TW202042300A - Substrate processing device and substrate processing method that can suppress the reduction in the size of the substrate - Google Patents

Substrate processing device and substrate processing method that can suppress the reduction in the size of the substrate Download PDF

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TW202042300A
TW202042300A TW109108324A TW109108324A TW202042300A TW 202042300 A TW202042300 A TW 202042300A TW 109108324 A TW109108324 A TW 109108324A TW 109108324 A TW109108324 A TW 109108324A TW 202042300 A TW202042300 A TW 202042300A
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substrate
thermoplastic resin
outer peripheral
supply nozzle
stage
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TWI733370B (en
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根本悠平
林航之介
長嶋裕次
秋本紗希
松下淳
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日商芝浦機械電子裝置股份有限公司
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/6715—Apparatus for applying a liquid, a resin, an ink or the like
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H01L21/67063—Apparatus for fluid treatment for etching
    • H01L21/67075—Apparatus for fluid treatment for etching for wet etching
    • H01L21/6708—Apparatus for fluid treatment for etching for wet etching using mainly spraying means, e.g. nozzles
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67098—Apparatus for thermal treatment

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  • Condensed Matter Physics & Semiconductors (AREA)
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Abstract

The present invention provides a substrate processing device and a substrate processing method that can suppress the reduction in the size of the substrate. The substrate processing device (10) of the embodiment has: a stage (30) that supports a substrate (W) to be etched; and a supply nozzle (52) moving relative to the stage (30) supported by the substrate (W) and supplying softened thermoplastic resin to an outer peripheral end (A1) of the substrate (W) supported by the stage (30); and a heating part (60), which heats the thermoplastic resin supplied to the outer peripheral end (A1) of the substrate (W) by the supply nozzle (52).

Description

基板處理裝置及基板處理方法Substrate processing device and substrate processing method

本發明之實施形態，係有關於基板處理裝置及基板處理方法。The embodiment of the present invention relates to a substrate processing apparatus and a substrate processing method.

基板處理裝置，係被使用於半導體或液晶面板等之製造工程中，基於均一性以及再現性之理由，係廣泛使用有將基板1枚1枚地藉由專用之處理室來進行處理的單片方式之基板處理裝置。例如，在半導體之製造工程中，係存在有層積記憶體元件製造工程，但是，作為在該製造工程中之層積矽晶圓之薄化工程，係存在有將基板之元件層上之Si層以蝕刻液來薄化的蝕刻工程，在此蝕刻工程中，係使用有單片方式之基板處理裝置。 在前述之蝕刻工程中，蝕刻液係被供給至基板之中央附近處，並藉由基板旋轉之離心力而從基板之外周流落。此時，基板之外周面(基板之外周的端面)也會被蝕刻液所侵蝕，並會有基板之直徑變短或基板尺寸變小的情形(基板尺寸之縮小)。若是發生此基板尺寸之縮小，則係成為無法在基板之外周部分處得到所期望之尺寸的元件晶片，而發生有元件晶片之損失(能夠從1枚之基板所得到的所期望之尺寸之元件晶片數量的減少)。又，在後續工程中之由機器人所致之搬送等之中，由於係以基板尺寸作為基準而進行有搬送裝置之設計和設定，因此，若是基板尺寸成為較容許值而更小，則在後續工程中之基板搬送係成為無法進行。Substrate processing equipment is used in the manufacturing process of semiconductors, liquid crystal panels, etc. For reasons of uniformity and reproducibility, it is widely used to process substrates one by one in a dedicated processing chamber. Method of substrate processing equipment. For example, in the manufacturing process of semiconductors, there is a manufacturing process of laminated memory devices. However, as the thinning process of a laminated silicon wafer in this manufacturing process, there is a process of removing Si on the element layer of the substrate. An etching process in which the layer is thinned with an etching solution. In this etching process, a single-chip substrate processing device is used. In the aforementioned etching process, the etching liquid is supplied to the vicinity of the center of the substrate, and flows from the outer periphery of the substrate by the centrifugal force of the rotation of the substrate. At this time, the outer circumference of the substrate (the end surface of the outer circumference of the substrate) will also be corroded by the etching solution, and the diameter of the substrate may be shortened or the size of the substrate may be reduced (substrate size reduction). If this reduction in the size of the substrate occurs, the device chip of the desired size cannot be obtained at the outer periphery of the substrate, and the loss of the device chip occurs (the device of the desired size can be obtained from a single substrate Decrease in the number of wafers). In addition, in the transfer by robots in the subsequent process, the design and setting of the transfer device are based on the substrate size. Therefore, if the substrate size becomes smaller than the allowable value, the subsequent The substrate transportation system in the process became impossible.

本發明所欲解決之課題，係在於提供一種能夠對於基板尺寸之縮小作抑制的基板處理裝置及基板處理方法。 本發明之實施形態之基板處理裝置，係具備有：台，係支持成為蝕刻對象之基板；和供給噴嘴，係相對於藉由前述台而被作支持的前述基板，而進行相對移動，並將軟化了的熱可塑性樹脂，供給至藉由前述台而被作支持的前述基板之外周端部處；和加熱部，係對於藉由前述供給噴嘴而被供給至了前述基板之外周端部處的熱可塑性樹脂進行加熱。 本發明之實施形態之基板處理方法，係具備有：藉由台而支持成為蝕刻對象之基板之工程；和相對於藉由前述台而被作支持的前述基板而使供給噴嘴進行相對移動，並藉由前述供給噴嘴來將軟化了的前述熱可塑性樹脂供給至藉由前述台而被作支持的前述基板之外周端部處之工程；和將藉由前述供給噴嘴而被供給至了前述基板之外周端部處之前述熱可塑性樹脂，藉由加熱部來進行加熱之工程。 若依據本發明之實施形態，則係能夠對於基板尺寸之縮小作抑制。The problem to be solved by the present invention is to provide a substrate processing apparatus and a substrate processing method that can suppress the reduction in the size of the substrate. The substrate processing apparatus of the embodiment of the present invention is provided with: a table which supports a substrate to be an etching target; and a supply nozzle which moves relative to the substrate supported by the table and moves The softened thermoplastic resin is supplied to the outer peripheral end of the substrate supported by the stage; and the heating part is for the outer peripheral end of the substrate supplied by the supply nozzle The thermoplastic resin is heated. The substrate processing method of the embodiment of the present invention includes: a process of supporting a substrate to be an etching target by a table; and relatively moving a supply nozzle with respect to the substrate supported by the table, and The process of supplying the softened thermoplastic resin to the outer peripheral end of the substrate supported by the stage by the supply nozzle; and the process of supplying the substrate to the substrate by the supply nozzle The aforementioned thermoplastic resin at the outer peripheral end is heated by the heating part. According to the embodiment of the present invention, the reduction in the size of the substrate can be suppressed.

