TW202108278A - Laser machining method, semiconductor member production method, and semiconductor object - Google Patents

Abstract

A laser machining method that comprises a first step in which laser light is shined into a semiconductor object from the surface of the semiconductor object to form a modified region inside the semiconductor object along a virtual plane that faces the surface of the semiconductor object, the modified region including: a plurality of modified spots; a plurality of fissures that respectively extend from the plurality of modified spots; and gas. During the first step, a peripheral region that does not have modified spots formed therein and that blocks the advancement of the fissures from the modified region toward the outer surface of the semiconductor object is provided to the semiconductor object so as to surround the modified region.

Description

Laser processing method, semiconductor component manufacturing method, and semiconductor object

One aspect of the present invention relates to a laser processing method, a semiconductor component manufacturing method, and a semiconductor object.

The following general processing method is known: that is, a semiconductor object such as a semiconductor ingot is irradiated with laser light to form a modified region inside the semiconductor object, and then the semiconductor is removed from the semiconductor object along the modified region. The target object is to cut out a semiconductor member such as a semiconductor wafer (for example, refer to Patent Documents 1 and 2). [Prior Technical Literature] [Patent Literature]

[Patent Document 1] JP 2017-183600 A [Patent Document 2] JP 2017-057103 A

[The problem to be solved by the invention]

In the above-mentioned general processing method, the formation method of the modified region will greatly affect the state of the obtained semiconductor component.

One aspect of the present invention is to provide a laser processing method, a semiconductor component manufacturing method, and a semiconductor object capable of obtaining a suitable semiconductor component. [Means to solve the problem]

One aspect of the laser processing method of the present invention is provided with: the first step is to inject laser light into the semiconductor object from the surface of the semiconductor object, and the semiconductor object is inside, Along the virtual surface opposite to the surface, a modified region including a plurality of modified points and a plurality of cracks and gas extending from the plurality of modified points is formed. In the first step, it is a semiconductor object At this point, a peripheral area that is not formed with modified spots and which hinders the progress of cracks from the modified area toward the outside of the semiconductor object is made to surround the modified area. Set up.

In this laser processing method, in the first step, it is possible to prevent cracks from progressing from the modified region to the outside of the semiconductor object by the peripheral region, and it is possible to suppress inclusion in the modified region The gas escapes to the outside through the cracks. Therefore, the gas pressure (internal pressure) can be effectively raised and maintained. As a result, the internal pressure can be used to easily form a crack covering the virtual surface. By obtaining a semiconductor component from a semiconductor object with a crack covering the virtual surface as a boundary, it becomes possible to obtain a suitable semiconductor component.

In the laser processing method of one of the side surfaces of the present invention, the system may also be configured such that the peripheral area, when viewed from the direction opposite to the surface, presents a frame shape surrounding the modified area. By forming such a peripheral region, it is possible to effectively prevent the progress of cracks toward the outer surface of the semiconductor object.

In the laser processing method of one aspect of the present invention, the material of the semiconductor object may include nitride. In this case, in the first step, by injecting laser light into the semiconductor object, the semiconductor object can be decomposed and nitrogen gas can be generated.

The laser processing method of one of the sides of the present invention may also be provided with a process of forming a hole in the peripheral area to allow gas to escape to the outside. According to this, when a deformation is applied to the semiconductor object due to the increase in the pressure of the gas, it becomes possible to allow the gas to escape to the outside and suppress the deformation.

The manufacturing method of a semiconductor component of one side of the present invention is a manufacturing method including the above-mentioned laser processing method, and is characterized in that it has: the second process is a crack covering a virtual surface as a boundary, and Obtain semiconductor components from semiconductor objects.

In this method of manufacturing a semiconductor component, as well, since the above-mentioned laser processing method is included, it is possible to prevent the gas contained in the modified region from escaping to the outside through the cracks, thereby enabling The gas pressure (internal pressure) is effectively raised and maintained. Therefore, the internal pressure can be used to easily form a crack covering the virtual surface. By obtaining a semiconductor component from a semiconductor object with a crack covering the virtual surface as a boundary, it becomes possible to obtain a suitable semiconductor component.

In the method for manufacturing a semiconductor component of one side of the present invention, it can also be configured as: the virtual surface is arranged side by side in the direction opposite to the surface, and is set with plural, modified regions and peripheral regions , Is provided with plural numbers corresponding to each of the plural virtual surfaces. The peripheral area is for cracks from the enclosed modified area toward other modified areas adjacent to the modified area Progress is hindered. According to this, a plurality of semiconductor members can be obtained from one semiconductor object. In addition, since the peripheral area hinders the progress of cracks from the modified area to other modified areas, it is possible to suppress the escape of gas from the modified area to other modified areas. In this case, the pressure of the gas can be effectively increased and maintained.

In the method for manufacturing a semiconductor member of one aspect of the present invention, the semiconductor object may be a semiconductor ingot, and the semiconductor member may be a semiconductor wafer. According to this, it becomes possible to obtain plural semiconductor wafers from one semiconductor ingot.

In the method for manufacturing a semiconductor component of one side of the present invention, it can also be configured as: the virtual surface is arranged side by side in the direction in which the surface extends, and is set with plural, modified regions and peripheral regions , Is provided with plural numbers corresponding to each of the plural virtual surfaces. The peripheral area is for cracks from the enclosed modified area toward other modified areas adjacent to the modified area Progress is hindered. According to this, a plurality of semiconductor members can be obtained from one semiconductor object. In addition, since the peripheral area hinders the progress of cracks from the modified area to other modified areas, it is possible to suppress the escape of gas from the modified area to other modified areas. In this case, the pressure of the gas can be effectively increased and maintained.

In the method for manufacturing a semiconductor member of one aspect of the present invention, the semiconductor object may be a semiconductor wafer, the semiconductor member may be a semiconductor device. According to this, it is possible to obtain a plurality of semiconductor devices from one semiconductor wafer.

In the method for manufacturing a semiconductor member of one side of the present invention, it may be configured to include: after the first step, the semiconductor object is heated to expand the gas and cause the crack to follow the virtual surface. Project in progress. In this case, it is possible to reliably form a crack covering the virtual surface.

In the method for manufacturing a semiconductor member in one of the aspects of the present invention, it may be configured such that in the second step, a part of the semiconductor object is placed along the virtual surface by applying a stimulus to the modified region from the outside. And for peeling. According to this, it is possible to release a part of the semiconductor object by using the released force while releasing the pressure of the gas in the modified region.

In the method of manufacturing a semiconductor member in one of the aspects of the present invention, it may be configured such that in the second step, a part of the semiconductor object is removed along the virtual surface by removing the peripheral region from the semiconductor object. And for peeling. According to this, it is possible to release a part of the semiconductor object by using the released force while releasing the pressure of the gas in the modified region.

The semiconductor object on one side of the present invention is a semiconductor object with a surface, and is characterized in that it has: a modified region located inside the semiconductor object and along a virtual surface facing the surface It is formed; and the peripheral area is set up to surround the modified area. The modified area includes a plurality of modified points and a plurality of cracks and gases extending from the plural modified points, respectively. The surrounding area is an area where no modified spots are formed, and it prevents the progress of cracks from the enclosed modified area toward the outside of the semiconductor object.

In the semiconductor object on one side of the present invention, the progress of cracks from the modified area toward the outside of the semiconductor object is hindered by the peripheral area, and the gas contained in the modified area is caused by the cracks. Suppress the escape to the outside. Therefore, the gas pressure (internal pressure) can be effectively raised and maintained. It is possible to use the internal pressure to advance the crack along the virtual surface with good accuracy. Therefore, it becomes possible to obtain a suitable semiconductor member by obtaining a semiconductor member from a semiconductor object with a crack covering the virtual surface as a boundary.

The semiconductor object on one of the sides of the present invention may also be configured as: it is a semiconductor ingot, and the modified regions are arranged side by side in the direction opposite to the surface, and are provided with a plurality of peripheral edges A region is provided with plural modified regions corresponding to each of the plurality of modified regions. The peripheral region is for the tortoises that start from the enclosed modified region toward other modified regions adjacent to the modified region. The progress of the crack is hindered. According to this, it becomes possible to obtain plural semiconductor wafers from one semiconductor ingot. Since the peripheral area hinders the progress of cracks from the modified area to other modified areas, it is possible to prevent gas from escaping from the modified area to other modified areas. , And become able to effectively increase and maintain the pressure of the gas.

The semiconductor object on one side of the present invention can also be configured as a semiconductor wafer, the modified region is arranged side by side in the direction in which the surface extends, and is provided with a plurality of peripheral edges The area is provided with plural numbers corresponding to each of the plural virtual surfaces. The peripheral area is for cracks from the enclosed modified area toward other modified areas adjacent to the modified area The progress is hindered. According to this, it is possible to obtain a plurality of semiconductor devices from one semiconductor wafer. Since the peripheral area hinders the progress of cracks from the modified area to other modified areas, it is possible to prevent gas from escaping from the modified area to other modified areas. , And become able to effectively increase and maintain the pressure of the gas. [Effects of Invention]

According to one of the aspects of the present invention, it is possible to provide a laser processing method, a semiconductor component manufacturing method, and a semiconductor object capable of obtaining a suitable semiconductor component.

Hereinafter, referring to the drawings and detailed description of the embodiment. In addition, in each figure, the same reference numerals are attached to the same or corresponding parts, and the repeated description is omitted. [Constitution of laser processing device]

As shown in FIG. 1, the laser processing apparatus 1 includes a platform 2, a light source 3, a spatial light modulator 4, a condenser lens 5, and a control unit 6. The laser processing device 1 is a device that forms a modified region 12 on the target 11 by irradiating the laser light L on the target 11. Hereinafter, the first horizontal direction is referred to as the X direction, and the second horizontal direction perpendicular to the first horizontal direction is referred to as the Y direction. In addition, the vertical direction is referred to as the Z direction.

