TW202025582A - Distributed feedback semiconductor laser device - Google Patents
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Abstract
Description
本發明是指於一種半導體雷射裝置,且特別是指一種單一波長光輸出的分佈反饋式(distributed feedback;DFB)半導體雷射裝置。 The present invention refers to a semiconductor laser device, and particularly refers to a distributed feedback (DFB) semiconductor laser device with a single wavelength light output.
半導體雷射主要有法布立-培若(Fabry-Perot;FP)雷射、分佈反饋式雷射和垂直共振腔面射型雷射(vertical cavity surface emitting laser;VCSEL)等。對於分佈式反饋雷射而言,其波長穩定度及旁模抑制比(side mode suppression ratio;SMSR)為生產良率的關鍵因素,主要造成雷射失效的原因在於使用均勻對稱光柵結構的分佈式反饋雷射,造成雷射發光的波長不在光柵結構所對應的布拉格波長上,而是發光在其布拉格波長的兩端禁止帶邊緣,形成不穩定的雙波長光輸出。雖然可利用電子束光刻技術製作相位偏移光柵以提升波長穩定度及旁模抑制比,但相對地分佈式反饋雷射的製作成本及時間亦大幅提高。 Semiconductor lasers mainly include Fabry-Perot (FP) lasers, distributed feedback lasers, and vertical cavity surface emitting lasers (VCSEL). For distributed feedback lasers, its wavelength stability and side mode suppression ratio (SMSR) are key factors in production yield. The main reason for the failure of the laser is the use of distributed uniform symmetric grating structures. With feedback of the laser, the wavelength of the laser light is not at the Bragg wavelength corresponding to the grating structure, but at the edge of the prohibition band at both ends of the Bragg wavelength, forming an unstable dual-wavelength light output. Although electron beam lithography technology can be used to fabricate phase shift gratings to improve wavelength stability and side-mode rejection ratio, the production cost and time of relatively distributed feedback lasers have also been greatly increased.
本發明的目的是在於提供一種分佈反饋式半導體雷射裝置,其具有單模輸出特性,即主模能量與次模能量的差距至少為30dB,且具有高波長穩定度、高旁模抑制比及改善操作時的空間燒洞效應。此外,分佈反饋式半導體雷射裝置中的光柵結構可透過雷射干涉微影製程和濕式蝕刻定義,故相較於電子束光刻技術製作方式,可有效降低製作成本及時間。 The purpose of the present invention is to provide a distributed feedback semiconductor laser device, which has single-mode output characteristics, that is, the difference between the energy of the main mode and the energy of the secondary mode is at least 30dB, and has high wavelength stability, high side mode rejection ratio and Improve the space burning effect during operation. In addition, the grating structure in the distributed feedback semiconductor laser device can be defined through the laser interference lithography process and wet etching. Therefore, compared with the electron beam lithography manufacturing method, the manufacturing cost and time can be effectively reduced.
根據上述目的,本發明提出一種分佈反饋式半導體雷射裝置,其包含主動層、第一光柵層和第二光柵層。第一光柵層包含具有第一光柵週期的第一光柵結構,且第二光柵層包含具有第二光柵週期的第二光柵結構,其中第一光柵週期與第二光柵週期實質相異。主動層、第一光柵層及第二光柵層係上下堆疊而成,且分佈反饋式半導體雷射裝置之等效光柵週期為(2×P1×P2)/(P1+P2),其中P1和P2分別為第一光柵週期和第二光柵週期。 According to the above objective, the present invention provides a distributed feedback semiconductor laser device, which includes an active layer, a first grating layer and a second grating layer. The first grating layer includes a first grating structure having a first grating period, and the second grating layer includes a second grating structure having a second grating period, wherein the first grating period and the second grating period are substantially different. The active layer, the first grating layer and the second grating layer are stacked up and down, and the equivalent grating period of the distributed feedback semiconductor laser device is (2×P1×P2)/(P1+P2), where P1 and P2 These are the first grating period and the second grating period.
依據本發明的一實施例,上述第一光柵層與上述第二光柵層位於上述主動層的相同側。 According to an embodiment of the present invention, the first grating layer and the second grating layer are located on the same side of the active layer.
依據本發明的又一實施例,上述第二光柵層直接堆疊在上述第一光柵層上。 According to another embodiment of the present invention, the second grating layer is directly stacked on the first grating layer.
依據本發明的又一實施例,上述第一光柵層和上述第二光柵層分別位於上述主動層的相對兩側。 According to another embodiment of the present invention, the first grating layer and the second grating layer are respectively located on opposite sides of the active layer.
依據本發明的又一實施例,上述第一光柵週期與上述第二光柵週期的差距實質低於1奈米(nm)。 According to another embodiment of the present invention, the difference between the first grating period and the second grating period is substantially less than 1 nanometer (nm).
依據本發明的又一實施例,上述第一光柵結構與上述第二光柵結構的填充因子(filling factor)約為0.4至0.5。 According to another embodiment of the present invention, the filling factor of the first grating structure and the second grating structure is about 0.4 to 0.5.
依據本發明的又一實施例,光在上述主動層中前進時,對於上述第一光柵結構與上述第二光柵結構的光侷限因子(optical confinement factor)實質相同。 According to another embodiment of the present invention, when light travels through the active layer, the optical confinement factor for the first grating structure and the second grating structure is substantially the same.
根據上述目的,本發明另提出一種分佈反饋式半導體雷射裝置,其包含主動層和包含光柵結構的光柵層。主動層和光柵層係上下堆疊而成,且光柵結構具有週期性的高度或深度變化。 According to the above objective, the present invention further provides a distributed feedback semiconductor laser device, which includes an active layer and a grating layer including a grating structure. The active layer and the grating layer are stacked up and down, and the grating structure has periodic height or depth changes.
