TW202108273A - Sputtering target, method for bonding target material with backing plate, and sputtering target production method - Google Patents

Abstract

The present invention addresses the problem of providing a sputtering target such that the target material is not susceptible to peeling. This sputtering target comprises a backing plate and target material bonded in a bonding region of the backing plate via a bonding material. The bonding area of the bonding site(s) between the target material and the backing plate is at least 97% with respect to the area of the bonding region and the maximum area of deficiency of the site(s) where there is no bonding material between the target material and the backing plate is not more than 0.6% with respect to the area of the bonding region.

Description

Sputtering target, method for joining target and back plate, and manufacturing method of sputtering target

The present invention relates to a sputtering target, a method for joining the target and a back plate, and a method for manufacturing the sputtering target.

As a conventional sputtering target bonding method, the bonding method of the sputtering target described in JP 6-114549 A (Patent Document 1) can be cited. In the sputtering target bonding method, the target material and the backing plate are coated with molten noodles, and the target material and the backing plate are rubbed against each other while moving relative to overlap, thereby smoothing out the oxidation generated on the coated surface. In the state where oxides or bubbles do not infiltrate, the brazing material is coated with the body, and then the brazing material is cooled and solidified to perform brazing. [Prior Art Literature] [Patent Literature]

[Patent Document 1] Japanese Patent Laid-open No. 6-114549

[The problem to be solved by the invention] However, it is known that in the conventional sputtering target bonding method as described above, the bonding of the target material and the backing plate is insufficient, and the target material may peel off during sputtering. The inventors of the present invention focused on the fact that the ratio (bonding ratio) of the actual bonding area (bonding area) is small relative to the area of the region (bonding area) where the target material and the backing plate should be bonded in the previous method, and it is located in the target material. Among the parts with no bonding material between the back plate (unbonded parts), the area with the largest area (maximum defect area) is large. As a result of diligent research, it is found that the bonding rate and the maximum defect area are the same as the target There is a relationship between the spalling of the wood.

Therefore, the subject of the present invention is to provide a sputtering target capable of realizing a sputtering target in which the target is not easily peeled off during sputtering, a method of joining the target to a backing plate, and a method of manufacturing the sputtering target. [Means to solve the problem]

In order to solve the problem, an embodiment of the sputtering target includes: Backplane; and The target material is joined to the joining area of the back plate (the area of the back plate where the target material should be joined) via the joining material; The bonding area of the bonding portion (bonded portion) between the target and the backing plate is 97% or more with respect to the area of the bonding region, The maximum defect area of the unjoined portion between the target and the back plate is 0.6% or less with respect to the area of the joined region.

According to the embodiment, it is possible to manufacture a sputtering target that can increase the bonding rate and can reduce the maximum defect area, and the target material is not easily peeled off.

In addition, in one embodiment of the sputtering target, the length of the target material is 1000 mm or more and 4000 mm or less.

According to the embodiment, it is possible to manufacture a sputtering target in which the target material is not easy to peel off in a long-sized sputtering target.

In addition, one embodiment of the method of joining the target material and the backing plate is a method of joining the target material and the backing plate using a joining material, which includes: A step of applying a bonding material to the area (bonding area) of the main surface of the back plate where the target material should be bonded; With the end edge (first end edge) of the target material moving from the first end edge side of the joining area of the back plate to the joining area beyond the back plate in the first direction The step of sliding the target material in the first direction along the main surface of the back plate until the position of the second end edge facing the first end edge; and The target material is slidingly moved along the main surface of the back plate in a second direction opposite to the first direction, so that the bonding area of the target material and the back plate is consistent step. Hereinafter, sliding the target in the first direction is also referred to as "slide", and sliding the target in the second direction is also referred to as "returning".

According to the embodiment, the target material is slid in the first direction relative to the back plate and then moved back in the second direction, thereby making the bonding area of the target material and the back plate consistent. Thereby, in the bonding of the target material and the backing plate, the bonding rate can be improved, and the size of the largest defect area where the area of the unbonded part becomes the largest can be reduced. Therefore, it is possible to manufacture a sputtering target in which the target material is not easily peeled off.

In addition, in one embodiment of the method of joining the target material and the backing plate, The target material and the back plate are formed in a long size, The end edge of the target material is formed along the long side direction of the target material, The first end edge and the second end edge of the joining area of the back plate are formed along the long side direction of the back plate and face each other in the short side direction of the back plate, The target is slidably moved relative to the back plate in the short side direction of the back plate.

According to the above-mentioned embodiment, in a long-sized target material and a back plate, the moving distance of the target material relative to the back plate can be reduced, and the working time can be shortened.

In addition, in one embodiment of the method of joining the target material and the backing plate, Including the step of arranging a plurality of wires on the main surface of the backing plate before the step of coating the bonding material, During the movement of the target material in the first direction and the second direction, the target material is slid and moved on the line.

According to the above-mentioned embodiment, the target material is slid on the line, so that the surface to be joined (joining surface) of the target material and the surface to be joined (joining surface) of the backing plate can be held substantially in parallel, easily The target is moved, so the bonding rate can be improved. In addition, since the wire functions as a spacer, the thickness of the bonding layer between the target material formed of the bonding material and the back plate can be made constant.

In addition, in one embodiment of the method of joining the target material and the backing plate, the diameter of the wire is 0.05 mm or more and 0.5 mm or less.

According to this embodiment, wire breakage can be prevented, and the thickness of the bonding layer formed by the bonding material can be prevented from becoming uniform in thickness.

In addition, in an embodiment of the method of joining a target material to a backing plate, it is included between the step of moving the target material in the first direction and the step of moving the target material in the second direction, The step of supplementing the joining material toward the first end edge side of the joining area of the back plate.

According to the above-mentioned embodiment, the joining material is replenished toward the first end edge side of the joining area of the back plate, so the joining material can be replenished to the first end edge side of the joining area where the joining material is likely to be insufficient, and the joining rate can be further improved. And can further reduce the maximum defect area.

In addition, in one embodiment of the method of joining a target material and a backing plate, in the step of moving the target material in the first direction, when the end edge (first end Edge) when moving to a position beyond the second end edge of the bonding area of the back plate, if the second end edge of the bonding area of the back plate is moved to the position of the target material The distance in the first direction to the end edge (first end edge) is set to A, and the width in the first direction of the joining region is set to W, then 0.03≦A/W<1.0.

According to the embodiment, the moving distance of the target material relative to the back plate can be reduced, the bonding rate can be improved, and the maximum defect area can be reduced.

