TW202030834A - Electrostatic chuck and method for manufacturing the same - Google Patents

Abstract

An electrostatic chuck includes a conductive main body, various insulation bushes, and an insulation layer. The conductive main body has at least one channel and various first holes disposed within the conductive main body. Each of the first holes has a first opening located in a surface of the conductive main body, and a second opening connected to the at least one channel. The insulation bushes are correspondingly disposed within the first holes, in which each of the insulation bushes has a second hole, and each of the insulation bushes extends from the first opening of the corresponding first hole toward the second opening of the corresponding first hole. The insulation layer covers the surface of the conductive main body and the insulation bushes.

Description

Electrostatic chuck and its manufacturing method

The embodiment of the disclosure relates to a semiconductor manufacturing process equipment, and more particularly to an electrostatic chuck and a manufacturing method thereof.

In the manufacturing process of semiconductor devices, most of the wafers need to be fixed on the supporting device first, and then the wafers are processed. The supporting device can stably support the wafer during the manufacturing process. The supporting device generally includes a clamping device and an electrostatic chuck. With the rapid growth of the semiconductor integrated circuit (IC) industry, semiconductor components continue to be miniaturized, and therefore, the prevention of contamination that may occur in the manufacturing process is more stringent. Since the clamping device supports the wafer mechanically, it is easier to cause contamination of the wafer during the manufacturing process. Therefore, an electrostatic chuck that uses electrostatic suction to support the wafer has become the mainstream.

According to an embodiment of the disclosure, an electrostatic chuck is provided. The electrostatic chuck includes a conductive body, several insulating sleeves, and an insulating layer. The conductive body has at least one channel and a plurality of first openings are provided in the conductive body, wherein each first opening has a first opening located on a surface of the conductive body The middle and second openings are connected with the above-mentioned at least one channel. The insulating sleeves are correspondingly arranged in the first openings, wherein each insulating sleeve has a second opening, and each insulating sleeve extends from the first opening of the corresponding first opening to the first opening of the corresponding first opening. Two openings extend. The insulating layer covers the surface of the conductive body and the insulating sleeve.

According to another embodiment of the present disclosure, an electrostatic chuck is provided. The electrostatic chuck includes a conductive body, several insulating sleeves, and an insulating layer. The conductive body has at least one channel and a plurality of first openings are provided in the conductive body, wherein the first opening is communicated with the at least one channel. The insulating sleeve is correspondingly arranged in the first opening, so that the outer side of each insulating sleeve is covered by the inner side of the corresponding first opening, wherein one surface of each insulating sleeve is The surface of the conductive body is substantially flush, and each insulating sleeve has a second opening. The insulating layer covers the above-mentioned surface of the conductive body and the above-mentioned surface of the insulating sleeve.

According to another embodiment of the present disclosure, a manufacturing method of an electrostatic chuck is provided. In this method, a conductive body is provided. The conductive body is provided with at least one channel and a plurality of first openings, each of the first openings has a first opening located in the surface of the conductive body, and the second opening is connected to the at least one channel. Correspondingly insert a plurality of insulating sleeves into the above-mentioned first opening, wherein when these insulating sleeves are correspondingly inserted into the above-mentioned first opening, it further includes making each insulating sleeve a first corresponding to the first opening. The opening extends toward the second opening corresponding to the first opening, and each insulating sleeve has a second opening. An insulating layer is formed to cover the above-mentioned surface of the conductive body and the insulating sleeve.

100‧‧‧Electrostatic chuck

110‧‧‧Conductive body

110s‧‧‧surface

112‧‧‧Channel

112a‧‧‧Top surface

114‧‧‧First opening

114a‧‧‧First opening

114b‧‧‧Second opening

114c‧‧‧Inside

120‧‧‧Insulation layer

120a‧‧‧surface

120b‧‧‧surface

122‧‧‧Opening

130‧‧‧Insulating sleeve

130a‧‧‧outer side

130b‧‧‧surface

130c‧‧‧surface

132‧‧‧Second opening

134‧‧‧Insulating column

140‧‧‧Promote sales

150‧‧‧Focusing Ring

152‧‧‧Retaining Wall

160‧‧‧Support

200‧‧‧wafer

202‧‧‧Back

300‧‧‧Operation

310‧‧‧Operation

320‧‧‧Operation

From the following detailed description in conjunction with the accompanying drawings, a better understanding of the aspect of the disclosure can be obtained. It should be noted that, according to industry standard practices, each feature is not drawn to scale. In fact, in order to make the discussion clearer, the size of each feature can be increased or decreased arbitrarily.