依據本發明的一實施例,上述光柵結構的高度變化和深度變化對應二相異正弦函數疊加後的波形。 According to an embodiment of the present invention, the height change and the depth change of the above-mentioned grating structure correspond to the superimposed waveform of two different sine functions.
依據本發明的又一實施例,上述光柵結構中微結構的高處、凹槽的深度與其構成之高度和深度變化週期是藉由全像干涉微影製程曝光時間或劑量調整。 According to another embodiment of the present invention, the height of the microstructure in the grating structure, the depth of the groove, and the height and depth variation period formed by it are adjusted by the exposure time or dose of the holographic interference lithography process.
100、200、300、400‧‧‧分佈反饋式半導體雷射裝置 100, 200, 300, 400‧‧‧Distributed feedback semiconductor laser device
110、210、310、410‧‧‧主動層 110, 210, 310, 410‧‧‧active layer
111、211、311‧‧‧多重量子井層結構 111, 211, 311‧‧‧Multiple quantum well layer structure
112、212、312‧‧‧下分離侷限異質結構 112, 212, 312‧‧‧ Lower separation limited heterostructure
113、213、313‧‧‧上分離侷限異質結構 113, 213, 313‧‧‧Limited heterostructure
120、220、320‧‧‧第一光柵層 120, 220, 320‧‧‧First grating layer
121、221、321‧‧‧第一光柵結構 121、221、321‧‧‧First grating structure
122、132、222、232、322、332‧‧‧塗層 122, 132, 222, 232, 322, 332‧‧‧coating
130、230、330‧‧‧第二光柵層 130、230、330‧‧‧Second grating layer
131、231、331‧‧‧第二光柵結構 131、231、331‧‧‧Second grating structure
140、240、340‧‧‧緩衝層 140、240、340‧‧‧Buffer layer
150、250、350‧‧‧基板 150、250、350‧‧‧Substrate
160、260、360‧‧‧包覆層 160, 260, 360‧‧‧cladding
170、270、370‧‧‧接觸層 170、270、370‧‧‧Contact layer
180、280、380‧‧‧鈍化層 180、280、380‧‧‧Passivation layer
192、292、392‧‧‧上電極層 192、292、392‧‧‧Upper electrode layer
194、294、394‧‧‧下電極層 194, 294, 394‧‧‧Lower electrode layer
420‧‧‧光柵層 420‧‧‧Grating layer
421、421’、421”‧‧‧光柵結構 421, 421’, 421"‧‧‧ grating structure
PL‧‧‧長週期 P L ‧‧‧Long cycle
PS‧‧‧短週期 P S ‧‧‧short cycle
P1、P2‧‧‧週期 P1, P2‧‧‧period
W1、W2‧‧‧弦波 W1, W2‧‧‧Sine wave
為了更完整了解實施例及其優點,現參照結合所附圖式所做之下列描述,其中:〔圖1〕為本發明實施例之分佈反饋式半導體雷射裝置的立體示意圖;〔圖2〕為〔圖1〕之分佈反饋式半導體雷射裝置的部份結構剖視圖;〔圖3〕為兩不同週期之弦波及其相加的波形示意圖; 〔圖4〕示出依據本發明實施例之分佈反饋式半導體雷射裝置中,由上述第一光柵結構與上述第二光柵結構等效之光穿透與反射頻譜;〔圖5〕示出依據本發明實施例之分佈反饋式半導體雷射裝置產生之雷射在不同溫度與不同操作電流下的發光功率特性;〔圖6〕示出依據本發明實施例之分佈反饋式半導體雷射裝置產生之雷射光在環境溫度為20℃下的發光頻譜特性;〔圖7〕為依據本發明實施例之分佈反饋式半導體雷射裝置產生之雷射光在環境溫度為20℃下,操作電流變化所造成之波長與旁模抑制比變化的量測結果;〔圖8〕示出依據本發明實施例之分佈反饋式半導體雷射裝置產生之雷射光在操作電流為60mA下,環境溫度變化所造成之波長與旁模抑制比變化的量測結果;〔圖9〕示出依據本發明實施例之分佈反饋式半導體雷射裝置產生之雷射光在不同操作電流下對應的電/光響應(E/O response)S21的量測結果;〔圖10〕示出依據本發明實施例之分佈反饋式半導體雷射裝置產生之雷射光在操作電流為60mA下對應的位元錯誤率(bit error rate;BER)和光學眼圖;〔圖11〕為本發明另一實施例之分佈反饋式半導體雷射裝置的立體示意圖;〔圖12〕為〔圖11〕之分佈反饋式半導體雷射裝置的部份結構剖視圖; 〔圖13〕為本發明另一實施例之分佈反饋式半導體雷射裝置的立體示意圖;〔圖14〕為〔圖13〕之分佈反饋式半導體雷射裝置的部份結構剖視圖;〔圖15〕為本發明另一實施例之分佈反饋式半導體雷射裝置的部份結構剖視圖;〔圖16A〕為〔圖15〕之分佈反饋式半導體雷射裝置產生之雷射光的波形示意圖;以及〔圖16B〕至〔圖16D〕分別為〔圖15〕之光柵層的不同示例。 For a more complete understanding of the embodiments and their advantages, refer to the following description in conjunction with the accompanying drawings, in which: [FIG. 1] is a three-dimensional schematic diagram of a distributed feedback semiconductor laser device according to an embodiment of the present invention; [FIG. 2] [Figure 1] is a partial structural cross-sectional view of the distributed feedback semiconductor laser device; [Figure 3] is a schematic diagram of two sine waves with different periods and their addition; [Figure 4] shows the light penetration and reflection spectra equivalent to the first grating structure and the second grating structure in the distributed feedback semiconductor laser device according to an embodiment of the present invention; [Figure 5] shows the basis The luminous power characteristics of the laser generated by the distributed feedback semiconductor laser device of the embodiment of the present invention at different temperatures and different operating currents; [FIG. 6] shows the characteristics of the laser generated by the distributed feedback semiconductor laser device according to the embodiment of the present invention The luminous spectrum characteristics of the laser light at an ambient temperature of 20°C; [Figure 7] is the result of the laser light generated by the distributed feedback semiconductor laser device according to the embodiment of the present invention at an ambient temperature of 20°C and the operating current changes The measurement results of wavelength and side-mode suppression ratio changes; [Figure 8] shows