TW202104620A - Vapor deposition material and method for manufacturing same - Google Patents
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本發明係關於一種真空蒸鍍法所使用之蒸鍍材料。The present invention relates to an evaporation material used in a vacuum evaporation method.
真空蒸鍍法係成膜技術之一,且為以下技術,即,於真空中對蒸發材料進行加熱,成為氣體分子之蒸鍍材料附著於基板,藉此形成薄膜。真空蒸鍍法廣泛地利用於形成電子零件、半導體裝置、光學薄膜、磁裝置、LED、有機EL、LCD等中之元件。又,真空蒸鍍法不僅可使金屬成膜,亦可使氧化物等非金屬成膜。The vacuum evaporation method is one of the film forming techniques, and is a technique in which the evaporation material is heated in a vacuum, and the evaporation material that becomes gas molecules adheres to the substrate, thereby forming a thin film. The vacuum evaporation method is widely used to form components in electronic parts, semiconductor devices, optical thin films, magnetic devices, LEDs, organic EL, LCDs, etc. In addition, the vacuum vapor deposition method can not only form a metal film, but also form a film of non-metal such as oxide.
過去,於將蒸鍍材料填充至坩堝,並使用電子束等使之熔解時,產生蒸發材料所含之雜質等揮發而產生爆沸現象,導致於基板上附著粒子之問題。關於該爆沸現象之問題,專利文獻1中提出有減少雜質之方法。又,專利文獻2中提出有加入添加金屬之方法,進而,專利文獻3中提出有控制最外表面之氧量之方法。 [先前技術文獻] [專利文獻]In the past, when the vapor deposition material was filled into a crucible and melted using an electron beam, etc., the impurities contained in the vaporization material were volatilized and bumping occurred, which caused the problem of particles adhering to the substrate. Regarding the bumping phenomenon, Patent Document 1 proposes a method for reducing impurities. In addition, Patent Document 2 proposes a method of adding an additive metal, and Patent Document 3 proposes a method of controlling the amount of oxygen on the outermost surface. [Prior Technical Literature] [Patent Literature]
[專利文獻1]日本特開平1-180961號公報 [專利文獻2]國際公開第2017/199873號 [專利文獻3]日本特開2000-212728號公報[Patent Document 1] Japanese Patent Application Laid-Open No. 1-180961 [Patent Document 2] International Publication No. 2017/199873 [Patent Document 3] JP 2000-212728 A
[發明所欲解決之課題][The problem to be solved by the invention]
本發明之課題在於:提供一種蒸鍍材料,其係真空蒸鍍法所使用之材料,且可於蒸鍍材料之熔解時抑制爆沸現象。 [解決課題之技術手段]The subject of the present invention is to provide an evaporation material, which is a material used in a vacuum evaporation method and can suppress the bumping phenomenon when the evaporation material is melted. [Technical means to solve the problem]
可解決上述課題之本發明之實施形態為一種蒸鍍材料,其係真空蒸鍍法所使用之材料,其特徵在於:具有微孔,且圓等效直徑為0.1 μm以上且10.0 μm以下之微孔個數係每500 μm2 為1個以上。 [發明之效果]An embodiment of the present invention that can solve the above-mentioned problems is an evaporation material, which is a material used in a vacuum evaporation method, and is characterized in that it has micropores and has a circle equivalent diameter of 0.1 μm or more and 10.0 μm or less. The number of holes is 1 or more per 500 μm 2. [Effects of Invention]
根據本發明,可於蒸鍍材料之熔解時抑制爆沸現象,藉此,可減少附著於基板上之粒子。因此,有助於改善產品之良率。According to the present invention, the bumping phenomenon can be suppressed when the vapor deposition material is melted, thereby reducing the particles adhering to the substrate. Therefore, it helps to improve the yield of the product.
