TW202037775A - Manufacturing method of wafer, quality evaluation method of reuse slurry for wire saw, and quality evaluation method of used slurry for wire saw - Google Patents
Manufacturing method of wafer, quality evaluation method of reuse slurry for wire saw, and quality evaluation method of used slurry for wire saw Download PDFInfo
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B28—WORKING CEMENT, CLAY, OR STONE
- B28D—WORKING STONE OR STONE-LIKE MATERIALS
- B28D5/00—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor
- B28D5/04—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor by tools other than rotary type, e.g. reciprocating tools
- B28D5/045—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor by tools other than rotary type, e.g. reciprocating tools by cutting with wires or closed-loop blades
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B27/00—Other grinding machines or devices
- B24B27/06—Grinders for cutting-off
- B24B27/0633—Grinders for cutting-off using a cutting wire
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B27/00—Other grinding machines or devices
- B24B27/06—Grinders for cutting-off
- B24B27/0683—Accessories therefor
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B28—WORKING CEMENT, CLAY, OR STONE
- B28D—WORKING STONE OR STONE-LIKE MATERIALS
- B28D5/00—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor
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Abstract
Description
本發明,係有關於重複進行利用供給包含研磨粒及冷卻劑的漿料之線鋸,切片加工鑄錠,得到複數枚晶圓的步驟之晶圓製造方法。又,本發明,係有關於線鋸用再利用漿料的品質評估方法以及線鋸用已使用之漿料的品質評估方法。The present invention relates to a wafer manufacturing method that repeats the steps of using a wire saw that supplies slurry containing abrasive grains and a coolant to slice and process an ingot to obtain a plurality of wafers. In addition, the present invention relates to a quality evaluation method of recycled slurry for wire saws and a quality evaluation method of used slurry for wire saws.
成為半導體裝置基板的晶圓,係切斷矽或化合物半導體等構成的鑄錠而製造的。近年來,作為鑄錠的切斷方法,利用供給包含研磨粒及冷卻劑的漿料之線鋸,切片加工鑄錠的同時得到複數枚晶圓之遊離研磨粒方式成為主流。Wafers used as substrates for semiconductor devices are manufactured by cutting ingots made of silicon or compound semiconductors. In recent years, as a cutting method of an ingot, a wire saw that supplies slurry containing abrasive grains and a coolant is used to slice and process the ingot while simultaneously obtaining free abrasive grains for multiple wafers.
在此,回收切片加工中使用的已使用之漿料,分離及除去小粒子後,添加新的研磨粒及冷卻劑,視為再利用漿料,在新鑄錠的切片加工之際進行提供此再利用漿料給線鋸。在此,小粒子,主要由隨著切片加工從鑄錠產生的矽屑構成,其它也包含由於削線產生的線屑、磨耗並小徑化的研磨粒。Here, the used slurry used in the slicing process is recovered, after separating and removing small particles, new abrasive grains and coolant are added, which is regarded as reused slurry, and this is provided during the slicing process of a new ingot Reuse the slurry to the wire saw. Here, the small particles are mainly composed of silicon chips generated from the ingot during the slicing process, and others also include wire chips generated by wire cutting, and abrasive particles that are worn and reduced in diameter.
例如,專利文獻1中記載,從已使用之漿料回收有效研磨粒,除去磨損的研磨粒的同時,透過添加相當於除去的研磨粒量的新研磨粒再造漿料的方法中,使新研磨粒的平均圓形度在0.855〜0.875的範圍內,使新研磨粒的重量比為大約20%,使再造漿料內包含的研磨粒的平均圓形度在0.870〜0.915的範圍內。For example, Patent Document 1 describes that the effective abrasive particles are recovered from the used slurry, the worn abrasive particles are removed, and the slurry is reconstituted by adding new abrasive particles equivalent to the amount of removed abrasive particles. The average circularity of the particles is in the range of 0.855 to 0.875, the weight ratio of the new abrasive particles is about 20%, and the average circularity of the abrasive particles contained in the reconstituted slurry is in the range of 0.870 to 0.915.
又,專利文獻2中記載,準備追加研磨粒群,切斷處理使用的研磨粒群內,既定量添加混合追加研磨粒群,關於混合的研磨粒群,進行分級處理,使研磨粒尺寸在第1研磨粒徑以上且第2研磨粒徑以下。根據此方法,可以降低廢棄的研磨粒量的同時,也可以施行與新研磨粒群同樣品質的研磨處理。
[先行技術文獻]
[專利文獻]In addition,
[專利文獻1]日本專利公開第2004-255534號公報 [專利文獻2]日本專利公開第2011-218516號公報[Patent Document 1] Japanese Patent Publication No. 2004-255534 [Patent Document 2] Japanese Patent Publication No. 2011-218516
[發明所欲解決的課題][The problem to be solved by the invention]
漿料中包含的小粒子,不只無助於鑄錠的切削,還阻礙有助於切削之主要利用中徑研磨粒的切削。因此,再利用漿料中的小粒子量多時,透過使用上述再利用漿料進行的切片加工製造的晶圓平坦度有惡化傾向。一直以來,已使用之漿料的再生處理中,利用離心分離方式的分級處理,從已使用之漿料分離及除去小粒子。但是,本發明者們理解,根據回收的已使用之漿料中的小粒子量等,有時不能充分除去小粒子,在那情況下,再利用漿料中的小粒子量也變多,結果,損傷切片加工品質(即晶圓的平坦度)。因此,本發明者們,達成理解有必要適當評估已使用之漿料、再利用漿料中的小粒子量並管理。The small particles contained in the slurry not only do not contribute to the cutting of the ingot, but also hinder the cutting of the medium-diameter abrasive particles, which is useful for cutting. Therefore, when the amount of small particles in the reused slurry is large, the flatness of the wafer manufactured by the slicing process using the above-mentioned reused slurry tends to deteriorate. Traditionally, in the regeneration process of used slurry, centrifugal separation method is used to separate and remove small particles from the used slurry. However, the inventors understand that depending on the amount of small particles in the recovered used slurry, etc., sometimes the small particles cannot be sufficiently removed. In that case, the amount of small particles in the reused slurry also increases. As a result, , Damage the quality of slicing (that is, the flatness of the wafer). Therefore, the inventors have reached an understanding that it is necessary to appropriately evaluate and manage the amount of small particles in the used slurry and reuse the slurry.
