CN103031540B - Reaction chamber device and there is its substrate processing equipment - Google Patents
Reaction chamber device and there is its substrate processing equipment Download PDFInfo
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- CN103031540B CN103031540B CN201110303918.XA CN201110303918A CN103031540B CN 103031540 B CN103031540 B CN 103031540B CN 201110303918 A CN201110303918 A CN 201110303918A CN 103031540 B CN103031540 B CN 103031540B
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Abstract
The present invention proposes a kind of reaction chamber device, comprising: chamber body, is limited with reaction chamber in chamber body; Pallet, pallet to be arranged among reaction chamber and rotatable; And diffuser, diffuser is used among chamber body, form the first gas zones and the second gas zones that mutually replace, wherein, process gas is passed among the first gas zones, among the second gas zones, pass into separation gas, be positioned at the rotation of the substrate on described pallet with pallet alternately through described first gas zones and the second gas zones.The present invention also proposes a kind of substrate processing equipment.According to reaction chamber device of the present invention, can effectively prevent the reacted by product of reactant gases on the impact of substrate film forming.According to substrate processing equipment of the present invention, reduce the by product of reactant gases to the impact of substrate film forming, promote the technic index of substrate film forming, reactant gases utilization ratio can also be improved, improve the service efficiency of this substrate processing equipment.
Description
Technical field
The present invention relates to microelectronics technology, the special substrate processing equipment designing a kind of reaction chamber device and there is this reaction chamber device.
Background technology
Chemical vapor deposition (CVD) equipment is widely used in semi-conductor, LED, the industries such as liquid crystal.Utilize CVD equipment can prepare film on different types of substrate surface.In LED industry, general MOCVD device (one in CVD equipment) produces epitaxial wafer.Need by gas leading-in device process gas introducing technology chamber before utilizing CVD equipment production epitaxial wafer, and make it flow through substrate surface.Because substrate has been heated to the temperature needed for technique, can there is high-temperature chemical reaction when flowing through the surface of substrate in process gas, and the resultant of its reaction can be deposited on substrate surface and form film.Because the high-temperature chemical reaction between process gas is outside the component needed for generating, also can generate many byproducts of reaction affecting film quality simultaneously.Will seriously hinder expected chemical reaction more than the concentration that the by product of chemical reaction reaches certain, and affect the steepness of film interface.
Therefore, how fast the chemical reaction by product of discharging between process gas is the difficulty that current C VD equipment faces.And current MOCVD device is all the exhaust capacity (using large-scale dry pump) by increasing process cavity, discharge the chemical reaction by product between process gas fast.But, improve the waste that also result in a large amount of unreacted process gas while exhaust capacity discharges various by product fast.
Summary of the invention
The present invention is intended at least one of solve the problems of the technologies described above.
For this reason, one object of the present invention is to propose a kind of reaction chamber device, and this reaction chamber device can prevent the reacted by product of reactant gases on the impact of substrate film forming effectively.In addition, also there is the advantage of saving reactant gases.
Another object of the present invention is to propose a kind of substrate processing equipment, this substrate processing equipment reduces the by product of reactant gases to the impact of substrate film forming, promote the technic index of substrate film forming, reactant gases utilization ratio can also be improved, improve the service efficiency of this substrate processing equipment.
For achieving the above object, the reaction chamber device that first aspect present invention proposes, comprising: chamber body, is limited with reaction chamber in described chamber body; Pallet, described pallet to be arranged among described reaction chamber and rotatable; And diffuser, described diffuser is used among described chamber body, form the first gas zones and the second gas zones that mutually replace, wherein, process gas is passed among described first gas zones, separation gas is passed among described second gas zones, wherein, the rotation of the substrate on described pallet with pallet is positioned at alternately through described first gas zones and the second gas zones.