The platform 2 supports the object 11 by sucking a film attached to the object 11, for example. In this embodiment, the platform 2 is movable in each of the X direction and the Y direction. In addition, the platform 2 can be rotated about an axis parallel to the Z direction as a center line.

The light source 3 outputs laser light L that is transmissive with respect to the object 11 by, for example, a pulse oscillation method. The spatial light modulator 4 modulates the laser light L output from the light source 3. The spatial light modulator 4 is, for example, a reflective liquid crystal (LCOS: Liquid Crystal on Silicon) spatial light modulator (SLM: Spatial Light Modulator). The collecting lens 5 collects the laser light L modulated by the spatial light modulator 4. In this embodiment, the spatial light modulator 4 and the condenser lens 5 are capable of moving in the Z direction as a laser irradiation unit.

If the laser light L is collected inside the object 11 supported on the platform 2, the laser light L is particularly absorbed at the portion corresponding to the light collection point C of the laser light L, and the object 11 The inner part of 11 is formed with a modified region 12. The modified region 12 refers to a region that is different from the surrounding non-modified region in terms of density, refractive index, mechanical strength, or other physical properties. As the modified region 12, there are, for example, a molten processed region, a fractured region, an insulation failure region, a refractive index change region, and the like.

As an example, if the platform 2 is moved in the X direction, and the light collection point C is moved relative to the object 11 in the X direction, the plurality of modified spots 13 are aligned along the X direction to form one. Columns are formed. One modified spot 13 is formed by irradiating one pulse of laser light L. The modified region 12 in one row is a collection of modified spots 13 arranged in one row. Adjacent modified spots 13 depend on the relative moving speed of the light collection spot C to the object 11 and the repetitive frequency of the laser light L, and may be connected or separated from each other.

The control unit 6 controls the platform 2, the light source 3, the spatial light modulator 4 and the light collecting lens 5. The control unit 6 is configured as a computer device including a processor, a memory, a storage device, and a communication device. In the control unit 6, the software (program) read into the memory, etc., is executed by the processor, and for the reading and writing of data in the memory and the storage device, and the communication device The resulting communication is controlled by the processor. With this, the control unit 6 realizes various functions. [Laser processing method and semiconductor component manufacturing method of the first embodiment]

The object 11 of the laser processing method and the semiconductor component manufacturing method of the first embodiment is as shown in FIGS. 2 and 3, and is formed of gallium nitride (GaN), for example, into a rectangular plate shape. GaN ingot (semiconductor ingot, semiconductor object) 20. As an example, the width of the GaN ingot 20 is 30 mm in length and 30 mm in width, and the thickness of the GaN ingot 20 is 2 mm. The laser processing method and the semiconductor component manufacturing method of the first embodiment are implemented in order to cut out a plurality of GaN wafers (semiconductor wafers, semiconductor components) 30 from the GaN ingot 20. As an example, the width of the GaN wafer 30 is 10 mm in length and 10 mm in width, and the thickness of the GaN wafer 30 is 100 μm. The shapes of the GaN ingot 20 and the GaN wafer 30 are not particularly limited. For example, they may have a circular plate shape.

First, a laser processing process (first process) using the above-mentioned laser processing device 1 is implemented. In the laser processing process, the above-mentioned laser processing device 1 is used to form the modified region 12 along each of the plurality of virtual surfaces 15. Each of the plurality of imaginary surfaces 15 is a surface inside the GaN ingot 20 that faces the surface 20a of the GaN ingot 20, and is arranged side by side in the direction opposite to the surface 20a. set up. In the present embodiment, each of the plurality of virtual surfaces 15 is a surface parallel to the surface 20a, and has a rectangular shape, for example. Each of the plural virtual surfaces 15 is set so as to overlap each other when viewed from the surface 20a side. The GaN ingot 20 is provided with a plurality of peripheral regions 16 so as to surround each of the plurality of virtual surfaces 15. That is, each of the plural virtual surfaces 15 does not reach the side surface 20b of the GaN ingot 20. As an example, the distance between adjacent virtual surfaces 15 is 100 μm, and the width of the peripheral region 16 (in this embodiment, it is the distance between the outer edge of the virtual surface 15 and the side surface 20b), which is It is 30μm or more. The region surrounded by the peripheral region 16 in the GaN ingot 20 is a processing target region R that is a target for forming the modified region 12. The processing target region R includes the virtual surface 15. The details of the peripheral region 16 will be described later.

The formation of the modified region 12 is carried out one by one for each virtual surface 15 from the side opposite to the surface 20a by irradiation with laser light L having a wavelength of 532 nm, for example. The modified area 12 is provided with plural numbers corresponding to each of the plural virtual surfaces 15. The formation of the modified region 12 is the same at each of the plurality of virtual planes 15. Therefore, the following describes the formation of the modified region 12 along the virtual plane 15 closest to the surface 20a in detail. . Hereinafter, the modified points 13a, 13b, 13c, and 13d described later may be collectively referred to as modified point 13, and the cracks 14a, 14b, 14c, and 14d described later may be collectively referred to as crack 14.

As shown in FIG. 4, the laser processing device 1 makes the laser light L enter the GaN ingot 20 from the surface 20a, and makes the condensing point C of the laser light L along the virtual surface 15 To move in the X direction and the Y direction. As a result, the modified region 12 is formed along the virtual plane 15 in the processing target region R surrounded by the peripheral region 16 in the GaN ingot 20.

The modified area 12 includes a plurality of modified spots 13a side by side in the X direction and Y direction, and a plurality of cracks 14b extending from the plurality of modified spots 13b, and irradiated by laser light L The nitrogen (gas) G generated by the decomposition (chemical change) of the GaN ingot 20 and the gallium (precipitates) precipitated by the decomposition of the GaN ingot 20 by the irradiation of the laser light L. The plural modified points 13a are arranged on the virtual surface 15 in a matrix shape. The plural cracks 14b contain micro-cracks. The plurality of cracks 14b may be connected to each other or not connected to each other. Nitrogen G is produced in the multiple cracks 14. Nitrogen gas G is generated in a dispersed manner at one or a plurality of locations in the modified region 12 (processing target region R). In addition, in the figure, the modified point 13a is marked with black four corners, and the extent of the crack 14a is marked with a dashed line (the same in FIGS. 5 and 6)

In the present embodiment, in the formation of the modified region 12, the modified region 12 is not formed with modified dots 13a, and the modified region 12 faces the outer surface of the GaN ingot 20 (surface 20a, The peripheral region 16 obstructing the progress of the crack 14b on the other surface 20c on the side opposite to the surface 20a and the side surface 20b) is provided in the GaN ingot 20 so as to surround the modified region 12. When viewed from the Z direction (the direction opposite to the surface 20a), the peripheral area 16 has a frame shape surrounding the modified area 12. The peripheral area 16 is provided with plural numbers corresponding to each of the plural virtual surfaces 15. The peripheral region 16 further hinders the progress of the cracks 14b from the enclosed modified region 12 toward other modified regions 12 adjacent to the modified region 12. The so-called hindering the progress of the crack 14b is not limited to completely preventing the progress of the crack 14b, but can be "to prevent the crack 14b from reaching the outer surface of the GaN ingot 20 as much as possible" and "to cause the crack 14b to reach the outer surface of the GaN ingot 20". 14b becomes at least one of "will not progress" and "obstruct the progress of crack 14b".

In the formation of the modified region 12, it is also possible to implement ON and OFF irradiation (high-precision laser ON/OFF) for switching ON and OFF of the laser light L for the processing target region R and the peripheral region 16 OFF control) to set the peripheral area 16. That is, the system may also be configured such that when the light collection point C is located at the peripheral area 16, the laser light L is turned off, and when the light collection point C is located more inside than the peripheral area 16 (processing object In the area R), set the irradiation of the laser light L to ON.

This may be replaced or furthermore, in the formation of the modified region 12, the processing conditions of the laser light L are set so that the crack 14b does not progress from the modified region 12 to the GaN ingot 20 The peripheral area 16 is set based on the conditions at the outer surface and/or other modified areas 12. The processing conditions for setting the peripheral region 16 can be set based on known techniques. The processing conditions for setting the peripheral area 16 include the setting conditions of the energy of the laser light L and the pulse pitch. For example, in the processing conditions for setting the peripheral region 16, the energy of the laser light L is set to be smaller than a specific energy, and the pulse pitch is set to be longer than a specific length. Alternatively, in the formation of the modified region 12, the portion other than the processing target region R of the GaN ingot 20 can be covered by a mask that generally hinders the injection of the laser. Peripheral area 16.

It is also possible to replace at least one of these, or furthermore, in the formation of the modified region 12, by using the bevel portion (also known as the bevel) existing at the outer edge of the surface 20a of the GaN ingot 20 As an inclined portion or a tapered portion) to suppress the concentration of the laser light L, a peripheral area 16 is provided.

Next, a heating process of heating the GaN ingot 20 using a heating device equipped with a heater or the like is performed. The heating device may also include a heating plate, a device for performing additional laser processing, a heater, a heating furnace, a LD (Laser Diode) heater, a device for heating by a light source such as a laser device, and At least one of a device for heating by ultrasonic waves, a device for heating by shock waves, and a device for heating by electromagnetic waves.

Here, at the GaN ingot 20, the modified region 12 contains nitrogen gas G. Therefore, in the heating process, by heating the GaN ingot 20, as shown in FIGS. 5-7, the nitrogen gas G is expanded and the pressure (internal pressure) of the nitrogen gas G is induced to increase. By this, the nitrogen gas G is connected and diffused in the entire area of the virtual surface 15 (the processing target area R). Using the pressure of nitrogen gas G, at the virtual surface 15, a plurality of cracks 14 extending from the plurality of modified points 13 are connected to each other. A plurality of cracks 14 are advanced along the virtual surface 15 and a crack 17 covering the size of the virtual surface 15 is formed (hereinafter, simply referred to as "crack 17").