鑑於上述課題,本發明,目的在於透過抑制起因於對線鋸的切片加工提供的再利用漿料品質之加工品質惡化,提供可以穩定且提高晶圓平坦度的晶圓製造方法。又,本發明,目的在於提供可以適當評估已使用之漿料及再利用漿料的品質之品質評估方法。 [用以解決課題的手段]In view of the above-mentioned problems, the present invention aims to provide a wafer manufacturing method that can stabilize and improve wafer flatness by suppressing the deterioration of the processing quality caused by the quality of the reused slurry provided for the slicing process of the wire saw. Furthermore, the present invention aims to provide a quality evaluation method that can appropriately evaluate the quality of used slurry and reused slurry. [Means to solve the problem]
為了解決上述課題,本發明者專心進行研究,得到以下的見解。即,已使用之漿料及再利用漿料的品質,利用根據既定定義的所謂「小粒子體積率」的參數進行評估及管理是有效的。於是明白,透過使供給給線鋸的再利用漿料的小粒子體積率確實在5.0%以下,可以穩定且提高切片加工製造的晶圓平坦度。In order to solve the above-mentioned problems, the inventors of the present invention intensively studied and obtained the following findings. In other words, it is effective to evaluate and manage the quality of used slurry and reused slurry using a parameter called "small particle volume rate" according to the established definition. Therefore, it is understood that by ensuring that the volume ratio of small particles of the reused slurry supplied to the wire saw is below 5.0%, the flatness of the wafer produced by the slicing process can be stabilized and improved.
根據上述見解完成的本發明要旨構成如下。 (1) 晶圓的製造方法,重複進行利用供給包含研磨粒及冷卻劑的漿料的線鋸,切片加工鑄錠,得到複數枚晶圓的步驟,包括: 第1步驟,回收上述切片加工使用的已使用之漿料至第1槽; 第2步驟,從上述第1槽供給上述已使用之漿料給再造處理單元,上述再造處理單元從上述已使用之漿料分離及除去小粒子,得到再造漿料; 第3步驟,從上述再造處理單元供給上述再造漿料至第2槽,在上述第2槽內添加及混合研磨粒及冷卻劑至上述再造漿料,調製再利用漿料; 第4步驟,從上述第2槽供給上述再利用漿料至第3槽;以及 第5步驟,從上述第3槽供給上述再利用漿料至上述線鋸,進行新鑄錠的切片加工; 其特徵在於: 使供給給上述線鋸的上述再利用漿料中根據以下定義的小粒子體積率RA 在5.0%以下; 記 小粒子體積率RA :假設上述再利用漿料中粒子的體積粒度分布中的平均粒徑為RA1 ,定義具有RA1 /2的基準粒徑RA2 以下的粒徑之粒子為小粒子,上述再利用漿料中上述小粒子在粒子中占的體積比率。The gist of the present invention completed based on the above findings is constituted as follows. (1) The method of manufacturing wafers, repeating the steps of using a wire saw supplied with slurry containing abrasive grains and coolant to slice and process the ingot to obtain multiple wafers, including: The first step is to recover the above-mentioned slices for use The used slurry to the first tank; In the second step, the used slurry is supplied from the first tank to the reprocessing unit, and the reprocessing unit separates and removes small particles from the used slurry to obtain Reconstituted slurry; In the third step, supply the reconstituted slurry from the reconstituted processing unit to the second tank, add and mix abrasive grains and coolant to the reconstituted slurry in the second tank, and prepare the reconstituted slurry; 4 steps, supplying the reused slurry from the second tank to the third tank; and step 5, supplying the reused slurry from the third tank to the wire saw, to perform slicing processing of a new ingot; wherein: the wire saw supplied to the slurry recycling the small particle volume ratio R a defined below 5.0% or less; referred small particle volume fraction R a: Suppose the volume particle size in the re-distribution of the particles using a slurry The average particle diameter in R A1 is defined as small particles with a particle diameter of R A1 /2 or less than the reference particle diameter R A2 . The volume ratio of the small particles in the particles in the reuse slurry is defined.
(2)上述(1)中記載的晶圓的製造方法,其中,供給上述切片加工的已使用之漿料中根據以下定義的小粒子體積率RB 超過10.0%時,不回收上述已使用之漿料至上述第1槽,廢棄上述已使用之漿料; 記 小粒子體積率RB :假設上述已使用之漿料中粒子的體積粒度分布中的平均粒徑為RB1 ,定義具有RB1 /2的基準粒徑RB2 以下的粒徑之粒子為小粒子,上述已使用之漿料中上述小粒子在粒子中占的體積比率。(2) The method of manufacturing a wafer described in (1) above, wherein the used slurry supplied to the slicing process is not recovered when the small particle volume rate R B defined below exceeds 10.0% Go to the first tank and discard the used slurry; note the volume ratio of small particles R B : Assuming that the average particle size in the volume particle size distribution of the used slurry is R B1 , it is defined as R B1 Particles with a diameter below the reference particle size R B2 of /2 are small particles, and the volume ratio of the small particles to the particles in the used slurry.
(3) 上述(1)或(2)中記載的晶圓的製造方法,其中,在上述第3步驟中,為了使上述再利用漿料的比重成為既定的目標值,設定添加的研磨粒及冷卻劑的量。(3) The method for manufacturing a wafer described in (1) or (2), wherein, in the third step, in order to make the specific gravity of the reused slurry a predetermined target value, the added abrasive grains and The amount of coolant.
(4)上述(3)中記載的晶圓的製造方法,其中,測量從上述第3槽採集的上述再利用漿料的小粒子體積率RA ,測量的RA 在5.0%以下時,從上述第3槽原封不動供給上述再利用漿料給上述線鋸,進行新鑄錠的切片加工; 測量的RA 超過5.0%時,再次在上述第2槽中上述再造漿料內添加及混合研磨粒及冷卻劑,調製追加的再利用漿料, 供給上述追加的再利用漿料至第3槽,藉此使上述第3槽內的上述再利用漿料的小粒子體積率RA 在5.0%以下,之後,供給上述再利用漿料給上述線鋸,進行新鑄錠的切片加工。(4) A method for producing a wafer of (3) described above, wherein the measurement acquired from the groove of the third slurry is recycled small particle volume ratio R A, R A measurement of 5.0% or less, from said third trench intact supplying the slurry to said recycling wire saw, slicing processing of new ingot; R a when measured exceeds 5.0% added again in the second vessel and mixing the above-described grinding slurry recycling tablets and coolant to prepare additional recycling slurry supplied to the slurry recycling added to the third tank, whereby the above-described slurry recycling small particle volume fraction of the third tank R a 5.0% Next, after that, the above-mentioned reuse slurry is supplied to the above-mentioned wire saw to perform slicing processing of a new ingot.
