TW202029575A - Electromagnetic device, array thereof, method of making same, antenna subsystem for a steerable array of same - Google Patents
Electromagnetic device, array thereof, method of making same, antenna subsystem for a steerable array of same Download PDFInfo
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本發明概言之係關於一種電磁(electromagnetic;EM)裝置,且具體而言係關於一種具有由一介電材料製成之一三維(three-dimensional;3D)本體之電磁裝置,該電磁裝置因此被建構成在遠場中具有具一寬視場(field of view;FOV)之一電磁輻射場型(radiation pattern)。The present invention generally relates to an electromagnetic (EM) device, and in particular to an electromagnetic device having a three-dimensional (3D) body made of a dielectric material, the electromagnetic device therefore It is constructed to have an electromagnetic radiation pattern with a wide field of view (FOV) in the far field.
在轉讓給申請人之WO 2017/075177 A1中揭露一種具有由一介電材料製成之一三維本體之實例性電磁裝置。In WO 2017/075177 A1 assigned to the applicant, an exemplary electromagnetic device with a three-dimensional body made of a dielectric material is disclosed.
儘管被建構成在遠場中輻射一電磁輻射場型之現有電磁裝置可適合於其預期用途,但一種具有由一介電材料製成之一三維本體且能夠在遠場中產生具有一寬視場之一電磁輻射場型之電磁裝置將會使與電磁裝置有關之技術進步。Although the existing electromagnetic device constructed to radiate an electromagnetic radiation field in the far field may be suitable for its intended use, a three-dimensional body made of a dielectric material and capable of producing a wide view in the far field One of the fields is electromagnetic radiation field type electromagnetic devices that will advance the technology related to electromagnetic devices.
在一實施例中,一種電磁裝置包含:一三維本體,由一介電材料製成,具有一近端及一遠端;該三維本體具有一第一區,該第一區朝向該三維本體之中心、由具有一第一平均介電常數之一介電材料製成,該第一區至少部分地延伸至該三維本體之該遠端;且該三維本體具有在該第一區外側之一第二區,該第二區由具有大於該第一平均介電常數之一第二平均介電常數的除空氣外之一介電材料製成,該第二區自該三維本體之該近端延伸至該遠端。In one embodiment, an electromagnetic device includes: a three-dimensional body, made of a dielectric material, having a proximal end and a distal end; the three-dimensional body has a first area, the first area facing the three-dimensional body The center is made of a dielectric material having a first average dielectric constant, the first region at least partially extends to the distal end of the three-dimensional body; and the three-dimensional body has a first region outside the first region Two regions, the second region is made of a dielectric material other than air having a second average dielectric constant greater than the first average dielectric constant, the second region extends from the proximal end of the three-dimensional body To the far end.
在另一實施例中,一種電磁裝置包含:一三維本體,由一介電材料製成,具有一近端及一遠端;該三維本體具有一第一部分,該第一部分由具有一第一平均介電常數的除空氣外之一介電材料製成,該第一部分自該三維本體之該近端且僅部分地朝向該遠端延伸,該第一部分形成該三維本體之一內部分;該三維本體具有一第二部分,該第二部分由具有小於該第一平均介電常數之一第二平均介電常數的除空氣外之一介電材料製成,該第二部分自該三維本體之該近端延伸至該遠端,該第二部分形成該三維本體包封該內部分之一外部分;該第一部分具有一第一內區,該第一內區具有小於該第一平均介電常數之一第三平均介電常數;且該第二部分具有一第二內區,該第二內區具有小於該第二平均介電常數之一第四平均介電常數,該第二內區係為該第一內區之一延伸部。In another embodiment, an electromagnetic device includes: a three-dimensional body, made of a dielectric material, having a proximal end and a distal end; the three-dimensional body has a first part, the first part is composed of a first average The dielectric constant is made of a dielectric material other than air, the first part extends from the proximal end of the three-dimensional body and only partially toward the distal end, the first part forms an inner part of the three-dimensional body; the three-dimensional body The body has a second part made of a dielectric material other than air having a second average dielectric constant less than the first average dielectric constant, and the second part is derived from the three-dimensional body The proximal end extends to the distal end, the second part forms an outer part of the three-dimensional body encapsulating the inner part; the first part has a first inner zone, and the first inner zone has an average dielectric smaller than the first A third average dielectric constant; and the second portion has a second inner region, the second inner region has a fourth average dielectric constant smaller than the second average dielectric constant, the second inner region Is an extension of the first inner zone.
在另一實施例中,一種電磁裝置包含:一三維本體,由一介電材料製成,具有一近端及一遠端;該三維本體具有一第一區,該第一區由具有一第一平均介電常數之一介電材料製成,該第一區自該三維本體之該遠端且僅部分地朝向該近端延伸;且該三維本體具有在該第一區外側且從屬於該第一區之一第二區,該第二區由具有大於該第一平均介電常數之一第二平均介電常數的除空氣外之一介電材料製成,該第二區自該三維本體之該近端延伸至該遠端。In another embodiment, an electromagnetic device includes: a three-dimensional body, made of a dielectric material, having a proximal end and a distal end; the three-dimensional body has a first region, the first region is formed by having a Made of a dielectric material with an average dielectric constant, the first region extends from the distal end of the three-dimensional body and only partially toward the proximal end; and the three-dimensional body has an outer side of the first region and is subordinate to the The first region is a second region, the second region is made of a dielectric material other than air having a second average dielectric constant greater than the first average dielectric constant, and the second region is formed from the three-dimensional The proximal end of the body extends to the distal end.
在另一實施例中,一種電磁裝置包含:一三維(3D)本體,由一介電材料製成,具有一近端及一遠端;該三維本體具有一第一區,該第一區朝向該三維本體之中心、由具有一第一平均介電常數之一介電材料製成,該第一區自一第一基底結構至少部分地延伸至該三維本體之該遠端,該第一基底結構靠近該三維本體之該近端;該三維本體具有在該第一區外側之一第二區,該第二區由具有大於該第一平均介電常數之一第二平均介電常數的除空氣外之一介電材料製成,該第二區自該三維本體之該近端至少部分地延伸至該三維本體之該遠端;該三維本體具有在該第二區外側之一第三區,該第三區由具有小於該第二平均介電常數之一第三平均介電常數之一介電材料製成,該第三區自一第二基底結構延伸至該三維本體之該遠端,該第二基底結構靠近該三維本體之該近端;且該三維本體具有在該第三區外側之一第四區,該第四區由具有大於該第三平均介電常數之一第四平均介電常數之一介電材料製成,該第四區自該三維本體之該近端延伸至該三維本體之該遠端。In another embodiment, an electromagnetic device includes: a three-dimensional (3D) body, made of a dielectric material, having a proximal end and a distal end; the three-dimensional body has a first region, the first region facing The center of the three-dimensional body is made of a dielectric material having a first average dielectric constant, the first region at least partially extends from a first base structure to the distal end of the three-dimensional body, the first base The structure is close to the proximal end of the three-dimensional body; the three-dimensional body has a second region outside the first region, and the second region is divided by a second average dielectric constant that is greater than the first average dielectric constant Made of a dielectric material outside the air, the second region at least partially extends from the proximal end of the three-dimensional body to the distal end of the three-dimensional body; the three-dimensional body has a third region outside the second region , The third region is made of a dielectric material having a third average dielectric constant less than the second average dielectric constant, and the third region extends from a second base structure to the distal end of the three-dimensional body , The second base structure is close to the proximal end of the three-dimensional body; and the three-dimensional body has a fourth area outside the third area, and the fourth area has a fourth area greater than the third average dielectric constant Made of a dielectric material with an average dielectric constant, the fourth area extends from the proximal end of the three-dimensional body to the distal end of the three-dimensional body.
在另一實施例中,一種電磁裝置包含:一三維(3D)本體,由一介電材料製成,具有一近端及一遠端;該三維本體具有一第一區,該第一區朝向該三維本體之中心、由具有一第一平均介電常數之一介電材料製成,該第一區自一第一基底結構至少部分地延伸至該三維本體之該遠端,該第一基底結構靠近該三維本體之該近端;該三維本體具有在該第一區外側之一第二區,該第二區由具有大於該第一平均介電常數之一第二平均介電常數的除空氣外之一介電材料製成,該第二區自該三維本體之該近端至少部分地延伸至該三維本體之該遠端;該三維本體具有在該第二區外側之一第三區,該第三區由具有小於該第二平均介電常數之一第三平均介電常數之一介電材料製成,該第三區自一第二基底結構延伸至該三維本體之該遠端,該第二基底結構靠近該三維本體之該近端;該三維本體具有在該第三區外側之一第四區,該第四區由具有大於該第三平均介電常數之一第四平均介電常數之一介電材料製成,該第四區自該三維本體之該近端延伸至該三維本體之該遠端;其中該第二基底結構包含設置於該三維本體之該近端處之一相對薄之連接結構,該相對薄之連接結構與該第二區及該第四區一體地形成並橋接於該第二區與該第四區之間,俾使該第二區、該第四區及該相對薄之連接結構彼此一體地形成以形成一單片體(monolithic),該相對薄之連接結構具有一整體高度H5,該整體高度H5小於該三維本體之一整體高度H6之30%;且其中除該相對薄之連接結構之外,該第三區中之該第二基底結構不存在該單片體之介電材料。In another embodiment, an electromagnetic device includes: a three-dimensional (3D) body, made of a dielectric material, having a proximal end and a distal end; the three-dimensional body has a first region, the first region facing The center of the three-dimensional body is made of a dielectric material having a first average dielectric constant, the first region at least partially extends from a first base structure to the distal end of the three-dimensional body, the first base The structure is close to the proximal end of the three-dimensional body; the three-dimensional body has a second region outside the first region, and the second region is divided by a second average dielectric constant that is greater than the first average dielectric constant Made of a dielectric material outside the air, the second region at least partially extends from the proximal end of the three-dimensional body to the distal end of the three-dimensional body; the three-dimensional body has a third region outside the second region , The third region is made of a dielectric material having a third average dielectric constant less than the second average dielectric constant, and the third region extends from a second base structure to the distal end of the three-dimensional body , The second base structure is close to the proximal end of the three-dimensional body; the three-dimensional body has a fourth area outside the third area, and the fourth area has a fourth average dielectric constant greater than the third average dielectric constant Made of a dielectric material with a dielectric constant, the fourth region extends from the proximal end of the three-dimensional body to the distal end of the three-dimensional body; wherein the second base structure includes the proximal end of the three-dimensional body A relatively thin connecting structure formed integrally with the second area and the fourth area and bridged between the second area and the fourth area, so that the second area, the The fourth area and the relatively thin connection structure are integrally formed with each other to form a monolithic body. The relatively thin connection structure has an overall height H5, which is smaller than an overall height H6 of the three-
在另一實施例中,一種電磁裝置包含:一基底基板,具有第一複數個通路(via);一三維(3D)本體,由一介電材料製成,該介電材料由除空氣外之一介質構成,該三維本體具有一近端及一遠端,該三維本體之該近端在該基底基板上設置成使得該三維本體至少部分地或完全覆蓋該第一複數個通路;其中該第一複數個通路至少部分地填充有該三維本體之該介電材料,俾使該三維本體及該第一複數個通路之該介電材料形成一單片體。In another embodiment, an electromagnetic device includes: a base substrate with a first plurality of vias; a three-dimensional (3D) body made of a dielectric material, the dielectric material is made of other than air A medium, the three-dimensional body has a proximal end and a distal end, the proximal end of the three-dimensional body is arranged on the base substrate such that the three-dimensional body at least partially or completely covers the first plurality of passages; wherein A plurality of vias are at least partially filled with the dielectric material of the three-dimensional body, so that the three-dimensional body and the dielectric material of the first plurality of vias form a monolithic body.
在另一實施例中,一種用於一由電磁裝置形成之可轉向陣列(steerable array)之天線子系統包含:複數個該電磁裝置,該等電磁裝置其中之每一電磁裝置具有排列於一表面上之一寬視場(FOV)介電共振天線(dielectric resonator antenna;DRA);一子系統板,對於該等電磁裝置其中之每一電磁裝置,具有一訊號饋源結構;該等電磁裝置貼附至該子系統板。In another embodiment, an antenna subsystem for a steerable array formed by electromagnetic devices includes: a plurality of the electromagnetic devices, each of the electromagnetic devices has a surface arranged on a surface The above one is a wide field of view (FOV) dielectric resonator antenna (DRA); a subsystem board, for each of the electromagnetic devices, has a signal feed structure; the electromagnetic device stickers Attach to the subsystem board.
在另一實施例中,一種用於一由電磁裝置形成之可轉向陣列之天線子系統包含:複數個該電磁裝置,該等電磁裝置其中之每一電磁裝置具有排列於一表面上之一寬視場介電共振天線(DRA),該等電磁裝置其中之每一電磁裝置更具有一基底基板,各該基底基板具有設置成與該等介電共振天線其中之一對應介電共振天線進行電磁訊號通訊之一訊號饋源結構;其中各該電磁裝置之該基底基板係為該等基底基板其中之一相鄰基底基板之一連續延伸部以形成一總體基底基板,該等介電共振天線貼附至該總體基底基板;其中該總體基底基板包含在數目上與該等介電共振天線之數目相等之複數個輸入埠,各該輸入埠電性連接至該等訊號饋源結構其中之一對應訊號饋源結構,該對應訊號饋源結構與該等介電共振天線其中之一對應介電共振天線進行訊號通訊;該天線子系統提供適合於將該等電磁裝置排列成能夠由多個該天線子系統形成之任何排列大小之一結構。In another embodiment, an antenna subsystem for a steerable array formed by electromagnetic devices includes: a plurality of the electromagnetic devices, each of the electromagnetic devices having a width arranged on a surface Field of View Dielectric Resonant Antennas (DRA). Each of the electromagnetic devices has a base substrate. Each base substrate has a dielectric resonant antenna arranged to correspond to one of the dielectric resonant antennas. A signal feed structure for signal communication; wherein the base substrate of each electromagnetic device is a continuous extension of one of the base substrates adjacent to the base substrate to form an overall base substrate, and the dielectric resonant antennas are attached Attached to the overall base substrate; wherein the overall base substrate includes a plurality of input ports equal in number to the number of the dielectric resonant antennas, and each input port is electrically connected to one of the signal feed structures corresponding to A signal feed structure, the corresponding signal feed structure performs signal communication with one of the dielectric resonant antennas corresponding to the dielectric resonant antenna; the antenna subsystem is suitable for arranging the electromagnetic devices so that a plurality of the antennas A structure of any arrangement size formed by the subsystem.
結合附圖閱讀以下對本發明之詳細說明,會容易地明瞭本發明之以上特徵及優點以及其他特徵及優點。Reading the following detailed description of the present invention in conjunction with the accompanying drawings will easily understand the above features and advantages and other features and advantages of the present invention.
儘管為了便於例示,以下詳細說明包含諸多細節,但此項技術中任何具有通常知識者應瞭解,在隨附申請專利範圍之範圍內存在對以下細節之諸多變化及更改。因此,以下實例性實施例係在不失本文中所揭露之所主張發明之任何一般性且不對所主張發明強加限制之情況下陳述。Although the following detailed description contains many details for the sake of illustration, anyone with ordinary knowledge in this technology should understand that there are many changes and modifications to the following details within the scope of the attached patent application. Therefore, the following exemplary embodiments are stated without losing any generality of the claimed invention disclosed herein and without imposing limitations on the claimed invention.
在各圖中提供本文中所使用之一組正交x-y-z軸來闡述本發明實施例之平面圖(即x-y軸之平面中之一視圖)及立面圖(即x-z軸或y-z軸之平面中之一視圖)。In each figure, a set of orthogonal xyz axes used in this article is provided to illustrate the plan view (that is, the view in the plane of the xy axis) and the elevation view (that is, the view in the plane of the xz axis or the yz axis) of the embodiment of the present invention. One view).
藉由各圖及附文所示及所述之一實施例提供一種電磁裝置及一種電磁裝置陣列,該電磁裝置及該電磁裝置陣列具有被建構及結構化成在遠場中提供具有一寬視場之一電磁輻射場型之一介電共振天線。在一實施例中,該介電共振天線被建構成使得一中心區具有較該介電共振天線之一周圍外區低之一平均介電常數(Dk),其中較低平均Dk中心區至少部分地延伸至介電共振天線之遠端。在一實施例中,電磁裝置陣列被建構為用於提供一電磁裝置可轉向陣列之一天線子系統,該電磁裝置可轉向陣列可藉由一電磁波束轉向子系統轉向。儘管本文中所例示及闡述之實施例繪示具有一特定剖面輪廓(x-y、x-z或y-z)之介電共振天線,然而應瞭解,可對此等輪廓進行修改,此並不背離本發明之範圍。因此,會設想出歸屬於本文揭露內容之範圍內且適合於本文中所揭露之一用途之任何輪廓,且該等輪廓被視為對本文中所揭露之實施例之補充。An electromagnetic device and an electromagnetic device array are provided by one of the embodiments shown and described in the figures and the accompanying text. The electromagnetic device and the electromagnetic device array are constructed and structured to provide a wide field of view in the far field. An electromagnetic radiation field type and a dielectric resonant antenna. In one embodiment, the dielectric resonant antenna is constructed such that a central area has an average dielectric constant (Dk) lower than that of a surrounding outer area of the dielectric resonant antenna, wherein the lower average Dk central area is at least partially The ground extends to the far end of the dielectric resonant antenna. In one embodiment, the electromagnetic device array is configured to provide an antenna subsystem of an electromagnetic device steerable array that can be steered by an electromagnetic beam steering subsystem. Although the embodiments illustrated and described herein show a dielectric resonant antenna with a specific cross-sectional profile (xy, xz, or yz), it should be understood that these profiles can be modified without departing from the scope of the present invention . Therefore, any contours that fall within the scope of the content disclosed herein and are suitable for one of the purposes disclosed herein are conceived, and these contours are regarded as supplements to the embodiments disclosed herein.
共同地特別參照第1A圖、第1B圖及第1C圖對一實例性電磁裝置1100進行以下說明。第1A圖、第1B圖及第1C圖中所繪示之成組正交x-y-z軸1101是出於例示目的,且建立電磁裝置1100之各種特徵相對於彼此之三維(3D)排列。An example
在一實施例中,實例性電磁裝置1100包含:一三維本體1102,由一介電材料製成,具有一近端1104及一遠端1106;三維本體1102具有一第一區1108,第一區1108當在電磁裝置1100之一平面圖中觀察時係朝向三維本體1102之中心1110(參見第1C圖)設置、由具有一第一平均介電常數(Dk1-1100)之一介電材料製成,第一區1108至少部分地延伸至三維本體1102之遠端1106且在一實施例中完全延伸至三維本體1102之遠端1106;且三維本體1102具有一第二區1112,第二區1112當在電磁裝置1100之一平面圖中觀察時係設置於第一區1108之徑向外側、由具有大於第一平均介電常數之一第二平均介電常數(Dk2-1100)的包含除空氣外之一介電介質之一介電材料製成,該介電材料亦可包含空氣,例如一介電發泡體,當在電磁裝置1100之一立面圖中觀察時(例如參見第1B圖),第二區1112自三維本體1102之近端1104延伸至遠端1106。軸線1101(第1B圖及第1C圖中所繪示)可平移成使得z軸與三維本體1102之中心1110對齊,且x-y平面與三維本體1102之近端1104重合(參見第1B圖及第1C圖)以建立電磁裝置1100之一局部座標系。如下文中所使用,所提及之x-y-z座標系1101指代為電磁裝置1100建立局部座標系之前述經平移座標系。In one embodiment, the exemplary
在一實施例中,第一區1108相對於軸線1101其中之z軸而居中設置於三維本體1102內。在一實施例中,第一區1108包含空氣,其可完全由空氣構成或者可由空氣及除空氣外之另一介電介質構成。在一實施例中,第一區1108包含呈一發泡體之形式之一介電介質。在一實施例中,第一區1108之Dk1-1100具有等於或大於1(包含空氣)且等於或小於8或更具體而言等於或大於1且等於或小於5之一相對低之介電常數。在一實施例中,第一區1108相對於第二區1112係為三維本體1102中之一凹部(depression),該凹部自遠端1106朝向近端1104延伸。在一實施例中,可藉由移除第二區1112之材料、藉由在形成第二區1112期間使用一可移除嵌件(insert)或者藉由適合於本文中所揭露之一用途之任何其他手段來形成第一區1108之凹部。在一實施例中,凹部延伸達介於自三維本體1102之遠端1106至近端1104之距離之約30%與約100%間之任何量。如上文中所提及,第一區1108之凹部之Dk1-1100係為較第二區1112之Dk2-1100相對低之一介電常數。In an embodiment, the
在一實施例中,三維本體1102更包含一第三區1114,第三區1114當在電磁裝置1100之平面圖中觀察時設置於第二區1112之徑向外側、由具有小於第二平均介電常數之一第三平均介電常數(Dk3-1100)之一介電材料製成,當在電磁裝置1100之立面圖中觀察時,第三區1114自三維本體1102之近端1104延伸至遠端1106。在一實施例中,第三區1114包含以下材料之一組合:具有第二平均介電常數之一介電材料(例如參見下文中所述之突出部(projection)1118)、及不同於具有第二平均介電常數之介電材料之另一介電材料1116。在一實施例中,第三區1114之該另一介電材料1116包含空氣,其可完全由空氣構成或者可由空氣及除空氣外之另一介電介質構成。在一實施例中,第三區1114之該另一介電材料1116包含呈一發泡體之形式之一介電介質。在一實施例中,第三區1114之介電材料組合形成介電常數較第二區1112之介電常數相對低之一介電區。在一實施例中,第三區1114包含相對於軸線1101其中之z軸自第二區1112徑向向外延伸且與第二區1112成一體及單片式之複數個突出部1118。在一實施例中,當在電磁裝置1100之平面圖中觀察時以及當在一x-y平面剖面中觀察時,突出部1118其中之每一者具有一剖面整體長度L1及一剖面整體寬度W1,其中L1及W1各自小於λ,其中λ係為當電磁裝置1100受到電磁激發時電磁裝置1100之一操作波長。在一實施例中,L1及W1各自小於λ/4。在一實施例中,當在一平面圖或一x-y平面剖面中觀察時,突出部1118其中之每一者具有自寬至窄徑向向外呈錐形之一剖面形狀。In one embodiment, the three-
在一實施例中,電磁裝置1100更包含:一第四區1120,由具有一第四平均介電常數(Dk4-1100)的除空氣外之一介電材料製成;其中當在電磁裝置1100之平面圖中觀察時,第四區1120實質上環繞三維本體1102之近端1104,且其中第四平均介電常數不同於第三平均介電常數。在一實施例中,當在電磁裝置1100之立面圖中觀察時,第四區1120相對於三維本體1102之近端1104具有一高度H4,高度H4小於第二區1112之高度H2。在一實施例中,當在電磁裝置1100之平面圖中觀察時,第四區1120在三維本體1102之近端1104處實質上環繞第三區1114。In one embodiment, the
在一實施例中,第三區1114包含以下材料之一組合:具有第四平均介電常數之一介電材料(例如參見下文中所述之突出部1122)、及介電常數不同於第四介電常數之另一介電材料。在一實施例中,第三區1114包含自第四區1120向外延伸且與第四區1120成一體及單片式之複數個突出部1122。如第1C圖中所繪示,突出部1122自第四區1120向外並遠離第四區1120延伸,且亦朝向三維本體1102之中心1110徑向向內延伸。In one embodiment, the
在一實施例中,當在電磁裝置1100之平面圖中觀察時以及當在一x-y平面剖面中觀察時,與第四區1120成單片式之突出部1122其中之每一者具有一剖面整體長度L2及一剖面整體寬度W2,其中L2及W2各自小於λ,其中λ係為當電磁裝置1100受到電磁激發時電磁裝置1100之一操作波長。在一實施例中,L2及W2各自小於λ/4。在一實施例中,當在一平面圖或一x-y平面剖面中觀察時,與第四區1120成單片式之突出部1122其中之每一者具有相對於第四區1120自寬至窄向外呈錐形之一剖面形狀。In one embodiment, when viewed in a plan view of the
在一實施例中,如在第1B圖中藉由虛線1103所觀察,第四區1120與第二區1112成一體及單片式,且第四平均介電常數等於第二平均介電常數。In one embodiment, as viewed by the dashed
在一實施例中,當在電磁裝置1100之平面圖中觀察時,第三區1114包含在第二區1112與第四區1120之間跨越第三區1114延伸之複數個橋區段(bridge section)1124,橋區段1124與第二區1112及第四區1120成一體及單片式。在一實施例中,橋區段1124具有高度H4。在一實施例中,當在電磁裝置1100之平面圖中觀察時以及當在一x-y平面剖面中觀察時,橋區段1124其中之每一者具有一剖面整體長度L3及一剖面整體寬度W3,其中L3及W3各自小於λ,其中λ係為當電磁裝置1100受到電磁激發時電磁裝置1100之一操作波長。在一實施例中,L3及W3各自小於λ/4。In one embodiment, when viewed in a plan view of the
在一實施例中,三維本體1102之第二區1112具有具複數個紋理特徵(通常由參考編號1118表示)之一紋理化外表面,該等紋理特徵在任何方向上皆具有小於λ之整體尺寸,其中λ係為當電磁裝置1100受到電磁激發時電磁裝置1100之一操作波長。In one embodiment, the
在一實施例中,三維本體1102之至少第二區1112之所有暴露內表面之至少一部分自三維本體1102之近端1104至遠端1106向內傾斜(draft),如在第1B圖中藉由錐形(傾斜)線1105所繪示。In one embodiment, at least a portion of all exposed inner surfaces of at least the
在一實施例中,電磁裝置1100更包含:一基底基板1200,具有一訊號饋源1202,訊號饋源1202用以將三維本體1102電磁激發成向遠場中輻射一電磁場;其中三維本體1102之近端1104在基底基板1200上相對於訊號饋源1202設置成使得當訊號饋源1202上存在一特定電性訊號時,三維本體1102在中心處受到電磁激發。In one embodiment, the
在一實施例中,當在電磁裝置1100之一平面圖中觀察時,第四區1120之介電材料係為環繞一腔1107之一介電材料,第一區1108、第二區1112及第三區1114之介電材料之至少一部分設置於腔1107中。如上文中所提及,第四區1120之介電材料具有Dk4-1100,在一實施例中,Dk4-1100可係為一相對高之介電常數(例如大於8)或一相對低之介電常數(例如大於1且等於或小於8或者更具體而言大於1且等於或小於5)。在一實施例中,Dk4-1100等於或大於10且等於或小於20。In one embodiment, when viewed in a plan view of the
如上文中所提及,第三區1114之部分(例如突出部1118)與第二區1112成一體及單片式,第二區1112之部分(例如參見虛線1103)與第四區1120成一體及單片式,及/或第三區1114之部分(例如突出部1122)與第四區1120成一體及單片式。依據上述內容得出,一實施例包含一電磁裝置1100,其中第二區1112之至少部分及第三區1114之部分與第四區1120成一體及單片式,在一實施例中,第四區1120具有等於或大於8或者更具體而言等於或大於10且等於或小於20之Dk4-1100。As mentioned above, the part of the third zone 1114 (for example, the protrusion 1118) is integrated and monolithic with the
特別參照第2圖對一實例性電磁裝置2100進行以下說明。第2圖中所繪示之成組正交x-y-z軸2101是出於例示目的,且建立電磁裝置2100之各種特徵相對於彼此之三維排列。An example
在一實施例中,實例性電磁裝置2100包含:一三維本體2102,由一介電材料製成,具有一近端2104及一遠端2106;三維本體2102具有一第一部分2130,第一部分2130由具有一第一平均介電常數(Dk1-2100)的除空氣外之一介電材料製成,第一部分2130自三維本體2102之近端2104且僅部分地朝向遠端2106延伸,第一部分2130形成三維本體2102之一內部分;三維本體2102具有一第二部分2140,第二部分2140由具有小於第一平均介電常數之一第二平均介電常數(Dk2-2100)的除空氣外之一介電材料製成,第二部分自三維本體2102之近端2104延伸至遠端2106,第二部分2140形成三維本體2102的包封內部分2130之一外部分;第一部分2130具有一第一內區2132,第一內區2132具有小於第一平均介電常數之一第三平均介電常數(Dk3-2100);且第二部分2140具有一第二內區2142,第二內區2142具有小於第二平均介電常數之一第四平均介電常數(Dk4-2100)。在一實施例中,第二內區2142係為第一內區2132之一連續延伸部。In one embodiment, the exemplary
在一實施例中,三維本體2102關於z軸對稱,其中第一部分2130相對於第二部分2140之一外表面設置於徑向內側,第一內區2132相對於第一部分2130之一外表面設置於徑向內側,且第二內區2142相對於第二部分2140之一外表面設置於徑向內側。In one embodiment, the three-
在一實施例中,第一部分2130具有一截頭圓錐形表面2134,截頭圓錐形表面2134靠近且界定在第一部分2130之外表面內側之第一內區2132。在一實施例中,截頭圓錐形表面2134自第一部分2130之一遠端處之一直徑D4漸縮至第一部分之一近端(三維本體2102之近端2104)處之一直徑D3。在一實施例中,第二部分2140具有一截頭圓錐形表面2144,截頭圓錐形表面2144靠近且界定在第二部分2140之外表面內側之第二內區2142。在一實施例中,截頭圓錐形表面2144自第二部分2140之一遠端(三維本體2102之遠端)處之一直徑D2漸縮至直徑D4。在一實施例中,第一內區2132與第二內區2142相連,且第三平均介電常數等於第四平均介電常數。In one embodiment, the
在一實施例中,第一內區2132及第二內區2142各自包含空氣,其可完全由空氣構成或者可由空氣及除空氣外之另一介電介質構成。在一實施例中,第一內區2132及第二內區2142包含呈一發泡體之形式之一介電介質。在一實施例中,第一內區2132及第二內區2142至少其中之一包含除空氣外之一介電材料。In an embodiment, the first
在一實施例中,第三平均介電常數及第四平均介電常數皆小於第一平均介電常數及第二平均介電常數其中之每一者。在一實施例中,第四平均介電常數小於第三平均介電常數。In one embodiment, the third average dielectric constant and the fourth average dielectric constant are both smaller than each of the first average dielectric constant and the second average dielectric constant. In one embodiment, the fourth average dielectric constant is less than the third average dielectric constant.