〈第1實施形態〉 參考圖1~圖10，針對第1實施形態作說明。 (基本構成) 如同圖1中所示一般，第1實施形態之基板處理裝置10，係具備有處理室20、和台30、和旋轉機構40、和樹脂供給部50、和加熱部60、以及控制部70。 處理室20，係為用以對於具備有被處理面Wa之基板W進行處理的處理盒。此處理室20，例如，係被形成為箱形狀，並收容台30、旋轉機構40之一部分、樹脂供給部50之一部分、加熱部60等。作為基板W，例如，係使用有晶圓或液晶基板。此基板W，係成為蝕刻處理之對象、亦即是成為蝕刻對象。 在前述之處理室20之上面處，係被設置有清淨單元21。此清淨單元21，例如，係具備有HEPA濾網等之濾網和風扇(均未圖示)，並將從基板處理裝置10所被作設置的清淨室的頂面所下吹的下吹流淨化而導入至處理室20內，以在處理室20內產生從上方而流動至下方的氣流。清淨單元21，係被與控制部70作電性連接，其之驅動係被控制部70所控制。 台30，係被定位在處理室20內之中央附近處，並被水平地設置在旋轉機構40上，而成為能夠在水平面內旋轉。此台30，例如，係被稱作旋轉台(spin table)。基板W之被處理面Wa之中心，係被定位於台30之旋轉軸上。台30，例如，係將被載置於其之上面處的基板W作吸附並作保持(吸附保持)。 旋轉機構40，係支持台30，並構成為使該台30在水平面內作旋轉。例如，旋轉機構40，係具備有被與台30之中央作了連結的旋轉軸、和使該旋轉軸旋轉的馬達(均未圖示)。此旋轉機構40，係藉由馬達之驅動而經由旋轉軸來使台30旋轉。旋轉機構40，係被與控制部70作電性連接，其之驅動係被控制部70所控制。 樹脂供給部50，係具備有儲存單元51、和供給噴嘴52、以及噴嘴移動機構53。此樹脂供給部50，係藉由噴嘴移動機構53來使供給噴嘴52移動並定位於台30上之基板W之外周端部A1之上方處，並從儲存單元51來對於供給噴嘴52而送出軟化狀態之熱可塑性樹脂，並且從供給噴嘴52來對於台30上之基板W之外周端部A1供給軟化狀態之熱可塑性樹脂。另外，針對基板W之外周端部A1之詳細內容，係於後再述。 於此，作為熱可塑性樹脂，例如，係使用有PVA(聚乙烯醇)、EVA(乙烯醋酸乙烯酯共聚物)、胺基甲酸乙酯系樹脂。此熱可塑性樹脂，係相對於在蝕刻工程中所使用之蝕刻液而具備有難溶性、亦即是具備有耐性，而作為保護基板W免於受到蝕刻液之影響的保護材而起作用。熱可塑性樹脂，例如，若是其之溫度成為150℃以上則會軟化，若是成為較150℃更低則會硬化。硬化狀態，係亦可為凝膠狀。 儲存單元51，係具備有槽51a、和開閉閥51b、以及幫浦51c。槽51a，係具備有加熱器51a1，並藉由加熱器51a1來將熱可塑性樹脂加熱而儲存軟化狀態之熱可塑性樹脂。加熱器51a1，係作為藉由熱而使熱可塑性樹脂軟化之加熱部而起作用。槽51a，係經由供給管51a2而被與供給噴嘴52作連接。開閉閥51b以及幫浦51c，係被設置在供給管51a2之路徑的途中。電磁閥等之開閉閥51b，係對於在供給管51a2中而流動的軟化狀態之熱可塑性樹脂之流通(供給量和供給時序等)作控制，幫浦51c係身為用以將槽51a內之軟化狀態之熱可塑性樹脂送至供給噴嘴52處的驅動源。開閉閥51b以及幫浦51c、加熱器51a1等之加熱部，係被與控制部70作電性連接，其之驅動係被控制部70所控制。另外，較理想，在供給管51a2之外周壁處，亦係設置有沿著供給管51a2之延伸路徑而延伸的加熱器(未圖示)。於此情況，該加熱器，亦係作為藉由熱而使熱可塑性樹脂軟化之加熱部而起作用，而維持在供給管51a2中流動的熱可塑性樹脂之軟化狀態。 供給噴嘴52，係被形成為能夠藉由噴嘴移動機構53來在台30之上方處沿著台30上之基板W之被處理面Wa而於水平方向上搖動，又，係被形成為能夠在鉛直方向上移動。此供給噴嘴52，係與台30上之基板W之外周端部A1相對向，並將從槽51a而經由供給管51a2所作了供給的軟化狀態之熱可塑性樹脂，朝向台30上之基板W之外周端部A1作供給。作為供給噴嘴52，例如係使用有分配器。又，供給噴嘴52，係具備有加熱器52a。此加熱器52a，係作為藉由熱而使熱可塑性樹脂軟化之加熱部而起作用，而維持在供給噴嘴52中流動的熱可塑性樹脂之軟化狀態。加熱器52a，係被與控制部70作電性連接，其之驅動係被控制部70所控制。 噴嘴移動機構53，係具備有可動臂53a、和臂移動機構53b。可動臂53a，係藉由臂移動機構53b而被水平地作支持，並於其中一端處保持供給噴嘴52。臂移動機構53b，係將可動臂53a處之與供給噴嘴52相反側之一端作保持，並使該可動臂53a沿著台30上之基板W之被處理面Wa而於水平方向上搖動，並使其在鉛直方向上作升降。此臂移動機構53b，係被與控制部70作電性連接，其之驅動係被控制部70所控制。 例如，噴嘴移動機構53，係使供給噴嘴52，在「台30上之基板W之外周端部A1之正上方之供給位置」與「從台30之上方避開而成為能夠進行基板W之搬入和搬出之待機位置」之間作移動。另外，圖1中所示之供給噴嘴52，係位置於供給位置。 加熱部60，係以不會對於台30之旋轉動作造成妨礙的方式，而被設置在台30之周圍。此加熱部60，係為了使相對於基板W之熱可塑性樹脂之密著性提升，而對於被塗布在基板W之外周端部A1處的熱可塑性樹脂以非接觸來進行加熱。作為加熱部60，係使用有藉由熱風來進行加熱之加熱器、或者是藉由輻射熱來進行加熱之加熱器等。此加熱部60，係被與控制部70作電性連接，其之驅動係被控制部70所控制。圖示中，係對於由熱風所致之加熱器作展示。 控制部70，係具備有對於各部作集中性控制之微電腦、和將關連於基板處理之基板處理資訊和各種程式等作記憶之記憶部(均未圖示)。此控制部70，係基於基板處理資訊和各種程式，而進行對於由旋轉機構40所致之台30之旋轉動作、由樹脂供給部50所致之熱可塑性樹脂之供給動作、由加熱部60所致之加熱動作等的控制(亦包含關連於控制之各種處理)。 於此，如同圖2中所示一般，基板W之外周端部A1，係藉由基板W之上面(被處理面Wa)之外周區域A1a、和基板W之外周面(基板W之外周之端面)A1b、以及基板W之下面之外周區域A1c，而構成之。又，如同圖2以及圖3中所示一般，在基板W之上面處，係存在有在蝕刻處理工程中而成為蝕刻處理之對象的蝕刻對象區域R1。蝕刻對象區域R1，係身為將基板W之上面之外周區域A1a去除後的基板W之上面之區域。此蝕刻對象區域R1以外之區域，係身為在蝕刻處理工程中而並非為蝕刻處理之對象的非蝕刻對象區域。在圖3中，蝕刻對象區域R1係為圓狀之區域，基板W之上面之外周區域A1a、基板W之下面之外周區域A1c (參照圖2)，係分別身為從基板W之外周起朝向內側(基板W之中心側)而具備有數mm(例如4mm以下)的特定寬幅之圓環狀之區域。 例如，供給噴嘴52，係如同圖2中所示一般，位置於台30上之基板W之外周面A1b的正上方處，並對於該外周面A1b之上部而供給軟化狀態之熱可塑性樹脂B1。另外，軟化狀態之熱可塑性樹脂B1，由於係具備有所期望之黏性，因此，被供給至基板W之外周面A1b之上部處的熱可塑性樹脂B1，係以覆蓋基板W之外周面A1b的方式而逐漸朝向下方擴廣。熱可塑性樹脂B1，係若是被從供給噴嘴52而吐出，則會從表層起而逐漸地硬化，若是附著於基板W上，則熱可塑性樹脂B1之溫度係急遽地降低，附著於基板W上的部分之熱可塑性樹脂係急速地硬化。台30上之基板W之溫度，係起因於處理室20內之氣流(例如，從上方而流動至下方之氣流)而有所降低。因此，若是從供給噴嘴52所吐出的熱可塑性樹脂B1附著於基板W上，則熱可塑性樹脂B1之溫度係會有急遽地降低的傾向。 於此樹脂之供給時，由於台30係藉由旋轉機構40而作旋轉，因此，台30上之基板W亦係身為旋轉之狀態。因此，從供給噴嘴52所吐出的熱可塑性樹脂B1，係因應於基板W之旋轉而沿著基板W之外周面A1b來依序附著。藉由此，如同圖3中所示一般，在基板W之外周面A1b之全面上，熱可塑性樹脂B1係被作塗布，該基板W之外周面A1b之全面係被熱可塑性樹脂B1所覆蓋(樹脂塗布完成)。而，被塗布在基板W之外周面A1b上的熱可塑性樹脂B1，係起因於溫度之降低而硬化。之後，在台30正在旋轉的狀態下，若是硬化狀態之熱可塑性樹脂B1藉由加熱部60而被加熱，則該熱可塑性樹脂B1係軟化並接著於基板W之外周面A1b上。藉由此，相對於基板W之熱可塑性樹脂B1的密著性係提升。此時，加熱部60，係將被塗布在基板W之外周面A1b上的熱可塑性樹脂B1，從該熱可塑性樹脂B1並未與基板W之外周面A1b相接觸之面側(參照圖2)來瞬間性地(例如數秒)加熱，並使熱可塑性樹脂B1軟化。於此，由加熱部60所致之熱可塑性樹脂B1之加熱溫度，係被限制在會使熱可塑性樹脂B1之黏度被維持於不會使熱可塑性樹脂B1從基板W之外周面A1b而下垂的程度之黏度的溫度以下。另外，雖然熱可塑性樹脂材料的一部分係會成為被浪費掉，但是，就算是成為會使熱可塑性樹脂B1之一部分從基板W之外周面A1b而下垂一般的溫度，只要最終而言能夠在基板W之外周面A1b處塗布所必要之厚度的熱可塑性樹脂B1，則亦可將該加熱溫度作為限制溫度。此限制溫度，係依存於所使用之熱可塑性樹脂B1之種類等而有所相異，並預先實驗性地被求取出來。此完成樹脂塗布之基板W，係藉由具備有機器手等之搬送裝置(未圖示)而被從處理室20搬出，並被搬入至身為與基板處理裝置10相異之個體的蝕刻處理裝置(未圖示)中，並且藉由蝕刻液而被作處理(詳細內容係於後再述)。 另外，在供給噴嘴52為位置於供給位置處的狀態下，供給噴嘴52與台30上之基板W之間的垂直分離距離，係被設定為特定之距離。此特定之距離，係因應於所使用的熱可塑性樹脂B1之種類(在軟化狀態下之黏度)，來與熱可塑性樹脂之供給量和台30之旋轉數等一同地而實驗性地預先求取出來。亦即是，特定之距離和熱可塑性樹脂之供給量以及台30之旋轉數等，係以會使從供給噴嘴52所吐出的熱可塑性樹脂B1僅將基板W之外周面A1b作覆蓋並硬化的方式，而預先有所設定。又，與先前所敘述的由加熱部60所致之加熱溫度相同的，由加熱部60所致之加熱時間，亦係因應於所使用的熱可塑性樹脂B1之種類(在軟化狀態下之黏度)，來以不會使被塗布在基板W之外周面A1b上的熱可塑性樹脂B1軟化並從基板W之外周面A1b下垂、或者是就算會下垂最終而言也能夠在基板W之外周面A1b處塗布所必要之厚度的熱可塑性樹脂B1的方式，來實驗性地預先求取出來並作設定。 (基板處理工程) 接著，針對前述之基板處理裝置10所進行之基板處理工程之流程作說明。在此基板處理工程中，控制部70係對於各部之動作進行控制。 如同圖4中所示一般，在步驟S1中，係藉由機器手而將未處理之基板W搬入至處理室20內並載置於台30上，該被作了載置的基板W係藉由台30而被作吸附保持。機器手，在基板W之載置後，係從處理室20而避開。另外，在基板W之搬入時，供給噴嘴52係位置於待機位置。 若是前述之機器手從處理室20而避開，則在步驟S2中，台30之旋轉係藉由旋轉機構40而被開始，在步驟S3中，軟化狀態之熱可塑性樹脂係被塗布在台30上之基板W之外周端部A1處。具體而言，係藉由以下之處理程序來進行。供給噴嘴52係藉由噴嘴移動機構53而從待機位置來移動至供給位置處。若是供給噴嘴52到達供給位置處，則供給噴嘴52，係位置於台30上之基板W之外周面A1b的正上方處(參照圖2)，若是台30之旋轉數成為特定之旋轉數(例如10rpm)，則係朝向基板W之外周面A1b之上部而吐出軟化狀態之熱可塑性樹脂B1。從供給噴嘴52所吐出的熱可塑性樹脂B1，係因應於基板W之旋轉而沿著基板W之外周面A1b來依序附著。而，例如若是在基板W處之熱可塑性樹脂B1之附著開始點環繞了1周，則在基板W之外周面A1b之全面上，熱可塑性樹脂B1係被作塗布(參照圖3)，台30上之基板W之外周面A1b之全面係被熱可塑性樹脂B1所覆蓋。被塗布在外周面A1b上的熱可塑性樹脂B1之厚度，例如係為0.5~3mm。另外，被塗布在外周面A1b上的熱可塑性樹脂B1，係起因於溫度之降低而成為硬化狀態。 若是此樹脂塗布結束而吐出被停止，則供給噴嘴52係從塗布位置而移動至待機位置處，在步驟S4中，加熱部60之加熱動作係被開始。被塗布在基板W之外周面A1b上的熱可塑性樹脂B1，係藉由加熱部60而被加熱。此加熱，係因應於基板W之旋轉，而涵蓋基板W之外周面A1b之全體地來作特定時間之進行。在經過特定時間後，加熱部60之加熱動作係被停止。藉由此加熱動作，由於被塗布在基板W之外周面A1b處的硬化狀態之熱可塑性樹脂B1係再度軟化，並接著於基板W之外周面A1b處，因此相對於基板W之熱可塑性樹脂B1的密著性係提升。之後，在此使密著性作了提升的狀態下，熱可塑性樹脂B1係硬化(再硬化)。若是此樹脂加熱結束，則在步驟S5中，台30之旋轉係被停止。 若是前述之供給噴嘴52回到待機位置處，台30之旋轉被停止，則在步驟S6中，完成樹脂塗布之基板W，係從台30上藉由前述之機器手(未圖示)而被搬出至處理室20外，並被搬入至蝕刻處理裝置(未圖示)中。之後，藉由蝕刻處理裝置，基板W之被處理面Wa係藉由蝕刻液而被作處理。在蝕刻工程中，蝕刻液係被供給至例如以50rpm而進行旋轉的基板W之被處理面Wa之中央附近處，被作了供給的蝕刻液，係藉由以基板W之旋轉所致之離心力而擴廣至基板W之被處理面Wa之全體。藉由此，在基板W之被處理面Wa上係被形成有蝕刻液之液膜，基板W之被處理面Wa係藉由蝕刻液而被作處理。此時，硬化狀態之熱可塑性樹脂B1，係作為保護基板W之外周面A1b免於受到蝕刻液之影響的保護材而起作用。蝕刻處理後之基板W，係在蝕刻處理裝置內，依序被進行使用有洗淨液之洗淨處理、由使基板W進行高速旋轉一事所致的乾燥處理。 在此種基板處理工程中，軟化狀態之熱可塑性樹脂B1係被塗布在台30上之基板W之身為外周端部A1之一部分的外周面A1b上，該外周面A1b之全面係被硬化狀態之熱可塑性樹脂B1所覆蓋。藉由此，在身為後續工程之蝕刻工程中，由於硬化狀態之熱可塑性樹脂B1係作為保護基板W之外周面A1b免於受到蝕刻液之影響的保護材而起作用，因此，基板W之外周面A1b被蝕刻液所侵蝕的情形係被作抑制，而能夠對於基板W之直徑變小、亦即是基板尺寸縮小的情形作抑制。其結果，由於係成為就算是在基板W之外周部分處也能夠得到所期望之尺寸的元件晶片，因此係能夠對於元件晶片之損失的發生作抑制。又，係成為能夠進行像是後續工程中之由機器人所致之搬送等的後續工程中之基板搬送，而能夠使良率提升。 於此，從供給噴嘴52而被吐出了的熱可塑性樹脂B1，係從表層起而逐漸地開始硬化，又，若是從供給噴嘴52所吐出了的熱可塑性樹脂B1附著於基板W上，則熱可塑性樹脂B1之溫度係急遽地降低。基於此些理由，相對於基板W之熱可塑性樹脂B1的密著性係會有變低的傾向。因此，藉由將被塗布在基板W之外周面A1b處的硬化狀態之熱可塑性樹脂B1以加熱部60來進行加熱並使其軟化，係成為能夠將熱可塑性樹脂B1確實地接著於基板W處，而能夠使相對於基板W之熱可塑性樹脂B1的密著性提升。之後，在此使密著性作了提升的狀態下，熱可塑性樹脂B1係硬化。藉由此，在蝕刻工程中，係成為能夠對於硬化狀態之熱可塑性樹脂B1起因於蝕刻液之流動或由旋轉所導致之離心力而剝離、或者是起因於基板W與熱可塑性樹脂B1之間之密著性不良而導致蝕刻液流入並到達外周面A1b處的情形作抑制，並能夠更確實地對於基板尺寸的縮小作抑制。 又，在本實施形態中，係亦可將由加熱部60所致之加熱，構成為並不在當正在對於基板W塗布熱可塑性樹脂B1時而進行，而是在塗布後再開始進行。由於在塗布時之熱可塑性樹脂B1的軟化係被作抑制，因此，在針對被塗布在基板W上之熱可塑性樹脂B1之塗布寬幅或膜厚而特別要求有高的精確度或均一性的情況時，較理想，係在塗布後再開始進行加熱。 如同以上所作了說明一般，若依據第1實施形態，則藉由將軟化狀態之熱可塑性樹脂供給至台30上之基板W之外周端部A1處、例如供給至基板W之外周面A1b處，該外周面A1b係被硬化狀態之熱可塑性樹脂B1所覆蓋。進而，藉由將覆蓋基板W之外周面A1b的硬化狀態之熱可塑性樹脂B1加熱並使其軟化，由於熱可塑性樹脂B1係確實地接著於基板W處，因此係能夠使相對於基板W之熱可塑性樹脂B1的密著性提升。故而，在蝕刻工程中，係成為能夠對於覆蓋基板W之外周面A1b之熱可塑性樹脂B1剝離或者是起因於基板W與熱可塑性樹脂B1之間之密著性不良而導致蝕刻液侵入的情形作抑制，基板W之外周面A1b係藉由硬化狀態之熱可塑性樹脂B1而被確實地作保護。藉由此，係成為能夠對於基板W之外周面A1b被蝕刻液所侵蝕的情形作抑制，而能夠對於基板尺寸的縮小作抑制。 (樹脂塗布之其他例) 將前述之由供給噴嘴52所致之樹脂塗布之例，作為第1例，並作為樹脂塗布之其他例，而針對第2例以及第3例來參照圖5~圖7而作說明。 作為第2例，如同圖5中所示一般，供給噴嘴52，係位置於台30上之基板W之外周區域A1a的正上方、例如在外周區域A1a處而位置在接近基板W之外側之位置的正上方處，並對於該外周區域A1a而供給軟化狀態之熱可塑性樹脂B1。在第2例中，相較於第1例，軟化狀態之熱可塑性樹脂B1之供給量係為多。被供給至基板W之外周區域A1a處的熱可塑性樹脂B1，係以覆蓋該外周區域A1a、並且進而覆蓋與外周區域A1a相連之外周面A1b的方式，而逐漸擴廣。在此樹脂供給時，由於台30上之基板W係與台30一同旋轉，因此，從供給噴嘴52所吐出的熱可塑性樹脂B1，係因應於基板W之旋轉而沿著基板W之外周區域A1a以及外周面A1b來依序附著。而，例如若是在基板W處之熱可塑性樹脂B1之附著開始點環繞了1周，則如同圖6中所示一般，在基板W之外周區域A1a之全體以及外周面A1b之全面上，熱可塑性樹脂B1係被作塗布，該基板W之外周區域A1a之全面以及外周面A1b之全面係被熱可塑性樹脂B1所覆蓋。 作為第3例，如同圖7中所示一般，供給噴嘴52，係位置於台30上之基板W之外周區域A1a的正上方、例如在外周區域A1a處而位置在較第2例之位置而更加接近基板W之內側之位置的正上方處，並對於該外周區域A1a而供給軟化狀態之熱可塑性樹脂B1。在第3例中，相較於第2例，軟化狀態之熱可塑性樹脂B1之供給量係為少。被供給至基板W之外周區域A1a處的熱可塑性樹脂B1，係以覆蓋基板W之外周區域A1a的方式，而逐漸擴廣。在此樹脂供給時，由於台30上之基板W係與台30一同旋轉，因此，從供給噴嘴52所吐出的熱可塑性樹脂B1，係因應於基板W之旋轉而沿著基板W之外周區域A1a來依序附著。而，例如若是在基板W處之熱可塑性樹脂B1之附著開始點環繞了1周，則在基板W之外周區域A1a之全面上，熱可塑性樹脂B1係被作塗布，該基板W之外周區域A1a之全面係被熱可塑性樹脂B1所覆蓋。 在前述之第2以及第3例中，亦係與前述之第1例相同的，能夠對於基板尺寸之縮小作抑制。另外，在熱可塑性樹脂B1之供給時的供給噴嘴52與台30上之基板W之間之垂直分離距離、供給位置、供給量、台30之旋轉數等，係實驗性地預先求取出來，關於此點，係與第1例相同。又，在第2例、第3例中，關於將被塗布在基板W處之熱可塑性樹脂B1藉由加熱部60來進行加熱並使其軟化一點，亦係與第1例相同。在第3例中，基板W之外周面A1b之全面係並未被熱可塑性樹脂B1所覆蓋，但是基板W之外周區域A1a之全面係被熱可塑性樹脂B1所覆蓋(參照圖7)。在蝕刻工程中，被供給至進行旋轉的基板W之被處理面Wa之中央附近處的蝕刻液，係藉由以基板W之旋轉所致之離心力而擴廣至基板W之被處理面Wa之全體。此作了擴廣的蝕刻液，係起因於由基板W之旋轉所致的離心力而朝向基板W之外飛散，但是，此時，藉由附著在基板W之外周區域A1a上的硬化狀態之熱可塑性樹脂B1，蝕刻液之飛散方向係相對於水平面而偏向至上方。因此，蝕刻液流入至基板W之外周面A1b處的情形係被作抑制。藉由此，與前述之第1例相同的，係能夠對於基板尺寸之縮小作抑制。另外，第3例，較理想，係使用在當基板W之外周面A1b或下面為藉由SiN或SiO2 而作了被膜時的情況中。但是，較理想，為了確實地保護基板W之外周面A1b免於受到蝕刻液之侵蝕，係藉由熱可塑性樹脂B1來將外周面A1b之全面完全地作覆蓋。 另外，控制部70，在前述之第1~第3例之樹脂塗布之方法中，係以對於供給噴嘴52之對台30上之基板W供給熱可塑性樹脂之供給位置、亦即是對於熱可塑性樹脂所被作供給的基板W上之位置作改變的方式，來對於噴嘴移動機構53進行控制。例如，控制部70，在使供給噴嘴52對於台30上之基板W之外周面A1b供給熱可塑性樹脂B1的情況時(第1例)、和在對於台30上之基板W之上面的外周區域A1a以及外周面A1b塗布熱可塑性樹脂B1的情況時(第2例)，係以改變對於台30上之基板W而供給熱可塑性樹脂B1之供給位置的方式，來對於噴嘴移動機構53進行控制。 於此，例如在前述之第3例中，當在對於基板W而塗布了熱可塑性樹脂B1之後，由加熱部60所致之加熱並未被實行的情況時，如同圖8中所示一般，在被供給至了基板W之被處理面Wa處的熱可塑性樹脂B1中，係會有產生身為熱可塑性樹脂B1並未與基板W相接觸的部分之未接著部C1的情形。此未接著部C1，係起因於熱可塑性樹脂B1之起點B1a與終點B1b相互重疊一事而發生。熱可塑性樹脂B1之起點(附著開始點)B1a，係身為供給噴嘴52開始對於基板W之熱可塑性樹脂之供給的位置(供給開始位置)的正下方之位置，熱可塑性樹脂B1之終點(附著結束點)B1b，係身為供給噴嘴52停止對於基板W之熱可塑性樹脂之供給的位置(供給停止位置)的正下方之位置。若是此熱可塑性樹脂B1之未接著部C1藉由加熱部60而被加熱，則該未接著部C1係軟化，並與基板W之被處理面Wa相接觸而作接著。 在蝕刻工程中，被供給至進行旋轉的基板W之被處理面Wa之中央附近處的蝕刻液，係藉由以基板W之旋轉所致之離心力而擴廣至基板W之被處理面Wa之全體。但是，若是存在有前述之未接著部C1，則蝕刻液係會從未接著部C1而流入至基板W之外周面A1b處，基板W之外周面A1b係成為被蝕刻液所侵蝕。因此，藉由以加熱部60來加熱熱可塑性樹脂B1之未接著部C1，該未接著部C1係軟化並接著於基板W處。故而，在被供給至基板W之被處理面Wa處的熱可塑性樹脂B1處，係能夠將未接著部C1消除。亦即是，就算是在熱可塑性樹脂B1之塗布時間點處係產生有未接著部C1，亦可藉由以加熱部60來至少將此未接著部C1加熱，而將未接著部C1消滅並作修復。藉由此，由於蝕刻液流入至基板W之外周面A1b處的情形係被作抑制，因此係能夠確實地對於基板尺寸的縮小作抑制。 又，當在熱可塑性樹脂B1處的未接著部C1之場所以外的部分並沒有密著性之問題的情況時，係只需要將未接著部C1消滅即可。關於此，例如，係亦可構成為在未接著部C1會與加熱部60相對向之位置處，停止基板W之旋轉，並藉由加熱部60來加熱未接著部C1而使其軟化。另外，由於由供給噴嘴52所致之供給開始位置以及供給停止位置係預先被有所設定，因此，係能夠基於該些之供給開始位置以及供給停止位置，來在未接著部C1會與加熱部60相對向之位置處而使基板W之旋轉停止。係亦可構成為使加熱部60能夠在相對於基板W之外周端部A1而作接近遠離之方向上、例如在水平方向上進行移動。當加熱部60在直到成為特定溫度為止係需要耗費時間的情況時，係在從基板W而離開了的位置處，事先對加熱部60進行加熱驅動，並在對於未接著部C1進行加熱時，以使加熱部60接近未接著部C1的方式來使其作移動。 (加熱部配置之其他例) 將前述之加熱部60之配置，作為第1例，並作為配置之其他例，而針對第2例以及第3例來參照圖9以及圖10而作說明。 作為第2例，如同在圖9中所示一般，加熱部60，係被設置在台30上之基板W之外周面A1b的下方處。此加熱部60，係對於被塗布在台30上之基板W之外周面A1b上的熱可塑性樹脂B1直接進行加熱。藉由此，來直接加熱熱可塑性樹脂B1並使其全體性地軟化，而能夠使相對於基板W之熱可塑性樹脂B1的密著性提升。 作為第3例，如同在圖10中所示一般，加熱部60，係被設置在台30上之基板W之外周區域A1c的下方處。此加熱部60，係藉由對於基板W而以非接觸來進行加熱，而將被塗布在台30上之基板W之外周面A1b上的熱可塑性樹脂B1間接性地加熱。藉由此，來僅使與基板W有所接觸的熱可塑性樹脂B1之一部分(基板W側之部分)軟化，而能夠使相對於基板W之熱可塑性樹脂B1的密著性提升。 另外，加熱部60，係只要設置在對於被塗布在台30上之基板W之外周端部A1處的熱可塑性樹脂B1而直接性或間接性地、或者是能夠直接性或間接性地進行加熱的位置處即可，例如，係亦可被設置在台30上之基板W之外周端部A1之上方處，又，係亦可被設置在台30上之基板W之外周端部A1之上方、下方以及側方的任一者或者是全部處。例如，在將加熱部60設置在上方以及側方處、設置在下方以及側方處、或者是設置在上方、下方以及側方處的情況時，該些之加熱部60(藉由各加熱部60所構成的加熱部)，係成為除了如同第1例一般地來將被塗布在台30上之基板W之外周面A1b處的熱可塑性樹脂B1而從該熱可塑性樹脂B1並未與基板W之外周面A1b相接觸之面側(部分側)來進行加熱之外，亦如同第2例和第3例一般地而對於基板W自身進行加熱。 〈第2實施形態〉 參考圖11以及圖12，針對第2實施形態作說明。另外，在第2實施形態中，係針對與第1實施形態間的相異點(加熱部以及基板處理工程)作說明，並省略其他之說明。 如同圖11中所示一般，在第2實施形態中，加熱部60，係身為藉由輻射熱來加熱基板W之鹵素燈加熱器或雲母加熱器(例如，圓環狀之雲母加熱器)，並被設置在台30之正上方處。此加熱部60，係在熱可塑性樹脂B1之塗布前，預先對於基板W而以非接觸來進行加熱，而藉由從基板W來對於被塗布在基板W之外周面A1b上的熱可塑性樹脂B1傳導熱，而將被塗布在台30上之基板W之外周端部A1 (例如，外周面A1b)處之熱可塑性樹脂B1間接性地加熱。 (基板處理工程) 接著，針對前述之基板處理裝置10所進行之基板處理工程之流程作說明。在此基板處理工程中，控制部70係對於各部之動作進行控制。 如同圖12中所示一般，在步驟S11中，與第1實施形態相同的，係藉由機器手而將未處理之基板W搬入至處理室20內並載置於台30上，該被作了載置的基板W係藉由台30而被作吸附保持。機器手，在基板W之載置後，係從處理室20而避開。另外，在基板W之搬入時，供給噴嘴52係位置於待機位置。 若是前述之機器手從處理室20而避開，則在步驟S12中，台30之旋轉係藉由旋轉機構40而被開始，加熱部60之加熱動作係被開始。藉由此加熱，基板W之溫度係上升至特定溫度(例如150℃)以上。若是基板W之溫度成為特定溫度以上，則在步驟S13中，軟化狀態之熱可塑性樹脂B1係被塗布在台30上之基板W之外周端部A1處。具體而言，係藉由以下之處理程序來進行。與第1實施形態相同的，供給噴嘴52係藉由噴嘴移動機構53而從待機位置來移動至供給位置處。若是供給噴嘴52到達供給位置處，則供給噴嘴52，係位置於台30上之基板W之外周面A1b的正上方處，若是台30之旋轉數成為特定之旋轉數(例如10rpm)，則係朝向基板W之外周面A1b之上部而吐出軟化狀態之熱可塑性樹脂B1。從供給噴嘴52所吐出的熱可塑性樹脂B1，係因應於基板W之旋轉而沿著基板W之外周面A1b來依序附著。而，例如若是在基板W處之熱可塑性樹脂B1之附著開始點環繞了1周，則在基板W之外周面A1b之全面上，熱可塑性樹脂B1係被作塗布，台30上之基板W之外周面A1b之全面係被熱可塑性樹脂B1所覆蓋。被塗布在外周面A1b上的熱可塑性樹脂B1之厚度，例如係為0.5~3mm。 在此塗布動作中，由於基板W之溫度係成為特定溫度以上，而從基板W來對於被塗布在基板W之外周面A1b上的熱可塑性樹脂B1傳導有熱，因此，與基板W之外周面A1b作了接觸的熱可塑性樹脂B1之溫度急遽降低的情形係被作抑制，被塗布在基板W之外周面A1b處之熱可塑性樹脂B1的表層亦係軟化。故而，熱可塑性樹脂B1與基板W作接觸並立即硬化的情形係被作抑制，並確實地接著於基板W之外周面A1b處。藉由此，相對於基板W之熱可塑性樹脂B1的密著性係提升。 若是前述之樹脂塗布結束而吐出被停止，則供給噴嘴52係從塗布位置而移動至待機位置處，在步驟S14中，台30之旋轉係被停止，加熱部60之加熱動作係被停止。另外，係亦可構成為：當在基板W處之熱可塑性樹脂B1之附著開始點作了1圈的環繞並將從供給噴嘴52而來之熱可塑性樹脂B1之吐出作了停止之後，亦藉由加熱部60來將基板W之加熱作特定時間之持續進行。於此之所謂特定時間，例如係為就算是在萬一產生了圖8中所示之未接著部C1時也能夠將該未接著部C1作修復的時間。此特定時間，係可為較在第1實施形態中之由加熱部60所致之加熱時間而更短，亦可為台30之一圈旋轉的時間。若是由加熱部60所致之加熱動作停止，則被塗布在外周面A1b上的熱可塑性樹脂B1，係起因於溫度之降低而成為硬化狀態。若是前述之供給噴嘴52回到待機位置處，台30之旋轉被停止，則在步驟S15中，與第1實施形態相同的，完成樹脂塗布之基板W，係從台30上藉由前述之機器手(未圖示)而被搬出至處理室20外，並被搬入至蝕刻處理裝置(未圖示)中。之後，與第1實施形態相同的，藉由蝕刻處理裝置，基板W之被處理面Wa係藉由蝕刻液而被作處理。 在此種基板處理工程中，與第1實施形態相同的，軟化狀態之熱可塑性樹脂係被塗布在台30上之基板W之身為外周端部A1之一部分的外周面A1b上，該外周面A1b之全面係被硬化狀態之熱可塑性樹脂B1所覆蓋。藉由此，在身為後續工程之蝕刻工程中，由於硬化狀態之熱可塑性樹脂B1係作為保護基板W之外周面A1b免於受到蝕刻液之影響的保護材而起作用，因此，基板W之外周面A1b被蝕刻液所侵蝕的情形係被作抑制，而能夠對於基板尺寸之縮小作抑制。其結果，由於係成為就算是在基板W之外周部分處也能夠得到所期望之尺寸的元件晶片，因此係能夠對於元件晶片之損失的發生作抑制。又，係成為能夠進行像是後續工程中之由機器人所致之搬送等的後續工程中之基板搬送，而能夠使良率提升。 又，藉由在對於基板W之被處理面Wa的熱可塑性樹脂B1之供給前(從供給前起)便對於基板W進行加熱，若是從供給噴嘴52所被吐出了的熱可塑性樹脂B1與基板W之外周面A1b作接觸，則會從基板W而對於該熱可塑性樹脂B1傳導熱。因此，與基板W之外周面A1b作了接觸的熱可塑性樹脂B1之溫度急遽降低的情形係被作抑制，被塗布在基板W之外周面A1b處之熱可塑性樹脂B1的表層亦係軟化，故而，係能夠對於熱可塑性樹脂B1與基板W作接觸並立即硬化的情形作抑制。故而，藉由加熱基板W，由於係成為能夠使熱可塑性樹脂B1之硬化延遲並將熱可塑性樹脂B1確實地接著於基板W之外周面A1b處，因此係能夠相對於基板W之熱可塑性樹脂B1的密著性提升。之後，在此使密著性作了提升的狀態下，熱可塑性樹脂B1係硬化。藉由此，在蝕刻工程中，係成為能夠對於覆蓋基板W之外周面A1b之熱可塑性樹脂B1起因於蝕刻液之流動或由旋轉所導致之離心力而剝離、或者是起因於基板W與熱可塑性樹脂B1之間之密著性不良而導致蝕刻液流入並到達外周面A1b處的情形作抑制，並能夠更確實地對於基板尺寸的縮小作抑制。 如同以上所作了說明一般，若依據第2實施形態，則係能夠得到與第1實施形態相同之效果。又，係藉由在熱可塑性樹脂B1之塗布前預先對於基板W進行加熱，而從基板W來對於被塗布在基板W之外周面A1b上的熱可塑性樹脂B1傳導熱，來將被塗布在基板W之外周面A1b處之熱可塑性樹脂B1間接性地加熱。藉由此，被從供給噴嘴52而吐出並附著在基板W上的熱可塑性樹脂B1之溫度急遽降低的情形係被作抑制，被塗布在基板W之外周面A1b處之熱可塑性樹脂B1的表層亦係軟化。因此，熱可塑性樹脂B1之硬化係延遲，熱可塑性樹脂B1係確實地接著於基板W處，故而，相對於基板W之熱可塑性樹脂B1的密著性係提升。故而，在蝕刻工程中，係成為能夠對於覆蓋基板W之外周面A1b之熱可塑性樹脂B1剝離或者是起因於基板W與熱可塑性樹脂B1之間之密著性不良而導致蝕刻液流入並到達外周面A1b處的情形作抑制，基板W之外周面A1b係藉由硬化狀態之熱可塑性樹脂B1而被確實地作保護。藉由此，係成為能夠對於基板W之外周面A1b被蝕刻液所侵蝕的情形作抑制，而能夠對於基板尺寸的縮小作抑制。 〈第3實施形態〉 參考圖13以及圖14，針對第3實施形態作說明。另外，在第3實施形態中，係針對與第1實施形態間的相異點(樹脂塗布之其他例)作說明，並省略其他之說明。 第3實施形態之樹脂塗布，基本上係與第1實施形態之樹脂塗布之第3例相同，但是，在將軟化狀態之熱可塑性樹脂B1在基板W之外周區域A1a處而沿著基板W之外周來環狀地作塗布的次數上係為相異。在第1實施形態之樹脂塗布的第3例中，係將軟化狀態之熱可塑性樹脂B1在基板W之外周區域A1a之寬幅(半徑方向之寬幅)上而作基板W之一周之量的環狀塗布。另一方面，在第3實施形態中，如同圖13中所示一般，係將「以較基板W之外周區域A1a之寬幅而更狹窄之特定寬幅來將熱可塑性樹脂B1作基板W之一周之量的環狀塗布」一事，作特定次數(在圖13中係為2次)的反覆進行。特定寬幅(塗布寬幅)，係藉由將基板W之外周區域A1a之寬幅除以塗布次數，來預先設定之。例如，當基板W之外周區域A1a之寬幅係為4mm，而塗布次數係為2次的情況時，特定寬幅係成為2mm。 在基板處理工程中，供給噴嘴52，係如同圖13中所示一般，在台30上之基板W之外周區域A1a的內側(基板W之中心側)處，將軟化狀態之熱可塑性樹脂B1作基板W之一周之量的環狀塗布，之後，朝向基板W之外周區域A1a之外側而在基板W之半徑方向上移動，並於該外側而將軟化狀態之熱可塑性樹脂B1與內側之完成塗布之熱可塑性樹脂B1相互鄰接地而作基板W之一周之量的環狀塗布。藉由此，在基板W之外周區域A1a處，係以相鄰接之複數之環狀(在圖13中係為2個的圓環狀)而被塗布有熱可塑性樹脂B1，被作了塗布的熱可塑性樹脂B1係在基板W之外周區域A1a上而硬化。之後，係以特定時間而進行加熱部60之加熱動作。基板W之外周區域A1a上的硬化狀態之熱可塑性樹脂B1，係藉由前述之加熱動作而再度軟化，並如同圖14中所示一般，一體化而成為1個的環(在圖14中係為圓環)，並接著於基板W之外周區域A1a處。相對於基板W之熱可塑性樹脂B1的密著性係提升，若是加熱動作被停止，則熱可塑性樹脂B1係再度硬化。另外，如同前述一般之由供給噴嘴52所致之軟化狀態之熱可塑性樹脂B1之供給(例如，供給開始時序和供給停止時序)或供給噴嘴52與基板W之間之相對移動(例如，基板W之旋轉動作)等，係被控制部70所控制。 於此，如同圖13中所示一般，當軟化狀態之熱可塑性樹脂B1以特定寬幅而被作基板W之一周之量之環狀之塗布時，熱可塑性樹脂B1，係以在1個的環(圓環)中而終點(附著結束點)B1b會超過起點(附著開始點)B1a的方式而被作塗布，並被形成有重疊部(重疊部分)B1c。若是以使終點B1b並不超過起點B1a地而僅與該起點B1a相接觸的程度來進行塗布，則在起點B1a之周圍，基板W之外周區域A1a係並不會被熱可塑性樹脂B1所覆蓋，而產生有使基板W之外周區域A1a露出的場所。若是在此基板W之外周區域A1a之一部分作了露出的狀態下而進行蝕刻處理，則該露出了的部分係會被蝕刻(不必要之蝕刻)。為了避免此不必要之蝕刻，係如同前述一般地以終點B1b會超過起點B1a的方式來進行塗布。另外，若是從供給噴嘴52而來之每單位時間之吐出量變多，則因被塗布在基板W處的熱可塑性樹脂B1之寬幅、厚度均會成為難以控制。因此，為了避免不必要的蝕刻，若是塗布寬幅變廣，則係有必要將重疊部B1c之長度增長，在塗布寬幅與重疊部B1c之長度之間係存在有正比關係。 然而，若是以在1個的環處而終點B1b會超過起點B1a的方式來進行塗布，則重疊部B1c係相較於其他之部分(未重疊部分)而熱可塑性樹脂B1之量會變多。雖然若是此量為被有所抑制則不會發生問題，但是，若是如同使軟化狀態之熱可塑性樹脂B1以基板W之外周區域A1a之寬幅來作基板W之一周之量之環狀之塗布的情況一般地而重疊部B1c之熱可塑性樹脂B1變多，則在由加熱部60之加熱動作所致之再度之軟化時，重疊部B1c之熱可塑性樹脂B1會擴廣並進入至蝕刻對象區域R1中，而會有蝕刻對象區域R1之一部分被熱可塑性樹脂B1所覆蓋的情形。若是在此狀態下而蝕刻處理被進行，則在蝕刻對象區域R1中係會產生並未被蝕刻的場所(未蝕刻)。 因此，在本實施形態中，係將「以較基板W之外周區域A1a之寬幅而更狹窄之特定寬幅來將熱可塑性樹脂B1作基板W之一周之量的環狀塗布」一事，作特定次數的反覆進行。於此情況，就算是以在1個的環處而終點B1b會超過起點B1a的方式來進行塗布，相較於前述之以基板W之外周區域A1a之寬幅來作基板W之一周之量之環狀之塗布的情況，由於一周之量的塗布寬幅係變窄，因此，係能夠將重疊部B1c之長度縮短，而能夠對於重疊部B1c之熱可塑性樹脂B1之量作抑制。藉由此，在由加熱部60之加熱動作所致之再度之軟化時，係成為能夠對於熱可塑性樹脂B1擴廣並進入至蝕刻對象區域R1中的情形作抑制，而能夠使再硬化後之塗布寬幅成為均一。此係因為，相較於前述之以基板W之外周區域A1a之寬幅來作基板W之一周之量之環狀之塗布的情況，係能夠將從供給噴嘴52而來之每單位時間之吐出量減少，被塗布在基板W處的熱可塑性樹脂B1之寬幅、厚度均會成為易於控制之故。故而，係能夠對於基板W之外周區域A1a之一部分有所露出的情形作抑制，而避免不必要的蝕刻，並且，在由加熱部60之加熱動作所致之再度之軟化時，也能夠對於熱可塑性樹脂B1擴廣並進入至蝕刻對象區域R1中的情形作抑制，而成為能夠避免未蝕刻的情形，因此，係能夠對起因於前述之不必要之蝕刻或未蝕刻所導致的基板W之品質降低作抑制。 另外，各環之重疊部B1c之長度、亦即是重疊量(重合量：使終點B1b超過起點B1a而延伸的長度)，係為相同，但是，係並不被限定於此，而亦可為相異。例如，重疊量，在能夠對於在起點B1a之周圍處而基板W之外周區域A1a有所露出的情形作抑制之範圍內，為了避免前述之起因於重疊部B1c之熱可塑性樹脂B1之擴廣所導致的未蝕刻，係以盡可能少為理想。 如同以上所作了說明一般，若依據第3實施形態，則係能夠得到與第1實施形態相同之效果。又，供給噴嘴52，係對於藉由台30而被作支持的基板W之外周區域A1a，來以沿著基板W之外周而延伸並且相互鄰接的複數之環狀(例如，同心圓之環狀)而供給軟化狀態之熱可塑性樹脂B1，並且以使被供給至外周區域A1a處的複數之環狀之熱可塑性樹脂B1會在各環處而於對於外周區域A1a之熱可塑性樹脂B1之起點B1a處相互重疊的方式，來供給軟化狀態之熱可塑性樹脂B1。藉由此，由於在各環之起點B1a處係分別被形成有重疊部B1c，因此，係成為能夠對於在起點B1a之周圍處而基板W之外周區域A1a之一部分有所露出的情形作抑制，而能夠避免不必要的蝕刻。又，由於在各環處之重疊部B1c之熱可塑性樹脂B1之量為被有所抑制，因此，在由加熱部60之加熱動作所致之再度之軟化時，係成為能夠對於熱可塑性樹脂B1擴廣並進入至蝕刻對象區域R1中的情形作抑制，而能夠避免未蝕刻的情形。故而，係能夠對起因於前述之不必要蝕刻或未蝕刻所導致的基板W之品質降低作抑制。 又，供給噴嘴52，係使被供給至外周區域A1a處的環狀之熱可塑性樹脂(第1熱可塑性樹脂)B1之重疊部B1c，相對於與該環狀之熱可塑性樹脂B1相鄰接之環狀之熱可塑性樹脂(第2熱可塑性樹脂)B1的重疊部B1c而在基板W之周方向上而作偏移，並供給軟化狀態之熱可塑性樹脂B1。詳細而言，供給噴嘴52，係以使各環之起點B1a以及終點B1b在相鄰接之環處而不會相鄰的方式，來將各環之起點B1a以及終點B1b於相鄰接之環處而在基板W之周方向(例如，圓周方向)上作偏移，並將軟化了的熱可塑性樹脂B1塗布為複數之環狀。藉由此，由於各環之起點B1a以及終點B1b係在相鄰接之環處而分別並不相鄰，因此，各環之重疊部B1c亦係在相鄰接之環處而並不相鄰。故而，相較於各環之重疊部B1c在相鄰接之環處而為相鄰的情況，在由加熱部60之加熱動作所致之再度之軟化時，係成為能夠將熱可塑性樹脂B1朝向蝕刻對象區域R1所流動之量減少，故而，係能夠對於熱可塑性樹脂B1擴廣並進入至蝕刻對象區域R1中的情形確實地作抑制。 〈其他實施形態〉 另外，在熱可塑性樹脂B1之供給中，係只要使台30上之基板W與供給噴嘴52進行相對移動即可，例如，係亦可構成為並不進行台30之旋轉，而相對於台30上之基板W之外周端部A1來使供給噴嘴52移動，而進行熱可塑性樹脂B1之供給。作為使基板W以及供給噴嘴52作相對移動之機構，除了使台30作旋轉之移動機構40以外，例如，係亦可使用使供給旋轉機構52沿著圓環或矩形環等之環或者是沿著直線來移動的移動機構(作為其中一例，例如，將供給噴嘴52作支持並成為能夠使其曲線狀或直線狀地進行滑動移動的導引構件、成為滑動移動之驅動源之馬達等)。除了將熱可塑性樹脂B1塗布為圓環狀之外，亦可塗布為矩形環狀等之各種形狀之環狀。 又，在圖3中，雖係針對將加熱部60配置在台30之周圍之1個場所處的例子作了展示，但是，係亦可在台30之周圍而設置複數個。例如，係亦可相對於圖3中所示之加熱部60，而包夾著台30之旋轉中心地來在相反側處配置另外1個的加熱部。於此情況，例如，熱可塑性樹脂B1之附著開始點，由於係至少在作半周之移動之間會被作1次的加熱，因此硬化之程度係更被抑制，而能夠期待有密著性的提升。又，加熱部60，係亦可為以包圍基板W之周圍的方式來作了配置的環狀之加熱部。 又，在圖11中，係構成為藉由被設置在台30之正上方處的加熱部60，來在熱可塑性樹脂B1之塗布之前(從塗布前起)，便對於基板W進行加熱。但是，係亦可如同在圖1或圖9、圖10中所示一般，將加熱部60，配置在台30之周圍或者是基板W之下方處。 又，雖係構成為若是在基板W處之熱可塑性樹脂B1之附著開始點作了1圈的環繞，則使從供給噴嘴52而來之熱可塑性樹脂B1之吐出停止，但是，係亦可構成為將從供給噴嘴52而來之熱可塑性樹脂B1的吐出在使附著開始點作了2圈以上之移動之後再停止。特別是，在如同圖5或圖7中所示一般之對於在基板W處之與重力方向相正交之外周區域A1a處進行塗布的情況時，較理想，係涵蓋2圈以上地來進行塗布。此係因為，相較於以1圈來進行塗布的情況，為了得到相同之塗布寬幅、相同之膜厚的熱可塑性樹脂B1，係能夠使從供給噴嘴52而來之每單位時間之吐出量減少。因此，係能夠使被塗布在基板W處的熱可塑性樹脂B1之寬幅、厚度均成為易於控制之故。進而，於此情況，係亦可構成為在每次繞圈時使供給噴嘴52在基板之半徑方向上而有所偏移。 又，在第2實施形態中，藉由加熱部60所進行的基板W之加熱，雖係構成為在由供給噴嘴52所致之熱可塑性樹脂B1的塗布前、塗布中乃至於塗布後亦繼續地被進行，但是，係亦可構成為僅在塗布熱可塑性樹脂B1之前置階段中，使加熱部60動作。亦即是，係亦可構成為：藉由加熱部60而僅進行基板W之預熱，並對於預熱狀態之基板W，而從供給噴嘴52來進行熱可塑性樹脂B1之吐出。 又，係亦能夠以使熱可塑性樹脂B1被從供給噴嘴52而適當地吐出的方式，來在供給位置處之吐出動作之前，先進行試行吐出。例如，在供給噴嘴52被定位於供給位置處時，係事先於待機位置處而從供給噴嘴52來吐出熱可塑性樹脂B1(事先吐出)。