TW202024785A - Determination method, exposure method, exposure apparatus, and method of manufacturing article both ensuring overlay accuracy of the upper and lower layers and joint accuracy of the adjacent irradiation regions in an optical lithography process - Google Patents

Abstract

Provided is a technique of joint exposure that is advantageous for both ensuring the overlay accuracy of the upper and lower layers and the joint accuracy of the adjacent irradiation regions. This determination method is to determine the amount of correction for the alignment of the first and second irradiated regions of a substrate for joint exposure. Joint exposure exposes the first irradiated region of the substrate to form a first image and exposes a second irradiated region that overlays a part of the first irradiated region to form a second image, so that an image that overlaps the first and second images is obtained, therefore a first position offset that is a position offset amount used between overlapping marks of the upper and lower layers is calculated, and a second position offset that is a position offset amount used between measurement marks for aligning the joint position of the first and second irradiated regions is calculated. The correction amount of the first image in the joint area where the first and second irradiated regions overlap is determined by the position offset amount from the addition of the first position offset amount and the predetermined ratio of the second position offset, and the correction amount of the second image in the joint area is determined by subtracting the position offset amount of the second position offset amount relative to the remaining ratio of the predetermined ratio from the first position offset amount.

Description

Determination method, exposure method, exposure device and article manufacturing method

The present invention relates to a determination method, an exposure method, an exposure device, and an article manufacturing method.

Semiconductors, liquid crystal panels, etc. are manufactured through a photolithography process. In the photolithography process, a scanning type exposure apparatus is used that scans an exposure area on a substrate (glass substrate, wafer) coated with a photosensitizer via a projection optical system and projects the pattern of the original plate (mask). In recent years, the enlargement of displays such as liquid crystal panels has progressed, and it is necessary to expose glass substrates exceeding 2 m square, for example. In order to cope with such a large substrate, instead of exposing all of the exposure areas on the substrate at once, the exposure areas on the substrate are divided into several exposure areas and exposed. At this time, junction exposure is performed in which a part of adjacent irradiation regions are overlapped and exposed.

In the bonding exposure, when the overlap (overlap) error in the region where the adjacent irradiation regions overlap each other (the bonding region) becomes large, unevenness occurs in the bonding region. Patent Document 1 discloses a technique that specializes in one of the amount of positional deviation between the upper and lower layers in the bonding area or the amount of positional deviation between adjacent irradiation areas, and the method for reducing the The offset correction amount, which is used for exposure. In addition, Patent Document 2 discloses a technique for correcting the position of the irradiation area using a plurality of irradiation areas constituting one device as a unit. The position of the irradiation area is corrected so as to minimize the overlap accuracy difference in the overlapped portion of the plurality of irradiation areas constituting one device. Prior art literature Patent literature

Patent Document 1: Japanese Patent Application Publication No. 07-321026 Patent Document 2: Japanese Patent Application Publication No. 09-306818

In the case of joint exposure, the positional deviation between adjacent irradiation areas is the most important index that determines the performance of the manufactured device. Nevertheless, in previous corrections, only the positional offset between the upper and lower layers was corrected, and the positional offset between adjacent irradiation areas was not considered, or only the positional offset between adjacent irradiation areas was corrected without consideration. The position offset between the upper and lower layers. In response to this, a method of preferentially correcting the positional deviation between adjacent irradiation regions (joint priority correction) has been proposed. According to this technique, although the effect of correcting the positional shift between the upper and lower layers is weak, it can meet the required accuracy of conventional joint exposure.

However, with the increase in the size of the substrate and the miniaturization of the pattern, both the accuracy of the overlap of the upper and lower layers and the accuracy of the bonding of the adjacent irradiation area have become higher. That is, a technique for simultaneously correcting the displacement of the upper and lower layers and the positional displacement between adjacent irradiation areas with high accuracy is required.

The object of the present invention is to provide a technique of bonding exposure that is advantageous for simultaneously ensuring the overlap accuracy of the upper and lower layers and the bonding accuracy of the adjacent irradiation area.

According to the first aspect of the present invention, there is provided a determination method for determining the amount of correction related to the alignment of the first and second shot areas of the substrate for bonding exposure, in which the first shot area is exposed To form a first image, expose a second irradiation area overlapping a part of the first irradiation area to form a second image, and obtain an image in which the first image and the second image are superimposed. The characteristics of the aforementioned determination method This is to obtain the first positional shift amount as the positional shift amount between the superimposed marks for superimposing the upper and lower layers, and obtain the positional shift amount for performing the alignment of the first irradiation area and the second irradiation area The second position shift amount of the position shift amount between the joint position measurement marks is determined by adding a predetermined ratio of the second position shift amount to the first position shift amount as The correction amount of the first image in the junction area where the first irradiation area and the second irradiation area overlap is obtained by subtracting the second position shift of the remaining ratio relative to the predetermined ratio from the first position shift amount The amount of positional deviation obtained by the measurement is determined as the correction amount of the second image in the joint area.