the wavelength and the wavelength of the laser light generated by the distributed feedback semiconductor laser device according to the embodiment of the present invention when the operating current is 60mA and the ambient temperature changes Measurement results of side-mode suppression ratio changes; [Figure 9] shows the corresponding electrical/optical response (E/O response) of the laser light generated by the distributed feedback semiconductor laser device according to the embodiment of the present invention under different operating currents The measurement result of S21; [Figure 10] shows the corresponding bit error rate (BER) and optics of the laser light generated by the distributed feedback semiconductor laser device according to the embodiment of the present invention at an operating current of 60mA Eye diagram; [FIG. 11] is a three-dimensional schematic diagram of a distributed feedback semiconductor laser device of another embodiment of the present invention; [FIG. 12] is a cross-sectional view of a partial structure of the distributed feedback semiconductor laser device of [FIG. 11]; [Figure 13] is a three-dimensional schematic diagram of a distributed feedback semiconductor laser device according to another embodiment of the present invention; [Figure 14] is a cross-sectional view of a partial structure of the distributed feedback semiconductor laser device of [Figure 13]; [Figure 15] Is a cross-sectional view of a part of the structure of a distributed feedback semiconductor laser device according to another embodiment of the present invention; [FIG. 16A] is a schematic diagram of the laser light generated by the distributed feedback semiconductor laser device of [FIG. 15]; and [FIG. 16B ] To [FIG. 16D] are different examples of the grating layer of [FIG. 15].
以下仔細討論本發明的實施例。然而,可以理解的是,實施例提供許多可應用的概念,其可實施於各式各樣的特定內容中。所討論、揭示之實施例僅供說明,並非用以限定本發明之範圍。 The embodiments of the present invention are discussed in detail below. However, it can be understood that the embodiments provide many applicable concepts, which can be implemented in various specific contents. The discussed and disclosed embodiments are for illustration only, and are not intended to limit the scope of the present invention.
在本文中所使用的用語僅是為了描述特定實施例,非用以限制申請專利範圍。除非另有限制,否則單數形式的「一」或「該」用語也可用來表示複數形式。此外,空間相對性用語的使用是為了說明元件在使用或操作時的不同方位,而不只限於圖式所繪示的方向。元件也可以其他方式定向(旋轉90度或在其他方向),而在此使用的空間相對性描述也可以相同方式解讀。 The terms used in this text are only for describing specific embodiments, and not for limiting the scope of patent applications. Unless otherwise restricted, the term "one" or "the" in the singular form can also be used to indicate the plural form. In addition, the use of the terms of spatial relativity is to describe the different orientations of the elements in use or operation, and is not limited to the directions shown in the drawings. Elements can also be oriented in other ways (rotated by 90 degrees or in other directions), and the description of spatial relativity used here can also be interpreted in the same way.
為了簡化和明確說明,本文可能會在各種實施例中重複使用元件符號和/或字母,但這並不表示所討論的各種實施例及/或配置之間有因果關係。 In order to simplify and clarify the description, component symbols and/or letters may be repeatedly used in various embodiments herein, but this does not mean that there is a causal relationship between the various embodiments and/or configurations discussed.
另外,在本文中可能會使用空間相對用語,例如「上方(over)」、「上(on)」、「下方(under)」、「下(below)」等等,以方便說明如圖式所繪示之一元件或一特徵與另一元件或特徵之關係。 In addition, spatial relative terms may be used in this article, such as "over", "on", "under", "below", etc., to facilitate the description of the diagram. Shows the relationship between one element or feature and another element or feature.
為方便理解本案內容,圖式可能僅繪示出完整結構的一部分,但其非意於對本發明之範圍構成任何限制。本發明所屬技術領域中具有通常知識者應可依據本文內容從圖式繪示之部分結構直接推得完整結構。 In order to facilitate the understanding of the content of this case, the drawings may only depict a part of the complete structure, but they are not intended to constitute any limitation on the scope of the present invention. Those with ordinary knowledge in the technical field to which the present invention pertains should be able to directly deduce the complete structure from the partial structure shown in the diagram based on the content of this article.