(5) 上述(4)中記載的晶圓的製造方法,其中,在上述再次的調製中,為了使上述第2槽內上述追加的再利用漿料中添加研磨粒及添加冷卻劑的質量比率分別為35%以上55%以下,設定添加的研磨粒及冷卻劑的量。(5) The method for manufacturing a wafer described in (4) above, wherein, in the re-preparation, the mass ratio of abrasive grains and coolant is added to the additional reuse slurry in the second tank Each is 35% or more and 55% or less, and set the amount of abrasive grains and coolant to be added.
(6) 線鋸用再利用漿料的品質評估方法,係從線鋸的鑄錠切片加工中使用的包含研磨粒及冷卻劑的已使用之漿料分離及除去小粒子,之後添加及混合新的研磨粒及冷卻劑調製的再利用漿料的品質評估方法,其特徵在於: 根據依照以下定義的小粒子體積率RA ,評估上述再利用漿料的品質; 記 小粒子體積率RA :假設上述再利用漿料中粒子的體積粒度分布中的平均粒徑為RA1 ,定義具有RA1 /2的基準粒徑RA2 以下的粒徑之粒子為小粒子,上述再利用漿料中上述小粒子在粒子中占的體積比率。(6) The quality evaluation method of recycled slurry for wire saws is to separate and remove small particles from the used slurry containing abrasive grains and coolant used in the ingot slicing process of the wire saw, and then add and mix the new the abrasive grain quality estimation and reusing slurry coolant modulation, wherein: the R a, following the evaluation of small particle volume ratio defined below the quality of recycled slurry; note small particle volume ratio R a: Assuming that the average particle size in the volume particle size distribution of the particles in the reused slurry is R A1 , it is defined that particles with a particle size below the reference particle size R A2 of R A1 /2 are small particles. The volume ratio of small particles in particles.
(7)上述(6)中記載的線鋸用再利用漿料的品質評估方法,其中,上述小粒子體積率RA 在5.0%以下的話,評估在新鑄錠的切片加工中可以再利用上述再利用漿料,上述小粒子體積率RA 超過5.0%的話,評估在新鑄錠的切片加工中不能再利用上述再利用漿料。(7) The method for evaluating the quality of recycled slurry for wire saws described in (6) above, wherein if the small particle volume ratio R A is 5.0% or less, it is evaluated that the above-mentioned can be reused in the slicing process of a new ingot recycling the slurry the volume ratio R a small particles exceeds 5.0%, the evaluation can not be reused in the above-described slurry recycling of slicing the ingot in the new.
(8) 線鋸用已使用之漿料的品質評估方法,係線鋸的鑄錠切片加工中使用的包含研磨粒及冷卻劑的已使用之漿料的品質評估方法,其特微在於: 根據依照以下定義的小粒子體積率RB ,評估上述已使用之漿料的品質; 記 小粒子體積率RB :假設上述已使用之漿料中粒子的體積粒度分布中的平均粒徑為RB1 ,定義具有RB1 /2的基準粒徑RB2 以下的粒徑之粒子為小粒子,上述已使用之漿料中上述小粒子在粒子中占的體積比率。(8) The quality evaluation method of the used slurry for wire saws is the quality evaluation method of the used slurry containing abrasive grains and coolant used in the ingot slicing process of the wire saw. Its characteristics are: Evaluate the quality of the above-mentioned used slurry according to the volume ratio of small particles defined below R B ; Record the volume ratio of small particles R B : Assume that the average particle size in the volume particle size distribution of the particles in the used slurry is R B1 , Define particles with a particle size below the reference particle size R B2 of R B1 /2 as small particles, and the volume ratio of the above-mentioned small particles in the particles in the used slurry.
(9)上述(8)中記載的線鋸用已使用之漿料的品質評估方法,其中,上述小粒子體積率RB 在10.0%以下的話,評估可以供給再造處理上述已使用之漿料,上述小粒子體積率RB 超過10.0%的話,評估不能供給再造處理上述已使用之漿料。 [發明效果](9) The method for evaluating the quality of used slurry for wire saws described in (8) above, wherein if the volume ratio of small particles R B is 10.0% or less, it is evaluated that the used slurry can be supplied for reprocessing. If the above-mentioned small particle volume ratio R B exceeds 10.0%, it is estimated that the above-mentioned used slurry cannot be supplied for reprocessing. [Invention Effect]
根據本發明的晶圓的製造方法,透過抑制起因於對線鋸的切片加工提供的再利用漿料品質之加工品質惡化,可以穩定且提高晶圓平坦度。又,根據本明的線鋸用再利用漿料的品質評估方法以及線鋸用已使用之漿料的品質評估方法,可以適當評估已使用之漿料及再利用漿料的品質。According to the method of manufacturing a wafer of the present invention, by suppressing the deterioration of the processing quality caused by the quality of the reused slurry provided for the slicing process of the wire saw, the wafer flatness can be stabilized and improved. Moreover, according to the quality evaluation method of the reused slurry for wire saws and the quality evaluation method of the used slurry for wire saws of the present invention, the quality of the used slurry and the reused slurry can be appropriately evaluated.