In addition, in an embodiment of the method of joining a target material to a backing plate, in the step of moving the target material in the first direction, when the end edge (first end Edge) when it is arranged on the first end edge side of the bonding area of the back plate, if it is from the first end edge of the bonding area of the back plate to the target The distance to the end edge (first end edge) in the first direction is set to B, and the width of the bonding area in the first direction is set to W, then 0≦B/W<2.0.

According to the embodiment, the moving distance of the target material relative to the back plate can be reduced, or the target material can be slid after being installed on the back plate. Therefore, the bonding rate can be improved and the size of the maximum defect area can be reduced.

In addition, in one embodiment of the method of manufacturing a sputtering target, the target and the backing plate are bonded using the bonding method to manufacture a sputtering target.

According to this embodiment, in the bonding of the target material and the backing plate, the bonding rate can be improved, and the size of the largest defect area where the area of the unbonded part becomes the largest can be reduced. Therefore, it is possible to manufacture a sputtering target in which the target material is not easily peeled off. [Effects of the invention]

According to the sputtering target, the method of joining the target material and the backing plate, and the method of manufacturing the sputtering target of the present invention, a sputtering target in which the target material is not easily peeled off can be manufactured.

Hereinafter, the present invention will be described in detail with the embodiment shown in the drawings.

(Implementation method) FIGS. 1A to 1E are explanatory diagrams showing one embodiment of a method of bonding a target material and a backing plate (hereinafter, referred to as a "bonding method") of the present invention. As shown in FIGS. 1A to 1E, this method is a method of bonding the target material 2 and the backing plate 3 using the bonding material 4.

As shown in Fig. 1A, a target 2 and a back plate 3 are prepared. The target material 2 is formed in a long plate shape. The length in the longitudinal direction of the target material 2 is, for example, 1000 mm or more, preferably 1500 mm or more, more preferably 2000 mm or more, still more preferably 2200 mm or more, and 4000 mm or less, preferably 3500 mm or less, It is more preferably 3200 mm or less, and still more preferably 3000 mm or less. The length of the target material 2 in the short-side direction is, for example, 100 mm or more, preferably 120 mm or more, more preferably 130 mm or more, still more preferably 150 mm or more, and 2000 mm or less, preferably 1000 mm or less, It is more preferably 500 mm or less, and even more preferably 300 mm or less. Furthermore, the length in the long-side direction and the length in the short-side direction may be the same or different. In addition, the thickness of the target material 2 is, for example, 5 mm or more and 40 mm or less, preferably 10 mm or more and 30 mm or less, and more preferably 12 mm or more and 25 mm or less. In the present invention, even when a target material for a large flat panel display is used, it is possible to improve the bonding rate or reduce the maximum defect area of the entire bonding area.

In addition, the aspect ratio of the sputtering target's length in the long-side direction to the short-side length (length in the long-side direction/length in the short-side direction) is 1 or more and 30 or less, preferably 5 or more and 25 or less, and more It is preferably 6 or more and 20 or less, more preferably 7 or more and 18 or less, and particularly preferably 8 or more and 15 or less. According to this, although the sputtering target has an elongated shape, it is easy to obtain the effect of the reversing step, and it is possible to manufacture a sputtering target with a high bonding rate and a small maximum defect area.

The target 2 has a sputtering surface 2a on the upper surface. Viewed from the upper surface, the target material 2 has a first end edge 21 and a second end edge 22 corresponding to the long sides. The first end edge 21 and the second end edge 22 are formed along the long side direction of the target 2, and the first end edge 21 and the second end edge 22 are arranged to face each other in the short side direction of the target 2.

The target material 2 has a surface (bonding surface) to be bonded to the back plate on the back side of the sputtering surface 2a that becomes the upper surface. The size of the joint surface is usually substantially the same as the size of the target material 2. However, it may be higher than that of the target material 2 by removing burrs generated on the joint surface during machining, or by removing corners that cause abnormal discharges. The area (length in the long-side direction×length in the short-side direction, the area in a plan view when there is an R portion) is small. The area of the bonding surface may be generally 95% or more of the area of the target material 2, preferably 98% or more, and more preferably 99% or more of the size.

During the sputtering of the target material 2, the inert gas ionized by the sputtering collides with the sputtering surface 2a. The sputtering surface 2 a collided by the self-ionized inert gas knocks out the target atoms contained in the target 2. The knocked-out atoms are accumulated on the substrate arranged opposite to the sputtering surface 2a, and a thin film is formed on the substrate.

The material for the target 2 is not particularly limited as long as it is a material containing ceramics or sintered bodies, such as metals or alloys, oxides, nitrides, etc., which are generally used for film formation by the sputtering method, as long as they correspond to the application or purpose. Just choose the target material appropriately. For example, it can be selected from the group consisting of metals such as aluminum, copper, chromium, iron, tantalum, titanium, zirconium, tungsten, molybdenum, niobium, indium, silver, cobalt, ruthenium, platinum, palladium, nickel, and alloys of these metals. The materials in the group, or tin-doped indium oxide (Indium-doped Tin Oxide, ITO), aluminum-doped zinc oxide (Aluminum-doped Zinc Oxide, AZO), gallium-doped zinc oxide (Gallium-doped Zinc Oxide, GZO), In- Ga-Zn series composite oxide (Indium Gallium Zinc Oxide, IGZO) is produced. The material constituting the target material 2 is not limited to these materials. For example, as the material in the target 2 for the electrode or wiring material, aluminum or aluminum alloy is preferable, and it is particularly preferable to use aluminum with a purity of 99.99% or more, more preferably 99.999% or more, and use these aluminum as the parent material. Materials of aluminum alloy (Al-Cu, Al-Si, Al-Cu-Si). High-purity aluminum has a relatively large linear thermal expansion coefficient, so it is easy to warp due to heat received during sputtering, and peel off from the back plate. However, according to the present invention, the bonding rate can be improved and the maximum defect area can be reduced. Prevent peeling from the backplane.

The back plate 3 is formed in a long plate shape. The length in the longitudinal direction of the back plate 3 is, for example, 1000 mm or more and 4500 mm or less, preferably 1500 mm or more and 4000 mm or less, more preferably 2000 mm or more and 3500 mm or less, and still more preferably 2500 mm or more and 3200 mm. mm or less. The length of the short side direction of the back plate 3 is, for example, 100 mm or more and 2000 mm or less, preferably 150 mm or more and 1200 mm or less, more preferably 180 mm or more and 750 mm or less, and still more preferably 200 mm or more, 350 mm or more. mm or less. Here, let one direction of the short side direction of the back plate 3 be the first direction D1, and let the other direction of the short side direction of the back plate 3 and the direction opposite to the first direction D1 be the second direction D2.