As shown in FIG. 8, since the virtual surface 15 is set with a plural number, a crack 17 is formed at each of the plural virtual surfaces 15 in the heating process. In FIG. 8, the range where the plurality of modified points 13, the plurality of cracks 14 and the cracks 17 are formed are marked by dashed lines. There may be cases where the molten precipitate enters the crack 17. Cracks 14 and 17 are also referred to as voids in the following series.

In the heating process, by the peripheral area 16, the progress of the plural cracks 14 (cracks 17) is hindered. Therefore, it is possible to prevent the generated nitrogen gas G from escaping to the outside of the virtual surface 15 . The width of the peripheral region 16 can be 30 μm or more. In addition, it is also possible to apply some force to the GaN ingot 20 by a method other than heating to connect the plurality of cracks 14 to each other and form the cracks 17. In addition, it is also possible to form a plurality of modified points 13 along the virtual surface 15 to connect the plurality of cracks 14 to each other and form a crack 17.

9(a) to 9(d) are photographs showing the processing target region R when the GaN ingot 20 in which the modified region 12 is formed is heated. In the example of Fig. 9(a), the heating temperature is 40°C, in the example of Fig. 9(b), the heating temperature is 85°C, and in the example of Fig. 9(c), the heating temperature is 165°C In the example of Fig. 9(d), the heating temperature is 350°C. As shown in FIG. 9(a) to FIG. 9(c), as the temperature of the GaN ingot 20 rises, the nitrogen G system expands along the virtual plane 15, and the crack 14 system grows. In addition, as shown in FIG. 9(d), the expansion of the nitrogen gas G is suppressed and closed by the peripheral region 16, and it can be confirmed that the system is formed to cover almost the entire area of the virtual surface 15. An enlarged crack was made 17.

As a result of the above, as a semiconductor ingot (semiconductor object), the following GaN ingot 20 can be obtained. As shown in FIG. 8, the GaN ingot 20 is internally provided with a modified region 12 formed along a virtual plane 15 opposite to the surface 20a, and is surrounded by the modified region 12 Set up the peripheral area 16. The modified region 12 includes a plurality of modified spots 13 and a plurality of cracks 14 and nitrogen gas G extending from the plurality of modified spots 13 respectively. The modified regions 12 are provided in plural in a row in the Z direction. The peripheral region 16 is a region where the modified spots 13 are not formed, and prevents the progress of the cracks 14 from the enclosed modified region 12 toward the outer surface of the GaN ingot 20. The peripheral area 16 is provided in plural corresponding to each of the plural modified areas 12. The peripheral region 16 hinders the progress of the cracks 14 from the enclosed modified region 12 toward other modified regions 12 adjacent to the modified region 12.

Next, a peripheral region removal process of removing a plurality of peripheral regions 16 in the GaN ingot 20 is performed. In the peripheral area removal process, as shown in FIG. 10, the laser processing device 1 is made to follow the cutting plan set at the boundary between the peripheral area 16 and the virtual surface 15 (processing target area R). Face M, to concentrate the laser light L2 inside the GaN ingot 20. As a result, modified regions and cracks are formed inside the GaN ingot 20 along the planned cutting plane M. The formation of such modified regions and cracks can be achieved by general laser processing for cutting. The GaN ingot 20 is cut along the formed modified regions and cracks, and a plurality of peripheral regions 16 are cut out from the GaN ingot 20. The modified region 12 (the precipitation surface of the deposited gallium) is exposed.

In the peripheral area removal process, the part corresponding to the peripheral area 16 may be mechanically removed by a cutting edge (crystal cutter) or the like. In the peripheral area removal process, the part corresponding to the peripheral area 16 can also be removed by blade dicing. In the peripheral area removal process, the part corresponding to the peripheral area 16 can also be removed using a wire saw such as a diamond wire. In the peripheral area removal process, the part corresponding to the peripheral area 16 can also be ground (polished) with a grinding material such as a wheel stone.

Next, a stimulus imparting process for imparting a stimulus from the outside to the plurality of modified regions 12 formed in the GaN ingot 20 is performed. In the stimulus imparting process, as shown in FIG. 11, the laser processing device 1 is made to condense the laser light L3 inside the modified region 12 to impart stimuli to the modified region 12. As a result, the internal pressure release effect of the nitrogen gas G contained in the modified region 12 is also utilized, as shown in FIG. 12(a), a part of the GaN ingot 20 is formed along the virtual plane 15 as shown in FIG. Make peeling. Here, the laser light L3 is condensed into the plurality of modified regions 12 at the same time or sequentially, and each part of the GaN ingot 20 is peeled off along the virtual plane 15 at the same time or sequentially.

In the stimulation imparting process, a cutting blade or the like may be used to impart mechanical stimulation to the modified region 12. In the stimulus imparting process, it is also possible to impart a stimulus to the modified area 12 by cutting with a blade. In the stimulus imparting process, a wire saw such as a diamond wire can also be used to impart a stimulus to the modified region 12. In the stimulus imparting process, the stimulus can be imparted from the outer surface (single direction) of one of the GaN ingots 20, or the stimulus can be imparted from a plurality of outer surfaces (multiple directions). In the stimulus imparting process, it is also possible to impart a stimulus to the modified region 12 without contact by ultrasonic vibration or the like. In the stimulus imparting process, it is only necessary to impart a stimulus to at least the precipitates and the cracks 17 in the modified region 12.

Next, as shown in FIG. 12(b), a wafering process is performed in which each part of the peeled GaN ingot 20 is removed and the modified region 12 is removed and wafered. In the wafering process, the modified region 12 remaining in each part of the peeled GaN ingot 20 is removed by etching or polishing. In the wafering process, the modified region 12 can also be removed by other mechanical processing or laser processing. Through the above process, the GaN ingot 20 is cut with the plurality of modified regions 12 as a starting point. That is, due to the crack 17, the GaN ingot 20 is cut. As a result, a plurality of GaN wafers 30 are obtained from the GaN ingot 20 with each of the plurality of cracks 17 as the boundary.

Among the above processes, up to the laser processing process is the laser processing method of the first embodiment. Among the above processes, until the process of obtaining a plurality of GaN wafers 30, it is the semiconductor component manufacturing method of the first embodiment. The peripheral area removal process, stimulus provision process, and wafering process constitute the second process.

As described above, in the laser processing method and the semiconductor component manufacturing method of the first embodiment, the crack 14 can be progressed from the modified region 12 to the outside of the GaN ingot 20 by the peripheral region 16 The situation hinders. It is possible to prevent the nitrogen gas G contained in the modified region 12 from escaping to the outside through the crack 14. Therefore, the pressure (internal pressure) of the nitrogen gas G can be effectively raised and maintained. As a result, the internal pressure can be used to easily form the crack 17 covering the virtual surface 15. By obtaining the GaN wafer 30 from the GaN ingot 20 with the crack 17 covering the virtual surface 15 as a boundary, it becomes possible to obtain a suitable GaN wafer 30.

Furthermore, in the laser processing method and the semiconductor component manufacturing method of the first embodiment, the amount of progress of the crack 14 along the virtual surface 15 is large, and the virtual surface 15 can be enlarged. It becomes possible to realize good slicing along the virtual surface 15. A peeling surface (cut surface) with small irregularities can be obtained. For example, the general unevenness of the peeling surface caused by cutting is about 25 μm, while the unevenness of the peeling surface caused by the first embodiment is 5 μm, which is extremely small. Furthermore, it becomes possible to suppress undesirable cracks extending in the Z direction during cutting.

In the laser processing method and the semiconductor component manufacturing method of the first embodiment, the peripheral region 16 has a frame shape surrounding the modified region 12 when viewed from the Z direction. By forming such a peripheral region 16, the progress of the crack 14 toward the outer surface of the GaN ingot 20 can be effectively prevented.

In the laser processing method and the semiconductor member manufacturing method of the first embodiment, the GaN ingot 20 is used as the semiconductor object. By using the GaN ingot 20 containing nitride, and by injecting the laser light L into the inside of the GaN ingot 20, the GaN ingot 20 can be decomposed and nitrogen gas G can be generated. In addition, the application of gallium nitride to optical elements and power elements is progressing day by day. From this viewpoint, it is also effective to use GaN ingot 20 as a semiconductor object.

In the semiconductor component manufacturing method of the first embodiment, the virtual plane 15 is set in plural so as to be aligned in the Z direction. The modified area 12 and the peripheral area 16 are provided in plural corresponding to each of the plural virtual surfaces 15. The peripheral region 16 hinders the progress of the cracks 14 from the enclosed modified region 12 toward other modified regions 12 adjacent to the modified region 12. According to this, it is possible to obtain a plurality of GaN wafers 30 from one GaN ingot 20. In addition, since the peripheral region 16 hinders the progress of the cracks 14 from the modified region 12 to the other modified regions 12, it is possible to suppress the nitrogen gas G from escaping to the modified region 12 In the other modified region 12, the pressure of nitrogen gas G can be effectively increased and maintained.

In the semiconductor component manufacturing method of the first embodiment, after the laser processing process, the GaN ingot 20 is heated to expand the nitrogen gas G and cause the crack 14 to progress along the virtual plane 15. By this, the crack 14 covering the virtual surface 15 can be reliably formed.

In the semiconductor component manufacturing method of the first embodiment, after the laser processing process, a part of the GaN ingot 20 is peeled off along the virtual surface 15 by applying a stimulus to the modified region 12 from the outside. According to this, it is possible to release a part of the GaN ingot 20 by using the released force while releasing the pressure of the nitrogen gas G in the modified region 12.

In the GaN ingot 20 of the first embodiment, the progress of the cracks 14 from the modified region 12 toward the outer surface of the GaN ingot 20 is hindered by the peripheral region 16, and for the nitrogen contained in the modified region 12 The situation where G escapes to the outside through the crack 14 is suppressed. Therefore, it is possible to effectively increase and maintain the pressure of nitrogen gas G. Therefore, the internal pressure can be used to advance the crack 14 along the virtual surface 15 with good accuracy. By obtaining the GaN wafer 30 from the GaN ingot 20 with the crack 17 covering the virtual surface 15 as a boundary, it becomes possible to obtain a suitable GaN wafer 30.