(晶圓的製造方法) 以下,參照第1〜3圖的同時,說明本發明一實施形態的晶圓製造方法。本實施形態的晶圓製造方法,係關於遊離研磨粒方式,重複進行利用供給包含研磨粒及冷卻劑的漿料之線鋸,切線加工鑄錠,得到複數枚晶圓的步驟。作為鑄錠的素材,可以舉出矽單結晶。提供矽單結晶的鑄錠給上述切片步驟得到的矽晶圓,之後,依序經過研磨(lapping)、蝕刻、兩面研磨(粗研磨)、單面研磨(鏡面研磨)、洗淨等步驟,成為製品的矽晶圓。(Wafer manufacturing method) Hereinafter, while referring to FIGS. 1 to 3, a method of manufacturing a wafer according to an embodiment of the present invention will be described. The wafer manufacturing method of this embodiment is based on the free abrasive grain method, repeating the steps of using a wire saw supplied with a slurry containing abrasive grains and coolant to cut the ingot to obtain a plurality of wafers. As the material of the ingot, silicon single crystal can be cited. Provide a silicon single crystal ingot to the silicon wafer obtained in the above slicing step, and then go through the steps of lapping, etching, double-side polishing (rough polishing), single-side polishing (mirror polishing), and cleaning in order to become Products of silicon wafers.
首先,參照第1圖,說明關於本實施形態中也可以使用的一般線鋸60。線鋸60,具有在複數滾軸62A、62B、62C間並排且可以來回移動伸展越過的線群64、保持鑄錠W的鑄錠保持機構66、以及對線群64供給漿料的噴嘴68。遊離研磨粒方式的情況下,一邊從噴嘴6連續供給包含研磨粒及冷卻劑的漿料8至線群64,一邊使線群64沿著其延伸方向Z高速來回移動。與此同時,利用鑄錠保持機構66,對線群64往塞入鑄錠W的方向移動。根據此時的研磨粒的切削作用,可以同時切出鑄錠W成為多數枚晶圓。又,第2圖中描繪線群44在圖中從左到右移動的狀態。First, referring to Fig. 1, a
漿料分散研磨粒為水溶性或油性冷卻劑。研磨粒的材料,可以從碳化矽、氮化矽、氮化硼、碳化硼、氧化鋁及鑽石等選擇一種以上,理想是使用特別以碳化矽為主成分的遊離研磨粒。冷卻劑理想是使用丙二醇(propylene glycol)、二乙烯基乙二醇(diethylene glycol)等乙二醇(glycol)系有機溶媒為主成分。典型地,可以使用以丙二醇(propylene glycol)為主體的水溶性冷卻劑。又,冷卻劑內包含5%質量左右的水。The slurry dispersion abrasive grains are water-soluble or oily coolants. The material of the abrasive grains can be selected from one or more of silicon carbide, silicon nitride, boron nitride, boron carbide, aluminum oxide, diamond, etc., and it is desirable to use free abrasive grains particularly mainly composed of silicon carbide. As the coolant, it is desirable to use a glycol-based organic solvent such as propylene glycol and diethylene glycol as the main component. Typically, a water-soluble coolant mainly composed of propylene glycol can be used. In addition, the coolant contains about 5% by mass of water.
參照第2圖,說明關於本實施形態中使用的線鋸系統100的構成以及使用此的本實施形態的晶圓製造方法的各步驟。線鋸系統100,包含線鋸裝置10、作為第1槽的回收槽20、再造處理單元30、作為第2槽的調配槽40、新冷卻劑槽42、新研磨粒槽44以及作為第3槽的供給槽50。With reference to Fig. 2, the configuration of the
線鋸系統100,通常包含10〜20台左右的複數台線鋸裝置10。各個線鋸裝置10包括漿料槽12及加工室14。加工室14內,配置第1圖中說明的線鋸60。漿料槽12,收納漿料。漿料槽12與第1圖所示的噴嘴68之間有配管,漿料從漿料槽12通過上述配管供給至噴嘴68。切片加工使用的漿料,回收返回到漿料槽12。1條鑄錠的切片加工中,漿料在漿料槽12與加工室14之間循環,不是供給新漿料給線鋸裝置10的漿料槽12。The
[第1步驟]
各線鋸裝置10中,1條鑄錠的切片加工一結束,上述切片加工中使用的已使用之漿料,就經由連接各線鋸裝置10與回收槽20的配管,回收至回收槽20。回收槽20,一般可收納1000〜2000L(升)左右的漿料。[Step 1]
In each wire saw
[第2步驟]
回收槽20內回收的已使用之漿料,從回收槽20供給至再造處理單元30。再造處理單元30,從已使用之漿料分離及除去小粒子,得到再造漿料。[Step 2]
The used slurry recovered in the
再造處理單元30,至少包括一次分離傾析器32、分離槽34、二次分離傾析器36以及二次輕液槽38。首先,回收槽20內收納的已使用之漿料,經由連接回收槽20與一次分離傾析器32的配管,供給至一次分離傾析器32,提供給一次分離步驟。一次分離步驟,主要以回收可再利用研磨粒為目的。一次分離傾析器32,一般由傾析器型離心分離裝置構成,在此已使用之漿料,被授予既定的離心力,分離成一次重液與一次輕液。一次重液,主要包含可再利用的研磨粒(再造研磨粒),且包含微量的冷卻劑。一次輕液,主要包含不適於再利用的小粒子以及大部分的冷卻劑。即,一次分離步驟中,關於已使用之漿料中的粒子,小粒子分離至一次輕液側,除此以外的再造研磨粒分離至一次重液側,已使用之漿料中的冷卻劑,主要分離至一次輕液側。又,如既述,小粒子主要由伴隨切片加工從鑄錠產生的矽屑構成,其它,也包含由於削線產生的線屑、磨耗而小徑化的研磨粒。The
一次重液,經由連接一次分離傾析器32與分離槽34的配管,供給至分離槽34,分離槽34可收納500〜2000L左右的一次重液。The primary heavy liquid is supplied to the
一次輕液,經由連接一次分離傾析器32與二次分離傾析器36的配管,供給至二次分離傾析器36,提供給二次分離步驟。二次分離步驟,主要以回收可再利用的冷卻劑為目的。二次分離傾析器36,以一般的傾析器型離心分離裝置構成,在此一次輕液,被授予比一次分離步驟時更大的既定離心力,分離成二次重液與二次輕液。二次輕液,主要包含可再利用的冷卻劑(再造冷卻劑)。二次重液,主要包含不適於再利用的小粒子以及不適於再利用的冷卻劑。即,二次分離步驟中,關於一次輕液中的冷卻劑,包含小粒子等不純物,比重增加的冷卻劑成分分離至二次重液側,除此以外的再造冷卻劑分離至二次輕液側,一次輕液中的小粒子分離至二次重液側。The primary light liquid is supplied to the
二次輕液,經由連接二次分離傾析器36與二次輕液槽38的配管,供給至二次輕液槽38,之後,經由連接二次輕液槽38與分離槽34的配管,供給至分離槽34。二次輕液槽38,可收納200〜800L左右的二次輕液。但是,二次輕液不經由二次輕液槽38,直接供給至分離槽34也可以。The secondary light liquid is supplied to the secondary
二次重液,因為主要包含不適於再利用的小粒子與不適於再利用的冷卻劑,經由從二次分離傾析器36延伸的配管廢棄。這樣,分離槽34內,收納從已使用之漿料分離及除去小粒子得到的再造漿料。Since the secondary heavy liquid mainly contains small particles that are not suitable for reuse and a coolant that is not suitable for reuse, it is discarded through a pipe extending from the
[第3步驟]
