TW202107599A - Wafer processing apparatus having particle sensors - Google Patents
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本發明係關於晶圓處理設備,更詳細而言,係關於一種使得能夠感測晶圓處理製程中流入的粒子並判斷晶圓的處理過程中的污染狀態的具有粒子感測器的晶圓處理設備。The present invention relates to wafer processing equipment, and more specifically, to a wafer processing with a particle sensor that enables sensing particles flowing in during the wafer processing process and judging the contamination state of the wafer during processing equipment.
半導體產業作為與電子、通訊、訊息事業部門一同實現突出發展和成長的產業,不僅是進入訊息化社會與尖端產業發展的核心要素,而且作為提高常規產業的生產率與高附加值化所需的必需的要素部件,其需求正在急劇擴大和多樣化。The semiconductor industry, as an industry that achieves outstanding development and growth together with the electronics, communications, and information business sectors, is not only a core element for entering the information society and the development of cutting-edge industries, but also as a necessity for increasing the productivity and high value-added of conventional industries. The demand for the essential components of the company is rapidly expanding and diversifying.
但是,半導體產業要求龐大的設備投資,技術本身的開發也需要大量的研發投資,具有相比銷售額的研發投資顯著高於其他產業的特徵,這是因為半導體在製品特性上是對製造過程極為敏感的製品。However, the semiconductor industry requires huge equipment investment, and the development of technology itself also requires a large amount of R&D investment. Compared with sales, R&D investment is significantly higher than other industries. This is because the characteristics of semiconductor products are extremely important to the manufacturing process. Sensitive products.
另外,半導體產業具有技術革新速度快、製品的壽命週期相比其他產業非常短的特性。In addition, the semiconductor industry has the characteristics of rapid technological innovation and the life cycle of products is very short compared to other industries.
這種半導體從最初晶圓製作到最終製成品,大致經過晶圓製造製程、晶圓處理製程、封裝件組裝製程及模組組裝製程的4種製程。From the initial wafer production to the final finished product, this kind of semiconductor roughly goes through the four processes of wafer manufacturing process, wafer processing process, package assembly process and module assembly process.
其中,就晶圓處理製程而言,一般藉助於應用了自動化的晶圓處理設備而實現。該晶圓處理設備執行在晶圓上塗覆感光液或晶圓蝕刻等多樣的晶圓處理。Among them, the wafer processing process is generally achieved by applying automated wafer processing equipment. The wafer processing equipment performs various wafer processing such as coating photosensitive liquid on the wafer or wafer etching.
不過,在這種晶圓的處理製程中,往往出現外部的粒子流入該晶圓處理設備內的情形,這會給污染度保持極低狀態的晶圓處理設備帶來致命的問題。However, in the processing of such wafers, external particles often flow into the wafer processing equipment, which may cause fatal problems for the wafer processing equipment whose pollution degree is kept extremely low.
另外,即使是外部粒子無法流入該晶圓處理設備內的環境,在晶圓藉助於機器臂(Arm)而移送的過程中,當碰撞到其他物體或設備等時,會發生粒子,這種粒子如果不適時處理或消除,必然會發生製品不良。In addition, even in the environment where external particles cannot flow into the wafer processing equipment, when the wafer is transported by the robot arm (Arm), when it collides with other objects or equipment, particles will be generated. If it is not handled or eliminated in time, product defects will inevitably occur.
因此,要求開發一種用於解決這種問題的設備。Therefore, it is required to develop a device for solving this problem.
[先前技術文獻] [專利文獻] 韓國公開實用新型公報第1998-010231號。[Prior Technical Literature] [Patent Literature] Korea Public Utility Model Bulletin No. 1998-010231.
[發明所欲解決之課題][The problem to be solved by the invention]
本發明作為為了解決上述以往技術的問題而研發的發明,目的是使得預先感測在晶圓處理製程中流入或發生的粒子並執行迅速處理,因而可以將晶圓處理設備保持為潔淨室環境。The present invention is an invention developed to solve the above-mentioned problems of the prior art. The purpose of the present invention is to detect particles flowing in or generated in the wafer processing process in advance and perform rapid processing, so that the wafer processing equipment can be maintained in a clean room environment.
本發明的目的不限於此,未提及的其他目的是從業人員可以從以下記載而明確理解的。The object of the present invention is not limited to this, and other objects not mentioned are clearly understood by practitioners from the following description.
