出口噴出的溶媒於所述氣化室內混合。In order to make it easier for the solvent flowing in the cooling flow path to evaporate near the material ejection port, the cooling effect achieved by the latent heat of vaporization is improved, and the ejection from the solvent ejection port in the vaporization chamber is also improved. The auxiliary effect of the solvent on the gasification of the liquid material can be constructed in the following manner: in the cooling flow path, a gas-liquid mixture of the solvent and the carrier gas flows, and the material is ejected from the material ejection port The gas-liquid mixture and the solvent ejected from the solvent ejection port are mixed in the vaporization chamber.
為了使液體材料在噴出至所述氣化室內後開始蒸發,且使在所述冷卻流路中流動的溶媒於所述冷卻流路內開始氣化而可藉由氣化潛熱將所述材料噴出口附近局部冷卻,只要所述材料供給路徑包括於所述材料噴出口附近流路面積縮小的第一噴嘴部,所述冷卻流路包括自所述溶媒噴出口朝上游側離開規定距離而設置且流路面積縮小後擴大的第二噴嘴部即可。In order to cause the liquid material to start to evaporate after being ejected into the vaporization chamber, and to cause the solvent flowing in the cooling flow path to start vaporizing in the cooling flow path, the material may be sprayed by latent heat of vaporization Local cooling in the vicinity of the outlet, as long as the material supply path includes a first nozzle portion with a reduced flow path area near the material ejection port, and the cooling flow path includes a predetermined distance from the solvent ejection port to the upstream side, and The second nozzle part that expands after the area of the flow path is reduced is sufficient.
作為所述第二噴嘴部的較佳的構成例,可舉出以藉由在所述第二噴嘴部的出口處蒸發的溶媒的氣化潛熱將所述第一噴嘴部加以冷卻的方式而構成。As a preferable configuration example of the second nozzle portion, there can be mentioned a configuration in which the first nozzle portion is cooled by the latent heat of vaporization of the solvent evaporated at the outlet of the second nozzle portion .
為了延長於所述冷卻流路內蒸發的冷媒滯留於所述材料噴出口附近的時間,而進一步提高冷卻效果,只要於所述第二噴嘴部的出口側,形成供已蒸發的溶媒滯留的滯留室即可。In order to prolong the time that the refrigerant evaporated in the cooling flow path stays near the material ejection port and further improve the cooling effect, it is only necessary to form a stagnation where the evaporated solvent stays on the outlet side of the second nozzle part. Room can be.
為了於所述氣化室內將自所述材料噴出口噴出的液體材料與自所述溶媒噴出口噴出的溶媒充分混合,使液體材料更加易於氣化,只要以下述方式構成即可,即:多個所述溶媒噴出口以所述材料噴出口為中心配置為圓狀,多個所述溶媒噴出口的各噴出方向,以所述材料噴出口的噴出方向為中心軸而呈螺旋狀。In order to fully mix the liquid material ejected from the material ejection port and the solvent ejected from the solvent ejection port in the vaporization chamber, so that the liquid material can be vaporized more easily, it is only necessary to configure it in the following manner, namely: more Each of the solvent ejection ports is arranged in a circular shape with the material ejection port as the center, and each ejection direction of the plurality of solvent ejection ports is spiral with the ejection direction of the material ejection port as the central axis.