In the GaN ingot 20 of the first embodiment, the modified regions 12 are provided in plural so as to be arranged side by side in the Z direction. The peripheral region 16 is provided with plural numbers corresponding to each of the plurality of modified regions 12, and for the surrounding modified regions 12 toward other modified regions adjacent to the modified region 12 The progress of the crack of 12 and 14 is hindered. According to this, it is possible to obtain a plurality of GaN wafers 30 from one GaN ingot 20. It is possible to prevent the nitrogen gas G from escaping from the reforming region 12 to other reforming regions 12, so that the pressure of the nitrogen gas G can be effectively increased and maintained.

In addition, in the laser processing method and the semiconductor component manufacturing method of the first embodiment, the peripheral region 16 also obstructs the outflow of the precipitates that are precipitated and melted due to the decomposition of the nitride to the outside. By this, it is possible to leave the precipitate in the processing target region R, and to use the precipitate as a starting point when heating is performed in the subsequent heating process.

As shown in FIG. 13, the above-mentioned laser processing method and semiconductor component manufacturing method may be further provided with holes H1, H2, H3 formed in the peripheral region 16 to allow nitrogen gas G to escape to the outside. engineering. The hole formation process is implemented before the heating process. The holes H1, H2, and H3 are holes for exhausting the gas contained in the modified region 12. The holes H1, H2, and H3 connect the inside and outside of the peripheral area 16. The holes H1, H2, and H3 are formed in such a way that the pressure of the nitrogen gas G does not drop below a certain level.

The hole H1 is the first hole that reaches the side surface 20b from the modified region 12 (the processing target region R). The hole H2 is a second hole that reaches the side surface 20b from the modified region 12 and has a larger diameter than the hole H1. The hole H3 is the third hole that reaches the corner of the GaN ingot 20 from the modified region 12. The holes H1, H2, and H3 can also be formed by cracks extending from the modified region 12 when the modified region 12 is formed by the laser processing device 1 described above. Even in this case, the same system can ensure the above-mentioned functions of the peripheral region 16. The method of forming the holes H1, H2, and H3 is not particularly limited, and various known methods can be used.

In the case of the hole formation process and the holes H1, H2, and H3 obtained by the hole formation process, when the pressure rise (expansion) of the nitrogen gas G causes deformation or bending of the GaN ingot 20 At this time, it is possible to allow the nitrogen gas G to escape to the outside and suppress the deformation or bending. The system can suppress the occurrence of fragmentation and transfer caused by the deformation or bending. It is possible to suppress the spontaneous peeling of a part of the GaN ingot 20. For example, when wax is attached and peeled off, the adhesion can be improved. When etching is performed, the etchant system becomes easy to enter, and the etching rate can be increased. In addition, at least one of the holes H1, H2, and H3 may be formed. The number and size of the holes H1, H2, and H3 are not particularly limited, and can be set according to the precipitation amount of gallium and the internal pressure of nitrogen gas G.

In the above-mentioned peripheral area removal process, the direction in which the plurality of peripheral areas 16 are removed is not limited. It can be processed from the surface 20a side, or from the side surface 20b side, or It is processed from the surface 20c side. For example, as shown in FIG. 14, in the peripheral area removal process, the portion corresponding to the peripheral area 16 may be moved from the side surface 20b side along the modified area 12 by the abrasive PL such as towstone. The direction of extension is approached and polished.

The formation of the modified region 12 (a plurality of modified points 13) along the virtual surface 15 is not particularly limited, and it may be formed in the same manner as described below.

First, make the laser processing apparatus 1, as shown in FIGS. 15 and 16, by injecting the laser light L into the GaN ingot 20 from the surface 20a, along the virtual surface 15 (for example, with A plurality of modified points (first modified points) 13a are formed in a two-dimensional arrangement along the entire virtual surface 15). At this time, the laser processing device 1 forms a plurality of modified spots 13a so that the plurality of cracks 14a extending from the plurality of modified spots 13a are not connected to each other. In addition, the laser processing device 1 moves the condensing point C of the pulsed laser light L along the virtual surface 15 to form a plurality of rows of modified points 13a. In addition, in Figures 15 and 16, the modified point 13a is marked with a blank (no lower hatch), and the extent of the crack 14a is marked with a dashed line (also in Figures 17-22) the same).

In the modified example, the pulsed laser light L is condensed at a plurality of (for example, 6) light collection points C arranged side by side in the Y direction to be modulated by spatial light. The device 4 has been modulated. After that, the plurality of light collection points C are relatively moved on the virtual surface 15 along the X direction. As an example, the distance between adjacent light collecting points C in the Y direction is 8 μm, and the pulse pitch of the laser light L (that is, the relative moving speed of the plural light collecting points C The value obtained by dividing by the repetition frequency of the laser light L) is 10μm. In addition, the pulse energy of the laser light L (hereinafter, simply referred to as "the pulse energy of the laser light L") of the laser light L at one light collection point C is 0.33 μJ. In this case, the distance between the centers of adjacent modified dots 13a in the Y direction is 8 μm, and the distance between the centers of adjacent modified dots 13a in the X direction is 10 μm. In addition, the plurality of cracks 14a extending from the plurality of modified points 13a are not connected to each other.

Next, the laser processing apparatus 1 is made, as shown in FIGS. 17 and 18, by injecting the laser light L into the GaN ingot 20 from the surface 20a, and along the virtual surface 15 (for example, with A plurality of modified points (second modified points) 13b are formed along the entire virtual surface 15 in a two-dimensional arrangement). At this time, the laser processing device 1 forms a plurality of modified spots 13b so as not to overlap with the plurality of modified spots 13a and the plurality of cracks 14a. In addition, the laser processing device 1 forms the modification of a plurality of rows by moving the condensing point C of the pulsed laser light L between the rows of the plurality of rows of modified points 13a along the virtual plane 15. Mass point 13b. In this project, the plurality of cracks 14b extending from the plurality of modified points 13b can also be connected with the plurality of cracks 14a. In addition, in FIG. 17 and FIG. 18, the modified point 13b is marked with a dot-shaped lower shadow, and the extended range of the crack 14b is marked with a dashed line (the same is also true in FIGS. 19-22).

In the modified example, the pulsed laser light L is condensed at a plurality of (for example, 6) light collection points C arranged side by side in the Y direction to be modulated by spatial light. The device 4 has been modulated. After that, the plurality of light collection spots C are relatively moved on the virtual surface 15 along the X direction at the center between the rows of the plurality of rows of modified spots 13a. As an example, the distance between adjacent light collection points C in the Y direction is 8 μm, and the pulse pitch of the laser light L is 10 μm. In addition, the pulse energy of the laser light L is 0.33 μJ. In this case, the distance between the centers of the adjacent modified dots 13b in the Y direction is 8 μm, and the distance between the centers of the adjacent modified dots 13b in the X direction is 10 μm.

Next, make the laser processing apparatus 1, as shown in FIG. 19 and FIG. 20, by injecting the laser light L into the GaN ingot 20 from the surface 20a, along the virtual surface 15 (for example, with A plurality of modified points (third modified points) 13c are formed in a two-dimensional arrangement along the entire virtual surface 15). Furthermore, the laser processing device 1 is made to enter the inside of the GaN ingot 20 from the surface 20a as shown in FIGS. 21 and 22, and along the virtual surface 15 (for example, with A plurality of modified points (third modified points) 13d are formed in a two-dimensional arrangement along the entire virtual surface 15). At this time, the laser processing device 1 forms a plurality of modified spots 13c, 13d so as not to overlap with the plurality of modified spots 13a, 13b. In addition, the laser processing device 1 forms a plurality of rows by moving the light collection point C of the pulsed laser light L between the rows of the plurality of rows of modified points 13a and 13b along the virtual plane 15 The modified point 13c, 13d. In this project, the plurality of cracks 14c, 14d extending from the plurality of modified points 13c, 13d, respectively, can also be connected with the plurality of cracks 14a, 14b. In addition, in FIG. 19 and FIG. 20, the modified point 13c is marked by the lower shadow of the solid line, and the extended range of the crack 14c is marked by the dashed line (the same in FIGS. 21 and 22). In addition, in Fig. 21 and Fig. 22, the modified point 13d is marked by a solid line shadow (the solid line shadow that is inclined in the opposite direction to the solid line shadow of the modified point 13c), and the extent of the crack 14d It is marked with a dashed line.

In the modified example, the pulsed laser light L is condensed at a plurality of (for example, 6) light collection points C arranged side by side in the Y direction to be modulated by spatial light. The device 4 has been modulated. After that, the plurality of light collection points C are relatively moved on the virtual surface 15 along the X direction at the center between the plurality of rows of modified spots 13a and 13b. As an example, the distance between adjacent light collection points C in the Y direction is 8 μm, and the pulse pitch of the laser light L is 5 μm. In addition, the pulse energy of the laser light L is 0.33 μJ. In this case, the distance between the centers of the adjacent modified dots 13c in the Y direction is 8 μm, and the distance between the centers of the adjacent modified dots 13c in the X direction is 5 μm. The distance between the centers of the adjacent modified spots 13d in the Y direction is 8 μm, and the distance between the centers of the adjacent modified spots 13d in the X direction is 5 μm.

Here, we will show the experimental results of the reduction of the unevenness that appears on the peeling surface of the GaN wafer 30 in the GaN wafer 30 formed by the laser processing method and the semiconductor component manufacturing method of the modification example. Description.

FIG. 23 is an image of the peeling surface of a GaN wafer formed by one example of the laser processing method and the semiconductor component manufacturing method. (a) and (b) of FIG. 24 are shown in FIG. 23 The height profile of the peeling surface. In this example, the laser light L having a wavelength of 532 nm is injected from the surface 20a of the GaN ingot 20 into the inside of the GaN ingot 20, and by making one condensing point C along the X direction The relative movement on the virtual surface 15 forms a plurality of modified points 13 along the virtual surface 15. At this time, the distance between adjacent light collection points C in the Y direction is set to 10 μm, the pulse pitch of the laser light L is set to 1 μm, and the pulse energy of the laser light L is set to 1 μJ. In this case, as shown in (a) and (b) of FIG. 24, on the peeled surface of the GaN wafer 30 (the surface formed by the crack 17), there are irregularities of about 25 μm. .

