TW202046022A - Shutter device, exposure device, film forming device and method of manufacturing goods enhancing strength while reducing weight of shutter blade - Google Patents
Shutter device, exposure device, film forming device and method of manufacturing goods enhancing strength while reducing weight of shutter blade Download PDFInfo
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- TW202046022A TW202046022A TW109113605A TW109113605A TW202046022A TW 202046022 A TW202046022 A TW 202046022A TW 109113605 A TW109113605 A TW 109113605A TW 109113605 A TW109113605 A TW 109113605A TW 202046022 A TW202046022 A TW 202046022A
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
- G03F7/7055—Exposure light control in all parts of the microlithographic apparatus, e.g. pulse length control or light interruption
- G03F7/70558—Dose control, i.e. achievement of a desired dose
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/0002—Lithographic processes using patterning methods other than those involving the exposure to radiation, e.g. by stamping
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/20—Exposure; Apparatus therefor
- G03F7/2002—Exposure; Apparatus therefor with visible light or UV light, through an original having an opaque pattern on a transparent support, e.g. film printing, projection printing; by reflection of visible or UV light from an original such as a printed image
- G03F7/2012—Exposure; Apparatus therefor with visible light or UV light, through an original having an opaque pattern on a transparent support, e.g. film printing, projection printing; by reflection of visible or UV light from an original such as a printed image using liquid photohardening compositions, e.g. for the production of reliefs such as flexographic plates or stamps
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
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- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Power Engineering (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
- Shaping Of Tube Ends By Bending Or Straightening (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
- Shutters For Cameras (AREA)
- Preparing Plates And Mask In Photomechanical Process (AREA)
Abstract
Description
本發明涉及遮蔽器裝置、曝光裝置、膜形成裝置及物品製造方法。The present invention relates to a shutter device, an exposure device, a film forming device, and an article manufacturing method.
在經由原版將基板進行曝光的曝光裝置、及將基板之上的組成物與模具予以接觸並將該組成物透過光的照射予以硬化的膜形成裝置等的製造裝置方面,可為了將光路徑進行開閉而使用遮蔽器裝置。於專利文獻1,已記載將遮蔽器葉片透過鋁等的高傳熱材而形成,在光的入射側蒸鍍鋁,在其相反側以黑色的塗料進行塗抹。
[先前技術文獻]
[專利文獻]In manufacturing equipment such as an exposure device that exposes a substrate via an original plate, and a film forming device that contacts a composition on the substrate with a mold and cures the composition through light irradiation, it is possible to perform light path The shutter device is used for opening and closing. In
[專利文獻1] 日本特開2004-240097號公報[Patent Document 1] JP 2004-240097 A
[發明所欲解決之問題][The problem to be solved by the invention]
於曝光裝置及膜形成裝置等的製造裝置方面,為了使處理量提升需要使遮蔽器葉片的速度提升。為此,需要一面縮小遮蔽器葉片的重量一面提高強度。With regard to manufacturing equipment such as exposure equipment and film forming equipment, it is necessary to increase the speed of the shutter blades in order to increase the throughput. For this reason, it is necessary to increase the strength while reducing the weight of the shutter blade.
本發明目的在於提供在為了一面縮小遮蔽器葉片的重量一面提高強度方面有利的技術。 [解決問題之技術手段]The object of the present invention is to provide a technique that is advantageous in terms of improving the strength while reducing the weight of the shutter blade. [Technical means to solve the problem]
本發明的1個方案涉及一種遮蔽器裝置,其為將曝光光的光路徑透過遮蔽器葉片進行開閉者,前述遮蔽器葉片包含具有曝光光入射的第1面和與前述第1面相反之側的第2面的基底構材、和結合於前述第2面的輔助構材,前述輔助構材的熱膨脹率與前述基底構材的熱膨脹率不同,因前述曝光光而產生的熱使前述遮蔽器葉片彎曲。 [對照先前技術之功效]One aspect of the present invention relates to a shutter device that opens and closes a light path of exposure light through a shutter blade, the shutter blade including a first surface on which exposure light enters and a side opposite to the first surface The second surface of the base member and the auxiliary member bonded to the second surface, the coefficient of thermal expansion of the auxiliary member is different from the coefficient of thermal expansion of the base member, and the heat generated by the exposure light causes the shade The blade is bent. [Compared with the effects of previous technologies]
依本發明時,提供在為了一面縮小遮蔽器葉片的重量一面提高強度方面有利的技術。According to the present invention, an advantageous technology is provided in order to reduce the weight of the shader blade and increase the strength.
