TW202043296A - Method for manufacturing electroconductive pattern - Google Patents

Method for manufacturing electroconductive pattern Download PDF

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TW202043296A
TW202043296A TW109109931A TW109109931A TW202043296A TW 202043296 A TW202043296 A TW 202043296A TW 109109931 A TW109109931 A TW 109109931A TW 109109931 A TW109109931 A TW 109109931A TW 202043296 A TW202043296 A TW 202043296A
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acid
pattern
aqueous solution
conductive
acidic aqueous
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TWI833933B (en
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兒玉年矢
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日商東麗股份有限公司
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    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05KPRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00Apparatus or processes for manufacturing printed circuits
    • H05K3/10Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern
    • H05K3/12Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern using thick film techniques, e.g. printing techniques to apply the conductive material or similar techniques for applying conductive paste or ink patterns
    • GPHYSICS
    • G06COMPUTING; CALCULATING OR COUNTING
    • G06FELECTRIC DIGITAL DATA PROCESSING
    • G06F3/00Input arrangements for transferring data to be processed into a form capable of being handled by the computer; Output arrangements for transferring data from processing unit to output unit, e.g. interface arrangements
    • G06F3/01Input arrangements or combined input and output arrangements for interaction between user and computer
    • G06F3/03Arrangements for converting the position or the displacement of a member into a coded form
    • G06F3/041Digitisers, e.g. for touch screens or touch pads, characterised by the transducing means
    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05KPRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K1/00Printed circuits
    • H05K1/02Details
    • H05K1/09Use of materials for the conductive, e.g. metallic pattern
    • H05K1/092Dispersed materials, e.g. conductive pastes or inks

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  • General Engineering & Computer Science (AREA)
  • Theoretical Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Human Computer Interaction (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Dispersion Chemistry (AREA)
  • Chemical & Material Sciences (AREA)
  • Conductive Materials (AREA)
  • Manufacturing Of Printed Wiring (AREA)
  • Materials For Photolithography (AREA)

Abstract

The present invention provides a method for manufacturing an electroconductive pattern having an excellent electric conductivity in a low temperature of 100 DEG C or below. Provided is a method for manufacturing an electroconductive pattern having: (1) a step for forming a pattern including electroconductive particles (a) and a resin (b) on a substrate; and (2) a step for bringing an acidic aqueous solution into contact with the formed pattern, the acidic aqueous solution containing at least one type of salt in which the acid dissociation constant (pKa) of a conjugate acid of anions at 25 DEG C is 1.0 or below, and having a pH at 25 DEG C of 1.2 to 3.5.

Description

導電圖案之製造方法Manufacturing method of conductive pattern

本發明係關於導電圖案之製造方法。The present invention relates to a manufacturing method of conductive patterns.

近年來,作為輸入手段的觸控面板被廣泛使用。觸控面板係由液晶面板、有機EL(Electroluminescence)面板等之顯示部分、及檢測在特定之位置的輸入資訊之觸控感測器等所構成。觸控面板的方式係根據輸入位置的檢測方法,可大致分為電阻膜方式、靜電容方式、光學方式、電磁感應方式、超音波方式等。其中,靜電容方式的觸控面板由於光學亮度高、設計性優良、結構簡易及功能優異等的理由而被廣泛使用。In recent years, touch panels as input means have been widely used. The touch panel is composed of a display part such as a liquid crystal panel, an organic EL (Electroluminescence) panel, and a touch sensor that detects input information at a specific location. The touch panel method is based on the detection method of the input position, and can be roughly classified into a resistive film method, an electrostatic capacitance method, an optical method, an electromagnetic induction method, an ultrasonic method, etc. Among them, capacitive touch panels are widely used for reasons such as high optical brightness, excellent design, simple structure, and excellent functions.

靜電容方式的觸控感測器,具有第一電極及隔著絕緣層而與之垂直的第二電極,對觸控面板面的電極施加電壓,將藉由檢測手指等的導電體觸碰時之靜電容變化所得到的接觸位置作為訊號輸出。就靜電容方式的觸控感測器所使用的配線電極而言,從不易看見配線電極的觀點來看,一般係使用氧化銦錫等之透明配線電極,但近年來,由於高感度化、畫面的大型化,使用金屬材料的不透明配線電極逐漸普及。此外,為了觸控感測器的高精細化、薄膜化、提升視認性,而要求於液晶面板、有機EL面板等之顯示部分,直接形成不透明配線電極。因此,除了形成圖案外,亦需要於低溫形成導電圖案。於是,有提案一種的導電糊,其含有導電性填料、兩性離子化合物及熱硬化性化合物(參照例如:專利文獻1),作為形成在低溫的固化條件下可表現導電性的導電圖案的技術。又,作為減低導電圖案層的電阻之技術,有提案一種方法,其係對導電圖案層,進行與室溫之強酸水溶液接觸之強酸處理步驟、及與比室溫更高溫之弱酸水溶液接觸之弱酸處理步驟,使導電圖案層中的金屬粒子之至少一部分形成融合相連而降低導電圖案層的表面電阻率的方法(參照例如:專利文獻2)。 [先前技術文獻] [專利文獻]The touch sensor of the electrostatic capacitance type has a first electrode and a second electrode perpendicular to it via an insulating layer. A voltage is applied to the electrode on the touch panel surface to detect when touched by a conductive body such as a finger The contact position obtained by the change of the electrostatic capacitance is output as a signal. Regarding the wiring electrodes used in capacitive touch sensors, from the viewpoint that the wiring electrodes are not easily visible, transparent wiring electrodes such as indium tin oxide are generally used. However, in recent years, due to high sensitivity and screen With the increase in size, opaque wiring electrodes using metal materials have gradually become popular. In addition, in order to achieve high-definition, thin-film, and improved visibility of touch sensors, it is required to directly form opaque wiring electrodes in display parts of liquid crystal panels, organic EL panels, and the like. Therefore, in addition to patterning, it is also necessary to form conductive patterns at low temperatures. Therefore, a conductive paste containing a conductive filler, a zwitterionic compound, and a thermosetting compound (see, for example, Patent Document 1) has been proposed as a technique for forming a conductive pattern that can exhibit conductivity under low-temperature curing conditions. In addition, as a technique for reducing the resistance of the conductive pattern layer, a method has been proposed, which involves performing a strong acid treatment step of contacting the conductive pattern layer with a strong acid aqueous solution at room temperature and a weak acid contacting with a weak acid aqueous solution at a higher temperature than room temperature. In the processing step, at least a part of the metal particles in the conductive pattern layer is formed to be fused and connected to reduce the surface resistivity of the conductive pattern layer (see, for example, Patent Document 2). [Prior Technical Literature] [Patent Literature]

專利文獻1 國際公開第2014/208445號 專利文獻2 特開2012-15143號公報Patent Document 1'' International Publication No. 2014/208445 Patent Document 2   JP 2012-15143 Publication

[發明所欲解決之課題][The problem to be solved by the invention]

藉由專利文獻1~2的技術,雖可在比以往更低溫下表現出導電性,但近年來,有要求在更低溫下的導電性,而在100℃以下的低溫條件下仍有導電性不夠充足的課題。Although the technology of Patent Documents 1 and 2 can exhibit conductivity at a lower temperature than before, in recent years, there is a demand for conductivity at a lower temperature, and conductivity at a low temperature below 100°C Insufficient topics.

本發明鑑於前述課題,而以提供一種即使在100℃以下的低溫仍可製造導電性優異之導電圖案的方法作為目的。 [用以解決課題之手段]In view of the foregoing problems, the present invention aims to provide a method for producing a conductive pattern with excellent conductivity even at a low temperature of 100°C or less. [Means to solve the problem]

本發明係一種導電圖案之製造方法,其具有: (1)於基材上形成圖案之步驟,該圖案包含導電性粒子(a)、樹脂(b);及 (2)使所形成的圖案與在25℃的pH為1.2~3.5的酸性水溶液接觸之步驟,該酸性水溶液包含至少一種在25℃的陰離子之共軛酸的酸解離常數(pKa)為1.0以下的鹽。 [發明的效果]The present invention is a method for manufacturing a conductive pattern, which has: (1) A step of forming a pattern on a substrate, the pattern including conductive particles (a) and resin (b); and (2) The step of contacting the formed pattern with an acidic aqueous solution with a pH of 1.2 to 3.5 at 25°C, the acidic aqueous solution containing at least one anion at 25°C, and the acid dissociation constant (pKa) of the conjugate acid is 1.0 or less Of salt. [Effects of the invention]

根據本發明,即使在100℃以下的低溫,亦可形成導電性優異的導電圖案。According to the present invention, even at a low temperature of 100°C or less, a conductive pattern with excellent conductivity can be formed.

[用以實施發明之態樣][Pattern for implementing the invention]

本發明之導電圖案之製造方法係具有: (1)於基材上形成圖案之步驟,該圖案包含導電性粒子(a)、樹脂(b)(以下有記載成步驟(1)的情形);及 (2)使所形成的圖案與在25℃的pH為1.2至3.5的酸性水溶液接觸之步驟,該酸性水溶液包含至少一種在25℃的陰離子之共軛酸的酸解離常數(pKa)為1.0以下的鹽(以下有記載成步驟(2)的情形)。藉由本發明之製造方法所得到的導電圖案係樹脂(b)的有機成分與導電性粒子(a)的無機成分之複合物,導電性粒子(a)彼此因原子擴散現象而相互接觸,藉此而顯現導電性。樹脂(b)係作為黏結劑,其具有使圖案與基材之密著性提升之作用。藉由使圖案與在25℃的pH為1.2~3.5的酸性水溶液接觸,而促進原子從導電性粒子表面擴散,即使在100℃以下的低溫,亦可提升導電性,該酸性水溶液包含至少1種在25℃的陰離子之共軛酸的酸解離常數(pKa)為1.0以下的鹽。The manufacturing method of the conductive pattern of the present invention has: (1) A step of forming a pattern on a substrate, the pattern including conductive particles (a) and resin (b) (there is a case described as step (1) below); and (2) The step of contacting the formed pattern with an acidic aqueous solution with a pH of 1.2 to 3.5 at 25°C. The acidic aqueous solution contains at least one anion at 25°C and the acid dissociation constant (pKa) of the conjugate acid is 1.0 or less的盐 (The case described as step (2) below). In the composite of the organic component of the conductive pattern-based resin (b) and the inorganic component of the conductive particles (a) obtained by the production method of the present invention, the conductive particles (a) are in contact with each other due to the atom diffusion phenomenon, thereby And show conductivity. The resin (b) is used as a bonding agent, which has the effect of improving the adhesion between the pattern and the substrate. By contacting the pattern with an acidic aqueous solution with a pH of 1.2 to 3.5 at 25°C, the diffusion of atoms from the surface of the conductive particles is promoted, and the conductivity can be improved even at a low temperature below 100°C. The acidic aqueous solution contains at least one The acid dissociation constant (pKa) of the conjugate acid of the anion at 25°C is 1.0 or less.

首先,針對步驟(1)進行說明。First, the step (1) will be described.

作為基材可列舉例如:聚對酞酸乙二酯(以下 有記載為「PET」。)薄膜等的聚酯薄膜、聚醯亞胺薄膜、聚芳醯胺薄膜、環氧樹脂薄膜、聚醚醯亞胺薄膜、聚醚酮薄膜、聚碸系薄膜、玻璃基板、矽晶圓、氧化鋁基板、氮化鋁基板、碳化矽素基板、加飾層形成基板、絕緣層形成基板等。Examples of substrates include polyester films such as polyethylene terephthalate (hereinafter referred to as "PET") films, polyimide films, polyaramide films, epoxy resin films, and polyethers. Imide film, polyetherketone film, polyether-based film, glass substrate, silicon wafer, alumina substrate, aluminum nitride substrate, silicon carbide substrate, decorative layer forming substrate, insulating layer forming substrate, etc.

步驟(1)中所形成之圖案含有導電性粒子(a)。作為導電性粒子(a)可列舉例如:銀、金、銅、白金、鉛、錫、鎳、鋁、鎢、鉬、鉻、鈦、銦、此等之金屬合金等的粒子。亦可含有2種以上之上述者。此等當中,從導電性的觀點來看,較佳為選自銀、金及銅之金屬的粒子,從成本及安定性的觀點來看更佳為銀粒子。The pattern formed in step (1) contains conductive particles (a). Examples of the conductive particles (a) include particles of silver, gold, copper, platinum, lead, tin, nickel, aluminum, tungsten, molybdenum, chromium, titanium, indium, and these metal alloys. Two or more of the above may also be contained. Among them, from the viewpoint of conductivity, particles of metals selected from silver, gold, and copper are preferred, and silver particles are more preferred from the viewpoints of cost and stability.

導電性粒子(a)亦可具有二層以上的層結構。例如:亦可具有在由銅構成之核的表面具有由銀構成之殼的核殼結構。此外,導電性粒子(a)的表面亦可被有機成分、無機氧化物等被覆。有機成分係可作為小粒徑的導電性粒子的分散劑、導電助劑之功能。作為有機成分可列舉例如:脂肪酸、胺、硫醇、氰化物等。The conductive particle (a) may have a layer structure of two or more layers. For example, it may also have a core-shell structure with a shell made of silver on the surface of a core made of copper. In addition, the surface of the conductive particle (a) may be coated with an organic component, an inorganic oxide, or the like. The organic component can function as a dispersant and conductive auxiliary agent for conductive particles of small particle size. Examples of organic components include fatty acids, amines, mercaptans, and cyanides.