為了於所述氣化室內將液體材料與載體氣體充分混合且噴霧至所述氣化室內的周邊部,而促進液體材料的氣化,只要為下述液體材料氣化裝置即可,即,包括:氣化室、材料供給系統、以及冷卻系統,所述氣化室將液體材料予以加熱,而生成將液體材料氣化而成的材料氣體,所述材料供給系統包括:材料供給路徑,供液體材料與載體氣體混合而成的氣液混合體流動;及材料噴出口,將通過所述材料供給路徑的所述氣液混合體噴出至所述氣化室內;所述冷卻系統包括:冷卻流路,供載體氣體流動,且以於所述材料供給路徑中將所述材料噴出口側藉由所述載體氣體冷卻的方式形成;及溶媒噴出口,將通過所述冷卻流路的載體氣體噴出至所述氣化室內,且以包圍所述溶媒噴出口的周圍的方式形成有一個或多個所述材料噴出口。 [發明的效果]In order to fully mix the liquid material and the carrier gas in the vaporization chamber and spray them to the periphery of the vaporization chamber to promote the vaporization of the liquid material, the following liquid material vaporization device may be used, that is, it includes : A gasification chamber, a material supply system, and a cooling system. The gasification chamber heats the liquid material to generate a material gas that vaporizes the liquid material. The material supply system includes: a material supply path for liquid A gas-liquid mixture formed by mixing a material and a carrier gas flows; and a material ejection port for ejecting the gas-liquid mixture through the material supply path into the gasification chamber; the cooling system includes: a cooling flow path , The carrier gas is provided to flow, and the material ejection port side is formed in the material supply path by the carrier gas cooling; and the solvent ejection port ejects the carrier gas passing through the cooling flow path to In the gasification chamber, one or more material ejection ports are formed so as to surround the solvent ejection port. [Effects of the invention]
若為如此般本發明的液體材料氣化裝置,由於液體狀態的所述冷媒以於供液體材料流動的所述材料供給路徑中將所述材料噴出口側加以冷卻的方式流動,故可藉由所述冷媒的氣化潛熱將所述材料噴出口附近以精確標點加以冷卻。因此,可防止液體材料於所述氣化室前蒸發,且亦可實現降低因局部的冷卻所致的所述冷媒的消耗量。In the liquid material vaporization device of the present invention in this way, since the refrigerant in a liquid state flows so as to cool the material ejection port side in the material supply path through which the liquid material flows, it is possible to use The latent heat of vaporization of the refrigerant cools the material near the ejection port with precise markings. Therefore, the liquid material can be prevented from evaporating in front of the vaporization chamber, and the consumption of the refrigerant due to local cooling can also be reduced.
參照圖1至圖4,對本發明的第一實施形態的液體材料氣化裝置100進行說明。1 to 4, the liquid
所述液體材料氣化裝置100是用於將液體材料氣化,而生成材料氣體的裝置。所生成的材料氣體用作例如為了對基板的表面進行各種處理而被供給的製程氣體。The liquid
成為氣化對象的液體材料為將作為溶質的固體材料溶解於溶媒(液體化原料)而成的液體材料,固體材料的蒸氣壓低於溶媒的蒸氣壓。因此,有時藉由溫度或壓力而僅溶媒先行蒸發,僅作為溶質的固體材料未氣化而殘留。The liquid material to be vaporized is a liquid material obtained by dissolving a solid material as a solute in a solvent (liquefied raw material), and the vapor pressure of the solid material is lower than the vapor pressure of the solvent. Therefore, sometimes only the solvent evaporates first due to temperature or pressure, and the solid material that is only the solute does not vaporize and remains.