圖1為本發明實施例之分佈反饋式半導體雷射裝置100的立體示意圖。在分佈反饋式半導體雷射裝置100中,主動層110包含多重量子井(multiple quantum well;MQW)層結構111和分離侷限異質結構(separate confinement heterostructure;SCH)層112、113。多重量子井層結構111可包含交錯堆疊的n層量子井層和(n-1)或(n+1)層阻障層,其中量子井層可由砷化銦鎵(indium gallium arsenide;InGaAs)構成,而阻障層可由砷化銦鋁鎵(indium aluminum gallium arsenide;InAlGaAs)構成。每一量子井層的厚度可約為5nm,而每一阻障層的厚度可約為8.5nm。分離侷限異質結構層112、113分別位於多重量子井層結構111的上下兩側,其中分離侷限異質結構層112可由一厚度為50nm之
In0.53AlxGa(0.47-x)As層,其中x為0.36至0.44,以及一厚度為50nm之P型In0.52Al0.48As層所構成;分離侷限異質結構層113可由一厚度為50nm之In0.53AlxGa(0.47-x)As層,其中x為0.36至0.44,以及一厚度為50nm之N型In0.52Al0.48As層所構成。
FIG. 1 is a three-dimensional schematic diagram of a distributed feedback
請一併參照圖2,其為分佈反饋式半導體雷射裝置100的部份結構剖視圖。如圖1和圖2所示,第一光柵層120和第二光柵層130依序堆疊在主動層110的上方。第一光柵層120具有第一光柵結構121和塗層122,而第二光柵層130具有第二光柵結構131和塗層132。第一光柵結構121的光柵週期P1和第二光柵結構131的光柵週期P2不同。在圖2所示之實施例中,第一光柵結構121的光柵週期P1大於第二光柵結構131的光柵週期P2。在其他實施例中,第一光柵結構121的光柵週期P1可小於第二光柵結構131的光柵週期P2。第一光柵結構121與第二光柵結構131之結合的等效光柵週期為(2×P1×P2)/(P1+P2)。塗層122覆蓋第一光柵結構121且填充第一光柵結構121中的空間,而塗層132覆蓋第二光柵結構131且填充第二光柵結構131中的空間。第一光柵結構121和第二光柵結構131的折射率可分別大於塗層122、132的折射率。
Please also refer to FIG. 2, which is a cross-sectional view of a partial structure of the distributed feedback
第一光柵結構121的光柵週期P1與第二光柵結構131的光柵週期P2之間的差距可小於1nm,以確保分佈反饋式半導體雷射裝置100的單模輸出特性。此外,第一光柵結構121與第二光柵結構131的填充因子(filling
factor)可約為0.4至0.5,以增加第一光柵結構121與第二光柵結構131的光耦合強度。
The difference between the grating period P1 of the first
第一光柵結構121和第二光柵結構131的材料可以是P型磷砷化銦鎵(indium gallium arsenide phosphide;InGaAsP),而塗層122、132的材料可以是P型磷化銦(indium phosphide;InP)。在其他實施例中,第一光柵結構121、第二光柵結構131和塗層122、132可由其他材料構成。舉例而言,第一光柵結構121和第二光柵結構131可由P型磷化鋁銦鎵(aluminum indium gallium phosphide;AlInGaP)構成,而塗層122、132可由P型砷化鎵(gallium arsenide;GaAs)構成。第一光柵結構121和第二光柵結構131的厚度可以是相同或不相同,且構成第一光柵結構121和第二光柵結構131的材料也可以是相同或不相同。
The material of the first
緩衝層140位於主動層110的下方,其可由N型磷化銦構成。基板150位於緩衝層140的下方,其厚度可約為100μm,且其可由磷化銦(indium phosphide;InP)構成。包覆層160位於第二光柵層130的上方,其厚度可約為2μm,且其亦可由P型磷化銦構成。
The
在一些實施例中,在主動層110與第一光柵層120之間還可依序包含厚度約為10nm的P型InP層、厚度約為15nm的P型InGaAsP層、以及厚度約為25nm的P型InP層,且在主動層110與緩衝層140之間還可包含厚度約為10nm的N型In0.53AlxGa(0.47-x)As層,其中x為0.36至0.44。
In some embodiments, the
在包覆層160上方的元件包含接觸層170、鈍化層180和上電極層192,而在基板150下方的元件包含下電極層194。如圖1所示,接觸層170、鈍化層180和上電極層192構成脊狀波導結構。接觸層170可由高摻雜濃度之InGaAs和InGaAsP構成,鈍化層180可由氧化矽構成,而上電極層192和下電極層194可由鈦、鉑、金或其他合適金屬構成。
The elements above the
另外,依據應用需求,在分佈反饋式半導體雷射裝置100之構成雷射共振腔的兩端面可分別鍍上高反射(high-reflection)膜和抗反射(anti-reflection)膜、分別鍍上抗反射膜和高反射膜、均鍍上高反射膜、均鍍上抗反射膜、或者均不鍍膜。
In addition, according to application requirements, the two ends of the laser resonant cavity of the distributed feedback
請再參照圖2。在分佈反饋式半導體雷射裝置100中,第一光柵結構121和第二光柵結構131對於雷射共振腔的相對位置可以是對準或不對準。也就是說,在位於分佈反饋式半導體雷射裝置100之構成雷射共振腔的任一端面的第一光柵結構121和第二光柵結構131可以是完全對準、完全錯位或是介於兩者之間。
Please refer to Figure 2 again. In the distributed feedback
分佈反饋式半導體雷射裝置100的製作方式舉例如下。首先,提供基板150,接著在基板150的一平面上依序形成緩衝層140和主動層110,其中主動層110包含由下而上依序堆疊的下分離侷限異質結構112、多重量子井層結構111和上分離侷限異質結構113。之後,在主動層110上依序形成第一光柵層120和第二光柵層130。第一光柵層
120和第二光柵層130的形成方式舉例如下。首先,在主動層110上沉積光柵材料層,且接著在光柵材料層上進行雷射干涉微影製程和濕式蝕刻,以形成第一光柵結構121,之後在第一光柵結構121上形成塗層122。在其他實施例中,也可先在主動層110上形成部份塗層122及沉積光柵材料層,且接著在光柵材料層上進行雷射干涉微影製程和濕式蝕刻,以形成第一光柵結構121,之後在第一光柵結構121上形成另一部份塗層122。第一光柵層120完成後,在第一光柵層120上沉積另一光柵材料層,且接著在光柵材料層上再次進行雷射干涉微影製程和濕式蝕刻,以形成第二光柵結構131,之後在第二光柵結構131上形成塗層132。
An example of the manufacturing method of the distributed feedback
接著,在第二光柵層130上形成包覆層160和接觸層170,並定義出脊狀區域。之後,在包覆層160和接觸層170上依序形成鈍化層180和上電極層192,以在分佈反饋式半導體雷射裝置100上形成脊狀波導結構,且最後在基板150的另一平面上形成下電極層194。
