TW202031941A - Electroplating apparatus for depositing metal on the entire substrate with high electroplating rate and uniform plated film - Google Patents

Electroplating apparatus for depositing metal on the entire substrate with high electroplating rate and uniform plated film Download PDF

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TW202031941A
TW202031941A TW108106900A TW108106900A TW202031941A TW 202031941 A TW202031941 A TW 202031941A TW 108106900 A TW108106900 A TW 108106900A TW 108106900 A TW108106900 A TW 108106900A TW 202031941 A TW202031941 A TW 202031941A
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electroplating
holes
center
catholyte
anode
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TW108106900A
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Chinese (zh)
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TWI810250B (en
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賈照偉
楊宏超
陸陳華
王堅
王暉
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大陸商盛美半導體設備(上海)股份有限公司
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Abstract

Disclosed is an electroplating apparatus for depositing metal on a substrate, which comprises a membrane frame, a catholyte inlet pipe and a center cap. The membrane frame has a center passage which passes through the center of the membrane frame. The catholyte inlet pipe is connected to the center passage of the membrane frame. The center cap is fixed at the center of the membrane frame and covers the center passage of the membrane frame. The top of the center cap has a plurality of first holes. The catholyte inlet pipe supplies catholyte to the center cap through the center passage of the membrane frame, and the catholyte is supplied to a center area of the substrate through the first holes of the center cap.

Description

電鍍裝置 Electroplating device

本發明關於一種半導體積體電路製造設備,更具體地,關於一種用於金屬沉積的電鍍裝置。 The present invention relates to a semiconductor integrated circuit manufacturing equipment, and more specifically, to an electroplating device for metal deposition.

在半導體製造領域,電鍍是一種在基板上沉積金屬薄膜的常見方法。特別是在先進封裝技術中,由於電鍍具有工藝簡單、成本低、易於批量生產等優點,一般採用電鍍的方式在基板上形成銅柱、焊料凸點等實現晶片基板互連。遺憾的是,目前市場上的電鍍設備普遍存在電鍍率低的缺陷。電鍍率低意味著生產效率低,這是半導體企業所不能接受的。對於半導體企業來說,最大的投資成本來自於大量的製造設備。因此,如何優化設備生產力是降低成本最有效的途徑。 In the field of semiconductor manufacturing, electroplating is a common method of depositing metal films on substrates. Especially in advanced packaging technology, since electroplating has the advantages of simple process, low cost, easy mass production, etc., copper pillars and solder bumps are generally formed on the substrate by electroplating to realize wafer substrate interconnection. Unfortunately, the current electroplating equipment on the market generally has the defect of low electroplating rate. Low plating rate means low production efficiency, which is unacceptable for semiconductor companies. For semiconductor companies, the biggest investment cost comes from a large number of manufacturing equipment. Therefore, how to optimize equipment productivity is the most effective way to reduce costs.

為了提高電鍍速率,需要加強品質傳輸。圖23所示為形狀異常的銅柱。圖24所示為形狀正常的銅柱。當品質傳輸不足限制沉積速率從而造成銅柱的形狀異常。在電鍍過程中,當品質傳輸不足時,對於形成在柱狀通孔中的銅柱,電解液流動越強的區域電鍍速率越高,而其他區域電鍍速率相對較低。最後,電鍍結束後銅柱形狀異常。可以看出為了在整個基板上得到形狀正常的銅柱,在銅柱的各處,品 質傳輸都應該足夠大,且在整個基板上,品質傳輸也應該足夠大,以保證每個銅柱的形狀都正常,且基板上所有的銅柱有良好的一致性。 In order to increase the plating rate, quality transmission needs to be enhanced. Figure 23 shows a copper pillar with an abnormal shape. Figure 24 shows a copper pillar with a normal shape. When the quality transmission is insufficient, the deposition rate is limited and the shape of the copper pillar is abnormal. In the electroplating process, when the quality transmission is insufficient, for the copper pillars formed in the columnar through holes, the area where the electrolyte flows stronger, the higher the plating rate, while the other areas are relatively low. Finally, the shape of the copper pillar is abnormal after the electroplating. It can be seen that in order to obtain a copper pillar with a normal shape on the entire substrate, The mass transfer should be large enough, and on the entire substrate, the mass transfer should also be large enough to ensure that the shape of each copper pillar is normal and all the copper pillars on the substrate have good consistency.

一般來說,有多種方法用於增強品質傳輸,例如優化電鍍液的化學配方、提高電鍍液的溫度、增強電鍍液的攪動等。其中,一種常見的增強電鍍液攪動的方式包括:提高基板的旋轉速度、在電解液中使用攪拌器、提高電解液的流量。但由於離心力的作用,基板轉速的增加會導致基板邊緣鍍層增多,而基板中心鍍層減少。所以簡單地提高基板轉速會導致鍍層的不均勻性。攪拌器通常是一個可移動的槳。攪拌器以高頻率來回移動,很容易將氣泡困在電解液中。基板上的氣泡阻止電解液進入器件結構或柱狀通孔。關於提高電解液的流量,由於流量的增加是提供給整個基板,流量將以中心方式分佈並且流量將從基板中心旋轉到基板邊緣。因此,基板的中心將有較少的新鮮電解液補充。 Generally speaking, there are many methods for enhancing quality transmission, such as optimizing the chemical formula of the plating solution, increasing the temperature of the plating solution, and enhancing the agitation of the plating solution. Among them, a common way to enhance the agitation of the electroplating solution includes: increasing the rotation speed of the substrate, using a stirrer in the electrolyte, and increasing the flow rate of the electrolyte. However, due to the centrifugal force, the increase in the rotation speed of the substrate will result in an increase in the coating on the edge of the substrate and a decrease in the coating on the center of the substrate. So simply increasing the speed of the substrate will result in uneven plating. The agitator is usually a movable paddle. The stirrer moves back and forth at a high frequency, which easily traps bubbles in the electrolyte. The bubbles on the substrate prevent the electrolyte from entering the device structure or columnar through holes. Regarding increasing the flow rate of the electrolyte, since the increase in flow rate is provided to the entire substrate, the flow rate will be distributed in a central manner and the flow rate will rotate from the center of the substrate to the edge of the substrate. Therefore, there will be less fresh electrolyte supplement in the center of the substrate.

為了及時提供新鮮電解液和添加劑以滿足高電流密度的要求,需要向基板中心提供更多的電解液。否則,基板中心的柱體形狀異常或柱體的高度將會較低。事實上,不可能簡單地通過增加電流密度來提高電鍍速率,因為通過整個基板的電流密度是不均勻的,由於一種名為“終端效應”的現象,所以基板外緣的電流密度較高。這種電流密度的不均勻性導致基板邊緣電鍍速率較高,基板中心電鍍速率較低,從而進一步導致鍍膜的不均勻性。由於通過整個基板上的電流密度不均勻,如果在沒有任何結構改進的情況下, 簡單地通過增加電解液的流量來提高電鍍速率,將會使鍍膜的不均勻性更加嚴重。 In order to provide fresh electrolyte and additives in time to meet the requirements of high current density, more electrolyte needs to be provided to the center of the substrate. Otherwise, the shape of the column in the center of the substrate is abnormal or the height of the column will be low. In fact, it is impossible to increase the plating rate simply by increasing the current density, because the current density through the entire substrate is not uniform. Due to a phenomenon called "terminal effect", the current density at the outer edge of the substrate is higher. This non-uniformity of current density leads to a higher plating rate at the edge of the substrate and a lower plating rate at the center of the substrate, which further leads to uneven plating. Due to the uneven current density through the entire substrate, if there is no structural improvement, Simply increasing the electroplating rate by increasing the electrolyte flow rate will make the unevenness of the coating more serious.

對於電鍍設備來說,雖然化學物質是影響電鍍速率的一個因素,但電鍍速率主要與電解液在整個基板上的流量有關。為了達到高的電鍍速率,必須有大而穩定的電解液流供應給基板。但是,一旦電解液流量增加,就很難控制整個基板的電場和電解液流動的均勻性。 For electroplating equipment, although the chemical substance is a factor that affects the electroplating rate, the electroplating rate is mainly related to the flow of the electrolyte on the entire substrate. In order to achieve a high plating rate, a large and stable electrolyte flow must be supplied to the substrate. However, once the electrolyte flow rate increases, it is difficult to control the uniformity of the electric field and electrolyte flow across the entire substrate.

本發明的目的是揭示一種電鍍裝置,用於在整個基板上以較高的電鍍速率和均勻的鍍膜沉積金屬。 The purpose of the present invention is to disclose an electroplating device for depositing metal on the entire substrate with a higher electroplating rate and a uniform coating.

根據本發明的一個實施例,提出一種電鍍裝置,包括膜架、陰極電解液進液管和中心帽。膜架具有穿過膜架中心的中心通道。陰極電解液進液管與膜架的中心通道相連接。中心帽固定在膜架的中心且覆蓋膜架的中心通道。中心帽的頂部設有多個第一孔。陰極電解液進液管通過膜架的中心通道向中心帽供應陰極電解液,陰極電解液通過中心帽的第一孔供應到基板的中心區域。 According to an embodiment of the present invention, an electroplating device is provided, which includes a membrane holder, a catholyte inlet pipe and a center cap. The membrane frame has a central channel passing through the center of the membrane frame. The catholyte inlet pipe is connected with the central channel of the membrane frame. The center cap is fixed at the center of the film frame and covers the center channel of the film frame. The top of the center cap is provided with a plurality of first holes. The catholyte inlet pipe supplies the catholyte to the central cap through the central channel of the membrane frame, and the catholyte is supplied to the central area of the substrate through the first hole of the central cap.

綜上所述,本發明的電鍍裝置利用中心帽來提高基板中心區域的電解液流量及電場的均勻性,從而提高整個基板上鍍膜的均勻性。因此,在電鍍過程中,可以提高陰極電解液進液管內的陰極電解液的流量,從而提高電鍍速率。 In summary, the electroplating device of the present invention uses the center cap to improve the electrolyte flow rate and the uniformity of the electric field in the center area of the substrate, thereby improving the uniformity of the coating on the entire substrate. Therefore, during the electroplating process, the flow rate of the catholyte in the catholyte inlet pipe can be increased, thereby increasing the electroplating rate.