According to the reaction chamber device of the embodiment of the present invention, process gas and separation gas are passed in reaction chamber by the mode mutually replaced, particularly, process gas and separation gas can be passed into alternately along the perisporium of reaction chamber, two kinds of gases can form two regions (the second gas zones that the first gas zones formed as process gas and separation gas are formed) mutually replaced in reaction chamber thus, multiple first gas zones is kept apart by the second gas zones, can be understood as in reaction process, process gas in each first gas zones reacts separately, therefore the crossed contamination of chemical reaction by product can effectively be reduced, and flow through alternately in the process of substrate surface at process gas and separation gas, the film that separation gas can be formed in process gas substrate carries out transverse dispersion, avoid the longitudinal growth of substrate membrane, like this, be conducive to the planarization of film, and separation gas can also clean the process byproducts of substrate surface, and then ensure the quality of film.In addition, because separation gas is to the help of substrate film forming, the infringement of process gas by product to substrate film forming is reduced relatively, therefore, this reaction chamber device reduces to extraneous rate request gaseous emission, like this, the flow velocity of process gas effectively can be reduced, and then the utilization ratio of lifting process gas.
In addition, reaction chamber device according to the present invention can also have following additional technical characteristic:
In one embodiment of the invention, the area of described first gas zones is greater than the area of described second gas zones.
In one embodiment of the invention, described pallet is annular, and described pallet has centre hole.
In one embodiment of the invention, described diffuser comprises: the first air intake assembly, between the inwall that described first air intake assembly is arranged on described chamber body and outer wall, and described first air intake assembly comprises alternatively distributed first gas spout and the second gas spout, wherein, described first gas spout ejection process gas, described second gas spout ejection separation gas.
In one embodiment of the invention, described reaction chamber device also comprises: first row pneumatic module, and described first row pneumatic module is positioned within the centre hole of described pallet.
In one embodiment of the invention, described diffuser comprises: the second air intake assembly, described second air intake assembly is tubular, and within the centre hole being arranged on pallet, and described first air intake assembly comprises alternatively distributed 3rd gas spout and the 4th gas spout, wherein, described 3rd gas spout ejection process gas, described 4th gas spout ejection separation gas.
In one embodiment of the invention, described reaction chamber device also comprises: second row pneumatic module, and described second row pneumatic module is arranged between the inwall of described chamber body and outer wall to be in communication with the outside by described reaction chamber.
In one embodiment of the invention, the material of described pallet is graphite, and is coated with SiC plated film outside described pallet.
In one embodiment of the invention, the roof of described chamber body, diapire and perisporium are equipped with water cooling plant.
In one embodiment of the invention, described reaction chamber device also comprises: the well heater be positioned under each described pallet thinks that described pallet heats.
In one embodiment of the invention, described reaction chamber device also comprises: be positioned at the protective shield under described well heater.
In one embodiment of the invention, described reaction chamber device also comprises: one or more 5th gas spout, between the inwall that described one or more 5th gas spout is arranged on described chamber body and outer wall, and described one or more 5th gas spout is positioned under described well heater.
In one embodiment of the invention, described reaction chamber device also comprises: be positioned at the rectiblock on described and multiple pallet; And lifting motor, described lifting motor controls the vertically movement of described rectiblock.
In one embodiment of the invention, described reaction chamber device also comprises: device for sealing magnetic fluid, and described device for sealing magnetic fluid is connected with described pallet; And rotating machine, described rotating machine is connected with described device for sealing magnetic fluid by Timing Belt, and drives described device for sealing magnetic fluid to rotate.
The substrate processing equipment that the embodiment of second aspect present invention proposes comprises: reaction chamber device, and described reaction chamber device is the reaction chamber device that above-mentioned first aspect embodiment proposes; And controller, described controller controls the rotating speed of described pallet.
According to the substrate processing equipment of the embodiment of the present invention, not only effectively can reduce the crossed contamination of chemical reaction by product, and flow through alternately in the process of substrate surface at process gas and separation gas, the film that separation gas can be formed in process gas substrate carries out transverse dispersion, avoid the longitudinal growth of substrate membrane, like this, be conducive to the planarization of film, and separation gas can also clean the process byproducts of substrate surface, and then ensure the quality of film.In addition, this substrate processing equipment can reduce the flow velocity of process gas effectively, and then the utilization ratio of lifting process gas, correspondingly, also effectively can improve the rate of utilization of substrate processing equipment.