Next, a
圖3為兩不同週期之弦波及其相加的波形示意圖,其中弦波W1為雷射光通過第一光柵層120後的波形,弦波W2為雷射光通過第二光柵層130後的波形。如圖3所示,弦波W1、W2均為週期性正弦波,且其週期分別為P1和P2。弦波W1、W2的合成波W1+W2具有包絡線的週期性波形,其短週期和長週期分別為PS和PL。合成波W1+W2的短週期PS和長週期PL分別為(2×P1×P2)/(P1+P2)和(2×P1×P2)/|P1-P2|。若是弦波W1、W2的週期分別為
202.16nm和201.84nm,則短週期PS和長週期PL分別約為202nm和250μm,其分別對應反饋式半導體雷射裝置100的等效光柵週期和雷射共振腔長度。依據等效光柵週期PS與發光波長λ的關係式λ=2neffPS,分佈反饋式半導體雷射裝置100產生之雷射光的波長λ可由等效折射率neff及等效光柵週期PS來決定。
3 is a schematic diagram of two sine waves of different periods and their added waveforms. The sine wave W1 is the waveform after the laser light passes through the first
請回到圖2,第一光柵結構121的厚度T1和第二光柵結構131的厚度T2決定其光侷限因子(optical confinement factor)。在第一光柵結構121和第二光柵結構131光柵週期分別為202.16nm和201.84nm下,若是第一光柵結構121的厚度T1和第二光柵結構131的厚度T2均為15nm,則第一光柵結構121和第二光柵結構131的光侷限因子分別約為0.0154和0.0087。第一光柵結構121和第二光柵結構131的侷限因子差異將導致影響第一光柵結構121與第二光柵結構131的光耦合強度。若是將第二光柵結構131的厚度T2變更為27nm,則第一光柵結構121和第二光柵結構131的光侷限因子分別變成約為0.0158和0.0158。由於第一光柵結構121和第二光柵結構131的光侷限因子變為實質相同,故兩光柵具有相同的光耦合強度。此外,第一光柵結構121和第二光柵結構131的光耦合強度約為42.8cm-1。
Please return to FIG. 2, the thickness T1 of the first
圖4為分佈反饋式半導體雷射裝置100中第一光柵結構121和第二光柵結構131等效產生之光穿透與反射頻譜量測結果。由圖4可知,穿透與反射頻譜在波長約為1.31μm(即布拉格波長1310nm)附近具有明顯的穿透與
反射光學強度改變,而在其他波長的穿透與反射光學強度則是大致維持不變。此外,若改變第一光柵結構121與第二光柵結構131的相位差,例如第一光柵結構121與第二光柵結構131的相位差由0度變更為90度,則產生的穿透與反射頻譜仍與圖4之穿透與反射頻譜相似,因此,分佈反饋式半導體雷射裝置100中,第一光柵結構121與第二光柵結構131彼此間不需要精準的相互對準。由上述可知,第一光柵結構121和第二光柵結構131等效產生之光穿透與反射頻譜具備相位移光柵的頻譜響應特性。
4 is a measurement result of light penetration and reflection spectra generated by the first
圖5為分佈反饋式半導體雷射裝置100產生之分佈反饋式雷射光在不同溫度與不同操作電流下的發光功率量測結果。經由分析圖5之量測結果可得知,分佈反饋式半導體雷射裝置100的臨界電流和特徵溫度分別約為13mA和78K,且可在環境溫度為60℃的條件下具有10mW以上的輸出功率。
FIG. 5 shows the measurement results of the luminous power of the distributed feedback laser generated by the distributed feedback
圖6為分佈反饋式半導體雷射裝置100產生之分佈反饋式雷射光在環境溫度為20℃下的發光頻譜特性。圖6的量測結果顯示出,分佈反饋式半導體雷射裝置100產生之雷射光的波長非落在禁止帶邊緣(stopband edge),而是落在布拉格波長1310nm附近,其相當於四分之一波長相位移的雷射特性。
FIG. 6 shows the emission spectrum characteristics of the distributed feedback laser light generated by the distributed feedback
圖7為在環境溫度為20℃下,操作電流變化造成之波長變化與旁模抑制比的量測結果,而圖8為在操作電流為60mA下,環境溫度變化造成之波長變化與旁模抑制
比的量測結果。圖7和圖8顯示出,在操作電流為20mA至130mA和環境溫度為20℃至80℃的條件下,分佈反饋式半導體雷射裝置100產生的雷射光的旁模抑制比均大於40dB,故具有良好的單模特性,且其每電流之波長位移量和每溫度之波長位移量分別為34pm/mA與47pm/K。
Figure 7 shows the measurement results of the wavelength change and the side-mode suppression ratio caused by the operating current change at an ambient temperature of 20°C, and Figure 8 shows the wavelength change and side-mode suppression ratio caused by the operating current at 60mA and the ambient temperature change
Ratio of measurement results. Figures 7 and 8 show that under the conditions of an operating current of 20mA to 130mA and an ambient temperature of 20°C to 80°C, the side mode rejection ratio of the laser light generated by the distributed feedback
圖9為依據本發明實施例之分佈反饋式半導體雷射裝置產生之分佈反饋式雷射光在不同操作電流為60mA下對應的小訊號電/光響應(E/O response)S21的量測結果。由圖9可知,在操作電流為20mA至80mA的-3dB頻寬均大於10GHz。 Fig. 9 is a measurement result of a small signal electrical/optical response (E/O response) S 21 corresponding to a distributed feedback laser light generated by a distributed feedback semiconductor laser device according to an embodiment of the present invention under different operating currents of 60 mA . It can be seen from Fig. 9 that the -3dB bandwidth at operating currents of 20mA to 80mA is greater than 10GHz.
