TW202046439A - 具有粉末塗層的靜電卡盤 - Google Patents
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Abstract
提供一種靜電卡盤(ESC)。提供一ESC主體。一有機塗層設置在該ESC主體的至少一表面上。
Description
[相關申請案的交互參照] 本申請案主張2019年2月22日申請之美國專利申請案第62/809,274號的優先權利益,其以引用方式針對所有目的併入本文。
本揭示內容係關於電漿處理腔室,用於形成半導體裝置於半導體晶圓上。
在半導體裝置的形成中,電漿處理腔室用於處理半導體裝置。 電漿處理腔室可使用靜電卡盤。
為了達成前述並且根據本揭示內容的目的,提供一種靜電卡盤(ESC)。 提供ESC主體。 有機塗層設置在ESC主體的至少一表面上。
在另一體現中,提供一種方法。提供靜電卡盤(ESC)主體。將有機塗層施加在ESC主體的至少一表面上。
本揭示內容的這些與其他特徵將在本揭示內容的詳細說明中並結合以下圖式更詳細地敘述於下。
現在將參考如附圖中所示的其一些較佳實施例來詳細敘述本揭示內容。在下面的敘述中,提出許多具體細節以提供本揭示內容的全面理解。但是,對本領域熟習技藝者而言顯而易見的是,可在沒有一些或所有這些具體細節的情況下實施本揭示內容。在其他情況下,並未詳細敘述熟知的製程步驟及/或結構,以免不必要地模糊本揭示內容。
提供耐電弧性的材料通常是金屬氧化物。 金屬氧化物通常很脆,容易開裂,並且具有相對較低的熱膨脹係數(CTE)。通過橫跨大溫度範圍的循環所引起的任何開裂將導致電崩潰,導致部件失效。
靜電卡盤(ESC)基板上的目前保護塗層包括陽極化、陶瓷噴塗層或陽極化頂部上的噴塗層。在某些產品中使用直接生長在鋁基板表面上的氮化鋁塗層。資料顯示,當在鋁的平坦表面上時,在0.002英寸厚的塗層上施加大約2千伏(kV)的情況下,陽極化會崩潰,而在角半徑上施加600伏(V)的情況下會崩潰。如果噴塗垂直施加於表面,將能在平坦表面上承受高達10 kV,但角半徑上僅約4-5 kV。噴塗層可用聚合物密封,但當在腔室操作條件下暴露於特別是含氟的電漿時,所有已知的有效密封方法將劣化。現有技術在這些值方面到達了其極限,因為試圖藉由製造更厚的塗層來進一步改善崩潰現象會導致因熱循環所致的開裂,此係因為基板的CTE與塗層材料的CTE之間不匹配。
ESC的金屬部件相較於腔室主體來說可能遭受較大的電壓。因此,希望保護ESC的金屬部件免於化學劣化與放電。
圖1是根據實施例的ESC 100的示意剖視圖。ESC 100包含ESC主體104。在此實例中,ESC主體104是具有冷卻通道106的基板。在此實例中,ESC主體104由導電材料製成。在此實例中,ESC主體104是鋁。有機塗層108塗佈ESC主體104的至少一表面。在一實施例中,有機塗層108包覆ESC主體104。在此實例中,有機塗層108包含具有金屬氧化物填料的聚合物。在此實例中,聚合物是聚矽氧烷,且金屬氧化物填料是氧化鋁奈米粒子。在此實施例中,填料是混合至聚合物中的金屬氧化物奈米粒子。在此實例中,ESC主體104與有機塗層108都暴露於末端-OH(氫氧根)基團。這種暴露可藉由化學或電漿處理來實行。可將有機塗層108分配為液體或凝膠,以塗佈ESC主體104的至少一表面。對於末端-(OH)基團的暴露可改善有機塗層108的黏附性。有機塗層108然後固化至定位。
原子層沉積(ALD)塗層112塗佈有機塗層108的至少一表面。在此實例中,ALD塗層112包括氧化釔、氧化鋁、或釔鋁石榴石(YAG) 的至少一者。圖2是施加ALD塗層112的實施例的流程圖。將ESC 100加熱至ALD溫度。ALD溫度至少是最高製程溫度。最高製程溫度是在電漿處理腔室中使用ESC 100的期間預期ESC 100要承受的最高溫度。沉積前驅物(步驟212)。在此實例中,前驅物是三甲基鋁。提供第一沖洗(步驟214)。在此實例中,流動N2
的沖洗氣體,以沖洗未沉積的前驅物。施加反應物(步驟216)。在此實例中,反應物是水。反應物將鋁氧化,以形成單層氧化鋁。提供第二沖洗(步驟218)。在此實例中,流動N2
的沖洗氣體,以沖洗以蒸氣形式保留的反應物。重複此製程達複數個循環,形成ALD塗層112。
ESC 100安裝在電漿處理腔室中。電漿處理腔室用於電漿處理基板。