In addition, following additional technical characteristic can also be had according to substrate processing equipment of the present invention:
In one embodiment of the invention, described controller also controls the lifting motor of described reaction chamber device to control the distance between described rectiblock and described pallet.By regulating the distance between rectiblock and pallet, the disturbance of airflow field to pallet effectively can be adjusted, therefore, the effect temperature compensation that the high speed rotating that can strengthen pallet brings, and then the temperature homogeneity improving tray surface.
Additional aspect of the present invention and advantage will part provide in the following description, and part will become obvious from the following description, or be recognized by practice of the present invention.
Accompanying drawing explanation
Above-mentioned and/or additional aspect of the present invention and advantage will become obvious and easy understand from accompanying drawing below combining to the description of embodiment, wherein:
Fig. 1 is the structure iron of the reaction chamber device of the embodiment of the present invention;
Fig. 2 is the structure iron of the reaction chamber device of the present invention's specific embodiment;
Fig. 3 for the device of reaction chamber shown in Fig. 2 along the A shown in Fig. 2 to sectional view;
Fig. 4 is the sectional view of the reaction chamber device of another embodiment of the present invention; And
Fig. 5 is the structure iron of the device of reaction chamber shown in Fig. 4.
Embodiment
Be described below in detail embodiments of the invention, the example of described embodiment is shown in the drawings, and wherein same or similar label represents same or similar element or has element that is identical or similar functions from start to finish.Being exemplary below by the embodiment be described with reference to the drawings, only for explaining the present invention, and can not limitation of the present invention being interpreted as.
In describing the invention, it will be appreciated that, term " " center ", " longitudinal direction ", " transverse direction ", " on ", D score, " front ", " afterwards ", " left side ", " right side ", " vertically ", " level ", " top ", " end ", " interior ", orientation or the position relationship of the instruction such as " outward " are based on orientation shown in the drawings or position relationship, only the present invention for convenience of description and simplified characterization, instead of indicate or imply that the device of indication or element must have specific orientation, with specific azimuth configuration and operation, therefore limitation of the present invention can not be interpreted as.In addition, term " first ", " second " only for describing object, and can not be interpreted as instruction or hint relative importance.
In describing the invention, it should be noted that, unless otherwise clearly defined and limited, term " installation ", " being connected ", " connection " should be interpreted broadly, and such as, can be fixedly connected with, also can be removably connect, or connect integratedly; Can be mechanical connection, also can be electrical connection; Can be directly be connected, also indirectly can be connected by intermediary, can be the connection of two element internals.For the ordinary skill in the art, particular case above-mentioned term concrete meaning in the present invention can be understood.
Below in conjunction with accompanying drawing 1-4, first the reaction chamber device according to the embodiment of the present invention is described.
As shown in Figure 1, be the structure iron of the reaction chamber device of the embodiment of the present invention.Fig. 2 is the structure iron of the reaction chamber device of another embodiment of the present invention.Chamber body 110, pallet 120 and diffuser is comprised according to the reaction chamber device of the embodiment of the present invention.In FIG, illustrate only the situation with a pallet 120, following examples are all described for a pallet 120, but the embodiment of the present invention also can be used for the situation of multiple pallet.
Wherein, reaction chamber 111 is limited with in chamber body 110.Pallet 120 to be arranged among reaction chamber 111 and rotatable.In one embodiment of the invention, such as pallet 120 can be made up of graphite or SiC, if the material of pallet 120 is graphite, then can be coated with SiC plated film outside pallet 120.Like this, pallet 120 can be made to have relatively better heat conductivility.