[用以解決課題的手段][Means to solve the problem]
旨在達成如上所述本發明目的的具有粒子感測器的晶圓處理設備可以包括:晶圓移送單元,其放置晶圓並移送到進行晶圓處理製程的製程區域內;粒子感測器,其配備於該晶圓移送單元的預先設置的位置,判斷在放置於該晶圓移送單元的晶圓的移送路徑上是否存在粒子;及流入扇,其進行旋轉而使流體流入該粒子感測器。The wafer processing equipment with a particle sensor intended to achieve the above-mentioned object of the present invention may include: a wafer transfer unit that places the wafer and transfers it to a process area where the wafer processing process is performed; a particle sensor, It is equipped in a pre-set position of the wafer transfer unit to determine whether particles are present on the transfer path of the wafer placed in the wafer transfer unit; and an inflow fan that rotates to cause fluid to flow into the particle sensor .
另外,該晶圓移送單元可以包括:移送臂,其供該晶圓安放;及移送板,其配備得支撐該移送臂,使該移送臂移送到該製程區域內。In addition, the wafer transfer unit may include: a transfer arm for placing the wafer; and a transfer plate equipped to support the transfer arm so that the transfer arm is transferred to the process area.
另外,該粒子感測器可以包括使得該粒子流入的流入孔,該流入孔可以以朝該移送臂方向露出的狀態內置於該移送板內。In addition, the particle sensor may include an inflow hole for allowing the particles to flow in, and the inflow hole may be built into the transfer plate in a state of being exposed toward the transfer arm.
另外,在該移送板上可以形成有通過孔,該通過孔至少配備於與該流入孔對應的位置,且其截面面積大於或等於該流入孔的截面面積。In addition, a through hole may be formed in the transfer plate, the through hole is provided at least at a position corresponding to the inflow hole, and the cross-sectional area of the through hole is greater than or equal to the cross-sectional area of the inflow hole.
另外,該粒子感測器可以包括藉由有線及無線中某一種以上的方式通訊的通訊部,還可以包括接收藉助於該粒子感測器而測量、藉助於該通訊部而發射的測量數據並進行監視的中央處理模組。In addition, the particle sensor may include a communication part that communicates by one or more of wired and wireless methods, and may also include receiving measurement data measured by the particle sensor and transmitted by the communication part, and The central processing module for monitoring.
另外,該中央處理模組可以在該測量數據滿足預先設置的限制基準的情況下,執行粒子應對處理。In addition, the central processing module may execute particle response processing when the measurement data meets a preset limit criterion.
另外,可以還包括鄰接晶圓的移送路徑配置的排出扇,該中央處理模組可以在判斷為該測量數據滿足預先設置的限制基準的情況下,控制使該排出扇運轉。In addition, it may further include a discharge fan arranged adjacent to the transfer path of the wafer, and the central processing module may control the operation of the discharge fan when it is determined that the measurement data meets a preset limit criterion.
另外,可以還包括沿晶圓的移送路徑配置的多個拍攝模組,該中央處理模組可以在判斷為該測量數據滿足預先設置的限制基準的情況下,接收藉由該拍攝模組獲得的影像數據並送出。In addition, it may further include a plurality of imaging modules arranged along the transfer path of the wafer, and the central processing module may receive the imaging module obtained by the imaging module when it is determined that the measurement data meets the preset limit criterion. The image data is sent out.
另外,該中央處理模組可以在該粒子的粒度為基準值以上的情況下,判斷為滿足該限制基準。In addition, the central processing module may determine that the restriction criterion is satisfied when the particle size of the particle is equal to or greater than the criterion value.
另外,該中央處理模組可以在該粒子的每單位空間的密度為基準值以上的情況下,判斷為滿足該限制基準。In addition, the central processing module may determine that the restriction criterion is satisfied when the density of the particle per unit space is equal to or greater than the reference value.
另外,該中央處理模組可以控制使得該流入扇旋轉成向將流體從該粒子感測器排出到外部的方向旋轉。In addition, the central processing module can control the inflow fan to rotate in a direction that discharges the fluid from the particle sensor to the outside.