導電性粒子(a)的體積平均粒徑,從適度抑制粒子間的相互作用,使圖案中之導電性粒子(a)的分散性提升的觀點來看,較佳為0.1μm以上。另一方面,從使導電圖案之表面平滑度及尺寸精度提升,且形成微細導電圖案的觀點來看,導電性粒子(a)的體積平均粒徑較佳為2.0μm以下。於此,導電性粒子(a)的體積平均粒徑係使用THF(四氫呋喃)等之樹脂成分可溶解之溶媒而使所形成的圖案溶解,進行離心分離,使去除樹脂成分的固體成分沉澱而回收。接著,將回收的固體成分藉由掃描型電子顯微鏡(SEM)或透過型電子顯微鏡(TEM)觀察導電性粒子(a),隨機地選擇100個導電性粒子(a)之一次粒子而取得影像,針對各個一次粒子藉由影像解析求得圓換算直徑,並算出以體積加權之平均徑,藉此而可求得。The volume average particle diameter of the conductive particles (a) is preferably 0.1 μm or more from the viewpoint of appropriately suppressing the interaction between particles and improving the dispersibility of the conductive particles (a) in the pattern. On the other hand, from the viewpoint of improving the surface smoothness and dimensional accuracy of the conductive pattern and forming a fine conductive pattern, the volume average particle diameter of the conductive particles (a) is preferably 2.0 μm or less. Here, the volume average particle diameter of the conductive particles (a) is to use a solvent such as THF (tetrahydrofuran) that can dissolve the resin component to dissolve the formed pattern, perform centrifugal separation, and recover the solid component from which the resin component is removed. . Next, observe the conductive particles (a) with a scanning electron microscope (SEM) or a transmission electron microscope (TEM) from the recovered solid components, and randomly select 100 primary particles of the conductive particles (a) to obtain an image. For each primary particle, the circle-converted diameter is obtained by image analysis, and the volume-weighted average diameter is calculated, which can be obtained.

圖案中導電性粒子(a)的含量較佳為65~90質量%。導電性粒子(a)的含量為65質量%以上時,後述的步驟(2)中導電性粒子(a)彼此的接觸機率提高,而可進一步使導電性提升。另一方面,導電性粒子(a)的含量為90重量%以下時,藉由光蝕刻法,可形成微細的圖案。於此,導電圖案中的導電性粒子(a)之比例係可藉由下述方式算出:刮取所形成的圖案,藉由TG-DTA(示差熱天秤)透過在400~600℃使有機成分燃燒求得導電圖案中的無機固體成分之比例,使殘存的無機固體成分溶解於硝酸等中,藉由ICP發光分光分析(Inductivity coupled plasma optical emission spectrometer ; ICP-OES)測定無機固體成分中的導電性粒子(a)之比例。The content of the conductive particles (a) in the pattern is preferably 65 to 90% by mass. When the content of the conductive particles (a) is 65% by mass or more, the contact probability of the conductive particles (a) in the step (2) described later increases, and the conductivity can be further improved. On the other hand, when the content of the conductive particles (a) is 90% by weight or less, a fine pattern can be formed by the photolithography method. Here, the ratio of the conductive particles (a) in the conductive pattern can be calculated by scraping the formed pattern, and TG-DTA (differential thermal balance) is used to permeate the organic component at 400 to 600°C The ratio of the inorganic solid content in the conductive pattern is obtained by combustion, and the remaining inorganic solid content is dissolved in nitric acid, etc., and the conductivity of the inorganic solid content is measured by ICP-OES (Inductivity coupled plasma optical emission spectrometer; ICP-OES) The ratio of sexual particles (a).

步驟(1)中所形成之圖案含有樹脂(b)。作為樹脂可列舉例如:丙烯酸樹脂、聚酯樹脂、酚醛樹脂、環氧樹脂、丙烯酸胺基甲酸酯樹脂、聚醚胺基甲酸酯樹脂、苯氧基樹脂、聚碳酸酯樹脂、聚醯亞胺樹脂、聚醯胺樹脂、聚醯胺醯亞胺樹脂等。亦可含有2種以上之上述者。The pattern formed in step (1) contains resin (b). Examples of resins include acrylic resins, polyester resins, phenol resins, epoxy resins, acrylic urethane resins, polyether urethane resins, phenoxy resins, polycarbonate resins, and polyamide resins. Amine resin, polyamide resin, polyamide resin, etc. Two or more of the above may also be contained.

藉由光蝕刻法進行步驟(1)中之圖案形成的情形,前述樹脂(b)較佳為具有羧基,較佳為使用後述之感光性糊。When the pattern formation in step (1) is performed by a photoetching method, the resin (b) preferably has a carboxyl group, and it is preferable to use a photosensitive paste described later.

作為含有羧基之樹脂,可列舉例如:丙烯酸系共聚物、羧酸改性環氧樹脂、羧酸改性酚醛樹脂、聚醯胺酸、羧酸改性矽氧烷聚合物等。亦可含有2種以上之上述者。此等當中,較佳為紫外光透過率高的丙烯酸系共聚物或羧酸改性環氧樹脂。Examples of carboxyl group-containing resins include acrylic copolymers, carboxylic acid-modified epoxy resins, carboxylic acid-modified phenol resins, polyamide acids, and carboxylic acid-modified silicone polymers. Two or more of the above may also be contained. Among these, acrylic copolymers or carboxylic acid-modified epoxy resins with high ultraviolet light transmittance are preferred.

作為丙烯酸系共聚物,較佳為丙烯酸系單體與不飽和酸或其酸酐之共聚物,進一步亦可具有不飽和雙鍵的其他單體之共聚物。As the acrylic copolymer, a copolymer of an acrylic monomer and an unsaturated acid or an anhydride thereof is preferred, and a copolymer of other monomers having an unsaturated double bond may be further used.

作為丙烯酸系單體,可列舉例如:丙烯酸甲酯、丙烯酸乙酯(以下有記載為「EA」。)、丙烯酸-2-乙基己酯、丙烯酸正丁酯(以下有記載為「BA」。)、丙烯酸異丁酯、丙烯酸異丙酯、丙烯酸環氧丙酯、丁氧基三乙二醇丙烯酸酯、丙烯酸二環戊酯、丙烯酸二環戊烯酯、丙烯酸-2-羥乙酯、丙烯酸異莰酯、丙烯酸-2-羥丙酯、丙烯酸異癸酯、丙烯酸異辛酯、丙烯酸月桂酯、丙烯酸-2-甲氧基乙酯、甲氧基乙二醇丙烯酸酯、甲氧基二乙二醇丙烯酸酯、丙烯酸八氟戊酯、丙烯酸苯氧基乙酯、丙烯酸硬脂酯、丙烯酸三氟乙酯、丙烯酸胺基乙酯、丙烯酸苯酯、丙烯酸苯氧基乙酯、丙烯酸-1-萘酯、丙烯酸-2-萘酯、硫酚丙烯酸酯(thiophenol acrylate)、丙烯酸苄基硫醇酯、烯丙基化環己基二丙烯酸酯、甲氧基化環己基二丙烯酸酯、1,4-丁二醇二丙烯酸酯、1,3-丁二醇二丙烯酸酯、乙二醇二丙烯酸酯、二乙二醇二丙烯酸酯、三乙二醇二丙烯酸酯、聚乙二醇二丙烯酸酯、新戊二醇二丙烯酸酯、丙二醇二丙烯酸酯、聚丙二醇二丙烯酸酯、三甘油二丙烯酸酯、三羥甲基丙烷三丙烯酸酯、二(三羥甲基丙烷)四丙烯酸酯、二新戊四醇單羥基五丙烯酸酯、二新戊四醇六丙烯酸酯、丙烯醯胺、N-甲氧基甲基丙烯醯胺、N-乙氧基甲基丙烯醯胺、N-正丁氧基甲基丙烯醯胺、N-異丁氧基甲基丙烯醯胺、甲基丙烯醯酚(methacrylphenol)、甲基丙烯醯醯胺酚(methacrylamidephenol)、γ-丙烯醯氧基丙基三甲氧基矽烷、N-(2-羥基苯基)丙烯醯胺、N-(3-羥基苯基)丙烯醯胺、N-(4-羥基苯基)丙烯醯胺、丙烯酸鄰羥基苯酯、丙烯酸間羥基苯基酯、丙烯酸對羥基苯基酯、丙烯酸-2-(2-羥基苯基)乙酯、丙烯酸-2-(3-羥基苯基)乙酯、丙烯酸-2-(4-羥基苯基)乙酯等、將此等丙烯醯基取代成甲基丙烯醯基之化合物等。此等當中,特佳為選自丙烯酸乙酯、丙烯酸-2-羥乙酯及丙烯酸異莰酯之單體。亦可使用2種以上之上述者。Examples of acrylic monomers include methyl acrylate, ethyl acrylate (hereinafter referred to as "EA"), 2-ethylhexyl acrylate, and n-butyl acrylate (hereinafter referred to as "BA". ), isobutyl acrylate, isopropyl acrylate, glycidyl acrylate, butoxytriethylene glycol acrylate, dicyclopentyl acrylate, dicyclopentenyl acrylate, 2-hydroxyethyl acrylate, acrylic acid Isobornyl acrylate, 2-hydroxypropyl acrylate, isodecyl acrylate, isooctyl acrylate, lauryl acrylate, 2-methoxyethyl acrylate, methoxyglycol acrylate, methoxydiethyl Glycol acrylate, octafluoropentyl acrylate, phenoxyethyl acrylate, stearyl acrylate, trifluoroethyl acrylate, aminoethyl acrylate, phenyl acrylate, phenoxyethyl acrylate, acrylate-1- Naphthyl ester, 2-naphthyl acrylate, thiophenol acrylate, benzyl mercaptan acrylate, allylated cyclohexyl diacrylate, methoxylated cyclohexyl diacrylate, 1,4- Butylene glycol diacrylate, 1,3-butanediol diacrylate, ethylene glycol diacrylate, diethylene glycol diacrylate, triethylene glycol diacrylate, polyethylene glycol diacrylate, new Pentylene glycol diacrylate, propylene glycol diacrylate, polypropylene glycol diacrylate, triglycerol diacrylate, trimethylolpropane triacrylate, di(trimethylolpropane) tetraacrylate, dineopentaerythritol Monohydroxy pentaacrylate, dineopentyl erythritol hexaacrylate, acrylamide, N-methoxy methacrylamide, N-ethoxy methacrylamide, N-n-butoxy methacrylate Amide, N-isobutoxy methacrylamide, methacrylphenol, methacrylamidephenol, γ-acryloxy propyl trimethoxysilane, N- (2-hydroxyphenyl)acrylamide, N-(3-hydroxyphenyl)acrylamide, N-(4-hydroxyphenyl)acrylamide, o-hydroxyphenyl acrylate, m-hydroxyphenyl acrylate, P-Hydroxyphenyl acrylate, 2-(2-hydroxyphenyl)ethyl acrylate, 2-(3-hydroxyphenyl)ethyl acrylate, 2-(4-hydroxyphenyl)ethyl acrylate, etc., These acryloyl groups are substituted with methacryloyl compounds. Among these, particularly preferred is a monomer selected from ethyl acrylate, 2-hydroxyethyl acrylate, and isobornyl acrylate. Two or more of the above can also be used.

作為不飽和酸或其酸酐,可列舉例如:丙烯酸(以下有記載為「AA」。)、甲基丙烯酸、伊康酸、巴豆酸、馬來酸、富馬酸、醋酸乙烯酯、此等之酸酐等。亦可使用2種以上之上述者。可根據不飽和酸之共聚合比,調整丙烯酸系共聚物之酸價。Examples of unsaturated acids or anhydrides thereof include acrylic acid (hereinafter referred to as "AA"), methacrylic acid, itaconic acid, crotonic acid, maleic acid, fumaric acid, vinyl acetate, and the like. Acid anhydride and so on. Two or more of the above can also be used. The acid value of the acrylic copolymer can be adjusted according to the copolymerization ratio of the unsaturated acid.

作為其他具有不飽和雙鍵之單體可列舉例如:鄰羥基苯乙烯、間羥基苯乙烯、對羥基苯乙烯等。亦可使用2種以上之上述者。Examples of other monomers having unsaturated double bonds include ortho-hydroxystyrene, m-hydroxystyrene, and p-hydroxystyrene. Two or more of the above can also be used.

作為羧酸改性環氧樹脂,較佳為環氧化合物與不飽和酸或不飽和酸酐之反應物。於此,所謂的羧酸改性環氧樹脂,係將環氧化合物之環氧基以羧酸或羧酸酐改性者,且不含環氧基。The carboxylic acid-modified epoxy resin is preferably a reaction product of an epoxy compound and an unsaturated acid or an unsaturated acid anhydride. Here, the so-called carboxylic acid-modified epoxy resin refers to the epoxy group of the epoxy compound modified with carboxylic acid or carboxylic anhydride, and does not contain an epoxy group.

作為環氧化合物可列舉例如:環氧丙基醚類、環氧丙基胺類、環氧樹脂等。更具體而言,作為環氧丙基醚類,例如:甲基環氧丙基醚、乙基環氧丙基醚、丁基環氧丙基醚、乙二醇二環氧丙基醚、二乙二醇二環氧丙基醚、丙二醇二環氧丙基醚、三丙二醇二環氧丙基醚、新戊二醇二環氧丙基醚、雙酚A二環氧丙基醚、氫化雙酚A二環氧丙基醚、雙酚F二環氧丙基醚、雙酚S二環氧丙基醚、雙酚茀二環氧丙基醚、雙酚二環氧丙基醚、四甲基雙酚環氧丙基醚、三羥甲基丙烷三環氧丙基醚、3,4-環氧基環己烷甲酸-3',4'-環氧基環己基甲酯(3,4-Epoxycyclohexylmethyl-3',4'-epoxycyclohexane carboxylate)等。作為環氧丙基胺類可列舉例如:三級丁基環氧丙基胺等。作為環氧樹脂可列舉例如:雙酚A型環氧樹脂、雙酚F型環氧樹脂、聯苯型環氧樹脂、酚醛清漆型環氧樹脂、氫化雙酚A型環氧樹脂等。亦可使用2種以上之上述者。Examples of epoxy compounds include glycidyl ethers, glycidyl amines, and epoxy resins. More specifically, as glycidyl ethers, for example: methyl glycidyl ether, ethyl glycidyl ether, butyl glycidyl ether, ethylene glycol diglycidyl ether, two Ethylene glycol diglycidyl ether, propylene glycol diglycidyl ether, tripropylene glycol diglycidyl ether, neopentyl glycol diglycidyl ether, bisphenol A diglycidyl ether, hydrogenated bis Phenol A Diglycidyl Ether, Bisphenol F Diglycidyl Ether, Bisphenol S Diglycidyl Ether, Bisphenol Diglycidyl Ether, Bisphenol Diglycidyl Ether, Tetramethyl Bisphenol glycidyl ether, trimethylolpropane triglycidyl ether, 3,4-epoxycyclohexanecarboxylic acid-3',4'-epoxycyclohexyl methyl ester (3,4 -Epoxycyclohexylmethyl-3',4'-epoxycyclohexane carboxylate) etc. Examples of glycidylamines include tertiary butylglycidylamine. Examples of the epoxy resin include bisphenol A epoxy resin, bisphenol F epoxy resin, biphenyl epoxy resin, novolak epoxy resin, hydrogenated bisphenol A epoxy resin, and the like. Two or more of the above can also be used.