真空蒸鍍法所使用之蒸鍍材料通常藉由以下方式製作:將原料於氧化鋁等陶瓷坩堝或碳坩堝等中進行熔解,將熔液流入至鑄模而製作鑄錠,將所獲得之鑄錠機械加工成適當形狀(顆粒狀)後,利用酸或有機溶劑將表面洗淨而製作。作為原料,使用純度3N(99.9 wt%)以上者,又,機械加工後,對表面進行化學洗淨,而去除附著物。The vapor deposition material used in the vacuum vapor deposition method is usually produced by the following method: melting the raw materials in a ceramic crucible such as alumina or a carbon crucible, etc., and pouring the molten liquid into a mold to produce an ingot, and the obtained ingot After machining into an appropriate shape (granular shape), the surface is cleaned with acid or organic solvent. As a raw material, a purity of 3N (99.9 wt%) or higher is used, and after mechanical processing, the surface is chemically cleaned to remove adherents.
然而,於使用以此種方式洗淨之蒸鍍材料之情形時,亦於蒸鍍(熔解)時產生爆沸現象,而產生於基板上附著粒子之問題。本發明者對此種問題進行研究,結果認為:於蒸鍍材料之內部,原料或製造過程中所混入之蒸氣壓較高之雜質(揮發性元素)於熔解時氣化,而產生爆沸現象。However, when the vapor deposition material cleaned in this way is used, bumping phenomenon occurs during vapor deposition (melting), which causes the problem of particles adhering to the substrate. The inventor of the present invention conducted research on this problem, and the result is that: inside the vapor deposition material, impurities with higher vapor pressure (volatile elements) mixed in the raw material or the manufacturing process vaporize during melting, resulting in a bumping phenomenon. .
因此,本發明者進行努力研究,結果獲得以下知識見解,即,藉由於蒸鍍材料之表面形成微孔,而使存在於蒸鍍材料內部之揮發性元素容易揮發,藉此,可抑制爆沸現象。基於該知識見解,本發明之實施形態之蒸鍍材料之特徵在於:具有微孔,且圓等效直徑0.1 μm以上且10.0 μm以下之微孔個數係每500 μm2 為1個以上。Therefore, the inventors conducted diligent research, and as a result, obtained the knowledge that the volatile elements existing in the vapor deposition material are easily volatilized due to the formation of micropores on the surface of the vapor deposition material, thereby suppressing bumping phenomenon. Based on this knowledge, the vapor deposition material of the embodiment of the present invention is characterized in that it has micropores, and the number of micropores with a circle equivalent diameter of 0.1 μm or more and 10.0 μm or less is 1 or more per 500 μm 2.
於蒸鍍材料之表面,藉由使圓等效直徑0.1 μm以上且10.0 μm以下之微孔個數係每500 μm2 為1個以上,可使存在於蒸鍍材料之內部之蒸氣壓較高之雜質容易揮發,有效地抑制爆沸現象。較佳為圓等效直徑為0.1 μm以上且10.0 μm以下之微孔個數係每500 μm2 為5個以上、進而較佳為10個以上、進而理想為20個以上。微孔個數越多,則蒸鍍材料之表面積越大,存在於內部之揮發性元素之氣體越容易自微孔逸出,能夠更有效地抑制爆沸現象。On the surface of the vapor deposition material, by making the number of micropores with a circle equivalent diameter of 0.1 μm or more and 10.0 μm or less per 500 μm 2 , the vapor pressure existing in the vapor deposition material can be higher The impurities are easy to volatilize, effectively suppressing bumping. It is preferable that the number of micropores having a circle equivalent diameter of 0.1 μm or more and 10.0 μm or less is 5 or more per 500 μm 2 , more preferably 10 or more, and even more desirably 20 or more. The greater the number of micropores, the greater the surface area of the vapor deposition material, and the easier it is for the gas of volatile elements present in the interior to escape from the micropores, which can more effectively suppress bumping.