另一方面,在該移送板的內部可以形成有空間,在該移送板的外周面可以形成有與該空間連通的貫通孔,在該移送板的內部,可以在與該貫通孔對應的位置配備有排出扇,在與該貫通孔對應的該移送板的外部還配備有粒子感測器。On the other hand, a space may be formed inside the transfer plate, a through hole communicating with the space may be formed on the outer peripheral surface of the transfer plate, and the inside of the transfer plate may be provided at a position corresponding to the through hole There is a discharge fan, and a particle sensor is also provided on the outside of the transfer plate corresponding to the through hole.
[發明功效][Efficacy of invention]
旨在解決所述課題的本發明的具有粒子感測器的晶圓處理設備具有如下效果。The wafer processing equipment with the particle sensor of the present invention, which aims to solve the above-mentioned problems, has the following effects.
第一,具有可以有效感測晶圓處理製程,特別是移送過程中流入或發生的粒子並進行處理的優點。First, it has the advantage of being able to effectively sense and process particles that have flowed in or occurred during the wafer processing process, especially during the transfer process.
第二,據此,具有可以將晶圓處理設備內部保持為潔淨室環境的優點。Second, according to this, there is an advantage that the inside of the wafer processing equipment can be maintained in a clean room environment.
第三,具有可以根據粒子發生原因而執行多樣的後續處理並迅速消除原因的優點。Third, it has the advantage of being able to perform various follow-up treatments according to the cause of particle occurrence and quickly eliminate the cause.
第四,具有在發生粒子時立即去除該等粒子而使最終製品的品質最大化的優點。Fourth, it has the advantage of removing particles immediately when they occur to maximize the quality of the final product.
本發明的效果不限於以上提及的效果,未提及的其他效果是從業人員從申請專利範圍的記載而可以明確理解的。The effects of the present invention are not limited to the above-mentioned effects, and other effects not mentioned are clearly understood by practitioners from the description of the scope of patent application.
下面參照圖式,說明可以具體實現本發明目的的本發明較佳實施例。在說明本實施例方面,針對相同構成,使用相同名稱及相同標記,省略對其的附加說明。Hereinafter, with reference to the drawings, preferred embodiments of the present invention that can specifically achieve the objectives of the present invention will be described. In describing the present embodiment, the same names and the same signs are used for the same configuration, and additional descriptions thereof are omitted.
圖1是顯示本發明第一實施例的晶圓處理設備100的樣子的圖,圖2是顯示本發明第一實施例的晶圓處理設備100中的晶圓移送單元200的樣子的圖。FIG. 1 is a diagram showing the appearance of a
而且,圖3是顯示本發明第一實施例的晶圓處理設備100中的移送板212及粒子感測器300的樣子的圖。3 is a diagram showing the state of the
如圖1至圖3所示,本發明的晶圓處理設備100包括:晶圓移送單元200,其放置晶圓並將其移送到藉由其進行處理製程的製程區域內;粒子感測器300,其配備於該晶圓移送單元200的預先設置的位置,判斷放置於該晶圓移送單元200的晶圓W的移送路徑上是否存在粒子。As shown in FIGS. 1 to 3, the