具體而言,如圖1所示般,所述液體材料氣化裝置100包括:第一氣液混合機構1,將液體材料與載體氣體加以混合而生成氣液混合體;第二氣液混合機構2,將構成液體材料的一部分的溶媒與載體氣體加以混合而生成氣液混合體;以及氣化機構3,將液體材料予以加熱而生成材料氣體。Specifically, as shown in FIG. 1, the liquid
第一氣液混合機構1包括控制相對於載體氣體而供給的液體材料的流量的第一閥單元(valve unit)11。The first gas-
又,第二氣液混合機構2具有與第一氣液混合機構1同樣的構成,且包括控制相對於載體氣體而供給的溶媒的流量的第二閥單元21。於所述實施形態中供給至第一氣液混合機構1的載體氣體與供給至第二氣液混合機構2的載體氣體為相同種類的氣體,例如使用氮氣(N2
)等。又,供給至第二氣液混合機構的溶媒在後文所述的噴霧器4內用作用以防止液體材料蒸發的冷媒。此外,所述溶媒與構成供給至第一氣液混合機構1的液體材料的溶媒為相同種類。再者,若可將作為液體材料的溶質的固體材料予以溶解,則供給至第二氣液混合機構2的溶媒可與構成供給至第一氣液混合機構1的液體材料的溶媒為不同種類。In addition, the second gas-
氣化機構3包含配置於上游側的噴霧器4、以及配置於下游側的氣化器5。噴霧器4將自各氣液混合機構供給的氣液混合體噴霧至氣化器5內。氣化器5包括:形成於內部的氣化室52、以及以將氣化室52內保持為一定溫度的方式而構成的加熱器(heater)51。The
以下,參照圖2至圖4對噴霧器4的詳細情況進行說明。Hereinafter, the details of the
噴霧器4以下述方式構成:自基端側被供給各氣液混合體,且自面向氣化室52內的前端面對氣化室52內噴出液體材料等。所述噴霧器4呈大致圓筒形狀,於內部形成有供氣液混合體流動的流路或用於調節壓力的噴嘴部。即,噴霧器4包括:材料供給系統6,將液體材料供給至氣化室52內;以及冷卻系統7,供給用於防止在材料供給系統6中流動的液體材料蒸發的冷媒。於材料供給系統6及冷卻系統7中分別使氣液混合體同步地流動。The
如圖2及圖3所示般,材料供給系統6包括:1個材料導入口(port)61,於噴霧器4的基端側的端面開口,且自第一氣液混合機構1被供給包含液體材料與載體氣體的氣液混合體;材料噴出口62,於噴霧器4的前端側的端面將含有液體材料的氣液混合體噴出至氣化室52內;以及材料供給路徑63,是將材料導入口61與材料噴出口62之間加以連接的流路,且供氣液混合體流動。所述材料供給系統6於大致圓筒狀的噴霧器4中沿著中心軸而形成。As shown in Figs. 2 and 3, the
於材料供給路徑63中形成有於材料噴出口62的附近流路面積減少的第一噴嘴部64。第一噴嘴部64的出口與材料噴出口62一致。因此,通過第一噴嘴部64的氣液混合體一旦被擠壓後,在氣化室52內膨脹。In the
於所述實施形態中,冷卻系統7以下述方式方式構成:以包圍材料供給系統6的周圍的方式形成5個,且於噴霧器4中於面向氣化室52的前端側,材料供給系統6與冷卻系統7最接近。具體而言,如圖2及圖3所示般,冷卻系統7形成有:冷媒導入口71,自第二氣液混合機構2被供給包含溶媒與載體氣體的氣液混合體;溶媒噴出口72,將自冷媒導入口71導入的液體或氣體噴出至氣化室52內;以及冷卻流路73,將冷媒導入口71與溶媒噴出口72之間加以連接,且供被用作冷媒的氣液混合體流動。In the above embodiment, the
冷卻流路73以於材料供給路徑63中藉由冷媒將材料噴出口62側加以冷卻的方式形成。具體而言,冷卻流路73於噴霧器4的基端側與材料供給路徑63並行地設置,但在噴霧器4的前端側以朝材料噴出口62側靠近的方式相對於噴霧器4的軸方向傾斜地彎曲。又,冷卻流路73包括設置於自溶媒噴出口72朝上游側離開規定距離的位置的第二噴嘴部74。所述第二噴嘴部74以流路面積縮小後擴大的方式構成,且相對於噴霧器4的軸方向的位置配置為與第一噴嘴部64大致相同的位置。The
由於如此般構成,故氣液混合體所含的溶媒於冷卻流路73的基端側為液體狀態,但於冷媒的供給路徑的前端側於已通過第二噴嘴部74的時點而蒸發。因此,第一噴嘴部64及材料噴出口62的附近藉由在冷卻流路73中流動的溶媒的氣化潛熱而以精確標點被冷卻。With such a configuration, the solvent contained in the gas-liquid mixture is in a liquid state on the base end side of the
接著,參照圖4對材料噴出口62與溶媒噴出口72的配置關係進行說明。如圖4所示般,噴霧器4的前端面中央部凹陷為擂缽狀,於最內部開口有材料噴出口62。又,5個溶媒噴出口72於以材料噴出口62為中心的圓周上排列而配置。5個溶媒噴出口72以下述方式形成:朝擂缽的斜面開口,且冷媒的各噴出方向以材料噴出口62的噴出方向為中心軸成為螺旋狀。Next, the arrangement relationship between the
若為如此般構成的液體材料氣化裝置100,則對於面向藉由加熱器51而加熱的氣化室52內的噴霧器4的前端側、特別是材料噴出口62的附近,使於冷卻流路73中流動的液體狀態的溶媒氣化,而藉由其氣化潛熱進行局部冷卻。According to the liquid
因此,可防止於材料噴出口62的附近於材料供給路徑63中流動的液體材料中僅溶媒蒸發,而作為溶質的固體材料殘留的情況。Therefore, in the liquid material flowing in the
即便在構成液體材料的溶媒中產生稍許氣化,於材料噴出口62的附近殘留有固體材料,由於經氣化的溶媒自溶媒噴出口72供給至材料噴出口62的附近,故亦可使殘留的固體材料再次溶解。因此,一面進行材料氣體的供給,一面可並行地進行材料噴出口62附近的殘留物質的去除。又,亦可藉由自溶媒噴出口72供給至氣化室52內的氣體化的溶媒,使氣化室52內的固體材料的分壓降低。因此,可促進氣化室52內的固體材料的氣化。Even if a slight vaporization occurs in the solvent constituting the liquid material, solid material remains near the