作為不飽和酸或不飽和酸酐,可列舉先前作為丙烯酸系共聚物之原料所例示者等。Examples of the unsaturated acid or unsaturated acid anhydride include those previously exemplified as the raw material of the acrylic copolymer.

可藉由使具有(甲基)丙烯酸環氧丙酯等之不飽和雙鍵的化合物與前述之丙烯酸系共聚物、羧酸改性環氧樹脂反應,而導入不飽和雙鍵。藉由於樹脂(b)中導入不飽和雙鍵,而可於曝光時提升曝光部分之交聯密度,擴大顯影餘裕,而可形成微細的圖案。The unsaturated double bond can be introduced by reacting a compound having an unsaturated double bond such as glycidyl (meth)acrylate with the aforementioned acrylic copolymer and carboxylic acid-modified epoxy resin. Due to the introduction of unsaturated double bonds in the resin (b), the crosslinking density of the exposed part can be increased during exposure, the development margin can be enlarged, and a fine pattern can be formed.

作為樹脂(b)較佳亦可為使用具有酚性羥基者。藉由使樹脂(b)具有酚性羥基,而與基材表面之羥基、胺基等之極性基形成氫鍵,而可使圖案與基材之密著性提升。As resin (b), it is preferable to use what has a phenolic hydroxyl group. The resin (b) has a phenolic hydroxyl group to form hydrogen bonds with polar groups such as hydroxyl groups and amine groups on the surface of the substrate, so that the adhesion between the pattern and the substrate can be improved.

樹脂(b)的酸價較佳為50~250mgKOH/g。酸價若為50mgKOH/g以上,則對顯影液之溶解度變高,而可抑制顯影殘渣的產生。酸價更佳為60mgKOH/g以上。另一方面,酸價若為250mgKOH/g以下,則可抑制對顯影液過度溶解,而可抑制圖案的膜損。酸價更佳為200mgKOH/g以下。另外,樹脂(b)的酸價係可根據JIS K 0070(1992)進行測定。The acid value of the resin (b) is preferably 50 to 250 mgKOH/g. If the acid value is 50 mgKOH/g or more, the solubility to the developer becomes high, and the generation of development residue can be suppressed. The acid value is more preferably 60 mgKOH/g or more. On the other hand, if the acid value is 250 mgKOH/g or less, excessive dissolution in the developer can be suppressed, and film damage of the pattern can be suppressed. The acid value is more preferably 200 mgKOH/g or less. In addition, the acid value of the resin (b) can be measured in accordance with JIS K 0070 (1992).

作為圖案的形成方法,可列舉例如:將含有前述之導電性粒子(a)、樹脂(b)、因應需要之其他成分的糊,藉由網版印刷、照相凹版印刷、柔版印刷、噴墨印刷等之印刷進行圖案形成的方法、或藉由具有曝光及顯影之步驟的光蝕刻法進行圖案形成的方法等。作為藉由光蝕刻法進行圖案形成的方法,可列舉例如:於非感光性糊塗布膜上塗布感光光阻,並藉由曝光、顯影、蝕刻及去除光阻之步驟而形成圖案之方法、由感光性糊塗布膜藉由曝光及顯影步驟而直接形成圖案之方法等。其中,從圖案的細線化及製造步驟數縮短化的觀點來看,較佳為由感光性糊塗布膜藉由具有曝光及顯影之步驟的光蝕刻法進行圖案形成的方法。As a method of forming a pattern, for example, a paste containing the aforementioned conductive particles (a), resin (b), and other components as needed is used by screen printing, gravure printing, flexographic printing, and inkjet printing. A method of pattern formation by printing such as printing, or a method of pattern formation by a photoetching method having steps of exposure and development, etc. As a method of pattern formation by a photoetching method, for example, a method of coating a photosensitive photoresist on a non-photosensitive paste coating film, and forming a pattern through the steps of exposure, development, etching, and removal of the photoresist, and The photosensitive paste coating film is directly patterned by exposure and development steps. Among them, from the viewpoint of pattern thinning and reduction in the number of manufacturing steps, a method of patterning a photosensitive paste coating film by a photoetching method having steps of exposure and development is preferred.

糊中導電性粒子(a)的含量較佳為固體成分中65~90重量%。The content of the conductive particles (a) in the paste is preferably 65 to 90% by weight in the solid content.

本發明之導電圖案之形成方法,較佳具有光蝕刻步驟,該光蝕刻步驟係藉由於基材上塗布感光性糊而形成塗布膜,並藉由將該塗布膜曝光及顯影而形成圖案,其中該感光性糊含有:導電性粒子(a)、含有羧基之樹脂(B)(亦稱羧基含有樹脂(B))、具有不飽和雙鍵之反應性單體(c)以及光聚合起始劑(d)。藉由形成此種導電圖案,可以簡單的方法容易地形成微細圖案。The method for forming a conductive pattern of the present invention preferably has a photoetching step. The photoetching step is to form a coating film by coating a photosensitive paste on a substrate, and to form a pattern by exposing and developing the coating film, wherein The photosensitive paste contains: conductive particles (a), carboxyl-containing resin (B) (also known as carboxyl-containing resin (B)), reactive monomer (c) with unsaturated double bond, and photopolymerization initiator (d). By forming such a conductive pattern, a fine pattern can be easily formed in a simple method.

作為羧基含有樹脂(B),可列舉例如:上述之具有羧基之樹脂(b)等。亦可含有2種以上之上述者。Examples of the carboxyl group-containing resin (B) include the above-mentioned resin (b) having a carboxyl group. Two or more of the above may also be contained.

羧基含有樹脂(B)的酸價,例如:丙烯酸系共聚物的情形,可根據構成成分中不飽和酸之比例,調整成所期望之範圍。羧酸改性環氧樹脂的情形,可藉由使多元酸酐反應,調整成所期望之範圍。羧酸改性酚醛樹脂的情形,可藉由構成成分中多元酸酐之比例,調整成所期望之範圍。The acid value of the carboxyl group-containing resin (B), for example, in the case of an acrylic copolymer, can be adjusted to a desired range according to the ratio of unsaturated acids in the constituent components. In the case of a carboxylic acid-modified epoxy resin, it can be adjusted to a desired range by reacting a polybasic acid anhydride. In the case of carboxylic acid-modified phenol resin, the ratio of the polybasic acid anhydride in the constituent components can be adjusted to a desired range.

作為具有不飽和雙鍵之反應性單體(c),可列舉例如:先前作為丙烯酸系共聚物之原料所例示之丙烯酸系單體、苯乙烯「以下(St)」等。亦可含有2種以上之上述者。Examples of the reactive monomer (c) having an unsaturated double bond include acrylic monomers previously exemplified as raw materials for acrylic copolymers, styrene "below (St)", and the like. Two or more of the above may also be contained.

而且,步驟(1)中所使用之糊含有丙烯酸系共聚物及具有不飽和雙鍵之反應性單體(c)的情形,相對於丙烯酸系共聚物100重量份,糊中具有不飽和雙鍵之反應性單體(c)的含量較佳為1~100重量份。藉由含有1重量份以上之具有不飽和雙鍵之反應性單體(c),可形成微細的圖案。另一方面,藉由含有100重量份以下之具有不飽和雙鍵之反應性單體(c),可適度地抑制硬化收縮,而進一步提升導電性。In addition, when the paste used in step (1) contains an acrylic copolymer and a reactive monomer (c) having an unsaturated double bond, the paste has an unsaturated double bond relative to 100 parts by weight of the acrylic copolymer The content of the reactive monomer (c) is preferably 1-100 parts by weight. By containing 1 part by weight or more of the reactive monomer (c) having an unsaturated double bond, a fine pattern can be formed. On the other hand, by containing 100 parts by weight or less of the reactive monomer (c) having an unsaturated double bond, curing shrinkage can be moderately suppressed, and conductivity can be further improved.

所謂的光聚合起始劑(d),係指吸收紫外線等之短波長的光,引起分解或奪氫反應,而產生自由基之化合物。作為光聚合起始劑(d),可列舉例如:二苯甲酮衍生物、苯乙酮衍生物、9-氧硫𠮿

Figure 109109931-0000-3
衍生物、苄基衍生物、安息香衍生物、肟系化合物、α-羥基酮系化合物、α-胺基烷基酚系化合物、膦氧化物系化合物、蔥酮化合物、蒽醌化合物等。作為二苯甲酮衍生物,可列舉例如:二苯甲酮、O-苯甲醯基安息香酸甲基、4,4'-雙(二甲基胺基)二苯甲酮、4,4'-雙(二乙胺基)二苯甲酮、4,4'-二氯二苯甲酮、茀酮、4-苯甲醯基-4'-甲基二苯甲酮等。作為苯乙酮衍生物,可列舉例如:對三級丁基二氯苯乙酮、4-疊氮基苯亞甲基苯乙酮、2,2'-二乙氧基苯乙酮等。作為9-氧硫𠮿
Figure 109109931-0000-3
衍生物,可列舉例如:9-氧硫𠮿
Figure 109109931-0000-3
、2-甲基9-氧硫𠮿
Figure 109109931-0000-3
、2-氯9-氧硫𠮿
Figure 109109931-0000-3
、2-異丙基9-氧硫𠮿
Figure 109109931-0000-3
、二乙基-9-氧硫𠮿
Figure 109109931-0000-3
等。作為苄基衍生物,可列舉例如:苄基、苄基二甲基縮酮、苄基-β-甲氧基乙縮醛等。作為安息香衍生物,可列舉例如:安息香、安息香甲基醚、安息香丁醚等。作為肟系化合物,可列舉例如:1,2-辛烷二酮-1-[4-(苯硫基)-2-(O-苯甲醯基肟)]、乙酮-1-[9-乙基-6-(2-甲基苯甲醯基)-9H-咔唑-3-基]-1-(O-乙醯基肟)、1-苯基-1,2-丁二酮-2-(O-甲氧羰基)肟、1-苯基-丙烷二酮-2-(O-乙氧羰基)肟、1-苯基-丙烷二酮-2-(O-苯甲醯基)肟、1,3-二苯基-丙烷三酮-2-(O-乙氧羰基)肟、1-苯基-3-乙氧基-丙烷三酮-2-(O-苯甲醯基)肟等。作為α-羥基酮系化合物,可列舉例如:2-羥基-2-甲基-1-苯基-丙烷-1-酮、1-[4-(2-羥基環氧基)-苯基]-2-羥基-2-甲基-1-丙烷-1-酮等。作為α-胺基烷基酚系化合物,可列舉例如:2-甲基-(4-甲基硫苯基)-2-
Figure 109109931-A0304-12-0020-6
啉丙烷-1-酮、2-苄基-2-二甲基胺基-1-(4-
Figure 109109931-A0304-12-0020-6
啉苯基)-丁烷-1-酮、2-二甲基胺基-2-(4-甲基苄基)-1-(4-
Figure 109109931-A0304-12-0020-6
啉-4-基-苯基)丁烷-1-酮等。作為膦氧化物系化合物,可列舉例如:2,4,6-三甲基苯甲醯基-二苯基-氧化膦、雙(2,4,6-三甲基苯甲醯基)-苯基氧化膦等。作為蔥酮化合物,可列舉蔥酮、苯并蔥酮、二苯并環庚酮、亞甲基蔥酮等。作為蒽醌化合物,可列舉例如:蒽醌、2-三級丁基蒽醌、2-戊基蒽醌、β-氯蒽醌等。亦可含有2種以上之上述者。此等當中,較佳為光感度高的肟系化合物。The so-called photopolymerization initiator (d) refers to a compound that absorbs short-wavelength light such as ultraviolet light and causes decomposition or hydrogen abstraction reaction to generate free radicals. As the photopolymerization initiator (d), for example, benzophenone derivatives, acetophenone derivatives, and 9-oxysulfur 𠮿
Figure 109109931-0000-3
Derivatives, benzyl derivatives, benzoin derivatives, oxime compounds, α-hydroxyketone compounds, α-aminoalkylphenol compounds, phosphine oxide compounds, onion compounds, anthraquinone compounds, etc. Examples of benzophenone derivatives include benzophenone, O-benzophenone benzoic acid methyl, 4,4'-bis(dimethylamino)benzophenone, 4,4' -Bis(diethylamino)benzophenone, 4,4'-dichlorobenzophenone, quinone, 4-benzyl-4'-methylbenzophenone, etc. Examples of acetophenone derivatives include p-tertiary butyldichloroacetophenone, 4-azidobenzylidene acetophenone, 2,2'-diethoxyacetophenone, and the like. As 9-oxysulfur 𠮿
Figure 109109931-0000-3
Derivatives, for example: 9-oxysulfur 𠮿
Figure 109109931-0000-3
, 2-Methyl 9-oxysulfur 𠮿
Figure 109109931-0000-3
, 2-Chloro 9-oxysulfur 𠮿
Figure 109109931-0000-3
, 2-isopropyl 9-oxysulfur 𠮿
Figure 109109931-0000-3
, Diethyl-9-oxysulfur 𠮿
Figure 109109931-0000-3
Wait. Examples of benzyl derivatives include benzyl, benzyl dimethyl ketal, benzyl-β-methoxy acetal, and the like. Examples of benzoin derivatives include benzoin, benzoin methyl ether, and benzoin butyl ether. Examples of oxime-based compounds include 1,2-octanedione-1-[4-(phenylthio)-2-(O-benzyloxime)] and ethyl ketone-1-[9- Ethyl-6-(2-methylbenzyl)-9H-carbazol-3-yl)-1-(O-acetoxime), 1-phenyl-1,2-butanedione- 2-(O-methoxycarbonyl)oxime, 1-phenyl-propanedione-2-(O-ethoxycarbonyl)oxime, 1-phenyl-propanedione-2-(O-benzyl) Oxime, 1,3-diphenyl-propanetrione-2-(O-ethoxycarbonyl)oxime, 1-phenyl-3-ethoxy-propanetrione-2-(O-benzyl) Oxime etc. Examples of α-hydroxy ketone compounds include 2-hydroxy-2-methyl-1-phenyl-propan-1-one, 1-[4-(2-hydroxyepoxy)-phenyl]- 2-hydroxy-2-methyl-1-propan-1-one and so on. Examples of α-aminoalkylphenol-based compounds include 2-methyl-(4-methylthiophenyl)-2-
Figure 109109931-A0304-12-0020-6
Phenylpropan-1-one, 2-benzyl-2-dimethylamino-1-(4-
Figure 109109931-A0304-12-0020-6
Phenylphenyl)-butane-1-one, 2-dimethylamino-2-(4-methylbenzyl)-1-(4-
Figure 109109931-A0304-12-0020-6
Lin-4-yl-phenyl)butan-1-one and the like. Examples of the phosphine oxide compound include 2,4,6-trimethylbenzyl-diphenyl-phosphine oxide, and bis(2,4,6-trimethylbenzyl)-benzene Based phosphine oxide and so on. Examples of onionone compounds include onionone, benzoonionone, dibenzocycloheptanone, and methylene onionone. Examples of the anthraquinone compound include anthraquinone, 2-tertiarybutylanthraquinone, 2-pentylanthraquinone, β-chloroanthraquinone, and the like. Two or more of the above may also be contained. Among these, oxime compounds with high photosensitivity are preferred.