[Fig. 1] is a perspective schematic diagram showing a wafer set on an electrostatic chuck according to various embodiments.

[Figure 2] is a schematic top view of an electrostatic chuck according to various embodiments.

[Fig. 3] is a schematic cross-sectional view taken along the line AA of the electrostatic chuck of Fig. 2.

[Fig. 4] is a schematic diagram showing a device in which a wafer is arranged on an electrostatic chuck according to various embodiments.

[FIG. 5A] to [FIG. 5D] show a static state according to various embodiments Schematic diagram of each intermediate stage of the manufacturing method of the electric chuck.

[Figure 6] shows the manufacture of an electrostatic chuck according to various embodiments Flow chart of the method.

The following disclosure provides many different implementations or examples to implement different features of the provided subject matter. The specific embodiments of the components and arrangements described below are used to simplify the disclosure. Of course, these are only examples and are not intended as limitations. For example, in the description, the first feature is formed on or on the second feature, which may include the first feature and the second feature Embodiments formed in direct contact may also include embodiments in which additional features may be formed between the first feature and the second feature, so that the first feature and the second feature may not directly contact.

The terms used here are only used to describe specific implementations, not to limit the scope of the attached patent application. For example, unless specifically limited, the singular term "one" or "the" can also represent the plural form. For example, the terms "first" and "second" are used to describe various elements, regions or layers, etc., although such terms are only used to distinguish one element, a region or layer from another element, another region or another layer. Therefore, without departing from the spirit of the subject matter of protection, the first zone can also be called the second zone, and so on. In addition, the present disclosure may repeat reference numbers and/or words in each embodiment. Such repetition is for the purpose of simplification and clarity, and is not used in itself to specify the relationship between the various embodiments and/or configurations discussed. As used herein, the term "and/or" includes any or all combinations of one or more related listed items.

The embodiment of the present disclosure provides an electrostatic chuck and a method of manufacturing the electrostatic chuck. In some embodiments, each gas opening of the conductive body of the electrostatic chuck is filled with an insulating sleeve with anti-plasma properties. Through the arrangement of these insulating sleeves, the gas openings of the conductive body of the electrostatic chuck can be prevented from being damaged by the arc during the backside cleaning of the wafer supported by the electrostatic chuck, thereby prolonging the service life of the electrostatic chuck.

Please refer to FIGS. 1 to 3, which respectively show a three-dimensional schematic diagram of a wafer disposed on an electrostatic chuck according to each embodiment, a top schematic diagram of an electrostatic chuck according to each embodiment, and an electrostatic chuck along FIG. Suck A schematic cross-sectional view of the disk taken along the AA section line. As shown in FIG. 1, the electrostatic chuck 100 can be used to carry the wafer 200, and the wafer 200 can be adsorbed and fixed in an electrostatic manner. In some embodiments, the wafer 200 may include a semiconductor substrate. The semiconductor substrate may include, for example, a single crystal semiconductor material, a compound semiconductor material, or an alloy semiconductor material. For example, the single crystal semiconductor material can be silicon and germanium. The compound semiconductor material can be, for example, silicon carbide, gallium arsenide, indium arsenide, and indium phosphide. The alloy semiconductor material can be, for example, silicon germanium, silicon germanium carbide, gallium arsenide phosphide, and gallium indium phosphide. In some embodiments, the semiconductor substrate may include an epitaxial layer. For example, the semiconductor substrate may have a bulk semiconductor and an epitaxial layer, wherein the epitaxial layer covers the bulk semiconductor. The semiconductor substrate may also include a silicon on insulator (SOI) structure. For example, the semiconductor substrate may include a buried oxide (BOX) layer, where the buried oxide layer can be fabricated using, for example, oxygen ion implantation silicon isolation (SIMOX) or other suitable technologies, such as wafer bonding technology and polishing technology.

In some embodiments, the semiconductor substrate also includes a number of p-type doped regions and/or n-type doped regions, wherein these p-type doped regions and n-type doped regions can be used, for example, by ion implantation and/or diffusion Process to produce. These doped regions can include n-type wells, p-type wells, lightly doped regions (LDD), heavily doped source and drain (S/D), and several channel doping profiles, where these channel doping profiles Configure to form several integrated circuit elements. These integrated circuit elements can be, for example, complementary metal oxide semiconductor field effect transistors (CMOSFET), image sensors, and/or light emitting diodes (LED). The semiconductor substrate may further include other elements, such as resistors or capacitors formed in or on the substrate. The semiconductor substrate may further include a lateral isolation structure, wherein the lateral isolation structure is configured to isolate the semiconductor Each element in the bulk substrate. In some embodiments, a shallow trench isolation (STI) structure is used to laterally isolate the components in the semiconductor substrate.