而且,本發明的晶圓處理設備100可以包括用於處理該晶圓W的多樣的構成要素。例如,該晶圓處理設備100可以包括進行包括晶圓的截斷、研磨、蝕刻、塗覆蓋等在內的多樣處理製程的多個製程區域,該晶圓移送單元200可以選擇性地配備於該多個製程區域,放置並移送該晶圓W。Furthermore, the
另一方面,在以下將說明的本發明各實施例中,代表性列舉了在該晶圓處理設備100的多樣處理製程中利用旋塗機在該晶圓W塗覆化學物質的處理製程中配備的該晶圓移送單元200及該粒子感測器300。On the other hand, in the embodiments of the present invention that will be described below, a representative example is the use of a spin coater in the processing process of coating chemical substances on the wafer W in the various processing processes of the
不過,如前所述,該晶圓移送單元200及該粒子感測器300當然也可以配備於該晶圓處理設備100的任意製程區域,並非只局限於下面記述的實施例的形態。However, as mentioned above, the
就圖1至圖3所示的本發明第一實施例而言,該晶圓處理設備100可以包括塗覆部110、流體供應部120、感光液容納部130、溶劑容納部(圖中未示出)。As far as the first embodiment of the present invention shown in FIGS. 1 to 3 is concerned, the
該塗覆部110可以在內側包括一個以上的處理空間,該處理空間可以製作在該塗覆部110側面形成的塗覆門112並開閉。The
而且,該流體供應部120配備於塗覆部110的下部,從該感光液容納部130和溶劑容納部接受傳遞感光液及溶劑,使之向該塗覆部110側流動。因此,該流體供應部120可以在內側包括多樣結構的配管組件。Furthermore, the
該感光液容納部130作為具備感光液的構成要素,可以包括容納感光液的感光液容納箱。該感光液容納箱中容納的感光液可以藉由前述的流體供應部120傳遞給塗覆部110。The photosensitive
該溶劑容納部作為具備溶劑的構成要素,供溶劑容納的溶劑容納箱可以包括在內側配備的一個以上化學箱。而且,該溶劑容納箱中容納的溶劑也可以藉由前述流體供應部傳遞給塗覆部110。The solvent storage section is a constituent element provided with a solvent, and the solvent storage tank for containing the solvent may include one or more chemical tanks provided inside. Furthermore, the solvent contained in the solvent storage box may also be transferred to the
該晶圓移送單元200可以配備於該晶圓處理設備100內的多樣位置,特別是如圖2所示,可以包括:移送臂210,其供該晶圓W安放;移送板212,其配備得支撐該移送臂210,使該移送臂210移送到包括用於處理該晶圓W的處理空間的塗覆部110。The
此時,就本實施例而言,該移送臂210包括供該晶圓W安放的安放部216及能夠使該安放部216向前後方向移動的前後移動部215。而且,該移送板212配備於該移送臂210的下部。At this time, in this embodiment, the
另外,在本實施例中,該晶圓移送單元200可以包括:第一驅動執行器240,其提供驅動力,以便該移送板212能夠沿導軌220進行上下移動;第二驅動執行器250,其藉由連接部230提供驅動力,以便該前後移動部215能夠前後移動。In addition, in this embodiment, the
如圖3所示,本發明包括粒子感測器300,該粒子感測器300配備於該晶圓移送單元200的預先設置的位置,判斷在放置於該晶圓移送單元200的晶圓W的移送路徑上是否存在粒子。As shown in FIG. 3, the present invention includes a
在本實施例中,該粒子感測器300是插入於在該移送板212形成的通過孔213並以藉助於連結構件而連結的狀態內置於該移送板212內的情形,但只要是容易感測該粒子之處,該粒子感測器300也可以應用於該晶圓移送單元200的任意處。In the present embodiment, the
而且,該粒子感測器300可以包括使得粒子流入的流入孔310,該流入孔310具有向該移送臂210方向露出的狀態。Furthermore, the
另外,該粒子感測器300可以包括吸入扇(圖中未示出),該吸入扇隨著旋轉而產生吸入力,可以藉由該流入孔310而使粒子流入。而且,在本實施例中,在該粒子感測器300的一側,可以還形成有使內部熱排出到外部的散熱孔320。In addition, the
如上所述,就本實施例而言,該粒子感測器300配備於該移送板212,因而具有可以有效感測在晶圓W的移送過程中流入或發生的粒子並處理的優點。As described above, in the present embodiment, the
另一方面,該粒子感測器300可以包括能夠藉由有線及無線通訊中的某一種以上方式執行通訊的通訊部(圖中未示出),因此,藉由該粒子感測器300測量的測量數據的流動如圖4所示。On the other hand, the
