TW202034425A - Wafer processing device - Google Patents

Abstract

A wafer processing device includes a reaction chamber body, a wafer carrier platform and a shower plate. The reaction chamber body has a top portion and a bottom portion, and the reaction chamber body includes a ring-shaped inner wall and an outer wall. The top portion, the bottom portion, the ring-shaped inner wall and the outer wall define a reaction chamber. There is a ring-shaped pumping channel between the ring-shaped inner wall and the outer wall. The ring-shaped inner wall has a plurality of slits, each slit has a plurality of directional segments. The plurality of directional segments define an exhaust path, and the length of the exhaust path is larger than the thickness of the ring-shaped inner wall. The shower plate is opposite to the wafer carrier platform and they define a reaction area.

Description

Wafer processing device

The present invention relates to a wafer processing device related to semiconductor process equipment, and more particularly to a wafer processing device with a reaction chamber with a ring-shaped inner wall with a plurality of slits.

In semiconductor processing equipment, the wafer is transported into the reaction chamber by a robot arm for processing. The wafer processing needs to be performed under vacuum pressure, and the ring-shaped inner wall of the reaction chamber has holes to exhaust the reaction gas to the exhaust area so that the reaction chamber reaches a vacuum environment.

In order to discharge the reactive gas and shield the plasma leakage, the diameter of the pumping port between the plasma reaction area and the exhaust area is reduced, although the same flow section and plasma leakage can be masked , But it becomes easy to have by-products clogging in a large number of small holes.

In view of this, the present invention discloses an improved wafer processing device.

According to an embodiment disclosed in the present invention, a wafer processing apparatus includes a reaction chamber, a wafer carrier, and a shower plate, wherein the reaction chamber has a top and a bottom, and the reaction chamber includes a ring-shaped inner wall and an outer wall. , The bottom and the ring-shaped inner wall define a reaction chamber. There is a ring-shaped suction channel between the ring-shaped inner wall and the outer wall. The ring-shaped inner wall has a plurality of slits, and each slit has a plurality of direction segments, and a plurality of directions. The segment defines an exhaust path, the length of the exhaust path is greater than the thickness of the annular inner wall; the spray plate is opposite to the wafer carrier and defines a reaction area.

In one embodiment, the annular inner wall includes an upper element and a lower element, and the upper element and the lower element are coupled to each other.

In an embodiment, one of the upper element and the lower element has a plurality of joints to support the upper element and form a plurality of slits.

In an embodiment, each of the plurality of slits has a first direction segment, a second direction segment, and a third direction segment. The first direction segment and the second direction segment are connected to each other and are perpendicular to each other, and the second direction segment and The third direction segments are connected to each other and perpendicular to each other.

In an embodiment, each of the plurality of slits has a first direction segment, a second direction segment, and a third direction segment, and the first direction segment and the second direction segment are connected to each other and the gap between the two is less than 90 degrees. The included angle is that the second direction segment and the third direction segment are connected to each other and the included angle between the two is less than 90 degrees.

In one embodiment, the slit of the annular inner wall has an inner opening and an outer opening, and the height of the inner opening and the outer opening are both 0.5 mm to 2.0 mm.

According to another embodiment disclosed in the present invention, a wafer processing device includes a reaction chamber, a wafer carrier, and a shower plate, wherein the reaction chamber has a top and a bottom, and the reaction chamber includes a ring-shaped inner wall and an outer wall, The top, bottom and ring-shaped inner wall define a reaction chamber. There is a ring-shaped exhaust channel between the ring-shaped inner wall and the outer wall. The ring-shaped inner wall has a plurality of slits, and each slit has an interior close to the reaction chamber. The opening and the outer opening close to the ring-shaped air extraction channel, and the height of the inner opening is greater than the height of the outer opening, so that there is an exhaust path between the inner opening and the outer opening that is greater than the thickness of the ring-shaped inner wall; spray plate and wafer carrier Relative and define a reaction zone.

In another embodiment, the annular inner wall includes an upper element and a lower element, and the upper element and the lower element are coupled to each other.

In another embodiment, one of the upper element and the lower element has a plurality of joints to support the upper element and form a plurality of slits.

In another embodiment, the height of the inner opening is at least 0.5 mm, and the height of the outer opening is at most 2.0 mm.

In the above-mentioned embodiment of the present disclosure, the length of the exhaust path is greater than the thickness of the annular inner wall to prevent the plasma from leaking, and the gas in the reaction chamber can be pumped to the annular exhaust passage to better suppress The pumping speed of the reaction chamber and the pressure of the reaction chamber are controlled.

For those of ordinary skill in the relevant fields, these and other viewpoints and embodiments will become clear with reference to the subsequent detailed description and accompanying drawings.

The present invention provides a wafer processing device for wafer processing equipment. The reaction chamber in the wafer processing device is provided with a ring-shaped inner wall with a plurality of slits to prevent leakage of the plasma, and to better suppress the pumping speed of the reaction chamber and control the pressure of the reaction chamber.

The embodiments will now be described in detail with reference to accompanying drawings of the present invention. In the accompanying drawings, the same and/or corresponding elements are denoted by the same reference symbols.

