TW202046414A - Package structure - Google Patents

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TW202046414A
TW202046414A TW108120180A TW108120180A TW202046414A TW 202046414 A TW202046414 A TW 202046414A TW 108120180 A TW108120180 A TW 108120180A TW 108120180 A TW108120180 A TW 108120180A TW 202046414 A TW202046414 A TW 202046414A
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package
strip
annular
groove
chip
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TW108120180A
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Chinese (zh)
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蘇庭鋒
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力成科技股份有限公司
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Abstract

A package structure including a circuit board, a first package, a second package, a plurality of conductive connectors, and a plurality of conductive terminals is provided. The first package is disposed on the circuit board. The first package includes a circuit structure, a chip, an encapsulant, and a plurality of conductive structures. The chip is disposed on the circuit structure. The encapsulant encapsulates the chip and has at least one recess. The conductive structures penetrate through the encapsulant. The second package is disposed on the first package. The conductive connectors are located between the first package and the second package. The conductive terminals are disposed between the circuit board and the first package. A thermal resistance between the chip and the conductive connectors is greater than a thermal resistance between the chip and the conductive terminals.

Description

封裝結構Package structure

本發明是有關於一種封裝結構,且特別是有關於一種可以減少側向散熱的封裝結構。The present invention relates to a packaging structure, and particularly to a packaging structure that can reduce lateral heat dissipation.

近年來,電子設備對於人類的生活越來越重要。為了加速各種功能的整合,可以將多個積體電路封裝結構彼此堆疊,以在封裝堆疊(package-on-package,POP)結構中提供額外的功能性。In recent years, electronic devices have become more and more important to human life. To accelerate the integration of various functions, multiple integrated circuit packaging structures can be stacked on top of each other to provide additional functionality in a package-on-package (POP) structure.

然而,在封裝堆疊結構中,舉例而言,第一封裝件中的晶片運作時產生的熱能經常會往側向傳遞,再傳遞至第二封裝件中的晶片,進而使熱能不斷地堆積在第二封裝件中的晶片內。如此一來,第二封裝件中的晶片可能會因為過熱而導致效能衰減或使用壽命縮短。因此,如何降低第二封裝件中的晶片因為過熱而導致效能衰減的問題,已成為本領域研究人員的一大挑戰。However, in the package stack structure, for example, the heat energy generated during the operation of the chip in the first package is often transferred laterally, and then transferred to the chip in the second package, so that the heat is continuously accumulated in the second package. 2. Inside the chip in the package. As a result, the chip in the second package may be overheated, resulting in performance degradation or shortened service life. Therefore, how to reduce the performance degradation of the chip in the second package due to overheating has become a major challenge for researchers in the field.

本發明提供一種封裝結構,其可以有效減少第一封裝件中的晶片所產生的熱經由側向傳遞,進而降低第二封裝件中的晶片因為過熱而導致效能衰減的問題。The present invention provides a package structure, which can effectively reduce the lateral transfer of heat generated by a chip in a first package, thereby reducing the problem of performance degradation caused by overheating of a chip in a second package.

本發明的封裝結構包括線路板、第一封裝件、第二封裝件、多個導電連接件以及多個導電端子。第一封裝件配置於線路板上。第一封裝件包括線路結構、晶片、密封體、多個導電結構。晶片配置於線路結構上。密封體密封晶片且具有至少一凹槽。多個導電結構貫穿密封體。第二封裝件配置於第一封裝件上。多個導電連接件位於第一封裝件與第二封裝件之間。多個導電端子配置於線路板上與第一封裝件之間。晶片與多個導電連接件之間的熱阻大於晶片與多個導電端子之間的熱阻。The packaging structure of the present invention includes a circuit board, a first packaging component, a second packaging component, a plurality of conductive connecting members and a plurality of conductive terminals. The first package is configured on the circuit board. The first package includes a circuit structure, a chip, a sealing body, and a plurality of conductive structures. The chip is arranged on the circuit structure. The sealing body seals the wafer and has at least one groove. A plurality of conductive structures penetrate the sealing body. The second package is configured on the first package. A plurality of conductive connections are located between the first package and the second package. A plurality of conductive terminals are arranged between the circuit board and the first package. The thermal resistance between the chip and the plurality of conductive connections is greater than the thermal resistance between the chip and the plurality of conductive terminals.

基於上述,本發明的封裝結構中,由於密封體具有至少一凹槽,因此,可以有效減少第一封裝件的晶片所產生的熱經由側向傳遞至導電連接件再傳遞至第二封裝件的晶片,大部分的熱可以經由多個導電端子逸散出封裝結構,進而降低第二封裝件的晶片因為過熱而導致效能衰減的問題。Based on the above, in the package structure of the present invention, since the sealing body has at least one groove, it can effectively reduce the heat generated by the chip of the first package from being laterally transferred to the conductive connector and then to the second package. For the chip, most of the heat can escape from the package structure through the plurality of conductive terminals, thereby reducing the problem of performance degradation of the chip of the second package due to overheating.

為讓本發明的上述特徵和優點能更明顯易懂,下文特舉實施例,並配合所附圖式作詳細說明如下。In order to make the above-mentioned features and advantages of the present invention more comprehensible, the following specific embodiments are described in detail in conjunction with the accompanying drawings.

本文所使用之方向用語(例如,上、下、右、左、前、後、頂部、底部)僅作為參看所繪圖式使用且不意欲暗示絕對定向。The directional terms used herein (for example, up, down, right, left, front, back, top, bottom) are only used as a reference drawing and are not intended to imply absolute orientation.