FIG. 25 is an image of the peeling surface of a GaN wafer formed by other examples of laser processing methods and semiconductor component manufacturing methods, and (a) and (b) of FIG. 26 are shown in FIG. 25 The height profile of the peeling surface. In this example, the laser light L having a wavelength of 532nm is injected into the GaN ingot 20 from the surface 20a of the GaN ingot 20, which is the same as the laser processing method and the semiconductor component manufacturing method of the modified example Yes, a plurality of modified points 13 are formed along the virtual surface 15. When forming a plurality of modified spots 13a, the distance between adjacent light collection points C in the Y direction is set to 6μm, the pulse pitch of the laser light L is set to 10μm, and the pulse energy of the laser light L , The system is set to 0.33μJ. When forming a plurality of modified spots 13b, the distance between adjacent light collection points C in the Y direction is set to 6μm, the pulse pitch of the laser light L is set to 10μm, and the pulse energy of the laser light L , The system is set to 0.33μJ. When forming a plurality of modified spots 13c, the distance between adjacent light collection points C in the Y direction is set to 6μm, the pulse pitch of the laser light L is set to 5μm, and the pulse energy of the laser light L , The system is set to 0.33μJ. When forming a plurality of modified spots 13d, the distance between adjacent light collecting points C in the Y direction is set to 6μm, the pulse pitch of the laser light L is set to 5μm, and the pulse energy of the laser light L , The system is set to 0.33μJ. In this case, as shown in (a) and (b) of FIG. 26, the peeling surface of the GaN wafer 30 has irregularities of about 5 μm.

According to the above experimental results, it is known that in the GaN wafer formed by the laser processing method and the semiconductor component manufacturing method of the modified example, the unevenness on the peeling surface of the GaN wafer 30 becomes smaller. That is, the crack 17 is formed along the virtual surface 15 with good accuracy. In addition, if the unevenness that appears on the peeled surface of the GaN wafer 30 becomes smaller, the amount of grinding for flattening the peeled surface can be reduced. Therefore, the reduction of the unevenness that appears on the peeling surface of the GaN wafer 30 is advantageous in terms of material utilization efficiency and production efficiency.

Next, the principle of the unevenness on the peeled surface of the GaN wafer 30 will be explained.

For example, as shown in FIG. 27, a plurality of modified points 13a are formed along the virtual surface 15 so that the modified points 13b overlap with the cracks 14a extending from the modified point 13a on one side of it. , To form a plurality of modified points 13b along the virtual surface 15. In this case, the complex number of cracks 14a is caused by the deposited gallium and becomes a state in which the laser light L is easily absorbed. Therefore, even if the light collection point C is positioned on the virtual surface 15, it becomes a relative position. It is easy to form the modified point 13b at the incident side of the laser light L at the modified point 13a. Next, a plurality of modified dots 13c are formed along the virtual surface 15 so that the modified dots 13c overlap with the cracks 14b extending from the modified dots 13b on one side of the modified dots 13c. In this case, the same is true. Since the multiple cracks 14b are caused by the deposited gallium, the laser light L is easily absorbed. Therefore, even if the condensing point C is located on the virtual surface 15 , It also becomes easier to form the modified point 13c on the incident side of the laser light L with respect to the modified point 13b. In this way, in this example, the plural modified points 13b are relatively easy to be formed on the incident side of the laser light L relative to the plural modified points 13a, and furthermore, the plural modified points 13c are relatively relatively to the plural modified points 13a. The modified spots 13b are easily formed on the incident side of the laser light L.

In contrast to this, for example, as shown in FIG. 28, a plurality of modified points 13a are formed along the virtual surface 15 so that the modified points 13b do not extend from the modified points 13a on both sides thereof. The cracks 14a overlap each other to form a plurality of modified spots 13b along the virtual surface 15. In this case, although the multiple cracks 14a are caused by the deposited gallium and are in a state where the laser light L is easily absorbed, the modified spots 13b do not overlap with the cracks 14a, so the modified spots 13b The system is also formed on the virtual surface 15 in the same manner as the modified point 13a. Next, a plurality of modified points 13c are formed along the virtual surface 15 in such a manner that the modified point 13c overlaps with the cracks 14a, 14b extending from each of the modified points 13a, 13b on both sides of the modified point 13c. . Furthermore, a plurality of modified points 13d are formed along the virtual surface 15 in such a manner that the modified point 13d overlaps with the cracks 14a, 14b extending from each of the modified points 13a, 13b on both sides of the modified point 13d. . In these cases, the multiple cracks 14a and 14b are caused by the deposited gallium and become a state in which the laser light L is easily absorbed. Therefore, even if the light collection point C is located on the virtual surface 15 Above, it also becomes easier to form the modified spots 13c, 13d on the incident side of the laser light L with respect to the modified spots 13a, 13b. In this way, in this example, only the plural modified points 13c and 13d are formed on the incident side of the laser light L as opposed to the plural modified points 13a and 13b.

Based on the above principle, it can be known that in the laser processing method and the semiconductor component manufacturing method of the modification, the plurality of modified points 13a and the plurality of cracks 14a extending from the plurality of modified points 13a will not be separated from each other. The formation of plural modified spots 13b overlapping each other is extremely important for reducing the unevenness that appears on the peeling surface of the GaN wafer 30.

Next, a description will be given of the experimental results showing that the crack 17 progresses along the virtual surface 15 with good accuracy in the laser processing method and the semiconductor component manufacturing method of the modified example.

Figure 29 (a) and (b) are the portraits of the cracks formed during the laser processing method and the semiconductor component manufacturing method of one example, and Figure 29 (b) is shown in Figure 29 (a) Enlarged portrait inside the rectangular frame of Zhongzhi. In this example, the laser light L having a wavelength of 532nm is injected from the surface 20a of the GaN ingot 20 into the inside of the GaN ingot 20, and the 6 beams arranged side by side in the Y direction are collected. The point C moves relative to the virtual surface 15 along the X direction to form a plurality of modified points 13 along the virtual surface 15. At this time, the distance between adjacent light collection points C in the Y direction is set to 6μm, the pulse pitch of the laser light L is set to 1μm, and the pulse energy of the laser light L is set to 1.33μJ . In addition, the laser was stopped on the way of the virtual plane 15. In this case, as shown in (a) and (b) of Fig. 29, the cracks that have progressed from the processed area to the unprocessed area are located in the unprocessed area and are greatly increased from the virtual surface 15. Of deviation.

Fig. 30(a) and (b) are the portraits of the cracks formed in the laser processing method and semiconductor component manufacturing method of other examples, Fig. 30(b) is in Fig. 30(a) Enlarged portrait inside the rectangular frame of Zhongzhi. In this example, the laser light L having a wavelength of 532nm is injected from the surface 20a of the GaN ingot 20 into the inside of the GaN ingot 20, and the 6 beams arranged side by side in the Y direction are collected. The point C moves relative to the virtual surface 15 along the X direction to form a plurality of modified points 13 along the virtual surface 15. Specifically, first, the distance between adjacent light collection points C in the Y direction is set to 6 μm, the pulse pitch of the laser light L is set to 10 μm, and the pulse energy of the laser light L is set to It is 0.33 μJ, and a plurality of rows of modified spots 13 are formed in the processing area 1 and the processing area 2. Next, set the distance between adjacent light collection points C in the Y direction to 6 μm, the pulse pitch of the laser light L to 10 μm, and the pulse energy of the laser light L to 0.33 μJ, In the processing area 1 and the processing area 2, a plurality of rows of modified spots 13 are formed in such a manner that the positions of each row are at the center between the rows of the plurality of rows of modified spots 13 that have been formed. Next, set the distance between the adjacent light collection points C in the Y direction to 6 μm, the pulse pitch of the laser light L to 5 μm, and the pulse energy of the laser light L to 0.33 μJ, However, only in the processing area 1, the multiple rows of modified spots 13 are formed in such a manner that the positions of the rows are at the center between the rows of the multiple rows of modified spots 13 that have been formed. In this case, as shown in (a) and (b) of FIG. 30, the cracks that progressed from the processing area 1 to the processing area 2 were not enlarged from the virtual surface 15 at the processing area 2. Deviation in amplitude.

Based on the above experimental results, it is known that in the laser processing method and the semiconductor component manufacturing method of the modified example, the crack 17 progresses along the virtual surface 15 with good accuracy. It can be inferred that this is because the plural modified spots 13 formed in advance in the processing area 2 serve as guides when the crack progresses.

Next, in the laser processing method and the semiconductor component manufacturing method of the modified example, the extension of the crack 14 extending from the modified point 13 toward the incident side of the laser light L and the opposite side thereof is suppressed Explain the experimental results for presentation.

Fig. 31 is an image of modified spots and cracks formed by the laser processing method and the semiconductor component manufacturing method of the comparative example (the image when viewed from the side). In this comparative example, laser light L having a wavelength of 532 nm is injected into the inside of the GaN ingot 20 from the surface 20a of the GaN ingot 20, and by making one condensing point C along X It moves relative to the virtual surface 15 along the virtual surface 15 to form a plurality of modified points 13 along the virtual surface 15. Specifically, the distance between adjacent light collection points C in the Y direction is set to 2 μm, the pulse pitch of the laser light L is set to 5 μm, and the pulse energy of the laser light L is set to 0.3 μJ, and a plurality of modified spots 13 are formed along the virtual surface 15. In this case, as shown in FIG. 22, the extension of the crack 14 extending from the modified point 13 toward the incident side of the laser light L and the opposite side thereof is about 100 μm.