被從供給噴嘴52所吐出了的熱可塑性樹脂B1，係亦可構成為藉由設置在供給噴嘴52之下方處的承盤來作承接。 又，係亦可將由供給噴嘴52所致之熱可塑性樹脂B1之塗布，構成為一面使供給噴嘴52進行移動一面例如在台30之旋轉半徑方向上移動地來進行。 又，作為台30，除了將基板W作吸附並作保持之台以外，亦可構成為使用「具備有複數(例如，3個)的保持構件，並藉由該些之保持構件來將基板W夾入，並保持於水平狀態」之台。 又，除了在基板處理裝置10之外而實行蝕刻處理以外，係亦可構成為在處理室20內設置供給蝕刻液(處理液之其中一例)之供給噴嘴，並在基板處理裝置10內而實行蝕刻處理。 又，在第3實施形態中，當在基板W之外周區域A1a處將軟化狀態之熱可塑性樹脂B1以沿著基板W之外周而延伸之複數之環狀來作塗布的情況時，雖係針對從基板W之外周區域A1a之內側起朝向外側而依序進行塗布的情況作了例示，但是，係並不被限定於此，亦可構成為從基板W之外周區域A1a之外側起朝向內側而依序進行塗布，又，當複數之環係為3個以上的情況時，係亦可構成為並非為依序而是隨機性地進行塗布。 又，在第3實施形態中，當在基板W之外周區域A1a處將軟化狀態之熱可塑性樹脂B1以沿著基板W之外周而延伸之複數之環狀來作塗布的情況時，雖係針對以使各環之起點B1a以及終點B1b在相鄰接之環處而在基板W之周方向上作偏移，並使各環之重疊部B1c在相鄰接之環處而不會相鄰的情形來作了例示，但是，係並不被限定於此。亦可並不使各環之起點B1a以及終點B1b在基板W之周方向上作偏移，亦即是分別定位於同一半徑上，並構成為使各環之重疊部B1c在相鄰接之環處而相鄰。但是，為了對於熱可塑性樹脂B1擴廣並進入至蝕刻對象區域R1中的情形更加確實地作抑制，較理想，係構成為使各環之重疊部B1c在相鄰接之環處而不會相鄰。 又，在第3實施形態中，雖係針對當在基板W之外周區域A1a處將軟化狀態之熱可塑性樹脂B1作塗布時，塗布寬幅係在各環處而為相同的情形作了例示，但是，係並不被限定於此，該塗布寬幅係亦可在各環處而為相異。例如，係亦可構成為從基板W之外周區域A1a之內側起朝向外側而逐漸將塗布寬幅增粗或者是縮細，又，當複數之環係為3個以上的情況時，係亦可構成為隨機性將塗布寬幅作變更。 又，熱可塑性樹脂B1，由於相較於熱硬化性樹脂等之材料，其之相對於基板W之密著度係為低，因此，係能夠並不使基板W破損地而將密著於基板W上並硬化了的熱可塑性樹脂B1機械性地剝離。因此，係亦可構成為設置有在蝕刻工程後從基板W而將硬化狀態之熱可塑性樹脂B1剝離之剝離部。例如，係可藉由剝離手(鉗狀或鑷狀之手、鎳鉻線等之發熱體、或者是吸引部)來將硬化狀態之熱可塑性樹脂B1之一部分作捏抓，並使將硬化狀態之熱可塑性樹脂B1之一部分作了捏抓的剝離手移動，而從基板W來將硬化狀態之熱可塑性樹脂B1剝離。另外，若是想要將密著於基板W上並硬化了的熱硬化性樹脂機械性地剝離，則基板W係會破損。熱硬化性樹脂，若是一度硬化，則便無法藉由熱來使熱硬化性樹脂軟化，為了並不使基板W損傷地而將硬化狀態之熱硬化性樹脂去除，係需要藉由藥液等來將熱硬化性樹脂溶解。故而，相較於使用藥液來將硬化狀態之熱可塑性樹脂B1溶解並從基板W而去除的情況，藉由將硬化狀態之熱可塑性樹脂B1從基板W而剝離，係能夠以短時間來將硬化狀態之熱可塑性樹脂B1從基板W而去除，並且也不需要使用藥液，因此係能夠對起因於藥液之廢棄所致的對環境所造成的負擔有所抑制。另外，由於熱可塑性樹脂B1相較於熱硬化性樹脂，其之對於基板W之密著度係為低，因此，藉由並非使用熱硬化性樹脂而是使用熱可塑性樹脂B1，係成為易於將基板W上之硬化狀態之熱可塑性樹脂B1從基板W而剝離，而能夠並不對於基板W造成損傷地而將硬化狀態之熱可塑性樹脂B1從基板W去除。在使用有熱硬化性樹脂的情況時，為了並不對於基板W造成損傷地而將硬化狀態之熱硬化性樹脂從基板W去除，係成為需要設置進行由藥液等所致之去除的裝置，並成為導致裝置之複雜化和成本的提升。 又，係亦可構成為將剝離了的熱可塑性樹脂B1藉由回收部來作回收，進而，係亦可構成為對於回收了的熱可塑性樹脂B1作再利用。例如，作為回收手段，係可使前述之剝離手在回收部之正上方處而將硬化狀態之熱可塑性樹脂B1剝落，回收部係接收落下的硬化狀態之熱可塑性樹脂B1並作收容。又，作為再利用手段，係亦可構成為在處理室20內設置具備有加熱器之回收部，並藉由配管來將回收部與儲存單元51之槽51a作連接，而將作了回收的硬化狀態之熱可塑性樹脂B1藉由加熱器來作加熱並使其軟化，再將軟化狀態之熱可塑性樹脂B1藉由配管來回送至槽51a處。於此情況，由於係成為能夠對於熱可塑性樹脂B1進行再利用，因此，係能夠對成本作抑制，又，係能夠對起因於熱可塑性樹脂B1之廢棄所致的對環境所造成的負擔有所抑制。另外，係亦可構成為將供給噴嘴52定位於回收部之上方處並進行事先吐出。又，在對於熱可塑性樹脂B1進行再利用的構成中，係亦可構成為於待機時將供給噴嘴52定位於回收部之上方處並將熱可塑性樹脂B1連續性地持續吐出。 以上，雖係針對本發明之數個實施形態作了說明，但是，此些之實施形態係僅為作為例子所提示者，而並非為對於發明之範圍作限定。此些之新穎的實施形態，係可藉由其他之各種形態來實施，在不脫離發明之要旨的範圍內，係可進行各種之省略、置換、變更。此些之實施形態或其變形，係亦被包含於發明之範圍或要旨中，並且亦被包含在申請專利範圍中所記載的發明及其均等範圍內。<First Embodiment> Referring to Figs. 1 to 10, the first embodiment will be described. (Basic structure) As shown in FIG. 1, the substrate processing apparatus 10 of the first embodiment includes a processing chamber 20, a table 30, a rotating mechanism 40, a resin supply part 50, and a heating part 60, and Control unit 70. The processing chamber 20 is a processing box for processing the substrate W provided with the processed surface Wa. This processing chamber 20 is formed into a box shape, for example, and houses the table 30, a part of the rotating mechanism 40, a part of the resin supply part 50, the heating part 60, and the like. As the substrate W, for example, a wafer or a liquid crystal substrate is used. This substrate W becomes the target of the etching process, that is, becomes the etching target. On the upper surface of the aforementioned processing chamber 20, a cleaning unit 21 is provided. This cleaning unit 21, for example, is equipped with a filter such as a HEPA filter and a fan (none of which are shown), and purifies the downward blowing flow from the top surface of the cleaning room where the substrate processing apparatus 10 is installed. It is introduced into the processing chamber 20 to generate an airflow flowing from above to below in the processing chamber 20. The cleaning unit 21 is electrically connected to the control unit 70, and its drive system is controlled by the control unit 70. The table 30 is positioned near the center of the processing chamber 20, and is horizontally installed on the rotating mechanism 40 so as to be able to rotate in a horizontal plane. This table 30 is, for example, called a spin table. The center of the processed surface Wa of the substrate W is positioned on the rotation axis of the table 30. The stage 30, for example, sucks and holds the substrate W placed on it (suction holding). The rotating mechanism 40 supports the table 30 and is configured to rotate the table 30 in a horizontal plane. For example, the rotating mechanism 40 is provided with a rotating shaft connected to the center of the table 30, and a motor (both not shown) that rotates the rotating shaft. The rotating mechanism 40 is driven by a motor to rotate the table 30 via a rotating shaft. The rotating mechanism 40 is electrically connected to the control unit 70, and its drive system is controlled by the control unit 70. The resin supply unit 50 includes a storage unit 51, a supply nozzle 52, and a nozzle moving mechanism 53. The resin supply unit 50 is moved by the nozzle moving mechanism 53 to position the supply nozzle 52 above the outer peripheral end A1 of the substrate W on the table 30, and is sent from the storage unit 51 to the supply nozzle 52 for softening. Thermoplastic resin in a softened state is supplied from the supply nozzle 52 to the outer peripheral end A1 of the substrate W on the stage 30. In addition, the details of the outer peripheral end portion A1 of the substrate W will be described later. Here, as the thermoplastic resin, for example, PVA (polyvinyl alcohol), EVA (ethylene vinyl acetate copolymer), and urethane resin are used. This thermoplastic resin is poorly soluble in the etching liquid used in the etching process, that is, has resistance, and functions as a protective material that protects the substrate W from the etching liquid. Thermoplastic resin, for example, softens if its temperature becomes 150°C or higher, and hardens if it becomes lower than 150°C. The hardened state can also be gelatinous. The storage unit 51 includes a tank 51a, an on-off valve 51b, and a pump 51c. The tank 51a is provided with a heater 51a1, and the thermoplastic resin is heated by the heater 51a1 to store the thermoplastic resin in a softened state. The heater 51a1 functions as a heating part that softens the thermoplastic resin by heat. The groove 51a is connected to the supply nozzle 52 via the supply pipe 51a2. The on-off valve 51b and the pump 51c are provided in the middle of the path of the supply pipe 51a2. The opening/closing valve 51b, such as a solenoid valve, controls the flow (supply amount, supply timing, etc.) of the softened thermoplastic resin flowing in the supply pipe 51a2, and the pump 51c is used to control the flow in the groove 51a. The softened thermoplastic resin is sent to the driving source at the supply nozzle 52. The on-off valve 51b, the heating unit such as the pump 51c, the heater 51a1, etc. are electrically connected to the control unit 70, and their driving system is controlled by the control unit 70. In addition, preferably, a heater (not shown) extending along the extension path of the supply pipe 51a2 is also provided on the outer peripheral wall of the supply pipe 51a2. In this case, the heater also functions as a heating portion that softens the thermoplastic resin by heat, and maintains the softened state of the thermoplastic resin flowing in the supply pipe 51a2. The supply nozzle 52 is formed to be able to swing in the horizontal direction along the processed surface Wa of the substrate W on the table 30 above the table 30 by the nozzle moving mechanism 53, and is formed to be able to Move in the vertical direction. The supply nozzle 52 is opposed to the outer peripheral end A1 of the substrate W on the table 30, and sends the softened thermoplastic resin supplied from the groove 51a through the supply pipe 51a2 toward the substrate W on the table 30 The outer peripheral end A1 is supplied. As the supply nozzle 52, for example, a dispenser is used. In addition, the supply nozzle 52 is provided with a heater 52a. The heater 52a functions as a heating portion that softens the thermoplastic resin by heat, and maintains the softened state of the thermoplastic resin flowing in the supply nozzle 52. The heater 52a is electrically connected to the control unit 70, and its driving system is controlled by the control unit 70. The nozzle moving mechanism 53 includes a movable arm 53a and an arm moving mechanism 53b. The movable arm 53a is horizontally supported by the arm moving mechanism 53b, and holds the supply nozzle 52 at one end. The arm moving mechanism 53b holds the end of the movable arm 53a opposite to the supply nozzle 52, and makes the movable arm 53a swing in the horizontal direction along the processed surface Wa of the substrate W on the table 30, and Make it rise and fall in the vertical direction. The arm moving mechanism 53b is electrically connected to the control unit 70, and its driving system is controlled by the control unit 70. For example, the nozzle moving mechanism 53 makes the supply nozzle 52 "a supply position directly above the outer peripheral end A1 of the substrate W on the table 30" and "avoid from above the table 30 so that the substrate W can be carried in." And move out between the standby position". In addition, the supply nozzle 52 shown in FIG. 1 is located at the supply position. The heating part 60 is installed around the table 30 so as not to interfere with the rotation of the table 30. The heating part 60 heats the thermoplastic resin applied to the outer peripheral end A1 of the substrate W in a non-contact manner in order to improve the adhesion of the thermoplastic resin to the substrate W. As the heating section 60, a heater that is heated by hot air, a heater that is heated by radiant heat, or the like is used. The heating part 60 is electrically connected to the control part 70, and its driving system is controlled by the control part 70. The picture shows the heater caused by hot air. The control section 70 is provided with a microcomputer for centralized control of each section, and a memory section (not shown) for storing substrate processing information and various programs related to substrate processing. This control unit 70 is based on substrate processing information and various programs to perform the rotation of the table 30 caused by the rotating mechanism 40, the supply of thermoplastic resin by the resin supply unit 50, and the heating unit 60. To control the heating action, etc. (including various processing related to the control). Here, as shown in FIG. 2, the outer peripheral end portion A1 of the substrate W is formed by the outer peripheral area A1a of the upper surface of the substrate W (the processed surface Wa) and the outer peripheral surface of the substrate W (the end surface of the outer periphery of the substrate W). ) A1b and the outer peripheral area A1c of the lower surface of the substrate W. In addition, as shown in FIGS. 2 and 3, on the upper surface of the substrate W, there is an etching target region R1 that is the target of the etching process in the etching process. The etching target area R1 is the area on the upper surface of the substrate W after the outer peripheral area A1a of the upper surface of the substrate W is removed. The area other than the etching target area R1 is a non-etching target area that is not the target of the etching process during the etching process. In FIG. 3, the etching target area R1 is a circular area. The upper outer peripheral area A1a of the substrate W and the lower outer peripheral area A1c of the substrate W (refer to FIG. 2) are respectively directed from the outer periphery of the substrate W. The inner side (the center side of the substrate W) has a ring-shaped area with a specific width of several mm (for example, 4 mm or less). For example, the supply nozzle 52 is positioned directly above the outer peripheral surface A1b of the substrate W on the stage 30 as shown in FIG. 2 and supplies the softened thermoplastic resin B1 to the upper portion of the outer peripheral surface A1b. In addition, the softened thermoplastic resin B1 has the desired viscosity. Therefore, the thermoplastic resin B1 supplied to the upper portion of the outer peripheral surface A1b of the substrate W covers the outer peripheral surface A1b of the substrate W The way gradually expands downward. If the thermoplastic resin B1 is discharged from the supply nozzle 52, it will gradually harden from the surface layer. If it adheres to the substrate W, the temperature of the thermoplastic resin B1 decreases sharply and adheres to the substrate W. Part of the thermoplastic resin hardens rapidly. The temperature of the substrate W on the stage 30 is reduced due to the airflow in the processing chamber 20 (for example, the airflow flowing from above to below). Therefore, if the thermoplastic resin B1 discharged from the supply nozzle 52 adheres to the substrate W, the temperature of the thermoplastic resin B1 tends to drop sharply. When the resin is supplied, since the stage 30 is rotated by the rotating mechanism 40, the substrate W on the stage 30 is also in a rotating state. Therefore, the thermoplastic resin B1 discharged from the supply nozzle 52 is sequentially attached along the outer peripheral surface A1b of the substrate W in response to the rotation of the substrate W. By this, as shown in FIG. 3, the entire surface of the outer peripheral surface A1b of the substrate W is coated with the thermoplastic resin B1, and the entire surface of the outer peripheral surface A1b of the substrate W is covered with the thermoplastic resin B1 ( Resin coating is complete). On the other hand, the thermoplastic resin B1 coated on the outer circumferential surface A1b of the substrate W hardens due to the decrease in temperature. After that, when the stage 30 is rotating, if the thermoplastic resin B1 in the hardened state is heated by the heating part 60, the thermoplastic resin B1 is softened and adheres to the outer peripheral surface A1b of the substrate W. By this, the adhesion of the thermoplastic resin B1 to the substrate W is improved. At this time, the heating portion 60 is the thermoplastic resin B1 coated on the outer peripheral surface A1b of the substrate W, from the surface side where the thermoplastic resin B1 is not in contact with the outer peripheral surface A1b of the substrate W (see FIG. 2) It is heated instantaneously (for example, several seconds), and the thermoplastic resin B1 is softened. Here, the heating temperature of the thermoplastic resin B1 caused by the heating part 60 is limited to a temperature that maintains the viscosity of the thermoplastic resin B1 so as not to cause the thermoplastic resin B1 to sag from the outer peripheral surface A1b of the substrate W The degree of viscosity is below the temperature. In addition, although a part of the thermoplastic resin material will be wasted, even if it becomes a temperature that causes a part of the thermoplastic resin B1 to sag from the outer peripheral surface A1b of the substrate W, as long as it can finally be If the required thickness of thermoplastic resin B1 is applied to the outer peripheral surface A1b, the heating temperature may be used as the limiting temperature. The limit temperature varies depending on the type of thermoplastic resin B1 used, etc., and is experimentally determined in advance. The resin-coated substrate W is carried out from the processing chamber 20 by a conveying device (not shown) equipped with a robot, etc., and is carried into the etching process of an individual different from the substrate processing apparatus 10 In the device (not shown), it is processed with an etching solution (details will be described later). In addition, when the supply nozzle 52 is positioned at the supply position, the vertical separation distance between the supply nozzle 52 and the substrate W on the stage 30 is set to a specific distance. This specific distance is determined experimentally in advance according to the type of thermoplastic resin B1 used (the viscosity in a softened state), together with the amount of thermoplastic resin supplied and the number of rotations of the table 30, etc. come out. That is, the specific distance, the supply amount of the thermoplastic resin, and the number of rotations of the table 30, etc. are such that the thermoplastic resin B1 discharged from the supply nozzle 52 covers only the outer peripheral surface A1b of the substrate W and hardens Way, and set in advance. In addition, the heating temperature caused by the heating section 60 is the same as the heating temperature caused by the heating section 60 described earlier, and the heating time caused by the heating section 60 also depends on the type of thermoplastic resin B1 used (the viscosity in the softened state) , So as not to soften the thermoplastic resin B1 coated on the outer peripheral surface A1b of the substrate W and sag from the outer peripheral surface A1b of the substrate W, or even if it sags, it can finally be at the outer peripheral surface A1b of the substrate W The method of applying the thermoplastic resin B1 of the required thickness is experimentally determined and set in advance. (Substrate Processing Process) Next, the flow of the substrate processing process performed by the aforementioned substrate processing apparatus 10 will be described. In this substrate processing process, the control section 70 controls the actions of each section. As shown in FIG. 4, in step S1, the unprocessed substrate W is moved into the processing chamber 20 by a robot and placed on the table 30, and the substrate W that has been placed is borrowed It is adsorbed and held by the stage 30. The robot hand is avoided from the processing chamber 20 after the substrate W is placed. In addition, when the substrate W is carried in, the supply nozzle 52 is positioned at the standby position. If the aforementioned robot is avoided from the processing chamber 20, in step S2, the rotation of the table 30 is started by the rotating mechanism 40, and in step S3, the softened thermoplastic resin is applied to the table 30 At the outer peripheral end A1 of the upper substrate W. Specifically, it is carried out by the following processing procedure. The supply nozzle 52 