在一實施例中,第一部分2130具有一整體高度H1;第二部分2140具有一整體高度H2;且H1小於H2之約70%。在一實施例中,H1係為H2之約50%。In one embodiment, the
在一實施例中,當在一平面圖或一x-y平面剖面中觀察時,第一部分2130及第二部分2140各自具有為圓形之一外剖面形狀。在一實施例中,當在一平面圖或一x-y平面剖面中觀察時,第一部分2130及第二部分2140各自具有為圓形之一內剖面形狀。In one embodiment, when viewed in a plan view or an x-y plane cross-section, the
在一實施例中,第一內區2132及第二內區2142各自相對於軸線2101其中之中心z軸而居中設置。In one embodiment, the first
在一實施例中,當在一平面圖或一x-y平面剖面中觀察時,第一部分2130具有一整體外剖面尺寸D1;當在一平面圖或一x-y平面剖面中觀察時,第二部分2140具有一整體外剖面尺寸D2;且D1小於D2。在一實施例中,D1小於D2之約70%。在一實施例中,D1係為D2之約60%。在一實施例中,D3小於D1、D2及D4,且D4小於D1及D2。In one embodiment, when viewed in a plan view or an xy plane cross-section, the
在一實施例中:第一平均介電常數Dk1-2100等於或大於10或者更具體而言等於或大於10且等於或小於20;第二平均介電常數Dk2-2100等於或大於4且小於10或者更具體而言等於或大於4且等於或小於9;並且第三平均介電常數Dk3-2100及第四平均介電常數Dk4-2100各自具有等於或大於1(包含空氣)且小於4或者更具體而言等於或大於1且等於或小於3的一相對較低之介電常數。依據上述內容,通常將瞭解,三維本體2102之各種部分及區之介電常數係使得Dk3-2100及Dk4-2100相對低於Dk2-2100,且Dk2-2100相對低於Dk1-2100。在一實施例中,第一內區2132及第二內區2142呈一凹部之形式,該凹部係藉由移除第一部分2130及第二部分2140之材料、藉由在形成第一部分2130及第二部分2140期間使用一可移除嵌件或者藉由適合於本文中所揭露之一用途之任何其他手段而形成。In an embodiment: the first average dielectric constant Dk1-2100 is equal to or greater than 10, or more specifically, equal to or greater than 10 and equal to or less than 20; the second average dielectric constant Dk2-2100 is equal to or greater than 4 and less than 10 Or more specifically equal to or greater than 4 and equal to or less than 9; and the third average dielectric constant Dk3-2100 and the fourth average dielectric constant Dk4-2100 each have equal to or greater than 1 (including air) and less than 4 or more Specifically, a relatively low dielectric constant equal to or greater than 1 and equal to or less than 3. Based on the foregoing, it will generally be understood that the dielectric constants of various parts and regions of the three-
在一實施例中,三維本體2102之所有暴露內表面之至少一部分自三維本體2102之近端2104至遠端2106向內傾斜,如藉由截頭圓錐形表面2144、2134大體所繪示。In one embodiment, at least a portion of all exposed inner surfaces of the three-
在一實施例中,電磁裝置2100更包含:一基底基板2200,具有一訊號饋源2202,訊號饋源2202用以將三維本體2102電磁激發成向遠場中輻射一電磁場;其中三維本體2102在基底基板2200上相對於訊號饋源2202設置成使得當訊號饋源2202上存在一特定電性訊號時,三維本體2102在中心處受到電磁激發。In one embodiment, the
結合第1A圖至第1C圖共同地特別參照第3A圖及第3B圖對一實例性電磁裝置3100進行以下說明。第3A圖及第3B圖中所繪示之成組正交x-y-z軸3101是出於例示目的,且建立電磁裝置3100之各種特徵相對於彼此之三維排列。An example
在一實施例中,實例性電磁裝置3100包含與電磁裝置1100相當之一結構,其中:第一區1108、3130自三維本體1102、3102之遠端1106、3106且僅部分地朝向近端1104、3104延伸;且第二區1112、3140從屬於第一區1108、3130。In one embodiment, the exemplary
在另一實施例中,實例性電磁裝置3100包含:一三維本體3102,由一介電材料製成,具有一近端3104及一遠端3106;三維本體3102具有一第一區3130,第一區3130由具有一第一平均介電常數(Dk1-3100)之一介電材料製成,第一區3130自三維本體3102之遠端3106且僅部分地朝向近端3104延伸;且三維本體3102具有一第二區3140,當在電磁裝置3100之一立面圖中觀察時,第二區3140設置於第一區3130之徑向外側且從屬於第一區3130,第二區3140由具有大於第一平均介電常數之一第二平均介電常數(Dk2-3100)的除空氣外之一介電材料製成,第二區3140至少在第二區3140之一外周邊處自三維本體3102之近端3104延伸至遠端3106。In another embodiment, the exemplary
在一實施例中,第一區3130之介電材料包含空氣,其可完全由空氣構成或者可由空氣及除空氣外之另一介電介質構成。在一實施例中,第一區3130包含呈一發泡體之形式之一介電介質。在一實施例中,第一區3130之介電材料包含除空氣外之一介電材料。In an embodiment, the dielectric material of the
在一實施例中,第一區3130係為形成於第二區3140中之一凹部。在一實施例中,可藉由移除第二區3140之材料、藉由在形成第二區3140期間使用一可移除嵌件或者藉由適合於本文中所揭露之一用途之任何其他手段來形成第一區3130之凹部。在一實施例中,凹部延伸達介於自三維本體3102之遠端3106至近端3104之距離之約30%與約95%間之任何量,例如等於或大於30%或者等於或大於50%或者等於或大於70%或者等於或大於90%且小於100%。在一實施例中,該凹部形成三維本體3102中介電常數(Dk)值較第二區3140之介電常數(Dk)值相對低之一區。In one embodiment, the
在一實施例中,當在一平面圖或一x-y平面剖面中觀察時,第一區3130具有一整體外剖面尺寸D1;當在一平面圖或一x-y平面剖面中觀察時,第二區3140具有一整體外剖面尺寸D2;且D1小於D2。在一實施例中,當在一平面圖或一x-y平面剖面中觀察時,第二區3140具有為圓形之一外剖面形狀。在一實施例中,當在一平面圖或一x-y平面剖面中觀察時,第二區3140具有為圓形之一內剖面形狀。在一實施例中,D1及D2係為第一區3130及第二區3140之對應外直徑。In one embodiment, when viewed in a plan view or an xy plane cross-section, the
在一實施例中,當在一第一側視立面圖或一x-z平面剖面中觀察時,第一區3130具有一第一剖面輪廓P1A;當在一第二側視立面圖或一y-z平面剖面中觀察時,第一區3130具有一第二剖面輪廓P1B;且P1B不同於P1A。在一實施例中,當在一第一側視立面圖或一x-z平面剖面中觀察時,第一區3130具有一第一剖面輪廓P1A;當在一第二側視立面圖或一y-z平面剖面中觀察時,第一區3130具有一第二剖面輪廓P1B;且P1B與P1A相同。例如,以一非限制性方式,P1A及P1B其中之一個輪廓可遵循一圓形之曲率,而另一輪廓遵循一橢圓形之曲率,或者二個輪廓皆遵循彼此相同之曲率。In one embodiment, when viewed in a first side elevation view or an xz plane cross-section, the
在一實施例中,三維本體3102之外側壁3108相對於一中心z軸係為垂直的(參見第3A圖)。在一實施例中,三維本體3102之外側壁3110相對於一中心z軸係為凹形的(參見第3B圖)。在一實施例中,三維本體3102之外側壁3112相對於一中心z軸係為凸形的(參見第3B圖)。In one embodiment, the
在一實施例中,當在一第一側視立面圖或一x-z平面剖面中觀察時,第二區3140具有一第一外剖面輪廓P2A;當在一第二立面圖或一y-z平面剖面中觀察時,第二區3140具有一第二外剖面輪廓P2B;且P2B與P2A相同。在一實施例中,當在一第一側視立面圖或一x-z平面剖面中觀察時,第二區3140具有一第一外剖面輪廓P2A;當在一第二立面圖或一y-z平面剖面中觀察時,第二區3140具有一第二外剖面輪廓P2B;且P2B不同於P2A。In one embodiment, when viewed in a first side elevation view or an xz plane cross-section, the
在一實施例中,電磁裝置3100更包含:一第三區3150,由具有一第三平均介電常數(Dk3-3100)之一介電材料製成,第三區3150自三維本體3102之近端3104至至少遠端3106包封三維本體3102之外周界之至少各側,第三平均介電常數小於第二平均介電常數且大於空氣介電常數。在一實施例中,第三區3150相對於z軸延伸超出三維本體3102之遠端3106。在一實施例中,第一區3130之介電材料包含第三區3150之介電材料。In one embodiment, the
在一實施例中,電磁裝置3100更包含:一基底基板3200,具有一訊號饋源3202(參見第3B圖),訊號饋源3202用以將三維本體3102電磁激發成向遠場中輻射一電磁場,其中三維本體3102在基底基板3200上相對於訊號饋源3202設置成使得當訊號饋源3202上存在一特定電性訊號時,三維本體3102在中心處受到電磁激發。In one embodiment, the
在一實施例中,一由電磁裝置3100形成之陣列3300(參見第3C圖)在一操作頻率及相關聯之波長下運行,其中:陣列3300包含複數個電磁裝置3100,該等電磁裝置3100其中之每一電磁裝置3100藉由一相對薄之連接結構3302實體連接至該等電磁裝置3100其中之至少另一者以形成一相連陣列3300,各該連接結構3302與該等電磁裝置3100其中之一的一整體外尺寸相較係為相對薄的,各該連接結構3302具有一剖面整體高度H3且係由第二區3140之介電材料形成,剖面整體高度H3小於一相應相連電磁裝置3100之一整體高度H4之20%,各該連接結構3302及相關聯之電磁裝置3100形成相連陣列3300之一單個單片式部分。在一實施例中,各該連接結構3302係靠近三維本體3102之遠端3106設置成遠離三維本體3102之近端3104一距離。在一實施例中,陣列3300更包含一基底基板3200,其中陣列3300設置於基底基板3200上。在一實施例中,連接結構3302更包含與連接結構3302一體地形成並成單片式之至少一個支腳3304,該至少一個支腳3304自連接結構3302向下延伸至基底基板3200。In one embodiment, an
在一實施例中,第二區3140具有靠近三維本體3102之近端3104之一第一部分3142及靠近三維本體3102之遠端3106之一第二部分3144。在一實施例中,第二部分3144緊靠且接觸(在第3C圖中繪示為虛線3306)第一部分3142。在一實施例中,第二部分3144靠近第一部分3142,而在第二部分3144與第一部分3142之間具有為第二平均介電常數之一材料間隙3308。亦即,間隙3308不存在第二區3140之介電材料。In one embodiment, the
在一實施例中,為第二平均介電常數之材料間隙3308包含空氣,其可完全由空氣構成或者可由空氣及除空氣外之另一介電介質構成。在一實施例中,材料間隙3308包含呈一發泡體之形式之一介電介質。In one embodiment, the
在一實施例中,陣列3300更包含一第三區3150,第三區3150由具有一第三平均介電常數(Dk3-3100)之一介電材料製成,第三區3150自三維本體3102之近端3104至至少遠端3106包封三維本體3102之外周界之至少各側,第三平均介電常數小於第二平均介電常數且大於空氣介電常數。In one embodiment, the
在一實施例中,第三區3150藉由橋部分3152在陣列3300之該等電磁裝置3100其中之相鄰電磁裝置3100之間延伸。在一實施例中,第三區3150藉由橋部分3152在陣列3300之該等電磁裝置3100中對應電磁裝置3100之第一部分3142其中之相鄰第一部分3142之間延伸,且第三區3150藉由一空隙3154而不在陣列3300之該等電磁裝置3100中對應電磁裝置3100之第二部分3144其中之相鄰第二部分3144之間延伸。In one embodiment, the
在一實施例中,不存在具有第二平均介電常數之介電材料之間隙3308包含具有第三平均介電常數之介電材料。In one embodiment, the
在陣列3300之一實施例中,基底基板3200包含複數個訊號饋源3202,該等訊號饋源3202其中之每一訊號饋源3202用以將該等電磁裝置3100其中之一對應電磁裝置3100電磁激發成向遠場中輻射一電磁場,其中該等電磁裝置3100其中之一給定電磁裝置3100在基底基板3200上相對於一對應訊號饋源3202設置成使得當該對應訊號饋源3202上存在一特定電性訊號時,該給定電磁裝置3100在中心處受到電磁激發。In an embodiment of the
結合第1A圖至第1C圖共同地特別參照第4A圖及第4B圖對一實例性電磁裝置4100進行以下說明。第4A圖及第4B圖中所繪示之成組正交x-y-z軸4101是出於例示目的,且建立電磁裝置4100之各種特徵相對於彼此之三維排列。An example
在一實施例中,實例性電磁裝置4100包含與電磁裝置1100相當之一結構,其中:第一區1108、4108自一第一基底結構4112至少部分地延伸至三維本體1102、4102之遠端1106、4106,第一基底結構4112靠近三維本體1102、4102之近端1104、4104;第二區1112、4114自三維本體1102、4102之近端1104、4104至少部分地延伸至三維本體1102、4102之遠端1106、4106;三維本體1102、4102更包含設置於第二區1112、4114之徑向外側之一第三區1114、4116,第三區1114、4116由具有小於第二平均介電常數(Dk2-1100)之一第三平均介電常數(Dk3-1100、Dk3-4100)之一介電材料製成,第三區1114、4116自一第二基底結構4118延伸至三維本體1102、4102之遠端1106、4106,第二基底結構4118靠近三維本體1102、4102之近端1104、4104;且三維本體1102、4102更包含設置於第三區1114、4116之徑向外側之一第四區1120、4120,第四區1120、4120由具有大於第三平均介電常數之一第四平均介電常數(Dk4-4100)之一介電材料製成,第四區1120、4120自三維本體1102、4102之近端1104、4104延伸至三維本體1102、4102之遠端1106、4106。In one embodiment, the exemplary electromagnetic device 4100 includes a structure equivalent to the electromagnetic device 1100, in which: the first regions 1108, 4108 extend at least partially from a first base structure 4112 to the distal end 1106 of the three-dimensional body 1102, 4102 , 4106, the first base structure 4112 is close to the proximal end 1104, 4104 of the three-dimensional body 1102, 4102; the second region 1112, 4114 extends at least partially from the proximal end 1104, 4104 of the three-dimensional body 1102, 4102 to the three-dimensional body 1102, 4102 The distal ends 1106, 4106; the three-dimensional body 1102, 4102 further includes a third zone 1114, 4116 disposed on the radially outer side of the second zone 1112, 4114, and the third zone 1114, 4116 has a smaller average dielectric constant ( Dk2-1100) a third average dielectric constant (Dk3-1100, Dk3-4100) is made of a dielectric material, the third regions 1114, 4116 extend from a second base structure 4118 to the three-dimensional body 1102, 4102 The distal end 1106, 4106, the second base structure 4118 is close to the proximal end 1104, 4104 of the three-dimensional body 1102, 4102; and the three-dimensional body 1102, 4102 further includes a fourth zone 1120 disposed on the radially outer side of the third zone 1114, 4116 , 4120, the fourth regions 1120, 4120 are made of a dielectric material having a fourth average dielectric constant (Dk4-4100) which is greater than the third average dielectric constant. The
在另一實施例中,實例性電磁裝置4100包含:一三維本體4102,由一介電材料製成,具有一近端4104及一遠端4106;三維本體4102具有朝向三維本體4102之軸向中心4110設置之一第一區4108,第一區4108由具有一第一平均介電常數(Dk1-4100)之一介電材料製成,第一區4108自一第一基底結構4112至少部分地且在一實施例中僅部分地延伸至三維本體4102之遠端4106,第一基底結構4112靠近三維本體4102之近端4104;三維本體4102具有設置於第一區4108之徑向外側之一第二區4114,第二區4114由具有大於第一平均介電常數之一第二平均介電常數(Dk2-4100)的除空氣外之一介電材料製成,第二區4114自三維本體4102之近端4104至少部分地且在一實施例中僅部分地延伸至三維本體4102之遠端4106;三維本體4102具有設置於第二區4114之徑向外側之一第三區4116,第三區4116由具有小於第二平均介電常數之一第三平均介電常數(Dk3-4100)之一介電材料製成,第三區4116自一第二基底結構4118延伸至三維本體4102之遠端4106,第二基底結構4118靠近三維本體4102之近端4104;且三維本體4102具有設置於第三區4116之徑向外側之一第四區4120,第四區4120由具有大於第三平均介電常數之一第四平均介電常數(Dk4-4100)之一介電材料製成,第四區4120自三維本體4102之近端4104延伸至三維本體4102之遠端4106。在一實施例中,第一區4108之第一基底結構4112當在電磁裝置4100之一立面圖中觀察時具有一厚度H7,且與第二區4114一體地形成並成單片式。在一實施例中,H7等於或小於0.015英吋(inch)。在一實施例中,第一區4108相對於一中心z軸居中設置於三維本體4102內。In another embodiment, the exemplary
在一實施例中,第三區4116係為第一區4108之一連續體(continuum),且第一區4108及第三區4116其中之每一者包含空氣,其可完全由空氣構成或者可由空氣及除空氣外之另一介電介質構成。在一實施例中,第一區4108及第三區4116包含呈一發泡體之形式之一介電介質。在一實施例中,第三區4116係為第一區4108之一連續體,且第一區4108及第三區4116至少其中之一包含除空氣外之一介電材料。在一實施例中,第三區4116包含與第一區4108之介電材料不同之一介電材料。在一實施例中,第三區4116之介電材料具有較第一區4108之介電材料之介電常數小之一介電常數。In one embodiment, the
在一實施例中,第四區4120藉由例如第二基底結構4118而係為第二區4114之一連續體,俾使第二區4114及第四區4120與第二基底結構4118彼此一體地形成以形成一單片體,且第四平均介電常數等於第二平均介電常數。In one embodiment, the
在一實施例中,電磁裝置4100更包含一相對薄之連接結構4122,相對薄之連接結構4122設置於三維本體4102之近端4104處且與第二區4114及第四區4120一體地形成並橋接於第二區4114與第四區4120之間,俾使第二區4114、第四區4120及相對薄之連接結構4122形成一單片體,當在電磁裝置4100之一立面圖中觀察時,相對薄之連接結構4122具有一整體高度H5,整體高度H5小於三維本體4102之一整體高度H6之20%。當在電磁裝置4100之旋轉等角視圖中觀察時,相對薄之連接結構4122具有一整體寬度W5,整體寬度W5小於第二區4114之一整體外尺寸W4。In one embodiment, the
在一實施例中,當在電磁裝置4100之一立面圖中觀察時,第二基底結構4118具有小於H5之一厚度H8。在一實施例中,H8等於或小於0.005英吋或者等於或小於0.003英吋。在一實施例中,第二基底結構4118可係為一單獨層,其係鄰近三維本體4102之第一區4108、第二區4114、第三區4116及第四區4120並在第一區4108、第二區4114、第三區4116及第四區4120下方設置、由介電常數與三維本體4102之介電常數相較相對高且較佳與三維本體4102之介電常數實質上匹配之一介電材料製成。In one embodiment, when viewed in an elevation view of the
在一實施例中,第一區4108係為形成於第二區4114中之一凹部。在一實施例中,凹部延伸達介於自第二區4114之一遠端4124至三維本體4102之近端4104之距離之約30%與約95%間之任何量。在一實施例中,第二區4114及第一區4108具有共有之中心z軸,第三區4116及第二區4114具有共有之中心z軸,且第四區4120及第三區4116具有共有之中心z軸。在一實施例中,當在電磁裝置4100之一平面圖中觀察時,第二區4114完全環繞第一區4108,第三區4116完全環繞第二區4114,且第四區4120完全環繞第三區4116。In one embodiment, the
在一實施例中,當在一平面圖或一x-y平面剖面中觀察時,第二區4114及第四區4120各自具有為圓形之一外剖面形狀。在一實施例中,當在一平面圖或一x-y平面剖面中觀察時,第二區4114及第四區4120各自具有為圓形之一內剖面形狀。In one embodiment, when viewed in a plan view or an x-y plane cross-section, the
在一實施例中,三維本體4102之至少第二區4114及第四區4120之所有暴露內表面之至少一部分自三維本體4102之近端4104朝向遠端4106向內傾斜,如在第4A圖中藉由錐形內表面及外表面所例示。In one embodiment, at least a portion of all exposed inner surfaces of at least the
鑒於上述內容,第一區4108及/或第三區4116係為三維本體4102中之凹部,該等凹部係藉由移除三維本體4102(例如第二區4114及第四區4120)之材料、藉由在形成三維本體4102期間使用一可移除嵌件或者藉由適合於本文中所揭露之一用途之任何其他手段而形成。在一實施例中,前述凹部(例如第一區4108及第三區4116)係為三維本體4102中介電常數較非凹部區(例如第二區4114及第四區4120)相對低之區。In view of the above, the
在一實施例中,電磁裝置4100更包含:一基底基板4200,具有一訊號饋源4202,訊號饋源4202用以將三維本體4102電磁激發成向遠場中輻射一電磁場;其中三維本體4102在基底基板4200上相對於訊號饋源4202設置成使得當訊號饋源4202上存在一特定電性訊號時,三維本體4102在中心處受到電磁激發。In one embodiment, the
在一實施例中,一由電磁裝置4100形成之陣列4300(參見第4B圖)在一操作頻率及相關聯之波長下運行,其中:陣列4300包含設置於一基底基板4200上之複數個電磁裝置4100;基底基板4200具有複數個訊號饋源4202,該等訊號饋源4202其中之每一訊號饋源4202用以將該等電磁裝置4100其中之一對應電磁裝置4100電磁激發成向遠場中輻射一電磁場;其中一給定電磁裝置4100在基底基板4200上相對於一對應訊號饋源4202設置成使得當該對應訊號饋源4202上存在一特定電性訊號時,該給定電磁裝置4100在中心處受到電磁激發。In one embodiment, an
結合第1A圖至第1C圖特別參照第5圖對一實例性電磁裝置5100進行以下說明。第5圖中所繪示之成組正交x-y-z軸5101是出於例示目的,且建立電磁裝置5100之各種特徵相對於彼此之三維排列。An example