According to the present invention, it is possible to provide a technique of bonding exposure that is advantageous for simultaneously ensuring the overlap accuracy of the upper and lower layers and the bonding accuracy of the adjacent irradiation area.

Hereinafter, embodiments of the present invention will be described in detail with reference to the drawings.

<First Embodiment> FIG. 1 shows a schematic configuration of the exposure apparatus in the embodiment. This exposure apparatus is, for example, a scanning exposure apparatus of a mirror projection method using a projection optical system. In addition, in this specification and the drawings, the direction is expressed in the XYZ coordinate system in which the direction parallel to the substrate holding surface by the substrate mounting table is the XY plane. The directions parallel to the X axis, Y axis, and Z axis in the XYZ coordinate system are called X direction, Y direction, and Z direction. In addition, the scanning direction of the original plate and the substrate during exposure is the Y direction.

The exposure device includes an original plate mounting table 31 on which an original plate 30 (mask) is mounted, a substrate mounting table 61 on which a substrate 60 (for example, a glass plate) is mounted, an illumination optical system 10 that illuminates the original plate 30, and a pattern of the original plate 30 is projected onto the substrate 60 of the projection optical system 40. The original plate 30 and the substrate 60 are disposed at positions that are approximately optically conjugate (object plane and image plane of the projection optical system 40) via the projection optical system 40. Between the illumination optical system 10 and the original plate mounting table 31, a slit imaging system 20 that performs shaping of exposure light is arranged. In addition, when scanning and exposing the substrate 60, an X-shielding plate 50 for sequentially exposing a part of the pattern image of the original plate 30 in different areas on the surface of the substrate 60 is arranged on the projection optical system 40 and the substrate carrier. Set between 61. The control part 70 controls the driving of each part of the exposure apparatus.

The illumination optical system 10 may include a light source unit such as an ultra-high pressure mercury lamp, a wavelength selection filter, a lens group, a shutter, and the like. The illumination optical system 10 irradiates light of a wavelength suitable for exposure toward the slit imaging system 20. The slit imaging system 20 has a slit (not shown), and shapes the incident light from the illumination optical system 10 into an exposure width that satisfies the required exposure amount at a certain stage scanning speed (for example, the upper limit of the scanning speed, etc.).

Under the control of the control unit 70, the original plate mounting table 31 on which the original plate 30 is mounted is scanned in the Y direction by a driving mechanism not shown. A plurality of reflecting mirrors 32 are arranged in the original plate mounting table 31. The plurality of reflecting mirrors 32 respectively reflect the measurement light from the interferometer 33 arranged outside the original plate mounting table 31. The interferometer 33 receives the reflected measurement light, and constantly monitors and measures the position of the original plate mounting table 31. The control unit 70 controls the position and speed of the original plate mounting table 31 based on the measurement result by the interferometer 33.

The projection optical system 40 includes a mirror and a lens, and projects the pattern formed on the original plate 30 onto the substrate 60 by reflecting and refracting exposure light. In addition, under the control of the control unit 70, the mirror and the lens are driven in the X, Y, and Z directions by a driving mechanism not shown, and arbitrary magnification and displacement are generated.

In the exposure apparatus in this embodiment, the first shot area of the substrate is exposed to form a first image, and the second shot area overlapping a part of the first shot area is exposed to form a second image, and the The first image and the second image are superimposed on the joint exposure. In order to perform this joint exposure, the exposure apparatus includes an X-shielding plate 50. In addition, in the following description, the "irradiation area" is also simply referred to as the "irradiation area". The X shading plate 50 can be driven in the Y direction by a driving mechanism not shown under the control of the control unit 70. By moving the X-shielding plate 50 horizontally in the exposure light path to change the position where the exposure light is shielded, the exposure light shaped by the slit imaging system 20 is obliquely shielded with respect to the scanning direction, thereby controlling the amount of exposure accumulated on the substrate . Thereby, it is possible to control the bonding exposure for the bonding shot area layout as shown in FIG. 2(a). That is, as shown in FIG. 2(b), the illuminance distribution of the area outside the junction area in the irradiation area S1 (first irradiation area), that is, the non-bonding area is set to 100%, and the illuminance at each X position of the junction area The distribution is set to a negative slope. For example, from one end to the other end of the joint area in the X direction, the amount of exposure (illuminance) is linearly attenuated from 100% to 0%. In addition, as shown in (c) of FIG. 2, the illuminance distribution of the non-joining area of the irradiation area S2 (second irradiation area) is set to 100%, and the illuminance distribution of each X position of the joining area is set to a positive slope. For example, from one end of the joint area in the X direction to the other end, the exposure amount is linearly increased from 0% to 100%. In this way, when the irradiated area S1 is exposed and the irradiated area S2 is exposed, the exposure amount in the joint area is cross faded. As a result, as shown in (d) of FIG. 2, the cumulative illuminance distribution for the junction area and the non-junction area is equalized at 100%.