之後,再造漿料從再造處理單元30供給至調配槽40。具體而言,再造漿料,經由連接分離槽34與調配槽40的配管,供給至調配槽40。調配槽40中,添加及混合新的研磨粒及冷卻劑至再造漿料內調製再利用漿料。新的冷卻劑,收納在新冷卻劑槽42內,經由連接新冷卻劑槽42與調配槽40的配管,供給至調配槽40。新的研磨粒,收納在新研磨粒槽44內,經由新研磨粒槽44與調配槽40的配管,供給至調配槽40。調配槽40,可收納1000〜2000L左右的再利用漿料。[Step 3]
After that, the reconstituted slurry is supplied from the reconstituted
此第3步驟中,為了使調製的再利用漿料比重成為既定的目標值,理想是設定添加的研磨粒及冷卻劑的量。具體而言,理想是目標值在與未使用漿料比重相同左右的1.500〜1.600的範圍內。In this third step, in order to make the specific gravity of the prepared recycled slurry a predetermined target value, it is desirable to set the amount of abrasive grains and coolant to be added. Specifically, it is desirable that the target value is within the range of 1.500 to 1.600 which is about the same as the specific gravity of the unused slurry.
在此情況下,調配槽40內的再利用漿料中新研磨粒及新冷卻劑的質量比率,也在20〜50%左右的範圍內變動。原因是已使用之漿料中可再造的研磨粒與冷卻劑的量不均。又,上述調配槽40內的新研磨粒及新冷卻劑的質量比率,定義如下:
新研磨粒的質量比率=新研磨粒的投入量/(新研磨的投入量+再造漿料中的研磨粒量)
新冷卻劑的投入比率=新冷卻劑的投入量/(新冷卻劑的投入量+再造漿料中的冷卻劑量)In this case, the mass ratio of the new abrasive grains and the new coolant in the reuse slurry in the
[第4步驟]
調配槽40中調製的再利用漿料,經由連接調配槽40與供給槽50的配管,供給至供給槽50。供給槽50,可收納2000〜8000L左右的再利用漿料。[Step 4]
The reuse slurry prepared in the
[第5步驟]
供給槽50內收納的再利用漿料,經由連接供給槽50與各線鋸裝置10的漿料槽12之配管,供給至各漿料槽12,之後供給給線鋸60,在新鑄錠的切片加工中使用。[Step 5]
The reused slurry contained in the
[再利用漿料的小粒子體積率] 本實施形態中,供給給線鋸的再利用漿料中根據以下定義的小粒子體積率RA 在5.0%以下是關鍵; 記 小粒子體積率RA :假設上述再利用漿料中粒子的體積粒度分布中的平均粒徑為RA1 ,定義具有RA1 /2的基準粒徑RA2 以下的粒徑之粒子為小粒子,上述再利用漿料中上述小粒子在粒子中占的體積比率。[Small particle volume rate of reused slurry] In this embodiment, the small particle volume rate R A defined below in the reused slurry supplied to the wire saw is key to 5.0% or less; denote the small particle volume rate R A : Assuming that the average particle size in the volume particle size distribution of the particles in the reused slurry is R A1 , define that the particles with a diameter below the reference particle size R A2 of R A1 /2 are small particles. The volume ratio of the above-mentioned small particles in the particles.
再利用漿料的「小粒子體積率RA 」,係指示再利用漿料中的研磨粒、矽屑及線屑等全粒子中小粒子所占比例的指標,到此為止不測量作為定量指標。本實施形態中,由於此小粒子體積率RA 為5.0%以下,可以抑制起因於再利用漿料品質的加工品質惡化,結果,可以穩定且提高晶圓平坦度。即,穩定且提高GBIR(總體背面理想範圍)、Warp(翹曲)、奈米形貌 (nanotopography)等平坦化指標。又,根據平坦度提高的觀點,再利用漿料的小粒子體積率RA 越小越理想,但根據抑制研磨粒、冷卻劑的使用量(即成本)的觀點,以3.0%以上為佳。The "small particle volume rate R A "of the reused slurry is an index indicating the proportion of small particles in the total particles such as abrasive grains, silicon chips, and lint in the reused slurry. So far, it has not been measured as a quantitative indicator. In this embodiment, due to this small particle volume ratio R A is 5.0% or less, can be suppressed due to the deterioration of pulp quality recycling processing quality, a result, the wafer can be stabilized and improved flatness. That is, it stabilizes and improves the flattening index such as GBIR (ideal range of the overall back surface), Warp (warpage), and nanotopography. Further, according to the viewpoint of improving the flatness, recycling the slurry volume fraction of small particles over the smaller the R A, but according to the suppression amount of abrasive grain, the coolant (i.e. costs) point of view, preferably at least 3.0%.
第3圖,係顯示用以說明小粒子體積率的算出方法之再利用漿料中粒子的粒度分布圖。首先,測量再利用漿料的樣品中各個粒子的粒徑(面積圓相當直徑)。求出利用如第3圖所示的再利用漿料中粒子的體積計算的粒度分布D。測量各個粒子的粒徑的方法不特別限制,例如再利用漿料一邊流入細小的玻璃單室間的流路,一邊以攝影機一粒一粒拍攝粒子,透過影像處理,可以側量一個一個粒子的粒徑。根據測量精度的觀點,提供此測量的再利用漿料量,以2mL(毫升)以上為佳。Figure 3 is a diagram showing the particle size distribution of the particles in the reused slurry used to explain the calculation method of the small particle volume ratio. First, the particle size (the area circle equivalent diameter) of each particle in the sample of the reused slurry is measured. The particle size distribution D calculated using the volume of particles in the reused slurry as shown in Fig. 3 is obtained. The method of measuring the particle size of each particle is not particularly limited. For example, while the slurry flows into the flow path between the small glass cells, the particles are photographed one by one with a camera. Through image processing, the particles can be measured one by one. Particle size. From the viewpoint of measurement accuracy, the amount of reused slurry provided for this measurement is preferably 2 mL (milliliter) or more.