以下,參照圖式詳細說明實施方式。另外,以下的實施方式非限定申請專利範圍的發明者。於實施方式雖記載複數個特徵,惟不限於此等複數個特徵的全部為發明必須者,此外複數個特徵亦可任意進行組合。再者,圖式中,對相同或同樣的構成標注相同的參考符號,重複之說明省略。Hereinafter, embodiments will be described in detail with reference to the drawings. In addition, the following embodiments are not inventors who limit the scope of patent applications. Although a plurality of features are described in the embodiment, it is not limited to that all of the plurality of features are required for the invention, and a plurality of features can be combined arbitrarily. In addition, in the drawings, the same or the same components are denoted by the same reference symbols, and repeated descriptions are omitted.
於圖1,示出第1實施方式的遮蔽器裝置1的構成例。遮蔽器裝置1可被構成為具備遮蔽器葉片2,將曝光光4的光路徑透過遮蔽器葉片2進行開閉。遮蔽器裝置1可具備驅動遮蔽器葉片2的驅動機構,例如可具備將遮蔽器葉片2繞旋轉軸RA予以旋轉的旋轉機構3。旋轉軸RA例如可為與曝光光4的光軸(主光線)平行。另外,遮蔽器葉片2的驅動方向可為直線方向。在以下,可透過使與曝光光4的光軸平行的方向為Z方向的XYZ座標系而說明方向。FIG. 1 shows a configuration example of the
於圖2,示出第1實施方式的遮蔽器裝置1的遮蔽器葉片2的構成例。在示於圖2之例,相對於輪轂HB設置2個遮蔽器葉片2。遮蔽器葉片2的個數可任意定之。遮蔽器葉片2可包含具有曝光光4入射的第1面S1和與第1面S1相反之側的第2面S2的基底構材21、和結合於第2面S2的輔助構材22。基底構材21例如雖可由鋁或鋁合金等的金屬而構成,惟亦可由其他材料而構成。輔助構材22例如可透過黏合劑23而固定於基底構材21。黏合劑23的熱導率比基底構材21的熱導率高為優選。於他例,輔助構材22例如可透過螺絲等的緊固件而固定於基底構材21,可透過焊接而固定於基底構材21,亦可透過其他方法而固定於基底構材21。In FIG. 2, a configuration example of the
輔助構材22可包含沿著基底構材21的第2面S2而變寬的板狀部分。輔助構材22的熱膨脹率與基底構材21的熱膨脹率不同,因曝光光4而產生的熱可使遮蔽器葉片2彎曲。透過此彎曲,使得遮蔽器葉片2的剛性,例如Z方向上的剛性可提升。此有利於遮蔽器葉片2的高速驅動。The
輔助構材22的熱導率比基底構材21的熱導率高為優選。此在為了抑制曝光光4的照射所致的遮蔽器葉片2的溫度上升方面有利。輔助構材22的密度比基底構材21的密度小為優選。此在為了將遮蔽器葉片2輕量化並將遮蔽器葉片2高速驅動方面有利。輔助構材22的反射率比基底構材21的反射率小為優選。此在為了防止可能因多重反射而入射於輔助構材22的曝光光4的反射從而防止曝光光從遮蔽器裝置1漏至曝光對象物之側方面有利。It is preferable that the thermal conductivity of the