如圖4所示,藉助於該粒子感測器300而測量的測量數據,藉由該粒子感測器300的主板10傳輸給運轉位置(Dynamic Positioning)系統20及中央處理模組30。As shown in FIG. 4, the measurement data measured by the
該中央處理模組30接收測量數據,在執行監視作業的同時,當該測量數據滿足預先設置的限制基準時,可以控制各部而使得執行粒子應對處理。The
該限制基準可以多樣地設置,以便符合環境,例如,就本實施例而言,該中央處理模組30在該粒子的粒度為基準值以上時,而且該粒子的每單位空間的密度為基準值以上時,使得判斷為滿足該限制基準。The limit criterion can be set in various ways to meet the environment. For example, in this embodiment, when the particle size of the
另外,該中央處理模組30在判斷為該測量數據滿足預先設置的限制基準的情況下,可以執行多樣的粒子應對處理。In addition, the
就本實施例而言,該晶圓處理設備100可以還包括:排出扇(圖中未示出),其鄰接晶圓W製程上的多樣移送路徑進行配置;多個拍攝模組(圖中未示出),其沿晶圓W的移送路徑配置,因此,該中央處理模組30在判斷為該測量數據滿足預先設置的限制基準時,可以控制使該排出扇運轉,使粒子排出到外部,或接收藉由該拍攝模組獲得的影像數據並送出。As far as this embodiment is concerned, the
此外,該中央處理模組30當然可以執行基於視聽覺的警報、空調設備控制等多樣的粒子應對處理。In addition, the
另一方面,該晶圓W可以根據處理製程中預先設置的程序(時間表),藉助於該晶圓移送單元200而移動,因此,可以判斷在某一時刻位於何種場所。即,該中央處理模組30可以藉由當前時刻,掌握該晶圓W的位置及當前執行的製程情況等。On the other hand, the wafer W can be moved by the
因此,該中央處理模組30在判斷為該測量數據滿足預先設置的限制基準的情況下,還可以追蹤基於感測的時刻的該晶圓W位置,追蹤及監視該晶圓處理設備100的各構成要素中的粒子發生位置。Therefore, the
圖5是顯示隨著時間流動而藉助於粒子感測器300的測量結果的圖表。圖5所示的圖表的橫軸代表隨著製程進行的時間流動,縱軸代表粒子導致的污染度。FIG. 5 is a graph showing the measurement result by the
如圖5所示,隨著時間流動,晶圓經過(A)製程~(D)製程的各製程,藉助於該粒子感測器300而測量的測量數據按預先設置的單位時間間隔傳輸給中央處理模組30。該單位時間可以多樣地設置,在本實施例中,該粒子感測器300設置為每100ms發射測量數據。As shown in Figure 5, as time flows, the wafer goes through each of the (A) process to (D) process, and the measurement data measured by the
如前所述,該晶圓W可以根據處理製程中預先設置的程序(時間表),藉助於該晶圓移送單元200而移動到(A)製程~(D)製程的製程區域內,可以判斷在某一時刻位於何種場所。As mentioned above, the wafer W can be moved to the process area of (A) process ~ (D) process by means of the
就圖5示例性圖示的圖表而言,在晶圓W位於(B)製程的製程區域的狀態下,顯示出藉助於該粒子感測器300而測量的測量數據滿足預先設置的限制基準,由此可以判斷在(B)製程的哪個位置發生了問題。As far as the chart exemplarily illustrated in FIG. 5 is concerned, when the wafer W is located in the process area of the (B) process, it is shown that the measurement data measured by the
因此,在這種情況下,可以控制使鄰接相應製程區域的排出扇運轉,使粒子排出到外部,或執行接收藉由拍攝模組獲得的影像數據並送出等多樣的粒子應對處理。Therefore, in this case, it is possible to control the operation of the discharge fan adjacent to the corresponding process area to discharge the particles to the outside, or perform various particle response processing such as receiving and sending the image data obtained by the imaging module.
以上對本發明的第一實施例進行了說明。就本實施例而言,是該粒子感測器300配備於移送板212的情形,但此外當然也可以配備於該晶圓移送單元200的多樣位置,或配備於晶圓處理設備100的其他構成要素。The first embodiment of the present invention has been described above. In this embodiment, the
下面對本發明另一實施例進行說明。Next, another embodiment of the present invention will be described.