在一實施例中,實例性電磁裝置5100包含與電磁裝置1100相當之一結構,其中:第一區1108、5108自一第一基底結構5112至少部分地延伸至三維本體1102、5102之遠端1106、5106,第一基底結構5112靠近三維本體1102、5102之近端1104、5104;第二區1112、5114自三維本體1102、5102之近端1104、5104至少部分地延伸至三維本體1102、5102之遠端1106、5106;三維本體1102、5102更包含設置於第二區1112、5114之徑向外側之一第三區1114、5116,第三區1114、5116由具有小於第二平均介電常數(Dk2-1100)之一第三平均介電常數(Dk3-1100、Dk3-5100)之一介電材料製成,第三區1114、5116自一第二基底結構5118延伸至三維本體1102、5102之遠端1106、5106,第二基底結構5118靠近三維本體1102、5102之近端1104、5104;三維本體1102、5102更包含設置於第三區1114、5116之徑向外側之一第四區1120、5120,第四區1120、5120由具有大於第三平均介電常數之一第四平均介電常數(Dk4-5100)之一介電材料製成,第四區1120、5120自三維本體1102、5102之近端1104、5104延伸至三維本體1102、5102之遠端1106、5106;第二基底結構5118包含設置於三維本體5102之近端5104處之一相對薄之連接結構5122,相對薄之連接結構5122與第二區5114及第四區5120一體地形成並橋接於第二區5114與第四區5120之間,俾使第二區5114、第四區5120及相對薄之連接結構5122彼此一體地形成以形成一單片體,相對薄之連接結構5122具有一整體高度H5,整體高度H5小於三維本體1102之一整體高度H6之30%;且除相對薄之連接結構5122之外,第三區5116中之第二基底結構5118不存在該單片體之介電材料。In one embodiment, the exemplary electromagnetic device 5100 includes a structure equivalent to the electromagnetic device 1100, in which: the first regions 1108, 5108 extend at least partially from a first base structure 5112 to the distal end 1106 of the three-dimensional body 1102, 5102 , 5106, the first base structure 5112 is close to the proximal end 1104, 5104 of the three-dimensional body 1102, 5102; the second region 1112, 5114 extends at least partially from the proximal end 1104, 5104 of the three-dimensional body 1102, 5102 to the three-dimensional body 1102, 5102 The distal ends 1106, 5106; the three-dimensional body 1102, 5102 further includes a third zone 1114, 5116 disposed on the radially outer side of the second zone 1112, 5114, and the third zone 1114, 5116 has an average dielectric constant smaller than the second ( Dk2-1100) a third average dielectric constant (Dk3-1100, Dk3-5100) is made of a dielectric material, the third regions 1114, 5116 extend from a second base structure 5118 to the three-dimensional body 1102, 5102 The distal end 1106, 5106, the second base structure 5118 is close to the proximal end 1104, 5104 of the three-dimensional body 1102, 5102; the three-dimensional body 1102, 5102 further includes a fourth zone 1120, which is disposed radially outside the third zone 1114, 5116, 5120, the fourth regions 1120, 5120 are made of a dielectric material having a fourth average dielectric constant (Dk4-5100) which is greater than the third average dielectric constant. The
在另一實施例中,實例性電磁裝置5100包含:一三維本體5102,由一介電材料製成,具有一近端5104及一遠端5106;三維本體5102具有朝向三維本體5102之中心5110設置之一第一區5108,第一區5108由具有一第一平均介電常數(Dk1-5100)之一介電材料製成,第一區5108自一第一基底結構5112至少部分地延伸至三維本體5102之遠端5106,第一基底結構5112靠近三維本體5102之近端5104;三維本體5102具有設置於第一區5108之徑向外側之一第二區5114,第二區5114由具有大於第一平均介電常數之一第二平均介電常數(Dk2-5100)的除空氣外之一介電材料製成,第二區5114自三維本體5102之近端5104至少部分地延伸至三維本體5102之遠端5106;三維本體5102具有設置於第二區5114之徑向外側之一第三區5116,第三區5116由具有小於第二平均介電常數之一第三平均介電常數(Dk3-5100)之一介電材料製成,第三區5116自一第二基底結構5118延伸至三維本體5102之遠端5106,第二基底結構5118靠近三維本體5102之近端5104;三維本體5102具有設置於第三區5116之徑向外側之一第四區5120,第四區5120由具有大於第三平均介電常數之一第四平均介電常數(Dk4-5100)之一介電材料製成,第四區5120自三維本體5102之近端5104延伸至三維本體5102之遠端5106;其中第二基底結構5118包含設置於三維本體5102之近端5104處之一相對薄之連接結構5122,相對薄之連接結構5122與第二區5114及第四區5120一體地形成並橋接於第二區5114與第四區5120之間,俾使第二區5114、第四區5120及相對薄之連接結構5122彼此一體地形成以形成一單片體,當在電磁裝置5100之一立面圖中觀察時,相對薄之連接結構5122具有一整體高度H5,整體高度H5小於三維本體5102之一整體高度H6之30%;且其中除相對薄之連接結構5122之外,第三區5116中之第二基底結構5118不存在該單片體之介電材料。In another embodiment, the exemplary
在一實施例中,第一區5108之第一基底結構5112當在電磁裝置5100之一立面圖中觀察時具有一厚度H7,且與第二區5114一體地形成並成單片式。在一實施例中,H7等於或小於0.015英吋。In one embodiment, the
在一實施例中,相對薄之連接5122結構具有橋接於第二區5114與第四區5120間之至少二個臂5124。在一實施例中,當在電磁裝置5100之一平面圖中觀察時,相對薄之連接結構5122具有一整體寬度W1,整體寬度W1小於第二區5114之一整體寬度W2。In one embodiment, the relatively
在一實施例中,第一區5108相對於一中心z軸軸向居中設置於三維本體5102內。In an embodiment, the
在一實施例中,第三區5116係為第一區5108之一連續體,且第一區5108及第三區5116其中之每一者包含空氣,其可完全由空氣構成或者可由空氣及除空氣外之另一介電介質構成。在一實施例中,第一區5108及第三區5116包含呈一發泡體之形式之一介電介質。在一實施例中,第三區5116係為第一區5108之一連續體,且第一區5108及第三區5116至少其中之一包含除空氣外之一介電材料。在一實施例中,第三區5116包含與第一區5108之介電材料不同之一介電材料。在一實施例中,第三區5116之介電材料具有較第一區5108之介電材料之介電常數小之一介電常數。在一實施例中,該單片體具有等於第二平均介電常數之一介電常數。在一實施例中,第一區5108係為形成於第二區5114中之一凹部。在一實施例中,可藉由移除第二區5114之材料、藉由在形成第二區5114期間使用一可移除嵌件或者藉由適合於本文中所揭露之一用途之任何其他手段來形成第一區5108之凹部。在一實施例中,凹部延伸達介於自第二區5114之一遠端5126至三維本體5102之近端5104之距離之約30%與約95%間之任何量。在一實施例中,第二區5114及第一區5108具有共有之中心z軸,第三區5116及第二區5114具有共有之中心z軸,且第四區5120及第三區5116具有共有之中心z軸。在一實施例中,當在電磁裝置5100之一平面圖中觀察時,第二區5114完全環繞第一區5108,第三區5116完全環繞第二區5114,且第四區5120完全環繞第三區5116。In one embodiment, the
在一實施例中,當在電磁裝置5100之一立面圖中觀察時,第二區5114之至少一部分具有一凸形外表面5128。在一實施例中,凸形外表面5128自三維本體5102之近端5104延伸至第二區5114之遠端5126。In one embodiment, when viewed in an elevation view of the
在一實施例中,當在電磁裝置5100之一平面圖中觀察時以及當在一x-y平面剖面中觀察時,第二區5114及第四區5120各自具有為圓形之一外剖面形狀。在一實施例中,當在電磁裝置5100之一平面圖中觀察時以及當在一x-y平面剖面中觀察時,第二區5114及第四區5120各自具有為圓形之一內剖面形狀。在一實施例中,三維本體5102之至少第二區5114及第四區5120之所有暴露內表面之至少一部分自三維本體5102之近端5104朝向遠端5106向內傾斜。In one embodiment, when viewed in a plan view of the
在一實施例中,電磁裝置5100更包含:一基底基板(例如,參見4200,第4A圖及第4B圖),具有一訊號饋源(例如,參見4202,第4A圖及第4B圖),該訊號饋源用以將三維本體5102電磁激發成向遠場中輻射一電磁場;其中三維本體5102在基底基板上相對於訊號饋源設置成使得當訊號饋源上存在一特定電性訊號時,三維本體5102在中心處受到電磁激發。In one embodiment, the
在一實施例中,一由電磁裝置5100形成之陣列(例如,參見4300,第4B圖)在一操作頻率及相關聯之波長下運行,其中:該陣列包含設置於一基底基板(例如,參見4200,第4B圖)上之複數個電磁裝置5100;該基底基板包含複數個訊號饋源(例如,參見4202,第4B圖),該等訊號饋源其中之每一訊號饋源用以將該等電磁裝置5100其中之一對應電磁裝置5100電磁激發成向遠場中輻射一電磁場;其中一給定電磁裝置5100在基底基板上相對於一對應訊號饋源設置成使得當該對應訊號饋源上存在一特定電性訊號時,該給定電磁裝置5100在中心處受到電磁激發。In one embodiment, an array formed by the electromagnetic device 5100 (for example, see 4300, Figure 4B) operates at an operating frequency and associated wavelength, wherein: the array includes a base substrate (for example, see 4200, Fig. 4B) a plurality of
結合第1A圖至第1C圖共同地特別參照第圖6A、第6B圖、第6C圖、第6D圖、第6E圖、第6F圖、第6G圖、第6H圖、第6I圖及第6J圖對一實例性電磁裝置6100進行以下說明。第6B圖至第6C圖、第6I圖及第6J圖中所繪示之成組正交x-y-z軸6101是出於例示目的,且建立電磁裝置6100之各種特徵相對於彼此之三維排列。Refer to FIGS. 6A, 6B, 6C, 6D, 6E, 6F, 6G, 6H, 6I, and 6J in conjunction with FIGS. 1A to 1C. The figure below illustrates an example
在一實施例中,實例性電磁裝置6100包含與電磁裝置1100相當之一結構,實例性電磁裝置6100更包含:一基底基板6200,具有延伸穿過基底基板6200之第一複數個通路6204;其中三維本體1102、6102包含除空氣外之一介質,三維本體1102、6102之近端1104、6104在基底基板6200上設置成使得三維本體1102、6102至少部分地或完全覆蓋第一複數個通路6204;其中第一複數個通路6204至少部分地填充有三維本體1102、6102之介電材料,俾使三維本體1102、6102及第一複數個通路6204之介電材料形成一單片體。In one embodiment, the exemplary
在另一實施例中,實例性電磁裝置6100包含:一基底基板6200,具有自一側至一相對側延伸穿過基底基板6200之第一複數個通路6204;一三維本體6102,由一介電材料製成,該介電材料由除空氣外之一介質構成,三維本體6102具有一近端6104及一遠端6106,三維本體6102之近端6104在基底基板6200上設置成使得三維本體6102至少部分地或完全覆蓋第一複數個通路6204;其中第一複數個通路6204至少部分地填充有三維本體6102之介電材料,俾使三維本體6102及第一複數個通路6204之介電材料形成一單片體。在一實施例中,三維本體6102完全覆蓋第一複數個通路6204。在一實施例中,第一複數個通路6204完全填充有三維本體6102之介電材料。在一實施例中,三維本體6102之介電材料係為一可成型介電材料。In another embodiment, the exemplary
在一實施例中,基底基板6200更包含第二複數個通路6206,該第二複數個通路6206可由三維本體6102完全覆蓋、由三維本體6102部分地覆蓋、或者相對於三維本體6102完全暴露出。在一實施例中,由三維本體6102完全或部分地覆蓋之第二複數個通路6206至少部分地填充有三維本體6102之介電材料或填充有一導電材料(例如但不限於銅);且相對於三維本體6102完全暴露出之第二複數個通路6206填充有一導電材料(例如但不限於銅)。In an embodiment, the
依據對第一複數個通路6204及第二複數個通路6206之上述說明,應瞭解,可在該二者之間作出區別。亦即,第一複數個通路6204必定至少部分地填充有三維本體6102之介電材料,而第二複數個通路6206未必至少部分地填充有三維本體6102之介電材料。在一實施例中,第一複數個通路6204可用作將三維本體6102錨定至基板6200之一結構錨(structural anchor),且第二複數個通路6206可用作一狹槽式開孔訊號饋源(以下進一步論述)之一導電壁。Based on the above description of the first plurality of
在一實施例中,基底基板6200更包含一訊號饋源6202,訊號饋源6202用以當訊號饋源6202上存在一特定電性訊號時將三維本體6102電磁激發成向遠場中輻射一電磁場。在一實施例中,三維本體6102在基底基板6200上相對於訊號饋源6202設置成使得當訊號饋源6202上存在一特定電性訊號時,三維本體6102在中心處受到電磁激發。在一實施例中,訊號饋源6202包含一帶狀線(stripline)6208及狹槽式開孔(slotted aperture)6210(參見第6D圖),狹槽式開孔6210由三維本體6102完全覆蓋。In one embodiment, the
在一實施例中,現在特別參照第6A圖、第6B圖及第6D圖,基底基板6200包含:一導電下部層6212,提供一電性接地參考電位;一導電上部層6214,電性連接至接地參考電位;以及至少一個介電基板6216、6218,設置於導電下部層6212與導電上部層6214之間;且三維本體6102之近端6104設置於上部層6214上。In an embodiment, referring to FIGS. 6A, 6B, and 6D in particular, the
在一實施例中,前述至少一個介電基板包含:一第一介電基板6216,鄰近導電下部層6212之一上表面設置;以及一第二介電基板6218,鄰近導電上部層6214之一下表面設置;且基底基板6200更包含一薄膜黏合劑接合夾層(thin film adhesive bondply)6220,薄膜黏合劑接合夾層6220設置於第一介電基板6216與第二介電基板6218之間且貼附至第一介電基板6216及第二介電基板6218,其中帶狀線6208在狹槽式開孔6210下方且正交於狹槽式開孔6210設置於薄膜黏合劑6220與第二介電基板6218之間。In one embodiment, the aforementioned at least one dielectric substrate includes: a
在一實施例中,三維本體6102具有一第一區6108,第一區6108朝向三維本體6102之中心6110,由具有一第一平均介電常數(Dk1-6100)之一介電材料製成,第一區6108自一第一基底結構6112至少部分地延伸至三維本體6102之遠端6106,第一基底結構6112靠近三維本體6102之近端6104;三維本體6102具有設置於第一區6108之徑向外側之一第二區6114,第二區6114由具有大於第一平均介電常數之一第二平均介電常數(Dk2-6100)的除空氣外之一介電材料製成,第二區6114自三維本體6102之近端6104至少部分地延伸至三維本體6102之遠端6106;三維本體具有設置於第二區6114之徑向外側之一第三區6116,第三區6116由具有小於第二平均介電常數之一第三平均介電常數(Dk3-6100)之一介電材料製成,第三區6116自一第二基底結構6118延伸至三維本體6102之遠端6106,第二基底結構6118靠近三維本體6102之近端6104;三維本體6102具有設置於第三區6116之徑向外側之一第四區6120,第四區6120由具有大於第三平均介電常數之一第四平均介電常數(Dk4-6100)之一介電材料製成,第四區6120自三維本體6102之近端6104延伸至三維本體6102之遠端6106;其中第二基底結構6118包含設置於三維本體6102之近端6104處之一相對薄之連接結構6122,相對薄之連接結構6122與第二區6114及第四區6120一體地形成並橋接於第二區6114與第四區6120之間,俾使第二區6114、第四區6120及相對薄之連接結構6122彼此一體地形成以形成電磁裝置6100之前述單片體之一部分,當在電磁裝置6100之一立面圖中觀察時,相對薄之連接結構6122具有一整體高度H5,整體高度H5小於三維本體6102之一整體高度H6之30%;且其中除相對薄之連接結構6122之外,第三區6116中之第二基底結構6118不存在該單片體之介電材料。In one embodiment, the three-
在一實施例中,當在電磁裝置6100之一立面圖中觀察時,第一區6108之第一基底結構6112具有一厚度H7且與第二區6114一體地形成並成單片式。在一實施例中,H7等於或小於0.015英吋。In one embodiment, when viewed in an elevation view of the
在一實施例中,狹槽式開孔6210由第一區6108之第一基底結構6112及三維本體6102之第二區6114完全覆蓋。In one embodiment, the
在一實施例中,相對薄之連接結構6122具有橋接於第二區6114與第四區6120間之至少二個臂6124。在一實施例中,當在電磁裝置6100之一平面圖中觀察時,相對薄之連接結構6122具有一整體寬度W1,整體寬度W1小於第二區6114之一整體寬度W2。In one embodiment, the relatively thin
在一實施例中,三維本體6102藉由三維本體6102之介電材料至少部分地填充第一複數個通路6204且與第一複數個通路6204成一體而錨定至基底基板。In one embodiment, the three-
在一實施例中,當在電磁裝置6100之一平面圖或一x-y平面剖面中觀察時,特別參照第6A圖及第6B圖,第一複數個通路6204包含:第一對徑向相對之通路6222,具有一整體寬度尺寸D3;第二對徑向相對之通路6224,具有一整體寬度尺寸D4;以及第三對徑向相對之通路6226,具有一整體寬度尺寸D5。在一實施例中,D4小於D3,且D5等於D4。在一實施例中,尺寸D3、D4及D5係為直徑尺寸。In one embodiment, when viewed in a plan view or an xy plane cross-section of the
在一實施例中,特別參照第6B圖、第6C圖及第6D圖,電磁裝置6100更包含:一電磁反射結構6300,具有一導電結構6302及與導電結構6302一體地形成或電性連通之一導電電磁反射體6304;其中電磁反射結構6300設置於導電上部層6214上或與導電上部層6214電性連通;其中導電電磁反射體6304形成一壁6306,當在電磁裝置6100之一平面圖中觀察時,壁6306界定且至少部分地外接(circumscribe)或環繞一凹槽6308;其中三維本體6102設置於凹槽6308內。在一實施例中,當在電磁裝置6100之一立面圖中觀察時,反射體6304之壁6306具有一高度H9,高度H9大於第二區6114之一高度H10。In one embodiment, referring in particular to Figures 6B, 6C, and 6D, the
在一實施例中,特別參照第6E圖且因應於訊號饋源6202上存在一40十億赫(GHz)電性訊號,三維本體6102用以下特性向遠場中輻射具有一寬視場(FOV)之一電磁場:包含在電場(E-field)方向上等於或大於+/- 60度之一3dBi波束寬度之一增益分佈(gain profile)(參見第6E圖);包含在磁場(H-field)方向上等於或大於+/- 45度之一3dBi波束寬度之一增益分佈;包含在電場方向上等於或大於+/- 90度之一6dBi波束寬度之一增益分佈;以及包含在磁場方向上等於或大於+/- 60度之一6dBi波束寬度之一增益分佈。In one embodiment, referring specifically to Figure 6E and due to the presence of a 40 gigahertz (GHz) electrical signal on the
在一實施例中,特別參照第6G圖及第6H圖,且因應於訊號饋源6202上存在一特定十億赫電性訊號,三維本體6102以以下特性向遠場中輻射一電磁場:在36十億赫下為約4.4 dBi至在41十億赫下為約5.8 dBi之一正角增益(boresight gain),具有大於10%之一所得頻寬。在一實施例中,因應於訊號饋源6202上存在一特定十億赫電性訊號,三維本體6102以以下特性向遠場中輻射一電磁場:在36十億赫下為約4.4 dBi至在46十億赫下為約6 dBi之一正角增益,具有一所得相對平坦之增益及大於20%之一頻寬。In one embodiment, referring specifically to Figures 6G and 6H, and in response to the presence of a specific gigahertz electrical signal on the
在一實施例中,特別參照第6I圖及第6J圖,一由電磁裝置6100形成之陣列6400在一操作頻率及相關聯之波長下運行,其中:陣列6400包含以一並排排列方式設置之複數個電磁裝置6100,其中各該電磁裝置6100之基底基板6200係為一相鄰基底基板6200之一連續延伸部以形成一總體基底基板6230,其中各該電磁裝置6100相對於該等電磁裝置6100其中之一鄰近電磁裝置6100具有一離散訊號饋源6202(參見第6B圖),且其中各該離散訊號饋源6202用以當相關聯之訊號饋源6202上存在一特定電性訊號時將一對應三維本體6100電磁激發成向遠場中輻射一電磁場。In one embodiment, with particular reference to Figures 6I and 6J, an
在一實施例中,一種製作電磁裝置6100之方法包含:藉由自基底基板6200之一底側或背側穿過第一複數個通路6204對一可成型介電介質進行射出成型而將三維本體6102成型至基底基板6200之一頂側上;以及將介電介質至少部分地固化。In one embodiment, a method of manufacturing the
共同地特別參照第7A圖、第7B圖、第7C圖及第7D圖且鑒於本文中所揭露之其他各圖及結構對一實例性天線子系統7000進行以下說明。第7A圖至第7D圖中所繪示之成組正交x-y-z軸7101是出於例示目的,且建立電磁裝置7100之各種特徵相對於彼此之三維排列。The following description of an
在一實施例中,用於一由電磁裝置7100(例如本文中所揭露之任何電磁裝置1100、2100、3100、4100、5100、6100)形成之可轉向陣列之實例性天線子系統7000包含:複數個電磁裝置7100,該等電磁裝置7100其中之每一電磁裝置7100具有排列及設置於一表面7002(參見第7B圖)上之一寬視場介電共振天線7150;一子系統板7010,對於該等電磁裝置7100其中之每一電磁裝置7100,具有一訊號饋源結構7202(參見第7A圖);該等電磁裝置7100貼附至子系統板7010。In one embodiment, an
在一實施例中,各該介電共振天線7150具有一三維本體7102(參見本文中所揭露之其他三維本體),三維本體7102具有一第一區(例如參見1108,第1C圖),該第一區朝向三維本體7102之中心、由具有一第一平均介電常數(Dk1-7100)之一介電材料製成,該第一區延伸至三維本體之遠端;且三維本體7102具有設置於第一區之徑向外側之一第二區(例如參見1112,第1C圖),該第二區由具有大於第一平均介電常數之一第二平均介電常數(Dk2-7100)的除空氣外之一介電材料製成,該第二區自三維本體之近端延伸至遠端。In one embodiment, each of the dielectric
在一實施例中,該等電磁裝置7100係排列成一x×y陣列。在一實施例中,介電共振天線7150排列於一二維(two-dimensional;2D)表面上。在一實施例中,訊號饋源結構7202包含具有一訊號輸入端7204之一訊號線。在一實施例中,對於各該電磁裝置7100,子系統板7010更包含一訊號通訊路徑7012,訊號通訊路徑7012在其一端處設置有一輸入埠7014,訊號通訊路徑7012之另一相對端電性連接至一對應訊號饋源結構7202之訊號輸入端7204。在一實施例中,子系統板7010之各該輸入埠7014可連接至一電磁波束轉向子系統7500(參見第7D圖)。In one embodiment, the
在一實施例中,特別參照第7D圖,一電磁波束轉向子系統7500包含連接至數個訊號通訊通道7504之一電磁波束轉向晶片7502,與電磁波束轉向晶片7502相關聯之各該訊號通訊通道7504具有一對應輸出端7506,訊號通訊通道7504及輸出端7506之數目等於第7A圖及第7B圖中所繪示之該等電磁裝置7100之數目;其中電磁波束轉向子系統7500之一對應訊號通訊通道7504之各該輸出端7506連接至天線子系統7000之子系統板7010之一對應輸入埠7014。在一實施例中,波束轉向晶片7502係設置成與設置於子系統板7010下方之一散熱器7508熱連通,波束轉向晶片7502亦可用以為波束轉向功能提供一相移及/或時間延遲。In one embodiment, referring particularly to Figure 7D, an electromagnetic
在一實施例中,特別參照第7A圖,子系統板7010更包含從中延伸之複數組非導電通路(例如,參見6204,第6A圖),各該組非導電通路與該等電磁裝置7100其中之一不同電磁裝置7100相關聯;一對應電磁裝置7100之各該三維本體7102由一介電材料製成,該介電材料由除空氣外之一介質構成,各該三維本體7102具有一近端及一遠端(例如,參見6104及6106,第6C圖),各該三維本體7102之近端在子系統板7010上設置成使得各該三維本體7102至少部分地或完全覆蓋對應之一組非導電通路;且該等組非導電通路至少部分地填充有相關聯三維本體7102之介電材料,俾使各該三維本體7102及經至少部分地填充的對應之該組非導電通路之介電材料形成一單片體(參見與電磁裝置6100有關之前述說明)。在一實施例中,三維本體7102完全覆蓋對應之該組非導電通路。在一實施例中,該等組非導電通路完全填充有相關聯三維本體7102之介電材料。在一實施例中,該等組非導電通路在導電下部層與導電上部層之間延伸。In one embodiment, referring specifically to FIG. 7A, the
在一實施例中,子系統板7010更包含:一導電下部層;一導電上部層;一第一介電基板,鄰近該導電下部層之一上表面設置;一第二介電基板,鄰近該導電上部層之一下表面設置;以及一薄膜黏合劑,設置於該第一介電基板與該第二介電基板之間且貼附至該第一介電基板及該第二介電基板(例如,參見6212、6214、6216、6218、6220,第6D圖)。In one embodiment, the
在一實施例中,亦參照第6D圖,訊號饋源結構7202更包含:一帶狀線7208(例如亦參見6208,第6D圖),設置於薄膜黏合劑6220與第二介電基板6218之間,導電上部層6214具有設置於對應帶狀線7208(亦參見6208,第6D圖)上方且正交於對應帶狀線7208之一狹槽式開孔(例如參見6210,第6D圖),各該帶狀線7208具有訊號輸入端7204,各該狹槽式開孔由對應電磁裝置7100之三維本體7102(亦參見6102,第6D圖)完全覆蓋,三維本體7102之近端設置於導電上部層上。In one embodiment, referring also to FIG. 6D, the
在一實施例中,與帶狀線7208相似,子系統板7010之訊號通訊路徑7012設置於薄膜黏合劑與第二介電基板之間,訊號通訊路徑7012在其一端處設置有輸入埠7014,訊號通訊路徑之另一相對端電性連接至一對應帶狀線7208之訊號輸入端7204。In one embodiment, similar to the
在一實施例中,子系統板7010更包含將導電上部層連接至導電下部層之第一複數個導電通路7016,該第一複數個導電通路7016設置於該等訊號通訊路徑7012其中之相應訊號通訊路徑7012之每一側上,以用於鄰近一對應訊號通訊路徑7012提供一導電壁。In one embodiment, the
在一實施例中,基板板7010更包含將導電上部層連接至導電下部層之第二複數個導電通路7018,該第二複數個導電通路7018設置於帶狀線7208其中之相應帶狀線7208之每一側上及一端處,以用於鄰近一對應訊號饋源結構7202提供一導電壁。In one embodiment, the
共同地特別參照第8A圖、第8B圖、第8C圖、第8D圖、第8E圖及第8F圖且鑒於本文中所揭露之其他各圖及結構對一實例性天線子系統8000進行以下說明。第8A圖至第8D圖中所繪示之成組正交x-y-z軸8101係出於例示目的,且建立電磁裝置8100之各種特徵相對於彼此之三維排列。An