參照本實施例之圖式以更全面地闡述本發明。然而,本發明亦可以各種不同的形式體現,而不應限於本文中所述之實施例。圖式中的層或區域的厚度、尺寸或大小會為了清楚起見而放大。相同或相似之參考號碼表示相同或相似之元件,以下段落將不再一一贅述。The present invention will be explained more fully with reference to the drawings of this embodiment. However, the present invention can also be embodied in various different forms and should not be limited to the embodiments described herein. The thickness, size, or size of the layers or regions in the drawings are exaggerated for clarity. The same or similar reference numbers indicate the same or similar elements, and the following paragraphs will not repeat them one by one.

圖1A是依據本發明第一實施例的封裝結構的部分上視示意圖。圖1B是圖1A之密封體對應環形輪廓處的立體示意圖。圖1C是沿著圖1A之剖線A-A’的剖面示意圖。圖1D是圖1C之熱傳導路徑剖面示意圖。FIG. 1A is a schematic partial top view of the package structure according to the first embodiment of the present invention. Fig. 1B is a three-dimensional schematic diagram of the sealing body in Fig. 1A corresponding to the annular contour. Fig. 1C is a schematic cross-sectional view taken along the section line A-A' of Fig. 1A. Fig. 1D is a schematic cross-sectional view of the heat conduction path of Fig. 1C.

請先參照圖1A至圖1C,本實施例的封裝結構100包括線路板110、第一封裝件120、第二封裝件130、多個導電連接件140以及多個導電端子150。線路板110可以是印刷電路板或是適宜的基板,只要在後續的製程中,前述的線路板110夠承載形成於其上的結構或配置於其上的元件即可。Please refer to FIGS. 1A to 1C first. The package structure 100 of this embodiment includes a circuit board 110, a first package 120, a second package 130, a plurality of conductive connections 140 and a plurality of conductive terminals 150. The circuit board 110 may be a printed circuit board or a suitable substrate, as long as the aforementioned circuit board 110 can carry the structure formed thereon or the components arranged thereon in the subsequent manufacturing process.

第一封裝件120配置於線路板110上。第一封裝件120可以包括線路結構122、晶片124、密封體126以及多個導電結構128。The first package 120 is disposed on the circuit board 110. The first package 120 may include a circuit structure 122, a chip 124, a sealing body 126 and a plurality of conductive structures 128.

線路結構122具有第一表面122a以及相對於第一表面122a的第二表面122b。線路結構122可以是印刷電路板或是具有多重佈線層的板狀體,但本發明不限於此。The circuit structure 122 has a first surface 122a and a second surface 122b opposite to the first surface 122a. The circuit structure 122 may be a printed circuit board or a plate-shaped body with multiple wiring layers, but the invention is not limited thereto.

晶片124配置於線路結構122上。晶片124可以是以其主動面面向線路結構122的第一表面122a的方式配置於線路結構122的第一表面122a上。在一實施例中,晶片124例如是以覆晶接合(flip-chip bonding)的方式配置於線路結構122的第一表面122a上,使晶片124電性連接線路結構122。晶片124可以是處理器(application processor, AP),但本發明不限於此。The chip 124 is disposed on the circuit structure 122. The chip 124 may be disposed on the first surface 122 a of the circuit structure 122 in such a manner that its active surface faces the first surface 122 a of the circuit structure 122. In one embodiment, the chip 124 is disposed on the first surface 122 a of the circuit structure 122 by means of flip-chip bonding, so that the chip 124 is electrically connected to the circuit structure 122. The chip 124 may be an application processor (AP), but the present invention is not limited thereto.

密封體126密封晶片124且具有至少一凹槽1261。在一實施例中,密封體126可以是不裸露出晶片124的背面。換句話說,密封體126的頂面126a可以是高於晶片124的背面。The sealing body 126 seals the wafer 124 and has at least one groove 1261. In an embodiment, the sealing body 126 may not expose the back surface of the wafer 124. In other words, the top surface 126 a of the sealing body 126 may be higher than the back surface of the wafer 124.

在一實施例中,凹槽1261可以是從密封體126的頂面126a延伸至密封體126中,且凹槽1261不裸露出線路結構122。In an embodiment, the groove 1261 may extend from the top surface 126 a of the sealing body 126 into the sealing body 126, and the groove 1261 does not expose the circuit structure 122.

在一實施例中,凹槽1261的深度Ha可以是密封體126的深度Hb的1/2或3/4,但本發明不限於此,凹槽1261的深度Ha可視實際設計而定。In an embodiment, the depth Ha of the groove 1261 may be 1/2 or 3/4 of the depth Hb of the sealing body 126, but the present invention is not limited to this, and the depth Ha of the groove 1261 may be determined according to actual design.

請參照圖1A,在本實施例中,凹槽1261的配置位置可以構成環形輪廓圍繞晶片124。舉例而言,環形輪廓的凹槽1261可以是環形凹槽。Please refer to FIG. 1A, in this embodiment, the configuration position of the groove 1261 can form an annular contour around the wafer 124. For example, the groove 1261 of the annular profile may be an annular groove.

在本實施例中,凹槽1261由上方往下看的形狀例如是矩形,但本發明不限於此,環形凹槽的形狀可視實際設計而定。In this embodiment, the shape of the groove 1261 viewed from above is, for example, a rectangle, but the present invention is not limited to this, and the shape of the annular groove may be determined by actual design.

在一實施例中,凹槽1261可以藉由模具(未繪示)進行模封製程形成,但本發明不限於此。在其他實施例中,凹槽1261可以藉由蝕刻、雷射鑽孔或適宜的製程形成。In one embodiment, the groove 1261 may be formed by a mold (not shown) through a molding process, but the invention is not limited thereto. In other embodiments, the groove 1261 can be formed by etching, laser drilling or a suitable process.