輔助構材22例如能以石墨而構成。或者,輔助構材22以碳纖維而構成,該碳纖維的方向是沿著繞旋轉軸RA的圓周方向C為優選。可成為因曝光光4而產生的熱致使遮蔽器葉片2彎曲的狀態。此可因輔助構材22的熱膨脹率與基底構材21的熱膨脹率的差而造成。於如此的狀態下,沿著繞旋轉軸RA的圓周方向的剖面下的遮蔽器葉片2的彎曲量(平行於旋轉軸RA的方向上的位移量)比沿著以旋轉軸RA為中心的半徑方向的剖面下的遮蔽器葉片2的彎曲量大為優選。此可有助於被透過旋轉機構3而旋轉驅動的遮蔽器葉片2的剛性的提升。The
於圖3,示出第2實施方式的遮蔽器裝置1的構成例。第2實施方式中未言及的事項可遵照第1實施方式。輔助構材22可包含1或複數個長條部ST。1或複數個長條部ST是圓周方向C上的尺寸比半徑方向R上的尺寸大。長條ST例如可具有圓弧狀。因曝光光4而產生的熱致使遮蔽器葉片2可成為彎曲的形狀。於如此的狀態下,1或複數個長條部ST可作用為沿著繞旋轉軸RA的圓周方向的剖面下的遮蔽器葉片2的彎曲量比沿著以旋轉軸RA為中心的半徑方向的剖面下的遮蔽器葉片2的彎曲量大。在圖3之例,旋轉軸RA與遮蔽器葉片2的最外周端之間的長條部ST的個數雖為3個,惟此數可任意決定為如2、3、4、5…等。FIG. 3 shows a configuration example of the
於圖8,示出第2實施方式的遮蔽器裝置1的遮蔽器葉片2的解析例。在此例,以鋁合金而構成基底構材21,以石墨而構成輔助構材22。遮蔽器葉片2設計為在23℃時不發生彎曲。於圖8,示出遮蔽器葉片2的溫度從23℃上升至80℃時的遮蔽器葉片2的變形。於圖8,橫軸為圓周方向R的位置,縱軸為曝光光4的光軸方向(Z方向)上的位置。R=0mm表示從旋轉軸RA的距離為r+0mm的周上的變形量,R=3mm表示從旋轉軸RA的距離為r+30mm的圓的周上的變形量,R=60mm表示從旋轉軸RA的距離為r+60 mm的圓的周上的變形量。r為支撐遮蔽器葉片2的輪轂HB的半徑。換言之,R=0mm為沿著從旋轉軸RA的距離為r+0mm的圓的圓周方向的剖面下的遮蔽器葉片2的彎曲量(往Z方向的位移量)。此外,R=30mm為沿著從旋轉軸RA的距離為r+30mm的圓的圓周方向的剖面下的遮蔽器葉片2的彎曲量(往Z方向的位移量)。此外,R=60mm為沿著從旋轉軸RA的距離為r+60mm的圓的圓周方向的剖面下的遮蔽器葉片2的彎曲量(往Z方向的位移量)。圖8中的「彎曲量」示出沿著繞旋轉軸RA的圓周方向的剖面下的遮蔽器葉片2的彎曲量的最大值。透過如此的彎曲,使得遮蔽器葉片2的剖面2次軸矩增加,剛性提升。在解析例,相對於因曝光光4而產生的熱致使的變形前(23℃)的遮蔽器葉片2的固有振動頻率,因曝光光4而產生的熱致使的變形後(80℃)的遮蔽器葉片2的固有振動頻率成為1.26倍。亦即,熱致使的彎曲使得遮蔽器葉片2的剛性提升。FIG. 8 shows an analysis example of the
於圖4,示出第3實施方式的遮蔽器裝置1的遮蔽器葉片2的構成例。第3實施方式中未言及的事項可遵照第1或第2實施方式。輔助構材22包含沿著基底構材21的第2面S2而變寬的板狀部分PT,板狀部分PT可具有1或複數個溝T。於一例中,1或複數個溝T是圓周方向C上的尺寸比半徑方向R上的尺寸大。可成為因曝光光4而產生的熱致使遮蔽器葉片2彎曲的狀態。於如此的狀態下,1或複數個溝T可作用為沿著繞旋轉軸RA的圓周方向的剖面下的遮蔽器葉片2的彎曲量比沿著以旋轉軸RA為中心的半徑方向的剖面下的遮蔽器葉片2的彎曲量大。於第3實施方式,由1或複數個溝T而界定的板狀部分PT亦可理解為具有1或複數個長條部ST者。FIG. 4 shows a configuration example of the