在一實施例中,用於一由電磁裝置8100(例如本文中所揭露之任何電磁裝置1100、2100、3100、4100、5100、6100)形成之可轉向陣列之實例性天線子系統8000包含:複數個電磁裝置8100,該等電磁裝置8100其中之每一電磁裝置8100具有排列及設置於一表面8002上之一寬視場介電共振天線8150,該等電磁裝置8100其中之每一電磁裝置8100更具有一基底基板8200,各該基底基板8200包含設置成與一對應介電共振天線8150進行電磁訊號通訊之一訊號饋源結構8202;其中各該電磁裝置8100之基底基板8200係為一相鄰基底基板8200之一連續延伸部以形成一總體基底基板8230,介電共振天線8150貼附至該總體基底基板8230;其中該總體基底基板8230包含數目與介電共振天線8150之數目相等之複數個輸入埠8204,各該輸入埠8204電性連接至與一對應介電共振天線8150進行訊號通訊之一對應訊號饋源結構8202;天線子系統8000提供適合將電磁裝置8100排列成可由多個天線子系統8000形成之任何排列大小之一結構。In one embodiment, an
在一實施例中,各該介電共振天線8150具有一三維本體8102(參見本文中所揭露之其他三維本體)具有一第一區(例如,參見1108,第1C圖),該第一區朝向三維本體8102之中心、由具有一第一平均介電常數(Dk1-8100)之一介電材料製成,該第一區延伸至三維本體8102之遠端;且三維本體8102具有設置於第一區外側之一第二區(例如,參見1112,第1C圖),該第二區由具有大於第一平均介電常數之一第二平均介電常數(Dk2-8100)的除空氣外之一介電材料製成,該第二區自三維本體之近端延伸至遠端。In one embodiment, each of the dielectric
在一實施例中,該等電磁裝置8100係排列成一x×y陣列。在一實施例中,介電共振天線8150排列於一二維(2D)表面8002上。In one embodiment, the
在一實施例中,該總體基底基板8230之該等輸入埠8204其中之每一輸入埠8204係為一焊料墊(solder pad)。在一實施例中,該總體基底基板8230之該等輸入埠8204可連接至一電磁波束轉向子系統8500。In one embodiment, each of the
在一實施例中,天線子系統8000更包含:一電磁波束轉向子系統8500,具有連接至複數個訊號通訊通道8504之一電磁波束轉向晶片8502,與電磁波束轉向晶片8502相關聯之各該訊號通訊通道8504具有一對應輸出埠8506;其中電磁波束轉向子系統8500之各該輸出埠8506連接至天線子系統8000之總體基底基板8230之一對應輸入埠8204。In one embodiment, the
在一實施例中,各該基底基板8200包含(參照第6D圖中所繪示且上文中所闡述之細節):一導電下部層6212;一導電上部層6214;一第一介電基板6216,鄰近導電下部層6212之一上表面設置;以及一第二介電基板6218,鄰近導電上部層6214之一下表面設置;以及一薄膜黏合劑6220,設置於第一介電基板6216與第二介電基板6218之間且貼附至第一介電基板6216及第二介電基板6218;一帶狀線6208,設置於薄膜黏合劑6220與第二介電基板6218之間,導電上部層6214具有設置於帶狀線6208上方且正交於帶狀線6208之一狹槽式開孔6210,各該狹槽式開孔6210由對應電磁裝置8100之三維本體8102完全覆蓋,且三維本體8102之近端設置於導電上部層6214上。In one embodiment, each
在一實施例中,各該輸入埠8204電性連接至與一相關聯狹槽式開孔6210進行訊號通訊之一對應帶狀線6208,該相關聯狹槽式開孔6210設置於一給定電磁裝置8100之三維本體8102之下。In one embodiment, each of the
在一實施例中,用於一由電磁裝置8100形成之可轉向陣列之一天線陣列8600包含複數個8300覆瓦式天線子系統8000。在一實施例中,具有該等覆瓦式天線子系統8000之天線陣列8600可形成為一非平面構形。在一實施例中,天線陣列8600具有呈一撓性電路板之形式之一總體基底基板8230。In one embodiment, an
在一實施例中,如第8C圖中所繪示,天線子系統8000可包含具有一由介電共振天線8150形成之10×10陣列之一覆瓦式陣列8300或者具有一由介電共振天線8150形成之2×2陣列之一5×5覆瓦式子系統陣列,在一實施例中,該陣列可超過一由介電共振天線8150形成之128×128陣列或者具有一由介電共振天線8150形成之2×2陣列之一64×64覆瓦式部件陣列或更大陣列。第8E圖繪示具有結合第8A圖至第8D圖所繪示及闡述之組件之一可轉向天線陣列8600之一圖示,在一實施例中,可轉向天線陣列8600產生可在一維或二維上轉向且可用以進行發射、接收或發射及接收之一可轉向波束8610。在一實施例中,例如,天線陣列8600可用作一通訊系統或雷達系統(radar system)。In one embodiment, as shown in FIG. 8C, the
在一實施例中,如第8F圖中所繪示,天線陣列8600可排列於一撓性電路板8230上,撓性電路板8230在適當彎曲時可達成+/- 90度之波束轉向。在一實施例中,設想出將僅需要二個陣列面板來使一電磁波束轉向完整的360度,此與現有之波束轉向天線陣列相較將提供相當大的系統級成本降低。In one embodiment, as shown in FIG. 8F, the
儘管本文中所揭露之實施例將一代表性電磁訊號饋源例示為一狹槽式開孔訊號饋源,但應瞭解,此係僅出於例示目的,且本發明之範圍涵蓋適合於本文中所揭露之一用途之任何電磁訊號饋源。Although the embodiments disclosed herein exemplify a representative electromagnetic signal feed as a slot-type aperture signal feed, it should be understood that this is for illustrative purposes only, and the scope of the present invention is suitable for use herein Any electromagnetic signal feed for one of the purposes disclosed.
儘管本文中已闡述及例示單獨特徵之某些組合,但應瞭解,該某些特徵組合僅係出於例示目的且根據一實施例可採用此等單獨特徵其中之任一者之任何組合,而不論此種組合是否明確例示及與本文中之揭露內容一致。本文中設想出本文中所揭露之任意及所有此等特徵組合,當將本申請案作為整體進行考量時,該等組合被視為處於熟習此項技術者之理解範圍內,且該等組合被視為以熟習此項技術者將理解之方式處於隨附申請專利範圍之範圍內。Although some combinations of individual features have been described and exemplified herein, it should be understood that the certain combinations of features are for illustrative purposes only and any combination of any of these individual features may be used according to an embodiment, and Regardless of whether this combination is clearly illustrated and consistent with the disclosure in this article. This article contemplates any and all combinations of these features disclosed in this article. When the application is considered as a whole, these combinations are deemed to be within the understanding of those familiar with the art, and these combinations are It is deemed to be within the scope of the attached patent application in a way that those familiar with the technology will understand.
儘管本文中已參照實例性實施例闡述了發明,但熟習此項技術者應理解,可作出各種改變且可以等效內容來代替其要素,此並不背離申請專利範圍之範圍。可作出諸多潤飾以使一特定情形或材料適應於本發明之教示內容,此並不背離本發明之本質範圍。因此,本發明並非旨在僅限於將本文中所揭露之特定實施例作為用於實施本發明的所設想出之最佳或僅有方式,而是本發明將包含歸屬於隨附申請專利範圍之範圍內之所有實施例。在圖式及說明中,已揭露了實例性實施例,且雖然可能已採用了具體用語及/或尺寸,但除非另有陳述,否則該等具體用語及/或尺寸是以一般、實例性及/或說明性意義使用而非用於進行限制,申請專利範圍之範圍因此不受此限制。當一元件被稱為在另一元件「上」時,該元件可直接在該另一元件上,或者亦可存在中間元件。對比之下,當一元件被稱為「直接」在另一元件「上」時,不存在中間元件。所使用之用語「第一」、「第二」等並不表示任何次序或重要性,而是用語「第一」、「第二」等僅用於將一個元件與另一元件區分開。所使用之用語「一(a、an)」等並不表示對數量之限制,而是表示存在所提及項至少其中之一。本文中所使用之用語「包含」並不排除可能包含一或多個附加特徵。並且,提供本文中所提供之任何背景資訊係為了揭露本申請人認為可能與本文中所揭露之發明有關之資訊。既未必旨在承認亦不應理解成,任何此種背景資訊相對於本文中所揭露之本發明之一實施例構成先前技術。Although the invention has been described herein with reference to exemplary embodiments, those skilled in the art should understand that various changes can be made and equivalent content can be substituted for its elements, which does not depart from the scope of the patent application. Many modifications can be made to adapt a specific situation or material to the teachings of the present invention, which does not depart from the essential scope of the present invention. Therefore, the present invention is not intended to be limited to the specific embodiments disclosed herein as the best or only way conceived for implementing the present invention, but the present invention will include the scope of the appended application All embodiments within the scope. In the drawings and descriptions, exemplary embodiments have been disclosed, and although specific terms and/or dimensions may have been used, unless otherwise stated, the specific terms and/or dimensions are general, exemplary and / Or used in illustrative meaning rather than used to limit, the scope of the patent application is therefore not limited by this. When an element is referred to as being "on" another element, the element can be directly on the other element, or intervening elements may also be present. In contrast, when an element is said to be "directly" on another element, there is no intermediate element. The terms "first", "second", etc. used do not indicate any order or importance, but the terms "first", "second", etc. are only used to distinguish one element from another. The term "一 (a, an)", etc. used does not indicate a restriction on the quantity, but indicates the existence of at least one of the mentioned items. The term "include" used in this article does not exclude the possibility of including one or more additional features. Moreover, any background information provided in this article is provided to disclose information that the applicant believes may be related to the invention disclosed in this article. It is neither intended to admit nor should it be understood that any such background information constitutes prior art with respect to an embodiment of the invention disclosed herein.
鑒於所有上述內容,應瞭解,本文中揭露一實施例之各種態樣,該等態樣係根據但不限於至少以下態樣及態樣組合。In view of all the foregoing, it should be understood that various aspects of an embodiment are disclosed herein, and these aspects are based on but not limited to at least the following aspects and aspect combinations.
態樣1. 一種電磁(electromagnetic;EM)裝置,包含:一三維(three dimensional;3D)本體,由一介電材料製成,具有一近端及一遠端;該三維本體具有一第一區,該第一區朝向該三維本體之中心、由具有一第一平均介電常數之一介電材料製成,該第一區至少部分地延伸至該三維本體之該遠端;且該三維本體具有在該第一區外側之一第二區,該第二區由具有大於該第一平均介電常數之一第二平均介電常數的除空氣外之一介電材料製成,該第二區自該三維本體之該近端延伸至該遠端。
態樣2. 如態樣1所述之電磁裝置,其中:該第一區居中設置於該三維本體內。Aspect 2. The electromagnetic device according to
態樣3. 如態樣1至2中任一項所述之電磁裝置,其中:該第一區包含空氣。Aspect 3. The electromagnetic device according to any one of
態樣4. 如態樣1至3中任一項所述之電磁裝置,其中:該第一區相對於該第二區係為該三維本體中之一凹部(depression),該凹部自該遠端朝向該近端延伸。Aspect 4. The electromagnetic device according to any one of
態樣5. 如態樣4所述之電磁裝置,其中:該凹部延伸達介於自該三維本體之該遠端至該近端之距離之約30%與約100%間之任何量。Aspect 5. The electromagnetic device according to aspect 4, wherein the recess extends to any amount between about 30% and about 100% of the distance from the distal end to the proximal end of the three-dimensional body.
態樣6. 如態樣1至5中任一項所述之電磁裝置,其中:該三維本體更包含在該第二區外側之一第三區,該第三區由具有小於該第二平均介電常數之一第三平均介電常數之一介電材料製成,該第三區自該三維本體之該近端延伸至該遠端。Aspect 6. The electromagnetic device according to any one of
態樣7. 如態樣6所述之電磁裝置,其中:該第三區包含以下材料之一組合:具有該第二平均介電常數之一介電材料、及另一介電材料。Aspect 7. The electromagnetic device according to aspect 6, wherein: the third region includes a combination of the following materials: a dielectric material having the second average dielectric constant, and another dielectric material.
態樣8. 如態樣7所述之電磁裝置,其中:該第三區之該另一介電材料係為空氣。Aspect 8. The electromagnetic device according to aspect 7, wherein: the other dielectric material of the third zone is air.
態樣9. 如態樣6至8中任一項所述之電磁裝置,其中:該第三區包含自該第二區徑向向外延伸且與該第二區成一體及單片式之複數個突出部(projection)。Aspect 9. The electromagnetic device according to any one of aspects 6 to 8, wherein: the third zone includes a one-piece and one-piece type that extends radially outward from the second zone and is integrated with the second zone Plural projections.
態樣10. 如態樣9所述之電磁裝置,其中:當在一x-y平面剖面中觀察時,該等突出部其中之每一者具有一剖面整體長度L1及一剖面整體寬度W1,其中L1及W1各自小於λ,其中λ係為當該電磁裝置受到電磁激發時該電磁裝置之一操作波長。Aspect 10. The electromagnetic device according to aspect 9, wherein: when viewed in an xy plane cross section, each of the protrusions has a cross-sectional overall length L1 and a cross-sectional overall width W1, where L1 And W1 are each smaller than λ, where λ is an operating wavelength of the electromagnetic device when the electromagnetic device is electromagnetically excited.
態樣11. 如態樣10所述之電磁裝置,其中:L1及W1各自小於λ/4。Aspect 11. The electromagnetic device as described in aspect 10, wherein: L1 and W1 are each smaller than λ/4.
態樣12. 如態樣9至11中任一項所述之電磁裝置,其中:當在一x-y平面剖面中觀察時,該等突出部其中之每一者具有自寬至窄徑向呈錐形之一剖面形狀。Aspect 12. The electromagnetic device according to any one of aspects 9 to 11, wherein: when viewed in an xy plane cross-section, each of the protrusions has a radially tapered shape from wide to narrow One of the cross-sectional shapes.
態樣13. 如態樣1至12中任一項所述之電磁裝置,更包含:一第四區,由具有一第四平均介電常數的除空氣外之一介電材料製成;其中該第四區實質上環繞該三維本體之該近端,且其中該第四平均介電常數不同於該第三平均介電常數。Aspect 13. The electromagnetic device according to any one of
態樣14. 如態樣6至12中任一項所述之電磁裝置,更包含:一第四區,由具有一第四平均介電常數的除空氣外之一介電材料製成;其中該第四區在該三維本體之該近端處實質上環繞該第三區;且其中該第四平均介電常數不同於該第三平均介電常數。Aspect 14. The electromagnetic device according to any one of aspects 6 to 12, further comprising: a fourth zone, made of a dielectric material other than air with a fourth average dielectric constant; wherein The fourth area substantially surrounds the third area at the proximal end of the three-dimensional body; and wherein the fourth average dielectric constant is different from the third average dielectric constant.
態樣15. 如態樣14所述之電磁裝置,其中:該第三區包含以下材料之一組合:具有該第四平均介電常數之一介電材料、及另一介電材料。Aspect 15. The electromagnetic device according to aspect 14, wherein: the third region includes a combination of the following materials: a dielectric material having the fourth average dielectric constant, and another dielectric material.
態樣16. 如態樣14至15中任一項所述之電磁裝置,其中:該第三區包含自該第四區向外延伸且與該第四區成一體及單片式之複數個突出部。Aspect 16. The electromagnetic device according to any one of aspects 14 to 15, wherein: the third area includes a plurality of pieces that extend outward from the fourth area and are integrated with the fourth area and are monolithic Protrusion.
態樣17. 如態樣16所述之電磁裝置,其中:當在一x-y平面剖面中觀察時,與該第四區成單片式之該等突出部其中之每一者具有一剖面整體長度L2及一剖面整體寬度W2,其中L2及W2各自小於λ,其中λ係為當該電磁裝置受到電磁激發時該電磁裝置之一操作波長。Aspect 17. The electromagnetic device according to aspect 16, wherein: when viewed in an xy plane cross-section, each of the protruding portions monolithic with the fourth region has an overall length of the cross-section L2 and a cross-sectional overall width W2, where L2 and W2 are each smaller than λ, where λ is an operating wavelength of the electromagnetic device when the electromagnetic device is electromagnetically excited.
態樣18. 如態樣17所述之電磁裝置,其中:L2及W2各自小於λ/4。Aspect 18. The electromagnetic device according to aspect 17, wherein: L2 and W2 are each smaller than λ/4.
態樣19. 如態樣16至18中任一項所述之電磁裝置,其中:當在一x-y平面剖面中觀察時,與該第四區成單片式之該等突出部其中之每一者具有自寬至窄向外呈錐形之一剖面形狀。Aspect 19. The electromagnetic device according to any one of aspects 16 to 18, wherein: when viewed in an xy plane cross-section, each of the protrusions is monolithic with the fourth region It has a cross-sectional shape that is tapered from wide to narrow.
態樣20. 如態樣14至19中任一項所述之電磁裝置,其中:該第四區與該第二區成一體及單片式,且該第四平均介電常數等於該第二平均介電常數。Aspect 20. The electromagnetic device according to any one of aspects 14 to 19, wherein: the fourth zone and the second zone are integrated and monolithic, and the fourth average dielectric constant is equal to the second Average dielectric constant.
態樣21. 如態樣20所述之電磁裝置,其中:該第三區包含在該第二區與該第四區之間跨越該第三區延伸之複數個橋區段(bridge section),該等橋區段與該第二區及該第四區成一體及單片式。Aspect 21. The electromagnetic device according to aspect 20, wherein: the third zone includes a plurality of bridge sections extending across the third zone between the second zone and the fourth zone, The bridge sections are integrated and monolithic with the second zone and the fourth zone.
態樣22. 如態樣21所述之電磁裝置,其中:當在一x-y平面剖面中觀察時,該等橋區段其中之每一者具有一剖面整體長度L3及一剖面整體寬度W3,其中L3及W3各自小於λ,其中λ係為當該電磁裝置受到電磁激發時該電磁裝置之一操作波長。Aspect 22. The electromagnetic device according to aspect 21, wherein: when viewed in an xy plane cross-section, each of the bridge sections has a cross-sectional overall length L3 and a cross-sectional overall width W3, wherein L3 and W3 are each smaller than λ, where λ is an operating wavelength of the electromagnetic device when the electromagnetic device is electromagnetically excited.