圖6之(a)是圖示本發明第二實施例的晶圓處理設備中的移送板212及粒子感測器300的樣子的圖。FIG. 6(a) is a diagram illustrating the appearance of the
就圖6之(a)所示的本發明第二實施例而言,如前述第一實施例所示,該粒子感測器300內置於移送板212,這點是相同的。As for the second embodiment of the present invention shown in FIG. 6(a), as shown in the aforementioned first embodiment, the
不過,就本實施例而言,在該移送板212上形成的通過孔213配備於與該粒子感測器300的該流入孔310對應的位置,截面面積與該流入孔310的截面面積相同地形成,這點是不同的。However, in this embodiment, the through
即,本實施例使該通過孔213的尺寸達到最小,防止粒子流入該粒子感測器300的該流入孔310之外其他部分或該移送板212的內側,可以使運轉失靈實現最小化。That is, in this embodiment, the size of the through
另一方面,在圖6之(b)中顯示了本發明第二實施例中在該通過孔213上部配備有流入扇217的構成。On the other hand, FIG. 6(b) shows a configuration in which an
該流入扇217將周邊的粒子藉由該通過孔213傳遞給該粒子感測器300,由此,可以更迅速、準確地感測粒子。另一方面,該流入扇217在初始狀態下,向使流體流入該粒子感測器300的方向旋轉,然後,如果判斷為藉助於粒子感測器300感測到粒子,則控制使得向與初始旋轉方向相反方向旋轉,可以去除周邊的粒子。The
另一方面,在圖6之(b)中,流入孔310的形狀構成得使其寬度沿著風扇的旋轉方向逐漸減小,該風扇旋轉使得流體朝向該流入孔310流入。由於這種流入孔310形狀,液體速度在該流入孔310的端部增加,因而粒子可以迅速而準確地流入粒子感測器300內。On the other hand, in (b) of FIG. 6, the
圖7是顯示本發明第三實施例的晶圓處理設備中的移送板212及粒子感測器300的樣子的圖。FIG. 7 is a diagram showing the appearance of the
就圖7所示的本發明第三實施例而言,與前述第二實施例一樣,該粒子感測器300內置於移送板212,該通過孔213與該流入孔310的截面面積相同地形成。As for the third embodiment of the present invention shown in FIG. 7, the
不過,就本實施例而言,形成得使該移送板212的內面與該粒子感測器300的上面之間稍稍隔開,在其之間還配備有密封構件214。However, in this embodiment, it is formed so that the inner surface of the
該密封構件214可以包圍該通過孔213與該流入孔310四周地形成,可以防止粒子流入該移送板212的內面與該粒子感測器300的上面之間。The sealing
圖8是顯示本發明第四實施例的晶圓處理設備中的移送板212及粒子感測器300的樣子的圖。FIG. 8 is a diagram showing the appearance of the
就圖8所示的本發明第四實施例而言,與前述第三實施例一樣,該粒子感測器300內置於移送板212,形成得使該移送板212的內面與該粒子感測器300的上面之間稍稍隔開,在其之間還配備有密封構件214。With regard to the fourth embodiment of the present invention shown in FIG. 8, the
不過,就本實施例而言,該通過孔213的寬度d2形成得大於該流入孔310的寬度d1,這點是不同的。However, in this embodiment, the width d2 of the through
即,本實施例將該通過孔213的面積形成得更大,從而可以使粒子的流入量增加,可以使得能夠獲得更精密的測量數據。That is, in this embodiment, the area of the through
圖9是顯示本發明第五實施例的晶圓處理設備中的移送板212及粒子感測器300的樣子的圖。FIG. 9 is a diagram showing the appearance of the
就圖9所示的本發明第五實施例而言,與前述第四實施例一樣,該粒子感測器300內置於移送板212,形成得使該移送板212的內面與該粒子感測器300的上面之間稍稍隔開,在其之間還配備有密封構件214,同時,該通過孔213的寬度形成得大於該流入孔310的寬度。As far as the fifth embodiment of the present invention shown in FIG. 9 is concerned, the
不過,就本實施例而言,該通過孔213的外周及該密封構件214的內周面,以寬度從上部向下部越來越逐漸減小的形態傾斜地形成,這點是不同的。However, in the present embodiment, the outer circumference of the through
如上所述,本實施例可以全部刪除第四實施例中曾在該移送板212與該粒子感測器300的外殼之間形成的各個錯層,因此,粒子可以沿著該通過孔213及該密封構件214的傾斜面滑動,更順利地流入該流入孔310側。As described above, this embodiment can completely delete the various staggered layers that were formed between the
圖10是顯示本發明第六實施例的晶圓處理設備中的移送板212及粒子感測器300的樣子的圖。FIG. 10 is a diagram showing the appearance of the
就圖10所示的本發明第六實施例而言,如前述第一實施例所示,該粒子感測器300內置於移送板212,且以上面露出於外部的狀態配備。Regarding the sixth embodiment of the present invention shown in FIG. 10, as shown in the foregoing first embodiment, the