其次,求出粒度分布D的平均粒徑RA1 ,設定RA1 /2為基準粒徑RA2 。小粒子,定義為具有此基準粒徑RA2 以下的粒徑的粒子。於是,根據粒度分布D,算出再利用漿料中小粒子在粒子中占的體積比率。又,「平均粒徑RA1 」,定義為粒度分布D位於累積50%的粒徑。Next, the average particle size R A1 of the particle size distribution D is obtained, and R A1 /2 is set as the reference particle size R A2 . Small particles are defined as particles having a particle size less than this reference particle size R A2 . Then, based on the particle size distribution D, the volume ratio of small particles in the particles in the reused slurry is calculated. In addition, the "average particle diameter R A1 "is defined as the particle diameter at which the particle size distribution D lies at 50% of the cumulative.
如既述,為了使第3步驟中調製的再利用漿料比重成為既定的目標值,即使設定添加的研磨粒及冷卻劑的量,也會有再利用漿料的小粒子體積率RA
變動,超過5.0%的情況。具體而言,已使用之漿料的再利用處理重複10次以上時,緊接切片加工之後回收的已使用用之漿料中,透過繼續積累小粒子,結果,再造處理後的再造漿料中小粒子也變多。在如此的情況下,再利用漿料的小粒子體積率RA
有可能超過5.0%。在如此的情況下,維持不變供給再利用漿料給線鋸裝置10時,會損傷切片加工品質(即,晶圓的平坦度)。於是,作為供給給線鋸的再利用漿料的小粒子體積率確實在5.0%以下的方法,以下可以舉出。As already mentioned, in order to make the third step of recycling the slurry prepared in specific gravity becomes a predetermined target value, the amount of abrasive grains and coolant even if the set is added, there will be a slurry of small particles reuse volume change rate R A , More than 5.0% of cases. Specifically, when the reuse process of the used slurry is repeated more than 10 times, the used slurry recovered immediately after the slicing process continues to accumulate small particles. As a result, the reused slurry after the reprocessing process is small and medium. There are also more particles. In such a case, reuse of the slurry of small particle volume ratio R A is likely to exceed 5.0%. In such a case, when the reused slurry is continuously supplied to the wire saw
首先,測量從供給槽50採集的再利用漿料的小粒子體積率RA
。在此,測量的RA
在5.0%以下時,從供給槽50維持不變供給再利用漿料給線鋸裝置10,進行新鑄錠的切片加工。First, small particles from R A measured volume of recycled
另一方面,測量的RA
超過5.0%時,再次在調配槽40中添加及混合新的研磨粒及冷卻劑至再造漿料內,調製追加的再利用漿料。由於供給此追加的再利用漿料至供給槽50,供給槽50內的再利用漿料的小粒子體積率RA
在5.0%以下,之後,供給再利用漿料至線鋸裝置10,進行新鑄錠的切片加工。又,供給追加的再利用漿料至供給槽50後,再次測量小粒子體積率RA
,確認在5.0%以下。根據此方法,供給給線鋸的再利用漿料的小粒子體積率可以確實在5.0%以下。On the other hand, when the measured R A than 5.0%, the
在此之際,再次調製中,為了使調配槽40內追加的再利用漿料中的新研磨粒及新冷卻劑的質量比率分別為35%以上55%以下,設定添加的研磨粒及冷卻劑的量為佳。藉此,研磨粒及冷卻劑的使用量不會過度,而且再利用漿料的小粒子體積率可以確實在5.0%以下。At this time, in the re-preparation, in order to make the mass ratio of the new abrasive grains and the new coolant in the reused slurry added in the
上述實施形態中舉例切片加工矽單晶鑄錠的情況,但本發明不限於此,可以以任意材質的鑄錠為加工對象。In the above embodiment, the case of slicing a silicon single crystal ingot is exemplified, but the present invention is not limited to this, and an ingot of any material may be used as a processing object.
[已使用之漿料的小粒子體積率]
參照第2圖,本實施形態中,關於提供給切片加工的已使用之漿料,以考慮小粒子體積率為佳。即,提供給切片加工的已使用之漿料中根據以下定義的小粒子體積率RB
超過10.0%時,以不回收已使用之漿料至回收槽20而廢棄為佳;
記
小粒子體積率RB
:假設上述已使用之漿料中粒子的體積粒度分布中的平均粒徑為RB1
,定義具有RB1
/2的基準粒徑RB2
以下的粒徑之粒子為小粒子,上述已使用之漿料中上述小粒子在粒子中占的體積比率。[Small particle volume rate of used slurry] Referring to Fig. 2, in this embodiment, regarding the used slurry provided for the slicing process, it is better to consider the small particle volume rate. That is, when the volume ratio of small particles R B defined below in the used slurry provided for the slicing process exceeds 10.0%, it is better to discard the used slurry without recycling the used slurry to the
已使用之漿料的「小粒子體積率RB
」,係指示已使用之漿料中的研磨粒、矽屑以及線屑等全粒子中小粒子所占比例的指標,這也不是測量作為定量指標。此小粒子體積率RB
超過10.0%時,之後進行再造處理之際,使再利用漿料的小粒子體積率RA
確實在5.0%以下變得困難或是研磨粒、冷卻劑使用量必須過度。於是,小粒子體積率RB
超過10.0%時,不是回收已使用之漿料至回收槽20而是廢棄。小粒子體積率RB
在10.0%以下時,回收至回收槽20。藉此,不使研磨粒、冷卻劑的使用量過度,且可以使再利用漿料的小粒子體積率確實在5.0%以下。又,「小粒子體積率RB
」的算出方法,與再利用漿料的小粒子體積率RA
相同。The "small particle volume rate R B "of the used slurry is an indicator that indicates the proportion of small particles in the used slurry, such as abrasive grains, silicon chips, and wire chips. This is not a measurement as a quantitative indicator. . When the volume ratio of small particles R B exceeds 10.0%, it is difficult to ensure that the volume ratio of small particles R A of the reused slurry is below 5.0% during the subsequent recycling process, or the amount of abrasive particles and coolant must be excessive . Therefore, when the small particle volume ratio R B exceeds 10.0%, the used slurry is not recovered to the
作為此方法的實施形態,以下舉出。第一,各線鋸裝置10中1條鑄錠的切片加工結束的話,測量從漿料槽12採集的已使用之漿料的小粒子體積率RB
,可以根據測量值判定廢棄或回收。As an embodiment of this method, it is mentioned below. First, when the slicing of one ingot in each wire saw