10‧‧‧工藝腔體 10‧‧‧Craft cavity

11‧‧‧陽極腔 11‧‧‧Anode cavity

12‧‧‧陰極腔 12‧‧‧Cathode cavity

13‧‧‧膜 13‧‧‧membrane

14‧‧‧膜架 14‧‧‧Film frame

15‧‧‧固定板 15‧‧‧Fixed plate

16‧‧‧第一密封環 16‧‧‧First sealing ring

17‧‧‧第二密封環 17‧‧‧Second sealing ring

18‧‧‧固定件 18‧‧‧Fixture

19‧‧‧第三密封環 19‧‧‧Third sealing ring

20‧‧‧基座 20‧‧‧Base

30‧‧‧陰極電解進液管 30‧‧‧Catholyte inlet pipe

31‧‧‧第四密封環 31‧‧‧Fourth sealing ring

32‧‧‧第五密封環 32‧‧‧Fifth seal ring

40‧‧‧中心帽 40‧‧‧Center cap

41‧‧‧通孔 41‧‧‧Through hole

42‧‧‧第一孔 42‧‧‧First hole

43‧‧‧第二孔 43‧‧‧Second hole

44‧‧‧安裝孔 44‧‧‧Mounting hole

45‧‧‧O形密封環 45‧‧‧O-ring seal

50‧‧‧可調構件 50‧‧‧Adjustable component

51‧‧‧基體 51‧‧‧Matrix

52‧‧‧阻塞部 52‧‧‧Blocking Department

53‧‧‧槽形開口 53‧‧‧Slot opening

60‧‧‧第一擴散板 60‧‧‧First diffuser

61‧‧‧孔 61‧‧‧Hole

62‧‧‧密封環 62‧‧‧Seal ring

70‧‧‧第二擴散板 70‧‧‧Second diffuser

71‧‧‧孔 71‧‧‧Hole

72‧‧‧密封環 72‧‧‧Seal ring

80‧‧‧中間板 80‧‧‧Intermediate plate

80’‧‧‧中間板 80’‧‧‧Intermediate plate

80”‧‧‧中間板 80"‧‧‧Intermediate plate

801‧‧‧凸部 801‧‧‧Protrusion

802‧‧‧凹部 802‧‧‧Recess

82‧‧‧密封環 82‧‧‧Seal ring

90‧‧‧定位件 90‧‧‧Positioning piece

100‧‧‧卡盤 100‧‧‧Chuck

101‧‧‧環形基部 101‧‧‧Annular base

111‧‧‧陽極區域 111‧‧‧Anode area

112‧‧‧隔牆 112‧‧‧Partition wall

113‧‧‧環形陽極 113‧‧‧Annular anode

114‧‧‧電源通道 114‧‧‧Power Channel

115‧‧‧防護罩 115‧‧‧Protection Cover

116‧‧‧陽極電解液入口 116‧‧‧Anolyte inlet

117‧‧‧陽極電解液出口 117‧‧‧Anolyte outlet

118‧‧‧排放孔 118‧‧‧Drain hole

119‧‧‧排放通道 119‧‧‧Exhaust Channel

120‧‧‧立柱 120‧‧‧Column

121‧‧‧內壁 121‧‧‧Inner Wall

122‧‧‧外壁 122‧‧‧Outer Wall

123‧‧‧凹槽 123‧‧‧ groove

124‧‧‧槽口 124‧‧‧notch

125‧‧‧電解液出口 125‧‧‧Electrolyte outlet

126‧‧‧基板清洗噴頭 126‧‧‧Substrate cleaning nozzle

141‧‧‧陰極電解液進口 141‧‧‧Catholyte inlet

142‧‧‧支管 142‧‧‧Branch

143‧‧‧噴射孔 143‧‧‧Spray hole

144‧‧‧中心通道 144‧‧‧Central Channel

145‧‧‧容置腔 145‧‧‧Containing cavity

146‧‧‧固定孔 146‧‧‧fixing hole

147‧‧‧間隙 147‧‧‧Gap

1010‧‧‧護罩 1010‧‧‧Shield

1011‧‧‧收集槽 1011‧‧‧Collection tank

1012‧‧‧排液通道 1012‧‧‧Drain channel

1013‧‧‧清洗液進口 1013‧‧‧Cleaning fluid inlet

1020‧‧‧卡盤清喜噴嘴 1020‧‧‧Chuck Qingxi Nozzle

1030‧‧‧排氣口 1030‧‧‧Exhaust port

1040‧‧‧液位感測器 1040‧‧‧Liquid level sensor

1115‧‧‧唇形密封部 1115‧‧‧Lip seal

1161‧‧‧陽極電解液進液管 1161‧‧‧Anolyte inlet pipe

1162‧‧‧第三閥門 1162‧‧‧The third valve

1171‧‧‧陽極電解液出液管 1171‧‧‧Anolyte Outlet Pipe

1172‧‧‧第四閥門 1172‧‧‧Fourth valve

1173‧‧‧去離子水出液管 1173‧‧‧Deionized water outlet pipe

1174‧‧‧第五閥門 1174‧‧‧Fifth valve

1191‧‧‧排放管 1191‧‧‧Exhaust pipe

1192‧‧‧第二閥門 1192‧‧‧Second valve

1193‧‧‧去離子水進液管 1193‧‧‧Deionized water inlet pipe

1194‧‧‧第一閥門 1194‧‧‧First valve

2011‧‧‧指形部 2011‧‧‧Finger Shape

圖1揭示了本發明電鍍裝置的立體圖。 Figure 1 discloses a perspective view of the electroplating device of the present invention.

圖2揭示了圖1所示的電鍍裝置的剖視圖。 Fig. 2 discloses a cross-sectional view of the electroplating device shown in Fig. 1.

圖3揭示了圖1所示的電鍍裝置的另一剖視圖。 Fig. 3 discloses another cross-sectional view of the electroplating device shown in Fig. 1.

圖4揭示了圖1所示的電鍍裝置的又一剖視圖。 Fig. 4 discloses another cross-sectional view of the electroplating device shown in Fig. 1.

圖5揭示了圖1所示的電鍍裝置的部分元件的剖視圖。 Fig. 5 discloses a cross-sectional view of part of the elements of the electroplating device shown in Fig. 1.

圖6揭示了圖5所示的電鍍裝置的部分元件的爆炸圖。 Fig. 6 discloses an exploded view of some elements of the electroplating device shown in Fig. 5.

圖7揭示了圖5所示的電鍍裝置的部分元件的局部放大圖。 FIG. 7 discloses a partial enlarged view of some elements of the electroplating device shown in FIG. 5.

圖8揭示了本發明電鍍裝置的膜架的立體圖。 Figure 8 discloses a perspective view of the film frame of the electroplating device of the present invention.

圖9揭示了圖8所示的電鍍裝置的膜架的剖視圖。 FIG. 9 discloses a cross-sectional view of the film holder of the electroplating device shown in FIG. 8.

圖10揭示了本發明電鍍裝置的中心帽的立體圖。 Figure 10 shows a perspective view of the central cap of the electroplating device of the present invention.

圖11揭示了本發明電鍍裝置的中心帽的另一立體圖。 Figure 11 shows another perspective view of the center cap of the electroplating device of the present invention.

圖12揭示了本發明電鍍裝置的可調構件的立體圖 Figure 12 discloses a perspective view of the adjustable component of the electroplating device of the present invention

圖13揭示了本發明電鍍裝置的第一擴散板的立體圖。 Fig. 13 discloses a perspective view of the first diffuser plate of the electroplating device of the present invention.

圖14揭示了本發明電鍍裝置的第二擴散板的立體圖。 Fig. 14 discloses a perspective view of the second diffuser plate of the electroplating device of the present invention.

圖15揭示了本發明電鍍裝置的中間板的立體圖。 Figure 15 shows a perspective view of the middle plate of the electroplating device of the present invention.

圖16揭示了本發明電鍍裝置的卡盤的立體圖。 Fig. 16 discloses a perspective view of the chuck of the electroplating device of the present invention.

圖17揭示了用於清洗卡盤的卡盤清洗噴嘴的立體圖。 Fig. 17 discloses a perspective view of a chuck cleaning nozzle for cleaning the chuck.

圖18揭示了卡盤的剖視圖。 Figure 18 discloses a cross-sectional view of the chuck.

圖19揭示了圖18所示卡盤的局部放大圖。 Fig. 19 discloses a partial enlarged view of the chuck shown in Fig. 18.

圖20揭示了本發明電鍍裝置的簡化示意圖。 Figure 20 discloses a simplified schematic diagram of the electroplating apparatus of the present invention.

圖21揭示了間隙變化與鍍柱高度之間的關係。 Figure 21 reveals the relationship between the gap change and the height of the plating column.

圖22揭示了使用中間板時的邊緣電鍍資料。 Figure 22 reveals the edge plating material when using the middle plate.

圖23揭示了形狀異常的銅柱。 Figure 23 reveals an abnormally shaped copper pillar.

圖24揭示了形狀正常的銅柱。 Figure 24 reveals a copper pillar with a normal shape.

參考圖1至圖7所示,揭示了根據本發明一示例性實施例的電鍍裝置。該電鍍裝置包括工藝腔體10。工藝腔體10由基座20支撐。工藝腔體10被分為陽極腔11和陰極腔12。陽極腔11與陰極腔12由固定在膜架14上的膜13隔開。 Referring to FIG. 1 to FIG. 7, an electroplating apparatus according to an exemplary embodiment of the present invention is disclosed. The electroplating device includes a process chamber 10. The process chamber 10 is supported by a base 20. The process chamber 10 is divided into an anode chamber 11 and a cathode chamber 12. The anode cavity 11 and the cathode cavity 12 are separated by a membrane 13 fixed on a membrane frame 14.