不過,就本實施例而言,該粒子感測器300配備多個,在該移送板212形成的多個通過孔213,每個均配備,這點是不同的。However, in the present embodiment, the
因此,本實施例可以從該移送板212的互不相同區域收集粒子並測量,可以藉由各個測量數據而執行更精密的監視。Therefore, in this embodiment, particles can be collected and measured from different areas of the
圖11是顯示本發明第七實施例的晶圓處理設備中的移送板212及粒子感測器300的樣子的圖。FIG. 11 is a diagram showing the appearance of the
就圖11所示的本發明第七實施例而言,該粒子感測器300形成得能夠在該移送板212內沿X軸及Y軸移動,這點與前述實施例不同。With regard to the seventh embodiment of the present invention shown in FIG. 11, the
具體來說,就本實施例而言,在該移送板212的內部,包括:彼此隔開的的一對第一移送軌道420;第二移送軌道430,其連接於該一對第一移送軌道420之間,形成得能夠沿該第一移送軌道420的長度方向移動。Specifically, as far as this embodiment is concerned, the inside of the
而且,在該第二移送軌道430上配備有放置該粒子感測器300的放置構件410,該放置構件410形成得能夠沿該第二移送軌道430的長度方向移動。Moreover, the
即,本實施例的該粒子感測器300形成得能夠在該移送板212內沿X軸及Y軸移動,根據情況,能夠在該移送板212的多樣位置形成的多個通過孔(213,圖中未示出)之間移動並迅速應對。That is, the
另一方面,在該第四實施例至第七實施例的情況下,與前面考查的第二實施例一樣,可以應用追加配備流入扇或流入孔的形狀逐漸減小的構成,這是普通技術人員不言而喻的。On the other hand, in the case of the fourth embodiment to the seventh embodiment, as in the second embodiment examined previously, a configuration in which the shape of the inflow fan or the inflow hole is gradually reduced can be applied, which is a common technique The staff speaks for itself.
另一方面,如圖12所示,在移送板212的內部形成有空餘空間,在該移送板212的外周面,形成有與該空餘空間連通的貫通孔。On the other hand, as shown in FIG. 12, an empty space is formed inside the
在該移送板212的該貫通孔,沿該移送板212的內周面安裝有送風扇218,該送風扇218既定地旋轉,構成得使該移送板212內部的空氣釋放到外部。A
如上所述,藉由該送風扇218,將該移送板212內周面的空氣釋放到外部,從而實現該移送板212的冷卻。As described above, the
但是,在該移送板212的內部,在運轉過程會發生粒子,這種粒子會污染鄰接的晶圓W。However, inside the
因此,在本發明中,在該貫通孔附著前面說明的粒子感測器300,構成得感測從該移送板212的內部釋放的空氣的粒子發生量。Therefore, in the present invention, the
該粒子感測器300可以配備於包圍該粒子感測器300側面的側面殼301及包圍該粒子感測器300露出面的上面殼302的內部,在該側面殼301及/或該上面殼302,可以形成有用於藉助送風扇218排出空氣的多個槽。The
當該粒子感測器300感測的粒子感測量為預先設置量以上時,提高該送風扇218的旋轉速度,使該移送板212內部的粒子排出到外部。When the particle sensing measurement sensed by the
然後,可以控制使得啟動鄰接位置的排出扇,使粒子排出到外部。Then, it can be controlled so that the discharge fan at the adjacent position is activated to discharge the particles to the outside.
如上所述,考查了本發明的較佳實施例,除前面說明的實施例之外,本發明可以在不超出其宗旨或範疇的情況下,以其他特定形態具體化,這是相應技術領域的技術人員不言而喻的。因此,上述實施例並非限定而是示例性的,因此,本發明不限定於上述說明,也可以在權利要求項的範疇及其同等範疇內變更。As mentioned above, after examining the preferred embodiments of the present invention, in addition to the embodiments described above, the present invention can be embodied in other specific forms without exceeding its purpose or scope. This is in the corresponding technical field. The technicians speak for themselves. Therefore, the above-mentioned embodiments are not limited but illustrative. Therefore, the present invention is not limited to the above-mentioned description, and may be changed within the scope of the claims and the equivalent scope thereof.