多個導電結構128貫穿密封體126。如圖1A所示,多個導電結構128可以是圍繞晶片124與凹槽1261。換句話說,凹槽1261位於晶片124與多個導電結構128之間。The plurality of conductive structures 128 penetrate the sealing body 126. As shown in FIG. 1A, a plurality of conductive structures 128 may surround the wafer 124 and the groove 1261. In other words, the groove 1261 is located between the wafer 124 and the plurality of conductive structures 128.

在一實施例中,導電結構128可以是模塑通孔(through molding via, TMV)或導電柱(conductive pillars),但本發明不限於此。In an embodiment, the conductive structure 128 may be a through molding via (TMV) or conductive pillars, but the invention is not limited thereto.

第二封裝件130配置於第一封裝件120上。第二封裝件130可以包括線路結構132、多個晶片134以及密封體136。多個晶片134配置於線路結構132上。密封體136密封多個晶片134。晶片134可以是動態隨機存取記憶體(Dynamic Random Access Memory, DRAM),但本發明不限於此。線路結構132以及密封體136類似於線路結構122以及密封體126,於此不再贅述。The second package 130 is disposed on the first package 120. The second package 130 may include a circuit structure 132, a plurality of chips 134 and a sealing body 136. The multiple chips 134 are arranged on the circuit structure 132. The sealing body 136 seals the plurality of wafers 134. The chip 134 may be a dynamic random access memory (Dynamic Random Access Memory, DRAM), but the invention is not limited thereto. The circuit structure 132 and the sealing body 136 are similar to the circuit structure 122 and the sealing body 126, and will not be repeated here.

在本實施例中,晶片134可以以打線接合(wire bonding)的方式與線路結構132電性連接,但本發明不限於此。在未繪示的實施例中,晶片134可以以覆晶的方式與線路結構132電性連接。多個晶片134之間可以是以晶粒黏著膜(die attach film, DAF)進行連接,但本發明不限於此。應說明的是,圖1C中繪示的兩個晶片134僅為示意,本發明不限制多個晶片134的個數及尺寸,可視實際需求而定。In this embodiment, the chip 134 may be electrically connected to the circuit structure 132 in a wire bonding manner, but the invention is not limited to this. In an embodiment not shown, the chip 134 may be electrically connected to the circuit structure 132 in a flip chip manner. The multiple chips 134 may be connected by die attach film (DAF), but the invention is not limited to this. It should be noted that the two wafers 134 shown in FIG. 1C are only for illustration, and the number and size of the multiple wafers 134 are not limited in the present invention, which can be determined according to actual requirements.

多個導電連接件140位於第一封裝件120與第二封裝件130之間。多個導電端子150配置於線路板110與第一封裝件120之間。換句話說,多個導電端子150可以是配置於線路結構122的第二表面122b上。A plurality of conductive connection members 140 are located between the first package 120 and the second package 130. The plurality of conductive terminals 150 are disposed between the circuit board 110 and the first package 120. In other words, the plurality of conductive terminals 150 may be disposed on the second surface 122b of the circuit structure 122.

在本實施例中,由於密封體126具有至少一凹槽1261,因此,晶片124與多個導電連接件140之間的熱阻(thermal resistance)大於晶片124與多個導電端子150之間的熱阻。在此,熱阻為物體抵抗傳熱的能力。In this embodiment, since the sealing body 126 has at least one groove 1261, the thermal resistance between the chip 124 and the plurality of conductive connectors 140 is greater than the thermal resistance between the chip 124 and the plurality of conductive terminals 150. Hinder. Here, thermal resistance is the ability of an object to resist heat transfer.

因此,如圖1D所示,在本實施例中,可以有效減少第一封裝件120的晶片124所產生的熱經由側向傳遞至導電連接件140再傳遞至第二封裝件130的晶片134,大部分的熱可以經由多個導電端子150逸散出封裝結構100,進而降低第二封裝件130的晶片134因為過熱而導致效能衰減的問題。Therefore, as shown in FIG. 1D, in this embodiment, the heat generated by the chip 124 of the first package 120 can be effectively reduced through the lateral transfer to the conductive connector 140 and then to the chip 134 of the second package 130. Most of the heat can escape from the package structure 100 via the conductive terminals 150, thereby reducing the problem of performance degradation of the chip 134 of the second package 130 due to overheating.

多個導電端子150具有彼此相對的第一端151及第二端152,其中第一端151較第二端152接近晶片124。多個導電端子150的第一端151可以電耦接及/或熱耦接第一封裝件120,而多個導電端子150的第二端152可以電耦接及/或熱耦接線路板110。The plurality of conductive terminals 150 have a first end 151 and a second end 152 opposite to each other, wherein the first end 151 is closer to the chip 124 than the second end 152 is. The first ends 151 of the plurality of conductive terminals 150 may be electrically and/or thermally coupled to the first package 120, and the second ends 152 of the plurality of conductive terminals 150 may be electrically and/or thermally coupled to the circuit board 110 .

請參照圖1B,密封體126對應於環形輪廓處具有多個截面積Am,而密封體126對應於每一導電端子150的第一端151具有表面積Af。密封體126對應於環形輪廓處的總截面積可以是小於多個第一端151的總表面積,其中密封體126對應於環形輪廓處的總截面積為多個截面積Am的總和,而多個第一端151的總表面積為多個表面積Af的總和。1B, the sealing body 126 has a plurality of cross-sectional areas Am corresponding to the annular profile, and the sealing body 126 has a surface area Af corresponding to the first end 151 of each conductive terminal 150. The total cross-sectional area of the sealing body 126 corresponding to the annular contour may be smaller than the total surface area of the plurality of first ends 151, wherein the total cross-sectional area of the sealing body 126 corresponding to the annular contour is the sum of the plurality of cross-sectional areas Am, and The total surface area of the first end 151 is the sum of the surface areas Af.