The back plate 3 has a bonding area 30 (indicated by hatching) on the main surface 3a of the upper surface. The bonding area 30 is an area where the target 2 should be bonded. The shape of the bonding area 30 corresponds to the shape of the target 2. That is, the size of the bonding area 30 and the size of the bonding surface of the target 2 are preferably substantially the same as the size of the target 2.

Viewed from the upper surface, the joining area 30 has a first end edge 31 and a second end edge 32 corresponding to the long sides. The first end edge 31 and the second end edge 32 are formed along the long side direction of the back plate 3, and the first end edge 31 and the second end edge 32 are arranged to face each other in the short side direction of the back plate 3. The second end edge 32 is located in the first direction D1 of the first end edge 31.

The back plate 3 includes conductive materials, including metals or alloys thereof. Examples of metals include copper, copper alloys, aluminum, aluminum alloys, titanium, stainless steel (SUS), and the like.

The bonding surface of the target material 2 and the bonding area 30 of the backing plate 3 are preferably flat. From the viewpoint of easily reducing the slippage or the maximum defect area when the target material 2 is slid or moved back, the flatness is 1.0 mm or less. It is preferably 0.5 mm or less, and more preferably 0.3 mm or less. The so-called flatness is a numerical value indicating the smoothness (uniformity) of a plane, and refers to the amount of skew from a geometrically correct plane of a flat body. In addition, from the viewpoint of preventing the flow of the bonding material on the bonding area 30 of the backing plate 3 during bonding, the backing plate 3 only has to be substantially parallel to the main surface 3a of the upper surface and the back surface, and preferably parallel. From the viewpoint of easily applying force to the target 2 when the target 2 is slid or moved back, the sputtering surface 2a on the upper surface of the target 2 is approximately parallel to the joining surface as the back surface, and is preferably parallel. That's it.

The bonding step is performed in a state where the target material 2, the back plate 3, and the bonding material 4 are heated. As shown in FIG. 1B, the bonding material 4 is applied to the entire surface of the bonding area 30 of the back plate 3. The amount of the bonding material 4 to be applied is 1.5×10 ^-6 kg/mm ² or more, preferably 2.5×10 ^-6 kg/mm ² or more, more preferably 4.5×10 ^-6 kg/mm ² or more, and further It is more preferably 10×10 ^-6 kg/mm ² or more, and still more preferably 14×10 ^-6 kg/mm ² or more. The upper limit is not particularly limited, but from the viewpoint of the workability of the joining step, it is preferably 50×10 ^-6 kg/mm ² or less, more preferably 35×10 ^-6 kg/mm ² or less, and still more preferably 25×10 ^-6 kg/mm ² or less. The bonding material 4 includes, for example, a metal with a low melting point (for example, 723 K or less) such as solder or ferrous material, and the material of the solder is, for example, metals such as indium, tin, zinc, lead, silver, copper, bismuth, cadmium, and antimony, or alloys thereof. For example, In material, In-Sn material, Sn-Zn material, Sn-Zn-In material, In-Ag material, Sn-Pb-Ag material, Sn-Bi material, Sn-Ag-Cu material, Pb-Sn material , Pb-Ag material, Zn-Cd material, Pb-Sn-Sb material, Pb-Sn-Cd material, Pb-Sn-In material, Bi-Sn-Sb material, usually it is better to use low melting point In or In Alloy, Sn or Sn alloy and other solders. The bonding is performed at a temperature above the melting point of the bonding material 4, preferably 140°C or more, more preferably 150°C or more and 300°C or less. If the viscosity of the melted bonding material 4 is 0.5 mPa·s or more, It is preferably 1.0 mPa·s or more, more preferably 1.5 mPa·s or more, and 5 mPa·s or less, preferably 3 mPa·s or less, and more preferably 2.5 mPa·s or less, so that the bonding rate can be improved. In addition, the maximum defect area can also be reduced. In addition, before joining the target 2 and the back plate 3, the bonding surface of the target 2 and the back plate 3, or the bonding surface of the back plate 3 and the target 2 can be lubricated for lifting and the bonding material 4. Wet pretreatment (metallization treatment). Regarding the pre-treatment, rough surface processing or hairline processing, embossing and metallization can be performed by grinding or grinding. The bonding surface of the target 2 and the back plate 3 can be provided with a polished surface or a ground surface or hairline. Concave-convex surface or metallized layer such as surface, embossed surface, etc. For example, the polishing process can be performed using an abrasive material obtained by coating abrasive grains on paper or a fibrous base material, and can be performed manually or by a grinder equipped with an abrasive material. The metallization process can be implemented by coating the metallization material on the joint surface and performing ultrasonic irradiation. The metallization material can be selected from the same materials as the bonding material 4, and for example, an In material and a Sn-Zn material can be used. The thickness of the metallized layer is 1 μm or more and 100 μm or less. If it is within this range, it is easy to ensure the wettability with the bonding material 4, and it is easy to increase the bonding rate. Furthermore, the portion where the target material 2 and the back plate 3 are not bonded may be masked in advance with a heat-resistant tape, which can prevent the adhesion of the bonding material 4 or the formation of a metallized layer.

As shown in FIG. 1C, after that, the first end edge 21 of the target 2 is set on the first end edge 31 side of the bonding area 30 of the back plate 3. At this time, it is preferable to arrange the first end edge 21 of the target 2 so as to be superimposed on the bonding area 30.

As shown in FIG. 1D, after that, the first end edge 21 of the target 2 is moved from the first end edge 31 side of the bonding area 30 of the back plate 3 to the second end edge of the bonding area 30 of the back plate 3 As far as the position of 32 is reached, the target 2 is slidably moved in the first direction D1 along the main surface 3 a of the back plate 3.

As shown in FIG. 1E, thereafter, the target 2 is slid and moved in the second direction D2 along the main surface 3 a of the back plate 3, so that the bonding area 30 of the target 2 and the back plate 3 is aligned. After that, precisely align the positions of the target 2 and the back plate 3, and in a state where the two are fixed by placing a weighing mound, or clamped by a vise or clamp, or a clamp, the target 2 and the back plate 3 are fixed. The joined body of the back plate 3 is cooled, and the joining material 4 is solidified. Thereby, the target material 2 and the backing plate 3 are joined by the joining material 4, and the sputtering target 1 is manufactured.