10:主板 20:控制系統 30:中央處理模組 100:晶圓處理設備 110:塗覆部 112:塗覆門 120:流體供應部 130:感光液容納部 200:晶圓移送單元 210:移送臂 212:移送板 213:通過孔 214:密封構件 215:前後移動部 216:安放部 217:流入扇 218:送風扇 220:導軌 230:連接部 240:第一驅動執行器 250:第二驅動執行器 300:粒子感測器 301:側面殼 302:上面殼 310:流入孔 320:散熱孔 410:放置構件 420:放置構件 430:第二移送軌道 W:晶圓10: Motherboard 20: Control system 30: Central Processing Module 100: Wafer processing equipment 110: Coating Department 112: coating door 120: Fluid Supply Department 130: photosensitive liquid container 200: Wafer transfer unit 210: transfer arm 212: transfer board 213: Through Hole 214: Sealing member 215: Moving part forward and backward 216: Placement Department 217: Inflow Fan 218: fan 220: Rail 230: connecting part 240: The first drive actuator 250: second drive actuator 300: particle sensor 301: side shell 302: upper shell 310: Inflow hole 320: cooling hole 410: Place components 420: place components 430: second transfer track W: Wafer
圖1是顯示本發明第一實施例的晶圓處理設備的樣子的圖;FIG. 1 is a diagram showing the appearance of a wafer processing apparatus according to a first embodiment of the present invention;
圖2是顯示本發明第一實施例的晶圓處理設備中的晶圓移送單元的樣子的圖;2 is a diagram showing the appearance of a wafer transfer unit in the wafer processing equipment according to the first embodiment of the present invention;
圖3是顯示本發明第一實施例的晶圓處理設備中的移送板及粒子感測器的樣子的圖;3 is a diagram showing the appearance of the transfer plate and the particle sensor in the wafer processing equipment according to the first embodiment of the present invention;
圖4是顯示本發明第一實施例的晶圓處理設備中藉助於該粒子感測器而測量的測量數據的流動的圖;4 is a diagram showing the flow of measurement data measured by means of the particle sensor in the wafer processing apparatus of the first embodiment of the present invention;
圖5是顯示隨著時間流動而藉助於粒子感測器的測量結果的圖表;FIG. 5 is a graph showing the measurement result by means of the particle sensor as time flows;
圖6是顯示本發明第二實施例的晶圓處理設備中的移送板及粒子感測器的樣子的圖;6 is a diagram showing the appearance of the transfer plate and the particle sensor in the wafer processing equipment according to the second embodiment of the present invention;
圖7是顯示本發明第三實施例的晶圓處理設備中的移送板及粒子感測器的樣子的圖;7 is a diagram showing the appearance of the transfer plate and the particle sensor in the wafer processing equipment of the third embodiment of the present invention;
圖8是顯示本發明第四實施例的晶圓處理設備中的移送板及粒子感測器的樣子的圖;8 is a diagram showing the appearance of the transfer plate and the particle sensor in the wafer processing equipment according to the fourth embodiment of the present invention;
圖9是顯示本發明第五實施例的晶圓處理設備中的移送板及粒子感測器的樣子的圖;9 is a diagram showing the appearance of the transfer plate and the particle sensor in the wafer processing equipment of the fifth embodiment of the present invention;
圖10是顯示本發明第六實施例的晶圓處理設備中的移送板及粒子感測器的樣子的圖;10 is a diagram showing the appearance of the transfer plate and the particle sensor in the wafer processing equipment of the sixth embodiment of the present invention;
圖11是顯示本發明第七實施例的晶圓處理設備中的移送板及粒子感測器的樣子的圖;及FIG. 11 is a diagram showing the appearance of the transfer plate and the particle sensor in the wafer processing equipment of the seventh embodiment of the present invention; and
圖12是顯示本發明的用於去除移送板內部的粒子的感測設備及送風扇的樣子的圖。Fig. 12 is a diagram showing the appearance of the sensing device and the blower fan for removing particles inside the transfer plate of the present invention.
200:晶圓移送單元 200: Wafer transfer unit
210:移送臂 210: transfer arm
212:移送板 212: transfer board
215:前後移動部 215: Moving part forward and backward
216:安放部 216: Placement Department
220:導軌 220: Rail
230:連接部 230: connecting part
240:第一驅動執行器 240: The first drive actuator
250:第二驅動執行器 250: second drive actuator
W:晶圓 W: Wafer
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