The diffuser of the embodiment of the present invention is used among described chamber body, form the first gas zones and the second gas zones that mutually replace, wherein, among described first gas zones, pass into process gas, among described second gas zones, pass into separation gas.That is, process gas and separation gas are passed in reaction chamber by the mode mutually replaced, two kinds of gas can relative formation replaces mutually in reaction chamber the gas zones as the first gas zones second gas zones thus, such as, as in Fig. 3 by dotted line the first gas zones of forming for sector region 1311 and by dotted line the second gas zones of forming, as sector region 1321.
As shown in Figure 1, in an example of the present invention, diffuser comprises air intake assembly 130, accordingly, reaction chamber device comprises gas deflation assembly 133, air intake assembly 130 is arranged in the perisporium 114 of chamber body 110, is arranged on particularly between inwall and outer wall, composition graphs 3, air intake assembly 130 comprises alternatively distributed gas spout 131 and gas spout 132 respectively, in this embodiment, passing into process gas from gas spout 131 in reaction chamber 111, such as, can be MO+ carrier gas and NH
3gas.In reaction chamber 111, separation gas is passed into, as N from gas spout 132
2or H
2gas.Composition graphs 1, within the centre hole that the gas deflation assembly 133 in this embodiment is positioned at pallet 120 and be tubular, correspondingly, the perisporium of tubular gas deflation assembly 133 is provided with through hole 1332, as be positioned at gas deflation assembly 133 perisporium in Fig. 1 arrow shown in.Like this, gas is by being discharged by the production well 1331 be arranged on bottom reaction chamber 111 after the through hole 1332 of gas deflation assembly 133.
Just in the mode of specific embodiment, the diffuser of the embodiment of the present invention and gas deflation assembly are described in detail below:
Embodiment 1
Be described in detail for the device of reaction chamber shown in Fig. 1.As shown in Figure 1, this reaction chamber device adopts surrounding air inlet, the structure of central discharge air.The pallet 120 putting substrate 121 is ring-type.Composition graphs 3, substrate 121 is placed in the circumferentially outer peripheral of pallet 120.Pallet 120 can rotate around the axial direction due of the centre hole of pallet 120, the region (sector region 1321 be made up of dotted line in Fig. 3) of the second gas that first gas zones (sector region 1311 be made up of dotted line in Fig. 3) that can be formed alternately across process gas in the process of rotating along with pallet 120 due to the substrate 121 on pallet 120 and separation gas are formed.Substrate 121 can at surface deposition film in the process of the first sector region 1311 formed through process gas, and in the process of the second sector region 1321 formed through separation gas, film can carry out transverse dispersion and avoid the longitudinal growth of substrate membrane, and this is because separation gas is by N
2or H
2gas is formed, can not forming reactions.Therefore film can be made more smooth, reduce the steepness of film.In addition, the process byproducts on all right automatic cleaning substrate 121 surface of separation gas, prepares for substrate enters next process gas zone, makes the quality of forming film of substrate 121 improve further, strengthen the technological effect of substrate 121.Certainly, those of ordinary skill in the art knows, the kind of process gas and separation gas is not limited to this.
Preferably, described in pass into the sector region of process gas area be greater than the area of the sector region passing into separation gas, like this, process gas utilization ratio can be improved, improve the speed of substrate 121 film forming simultaneously.
As shown in Figure 2, in an example of the present invention, this reaction chamber device such as also comprises device for sealing magnetic fluid 180 and rotating machine 190.
This device for sealing magnetic fluid 180 is connected with pallet 120, and this device for sealing magnetic fluid 180 1 aspect sealed reaction chamber, prevents gas leakage.On the other hand because rotating machine 190 is connected with device for sealing magnetic fluid 180 by Timing Belt 191, and drive device for sealing magnetic fluid 180 to rotate, therefore make device for sealing magnetic fluid 180 that pallet 120 can be driven to rotate.And then pallet 120 can around the centre hole axial-rotation of pallet 120 under the driving of rotating machine 190.