Fig. 32 is an image of modified spots and cracks formed by the laser processing method and semiconductor component manufacturing method of the first embodiment. Fig. 32(a) is the image under plan view, Fig. 32(b) The portrait is viewed from the side. In this first embodiment, laser light L having a wavelength of 532 nm is injected into the inside of the GaN ingot 20 from the surface 20a of the GaN ingot 20, and the 6 ingots are arranged side by side in the Y direction. The light-collecting point C moves relatively along the X direction on the virtual surface 15 to form a plurality of modified points 13 along the virtual surface 15. Specifically, first, the distance between adjacent light collection points C in the Y direction is set to 8 μm, the pulse pitch of the laser light L is set to 10 μm, and the pulse energy of the laser light L is set to It is 0.3 μJ, and a plurality of modified spots 13a are formed along the virtual surface 15. Next, in the state where the 6 light collection points C arranged side by side in the Y direction are shifted by +4μm in the Y direction from the previous state, the light collection points adjacent in the Y direction are set The distance between C is set to 8 μm, the pulse pitch of the laser light L is set to 10 μm, and the pulse energy of the laser light L is set to 0.3 μJ, and a plurality of modified spots 13b are formed along the virtual surface 15. Next, in the state where the 6 light collection points C arranged side by side in the Y direction are shifted by -4μm in the Y direction from the previous state, the light collection points adjacent in the Y direction are set The distance between C is set to 8 μm, the pulse pitch of the laser light L is set to 5 μm, and the pulse energy of the laser light L is set to 0.3 μJ, and a plurality of modified spots 13 are formed along the virtual surface 15. Next, in the state where the 6 light collection points C arranged side by side in the Y direction are shifted by +4μm in the Y direction from the previous state, the light collection points adjacent in the Y direction are set The distance between C is set to 8 μm, the pulse pitch of the laser light L is set to 5 μm, and the pulse energy of the laser light L is set to 0.3 μJ, and a plurality of modified spots 13 are formed along the virtual surface 15. From this, it can be inferred that the modified dots 13a formed in the first time and the modified dots formed in the third time overlap each other, and the modified dots 13b formed in the second time and the modified dots formed in the fourth time The modified points overlap each other. In this case, as shown in (b) of FIG. 32, the extension of the crack 14 extending from the modified point 13 toward the incident side of the laser light L and the opposite side thereof is about 70 μm.

Figure 33 (a) and (b) are images of modified spots and cracks formed by the laser processing method and semiconductor component manufacturing method of the second embodiment, and Figure 33 (a) is a plan view The portrait, Figure 33(b) is the portrait viewed from the side. In this second embodiment, laser light L having a wavelength of 532 nm is injected into the inside of the GaN ingot 20 from the surface 20a of the GaN ingot 20, which is similar to the laser processing method and semiconductor component of the modified example. The manufacturing method is the same, and a plurality of modified spots 13 are formed along the virtual surface 15. When forming a plurality of modified spots 13a, the distance between adjacent light collection points C in the Y direction is set to 8μm, the pulse pitch of the laser light L is set to 10μm, and the pulse energy of the laser light L , The system is set to 0.3μJ. When forming a plurality of modified spots 13b, the distance between adjacent light collection points C in the Y direction is set to 8μm, the pulse pitch of the laser light L is set to 10μm, and the pulse energy of the laser light L , The system is set to 1.8μJ. When forming a plurality of modified spots 13c, the distance between adjacent light collecting points C in the Y direction is set to 8μm, the pulse pitch of the laser light L is set to 5μm, and the pulse energy of the laser light L , The system is set to 0.3μJ. When forming plural modified spots 13d, the distance between adjacent light collecting points C in the Y direction is set to 8μm, the pulse pitch of the laser light L is set to 5μm, and the pulse energy of the laser light L , The system is set to 0.3μJ. In this case, as shown in (b) of FIG. 33, the extension of the crack 14 extending from the modified point 13 toward the incident side of the laser light L and the opposite side thereof is about 50 μm.

Fig. 33 (c) and (d) are portraits of modified spots and cracks formed by the laser processing method and semiconductor component manufacturing method of the third embodiment, and Fig. 33(c) is a plan view The portrait of Figure 33(d) is the portrait viewed from the side. In this third embodiment, the virtual plane 15 (that is, the virtual plane that has been formed with a plurality of rows of modified points 13) in the state shown in (a) and (b) of FIG. Surface 15), and then a plurality of modified points 13 are formed. Specifically, first, the distance between adjacent light collection points C in the Y direction is set to 8 μm, the pulse pitch of the laser light L is set to 5 μm, and the pulse energy of the laser light L is set to It is 0.1 μJ, and the modified spots 13 of the plural rows are formed in such a manner that the positions of the respective rows are at the center between the rows of the plural rows of modified dots 13 that have been formed. In this case, as shown in (d) of FIG. 33, the extension of the crack 14 extending from the modified point 13 toward the incident side of the laser light L and the opposite side thereof is approximately 60 μm.

According to the above experimental results, it is known that if it is not overlapped with the plurality of modified points 13a and the plurality of cracks 14a formed along the virtual surface 15, it is along the virtual surface 15 Forming a plurality of modified spots 13b (the first embodiment, the second embodiment, and the third embodiment), the extension of the cracks 14 extending from the modified spot 13 toward the incident side of the laser light L and the opposite side Department is suppressed. In addition, when a plurality of modified points 13 are further formed along the virtual surface 15, if it is not overlapped with the plural modified points 13a, 13b already formed along the virtual surface 15. The formation of plural modified points 13 along the virtual surface 15 (the second embodiment and the third embodiment) makes it easy to form cracks covering the virtual surface 15. [Laser processing method and semiconductor component manufacturing method of the second embodiment]

Next, the laser processing method and the semiconductor component manufacturing method of the second embodiment will be described. In the following description, the description overlapping with the first embodiment described above will be omitted, and the differences will be described.

The object 11 of the laser processing method and the semiconductor member manufacturing method of the second embodiment is as shown in FIG. 34, and is a GaN wafer (semiconductor wafer) formed into a disc shape by GaN, for example. , Semiconductor object) 30. As an example, the diameter of the GaN wafer 30 is 2 inches, and the thickness of the GaN wafer 30 is 100 μm. The laser processing method and the semiconductor component manufacturing method of the second embodiment are implemented in order to cut out a plurality of semiconductor devices (semiconductor components) 40 from the GaN wafer 30. As an example, the outer shape of the GaN substrate portion of the semiconductor device 40 is 1 mm×1 mm, and the thickness of the GaN substrate portion of the semiconductor device 40 is tens of μm.

First, a laser processing process for forming the modified region 12 along each of the plurality of virtual surfaces 15 by the above-mentioned laser processing device 1 is performed. Each of the plurality of virtual planes 15 is the plane inside the GaN wafer 30 that is opposite to the surface 30a of the GaN wafer 30, and is arranged side by side in the direction in which the surface 30a extends. set up. In the present embodiment, each of the plurality of virtual surfaces 15 is a surface parallel to the surface 30a, and has a rectangular shape, for example. Each of the plurality of virtual planes 15 is set so as to be aligned in two dimensions in a direction parallel to the orientation plane 31 of the GaN wafer 30 and a direction perpendicular to it.

In the GaN wafer 30, a plurality of peripheral regions 16 are set to surround each of the plurality of virtual planes 15. That is, each of the plurality of virtual planes 15 does not reach the side surface 30b of the GaN wafer 30. The peripheral area 16 is provided with plural numbers corresponding to each of the plural virtual surfaces 15. As an example, the width of the peripheral region 16 corresponding to each of the plurality of virtual surfaces 15 (in this embodiment, it is half the distance between adjacent virtual surfaces 15) is 30 μm or more. The region surrounded by the peripheral region 16 in the GaN wafer 30 is a processing target region R that is a target for forming the modified region 12. The processing target region R includes the virtual surface 15.

The formation of the modified regions 12 along each of the plurality of virtual planes 15 is performed in the same manner as the laser processing method and the semiconductor component manufacturing method of the first embodiment. As a result, the GaN wafer 30, as shown in FIG. 35, is formed along each of the plurality of virtual planes 15 including a plurality of modified spots 13 and a plurality of cracks 14 and nitrogen gas G And the modified region 12 of gallium. In FIG. 35, the range where the plurality of modified spots 13 and the plurality of cracks 14 are formed is marked by a dotted line.

Next, in the semiconductor manufacturing apparatus, as shown in FIG. 36, a plurality of functional elements 32 are formed on the surface 30a of the GaN wafer 30. When viewed from the thickness direction of the GaN wafer 30, each of the plural functional elements 32 is formed in such a way that one functional element 32 is included in one virtual plane 15 . The functional element 32 is, for example, a light-receiving element such as a photodiode, a light-emitting element such as a laser diode, and a circuit element such as a memory.

In this embodiment, when a plurality of functional elements 32 are formed on the surface 30a, the semiconductor manufacturing apparatus functions as a heating device. That is, when a plurality of functional elements 32 are formed on the surface 30a, the semiconductor manufacturing apparatus heats the GaN wafer 30 and removes the plurality of modified spots 13 from each of the plurality of virtual surfaces 15 The plurality of cracks 14 that are respectively extended are connected to each other, and a crack 17 is formed at each of the plurality of virtual surfaces 15 (that is, the cracks 17 covering the virtual surface 15). In FIG. 36, the range where the plurality of modified spots 13 and the plurality of cracks 14 and the cracks 17 are formed are marked by dashed lines. In addition, another heating device independent of the semiconductor manufacturing device can also be used. In addition, it is also possible to apply some force to the GaN wafer 30 by a method other than heating to connect the plurality of cracks 14 to each other and form the cracks 17. In addition, it is also possible to form a plurality of modified points 13 along the virtual surface 15 to connect the plurality of cracks 14 to each other and form a crack 17.