Under the control of the control unit 70, the substrate mounting table 61 on which the substrate 60 is mounted is scanned in the X, Y, and Z directions by a drive mechanism not shown. In the substrate mounting table 61, a plurality of reflecting mirrors 62 are arranged. The plurality of reflecting mirrors 62 respectively reflect the measurement light from the interferometer 63 arranged outside the substrate mounting table 61. The interferometer 63 receives the reflected measurement light, and constantly monitors and measures the position of the substrate mounting table 61. The control unit 70 controls the position and speed of the substrate mounting table 61 based on the result of the measurement by the interferometer 63.

An alignment scope 80 detects the alignment mark of the substrate 60 through the original plate 30 and the projection optical system 40. On the other hand, an off-axis scope 81 is disposed under the projection optical system 40 and detects the alignment mark of the substrate 60 without passing through the original plate 30 and the projection optical system 40.

The control unit 70 functions as a processing unit that performs a process of determining a correction amount related to the alignment of the irradiation area S1 and the irradiation area S2, and also functions as a control unit that performs junction exposure control. The control unit 70 may include a data holding unit 71, a drive amount calculation unit 72, and a drive instruction unit 73 as its functional configuration. The data holding section 71 holds the offsets in the X and Y directions of one or more points in the irradiation area measured from the mark exposed on the substrate by the exposure device, the drive bias of each drive shaft, and the drive parameters such as sensitivity. Various measurement data obtained by the exposure device. Based on the data held in the data holding section 71, the drive amount calculation section 72 uses a general statistical method to calculate various correction components such as positional offset, rotation, and magnification in the X, Y, and Z directions. In addition, the drive amount calculation unit 72 determines the drive instruction amount of each axis based on the drive parameter and the calculated correction component. The drive instruction unit 73 uses the drive instruction amount for each drive mechanism determined by the drive amount calculation unit 72 to output drive instructions for each drive mechanism. In addition, the control unit 70 may be constituted by a computer device including a CPU (Central Processing Unit) and a memory as its hardware configuration, for example. In this case, the data holding unit 71 can be realized by a memory, and the drive amount calculation unit 72 and the drive instruction unit 73 can be realized by a CPU.

(Example 1) With reference to the flowchart of FIG. 3, the process of determining the correction amount related to the alignment of the shot area S1 and the shot area S2 for bonding exposure and the outline of the exposure process based on the determined correction amount will be described. First, the first bonding exposure is performed for the shot area S1 and the shot area S2 (S101). The first bonding exposure is exposure for determining the correction amount. The substrate used at this time may be a substrate for production or a substrate for testing. Next, the overlap (superimposition) error of the upper and lower layers in the joining area and the positional deviation of the irradiation area S1 and the irradiation area S2 (the arrangement shift of the left and right irradiation areas) are measured (S102). This measurement may be performed using a measuring device outside the exposure apparatus, or may be performed using an alignment meter 80 or an off-axis meter 81.

The control unit 70 calculates (determines) the correction amount based on the measurement result (S103). The calculated correction amount is stored as a correction parameter at the time of exposure in, for example, the data holding unit 71. As the correction parameters, there are displacement, rotation, magnification, etc. of the irradiation area. As the control object of the exposure device, there are control data of the stage, optical system, etc., and the calculated correction amount can be converted into a correction value suitable for these parameters.

After that, the second exposure (the subsequent bonding exposure) is performed. The second exposure referred to here may be a full exposure using a substrate for production (S104). Here, the control unit 70 reflects the correction value and performs bonding exposure.