於本發明中,圓等效直徑0.1 μm以上且10.0 μm以下之微孔個數係以如下方式測定。首先,利用掃描式電子顯微鏡(SEM)以倍率:5000倍觀察蒸鍍材料之具代表性表面,數出存在於面積(500 μm2 )範圍之微孔(圓等效直徑0.1 μm以上且10.0 μm以下)之個數。In the present invention, the number of micropores with a circle equivalent diameter of 0.1 μm or more and 10.0 μm or less is determined as follows. First, use a scanning electron microscope (SEM) to observe the representative surface of the vapor-deposited material at a magnification of 5000 times, and count the micropores existing in the area (500 μm 2 ) (circle equivalent diameter of 0.1 μm or more and 10.0 μm) Below) the number.
本實施形態之蒸鍍材料較佳為主要應用於貴金屬材料、尤其是Au、Ag、Pt、Pd,又,亦可應用於該等與Ge、Si、Sn、As、Sb之合金(例如Au-Sn、Au-Ge)。該等材料為相對廣泛地應用於電子零件、半導體裝置、光學薄膜、磁裝置、LED、有機EL、LCD等中之材料。尤其是貴金屬材料之價格較高,故而藉由防止因爆沸現象所致之不必要之飛散,可享有成本方面之優點。The vapor deposition material of this embodiment is preferably mainly applied to noble metal materials, especially Au, Ag, Pt, Pd, and can also be applied to these alloys with Ge, Si, Sn, As, and Sb (such as Au- Sn, Au-Ge). These materials are relatively widely used in electronic parts, semiconductor devices, optical films, magnetic devices, LEDs, organic EL, LCDs, etc. In particular, the price of precious metal materials is relatively high, so by preventing unnecessary scattering due to bumping phenomenon, you can enjoy cost advantages.
本實施形態之蒸鍍材料較佳為純度為3N(99.9 wt%)以上,較佳為4N(99.99 wt%)以上。藉由減少雜質量,可抑制隨之產生的爆沸現象。但本發明主要防止因存在於內部之As、Zn、Mg、Na、K等揮發性元素(蒸氣壓較蒸鍍材料之蒸氣壓高之元素)所引起之爆沸現象,因此,並非只要純度較高便可抑制爆沸現象。再者,純度之計算時,雜質中不包括下述添加物(C、S、P)及氣體成分。The vapor deposition material of this embodiment preferably has a purity of 3N (99.9 wt%) or more, and more preferably 4N (99.99 wt%) or more. By reducing the amount of impurities, the subsequent bumping phenomenon can be suppressed. However, the present invention mainly prevents the bumping phenomenon caused by volatile elements such as As, Zn, Mg, Na, K, etc. (elements with a higher vapor pressure than the vapor pressure of the vapor deposition material) existing in the interior. Therefore, it is not as long as the purity is relatively high. High can suppress the bumping phenomenon. Furthermore, when calculating the purity, the following additives (C, S, P) and gas components are not included in the impurities.
本實施形態之蒸鍍材料例如能夠以如下方式製作。 向純度3N(99.9wt%)以上之金屬原料添加微量之碳(C)、硫(S)、磷(P)之任一種以上,於大氣中、真空中或不活性氣體環境中熔解後,對其進行鑄造而製作鑄錠。其後,對所獲得之鑄錠進行切削等,機械加工成顆粒狀之後,使用酸或有機溶劑等洗淨表面。 繼而,對添加有上述碳等之顆粒(蒸鍍材料)於含氧、含氫或含水蒸氣之環境下,於400℃以上且蒸鍍材料之熔點以下之溫度進行熱處理。此時所添加之碳等與氧或氫等反應而成為CO2 、CH4 等氣體,脫附時,可於蒸鍍材料之表面形成微孔。再者,碳由於成為化合物之氣體而去除,故而幾乎不會殘留於最終蒸鍍材料中。又,確認到除碳以外,對於硫或磷亦具有同樣之效果。 [實施例]The vapor deposition material of this embodiment can be produced as follows, for example. Add a trace amount of carbon (C), sulfur (S), and phosphorus (P) to metal raw materials with a purity of 3N (99.9wt%) or more, and then melt them in the atmosphere, vacuum or inert gas environment. It is cast to produce an ingot. After that, the obtained ingot is cut, etc., and is machined into pellets, and then the surface is cleaned with an acid or an organic solvent or the like. Then, the particles (evaporation material) added with the above-mentioned carbon and the like are heat-treated at a temperature above 400° C. and below the melting point of the evaporation material in an atmosphere containing oxygen, hydrogen, or water vapor. At this time, the added carbon and the like react with oxygen or hydrogen to become CO 2 , CH 4 and other gases. During desorption, micropores can be formed on the surface of the vapor deposition material. Furthermore, since carbon is removed as a compound gas, it hardly remains in the final vapor deposition material. Furthermore, it was confirmed that in addition to carbon, it has the same effect on sulfur or phosphorus. [Example]
繼而,對本發明之實施例等進行說明。再者,以下之實施例僅表示代表性之例,本發明無需受該等實施例限制,應由說明書所記載之技術思想之範圍作解釋。Next, embodiments of the present invention and the like will be described. Furthermore, the following embodiments only represent representative examples, and the present invention does not need to be limited by these embodiments, and should be interpreted by the scope of the technical ideas described in the specification.