Various embodiments will be disclosed here; however, it should be understood that the disclosed embodiments are only used as illustrations that can be embodied in various forms. In addition, each example given in connection with the various embodiments is intended as an illustration, not a limitation. Further, the drawing does not necessarily conform to the size ratio, and some features are enlarged to show the details of specific elements (and any size, material and similar details shown in the drawing are intended to be illustrative only and not limiting) . Therefore, the specific structure and function details disclosed herein are not to be construed as limitations, but are merely used to teach those skilled in the related art to implement the disclosed embodiments.

Please refer to the first and second figures, which show a side view of a wafer processing apparatus 100 of the present invention. The wafer processing apparatus 100 of the present invention includes a reaction chamber 10, a wafer carrier 20, and a spray plate 30. The reaction chamber 10 has a top 101 and a bottom 102, and the reaction chamber 10 includes a ring-shaped inner wall 103 and an outer wall 104. The top 101, the bottom 102 and the ring-shaped inner wall 103 define a reaction chamber. There is a ring-shaped exhaust channel 106 between the ring-shaped inner wall 103 and the outer wall 104. The ring-shaped inner wall 103 has a plurality of slits 107, each The slit 107 has a plurality of directional segments, and the plurality of directional segments define an exhaust path, and the length of the exhaust path is greater than the thickness T of the annular inner wall 103. The wafer carrier 20 is opposite to the shower plate 30 and defines a reaction area 105, and the upper surface of the wafer carrier 20 is parallel to the lower surface of the shower plate 30.

The second figure shows an enlarged cross-sectional view of part of the components of the reaction chamber 10 of the wafer processing apparatus 100 of the first figure. As shown in the second figure (a), the annular inner wall 103 of the reaction chamber 10 includes an upper component 103a and a lower component 103b, and the upper component 103a and the lower component 103b are coupled to each other. In an embodiment, the lower element 103b has a plurality of connecting portions 103c to support the upper component 103a, and a plurality of slits 107 are formed between the plurality of connecting portions 103c. In another embodiment, as shown in the second figure (b), the upper element 103a has a plurality of connecting portions 103c to support the upper component 103a, and a plurality of slits 107 are formed between the plurality of connecting portions 103c. The upper element 103a and the lower element 103b can be fixed or can move up and down. The upper element 103a and the lower element 103b can be moved up and down by air cylinders or motors, so that the position of the slit 107 relative to the wafer can be controlled, and the height of the slit 107 can be determined by modifying the size of the connecting portion 103c.

Please refer to the third figure, which shows a partial enlarged cross-sectional view of the annular inner wall 103 of an embodiment of the second figure. In this embodiment, each slit 107 has a first-direction segment D1, a second-direction segment D2, and a third-direction segment D3. The first-direction segment D1 and the second-direction segment D2 are connected to each other and perpendicular to each other (the included angle θ Is 90 degrees), the second direction segment D2 and the third direction segment D3 are connected to each other and perpendicular to each other (the included angle θ is 90 degrees). In this embodiment, the first direction segment D1 has a length d1, the second direction segment D2 has a length d2, and the third direction segment D3 has a length d3. The sum of the length d1, the length d2, and the length d3 is greater than that of the annular inner wall 103. Thickness T. In this embodiment, each slit 107 has an internal opening close to the reaction chamber and an external opening close to the annular suction channel 106, and the height h1 of the internal opening and the height h2 of the external opening are both 0.5 mm to 2.0 mm.

Please refer to the fourth figure, which shows a partial enlarged cross-sectional view of the annular inner wall 103 of another embodiment of the second figure. In another embodiment, each slit 107 has a first direction segment D4, a second direction segment D5, and a third direction segment D6. The first direction segment D4 and the second direction segment D5 are connected to each other and there is If the included angle ɸ is less than 90 degrees, the second direction segment D5 and the third direction segment D6 are connected to each other and the included angle ɸ between the two is less than 90 degrees. In another embodiment, the first direction segment D4 has a length d4, the second direction segment D5 has a length d5, and the third direction segment D6 has a length d6. The sum of the length d4, the length d5, and the length d6 is greater than the annular inner wall 103 The thickness T. In this embodiment, each slit 107 has an internal opening close to the reaction chamber and an external opening close to the annular suction channel 106, and the height h3 of the internal opening and the height h4 of the external opening are both 0.5 mm to 2.0 mm.

Please refer to the fifth figure, which shows a partial enlarged cross-sectional view of the annular inner wall 103 of another embodiment of the second figure. In yet another embodiment, each slit 107 has an internal opening close to the reaction chamber and an external opening close to the annular suction channel 106, and the height of the internal opening h5 is greater than the height of the external opening h6, and the height of the internal opening h5 is the smallest The height h6 of the outer opening is at most 2.0 mm, and there is an exhaust path between the inner opening and the outer opening. The length d7 of the exhaust path is greater than the thickness T of the annular inner wall 103.