is moved from the standby position to the supply position by the nozzle moving mechanism 53. If the supply nozzle 52 reaches the supply position, the supply nozzle 52 is positioned directly above the outer peripheral surface A1b of the substrate W on the stage 30 (refer to FIG. 2). If the rotation number of the stage 30 becomes a specific rotation number (for example, 10rpm), the softened thermoplastic resin B1 is discharged toward the upper part of the outer peripheral surface A1b of the substrate W. The thermoplastic resin B1 discharged from the supply nozzle 52 is sequentially adhered along the outer peripheral surface A1b of the substrate W in response to the rotation of the substrate W. However, for example, if the attachment start point of the thermoplastic resin B1 at the substrate W surrounds one round, the thermoplastic resin B1 is coated on the entire surface of the outer peripheral surface A1b of the substrate W (see FIG. 3), and the stage 30 The entire outer peripheral surface A1b of the upper substrate W is covered with the thermoplastic resin B1. The thickness of the thermoplastic resin B1 coated on the outer peripheral surface A1b is, for example, 0.5 to 3 mm. In addition, the thermoplastic resin B1 coated on the outer peripheral surface A1b is in a hardened state due to a decrease in temperature. If the resin application is completed and the ejection is stopped, the supply nozzle 52 moves from the application position to the standby position, and in step S4, the heating operation of the heating unit 60 is started. The thermoplastic resin B1 coated on the outer peripheral surface A1b of the substrate W is heated by the heating unit 60. This heating is performed in response to the rotation of the substrate W to cover the entire outer peripheral surface A1b of the substrate W for a specific time. After a certain time has passed, the heating operation of the heating unit 60 is stopped. With this heating operation, the cured thermoplastic resin B1 coated on the outer peripheral surface A1b of the substrate W is softened again, and then is next to the outer peripheral surface A1b of the substrate W, so it is opposite to the thermoplastic resin B1 of the substrate W. The closeness of the system is improved. After that, in a state where the adhesion is improved, the thermoplastic resin B1 is cured (recured). If this resin heating ends, in step S5, the rotation of the table 30 is stopped. If the aforementioned supply nozzle 52 returns to the standby position and the rotation of the stage 30 is stopped, then in step S6, the resin-coated substrate W is removed from the stage 30 by the aforementioned robot (not shown) It is carried out to the outside of the processing chamber 20, and is carried in to an etching processing apparatus (not shown). After that, by the etching processing device, the processed surface Wa of the substrate W is processed by the etching liquid. In the etching process, the etching liquid is supplied to the vicinity of the center of the processed surface Wa of the substrate W rotating at 50 rpm, for example, and the supplied etching liquid is caused by the centrifugal force caused by the rotation of the substrate W It expands to the entire surface Wa of the substrate W to be processed. By this, the liquid film of the etching liquid is formed on the processed surface Wa of the substrate W, and the processed surface Wa of the substrate W is processed by the etching liquid. At this time, the thermoplastic resin B1 in the hardened state functions as a protective material that protects the outer peripheral surface A1b of the substrate W from the etching liquid. The substrate W after the etching process is sequentially subjected to a cleaning process using a cleaning solution and a drying process caused by the high-speed rotation of the substrate W in the etching processing apparatus. In this substrate processing process, the softened thermoplastic resin B1 is coated on the outer peripheral surface A1b of the outer peripheral end A1 of the substrate W on the table 30, and the entire surface of the outer peripheral surface A1b is in a hardened state Covered with thermoplastic resin B1. As a result, in the etching process, which is a subsequent process, the cured thermoplastic resin B1 functions as a protective material that protects the outer peripheral surface A1b of the substrate W from the etching solution. Therefore, the substrate W The erosion of the outer peripheral surface A1b by the etchant is suppressed, and it is possible to suppress the decrease in the diameter of the substrate W, that is, the reduction in the size of the substrate. As a result, it is possible to obtain an element wafer of a desired size even in the outer peripheral portion of the substrate W, and therefore, it is possible to suppress the occurrence of the loss of the element wafer. In addition, it becomes possible to carry out the substrate transfer in the subsequent process such as the transfer by the robot in the subsequent process, and the yield can be improved. Here, the thermoplastic resin B1 discharged from the supply nozzle 52 gradually begins to harden from the surface layer. If the thermoplastic resin B1 discharged from the supply nozzle 52 adheres to the substrate W, it heats up. The temperature of the plastic resin B1 drops sharply. For these reasons, the adhesiveness of the thermoplastic resin B1 to the substrate W tends to be lower. Therefore, by heating and softening the thermoplastic resin B1 in the cured state applied to the outer peripheral surface A1b of the substrate W by the heating part 60, the thermoplastic resin B1 can be reliably adhered to the substrate W. , And the adhesion of the thermoplastic resin B1 to the substrate W can be improved. After that, in a state where the adhesion is improved, the thermoplastic resin B1 is cured. As a result, in the etching process, it becomes possible to peel off the cured thermoplastic resin B1 due to the flow of the etching solution or centrifugal force caused by the rotation, or due to the gap between the substrate W and the thermoplastic resin B1. Poor adhesion causes the etching solution to flow into and reach the outer peripheral surface A1b, and it is possible to suppress the reduction in the size of the substrate more reliably. In addition, in this embodiment, the heating by the heating unit 60 may be configured not to be performed while the substrate W is being coated with the thermoplastic resin B1, but to be performed after the coating. Since the softening of the thermoplastic resin B1 during coating is suppressed, the coating width or film thickness of the thermoplastic resin B1 coated on the substrate W requires particularly high accuracy or uniformity. In this case, it is better to start heating after coating. As described above, according to the first embodiment, by supplying the softened thermoplastic resin to the outer peripheral end A1 of the substrate W on the stage 30, for example, to the outer peripheral surface A1b of the substrate W, The outer peripheral surface A1b is covered with a cured thermoplastic resin B1. Furthermore, by heating and softening the cured thermoplastic resin B1 covering the outer peripheral surface A1b of the substrate W, since the thermoplastic resin B1 is surely attached to the substrate W, it is possible to increase the heat relative to the substrate W. Adhesion of plastic resin B1 is improved. Therefore, in the etching process, the thermoplastic resin B1 covering the outer peripheral surface A1b of the substrate W can be peeled off, or the etching solution can penetrate due to poor adhesion between the substrate W and the thermoplastic resin B1. It is suppressed that the outer peripheral surface A1b of the substrate W is reliably protected by the thermoplastic resin B1 in the hardened state. With this, it is possible to suppress the erosion of the outer peripheral surface A1b of the substrate W by the etching solution, and it is possible to suppress the reduction in the size of the substrate. (Other examples of resin coating) The aforementioned example of resin coating by the supply nozzle 52 is taken as the first example, and as another example of resin coating. For the second and third examples, refer to FIGS. 5 to 7 for explanation. As a second example, as shown in FIG. 5, the supply nozzle 52 is positioned directly above the outer peripheral area A1a of the substrate W on the stage 30, for example, at the outer peripheral area A1a and located close to the outer side of the substrate W. Immediately above, and to the outer peripheral area A1a, a softened thermoplastic resin B1 is supplied. In the second example, compared to the first example, the supply amount of the thermoplastic resin B1 in a softened state is larger. The thermoplastic resin B1 supplied to the outer peripheral area A1a of the substrate W gradually expands so as to cover the outer peripheral area A1a and further cover the outer peripheral surface A1b connected to the outer peripheral area A1a. In this resin supply, since the substrate W on the stage 30 rotates together with the stage 30, the thermoplastic resin B1 discharged from the supply nozzle 52 is along the outer peripheral area A1a of the substrate W in response to the rotation of the substrate W And the outer peripheral surface A1b is attached in order. And, for example, if the attachment start point of the thermoplastic resin B1 at the substrate W is surrounded by one circle, as shown in FIG. 6, the entire outer peripheral area A1a of the substrate W and the entire outer peripheral surface A1b are thermoplastic The resin B1 is coated, and the entire surface of the outer peripheral area A1a and the outer peripheral surface A1b of the substrate W are covered with the thermoplastic resin B1. As a third example, as shown in FIG. 7, the supply nozzle 52 is positioned directly above the outer peripheral area A1a of the substrate W on the stage 30, for example, at the outer peripheral area A1a, and is positioned at a position higher than that of the second example. Just above the position closer to the inner side of the substrate W, the softened thermoplastic resin B1 is supplied to the outer peripheral area A1a. In the third example, compared with the second example, the supply amount of the thermoplastic resin B1 in a softened state is less. The thermoplastic resin B1 supplied to the outer peripheral area A1a of the substrate W gradually expands so as to cover the outer peripheral area A1a of the substrate W. In this resin supply, since the substrate W on the stage 30 rotates together with the stage 30, the thermoplastic resin B1 discharged from the supply nozzle 52 is along the outer peripheral area A1a of the substrate W in response to the rotation of the substrate W To attach in order. However, for example, if the attachment start point of the thermoplastic resin B1 on the substrate W surrounds one round, the thermoplastic resin B1 is coated on the entire surface of the outer peripheral area A1a of the substrate W, and the outer peripheral area A1a of the substrate W The entire surface is covered by thermoplastic resin B1. In the aforementioned second and third examples, the same as the aforementioned first example can suppress the reduction of the substrate size. In addition, the vertical separation distance between the supply nozzle 52 and the substrate W on the stage 30 when the thermoplastic resin B1 is supplied, the supply position, the supply amount, the number of rotations of the stage 30, etc., are experimentally determined in advance. Regarding this point, it is the same as the first example. In addition, in the second and third examples, the thermoplastic resin B1 applied on the substrate W is heated by the heating unit 60 to soften it a little, and it is the same as the first example. In the third example, the entire surface of the outer peripheral surface A1b of the substrate W is not covered by the thermoplastic resin B1, but the entire surface of the outer peripheral area A1a of the substrate W is covered by the thermoplastic resin B1 (see FIG. 7). In the etching process, the etching liquid supplied to the vicinity of the center of the processed surface Wa of the rotating substrate W is expanded to the processed surface Wa of the substrate W by the centrifugal force caused by the rotation of the substrate W All. This expanded etching solution is caused by the centrifugal force caused by the rotation of the substrate W to scatter away from the substrate W. However, at this time, due to the hardened heat attached to the outer peripheral area A1a of the substrate W For the plastic resin B1, the scattering direction of the etching solution is deviated upward with respect to the horizontal plane. Therefore, the inflow of the etching liquid to the outer peripheral surface A1b of the substrate W is suppressed. By this, as in the first example described above, it is possible to suppress the reduction in the size of the substrate. In addition, the third example is preferably used when the outer peripheral surface A1b or the lower surface of the substrate W is coated with SiN or SiO 2 . However, preferably, in order to reliably protect the outer circumferential surface A1b of the substrate W from etching liquid, the entire outer circumferential surface A1b is completely covered by the thermoplastic resin B1. In addition, the control unit 70, in the resin coating method of the first to third examples described above, is based on the supply position where the thermoplastic resin is supplied to the substrate W on the stage 30 of the supply nozzle 52, that is, for the thermoplastic resin. The nozzle moving mechanism 53 is controlled by changing the position on the substrate W to which the resin is supplied. For example, when the control unit 70 causes the supply nozzle 52 to supply the thermoplastic resin B1 to the outer peripheral surface A1b of the substrate W on the stage 30 (the first example), and to the outer peripheral area above the substrate W on the stage 30 When the thermoplastic resin B1 is applied to the A1a and the outer peripheral surface A1b (the second example), the nozzle moving mechanism 53 is controlled by changing the supply position of the thermoplastic resin B1 to the substrate W on the table 30. Here, for example, in the aforementioned third example, when the heating by the heating portion 60 is not performed after the thermoplastic resin B1 is applied to the substrate W, as shown in FIG. 8, In the thermoplastic resin B1 supplied to the processed surface Wa of the substrate W, there may be a non-bonded portion C1 that is a portion where the thermoplastic resin B1 does not contact the substrate W. This unbonded portion C1 occurs because the start point B1a and the end point B1b of the thermoplastic resin B1 overlap each other. The starting point (attachment start point) B1a of the thermoplastic resin B1 is a position directly below the position where the supply nozzle 52 starts supplying the thermoplastic resin to the substrate W (supply start position), and the end point (attachment) of the thermoplastic resin B1 End point) B1b is a position directly below the position where the supply nozzle 52 stops the supply of the thermoplastic resin to the substrate W (supply stop position). If the non-bonded portion C1 of the thermoplastic resin B1 is heated by the heating portion 60, the non-bonded portion C1 is softened and contacts the processed surface Wa of the substrate W for bonding. In the etching process, the etching liquid supplied to the vicinity of the center of the processed surface Wa of the rotating substrate W is expanded to the processed surface Wa of the substrate W by the centrifugal force caused by the rotation of the substrate W All. However, if there is the aforementioned unbonded portion C1, the etching solution flows into the outer peripheral surface A1b of the substrate W from the unbonded portion C1, and the outer peripheral surface A1b of the substrate W is corroded by the etching solution. Therefore, by heating the unbonded portion C1 of the thermoplastic resin B1 with the heating portion 60, the unbonded portion C1 is softened and adhered to the substrate W. Therefore, in the thermoplastic resin B1 supplied to the processed surface Wa of the substrate W, the unbonded portion C1 can be eliminated. That is, even if the unbonded portion C1 is generated at the time of application of the thermoplastic resin B1, the heating portion 60 can heat at least the unbonded portion C1 to eliminate the unbonded portion C1 and Make repairs. With this, since the influx of the etching liquid into the outer peripheral surface A1b of the substrate W is suppressed, the reduction in the size of the substrate can be reliably suppressed. In addition, when there is no problem of adhesion in the part other than the non-adhesive part C1 of the thermoplastic resin B1, it is only necessary to eliminate the non-adhesive part C1. In this regard, for example, it may be configured such that the rotation of the substrate W is stopped at a position where the unbonded portion C1 faces the heating portion 60, and the unbonded portion C1 is heated by the heating portion 60 to soften it. In addition, since the supply start position and the supply stop position caused by the supply nozzle 52 are set in advance, it is possible to communicate with the heating section in the unbonded portion C1 based on the supply start position and supply stop position. The rotation of the substrate W is stopped at the position 60 opposite. It may be configured such that the heating unit 60 can be moved in a direction approaching and away from the outer peripheral end A1 of the substrate W, for example, in the horizontal direction. When it takes time for the heating part 60 to reach a specific temperature, the heating part 60 is heated and driven in advance at a position away from the substrate W, and when the unbonded part C1 is heated, The heating part 60 is moved so that it may approach the non-adhesive part C1. (Other example of heating section arrangement) The above-mentioned arrangement of the heating section 60 is taken as the