(習知例) 將純度4N(99.99 wt%)之Au原料於大氣中熔解,對其進行鑄造而製作鑄錠,將所獲得之鑄錠藉由拉線等而機械加工成顆粒狀,其後,進行洗淨,製作純度4N之Au顆粒。 對於該Au顆粒,利用SEM觀察其表面,結果微孔個數為0個。將習知例之利用SEM之觀察照片示於圖1。再者,習知例及以下之實施例中,數出存在於觀察面積(500 μm2 )之圓等效直徑0.1 μm以上且10.0 μm以下之微孔個數。 繼而,將該Au顆粒(蒸鍍材料)填充於真空蒸鍍裝置之坩堝內,利用電子束進行預加熱後,使之熔融,觀察爆沸現象。其結果,因爆沸現象產生之晶圓上之缺陷(粒子)為500個以上。將以上之結果示於表1。(Conventional example) The Au raw material of purity 4N (99.99 wt%) is melted in the atmosphere, and casted to produce an ingot. The obtained ingot is machined into pellets by wire drawing, etc., and then , Wash it to make 4N Au particles. The surface of the Au particles was observed by SEM, and as a result, the number of micropores was zero. The SEM observation photograph of the conventional example is shown in FIG. 1. Furthermore, in the conventional example and the following examples, count the number of micropores with a circle equivalent diameter of 0.1 μm or more and 10.0 μm or less existing in the observation area (500 μm 2 ). Then, the Au particles (evaporation material) were filled in a crucible of a vacuum evaporation device, and then preheated by an electron beam, and then melted, and the bumping phenomenon was observed. As a result, there are more than 500 defects (particles) on the wafer caused by bumping. The above results are shown in Table 1.
(實施例1) 將添加碳10 wtppm所製作之純度4N之Au顆粒於含氧環境中、900℃進行加熱。對於熱處理後之Au顆粒,利用SEM觀察其表面,結果微孔個數為20~100個。將實施例1之利用SEM之觀察照片示於圖2。 繼而,將該Au顆粒(蒸鍍材料)填充於真空蒸鍍裝置之坩堝內,利用電子束進行預加熱後,使之熔融,觀察爆沸現象。其結果,因爆沸現象產生之晶圓上之缺陷(粒子)為0個。(Example 1) The Au particles with a purity of 4N made by adding 10 wtppm of carbon were heated at 900°C in an oxygen-containing environment. For the Au particles after heat treatment, the surface of the Au particles was observed by SEM, and the number of micropores was 20-100. The SEM observation photograph of Example 1 is shown in FIG. 2. Then, the Au particles (evaporation material) were filled in a crucible of a vacuum evaporation device, and then preheated by an electron beam, and then melted, and the bumping phenomenon was observed. As a result, there are zero defects (particles) on the wafer due to bumping.