The above-mentioned slits in various directions can be arranged and combined in different directions, numbers and angles. The length of the exhaust path is greater than the thickness of the annular inner wall to prevent the leakage of plasma, and the gas in the reaction chamber When pumping to the annular pumping channel, the pumping speed of the reaction chamber is better suppressed and the pressure of the reaction chamber is controlled. The foregoing multiple embodiments related to the slit are not intended to limit the disclosure. This disclosure is applicable to all thin film production equipment, such as chemical vapor deposition (CVD), remote plasma-enhanced CVD (PECVD), and atomic layer chemical vapor deposition (atomic layer deposition, ALD), physical vapor deposition (PVD) and etching.

Although the wafer processing apparatus of the present invention has been described in one or more embodiments, it should be understood that the disclosure of the present invention is not limited to the disclosed embodiments. The present invention covers various modifications and similar configurations included in the spirit and viewpoint of the scope of the patent application, and this viewpoint should be given the broadest interpretation to include all modifications and similar structures. The disclosure of the present invention also includes all embodiments in the scope of the following patent applications.

100: Wafer processing device 10: Reaction chamber 101: top 102: bottom 103: Ring-shaped inner wall 103a: Upper component 103b: Lower component 103c: Connection Department 104: Outer Wall 105: reaction area 106: Annular exhaust channel 20: Wafer carrier 30: spray board D1: direction D2: Direction D3: Direction D4: Direction D5: Direction D6: Direction D7: Direction d1: length d2: length d3: length d4: length d5: length d6: length d7: length h1: height h2: height h3: height h4: height h5: height h6: height T: thickness θ: included angle ɸ: included angle

The structure size ratio shown in the drawings does not limit the actual embodiment of the present invention. The first figure is a side view of a wafer processing apparatus according to an embodiment of the present disclosure; The second figure is an enlarged cross-sectional view of some components of the reaction chamber of the wafer processing apparatus of the first figure; The third figure is a partial enlarged cross-sectional view of the annular inner wall of an embodiment of the second figure; The fourth figure is a partial enlarged cross-sectional view of the ring-shaped inner wall of another embodiment of the second figure; The fifth figure is a partial enlarged cross-sectional view of the annular inner wall of another embodiment of the second figure.

100: Wafer processing device

10: Reaction chamber

101: top

102: bottom

103: Ring-shaped inner wall

104: Outer Wall

105: reaction area

106: Annular exhaust channel

20: Wafer carrier

30: spray board

Claims (10)

A wafer processing device includes: A reaction chamber has a top and a bottom. The reaction chamber includes a ring-shaped inner wall and an outer wall. The top, the bottom and the ring-shaped inner wall define a reaction chamber. The ring-shaped inner wall and the outer wall There is a ring-shaped exhaust passage between the ring-shaped inner wall and the ring-shaped inner wall has a plurality of slits, each slit has a plurality of directional segments, and the plural directional segments define an exhaust path, the length of the exhaust path is greater than the ring The thickness of the inner wall of the mould; A wafer carrier; and A shower plate is opposite to the wafer carrier and defines a reaction area. The wafer processing apparatus according to claim 1, wherein the annular inner wall includes an upper element and a lower element, and the upper element and the lower element are coupled to each other. According to the wafer processing apparatus described in claim 2, one of the upper element and the lower element has a plurality of connecting portions to support the upper element and form the plurality of slits. The wafer processing apparatus according to claim 1, wherein each of the plurality of slits has a first direction segment, a second direction segment, and a third direction segment, the first direction segment and the second direction segment The two-direction segments are connected to each other and perpendicular to each other, and the second-direction segment and the third-direction segment are connected to each other and perpendicular to each other. The wafer processing apparatus according to claim 1, wherein each of the plurality of slits has a first direction segment, a second direction segment, and a third direction segment, the first direction segment and the second direction segment The two-directional segments are connected to each other with an included angle less than 90 degrees between them, and the second-directional segment and the third-directional segment are connected to each other with an included angle less than 90 degrees between them. The wafer processing apparatus according to claim 1, wherein the slit of the annular inner wall has an inner opening and an outer opening, and the heights of the inner opening and the outer opening are both 0.5 mm to 2.0 mm. A wafer processing device includes: A reaction chamber has a top and a bottom. The reaction chamber includes a ring-shaped inner wall and an outer wall. The top, the bottom and the ring-shaped inner wall define a reaction chamber, the ring-shaped inner wall and the outer wall There is a ring-shaped pumping channel in between. The ring-shaped inner wall has a plurality of slits. Each slit has an inner opening close to the reaction chamber and an outer opening close to the ring-shaped pumping channel. The height of the opening is greater than the height of the outer opening, so that there is an exhaust path between the inner opening and the outer opening that is larger than the thickness of the annular inner wall; A wafer carrier; and A shower plate is opposite to the wafer carrier and defines a reaction area. The wafer processing apparatus according to claim 7, wherein the annular inner wall includes an upper element and a lower element, and the upper element and the lower element are coupled to each other. According to the wafer processing apparatus described in claim 8, one of the upper element and the lower element has a plurality of joints to support the upper element and form the plurality of slits. The wafer processing apparatus according to claim 7, wherein the height of the inner opening is at least 0.5 mm, and the height of the outer opening is at most 2.0 mm.

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