According to the joining method, the target material 2 is slid in the first direction D1 relative to the back plate 3 and then moved back in the second direction D2, thereby aligning the joining area 30 of the target material 2 and the back plate 3. In this way, the target 2 is not only slid, but also moved back, whereby the bonding material 4 can be pulled back in the second direction D2 by the surface tension along with the back movement of the target 2, and the target 2 and the back plate 3 can be reduced. There is no space between the joining material 4, and the unjoined part can be reduced.

Therefore, in the bonding of the target 2 and the back plate 3, the bonding rate can be improved, and the maximum defect area can be reduced. The so-called bonding rate refers to the ratio of the bonding area of the bonding portion between the target 2 and the back plate 3 to the area of the bonding region 30. The junction area specifically refers to the total area of a portion where a region where no bonding material is not detected when viewed in the thickness direction of the bonding layer between the target material 2 and the back plate 3. The maximum defect area refers to the area of the portion where the bonding material 4 does not exist between the target material 2 and the backing plate 3 and the area becomes the largest. Here, the portion where the bonding material 4 does not exist (unbonded portion) refers to the area where the bonding material does not exist in the thickness direction of the bonding layer, that is, the space, or the detection of foreign matter other than the bonding material such as oxide of the bonding material The part of is not only the entire thickness direction of the bonding layer, but also may be included in the case where a part of the bonding material is not present. For example, as shown in FIG. 2A, the bonding layer 6 existing between the target material 2 and the backing plate 3 may be part of the thickness direction of the bonding layer 6 (the vertical direction in the figure), and the bonding material 4 may not be present. Or, as shown in FIG. 2B, the bonding layer 6 existing between the target 2 and the back plate 3 may also be in the thickness direction of the bonding layer 6 (up and down direction in the figure). Space S of bonding material 4. The region where there is no bonding material can be detected by the measurement method described later. For example, in the case of measuring using ultrasonic flaw detection, if there is a space where the bonding material does not exist in the bonding layer, the injected ultrasonic waves are reflected by the interface, so that the defect can be identified.

Therefore, according to the present invention, the bonding rate between the target 2 and the backing plate 3 can be increased, and the maximum defect area can be reduced. Therefore, it is possible to manufacture a sputtering target 1 in which a portion with low bonding strength is not easily formed and the target 2 is not easily peeled off.

In this way, in the present invention, it is found that by focusing on both the bonding rate and the maximum defect area, the target 2 becomes less likely to peel off during sputtering. Specifically, regarding the bonding rate, if the bonding rate increases, the area where the bonding material 4 does not exist can be reduced, and the target material 2 becomes less likely to peel off.

On the other hand, with regard to the maximum defect area, if the maximum defect area becomes larger, a large defect occurs locally, the electrical and thermal conductivity of this part become poor, heat concentration is generated in this part, and the bonding material 4 is melted. This target material 2 becomes easy to peel off. Therefore, if the maximum defect area is reduced, large defects are not locally generated, and the target material 2 becomes less likely to peel off.

In addition, according to the joining method, the target material 2 is slidably moved relative to the back plate 3 in the short-side direction of the back plate 3. Accordingly, in the long-sized target material 2 and the back plate 3, the moving distance of the target material 2 relative to the back plate 3 can be reduced, and the work time can be shortened.

Preferably, before the coating step of the bonding material 4 (refer to FIG. 1B ), as shown in FIG. 1A, a plurality of wires 5 are arranged on the main surface 3 a of the back plate 3. The material of the wire 5 is, for example, stainless steel or copper. Specifically, the wire 5 is arranged in the joining area 30 so as to extend in the first direction D1, and the plurality of wires 5 are arranged at intervals in a direction orthogonal to the first direction D1. In addition, during the movement of the target 2 in the first direction D1 and the second direction D2, the target 2 is slidably moved on the line 5. According to this, since the target 2 is slid on the wire 5, the target 2 can be easily moved. As long as the target 2 can be moved in parallel, the number of lines 5 to be arranged is not particularly limited, but it is preferably five or more, more preferably seven or more, and still more preferably nine or more. Furthermore, by setting the wire 5 as a spacer, the thickness of the bonding layer formed by the bonding material 4 can be made constant. The thickness of the bonding layer is usually 0.03 mm or more and 1.5 mm or less, preferably 0.05 mm or more and 1 mm or less, more preferably 0.08 mm or more and 0.5 mm or less, and still more preferably 0.1 mm or more and 0.35 mm or less. The deviation of the thickness of the bonding layer, that is, the difference between the maximum thickness and the minimum thickness of the bonding layer is preferably 0.5 mm or less, more preferably 0.4 mm or less, still more preferably 0.3 mm or less, particularly preferably 0.25 mm or less. The variation in the thickness of the bonding layer can be calculated by measuring the thickness of the bonding layer at a plurality of arbitrary points (preferably four or more points) around the bonding layer of the sputtering target 1. The thickness of the bonding layer can be obtained by measuring the bonding layer from the side using, for example, a ruler, a vernier caliper, a depth gauge, or the like. In addition, the deviation of the thickness of the bonding layer represents approximately the same value as the deviation of the height of the target material 2 in the sputtering target 1 from the reference surface (for example, the bonding surface of the back plate). A gauge or the like measures the height at a plurality of arbitrary points of the target material 2 in the sputtering target 1 to obtain it. If the bonding rate of the sputtering target 1 is increased, and the size of the largest defect area in the unbonded part is reduced, and then the thickness deviation of the bonding layer is reduced, it can become a sputtering target that is less likely to peel off. .

The diameter of the wire 5 is preferably 0.05 mm or more and 0.5 mm or less, more preferably 0.1 mm or more and 0.3 mm or less. According to this, the wire 5 is less likely to be broken, and variations in the thickness of the bonding layer can be reduced.

Preferably, between the moving step of the target 2 in the first direction D1 (refer to FIG. 1D) and the moving step of the target 2 in the second direction D2 (refer to FIG. 1E), toward the first of the bonding area 30 of the back plate 3 The joining material 4 is supplemented on the side of the one end edge 31. Specifically, in the state shown in FIG. 1D, the bonding material 4 is added to the part of the bonding area 30 that is not covered by the target material 2. Accordingly, since the bonding material 4 is replenished toward the first end edge 31 side of the bonding area 30 of the back plate 3, it is possible to move toward the first end edge of the bonding area 30 where the bonding material 4 tends to become insufficient as the target 2 moves. The 31-side supplementary bonding material 4 can further increase the bonding rate and further reduce the maximum defect area. The amount of the bonding material 4 to be supplemented is preferably 0.5×10 ^-6 kg/mm ² or more, more preferably 0.8×10 ^-6 kg/mm ² or more, and still more preferably 1.0×10 ^-6 kg/mm ² or more . The upper limit is not particularly limited, but from the viewpoint of the workability of the joining step, it is preferably 20×10 ^-6 kg/mm ² or less, more preferably 10×10 ^-6 kg/mm ² or less, and still more preferably 7.0×10 ^-6 kg/mm ² or less.