在本實施例中,密封體126的熱導率可以是小於導電端子150的熱導率。密封體126的熱導率可以是1W/mK,而導電端子150的熱導率可以是64.2W/mK。在此,熱導率是指材料直接傳導熱能的能力。In this embodiment, the thermal conductivity of the sealing body 126 may be less than the thermal conductivity of the conductive terminal 150. The thermal conductivity of the sealing body 126 may be 1 W/mK, and the thermal conductivity of the conductive terminal 150 may be 64.2 W/mK. Here, thermal conductivity refers to the ability of a material to directly conduct thermal energy.

熱導率的定義如方程式1所示,其中A是導熱體的橫截面積,ΔQ是傳導的熱能,x是兩熱源間導熱體的厚度,ΔT則是溫度差。由於厚度很薄可以忽略,因此,傳導熱能的多少會與熱導率與導熱體的橫截面積的乘積成正比。The definition of thermal conductivity is shown in Equation 1, where A is the cross-sectional area of the heat conductor, ΔQ is the thermal energy to be conducted, x is the thickness of the heat conductor between the two heat sources, and ΔT is the temperature difference. Since the thickness is very thin and can be ignored, the amount of heat conduction is proportional to the product of the thermal conductivity and the cross-sectional area of the heat conductor.

<方程式1>Equation 1>

Figure 02_image001
Figure 02_image001

在本實施例中,由於密封體126對應於環形輪廓處的總截面積小於多個第一端151的總表面積,且密封體126的熱導率可以是小於導電端子150的熱導率,因此,如圖1D所示,第一封裝件120的晶片124所產生大部分的熱都會從導電端子150逸散出封裝結構100,僅有少部分的熱會經由凹槽1261下方側向傳遞至多個導電結構128。換句話說,第一封裝件120的晶片124所產生的熱僅有少部分可以經由導電結構128向上傳遞第二封裝件130的晶片134,進而可以降低第二封裝件130的晶片134因為過熱而導致效能衰減的問題。In this embodiment, since the total cross-sectional area of the sealing body 126 corresponding to the annular profile is smaller than the total surface area of the plurality of first ends 151, and the thermal conductivity of the sealing body 126 may be smaller than the thermal conductivity of the conductive terminal 150, As shown in FIG. 1D, most of the heat generated by the chip 124 of the first package 120 will escape from the conductive terminal 150 out of the package structure 100, and only a small part of the heat will be laterally transferred to the plurality of Conductive structure 128. In other words, only a small part of the heat generated by the chip 124 of the first package 120 can be transferred upwards through the conductive structure 128 to the chip 134 of the second package 130, thereby reducing the overheating of the chip 134 of the second package 130. Causes the problem of performance degradation.

在本實施例中,多個導電端子150可以包括第一導電端子1501與第二導電端子1502。第一導電端子1501於線路結構122上的投影位於凹槽1261環形輪廓於線路結構122上的投影範圍內,而第二導電端子1502於線路結構122上的投影位於凹槽1261環形輪廓於線路結構122上的投影範圍外。In this embodiment, the plurality of conductive terminals 150 may include a first conductive terminal 1501 and a second conductive terminal 1502. The projection of the first conductive terminal 1501 on the circuit structure 122 is located within the projection range of the annular contour of the groove 1261 on the circuit structure 122, and the projection of the second conductive terminal 1502 on the circuit structure 122 is located on the annular contour of the groove 1261 on the circuit structure The projection range on 122 is out of range.

請參照圖1D,由於第一導電端子1501於線路結構122上的投影位於凹槽1261環形輪廓於線路結構122上的投影範圍內,因此晶片124所產生大部分的熱可以更確實地藉由第一導電端子1501逸散出封裝結構100。1D, since the projection of the first conductive terminal 1501 on the circuit structure 122 is within the projection range of the annular contour of the groove 1261 on the circuit structure 122, most of the heat generated by the chip 124 can be more reliably achieved by the first A conductive terminal 1501 escapes from the package structure 100.

在本實施例中,第一封裝件120具有彼此相對的頂面120a及底面120b。晶片124與頂面120a之間的熱阻大於晶片124與底面120b之間的熱阻。因此,晶片124所產生的熱較不易經由晶片124上方傳遞至第二封裝件130,晶片124所產生大部分的熱會從底面120b逸散出封裝結構100。In this embodiment, the first package 120 has a top surface 120a and a bottom surface 120b opposite to each other. The thermal resistance between the wafer 124 and the top surface 120a is greater than the thermal resistance between the wafer 124 and the bottom surface 120b. Therefore, the heat generated by the chip 124 is less likely to be transferred to the second package 130 through the top of the chip 124, and most of the heat generated by the chip 124 will escape from the bottom surface 120b of the package structure 100.

舉例而言,導電連接件140可以是僅位於導電結構128上,使第一封裝件120與第二封裝件130之間具有絕緣間隙G。絕緣間隙G內的絕緣材質的熱導率小於多個導電連接件140的熱導率及多個導電端子150的熱導率。因此,第一封裝件120的晶片124所產生的熱較不易經由晶片124上方的絕緣間隙G傳遞至第二封裝件130。For example, the conductive connection member 140 may be located only on the conductive structure 128 so that there is an insulation gap G between the first package 120 and the second package 130. The thermal conductivity of the insulating material in the insulating gap G is less than the thermal conductivity of the plurality of conductive connectors 140 and the thermal conductivity of the plurality of conductive terminals 150. Therefore, the heat generated by the chip 124 of the first package 120 is less likely to be transferred to the second package 130 through the insulating gap G above the chip 124.