態樣23. 如態樣22之電磁裝置,其中:L3及W3各自小於λ/4。Aspect 23. The electromagnetic device as in aspect 22, wherein: L3 and W3 are each smaller than λ/4.
態樣24. 如態樣1至23中任一項所述之電磁裝置,其中:該三維本體之該第二區包含具有複數個紋理特徵之一紋理化外表面,該等紋理特徵在任何方向上具有小於λ之整體尺寸,其中λ係為當該電磁裝置受到電磁激發時該電磁裝置之一操作波長。Aspect 24. The electromagnetic device according to any one of
態樣25. 如態樣1至24中任一項所述之電磁裝置,其中:該三維本體之至少該第二區之所有暴露表面自該三維本體之該近端至該遠端向內傾斜(draft)。Aspect 25. The electromagnetic device according to any one of
態樣26. 如態樣1至25中任一項所述之電磁裝置,更包含:一基底基板(base substrate),具有一訊號饋源(signal feed),該訊號饋源用以將該三維本體電磁激發成向遠場中輻射一電磁場;其中該三維本體在該基底基板上相對於該訊號饋源設置成使得當該訊號饋源上存在一特定電性訊號時,該三維本體在中心處受到電磁激發。Aspect 26. The electromagnetic device according to any one of
態樣101. 一種電磁(EM)裝置,包含:一三維(3D)本體,由一介電材料製成,具有一近端及一遠端;該三維本體具有一第一部分,該第一部分由具有一第一平均介電常數的除空氣外之一介電材料製成,該第一部分自該三維本體之該近端且僅部分地朝向該遠端延伸,該第一部分形成該三維本體之一內部分;該三維本體具有一第二部分,該第二部分由具有小於該第一平均介電常數之一第二平均介電常數的除空氣外之一介電材料製成,該第二部分自該三維本體之該近端延伸至該遠端,該第二部分形成該三維本體的包封該內部分之一外部分;該第一部分具有一第一內區,該第一內區具有小於該第一平均介電常數之一第三平均介電常數;且該第二部分具有一第二內區,該第二內區具有小於該第二平均介電常數之一第四平均介電常數,該第二內區係為該第一內區之一延伸部。Aspect 101. An electromagnetic (EM) device, comprising: a three-dimensional (3D) body, made of a dielectric material, having a proximal end and a distal end; the three-dimensional body has a first part, the first part is made of Made of a dielectric material other than air with a first average dielectric constant, the first part extends from the proximal end of the three-dimensional body and only partially toward the distal end, and the first part forms an inner part of the three-dimensional body Part; the three-dimensional body has a second part, the second part is made of a dielectric material other than air having a second average dielectric constant less than the first average dielectric constant, the second part from The proximal end of the three-dimensional body extends to the distal end, the second part forms an outer part of the three-dimensional body that encloses the inner part; the first part has a first inner zone, and the first inner zone has a smaller The first average dielectric constant is a third average dielectric constant; and the second portion has a second inner region, and the second inner region has a fourth average dielectric constant that is less than the second average dielectric constant, The second inner zone is an extension of the first inner zone.
態樣102. 如態樣101所述之電磁裝置,其中:該第二部分具有靠近該第二內區之一截頭圓錐形表面(frustoconical surface)。Aspect 102. The electromagnetic device of aspect 101, wherein: the second portion has a frustoconical surface close to the second inner region.
態樣103. 如態樣101至102中任一項所述之電磁裝置,其中:該第三平均介電常數等於該第四平均介電常數。Aspect 103. The electromagnetic device according to any one of aspects 101 to 102, wherein: the third average dielectric constant is equal to the fourth average dielectric constant.
態樣104. 如態樣101至103中任一項所述之電磁裝置,其中:該第一內區及該第二內區各自包含空氣。Aspect 104. The electromagnetic device of any one of aspects 101 to 103, wherein: the first inner zone and the second inner zone each contain air.
態樣105. 如態樣101至104中任一項所述之電磁裝置,其中:該第一內區及該第二內區至少其中之一包含除空氣外之一介電材料。Aspect 105. The electromagnetic device according to any one of aspects 101 to 104, wherein: at least one of the first inner region and the second inner region includes a dielectric material other than air.
態樣106. 如態樣101至105中任一項所述之電磁裝置,其中:該第三平均介電常數及該第四平均介電常數皆小於該第一平均介電常數及該第二平均介電常數其中之每一者。Aspect 106. The electromagnetic device of any one of aspects 101 to 105, wherein: the third average dielectric constant and the fourth average dielectric constant are both smaller than the first average dielectric constant and the second Each of the average dielectric constants.
態樣107. 如態樣101至102中任一項所述之電磁裝置,其中:該第四平均介電常數小於該第三平均介電常數。Aspect 107. The electromagnetic device according to any one of aspects 101 to 102, wherein: the fourth average dielectric constant is less than the third average dielectric constant.
態樣108. 如態樣101至107中任一項所述之電磁裝置,其中:該第一部分具有一整體高度H1;該第二部分具有一整體高度H2;且H1小於H2之約70%。Aspect 108. The electromagnetic device of any one of aspects 101 to 107, wherein: the first part has an overall height H1; the second part has an overall height H2; and H1 is less than about 70% of H2.
態樣109. 如態樣108所述之電磁裝置,其中:H1係為H2之約50%。Aspect 109. The electromagnetic device according to aspect 108, wherein: H1 is about 50% of H2.
態樣110. 如態樣101至109中任一項所述之電磁裝置,其中:該三維本體關於一中心z軸具有軸向對稱性(axial symmetry)。Aspect 110. The electromagnetic device according to any one of aspects 101 to 109, wherein: the three-dimensional body has axial symmetry about a central z-axis.
態樣111. 如態樣101至110中任一項所述之電磁裝置,其中:當在一x-y平面剖面中觀察時,該第一部分及該第二部分各自具有為圓形之一外剖面形狀。Aspect 111. The electromagnetic device according to any one of aspects 101 to 110, wherein: when viewed in an xy plane cross-section, the first part and the second part each have an outer cross-sectional shape that is circular .
態樣112. 如態樣101至111中任一項所述之電磁裝置,其中:當在一x-y平面剖面中觀察時,該第一部分及該第二部分各自具有為圓形之一內剖面形狀。Aspect 112. The electromagnetic device according to any one of aspects 101 to 111, wherein: when viewed in an xy plane cross-section, the first part and the second part each have an inner cross-sectional shape that is circular .
態樣113. 如態樣101至112中任一項所述之電磁裝置,其中:該第一內區及該第二內區各自相對於中心z軸居中設置。Aspect 113. The electromagnetic device according to any one of aspects 101 to 112, wherein: the first inner zone and the second inner zone are respectively centered relative to the central z-axis.
態樣114. 如態樣101至113中任一項所述之電磁裝置,其中:當在一x-y平面剖面中觀察時,該第一部分具有一整體外剖面尺寸D1;當在一x-y平面剖面中觀察時,該第二部分具有一整體外剖面尺寸D2;且D1小於D2。Aspect 114. The electromagnetic device of any one of aspects 101 to 113, wherein: when viewed in an xy plane cross-section, the first part has an overall outer cross-sectional dimension D1; when viewed in an xy plane cross-section When observed, the second part has an overall outer cross-sectional dimension D2; and D1 is smaller than D2.
態樣115. 如態樣114所述之電磁裝置,其中:D1小於D2之約70%。Aspect 115. The electromagnetic device of aspect 114, wherein: D1 is less than about 70% of D2.
態樣116. 如態樣115所述之電磁裝置,其中:D1係為D2之約60%。Aspect 116. The electromagnetic device according to aspect 115, wherein: D1 is about 60% of D2.
態樣117. 如態樣101至116中任一項所述之電磁裝置,其中:該第一平均介電常數等於或大於10且等於或小於20;且該第二平均介電常數等於或大於4且等於或小於9。Aspect 117. The electromagnetic device according to any one of aspects 101 to 116, wherein: the first average dielectric constant is equal to or greater than 10 and equal to or less than 20; and the second average dielectric constant is equal to or greater than 4 and equal to or less than 9.
態樣118. 如態樣101至117中任一項所述之電磁裝置,其中:該三維本體之所有暴露表面自該三維本體之該近端至該遠端向內傾斜。Aspect 118. The electromagnetic device according to any one of aspects 101 to 117, wherein: all exposed surfaces of the three-dimensional body are inclined inwardly from the proximal end to the distal end of the three-dimensional body.
態樣119. 如態樣至101至118中任一項所述之電磁裝置,更包含:一基底基板,具有一訊號饋源,該訊號饋源用以將該三維本體電磁激發成向遠場中輻射一電磁場;其中該三維本體在該基底基板上相對於該訊號饋源設置成使得當該訊號饋源上存在一特定電性訊號時,該三維本體在中心處受到電磁激發。Aspect 119. The electromagnetic device according to any one of aspects 101 to 118, further comprising: a base substrate with a signal feed source for electromagnetically exciting the three-dimensional body into a far field An electromagnetic field is radiated; wherein the three-dimensional body is arranged on the base substrate relative to the signal feed so that when a specific electrical signal exists on the signal feed, the three-dimensional body is electromagnetically excited at the center.
態樣201. 如態樣1所述之電磁裝置,其中:該第一區自該三維本體之該遠端且僅部分地朝向該近端延伸;且該第二區從屬於該第一區。Aspect 201. The electromagnetic device according to
態樣202. 如態樣201所述之電磁裝置,其中:該第一區之該介電材料包含空氣。Aspect 202. The electromagnetic device of aspect 201, wherein: the dielectric material of the first region contains air.
態樣203. 如態樣201至202中任一項所述之電磁裝置,其中:該第一區之該介電材料包含除空氣外之一介電材料。Aspect 203. The electromagnetic device according to any one of aspects 201 to 202, wherein: the dielectric material of the first region includes a dielectric material other than air.
態樣204. 如態樣201至203中任一項所述之電磁裝置,其中:該第一區係為形成於該第二區中之一凹部。Aspect 204. The electromagnetic device according to any one of aspects 201 to 203, wherein: the first region is a recess formed in the second region.
態樣205. 如態樣204所述之電磁裝置,其中:該凹部延伸達介於自該三維本體之該遠端至該近端之距離之約30%與約90%間之任何量。Aspect 205. The electromagnetic device of aspect 204, wherein: the recess extends to any amount between about 30% and about 90% of the distance from the distal end to the proximal end of the three-dimensional body.
態樣206. 如態樣201至205中任一項所述之電磁裝置,其中:當在一x-y平面剖面中觀察時,該第一區具有一整體外剖面尺寸D1;當在一x-y平面剖面中觀察時,該第二區具有一整體外剖面尺寸D2;且D1小於D2。Aspect 206. The electromagnetic device according to any one of aspects 201 to 205, wherein: when viewed in an xy plane cross-section, the first region has an overall outer cross-sectional dimension D1; when viewed in an xy plane cross-section When viewed in the middle, the second area has an overall outer cross-sectional dimension D2; and D1 is smaller than D2.
態樣207. 如態樣206所述之電磁裝置,其中:當在一x-y平面剖面中觀察時,該第二區具有為圓形之一外剖面形狀。Aspect 207. The electromagnetic device according to aspect 206, wherein: when viewed in an x-y plane cross-section, the second region has an outer cross-sectional shape that is circular.
態樣208. 如態樣207所述之電磁裝置,其中:當在一x-y平面剖面中觀察時,該第二區具有為圓形之一內剖面形狀。Aspect 208. The electromagnetic device of aspect 207, wherein: when viewed in an x-y plane cross-section, the second region has an inner cross-sectional shape that is circular.
態樣209. 如態樣206至208中任一項所述之電磁裝置,其中:D1及D2係為該第一區及該第二區之對應直徑。Aspect 209. The electromagnetic device according to any one of aspects 206 to 208, wherein: D1 and D2 are the corresponding diameters of the first zone and the second zone.
態樣210. 如態樣201至209中任一項所述之電磁裝置,其中:當在一x-z平面剖面中觀察時,該第一區具有一第一剖面輪廓P1A;當在一y-z平面剖面中觀察時,該第一區具有一第二剖面輪廓P1B;且P1B不同於P1A。Aspect 210. The electromagnetic device of any one of aspects 201 to 209, wherein: when viewed in an xz plane cross-section, the first region has a first cross-sectional profile P1A; when viewed in a yz plane cross-section When viewed in the middle, the first area has a second cross-sectional profile P1B; and P1B is different from P1A.
態樣211. 如態樣201至209中任一項所述之電磁裝置,其中:當在一x-z平面剖面中觀察時,該第一區具有一第一剖面輪廓P1A;當在一y-z平面剖面中觀察時,該第一區具有一第二剖面輪廓P1B;且P1B與P1A相同。Aspect 211. The electromagnetic device according to any one of aspects 201 to 209, wherein: when viewed in an xz plane cross-section, the first region has a first cross-sectional profile P1A; when viewed in a yz plane cross-section When viewed in the middle, the first area has a second cross-sectional profile P1B; and P1B is the same as P1A.
態樣212. 如態樣201至211中任一項所述之電磁裝置,其中:該三維本體之外側壁相對於一中心z軸係為垂直的。Aspect 212. The electromagnetic device according to any one of aspects 201 to 211, wherein: the outer side wall of the three-dimensional body is perpendicular to a central z-axis system.
態樣213. 如態樣201至211中任一項所述之電磁裝置,其中:該三維本體之外側壁相對於一中心z軸係為凸形的(convex)。Aspect 213. The electromagnetic device according to any one of aspects 201 to 211, wherein: the outer side wall of the three-dimensional body is convex with respect to a central z-axis system.
態樣214. 如態樣201至211中任一項所述之電磁裝置,其中:該三維本體之外側壁相對於一中心z軸係為凹形的(concave)。Aspect 214. The electromagnetic device according to any one of aspects 201 to 211, wherein: the outer side wall of the three-dimensional body is concave with respect to a central z-axis system.
態樣215. 如態樣201至214中任一項所述之電磁裝置,其中:當在一x-z平面剖面中觀察時,該第二區具有一第一外剖面輪廓P2A;當在一y-z平面剖面中觀察時,該第二區具有一第二外剖面輪廓P2B;且P2B與P2A相同。Aspect 215. The electromagnetic device according to any one of aspects 201 to 214, wherein: when viewed in an xz plane cross-section, the second region has a first outer cross-sectional profile P2A; when viewed in a yz plane When viewed in cross-section, the second area has a second outer cross-sectional profile P2B; and P2B is the same as P2A.
態樣216. 如態樣201至214中任一項所述之電磁裝置,其中:當在一x-z平面剖面中觀察時,該第二區具有一第一外剖面輪廓P2A;當在一y-z平面剖面中觀察時,該第二區具有一第二外剖面輪廓P2B;且P2B不同於P2A。Aspect 216. The electromagnetic device according to any one of aspects 201 to 214, wherein: when viewed in an xz plane cross-section, the second region has a first outer cross-sectional profile P2A; when viewed in a yz plane When viewed in the cross section, the second area has a second outer cross-sectional profile P2B; and P2B is different from P2A.
態樣217. 如態樣201至216中任一項所述之電磁裝置,更包含:一第三區,由具有一第三平均介電常數之一介電材料製成,該第三區自該三維本體之該近端至至少該遠端包封該三維本體之至少各側,該第三平均介電常數小於該第二平均介電常數且大於空氣介電常數。Aspect 217. The electromagnetic device according to any one of aspects 201 to 216, further comprising: a third region made of a dielectric material having a third average dielectric constant, the third region being The proximal end to at least the distal end of the three-dimensional body enclose at least each side of the three-dimensional body, and the third average dielectric constant is less than the second average dielectric constant and greater than the dielectric constant of air.
態樣218. 如態樣217所述之電磁裝置,其中:該第三區延伸超出該三維本體之該遠端。Aspect 218. The electromagnetic device of aspect 217, wherein: the third region extends beyond the distal end of the three-dimensional body.
態樣219. 如態樣217至218中任一項所述之電磁裝置,其中:該第一區之該介電材料包含該第三區之該介電材料。Aspect 219. The electromagnetic device according to any one of aspects 217 to 218, wherein: the dielectric material of the first region includes the dielectric material of the third region.
態樣220. 如態樣201至219中任一項所述之電磁裝置,更包含:一基底基板,具有一訊號饋源,該訊號饋源用以將該三維本體電磁激發成向遠場中輻射一電磁場;其中該三維本體在該基底基板上相對於該訊號饋源設置成使得當該訊號饋源上存在一特定電性訊號時,該三維本體在中心處受到電磁激發。Aspect 220. The electromagnetic device according to any one of aspects 201 to 219, further comprising: a base substrate having a signal feed for electromagnetically exciting the three-dimensional body into a far field An electromagnetic field is radiated; wherein the three-dimensional body is arranged on the base substrate relative to the signal feed so that when a specific electrical signal exists on the signal feed, the three-dimensional body is electromagnetically excited at the center.
態樣221. 一種由如態樣201至216中任一項所述之電磁裝置形成之陣列,在一操作頻率及相關聯之波長下運行,其中:該陣列包含複數個該電磁裝置,該等電磁裝置其中之每一電磁裝置藉由一相對薄之連接結構實體連接至該等電磁裝置其中之至少一個其他電磁裝置以形成一相連陣列,各該連接結構與該等電磁裝置其中之一的一整體外尺寸相較係為相對薄的,各該連接結構具有一剖面整體高度H3且係由該第二區之該介電材料形成,該剖面整體高度H3小於該等電磁裝置其中之一相應相連電磁裝置之一整體高度H4之20%,各該連接結構及相關聯之該電磁裝置形成該相連陣列之一單個單片式部分。Aspect 221. An array formed by the electromagnetic device according to any one of aspects 201 to 216, operating at an operating frequency and associated wavelength, wherein: the array includes a plurality of the electromagnetic devices, the Each of the electromagnetic devices is physically connected to at least one of the electromagnetic devices by a relatively thin connection structure to form a connected array, and each connection structure is connected to one of the electromagnetic devices. The overall outer dimension is relatively thin. Each of the connecting structures has an overall cross-sectional height H3 and is formed by the dielectric material of the second region, and the overall cross-sectional height H3 is smaller than the corresponding one of the electromagnetic devices connected An electromagnetic device is 20% of the overall height H4, and each of the connecting structures and the associated electromagnetic devices form a single monolithic part of the connected array.
態樣222. 如態樣221所述之陣列,更包含:一基底基板,其中該陣列設置於該基底基板上。Aspect 222. The array according to aspect 221, further comprising: a base substrate, wherein the array is disposed on the base substrate.
態樣223. 如態樣222所述之陣列,其中該連接結構更包含:至少一個支腳(leg),與該連接結構一體地形成且成單片式,該至少一個支腳自該連接結構向下延伸至該基底基板。Aspect 223. The array according to aspect 222, wherein the connection structure further comprises: at least one leg (leg) formed integrally with the connection structure and monolithic, the at least one leg is from the connection structure Extend down to the base substrate.
態樣224. 如態樣223所述之陣列,其中:該第二區包含一第一部分,該第一部分靠近該三維本體之該近端;以及一第二部分,靠近該三維本體之該遠端。Aspect 224. The array according to aspect 223, wherein: the second region comprises a first portion, the first portion being close to the proximal end of the three-dimensional body; and a second portion, being close to the distal end of the three-dimensional body .
態樣225. 如態樣224所述之陣列,其中:該第二部分緊靠且接觸該第一部分。Aspect 225. The array of aspect 224, wherein: the second part abuts and contacts the first part.
態樣226. 如態樣224所述之陣列,其中:該第二部分靠近該第一部分,而在該第二部分與該第一部分之間具有為該第二平均介電常數之一材料間隙。Aspect 226. The array according to aspect 224, wherein: the second part is close to the first part, and there is a material gap that is the second average dielectric constant between the second part and the first part.
態樣227. 如態樣224至226中任一項所述之陣列,更包含:一第三區,由具有一第三平均介電常數之一介電材料製成,該第三區自該三維本體之該近端至至少該遠端包封該三維本體之至少各側,該第三平均介電常數小於該第二平均介電常數且大於空氣介電常數。Aspect 227. The array according to any one of aspects 224 to 226, further comprising: a third region made of a dielectric material having a third average dielectric constant, the third region being The proximal end to at least the distal end of the three-dimensional body enclose at least each side of the three-dimensional body, and the third average dielectric constant is less than the second average dielectric constant and greater than the dielectric constant of air.
態樣228. 如態樣227所述之陣列,其中:該第三區在該陣列之該等電磁裝置其中之相鄰電磁裝置之間延伸。Aspect 228. The array of aspect 227, wherein: the third area extends between adjacent ones of the electromagnetic devices in the array.
態樣229. 如態樣227至228中任一項所述之陣列,其中:該第三區在該陣列之該等電磁裝置中對應電磁裝置之該等第一部分其中之相鄰第一部分之間延伸;且該第三區不在該陣列之該等電磁裝置中對應電磁裝置之該等第二部分其中之相鄰第二部分之間延伸。Aspect 229. The array according to any one of aspects 227 to 228, wherein: the third area is between adjacent first portions of the first portions of the electromagnetic devices corresponding to the electromagnetic devices in the array Extending; and the third region does not extend between adjacent second portions of the second portions of the electromagnetic devices corresponding to the electromagnetic devices in the array.
態樣230. 如態樣227至229中任一項所述之陣列,其中:該第二部分靠近該第一部分,而在該第二部分與該第一部分之間具有為該第二平均介電常數之一材料間隙。Aspect 230. The array according to any one of aspects 227 to 229, wherein: the second part is close to the first part, and there is a second average dielectric between the second part and the first part One of the constant material gaps.
態樣231. 如態樣230所述之陣列,其中:為該第二平均介電常數之該材料間隙包含空氣。Aspect 231. The array of aspect 230, wherein: the material gap that is the second average dielectric constant contains air.
態樣232. 如態樣230所述之陣列,其中:為該第二平均介電常數之該材料間隙包含具有該第三平均介電常數之該介電材料。Aspect 232. The array of aspect 230, wherein: the material gap that is the second average dielectric constant includes the dielectric material having the third average dielectric constant.
態樣233. 如態樣222至232中任一項所述之陣列,其中:該基底基板包含複數個訊號饋源,該等訊號饋源其中之每一訊號饋源用以將該等電磁裝置其中之一對應電磁裝置電磁激發成向遠場中輻射一電磁場;其中該等電磁裝置其中之一給定電磁裝置在該基底基板上相對於該等訊號饋源其中之一對應訊號饋源設置成使得當該對應訊號饋源上存在一特定電性訊號時,該給定電磁裝置在中心處受到電磁激發。Aspect 233. The array according to any one of aspects 222 to 232, wherein: the base substrate includes a plurality of signal feeds, and each of the signal feeds is used for the electromagnetic device One of the corresponding electromagnetic devices is electromagnetically excited to radiate an electromagnetic field into the far field; wherein a given electromagnetic device of one of the electromagnetic devices is arranged on the base substrate relative to one of the signal feeds corresponding to the signal feed Therefore, when a specific electrical signal exists on the corresponding signal feed, the given electromagnetic device is electromagnetically excited at the center.
態樣301. 如態樣1所述之電磁裝置,其中:該第一區自一第一基底結構(first base structure)至少部分地延伸至該三維本體之該遠端,該第一基底結構靠近該三維本體之該近端;該第二區自該三維本體之該近端至少部分地延伸至該三維本體之該遠端;該三維本體更具有在該第二區外側之一第三區,該第三區由具有小於該第二平均介電常數之一第三平均介電常數之一介電材料製成,該第三區自一第二基底結構延伸至該三維本體之該遠端,該第二基底結構靠近該三維本體之該近端;且該三維本體更具有在該第三區外側之一第四區,該第四區由具有大於該第三平均介電常數之一第四平均介電常數之一介電材料製成,該第四區自該三維本體之該近端延伸至該三維本體之該遠端。Aspect 301. The electromagnetic device according to
態樣302. 如態樣301所述之電磁裝置,其中:該第一區之該第一基底結構具有一厚度H7,且與該第二區一體地形成並成單片式。Aspect 302. The electromagnetic device according to aspect 301, wherein: the first base structure of the first region has a thickness H7, and is integrally formed with the second region and is monolithic.