Hereinafter, the method of determining the correction amount related to the alignment of the irradiation zone S1 and the irradiation zone S2 related to the above-mentioned S101 to S103 will be explained in detail. FIG. 4 is a schematic diagram of the shot area S1 exposed in S101. In this embodiment, the measurement for the overlap of the upper and lower layers and the measurement for the alignment of the irradiation area S1 and the irradiation area S2 are performed using, for example, a box in box mark. In FIG. 4, in the lower layer of the joining area, an out box mark 91 (base mark) constituting an overlap mark has been formed. At the time of exposure of the irradiation zone S1, an in box mark 90 (first mark) for positioning with the outer box mark 91 is formed. In addition, at the time of exposure of the irradiation zone S1, an outer box mark 92 (second mark) as a bonding position measurement mark for aligning the irradiation zone S1 and the irradiation zone S2 is also formed in the bonding region.

As described above, in the irradiation area S1, from one end to the other end in the X direction of the joining area, the exposure amount (illuminance) linearly attenuates from 100% to 0%. As shown in FIG. 4, each mark formed in the bonding area is arranged at a predetermined position x1 in the direction (X direction) of the repeated width of the irradiation area S1 and the irradiation area S2, and the attenuation rate of the exposure amount at the position x1 is set Is a%. Based on the difference in the positions of the outer box mark 91 formed in the lower layer and the inner box mark 90 formed in the upper layer, an overlap error (superimposition error) is detected. However, at the time point when the irradiation area S1 is exposed, the illuminance at the position x1 is only (100-a)%, so the inner box mark 90 and the outer box mark 92 are not completely formed.

FIG. 5 is a schematic diagram of the shot area S2 exposed in S101. In the exposure of the irradiation zone S2, in order to align with the outer box mark 91 as the base mark, the inner box mark 93 (third mark) is formed so as to overlap with the inner box mark 90. In addition, at the time of exposure of the irradiation zone S2, at a position overlapping with the outer box mark 92, an inner box mark 94 (fourth mark) as a joint position measurement mark for alignment of the irradiation zone S1 and the irradiation zone S2 is also formed . The overlap error can be detected based on the difference in the positions of the outer box mark 91 formed in the lower layer and the inner box mark 93 formed in the upper layer. However, the illuminance at position x1 when the irradiation area S2 is exposed is a%, so the total illuminance of the inner box mark 90 in Figure 4 with the same coordinates as the ideal position becomes (100-a)+a=100%, which is completely form. By overlapping the inner box mark 90 and the inner box mark 93 in this way, as shown in FIG. 6, a composite inner box mark 95 (composite mark) is formed. Therefore, the measured positional shift amount of the combined inner box mark 95 relative to the outer box mark 91 is obtained as the first positional shift amount between the overlap marks (91, 95) for superimposing the upper and lower layers. The position offset.

Similarly, the illuminance of the inner box mark 94 formed in the irradiation area S2 is not 100%. The outer box mark 92 of FIG. 4 and the inner box mark 94 of FIG. 5 also have the same ideal position coordinates, so these marks form a sandwiched positional relationship. Therefore, the mark 96 shown in FIG. 6 is measured as the irradiation area S1 and the irradiation The second position shift amount of the position shift amount of the area S2. The outer box mark 92 and the inner box mark 94 may adopt the gray-tone box-in-box mark as shown in FIG. 7. By studying the exposure light transmittance of each mark on the mask, the positional deviation of the irradiation area S1 and the irradiation area S2 can be measured with high accuracy. In addition, for example, Japanese Patent Application Laid-Open No. 2018-10211 discloses the details of the box mark in the gray box.

The positional shift amount in the X direction of the inner box mark 90 (FIG. 4) as the superimposed mark of the upper layer with respect to the outer box mark 91 of the superimposed mark of the lower layer is set to Δ1. That is, Δ2 represents the positional shift amount of the irradiation area S1 relative to the lower layer. In addition, the positional shift amount in the X direction of the inner box mark 93 (FIG. 5) that is the superimposed mark of the upper layer relative to the outer box mark 91 that is the superimposed mark of the lower layer is Δ2. That is, Δ2 represents the positional shift amount of the irradiation area S2 relative to the lower layer. Therefore, in S102, the amount of offset in the X direction of the upper composite inner box mark 95 with a total illuminance of 100% by the overlap of the left and right irradiated areas relative to the lower outer box mark 91 is obtained by the following equation, namely The first position shift amount M1.

In addition, according to the mark 96, the position shift amount of the inner box mark 94 exposed in the shot area S2 relative to the outer box mark 92 exposed in the shot area S1 (the left and right shot area arrangement shift amount) is obtained by the following formula, namely The second position shift amount M2 (S102).