在一實施例中,絕緣間隙G內的所有絕緣材質(例如是空氣)的熱導率都小於多個導電連接件140的熱導率及多個導電端子150的熱導率。In an embodiment, the thermal conductivity of all insulating materials (for example, air) in the insulating gap G is less than the thermal conductivity of the plurality of conductive connectors 140 and the thermal conductivity of the plurality of conductive terminals 150.

在一實施例中,線路結構122的熱導率(Thermal conductivity)大於密封體126的熱導率,因此線路結構122的熱阻可以被忽略。In an embodiment, the thermal conductivity of the circuit structure 122 is greater than the thermal conductivity of the sealing body 126, so the thermal resistance of the circuit structure 122 can be ignored.

封裝結構100包括線路板110、第一封裝件120、第二封裝件130、多個導電連接件140以及多個導電端子150。第一封裝件120配置於線路板110上。第一封裝件120包括線路結構122、晶片124、密封體126、多個導電結構128。晶片124配置於線路結構122上。密封體126密封晶片124且具有至少一凹槽1261。多個導電結構128貫穿密封體126。第二封裝件130配置於第一封裝件120上。多個導電連接件140位於第一封裝件120與第二封裝件130之間。多個導電端子140配置於線路板110與第一封裝件120之間。晶片124與多個導電連接件140之間的熱阻大於晶片124與多個導電端子150之間的熱阻。The package structure 100 includes a circuit board 110, a first package 120, a second package 130, a plurality of conductive connectors 140 and a plurality of conductive terminals 150. The first package 120 is disposed on the circuit board 110. The first package 120 includes a circuit structure 122, a chip 124, a sealing body 126, and a plurality of conductive structures 128. The chip 124 is disposed on the circuit structure 122. The sealing body 126 seals the wafer 124 and has at least one groove 1261. The plurality of conductive structures 128 penetrate the sealing body 126. The second package 130 is disposed on the first package 120. A plurality of conductive connection members 140 are located between the first package 120 and the second package 130. The plurality of conductive terminals 140 are disposed between the circuit board 110 and the first package 120. The thermal resistance between the chip 124 and the plurality of conductive connectors 140 is greater than the thermal resistance between the chip 124 and the plurality of conductive terminals 150.

在封裝結構100中,由於密封體126具有至少一凹槽1261,因此,可以有效減少第一封裝件120的晶片124所產生的熱經由側向傳遞至導電連接件140再傳遞至第二封裝件130的晶片134,大部分的熱可以經由多個導電端子150逸散出封裝結構100,進而降低第二封裝件130的晶片134因為過熱而導致效能衰減的問題。In the package structure 100, since the sealing body 126 has at least one groove 1261, the heat generated by the chip 124 of the first package 120 can be effectively reduced through lateral transfer to the conductive connector 140 and then to the second package. In the chip 134 of the 130, most of the heat can escape from the package structure 100 through the conductive terminals 150, thereby reducing the problem of performance degradation of the chip 134 of the second package 130 due to overheating.

圖2A是依據本發明第二實施例的封裝結構的部分上視示意圖。圖2B是沿著圖2A之剖線B-B’的剖面示意圖。圖2C是圖2B之散熱路徑剖面示意圖。本實施例的封裝結構200與第一實施例的封裝結構100相似,其主要差別在於本實施例的封裝結構200中的第一封裝件220的密封體226具有第一環形凹槽2261、第二環形凹槽2262及第三環形凹槽2263。2A is a schematic partial top view of a package structure according to a second embodiment of the invention. Fig. 2B is a schematic cross-sectional view taken along the line B-B' of Fig. 2A. 2C is a schematic cross-sectional view of the heat dissipation path of FIG. 2B. The packaging structure 200 of this embodiment is similar to the packaging structure 100 of the first embodiment. The main difference is that the sealing body 226 of the first package 220 in the packaging structure 200 of this embodiment has a first annular groove 2261 and a second The second annular groove 2262 and the third annular groove 2263.

在本實施例中,第一環形凹槽2261圍繞晶片124;第二環形凹槽2262圍繞第一環形凹槽2261;而第三環形凹槽2263圍繞第二環形凹槽2262。在一實施例中,第三環形凹槽2263的深度H3大於第二環形凹槽2262的深度H2;而第二環形凹槽2262的深度H2大於第一環形凹槽2261的深度H1。因此,本實施例可以進一步增加傳遞至下方多個導電端子150的熱量。In this embodiment, the first annular groove 2261 surrounds the wafer 124; the second annular groove 2262 surrounds the first annular groove 2261; and the third annular groove 2263 surrounds the second annular groove 2262. In one embodiment, the depth H3 of the third annular groove 2263 is greater than the depth H2 of the second annular groove 2262; and the depth H2 of the second annular groove 2262 is greater than the depth H1 of the first annular groove 2261. Therefore, this embodiment can further increase the amount of heat transferred to the plurality of conductive terminals 150 below.

圖3是依據本發明第三實施例的封裝結構的部分上視示意圖。本實施例的封裝結構300與第一實施例的封裝結構100相似,其主要差別在於本實施例的封裝結構300中的密封體326的凹槽為多個條形凹槽3261,且多個條形凹槽3261的配置位置構成環形輪廓,因此,可以進一步控制熱的傳遞方向。FIG. 3 is a schematic partial top view of a package structure according to a third embodiment of the present invention. The package structure 300 of this embodiment is similar to the package structure 100 of the first embodiment. The main difference is that the groove of the sealing body 326 in the package structure 300 of this embodiment is a plurality of strip-shaped grooves 3261, and a plurality of strips The arrangement position of the shaped groove 3261 constitutes an annular profile, so that the heat transfer direction can be further controlled.