態樣303. 如態樣302所述之電磁裝置,其中:H7等於或小於0.015英吋(inch)。Aspect 303. The electromagnetic device according to aspect 302, wherein: H7 is equal to or less than 0.015 inch (inch).
態樣304. 如態樣301至303中任一項所述之電磁裝置,其中:該第一區相對於一中心z軸居中設置於該三維本體內。Aspect 304. The electromagnetic device according to any one of aspects 301 to 303, wherein: the first region is centrally arranged in the three-dimensional body with respect to a central z-axis.
態樣305. 如態樣301至304中任一項所述之電磁裝置,其中:該第三區係為該第一區之一連續體(continuum);且該第一區及該第三區其中之每一者包含空氣。Aspect 305. The electromagnetic device according to any one of aspects 301 to 304, wherein: the third zone is a continuum of the first zone; and the first zone and the third zone Each of them contains air.
態樣306. 如態樣301至305中任一項所述之電磁裝置,其中:該第三區係為該第一區之一連續體;且該第一區及該第三區至少其中之一包含除空氣外之一介電材料。Aspect 306. The electromagnetic device according to any one of aspects 301 to 305, wherein: the third zone is a continuum of the first zone; and at least one of the first zone and the third zone One contains a dielectric material other than air.
態樣307. 如態樣305所述之電磁裝置,其中:該第三區包含與該第一區之該介電材料不同之一介電材料。Aspect 307. The electromagnetic device according to aspect 305, wherein: the third region includes a dielectric material different from the dielectric material of the first region.
態樣308. 如態樣307所述之電磁裝置,其中:該第三區之該介電材料具有較該第一區之該介電材料之該介電常數小之一介電常數。Aspect 308. The electromagnetic device according to aspect 307, wherein: the dielectric material of the third region has a dielectric constant that is smaller than the dielectric constant of the dielectric material of the first region.
態樣309. 如態樣301至308中任一項所述之電磁裝置,其中:該第四區係為該第二區之一連續體,俾使該第二區及該第四區彼此一體地形成以形成一單片體(monolithic);且該第四平均介電常數等於該第二平均介電常數。Aspect 309. The electromagnetic device according to any one of aspects 301 to 308, wherein: the fourth zone is a continuum of the second zone, so that the second zone and the fourth zone are integrated with each other The ground is formed to form a monolithic body; and the fourth average dielectric constant is equal to the second average dielectric constant.
態樣310. 如態樣301至309中任一項所述之電磁裝置,更包含:一相對薄之連接結構,設置於該三維本體之該近端處且與該第二區及該第四區一體地形成並橋接於該第二區與該第四區之間,俾使該第二區、該第四區及該相對薄之連接結構形成一單片體,該相對薄之連接結構具一整體高度H5,該整體高度H5小於該三維本體之一整體高度H6之20%。Aspect 310. The electromagnetic device according to any one of aspects 301 to 309, further comprising: a relatively thin connection structure disposed at the proximal end of the three-dimensional body and connected to the second region and the fourth The area is integrally formed and bridged between the second area and the fourth area, so that the second area, the fourth area and the relatively thin connection structure form a monolithic body, and the relatively thin connection structure has An overall height H5, the overall height H5 is less than 20% of the overall height H6 of the three-dimensional body.
態樣311. 如態樣310所述之電磁裝置,其中:該第二基底結構具有小於H5之一厚度H8。Aspect 311. The electromagnetic device according to aspect 310, wherein: the second base structure has a thickness H8 that is less than H5.
態樣312. 如態樣311所述之電磁裝置,其中:H8等於或小於0.005英吋。Aspect 312. The electromagnetic device according to aspect 311, wherein: H8 is equal to or less than 0.005 inches.
態樣313. 如態樣301至312中任一項所述之電磁裝置,其中:該第一區係為形成於該第二區中之一凹部。Aspect 313. The electromagnetic device according to any one of aspects 301 to 312, wherein: the first region is a recess formed in the second region.
態樣314. 如態樣313所述之電磁裝置,其中:該凹部延伸達介於自該第二區之一遠端至該三維本體之該近端之距離之約30%與約95%間之任何量。Aspect 314. The electromagnetic device of aspect 313, wherein: the recess extends between about 30% and about 95% of a distance from a distal end of the second region to the proximal end of the three-dimensional body Of any amount.
態樣315. 如態樣301至314中任一項所述之電磁裝置,其中:該第二區及該第一區具有共有之中心z軸;該第三區及該第二區具有共有之中心z軸;且該第四區及該第三區具有共有之中心z軸。Aspect 315. The electromagnetic device according to any one of aspects 301 to 314, wherein: the second zone and the first zone have a common central z-axis; the third zone and the second zone have a common The central z-axis; and the fourth zone and the third zone have a common central z-axis.
態樣316. 如態樣301至315中任一項所述之電磁裝置,其中:該第二區完全環繞該第一區;該第三區完全環繞該第二區;且該第四區完全環繞該第三區。Aspect 316. The electromagnetic device of any one of aspects 301 to 315, wherein: the second zone completely surrounds the first zone; the third zone completely surrounds the second zone; and the fourth zone completely Surround the third zone.
態樣317. 如態樣301至316中任一項所述之電磁裝置,其中:當在一x-y平面剖面中觀察時,該第二區及該第四區各自具有為圓形之一外剖面形狀。Aspect 317. The electromagnetic device according to any one of aspects 301 to 316, wherein: when viewed in an xy plane cross-section, the second zone and the fourth zone each have an outer cross-section that is circular shape.
態樣318. 如態樣301至317中任一項所述之電磁裝置,其中:當在一x-y平面剖面中觀察時,該第二區及該第四區各自具有為圓形之一內剖面形狀。Aspect 318. The electromagnetic device according to any one of aspects 301 to 317, wherein: when viewed in an xy plane cross-section, each of the second zone and the fourth zone has a circular inner cross-section shape.
態樣319. 如態樣301至318中任一項所述之電磁裝置,其中:該三維本體之至少該第二區及該第四區之所有暴露表面自該三維本體之該近端朝向該遠端向內傾斜。Aspect 319. The electromagnetic device according to any one of aspects 301 to 318, wherein: all exposed surfaces of at least the second zone and the fourth zone of the three-dimensional body face from the proximal end of the three-dimensional body toward the The distal end is inclined inward.
態樣320. 如態樣301至319中任一項所述之電磁裝置,更包含:一基底基板,具有一訊號饋源,該訊號饋源用以將該三維本體電磁激發成向遠場中輻射一電磁場;其中該三維本體在該基底基板上相對於該訊號饋源設置成使得當該訊號饋源上存在一特定電性訊號時,該三維本體在中心處受到電磁激發。Aspect 320. The electromagnetic device according to any one of aspects 301 to 319, further comprising: a base substrate having a signal feed source for electromagnetically exciting the three-dimensional body into a far field An electromagnetic field is radiated; wherein the three-dimensional body is arranged on the base substrate relative to the signal feed so that when a specific electrical signal exists on the signal feed, the three-dimensional body is electromagnetically excited at the center.
態樣321. 一種由如態樣301至319中任一項所述之電磁裝置形成之陣列,其中:該陣列包含設置於一基底基板上之複數個該電磁裝置;該基底基板包含複數個訊號饋源,其中該等訊號饋源其中之每一訊號饋源用以將該等電磁裝置其中之一對應電磁裝置電磁激發成向遠場中輻射一電磁場;其中該等電磁裝置其中之一給定電磁裝置在該基底基板上相對於該等訊號饋源其中之一對應訊號饋源設置成使得當該對應訊號饋源上存在一特定電性訊號時,該給定電磁裝置在中心處受到電磁激發。Aspect 321. An array formed by the electromagnetic device according to any one of aspects 301 to 319, wherein: the array includes a plurality of the electromagnetic devices disposed on a base substrate; the base substrate includes a plurality of signals A feed, wherein each of the signal feeds is used to electromagnetically excite one of the electromagnetic devices corresponding to the electromagnetic device to radiate an electromagnetic field into the far field; wherein one of the electromagnetic devices is given The electromagnetic device is arranged on the base substrate relative to one of the signal feeds corresponding to the signal feed so that when a specific electrical signal exists on the corresponding signal feed, the given electromagnetic device is electromagnetically excited at the center .
態樣401. 如態樣1所述之電磁裝置,其中:該第一區自一第一基底結構至少部分地延伸至該三維本體之該遠端,該第一基底結構靠近該三維本體之該近端;該第二區自該三維本體之該近端至少部分地延伸至該三維本體之該遠端;該三維本體更具有在該第二區外側之一第三區,該第三區由具有小於該第二平均介電常數之一第三平均介電常數之一介電材料製成,該第三區自一第二基底結構延伸至該三維本體之該遠端,該第二基底結構靠近該三維本體之該近端;該三維本體更具有在該第三區外側之一第四區,該第四區由具有大於該第三平均介電常數之一第四平均介電常數之一介電材料製成,該第四區自該三維本體之該近端延伸至該三維本體之該遠端;其中該第二基底結構包含設置於該三維本體之該近端處之一相對薄之連接結構,該相對薄之連接結構與該第二區及該第四區一體地形成並橋接於該第二區與該第四區之間,俾使該第二區、該第四區及該相對薄之連接結構彼此一體地形成以形成一單片體,該相對薄之連接結構具有一整體高度H5,該整體高度H5小於該三維本體之一整體高度H6之30%;且其中除該相對薄之連接結構之外,該第三區中之該第二基底結構不存在該單片體之介電材料。Aspect 401. The electromagnetic device according to aspect 1, wherein: the first region at least partially extends from a first base structure to the distal end of the three-dimensional body, and the first base structure is close to the three-dimensional body The proximal end; the second region at least partially extends from the proximal end of the three-dimensional body to the distal end of the three-dimensional body; the three-dimensional body further has a third region outside the second region, the third region being formed by Made of a dielectric material having a third average dielectric constant less than the second average dielectric constant, the third region extends from a second base structure to the distal end of the three-dimensional body, the second base structure Close to the proximal end of the three-dimensional body; the three-dimensional body further has a fourth zone outside the third zone, the fourth zone having a fourth average dielectric constant greater than the third average dielectric constant Made of dielectric material, the fourth area extends from the proximal end of the three-dimensional body to the distal end of the three-dimensional body; wherein the second base structure includes a relatively thin one disposed at the proximal end of the three-dimensional body A connection structure, the relatively thin connection structure is integrally formed with the second area and the fourth area and bridges between the second area and the fourth area, so that the second area, the fourth area and the fourth area The relatively thin connecting structures are integrally formed with each other to form a monolithic body, the relatively thin connecting structure has an overall height H5, the overall height H5 is less than 30% of the overall height H6 of the three-dimensional body; Except for the thin connection structure, the second base structure in the third region does not have the monolithic dielectric material.
態樣402. 如態樣401所述之電磁裝置,其中:該第一區之該第一基底結構具有一厚度H7,且與該第二區一體地形成並成單片式。Aspect 402. The electromagnetic device according to aspect 401, wherein: the first base structure of the first region has a thickness H7, and is integrally formed with the second region and is a single piece.
態樣403. 如態樣402所述之電磁裝置,其中:H7等於或小於0.015英吋。Aspect 403. The electromagnetic device according to aspect 402, wherein: H7 is equal to or less than 0.015 inches.
態樣404. 如態樣401至403中任一項所述之電磁裝置,其中:該相對薄之連接結構包含橋接於該第二區與該第四區間之至少二個臂。Aspect 404. The electromagnetic device according to any one of aspects 401 to 403, wherein: the relatively thin connection structure includes at least two arms bridging the second zone and the fourth zone.
態樣405. 如態樣401至404中任一項所述之電磁裝置,其中:該相對薄之連接結構具有一整體寬度W1,該整體寬度W1小於該第二區之一整體寬度W2。Aspect 405. The electromagnetic device of any one of aspects 401 to 404, wherein: the relatively thin connecting structure has an overall width W1 that is smaller than an overall width W2 of the second region.
態樣406. 如態樣401至405中任一項所述之電磁裝置,其中:該第一區相對於一中心z軸居中設置於該三維本體內。Aspect 406. The electromagnetic device according to any one of aspects 401 to 405, wherein: the first region is centrally disposed in the three-dimensional body with respect to a central z-axis.
態樣407. 如態樣401至406中任一項所述之電磁裝置,其中:該第三區係為該第一區之一連續體;且該第一區及該第三區其中之每一者包含空氣。Aspect 407. The electromagnetic device according to any one of aspects 401 to 406, wherein: the third zone is a continuum of the first zone; and each of the first zone and the third zone One contains air.
態樣408. 如態樣401至407中任一項所述之電磁裝置,其中:該第三區係為該第一區之一連續體;且該第一區及該第三區至少其中之一包含除空氣外之一介電材料。Aspect 408. The electromagnetic device according to any one of aspects 401 to 407, wherein: the third zone is a continuum of the first zone; and at least one of the first zone and the third zone One contains a dielectric material other than air.
態樣409. 如態樣408所述之電磁裝置,其中:該第三區包含與該第一區之該介電材料不同之一介電材料。Aspect 409. The electromagnetic device according to aspect 408, wherein: the third region includes a dielectric material different from the dielectric material of the first region.
態樣410. 如態樣409所述之電磁裝置,其中:該第三區之該介電材料具有較該第一區之該介電材料之該介電常數小之一介電常數。Aspect 410. The electromagnetic device according to aspect 409, wherein: the dielectric material of the third region has a dielectric constant which is smaller than the dielectric constant of the dielectric material of the first region.
態樣411. 如態樣401至410中任一項所述之電磁裝置,其中:該單片體具有等於該第二平均介電常數之一介電常數。Aspect 411. The electromagnetic device according to any one of aspects 401 to 410, wherein: the monolithic body has a dielectric constant equal to the second average dielectric constant.
態樣412. 如態樣401至411中任一項所述之電磁裝置,其中:該第一區係為形成於該第二區中之一凹部。Aspect 412. The electromagnetic device according to any one of aspects 401 to 411, wherein: the first region is a recess formed in the second region.
態樣413. 如態樣412所述之電磁裝置,其中:該凹部延伸達介於自該第二區之一遠端至該三維本體之該近端之距離之約30%與約95%間之任何量。Aspect 413. The electromagnetic device of aspect 412, wherein: the recess extends between about 30% and about 95% of a distance from a distal end of the second region to the proximal end of the three-dimensional body Of any amount.
態樣414. 如態樣401至413中任一項所述之電磁裝置,其中:該第二區及該第一區具有共有之中心z軸;該第三區及該第二區具有共有之中心z軸;且該第四區及該第三區具有共有之中心z軸。Aspect 414. The electromagnetic device according to any one of aspects 401 to 413, wherein: the second zone and the first zone have a common central z-axis; the third zone and the second zone have a common The central z-axis; and the fourth zone and the third zone have a common central z-axis.
態樣415. 如態樣401至414中任一項所述之電磁裝置,其中:該第二區完全環繞該第一區;該第三區完全環繞該第二區;且該第四區完全環繞該第三區。Aspect 415. The electromagnetic device according to any one of aspects 401 to 414, wherein: the second zone completely surrounds the first zone; the third zone completely surrounds the second zone; and the fourth zone completely Surround the third zone.
態樣416. 如態樣401至415中任一項所述之電磁裝置,其中:該第二區之至少一部分具有一凸形外表面。Aspect 416. The electromagnetic device according to any one of aspects 401 to 415, wherein: at least a portion of the second region has a convex outer surface.
態樣417. 如態樣401至416中任一項所述之電磁裝置,其中:當在一x-y平面剖面中觀察時,該第二區及該第四區各自具有為圓形之一外剖面形狀。Aspect 417. The electromagnetic device according to any one of aspects 401 to 416, wherein: when viewed in an xy plane cross-section, the second zone and the fourth zone each have an outer cross-section that is circular shape.
態樣418. 如態樣401至417中任一項所述之電磁裝置,其中:當在一x-y平面剖面中觀察時,該第二區及該第四區各自具有為圓形之一內剖面形狀。Aspect 418. The electromagnetic device according to any one of aspects 401 to 417, wherein: when viewed in an xy plane cross-section, the second zone and the fourth zone each have an inner cross-section that is circular shape.
態樣419. 如態樣401至418中任一項所述之電磁裝置,其中:該三維本體之至少該第二區及該第四區之所有暴露表面自該三維本體之該近端朝向該遠端向內傾斜。Aspect 419. The electromagnetic device according to any one of aspects 401 to 418, wherein: all exposed surfaces of at least the second zone and the fourth zone of the three-dimensional body face from the proximal end of the three-dimensional body toward the The distal end is inclined inward.
態樣420. 如態樣401至419中任一項所述之電磁裝置,更包含:一基底基板,具有一訊號饋源,該訊號饋源用以將該三維本體電磁激發成向遠場中輻射一電磁場;其中該三維本體在該基底基板上相對於該訊號饋源設置成使得當該訊號饋源上存在一特定電性訊號時,該三維本體在中心處受到電磁激發。Aspect 420. The electromagnetic device according to any one of aspects 401 to 419, further comprising: a base substrate having a signal feed source for electromagnetically exciting the three-dimensional body into a far field An electromagnetic field is radiated; wherein the three-dimensional body is arranged on the base substrate relative to the signal feed so that when a specific electrical signal exists on the signal feed, the three-dimensional body is electromagnetically excited at the center.
態樣421. 一種由如態樣401至419中任一項所述之電磁裝置形成之陣列,其中:該陣列包含設置於一基底基板上之複數個該電磁裝置;該基底基板包含複數個訊號饋源,該等訊號饋源其中之每一訊號饋源用以將該等電磁裝置其中之一對應電磁裝置電磁激發成向遠場中輻射一電磁場;其中該等電磁裝置其中之一給定電磁裝置在該基底基板上相對於該等訊號饋源其中之一對應訊號饋源設置成使得當該對應訊號饋源上存在一特定電性訊號時,該給定電磁裝置在中心處受到電磁激發。Aspect 421. An array formed by the electromagnetic device according to any one of aspects 401 to 419, wherein: the array includes a plurality of the electromagnetic devices disposed on a base substrate; the base substrate includes a plurality of signals Feeds, each of the signal feeds is used to electromagnetically excite one of the electromagnetic devices corresponding to the electromagnetic device to radiate an electromagnetic field into the far field; wherein one of the electromagnetic devices has a given electromagnetic field The device is arranged on the base substrate relative to a corresponding signal feed of one of the signal feeds so that when a specific electrical signal exists on the corresponding signal feed, the given electromagnetic device is electromagnetically excited at the center.
態樣501. 如態樣1所述之電磁裝置,更包含:一基底基板,包含第一複數個通路(via);其中該三維本體包含除空氣外之一介質,該三維本體之該近端在該基底基板上設置成使得該三維本體至少部分地或完全覆蓋該第一複數個通路;其中該第一複數個通路至少部分地填充有該三維本體之該介電材料,俾使該三維本體及該第一複數個通路之該介電材料形成一單片體。Aspect 501. The electromagnetic device according to
態樣502. 如態樣501所述之電磁裝置,其中:該三維本體完全覆蓋該第一複數個通路。Aspect 502. The electromagnetic device according to aspect 501, wherein: the three-dimensional body completely covers the first plurality of channels.
態樣503. 如態樣501至502中任一項所述之電磁裝置,其中:該第一複數個通路完全填充有該三維本體之該介電材料。Aspect 503. The electromagnetic device of any one of aspects 501 to 502, wherein: the first plurality of vias are completely filled with the dielectric material of the three-dimensional body.
態樣504. 如態樣501至503中任一項所述之電磁裝置,其中:該三維本體之該介電材料係為一可成型介電材料(moldable dielectric material)。Aspect 504. The electromagnetic device according to any one of aspects 501 to 503, wherein: the dielectric material of the three-dimensional body is a moldable dielectric material.
態樣505. 如態樣501至504中任一項所述之電磁裝置,其中:該基底基板更包含第二複數個通路,該第二複數個通路能夠由該三維本體完全覆蓋、由該三維本體部分地覆蓋或相對於該三維本體完全暴露出。Aspect 505. The electromagnetic device according to any one of aspects 501 to 504, wherein: the base substrate further comprises a second plurality of passages, and the second plurality of passages can be completely covered by the three-dimensional body and be covered by the three-dimensional body. The body partially covers or is completely exposed relative to the three-dimensional body.
態樣506. 如態樣505所述之電磁裝置,其中:由該三維本體完全或部分地覆蓋之該第二複數個通路至少部分地填充有該三維本體之該介電材料或者填充有一導電材料;且相對於該三維本體完全暴露出之該第二複數個通路填充有一導電材料。Aspect 506. The electromagnetic device of aspect 505, wherein: the second plurality of passages completely or partially covered by the three-dimensional body are at least partially filled with the dielectric material of the three-dimensional body or with a conductive material ; And the second plurality of vias completely exposed relative to the three-dimensional body is filled with a conductive material.
態樣507. 如態樣501至506中任一項所述之電磁裝置,其中:該基底基板更包含一訊號饋源,該訊號饋源用以當該訊號饋源上存在一特定電性訊號時將該三維本體電磁激發成向遠場中輻射一電磁場。Aspect 507. The electromagnetic device according to any one of aspects 501 to 506, wherein: the base substrate further includes a signal feed, and the signal feed is used when a specific electrical signal exists on the signal feed When the three-dimensional body is electromagnetically excited to radiate an electromagnetic field into the far field.
態樣508. 如態樣507所述之電磁裝置,其中:該三維本體在該基底基板上相對於該訊號饋源設置成使得當該訊號饋源上存在一特定電性訊號時,該三維本體在中心處受到電磁激發。Aspect 508. The electromagnetic device according to aspect 507, wherein: the three-dimensional body is disposed on the base substrate relative to the signal feed so that when a specific electrical signal exists on the signal feed, the three-dimensional body Electromagnetically excited at the center.
態樣509. 如態樣507至508中任一項所述之電磁裝置,其中:該訊號饋源包含一帶狀線(stripline)及一狹槽式開孔(slotted aperture),該狹槽式開孔由該三維本體完全覆蓋。Aspect 509. The electromagnetic device according to any one of aspects 507 to 508, wherein: the signal feed includes a stripline and a slotted aperture, the slotted aperture The opening is completely covered by the three-dimensional body.
態樣510. 如態樣509所述之電磁裝置,其中:該基底基板包含一導電下部層、一導電上部層及設置於該導電下部層與該導電上部層間之至少一個介電基板;且該三維本體之該近端設置於該上部層上。Aspect 510. The electromagnetic device according to aspect 509, wherein: the base substrate includes a conductive lower layer, a conductive upper layer, and at least one dielectric substrate disposed between the conductive lower layer and the conductive upper layer; and the The proximal end of the three-dimensional body is arranged on the upper layer.
態樣511. 如態樣510所述之電磁裝置,其中該至少一個介電基板包含鄰近該導電下部層之一上表面設置之一第一介電基板及鄰近該導電上部層之一下表面設置之一第二介電基板,該基底基板更包含:一薄膜黏合劑,設置於該第一介電基板與該第二介電基板之間且貼附至該第一介電基板及該第二介電基板;其中該帶狀線在該狹槽式開孔下方且正交於該狹槽式開孔而設置於該薄膜黏合劑與該第二介電基板之間。Aspect 511. The electromagnetic device according to aspect 510, wherein the at least one dielectric substrate includes a first dielectric substrate disposed adjacent to an upper surface of the conductive lower layer and a first dielectric substrate disposed adjacent to a lower surface of the conductive upper layer A second dielectric substrate, the base substrate further comprising: a thin film adhesive disposed between the first dielectric substrate and the second dielectric substrate and attached to the first dielectric substrate and the second dielectric substrate Electrical substrate; wherein the strip line is below the slot-type opening and is orthogonal to the slot-type opening and is arranged between the film adhesive and the second dielectric substrate.