於圖5,示出第4實施方式的遮蔽器裝置1的遮蔽器葉片2的構成例。第4實施方式為第3實施方式的變形例,第4實施方式中未言及的事項可遵照第3實施方式。輔助構材22包含沿著基底構材21的第2面S2而變寬的板狀部分PT,板狀部分PT可具有1或複數個溝T。於一例中,1或複數個溝T是圓周方向C上的尺寸比半徑方向R上的尺寸大。FIG. 5 shows a configuration example of the
於圖6,示出第5實施方式的遮蔽器裝置1的遮蔽器葉片2的構成例。第5實施方式中未言及的事項可遵照第1~第4實施方式。於第5實施方式,輔助構材22亦具有1或複數個長條部ST及/或1或複數個溝T。1或複數個長條部ST可為矩形狀。FIG. 6 shows a configuration example of the
於圖7,示出第6實施方式的遮蔽器裝置1的遮蔽器葉片2的構成例。第6實施方式中未言及的事項可遵照第1~第5實施方式。於第6實施方式,輔助構材22亦具有1或複數個長條部ST及/或1或複數個溝T。此外,在第6實施方式,輔助構材22可包含將複數個長條部ST連接的連接部CN。FIG. 7 shows a configuration example of the
於圖9,例示裝入有作為第1~第6實施方式而例示的遮蔽器裝置1的曝光裝置100。曝光裝置100對被塗佈感光材PR的基板S經由原版R照射曝光光從而將感光材PR進行曝光。曝光裝置100具備將原版R進行照明的照明光學系統110,遮蔽器裝置1被裝入於照明光學系統110。In FIG. 9, the
曝光裝置100可利用於半導體裝置等的物品的製造。一實施方式的物品製造方法可包含將感光材塗佈於基板S的塗佈程序、將歷經該塗佈程序的基板S透過曝光裝置100進行曝光的曝光程序、將歷經該曝光程序的基板S的感光材進行顯影的顯影程序、和將歷經該顯影程序的基板S進行處理的處理程序。該處理程序例如可為離子植入程序、蝕刻程序等。該物品製造方法可從歷經如此的程序的基板S製造物品。The
於圖10,例示裝入有作為第1~第6實施方式而例示的遮蔽器裝置1的膜形成裝置200。膜形成裝置200使模具M接觸於基板S之上的組成物IM並透過曝光光4的照射使組成物IM硬化從而在基板S之上形成由組成物IM的硬化物所成的膜。膜形成裝置200具備對組成物IM照射曝光光4的光學系統210,遮蔽器裝置1被裝入於光學系統210。膜形成裝置200例如可被構成為,在基板S之上形成由組成物IM的硬化物所成的圖案的壓印裝置、或在基板S之上形成由組成物IM的硬化物所成的平坦化膜的平坦化裝置。In FIG. 10, the
膜形成裝置200可利用於半導體裝置等的物品的製造。一實施方式的物品製造方法包含在基板S透過膜形成裝置200形成膜的膜形成程序、和將歷經該膜形成程序的基板S進行處理的處理程序,可從歷經如此的程序的基板S製造物品。The
以上,雖就本發明的優選實施方式進行說明,惟本發明不限定於此等實施方式,在其要旨的範圍內可進行各種的變化及變更。Although the preferred embodiments of the present invention have been described above, the present invention is not limited to these embodiments, and various changes and modifications can be made within the scope of the gist.