舉例而言,兩相鄰的條形凹槽3261的最短距離可以構成一連接線,因此,在本實施例中,四個條形凹槽3261可以構成八角形的環形輪廓。For example, the shortest distance between two adjacent strip-shaped grooves 3261 can form a connecting line. Therefore, in this embodiment, four strip-shaped grooves 3261 can form an octagonal ring profile.

在本實施例中,條形凹槽3261為直線型,但本發明不限於此,條形凹槽3261可以是曲線型或其他適宜的形狀。In this embodiment, the strip-shaped groove 3261 is linear, but the present invention is not limited to this, and the strip-shaped groove 3261 can be curved or other suitable shapes.

圖4是依據本發明第四實施例的封裝結構的部分上視示意圖。本實施例的封裝結構400與第三實施例的封裝結構300相似,其主要差別在於本實施例的封裝結構400中的密封體426的多個條形凹槽包括多個第一條形凹槽4261、多個第二條形凹槽4262與多個第三條形凹槽4263。4 is a schematic partial top view of a package structure according to a fourth embodiment of the invention. The package structure 400 of this embodiment is similar to the package structure 300 of the third embodiment, and the main difference is that the multiple strip grooves of the sealing body 426 in the package structure 400 of this embodiment include multiple first strip grooves 4261. A plurality of second strip-shaped grooves 4262 and a plurality of third strip-shaped grooves 4263.

在本實施例中,多個第一條形凹槽4261的配置位置構成第一環形輪廓;多個第二條形凹槽4262的配置位置構成第二環形輪廓;而多個第三條形凹槽4263的配置位置構成第三環形輪廓。第一環形輪廓圍繞晶片124;第二環形輪廓圍繞第一環形輪廓;而第三環形輪廓圍繞第二環形輪廓。In this embodiment, the arrangement positions of the plurality of first strip-shaped grooves 4261 constitute a first annular contour; the arrangement positions of the plurality of second strip-shaped grooves 4262 constitute a second annular contour; and the plurality of third strips The arrangement position of the groove 4263 constitutes a third annular profile. The first annular contour surrounds the wafer 124; the second annular contour surrounds the first annular contour; and the third annular contour surrounds the second annular contour.

在本實施例中,沿著剖線C-C’的剖面示意圖類似於圖2B。因此,第三條形凹槽4263的深度大於第二條形凹槽4262的深度,而第二條形凹槽4262的深度大於第一條形凹槽4261的深度。In this embodiment, the cross-sectional schematic diagram along the section line C-C' is similar to that of FIG. 2B. Therefore, the depth of the third strip groove 4263 is greater than the depth of the second strip groove 4262, and the depth of the second strip groove 4262 is greater than the depth of the first strip groove 4261.

在本實施例中,第一條形凹槽4261的總長度L1、第二條形凹槽4262的總長度L2與第三條形凹槽4263的總長度L3基本上相同。In this embodiment, the total length L1 of the first strip-shaped groove 4261, the total length L2 of the second strip-shaped groove 4262, and the total length L3 of the third strip-shaped groove 4263 are substantially the same.

圖5是依據本發明第五實施例的封裝結構的部分上視示意圖。本實施例的封裝結構500與第四實施例的封裝結構400相似,其主要差別在於本實施例的封裝結構500中的密封體526的多個條形凹槽包括多個第一條形凹槽5261、多個第二條形凹槽5262與多個第三條形凹槽5263,其中第三條形凹槽5263的總長度L31小於第二條形凹槽5262的總長度L21;而第二條形凹槽5262的總長度L21小於第一條形凹槽5261的總長度L11。5 is a schematic partial top view of a packaging structure according to a fifth embodiment of the invention. The packaging structure 500 of this embodiment is similar to the packaging structure 400 of the fourth embodiment, the main difference is that the multiple strip grooves of the sealing body 526 in the packaging structure 500 of this embodiment include multiple first strip grooves 5261. A plurality of second strip-shaped grooves 5262 and a plurality of third strip-shaped grooves 5263, wherein the total length L31 of the third strip-shaped groove 5263 is less than the total length L21 of the second strip-shaped groove 5262; The total length L21 of the strip groove 5262 is less than the total length L11 of the first strip groove 5261.

在本實施例中,沿著剖線D-D’的剖面示意圖類似於圖2B。因此,第三條形凹槽5263的深度大於第二條形凹槽5262的深度,而第二條形凹槽5262的深度大於第一條形凹槽5261的深度。In this embodiment, the cross-sectional schematic diagram along the section line D-D' is similar to that of FIG. 2B. Therefore, the depth of the third strip groove 5263 is greater than the depth of the second strip groove 5262, and the depth of the second strip groove 5262 is greater than the depth of the first strip groove 5261.

應說明的是,本發明不限制環形凹槽/條形凹槽的數目,只要多個環形凹槽/條形凹槽的深度從晶片124朝導電結構128逐漸加深,皆屬於本發明的保護範圍。It should be noted that the present invention does not limit the number of annular grooves/stripe grooves, as long as the depths of the plurality of annular grooves/stripe grooves gradually increase from the wafer 124 toward the conductive structure 128, they all fall within the protection scope of the present invention. .

綜上所述,本發明的封裝結構中,由於密封體具有至少一凹槽,因此,可以有效減少第一封裝件的晶片所產生的熱經由側向傳遞至導電連接件再傳遞至第二封裝件的晶片,大部分的熱可以經由多個導電端子逸散出封裝結構,進而降低第二封裝件的晶片因為過熱而導致效能衰減的問題。In summary, in the package structure of the present invention, since the sealing body has at least one groove, it can effectively reduce the heat generated by the chip of the first package through the lateral transfer to the conductive connector and then to the second package. Most of the heat of the chip of the second package can escape from the package structure through the conductive terminals, thereby reducing the problem of performance degradation of the chip of the second package due to overheating.