Here, in the GaN wafer 30, nitrogen gas is generated in the plurality of cracks 14 extending from the plurality of modified spots 13 respectively. Therefore, by heating the GaN wafer 30 to expand the nitrogen gas, the pressure of the nitrogen gas G can be used to form the crack 17. In addition, by the peripheral region 16, the progress and direction of the cracks 14 from the modified region 12 surrounded by the peripheral region 16 toward the outer surface (surface 30a and side surface 30b) of the GaN wafer 30 and the modified region 12 The progress of the cracks 14 of the other adjacent modified regions 12 is hindered. Therefore, it is possible to prevent the nitrogen gas G from escaping to the outside and other adjacent modified regions 12. In order to achieve this, the width of the peripheral region 16 may be 30 μm or more.

As a result of the above, as a semiconductor wafer (semiconductor object), the following GaN wafer 30 can be obtained. As shown in FIG. 36, the GaN wafer 30 is internally provided with a modified region 12 formed along a virtual plane 15 opposite to the surface 30a, and a modified region 12 surrounded by the modified region 12 Set up the peripheral area 16. The modified region 12 includes a plurality of modified spots 13 and a plurality of cracks 14 and nitrogen gas G extending from the plurality of modified spots 13 respectively. The modified regions 12 are provided in plural in a manner of being side by side in the direction in which the surface 30a extends. The peripheral region 16 is a region where the modified spots 13 are not formed, and hinders the progress of the cracks 14 from the enclosed modified region 12 toward the outer surface of the GaN wafer 30. The peripheral area 16 is provided in plural corresponding to each of the plural modified areas 12. The peripheral region 16 hinders the progress of the cracks 14 from the enclosed modified region 12 toward other modified regions 12 adjacent to the modified region 12.

Next, the laser processing apparatus 1 cuts the GaN wafer 30 into each functional element 32. The peripheral area removal process of removing the peripheral area 16 is implemented. In this way, a stimulus is given to the modified region 12, and a part of the GaN wafer 30 is formed along the virtual surface 15 by using the internal pressure release effect of the nitrogen gas G contained in the modified region 12 Peel off. The wafering process of removing and wafering a part of the peeled GaN wafer 30 to remove the modified region 12 is performed. As a result of the above, as shown in FIG. 37, a plurality of semiconductor devices 40 are obtained from the GaN wafer 30 with each of the plurality of cracks 17 as the boundary. In this way, the GaN wafer 30 is cut along each of the plurality of virtual planes 15. In addition, the GaN wafer 30 may be cut into the functional elements 32 by mechanical processing other than laser processing (for example, blade cutting).

Among the above processes, up to the laser processing process is the laser processing method of the second embodiment. In addition, in the above process, the process of obtaining a plurality of semiconductor devices 40 from the GaN wafer 30 with each of the plurality of cracks 17 as the boundary is the semiconductor component manufacturing method of the second embodiment.

As described above, in the laser processing method and the semiconductor member manufacturing method of the second embodiment, the same effects as those of the first embodiment are also exhibited.

In addition, in the semiconductor member manufacturing method of the second embodiment, the virtual plane 15 is set in plural so as to be side by side in the direction in which the surface 30a extends. The modified area 12 and the peripheral area 16 are provided in plural corresponding to each of the plural virtual surfaces 15. The peripheral region 16 hinders the progress of the cracks 14 from the enclosed modified region 12 toward other modified regions 12 adjacent to the modified region 12. According to this, it is possible to obtain a plurality of semiconductor devices 40 from one GaN wafer 30. In addition, since the peripheral region 16 hinders the progress of the cracks 14 from the modified region 12 to the other modified regions 12, it is possible to suppress the nitrogen gas G from escaping to the modified region 12 In the other modified region 12, the pressure of nitrogen gas G can be effectively increased and maintained.

In addition, in the semiconductor component manufacturing method of the second embodiment, after the laser processing process, the peripheral region 16 is removed from the GaN wafer 30 to give a stimulus to the modified region 12, and the modified region 12 will be modified at the same time. The pressure of the nitrogen gas G in the area 12 is released, and the released force is also used to peel off a part of the GaN ingot 20 along the virtual surface 15.

Furthermore, in the GaN wafer 30 of the second embodiment, the progress of the cracks 14 from the modified region 12 toward the outer surface of the GaN wafer 30 is hindered by the peripheral region 16, and the crack 14 contained in the modified region 12 The circumstance that the nitrogen gas G escapes to the outside through the crack 14 is suppressed. Therefore, it is possible to effectively increase and maintain the pressure of nitrogen gas G. Therefore, the internal pressure can be used to advance the crack 14 along the virtual surface 15 with good accuracy. By obtaining the GaN wafer 30 from the GaN ingot 20 with the crack 17 covering the virtual surface 15 as a boundary, it becomes possible to obtain a suitable GaN wafer 30.

In addition, in the GaN wafer 30 of the second embodiment, the modified regions 12 are provided in plural so as to be arranged side by side in the Z direction. The peripheral region 16 is provided with plural numbers corresponding to each of the plurality of modified regions 12, and for the surrounding modified regions 12 toward other modified regions adjacent to the modified region 12 The progress of the crack of 12 and 14 is hindered. According to this, it is possible to obtain a plurality of semiconductor devices 40 from one GaN wafer 30. It is possible to prevent the nitrogen gas G from escaping from the reforming region 12 to other reforming regions 12, so that the pressure of the nitrogen gas G can be effectively increased and maintained.

In addition, the semiconductor object of the second embodiment may also be a GaN wafer 30 in a state after being cut into each functional element 32 and before the peripheral region 16 is removed. In this case, by removing the peripheral region 16 at a desired timing, the semiconductor device 40 can be obtained at a desired timing. Since the semiconductor device 40 can be processed in a state before the semiconductor device 40 is peeled off, the damage of the semiconductor device 40 can be suppressed.

One aspect of the present invention is not limited to the above-mentioned embodiment.

For example, the various numerical values of the laser light L are not limited to the above-mentioned content. However, in order to prevent the cracks 14 from extending from the modified point 13 toward the incident side of the laser light L and the opposite side, the pulse energy of the laser light L can also be set to 0.1 μJ to 1 μJ and the laser light L The pulse width of the light L is 200fs～1ns.

In addition, the semiconductor object processed by the laser processing method and the semiconductor component manufacturing method of one of the aspects of the present invention is not limited to the GaN ingot 20 of the first embodiment and the GaN of the second embodiment Wafer 30. The semiconductor member manufactured by the semiconductor member manufacturing method of one aspect of the present invention is not limited to the GaN wafer 30 of the first embodiment and the semiconductor device 40 of the second embodiment. One virtual plane may be set for one semiconductor object. The material of the semiconductor object may include nitride. The material of the semiconductor object may be a material that generates gas by the laser light L.

In addition, in the above-mentioned embodiment and modification examples, the formation of the plurality of modified spots 13 can also be carried out in order for each of the plurality of virtual surfaces 15 from the side opposite to the surface 20a. In addition, in the above-mentioned embodiment and modification examples, the formation of the plurality of modified spots 13 can also be carried out in order for each of the plurality of virtual surfaces 15 from the side opposite to the surface 20a. In addition, in the above-mentioned embodiment and modification, the laser light L can also be divided by the spatial light modulator 4, and a 1 or a plurality of changes can be formed at each of the plurality of virtual planes 15 at the same time. Mass point 13.

In addition, in the laser processing method and the semiconductor component manufacturing method of the first embodiment, it may also be configured that the formation of a plurality of modified spots 13 is formed along one or a plurality of virtual surfaces 15 on the side of the surface 20a. In practice, after one or more GaN wafers 30 are cut out, the surface 20a of the GaN ingot 20 is ground, and then the plurality of modified spots 13 are formed along the side of the surface 20a. A plurality of virtual planes 15 are implemented.

In addition, in the above-mentioned embodiments and modifications, for example, when the range of the peripheral region 16 is narrower than a certain range, the peripheral region removal process may be omitted. In the above-mentioned embodiments and modifications, for example, when the pressure of the generated nitrogen gas G is sufficiently high, the heating process may be omitted.

In addition, the laser processing apparatus 1 is not limited to having the above-mentioned configuration. For example, the laser processing device 1 may not include the spatial light modulator 4.

In addition, in each configuration of the above-mentioned embodiment and modification examples, it is not limited to the above-mentioned materials and shapes, and various materials and shapes can be applied. In addition, each configuration in the above-mentioned embodiment or modification can be arbitrarily applied to each configuration in other embodiments or modification.

12: Modified area (other modified areas) 13,13a,13b,13c,13d: modified point 14,14a, 14b, 14c, 14d: cracks 15: Virtual surface 16: peripheral area 17: Covering the cracks of the virtual surface 20: GaN ingot (semiconductor ingot, semiconductor object) 20a: surface 30: GaN wafers (semiconductor wafers, semiconductor components, semiconductor objects) 30a: surface 40: Semiconductor device (semiconductor component) H1, H2, H3: Hole G: Nitrogen (gas) L: Laser light