又,第二形態,不一定測量小粒子體積率。如同既述,1條鑄錠的切片加工中,漿料在漿料槽12及加工室14之間循環。因此,已使用之漿料的小粒子體積率,提供給切片加工的鑄錠尺寸(長度及徑)有大致的正相關。因此,使用小粒子體積率在5.0%以下的漿料進行切片加工之際預先取得鑄錠尺寸與已使用之漿料的小粒子體積率的相關的話,根據提供給切片加工的鑄錠尺寸,可以判定廢棄或回收。In addition, the second aspect does not necessarily measure the volume rate of small particles. As mentioned earlier, in the slicing process of one ingot, the slurry circulates between the slurry tank 12 and the
(線鋸用再利用漿料的品質評估方法) 說明本發明的一實施形態的線鋸用再利用漿料的品質評估方法。本實施形態,係從線鋸的鑄錠切片加工中使用的包含研磨粒及冷卻劑的已使用之漿料,分離及除去小粒子,之後添加及混合新的研磨粒及冷卻劑調製的再利用漿料之品質評估方法。(Method of evaluating the quality of recycled slurry for wire saws) The quality evaluation method of the reused slurry for wire saws of one embodiment of this invention is demonstrated. In this embodiment, the used slurry containing abrasive grains and coolant used in the ingot slicing process of the wire saw is separated and removed, and then new abrasive grains and coolant are added and mixed for reuse. The quality evaluation method of slurry.
於是,特徵在於根據依照既述定義的小粒子體積率RA ,評估再利用漿料的品質。藉此,可以適當評估再利用漿料的品質。Thus, the R wherein the volume ratio of small particles in accordance with both the above-defined A, the assessment of the quality of recycled slurry. Thereby, the quality of the reused slurry can be appropriately evaluated.
例如,小粒子體積率RA 在5.0%以下的話,評估可以再利用再利用漿料至新鑄錠的切片加工,小粒子體積率RA 超過5.0%的話,評估不能再利用再利用漿料至新鑄錠的切片加工。For example, if the small particle volume ratio R A is less than 5.0%, it is estimated that the reused slurry can be reused for the slicing process of a new ingot. If the small particle volume ratio R A exceeds 5.0%, it is estimated that the reused slurry cannot be reused. Slicing of new ingots.
(線鋸用已使用之漿料的品質評估方法) 說明本發明的一實施形態的線鋸用已使用之漿料的品質評估方法。本實施形態,係線鋸的鑄錠切片加工中使用的包含研磨粒及冷卻劑的已使用之漿料的品質評估方法。(Method for evaluating the quality of used slurry for wire saws) The quality evaluation method of the used slurry for wire saws in one embodiment of the present invention will be described. This embodiment is a quality evaluation method of used slurry containing abrasive grains and coolant used in the ingot slicing process of the wire saw.
於是,特徵在於根據依照既述定義的小粒子體積率RB ,評估已使用之漿料的品質。藉此,可以適當評估已使用之漿料的品質。Therefore, it is characterized by evaluating the quality of the used slurry based on the small particle volume ratio R B defined in accordance with the aforementioned definition. In this way, the quality of the used slurry can be properly evaluated.
例如,小粒子體積率RB 在10.0%以下的話,評估可以提供已使用之漿料給再造處理,小粒子體積率RB 超10.0%的話,評估不能提供已使用之漿料給再造處理。For example, small particle volume fraction of R B at 10.0% or less, evaluation may be provided to the slurry recycling process has been used, small particle volume ratio R B over 10.0%, it can not provide evaluation of the slurry used to process recycled.
使用包含第1圖所示的線鋸之第2圖所示的線鋸系統,重複進行切片加工矽鑄錠的步驟。作為研磨粒,使用以編號#2000之碳化矽為主成分的遊離研磨粒。作為冷卻劑,使用水溶性的乙二醇系冷卻劑。水溶性冷卻劑內添加上述研磨粒,製造比重1.570的漿料,將此作為未使用的漿料開始作業。切片加工中使用的已使用之漿料,以既述的方法施行回收、再造處理,作為再利用漿料在新鑄錠的切片加工中使用。為了使調製的再利用漿料比重為1.570,設定添加的研磨粒及冷卻劑的量。Using the wire saw system shown in Figure 2 including the wire saw shown in Figure 1, repeat the steps of slicing and processing the silicon ingot. As abrasive grains, free abrasive grains mainly composed of silicon carbide No. #2000 were used. As the coolant, a water-soluble glycol-based coolant is used. The above-mentioned abrasive grains were added to the water-soluble coolant to produce a slurry with a specific gravity of 1.570, and the operation was started as an unused slurry. The used slurry used in the slicing process is recovered and recycled in the same manner as described above, and is used as the reused slurry in the slicing process of the new ingot. In order to make the prepared recycled slurry specific gravity 1.570, the amount of abrasive grains and coolant added was set.
已使用之漿料的小粒子體積率RB 與再利用漿料的小粒子體積率RA ,根據既述的方法,利用Sysmex 公司製的粒子徑.形狀分析裝置FPIA-3000測量。The small particle volume rate R B of the used slurry and the small particle volume rate R A of the reused slurry are based on the method described above, using the particle size manufactured by Sysmex. Shape analysis device FPIA-3000 measurement.
(實施例1) 在切片加工使用的再利用漿料的小粒子體積率RA 是5.23%的情況下與3.73%的情況下,比較切片加工後的(As-sliced)晶圓平坦度。第4圖顯示,各水準中,根據電容法求出從鑄錠的中央部分切出的1枚晶圓厚度的結果。(Example 1) recycling the slurry volume fraction of small particles for use in slicing R A is 3.73% of the cases, after the slicing comparator (As-sliced) wafer flatness 5.23% of cases. Figure 4 shows the results of determining the thickness of one wafer cut from the central part of the ingot according to the capacitance method in each level.