進而,由於實現了利用氣化潛熱的精確標點的冷卻,故與例如在冷卻流路73中僅流動載體氣體而將材料噴出口62的附近加以冷卻的情況相比,亦可大幅度降低冷卻所需的冷媒的量。此外,由於在冷卻流路73中以溶媒與載體氣體混合而成的氣液混合體的狀態流動,故使溶媒於冷卻流路73的前端側更加易於氣化,而可提高冷卻效率。又,與僅使溶媒在冷卻流路73中流動的情況相比,亦可降低必要的供給壓。Furthermore, since accurate punctuation cooling using the latent heat of vaporization is realized, it is possible to greatly reduce the cooling cost compared to the case where, for example, only the carrier gas flows in the
此外,第一實施形態的液體材料氣化裝置100,藉由材料供給系統6而實現朝氣化室52內的內部混合方式的液體材料噴霧,且藉由供給經各冷卻系統7氣化的溶媒或載體氣體亦實現外部混合方式的噴霧。藉由如此般實現內部混合方式與外部混合方式的併合(hybrid)型噴霧,而可實現適合於液體材料所含的固體材料的氣化的噴霧狀態。In addition, the liquid
接著,參照圖5及圖6對本發明中第二實施形態的液體材料氣化裝置100進行說明。再者,對於與第一實施形態中所說明的構件相對應的構件,標註相同的符號。Next, the liquid
如圖5及圖6所示般,第二實施形態的液體材料氣化裝置100的冷卻流路73的構成與第一實施形態不同。具體而言,冷卻流路73的第二噴嘴部74的位置配置於更上游側,且於第二噴嘴部74的出口形成有供經氣化的冷媒暫時滯留的滯留室75。滯留室75為呈大致長方體狀的空間,以於冷卻流路73中流路面積成為最大的方式形成。又,相對於滯留室75的流入側及流出側的壁面而流出口及流入口的面積較小地形成。As shown in FIGS. 5 and 6, the configuration of the cooling
若為此種液體材料氣化裝置,則可使通過第二噴嘴部74而氣化的溶媒在材料噴出口62的附近滯留規定時間,故可進一步提高冷卻效果。According to such a liquid material vaporization device, the solvent vaporized by the
接著,參照圖7對第三實施形態進行說明。Next, the third embodiment will be described with reference to FIG. 7.
第三實施形態與前文所述的各實施形態相比,材料供給路徑63與冷卻流路73的位置關係為相反。即,沿著噴霧器4的中心軸而延伸的流路成為冷卻流路73,設置於冷卻流路73周圍的多個流路成為材料供給路徑63。進而,以包圍形成於噴霧器4的前端面中央部的溶媒噴出口72的周圍的方式形成有材料噴出口62。In the third embodiment, the positional relationship between the
又,於第三實施形態中,於冷卻流路73內不流動液體,而僅將載體氣體作為冷媒而流動。另一方面,於材料供給路徑63中,流動混合有將固體材料溶解於溶媒而成的液體材料與載體氣體的氣液混合體。In addition, in the third embodiment, no liquid flows in the
若為如此般構成的液體材料氣化裝置100,則可實現組合了內部混合與外部混合的併合混合,且可於氣化室52內將液體材料以與載體氣體充分混合的狀態噴霧至氣化室52內的周邊部。因此,可促進液體材料的氣化。If the liquid
對其他實施形態進行說明。Other embodiments will be described.
冷卻流路並不限於供氣液混合體流動的流路,例如可為僅供液體狀態的冷媒流動的流路。又,冷媒並不限於構成在材料供給路徑中流動的液體材料的溶媒,亦可為其他種類的液體。於此種情形下,只要具有可溶解構成液體材料的溶質的性質即可。又,於第三實施形態中,於冷卻流路內不僅流動載體氣體,亦可流動作為冷媒而發揮作用的溶媒等液體。The cooling flow path is not limited to the flow path through which the gas-liquid mixture flows, and may be, for example, a flow path through which only liquid refrigerant flows. In addition, the refrigerant is not limited to the solvent constituting the liquid material flowing in the material supply path, and may be another type of liquid. In this case, as long as it has the property of dissolving the solute constituting the liquid material. In addition, in the third embodiment, not only the carrier gas but also a liquid such as a solvent that functions as a refrigerant may flow in the cooling flow path.
關於液體材料,亦並不限於溶質為固體材料,液體材料亦可為將作為例如有機金屬液體材料等的溶質溶解於溶媒而成者。Regarding the liquid material, it is not limited to the solute being a solid material, and the liquid material may be one obtained by dissolving a solute, such as an organometallic liquid material, in a solvent.