提供填充有金屬氧化物的聚合物的有機塗層108之優點在於,聚合物與金屬氧化物兩者的複合物可藉由改變兩個適當選擇的成分的比例而連續且輕易地調整。例如,可產生聚矽氧烷與氧化鋁奈米粒子的共混物,其精確地匹配ESC主體104的熱膨脹係數。如果對ESC主體104與有機塗層的聚合物進行適當的表面處理,已知此種材料可實現強大的黏附性。這種聚合物與金屬氧化物的混合物價格便宜,且可大量生產。與ESC 100相關的高介電崩潰電壓可藉由調整有機塗層108的厚度來調整。當塗層變得太厚時,先前技術中所教示的塗層的厚度可能受到開裂的限制。然而,有機塗層108可定制為不受這種限制。
當ESC 100用於電漿處理腔室中的電漿處理時,ALD塗層112保護有機塗層108不受腐蝕。ALD塗層112呈共形、緻密且不透氣。因此,ALD塗層112密封有機塗層108。ALD塗層112可能在處理期間由於ESC主體104與ALD塗層112之間的熱膨脹係數差異而開裂。為了消除或減少ALD塗層112的開裂,將ESC 100加熱至ALD溫度。ALD溫度至少是在電漿處理腔室中的處理期間預計將使用的最高溫度。由於電漿處理腔室的使用與不使用都將ESC 100保持在低於ALD溫度之溫度,因此ESC主體104與ALD塗層112之間的熱膨脹係數差異在ALD塗層112上保持壓縮力。該壓縮力是由於ESC主體104的熱膨脹係數大於ALD塗層112的熱膨脹係數且ESC 100的溫度小於ALD溫度所導致。在一些實施例中,ALD塗層112在小於20o
C的溫度下處於壓縮力下。在其他實施例中,ALD塗層112在小於100o
C的溫度下處於壓縮力下。在又其他實施例中,ALD塗層112在小於200o
C的溫度下處於壓縮力下。此外,可選擇聚合物與金屬氧化物填料以及聚合物與金屬氧化物填料的比例,以同樣減少熱膨脹係數差異所導致的壓力。
其他實施例可不具有ALD塗層。 這種實施例將具有耐電漿腐蝕的有機塗層。圖3是在沒有ALD塗層的情況下塗佈ESC的實施例的流程圖。提供ESC主體(步驟304)。圖4A是ESC 400的ESC主體404的剖視圖。在此實例中,ESC主體404是鋁。另外,ESC主體404具有一或多個特徵408。特徵408可為冷卻通道或形成在ESC主體404中的其他特徵。在此實例中,特徵408具有不在ESC主體404外部的位置之視線範圍內的表面。ESC主體404暴露於靜電電位。ESC主體404的表面暴露於聚合物的帶電粒子,以用有機塗層塗佈ESC主體404(步驟308)。在此實例中,帶電粒子為氟塑料粒子。帶電粒子係靜電吸引至ESC主體404的表面,形成粒子塗層。將聚合物的帶電粒子退火至ESC主體404,以形成有機塗層(步驟312)。圖4B是將有機塗層412退火至ESC主體404之後的ESC 400的剖視圖。
此實施例使用靜電電位來吸引粒子,以塗佈具有複雜的幾何形狀之表面,其無法使用視線沉積法進行塗佈。具體地,拐角、開口、與孔的內部可使用此方法覆蓋。另外,各種實施例提供更均勻的層。各種實施例可使用可插入特徵中的電極,以增加不在視線範圍內的表面上的沉積。電極不接觸ESC主體404。各種實施例提供具有高耐腐蝕性與高耐受電壓的有機塗層412。在一些不同的實施例中,有機塗層是氟塑料,例如聚四氟乙烯、聚偏二氟乙烯、聚氟乙烯、或聚氯三氟乙烯、或氟彈性體,例如偏二氟乙烯與六氟丙烯的共聚物、四氟乙烯或丙烯的共聚物。
在其他實施例中,可使用其他有機塗層。例如,有機塗層可包含聚醚醯亞胺(PEI),例如Ultem。
在其他實施例中,有機塗層可包含聚對二甲苯。聚對二甲苯是化學氣相沉積的聚對二甲苯聚合物的商品名。在一實施例中,在ESC主體的單側上形成共形的聚對二甲苯塗層。在此實例中,共形的聚對二甲苯塗層具有高的耐化學性(除了氧電漿之外),以及對於氣體與濕氣來說非常低的滲透性,還有介電強度。如果ESC將用於氧電漿中,可在聚對二甲苯塗層上施加ALD塗層。
在其他實施例中,可用藉由其他方法沉積的陶瓷塗層代替ALD塗層。這種陶瓷塗層可包含金屬氧化物陶瓷。在其他實施例中,有機塗層可包含氟化聚合物、全氟化聚合物、或聚合物與陶瓷的複合物之一或多者。在各種實施例中,可將有機塗層處理為具有親水性外表面。