In some exemplary examples, the wafer 200 may further include one or more dielectric layers and one or more interconnection layers, wherein the dielectric layers and the interconnection layers are provided on the semiconductor substrate, and the interconnection layers are provided In the dielectric layer. For example, these interconnection layers may include contacts, vias, and wires. The dielectric layer may include silicon oxide, silicon nitride, silicon oxynitride, low-k dielectric materials, or any combination thereof. Low-k dielectric materials can include, for example, fluorosilicate glass (FSG), phosphosilicate glass (PSG), borophosphosilicate glass (BPSG), carbon-doped silicon oxide (SiO _x C _y ), amorphous fluorocarbon, Parylene, bis-benzocyclobutenes (BCB), or any combination thereof. The interconnect layer may include metal or metal alloy, such as copper, copper alloy, aluminum, aluminum alloy, tungsten (W), tungsten alloy, or any combination thereof.

As shown in FIGS. 2 and 3, in some embodiments, the electrostatic chuck 100 includes a conductive body 110, a plurality of insulating sleeves 130, and an insulating layer 120. The conductive body 110 may be composed of metal or metal alloy. For example, the conductive body 110 may be composed of aluminum or aluminum alloy. The conductive body 110 has a surface 110s. The conductive body 110 has a surface 110s that can be an upper surface of the conductive body 110. The wafer 200 can be disposed above the surface 110s of the conductive body 110 and carried by the conductive body 110. The conductive body 110 has one or more channels 112 and a number of first openings 114. The channel 112 is provided inside the conductive body 110. In addition, the channel 112 has a top surface 112a. The channel 112 can be configured to be connected to a cooling gas supply source, wherein the cooling gas supply source can supply cooling gas Body to channel 112. In some exemplary examples, the cooling gas may be an inert gas. For example, the cooling gas may be helium.

Please refer to FIG. 2 and FIG. 3 at the same time, the first openings 114 may be scattered in the conductive body 110. The first openings 114 can be evenly distributed in the conductive body 110, that is, the distance between two adjacent first openings 114 is the same. In some embodiments, the first openings 114 are not uniformly arranged in the conductive body 110. In addition, these first openings 114 are connected to the channel 112 and communicate with each other. Thereby, the cooling gas supplied to the passage 112 by the cooling gas supply source can further flow to the first opening 114. Each first opening 114 extends from the surface 110 s of the conductive body 110 down to the top surface 112 a of the channel 112. Each first opening 114 has a first opening 114a and a second opening 114b. The first opening 114a and the second opening 114b of the first opening 114 can be located at two opposite ends of the first opening 114, respectively. As shown in FIG. 3, the first opening 114 a of each first opening 114 is located in the surface 110 s of the conductive body 110, and the second opening 114 b of each first opening 114 is connected to the channel 112. For example, each of the first openings 114 may extend from the surface 110s of the conductive body 110 in a direction perpendicular to the surface 110s to the top surface 112a of the channel 112, and thus are respectively on the surface 110s of the conductive body 110 and the top surface of the channel 112 A first opening 114a and a second opening 114b are formed in 112a. In other words, the first opening 114 has an inner side 114c, and the inner side 114c of the first opening 114 can extend from the first opening 114a to the second opening 114b in a direction perpendicular to the surface 110s of the conductive body 110.

In some examples, the first openings 114 have the same size. In other examples, the sizes of the first openings 114 are not all the same, that is, the first openings 114 have at least two sizes, and at least part of them The sizes of the first openings 114 are the same as each other. In addition, in some examples, these first openings 114 have the same shape. In other examples, the first openings 114 have at least two shapes, and at least some of the first openings 114 have the same shape. In a specific example, the shapes of the first openings 114 may be different from each other. In some exemplary examples, the first openings 114 are round holes, elliptical holes, triangular holes, square holes, or polygonal holes.