雖然本發明已以實施例揭露如上,然其並非用以限定本發明,任何所屬技術領域中具有通常知識者,在不脫離本發明的精神和範圍內,當可作些許的更動與潤飾,故本發明的保護範圍當視後附的申請專利範圍所界定者為準。Although the present invention has been disclosed in the above embodiments, it is not intended to limit the present invention. Anyone with ordinary knowledge in the technical field can make some changes and modifications without departing from the spirit and scope of the present invention. The scope of protection of the present invention shall be determined by the scope of the attached patent application.

100、200、300、400、500:封裝結構 110:線路板 120、220:第一封裝件 120a:第一封裝件的頂面 120b:第一封裝件的底面 130:第二封裝件 140:導電連接件 150、1501、1502:導電端子 122、132:線路結構 124、134:晶片 126、136、226、326、426、526:密封體 128:導電結構 122a、122b:表面 1261、2261、2262、2263、3261、4261、4262、4263、5261、5262、5263:凹槽 126a:密封體的頂面 151:第一端 152:第二端 Am、Af:面積 Ha、Hb、H1、H2、H3:深度 L1、L2、L3、L11、L21、L31:長度 G:絕緣間隙100, 200, 300, 400, 500: package structure 110: circuit board 120, 220: the first package 120a: The top surface of the first package 120b: bottom surface of the first package 130: second package 140: Conductive connector 150, 1501, 1502: conductive terminals 122, 132: Line structure 124, 134: Chip 126, 136, 226, 326, 426, 526: sealing body 128: conductive structure 122a, 122b: surface 1261, 2261, 2262, 2263, 3261, 4261, 4262, 4263, 5261, 5262, 5263: Groove 126a: The top surface of the sealing body 151: first end 152: second end Am, Af: area Ha, Hb, H1, H2, H3: depth L1, L2, L3, L11, L21, L31: length G: insulation gap

圖1A是依據本發明第一實施例的封裝結構的部分上視示意圖。 圖1B是圖1A之密封體對應環形輪廓處的立體示意圖。 圖1C是沿著圖1A之剖線A-A’的剖面示意圖。 圖1D是圖1C之散熱路徑剖面示意圖。 圖2A是依據本發明第二實施例的封裝結構的部分上視示意圖。 圖2B是沿著圖2A之剖線B-B’的剖面示意圖。 圖2C是圖2B之散熱路徑剖面示意圖。 圖3是依據本發明第三實施例的封裝結構的部分上視示意圖。 圖4是依據本發明第四實施例的封裝結構的部分上視示意圖。 圖5是依據本發明第五實施例的封裝結構的部分上視示意圖。 應說明的是,圖1A、圖2A、圖3、圖4、圖5為了清楚表示凹槽的位置,因此省略繪示上方的第二封裝件。FIG. 1A is a schematic partial top view of the package structure according to the first embodiment of the present invention. Fig. 1B is a three-dimensional schematic diagram of the sealing body in Fig. 1A corresponding to the annular contour. Fig. 1C is a schematic cross-sectional view taken along the section line A-A' of Fig. 1A. FIG. 1D is a schematic cross-sectional view of the heat dissipation path of FIG. 1C. 2A is a schematic partial top view of a package structure according to a second embodiment of the invention. Fig. 2B is a schematic cross-sectional view taken along the line B-B' of Fig. 2A. 2C is a schematic cross-sectional view of the heat dissipation path of FIG. 2B. FIG. 3 is a schematic partial top view of a package structure according to a third embodiment of the present invention. 4 is a schematic partial top view of a package structure according to a fourth embodiment of the invention. 5 is a schematic partial top view of a packaging structure according to a fifth embodiment of the invention. It should be noted that FIG. 1A, FIG. 2A, FIG. 3, FIG. 4, and FIG. 5 illustrate the position of the groove clearly, so the upper second package is omitted.

100:封裝結構 100: Package structure

110:線路板 110: circuit board

120:第一封裝件 120: The first package

120a:第一封裝件的頂面 120a: The top surface of the first package

120b:第一封裝件的底面 120b: bottom surface of the first package

122a、122b:表面 122a, 122b: surface

122、132:線路結構 122, 132: Line structure

124、134:晶片 124, 134: Chip

126、136:密封體 126, 136: Seal body

1261:凹槽 1261: Groove

126a:密封體的頂面 126a: The top surface of the sealing body

128:導電結構 128: conductive structure

130:第二封裝件 130: second package

140:導電連接件 140: Conductive connector

150、1501、1502:導電端子 150, 1501, 1502: conductive terminals

Ha、Hb:深度 Ha, Hb: depth

151:第一端 151: first end

152:第二端 152: second end

G:絕緣間隙 G: insulation gap

Claims (10)