陽極腔11被分成多個陽極區域111且每兩個相鄰的陽極區域111由豎直排列的隔牆112分隔。隔牆112的材質可以從具有不導電的和抗化學腐蝕的塑膠中選擇。隔牆112分隔電場並限制電解液流體場。在一個實施例中,舉例而言,非限制本發明,陽極腔11被分成兩個陽極區域111。每個陽極區域111容納一個環形陽極113,該環形陽極113與獨立控制的電源通道114相連接。電鍍電流或電壓由電源通道114獨立地施加到每一個環形陽極113上。每一個電源通道114與電源相連接,該電源可以是直流電源或是脈衝電源。電源通道114位於防護罩115中。環形陽極113由可溶性材料製成,例如銅、鎳、錫。也可以選擇惰性材料製成環形陽極113。每一個陽極區域111具有獨立的陽極電解液入口116,該陽極電解液入口116與電解液流量控制裝置相連,以向該陽極區域111提供陽極電解液。同時,每一個陽 極區域111具有獨立的陽極電解液出口117以將該陽極區域111中的舊的電解液、分解產物及粒子排出。 The anode cavity 11 is divided into a plurality of anode regions 111 and every two adjacent anode regions 111 are separated by a partition wall 112 arranged vertically. The material of the partition wall 112 can be selected from non-conductive and chemical-resistant plastics. The partition wall 112 separates the electric field and limits the electrolyte fluid field. In one embodiment, for example, and not limiting the present invention, the anode cavity 11 is divided into two anode regions 111. Each anode area 111 contains an annular anode 113 which is connected to an independently controlled power supply channel 114. The electroplating current or voltage is independently applied to each annular anode 113 by the power supply channel 114. Each power channel 114 is connected to a power source, which can be a DC power source or a pulse power source. The power channel 114 is located in the protective cover 115. The ring anode 113 is made of a soluble material, such as copper, nickel, and tin. The ring anode 113 can also be made of inert materials. Each anode area 111 has an independent anolyte inlet 116, and the anolyte inlet 116 is connected to an electrolyte flow control device to provide anolyte to the anode area 111. At the same time, every yang The pole region 111 has an independent anolyte outlet 117 to discharge old electrolyte, decomposition products and particles in the anode region 111.

膜13是用於銅、鎳、錫電鍍的陽離子膜。此外,膜13也可以是質子交換膜或是適用於合金電鍍的覆蓋有織物結構的常用膜。膜13固定在膜架14上。環形固定板15用於將膜13的外邊緣固定在膜架14上。第一密封環16設置在膜13的外邊緣和膜架14之間。第二密封環17設置在膜13的外邊緣和環形固定板15之間。多個固定件18,例如螺絲,將膜架14、第一密封環16、膜13、第二密封環17及環形固定板15固定在工藝腔體10上,以將陽極腔11和陰極腔12分隔開。第三密封環19設置在環形固定板15和工藝腔體10之間。 The film 13 is a cationic film used for copper, nickel, and tin electroplating. In addition, the membrane 13 may also be a proton exchange membrane or a common membrane covered with a fabric structure suitable for alloy plating. The membrane 13 is fixed on the membrane holder 14. The annular fixing plate 15 is used to fix the outer edge of the film 13 on the film holder 14. The first sealing ring 16 is arranged between the outer edge of the membrane 13 and the membrane holder 14. The second sealing ring 17 is provided between the outer edge of the membrane 13 and the annular fixing plate 15. A plurality of fixing members 18, such as screws, fix the membrane frame 14, the first sealing ring 16, the membrane 13, the second sealing ring 17, and the annular fixing plate 15 on the process chamber 10 to connect the anode cavity 11 and the cathode cavity 12 Separate. The third sealing ring 19 is arranged between the annular fixed plate 15 and the process chamber 10.

陰極電解液進液管30安裝在膜架14的中心以向陰極腔12供應陰極電解液。第四密封環31設置在膜13的內邊緣和陰極電解液進液管30之間。第五密封環32設置在膜13的內邊緣和膜架14之間。 The catholyte inlet pipe 30 is installed in the center of the membrane frame 14 to supply catholyte to the cathode cavity 12. The fourth sealing ring 31 is arranged between the inner edge of the membrane 13 and the catholyte inlet pipe 30. The fifth sealing ring 32 is arranged between the inner edge of the membrane 13 and the membrane holder 14.

如圖4所示,陽極區域111之間沒有完全隔離。隔牆112的頂部和膜13之間有一定距離用於氣泡通過。陽極腔11的側壁設有多個接近膜13的排放孔118。每個排放孔118連接一排放通道119。陽極區域111內的氣泡由膜13收集並引導至排放孔118,然後從排放通道119排出。 As shown in FIG. 4, the anode regions 111 are not completely isolated. There is a certain distance between the top of the partition wall 112 and the membrane 13 for air bubbles to pass through. The side wall of the anode cavity 11 is provided with a plurality of discharge holes 118 close to the membrane 13. Each discharge hole 118 is connected to a discharge channel 119. The air bubbles in the anode region 111 are collected by the membrane 13 and guided to the discharge hole 118, and then discharged from the discharge channel 119.

參考圖20所示的電鍍裝置的簡化示意圖,主要示意了陽極電解液循環及環形陽極113的自動清洗。在電鍍過程中,打開設置在陽極電解液進液管1161上的第三閥門 1162。陽極電解液進液管1161連接陽極電解液入口116。與此同時,打開設置在排放管1191上的第二閥門1192。排放管1191連接排放通道119。陽極電解液通過陽極電解液進液管1161及陽極電解液入口116供應至陽極區域111,然後通過排放孔118、排放通道119及排放管1191排出以實現陽極電解液的循環。當電鍍工藝達到預先設定的條件時,例如,工藝時間超過200小時,就需要清洗環形陽極113。為了清洗環形陽極113,首先,關閉第三閥門1162及第二閥門1192,停止陽極電解液的循環。然後,打開設置在陽極電解液出液管1171上的第四閥門1172。陽極電解液出液管1171連接陽極電解液出口117。陽極區域111中的陽極電解液通過陽極電解液出口117及陽極電解液出液管1171排出。之後,關閉第四閥門1172。打開設置在去離子水進液管1193上的第一閥門1194和設置在去離子水出液管1173上的第五閥門1174。去離子水進液管1193連接排放通道119。去離子水出液管1173連接陽極電解液出口117。去離子水(DIW:deionized water)通過去離子水進液管1193、排放通道119及排放孔118供應至陽極腔11的陽極區域111來沖洗環形陽極113,之後通過陽極電解液出口117及去離子水出液管1173排出來去除陽極泥。去離子水的流量控制在0.5lpm至10lpm的範圍內。還有另外的方法可以清洗環形陽極113,包括如下步驟:打開第一閥門1194,向陽極腔11供應一定量的去離子水;關閉第一閥門1194;打開第五閥門1174,排出去離子水並去除陽極泥;關閉第 五閥門1174;重複這些步驟直到環形陽極113被清洗乾淨。在圖20中,只展示了一個陽極區域111。應該認識到,其他陽極區域111中的陽極電解液循環和環形陽極113的自動清洗與所述示例一樣。 Referring to the simplified schematic diagram of the electroplating device shown in FIG. 20, the circulation of the anolyte and the automatic cleaning of the ring anode 113 are mainly illustrated. During the electroplating process, open the third valve set on the anolyte inlet pipe 1161 1162. The anolyte inlet pipe 1161 is connected to the anolyte inlet 116. At the same time, the second valve 1192 provided on the discharge pipe 1191 is opened. The discharge pipe 1191 is connected to the discharge passage 119. The anolyte is supplied to the anode region 111 through the anolyte inlet pipe 1161 and the anolyte inlet 116, and then discharged through the discharge hole 118, the discharge channel 119 and the discharge pipe 1191 to realize the circulation of the anolyte. When the electroplating process reaches a preset condition, for example, the process time exceeds 200 hours, the ring anode 113 needs to be cleaned. In order to clean the annular anode 113, first, the third valve 1162 and the second valve 1192 are closed to stop the circulation of the anolyte. Then, the fourth valve 1172 provided on the anolyte outlet pipe 1171 is opened. The anolyte outlet pipe 1171 is connected to the anolyte outlet 117. The anolyte in the anode region 111 is discharged through the anolyte outlet 117 and the anolyte outlet pipe 1171. After that, the fourth valve 1172 is closed. The first valve 1194 provided on the deionized water inlet pipe 1193 and the fifth valve 1174 provided on the deionized water outlet pipe 1173 are opened. The deionized water inlet pipe 1193 is connected to the discharge channel 119. The deionized water outlet pipe 1173 is connected to the anolyte outlet 117. Deionized water (DIW) is supplied to the anode region 111 of the anode cavity 11 through the deionized water inlet pipe 1193, the discharge channel 119 and the discharge hole 118 to flush the annular anode 113, and then passes through the anolyte outlet 117 and deionized The water outlet pipe 1173 is discharged to remove the anode mud. The flow rate of deionized water is controlled within the range of 0.5 lpm to 10 lpm. There are other methods to clean the ring anode 113, including the following steps: open the first valve 1194 to supply a certain amount of deionized water to the anode cavity 11; close the first valve 1194; open the fifth valve 1174 to discharge the deionized water and Remove anode slime; close the Five valves 1174; these steps are repeated until the annular anode 113 is cleaned. In Fig. 20, only one anode region 111 is shown. It should be recognized that the circulation of the anolyte in the other anode regions 111 and the automatic cleaning of the annular anode 113 are the same as in the described example.

帶有膜13的膜架14橫向佈置以分隔陽極腔11與陰極腔12。參考圖8和圖9所示,膜架14是剛性穿孔或網狀框架。膜架14基本上呈碟形並且在其中間設有陰極電解液進口141。陰極電解液進口141連接陰極電解液進液管30。膜架14還設有多個從膜架14的中心延伸到膜架14的邊緣的支管142。各支管142與陰極電解液進口141相連接。每個支管142設有多個噴射孔143。各支管142上的多個噴射孔143的直徑可以相同也可以不同。由於在基板上,隨著半徑的增大,面積增大,需要更多的流量來滿足電鍍傳質的要求。因此,噴射孔143的直徑從膜架14的中心到邊緣逐漸增大。例如,對應50mm的半徑,噴射孔143的直徑是2mm,而對應100mm的半徑,噴射孔143的直徑是4mm,而對應150mm的半徑,噴射孔143的直徑是6mm,以此類推。另一種方式,各支管142上的噴射孔143的密度可以相同也可以不同。噴射孔143的密度從膜架14的中心到邊緣逐漸增大。根據一實施例,每個噴射孔143的開口方向相對於垂直平面傾斜,避免陰極電解液噴射到同一個地方造成衝擊。每個支管142上的這些多個噴射孔143可以被分成兩組。這兩組噴射孔143的開口方向是相反的。或者,每個支管142上的每 兩個相鄰的噴射孔143的開口方向是相反的。在一個實施例中,膜架14具有6根支管142用於使流量均勻分佈。 The membrane frame 14 with the membrane 13 is arranged laterally to separate the anode cavity 11 and the cathode cavity 12. Referring to Figures 8 and 9, the film frame 14 is a rigid perforated or mesh frame. The membrane frame 14 is substantially dish-shaped and has a catholyte inlet 141 in the middle. The catholyte inlet 141 is connected to the catholyte inlet pipe 30. The film frame 14 is also provided with a plurality of branch pipes 142 extending from the center of the film frame 14 to the edge of the film frame 14. Each branch pipe 142 is connected to the catholyte inlet 141. Each branch pipe 142 is provided with a plurality of injection holes 143. The diameter of the multiple injection holes 143 on each branch pipe 142 may be the same or different. As on the substrate, as the radius increases, the area increases, and more flow is needed to meet the electroplating mass transfer requirements. Therefore, the diameter of the injection hole 143 gradually increases from the center to the edge of the film holder 14. For example, corresponding to a radius of 50 mm, the diameter of the injection hole 143 is 2 mm, and corresponding to a radius of 100 mm, the diameter of the injection hole 143 is 4 mm, and corresponding to a radius of 150 mm, the diameter of the injection hole 143 is 6 mm, and so on. In another way, the density of the injection holes 143 on each branch pipe 142 may be the same or different. The density of the injection holes 143 gradually increases from the center to the edge of the film holder 14. According to an embodiment, the opening direction of each injection hole 143 is inclined with respect to the vertical plane to prevent the catholyte from being sprayed to the same place and causing impact. The plurality of spray holes 143 on each branch pipe 142 may be divided into two groups. The opening directions of the two groups of injection holes 143 are opposite. Or, every branch on each branch 142 The opening directions of two adjacent injection holes 143 are opposite. In one embodiment, the membrane frame 14 has 6 branch pipes 142 for uniform flow distribution.