於第一實施形態及第二實施形態中,示出了針對材料供給系統而設置有多個冷卻系統的情況,但亦可針對1個材料供給系統僅設置1個冷卻系統。又,即便於存在多個冷卻系統的情況下,亦可設為最終溶媒噴出口匯流。於此種情形下,溶媒噴出口可以包圍材料噴出口的周圍的方式形成為環狀。In the first embodiment and the second embodiment, the case where a plurality of cooling systems are provided for the material supply system is shown, but only one cooling system may be provided for one material supply system. In addition, even in the case where there are a plurality of cooling systems, it can also be set as the final confluence of the solvent ejection ports. In this case, the solvent ejection port may be formed in a ring shape so as to surround the material ejection port.
關於材料噴出口及溶媒噴出口的噴出方向並不限於各實施形態所示出的方向。例如亦可將材料噴出口的噴出方向與溶媒噴出口的噴出方向設為分別並行。The ejection direction of the material ejection port and the solvent ejection port is not limited to the directions shown in each embodiment. For example, the ejection direction of the material ejection port and the ejection direction of the solvent ejection port may be respectively parallel.
載體氣體與載體氣體並不限於相同種類的氣體,亦可為分別不同種類的氣體。The carrier gas and the carrier gas are not limited to the same type of gas, and may be different types of gas.
另外,不違反本發明的主旨下亦可將各實施形態的一部分彼此加以組合,或將一部分進行變形。In addition, a part of each embodiment may be combined or a part may be modified without violating the gist of the present invention.
1:第一氣液混合機構 2:第二氣液混合機構 3:氣化機構 4:噴霧器 5:氣化器 6:材料供給系統 7:冷卻系統 11:第一閥單元 21:第二閥單元 51:加熱器 52:氣化室 100:液體材料氣化裝置 61:材料導入口 62:材料噴出口 63:材料供給路徑 64:第一噴嘴部 71:冷媒導入口 72:溶媒噴出口 73:冷卻流路 74:第二噴嘴部 75:滯留室1: The first gas-liquid mixing mechanism 2: The second gas-liquid mixing mechanism 3: Gasification mechanism 4: sprayer 5: Vaporizer 6: Material supply system 7: Cooling system 11: The first valve unit 21: The second valve unit 51: heater 52: Vaporization chamber 100: Liquid material vaporization device 61: Material inlet 62: Material ejection outlet 63: Material supply path 64: The first nozzle part 71: Refrigerant inlet 72: Solvent spray outlet 73: Cooling flow path 74: The second nozzle part 75: Detention Room
圖1是本發明的第一實施形態的液體材料氣化裝置的示意圖。 圖2是表示第一實施形態的噴霧器的構造的示意性剖視圖。 圖3是表示第一實施形態的噴霧器的構造的示意性剖面立體圖。 圖4是將第一實施形態的噴霧器的噴出口附近加以放大的示意性局部立體圖。 圖5是表示第二實施形態的噴霧器的構造的示意性剖視圖。 圖6是表示第二實施形態的噴霧器的構造的示意性剖面立體圖。 圖7是表示第三實施形態的噴霧器的構造的示意性剖視圖。Fig. 1 is a schematic diagram of a liquid material vaporization apparatus according to a first embodiment of the present invention. Fig. 2 is a schematic cross-sectional view showing the structure of the sprayer of the first embodiment. Fig. 3 is a schematic cross-sectional perspective view showing the structure of the sprayer of the first embodiment. Fig. 4 is an enlarged schematic partial perspective view of the vicinity of the ejection port of the sprayer of the first embodiment. Fig. 5 is a schematic cross-sectional view showing the structure of the sprayer of the second embodiment. Fig. 6 is a schematic cross-sectional perspective view showing the structure of the sprayer of the second embodiment. Fig. 7 is a schematic cross-sectional view showing the structure of the sprayer of the third embodiment.
1:第一氣液混合機構 1: The first gas-liquid mixing mechanism
2:第二氣液混合機構 2: The second gas-liquid mixing mechanism
3:氣化機構 3: Gasification mechanism
4:噴霧器 4: sprayer
5:氣化器 5: Vaporizer
6:材料供給系統 6: Material supply system
7:冷卻系統 7: Cooling system
11:第一閥單元 11: The first valve unit
21:第二閥單元 21: The second valve unit
51:加熱器 51: heater
52:氣化室 52: Vaporization chamber
100:液體材料氣化裝置 100: Liquid material vaporization device
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