TW202043147A - 矽微粒子的製造方法 - Google Patents

矽微粒子的製造方法 Download PDF

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Publication number
TW202043147A
TW202043147A TW109112644A TW109112644A TW202043147A TW 202043147 A TW202043147 A TW 202043147A TW 109112644 A TW109112644 A TW 109112644A TW 109112644 A TW109112644 A TW 109112644A TW 202043147 A TW202043147 A TW 202043147A
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TW
Taiwan
Prior art keywords
silicon
heating zone
temperature
particles
gas
Prior art date
Application number
TW109112644A
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English (en)
Chinese (zh)
Inventor
望月直人
石田晴之
福原浩二
Original Assignee
日商德山股份有限公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 日商德山股份有限公司 filed Critical 日商德山股份有限公司
Publication of TW202043147A publication Critical patent/TW202043147A/zh

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    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B33/00—Silicon; Compounds thereof
    • C01B33/02—Silicon
    • C01B33/021—Preparation
    • C01B33/027—Preparation by decomposition or reduction of gaseous or vaporised silicon compounds other than silica or silica-containing material
    • C01B33/03—Preparation by decomposition or reduction of gaseous or vaporised silicon compounds other than silica or silica-containing material by decomposition of silicon halides or halosilanes or reduction thereof with hydrogen as the only reducing agent
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/24—Deposition of silicon only
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01M—PROCESSES OR MEANS, e.g. BATTERIES, FOR THE DIRECT CONVERSION OF CHEMICAL ENERGY INTO ELECTRICAL ENERGY
    • H01M4/00—Electrodes
    • H01M4/02—Electrodes composed of, or comprising, active material
    • H01M4/36—Selection of substances as active materials, active masses, active liquids
    • H01M4/38—Selection of substances as active materials, active masses, active liquids of elements or alloys
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E60/00—Enabling technologies; Technologies with a potential or indirect contribution to GHG emissions mitigation
    • Y02E60/10—Energy storage using batteries
TW109112644A 2019-04-18 2020-04-15 矽微粒子的製造方法 TW202043147A (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2019-079188 2019-04-18
JP2019079188 2019-04-18

Publications (1)

Publication Number Publication Date
TW202043147A true TW202043147A (zh) 2020-12-01

Family

ID=72837834

Family Applications (1)

Application Number Title Priority Date Filing Date
TW109112644A TW202043147A (zh) 2019-04-18 2020-04-15 矽微粒子的製造方法

Country Status (3)

Country Link
JP (1) JPWO2020213472A1 (ja)
TW (1) TW202043147A (ja)
WO (1) WO2020213472A1 (ja)

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0230611A (ja) * 1988-07-21 1990-02-01 Nkk Corp 多結晶シリコンの製造方法及び装置
JPH02233514A (ja) * 1989-03-06 1990-09-17 Osaka Titanium Co Ltd 多結晶シリコンの製造方法
JPH0694367B2 (ja) * 1990-01-19 1994-11-24 大阪チタニウム製造株式会社 多結晶シリコンの製造方法
EP1786730A2 (en) * 2004-07-16 2007-05-23 Institutt For Energiteknikk Method and reactor for continuous production of semiconductor grade silicon
DE102007021003A1 (de) * 2007-05-04 2008-11-06 Wacker Chemie Ag Verfahren zur kontinuierlichen Herstellung von polykristallinem hochreinen Siliciumgranulat
JP5321314B2 (ja) * 2009-07-23 2013-10-23 三菱マテリアル株式会社 クロロシラン重合物の分解方法および分解装置

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Publication number Publication date
WO2020213472A1 (ja) 2020-10-22
JPWO2020213472A1 (ja) 2020-10-22

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