膜架14具有穿過膜架14中心的中心通道144。容置腔145設置在膜架14的中心。中心通道144的底端連接陰極電解液進口141,中心通道144的頂端連接容置腔145。膜架14在容置腔145內還設有多個固定孔146。 The film frame 14 has a central channel 144 passing through the center of the film frame 14. The accommodating cavity 145 is provided in the center of the film frame 14. The bottom end of the central channel 144 is connected to the catholyte inlet 141, and the top end of the central channel 144 is connected to the containing cavity 145. The film frame 14 is further provided with a plurality of fixing holes 146 in the containing cavity 145.

因為在直徑約為0-60毫米的基板中心區域內的電鍍很難控制,尤其是基板中心區域內的電解液流量和電場的均勻性很難控制,為了解決這一問題並突破中心區域的電鍍對整個電鍍的限制,本發明的電鍍裝置進一步包括中心帽40及可調構件50。中心帽40固定在膜架14的容置腔145內。參考圖10和圖11所示,中心帽40的中心設有通孔41。中心帽40的頂部設有多個呈放射狀排布的第一孔42,用於使得流量均勻分佈。該多個第一孔42的直徑可以是一致的也可以是不一致的。由於在基板上,隨著半徑的增大,面積增大,需要更多的流量來滿足電鍍傳質的要求。因此,第一孔42的直徑從中心帽40的中心到邊緣逐漸增大。另一種方式,中心帽40上的第一孔42的密度也可以是一樣或是不一樣。第一孔42的密度從中心帽40的中心到邊緣逐漸增大。較佳地,中心帽40的側壁設有多個第二孔43。每個第二孔43的開口方向都是斜向上的。在電鍍過程中,如果僅是中心帽40的頂部設有第一孔42,當陰極電解液從第一孔42噴射到陰極腔12時,可能會在中心帽40周圍區域形成氣穴,且中心帽40周圍的電解液流量不夠。通過在中心帽40的側 壁設置第二孔43則可以解決這一問題。分佈在中心帽40的側壁上的第二孔43的直徑和密度可以不同於分佈在中心帽40的頂部的第一孔42的直徑和密度。 Because it is difficult to control electroplating in the central area of the substrate with a diameter of about 0-60 mm, especially the electrolyte flow rate and the uniformity of the electric field in the central area of the substrate are difficult to control. For the limitation of the entire electroplating, the electroplating device of the present invention further includes a center cap 40 and an adjustable member 50. The central cap 40 is fixed in the containing cavity 145 of the film frame 14. 10 and 11, the center of the center cap 40 is provided with a through hole 41. The top of the center cap 40 is provided with a plurality of first holes 42 arranged in a radial manner for uniform flow distribution. The diameters of the plurality of first holes 42 may be uniform or inconsistent. As on the substrate, as the radius increases, the area increases, and more flow is needed to meet the electroplating mass transfer requirements. Therefore, the diameter of the first hole 42 gradually increases from the center of the center cap 40 to the edge. In another way, the density of the first holes 42 on the center cap 40 can also be the same or different. The density of the first holes 42 gradually increases from the center of the center cap 40 to the edge. Preferably, the side wall of the center cap 40 is provided with a plurality of second holes 43. The opening direction of each second hole 43 is diagonally upward. During the electroplating process, if only the top of the center cap 40 is provided with the first hole 42, when the catholyte is sprayed from the first hole 42 to the cathode cavity 12, air pockets may be formed in the area around the center cap 40 and the center The electrolyte flow around the cap 40 is insufficient. Through the side of the center cap 40 The second hole 43 in the wall can solve this problem. The diameter and density of the second holes 43 distributed on the sidewall of the central cap 40 may be different from the diameter and density of the first holes 42 distributed on the top of the central cap 40.

中心帽40的頂部設有多個安裝孔44。利用多個螺絲將中心帽40固定在膜架14的容置腔145內。該多個螺絲分別插入中心帽40的安裝孔44和膜架14的固定孔146內。O形密封環45設置在中心帽40和膜架14之間。陰極電解液通過陰極電解液進液管30,陰極電解液進口141及中心通道144供應至各支管142及中心帽40。陰極電解液通過各支管142上的噴射孔143及中心帽40上的第一孔42和第二孔43噴射至陰極腔12。陰極電解液進液管30內的陰極電解液的流量能夠達到30LPM(升/分鐘)以上,通常在2LPM至60LPM的範圍內。雖然陰極電解液的流量增大了,由於中心帽40及膜架14的各支管142的新穎設計,提高了整個基板的電解液流量和電場均勻性,進一步提高了整個基板的鍍膜均勻性。此外,由於可以獲得大且穩定的電解液流量,所以相較於傳統的電鍍裝置,電鍍速率得到提高。如果沒有中心帽40,由於陰極電解液從陰極電解液進液管30和陰極電解液進口141直接向上沖出,流動速度快,衝擊力大,造成基板中心區域噴射現象,進一步導致基板中心區域的鍍柱的形狀異常。通過設置中心帽40及增加第一孔42和第二孔43的數量,流量會減緩且衝擊力會減小。另一方面,通過第一孔42與第二孔43的分佈能夠調節陰極電解液的流量,進一步提高了基板中心區域陰極電解液的均勻性。 The top of the center cap 40 is provided with a plurality of mounting holes 44. A plurality of screws are used to fix the central cap 40 in the accommodating cavity 145 of the film frame 14. The screws are inserted into the mounting hole 44 of the center cap 40 and the fixing hole 146 of the film frame 14 respectively. An O-shaped sealing ring 45 is provided between the center cap 40 and the film frame 14. The catholyte is supplied to each branch pipe 142 and the central cap 40 through the catholyte inlet pipe 30, the catholyte inlet 141 and the central channel 144. The catholyte is sprayed into the cathode cavity 12 through the spray holes 143 on each branch pipe 142 and the first hole 42 and the second hole 43 on the center cap 40. The flow rate of the catholyte in the catholyte inlet pipe 30 can reach more than 30 LPM (liters per minute), usually in the range of 2 LPM to 60 LPM. Although the flow rate of the catholyte is increased, due to the novel design of the central cap 40 and the branches 142 of the film frame 14, the electrolyte flow rate and the uniformity of the electric field of the entire substrate are improved, and the coating uniformity of the entire substrate is further improved. In addition, since a large and stable electrolyte flow rate can be obtained, the electroplating rate is improved compared to the traditional electroplating device. If there is no center cap 40, since the catholyte is directly flushed upwards from the catholyte inlet pipe 30 and the catholyte inlet 141, the flow speed is fast and the impact force is large, causing the ejection phenomenon in the central area of the substrate, which further leads to the phenomenon of the central area of the substrate. The shape of the plated column is abnormal. By providing the center cap 40 and increasing the number of the first holes 42 and the second holes 43, the flow rate will be slowed down and the impact force will be reduced. On the other hand, the distribution of the first holes 42 and the second holes 43 can adjust the flow rate of the catholyte, which further improves the uniformity of the catholyte in the central area of the substrate.