first example, and as another example of arrangement, the second example and the third example will be described with reference to FIGS. 9 and 10. As a second example, as shown in FIG. 9, the heating section 60 is provided on the stage 30 below the outer peripheral surface A1b of the substrate W. This heating part 60 directly heats the thermoplastic resin B1 coated on the outer peripheral surface A1b of the substrate W on the stage 30. By this, the thermoplastic resin B1 is directly heated and softened as a whole, and the adhesion of the thermoplastic resin B1 to the substrate W can be improved. As a third example, as shown in FIG. 10, the heating section 60 is provided on the stage 30 below the outer peripheral area A1c of the substrate W. The heating unit 60 heats the substrate W in a non-contact manner, thereby indirectly heating the thermoplastic resin B1 coated on the outer peripheral surface A1b of the substrate W on the stage 30. By this, only a part of the thermoplastic resin B1 in contact with the substrate W (the part on the substrate W side) is softened, and the adhesion of the thermoplastic resin B1 to the substrate W can be improved. In addition, the heating section 60 is provided as long as it is directly or indirectly, or can be directly or indirectly heated, to the thermoplastic resin B1 at the outer peripheral end A1 of the substrate W coated on the stage 30 For example, it can also be placed above the outer peripheral end A1 of the substrate W on the table 30, and it can also be placed above the outer peripheral end A1 of the substrate W on the table 30 , Below and at any one or all of the side. For example, when the heating unit 60 is installed above and on the side, below and on the side, or when it is installed above, below, and on the side, the heating unit 60 (by each heating unit 60), except for the thermoplastic resin B1 applied to the outer peripheral surface A1b of the substrate W on the stage 30 as in the first example, but the thermoplastic resin B1 does not interact with the substrate W In addition to heating the surface side (partial side) in contact with the outer peripheral surface A1b, the substrate W itself is also heated as in the second and third examples. <Second Embodiment> With reference to Fig. 11 and Fig. 12, the second embodiment will be described. In addition, in the second embodiment, the differences (heating section and substrate processing process) from the first embodiment will be described, and other descriptions will be omitted. As shown in FIG. 11, in the second embodiment, the heating unit 60 is a halogen lamp heater or a mica heater (for example, a ring-shaped mica heater) that heats the substrate W by radiant heat. And is set directly above the stage 30. The heating section 60 heats the substrate W in a non-contact manner before the application of the thermoplastic resin B1, and applies the substrate W to the thermoplastic resin B1 applied on the outer peripheral surface A1b of the substrate W. By conducting heat, the thermoplastic resin B1 at the outer peripheral end A1 (for example, the outer peripheral surface A1b) of the substrate W coated on the stage 30 is indirectly heated. (Substrate Processing Process) Next, the flow of the substrate processing process performed by the aforementioned substrate processing apparatus 10 will be described. In this substrate processing process, the control section 70 controls the actions of each section. As shown in FIG. 12, in step S11, the same as in the first embodiment, the unprocessed substrate W is carried into the processing chamber 20 by a robot hand and placed on the table 30. The mounted substrate W is sucked and held by the stage 30. The robot hand is avoided from the processing chamber 20 after the substrate W is placed. In addition, when the substrate W is carried in, the supply nozzle 52 is positioned at the standby position. If the aforementioned robotic hand is avoided from the processing chamber 20, in step S12, the rotation of the table 30 is started by the rotation mechanism 40, and the heating operation of the heating unit 60 is started. By this heating, the temperature of the substrate W rises to a specific temperature (for example, 150° C.) or higher. If the temperature of the substrate W becomes higher than the specific temperature, in step S13, the softened thermoplastic resin B1 is applied to the outer peripheral end A1 of the substrate W on the stage 30. Specifically, it is carried out by the following processing procedure. As in the first embodiment, the supply nozzle 52 is moved from the standby position to the supply position by the nozzle moving mechanism 53. If the supply nozzle 52 reaches the supply position, the supply nozzle 52 is positioned directly above the outer peripheral surface A1b of the substrate W on the stage 30. If the rotation number of the stage 30 becomes a specific rotation number (for example, 10 rpm), it is The softened thermoplastic resin B1 is discharged toward the upper portion of the outer peripheral surface A1b of the substrate W. The thermoplastic resin B1 discharged from the supply nozzle 52 is sequentially adhered along the outer peripheral surface A1b of the substrate W in response to the rotation of the substrate W. However, for example, if the adhesion start point of the thermoplastic resin B1 at the substrate W surrounds one circle, the thermoplastic resin B1 is coated on the entire surface of the outer peripheral surface A1b of the substrate W, and the substrate W on the stage 30 The entire surface of the outer peripheral surface A1b is covered with the thermoplastic resin B1. The thickness of the thermoplastic resin B1 coated on the outer peripheral surface A1b is, for example, 0.5 to 3 mm. In this coating operation, since the temperature of the substrate W becomes higher than the specified temperature, the substrate W conducts heat to the thermoplastic resin B1 coated on the outer peripheral surface A1b of the substrate W, and therefore, it is in contact with the outer peripheral surface A1b of the substrate W. The sudden drop in the temperature of the thermoplastic resin B1 with which A1b is in contact is suppressed, and the surface layer of the thermoplastic resin B1 coated on the outer peripheral surface A1b of the substrate W is also softened. Therefore, the situation where the thermoplastic resin B1 comes into contact with the substrate W and hardens immediately is suppressed, and it is reliably adhered to the outer peripheral surface A1b of the substrate W. By this, the adhesion of the thermoplastic resin B1 to the substrate W is improved. If the aforementioned resin coating is completed and the ejection is stopped, the supply nozzle 52 moves from the coating position to the standby position. In step S14, the rotation of the table 30 is stopped, and the heating operation of the heating unit 60 is stopped. In addition, the system can also be configured such that when the adhesion start point of the thermoplastic resin B1 at the substrate W is made one circle and the ejection of the thermoplastic resin B1 from the supply nozzle 52 is stopped, the The heating of the substrate W is continued for a specific time by the heating unit 60. The so-called specific time here is, for example, the time at which the non-bonded portion C1 shown in FIG. 8 can be repaired even if the non-bonded portion C1 shown in FIG. 8 is generated. This specific time may be shorter than the heating time caused by the heating unit 60 in the first embodiment, or it may be the time for the table 30 to rotate one revolution. If the heating operation by the heating part 60 is stopped, the thermoplastic resin B1 coated on the outer peripheral surface A1b becomes a hardened state due to the decrease in temperature. If the aforementioned supply nozzle 52 returns to the standby position and the rotation of the table 30 is stopped, in step S15, the same as in the first embodiment, the resin-coated substrate W is removed from the table 30 by the aforementioned machine It is carried out to the outside of the processing chamber 20 by hand (not shown), and is carried into an etching processing apparatus (not shown). After that, as in the first embodiment, by the etching processing apparatus, the processed surface Wa of the substrate W is processed by the etching liquid. In this substrate processing process, as in the first embodiment, the thermoplastic resin in a softened state is coated on the outer peripheral surface A1b of the outer peripheral end portion A1 of the substrate W on the table 30, and the outer peripheral surface The entire surface of A1b is covered by the hardened thermoplastic resin B1. As a result, in the etching process, which is a subsequent process, the cured thermoplastic resin B1 functions as a protective material that protects the outer peripheral surface A1b of the substrate W from the etching solution. Therefore, the substrate W The erosion of the outer peripheral surface A1b by the etching solution is suppressed, and the reduction in the size of the substrate can be suppressed. As a result, it is possible to obtain an element wafer of a desired size even in the outer peripheral portion of the substrate W, and therefore, it is possible to suppress the occurrence of the loss of the element wafer. In addition, it becomes possible to carry out the substrate transfer in the subsequent process such as the transfer by the robot in the subsequent process, and the yield can be improved. In addition, by heating the substrate W before supplying the thermoplastic resin B1 to the processed surface Wa of the substrate W (from before the supply), if the thermoplastic resin B1 discharged from the supply nozzle 52 and the substrate When the outer peripheral surface A1b of W is in contact, heat is conducted from the substrate W to the thermoplastic resin B1. Therefore, a sudden drop in the temperature of the thermoplastic resin B1 in contact with the outer peripheral surface A1b of the substrate W is suppressed, and the surface layer of the thermoplastic resin B1 coated on the outer peripheral surface A1b of the substrate W is also softened, so , The system can suppress the situation that the thermoplastic resin B1 comes into contact with the substrate W and hardens immediately. Therefore, by heating the substrate W, the curing of the thermoplastic resin B1 is delayed and the thermoplastic resin B1 is reliably adhered to the outer peripheral surface A1b of the substrate W. Therefore, the substrate W can be opposed to the thermoplastic resin B1 Improved adhesion. After that, in a state where the adhesion is improved, the thermoplastic resin B1 is cured. As a result, in the etching process, the thermoplastic resin B1 covering the outer peripheral surface A1b of the substrate W can be peeled off due to the flow of the etching solution or centrifugal force caused by the rotation, or due to the substrate W and the thermoplastic resin B1. The poor adhesion between the resins B1 causes the etching solution to flow into and reach the outer peripheral surface A1b, and the reduction in the size of the substrate can be suppressed more reliably. As described above, according to the second embodiment, the same effect as the first embodiment can be obtained. In addition, the substrate W is heated in advance before the application of the thermoplastic resin B1, and the substrate W conducts heat to the thermoplastic resin B1 applied on the outer peripheral surface A1b of the substrate W, thereby applying heat to the substrate W. The thermoplastic resin B1 at the outer peripheral surface A1b of W is heated indirectly. By this, the temperature of the thermoplastic resin B1 discharged from the supply nozzle 52 and attached to the substrate W is suppressed from rapidly decreasing, and the surface layer of the thermoplastic resin B1 applied on the outer peripheral surface A1b of the substrate W It is also softened. Therefore, the curing of the thermoplastic resin B1 is delayed, and the thermoplastic resin B1 is surely adhered to the substrate W. Therefore, the adhesion of the thermoplastic resin B1 to the substrate W is improved. Therefore, in the etching process, it is possible to peel off the thermoplastic resin B1 covering the outer peripheral surface A1b of the substrate W, or due to poor adhesion between the substrate W and the thermoplastic resin B1, the etching solution flows in and reaches the outer periphery. The situation at the surface A1b is suppressed, and the outer peripheral surface A1b of the substrate W is reliably protected by the cured thermoplastic resin B1. With this, it is possible to suppress the erosion of the outer peripheral surface A1b of the substrate W by the etching solution, and it is possible to suppress the reduction in the size of the substrate. <Third Embodiment> Referring to Fig. 13 and Fig. 14, the third embodiment will be described. In addition, in the third embodiment, the differences from the first embodiment (other examples of resin coating) will be described, and other descriptions will be omitted. The resin coating of the third embodiment is basically the same as the third example of the resin coating of the first embodiment. However, the softened thermoplastic resin B1 is placed along the periphery of the substrate W at the peripheral area A1a of the substrate W. The number of circular coatings from the outer periphery is different. In the third example of the resin coating of the first embodiment, the softened thermoplastic resin B1 is applied to the width (width in the radial direction) of the outer peripheral area A1a of the substrate W to make one circumference of the substrate W Circular coating. On the other hand, in the third embodiment, as shown in FIG. 13, the thermoplastic resin B1 is used as the substrate W with a specific width narrower than the width of the outer peripheral area A1a of the substrate W. The "circular coating for one week" is repeated a specified number of times (2 times in FIG. 13). The specific width (coating width) is preset by dividing the width of the outer peripheral area A1a of the substrate W by the number of coating times. For example, when the width of the outer peripheral area A1a of the substrate W is 4 mm and the number of coating times is 2 times, the specific width is 2 mm. In the substrate processing process, the supply nozzle 52 is as shown in FIG. 13, and the softened thermoplastic resin B1 is made on the inner side (the center side of the substrate W) of the outer peripheral area A1a of the substrate W on the table 30 The substrate W is applied in a ring shape for one revolution, and then moved in the radial direction of the substrate W toward the outer side of the outer peripheral area A1a of the substrate W, and the softened thermoplastic resin B1 and the inner side are coated on the outer side The thermoplastic resin B1 is adjacent to each other and is applied in a ring shape for one round of the substrate W. As a result, the outer peripheral area A1a of the substrate W is coated with the thermoplastic resin B1 in a plurality of adjacent rings (two rings in FIG. 13), and is coated The thermoplastic resin B1 is hardened on the outer peripheral area A1a of the substrate W. After that, the heating operation of the heating unit 60 is performed for a specific time. The thermoplastic resin B1 in the hardened state on the outer peripheral area A1a of the substrate W is softened again by the aforementioned heating action, and is integrated into a single ring as shown in Fig. 14 (in Fig. 14 Is a circular ring), and is next to the outer peripheral area A1a of the substrate W. The adhesion of the thermoplastic resin B1 with respect to the substrate W is improved, and if the heating operation is stopped, the thermoplastic resin B1 is cured again. In addition, the supply of the thermoplastic resin B1 in the softened state caused by the supply nozzle 52 as described above (for example, the supply start timing and the supply stop timing) or the relative movement between the supply nozzle 52 and the substrate W (for example, the substrate W The rotation action), etc., are controlled by the control unit 70. Here, as shown in FIG. 13, when the softened thermoplastic resin B1 is applied in a ring shape with a certain width for one week of the substrate W, the thermoplastic resin B1 is applied in one In the ring (circle), the end point (attachment end point) B1b is coated so that it exceeds the start point (attachment start point) B1a, and an overlap portion (overlap portion) B1c is formed. If the end point B1b does not exceed the start point B1a and only the start point B1a is applied, the outer peripheral area A1a of the substrate W around the start point B1a will not be covered by the thermoplastic resin B1. There is a place where the outer peripheral area A1a of the substrate W is exposed. If etching is performed in a state where a part of the outer peripheral area A1a of the substrate W is exposed, the exposed part will be etched (unnecessary etching). In order to avoid this unnecessary etching, coating is carried out in such a way that the end point B1b exceeds the start point B1a as described above. In addition, if the discharge amount per unit time from the supply nozzle 52 increases, it becomes difficult to control the width and thickness of the thermoplastic resin B1 applied to the substrate W. Therefore, in order to avoid unnecessary etching, if the coating width is widened, it is necessary to increase the length of the overlap portion B1c. There is a proportional relationship between the coating width and the length of the overlap portion B1c. However, if the coating is applied in a ring with the end point B1b exceeding the starting point B1a, the overlapped portion B1c will increase the amount of the thermoplastic resin B1 compared to other portions (non-overlapped portions). Although there is no problem if this amount is suppressed, but if the thermoplastic resin B1 in a softened state is applied to the substrate W in a ring shape with the width of the outer peripheral area A1a of the substrate W Generally, the thermoplastic resin B1 in the overlapping portion