Please refer to FIG. 3 again, the insulating sleeves 130 are respectively correspondingly disposed in the first openings 114 of the conductive body 110. Each insulating sleeve 130 has an outer side surface 130a, and surfaces 130b and 130c, wherein the surfaces 130b and 130c are respectively located on two opposite sides of the insulating sleeve 130, and the outer side surface 130a is interposed between the surfaces 130b and 130c and connects the surfaces 130b and 130c. 130c. The inner side surface 114c of each first opening 114 can circumferentially cover the outer side surface 130a of the corresponding insulating sleeve 130. The insulating sleeve 130 can be fixed in the corresponding first opening 114 by tightly fitting with the corresponding first opening 114. These insulating sleeves 130 can also be adhered and fixed to the inner side 114c of the corresponding first opening 114 by using an adhesive or double-sided tape. Therefore, the adhesive or double-sided tape is interposed between the inner side 114c of the first opening 114 and the insulation. Between the outer side 130a of the sleeve 130. In some examples, each insulating sleeve 130 extends from the first opening 114 a of the corresponding first opening 114 toward the second opening 114 b of the first opening 114. In some exemplary examples, the surface 130 b of each insulating sleeve 130 is flat, and the surface 130 b of the insulating sleeve 130 is substantially flush with the surface 110 s of the conductive body 110. In some examples, each insulating sleeve 130 extends from the first opening 114 a of the corresponding first opening 114 to the second opening 114 b of the corresponding first opening 114. For example, the surface 130c of each insulating sleeve 130 may be The surface 130c of the insulating sleeve 130 is substantially flush with the top surface 112a of the channel 112. When each insulating sleeve 130 extends from the first opening 114a of the corresponding first opening 114 to the second opening 114b of the corresponding first opening 114, the outer side 130a of the insulating sleeve 130 can completely cover the corresponding one The inner side surface 114c of the first opening 114. In some examples, the insulating sleeve 130 may only cover a part of the inner side surface 114 c of the corresponding first opening 114. For example, the insulating sleeve 130 may extend from the first opening 114a of the first opening 114 to the middle part of the first opening 114, so that the insulating sleeve 130 only covers the upper surface 114c of the inner side 114c of the first opening 114. Half.

As shown in FIG. 3, each insulating sleeve 130 has a second opening 132, wherein the second opening 132 extends from the surface 130b of the insulating sleeve 130 to the opposite surface 130c, so the second opening 132 penetrates the insulating sleeve 130. In some exemplary examples, each second opening 132 may extend from the surface 130 b of the insulating sleeve 130 to the other surface 130 c of the insulating sleeve 130 in a direction perpendicular to the surface 130 b. The sizes of the second openings 132 may be the same or not all the same, that is, the second openings 132 have more than two sizes. In some examples, these second openings 132 have the same shape. In other examples, the second openings 132 have at least two shapes, and at least part of the second openings 132 have the same shape. In a specific example, the shapes of the second openings 132 may be different from each other. In some exemplary examples, the second opening 132 is a round hole, an oval hole, a triangular hole, a square hole, or a polygonal hole. The cooling gas supplied by the cooling gas supply source passes through the passage 112 and passes through the second opening 114b of each first opening 114, flows into the second opening 132 of the insulating sleeve 130 in the first opening 114, and then from The second opening 132 is sprayed toward the upper wafer 200 to cool the wafer 200. These insulating sleeves 130 can be made of non-conductive and plasma resistant materials. In some examples, these insulating sleeves 130 comprise ceramic materials. For example, the ceramic material may include alumina (Al ₂ O ₃ ), that is, the insulating sleeve 130 may be an alumina ceramic sleeve.

3 again, the insulating layer 120 covers the surface 110s of the conductive body 110 and the surface 130b of each insulating sleeve 130. The insulating layer 120 has surfaces 120a and 120b, wherein the surfaces 120a and 120b are respectively located on two opposite sides of the insulating layer 120. The insulating layer 120 has many openings 122, and the openings 122 extend from the surface 120 a of the insulating layer 120 a to the surface 120 b and penetrate the insulating layer 120. The openings 122 of the insulating layer 120 are respectively located above the second opening 132 of the insulating sleeve 130 and expose the second opening 132 of the insulating sleeve 130. In some examples, the opening 122 of the insulating layer 120 may be an inverted cone-shaped hole, that is, the radial size of the opening 122 gradually increases from the surface 120b of the insulating layer 120 toward the surface 120a. With the shape design of the opening 122, the cooling gas can be sprayed out of the electrostatic chuck 100 in a divergent manner. In this embodiment, the insulating layer 120 can also be made of a non-conductive and anti-plasma material. For example, the insulating layer 120 may be a coating, such as a yttrium oxide (Y ₂ O ₃ ) coating. In some examples, the material of the insulating layer 120 is different from the material of the insulating sleeve 130. In some specific examples, the material of the insulating layer 120 is the same as the material of the insulating sleeve 130. For example, the material of the insulating layer 120 may also include ceramic materials such as alumina.