參考圖12所示,可調構件50被配置為調節提供至中心帽40的陰極電解液的流量,進一步調節提供至基板中心區域的陰極電解液流量。可調構件50插入中心帽40的通孔41內並位於膜架14的中心通道144的頂端以控制中心流量。可調構件50能夠完全阻塞膜架14的中心通道144的頂端,因此陰極電解液不能提供至中心帽40。通過逐漸向上提升可調構件50,中心通道144的頂端開口逐漸打開,因此陰極電解液通過形成在可調構件50與中心通道144之間的間隙147供應至中心帽40。因此,提供至基板中心區域的陰極電解液的流量能夠通過改變間隙147的大小來調節。通過升高或降低可調構件50能夠改變間隙147的大小。根據一個實施例,可調構件50包括基體51及形成在基體51底部的阻塞部52。基體51為圓柱形。阻塞部52為倒錐狀。基體51的頂部設有槽形開口53,便於使用如螺絲刀等工具旋轉可調構件50,因此可調構件50在中心帽40的通孔41內向上或向下移動以調節間隙147的大小,從而調節提供至中心帽40的陰極電解液的流量,進而調節提供至基板中心區域的陰極電解液的流量。可以看出,提供給中心帽40的陰極電解液的流量由可調構件50獨立控制。可調構件50可以是固定螺絲。此外,當陰極電解液進液管30內的陰極電解液的流量給定時,如果供給中心帽40的陰極電解液的流量小,那麼提供給膜架14的各支管142的陰極電解液的流量則大。反之,如果提供給中心帽40的陰極電解液的流量大,那麼提供給膜架14的各支管142的陰極電解液的流量則小。因此, 提供給中心帽40的陰極電解液的流量和提供給膜架14的各支管142的陰極電解液的流量是可以調節的。 Referring to FIG. 12, the adjustable member 50 is configured to adjust the flow rate of the catholyte provided to the center cap 40, and further adjust the flow rate of the catholyte provided to the central area of the substrate. The adjustable member 50 is inserted into the through hole 41 of the center cap 40 and is located at the top of the center channel 144 of the membrane holder 14 to control the center flow. The adjustable member 50 can completely block the top end of the central channel 144 of the membrane holder 14, so the catholyte cannot be supplied to the central cap 40. By gradually lifting the adjustable member 50 upward, the top opening of the center channel 144 is gradually opened, so the catholyte is supplied to the center cap 40 through the gap 147 formed between the adjustable member 50 and the center channel 144. Therefore, the flow rate of the catholyte provided to the central area of the substrate can be adjusted by changing the size of the gap 147. The size of the gap 147 can be changed by raising or lowering the adjustable member 50. According to one embodiment, the adjustable member 50 includes a base 51 and a blocking portion 52 formed at the bottom of the base 51. The base 51 is cylindrical. The blocking portion 52 has an inverted cone shape. The top of the base 51 is provided with a slot-shaped opening 53 to facilitate the use of tools such as a screwdriver to rotate the adjustable member 50. Therefore, the adjustable member 50 moves up or down in the through hole 41 of the center cap 40 to adjust the size of the gap 147, thereby The flow rate of the catholyte provided to the center cap 40 is adjusted, and the flow rate of the catholyte provided to the central area of the substrate is adjusted. It can be seen that the flow rate of the catholyte provided to the center cap 40 is independently controlled by the adjustable member 50. The adjustable member 50 may be a fixing screw. In addition, when the flow rate of the catholyte in the catholyte inlet pipe 30 is given, if the flow rate of the catholyte supplied to the center cap 40 is small, the flow rate of the catholyte supplied to the branches 142 of the membrane frame 14 is Big. Conversely, if the flow rate of the catholyte supplied to the center cap 40 is large, the flow rate of the catholyte supplied to the branches 142 of the membrane frame 14 is small. therefore, The flow rate of the catholyte provided to the center cap 40 and the flow rate of the catholyte provided to the branches 142 of the membrane frame 14 can be adjusted.

通過調節間隙的大小,基板中心區域的流量可以被控制。如果間隙較小,基板中心區域的流量就小。反之,如果間隙較大,基板中心區域的流量就大。間隙的大小可以通過旋轉可調構件50來調節。可調構件50每向上或向下旋轉一圈,相對應的,間隙的大小增加或減少1mm。參考圖21所示,通過圖21可以看出,在基板的中心區域,間隙越大,在一個晶片中的鍍柱的平均高度越高,這就意味著鍍柱的高度可以通過調節間隙的大小來控制。在基板的中心區域,間隙越大,相對應的,流量越大,相應的,鍍柱高度就越高,這解決了基板中心區域的電鍍問題。 By adjusting the size of the gap, the flow rate in the central area of the substrate can be controlled. If the gap is small, the flow rate in the center area of the substrate is small. Conversely, if the gap is large, the flow rate in the center area of the substrate is large. The size of the gap can be adjusted by rotating the adjustable member 50. Each time the adjustable member 50 rotates upward or downward, correspondingly, the size of the gap increases or decreases by 1 mm. Referring to Figure 21, it can be seen from Figure 21 that in the central area of the substrate, the larger the gap, the higher the average height of the plated pillars in a wafer, which means that the height of the plated pillars can be adjusted by adjusting the size of the gap. To control. In the center area of the substrate, the larger the gap, the larger the flow rate, and the higher the plating column height, which solves the plating problem in the center area of the substrate.

為了更均勻控制,包括電場的均勻性控制及電解液流量的均勻性控制,本發明的電鍍裝置包括至少一個設有很多小孔的擴散板。在一個實施例中,電鍍裝置包括兩個固定在膜架14頂部的擴散板。請參考圖5,圖6,圖13及圖14。第一擴散板60設有多個孔61。在一個實施例中,第一擴散板60的孔61的大小一致,且分佈在第一擴散板60上的孔61的密度也是均勻的。第一擴散板60的孔61的直徑為0.5mm至5mm。在另一個實施例中,分佈在第一擴散板60的孔61的密度是均勻的,但是孔61的直徑是不同的。分佈在第一擴散板60的中心區域的孔61的直徑大於分佈在第一擴散板60邊緣區域的孔61的直徑,這能夠增強中心區域的電場強度,進而提高基板中心區域的電鍍速率。第一擴散板 60的材料可以是聚氯乙烯,聚丙烯,聚醚醚酮,聚偏氟乙烯,可溶性聚四氟乙烯,特氟龍等。第一擴散板60的厚度為2mm至20mm。第二擴散板70設有多個孔71。在一個實施例中,第二擴散板70的孔71的大小一致,且分佈在第二擴散板70的孔71的密度均勻。第二擴散板70的孔71的直徑為0.5mm至5mm。在另一個實施例中,分佈在第二擴散板70的孔71的密度均勻,但是孔71的直徑可以是不同的。分佈在第二擴散板70中心區域的孔71的直徑大於分佈在第二擴散板70邊緣區域的孔71的直徑,這能夠增強中心區域的電場強度,進而能提高基板中心區域的電鍍速率。第二擴散板70的材料可以是聚氯乙烯,聚丙烯,聚醚醚酮,聚偏氟乙烯,可溶性聚四氟乙烯,特氟龍等。第二擴散板70的厚度為2mm至20mm。第一擴散板60和第二擴散板70可以相同也可以不同。較佳地,分佈在第一擴散板60上的孔61的密度大於分佈在第二擴散板70上的孔71的密度,且第一擴散板60設置在第二擴散板70的上方。由於第二擴散板70靠近膜13和環形陽極113,這能夠控制電場分佈,因此電場的再分佈能夠得以實現以及邊緣效應的問題能夠得以解決。由於基板上的光刻膠以及籽晶層的電阻,基板中心區域的電阻較大,越靠近基板的邊緣則電阻越小。因此,第二擴散板70主要用於調節電路中的電場。分佈在第二擴散板70中心區域的孔71的直徑較大,其大小為4mm。孔71的直徑從第二擴散板70的中心到邊緣逐漸減小。分佈在第二擴散板70邊緣的孔71的直徑為2.5mm。以這種方式,中心的電場將被增強 且邊緣的電場將被減弱,解決了邊緣效應問題。第一擴散板60更靠近基板且主要是為了實現平穩的流動和流體分佈。但是考慮到電場分佈的距離影響,第一擴散板60和第二擴散板70之間的距離不能太大。如果第一擴散板60與第二擴散板70之間的距離太大,第二擴散板70的電場分佈效應明顯減弱。第一擴散板60與第二擴散板70之間的距離在1mm至20mm。 For more uniform control, including the uniformity control of the electric field and the uniformity control of the electrolyte flow, the electroplating device of the present invention includes at least one diffuser plate provided with many small holes. In one embodiment, the electroplating device includes two diffusion plates fixed on the top of the film frame 14. Please refer to Figure 5, Figure 6, Figure 13, and Figure 14. The first diffusion plate 60 is provided with a plurality of holes 61. In one embodiment, the sizes of the holes 61 of the first diffusion plate 60 are the same, and the density of the holes 61 distributed on the first diffusion plate 60 is also uniform. The diameter of the hole 61 of the first diffusion plate 60 is 0.5 mm to 5 mm. In another embodiment, the density of the holes 61 distributed in the first diffusion plate 60 is uniform, but the diameter of the holes 61 is different. The diameter of the holes 61 distributed in the central area of the first diffuser plate 60 is larger than the diameter of the holes 61 distributed in the edge area of the first diffuser plate 60, which can enhance the electric field intensity in the central area, thereby increasing the plating rate in the central area of the substrate. First diffuser The material of 60 can be polyvinyl chloride, polypropylene, polyether ether ketone, polyvinylidene fluoride, soluble polytetrafluoroethylene, Teflon, etc. The thickness of the first diffusion plate 60 is 2 mm to 20 mm. The second diffusion plate 70 is provided with a plurality of holes 71. In one embodiment, the size of the holes 71 of the second diffusion plate 70 is the same, and the density of the holes 71 distributed in the second diffusion plate 70 is uniform. The diameter of the hole 71 of the second diffusion plate 70 is 0.5 mm to 5 mm. In another embodiment, the density of the holes 71 distributed in the second diffusion plate 70 is uniform, but the diameter of the holes 71 may be different. The diameter of the holes 71 distributed in the central area of the second diffuser plate 70 is larger than the diameter of the holes 71 distributed in the edge area of the second diffuser plate 70, which can enhance the electric field intensity in the central area, thereby increasing the plating rate in the central area of the substrate. The material of the second diffusion plate 70 may be polyvinyl chloride, polypropylene, polyether ether ketone, polyvinylidene fluoride, soluble polytetrafluoroethylene, Teflon and the like. The thickness of the second diffusion plate 70 is 2 mm to 20 mm. The first diffuser 60 and the second diffuser 70 may be the same or different. Preferably, the density of the holes 61 distributed on the first diffusion plate 60 is greater than the density of the holes 71 distributed on the second diffusion plate 70, and the first diffusion plate 60 is arranged above the second diffusion plate 70. Since the second diffusion plate 70 is close to the membrane 13 and the annular anode 113, which can control the electric field distribution, the redistribution of the electric field can be realized and the problem of edge effect can be solved. Due to the resistance of the photoresist and the seed layer on the substrate, the resistance in the central area of the substrate is larger, and the closer to the edge of the substrate, the smaller the resistance. Therefore, the second diffuser 70 is mainly used to adjust the electric field in the circuit. The diameter of the holes 71 distributed in the central area of the second diffusion plate 70 is relatively large, and the size is 4 mm. The diameter of the hole 71 gradually decreases from the center to the edge of the second diffusion plate 70. The diameter of the holes 71 distributed on the edge of the second diffusion plate 70 is 2.5 mm. In this way, the electric field in the center will be enhanced And the electric field at the edge will be weakened, solving the problem of edge effect. The first diffuser 60 is closer to the substrate and is mainly for achieving smooth flow and fluid distribution. However, considering the influence of the distance of the electric field distribution, the distance between the first diffusion plate 60 and the second diffusion plate 70 cannot be too large. If the distance between the first diffusion plate 60 and the second diffusion plate 70 is too large, the electric field distribution effect of the second diffusion plate 70 is significantly weakened. The distance between the first diffusion plate 60 and the second diffusion plate 70 is 1 mm to 20 mm.