Preferably, in the step of moving the target material 2 in the first direction D1, as shown in FIG. 1D, when the first end edge 21 of the target material 2 has been moved to exceed the second end edge of the bonding area 30 of the back plate 3 32, if the distance in the first direction D1 from the second end 32 of the bonding area 30 of the back plate 3 to the first end 21 of the target 2 is set to A, the first The width of the direction D1 is set to W, then 0.03≦A/W<1.0, preferably 0.05≦A/W<0.8, more preferably 0.06<A/W<0.6. Specifically, 10 mm≦A≦150 mm, preferably 12 mm≦A≦120 mm, and preferably 150 mm≦W≦300 mm. Accordingly, the moving distance of the target 2 relative to the back plate 3 can be reduced, the bonding rate can be improved, and the maximum defect area can be reduced.

Preferably, in the step of moving the target material 2 in the first direction D1, as shown in FIG. 1C, when the first end edge 21 of the target material 2 has been arranged on the first end edge 31 of the bonding area 30 of the back plate 3 Side, if the distance in the first direction D1 from the first end edge 31 of the bonding area 30 of the back plate 3 to the first end edge 21 of the target 2 is set to B, the first direction D1 of the bonding area 30 The width of B/W is set to W, the lower limit of B/W is 0 or more, preferably 0.03 or more, more preferably 0.10 or more, even more preferably 0.20 or more, and the upper limit of B/W is less than 2.0, preferably It is 1.5 or less, more preferably 1.2 or less, still more preferably 1.0 or less, particularly preferably 0.8 or less. Specifically, 0 mm≦B≦300 mm, preferably 5 mm≦B/W≦200 mm, and preferably 150 mm≦W≦300 mm. Accordingly, the moving distance of the target 2 relative to the back plate 3 can be reduced, the bonding rate can be improved, and the maximum defect area can be reduced.

From the viewpoint of preventing the unnecessary movement and separation of the bonding material already installed in the bonding area, the speed of the movement (sliding) in the first direction D1 or the movement (returning) in the second direction D2 of the target 2 is preferably 100 mm/sec or less, more preferably 50 mm/sec or less, and still more preferably 30 mm/sec or less. The lower limit is not particularly limited, but from the viewpoint of productivity, the lower limit is 1 mm/sec or more, preferably 5 mm/sec or more.

It is preferable to arrange the end edge of the target material 2 on the first end edge side of the bonding area of the backing plate, and/or to the stage where the movement (sliding) of the target material 2 in the first direction D1 has ended , The step of providing vibration from the upper surface of the target material 2 and removing air that may be present in the bonding layer is performed. As a method of imparting vibration, a method of tapping the upper surface of the target material or a method of applying vibration in a direction parallel to the upper surface of the target material 2 can be performed. Regarding the range of vibration applied, at the stage where the end edge of the target material 2 has been arranged on the first end edge side of the bonding area of the back plate, it is preferable to face the gap between the target material and the back plate. Vibration is applied to the entire bonding layer (the bonding area where the target is placed), and the movement (reversing) in the second direction D2 is performed at the stage when the movement (sliding) in the first direction D1 of the target 2 has ended. Vibration is applied to the front head. Regarding the direction in which vibration is applied, it is preferable to apply vibration to the outer periphery from the center of the bonding layer between the target and the back plate (the bonding area where the target is placed). Thereby, the air existing in the bonding layer can be removed, so the bonding rate can be improved, and the maximum defect area can be reduced. Especially at the stage where the end edge of the target material 2 has been arranged on the first end edge side of the bonding area of the back plate, the bonding layer between the target material and the back plate (where the target material is placed There is a high possibility of air accumulation in the bonding area), so by providing an air removal step, the effect of increasing the bonding rate and reducing the maximum defect area can be further achieved.

Next, the manufacturing method of the sputtering target 1 is demonstrated. As described above, the target material and the back plate are joined using the joining method to produce a sputtering target.

In the manufacturing method of the present invention, the target material can be processed into a substantially plate shape, and the method of processing into a plate shape is not particularly limited. Regarding a target made from a metal material, for example, a rectangular, cylindrical, or cylindrical target obtained by melting and casting can be subjected to plastic processing such as rolling, extrusion, and forging, and then cutting or Grinding, grinding and other mechanical processing (cutting processing, reamer processing, end mill processing, etc.) to produce a target with a desired size or surface condition. The rolling process is described in, for example, Japanese Patent Laid-Open No. 2010-132942 or International Publication No. 2011/034127. The extrusion process is described in, for example, Japanese Patent Application Laid-Open No. 2008-156694. Forging processing is described in, for example, Japanese Patent Laid-Open No. 2017-150015, Japanese Patent Laid-Open No. 2001-240949, or Aluminum Technology Handbook (written by the Aluminum Technology Handbook Editorial Committee of the Light Metal Association, Kallos publishing, new edition, 1996) Issued on November 18). Using the bonding method of the invention of this application, a machined plate-shaped target is bonded to a backing plate to produce a sputtering target. In addition, as a target material, a target material that has been machined to a predetermined size can also be purchased and used, or a target material obtained by removing the back plate from the following sputtering target and then removing the bonding material can be used as the target material. The sputtering target is a sputtering target that does not meet the product specifications when an abnormality occurs during the joining with the back plate during the manufacturing step of the sputtering target 1. Furthermore, if necessary, the surface of the sputtering target after joining may be subjected to finishing processing by cutting processing or polishing processing.

In the manufacturing method of the sputtering target of this invention, since the joining method of this invention is used, the sputtering target with improved quality can be obtained.

Next, the sputtering target 1 bonded by the bonding method described above will be described.

As shown in FIG. 1E, the sputtering target 1 has a back plate 3 and a target material 2 bonded to the bonding area 30 of the back plate 3 via a bonding material 4.