圖5是用於電漿處理基板的電漿處理系統500的示意圖,其中在一實施例中可安裝該組件。在一或更多實施例中,電漿處理系統500包含在電漿處理腔室504內的氣體分配板506(其提供氣體入口)與ESC 100,電漿處理腔室504由腔室壁550包圍。在電漿處理腔室504內,基板507位於ESC 100的頂部上。ESC 100可提供來自ESC電源548的偏壓。氣體源510通過氣體分配板506連接至電漿處理腔室504。ESC溫度控制器551連接至ESC 100,並且提供對ESC 100的溫度控制。射頻(RF)電源530提供RF功率至ESC 100與上電極。在此實施例中,上電極是氣體分配板506。在一較佳實施例中,13.56兆赫茲(MHz)、2 MHz、60 MHz及/或可選的27 MHz電源構成RF電源530與ESC電源548。控制器535可控制地連接至RF電源530、ESC電源548、排氣泵520與氣體源510。高流量襯管560是電漿處理腔室504內的襯管。高流量襯管560限制來自氣體源的氣體並具有狹槽562。狹槽562保持從氣體源510傳遞至排氣泵520的氣體的受控流動。這種電漿處理腔室的實例是加利福尼亞州的Lam Research Corporation of Fremont製造的Exelan FlexTM
蝕刻系統。處理腔室可為電容耦合式電漿(capacitively coupled plasma,CCP) 反應器或感應耦合式電漿(inductively coupled plasma,ICP)反應器。
電漿處理腔室504用於電漿處理基板507。電漿處理可為蝕刻、沉積、鈍化、或另一電漿製程之一或更多種製程。電漿處理也可與非電漿處理組合執行。這種製程可使ESC 100暴露於含有鹵素及/或氧氣的電漿。
雖然已經根據幾種較佳實施例敘述了本揭示內容,存在變更、修改、交換、與各種替代均等物,其均落入本揭示內容的範圍內。還應該注意的是,存在實現本揭示內容的方法與設備的許多替代方式。因此,意圖將以下所附申請專利範圍解釋為包括所有此類更改、修改、交換、與各種替代均等物為落入本揭示內容的真實精神與範圍內。
100:靜電卡盤(ESC)
104:ESC主體
106:冷卻通道
108:有機塗層
112:原子層沉積(ALD)塗層
212:步驟
214:步驟
216:步驟
218:步驟
308:步驟
312:步驟
400:ESC
404:ESC主體
408:特徵
412:有機塗層
500:電漿處理系統
504:電漿處理腔室
506:氣體分配板
507:基板
510:氣體源
520:排氣泵
530:射頻(RF)電源
535:控制器
548:ESC電源
550:腔室壁
551:ESC溫度控制器
560:高流量襯管
562:狹槽
藉由實例且非限制的方式在附圖的圖式中例示本揭示內容,且其中相似的元件符號指示類似的元件,且其中:
圖1是靜電卡盤的實施例的剖視圖。
圖2是實施例的原子層沉積的流程圖。
圖3是實施例的有機塗層製程的流程圖。
圖4A-圖4B是另一實施例中的靜電卡盤的剖視圖。
圖5是可採用一實施例的電漿處理腔室的示意圖。
100:靜電卡盤(ESC)
104:ESC主體
106:冷卻通道
108:有機塗層
112:原子層沉積(ALD)塗層
Claims (23)
- 一種靜電卡盤(ESC) ,包含: 一ESC主體;及 一有機塗層,該有機塗層設置在該ESC主體的至少一表面上。
- 如請求項1之靜電卡盤,另包含一原子層沉積塗層,該原子層沉積塗層設置在該有機塗層上。
- 如請求項2之靜電卡盤,其中該有機塗層包含一聚合物與一金屬氧化物填料。
- 如請求項3之靜電卡盤,其中該原子層沉積塗層包含一陶瓷塗層。
- 如請求項3之靜電卡盤,其中該原子層沉積塗層包含氧化釔、氧化鋁、與YAG的至少一者。
- 如請求項3之靜電卡盤,其中該原子層沉積塗層係配置為在低於20°C的溫度下在壓縮力下操作。
- 如請求項2之靜電卡盤,其中該原子層沉積塗層包覆該有機塗層。
- 如請求項1之靜電卡盤,其中該有機塗層包含一聚合物與氧化鋁。
- 如請求項1之靜電卡盤,其中該有機塗層包含Ultem、氟化聚合物、全氟化聚合物、聚對二甲苯、或聚合物與陶瓷的複合物之至少一者。
- 如請求項1之靜電卡盤,其中該有機塗層包含氧化鋁。
- 如請求項1之靜電卡盤,其中該有機塗層具有一親水性外表面。
- 如請求項1之靜電卡盤,其中該有機塗層包覆該ESC主體。
- 一種塗佈ESC的方法,包含下列步驟: 提供一ESC主體;及 施加一有機塗層於該ESC主體的至少一表面上。
- 如請求項13之塗佈ESC的方法,其中該施加該有機塗層之步驟包含: 將該ESC主體暴露至一靜電電位; 將該ESC主體暴露至粒子,其中該等粒子靜電吸附至該ESC主體的該至少一表面,形成一粒子塗層;及 將該粒子塗層退火。
- 如請求項14之塗佈ESC的方法,其中該等粒子包含氟塑料與氟彈性體的至少一者。
- 如請求項14之塗佈ESC的方法,另包含使該有機塗層的一表面具有親水性。
- 如請求項14之塗佈ESC的方法,其中該ESC主體具有一特徵,且另包含將一電極放置在該ESC主體中的該特徵內,其中該電極不接觸該ESC主體。
- 如請求項14之塗佈ESC的方法,另包含以一含有氧化鋁的塗層塗佈該有機塗層。