1:遮蔽器裝置 2:遮蔽器葉片 3:旋轉機構 4:曝光光 21:基底構材 22:輔助構材 ST:長條部 T:溝 PT:板狀構材1: shader device 2: shader blade 3: Rotating mechanism 4: Exposure light 21: base material 22: auxiliary members ST: Long section T: groove PT: Plate structure
[圖1]就第1實施方式的遮蔽器裝置的構成進行繪示的圖。 [圖2]就第1實施方式的遮蔽器裝置的遮蔽器葉片的構成進行繪示的圖。 [圖3]就第2實施方式的遮蔽器裝置的遮蔽器葉片的構成進行繪示的圖。 [圖4]就第3實施方式的遮蔽器裝置的遮蔽器葉片的構成進行繪示的圖。 [圖5]就第4實施方式的遮蔽器裝置的遮蔽器葉片的構成進行繪示的圖。 [圖6]就第5實施方式的遮蔽器裝置的遮蔽器葉片的構成進行繪示的圖。 [圖7]就第6實施方式的遮蔽器裝置的遮蔽器葉片的構成進行繪示的圖。 [圖8]就第2實施方式的遮蔽器裝置的遮蔽器葉片的解析例進行繪示的圖。 [圖9]就曝光裝置的構成進行例示的圖。 [圖10]就膜形成裝置的構成進行例示的圖。[Fig. 1] A diagram showing the configuration of the shutter device of the first embodiment. [Fig. 2] A diagram showing the structure of the shutter blade of the shutter device of the first embodiment. [Fig. 3] A diagram showing the structure of the shutter blade of the shutter device of the second embodiment. [Fig. 4] A diagram showing the structure of the shutter blade of the shutter device of the third embodiment. [Fig. 5] A diagram showing the structure of the shutter blade of the shutter device of the fourth embodiment. [Fig. 6] A diagram showing the structure of the shutter blade of the shutter device of the fifth embodiment. [Fig. 7] A diagram showing the structure of the shutter blade of the shutter device of the sixth embodiment. [Fig. 8] A diagram showing an analysis example of the shutter blade of the shutter device of the second embodiment. [Fig. 9] A diagram exemplifying the configuration of the exposure device. [Fig. 10] A diagram illustrating the structure of a film forming apparatus.
2:遮蔽器葉片 2: shader blade
21:基底構材 21: base material
22:輔助構材 22: auxiliary members
23:黏合劑 23: Adhesive
C:圓周方向 C: circumferential direction
HB:輪轂 HB: Wheel hub
RA:繞旋轉軸 RA: Around the axis of rotation
S1:第1面
S1:
S2:第2面
S2:
Claims (29)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
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JP2019090079A JP7299748B2 (en) | 2019-05-10 | 2019-05-10 | SHUTTER DEVICE, EXPOSURE DEVICE, FILM FORMING DEVICE, AND PRODUCT MANUFACTURING METHOD |
JP2019-090079 | 2019-05-10 |
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TW202046022A true TW202046022A (en) | 2020-12-16 |
TWI803746B TWI803746B (en) | 2023-06-01 |
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TW109113605A TWI803746B (en) | 2019-05-10 | 2020-04-23 | Mask device, exposure device, film forming device, and article manufacturing method |
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JP (1) | JP7299748B2 (en) |
KR (1) | KR20200130130A (en) |
TW (1) | TWI803746B (en) |
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Publication number | Priority date | Publication date | Assignee | Title |
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JPH09186076A (en) * | 1996-01-05 | 1997-07-15 | Canon Inc | Aligner |
JP3575281B2 (en) * | 1998-05-27 | 2004-10-13 | ウシオ電機株式会社 | Shutter mechanism of light irradiation device |
JP2002359173A (en) | 2001-05-31 | 2002-12-13 | Canon Inc | Light source apparatus, aligner and method for manufacturing device |
JP4346320B2 (en) | 2003-02-05 | 2009-10-21 | 大日本印刷株式会社 | Exposure method and exposure apparatus |
JP2006216727A (en) | 2005-02-03 | 2006-08-17 | Taiheiyo Cement Corp | Shutter for light path |
JP2008141016A (en) | 2006-12-01 | 2008-06-19 | Canon Inc | Shutter blade device, shutter unit, imaging apparatus, aligner, and device manufacturing method |
JP6276902B1 (en) * | 2016-05-16 | 2018-02-07 | キヤノン電子株式会社 | FIBER-REINFORCED LAMINATE, SHUTTER DEVICE AND OPTICAL DEVICE |
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2019
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TWI803746B (en) | 2023-06-01 |
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