相對於羧基含有樹脂(B)100重量份,感光性糊中光聚合起始劑(d)的含量較佳為1~30重量份。光聚合起始劑(d)的含量為1重量份以上時,曝光部分的硬化密度增加,而可提高顯影後的殘膜率。另一方面,光聚合起始劑(d)的含量較佳為30重量份以下時,可抑制因圖案上部的光聚合起始劑(d)所致的過度之光吸收。其結果,可容易形成錐形圖案,而提升與基材之密著性。The content of the photopolymerization initiator (d) in the photosensitive paste is preferably 1 to 30 parts by weight with respect to 100 parts by weight of the carboxyl group-containing resin (B). When the content of the photopolymerization initiator (d) is 1 part by weight or more, the curing density of the exposed portion increases, and the residual film rate after development can be increased. On the other hand, when the content of the photopolymerization initiator (d) is preferably 30 parts by weight or less, excessive light absorption due to the photopolymerization initiator (d) on the upper part of the pattern can be suppressed. As a result, a tapered pattern can be easily formed, and the adhesion to the substrate can be improved.

圖案形成用糊,除上述以外,亦可摻合溶劑、塑化劑、調平劑(leveling agent)、界面活性劑、矽烷偶合劑、消泡劑、顏料等之添加劑。In addition to the above, the pattern forming paste can also be blended with additives such as solvents, plasticizers, leveling agents, surfactants, silane coupling agents, defoamers, and pigments.

作為塑化劑之具體例,可列舉酞酸二丁酯、酞酸二辛酯、聚乙二醇、甘油等。作為調平劑的具體例,可列舉特殊乙烯系聚合物、特殊丙烯酸系聚合物等。Specific examples of the plasticizer include dibutyl phthalate, dioctyl phthalate, polyethylene glycol, and glycerin. Specific examples of the leveling agent include special ethylene-based polymers, special acrylic-based polymers, and the like.

作為矽烷偶合劑,可列舉甲基三甲氧基矽烷、二甲基二乙氧基矽烷、苯基三環氧基矽烷、六甲基二矽氮烷、3-甲基丙烯醯氧基丙基三甲氧基矽烷、3-環氧丙氧基丙基三甲氧基矽烷、乙烯基三甲氧矽烷、3-環氧丙氧基丙基甲基二乙氧基矽烷等。As the silane coupling agent, methyltrimethoxysilane, dimethyldiethoxysilane, phenyltriepoxysilane, hexamethyldisilazane, 3-methacryloxypropyltrimethyl Oxyoxysilane, 3-glycidoxypropyltrimethoxysilane, vinyltrimethoxysilane, 3-glycidoxypropylmethyldiethoxysilane, etc.

作為溶劑可列舉例如:N,N-二甲基乙醯胺、N,N-二甲基甲醯胺、N-甲基-2-吡咯啶酮、2-二甲基胺基乙醇「以下、(DMEA)」、二甲基咪唑啶酮、二甲亞碸、γ-丁內酯、乳酸乙酯、1-甲氧基-2-丙醇、1-乙氧基-2-丙醇、乙二醇單正丙醚、二丙酮醇、四氫糠醇、丙二醇單甲醚乙酸酯、二乙二醇單乙醚乙酸酯、二乙二醇單甲醚、二乙二醇單乙醚乙酸酯、二乙二醇單丁醚、二乙二醇、2,2,4,-三甲基-1,3-戊二醇單異丁酸酯等。亦可含有2種以上之上述者。溶劑的沸點為150℃以上。沸點為150℃以上時,溶劑的揮發受到抑制,可抑制糊的增黏。Examples of the solvent include: N,N-dimethylacetamide, N,N-dimethylformamide, N-methyl-2-pyrrolidone, 2-dimethylaminoethanol "below, (DMEA)'', dimethylimidazolidinone, dimethylsulfoxide, γ-butyrolactone, ethyl lactate, 1-methoxy-2-propanol, 1-ethoxy-2-propanol, ethyl Glycol mono-n-propyl ether, diacetone alcohol, tetrahydrofurfuryl alcohol, propylene glycol monomethyl ether acetate, diethylene glycol monoethyl ether acetate, diethylene glycol monomethyl ether, diethylene glycol monoethyl ether acetate , Diethylene glycol monobutyl ether, diethylene glycol, 2,2,4,-trimethyl-1,3-pentanediol monoisobutyrate, etc. Two or more of the above may also be contained. The boiling point of the solvent is 150°C or higher. When the boiling point is above 150°C, the volatilization of the solvent is suppressed, and the thickening of the paste can be suppressed.

可列舉由具有感光性之糊塗布膜藉由光蝕刻法進行圖案形成之方法為例,進一步詳細說明步驟(1)。A method of patterning a photosensitive paste coating film by a photoetching method can be cited as an example, and step (1) will be further described in detail.

首先,混合導電性粒子(a)、樹脂(b)、溶劑及因應需要之其他成分而製作糊。作為混合裝置,可列舉例如:三輥磨機、球磨機、遊星式球磨機等之分散機、混練機等。First, the conductive particles (a), resin (b), solvent, and other components as needed are mixed to make a paste. As a mixing device, for example, a three-roll mill, a ball mill, a star ball mill, etc., a disperser, a kneader, etc. can be mentioned.

接著,將所得到的糊於基材上進行塗布、並乾燥。作為糊的塗布方法可列舉例如:使用旋轉器之旋轉塗布、使用噴灑塗布、輥塗布、網版印刷、刮刀塗布機、模頭塗布機、壓延塗布機、彎面塗布機或棒塗布機之塗布等。作為乾燥方法,可列舉例如:藉由烘箱、加熱板、紅外線等之加熱乾燥、真空乾燥等。乾燥溫度較佳為50~180℃,乾燥時間較佳為1分鐘~數小時。Next, the obtained paste is applied on a substrate and dried. Examples of paste coating methods include spin coating using a spinner, spray coating, roll coating, screen printing, knife coater, die coater, calender coater, curved surface coater, or bar coater. Wait. As a drying method, for example, heating drying by an oven, a hot plate, infrared rays, etc., vacuum drying, etc. are mentioned. The drying temperature is preferably 50 to 180°C, and the drying time is preferably 1 minute to several hours.

接著,於所得到之塗布膜上,透過任一之圖案形成用遮罩進行曝光、形成潛像。作為曝光之光源,較佳使用水銀燈之i線(365nm)、h線(405nm)或g線(436nm)。Next, on the obtained coating film, exposure is performed through any mask for pattern formation to form a latent image. As a light source for exposure, the i-line (365nm), h-line (405nm) or g-line (436nm) of a mercury lamp is preferably used.

曝光後,藉由使用顯影液顯影,溶解去除未曝光部分,形成所欲之圖案。作為進行鹼顯影的情形之顯影液,可列舉例如:氫氧化四甲基銨、二乙醇胺、二乙胺基乙醇、氫氧化鈉、氫氧化鉀、碳酸鈉、碳酸鉀、三乙基胺、二乙胺、甲胺、二甲胺、醋酸二甲基胺基乙酯、二甲基胺基乙醇、甲基丙烯酸二甲基胺基乙酯、環己胺、乙二胺、六亞甲基二胺等之水溶液。亦可使用2種以上之上述者。又,視情況,亦可於此等水溶液中,添加1種以上之N-甲基-2-吡咯啶酮、N,N-二甲基甲醯胺、N,N-二甲基乙醯胺、二甲亞碸、γ-丁內酯等之極性溶劑;甲醇、乙醇、異丙醇等之醇類;乳酸乙酯、丙二醇單甲醚乙酸酯等之酯類;環戊酮、環己酮、異丁酮、甲基異丁酮等之酮類;界面活性劑等。After exposure, develop by using a developer solution to dissolve and remove the unexposed part to form the desired pattern. As the developer in the case of alkali development, for example, tetramethylammonium hydroxide, diethanolamine, diethylaminoethanol, sodium hydroxide, potassium hydroxide, sodium carbonate, potassium carbonate, triethylamine, diethanolamine Ethylamine, methylamine, dimethylamine, dimethylaminoethyl acetate, dimethylaminoethanol, dimethylaminoethyl methacrylate, cyclohexylamine, ethylenediamine, hexamethylene two Aqueous solutions such as amines. Two or more of the above can also be used. Also, depending on the situation, one or more of N-methyl-2-pyrrolidone, N,N-dimethylformamide, and N,N-dimethylacetamide can also be added to these aqueous solutions. , Dimethyl sulfide, γ-butyrolactone, etc.; alcohols such as methanol, ethanol, isopropanol, etc.; esters such as ethyl lactate, propylene glycol monomethyl ether acetate, etc.; cyclopentanone, cyclohexane Ketones such as ketones, isobutyl ketone and methyl isobutyl ketone; surfactants, etc.

作為顯影方法,可列舉例如:一邊將具有經曝光之糊塗布膜的基材靜置或旋轉一邊將顯影液噴灑於塗布膜面上之方法、將具有經曝光之糊塗布膜的基材浸漬於顯影液中之方法、一邊將具有經曝光之糊塗布膜的基材浸漬於顯影液中一邊施加超音波之方法等。As the development method, for example, a method of spraying the developer solution on the surface of the coating film while the substrate with the exposed paste coating film is left standing or rotating, and immersing the substrate with the exposed paste coating film in The method in the developer solution, the method of applying ultrasonic waves while immersing the substrate with the exposed paste coating film in the developer solution.

顯影後,亦可以清洗液施以清洗處理。作為清洗液,可列舉例如:水、或者於水中添加乙醇、異丙醇等之醇類或乳酸乙酯、丙二醇單甲醚乙酸酯等之酯類而成之水溶液等。After developing, the cleaning solution can also be used for cleaning. As the cleaning liquid, for example, water, or an aqueous solution obtained by adding alcohols such as ethanol and isopropanol or esters such as ethyl lactate and propylene glycol monomethyl ether acetate to water.

由步驟(1)而得之圖案的厚度較佳為3μm以下。可藉由將厚度設為3μm以下,形成微細導電圖案。又,酸性水溶液變得容易滲入,即時短時間亦可得到更良好的導電性。The thickness of the pattern obtained in step (1) is preferably 3 μm or less. A fine conductive pattern can be formed by setting the thickness to 3 μm or less. In addition, the acidic aqueous solution becomes easy to penetrate, and even better conductivity can be obtained in a short time.

接著針對步驟(2)進行說明。Next, step (2) will be described.

步驟(2)係使於步驟(1)中所形成之圖案與在25℃的pH為1.2~3.5的酸性水溶液接觸之步驟,該酸性水溶液包含至少一種在25℃的陰離子之共軛酸的酸解離常數(pKa)為1.0以下的鹽。Step (2) is a step in which the pattern formed in step (1) is brought into contact with an acidic aqueous solution with a pH of 1.2 to 3.5 at 25°C, the acidic aqueous solution containing at least one conjugate acid of an anion at 25°C A salt having a dissociation constant (pKa) of 1.0 or less.

酸性水溶液包含至少1種在25℃的陰離子之共軛酸的酸解離常數(pKa)為1.0以下之鹽。於此,所謂的「鹽」係指由質子以外的陽離子與陰離子構成之成分,本發明中,「鹽」亦包含在水溶液中離子化成陽離子與陰離子之狀態者。又,陽離子亦有存在一部分與羥基鍵結之離子,此情形下之水溶液呈酸性。藉由鹽中所含之陰離子存在於酸水溶液中,而促進原子自導電性粒子(a)表面擴散,而使導電性提升。如後述般,即使pH為1.2以上,藉由鹽中所含之質子以外的陽離子存在於酸水溶液中,亦可提高陰離子的濃度。其結果,可抑制因導電圖案中所含之導電性粒子(a)之腐蝕所致之導電性降低。藉由將鹽中所含之陰離子之共軛酸在25℃的pKa設為1.0以下,可促進導電性粒子之原子擴散,而使導電性提升。鹽中所含之陰離子之共軛酸在25℃的pKa更佳為-5.0以下。鹽中所含之陰離子之共軛酸在25℃的pKa,可鑑定鹽中所含之陰離子之後,而針對其共軛酸,使用吸光分析法進行測定。此外,鹽中所含之陰離子之共軛酸的pKa為-2以下的情形下,亦可參照文獻值等。The acidic aqueous solution contains at least one salt of the conjugate acid of an anion at 25°C with an acid dissociation constant (pKa) of 1.0 or less. Here, the so-called "salt" refers to a component composed of cations and anions other than protons. In the present invention, "salts" also include those ionized into cations and anions in an aqueous solution. In addition, the cation also has some ions bonded to the hydroxyl group. In this case, the aqueous solution is acidic. The presence of the anion contained in the salt in the acid aqueous solution promotes the diffusion of atoms from the surface of the conductive particle (a), thereby improving conductivity. As described later, even if the pH is 1.2 or more, the presence of cations other than the protons contained in the salt in the acid aqueous solution can increase the anion concentration. As a result, it is possible to suppress the decrease in conductivity due to corrosion of the conductive particles (a) contained in the conductive pattern. By setting the pKa of the conjugate acid of the anion contained in the salt to 1.0 or less at 25° C., the diffusion of atoms of the conductive particles can be promoted and the conductivity can be improved. The pKa of the conjugate acid of the anion contained in the salt at 25°C is more preferably -5.0 or less. The pKa of the conjugate acid of the anion contained in the salt at 25°C can be identified after the anion contained in the salt is identified, and then the conjugate acid of the salt can be determined by the absorption analysis method. In addition, when the pKa of the conjugate acid of the anion contained in the salt is -2 or less, you can refer to literature values and the like.