FIG. 3A is a schematic diagram showing the state of the bonding material 4 between the target material 2 and the back plate 3 of the sputtering target 1. In FIG. 3A, the defective part (unbonded part) 10 where the bonding material 4 does not exist in the bonding area 30 is indicated by hatching. The measurement of the defect portion 10 can be performed by, for example, ultrasonic flaw detection or transmission X-ray observation. However, when the area of the joint area is large, ultrasonic flaw detection is preferable. As an ultrasonic flaw detection device, FS LINE or FS LINE Hybrid manufactured by Hitachi Power Solutions Co., Ltd., or phased array ultrasonic flaw detection imaging device PDS or ultrasonic flaw detection imaging device manufactured by KJTD Co., Ltd. can be used Chemical device ADS71000 and so on. In addition, when the bonding rate or the maximum defect area is determined by ultrasonic flaw detection, a suspected defect sample provided with a flat-bottomed hole of a predetermined size is used, and the ultrasonic wave used to identify the reflected wave from the defect needs to be adjusted. Testing conditions. The ultrasonic wave propagation speed is different among the raw materials, so the suspected defective sample should preferably be made of the same raw material as the raw material on the ultrasonic injection side of the sputtering target 1 after the measurement sensitivity and the condition surface are consistent. In addition, the distance between the ultrasonic injection surface of the suspected defective sample and the bottom surface of the flat-bottomed hole is preferably equal to the distance between the ultrasonic injection surface of the sputtering target 1 and the bonding layer.

As shown in FIG. 3A, the area of the portion between the target 2 and the back plate 3 where the defect site 10 is not detected is 97% or more with respect to the area of the bonding region 30. That is, the joining ratio is 97% or more, preferably 98% or more, and more preferably 98.5% or more. In addition, the maximum defect area of the defect site 10 in the bonding layer between the target 2 and the back plate 3 relative to the area of the bonding region 30 is 2% or less, preferably 1% or less, more preferably 0.6% or less, and It is more preferably 0.3% or less, still more preferably 0.1% or less, and particularly preferably less than 0.05%. For example, when the area of the bonding area 30 is 200 mm×2300 mm, the maximum defect area is 2000 mm ² or less.

According to the present invention, it is possible to manufacture the sputtering target 1 capable of improving the bonding rate and reducing the maximum defect area, and the target material 2 is not easily peeled off. Preferably, the length of the target 2 is 1000 mm or more and 4000 mm or less, which can be used in a long-size sputtering target 1 and the target 2 is not easy to peel off.

The upper limit of the bonding rate is 100% at the maximum, but from the point of view that sputtering targets that have become out-of-specification due to abnormalities during bonding, or that sputtering targets used in sputtering are easily peeled off when the backing plate is removed In other words, the bonding rate is preferably 99.99% or less, more preferably 99.95% or less, and still more preferably 99.90% or less. Furthermore, the sputtering target is heated to a temperature higher than the melting point of the bonding material used for bonding to soften or melt the bonding layer, and the bonding layer is physically destroyed if necessary, thereby allowing the sputtering target to be sputtered. Peel off the target. The lower limit of the ratio of the maximum defect area to the area of the bonding region 30 is not particularly limited, but from the viewpoint of further suppressing the warpage of the sputtering target caused by the heat generated during sputtering, the lower limit is It is 0.001% or more, preferably 0.003% or more, more preferably 0.005% or more, and still more preferably 0.008% or more. If the lower limit of the ratio of the maximum defect area is greater than or equal to the above, the deformation of the target due to heat during sputtering is alleviated by the local defect, and the warpage of the sputtering target is reduced.

In contrast, FIG. 3B shows the sputtering target 100 of the comparative example when the target material is joined to the back plate only by sliding the target material in the first direction D1, and shows the effect of the joining material between the target material and the back plate status. As shown in FIG. 3B, compared with FIG. 3A, the ratio of the defect site|part 10 is large, the joining rate becomes small, and the maximum defect area of the defect site|part 10 becomes larger. In this way, if only the sliding of the target material, the bonding state of the target material and the backing plate deteriorates, and as a result, the target material becomes easy to peel off. In particular, if it is a sputtering target with a long target material or a large bonding area, the easiness of peeling of the target material becomes remarkable.

In a suitable embodiment of the sputtering target of the present invention, a wire may be provided between the target and the backing plate, that is, the bonding layer. It is preferable that a plurality of wires are arranged at intervals in the direction orthogonal to the longitudinal direction of the target material 2, and it is more preferable that the wires are arranged at equal intervals. In addition, the ratio of the number of wires provided in the bonding layer to the length of the target 2 (number of wires (number)/length of the target 2 (mm)) is 0.002 or more and 0.008 or less, preferably 0.003 or more, 0.007 Below, it is more preferably 0.003 or more and 0.006 or less. By having wires in the bonding layer as described above, it is easy to ensure the thickness of the bonding layer, and it is easier to fix the thickness of the bonding layer. Therefore, it is possible to increase the bonding rate of the sputtering target 1 and reduce the largest defects. Area, the sputtering target 1 that the target 2 is not easy to peel off.

(Example 1) A rolled plate made of high-purity aluminum with a purity of 99.999% was prepared, and a gate-shaped cutting machine was used for cutting to produce a target of 200 mm×2300 mm×t16 mm (the area of the bonding area is 4.5×10 ⁵ mm ² ), and prepare a backplane containing oxygen-free copper with a purity of 99.99%. The width (the so-called width of the target) W in the first direction D1 of the bonding area in the step of moving the target is 200 mm.

On the hot plate, the target material and the back plate are heated to a temperature higher than the melting point of the bonding material.

The Sn-Zn-In alloy material is melted on the bonding surface of the target material, and the In material is melted on the bonding surface of the back plate, and the bonding surface of the two materials is metalized with an ultrasonic soldering iron. After the metallization process, use a spatula to remove the Sn-Zn-In alloy material, the oxide of In material, or the excess Sn-Zn-In alloy material and In material on the bonding surface of the target material and the bonding surface of the back plate. .

In the direction perpendicular to the longitudinal direction of the back plate, ten SUS wires with a diameter of 0.2 mm are arranged at approximately equal intervals on the joining surface of the metalized back plate, and the In material for joining is added from The upper part of the SUS wire is coated on the joint surface. The amount of the In material for bonding applied on the bonding surface from above the SUS wire was 7.80 kg.

Change the direction of the target material to the direction in which the bonding surface of the target material and the bonding surface of the back plate face parallel, and set the long side side of the target material to overlap the long side side of the back plate on the line (target Material setting position B=0), slide the target material in the direction of the predetermined joining position. Slide the target so that the ratio A/W of the target beyond the predetermined bonding position (excess amount) A to the width W of the target becomes 0.1625, and tap the target in the second direction D2 from above. Move the front head in the direction (returning) while knocking out air.