Composition graphs 2 again, in one embodiment of the invention, the material due to pallet 120 can be the graphite of SiC plated film, therefore, can also arrange well heater 140 under each pallet 120, well heater 140 can be pallet 120 and heats, and ensures that the surface temperature of pallet 120 reaches reaction temperature required.In addition, the reaction chamber device of the embodiment of the present invention such as can also comprise protective shield 150, and this protective shield 150 is arranged on the below of well heater 140.Diapire 113 parts can be protected like this.
As can be seen from Figure 2, one or more gas spout 134 is also set in the below of described well heater 140.Between the inwall that described gas spout 134 is arranged on described chamber body 110 and outer wall (lower part of the left and right perisporium in Fig. 2).In reaction chamber 111, shielding gas is entered by gas spout 134; shielding gas not only can make airflow field in reaction chamber 111 evenly; prevent process gas from contacting with internal partial wall and well heater 140 with the diapire 113 of reaction chamber 111; and then effectively protect diapire 113; parts such as well heater 140 grade, to extend the work-ing life of reaction chamber device.
In addition, composition graphs 2 again, the reaction chamber device of the embodiment of the present invention can also comprise rectiblock 160 and lifting motor 170.
Rectiblock 160 is positioned at the top of pallet 120.Lifting motor 170 controls rectiblock 160 vertically movement.Like this, the distance between rectiblock 160 and pallet 120 can regulate according to process requirements.And the graphite material that the material of rectiblock 160 also can be SiC plated film is made, thus, a good soak zones can be formed above substrate 121, be conducive to the homogeneity in temperature field above substrate 121.In addition, even if the chemical reaction by product between process gas is deposited on rectiblock 160 surface that graphite makes, also can not come off formation particle, therefore, ensures the quality of substrate 121 surface film thus can further improve the technological effect of substrate 121 film forming.
In one embodiment of the invention, this reaction chamber device also comprises water cooling plant 200, as shown in Figure 2, is equipped with water cooling plant 200 at the roof 112 of chamber body 110, diapire 113 and perisporium 114.Water cooling plant 200 for the protection of roof 112, diapire 113 and perisporium 114 from thermal-radiating injury.In addition, the water cooling plant 200 roof 112, diapire 113 and perisporium 114 installed can also prevent pre-reaction between process gas and thermolysis.
Embodiment 2
As shown in Figure 4, composition graphs 1, such as, also can pass into process gas by centre hole to surrounding to the reaction chamber device of another embodiment of the present invention.And by the perisporium 114 outwardly Exhaust Gas of reaction chamber device.
Composition graphs 5, as one embodiment of the present of invention, the shape of the air intake assembly 130 of diffuser can also be tubular, and within the centre hole being arranged on pallet 120, and air intake assembly 130 comprises alternatively distributed gas spout 131 and another gas spout 132, wherein, in reaction chamber, spray into process gas from gas spout 131, in reaction chamber, spray into separation gas from gas spout 132.
In one embodiment of the invention, the reaction chamber device of the embodiment of the present invention also comprises gas deflation assembly 133, gas deflation assembly 133 is arranged between the inwall of chamber body and outer wall to be in communication with the outside by reaction chamber 111, in an example of the present invention, as shown in Figure 5, gas deflation assembly 133 is gas exhaust duct, and runs through perisporium 114 in the perisporium 114 being arranged on reaction chamber device, realizes thus discharging reacted gas.
The structure of embodiment 2 diffuser and gas deflation assembly as different from Example 1, and other side is similar.
According to the reaction chamber device of the embodiment of the present invention, process gas and separation gas are passed in reaction chamber by the mode mutually replaced, particularly, process gas and separation gas can be passed into alternately along the perisporium of reaction chamber, two kinds of gases can form two regions (sector region 1321 that the sector region 1311 formed as process gas and separation gas are formed) mutually replaced in reaction chamber thus, multiple sector region 1311 is kept apart by sector region 1321, can be understood as in reaction process, process gas in each sector region 1311 reacts separately, therefore the crossed contamination of chemical reaction by product can effectively be reduced, and flow through alternately in the process of substrate surface at process gas and separation gas, the film that separation gas can be formed in process gas substrate carries out transverse dispersion, avoid the longitudinal growth of substrate membrane, like this, be conducive to the planarization of film, and separation gas can also clean the process byproducts of substrate surface, and then ensure the quality of film.In addition, because separation gas is to the help of substrate film forming, the infringement of process gas by product to substrate film forming is reduced relatively, therefore, this reaction chamber device reduces to extraneous rate request gaseous emission, like this, the flow velocity of process gas effectively can be reduced, and then the utilization ratio of lifting process gas.