在25℃的陰離子之共軛酸的pKa為1.0以下之鹽只要為水溶性則無特別限定,可列舉例如:硝酸鈉、硝酸鉀、氯化鈉、氯化鉀、氯化鎳(II)、氯化鐵(II)、氯化鐵(III)、氯化錫(II)、氯化銅(II)、溴化鈉、溴化鉀、溴化鎳(II)、溴化鐵(II)、溴化鐵(III)、溴化銅(II)、碘化鈉、碘化鉀、碘化鎳(II)、硫酸氫鈉、硫酸氫鉀、苯磺酸鈉、苯磺酸鉀、三氟醋酸鈉、三氟醋酸鉀等。亦可含有2種以上之上述者。The salt having the pKa of the conjugate acid of the anion at 25°C of 1.0 or less is not particularly limited as long as it is water-soluble, and examples include sodium nitrate, potassium nitrate, sodium chloride, potassium chloride, nickel (II) chloride, Iron chloride (II), iron chloride (III), tin chloride (II), copper chloride (II), sodium bromide, potassium bromide, nickel bromide (II), iron bromide (II), Iron(III) bromide, copper(II) bromide, sodium iodide, potassium iodide, nickel(II) iodide, sodium bisulfate, potassium bisulfate, sodium benzenesulfonate, potassium benzenesulfonate, sodium trifluoroacetate, Potassium trifluoroacetate and so on. Two or more of the above may also be contained.

鹽的濃度較佳為0.05mol/L以上。藉由將鹽的濃度設為0.05mol/L以上,可促進原子自導電性粒子(a)表面擴散,而使導電性提升。於此「鹽的濃度」係指含有2種以上的鹽之情形的鹽之合計的濃度。The salt concentration is preferably 0.05 mol/L or more. By setting the salt concentration to 0.05 mol/L or more, the diffusion of atoms from the surface of the conductive particle (a) can be promoted, and the conductivity can be improved. Here, the "concentration of salt" refers to the total concentration of salt when two or more kinds of salt are contained.

酸性水溶液中所含之在25℃的陰離子之共軛酸的pKa為1.0以下之鹽的種類及濃度,係可藉由離子層析法、感應耦合電漿質譜分析法等進行分析。The type and concentration of the salt whose pKa of the conjugate acid of the anion at 25°C contained in the acidic aqueous solution is 1.0 or less can be analyzed by ion chromatography, inductively coupled plasma mass spectrometry, etc.

酸性水溶液於25℃之pH為1.2~3.5。藉由將pH設為1.2以上,可抑制因導電圖案中所含之導電性粒子(a)之腐蝕所致之導電性降低。另一方面,藉由將pH設為3.5以下,可促進原子自導電性粒子(a)表面的擴散,而使導電性提升。pH更佳為2.5以下。pH係可藉由玻璃電極法,從玻璃電極與比較電極之2個電極間所產生之電位差進行測定。The pH of the acidic aqueous solution at 25°C is 1.2 to 3.5. By setting the pH to 1.2 or more, the decrease in conductivity due to corrosion of the conductive particles (a) contained in the conductive pattern can be suppressed. On the other hand, by setting the pH to 3.5 or less, the diffusion of atoms from the surface of the conductive particle (a) can be promoted, and the conductivity can be improved. The pH is more preferably 2.5 or less. The pH can be measured by the glass electrode method from the potential difference between the two electrodes of the glass electrode and the comparison electrode.

酸性水溶液中,作為除了上述鹽以外的成分,亦可使其在規定的pH範圍的方式含有酸。作為酸,較佳為含有在25℃的酸解離常數(pKa)為2~5之酸,即弱酸。含有多元酸的情形,較佳為最容易電離的第1段階之pKa為2~5;含有2種以上之酸的情形,較佳為最容易電離的酸之pKa為2~5。藉由使用pKa為2以上之弱酸,可提升受殘存於導電圖案中之酸所影響之長期可靠性。另一方面,藉由將pKa設為5以下,可使導電性更加提升。pKa更佳為3.5以下。In the acidic aqueous solution, as a component other than the above-mentioned salt, an acid may be contained in a predetermined pH range. The acid preferably contains an acid having an acid dissociation constant (pKa) of 2 to 5 at 25°C, that is, a weak acid. In the case of containing a polybasic acid, the pKa of the first stage that is most easily ionized is preferably 2-5; in the case of containing two or more acids, the pKa of the acid that is most easily ionized is preferably 2-5. By using a weak acid with a pKa of 2 or more, the long-term reliability affected by the acid remaining in the conductive pattern can be improved. On the other hand, by setting the pKa to 5 or less, the conductivity can be further improved. The pKa is more preferably 3.5 or less.

作為在25℃之pKa為2~5之酸,可列舉例如:磷酸、檸檬酸、醋酸、丙酸、抗壞血酸、蟻酸、乳酸等。pKa係可藉由分析來鑑定酸,並藉由針對該酸使用吸光分析法而進行測定。酸HX在水溶液中,係以HX與X- 兩種狀態存在,可由HX與X- 之吸收光譜之差,測定水溶液中之HX與X- 之濃度,而可基於以下數學式(1)進行計算。Examples of acids having a pKa of 2 to 5 at 25°C include phosphoric acid, citric acid, acetic acid, propionic acid, ascorbic acid, formic acid, and lactic acid. The pKa is an acid that can be identified by analysis, and can be measured by using an absorption analysis method for the acid. Acid HX in the aqueous solution, based in HX and X - two states exist, and may be HX X - the difference between the absorption spectrum, measured in aqueous solution of HX and X - concentration of, and can be calculated based on the following equation (1) .

Figure 02_image001
Figure 02_image001

在25℃的pKa為2~5之酸的濃度較佳為0.05~1mol/L。藉由將濃度設為0.05mol/L,可在短時間進一步提升導電性。另一方面,藉由將濃度設為1mol/L以下,酸不易殘留於配線上,可使可靠性提升。而且,濃度可根據所含之酸的種類,而可適宜地調整成所欲之pH。The concentration of the acid having a pKa of 2 to 5 at 25°C is preferably 0.05 to 1 mol/L. By setting the concentration to 0.05mol/L, the conductivity can be further improved in a short time. On the other hand, by setting the concentration to 1 mol/L or less, acid does not easily remain on the wiring, and reliability can be improved. Moreover, the concentration can be appropriately adjusted to a desired pH according to the type of acid contained.

於步驟(2),與圖案接觸之酸性水溶液的液溫較佳為40℃~90℃。藉由將液溫設為40℃以上,可在更短時間使導電性提升。液溫更佳為60℃以上。另一方面,藉由將液溫設為90℃以下,可抑制酸性水溶液之蒸發。而且,酸性水溶液的液溫,可根據所含之酸的種類而可適宜地調整。In step (2), the liquid temperature of the acidic aqueous solution in contact with the pattern is preferably 40°C to 90°C. By setting the liquid temperature to 40°C or higher, the conductivity can be improved in a shorter time. The liquid temperature is more preferably 60°C or higher. On the other hand, by setting the liquid temperature to 90°C or lower, evaporation of the acidic aqueous solution can be suppressed. Furthermore, the liquid temperature of the acidic aqueous solution can be appropriately adjusted according to the kind of acid contained.

於步驟(2),酸性水溶液可預先加溫再使其與圖案接觸,亦可在將圖案與酸性水溶液接觸的狀態下加熱。作為加熱方法,可列舉例如:藉由加熱板、熱風烘箱、惰性烘箱、IR爐、微波等之加熱、氙閃光燈照射等。In step (2), the acidic aqueous solution can be heated in advance and then brought into contact with the pattern, or it can be heated while the pattern is in contact with the acidic aqueous solution. Examples of the heating method include heating by a hot plate, hot air oven, inert oven, IR furnace, microwave, etc., xenon flash lamp irradiation, and the like.

酸性水溶液的濃度較佳為0.05~1mol/L。藉由將濃度設為0.05mol/L,可在短時間進一步提升導電性。另一方面,藉由將濃度設為1mol/L以下,酸不易殘留於配線上,可使可靠性提升。而且,濃度可根據所含之酸的種類,而可適宜地調整成所欲之pH。The concentration of the acidic aqueous solution is preferably 0.05 to 1 mol/L. By setting the concentration to 0.05mol/L, the conductivity can be further improved in a short time. On the other hand, by setting the concentration to 1 mol/L or less, acid does not easily remain on the wiring, and reliability can be improved. Moreover, the concentration can be appropriately adjusted to a desired pH according to the type of acid contained.

由步驟(2)而得之導電圖案,亦可以清洗液施以清洗處理。於此作為清洗液,可列舉例如:水或者於水中添加乙醇或者異丙醇等之醇類或乳酸乙酯或者丙二醇單甲醚乙酸酯等之酯類而成之水溶液。可藉由進行清洗處理清洗殘留之酸,而可提高配線之長期可靠性。 [實施例]The conductive pattern obtained in step (2) can also be cleaned with a cleaning solution. Here, as the cleaning liquid, for example, water or an aqueous solution obtained by adding alcohols such as ethanol or isopropanol or esters such as ethyl lactate or propylene glycol monomethyl ether acetate to water. The residual acid can be cleaned by cleaning treatment, and the long-term reliability of the wiring can be improved. [Example]

以下,列舉實施例及比較例詳細說明本發明,但本發明之態樣並非限定於此等。Hereinafter, the present invention will be explained in detail with examples and comparative examples, but the aspects of the present invention are not limited to these.

於各實施例及比較例所使用之材料如下。The materials used in the examples and comparative examples are as follows.

[導電性粒子(a)] 體積平均粒徑0.3μm的銀粒子 [具有不飽和雙鍵之反應性單體(c)] LIGHT ACRYLATE BP-4EA(丙烯酸系單體;共榮社化學股份有限公司製)。[Conductive particles (a)] Silver particles with a volume average particle size of 0.3μm [Reactive monomer with unsaturated double bond (c)] LIGHT ACRYLATE BP-4EA (acrylic monomer; manufactured by Kyoeisha Chemical Co., Ltd.).

(合成例1) 使5質量份之甲基丙烯酸環氧丙酯(以下,有記載為「GMA」。)與EA/甲基丙烯酸-2-乙基己酯(以下,有記載為「2-EHMA」。)/苯乙烯/丙烯酸之丙烯酸系共聚物(共聚合比率(質量份):20/40/20/15)進行加成反應者 於氮氣環境的反應容器中,饋入150g之後述的DMEA,使用油浴升溫至80℃。於其中,耗費1小時滴下包含20g之EA、40g之2-EHMA、20g之St、15g之AA、0.8g之2,2'-偶氮雙異丁腈及10g之DMEA之混合物。滴下結束後,進一步進行6小時聚合反應。其後,添加1g之氫醌單甲醚,停止聚合反應。接著,耗費0.5小時滴下包含5g之GMA、1g之氯化三乙基苄銨及10g之DMEA之混合物。滴下結束後,進一步進行2小時加成反應。藉由利用甲醇純化所得到之反應溶液而去除未反應雜質,進一步真空乾燥24小時,藉此得到丙烯酸系共聚物(B-1)。所得到之丙烯酸系共聚物(B-1)的酸價為103mgKOH/g。(Synthesis example 1) 5 parts by mass of glycidyl methacrylate (hereinafter referred to as "GMA") and EA/-2-ethylhexyl methacrylate (hereinafter referred to as "2-EHMA")/ Acrylic copolymer of styrene/acrylic acid (copolymerization ratio (parts by mass): 20/40/20/15) for addition reaction In a reaction vessel in a nitrogen atmosphere, 150 g of DMEA described later was fed, and the temperature was raised to 80°C using an oil bath. In it, it took 1 hour to drop a mixture containing 20g of EA, 40g of 2-EHMA, 20g of St, 15g of AA, 0.8g of 2,2'-azobisisobutyronitrile and 10g of DMEA. After the dropping, the polymerization reaction was further carried out for 6 hours. After that, 1 g of hydroquinone monomethyl ether was added to stop the polymerization reaction. Then, it took 0.5 hour to drop a mixture containing 5 g of GMA, 1 g of triethylbenzylammonium chloride, and 10 g of DMEA. After completion of the dropping, the addition reaction was further carried out for 2 hours. The obtained reaction solution was purified with methanol to remove unreacted impurities, and further vacuum-dried for 24 hours, thereby obtaining an acrylic copolymer (B-1). The acid value of the obtained acrylic copolymer (B-1) was 103 mgKOH/g.