進一步地,利用脈衝波形產生器(pulse pattern generator;PPG)產生(231-1)不歸零偽隨機二進制序列(pseudo-random binary sequence;PRBS),其峰對峰(peak-to-peak)偏壓為2V,並在接收端使用速率設定為32Gb/s的PIN檢光器接收光信號,且由採樣示波器顯示量測結果,而10Gb/s不歸零(non-return-to-zero;NRZ)訊號的消光比(extinction ratio)設定為5.7dB。圖10為分佈反饋式半導體雷射裝置100產生之分佈反饋式雷射光在操作電流為60mA下位元錯誤率(bit error rate;BER)與接收功率之關係和光學眼圖的量測結果。圖10顯示出,在背靠背(back-to-back;BTB)傳輸方式的傳輸速率為10Gb/s下的操作沒有發生錯誤。
Further, a pulse pattern generator (PPG) is used to generate (2 31 -1) non-return-to-zero pseudo-random binary sequence (PRBS), which is peak-to-peak The bias voltage is 2V, and the PIN detector with the rate set to 32Gb/s is used at the receiving end to receive the optical signal, and the measurement result is displayed by the sampling oscilloscope, and 10Gb/s is non-return-to-zero (non-return-to-zero; The extinction ratio of the NRZ signal is set to 5.7dB. 10 shows the relationship between the bit error rate (BER) and the received power of the distributed feedback laser generated by the distributed feedback
圖11為本發明另一實施例之分佈反饋式半導體雷射裝置200的立體示意圖。如圖11所示,分佈反饋式半
導體雷射裝置200包含主動層210、第一光柵層220、第二光柵層230、緩衝層240、基板250、包覆層260、接觸層270、鈍化層280、上電極層292和下電極層294,其中主動層210包含多重量子井層結構211和分別位於多重量子井層結構211之相對兩側的下分離侷限異質結構212和上分離侷限異質結構213,第一光柵層220包含第一光柵結構221和塗層222,而第二光柵層230包含第二光柵結構222和塗層232。請一併參照圖12,其為分佈反饋式半導體雷射裝置200的部份結構剖視圖。如圖11和圖12所示,第一光柵層220和第二光柵層230依序堆疊在主動層210的下方,其中第一光柵結構221和第二光柵結構231的光柵週期不同。在圖12所示之實施例中,第一光柵結構221的光柵週期P1大於第二光柵結構231的光柵週期P2。在其他實施例中,第一光柵結構221的光柵週期P1可小於第二光柵結構231的光柵週期P2。第一光柵結構221與第二光柵結構231之結合的等效光柵週期為(2×P1×P2)/(P1+P2)。塗層222覆蓋第一光柵結構221且填充第一光柵結構221中的空間,而塗層232覆蓋第二光柵結構231且填充第二光柵結構231中的空間。第一光柵結構221和第二光柵結構221的折射率可分別大於塗層222、232的折射率。
FIG. 11 is a three-dimensional schematic diagram of a distributed feedback
第一光柵結構221和第二光柵結構231的材料可以是N型磷砷化銦鎵,而塗層222、232的材料可以是N型磷化銦。在其他實施例中,第一光柵結構221、第二光柵結構231和塗層222、232可以是由其他材料構成。舉例而
言,第一光柵結構221和第二光柵結構231可由N型磷化鋁銦鎵構成,而塗層222、232可由N型砷化鎵構成。
The material of the first
緩衝層240位於第二光柵層230的上方,其可由N型磷化銦構成。基板250位於緩衝層240的下方,其厚度可約為100μm,且其可由磷化銦構成。包覆層260位於緩衝層240的上方,其厚度可約為2μm,且其可由P型磷化銦構成。
The
在一些實施例中,在主動層210與第一光柵層220之間還可包含厚度約為10nm的N型In0.53AlxGa(0.47-x)As層,且在主動層210與包覆層260之間還可包含厚度約為50nm的P型In0.53AlxGa(0.47-x)As層,其中x為0.36至0.44。
In some embodiments, an N-type In 0.53 Al x Ga (0.47-x) As layer with a thickness of about 10 nm may be further included between the
接觸層270、鈍化層280、上電極層292和上電極層294的配置可分別與分佈反饋式半導體雷射裝置100中接觸層170、鈍化層180、上電極層192和上電極層194的配置相似,故相關說明請參照先前段落,在此不贅述。
The configuration of the contact layer 270, the
同樣地,依據應用需求,在分佈反饋式半導體雷射裝置200之構成雷射共振腔的兩端面可分別鍍上高反射膜和抗反射膜、分別鍍上抗反射膜和高反射膜、均鍍上高反射膜、均鍍上抗反射膜、或者均不鍍膜。此外,在分佈反饋式半導體雷射裝置200中,第一光柵結構221和第二光柵結構231對於雷射共振腔的相對位置可以是對準或不對準。
Similarly, according to application requirements, the two ends of the laser resonant cavity of the distributed feedback
分佈反饋式半導體雷射裝置200的製作方式舉例如下。首先,提供基板250,接著在基板250的一平面上