B1c increases, and when the heating operation of the heating portion 60 softens again, the thermoplastic resin B1 in the overlapping portion B1c expands and enters the etching target area In R1, a part of the etching target region R1 may be covered by the thermoplastic resin B1. If the etching process is performed in this state, an unetched place (unetched) will be generated in the etching target region R1. Therefore, in this embodiment, "the thermoplastic resin B1 is applied to the substrate W in a ring shape with a specific width narrower than the width of the outer peripheral area A1a of the substrate W for one week of the substrate W." A specific number of iterations. In this case, even if the coating is performed in a way that the end point B1b exceeds the starting point B1a at one ring, compared to the aforementioned width of the outer peripheral area A1a of the substrate W as the amount of one week of the substrate W In the case of ring-shaped coating, since the coating width for one round is narrowed, the length of the overlapping portion B1c can be shortened, and the amount of the thermoplastic resin B1 in the overlapping portion B1c can be suppressed. By this, when re-softening caused by the heating operation of the heating part 60, it is possible to prevent the thermoplastic resin B1 from spreading and entering into the etching target region R1, and it is possible to prevent the thermoplastic resin B1 from spreading and entering the etching target region R1. The coating width becomes uniform. This is because, compared to the aforementioned case where the width of the outer peripheral area A1a of the substrate W is used to coat the substrate W in a ring shape, it is possible to discharge per unit time from the supply nozzle 52 As the amount is reduced, the width and thickness of the thermoplastic resin B1 coated on the substrate W can be easily controlled. Therefore, it is possible to suppress the exposure of a part of the outer peripheral area A1a of the substrate W to avoid unnecessary etching, and also to prevent the heat from being softened again by the heating action of the heating unit 60 The expansion of the plastic resin B1 and entering into the etching target region R1 is suppressed, and the unetched situation can be avoided. Therefore, the quality of the substrate W caused by the aforementioned unnecessary etching or unetching can be improved. Reduce for inhibition. In addition, the length of the overlapping portion B1c of each ring, that is, the amount of overlap (amount of overlap: the length extending so that the end point B1b exceeds the starting point B1a) is the same, but the system is not limited to this, and may be Different. For example, the amount of overlap is within a range that can suppress exposure of the outer peripheral area A1a of the substrate W around the starting point B1a, in order to avoid the aforementioned expansion of the thermoplastic resin B1 caused by the overlap portion B1c. The resulting non-etching should be as little as possible. As explained above, according to the third embodiment, the same effect as the first embodiment can be obtained. In addition, the supply nozzle 52 has a plurality of rings (for example, a concentric ring) extending along the outer circumference of the substrate W and adjacent to each other for the outer peripheral area A1a of the substrate W supported by the stage 30 ) And the thermoplastic resin B1 in a softened state is supplied so that the plural ring-shaped thermoplastic resin B1 supplied to the outer peripheral area A1a will be at each ring at the starting point B1a of the thermoplastic resin B1 in the outer peripheral area A1a The softened thermoplastic resin B1 is supplied by overlapping each other. By this, since the overlapping portion B1c is formed at the starting point B1a of each ring, it is possible to suppress the exposure of a part of the outer peripheral area A1a of the substrate W around the starting point B1a, It can avoid unnecessary etching. In addition, since the amount of the thermoplastic resin B1 in the overlapping portion B1c at each ring is suppressed, when the heating action of the heating portion 60 is softened again, it can be compared to the thermoplastic resin B1 The situation of expanding and entering into the etching target region R1 is suppressed, and it is possible to avoid unetched situations. Therefore, it is possible to suppress the deterioration of the quality of the substrate W caused by the aforementioned unnecessary etching or non-etching. In addition, the supply nozzle 52 is such that the overlap portion B1c of the annular thermoplastic resin (first thermoplastic resin) B1 supplied to the outer peripheral area A1a is adjacent to the annular thermoplastic resin B1 The overlapping portion B1c of the ring-shaped thermoplastic resin (second thermoplastic resin) B1 is offset in the circumferential direction of the substrate W, and the softened thermoplastic resin B1 is supplied. In detail, the supply nozzle 52 is to make the start point B1a and the end point B1b of each ring be at the adjacent ring instead of being adjacent, so that the start point B1a and the end point B1b of each ring are at the adjacent ring The position is offset in the circumferential direction (for example, the circumferential direction) of the substrate W, and the softened thermoplastic resin B1 is coated in a plurality of rings. By this, since the start point B1a and the end point B1b of each ring are located at the adjacent ring and are not adjacent respectively, therefore, the overlapping part B1c of each ring is also located at the adjacent ring and not adjacent . Therefore, compared to the case where the overlapping portion B1c of each ring is adjacent to the adjacent ring, when the heating operation of the heating portion 60 is softened again, the thermoplastic resin B1 can be directed toward Since the amount of flow in the etching target region R1 is reduced, it is possible to reliably suppress the thermoplastic resin B1 from expanding and entering the etching target region R1. <Other Embodiments> In the supply of the thermoplastic resin B1, the substrate W on the stage 30 and the supply nozzle 52 may be relatively moved. For example, the stage 30 may not be rotated. The supply nozzle 52 is moved relative to the outer peripheral end A1 of the substrate W on the stage 30 to supply the thermoplastic resin B1. As a mechanism for relatively moving the substrate W and the supply nozzle 52, in addition to the moving mechanism 40 that rotates the table 30, for example, the supply rotating mechanism 52 may be used along a ring or along a ring or a rectangular ring. A moving mechanism that moves in a straight line (for example, a guide member that supports the supply nozzle 52 and is capable of sliding in a curved or linear manner, a motor that is a driving source of the sliding movement, etc.). In addition to coating the thermoplastic resin B1 in a circular ring shape, it can also be coated in various shapes such as a rectangular ring shape. In addition, in FIG. 3, although an example in which the heating unit 60 is arranged at one place around the table 30 is shown, it is also possible to install a plurality of heating parts around the table 30. For example, with respect to the heating section 60 shown in FIG. 3, another heating section may be arranged on the opposite side so as to sandwich the rotation center of the table 30. In this case, for example, the adhesion starting point of the thermoplastic resin B1 is heated once at least during the half-round movement, so the degree of hardening is more suppressed, and adhesion can be expected Promote. In addition, the heating part 60 may be an annular heating part arranged so as to surround the periphery of the substrate W. In addition, in FIG. 11, the heating unit 60 provided directly above the stage 30 is configured to heat the substrate W before the application of the thermoplastic resin B1 (from before the application). However, as shown in FIG. 1, FIG. 9, and FIG. 10, the heating unit 60 may be arranged around the stage 30 or below the substrate W. In addition, although it is configured to make a loop around the attachment start point of the thermoplastic resin B1 at the substrate W, the discharge of the thermoplastic resin B1 from the supply nozzle 52 is stopped, but it can also be configured In order to discharge the thermoplastic resin B1 from the supply nozzle 52, the adhesion start point is moved two or more times before stopping. In particular, when coating is performed at the outer peripheral area A1a of the substrate W which is orthogonal to the direction of gravity, as shown in FIG. 5 or FIG. 7, it is ideal to cover more than 2 turns. . This is because, compared with the case of coating in one turn, in order to obtain the same coating width and the same film thickness of the thermoplastic resin B1, the discharge amount per unit time from the supply nozzle 52 can be achieved cut back. Therefore, the width and thickness of the thermoplastic resin B1 applied to the substrate W can be easily controlled. Furthermore, in this case, it may be configured such that the supply nozzle 52 is shifted in the radial direction of the substrate every time it turns. Furthermore, in the second embodiment, the heating of the substrate W by the heating unit 60 is configured to continue before, during, or after the application of the thermoplastic resin B1 by the supply nozzle 52. However, the system may be configured to operate the heating unit 60 only in the pre-treatment stage of applying the thermoplastic resin B1. That is, it may be configured such that only the substrate W is preheated by the heating unit 60, and for the substrate W in the preheated state, the thermoplastic resin B1 is discharged from the supply nozzle 52. Furthermore, it is also possible to perform trial discharge before the discharge operation at the supply position so that the thermoplastic resin B1 is appropriately discharged from the supply nozzle 52. For example, when the supply nozzle 52 is positioned at the supply position, the thermoplastic resin B1 is discharged from the supply nozzle 52 at the standby position in advance (discharge in advance). The thermoplastic resin B1 ejected from the supply nozzle 52 may be configured to be received by a retainer provided below the supply nozzle 52. In addition, the application of the thermoplastic resin B1 by the supply nozzle 52 may be performed while the supply nozzle 52 is moved, for example, in the direction of the rotation radius of the table 30. In addition, as the stage 30, in addition to sucking and holding the substrate W as a stage, it may also be configured to use a plurality of (for example, three) holding members, and the substrate W may be held by the holding members. Clamp it in and keep it in a horizontal state." Moreover, in addition to performing the etching process in addition to the substrate processing apparatus 10, it may also be configured that a supply nozzle for supplying an etching liquid (an example of the processing liquid) is provided in the processing chamber 20 and executed in the substrate processing apparatus 10 Etching treatment. In addition, in the third embodiment, when the softened thermoplastic resin B1 is applied in a plurality of loops extending along the outer periphery of the substrate W at the outer periphery area A1a of the substrate W, it is for The case where the coating is sequentially applied from the inside of the outer peripheral area A1a of the substrate W toward the outside is illustrated, but the system is not limited to this, and it may be configured to start from the outside of the outer peripheral area A1a of the substrate W toward the inside. Coating is performed sequentially, and when there are three or more plural ring systems, the system may be configured to be applied randomly instead of sequentially. In addition, in the third embodiment, when the softened thermoplastic resin B1 is applied in a plurality of loops extending along the outer periphery of the substrate W at the outer periphery area A1a of the substrate W, it is for The starting point B1a and the end point B1b of each ring are offset in the circumferential direction of the substrate W at the adjacent ring, and the overlapping part B1c of each ring is at the adjacent ring without being adjacent The situation is exemplified, but the system is not limited to this. The starting point B1a and the end point B1b of each ring may not be offset in the circumferential direction of the substrate W, that is, they are positioned on the same radius respectively, and the overlapping part B1c of each ring is formed in the adjacent ring Everywhere and adjacent. However, in order to more reliably suppress that the thermoplastic resin B1 expands and enters the etching target region R1, it is preferable to configure the overlapping portion B1c of each ring to be at the adjacent ring without interfering with each other. adjacent. In addition, in the third embodiment, when the softened thermoplastic resin B1 is applied to the outer peripheral area A1a of the substrate W, the application width is the same at each ring. However, the system is not limited to this, and the coating width system may be different for each ring. For example, it may be configured to gradually increase or decrease the width of the coating from the inside of the outer peripheral area A1a of the substrate W toward the outside. In addition, when there are three or more ring systems, it may be The composition is random and the coating width is changed. In addition, the thermoplastic resin B1 has a lower degree of adhesion to the substrate W than materials such as thermosetting resins. Therefore, it can adhere to the substrate W without damaging the substrate W. The thermoplastic resin B1 hardened above W is mechanically peeled off. Therefore, it can also be comprised so that the peeling part which peels the thermoplastic resin B1 in a hardened state from the board|substrate W after an etching process may be provided. For example, a part of the thermoplastic resin B1 in the hardened state can be grasped by peeling off the hand (pliers or tweezers, heating element such as nickel-chromium wire, or suction part), and the hardened state A part of the thermoplastic resin B1 is moved by a peeling hand that is gripping, and the hardened thermoplastic resin B1 is peeled from the substrate W. In addition, if it is intended to mechanically peel off the thermosetting resin that has been hardened and adhered to the substrate W, the substrate W will be damaged. If the thermosetting resin is cured once, it cannot be softened by heat. In order to remove the thermosetting resin in the hardened state without damaging the substrate W, it is necessary to use a chemical solution or the like. Dissolve the thermosetting resin. Therefore, compared to the case where the cured thermoplastic resin B1 is dissolved and removed from the substrate W using a chemical solution, by peeling the cured thermoplastic resin B1 from the substrate W, it can be removed in a short time. The thermoplastic resin B1 in the hardened state is removed from the substrate W, and there is no need to use the chemical liquid, so the burden on the environment caused by the disposal of the chemical liquid can be suppressed. In addition, since the thermoplastic resin B1 has a lower degree of adhesion to the substrate W than the thermosetting resin, the use of the thermoplastic resin B1 instead of the thermosetting resin makes it easier to The thermoplastic resin B1 in the hardened state on the substrate W is peeled from the substrate W, and the thermoplastic resin B1 in the hardened state can be removed from the substrate W without causing damage to the substrate W. When a thermosetting resin is used, in order to remove the thermosetting resin in the hardened state from the substrate W without causing damage to the substrate W, it is necessary to install a device for removal by a chemical solution or the like. And it leads to the complexity of the device and the increase in cost. In addition, the system may also be configured to recover the peeled thermoplastic resin B1 by the recovery part, and further, the system may also be configured to reuse the recovered thermoplastic resin B1. For example, as a recovery means, the aforementioned peeling hand can be placed directly above the recovery part to peel off the cured thermoplastic resin B1, and the recovery part receives and accommodates the dropped thermoplastic resin B1 in the cured state. In addition, as a means of recycling, it may be configured such that a recovery part equipped with a heater is provided in the processing chamber 20, and the recovery part is connected to the tank 51a of the storage unit 51 by piping, so that the recovery is performed. The thermoplastic resin B1 in the hardened state is heated and softened by a heater, and then the thermoplastic resin B1 in the softened state is returned to the groove 51a through a pipe. In this case, since the thermoplastic resin B1 can be reused, the cost can be suppressed, and the burden on the environment caused by the discarding of the thermoplastic resin B1 can be reduced. inhibition. In addition, it may be configured to position the supply nozzle 52 above the recovery part and discharge in advance. In addition, in the configuration for reusing the thermoplastic resin B1, the supply nozzle 52 may be positioned above the recovery part during standby, and the thermoplastic resin B1 may be continuously discharged continuously. Although several embodiments of the present invention have been described above, these embodiments are merely presented as examples and are not intended to limit the scope of the invention. These novel embodiments can be implemented in various other forms, and various omissions, substitutions, and changes can be made without departing from the gist of the invention. These embodiments or their modifications are also included in the scope or gist of the invention, and are also included in the invention described in the patent application and its equivalent scope.