如圖5和圖6所示,環形的中間板80設置在第一擴散板60與第二擴散板70之間,用於控制基板邊緣區域的鍍柱高度。密封環62設置在第一擴散板60和中間板80之間。另一密封環82設置在中間板80與第二擴散板70之間。又一密封環72設置在第二擴散板70與膜架14的頂部之間。多個定位件90用於固定第一擴散板60,密封環62,中間板80,密封環82,第二擴散板70及密封環72在膜架14的頂部。 As shown in FIG. 5 and FIG. 6, the annular intermediate plate 80 is arranged between the first diffusion plate 60 and the second diffusion plate 70 to control the height of the plating column in the edge area of the substrate. The sealing ring 62 is provided between the first diffusion plate 60 and the intermediate plate 80. The other sealing ring 82 is provided between the intermediate plate 80 and the second diffusion plate 70. Another sealing ring 72 is provided between the second diffusion plate 70 and the top of the film frame 14. The multiple positioning members 90 are used to fix the first diffuser plate 60, the sealing ring 62, the intermediate plate 80, the sealing ring 82, the second diffuser plate 70 and the sealing ring 72 on the top of the film frame 14.

如圖15A所示,較佳地,中間板80的內邊緣設有多個凸部801和多個凹部802,用於提高基板邊緣鍍柱的均勻性。凸部801和凹部802交替排列。中間板80設置在第一擴散板60與第二擴散板70之間。凸部801阻擋分佈在第一擴散板60邊緣的相對應的孔61,用於阻止電解液通過這些孔61。分佈在第一擴散板60邊緣的其他孔61對應著凹部802且未被阻擋,因此電解液能夠通過這些未被中間板80阻擋的孔61。較佳地,分佈在第一擴散板60邊緣的一半的孔61被中間板80的凸部801阻擋,分佈在第一擴散板60邊緣的餘下的一半的孔61未被阻擋。 As shown in FIG. 15A, preferably, the inner edge of the intermediate plate 80 is provided with a plurality of convex portions 801 and a plurality of concave portions 802, which are used to improve the uniformity of the plating pillars at the edge of the substrate. The convex parts 801 and the concave parts 802 are arranged alternately. The intermediate plate 80 is provided between the first diffusion plate 60 and the second diffusion plate 70. The protrusion 801 blocks the corresponding holes 61 distributed on the edge of the first diffusion plate 60 to prevent the electrolyte from passing through the holes 61. The other holes 61 distributed on the edge of the first diffusion plate 60 correspond to the recesses 802 and are not blocked, so the electrolyte can pass through these holes 61 that are not blocked by the intermediate plate 80. Preferably, the holes 61 distributed on one half of the edge of the first diffuser plate 60 are blocked by the convex portion 801 of the middle plate 80, and the holes 61 distributed on the remaining half of the edge of the first diffuser plate 60 are not blocked.

圖15A示意了具有多個凸部801及多個凹部802的中間板80,分佈在第一擴散板60邊緣的一半的孔61被中間板80的凸部801阻擋,分佈在第一擴散板60邊緣的餘下的一半的孔61未被阻擋。圖15B示意了中間板80’,該中間板80’完全不能阻擋分佈在第一擴散板60邊緣的孔61,所以電解液能夠通過分佈在第一擴散板60邊緣的全部孔61。圖15C示意了中間板80”,該中間板80”能夠阻擋分佈在第一擴散板60邊緣的所有孔61,因此電解液不能通過這些孔61。從圖22可以看出,中間板主要影響基板邊緣的鍍膜厚度。在第一擴散板60邊緣的所有孔61都被阻擋的情況下,由於邊緣電力線減少,所以基板邊緣的鍍膜厚度要低於基板其他區域的鍍膜厚度。反之,在第一擴散板60邊緣的所有孔61都未被阻擋的情況下,基板邊緣的鍍膜厚度要高於基板其他區域的鍍膜厚度。在上述兩種情況下,基板邊緣的鍍柱高度不在工藝要求的範圍之內,這將會導致產量的損失。本發明使用包括多個凸部801及多個凹部802的中間板80來選擇性阻擋分佈在第一擴散板60邊緣的部分孔61,使得整個基板上的鍍膜厚度基本均勻且在工藝要求的範圍之內。因此,基板邊緣的鍍膜厚度能被很好的控制。 15A shows the middle plate 80 with a plurality of convex parts 801 and a plurality of concave parts 802. The holes 61 distributed in half of the edge of the first diffuser plate 60 are blocked by the convex parts 801 of the middle plate 80 and are distributed on the first diffuser plate 60 The remaining half of the hole 61 of the edge is not blocked. FIG. 15B shows the intermediate plate 80', which cannot block the holes 61 distributed on the edge of the first diffuser 60 at all, so the electrolyte can pass through all the holes 61 distributed on the edge of the first diffuser 60. 15C illustrates the intermediate plate 80", which can block all the holes 61 distributed on the edge of the first diffusion plate 60, so the electrolyte cannot pass through these holes 61. It can be seen from Figure 22 that the intermediate plate mainly affects the coating thickness at the edge of the substrate. When all the holes 61 on the edge of the first diffusion plate 60 are blocked, the coating thickness on the edge of the substrate is lower than the coating thickness of other areas of the substrate due to the reduction of the edge power lines. On the contrary, when all the holes 61 on the edge of the first diffusion plate 60 are not blocked, the thickness of the coating on the edge of the substrate is higher than that of other areas of the substrate. In the above two cases, the height of the plating column at the edge of the substrate is not within the range required by the process, which will result in a loss of yield. The present invention uses an intermediate plate 80 including a plurality of protrusions 801 and a plurality of recesses 802 to selectively block some of the holes 61 distributed on the edge of the first diffusion plate 60, so that the thickness of the coating on the entire substrate is substantially uniform and within the range of process requirements within. Therefore, the coating thickness on the edge of the substrate can be well controlled.

參考圖4所示,陰極腔12包括內壁121及外壁122。在內壁121與外壁122之間形成凹槽123。在內壁121的頂部設有槽口124。在凹槽123的底部設有陰極電解液出口125。陰極腔12內的電解液通過槽口124流出,並被收集 在凹槽123內,通過陰極電解液出口125排出。基板清洗噴頭126設置在陰極腔12內以用於清洗基板的鍍膜。 Referring to FIG. 4, the cathode cavity 12 includes an inner wall 121 and an outer wall 122. A groove 123 is formed between the inner wall 121 and the outer wall 122. A notch 124 is provided on the top of the inner wall 121. A catholyte outlet 125 is provided at the bottom of the groove 123. The electrolyte in the cathode cavity 12 flows out through the slot 124 and is collected In the groove 123, it is discharged through the catholyte outlet 125. The substrate cleaning nozzle 126 is arranged in the cathode chamber 12 for cleaning the coating film of the substrate.

參考圖2所示,護罩1010固定在陰極腔12的頂部,用於避免在電鍍過程中電解液飛濺。護罩1010包括收集槽1011。排液通道1012與收集槽1011連接。收集槽1011內的液體通過排液通道1012排出。護罩1010的側壁設有清洗液進口1013用於清洗收集槽1011。排氣口1030與陰極腔12連接用於排出氣體。電鍍裝置也能夠包括液位感測器1040用於監測陰極腔12內的液位。 Referring to FIG. 2, a shield 1010 is fixed on the top of the cathode cavity 12 to avoid splashing of electrolyte during the electroplating process. The shield 1010 includes a collection tank 1011. The drainage channel 1012 is connected with the collection tank 1011. The liquid in the collection tank 1011 is discharged through the drain channel 1012. The side wall of the shield 1010 is provided with a cleaning liquid inlet 1013 for cleaning the collection tank 1011. The exhaust port 1030 is connected to the cathode chamber 12 for exhausting gas. The electroplating device can also include a liquid level sensor 1040 for monitoring the liquid level in the cathode cavity 12.

卡盤清洗噴嘴1020位於護罩1010上方,用於噴射清洗液來清洗卡盤100,該卡盤100用於保持基板進行電鍍加工。在清洗卡盤100時,從卡盤清洗噴嘴1020噴出的清洗液收集到護罩1010的收集槽1011內,並通過排液通道1012排出。卡盤100在2015年12月4日所提出的PCT申請號為PCT/CN2015/096402的專利中有詳細描述,這裡全文引用。 The chuck cleaning nozzle 1020 is located above the shield 1010, and is used to spray a cleaning liquid to clean the chuck 100, which is used to hold the substrate for electroplating processing. When the chuck 100 is cleaned, the cleaning liquid sprayed from the chuck cleaning nozzle 1020 is collected in the collecting tank 1011 of the shield 1010 and discharged through the drain channel 1012. The chuck 100 is described in detail in the PCT application number PCT/CN2015/096402 filed on December 4, 2015, and is quoted here in full.

參考圖16至圖19所示,卡盤100包括杯形基部101、位於杯形基部101的頂部用以支撐及電力傳輸的三根立柱120、導電環,該導電環具有多個接觸基板正面邊緣的指形部2011、及密封件,該密封件具有唇形密封部1115用於密封基板正面邊緣,因此在基板浸入電解液進行電鍍時,電解液不能到達基板正面邊緣及基板的背面。卡盤清洗噴嘴1020噴射清洗液以清洗導電環的指形部2011及密封件的唇形密封部1115。基板電鍍完成後,導電環的指形部2011 及密封件的唇形密封部1115上可能有殘餘的鍍液。如果殘留的鍍液未被及時清理乾淨,殘餘的鍍液將會形成結晶。密封件的唇形密封部1115處的結晶將會影響唇形密封部1115與基板正面邊緣之間的密封性,從而導致鍍液接觸到導電環,導致電鍍出現問題。因此,每一片基板電鍍完成後,都有必要清洗導電環的指形部2011及密封件的唇形密封部1115。 16 to 19, the chuck 100 includes a cup-shaped base 101, three pillars 120 located on the top of the cup-shaped base 101 for support and power transmission, a conductive ring, the conductive ring has a plurality of contact with the front edge of the substrate The finger portion 2011 and the seal, the seal has a lip seal 1115 for sealing the front edge of the substrate, so when the substrate is immersed in the electrolyte for electroplating, the electrolyte cannot reach the front edge of the substrate and the back of the substrate. The chuck cleaning nozzle 1020 sprays cleaning liquid to clean the finger portion 2011 of the conductive ring and the lip seal portion 1115 of the seal. After the substrate plating is completed, the finger part of the conductive ring 2011 And there may be residual plating solution on the lip-shaped seal 1115 of the seal. If the remaining plating solution is not cleaned up in time, the remaining plating solution will form crystals. The crystallization at the lip-shaped seal portion 1115 of the seal will affect the sealing performance between the lip-shaped seal portion 1115 and the front edge of the substrate, causing the plating solution to contact the conductive ring, causing problems in electroplating. Therefore, after each substrate is electroplated, it is necessary to clean the finger portion 2011 of the conductive ring and the lip seal portion 1115 of the seal.