依序形成緩衝層240、第二光柵層230和第一光柵層220。第一光柵層220和第二光柵層230的形成方式舉例如下。首先,在緩衝層240上沉積光柵材料層,且接著在光柵材料層上定義出光柵結構區域,並進行雷射干涉微影製程和濕式蝕刻,以形成第二光柵結構231,之後在第二光柵結構231上形成塗層232。在其他實施例中,也可先在緩衝層240上形成部份塗層232及沉積光柵材料層,且接著在光柵材料層上進行雷射干涉微影製程和濕式蝕刻,以形成第二光柵結構231,之後在第二光柵結構231上形成另一部份塗層232。第二光柵層230完成後,在第二光柵層230上沉積另一光柵材料層,且接著在光柵材料層上進行雷射干涉微影製程和濕式蝕刻,以形成第一光柵結構221,之後在第一光柵結構221上形成塗層222。
An example of the manufacturing method of the distributed feedback
之後,在第一光柵層220上形成主動層210,其包含由下而上依序堆疊的下分離侷限異質結構212、多重量子井層結構211和上分離侷限異質結構213。然後,在主動層210上形成包覆層260和接觸層270,並定義出脊狀區域,接著在包覆層260和接觸層270上依序形成鈍化層280和上電極層292,以在分佈反饋式半導體雷射裝置200上形成脊狀波導結構,且最後在基板250的另一平面上形成下電極層294。
After that, an
圖13為本發明另一實施例之分佈反饋式半導體雷射裝置300的立體示意圖。如圖13所示,分佈反饋式半導體雷射裝置300包含主動層310、第一光柵層320、第二
光柵層330、緩衝層340、基板350、包覆層360、接觸層370、鈍化層380、上電極層392和下電極層394,其中主動層310包含多重量子井層結構311和分別位於多重量子井層結構311之相對兩側的下分離侷限異質結構312和上分離侷限異質結構313,第一光柵層320包含第一光柵結構321和塗層322,而第二光柵層330包含第二光柵結構322和塗層332。請一併參照圖14,其為分佈反饋式半導體雷射裝置300的部份結構剖視圖。如圖13和圖14所示,第一光柵層320和第二光柵層330分別位於主動層310的上方和下方,且第一光柵結構321和第二光柵結構331的光柵週期不同。在圖14所示之實施例中,第一光柵結構321的光柵週期P1大於第二光柵結構331的光柵週期P2。在其他實施例中,第一光柵結構321的光柵週期P1可小於第二光柵結構331的光柵週期P2。第一光柵結構321與第二光柵結構331之結合的等效光柵週期為(2×P1×P2)/(P1+P2)。塗層322覆蓋第一光柵結構321且填充第一光柵結構321中的空間,而塗層332覆蓋第二光柵結構331且填充第二光柵結構331中的空間。第一光柵結構321和第二光柵結構321的折射率可分別大於塗層322、332的折射率。
FIG. 13 is a three-dimensional schematic diagram of a distributed feedback
第一光柵結構321的材料可以是P型磷砷化銦鎵,而塗層322的材料可以是P型磷化銦。此外,第二光柵結構331的材料可以是N型磷砷化銦鎵,而塗層332的材料可以是N型磷化銦。在其他實施例中,第一光柵結構321、第二光柵結構331和塗層322、332可以是由其他材料構
成。舉例而言,第一光柵結構321和第二光柵結構331可分別由P型磷化鋁銦鎵和N型磷化鋁銦鎵構成,而塗層322、332可分別由P型砷化鎵和N型砷化鎵構成。
The material of the first
緩衝層340位於第二光柵層330的下方,其可由N型磷化銦構成。基板350位於緩衝層340的下方,其厚度可約為100μm,且其可由磷化銦構成。包覆層360位於第一光柵結構320層的上方,其厚度可約為2μm,且其亦可由磷化銦構成。
The
在一些實施例中,在主動層310與第一光柵層320之間還可包含厚度約為50nm的P型In0.53AlxGa(0.47-x)As層,且在主動層310與緩衝層320之間還可包含厚度約為10nm的N型In0.53AlxGa(0.47-x)As層,其中x為0.36至0.44。
In some embodiments, a P-type In 0.53 Al x Ga (0.47-x) As layer with a thickness of about 50 nm may be further included between the
接觸層370、鈍化層380、上電極層392和上電極層394的配置可分別與分佈反饋式半導體雷射裝置100中接觸層170、鈍化層380、上電極層392和上電極層194的配置相似,故相關說明請參照先前段落,在此不贅述。
The configuration of the
同樣地,依據應用需求,在分佈反饋式半導體雷射裝置300之構成雷射共振腔的兩端面可分別鍍上高反射膜和抗反射膜、分別鍍上抗反射膜和高反射膜、均鍍上高反射膜、均鍍上抗反射膜、或者均不鍍膜。此外,在分佈反饋式半導體雷射裝置300中,第一光柵結構321和第二光柵結構331對於雷射共振腔的相對位置可以是對準或不對準。
Similarly, according to application requirements, the two ends of the laser resonant cavity of the distributed feedback
分佈反饋式半導體雷射裝置300的製作方式舉例如下。首先,提供基板350,接著在基板350的一平面上依序形成緩衝層340和第二光柵層330。第二光柵層330的形成方式可與分佈反饋式半導體雷射裝置200之第二光柵層230的形成方式相似。之後,在第二光柵層330上形成主動層310,其包含由下而上依序堆疊的下分離侷限異質結構312、多重量子井層結構311和上分離侷限異質結構313。然後,在主動層210上第一光柵層320,且接著在第一光柵層320上形成包覆層360和接觸層370,並定義出脊狀區域。第一光柵層320的形成方式可與分佈反饋式半導體雷射裝置100之第一光柵層120的形成方式相似。之後,在包覆層360和接觸層370上依序形成鈍化層380和上電極層392,以在分佈反饋式半導體雷射裝置300上形成脊狀波導結構,且最後在基板350的另一平面上形成下電極層394。