(合成例2) 使5質量份之GMA與環氧乙烷改性雙酚A二丙烯酸酯(FA-324A;日立化成工業股份有限公司製)/EA/AA之丙烯酸系共聚物(共聚合比率(質量份):50/10/15)進行加成反應者 於氮氣環境的反應容器中,饋入150g之DMEA,使用油浴升溫至80℃。於其中,耗費1小時滴下包含50g之環氧乙烷改性雙酚A二丙烯酸酯FA-324A、20g之EA、15g之AA、0.8g之2,2'-偶氮雙異丁腈及10g之DMEA之混合物。滴下結束後,進一步進行6小時聚合反應。其後,添加1g之氫醌單甲醚,停止聚合反應。接著,耗費0.5小時滴下包含5g之GMA、1g之氯化三乙基苄銨及10g之DMEA之混合物。滴下結束後,進一步進行2小時加成反應。藉由利用甲醇純化所得到之反應溶液而去除未反應雜質,進一步真空乾燥24小時,藉此得到丙烯酸系共聚物(B-2)。所得到之丙烯酸系共聚物(B-2)的酸價為96mgKOH/g。(Synthesis example 2) Make 5 parts by mass of GMA and ethylene oxide modified bisphenol A diacrylate (FA-324A; manufactured by Hitachi Chemical Co., Ltd.)/EA/AA acrylic copolymer (copolymerization ratio (parts by mass): 50/10/15) Addition responders In a reaction vessel in a nitrogen atmosphere, 150g of DMEA was fed, and the temperature was raised to 80°C using an oil bath. In it, it took 1 hour to drop 50g of ethylene oxide modified bisphenol A diacrylate FA-324A, 20g of EA, 15g of AA, 0.8g of 2,2'-azobisisobutyronitrile and 10g The mixture of DMEA. After the dropping, the polymerization reaction was further carried out for 6 hours. After that, 1 g of hydroquinone monomethyl ether was added to stop the polymerization reaction. Then, it took 0.5 hour to drop a mixture containing 5 g of GMA, 1 g of triethylbenzylammonium chloride, and 10 g of DMEA. After completion of the dropping, the addition reaction was further carried out for 2 hours. Unreacted impurities were removed by purifying the obtained reaction solution with methanol, and it was further vacuum dried for 24 hours, thereby obtaining an acrylic copolymer (B-2). The acid value of the obtained acrylic copolymer (B-2) was 96 mgKOH/g.

(合成例3) EA/2-EHMA/BA/N-羥甲基丙烯醯胺/AA之丙烯酸系共聚物(共聚合比率(質量份):20/40/20/5/15) 於氮氣環境的反應容器中,饋入150g之DMEA,使用油浴升溫至80℃。於其中,耗費1小時滴下包含20g之EA、40g之2-EHMA、20g之BA、5g之N-羥甲基丙烯醯胺、15g之AA、0.8g之2,2'-偶氮雙異丁腈及10g之DMEA之混合物。滴下結束後,進一步進行6小時聚合反應。其後,添加1g之氫醌單甲醚,停止聚合反應。藉由利用甲醇純化所得到之反應溶液而去除未反應雜質,進一步真空乾燥24小時,藉此得到丙烯酸系共聚物(B-3)。所得到之丙烯酸系共聚物(B-3)的酸價為103mgKOH/g。(Synthesis example 3) Acrylic copolymer of EA/2-EHMA/BA/N-methylol acrylamide/AA (copolymerization ratio (parts by mass): 20/40/20/5/15) In a reaction vessel in a nitrogen atmosphere, 150g of DMEA was fed, and the temperature was raised to 80°C using an oil bath. Among them, it took 1 hour to drop the components containing 20g of EA, 40g of 2-EHMA, 20g of BA, 5g of N-hydroxymethacrylamide, 15g of AA, 0.8g of 2,2'-azobisisobutyl Mixture of nitrile and 10g of DMEA. After the dropping, the polymerization reaction was further carried out for 6 hours. After that, 1 g of hydroquinone monomethyl ether was added to stop the polymerization reaction. Unreacted impurities were removed by purifying the obtained reaction solution with methanol, and it was further vacuum-dried for 24 hours, thereby obtaining an acrylic copolymer (B-3). The acid value of the obtained acrylic copolymer (B-3) was 103 mgKOH/g.

[光聚合起始劑(d)] “IRGACURE(註冊商標)”OXE01(商品名、BASF Japan(股)製、肟系化合物)(以下,稱為OXE01)。[Photopolymerization initiator (d)] "IRGACURE (registered trademark)" OXE01 (trade name, manufactured by BASF Japan Co., Ltd., oxime-based compound) (hereinafter referred to as OXE01).

[溶劑] DMEA(東京化成工業股份有限公司製) 各實施例及比較例之評價方法如下所示。[Solvent] DMEA (manufactured by Tokyo Chemical Industry Co., Ltd.) The evaluation method of each example and comparative example is as follows.

<pKa之測定> 使將表1中記載之酸調整成0.01mol/L之酸性水溶液保持在25℃的液溫,並使用pKa分析裝置(Sirius-T3;Pion公司製)測定酸的pKa。<Measurement of pKa> The acidic aqueous solution adjusted to the acid described in Table 1 to 0.01 mol/L was maintained at a liquid temperature of 25°C, and the pKa of the acid was measured using a pKa analyzer (Sirius-T3; manufactured by Pion).

將包含構成鹽之陰離子與質子之酸調整成0.01mol/L後,將水溶液保持在25℃的液溫,使用pKa分析裝置(Sirius-T3;Pion公司製)測定構成鹽之陰離子之共軛酸的pKa。構成鹽之陰離子之共軛酸的pKa為-2以下的情形下,可參照「David A. Evans、[online]、網際網路<URL:http://evans.rc.fas.harvard.edu/pdf/evans_pKa_table.pdf>」。After adjusting the acid containing the anion and proton constituting the salt to 0.01 mol/L, the aqueous solution was maintained at a liquid temperature of 25°C, and the conjugate acid of the anion constituting the salt was measured using a pKa analyzer (Sirius-T3; manufactured by Pion) PKa. When the pKa of the conjugate acid constituting the anion of the salt is below -2, please refer to "David A. Evans, [online], Internet <URL: http://evans.rc.fas.harvard.edu/ pdf/evans_pKa_table.pdf>".

<pH之測定> 將表1中記載之酸性水溶液保持在25℃的液溫,並使用pH計(F-71;堀場製作所股份有限公司製)測定酸性水溶液之pH。<Measurement of pH> The acidic aqueous solution described in Table 1 was maintained at a liquid temperature of 25°C, and the pH of the acidic aqueous solution was measured using a pH meter (F-71; manufactured by Horiba Manufacturing Co., Ltd.).

<圖案化性之評價> 以光學顯微鏡觀察於各實施例及比較例所得到的圖案化性之評價用之試樣,確認線與間距(line and space)(以下,有記載為「L/S」。)之值為最小的導電圖案,分別將其L/S之值為7/7的情形判定為A、為10/10的情形判定為B、為15/15的情形判定為C、無法形成15/15之導電圖案的情形判定為D,其中導電圖案之圖案間沒有殘渣且沒有圖案剝落。圖案化性優異順序為A>B>C>D,表示可微細圖案化。<Evaluation of patternability> Observe the samples for evaluation of patterning properties obtained in each of the Examples and Comparative Examples with an optical microscope, and confirm that the value of line and space (hereinafter, described as "L/S") is the smallest value The conductive pattern of L/S is judged as A when its L/S value is 7/7, B when it is 10/10, C when it is 15/15, and 15/15 conductive pattern cannot be formed The situation of is judged as D, where there is no residue between the patterns of the conductive pattern and no pattern peeling. The order of excellent patternability is A>B>C>D, indicating that fine patterning is possible.

<導電性之評價> 將於各實施例及比較例所得到之導電性之評價用之試樣的各自的端部以電阻計(RM3544;HIOKI製)連接,並測定電阻值,基於以下之數學式(2)算出比電阻率。此外,膜厚係使用如“SURFCOM(註冊商標)”1400(東京精密(股)製)之觸針式段差計測定。更具體而言,係以觸針式段差計(測長:1mm、掃描速度:0.3mm/sec)分別測定隨機選擇的10個位置之膜厚,並求得彼等之平均值而算出。又,線寬係以光學顯微鏡分別觀察隨機選擇的10個位置之線寬,進行影像數據解析,並求得彼等之平均值而算出。 比電阻=電阻值×膜厚×線寬/線長…(2) 表示比電阻越小導電性越優異優。<Evaluation of conductivity> The respective ends of the samples for evaluating the conductivity obtained in the respective examples and comparative examples were connected with a resistance meter (RM3544; manufactured by HIOKI), the resistance value was measured, and the ratio was calculated based on the following formula (2) Resistivity. In addition, the film thickness is measured using a stylus-type step gauge such as "SURFCOM (registered trademark)" 1400 (manufactured by Tokyo Precision Co., Ltd.). More specifically, it is calculated by measuring the film thickness of 10 randomly selected locations with a stylus-type step gauge (length measurement: 1 mm, scanning speed: 0.3 mm/sec), and obtaining their average value. In addition, the line width is calculated by observing the line widths of 10 randomly selected positions with an optical microscope, analyzing the image data, and obtaining their average value. Specific resistance=resistance value×film thickness×line width/line length...(2) It means that the smaller the specific resistance, the better the conductivity.

(實施例1) 於100mL潔淨瓶(clean bottle)中,置入10.0g之丙烯酸系共聚物(B-1)、2.0g之LIGHT ACRYLATE BP-4EA、0.60g之OXE01及9.0g之DMEA,以“Awatori Rentaro”(ARE-310;THINKY股份有限公司製)混合,得到21.6g之樹脂溶液(全部固體含量58.3質量%)。(Example 1) In a 100mL clean bottle, place 10.0g of acrylic copolymer (B-1), 2.0g of LIGHT ACRYLATE BP-4EA, 0.60g of OXE01 and 9.0g of DMEA, with "Awatori Rentaro" ( ARE-310; manufactured by THINKY Co., Ltd.) was mixed to obtain 21.6 g of a resin solution (total solid content 58.3% by mass).

將21.6g之所得到的樹脂溶液及50.4g之銀粒子混合,使用3輥磨機(EXAKT M-50;EXAKT公司製)混練,得到72.0g之導電糊1。21.6 g of the obtained resin solution and 50.4 g of silver particles were mixed and kneaded using a 3-roll mill (EXAKT M-50; manufactured by EXAKT Corporation) to obtain 72.0 g of conductive paste 1.

於厚度50μm的PET薄膜上,以網版印刷法塗布導電糊1使乾燥後之塗布膜厚成為1.5μm,將所得到之塗布膜以80℃之乾燥烘箱乾燥15分鐘。評價以下之圖案化性、導電性。On a PET film with a thickness of 50 μm, the conductive paste 1 was applied by screen printing to make the coating film thickness after drying 1.5 μm, and the obtained coating film was dried in a drying oven at 80° C. for 15 minutes. The following patterning properties and conductivity were evaluated.

圖案化性 以一定的L/S排列之直線群,亦即將透光圖案設為1個單元,透過分別具有L/S之值相異的3種單元的光罩,將乾燥後之塗布膜進行曝光及顯影,分別得到L/S之值相異的3種圖案。其後,使所得到之3種圖案依規定的時間浸漬於表1中記載的酸性水溶液中,藉由以超純水清洗處理將酸沖去,並以空氣切割將水去除,以80℃之乾燥烘箱乾燥3分鐘,分別得到L/S之值相異的3種導電圖案,將此作為圖案化性之評價用之試樣。此外,光罩所具有之各單元的L/S之值設為15/15、10/10、7/7(表示各自線寬(μm)/間隔(μm))。曝光係使用曝光裝置(PEM-6M;UNION光學股份有限公司製),以曝光量300mJ/cm2 (波長365nm換算)進行全線曝光,顯影係將基板於0.20質量%的Na2 CO3 溶液中浸漬30秒後,以超純水施以清洗處理來進行。將關於圖案化性之評價結果顯示於表1。The patterning property is a linear group of a certain L/S arrangement, that is, the light transmission pattern is set to 1 unit, and the dried coating film is processed through a mask with 3 types of units with different L/S values. After exposure and development, 3 patterns with different L/S values were obtained respectively. After that, the three patterns obtained were immersed in the acidic aqueous solution described in Table 1 for a predetermined time, the acid was washed away by ultrapure water, and the water was removed by air cutting. Dry in a drying oven for 3 minutes to obtain 3 kinds of conductive patterns with different values of L/S, which are used as samples for patterning evaluation. In addition, the value of L/S of each unit of the photomask is set to 15/15, 10/10, and 7/7 (representing the respective line width (μm)/interval (μm)). The exposure system uses an exposure device (PEM-6M; manufactured by UNION Optics Co., Ltd.) to perform full-line exposure with an exposure amount of 300mJ/cm 2 (converted to a wavelength of 365 nm). The development system immerses the substrate in a 0.20% by mass Na 2 CO 3 solution After 30 seconds, it was washed with ultrapure water. Table 1 shows the evaluation results regarding patternability.

導電性 透過具有100個如圖1所示之透光圖案100之光罩,將乾燥後之塗布膜曝光及顯影,得到圖案。其後,使所得到之圖案依表1記載之時間浸漬於表1中記載的酸性水溶液中,藉由以超純水清洗處理將酸沖去,並以空氣切割將水去除,以80℃之乾燥烘箱乾燥3分鐘,得到導電性之評價用之試樣。所得到之導電圖案的線寬為0.10mm,線長為80mm。而且,曝光及顯影的條件,係與上述圖案化性之評價用之試樣的製作記載之條件相同。將關於導電性之評價結果顯示於表1。Conductivity Expose and develop the dried coating film through a photomask with 100 light-transmitting patterns 100 as shown in FIG. 1 to obtain patterns. After that, the resulting pattern was immersed in the acidic aqueous solution described in Table 1 for the time described in Table 1, the acid was washed away by ultrapure water washing treatment, and the water was removed by air cutting. Dry in a drying oven for 3 minutes to obtain a sample for evaluation of conductivity. The line width of the obtained conductive pattern was 0.10 mm, and the line length was 80 mm. In addition, the conditions of exposure and development are the same as those described in the preparation of the sample for evaluation of patterning properties. Table 1 shows the evaluation results of conductivity.

(實施例2~24、26) 藉由表1所示之組成的導電糊形成規定之圖案,使用表1所示之酸性水溶液以與實施例1相同的方法製造導電圖案,進行與實施例1相同之評價。將關於圖案化性及導電性之評價結果顯示於表1。(Examples 2-24, 26) A predetermined pattern was formed by the conductive paste of the composition shown in Table 1, and the conductive pattern was manufactured in the same manner as in Example 1 using the acidic aqueous solution shown in Table 1, and the same evaluation as in Example 1 was performed. Table 1 shows the evaluation results of patterning properties and conductivity.