10:基板處理裝置 30:台 52:供給噴嘴 60:加熱部 A1:基板之外周端部 A1a:基板之上面之外周區域 A1b:基板之外周面 B1:熱可塑性樹脂 B1a:起點(附著開始點) B1b:終點(附著結束點) B1c:重疊部(重疊部分) C1:未接著部 W:基板10: Substrate processing equipment 30: Taiwan 52: Supply nozzle 60: Heating part A1: The outer peripheral edge of the substrate A1a: The outer peripheral area of the substrate A1b: The outer peripheral surface of the substrate B1: Thermoplastic resin B1a: Starting point (attachment starting point) B1b: End point (attach end point) B1c: Overlapping part (overlapping part) C1: Not connected W: substrate

[圖1]係為對於第1實施形態的基板處理裝置之概略構成作展示之圖。 [圖2]係為用以對於第1實施形態之樹脂塗布的第1例作說明之圖。 [圖3]係為對於藉由第1實施形態之樹脂塗布的第1例而被塗布有樹脂的基板作展示之平面圖。 [圖4]係為對於第1實施形態的基板處理工程之流程作展示之流程圖。 [圖5]係為用以對於第1實施形態之樹脂塗布的第2例作說明之圖。 [圖6]係為對於藉由第1實施形態之樹脂塗布的第2例而被塗布有樹脂的基板作展示之平面圖。 [圖7]係為用以對於第1實施形態之樹脂塗布的第3例作說明之圖。 [圖8]係為對於在前述之第3例中之樹脂塗布的起點以及終點附近作展示之圖。 [圖9]係為用以對於第1實施形態之加熱部配置的第2例作說明之圖。 [圖10]係為用以對於第1實施形態之加熱部配置的第3例作說明之圖。 [圖11]係為對於第2實施形態的基板處理裝置之概略構成作展示之圖。 [圖12]係為對於第2實施形態的基板處理工程之流程作展示之流程圖。 [圖13]係為對於藉由第3實施形態之樹脂塗布的其中一例而被塗布有樹脂的基板作展示之平面圖。 [圖14]係為對於藉由第3實施形態之樹脂塗布的其中一例而被塗布有樹脂並被作了加熱的基板作展示之平面圖。[Fig. 1] is a diagram showing the schematic configuration of the substrate processing apparatus of the first embodiment. [Fig. 2] is a diagram for explaining the first example of resin coating of the first embodiment. Fig. 3 is a plan view showing a substrate coated with resin by the first example of resin coating of the first embodiment. [Figure 4] is a flowchart showing the flow of the substrate processing process of the first embodiment. Fig. 5 is a diagram for explaining a second example of resin coating in the first embodiment. Fig. 6 is a plan view showing a substrate coated with resin by the second example of resin coating of the first embodiment. Fig. 7 is a diagram for explaining a third example of resin coating in the first embodiment. [Fig. 8] is a diagram showing the vicinity of the starting point and the end point of the resin coating in the aforementioned third example. Fig. 9 is a diagram for explaining a second example of the arrangement of the heating part of the first embodiment. Fig. 10 is a diagram for explaining a third example of the arrangement of the heating part of the first embodiment. Fig. 11 is a diagram showing the schematic configuration of the substrate processing apparatus of the second embodiment. [Fig. 12] is a flowchart showing the flow of the substrate processing process of the second embodiment. [Fig. 13] is a plan view showing a substrate coated with resin by one example of resin coating of the third embodiment. Fig. 14 is a plan view showing a substrate coated with resin and heated by one example of resin coating of the third embodiment.