然而,由於卡盤100在清洗過程中一直旋轉,因此從卡盤清洗噴嘴1020噴出的清洗液將會打到三根立柱120上,導致清洗液飛濺。為了解決這一問題,一種控制器,包括計時器,用於控制設置在供給管道上的開關閥。該供給管道連接卡盤清洗噴嘴1020,用於向卡盤清洗噴嘴1020提供清洗液。控制器被配置為基於計時器來控制開關閥:在每一根立柱120通過卡盤清洗噴嘴1020期間關閉開關閥,以停止噴射清洗液;在該立柱120通過卡盤清洗噴嘴1020後打開開關閥,以噴射清洗液。例如,卡盤100的旋轉速度為20rpm且卡盤100轉一圈的時間是3秒。卡盤100包括三根立柱120且每根立柱120通過卡盤清洗噴嘴1020的時間為0.1秒。當第一根立柱通過卡盤清洗噴嘴1020時,開關閥關閉0.1秒。然後打開開關閥0.9秒。之後當第二根立柱通過卡盤清洗噴嘴1020時再次關閉開關閥0.1秒。之後再打開開關閥0.9秒。之後當第三根立柱通過卡盤清洗噴嘴1020時再次關閉開關閥0.1秒。重複運用這種方法,避免清洗液擊中立柱120。 However, since the chuck 100 keeps rotating during the cleaning process, the cleaning liquid sprayed from the chuck cleaning nozzle 1020 will hit the three pillars 120, causing the cleaning liquid to splash. In order to solve this problem, a controller includes a timer for controlling an on-off valve provided on the supply pipe. The supply pipe is connected to the chuck cleaning nozzle 1020 and is used to supply the chuck cleaning nozzle 1020 with cleaning liquid. The controller is configured to control the on-off valve based on a timer: close the on-off valve when each column 120 passes through the chuck cleaning nozzle 1020 to stop spraying cleaning liquid; open the on-off valve after the column 120 passes through the chuck cleaning nozzle 1020 , To spray cleaning fluid. For example, the rotation speed of the chuck 100 is 20 rpm and the time for one revolution of the chuck 100 is 3 seconds. The chuck 100 includes three uprights 120 and the time for each upright 120 to pass through the chuck cleaning nozzle 1020 is 0.1 second. When the first column passes through the chuck cleaning nozzle 1020, the on-off valve is closed for 0.1 second. Then open the on-off valve for 0.9 seconds. After that, when the second column passes through the chuck cleaning nozzle 1020, the on-off valve is closed again for 0.1 second. Then open the switch valve for 0.9 seconds. After that, when the third column passes through the chuck cleaning nozzle 1020, the on-off valve is closed again for 0.1 second. Repeat this method to prevent the cleaning fluid from hitting the column 120.

綜上所述,本發明通過上述實施方式及相關圖式說明,己具體、詳實的揭露了相關技術,使本領域的技術人員可以據以實施。而以上所述實施例只是用來說明本發明,而不是用來限制本發明的,本發明的權利範圍,應由本發明的申請專利範圍來界定。至於本文中所述元件數目的改變或等效元件的代替等仍都應屬於本發明的權利範圍。 In summary, the present invention has been described in detail through the above-mentioned embodiments and related drawings, and the related technology has been disclosed in detail, so that those skilled in the art can implement it accordingly. The above-mentioned embodiments are only used to illustrate the present invention, not to limit the present invention. The scope of rights of the present invention should be defined by the scope of the patent application of the present invention. As for the change in the number of elements described herein or the replacement of equivalent elements, all should still belong to the scope of the present invention.

10‧‧‧工藝腔體 10‧‧‧Craft cavity

11‧‧‧陽極腔 11‧‧‧Anode cavity

12‧‧‧陰極腔 12‧‧‧Cathode cavity

13‧‧‧膜 13‧‧‧membrane

14‧‧‧膜架 14‧‧‧Film frame

19‧‧‧第三密封環 19‧‧‧Third sealing ring

20‧‧‧基座 20‧‧‧Base

111‧‧‧陽極區域 111‧‧‧Anode area

112‧‧‧隔牆 112‧‧‧Partition wall

113‧‧‧環形陽極 113‧‧‧Annular anode

116‧‧‧陽極電解液入口 116‧‧‧Anolyte inlet

117‧‧‧陽極電解液出口 117‧‧‧Anolyte outlet

1010‧‧‧護罩 1010‧‧‧Shield

1011‧‧‧收集槽 1011‧‧‧Collection tank

1012‧‧‧排液通道 1012‧‧‧Drain channel

1020‧‧‧卡盤清喜噴嘴 1020‧‧‧Chuck Qingxi Nozzle

Claims (40)