(實施例25) 於100mL潔淨瓶(clean bottle)中,置入12.0g之丙烯酸系共聚物(B-2)、0.60g之OXE01及9.0g之DMEA,以“Awatori Rentaro”(ARE-310;THINKY股份有限公司製)混合,得到21.6g之樹脂溶液(全部固體含量58.3質量%)。(Example 25) Place 12.0g of acrylic copolymer (B-2), 0.60g of OXE01 and 9.0g of DMEA in a 100mL clean bottle, and use "Awatori Rentaro" (ARE-310; manufactured by THINKY Co., Ltd.) ) Mix to obtain 21.6 g of resin solution (total solid content 58.3% by mass).

將21.6g之所得到的樹脂溶液及50.4g之銀粒子混合,使用3輥磨機(EXAKT M-50;EXAKT公司製)混練,得到72.0g之導電糊2。藉由導電糊2形成規定之圖案,使用表1所示之酸性水溶液,以與實施例1相同的方法製造導電圖案,進行與實施例1相同之評價。將關於圖案化性及導電性之評價結果顯示於表1。21.6 g of the obtained resin solution and 50.4 g of silver particles were mixed and kneaded using a 3-roll mill (EXAKT M-50; manufactured by EXAKT Corporation) to obtain 72.0 g of conductive paste 2. A predetermined pattern was formed by the conductive paste 2, and the acidic aqueous solution shown in Table 1 was used to produce a conductive pattern in the same manner as in Example 1, and the same evaluation as in Example 1 was performed. Table 1 shows the evaluation results of patterning properties and conductivity.

(實施例27) 藉由表1所示之組成的導電糊形成規定之圖案,使所得到之圖案依表1所記載之時間浸漬於表1所示之酸性水溶液後,不實施洗淨,而以100℃之乾燥烘箱進行10分鐘熟化。其後,藉由以超純水清洗處理而將酸沖去,並以空氣切割將水去除,以80℃之乾燥烘箱乾燥3分鐘,而製造導電圖案,進行與實施例1相同的評價。將關於圖案化性及導電性之評價結果顯示於表1。(Example 27) The conductive paste with the composition shown in Table 1 was used to form a predetermined pattern, and the resulting pattern was immersed in the acidic aqueous solution shown in Table 1 for the time shown in Table 1, and then dried at 100°C without washing. The oven is cured for 10 minutes. Thereafter, the acid was washed away by washing with ultrapure water, and the water was removed by air cutting, and dried in a drying oven at 80° C. for 3 minutes to produce a conductive pattern, and the same evaluation as in Example 1 was performed. Table 1 shows the evaluation results of patterning properties and conductivity.

(實施例28) 於100mL潔淨瓶(clean bottle)中,置入10.0g之丙烯酸系共聚物(B-1)及8.0g之DMEA,以“Awatori Rentaro”(ARE-310;THINKY股份有限公司製)混合,得到18.0g之樹脂溶液(全部固體含量55.6質量%)。(Example 28) Place 10.0 g of acrylic copolymer (B-1) and 8.0 g of DMEA in a 100 mL clean bottle, and mix with "Awatori Rentaro" (ARE-310; manufactured by THINKY Co., Ltd.) to obtain 18.0 g resin solution (total solid content 55.6% by mass).

將18.0g之所得到的樹脂溶液及90.0g之銀粒子混合,使用3輥磨機(EXAKT M-50;EXAKT公司製)混練,得到108.0g之導電糊3。18.0 g of the obtained resin solution and 90.0 g of silver particles were mixed and kneaded using a 3-roll mill (EXAKT M-50; manufactured by EXAKT Corporation) to obtain 108.0 g of conductive paste 3.

於厚度50μm的PET薄膜上,將導電糊3藉由照相凹版印刷,分別得到L/S之值相異的3種圖案。將所得到之圖案以80℃之乾燥烘箱乾燥15分鐘。其後,使所得到之3種圖案依規定的時間浸漬於表1中記載的酸性水溶液中,藉由以超純水清洗處理將酸沖去,並以空氣切割將水去除,以80℃之乾燥烘箱乾燥3分鐘,分別得到L/S之值相異的3種導電圖案,將此作為圖案化性之評價用之試樣。而且,於照相凹版印刷所使用之凹版所具有之各單元之L/S之值設為15/15、10/10、7/7(表示各自線寬(μm)/間隔(μm))。將關於圖案化性之評價結果顯示於表1。On a PET film with a thickness of 50 μm, the conductive paste 3 was printed by gravure printing to obtain three patterns with different L/S values. The resulting pattern was dried in a drying oven at 80°C for 15 minutes. After that, the three patterns obtained were immersed in the acidic aqueous solution described in Table 1 for a predetermined time, the acid was washed away by ultrapure water, and the water was removed by air cutting. Dry in a drying oven for 3 minutes to obtain 3 kinds of conductive patterns with different values of L/S, which are used as samples for patterning evaluation. In addition, the value of L/S of each unit of the intaglio plate used in gravure printing is set to 15/15, 10/10, and 7/7 (representing the respective line width (μm)/space (μm)). Table 1 shows the evaluation results regarding patternability.

於厚度50μm的PET薄膜上,將導電糊3藉由照相凹版印刷,得到導電性之評價所用之圖案。於照相凹版印刷所使用之凹版具有100個如圖1所示之圖案100。將所得到之圖案以80℃之乾燥烘箱乾燥15分鐘。其後,使所得到之圖案依表1記載之時間浸漬於表1中記載的酸性水溶液中,藉由以超純水清洗處理將酸沖去,並以空氣切割將水去除,以80℃之乾燥烘箱乾燥3分鐘,得到導電性之評價用之試樣。所得到之導電圖案的線寬為0.10mm,線長為80mm。將關於導電性之評價結果顯示於表1。The conductive paste 3 was printed on a PET film with a thickness of 50 μm by gravure printing to obtain a pattern for evaluating the conductivity. The intaglio plate used in gravure printing has 100 patterns 100 as shown in FIG. 1. The resulting pattern was dried in a drying oven at 80°C for 15 minutes. After that, the resulting pattern was immersed in the acidic aqueous solution described in Table 1 for the time described in Table 1, the acid was washed away by ultrapure water washing treatment, and the water was removed by air cutting. Dry in a drying oven for 3 minutes to obtain a sample for evaluation of conductivity. The line width of the obtained conductive pattern was 0.10 mm, and the line length was 80 mm. Table 1 shows the evaluation results of conductivity.

(比較例1、2、6~9) 藉由表2所示之組成的導電糊形成規定之圖案,使用表2所示之酸性水溶液以與實施例1相同的方法製造導電圖案,進行與實施例1相同之評價。將關於圖案化性及導電性之評價結果顯示於表2。(Comparative Examples 1, 2, 6-9) The conductive paste of the composition shown in Table 2 was used to form a predetermined pattern, the acidic aqueous solution shown in Table 2 was used to produce a conductive pattern in the same manner as in Example 1, and the same evaluation as in Example 1 was performed. Table 2 shows the evaluation results of patterning properties and conductivity.

(比較例3) 藉由表2所示之組成的導電糊形成規定之圖案,使所得到之圖案浸漬於25℃之0.2mol/L的鹽酸水溶液1分鐘後,使之浸漬於加溫至70℃之0.2mol/L的檸檬酸水溶液5分鐘,藉由以超純水清洗處理將酸沖去,並以空氣切割將水去除,以80℃之乾燥烘箱乾燥3分鐘,而製造導電圖案,進行與實施例1相同之評價。將關於圖案化性及導電性之評價結果顯示於表2。(Comparative example 3) The conductive paste with the composition shown in Table 2 was used to form a predetermined pattern, the resulting pattern was immersed in a 0.2mol/L hydrochloric acid aqueous solution at 25°C for 1 minute, and then immersed in a 0.2mol/L solution heated to 70°C. The citric acid aqueous solution of L was washed with ultrapure water for 5 minutes, the acid was washed away, and the water was removed by air cutting, and dried in a drying oven at 80°C for 3 minutes to produce a conductive pattern, which was the same as in Example 1. The evaluation. Table 2 shows the evaluation results of patterning properties and conductivity.

(比較例4) 藉由表2所示之組成的導電糊形成規定之圖案,使所得到之圖案浸漬於25℃之0.2mol/L的鹽酸水溶液1分鐘後,使之浸漬於加溫至70℃之0.2mol/L的檸檬酸水溶液10分鐘,藉由以超純水清洗處理將酸沖去,並以空氣切割將水去除,以80℃之乾燥烘箱乾燥3分鐘,而製造導電圖案,進行與實施例1相同之評價。將關於圖案化性及導電性之評價結果顯示於表2。(Comparative Example 4) A conductive paste with the composition shown in Table 2 was used to form a predetermined pattern, the resulting pattern was immersed in a 0.2mol/L hydrochloric acid aqueous solution at 25°C for 1 minute, and then immersed in a 0.2mol/L solution heated to 70°C. The citric acid aqueous solution of L was washed with ultrapure water for 10 minutes, the acid was washed away by air cutting, and the water was removed by air cutting. The conductive pattern was produced by drying in a drying oven at 80°C for 3 minutes, and proceeded as in Example 1. The evaluation. Table 2 shows the evaluation results of patterning properties and conductivity.

(比較例5) 藉由表2所示之組成的導電糊形成規定之圖案,使所得到之圖案浸漬於25℃之1mol/L的鹽酸水溶液1分鐘後,使之浸漬於加溫至70℃之1mol/L的檸檬酸水溶液10分鐘,藉由以超純水清洗處理將酸沖去,並以空氣切割將水去除,以80℃之乾燥烘箱乾燥3分鐘,而製造導電圖案,進行與實施例1相同之評價。將關於圖案化性及導電性之評價結果顯示於表2。(Comparative Example 5) The conductive paste with the composition shown in Table 2 was used to form a predetermined pattern. The resulting pattern was immersed in a 1 mol/L hydrochloric acid aqueous solution at 25°C for 1 minute, and then immersed in a 1 mol/L solution heated to 70°C. The citric acid aqueous solution was washed with ultrapure water for 10 minutes, the acid was washed away by air cutting, and the water was removed by air cutting. The conductive pattern was produced by drying in a drying oven at 80°C for 3 minutes, and the same evaluation as in Example 1 was performed. . Table 2 shows the evaluation results of patterning properties and conductivity.

(比較例10) 藉由表2所示之組成的導電糊形成規定之圖案,不浸漬於酸性水溶液,而將所得到之圖案於100℃以乾燥烘箱熟化1小時,製造導電圖案,進行與實施例1相同之評價。將關於圖案化性及導電性之評價結果顯示於表2。(Comparative Example 10) A conductive paste with the composition shown in Table 2 was used to form a predetermined pattern, without immersing in an acidic aqueous solution, the resulting pattern was cured in a drying oven at 100°C for 1 hour to produce a conductive pattern, and the same evaluation as in Example 1 was performed . Table 2 shows the evaluation results of patterning properties and conductivity.