Please also refer to FIG. 4, which is a schematic diagram of a device for placing a wafer on an electrostatic chuck according to various embodiments. In some exemplary examples, the electrostatic chuck 100 may further include three or more push pins (pusher pin)140. These push pins 140 can rise and fall relative to the surface 110s of the conductive body 110. In this embodiment, the pushing pins 140 can be arranged in the conductive body 110 in a non-aligned manner. With this arrangement, the pushing pins 140 can define a virtual bearing surface. For example, in an example where the electrostatic chuck 100 includes three pushing pins 140, the three pushing pins 140 are arranged in a triangle shape. With this arrangement, the three pushing pins 140 can define a triangular virtual bearing surface. The pushing pin 140 can lift and support the wafer 200 together stably. In some embodiments, the push pins 140 can be made of non-conductive and plasma resistant materials. For example, the material of the push pins 140 may be ceramic.

When the wafer 200 is to be removed from the electrostatic chuck 100 or the back 202 of the wafer 200 is to be processed, the push pin 140 can be driven to rise to lift the wafer 200. In some examples, referring to FIG. 4 again, a focus ring 150 may be provided on the periphery of the electrostatic chuck 100, wherein the focus ring 150 may surround the conductive body 110 and the insulating layer 120 in a peripheral manner. In some exemplary examples, the focus ring 150 may be adjacent to the insulating layer 120. For example, the material of the focus ring 150 can be silicon. In some exemplary examples, the focus ring 150 may include a retaining wall 152, wherein the retaining wall 152 is higher than the insulating layer 120 of the electrostatic chuck 100, and the retaining wall 152 surrounds the electrostatic chuck 100. With this arrangement, the focus ring 150 can gather process gases, plasma, and/or chemical reactants on the wafer 200 surrounded by the focus ring 150, thereby making the process reaction on the wafer 200 more uniform. In some examples, the support 160 can be used to support the focus ring 150, thereby elevating the focus ring 150. In some demonstrative examples, the support 160 It is composed of insulating materials. For example, the material of the support 160 may be quartz.

In some exemplary examples, please refer to FIG. 4 again. When using plasma to clean the back surface 202 of the wafer 200, the push pin 140 of the electrostatic chuck 100 can be driven first to raise the push pin 140. In this way, the wafer 200 can be lifted so that the back 202 of the wafer 200 is separated from the insulating layer 120 of the electrostatic chuck 100 by a certain distance, and a process is formed between the back 202 of the wafer 200 and the insulating layer 120 of the electrostatic chuck 100 Space to facilitate processing of the back 202 of the wafer 200. Next, plasma is generated. At this time, the plasma can enter the processing space between the back surface 202 of the wafer 200 and the insulating layer 120 to clean the back surface 202 of the wafer 200. During the cleaning process, the plasma can remove contaminants on the back surface 202 of the wafer 200, and these contaminants may affect the process yield of semiconductor devices on the wafer 200. For example, these pollutants can be high molecular polymers or particulates.

During the plasma cleaning process, due to the shadowing of the wafer 200, the plasma density at the edge area of the electrostatic chuck 100 will be relatively high, so the plasma may cause the first opening 114 in the edge area of the electrostatic chuck 100 damage. In the embodiment of the present disclosure, please refer to FIG. 3 again, the outer side 130a of the insulating sleeve 130 of the electrostatic chuck 100 covers the inner side 114c of the corresponding first opening 114, and the material of the insulating sleeve 130 is both It is non-conductive and resistant to plasma. Therefore, during the plasma cleaning process, these insulating sleeves 130 can respectively protect the inner surface 114c of the first opening 114 of the conductive body 110, so that the first openings 114 are not attacked by arcs. It can effectively extend the service life of the electrostatic chuck 100.

Please refer to FIGS. 5A to 5D and FIG. 6 at the same time, in which FIGS. 5A to 5D are schematic diagrams showing the various intermediate stages of an electrostatic chuck manufacturing method according to various embodiments, and FIG. 6 is a schematic diagram showing one according to each embodiment The flow chart of the manufacturing method of the electrostatic chuck, in which FIGS. 5A to 5D are cross-sectional schematic diagrams of the structure in each intermediate stage taken along the cross-sectional line AA in FIG. 2. In some embodiments, the method starts with operation 300, where operation 300 provides a conductive body 110, as shown in FIG. 5A. The conductive body 110 has one or more channels 112 and a number of first openings 114. The channel 112 may be provided inside the conductive body 110 and has a top surface 112a. For example, the channel 112 may be connected to a cooling gas supply source.