- 如請求項14之塗佈ESC的方法,另包含沉積一原子層沉積塗層在該有機塗層上。
- 如請求項19之塗佈ESC的方法,其中該有機塗層包括一金屬氧化物填料。
- 如請求項14之塗佈ESC的方法,另包含將該有機塗層退火或固化。
- 如請求項14之塗佈ESC的方法,其中該有機塗層包覆該ESC主體。
- 如請求項14之塗佈ESC的方法,其中該有機塗層包含一聚合物與氧化鋁。
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JP2005117064A (ja) * | 1993-06-24 | 2005-04-28 | Tokyo Electron Ltd | 真空処理装置 |
US5452510A (en) * | 1993-12-20 | 1995-09-26 | International Business Machines Corporation | Method of making an electrostatic chuck with oxide insulator |
KR100430643B1 (ko) * | 1994-01-31 | 2004-05-12 | 어플라이드 머티어리얼스, 인코포레이티드 | 두께가 균일한 절연체 막을 갖는 정전기 척 |
US6175485B1 (en) * | 1996-07-19 | 2001-01-16 | Applied Materials, Inc. | Electrostatic chuck and method for fabricating the same |
US5905626A (en) * | 1998-04-12 | 1999-05-18 | Dorsey Gage, Inc. | Electrostatic chuck with ceramic pole protection |
US6067222A (en) * | 1998-11-25 | 2000-05-23 | Applied Materials, Inc. | Substrate support apparatus and method for fabricating same |
JP2009081223A (ja) * | 2007-09-26 | 2009-04-16 | Tokyo Electron Ltd | 静電チャック部材 |
US8023247B2 (en) * | 2008-12-10 | 2011-09-20 | Axcelis Technologies, Inc. | Electrostatic chuck with compliant coat |
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US20160379806A1 (en) * | 2015-06-25 | 2016-12-29 | Lam Research Corporation | Use of plasma-resistant atomic layer deposition coatings to extend the lifetime of polymer components in etch chambers |
US9850573B1 (en) * | 2016-06-23 | 2017-12-26 | Applied Materials, Inc. | Non-line of sight deposition of erbium based plasma resistant ceramic coating |
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US10186400B2 (en) * | 2017-01-20 | 2019-01-22 | Applied Materials, Inc. | Multi-layer plasma resistant coating by atomic layer deposition |
US20180337026A1 (en) * | 2017-05-19 | 2018-11-22 | Applied Materials, Inc. | Erosion resistant atomic layer deposition coatings |
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