[表1] 導電糊組成 酸性水溶液處理 評價結果 樹脂(b) 鹽以外的酸 在25℃的pH 浸漬條件 丙烯酸系共聚物 種類 種類 陰離子之共軛酸 在25℃的pKa 濃度 種類 在25℃的pKa 濃度 液溫 處理時間 圖案化性 比電阻 (Ω・cm) 實施例1 B-1 氯化鈉 -8.0 0.1mol/L 檸檬酸 3.1 0.2mol/L 1.9 70℃ 5min A 4.5×10-5 實施例2 B-1 三氟醋酸鈉 0.2 0.1mol/L 檸檬酸 3.1 0.2mol/L 1.9 70℃ 5min A 9.5×10-5 實施例3 B-1 硝酸鈉 -1.4 0.1mol/L 檸檬酸 3.1 0.2mol/L 1.9 70℃ 5min A 8.7×10-5 實施例4 B-1 氯化鎳(II) -8.0 0.1mol/L 檸檬酸 3.1 0.2mol/L 1.9 70℃ 5min A 4.8×10-5 實施例5 B-1 氯化鉀 -8.0 0.1mol/L 檸檬酸 3.1 0.2mol/L 1.9 70℃ 5min A 5.5×10-5 實施例6 B-1 溴化鈉 -9.0 0.1mol/L 檸檬酸 3.1 0.2mol/L 1.9 70℃ 5min A 4.4×10-5 實施例7 B-1 硫酸氫鈉 -3.0 0.1mol/L 1.6 70℃ 5min A 8.2×10-5 實施例8 B-1 碘化鈉 -10.0 0.1mol/L 檸檬酸 3.1 0.2mol/L 1.9 70℃ 5min A 4.3×10-5 實施例9 B-1 氯化鐵(III) -8.0 0.1mol/L 1.8 70℃ 5min A 5.2×10-5 實施例10 B-1 氯化鈉 -8.0 0.02mol/L 檸檬酸 3.1 0.2mol/L 1.9 70℃ 30min A 1.1×10-4 實施例11 B-1 氯化鈉 -8.0 0.05mol/L 檸檬酸 3.1 0.2mol/L 1.9 70℃ 10min A 7.5×10-5 實施例12 B-1 氯化鈉 -8.0 0.2mol/L 檸檬酸 3.1 0.2mol/L 1.9 70℃ 5min A 4.3×10-5 實施例13 B-1 氯化鈉 -8.0 0.5mol/L 檸檬酸 3.1 0.2mol/L 1.9 70℃ 5min A 4.0×10-5 實施例14 B-1 氯化鈉 -8.0 0.1mol/L 檸檬酸 3.1 0.2mol/L 1.9 25℃ 30min A 1.2×10-4 實施例15 B-1 氯化鈉 -8.0 0.1mol/L 檸檬酸 3.1 0.2mol/L 1.9 40℃ 30min A 9.5×10-5 實施例16 B-1 氯化鈉 -8.0 0.1mol/L 檸檬酸 3.1 0.2mol/L 1.9 90℃ 3min A 4.0×10-5 實施例17 B-1 氯化鈉 -8.0 0.1mol/L 磷酸 2.2 0.2mol/L 1.5 70℃ 5min A 5.6×10-5 實施例18 B-1 氯化鈉 -8.0 0.1mol/L 抗壞血酸 4.2 0.2mol/L 2.4 70℃ 5min A 8.7×10-5 實施例19 B-1 氯化鈉 -8.0 0.1mol/L 醋酸 4.8 0.2mol/L 2.7 70℃ 60min A 1.1×10-4 實施例20 B-1 氯化鈉 -8.0 0.1mol/L 三氟醋酸 0.2 0.01mol/L 2.0 70℃ 5min A 8.5×10-5 實施例21 B-1 氯化鈉 -8.0 0.1mol/L 檸檬酸 3.1 0.01mol/L 2.6 70℃ 30min A 1.0×10-4 實施例22 B-1 氯化鈉 -8.0 0.1mol/L 檸檬酸 3.1 0.05mol/L 2.2 70℃ 30min A 8.2×10-4 實施例23 B-1 氯化鈉 -8.0 0.1mol/L 檸檬酸 3.1 0.1mol/L 2.1 70℃ 10min A 6.8×10-5 實施例24 B-1 氯化鈉 -8.0 0.1mol/L 檸檬酸 3.1 0.5mol/L 1.7 70℃ 2min A 4.2×10-5 實施例25 B-2 氯化鈉 -8.0 0.1mol/L 檸檬酸 3.1 0.2mol/L 1.9 70℃ 5min C 6.5×10-5 實施例26 B-3 氯化鈉 -8.0 0.1mol/L 檸檬酸 3.1 0.2mol/L 1.9 70℃ 5min B 6.1×10-5 實施例27 B-1 氯化鈉 -8.0 0.1mol/L 檸檬酸 3.1 0.2mol/L 1.9 25℃ 1min A 6.2×10-5 實施例28 B-1 氯化鈉 -8.0 0.1mol/L 檸檬酸 3.1 0.2mol/L 1.9 70℃ 5min C 2.1×10-5 [Table 1] Conductive paste composition Acidic aqueous solution treatment Evaluation results Resin (b) salt Acid other than salt PH at 25°C Dipping condition Acrylic copolymer species species The pKa of conjugate acid of anion at 25℃ concentration species PKa at 25℃ concentration Liquid temperature Processing time Patternability Specific resistance (Ω・cm) Example 1 B-1 Sodium chloride -8.0 0.1mol/L Citric acid 3.1 0.2mol/L 1.9 70℃ 5min A 4.5×10 -5 Example 2 B-1 Sodium trifluoroacetate 0.2 0.1mol/L Citric acid 3.1 0.2mol/L 1.9 70℃ 5min A 9.5×10 -5 Example 3 B-1 Sodium nitrate -1.4 0.1mol/L Citric acid 3.1 0.2mol/L 1.9 70℃ 5min A 8.7×10 -5 Example 4 B-1 Nickel(II) chloride -8.0 0.1mol/L Citric acid 3.1 0.2mol/L 1.9 70℃ 5min A 4.8×10 -5 Example 5 B-1 Potassium chloride -8.0 0.1mol/L Citric acid 3.1 0.2mol/L 1.9 70℃ 5min A 5.5×10 -5 Example 6 B-1 Sodium bromide -9.0 0.1mol/L Citric acid 3.1 0.2mol/L 1.9 70℃ 5min A 4.4×10 -5 Example 7 B-1 Sodium bisulfate -3.0 0.1mol/L no 1.6 70℃ 5min A 8.2×10 -5 Example 8 B-1 Sodium Iodide -10.0 0.1mol/L Citric acid 3.1 0.2mol/L 1.9 70℃ 5min A 4.3×10 -5 Example 9 B-1 Iron(III) chloride -8.0 0.1mol/L no 1.8 70℃ 5min A 5.2×10 -5 Example 10 B-1 Sodium chloride -8.0 0.02mol/L Citric acid 3.1 0.2mol/L 1.9 70℃ 30min A 1.1×10 -4 Example 11 B-1 Sodium chloride -8.0 0.05mol/L Citric acid 3.1 0.2mol/L 1.9 70℃ 10min A 7.5×10 -5 Example 12 B-1 Sodium chloride -8.0 0.2mol/L Citric acid 3.1 0.2mol/L 1.9 70℃ 5min A 4.3×10 -5 Example 13 B-1 Sodium chloride -8.0 0.5mol/L Citric acid 3.1 0.2mol/L 1.9 70℃ 5min A 4.0×10 -5 Example 14 B-1 Sodium chloride -8.0 0.1mol/L Citric acid 3.1 0.2mol/L 1.9 25℃ 30min A 1.2×10 -4 Example 15 B-1 Sodium chloride -8.0 0.1mol/L Citric acid 3.1 0.2mol/L 1.9 40℃ 30min A 9.5×10 -5 Example 16 B-1 Sodium chloride -8.0 0.1mol/L Citric acid 3.1 0.2mol/L 1.9 90℃ 3min A 4.0×10 -5 Example 17 B-1 Sodium chloride -8.0 0.1mol/L Phosphoric acid 2.2 0.2mol/L 1.5 70℃ 5min A 5.6×10 -5 Example 18 B-1 Sodium chloride -8.0 0.1mol/L ascorbic acid 4.2 0.2mol/L 2.4 70℃ 5min A 8.7×10 -5 Example 19 B-1 Sodium chloride -8.0 0.1mol/L acetic acid 4.8 0.2mol/L 2.7 70℃ 60min A 1.1×10 -4 Example 20 B-1 Sodium chloride -8.0 0.1mol/L Trifluoroacetic acid 0.2 0.01mol/L 2.0 70℃ 5min A 8.5×10 -5 Example 21 B-1 Sodium chloride -8.0 0.1mol/L Citric acid 3.1 0.01mol/L 2.6 70℃ 30min A 1.0×10 -4 Example 22 B-1 Sodium chloride -8.0 0.1mol/L Citric acid 3.1 0.05mol/L 2.2 70℃ 30min A 8.2×10 -4 Example 23 B-1 Sodium chloride -8.0 0.1mol/L Citric acid 3.1 0.1mol/L 2.1 70℃ 10min A 6.8×10 -5 Example 24 B-1 Sodium chloride -8.0 0.1mol/L Citric acid 3.1 0.5mol/L 1.7 70℃ 2min A 4.2×10 -5 Example 25 B-2 Sodium chloride -8.0 0.1mol/L Citric acid 3.1 0.2mol/L 1.9 70℃ 5min C 6.5×10 -5 Example 26 B-3 Sodium chloride -8.0 0.1mol/L Citric acid 3.1 0.2mol/L 1.9 70℃ 5min B 6.1×10 -5 Example 27 B-1 Sodium chloride -8.0 0.1mol/L Citric acid 3.1 0.2mol/L 1.9 25℃ 1min A 6.2×10 -5 Example 28 B-1 Sodium chloride -8.0 0.1mol/L Citric acid 3.1 0.2mol/L 1.9 70℃ 5min C 2.1×10 -5

[表2] 導電糊組成 酸性水溶液處理 評價結果 導電性粒子(a) <Ag> 鹽以外的酸 在25℃的pH 浸漬條件 導電圖案中所佔 之比例(質量%) 種類 陰離子之共軛酸 在25℃的pKa 濃度 種類 在25℃的pKa 濃度 液溫 處理時間 圖案化性 比電阻 (Ω・cm) 比較例1 80 無鹽 檸檬酸 3.1 0.2mol/L 1.9 70℃ 5min A 無法測定 比較例2 80 無鹽 檸檬酸 3.1 0.2mol/L 1.9 70℃ 30min A 無法測定 比較例3 80 無鹽 鹽酸 檸檬酸 -8.0 3.1 0.2mol/L 0.2mol/L 0.7 1.9 25℃ 70℃ 1min 5min A 5.3×10-4 比較例4 80 無鹽 鹽酸 檸檬酸 -8.0 3.1 0.2mol/L 0.2mol/L 0.7 1.9 25℃ 70℃ 1min 10min A 4.6×10-4 比較例5 80 無鹽 鹽酸 檸檬酸 -8.0 3.1 1mol/L 1mol/L 0.0 1.6 25℃ 70℃ 1min 10min A 1.2×10-3 比較例6 80 氯化鈉 -8.0 0.1mol/L 無酸 7 70℃ 5min A 8.5×10-2 比較例7 80 氯化鈉 -8.0 0.1mol/L 醋酸 4.8 0.002mol/L 3.8 70℃ 60min A 1.2×10-3 比較例8 80 氯化鈉 -8.0 0.1mol/L 鹽酸 -8.0 1mol/L 0.0 70℃ 5min A 1.0×10-3 比較例9 80 磷酸二氫鈉 2.2 0.1mol/L 檸檬酸 3.1 0.2mol/L 2.0 70℃ 60min A 無法測定 比較例10 80 無鹽及酸,於100℃於大氣中熱處理60min A 無法測定 [Table 2] Conductive paste composition Acidic aqueous solution treatment Evaluation results Conductive particles (a) <Ag> salt Acid other than salt PH at 25°C Dipping condition Proportion in the conductive pattern (mass%) species The pKa of conjugate acid of anion at 25℃ concentration species PKa at 25℃ concentration Liquid temperature Processing time Patternability Specific resistance (Ω・cm) Comparative example 1 80 No salt Citric acid 3.1 0.2mol/L 1.9 70℃ 5min A Unable to determine Comparative example 2 80 No salt Citric acid 3.1 0.2mol/L 1.9 70℃ 30min A Unable to determine Comparative example 3 80 No salt Citric acid hydrochloride -8.0 3.1 0.2mol/L 0.2mol/L 0.7 1.9 25℃ 70℃ 1min 5min A 5.3×10 -4 Comparative example 4 80 No salt Citric acid hydrochloride -8.0 3.1 0.2mol/L 0.2mol/L 0.7 1.9 25℃ 70℃ 1min 10min A 4.6×10 -4 Comparative example 5 80 No salt Citric acid hydrochloride -8.0 3.1 1mol/L 1mol/L 0.0 1.6 25℃ 70℃ 1min 10min A 1.2×10 -3 Comparative example 6 80 Sodium chloride -8.0 0.1mol/L Acid free 7 70℃ 5min A 8.5×10 -2 Comparative example 7 80 Sodium chloride -8.0 0.1mol/L acetic acid 4.8 0.002mol/L 3.8 70℃ 60min A 1.2×10 -3 Comparative example 8 80 Sodium chloride -8.0 0.1mol/L hydrochloric acid -8.0 1mol/L 0.0 70℃ 5min A 1.0×10 -3 Comparative example 9 80 Sodium dihydrogen phosphate 2.2 0.1mol/L Citric acid 3.1 0.2mol/L 2.0 70℃ 60min A Unable to determine Comparative example 10 80 No salt and acid, heat treatment in air at 100℃ for 60min A Unable to determine

100:透光圖案100: light transmission pattern

圖1在實施例中之導電性之評價中所使用的光罩之透光圖案的示意圖。FIG. 1 is a schematic diagram of the light transmission pattern of the photomask used in the evaluation of the conductivity in the embodiment.

無。no.

Claims (8)

一種導電圖案之製造方法,其具有: (1)於基材上形成圖案之步驟,該圖案包含導電性粒子(a)、樹脂(b);及 (2)使所形成的圖案與在25℃的pH為1.2~3.5的酸性水溶液接觸之步驟,該酸性水溶液包含至少一種在25℃的陰離子之共軛酸的酸解離常數(pKa)為1.0以下的鹽。A manufacturing method of conductive pattern, which has: (1) A step of forming a pattern on a substrate, the pattern including conductive particles (a) and resin (b); and (2) The step of contacting the formed pattern with an acidic aqueous solution with a pH of 1.2 to 3.5 at 25°C, the acidic aqueous solution containing at least one anion at 25°C, and the acid dissociation constant (pKa) of the conjugate acid is 1.0 or less Of salt. 如請求項1之導電圖案之製造方法,其中前述酸性水溶液中所含之鹽的濃度為0.05mol/L以上。The method for manufacturing a conductive pattern according to claim 1, wherein the concentration of the salt contained in the acidic aqueous solution is 0.05 mol/L or more. 如請求項1或2之導電圖案之製造方法,其中前述酸性水溶液中,含有前述鹽以外的酸,該酸的pKa為2~5。The method for producing a conductive pattern according to claim 1 or 2, wherein the acidic aqueous solution contains an acid other than the salt, and the acid has a pKa of 2-5. 如請求項1至3中任一項之導電圖案之製造方法,其中前述酸性水溶液的液溫為40℃~90℃。The method for manufacturing a conductive pattern according to any one of claims 1 to 3, wherein the liquid temperature of the acidic aqueous solution is 40°C to 90°C. 如請求項1至4中任一項之導電圖案之製造方法,其係在前述圖案與前述酸性水溶液接觸的狀態下加熱。The method for manufacturing a conductive pattern according to any one of claims 1 to 4, which is heated in a state where the pattern is in contact with the acidic aqueous solution. 如請求項1至5中任一項之導電圖案之製造方法,其中前述(1)之形成圖案之步驟,係藉由於基材上塗布感光性糊而形成塗布膜,並藉由將該塗布膜曝光及顯影而形成圖案之光蝕刻步驟,其中該感光性糊含有:導電性粒子(a)、含有羧基之樹脂(B)、具有不飽和雙鍵之反應性單體(c)及光聚合起始劑(d)。The method for manufacturing a conductive pattern according to any one of claims 1 to 5, wherein the step of forming the pattern in (1) is to form a coating film by coating a photosensitive paste on a substrate, and by forming the coating film Exposure and development to form a patterned photoetching step, wherein the photosensitive paste contains: conductive particles (a), carboxyl-containing resin (B), reactive monomers with unsaturated double bonds (c), and photopolymerization Starter (d). 如請求項1至6中任一項之導電圖案之製造方法,其中前述導電性粒子(a)含有銀粒子。The method for manufacturing a conductive pattern according to any one of claims 1 to 6, wherein the conductive particles (a) contain silver particles. 如請求項1至7中任一項之導電圖案之製造方法,其中前述導電圖案的厚度為3μm以下。The method for manufacturing a conductive pattern according to any one of claims 1 to 7, wherein the thickness of the conductive pattern is 3 μm or less.
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