Please refer to FIG. 5A again, the first openings 114 are provided in the conductive body 110, and the first openings 114 and the channels 112 are communicated with each other. Each first opening 114 has a first opening 114a and a second opening 114b, and an inner side surface 114c, wherein the first opening 114a and the second opening 114b are located at two opposite ends of the first opening 114, respectively. The first opening 114a of each first opening 114 is scattered in the surface 110s of the conductive body 110, and the second opening 114b is connected to the channel 112. The distance between any adjacent two of the first openings 114 may be the same or different. In other words, the first openings 114 may be uniformly or unevenly arranged in the surface 110s of the conductive body 110. In some examples, each first opening 114 may extend from the surface 110s of the conductive body 110 in a direction perpendicular to the surface 110s to the top surface 112a of the channel 112, thereby forming the first opening 114a on the surface 110s of the conductive body 110, And a second opening 114b is formed on the top surface 112a of the channel 112. In this demonstration example, the first The inner side surface 114c of the opening 114 may extend from the first opening 114a in a direction perpendicular to the surface 110s of the conductive body 110 to the second opening 114b.

The sizes of the first openings 114 may be the same as each other, may be different from each other, or may be partly the same and partly different. In some examples, the first openings 114 have the same shape. In other examples, the first openings 114 have at least two shapes, and at least some of the first openings 114 have the same shape. In a specific example, the shapes of the first openings 114 may be different from each other. For example, the first opening 114 may be a round hole, an elliptical hole, a triangular hole, a square hole, or a polygonal hole.

In some embodiments, as shown in FIG. 5C, operation 310 can then be performed to insert a plurality of insulating sleeves 130 into the first opening 114 of the conductive body 110 respectively. After inserting these insulating sleeves 130 into the first opening 114 of the conductive body 110, each insulating sleeve 130 can go from the first opening 114a of the corresponding first opening 114 to the first opening 114a of the first opening 114. The two openings 114b extend in the direction. The insulating sleeve 130 has an outer side surface 130a, and surfaces 130b and 130c, wherein the surfaces 130b and 130c are opposite to each other, and the two sides of the outer side surface 130a are connected to the surfaces 130b and 130c, respectively. When these insulating sleeves 130 are plugged into the first openings 114 of the conductive body 110, the inner side surface 114c of each first opening 114 can surround the outer side surface 130a of the corresponding insulating sleeve 130. In some examples, when the insulating sleeve 130 is correspondingly inserted into the first opening 114 of the conductive body 110, each insulating sleeve 130 can extend from the first opening 114a of the corresponding first opening 114 to the first opening 114a. A second opening 114b of an opening 114. In such an example, the outer side 130a of the insulating sleeve 130 can completely cover the inner side of the corresponding first opening 114 Side 114c. In some examples, the insulating sleeve 130 may only extend in a part of the corresponding first opening 114. In such an example, the insulating sleeve 130 only covers a part of the inner side surface 114c of the corresponding first opening 114. For example, the insulating sleeve 130 only covers the upper half of the inner side surface 114c of the corresponding first opening 114. In some exemplary examples, the surface 130b of each insulating sleeve 130 is flat, and the surface 130b of the insulating sleeve 130 is substantially flush with the surface 110s of the conductive body 110. In some examples, the surface 130c of each insulating sleeve 130 can also be flat, and the surface 130c of the insulating sleeve 130 is substantially flush with the top surface 112a of the channel 112. Each insulating sleeve 130 has a second opening 132, wherein the second opening 132 extends from the surface 130 b to the surface 130 c of the insulating sleeve 130 and penetrates the insulating sleeve 130. In some exemplary examples, each second opening 132 may extend from the surface 130b of the insulating sleeve 130 in a direction perpendicular to the surface 130b to another surface 130c opposite to the surface 130b. The sizes of the second openings 132 may be the same or not all the same, that is, the second openings 132 have more than two sizes. The shapes of the second openings 132 may be the same as each other, may be different from each other, or some of the same may be different. In some exemplary examples, the second opening 132 of the insulating sleeve 130 is a round hole, an oval hole, a triangular hole, a square hole, or a polygonal hole.