After that, the target is slid to the predetermined bonding position. Fine adjustment of the target material position is performed so that the target material becomes a predetermined bonding position, a weight is set on the target material to fix the target material and the backing plate, and the bonded body is cooled to produce a sputtering target. Regarding the bonding layer of the sputtering target, the thickness of the bonding layer at six locations on the both ends and the center of the long side was measured with a vernier caliper, and the difference between the maximum and minimum thickness of the bonding layer was found to be 0.2 mm.

After the In material is solidified, the warpage caused by the difference between the linear expansion coefficient of the target and the back plate is corrected to obtain the target. The FS-LINE ultrasonic flaw detection device manufactured by Hitachi Power Solutions Co., Ltd. was used to measure the bonding rate and the maximum defect area.

The bonding rate and the maximum defect area are measured by the following procedure. First, prepare a suspected defect sample. The suspected defect sample is a rolled plate made of high-purity aluminum with a purity of 99.999%. After plane cutting is performed on both sides of the rolled plate to form parallel surfaces, the projected area diameter ( Diameter) φ is 2 mm flat-bottomed hole, φ is 6 mm countersunk hole. At this time, the distance from the surface of the sample with no holes to the flat-bottomed hole was made the same as the thickness of the target material.

As a pre-measurement preparation, install the ultrasonic flaw detector "I3-1006-TS-80 mm" (frequency 10 MHz, focal distance 80 mm) on the measuring device.

Then, the suspected defective sample is set in the measuring device, the focus is on the counterbore, and the measurement is started. First, confirm the counterbore, and then confirm the flat-bottomed hole with the focus on the counterbore. After that, focus on the flat-bottomed hole. In this state, perform ultrasonic flaw detection (C-scan), and adjust the sensitivity so that the detected flat-bottom aperture matches the flat-bottom aperture of the suspected defective sample. As a measurement condition, the gain (sound wave intensity) becomes 12 dB , Make the measurement interval become 2 mm interval, make the defect level become 38. In this way, the sensitivity of the program is adjusted in such a way that the intensity of the reflected echo is 38 or more as a defect to be detected.

Then, the suspected defective sample is taken out from the measuring device, and the sputtering target joined is set in the measuring device so that the target side becomes the upper surface. Set the height of the ultrasonic flaw detector so that the focal position height of the program made in the suspected defect sample becomes the bonding layer of the sputtering target, and set the scanning range of the ultrasonic flaw detector so that the measurement field becomes the entire bonding surface. Join the sputtering target for ultrasonic flaw detection (C-scan). Ultrasonic waves are injected from the side of the target.

Use the analysis program attached to the ultrasonic flaw detection device to analyze the obtained data to obtain information on the joint rate and the largest defect area. After that, surface finishing is performed by grinding or sandblasting.

Table 1 shows the results of the sputtering targets joined in the manner of Example 1.

(Example 2 to Example 12) Set the amount of bonding material, wire diameter, bonding material type, target setting position B, and excess amount A shown in Table 1. After setting the target on the bonding surface of the back plate, tap the target and Except for substantially the entire surface of the bonding layer between the back plates (the contact portion, the bonding area where the target is placed), and the removal of air in the bonding layer, the embodiment 2 is carried out in the same manner as the embodiment 1 ~ Example 12. In Examples 2 to 12, in the same manner as in Example 1, the target was slid in the first direction and then moved back in the second direction. In the same manner as in Example 1, the difference between the maximum value and the minimum value of the thickness of the bonding layer of the sputtering target was determined, and the result was 0.2 mm to 0.4 mm. (Example 13) In Example 13, the bonding surface of the back plate was metallized with Sn-Zn material, Sn-Zn (containing 9% Zn) was used as the bonding material, and the air in the bonding layer was not knocked out. Otherwise, a sputtering target was produced in the same manner as in Example 2, and the bonding rate and the maximum defect area were determined. (Comparative example 1) In Comparative Example 1, only the target was slid in the first direction, and the target was not moved back in the second direction, except that it was implemented in the same manner as in Examples 2 to 12. (Comparative example 2) In Comparative Example 2, neither sliding or reversing of the target nor knocking out of air was carried out, and neither sliding nor reversing of the target was performed, and a sputtering target was produced under the conditions described in Table 1.

[Table 1] Set the amount of bonding material [kg] Replenishment material amount [kg] Line type Wire diameter [mm] Type of bonding material Target setting position B [mm] B/W Air removal Target excess A [mm] A/W Joining rate [%] Maximum defect area [mm ² ] Maximum defect area/area of joint area Example 1 7.80 0 SUS 0.2 In 0 0 Have 32.5 0.1625 98.31 1989 0.44% Example 2 7.84 0 SUS 0.2 ln 10 0.05 Have 32.5 0.1625 98.80 1584 0.35% Example 3 7.94 0.52 SUS 0.2 In 10 0.05 Have 32.5 0.1625 99.09 1380 0.31% Example 4 6.70 2.40 SUS 0.2 In 10 0.05 Have 32.5 0.1625 99.66 400 0.09% Example 5 7.62 1.50 SUS 0.2 In 10 0.05 Have 15 0.075 99.11 524 0.12% Example 6 7.88 1.78 SUS 0.2 In 10 0.05 Have 50 0.25 99.18 580 0.13% Example 7 8.32 2.00 SUS 0.2 In 10 0.05 Have 100 0.5 99.62 384 0.09% Example 8 8.12 0.62 SUS 0.2 In 50 0.25 Have 32.5 0.1625 99.65 164 0.04% Example 9 8.12 0.42 SUS 0.2 In 100 0.5 Have 32.5 0.1625 99.88 48 0.01% Example 10 7.04 1.12 SUS 0.2 In 150 0.75 Have 32.5 0.1625 99.08 108 0.02% Example 11 7.20 0 SUS 0.1 In 10 0.05 Have 32.5 0.1625 99.39 968 0.22% Example 12 8.42 0 SUS 0.3 In 10 0.05 Have 32.5 0.1625 99.18 1192 0.26% Example 13 7.56 0 SUS 0.2 Sn-Zn 10 0.05 no 32.5 0.1625 99.00 1341 0.30% Comparative example 1 8.00 0 SUS 0.2 In 10 0.05 Have 0 0 90.70 11628 2.58% Comparative example 2 8.64 0 SUS 0.2 In 200 1 no 0 0 96.27 1948 0.43%