(實施例2) 將添加碳5 wtppm所製作之純度4N之Au顆粒於含氫環境中、600℃進行加熱。對於熱處理後之Au顆粒,利用SEM觀察其表面,結果微孔個數為10~30個。 繼而,將該Au顆粒(蒸鍍材料)填充於真空蒸鍍裝置之坩堝內,利用電子束進行預加熱後,使之熔融,觀察爆沸現象。其結果,因爆沸現象產生之晶圓上之缺陷(粒子)為1~5個。(Example 2) The Au particles with a purity of 4N made by adding 5 wtppm of carbon were heated in a hydrogen-containing environment at 600°C. For the Au particles after heat treatment, the surface of the Au particles was observed by SEM, and the number of micropores was 10-30. Then, the Au particles (evaporation material) were filled in a crucible of a vacuum evaporation device, and then preheated by an electron beam, and then melted, and the bumping phenomenon was observed. As a result, there are 1 to 5 defects (particles) on the wafer due to bumping.
(實施例3) 將添加碳1 wtppm所製作之純度5N之Au顆粒於含水蒸氣環境中、400℃進行加熱。對於熱處理後之Au顆粒,利用SEM觀察其表面,結果微孔個數為1~10個。 繼而,將該Au顆粒(蒸鍍材料)填充於真空蒸鍍裝置之坩堝內,利用電子束進行預加熱後,使之熔融,觀察爆沸現象。其結果,因爆沸現象產生之晶圓上之缺陷(粒子)為20~30個。(Example 3) The Au particles with a purity of 5N made by adding 1 wtppm of carbon were heated at 400°C in a water vapor environment. For the Au particles after heat treatment, the surface of the Au particles was observed by SEM, and the number of micropores was 1-10. Then, the Au particles (evaporation material) were filled in a crucible of a vacuum evaporation device, and then preheated by an electron beam, and then melted, and the bumping phenomenon was observed. As a result, there are 20-30 defects (particles) on the wafer due to bumping.
(實施例4) 將添加硫5 wtppm所製作之純度4N之Au顆粒於大氣中、1050℃進行加熱。對於熱處理後之Au顆粒,利用SEM觀察其表面,結果微孔個數為20~50個。 繼而,將該Au顆粒(蒸鍍材料)填充於真空蒸鍍裝置之坩堝內,利用電子束進行預加熱後,使之熔融,觀察爆沸現象。其結果,因爆沸現象產生之晶圓上之缺陷(粒子)為1~10個。(Example 4) The Au particles of purity 4N made by adding 5 wtppm of sulfur were heated in the air at 1050°C. For the Au particles after heat treatment, the surface of the Au particles was observed by SEM, and the number of micropores was 20-50. Then, the Au particles (evaporation material) were filled in a crucible of a vacuum evaporation device, and then preheated by an electron beam, and then melted, and the bumping phenomenon was observed. As a result, there are 1-10 defects (particles) on the wafer due to bumping.
(實施例5) 將添加磷5 wtppm所製作之純度4N之Au顆粒於大氣中、700℃進行加熱。對於熱處理後之Au顆粒,利用SEM觀察其表面,結果微孔個數為20~50個。 繼而,將該Au顆粒(蒸鍍材料)填充於真空蒸鍍裝置之坩堝內,利用電子束進行預加熱後,使之熔融,觀察爆沸現象。其結果,因爆沸現象產生之晶圓上之缺陷(粒子)為1~10個。(Example 5) The Au particles with a purity of 4N made by adding 5 wtppm of phosphorus were heated in the air at 700°C. For the Au particles after heat treatment, the surface of the Au particles was observed by SEM, and the number of micropores was 20-50. Then, the Au particles (evaporation material) were filled in a crucible of a vacuum evaporation device, and then preheated by an electron beam, and then melted, and the bumping phenomenon was observed. As a result, there are 1-10 defects (particles) on the wafer due to bumping.