In some embodiments, the insulating sleeve 130 can be tightly fitted with the corresponding first opening 114 to fix the insulating sleeve 130 in the first opening 114. In some alternative embodiments, an adhesive or a double-sided tape may be used to adhere and fix the insulating sleeve 130 to the inner surface 114 c of the corresponding first opening 114. In some exemplary examples, when the insulating sleeve 130 is disposed in the first opening 134 of the conductive body 110, a plurality of insulating posts 134 may be provided first, and The insulating pillars 134 are respectively inserted into the first openings 114, and the insulating pillars 134 can be fixed in the corresponding first openings 114 by, for example, tight fitting or pasting, as shown in FIG. 5B . Next, as shown in FIG. 5C, the insulating pillars 134 can be drilled, so that a second through hole 132 is formed in each insulating pillar 134, and the insulation with the second opening 132 is completed in the first opening 114 Manufacturing and setting of sleeve 130. In this embodiment, the insulating sleeve 130 can be made of a non-conductive and anti-plasma material. In some examples, ceramic materials, such as alumina ceramic materials, can be used to make the insulating sleeve 130.

In some embodiments, as shown in FIG. 5D, operation 320 may be performed next to form an insulating layer 120 covering the surface 110s of the conductive body 110 and the surface 130b of the insulating sleeve 130. So far, the production of the electrostatic chuck 100 has been roughly completed. The insulating layer 120 has surfaces 120a and 120b opposite to each other. The insulating layer 120 has many openings 122, and the openings 122 extend from the surface 120 a of the insulating layer 120 a to the surface 120 b and penetrate the insulating layer 120. In addition, the openings 122 of the insulating layer 120 are respectively located above the second opening 132 of the insulating sleeve 130 and expose the second opening 132 of the insulating sleeve 130. In some examples, the radial size of the opening 122 of the insulating layer 120 may gradually increase from the surface 120b of the insulating layer 120 toward the surface 120a. In some exemplary examples, a coating process combined with a sintering process can be used to form the insulating layer 120. In some examples, the insulating layer 120 may be made of conductive and plasma resistant materials. For example, forming the insulating layer 120 may include coating yttrium oxide on the surface 110s of the conductive body 110 and the surface 130b of the insulating sleeve 130, and sintering the yttrium oxide.

According to an embodiment, the present disclosure discloses an electrostatic chuck. The electrostatic chuck includes a conductive body, several insulating sleeves, and an insulating layer. The conductive body has at least one channel and a plurality of first openings arranged in the conductive body. Each first opening has a first opening located in a surface of the conductive body, and a second opening connected to the at least one channel. The insulating sleeve is correspondingly arranged in the first opening, wherein each insulating sleeve has a second opening, and each insulating sleeve extends from the first opening of the corresponding first opening toward the first opening of the corresponding first opening. Two openings extend. The insulating layer covers the surface of the conductive body and the insulating sleeve.

According to an embodiment, each of the above-mentioned insulating sleeves extends from the first opening of the corresponding first opening to the second opening of the corresponding first opening.

According to one embodiment, the above-mentioned insulating sleeve comprises ceramic material.

According to one embodiment, the aforementioned ceramic material includes alumina.

According to one embodiment, the aforementioned insulating layer is an yttrium oxide coating.

According to an embodiment, the present disclosure discloses an electrostatic chuck. The electrostatic chuck includes a conductive body, several insulating sleeves, and an insulating layer. The conductive body has at least one channel and a plurality of first openings are provided in the conductive body, wherein the first openings are communicated with the at least one channel. The insulating sleeve is correspondingly arranged in the first opening, so that the outer side of each insulating sleeve is covered by the inner side of the corresponding first opening. Wherein, the surface of each insulating sleeve is substantially flush with the surface of the conductive body, and each insulating sleeve has a second opening. The insulating layer covers the surface of the conductive body and the surface of the insulating sleeve.

According to an embodiment, the above-mentioned insulating sleeve is a plurality of alumina ceramic sleeves.

According to an embodiment, the present disclosure discloses a manufacturing method of an electrostatic chuck. In this method, a conductive body is provided, wherein the conductive body is provided with at least one channel and a plurality of first openings, and each first opening has a first opening located in the surface of the conductive body, and a second opening and at least One channel connection. Correspondingly insert a plurality of insulating sleeves into the first opening of the above-mentioned conductive body, wherein when these insulating sleeves are correspondingly inserted into the first opening, it further includes making each insulating sleeve a corresponding first opening. The first opening extends toward the second opening of the first opening, and each insulating sleeve has a second opening. An insulating layer is formed to cover the surface of the conductive body and the insulating sleeve.