10:基板處理裝置 10: Substrate processing equipment

20:處理室 20: Processing room

21:清淨單元 21: Cleaning unit

30:台 30: Taiwan

40:旋轉機構 40: Rotating mechanism

50:樹脂供給部 50: Resin Supply Department

51:儲存單元 51: storage unit

51a:槽 51a: Slot

51a1:加熱器 51a1: heater

51a2:供給管 51a2: supply pipe

51b:開閉閥 51b: On-off valve

51c:幫浦 51c: pump

52:供給噴嘴 52: Supply nozzle

52a:加熱器 52a: heater

53:噴嘴移動機構 53: Nozzle moving mechanism

53a:可動臂 53a: movable arm

53b:臂移動機構 53b: Arm moving mechanism

60:加熱部 60: Heating part

70:控制部 70: Control Department

A1:基板之外周端部 A1: The outer peripheral edge of the substrate

W:基板 W: substrate

Wa:被處理面 Wa: processed surface

Claims (12)

一種基板處理裝置，係具備有： 台，係支持成為蝕刻對象之基板；和 供給噴嘴，係相對於藉由前述台而被作支持的前述基板，而進行相對移動，並將軟化了的熱可塑性樹脂，供給至藉由前述台而被作支持的前述基板之外周端部處；和 加熱部，係對於藉由前述供給噴嘴而被供給至了前述基板之外周端部處的熱可塑性樹脂進行加熱。A substrate processing device is provided with: The stage is to support the substrate that becomes the etching target; and The supply nozzle moves relative to the substrate supported by the stage, and supplies the softened thermoplastic resin to the outer peripheral end of the substrate supported by the stage ;with The heating unit heats the thermoplastic resin supplied to the outer peripheral end of the substrate through the supply nozzle. 如請求項1所記載之基板處理裝置，其中， 前述加熱部，係將被供給至前述基板之外周端部處的前述熱可塑性樹脂，從前述熱可塑性樹脂並未與前述基板作接觸之面側來進行加熱。The substrate processing apparatus described in claim 1, wherein: The heating unit heats the thermoplastic resin supplied to the outer peripheral end of the substrate from the side of the surface where the thermoplastic resin is not in contact with the substrate. 如請求項1所記載之基板處理裝置，其中， 前述加熱部，係對前述基板進行加熱，而將藉由前述供給噴嘴所被供給至前述基板之外周端部處的前述熱可塑性樹脂作加熱。The substrate processing apparatus described in claim 1, wherein: The heating part heats the substrate and heats the thermoplastic resin supplied to the outer peripheral end of the substrate by the supply nozzle. 如請求項1~3中之任一項所記載之基板處理裝置，其中， 前述供給噴嘴，係對於藉由前述台而被作支持的前述基板之外周面、以及藉由前述台而被作支持的前述基板之上面的外周區域，此些之其中一方或者是雙方，而供給前述熱可塑性樹脂。The substrate processing apparatus described in any one of claims 1 to 3, wherein: The supply nozzle is for supplying to the outer peripheral surface of the substrate supported by the stage and the outer peripheral area on the upper surface of the substrate supported by the stage, either or both of them. The aforementioned thermoplastic resin. 如請求項1~3中之任一項所記載之基板處理裝置，其中， 前述供給噴嘴，係對於藉由前述台而被作支持的前述基板之上面的外周區域，來以沿著前述基板之外周而延伸並且相互鄰接的複數之環狀而供給前述熱可塑性樹脂，並且以使被供給至前述外周區域處的複數之環狀之前述熱可塑性樹脂會在各環處而於對於前述外周區域之前述熱可塑性樹脂之附著開始點處相互重疊的方式，來供給前述熱可塑性樹脂。The substrate processing apparatus described in any one of claims 1 to 3, wherein: The supply nozzle supplies the thermoplastic resin in a plurality of rings extending along the outer periphery of the substrate and adjacent to each other to the outer peripheral area on the upper surface of the substrate supported by the stage, and The thermoplastic resin is supplied in such a manner that the plural ring-shaped thermoplastic resins supplied to the outer peripheral area overlap each other at the attachment start point of the thermoplastic resin to the outer peripheral area at each ring . 如請求項5所記載之基板處理裝置，其中， 前述供給噴嘴，係使被供給至前述外周區域處的環狀之前述熱可塑性樹脂之重疊部分，相對於與該環狀之前述熱可塑性樹脂相鄰接之環狀之前述熱可塑性樹脂的重疊部分而在前述基板之周方向上而作偏移，並供給前述熱可塑性樹脂。The substrate processing apparatus described in claim 5, wherein: The supply nozzle is such that the overlapping portion of the ring-shaped thermoplastic resin supplied to the outer peripheral region is relative to the overlapping portion of the ring-shaped thermoplastic resin adjacent to the ring-shaped thermoplastic resin It is offset in the circumferential direction of the substrate, and the thermoplastic resin is supplied. 一種基板處理方法，係具備有： 藉由台而支持成為蝕刻對象之基板之工程；和 相對於藉由前述台而被作支持的前述基板而使供給噴嘴進行相對移動，並藉由前述供給噴嘴來將軟化了的前述熱可塑性樹脂供給至藉由前述台而被作支持的前述基板之外周端部處之工程；和 將藉由前述供給噴嘴而被供給至了前述基板之外周端部處之前述熱可塑性樹脂，藉由加熱部來進行加熱之工程。A substrate processing method, which has: Support the process of the substrate that becomes the etching target by the stage; and The supply nozzle is relatively moved with respect to the substrate supported by the stage, and the softened thermoplastic resin is supplied by the supply nozzle to one of the substrates supported by the stage Works at the outer periphery; and The thermoplastic resin supplied to the outer peripheral end of the substrate by the supply nozzle is heated by a heating section. 如請求項7所記載之基板處理方法，其中， 前述加熱部，係將被供給至前述基板之外周端部處的前述熱可塑性樹脂，從前述熱可塑性樹脂並未與前述基板作接觸之面側來進行加熱。The substrate processing method described in claim 7, wherein: The heating unit heats the thermoplastic resin supplied to the outer peripheral end of the substrate from the side of the surface where the thermoplastic resin is not in contact with the substrate. 如請求項7所記載之基板處理方法，其中， 前述加熱部，係對前述基板進行加熱，而將藉由前述供給噴嘴所被供給至前述基板之外周端部處的前述熱可塑性樹脂作加熱。The substrate processing method described in claim 7, wherein: The heating part heats the substrate and heats the thermoplastic resin supplied to the outer peripheral end of the substrate by the supply nozzle. 如請求項7~9中之任一項所記載之基板處理方法，其中， 前述供給噴嘴，係對於藉由前述台而被作支持的前述基板之外周面、以及藉由前述台而被作支持的前述基板之上面的外周區域，此些之其中一方或者是雙方，而供給前述熱可塑性樹脂。The substrate processing method described in any one of claims 7 to 9, wherein: The supply nozzle is for supplying to the outer peripheral surface of the substrate supported by the stage and the outer peripheral area on the upper surface of the substrate supported by the stage, either or both of them. The aforementioned thermoplastic resin. 如請求項7~9中之任一項所記載之基板處理方法，其中， 前述供給噴嘴，係對於藉由前述台而被作支持的前述基板之上面的外周區域，來以沿著前述基板之外周而延伸並且相互鄰接的複數之環狀而供給前述熱可塑性樹脂，並且以使被供給至前述外周區域處的複數之環狀之前述熱可塑性樹脂會在各環處而於對於前述外周區域之前述熱可塑性樹脂之附著開始點處相互重疊的方式，來供給前述熱可塑性樹脂。The substrate processing method described in any one of claims 7 to 9, wherein: The supply nozzle supplies the thermoplastic resin in a plurality of rings extending along the outer periphery of the substrate and adjacent to each other to the outer peripheral area on the upper surface of the substrate supported by the stage, and The thermoplastic resin is supplied in such a manner that the plural ring-shaped thermoplastic resins supplied to the outer peripheral area overlap each other at the attachment start point of the thermoplastic resin to the outer peripheral area at each ring . 如請求項11所記載之基板處理方法，其中， 前述供給噴嘴，係使被供給至前述外周區域處的環狀之前述熱可塑性樹脂之重疊部分，相對於與該環狀之前述熱可塑性樹脂相鄰接之環狀之前述熱可塑性樹脂的重疊部分而在前述基板之周方向上而作偏移，並供給前述熱可塑性樹脂。The substrate processing method described in claim 11, wherein: The supply nozzle is such that the overlapping portion of the ring-shaped thermoplastic resin supplied to the outer peripheral region is relative to the overlapping portion of the ring-shaped thermoplastic resin adjacent to the ring-shaped thermoplastic resin It is offset in the circumferential direction of the substrate, and the thermoplastic resin is supplied.
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