一種封裝結構,包括: 線路板; 第一封裝件,配置於所述線路板上,且所述第一封裝件包括: 線路結構; 晶片,配置於所述線路結構上; 密封體,密封所述晶片且具有至少一凹槽; 多個導電結構,貫穿所述密封體; 第二封裝件,配置於所述第一封裝件上; 多個導電連接件,位於所述第一封裝件與所述第二封裝件之間;以及 多個導電端子,配置於所述線路板與所述第一封裝件之間,其中所述晶片與所述多個導電連接件之間的熱阻大於所述晶片與所述多個導電端子之間的熱阻。A packaging structure, including: circuit board; The first package is configured on the circuit board, and the first package includes: Line structure The chip is arranged on the circuit structure; A sealing body that seals the wafer and has at least one groove; A plurality of conductive structures penetrating the sealing body; The second package is configured on the first package; A plurality of conductive connectors located between the first package and the second package; and A plurality of conductive terminals are arranged between the circuit board and the first package, wherein the thermal resistance between the chip and the plurality of conductive connectors is greater than that between the chip and the plurality of conductive terminals Thermal resistance between. 如申請專利範圍第1項所述的封裝結構,其中: 各個所述多個導電端子具有彼此相對的第一端及第二端,所述第一端較所述第二端接近所述晶片; 所述至少一凹槽的配置位置構成至少一環形輪廓;且 所述密封體對應於所述至少一環形輪廓處的總截面積小於所述多個第一端的總表面積。The package structure as described in item 1 of the scope of patent application, in which: Each of the plurality of conductive terminals has a first end and a second end opposite to each other, and the first end is closer to the chip than the second end; The arrangement position of the at least one groove constitutes at least one annular profile; and The total cross-sectional area of the sealing body corresponding to the at least one annular profile is smaller than the total surface area of the first ends. 如申請專利範圍第1項所述的封裝結構,其中所述第一封裝件具有彼此相對的頂面及底面,所述頂面較所述底面接近所述第一封裝件,且所述晶片與所述頂面之間的熱阻大於所述晶片與所述底面之間的熱阻。The package structure according to claim 1, wherein the first package has a top surface and a bottom surface opposite to each other, the top surface is closer to the first package than the bottom surface, and the chip and The thermal resistance between the top surface is greater than the thermal resistance between the wafer and the bottom surface. 如申請專利範圍第1項所述的封裝結構,其中: 所述至少一凹槽的配置位置構成至少一環形輪廓; 所述多個導電端子於所述線路結構上的投影位於所述至少一環形輪廓於所述線路結構上的投影範圍內。The package structure as described in item 1 of the scope of patent application, in which: The arrangement position of the at least one groove constitutes at least one annular profile; The projections of the plurality of conductive terminals on the circuit structure are located within the projection range of the at least one annular contour on the circuit structure. 如申請專利範圍第1項所述的封裝結構,其中: 於所述第一封裝件與所述第二封裝件之間具有絕緣間隙;且 位於所述絕緣間隙內的絕緣材質的熱導率小於所述多個導電連接件的熱導率及所述多個導電端子的熱導率。The package structure as described in item 1 of the scope of patent application, in which: There is an insulation gap between the first package and the second package; and The thermal conductivity of the insulating material located in the insulating gap is lower than the thermal conductivity of the plurality of conductive connectors and the thermal conductivity of the plurality of conductive terminals. 如申請專利範圍第1項所述的封裝結構,其中所述至少一凹槽包括至少一環形凹槽。According to the packaging structure described in claim 1, wherein the at least one groove includes at least one annular groove. 如申請專利範圍第6項所述的封裝結構,其中所述至少一環形凹槽包括: 第一環形凹槽,圍繞所述晶片; 第二環形凹槽,圍繞所述第一環形凹槽,其中所述第二環形凹槽的深度大於所述第一環形凹槽的深度。The packaging structure according to item 6 of the scope of patent application, wherein the at least one annular groove includes: A first annular groove surrounding the wafer; A second annular groove surrounds the first annular groove, wherein the depth of the second annular groove is greater than the depth of the first annular groove. 如申請專利範圍第1項所述的封裝結構,其中所述至少一凹槽包括多個條形凹槽,且所述多個條形凹槽的配置位置構成至少一環形輪廓。According to the package structure described in claim 1, wherein the at least one groove includes a plurality of strip-shaped grooves, and the arrangement position of the plurality of strip-shaped grooves constitutes at least one annular profile. 如申請專利範圍第8項所述的封裝結構,其中所述多個條形凹槽包括: 多個第一條形凹槽,所述多個第一條形凹槽的配置位置構成第一環形輪廓;以及 多個第二條形凹槽,所述多個第一條形凹槽的配置位置構成第二環形輪廓,其中: 所述第一環形輪廓圍繞所述晶片; 所述第二環形輪廓圍繞所述第一環形輪廓;且 所述多個第二條形凹槽的深度大於所述多個第一條形凹槽的深度。The packaging structure according to item 8 of the scope of patent application, wherein the plurality of strip grooves include: A plurality of first strip-shaped grooves, the arrangement positions of the plurality of first strip-shaped grooves constitute a first annular profile; and A plurality of second strip-shaped grooves, the arrangement positions of the plurality of first strip-shaped grooves constitute a second annular profile, wherein: The first annular contour surrounds the wafer; The second annular contour surrounds the first annular contour; and The depth of the plurality of second strip grooves is greater than the depth of the plurality of first strip grooves. 如申請專利範圍第8項所述的封裝結構,其中所述多個條形凹槽包括: 多個第一條形凹槽,所述多個第一條形凹槽的配置位置構成第一環形輪廓;以及 多個第二條形凹槽,所述多個第一條形凹槽的配置位置構成第二環形輪廓,且所述多個第二條形凹槽的總長度小於所述多個第一條形凹槽的總長度。The packaging structure according to item 8 of the scope of patent application, wherein the plurality of strip grooves include: A plurality of first strip-shaped grooves, the arrangement positions of the plurality of first strip-shaped grooves constitute a first annular profile; and A plurality of second strip-shaped grooves, the arrangement positions of the plurality of first strip-shaped grooves constitute a second annular profile, and the total length of the plurality of second strip-shaped grooves is less than the plurality of first strips The total length of the shaped groove.
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