In Table 1, the so-called "amount of bonding material provided" refers to the amount of bonding material applied to the bonding area 30 of the back plate 3 in FIG. 1B. The "replenishment amount of bonding material" refers to the amount of bonding material that is replenished toward the bonding area 30 of the back plate 3 through which the target material has passed in FIG. 1D. The "line type" refers to the type of the line 5 provided in the bonding area 30 of the back plate 3 in FIG. 1A, and stainless steel is used. The so-called "wire diameter" refers to the diameter of the wire 5. The "type of bonding material" refers to the material of the bonding material, and solder containing In or Sn-Zn is used. The so-called "target material setting position" refers to the position where the target material 2 is set in FIG. 1C, and is from the first end edge 31 of the bonding area 30 of the back plate 3 to the first end edge 21 of the target material 2 The distance B in the first direction D1. The so-called "air knock-out" refers to the stage where the end edge of the target 2 has been arranged on the first end side of the bonding area of the back plate in FIG. 1C. In addition, in FIG. 1D, the second end of the target 2 When the movement (sliding) in one direction D1 has ended, the upper surface of the target 2 is knocked to remove the air between the target 2 and the back plate 3. The so-called "target excess" refers to the amount of target material 2 exposed from the bonding area 30, and is from the second end 32 of the bonding area 30 of the back plate 3 to the first end of the target material 2 in FIG. 1D The distance A from the edge 21 in the first direction D1. The so-called "bonding material supplement" refers to whether to supplement the bonding material.

As can be seen from Table 1, in Examples 1 to 13, the joining ratio is 97% or more, and the maximum defect area is 2000 mm ² or less (that is, the ratio of the maximum defect area to the area of the joining region is 0.6% the following). In Examples 1 to 13, the target material became difficult to peel off, and even after use in a sputtering apparatus, peeling of the target material was not confirmed.

In contrast, in Comparative Example 1, the bonding rate was 90.70%, and the maximum defect area was 11628 mm ² , and in Comparative Example 2, the bonding rate was 96.27%, and the maximum defect area was 1948 mm ² . In Comparative Example 1 and Comparative Example 2, the target material became easy to peel off.

In addition, the present invention is not limited to the above-mentioned embodiments, and design changes can be made within the scope not departing from the gist of the present invention.

In the above embodiment, the target material and the back plate are formed in a long size, but the short side and the long side of the target material and the back plate may have the same length.

1, 100: Sputtering target 2: target 2a: Sputtering surface 3: backplane 3a: main side 4: Bonding material 5: line 6: Bonding layer 10: Defects 21, 31: first edge 22, 32: second edge 30: Joint area A, B: distance D1: First direction D2: second direction S: Space W: width

Fig. 1A is an explanatory diagram showing an embodiment of a method of joining a target to a backing plate of the present invention. FIG. 1B is an explanatory diagram showing an embodiment of the method of joining the target material and the backing plate of the present invention. Fig. 1C is an explanatory diagram showing an embodiment of a method of joining a target material to a backing plate of the present invention. FIG. 1D is an explanatory diagram showing an embodiment of the method of joining the target material and the backing plate of the present invention. FIG. 1E is an explanatory diagram showing an embodiment of the method of joining the target material and the backing plate of the present invention. 2A is a schematic cross-sectional view showing a state in which no bonding material is present in the bonding layer existing between the target material and the backing plate. 2B is a schematic cross-sectional view showing a state in which no bonding material is present in the bonding layer existing between the target material and the backing plate. 3A is a schematic view showing the state of the bonding material between the target material and the back plate of the sputtering target of the present invention. 3B is a schematic diagram showing the state of the bonding material between the target material and the back plate of the sputtering target of the comparative example.

2: target

2a: Sputtering surface

3: backplane

3a: main side

4: Bonding material

21, 31: first edge

22, 32: second edge

30: Joint area

B: distance

D1: First direction

D2: second direction

W: width

Claims (10)

A sputtering target includes: Backplane; and The target material is joined to the joining area of the back plate via a joining material; The bonding area of the bonding portion between the target and the back plate is 97% or more with respect to the area of the bonding region, The maximum defect area of the portion between the target material and the backing plate where there is no bonding material is 0.6% or less with respect to the area of the bonding region. The sputtering target according to claim 1, wherein the length of the target material is 1000 mm or more and 4000 mm or less. A bonding method, which is a method of bonding a target material and a backing plate using a bonding material, includes: The step of applying a bonding material to the bonding area of the main surface of the back plate that should be bonded to the target material; With the end edge of the target material moving from the first end edge side of the joining area of the back plate to the joining area beyond the back plate in the first direction and the first end The step of sliding the target material in the first direction along the main surface of the back plate until the position of the second end edge facing each other; and The target material is slidingly moved along the main surface of the back plate in a second direction opposite to the first direction, so that the bonding area of the target material and the back plate is consistent step. The bonding method according to claim 3, wherein the target material and the back plate are formed in a long size, The end edge of the target material is formed along the long side direction of the target material, The first end edge and the second end edge of the joining area of the back plate are formed along the long side direction of the back plate and face each other in the short side direction of the back plate, The target is slidably moved relative to the back plate in the short side direction of the back plate. The joining method according to claim 3 or claim 4, which includes a step of arranging a plurality of wires on the main surface of the back plate before the step of coating the joining material, During the movement of the target material in the first direction and the second direction, the target material is slid and moved on the line. The joining method according to claim 5, wherein the diameter of the wire is 0.05 mm or more and 0.5 mm or less. The joining method according to any one of claims 3 to 6, which includes between the step of moving the target material in the first direction and the step of moving the target material in the second direction , The step of supplementing the joining material toward the first end edge side of the joining area of the back plate. The joining method according to any one of claims 3 to 7, wherein in the step of moving the target material in the first direction, when the end edge of the target material has been moved beyond When the second end edge of the bonding area of the back plate is positioned, if it is from the second end edge of the bonding area of the back plate to the end edge of the target material The distance in the first direction is set to A, and the width in the first direction of the joining area is set to W, then 0.03≦A/W<1.0. The joining method according to any one of claims 3 to 7, wherein in the step of moving the target material in the first direction, when the end edge of the target material has been arranged at all When the first end edge of the joining area of the back plate is on the side of the first end edge, if all the distances from the first end edge of the joining area of the back plate to the end edge of the target The distance in the first direction is set to B, and the width of the bonding area in the first direction is set to W, then 0≦B/W<2.0. A method for manufacturing a sputtering target, which uses the joining method according to any one of claims 3 to 9 to join the target and the back plate to manufacture the sputtering target.

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