根據第4圖明白,以小粒子體積率RA 5.23%的再利用漿料加工的晶圓厚度在中心部局部變動,平坦度惡化。相對於此,以小粒子體積率RA 5.23%的再利用漿料加工的晶圓厚度局部變動少,平坦部良好。It is clear from Figure 4 that the thickness of the wafer processed with the reused slurry with a small particle volume rate of 5.23% R A varies locally at the center, and the flatness deteriorates. In contrast, the thickness of the wafer processed with the reused slurry having a small particle volume ratio of R A of 5.23% has little local variation in thickness, and the flat portion is good.
(實施例2) 重複使用各種小粒子體積率RA 的再利用漿料,進行切片加工,測量得到的晶圓平坦度指標的GBIR。GBIR是背面基準的總體平坦度指標,定義對於以晶圓背面作為基準面時上述基準面之晶圓表面最大厚度與最小厚度的偏差。第5圖,顯示小粒子體積率RA 與晶圓的GBIR之間的關係。又,第5圖的各繪點顯示使用某RA 的再利用漿料進行之從1條鑄錠得到的全晶圓的GBIR平均值。(Example 2) was repeated using a variety of small particle volume ratio R A recycling slurry for slicing, wafer flatness index GBIR measured. GBIR is the overall flatness index of the backside reference, which defines the deviation between the maximum thickness and minimum thickness of the wafer surface on the reference surface when the backside of the wafer is used as the reference surface. FIG 5, shows the relationship between the volume fraction of small particles GBIR R A and the wafer. Further, each of the plotted points of FIG. 5 R A display using a recycling GBIR average slurry was full of wafers from an ingot obtained.
根據第5圖明白,透過使用小粒子體積率RA 在5.0%以下的再利用漿料,可以確實控制GBIR在10.0μm以下。According to FIG. 5 understand, through the use of small particle volume fraction R recycled slurry A 5.0% or less, can be reliably controlled in GBIR 10.0μm or less.
(實施例3) 切片加工後的已使用之漿料的小粒子體積率RB 是各種值時,測量調製的再利用漿料的小粒子體積率RA 。又,如同既述,調製再利用漿料之際,為了使再利用漿料的比重為1.570,設定添加的研磨粒及冷卻劑的量。第6圖中顯示結果。(Example 3) When the small particle volume rate R B of the used slurry after the slicing process has various values, the small particle volume rate R A of the prepared reused slurry is measured. In addition, as mentioned earlier, when preparing the reuse slurry, the amount of abrasive grains and coolant added is set in order to make the specific gravity of the reuse slurry 1.570. Figure 6 shows the results.
根據第6圖明白,已使用之漿料的小粒子體積率RB 在10.0%以下時,可以使再利用漿料的小粒子體積率確實在5.0%以下。 [產業上的利用可能性]It is clear from Figure 6 that when the volume ratio of small particles R B of the used slurry is below 10.0%, the volume ratio of small particles of the reused slurry can indeed be below 5.0%. [Industrial use possibility]
根據本發明的晶圓製造方法,透過抑制起因於對線鋸的切片加工提供的再利用漿料品質之加工品質惡化,可以穩定且提高晶圓平坦度。According to the wafer manufacturing method of the present invention, it is possible to stabilize and improve the flatness of the wafer by suppressing the deterioration of the processing quality caused by the quality of the reused slurry provided for the slicing process of the wire saw.
10:線鋸裝置 12:漿料槽 14:加工室 20:回收槽(第1槽) 30:再造處理單元 32:一次分離傾析器 34:分離槽 36:二次分離傾析器 38:二次輕液槽 40:調配槽 (第2槽) 42:新冷卻劑槽 44:新研磨粒槽 50:供給槽 (第3槽) 60:線鋸 62A、62B、62C:滾軸 64:線群 66:鑄錠保持機構 68:噴嘴 100:線鋸系統 W:鑄錠10: Wire saw device 12: Slurry tank 14: Processing room 20: Recovery tank (1st tank) 30: Reengineering the processing unit 32: Primary separation decanter 34: Separation tank 36: Secondary separation decanter 38: Secondary light liquid tank 40: Blending slot (Second slot) 42: new coolant tank 44: New abrasive grain tank 50: Supply tank (3rd tank) 60: Wire saw 62A, 62B, 62C: Roller 64: line group 66: Ingot holding mechanism 68: Nozzle 100: Wire saw system W: Ingot
[第1圖]係顯示一般的線鋸60的示意圖;
[第2圖]係顯示本發明的一實施形態中使用的線鋸系統100構成的示意圖;
[第3圖]係用以說明再利用漿料的小粒子體積率RA
的算出方法圖;
[第4圖]係顯示實施例1中,再利用漿料的小粒子體積率RA
對晶圓厚度分布的影響圖;
[第5圖] 係顯示實施例2中,再利用漿料的小粒子體積率RA
與晶圓的GBIR的關係圖;以及
[第6圖] 係顯示實施例3中,已使用之漿料的小粒子體積率RB
與再利用漿料的小粒子體積率RA的關係圖。[Figure 1] is a schematic diagram showing a general wire saw 60; [Figure 2] is a schematic diagram showing the structure of a
10:線鋸裝置 10: Wire saw device
12:漿料槽 12: Slurry tank
14:加工室 14: Processing room
20:回收槽(第1槽) 20: Recovery tank (1st tank)
30:再造處理單元 30: Reengineering the processing unit
32:一次分離傾析器 32: Primary separation decanter
34:分離槽 34: Separation tank
36:二次分離傾析器 36: Secondary separation decanter
38:二次輕液槽 38: Secondary light liquid tank
40:調配槽(第2槽) 40: Blending tank (2nd tank)
42:新冷卻劑槽 42: new coolant tank
44:新研磨粒槽 44: New abrasive grain tank
50:供給(循環)槽(第3槽) 50: Supply (circulation) tank (3rd tank)
60:線鋸 60: Wire saw
68:噴嘴 68: Nozzle
100:線鋸系統 100: Wire saw system
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