(實施例6) 將添加碳3 wtppm所製作之純度3N5之Pt顆粒於含氫環境中、1550℃進行加熱。對於熱處理後之Pt顆粒,利用SEM觀察其表面,結果微孔個數為20~50個。 繼而,將該Pt顆粒(蒸鍍材料)填充於真空蒸鍍裝置之坩堝內,利用電子束進行預加熱後,使之熔融,觀察爆沸現象。其結果,因爆沸現象產生之晶圓上之缺陷(粒子)為0個。(Example 6) Pt particles with a purity of 3N5 made by adding carbon 3 wtppm are heated at 1550°C in a hydrogen-containing environment. For the Pt particles after heat treatment, the surface of the Pt particles was observed by SEM, and the number of micropores was 20-50. Then, the Pt particles (evaporation material) were filled in a crucible of a vacuum evaporation device, and then preheated by an electron beam, and then melted, and the bumping phenomenon was observed. As a result, there are zero defects (particles) on the wafer due to bumping.
(實施例7) 將添加碳3 wtppm所製作之純度4N之Pt顆粒於含水蒸氣環境中、1000℃進行加熱。對於熱處理後之Pt顆粒,利用SEM觀察其表面,結果微孔個數為5~10個。將實施例7之利用SEM之觀察照片示於圖3。 繼而,將該Pt顆粒(蒸鍍材料)填充於真空蒸鍍裝置之坩堝內,利用電子束進行預加熱後,使之熔融,觀察爆沸現象。其結果,因爆沸現象產生之晶圓上之缺陷(粒子)為5~10個。(Example 7) Pt particles with a purity of 4N made by adding carbon 3 wtppm are heated at 1000°C in a water vapor environment. For the Pt particles after heat treatment, the surface of the Pt particles was observed by SEM, and the number of micropores was 5-10. The SEM observation photograph of Example 7 is shown in FIG. 3. Then, the Pt particles (evaporation material) were filled in a crucible of a vacuum evaporation device, and then preheated by an electron beam, and then melted, and the bumping phenomenon was observed. As a result, there are 5 to 10 defects (particles) on the wafer due to bumping.
(實施例8) 將添加碳1 wtppm所製作之純度4N之Ag顆粒於含氧環境中、400℃進行加熱。對於熱處理後之Ag顆粒,利用SEM觀察其表面,結果微孔個數為1~5個。 繼而,將該Ag顆粒(蒸鍍材料)填充於真空蒸鍍裝置之坩堝內,利用電子束進行預加熱後,使之熔融,觀察爆沸現象。其結果,因爆沸現象產生之晶圓上之缺陷(粒子)為10~30個。(Example 8) The Ag particles with a purity of 4N made by adding 1 wtppm of carbon were heated at 400°C in an oxygen-containing environment. After the heat treatment, the surface of the Ag particles was observed by SEM, and the number of micropores was 1 to 5. Then, the Ag particles (evaporation material) were filled in a crucible of a vacuum evaporation device, and then preheated by an electron beam, and then melted, and the bumping phenomenon was observed. As a result, there are 10-30 defects (particles) on the wafer due to bumping.
(實施例9) 將添加碳3 wtppm所製作之純度4N之Ag顆粒於含水蒸氣環境中、900℃進行加熱。對於熱處理後之Ag顆粒,利用SEM觀察其表面,結果微孔個數為20~50個。 繼而,將該Ag顆粒(蒸鍍材料)填充於真空蒸鍍裝置之坩堝內,利用電子束進行預加熱後,使之熔融,觀察爆沸現象。其結果,因爆沸現象產生之晶圓上之缺陷(粒子)為0個。(Example 9) The Ag particles with a purity of 4N made by adding 3 wtppm of carbon were heated at 900°C in a water vapor environment. After the heat treatment, the surface of the Ag particles was observed by SEM, and the number of micropores was 20-50. Then, the Ag particles (evaporation material) were filled in a crucible of a vacuum evaporation device, and then preheated by an electron beam, and then melted, and the bumping phenomenon was observed. As a result, there are zero defects (particles) on the wafer due to bumping.