The substrate processing equipment of the embodiment proposition of second aspect present invention, comprises reaction chamber device, and as shown in Figure 1 or 2, reaction chamber device is the reaction chamber device that above-mentioned first aspect embodiment proposes.Also comprise controller (not shown), controller controls the rotating speed of the pallet 120 of reaction chamber device.
Composition graphs 2, in one embodiment of the invention, such as controller also controls the lifting motor 170 of reaction chamber device, thus controls the distance between rectiblock 160 and pallet 120.Like this, the distance between rectiblock 160 and pallet 120 can regulate according to process requirements.And the graphite material that the material of rectiblock 160 also can be SiC plated film is made, thus, a good soak zones can be formed above substrate 121, be conducive to the homogeneity in temperature field above substrate 121.
According to the substrate processing equipment of the embodiment of the present invention, the flow velocity of process gas effectively can be reduced, and then the utilization ratio of lifting process gas, correspondingly, the rate of utilization of substrate processing equipment also effectively can be improved thus.In addition, by regulating the distance between rectiblock and pallet, the disturbance of airflow field to pallet effectively can be adjusted, therefore, the effect temperature compensation that the high speed rotating that can strengthen pallet brings, and then the temperature homogeneity improving tray surface.
In the description of this specification sheets, specific features, structure, material or feature that the description of reference term " embodiment ", " some embodiments ", " example ", " concrete example " or " some examples " etc. means to describe in conjunction with this embodiment or example are contained at least one embodiment of the present invention or example.In this manual, identical embodiment or example are not necessarily referred to the schematic representation of above-mentioned term.And the specific features of description, structure, material or feature can combine in an appropriate manner in any one or more embodiment or example.
Although illustrate and describe embodiments of the invention, those having ordinary skill in the art will appreciate that: can carry out multiple change, amendment, replacement and modification to these embodiments when not departing from principle of the present invention and aim, scope of the present invention is by claim and equivalency thereof.
Claims (14)
1. a film, is characterized in that, is realized by reaction chamber device, and described reaction chamber device comprises:
Chamber body, is limited with reaction chamber in described chamber body;
Pallet, described pallet has centre hole, and described pallet to be arranged among described reaction chamber and rotatable; With
Diffuser and gas deflation assembly, wherein: described diffuser is arranged in the perisporium of described chamber body, described gas deflation assembly is arranged within the centre hole of described pallet; Or described diffuser is arranged within the centre hole of described pallet, described gas deflation assembly to be arranged between the inwall of described chamber body and outer wall and to be in communication with the outside;
To be coordinated with gas deflation assembly by described diffuser and realize gas flow by described pallet stream periphery to center, or flow to periphery by described tray center, realize among described chamber body, form the first gas zones and the second gas zones that mutually replace, wherein, process gas is passed among described first gas zones, among described second gas zones, pass into separation gas, make to be positioned at the rotation of the substrate on described pallet with pallet alternately through described first gas zones and the second gas zones.
2. film according to claim 1, is characterized in that, the area of described first gas zones is greater than the area of described second gas zones.
3. film according to claim 1, is characterized in that, described pallet is annular.
4. film according to claim 1, is characterized in that, described diffuser comprises:
First air intake assembly, between the inwall that described first air intake assembly is arranged on described chamber body and outer wall, and described first air intake assembly comprises alternatively distributed first gas spout and the second gas spout, wherein, described first gas spout ejection process gas, described second gas spout ejection separation gas.