態樣512. 如態樣501至511中任一項所述之電磁裝置,其中:該三維本體具有一第一區,該第一區朝向該三維本體之中心、由具有一第一平均介電常數之一介電材料製成,該第一區自一第一基底結構至少部分地延伸至該三維本體之該遠端,該第一基底結構靠近該三維本體之該近端;該三維本體具有在該第一區外側之一第二區,該第二區由具有大於該第一平均介電常數之一第二平均介電常數的除空氣外之一介電材料製成,該第二區自該三維本體之該近端至少部分地延伸至該三維本體之該遠端;該三維本體具有在該第二區外側之一第三區,該第二區由具有小於該第二平均介電常數之一第三平均介電常數之一介電材料製成,該第三區自一第二基底結構延伸至該三維本體之該遠端,該第二基底結構靠近該三維本體之該近端;該三維本體具有在該第三區外側之一第四區,該第四區由具有大於該第三平均介電常數之一第四平均介電常數之一介電材料製成,該第四區自該三維本體之該近端延伸至該三維本體之該遠端;其中該第二基底結構包含設置於該三維本體之該近端處之一相對薄之連接結構,該相對薄之連接結構與該第二區及該第四區一體地形成並橋接於該第二區與該第四區之間,俾使該第二區、該第四區及該相對薄之連接結構彼此一體地形成以形成該單片體之一部分,該相對薄之連接結構具有一整體高度H5,該整體高度H5小於該三維本體之一整體高度H6之30%;且其中除該相對薄之連接結構之外,該第三區中之該第二基底結構不存在該單片體之介電材料。Aspect 512. The electromagnetic device according to any one of aspects 501 to 511, wherein: the three-dimensional body has a first zone, and the first zone faces the center of the three-dimensional body and has a first average dielectric Made of a constant dielectric material, the first region at least partially extends from a first base structure to the distal end of the three-dimensional body, the first base structure is close to the proximal end of the three-dimensional body; the three-dimensional body has In a second area outside the first area, the second area is made of a dielectric material other than air having a second average dielectric constant greater than the first average dielectric constant, the second area The three-dimensional body extends at least partially from the proximal end of the three-dimensional body to the distal end of the three-dimensional body; the three-dimensional body has a third zone outside the second zone, and the second zone has an average dielectric smaller than the second Made of a dielectric material with one constant and one third average dielectric constant, the third region extends from a second base structure to the distal end of the three-dimensional body, and the second base structure is close to the proximal end of the three-dimensional body ; The three-dimensional body has a fourth area outside the third area, the fourth area is made of a dielectric material having a fourth average dielectric constant greater than the third average dielectric constant, the fourth The region extends from the proximal end of the three-dimensional body to the distal end of the three-dimensional body; wherein the second base structure includes a relatively thin connecting structure disposed at the proximal end of the three-dimensional body, the relatively thin connecting structure Formed integrally with the second zone and the fourth zone and bridged between the second zone and the fourth zone, so that the second zone, the fourth zone and the relatively thin connection structure are integrally formed with each other To form a part of the monolithic body, the relatively thin connection structure has an overall height H5, which is less than 30% of the overall height H6 of the three-dimensional body; and wherein, in addition to the relatively thin connection structure, The monolithic dielectric material does not exist in the second base structure in the third region.
態樣513. 如態樣512所述之電磁裝置,其中:該第一區之該第一基底結構具有一厚度H7,且與該第二區一體地形成並成單片式。Aspect 513. The electromagnetic device according to aspect 512, wherein: the first base structure of the first region has a thickness H7, and is integrally formed with the second region and is monolithic.
態樣514. 如態樣513所述之電磁裝置,其中:H7等於或小於0.015英吋。Aspect 514. The electromagnetic device according to aspect 513, wherein: H7 is equal to or less than 0.015 inches.
態樣515. 如態樣512至514中任一項所述之電磁裝置,其中:該狹槽式開孔由該第一區之該第一基底結構及該三維本體之該第二區完全覆蓋。Aspect 515. The electromagnetic device according to any one of aspects 512 to 514, wherein: the slot opening is completely covered by the first base structure of the first region and the second region of the three-dimensional body .
態樣516. 如態樣512至515中任一項所述之電磁裝置,其中:該相對薄之連接結構包含橋接於該第二區與該第四區間之至少二個臂。Aspect 516. The electromagnetic device of any one of aspects 512 to 515, wherein: the relatively thin connection structure includes at least two arms bridging the second region and the fourth region.
態樣517. 如態樣512至516中任一項所述之電磁裝置,其中:該相對薄之連接結構具有一整體寬度W1,該整體寬度W1小於該第二區之一整體寬度W2。Aspect 517. The electromagnetic device of any one of aspects 512 to 516, wherein: the relatively thin connection structure has an overall width W1 that is smaller than an overall width W2 of the second region.
態樣518. 如態樣501至517中任一項所述之電磁裝置,其中:該三維本體藉由該第一複數個通路錨定至該基底基板。Aspect 518. The electromagnetic device according to any one of aspects 501 to 517, wherein: the three-dimensional body is anchored to the base substrate through the first plurality of vias.
態樣519. 如態樣501至518中任一項所述之電磁裝置,其中:該第一複數個通路包含:第一對徑向相對之通路,當在一x-y平面剖面中觀察時,具有一整體寬度尺寸D3;第二對徑向相對之通路,當在一x-y平面剖面中觀察時,具有一整體寬度尺寸D4;且第三對徑向相對之通路,當在一x-y平面剖面中觀察時,具有一整體寬度尺寸D5。Aspect 519. The electromagnetic device according to any one of aspects 501 to 518, wherein: the first plurality of passages comprise: a first pair of diametrically opposed passages, when viewed in an xy plane cross-section, have An overall width dimension D3; the second pair of diametrically opposed passages, when viewed in an xy plane section, has an overall width dimension D4; and the third pair of diametrically opposed passages, when viewed in an xy plane section , Has an overall width dimension D5.
態樣520. 如態樣519所述之電磁裝置,其中:D4小於D3;且D5等於D4。Aspect 520. The electromagnetic device according to aspect 519, wherein: D4 is less than D3; and D5 is equal to D4.
態樣521. 如態樣519至520中任一項所述之電磁裝置,其中:尺寸D3、D4及D5係為直徑尺寸。Aspect 521. The electromagnetic device according to any one of aspects 519 to 520, wherein: dimensions D3, D4, and D5 are diameter dimensions.
態樣522. 如態樣501至521中任一項所述之電磁裝置,更包含:一電磁反射結構,包含一導電結構及與該導電結構一體地形成或進行電性連通之一導電電磁反射體;其中該電磁反射結構設置於該導電上部層上或與該導電上部層進行電性連通;其中該導電電磁反射體形成界定並至少部分地外接一凹槽(recess)之一壁;其中該三維本體設置於該凹槽內。Aspect 522. The electromagnetic device according to any one of aspects 501 to 521, further comprising: an electromagnetic reflection structure including a conductive structure and a conductive electromagnetic reflection that is formed integrally with the conductive structure or is electrically connected to the conductive structure Body; wherein the electromagnetic reflective structure is disposed on the conductive upper layer or is electrically connected to the conductive upper layer; wherein the conductive electromagnetic reflector forms a wall that defines and at least partially circumscribes a recess (recess); wherein the The three-dimensional body is arranged in the groove.
態樣523. 如態樣522所述之電磁裝置,其中:該反射體之該壁具有一高度H9,該高度H9大於該第二區之一高度H10。Aspect 523. The electromagnetic device according to aspect 522, wherein: the wall of the reflector has a height H9, and the height H9 is greater than a height H10 of the second region.
態樣524. 如態樣523所述之電磁裝置,其中:因應於該訊號饋源上存在一40十億赫(GHz)電性訊號,該三維本體以以下特性向遠場中輻射一電磁場:包含在電場(E-field)方向上等於或大於+/- 60度之一3dBi波束寬度之一增益分佈;包含在磁場(H-field)方向上等於或大於+/- 45度之一3dBi波束寬度之一增益分佈;包含在電場方向上等於或大於+/- 90度之一6dBi波束寬度之一增益分佈;以及包含在磁場方向上等於或大於+/- 60度之一6dBi波束寬度之一增益分佈。Aspect 524. The electromagnetic device according to aspect 523, wherein: in response to the presence of a 40 gigahertz (GHz) electrical signal on the signal feed, the three-dimensional body radiates an electromagnetic field into the far field with the following characteristics: Contains a gain distribution of 3dBi beam width equal to or greater than +/- 60 degrees in the electric field (E-field) direction; Contains a 3dBi beam equal to or greater than +/- 45 degrees in the magnetic field (H-field) direction One of the widths of the gain distribution; one of the gain distributions containing a 6dBi beam width equal to or greater than +/- 90 degrees in the electric field direction; and one of the 6dBi beam widths containing one of the 6dBi beam widths equal to or greater than +/- 60 degrees in the magnetic field direction Gain distribution.
態樣525. 如態樣523所述之電磁裝置,其中:因應於該訊號饋源上存在一特定十億赫電性訊號,該三維本體以以下特性向遠場中輻射一電磁場:在36十億赫下為約4.4 dBi至在41十億赫下為約5.8之一正角增益(boresight gain),具有大於10%之一所得頻寬。Aspect 525. The electromagnetic device according to aspect 523, wherein: in response to the presence of a specific gigahertz electrical signal on the signal feed, the three-dimensional body radiates an electromagnetic field into the far field with the following characteristics: It is about 4.4 dBi at one gigahertz to about 5.8 one-boresight gain at 41 gigahertz, with a bandwidth greater than one of 10%.
態樣526. 如態樣523所述之電磁裝置,其中:因應於該訊號饋源上存在一特定十億赫電性訊號,該三維本體以以下特性向遠場中輻射一電磁場:在36十億赫下為約4.4 dBi至在46十億赫下為約6 dBi之一正角增益,具有大於20%之一所得頻寬。Aspect 526. The electromagnetic device according to aspect 523, wherein: in response to the presence of a specific gigahertz electrical signal on the signal feed, the three-dimensional body radiates an electromagnetic field into the far field with the following characteristics: It is about 4.4 dBi at one gigahertz to a positive angle gain of approximately 6 dBi at 46 gigahertz, with a bandwidth greater than one of 20%.
態樣527. 一種由如態樣501至526中任一項所述之電磁裝置形成之陣列,其中:該陣列包含以一並排排列方式(side by side arrangement)設置之複數個該電磁裝置,其中各該電磁裝置之該基底基板係為一相鄰基底基板之一連續延伸部以形成一總體基底基板(aggregate base substrate),其中各該電磁裝置相對於該等電磁裝置其中之一相鄰電磁裝置包含一離散訊號饋源,且其中各該離散訊號饋源用以當相關聯之該訊號饋源上存在一特定電性訊號時將該等三維本體其中之一對應三維本體電磁激發成向遠場中輻射一電磁場。Aspect 527. An array formed by the electromagnetic device according to any one of aspects 501 to 526, wherein: the array includes a plurality of the electromagnetic devices arranged in a side by side arrangement, wherein The base substrate of each electromagnetic device is a continuous extension of an adjacent base substrate to form an aggregate base substrate, wherein each electromagnetic device is opposite to one of the electromagnetic devices adjacent to the electromagnetic device It includes a discrete signal feed, and each of the discrete signal feeds is used to electromagnetically excite one of the three-dimensional bodies corresponding to the three-dimensional body into a far field when a specific electrical signal exists on the associated signal feed Radiating an electromagnetic field.
態樣528. 一種製作如態樣501至526中任一項所述之電磁裝置之方法,包含:藉由自該基底基板之一底側穿過該第一複數個通路對一可成型介電介質進行射出成型(injection molding)而將該三維本體成型至該基底基板之一頂側上;且將該介電介質至少部分地固化。Aspect 528. A method of fabricating the electromagnetic device according to any one of aspects 501 to 526, comprising: pairing a moldable dielectric by passing through the first plurality of passages from a bottom side of the base substrate Performing injection molding to mold the three-dimensional body on a top side of the base substrate; and at least partially cure the dielectric medium.
態樣601. 一種用於一由電磁裝置形成之可轉向陣列(steerable array)之天線子系統,包含:複數個該電磁裝置,該等電磁裝置其中之每一電磁裝置包含排列於一表面上之一寬視場(field of view;FOV)介電共振天線(dielectric resonator antenna;DRA);一子系統板,對於該等電磁裝置其中之每一電磁裝置,包含一訊號饋源結構;該等電磁裝置貼附至該子系統板。Aspect 601. An antenna subsystem for a steerable array formed by electromagnetic devices, comprising: a plurality of the electromagnetic devices, each of the electromagnetic devices includes an electromagnetic device arranged on a surface A wide field of view (FOV) dielectric resonator antenna (DRA); a sub-system board, for each of the electromagnetic devices, includes a signal feed structure; the electromagnetic devices The device is attached to the subsystem board.
態樣602. 如態樣601所述之天線子系統,其中:各該介電共振天線包含一三維本體,該三維本體具有一第一區,該第一區朝向該三維本體之中心、由具有一第一平均介電常數之一介電材料製成,該第一區延伸至該三維本體之遠端;且該三維本體具有在該第一區外側之一第二區,該第二區由具有大於該第一平均介電常數之一第二平均介電常數的除空氣外之一介電材料製成,該第二區自該三維本體之近端延伸至該遠端。Aspect 602. The antenna subsystem according to aspect 601, wherein: each of the dielectric resonant antennas includes a three-dimensional body, the three-dimensional body has a first area, the first area faces the center of the three-dimensional body, and has A dielectric material with a first average dielectric constant is made, the first region extends to the distal end of the three-dimensional body; and the three-dimensional body has a second region outside the first region, the second region being The second region is made of a dielectric material other than air having a second average dielectric constant greater than the first average dielectric constant, and the second region extends from the proximal end to the distal end of the three-dimensional body.
態樣603. 如態樣602所述之天線子系統,其中:該等電磁裝置排列成一x×y陣列。Aspect 603. The antenna subsystem according to aspect 602, wherein: the electromagnetic devices are arranged in an x×y array.
態樣604. 如態樣602至603中任一項所述之天線子系統,其中:該等介電共振天線排列於一二維(two-dimensional;2D)表面上。Aspect 604. The antenna subsystem of any one of aspects 602 to 603, wherein the dielectric resonant antennas are arranged on a two-dimensional (2D) surface.
態樣604. 如態樣602至603中任一項所述之天線子系統,其中:該訊號饋源結構包含具有一訊號輸入端之一訊號線。Aspect 604. The antenna subsystem of any one of aspects 602 to 603, wherein: the signal feed structure includes a signal line having a signal input terminal.
態樣605. 如態樣604所述之天線子系統,其中:對於各該電磁裝置,該子系統板更包含一訊號通訊路徑,該訊號通訊路徑在其一端處設置有一輸入埠,該訊號通訊路徑之另一相對端電性連接至該等訊號饋源結構其中之一對應訊號饋源結構之該訊號輸入端。Aspect 605. The antenna subsystem of aspect 604, wherein: for each of the electromagnetic devices, the subsystem board further includes a signal communication path, the signal communication path is provided with an input port at one end thereof, and the signal communication The other opposite end of the path is electrically connected to the signal input end of one of the signal feed structures corresponding to the signal feed structure.
態樣606. 如態樣605所述之天線子系統,其中:該子系統板之各該輸入埠能夠連接至一電磁波束轉向子系統(EM beam steering subsystem)。Aspect 606. The antenna subsystem according to aspect 605, wherein: each input port of the subsystem board can be connected to an electromagnetic beam steering subsystem (EM beam steering subsystem).
態樣607. 如態樣606所述之天線子系統,更包含:一電磁波束轉向子系統,包含連接至數個訊號通訊通道之一電磁波束轉向晶片,與該電磁波束轉向晶片相關聯之各該訊號通訊通道具有一對應輸出端,該數個訊號通訊通道及該數個輸出端在數目上等於該等電磁裝置;其中該電磁波束轉向子系統之該等訊號通訊通道其中之一對應訊號通訊通道之各該輸出端連接至該天線子系統之該子系統板之該等輸入埠其中之一對應輸入埠。Aspect 607. The antenna subsystem according to aspect 606, further comprising: an electromagnetic beam steering subsystem, including an electromagnetic beam steering chip connected to a plurality of signal communication channels, and each of the electromagnetic beam steering chips associated with the electromagnetic beam steering chip The signal communication channel has a corresponding output terminal, and the plurality of signal communication channels and the plurality of output terminals are equal in number to the electromagnetic devices; wherein one of the signal communication channels of the electromagnetic beam steering subsystem corresponds to the signal communication Each output end of the channel is connected to one of the input ports of the subsystem board of the antenna subsystem corresponding to the input port.
態樣608. 如態樣602至607中任一項所述之天線子系統,其中:該子系統板更包含從中延伸之複數組非導電通路,各該組非導電通路與該等電磁裝置其中之一不同電磁裝置相關聯;該等電磁裝置其中之一對應電磁裝置之各該三維本體由一介電材料製成,該介電材料由除空氣外之一介質構成,各該三維本體具有一近端及一遠端,各該三維本體之該近端在該子系統板上設置成使得各該三維本體至少部分地或完全覆蓋該等組非導電通路其中之對應之一組非導電通路;且該等組非導電通路至少部分地填充有相關聯之該三維本體之該介電材料,俾使各該三維本體及經至少部分地填充的對應之該組非導電通路之該介電材料形成一單片體。Aspect 608. The antenna subsystem according to any one of aspects 602 to 607, wherein: the subsystem board further comprises a plurality of non-conductive paths extending therefrom, each of the groups of non-conductive paths and the electromagnetic devices One of the different electromagnetic devices is associated; each of the three-dimensional body of one of the electromagnetic devices corresponding to the electromagnetic device is made of a dielectric material, the dielectric material is made of a medium other than air, and each three-dimensional body has a A proximal end and a distal end, the proximal end of each of the three-dimensional bodies is arranged on the subsystem board such that each of the three-dimensional bodies at least partially or completely covers a corresponding one of the groups of non-conductive paths; And the groups of non-conductive paths are at least partially filled with the dielectric material of the associated three-dimensional body, so that each of the three-dimensional bodies and the dielectric material of the corresponding group of non-conductive paths that are at least partially filled are formed A monolithic body.
態樣609. 如態樣608所述之天線子系統,其中:該三維本體完全覆蓋對應之該組非導電通路。Aspect 609. The antenna subsystem according to aspect 608, wherein: the three-dimensional body completely covers the corresponding set of non-conductive paths.
態樣610. 如態樣608至609中任一項所述之天線子系統,其中:該等組非導電通路完全填充有相關聯之該三維本體之該介電材料。Aspect 610. The antenna subsystem of any one of aspects 608 to 609, wherein: the sets of non-conductive paths are completely filled with the dielectric material of the associated three-dimensional body.
態樣611. 如態樣608至610中任一項所述之天線子系統,其中:該子系統板更包含:一導電下部層;一導電上部層;一第一介電基板,鄰近該導電下部層之一上表面設置;一第二介電基板,鄰近該導電上部層之一下表面設置;以及一薄膜黏合劑,設置於該第一介電基板與該第二介電基板之間且貼附至該第一介電基板及該第二介電基板。Aspect 611. The antenna subsystem of any one of aspects 608 to 610, wherein: the subsystem board further comprises: a conductive lower layer; a conductive upper layer; a first dielectric substrate adjacent to the conductive A second dielectric substrate is disposed adjacent to a lower surface of the conductive upper layer; and a film adhesive is disposed between the first dielectric substrate and the second dielectric substrate and is attached Attached to the first dielectric substrate and the second dielectric substrate.
態樣612. 如態樣611所述之天線子系統,其中:該訊號饋源結構更包含:一帶狀線,設置於該薄膜黏合劑與該第二介電基板之間,該導電上部層包含設置於對應之該帶狀線上方且正交於對應之該帶狀線之一狹槽式開孔,各該帶狀線具有該訊號輸入端,各該狹槽式開孔由對應之該電磁裝置之該三維本體完全覆蓋,該三維本體之該近端設置於該導電上部層上。Aspect 612. The antenna subsystem according to aspect 611, wherein: the signal feed structure further comprises: a strip line disposed between the thin film adhesive and the second dielectric substrate, the conductive upper layer It includes a slot type opening arranged above the corresponding strip line and orthogonal to the corresponding strip line, each of the strip lines has the signal input end, and each of the slot type openings is controlled by the corresponding The three-dimensional body of the electromagnetic device is completely covered, and the proximal end of the three-dimensional body is arranged on the conductive upper layer.
態樣613. 如態樣611至612中任一項所述之天線子系統,其中:該子系統板之該訊號通訊路徑設置於該薄膜黏合劑與該第二介電基板之間,該訊號通訊路徑在其一端處設置有該輸入埠,該訊號通訊路徑之另一相對端電性連接至該等帶狀線其中之一對應帶狀線之該訊號輸入端。Aspect 613. The antenna subsystem of any one of aspects 611 to 612, wherein: the signal communication path of the subsystem board is disposed between the film adhesive and the second dielectric substrate, and the signal The communication path is provided with the input port at one end thereof, and the other opposite end of the signal communication path is electrically connected to the signal input end of one of the strip lines corresponding to the strip line.
態樣614. 如態樣611至613中任一項所述之天線子系統,其中:該子系統板更包含將該導電上部層連接至該導電下部層之第一複數個導電通路,該第一複數個導電通路設置於該等訊號通訊路徑其中之相應訊號通訊路徑之每一側上。Aspect 614. The antenna subsystem according to any one of aspects 611 to 613, wherein: the subsystem board further comprises a first plurality of conductive paths connecting the conductive upper layer to the conductive lower layer, the first A plurality of conductive paths are arranged on each side of the corresponding signal communication path among the signal communication paths.
態樣615. 如態樣612至614中任一項所述之天線子系統,其中:該基板板更包含將該導電上部層連接至該導電下部層之第二複數個導電通路,該第二複數個導電通路設置於該等帶狀線其中之相應帶狀線之每一側上及一端處。Aspect 615. The antenna subsystem of any one of aspects 612 to 614, wherein: the substrate board further comprises a second plurality of conductive paths connecting the conductive upper layer to the conductive lower layer, the second A plurality of conductive paths are arranged on each side and one end of the corresponding one of the strip lines.
態樣616. 如態樣608至609中任一項所述之天線子系統,其中:該等組非導電通路在該導電下部層與該導電上部層之間延伸。Aspect 616. The antenna subsystem of any one of aspects 608 to 609, wherein: the sets of non-conductive paths extend between the conductive lower layer and the conductive upper layer.
態樣617. 如態樣601至616中任一項所述之天線子系統,其中:該等電磁裝置係根據如態樣25、116、219、319及419中任一項所述之一對應電磁裝置而成。Aspect 617. The antenna subsystem according to any one of aspects 601 to 616, wherein: the electromagnetic devices correspond to any one of aspects 25, 116, 219, 319, and 419 Made of electromagnetic device.
態樣701. 一種用於一由電磁裝置形成之可轉向陣列之天線子系統,包含:複數個該電磁裝置,該等電磁裝置其中之每一電磁裝置包含排列於一表面上之一寬視場(FOV)介電共振天線(DRA),該等電磁裝置其中之每一電磁裝置更包含一基底基板,各該基底基板包含設置成與該等介電共振天線其中之一對應介電共振天線進行電磁訊號通訊之一訊號饋源結構;其中各該電磁裝置之該基底基板係為該等基底基板其中之一相鄰基底基板之一連續延伸部以形成一總體基底基板,該等介電共振天線貼附至該總體基底基板;其中該總體基底基板包含在數目上與該等介電共振天線之數目相等之複數個輸入埠,各該輸入埠電性連接至該等訊號饋源結構其中之一對應訊號饋源結構,該對應訊號饋源結構與該等介電共振天線其中之一對應介電共振天線進行訊號通訊;該天線子系統提供適合於將該等電磁裝置排列成能夠由多個該天線子系統形成之任何排列大小之一結構。Aspect 701. An antenna subsystem for a steerable array formed by electromagnetic devices, comprising: a plurality of the electromagnetic devices, each of the electromagnetic devices includes a wide field of view arranged on a surface (FOV) Dielectric Resonant Antennas (DRA). Each of the electromagnetic devices further includes a base substrate, and each base substrate includes a dielectric resonant antenna arranged to correspond to one of the dielectric resonant antennas. A signal feed structure for electromagnetic signal communication; wherein the base substrate of each electromagnetic device is a continuous extension of one of the base substrates adjacent to the base substrate to form an overall base substrate, the dielectric resonant antennas Attached to the overall base substrate; wherein the overall base substrate includes a plurality of input ports equal in number to the number of the dielectric resonant antennas, and each input port is electrically connected to one of the signal feed structures Corresponding to the signal feed structure, the corresponding signal feed structure performs signal communication with one of the dielectric resonant antennas corresponding to the dielectric resonant antenna; the antenna subsystem is suitable for arranging the electromagnetic devices so as to be Any arrangement size structure formed by the antenna subsystem.