一種在基板上沉積金屬的電鍍裝置,包括:膜架,具有穿過膜架中心的中心通道;陰極電解液進液管,與膜架的中心通道相連接;中心帽,固定在膜架的中心且覆蓋膜架的中心通道,中心帽的頂部設有多個第一孔;其中,陰極電解液進液管通過膜架的中心通道向中心帽供應陰極電解液,陰極電解液通過中心帽的第一孔供應到基板的中心區域。 An electroplating device for depositing metal on a substrate, comprising: a film frame with a central channel passing through the center of the film frame; a catholyte liquid inlet pipe connected with the central channel of the film frame; a center cap fixed at the center of the film frame And covering the central channel of the membrane frame, the top of the central cap is provided with a plurality of first holes; wherein the catholyte inlet pipe supplies catholyte to the central cap through the central channel of the membrane frame, and the catholyte passes through the first hole of the central cap. A hole is supplied to the central area of the substrate. 根據請求項1所述的電鍍裝置,其中,所述供應至中心帽的陰極電極液的流量是可調節和獨立控制。 The electroplating apparatus according to claim 1, wherein the flow rate of the cathodic electrode liquid supplied to the center cap is adjustable and independently controlled. 根據請求項1所述的電鍍裝置,其中,所述中心帽的中心設有通孔,可調構件插入中心帽的通孔內並位於膜架的中心通道的頂端,可調構件被配置為調節提供至中心帽的陰極電解液的流量。 The electroplating device according to claim 1, wherein the center of the center cap is provided with a through hole, the adjustable member is inserted into the through hole of the center cap and is located at the top end of the center channel of the film holder, and the adjustable member is configured to adjust Provides the flow of catholyte to the center cap. 根據請求項3所述的電鍍裝置,其中,所述可調構件包括基體及形成在基體底部的阻塞部。 The electroplating apparatus according to claim 3, wherein the adjustable member includes a base and a blocking part formed at the bottom of the base. 根據請求項4所述的電鍍裝置,其中,所述基體的頂部設有槽形開口便於旋轉可調構件,可調構件在中心帽的通孔內向上或向下移動以調節形成在阻塞部與中 心通道之間的間隙的大小,陰極電解液通過該間隙供應至中心帽。 The electroplating device according to claim 4, wherein the top of the base body is provided with a slot-shaped opening to facilitate the rotation of the adjustable member, and the adjustable member moves up or down in the through hole of the center cap to adjust the blocking portion and in The size of the gap between the heart channels through which the catholyte is supplied to the center cap. 根據請求項3所述的電鍍裝置,其中,所述可調構件是固定螺絲。 The electroplating apparatus according to claim 3, wherein the adjustable member is a fixing screw. 根據請求項1所述的電鍍裝置,其中,所述第一孔的直徑是相同的或第一孔的密度是相同的。 The electroplating apparatus according to claim 1, wherein the diameter of the first holes is the same or the density of the first holes is the same. 根據請求項1所述的電鍍裝置,其中,所述第一孔的直徑是不同的或第一孔的密度是不同的。 The electroplating apparatus according to claim 1, wherein the diameter of the first hole is different or the density of the first hole is different. 根據請求項1所述的電鍍裝置,其中,所述第一孔的直徑從中心帽的中心到邊緣逐漸增大,或第一孔的密度從中心帽的中心到邊緣逐漸增大。 The electroplating apparatus according to claim 1, wherein the diameter of the first hole gradually increases from the center to the edge of the center cap, or the density of the first hole gradually increases from the center to the edge of the center cap. 根據請求項1所述的電鍍裝置,其中,所述中心帽具有側壁,中心帽的側壁上設有多個第二孔,每個第二孔的開口方向是斜向上的。 The electroplating device according to claim 1, wherein the central cap has a side wall, a plurality of second holes are provided on the side wall of the central cap, and the opening direction of each second hole is diagonally upward. 根據請求項1所述的電鍍裝置,其中,所述膜架具有陰極電解液進口,陰極電解液進口與陰極電解液進液管及中心通道連接,膜架設有多個從膜架的中心延伸 到膜架的邊緣的支管,各支管與陰極電解液進口相連接,每個支管設有多個噴射孔。 The electroplating device according to claim 1, wherein the membrane frame has a catholyte inlet, the catholyte inlet is connected with the catholyte inlet pipe and the central channel, and the membrane frame is provided with a plurality of membrane frames extending from the center of the membrane frame The branch pipes to the edge of the membrane frame are connected with the catholyte inlet, and each branch pipe is provided with a plurality of spray holes. 根據請求項11所述的電鍍裝置,其中,所述各支管上的多個噴射孔的直徑或密度是相同的。 The electroplating apparatus according to claim 11, wherein the diameter or density of the plurality of injection holes on each branch pipe is the same. 根據請求項11所述的電鍍裝置,其中,所述各支管上的多個噴射孔的直徑或密度是不同的。 The electroplating apparatus according to claim 11, wherein the diameters or densities of the plurality of injection holes on each branch pipe are different. 根據請求項11所述的電鍍裝置,其中,所述噴射孔的直徑或密度從膜架的中心到邊緣逐漸增大。 The electroplating apparatus according to claim 11, wherein the diameter or density of the injection hole gradually increases from the center to the edge of the film holder. 根據請求項11所述的電鍍裝置,其中,所述每個噴射孔的開口方向相對於垂直平面傾斜。 The electroplating apparatus according to claim 11, wherein the opening direction of each injection hole is inclined with respect to a vertical plane. 根據請求項15所述的電鍍裝置,其中,所述每個支管上的多個噴射孔被分成兩組,這兩組噴射孔的開口方向是相反的。 The electroplating apparatus according to claim 15, wherein the plurality of spray holes on each branch pipe are divided into two groups, and the opening directions of the two groups of spray holes are opposite. 根據請求項1所述的電鍍裝置,進一步包括至少一個設有多個孔的擴散板,該擴散板固定在膜架上。 The electroplating device according to claim 1, further comprising at least one diffuser plate provided with a plurality of holes, and the diffuser plate is fixed on the film frame. 根據請求項17所述的電鍍裝置,其中,所述擴散板上的孔大小一致且分佈在擴散板上的孔密度均勻。 The electroplating device according to claim 17, wherein the size of the holes on the diffusion plate is uniform and the density of holes distributed on the diffusion plate is uniform. 根據請求項17所述的電鍍裝置,其中,所述分佈在擴散板上的孔的密度均勻,但是分佈在擴散板中心區域的孔的直徑大於分佈在擴散板邊緣的孔的直徑。 The electroplating device according to claim 17, wherein the density of the holes distributed on the diffuser plate is uniform, but the diameter of the holes distributed on the central area of the diffuser plate is larger than the diameter of the holes distributed on the edge of the diffuser plate. 根據請求項17所述的電鍍裝置,其中,所述擴散板的數量為兩塊,該兩塊擴散板被分為第一擴散板與第二擴散板,第一擴散板設置在第二擴散板的上方,在兩塊擴散板之間形成一定間距。 The electroplating apparatus according to claim 17, wherein the number of the diffusion plates is two, the two diffusion plates are divided into a first diffusion plate and a second diffusion plate, and the first diffusion plate is arranged on the second diffusion plate Above, a certain distance is formed between the two diffuser plates. 根據請求項20所述的電鍍裝置,其中,所述分佈在第一擴散板上的孔的密度大於分佈在第二擴散板上的孔的密度。 The electroplating apparatus according to claim 20, wherein the density of the holes distributed on the first diffusion plate is greater than the density of the holes distributed on the second diffusion plate. 根據請求項20所述的電鍍裝置,進一步包括設置在兩塊擴散板之間的環形中間板,中間板的內邊緣設有多個凸部與多個凹部。 The electroplating apparatus according to claim 20, further comprising an annular intermediate plate arranged between the two diffuser plates, and the inner edge of the intermediate plate is provided with a plurality of convex parts and a plurality of concave parts. 根據請求項22所述的電鍍裝置,其中,所述凸部與凹部交替排列。 The electroplating apparatus according to claim 22, wherein the convex portions and the concave portions are alternately arranged. 根據請求項22所述的電鍍裝置,其中,所述分佈在第一擴散板的邊緣的一半孔由中間板的凸部阻擋,分佈在第一擴散板的邊緣的另一半孔未被阻擋。 The electroplating device according to claim 22, wherein half of the holes distributed on the edge of the first diffuser plate are blocked by the convex part of the middle plate, and the other half of the holes distributed on the edge of the first diffuser plate are not blocked. 根據請求項1所述的電鍍裝置,其進一步包括陽極腔和陰極腔,陽極腔與陰極腔由固定在膜架上的膜分隔開。 The electroplating device according to claim 1, further comprising an anode cavity and a cathode cavity, and the anode cavity and the cathode cavity are separated by a film fixed on the film frame. 根據請求項25所述的電鍍裝置,其中,所述陽極腔具有側壁,陽極腔的側壁設有多個排放孔,每個排放孔連接一排放通道。 The electroplating device according to claim 25, wherein the anode cavity has a side wall, and the side wall of the anode cavity is provided with a plurality of discharge holes, and each discharge hole is connected to a discharge channel. 根據請求項26所述的電鍍裝置,其中,所述陽極腔被分成多個陽極區域且每兩個相鄰的陽極區域由豎直排列的隔牆分隔,每個陽極區域容納一個環形陽極,每一個陽極區域具有獨立的陽極電解液入口和陽極電解液出口。 The electroplating device according to claim 26, wherein the anode cavity is divided into a plurality of anode regions and every two adjacent anode regions are separated by a partition wall arranged vertically, each anode region contains a ring anode, and An anode area has independent anolyte inlet and anolyte outlet. 根據請求項27所述的電鍍裝置,其中,所述隔牆的頂部和膜之間有一定距離用於氣泡通過,陽極區域內的氣泡由膜收集並引導至排放孔,然後從排放通道排出。 The electroplating device according to claim 27, wherein there is a certain distance between the top of the partition wall and the membrane for air bubbles to pass through, and the air bubbles in the anode region are collected by the membrane and guided to the discharge hole, and then discharged from the discharge channel. 根據請求項28所述的電鍍裝置,進一步包括第三閥門,該第三閥門設置在與陽極電解液入口相連接的陽極電解液進液管上,以及第二閥門,該第二閥門設置在與排放通道相連接的排放管上,其中,陽極電解液通過陽極電解液進液管及陽極電解液入口供應至陽極區域,然後通過排放孔、排放通道及排放管排出。 The electroplating device according to claim 28, further comprising a third valve provided on the anolyte inlet pipe connected to the anolyte inlet, and a second valve provided on the On the discharge pipe connected to the discharge channel, the anolyte is supplied to the anode area through the anolyte inlet pipe and the anolyte inlet, and then discharged through the discharge hole, the discharge channel and the discharge pipe. 根據請求項27所述的電鍍裝置,進一步包括第四閥門,該第四閥門設置在與陽極電解液出口相連接的陽極電解液出液管上,其中,陽極區域中的陽極電解液通過陽極電解液出口及陽極電解液出液管排出。 The electroplating device according to claim 27, further comprising a fourth valve disposed on the anolyte outlet pipe connected to the anolyte outlet, wherein the anolyte in the anode region passes through the anolyte electrolysis The liquid outlet and the anode electrolyte outlet pipe are discharged. 根據請求項28所述的電鍍裝置,進一步包括設置在去離子水進液管上的第一閥門和設置在去離子水出液管上的第五閥門,其中,去離子水進液管連接排放通道,去離子水出液管連接陽極電解液出口,其中,去離子水通過去離子水進液管、排放通道及排放孔供應至陽極腔的陽極區域來沖洗環形陽極,之後通過陽極電解液出口及去離子水出液管排出來。 The electroplating device according to claim 28, further comprising a first valve arranged on the deionized water inlet pipe and a fifth valve arranged on the deionized water outlet pipe, wherein the deionized water inlet pipe is connected to the discharge pipe Channel, the deionized water outlet pipe is connected to the anolyte outlet, wherein the deionized water is supplied to the anode area of the anode cavity through the deionized water inlet pipe, the discharge channel and the discharge hole to flush the annular anode, and then passes through the anolyte outlet And the deionized water outlet pipe is discharged. 根據請求項25所述的電鍍裝置,其中,所述陰極腔包括內壁及外壁,在內壁與外壁之間形成凹槽,在內壁的頂部設有槽口,在凹槽的底部設有陰極電解液出 口,陰極腔內的電解液通過槽口流出,並被收集在凹槽內,通過陰極電解液出口排出。 The electroplating device according to claim 25, wherein the cathode cavity includes an inner wall and an outer wall, a groove is formed between the inner wall and the outer wall, a notch is provided at the top of the inner wall, and a groove is provided at the bottom of the groove. Catholyte out The electrolyte in the cathode cavity flows out through the slot, is collected in the groove, and is discharged through the catholyte outlet. 根據請求項25所述的電鍍裝置,進一步包括基板清洗噴頭,設置在陰極腔內以用於清洗基板的鍍膜。 The electroplating apparatus according to claim 25, further comprising a substrate cleaning nozzle, which is arranged in the cathode cavity for cleaning the plating film of the substrate. 根據請求項25所述的電鍍裝置,進一步包括固定在陰極腔的頂部的護罩。 The electroplating device according to claim 25, further comprising a shield fixed on the top of the cathode chamber. 根據請求項34所述的電鍍裝置,其中,所述護罩包括收集槽,與收集槽相連接的排液通道,收集槽內的液體通過排液通道排出。 The electroplating device according to claim 34, wherein the shield includes a collection tank, and a drain channel connected to the collection tank, and the liquid in the collection tank is discharged through the drain channel. 根據請求項35所述的電鍍裝置,其中,所述護罩的側壁設有清洗液進口,用於清洗收集槽。 The electroplating device according to claim 35, wherein the side wall of the shield is provided with a cleaning liquid inlet for cleaning the collection tank. 根據請求項25所述的電鍍裝置,進一步包括與陰極腔相連接的排氣口,用於排出氣體。 The electroplating device according to claim 25, further comprising an exhaust port connected to the cathode chamber for exhausting gas. 根據請求項34所述的電鍍裝置,進一步包括位於護罩上方的卡盤清洗噴嘴,用於清洗卡盤。 The electroplating device according to claim 34, further comprising a chuck cleaning nozzle located above the shield for cleaning the chuck. 根據請求項38所述的電鍍裝置,其中,所述卡盤包括多根立柱。 The electroplating apparatus according to claim 38, wherein the chuck includes a plurality of uprights. 根據請求項39所述的電鍍裝置,進一步包括具有計時器的控制器,開關閥設置在供給管道上,該供給管道連接卡盤清洗噴嘴,用於向卡盤清洗噴嘴提供清洗液,其中,控制器被配置為基於計時器來控制開關閥:在每一根立柱通過卡盤清洗噴嘴期間關閉開關閥,以停止噴射清洗液;在該立柱通過卡盤清洗噴嘴後打開開關閥,以噴射清洗液。 The electroplating device according to claim 39, further comprising a controller with a timer, and the on-off valve is provided on a supply pipe connected to the chuck cleaning nozzle for supplying cleaning liquid to the chuck cleaning nozzle, wherein the control The device is configured to control the on-off valve based on a timer: close the on-off valve when each column passes through the chuck cleaning nozzle to stop spraying the cleaning liquid; after the column passes the chuck cleaning nozzle, open the on-off valve to spray the cleaning liquid .
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