5. film according to claim 1, is characterized in that, described diffuser comprises:
Second air intake assembly, described second air intake assembly is tubular, and within the centre hole being arranged on pallet, and described second air intake assembly comprises alternatively distributed 3rd gas spout and the 4th gas spout, wherein, described 3rd gas spout ejection process gas, described 4th gas spout ejection separation gas.
6. film according to claim 1, is characterized in that, the material of described pallet is graphite, and is coated with SiC plated film outside described pallet.
7. film according to claim 1, is characterized in that, the roof of described chamber body, diapire and perisporium are equipped with water cooling plant.
8. film according to claim 1, is characterized in that, described reaction chamber device also comprises:
The well heater be positioned under each described pallet thinks that described pallet heats.
9. film according to claim 8, is characterized in that, described reaction chamber device also comprises:
Be positioned at the protective shield under described well heater.
10. film according to claim 8, is characterized in that, described reaction chamber device also comprises:
One or more 5th gas spout, between the inwall that described one or more 5th gas spout is arranged on described chamber body and outer wall, and described one or more 5th gas spout is positioned under described well heater.
11. films according to claim 1, is characterized in that, described reaction chamber device also comprises:
Be positioned at the rectiblock on described and multiple pallet; With
Lifting motor, described lifting motor controls the vertically movement of described rectiblock.
12. films according to claim 1, is characterized in that, described reaction chamber device also comprises:
Device for sealing magnetic fluid, described device for sealing magnetic fluid is connected with described pallet; With
Rotating machine, described rotating machine is connected with described device for sealing magnetic fluid by Timing Belt, and drives described device for sealing magnetic fluid to rotate.
13. 1 kinds of substrate processing equipments, is characterized in that, comprising:
Reaction chamber device, described reaction chamber device is reaction chamber device as claimed in claim 10; With
Controller, described controller controls the rotating speed of described pallet.
14. substrate processing equipments according to claim 13, is characterized in that, described controller also controls the lifting motor of described reaction chamber device to control the distance between described rectiblock and described pallet.
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| CN105925960B (en) * | 2016-06-07 | 2018-10-30 | 江苏微导纳米装备科技有限公司 | A kind of atomic layer deposition vacuum coater for solar battery sheet production |
| CN108624858A (en) * | 2017-03-23 | 2018-10-09 | 北京创昱科技有限公司 | Atmosphere isolation device and method between a kind of multi-chamber |
| CN109920717B (en) * | 2019-03-08 | 2022-06-17 | 拓荆科技股份有限公司 | Wafer processing device |
| CN111118475A (en) * | 2020-01-15 | 2020-05-08 | 中国科学院半导体研究所 | High-temperature device and method for growth and post-treatment of silicon carbide material |
| CN111636098A (en) * | 2020-07-07 | 2020-09-08 | 深圳市纳设智能装备有限公司 | CVD reaction module of silicon carbide epitaxial equipment |
| CN115595526A (en) * | 2021-07-09 | 2023-01-13 | 东莞令特电子有限公司（Cn） | Height adjustable mask tray assembly for arc spray application |
| CN113881931A (en) * | 2021-10-11 | 2022-01-04 | 湘潭大学 | CVD device and dispersed air intake method thereof |
| CN116334589B (en) * | 2023-03-22 | 2024-01-26 | 江苏微导纳米科技股份有限公司 | Substrate processing apparatus and processing method |
| CN116288279B (en) * | 2023-05-23 | 2023-08-18 | 中微半导体设备(上海)股份有限公司 | Vapor deposition device and substrate processing method |
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| JP2002280373A (en) * | 2001-03-19 | 2002-09-27 | Hitachi Kokusai Electric Inc | Substrate processing apparatus |
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| CN1377991A (en) * | 2002-01-30 | 2002-11-06 | 吉林大学 | MOCVD equipment and process for growing ZnO film |
| CN102002685A (en) * | 2009-09-01 | 2011-04-06 | 东京毅力科创株式会社 | Film formation apparatus and film formation method |
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