(實施例10) 將添加碳3 wtppm所製作之純度3N之Pd顆粒於含氫環境中、1300℃進行加熱。對於熱處理後之Pd顆粒,利用SEM觀察其表面,結果微孔個數為20~50個。 繼而,將該Pd顆粒(蒸鍍材料)填充於真空蒸鍍裝置之坩堝內,利用電子束進行預加熱後,使之熔融,觀察爆沸現象。其結果,因爆沸現象產生之晶圓上之缺陷(粒子)為1~5個。(Example 10) Pd particles with a purity of 3N made by adding carbon 3 wtppm are heated at 1300°C in a hydrogen-containing environment. For the Pd particles after heat treatment, the surface of the Pd particles was observed by SEM, and the number of micropores was 20-50. Then, the Pd particles (evaporation material) were filled in a crucible of a vacuum evaporation device, and then preheated by an electron beam, and then melted, and the bumping phenomenon was observed. As a result, there are 1 to 5 defects (particles) on the wafer due to bumping.
(實施例11) 將添加碳5 wtppm所製作之純度3N之Au-Sb顆粒於含氫環境中、800℃進行加熱。對於熱處理後之Au-Sb顆粒,利用SEM觀察其表面,結果微孔個數為5~10個。 繼而,將該Au-Sb顆粒(蒸鍍材料)填充於真空蒸鍍裝置之坩堝內,利用電子束進行預加熱後,使之熔融,觀察爆沸現象。其結果,因爆沸現象產生之晶圓上之缺陷(粒子)為1~10個。(Example 11) The Au-Sb particles with a purity of 3N made by adding carbon 5 wtppm were heated at 800°C in a hydrogen-containing environment. For the Au-Sb particles after heat treatment, the surface of the Au-Sb particles was observed by SEM, and the number of micropores was 5-10. Then, the Au-Sb particles (evaporation material) were filled in a crucible of a vacuum evaporation device, and then preheated by an electron beam, and then melted, and the bumping phenomenon was observed. As a result, there are 1-10 defects (particles) on the wafer due to bumping.
(實施例12) 將添加碳5 wtppm所製作之純度3N之Au-As顆粒於含氫環境中、800℃進行加熱。對於熱處理後之Au-As顆粒,利用SEM觀察其表面,結果微孔個數為1~10個。 繼而,將該Au-As顆粒(蒸鍍材料)填充於真空蒸鍍裝置之坩堝內,利用電子束進行預加熱後,使之熔融,觀察爆沸現象。其結果,因爆沸現象產生之晶圓上之缺陷(粒子)為1~10個。(Example 12) The Au-As particles with a purity of 3N made by adding 5 wtppm of carbon are heated in a hydrogen-containing environment at 800°C. For the Au-As particles after heat treatment, the surface of the Au-As particles was observed by SEM, and the number of micropores was 1-10. Then, the Au-As particles (evaporation material) were filled in a crucible of a vacuum evaporation device, and then preheated by an electron beam, and then melted, and the bumping phenomenon was observed. As a result, there are 1-10 defects (particles) on the wafer due to bumping.
[表1]
根據本發明,可於蒸鍍材料之熔解時抑制爆沸現象,藉此,可減少附著於基板上之粒子。本實施形態之蒸鍍材料可廣泛地利用於使用真空蒸鍍法之形成電子零件、半導體裝置、光學薄膜、磁裝置、LED、有機EL、LCD等中之元件。According to the present invention, the bumping phenomenon can be suppressed when the vapor deposition material is melted, thereby reducing the particles adhering to the substrate. The vapor deposition material of this embodiment can be widely used for forming electronic parts, semiconductor devices, optical thin films, magnetic devices, LEDs, organic EL, LCDs, etc. using vacuum vapor deposition methods.
無no
[圖1]係習知例之蒸鍍材料之表面利用SEM(5000倍)所觀察到之圖像。 [圖2]係實施例1之蒸鍍材料之表面利用SEM(5000倍)所觀察到之圖像。 [圖3]係實施例7之蒸鍍材料之表面利用SEM(5000倍)所觀察到之圖像。[Figure 1] The surface of the vapor-deposited material of the conventional example was observed with SEM (5000 times). [Figure 2] The surface of the vapor-deposited material of Example 1 was observed by SEM (5000 times). [Figure 3] The surface of the vapor-deposited material of Example 7 was observed by SEM (5000 times).
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