According to an embodiment, the above-mentioned correspondingly inserting the insulating sleeve into the first opening includes inserting a plurality of insulating pillars into the first opening correspondingly, and drilling the insulating pillars, so that the first opening An insulating sleeve with a second opening is formed in the hole.

According to an embodiment, when the insulating sleeve is correspondingly inserted into the first opening, the insulating sleeve is made of alumina ceramics. The formation of the insulating layer includes coating yttrium oxide on the surface of the conductive body and the insulating sleeve.

The features of several embodiments have been summarized above, so those familiar with the art can better understand the aspect of the disclosure. Those who are familiar with this technique should understand that they can easily use the present disclosure as a basis to design or retouch other processes and structures to achieve the same purpose and/or the same advantages as the implementation described herein. Those who are familiar with this art should also understand that this kind of equivalent structure does not deviate from the spirit and scope of this disclosure, and those who are familiar with this art can make various changes, substitutions and substitutions here without departing from the spirit and scope of this disclosure. Substitute.

100‧‧‧Electrostatic chuck

110‧‧‧Conductive body

110s‧‧‧surface

112‧‧‧Channel

112a‧‧‧Top surface

114‧‧‧First opening

114a‧‧‧First opening

114b‧‧‧Second opening

114c‧‧‧Inside

120‧‧‧Insulation layer

120a‧‧‧surface

120b‧‧‧surface

122‧‧‧Opening

130‧‧‧Insulating sleeve

130a‧‧‧outer side

130b‧‧‧surface

130c‧‧‧surface

132‧‧‧Second opening

Claims (10)

An electrostatic chuck, comprising: a conductive body having at least one channel and a plurality of first openings provided in the conductive body, wherein each of the first openings has a first opening located in a surface of the conductive body , And a second opening connected to the at least one channel; a plurality of insulating sleeves are correspondingly arranged in the first openings, wherein each of the insulating sleeves has a second opening, and each The insulating sleeve extends from the first opening of the corresponding first opening toward the second opening of the corresponding first opening; and an insulating layer covering the surface of the conductive body and the insulating sleeves. For example, the electrostatic chuck of item 1 of the scope of patent application, wherein each of the insulating sleeves extends from the first opening of the corresponding first opening to the second opening of the corresponding first opening. For example, the electrostatic chuck of item 1 in the scope of patent application, in which the insulating sleeves contain a ceramic material. For example, the electrostatic chuck of item 3 in the scope of patent application, wherein the ceramic material contains alumina. For example, the electrostatic chuck of item 4 in the scope of patent application, wherein the insulating layer is an yttrium oxide coating. An electrostatic chuck, comprising: a conductive body with at least one channel and a plurality of first openings provided in the conductive body, wherein the first openings are connected to the at least one channel; a plurality of insulating sleeves are correspondingly provided In the first openings, so that an outer surface of each of the insulating sleeves is surrounded by an inner surface of the corresponding first opening, wherein one of each of the insulating sleeves The surface is substantially flush with the surface of the conductive body, and each of the insulating sleeves has a second opening; and an insulating layer covering the surface of the conductive body and the surfaces of the insulating sleeves. For example, the electrostatic chuck of item 6 in the scope of patent application, in which the insulating sleeves are a plurality of alumina ceramic sleeves. A method for manufacturing an electrostatic chuck, the method comprising: providing a conductive body, wherein the conductive body is provided with at least one channel and a plurality of first openings, each of the first openings has a first opening located in the conductive body A surface of the main body and a second opening are connected to the at least one channel; a plurality of insulating sleeves are correspondingly inserted into the first openings, and the insulating sleeves are correspondingly inserted into the first openings The hole further includes extending each of the insulating sleeves from the first opening of the corresponding first opening toward the second opening of the corresponding first opening, and each of the insulating sleeves has a The second opening; and An insulating layer is formed to cover the surface of the conductive body and the insulating sleeves. For example, the method according to item 8 of the scope of patent application, wherein the correspondingly inserting the insulating sleeves into the first openings includes: inserting a plurality of insulating posts into the first openings correspondingly; and the insulating The column is subjected to a drilling process to form the insulating sleeves with the second openings in the first openings. For example, the method according to item 8 of the scope of patent application, wherein when the insulating sleeves are correspondingly inserted into the first openings, the insulating sleeves are made of alumina ceramics; and the insulating layer is formed by coating oxidation Yttrium is on the surface of the conductive body and the insulating sleeves.

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