An example of the manufacturing method of the distributed feedback
分佈反饋式半導體雷射裝置100、200、300的只要差異在於,分佈反饋式半導體雷射裝置100中的第一光柵層120和第二光柵層130是在主動層110的上方,分佈反饋式半導體雷射裝置200中的第一光柵層220和第二光柵層230是在主動層210的下方,而分佈反饋式半導體雷射裝置300中的第一光柵層320和第二光柵層330是分別在主動層310的上方和下方。然而,由於將雙層光柵層設置在主動區的上側、下側或是相對兩側,所得到的等效折射率均相同,故分佈反饋式半導體雷射裝置100、200、300的相位移特性亦相同。特別地,在分佈反饋式半導體雷射裝置200中,
由於第一光柵層220和第二光柵層230是在主動層210的下方,故在主動層210上方的結構厚度變薄,使得漏電流和臨界電流值亦進一步降低,提升雷射元件發光效能。
The difference between the distributed feedback
圖15為本發明另一實施例之分佈反饋式半導體雷射裝置400的部份結構剖視圖。在圖15中,光柵層420位於主動層410上且包含振幅莫列波光柵結構,此光柵結構可藉由兩次雷射全像干涉微影步驟而產生,其中第一次曝光和第二次曝光所產生的干涉條紋週期不同。請一併參照第16A至16D圖,其中圖16A為振幅莫列波光柵結構的波形示意圖,而圖16B至16D為分別為光柵層420的不同示例。圖16A所示之波形與圖3所示之合成波W1+W2的波形相似,其亦包含短週期PS和長週期PL。圖16B至16D所示之光柵結構421、421’、421”的每一者為光柵層420的一部分且為振幅莫列波光柵結構。光柵結構421、421’、421”的差異在於,光柵結構421具有週期性的高度和深度變化,光柵結構421’僅具有週期性的深度變化,而光柵結構421”僅具有週期性的高度變化。上述週期性的高度變化和深度變化對應二相異正弦函數疊加後的波形,例如圖3所示之弦波W1、W2疊加後的波形,即合成波W1+W2的波形。此外,每一光柵結構421、421’、421”中微結構的高處、凹槽的深度與其構成之高度和深度變化週期(即長週期PL)可藉由全像干涉微影製程曝光時間或劑量調整。
15 is a cross-sectional view of a partial structure of a distributed feedback
每一光柵結構421、421’、421”可再由折射率較低的塗層覆蓋之。依據分佈反饋式半導體雷射裝置400的
種類,光柵結構421、421’、421”的材料可以是P型或N型磷砷化銦鎵,而塗層的材料可以是P型或N型磷化銦。另外,在其他實施例中,光柵層420可以是位於主動層410的下方。
Each
至於分佈反饋式半導體雷射裝置400之未繪示於圖15中的其他元件,例如緩衝層、基板、包覆層、接觸層、鈍化層、上電極層和下電極層等,可分別與前述分佈反饋式半導體雷射裝置100之緩衝層140、基板150、包覆層160、接觸層170、鈍化層180、上電極層192和下電極層194相似,或者分別與分佈反饋式半導體雷射裝置200之緩衝層240、基板250、包覆層260、接觸層270、鈍化層280、上電極層292和下電極層294相似,故相關說明請參照先前段落,在此不贅述。
As for the other components of the distributed feedback
雖然本發明已以實施例揭露如上,然其並非用以限定本發明,任何所屬技術領域中具有通常知識者,在不脫離本發明的精神和範圍內,當可作些許的更動與潤飾,故本發明的保護範圍當視後附的申請專利範圍所界定者為準。 Although the present invention has been disclosed in the above embodiments, it is not intended to limit the present invention. Anyone with ordinary knowledge in the relevant technical field can make some changes and modifications without departing from the spirit and scope of the present invention. The scope of protection of the present invention shall be subject to those defined by the attached patent scope.
100‧‧‧分佈反饋式半導體雷射裝置 100‧‧‧Distributed feedback semiconductor laser device
110‧‧‧主動層 110‧‧‧Active layer
111‧‧‧多重量子井層結構 111‧‧‧Multiple quantum well layer structure
112‧‧‧下分離侷限異質結構 112‧‧‧Lower separation restricted heterostructure
113‧‧‧上分離侷限異質結構 113‧‧‧Limited heterostructure on separation
120‧‧‧第一光柵層 120‧‧‧First grating layer
121‧‧‧第一光柵結構 121‧‧‧First grating structure
122、132‧‧‧塗層 122、132‧‧‧Coating
130‧‧‧第二光柵層 130‧‧‧Second grating layer
131‧‧‧第二光柵結構 131‧‧‧Second grating structure
140‧‧‧緩衝層 140‧‧‧Buffer layer
150‧‧‧基板 150‧‧‧Substrate
160‧‧‧包覆層 160‧‧‧Coating
170‧‧‧接觸層 170‧‧‧Contact layer
180‧‧‧鈍化層 180‧‧‧Passivation layer
192‧‧‧上電極層 192‧‧‧Upper electrode layer
194‧‧‧下電極層 194‧‧‧Lower electrode layer
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