[Fig. 1] Fig. 1 is a configuration diagram of the laser processing apparatus of the embodiment. [FIG. 2] FIG. 2 is a side view of a GaN ingot which is the object of the laser processing method and the semiconductor component manufacturing method of the first embodiment. [Fig. 3] Fig. 3 is a plan view of the GaN ingot shown in Fig. 2. [Fig. 4] Fig. 4 is a cross-sectional view of a GaN ingot in the heating process of the laser processing method and the semiconductor component manufacturing method of the first embodiment. [Fig. 5] Fig. 5 is a cross-sectional view of a GaN ingot in the heating process of the laser processing method and the semiconductor component manufacturing method of the first embodiment. [FIG. 6] FIG. 6 is a cross-sectional view of a GaN ingot in the heating process of the laser processing method and the semiconductor component manufacturing method of the first embodiment. [Fig. 7] Fig. 7 is a cross-sectional view of a GaN ingot in the heating process of the laser processing method and the semiconductor component manufacturing method of the first embodiment. [Fig. 8] Fig. 8 is a cross-sectional view of the GaN ingot after the heating process of the laser processing method and the semiconductor component manufacturing method of the first embodiment. [Fig. 9] Fig. 9(a) is a photograph showing the first example of the GaN ingot in the heating process of the laser processing method and the semiconductor component manufacturing method of the first embodiment. Fig. 9(b) is a photograph showing the second example of the GaN ingot in the heating process of the laser processing method and the semiconductor component manufacturing method of the first embodiment. Fig. 9(c) is a photograph showing the third example of the GaN ingot in the heating process of the laser processing method and the semiconductor component manufacturing method of the first embodiment. Fig. 9(d) is a photograph showing the fourth example of the GaN ingot in the heating process of the laser processing method and the semiconductor component manufacturing method of the first embodiment. [Fig. 10] Fig. 10 is a side view of a GaN ingot in the peripheral region removal process of the laser processing method and the semiconductor component manufacturing method of the first embodiment. [FIG. 11] FIG. 11 is a side view of the GaN ingot in the stimulus application process of the laser processing method and the semiconductor component manufacturing method of the first embodiment. [FIG. 12] FIG. 12(a) is a side view of the GaN ingot after the stimulation application process of the laser processing method and the semiconductor component manufacturing method of the first embodiment. Fig. 12(b) is a side view of a GaN wafer obtained by the laser processing method and the semiconductor component manufacturing method of the first embodiment. [FIG. 13] FIG. 13 is a cross-sectional view of a GaN ingot in the heating process of the laser processing method and the semiconductor component manufacturing method of the modification. [FIG. 14] FIG. 14 is a side view of the GaN ingot in the peripheral region removal process of the laser processing method and the semiconductor component manufacturing method of the modification. [FIG. 15] FIG. 15 is a longitudinal cross-sectional view of a part of a GaN ingot in one process of the laser processing method and the semiconductor component manufacturing method of the modification. [FIG. 16] FIG. 16 is a cross-sectional view of a part of a GaN ingot in one process of the laser processing method and the semiconductor component manufacturing method of the modification. [Fig. 17] Fig. 17 is a longitudinal sectional view of a part of a GaN ingot in one of the processes of the laser processing method and the semiconductor component manufacturing method of the modification. [FIG. 18] FIG. 18 is a cross-sectional view of a part of a GaN ingot in one process of the laser processing method and the semiconductor component manufacturing method of the modification. [FIG. 19] FIG. 19 is a longitudinal cross-sectional view of a part of a GaN ingot in one process of the laser processing method and the semiconductor component manufacturing method of the modification. [FIG. 20] FIG. 20 is a cross-sectional view of a part of a GaN ingot in one process of the laser processing method and the semiconductor component manufacturing method of the modification example. [FIG. 21] FIG. 21 is a longitudinal cross-sectional view of a part of a GaN ingot in one process of the laser processing method and the semiconductor component manufacturing method of the modification. [FIG. 22] FIG. 22 is a cross-sectional view of a part of a GaN ingot in one process of the laser processing method and the semiconductor component manufacturing method of the modification. [FIG. 23] FIG. 23 is an image of the peeling surface of a GaN wafer formed by one example of the laser processing method and the semiconductor component manufacturing method. [Fig. 24] Fig. 24(a) is the height profile of the peeling surface shown in Fig. 23. Figure 24(b) is the height profile of the peeling surface shown in Figure 23. [FIG. 25] FIG. 25 is an image of the peeling surface of a GaN wafer formed by the laser processing method and the semiconductor component manufacturing method of another example. [Fig. 26] Fig. 26(a) is the height profile of the peeling surface shown in Fig. 25. [Fig. Figure 26(b) is the height profile of the peeling surface shown in Figure 25. [FIG. 27] FIG. 27 is a schematic diagram for explaining the formation principle of the peeling surface caused by one example of the laser processing method and the semiconductor component manufacturing method. [FIG. 28] FIG. 28 is a schematic diagram for explaining the formation principle of the peeling surface caused by the laser processing method and the semiconductor component manufacturing method of other examples. [Fig. 29] Fig. 29(a) is an image of a crack formed during the laser processing method and the semiconductor component manufacturing method of one example. Figure 29(b) is an enlarged portrait within the rectangular frame in Figure 29(a). [Fig. 30] Fig. 30(a) is an image of a crack formed in the course of the laser processing method and the semiconductor component manufacturing method of another example. Figure 30(b) is an enlarged portrait within the rectangular frame in Figure 30(a). [FIG. 31] FIG. 31 is an image of modified spots and cracks formed by the laser processing method and the semiconductor component manufacturing method of the comparative example. [FIG. 32] FIG. 32(a) is a plane view of modified spots and cracks formed by the laser processing method and the semiconductor component manufacturing method of the first embodiment. Fig. 32(b) is a side view of modified spots and cracks formed by the laser processing method and the semiconductor component manufacturing method of the first embodiment. [FIG. 33] FIG. 33(a) is a plane view of modified spots and cracks formed by the laser processing method and the semiconductor component manufacturing method of the second embodiment. FIG. 33(b) is a side view of modified spots and cracks formed by the laser processing method and the semiconductor component manufacturing method of the second embodiment. FIG. 33(c) is a plane view of modified spots and cracks formed by the laser processing method and the semiconductor component manufacturing method of the third embodiment. FIG. 33(d) is a side view of modified spots and cracks formed by the laser processing method and the semiconductor component manufacturing method of the third embodiment. [Fig. 34] Fig. 34 is a plan view of a GaN wafer that is the target of the laser processing method and the semiconductor component manufacturing method of the second embodiment. [Fig. 35] Fig. 35 is a side view of a part of a GaN wafer in one of the steps of the laser processing method and the semiconductor component manufacturing method of the second embodiment. [Fig. 36] Fig. 36 is a side view of a part of a GaN wafer in one of the steps of the laser processing method and the semiconductor component manufacturing method of the second embodiment. [FIG. 37] FIG. 37 is a side view of the semiconductor device in one of the steps of the laser processing method and the semiconductor component manufacturing method of the second embodiment.

12: Modified area (other modified areas)

13a: Modification point

14a: cracking

15: Virtual surface

16: peripheral area

20: GaN ingot (semiconductor ingot, semiconductor object)

20b: side

G: Nitrogen (gas)

R: Processing target area

Claims (15)

A laser processing method, which is characterized in that the system has: The first step is to inject laser light from the surface of the semiconductor object into the inside of the semiconductor object, and form the inside of the semiconductor object along a virtual surface facing the surface. There are plural modified points and plural cracks and gas modified areas extending from the aforementioned plural modified points respectively, In the first step, the semiconductor object is a region where the modified spots are not formed, and the progress of the cracks from the modified region toward the outer surface of the semiconductor object The peripheral area used as an obstacle is set to surround the modified area. Such as the laser processing method described in claim 1, where: The peripheral region, when viewed from the direction opposite to the surface, presents a frame shape surrounding the modified region. Such as the laser processing method described in claim 1 or 2, in which: The material of the aforementioned semiconductor object includes nitride. The laser processing method described in any one of claims 1 to 3, wherein: It is equipped with a process of forming a hole in the peripheral area to allow the gas to escape to the outside. A method for manufacturing a semiconductor component is a manufacturing method including the laser processing method as described in any one of claims 1 to 4, characterized in that it has: The second step is to obtain a semiconductor component from the semiconductor object with the crack covering the virtual surface as a boundary. The semiconductor component manufacturing method described in claim 5, wherein: The aforementioned virtual surface is set with plural numbers so as to be arranged side by side in the direction opposite to the aforementioned surface, The modified area and the peripheral area are provided with plural numbers corresponding to each of the plural virtual surfaces, The peripheral region prevents the progress of the cracks from the enclosed modified region toward other modified regions adjacent to the modified region. The semiconductor component manufacturing method described in claim 6, wherein: The semiconductor object is a semiconductor ingot, and the semiconductor member is a semiconductor wafer. The semiconductor component manufacturing method described in claim 5, wherein: The aforementioned virtual surfaces are set with plural numbers in such a way that they are arranged side by side in the direction in which the aforementioned surfaces extend, and The modified region and the peripheral region are provided with plural numbers corresponding to each of the plural virtual surfaces, The peripheral region prevents the progress of the cracks from the enclosed modified region toward other modified regions adjacent to the modified region. The semiconductor component manufacturing method described in claim 8, wherein: The aforementioned semiconductor object is a semiconductor wafer, The aforementioned semiconductor component is a semiconductor device. The semiconductor component manufacturing method described in any one of claims 5-9, wherein the method includes: After the first step, the semiconductor object is heated to expand the gas and cause the crack to progress along the virtual surface. The method for manufacturing a semiconductor component as described in any one of claims 5 to 10, wherein: In the second step, a part of the semiconductor object is peeled along the virtual surface by applying a stimulus to the modified region from the outside. The semiconductor component manufacturing method described in any one of claims 5 to 10, wherein: In the second step, the peripheral region is removed from the semiconductor object, and a part of the semiconductor object is peeled along the virtual surface. A semiconductor object is a semiconductor object with a surface, characterized in that it has: The modified region is formed inside the aforementioned semiconductor object along a virtual surface facing the aforementioned surface; and The peripheral area is set to surround the aforementioned modified area, The aforementioned modified area includes a plurality of modified points and a plurality of cracks and gas respectively extending from the aforementioned plural modified points, The surrounding area is an area where the modified spots are not formed, and prevents the progress of the cracks from the enclosed modified area toward the outer surface of the semiconductor object. The semiconductor object described in claim 13, in which: As a semiconductor ingot, The aforementioned modified regions are arranged side by side in the direction opposite to the aforementioned surface, and are provided with plural numbers, The aforementioned peripheral area is provided with plural numbers corresponding to each of the aforementioned plural modified areas, The peripheral region prevents the progress of the cracks from the enclosed modified region toward other modified regions adjacent to the modified region. The semiconductor object described in claim 13, in which: As a semiconductor wafer, The aforementioned modified regions are arranged side by side in the direction in which the aforementioned surface extends, and are provided with plural numbers, The aforementioned peripheral area is provided with plural numbers corresponding to each of the aforementioned plural virtual surfaces, The peripheral region prevents the progress of the cracks from the enclosed modified region toward other modified regions adjacent to the modified region.

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