態樣702. 如態樣701所述之天線子系統,其中:各該介電共振天線包含一三維本體,該三維本體具有一第一區,該第一區朝向該三維本體之中心、由具有一第一平均介電常數之一介電材料製成,該第一區延伸至該三維本體之遠端;且該三維本體具有在該第一區外側之一第二區,該第二區由具有大於該第一平均介電常數之一第二平均介電常數的除空氣外之一介電材料製成,該第二區自該三維本體之近端延伸至該遠端。Aspect 702. The antenna subsystem of aspect 701, wherein: each of the dielectric resonant antennas includes a three-dimensional body, the three-dimensional body has a first zone, the first zone faces the center of the three-dimensional body, and has A dielectric material with a first average dielectric constant is made, the first region extends to the distal end of the three-dimensional body; and the three-dimensional body has a second region outside the first region, the second region being The second region is made of a dielectric material other than air having a second average dielectric constant greater than the first average dielectric constant, and the second region extends from the proximal end to the distal end of the three-dimensional body.
態樣703. 如態樣701至702中任一項所述之天線子系統,其中:該等電磁裝置排列成一x×y陣列。Aspect 703. The antenna subsystem of any one of aspects 701 to 702, wherein: the electromagnetic devices are arranged in an x×y array.
態樣704. 如態樣701至703中任一項所述之天線子系統,其中:該等介電共振天線排列於一二維(2D)表面上。Aspect 704. The antenna subsystem of any one of aspects 701 to 703, wherein: the dielectric resonant antennas are arranged on a two-dimensional (2D) surface.
態樣705. 如態樣701至704中任一項所述之天線子系統,其中:該總體基底基板之該等輸入埠其中之每一輸入埠係為一焊料墊(solder pad)。Aspect 705. The antenna subsystem according to any one of aspects 701 to 704, wherein: each of the input ports of the overall base substrate is a solder pad.
態樣706. 如態樣701至705中任一項所述之天線子系統,其中:該總體基底基板之該等輸入埠能夠連接至一電磁波束轉向子系統。Aspect 706. The antenna subsystem of any one of aspects 701 to 705, wherein: the input ports of the overall base substrate can be connected to an electromagnetic beam steering subsystem.
態樣707. 如態樣701至706中任一項所述之天線子系統,更包含:一電磁波束轉向子系統,包含連接至複數個訊號通訊通道之一電磁波束轉向晶片,與該電磁波束轉向晶片相關聯之各該訊號通訊通道具有一對應輸出埠;其中該電磁波束轉向子系統之各該輸出埠連接至該天線子系統之該總體基底基板之該等輸入埠其中之一對應輸入埠。Aspect 707. The antenna subsystem as described in any one of aspects 701 to 706, further comprising: an electromagnetic beam steering subsystem, including an electromagnetic beam steering chip connected to a plurality of signal communication channels, and the electromagnetic beam Each of the signal communication channels associated with the steering chip has a corresponding output port; wherein each output port of the electromagnetic beam steering subsystem is connected to one of the input ports of the overall base substrate of the antenna subsystem corresponding to the input port .
態樣708. 如態樣702至707中任一項所述之天線子系統,其中各該基底基板包含:一導電下部層;一導電上部層;一第一介電基板,鄰近該導電下部層之一上表面設置;以及一第二介電基板,鄰近該導電上部層之一下表面設置;以及一薄膜黏合劑,設置於該第一介電基板與該第二介電基板之間且貼附至該第一介電基板及該第二介電基板;一帶狀線,設置於該薄膜黏合劑與該第二介電基板之間,該導電上部層包含設置於該帶狀線上方且正交於該帶狀線之一狹槽式開孔,各該狹槽式開孔由對應之該電磁裝置之該三維本體完全覆蓋,且該三維本體之該近端設置於該導電上部層上。Aspect 708. The antenna subsystem according to any one of aspects 702 to 707, wherein each of the base substrates comprises: a conductive lower layer; a conductive upper layer; a first dielectric substrate adjacent to the conductive lower layer An upper surface is provided; and a second dielectric substrate is provided adjacent to a lower surface of the conductive upper layer; and a thin film adhesive is provided between the first dielectric substrate and the second dielectric substrate and is attached To the first dielectric substrate and the second dielectric substrate; a strip line is arranged between the thin film adhesive and the second dielectric substrate; the conductive upper layer includes a strip line that is arranged above and directly above the strip line A slot-type opening crosses the strip line, each slot-type opening is completely covered by the corresponding three-dimensional body of the electromagnetic device, and the proximal end of the three-dimensional body is arranged on the conductive upper layer.
態樣709. 如態樣708所述之天線子系統,其中:各該輸入埠電性連接至該等帶狀線其中之一對應帶狀線,該對應帶狀線與該等狹槽式開孔其中之一相關聯狹槽式開孔進行訊號通訊,該相關聯狹槽式開孔設置於該等電磁裝置其中之一給定電磁裝置之該三維本體之下。Aspect 709. The antenna subsystem according to aspect 708, wherein: each of the input ports is electrically connected to one of the strip lines corresponding to the strip line, and the corresponding strip line is connected to the slot openings. One of the holes is associated with a slot-type opening for signal communication, and the associated slot-type opening is arranged under the three-dimensional body of a given electromagnetic device of one of the electromagnetic devices.
態樣710. 一種用於一由電磁裝置形成之可轉向陣列之天線陣列,包含複數個覆瓦式的如態樣701至709中任一項所述之天線子系統。Aspect 710. An antenna array for a steerable array formed by an electromagnetic device, comprising a plurality of shingled antenna subsystems as described in any one of aspects 701 to 709.
態樣711. 如態樣710所述之天線陣列,其中該等覆瓦式天線子系統能夠形成為一非平面構形(non-planar configuration)。Aspect 711. The antenna array of aspect 710, wherein the tiled antenna subsystems can be formed in a non-planar configuration.
態樣712. 如態樣711所述之天線陣列,其中該總體基底基板係為一撓性電路板。Aspect 712. The antenna array according to aspect 711, wherein the overall base substrate is a flexible circuit board.
態樣713. 如態樣701至712中任一項所述之天線子系統,其中:該等電磁裝置係根據如態樣26、117、220、320、420及520中任一項所述之一對應電磁裝置而成。Aspect 713. The antenna subsystem according to any one of aspects 701 to 712, wherein: the electromagnetic devices are according to any one of aspects 26, 117, 220, 320, 420, and 520 One corresponds to the electromagnetic device.
[相關申請案之交叉參考]:本申請案主張於2018年11月29日提出申請之美國臨時申請案第62/772,884號之權益,該美國臨時申請案以引用方式全文併入本文中。[Cross Reference of Related Applications]: This application claims the rights and interests of U.S. Provisional Application No. 62/772,884 filed on November 29, 2018, which is incorporated herein by reference in its entirety.
1100:電磁裝置 1101:正交x-y-z軸 1102:三維本體 1103:第四區與第二區成一體及單片式 1104:三維本體之近端 1105:錐形(傾斜)線 1106:三維本體之遠端 1107:腔 1108:第一區 1110:三維本體之中心 1112:第二區 1114:第三區 1116:介電材料 1118:突出部 1120:第四區 1122:突出部 1124:橋區段 1200:基底基板 1202:訊號饋源 2100:電磁裝置 2101:正交x-y-z軸 2102:三維本體 2104:三維本體之近端 2106:三維本體之遠端 2130:第一部分 2132:第一內區/內部分 2134:截頭圓錐形表面 2140:第二部分 2142:第二內區 2144:截頭圓錐形表面 2200:基底基板 2202:訊號饋源 3100:電磁裝置 3101:正交x-y-z軸 3102:三維本體 3104:三維本體之近端 3106:三維本體之遠端 3108:三維本體之外側壁 3110:三維本體之外側壁 3112:三維本體之外側壁 3130:第一區 3140:第二區 3142:第一部分 3144:第二部分 3150:第三區 3152:橋部分 3154:空隙 3200:基底基板 3202:訊號饋源 3300:由電磁裝置形成之陣列 3302:連接結構 3304:支腳 3306:第二部分緊靠且接觸第一部分 3308:材料間隙 4100:電磁裝置 4101:正交x-y-z軸 4102:三維本體 4104:三維本體之近端 4106:三維本體之遠端 4108:第一區 4110:三維本體之軸向中心 4112:第一基底結構 4114:第二區 4116:第三區 4118:第二基底結構 4120:第四區 4122:連接結構 4124:第二區之遠端 4200:基底基板 4202:訊號饋源 4300:由電磁裝置形成之陣列 5100:電磁裝置 5101:正交x-y-z軸 5102:三維本體 5104:三維本體之近端 5106:三維本體之遠端 5108:第一區 5110:三維本體之中心 5112:第一基底結構 5114:第二區 5116:第三區 5118:第二基底結構 5120:第四區 5122:連接結構 5124:臂 5126:第二區之遠端 5128:凸形外表面 6100:電磁裝置 6101:正交x-y-z軸 6102:三維本體 6104:三維本體之近端 6106:三維本體之遠端 6108:第一區 6110:三維本體中心 6112:第一基底結構 6114:第二區 6116:第三區 6118:第二基底結構 6120:第四區 6122:連接結構 6124:臂 6200:基底基板 6202:訊號饋源 6204:第一複數個通路 6206:第二複數個通路 6208:帶狀線 6210:狹槽式開孔 6212:導電下部層 6214:導電上部層 6216:第一介電基板 6218:第二介電基板 6220:薄膜黏合劑接合夾層/薄膜黏合劑 6222:第一對徑向相對之通路 6224:第二對徑向相對之通路 6226:第三對徑向相對之通路 6230:總體基底基板 6300:電磁反射結構 6302:導電結構 6304:導電電磁反射體 6306:壁 6308:凹槽 6400:由電磁裝置形成之陣列 7000:天線子系統 7002:表面 7010:子系統板 7012:訊號通訊路徑 7014:輸入埠 7016:第一複數個導電通路 7018:第二複數個導電通路 7100:電磁裝置 7101:正交x-y-z軸 7102:三維本體 7150:介電共振天線 7202:訊號饋源結構 7204:訊號輸入端 7208:帶狀線 7500:電磁波束轉向子系統 7502:電磁波束轉向晶片 7504:訊號通訊通道 7506:輸出端 7508:散熱器 8000:天線子系統 8002:表面 8100:電磁裝置 8101:正交x-y-z軸 8102:三維本體 8150:介電共振天線 8200:基底基板 8202:訊號饋源結構 8204:輸入埠 8230:總體基底基板/撓性電路板 8300:覆瓦式陣列 8500:電磁波束轉向子系統 8502:電磁波束轉向晶片 8504:訊號通訊通道 8506:輸出埠 8600:可轉向天線陣列 8610:可轉向波束 D1:整體外剖面尺寸 D2:直徑/整體外剖面尺寸 D3:直徑/整體寬度尺寸 D4:直徑/整體寬度尺寸 D5:整體寬度尺寸 H1:整體高度 H2:整體高度 H3:剖面整體高度 H4:整體高度 H5:整體高度 H6:整體高度 H7:厚度 H8:厚度 H9:高度 H10:高度 P1A:第一剖面輪廓 P1B:第二剖面輪廓 P2A:第一外剖面輪廓 P2B:第二外剖面輪廓 L1:剖面整體長度 L2:剖面整體長度 L3:剖面整體長度 W1:剖面整體寬度 W2:剖面整體寬度 W3:剖面整體寬度 W4:整體外尺寸 W5:整體寬度 x、y、z:軸線1100: electromagnetic device 1101: Orthogonal x-y-z axis 1102: Three-dimensional ontology 1103: The fourth zone and the second zone are integrated and monolithic 1104: The proximal end of the three-dimensional body 1105: Conical (inclined) line 1106: The distal end of the three-dimensional body 1107: cavity 1108: District One 1110: The center of the three-dimensional body 1112: Second District 1114: Third District 1116: Dielectric materials 1118: protrusion 1120: Fourth District 1122: protrusion 1124: bridge section 1200: base substrate 1202: signal feed 2100: electromagnetic device 2101: Orthogonal x-y-z axis 2102: Three-dimensional ontology 2104: The proximal end of the three-dimensional body 2106: The distal end of the three-dimensional body 2130: Part One 2132: The first inner area / inner part 2134: frustoconical surface 2140: Part Two 2142: Second Inner District 2144: frustoconical surface 2200: base substrate 2202: signal feed 3100: electromagnetic device 3101: Orthogonal x-y-z axis 3102: Three-dimensional ontology 3104: The proximal end of the three-dimensional body 3106: The distal end of the three-dimensional body 3108: Outer side wall of three-dimensional body 3110: Outer side wall of three-dimensional body 3112: Outer side wall of three-dimensional body 3130: District 1 3140: Second District 3142: Part One 3144: Part Two 3150: Third District 3152: bridge part 3154: gap 3200: base substrate 3202: signal feed 3300: Array formed by electromagnetic devices 3302: Connection structure 3304: feet 3306: The second part abuts and touches the first part 3308: Material gap 4100: electromagnetic device 4101: Orthogonal x-y-z axis 4102: Three-dimensional ontology 4104: The proximal end of the three-dimensional body 4106: The distal end of the three-dimensional body 4108: District 1 4110: The axial center of the three-dimensional body 4112: The first base structure 4114: Second District 4116: Third District 4118: Second base structure 4120: Fourth District 4122: Connection structure 4124: The far end of the second zone 4200: base substrate 4202: signal feed 4300: Array formed by electromagnetic devices 5100: electromagnetic device 5101: Orthogonal x-y-z axis 5102: Three-dimensional ontology 5104: The proximal end of the three-dimensional body 5106: The distal end of the three-dimensional body 5108: District 1 5110: The center of the three-dimensional body 5112: The first base structure 5114: Second District 5116: Third District 5118: second base structure 5120: Fourth District 5122: Connection structure 5124: arm 5126: The far end of the second zone 5128: Convex outer surface 6100: electromagnetic device 6101: Orthogonal x-y-z axis 6102: Three-dimensional ontology 6104: The proximal end of the three-dimensional body 6106: The distal end of the three-dimensional body 6108: District 1 6110: 3D body center 6112: The first base structure 6114: Second District 6116: Third District 6118: second base structure 6120: District 4 6122: connection structure 6124: arm 6200: base substrate 6202: signal feed 6204: The first plural channels 6206: The second plural channels 6208: Stripline 6210: Slotted hole 6212: conductive lower layer 6214: conductive upper layer 6216: The first dielectric substrate 6218: second dielectric substrate 6220: Film adhesive bonding interlayer/film adhesive 6222: The first pair of diametrically opposed passages 6224: The second pair of diametrically opposed passages 6226: The third pair of diametrically opposed passages 6230: Overall base substrate 6300: Electromagnetic reflection structure 6302: conductive structure 6304: conductive electromagnetic reflector 6306: wall 6308: Groove 6400: Array formed by electromagnetic devices 7000: antenna subsystem 7002: Surface 7010: Subsystem board 7012: Signal communication path 7014: Input port 7016: The first plurality of conductive paths 7018: The second plurality of conductive paths 7100: electromagnetic device 7101: Orthogonal x-y-z axis 7102: Three-dimensional ontology 7150: Dielectric resonance antenna 7202: Signal feed structure 7204: Signal input terminal 7208: Stripline 7500: Electromagnetic beam steering subsystem 7502: Electromagnetic beam steering chip 7504: Signal communication channel 7506: output 7508: radiator 8000: antenna subsystem 8002: surface 8100: electromagnetic device 8101: Orthogonal x-y-z axis 8102: Three-dimensional ontology 8150: Dielectric resonance antenna 8200: base substrate 8202: signal feed structure 8204: Input port 8230: Overall base substrate/flexible circuit board 8300: tiled array 8500: Electromagnetic beam steering subsystem 8502: Electromagnetic beam steering chip 8504: signal communication channel 8506: output port 8600: steerable antenna array 8610: steerable beam D1: Overall external profile size D2: Diameter/Overall profile size D3: Diameter / overall width size D4: Diameter / overall width size D5: Overall width dimension H1: Overall height H2: Overall height H3: Overall height of section H4: Overall height H5: Overall height H6: Overall height H7: Thickness H8: Thickness H9: height H10: height P1A: First profile profile P1B: Second profile profile P2A: First outer profile profile P2B: second outer profile profile L1: Overall length of the section L2: Overall length of the section L3: Overall length of the section W1: Overall width of the section W2: Overall width of the section W3: Overall width of the section W4: Overall external dimensions W5: Overall width x, y, z: axis
參照實例性非限制性附圖,其中相同元件之編號相同,或其中相似元件之編號相似但具有不同之首個數字,在附圖中:With reference to exemplary non-limiting drawings, in which the numbers of the same elements are the same, or the numbers of similar elements are similar but have different first numbers, in the drawings:
第1A圖繪示根據一實施例之一電磁裝置之對應透明且立體之旋轉等角視圖;Figure 1A shows a corresponding transparent and three-dimensional rotating isometric view of an electromagnetic device according to an embodiment;
第1B圖繪示根據一實施例第1A圖所示電磁裝置之局部平面圖及對應立面圖;Figure 1B shows a partial plan view and corresponding elevation view of the electromagnetic device shown in Figure 1A according to an embodiment;
第1C圖繪示根據一實施例第1A圖及第1B圖所示電磁裝置之平面圖;Figure 1C shows a plan view of the electromagnetic device shown in Figures 1A and 1B according to an embodiment;
第2圖繪示根據一實施例作為第1A圖至第1C圖所示電磁裝置之替代方案之一電磁裝置之透明旋轉等角視圖;Figure 2 shows a transparent rotating isometric view of an electromagnetic device according to an embodiment as an alternative to the electromagnetic device shown in Figures 1A to 1C;
第3A圖繪示根據一實施例作為第2圖所示電磁裝置之替代方案但與第1A圖至第1C圖有關之一電磁裝置之對應透明旋轉等角y-z剖視立面圖及x-z剖視立面圖;Figure 3A shows the corresponding transparent rotating isometric yz cross-sectional elevation view and xz cross-sectional view of an electromagnetic device according to an embodiment as an alternative to the electromagnetic device shown in Figure 2 but related to Figures 1A to 1C Elevation view
第3B圖繪示根據一實施例第3A圖所示電磁裝置之對應透明y-z剖視立面圖及x-z剖視立面圖;Figure 3B shows the corresponding transparent y-z cross-sectional elevation view and x-z cross-sectional elevation view of the electromagnetic device shown in Figure 3A according to an embodiment;
第3C圖繪示根據一實施例之一由第3A圖至第3B圖其中之任一者所示電磁裝置形成之陣列之替代透明剖視立面圖;3C shows an alternative transparent cross-sectional elevation view of the array formed by the electromagnetic devices shown in any one of FIGS. 3A to 3B according to one embodiment;
第4A圖繪示根據一實施例作為第2圖所示電磁裝置之替代方案但與第1A圖至第1C圖有關之一電磁裝置之對應立體旋轉等角視圖及透明剖視立面圖;Figure 4A shows a corresponding three-dimensional rotating isometric view and a transparent cross-sectional elevation view of an electromagnetic device according to an embodiment as an alternative to the electromagnetic device shown in Figure 2 but related to Figures 1A to 1C;
第4B圖繪示根據一實施例之一由第4A圖所示電磁裝置形成之陣列之對應透明旋轉等角視圖;Figure 4B shows a corresponding transparent rotating isometric view of the array formed by the electromagnetic device shown in Figure 4A according to one embodiment;
第5圖繪示根據一實施例作為第2圖所示電磁裝置之替代方案但與第1A圖至第1C圖有關之一電磁裝置之對應剖視立面圖、平面圖及立體旋轉等角視圖;Figure 5 shows a corresponding cross-sectional elevation view, plan view, and three-dimensional rotating isometric view of an electromagnetic device according to an embodiment as an alternative to the electromagnetic device shown in Figure 2 but related to Figures 1A to 1C;
第6A圖繪示根據一實施例作為第2圖所示電磁裝置之替代方案但與第1A圖至第1C圖有關之一電磁裝置之對應透明平面圖及旋轉等角視圖;Figure 6A shows a corresponding transparent plan view and a rotated isometric view of an electromagnetic device according to an embodiment as an alternative to the electromagnetic device shown in Figure 2 but related to Figures 1A to 1C;
第6B圖繪示根據一實施例第6A圖所示電磁裝置之一外形(form)之對應透明平面圖及旋轉等角視圖;Figure 6B shows a corresponding transparent plan view and a rotated isometric view of a form of the electromagnetic device shown in Figure 6A according to an embodiment;
第6C圖繪示根據一實施例第6A圖所示電磁裝置之另一外形之透明剖視立面圖;Figure 6C shows a transparent cross-sectional elevation view of another shape of the electromagnetic device shown in Figure 6A according to an embodiment;
第6D圖繪示根據一實施例第6A圖所示電磁裝置之另一外形之透明剖視立面圖;Fig. 6D shows a transparent cross-sectional elevation view of another shape of the electromagnetic device shown in Fig. 6A according to an embodiment;
第6E圖、第6F圖、第6G圖及第6H圖繪示根據一實施例第6B圖所示電磁裝置之一單位單元之分析建模效能特性;Fig. 6E, Fig. 6F, Fig. 6G, and Fig. 6H illustrate the analysis and modeling performance characteristics of a unit cell of the electromagnetic device shown in Fig. 6B according to an embodiment;
第6I圖繪示根據一實施例之一由第6B圖所示電磁裝置形成之陣列之透明平面圖;FIG. 6I shows a transparent plan view of an array formed by the electromagnetic device shown in FIG. 6B according to one embodiment;
第6J圖繪示根據一實施例之一由第6B圖所示電磁裝置形成之陣列之透明旋轉等角視圖;Figure 6J shows a transparent rotating isometric view of the array formed by the electromagnetic device shown in Figure 6B according to one embodiment;
第7A圖繪示根據一實施例之用於一由電磁裝置形成之可轉向陣列之一天線子系統之透明平面圖;Figure 7A shows a transparent plan view of an antenna subsystem used in a steerable array formed by an electromagnetic device according to an embodiment;
第7B圖繪示根據一實施例第7A圖所示陣列之透明旋轉等角視圖;Figure 7B shows a transparent rotating isometric view of the array shown in Figure 7A according to an embodiment;
第7C圖繪示根據一實施例第7A圖所示陣列之透明側視立面圖;Figure 7C shows a transparent side elevation view of the array shown in Figure 7A according to an embodiment;
第7D圖繪示根據一實施例第7A圖、第7B圖及第7C圖所示天線子系統之透明側視立面圖,其中一電磁波束轉向子系統耦合至該天線子系統;Figure 7D shows a transparent side elevation view of the antenna subsystems shown in Figures 7A, 7B, and 7C according to an embodiment, in which an electromagnetic beam steering subsystem is coupled to the antenna subsystem;
第8A圖繪示根據一實施例用於一由電磁裝置形成之可轉向陣列之一天線子系統之透明立面圖,該天線子系統與第7B圖所示者相似、耦合至一電磁波束轉向子系統;Figure 8A shows a transparent elevation view of an antenna subsystem for a steerable array formed by an electromagnetic device according to an embodiment. The antenna subsystem is similar to that shown in Figure 7B, coupled to an electromagnetic beam steering Subsystem
第8B圖繪示根據一實施例第8A圖所示天線子系統之透明立面圖;Figure 8B shows a transparent elevation view of the antenna subsystem shown in Figure 8A according to an embodiment;
第8C圖繪示根據一實施例之一由第8A圖所示天線子系統形成之覆瓦式平面陣列之對應平面圖及透明立面圖;FIG. 8C shows a corresponding plan view and a transparent elevation view of a tile-covered planar array formed by the antenna subsystem shown in FIG. 8A according to one embodiment;
第8D圖繪示根據一實施例第8C圖所示陣列之透明立面圖;Figure 8D shows a transparent elevation view of the array shown in Figure 8C according to an embodiment;
第8E圖繪示根據一實施例第8C圖及第8D圖所示陣列之透明立面圖,其中例示一可轉向電磁波束;以及Fig. 8E shows a transparent elevation view of the array shown in Fig. 8C and Fig. 8D according to an embodiment, which illustrates a steerable electromagnetic beam; and
第8F圖繪示根據一實施例之一由第8A圖所示天線子系統及電磁波束轉向子系統形成之覆瓦式非平面陣列之透明立面圖。Fig. 8F shows a transparent elevation view of a tile-shaped non-planar array formed by the antenna subsystem and electromagnetic beam steering subsystem shown in Fig. 8A according to one embodiment.
1100:電磁裝置 1100: electromagnetic device
1101:軸線 1101: Axis
1102:三維本體 1102: Three-dimensional ontology
1104:三維本體之近端 1104: The proximal end of the three-dimensional body
1106:三維本體之遠端 1106: The distal end of the three-dimensional body
1108:第一區 1108: District One
1112:第二區 1112: Second District
1114:第三區 1114: Third District
1120:第四區 1120: Fourth District
1200:基底基板 1200: base substrate
1202:訊號饋源 1202: signal feed
x、y、z:軸線 x, y, z: axis
Claims (179)
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