Here, in order to simplify the description, consider a case where the X position x1 formed by each mark in the bonding area is set as the center of the bonding area (the center of the overlapping width direction of the irradiation area S1 and the irradiation area S2). In this case, a=50%, so the formula (1) is as follows.

According to the equations (2) and (3), Δ1 and Δ2 are as follows.

Thus, the position shift amount obtained by adding a predetermined ratio (for example, 50%) of the second position shift amount M2 to the first position shift amount M1 can be determined as the first image of the irradiation area S1 in the joint area. The amount of correction. In addition, the positional deviation amount obtained by subtracting the second positional deviation amount M2 of the predetermined ratio (for example, 100%-50%=50%) from the first positional deviation amount M1 can be determined as the engagement The correction amount of the second image in the irradiation area S2 in the area. The above description can be generalized when the X position x1 formed by each mark in the joining area is arbitrary.

另外，使用從第1次的曝光結果得到的位置偏移量，將基於照射區S2的曝光的X位置x1的校正量設為下式。

Here, using the position shift amount obtained from the result of the first exposure (S101), the correction amount of the X position x1 based on the exposure of the shot region S1 is set as the following equation.

In addition, using the position shift amount obtained from the first exposure result, the correction amount of the X position x1 based on the exposure of the shot region S2 is set as the following equation.

Thus, using equations (6) and (7), the correction amount in the X direction of the upper and lower layers at the X position x1 becomes the following equation.

When substituting equations (1) and (2) into equation (8), it is as follows.

In addition, the alignment offset measurement mark of the left and right irradiation area after the overlap, that is, the correction amount of the mark 96 in the X direction is expressed by the following equation.

第2次的曝光時的校正量：

⇒校正殘差：0 ･左右照射區的排列偏移 第1次的曝光的偏移量：Δ1-Δ2 第2次的曝光的校正量：Δ1-Δ2 ⇒校正殘差：0As an effect after the above-mentioned correction, in the second exposure (S104), correction without correction residuals can be performed as described below. ･The offset of the first exposure of the superimposed upper and lower layers:

Correction amount during the second exposure:

⇒Correction residual: 0 ･The alignment of the left and right irradiated areas is offset. The offset of the first exposure: Δ1-Δ2 The correction amount of the second exposure: Δ1-Δ2 ⇒The correction residual: 0

However, depending on production conditions such as processing characteristics and mask manufacturing costs, there may be cases in which marks cannot be arranged in the bonding area as in the first embodiment. At this time, it is not possible to directly detect the deviation of the upper and lower layers in the bonding area and the deviation of the arrangement of the left and right irradiation areas based on the measurement result of the mark. In the following Example 2 and Example 3, it is explained that based on the position offset information detected from the mark outside the bonding area, the offset of the upper and lower layers in the bonding area and the offset of the left and right irradiation area arrangement can be estimated. An example of the correction method of Embodiment 1.

(Example 2) As shown in Fig. 8, the layout of the exposure area is the same as that of the first embodiment. A mark C1 (joint position measurement mark on the side of the first irradiation area) capable of detecting the deviation of the absolute position of the specific part of the irradiation area is formed in a position outside the joining area in the irradiation area S1. In addition, a mark B1 (overlapping mark on the side of the first irradiation area) capable of detecting the relative positional deviation of the upper and lower layers of the specific part is formed at a position outside the bonding area in the irradiation area S1. Similarly, a mark C2 (joint position measurement mark on the side of the second irradiation area) capable of detecting the deviation of the absolute position of the specific part of the irradiation area is formed at a position outside the joint area in the irradiation area S2. In addition, a mark B2 (superimposed mark on the side of the second irradiation area) capable of detecting the relative positional deviation of the upper and lower layers of the specific part is formed at a position outside the bonding area in the irradiation area S2.

The arrangement positions of the marks C1 and C2 in the irradiation area are adjusted so that the center positions of the ideal positions of the marks C1 and C2 formed after the bonding exposure are within the bonding area. At the center position, a virtual mark C3 (second virtual mark) targeted for detection of the relative positional deviation of the exposure results of the shot area S1 and the shot area S2 at the center position is set.

Similarly, the arrangement positions of the marks B1 and B2 in the irradiation area are adjusted so that the center positions of the ideal positions of the marks B1 and B2 formed after the bonding exposure are within the bonding area. At the center position, a virtual mark B3 (first virtual mark) is set for the purpose of detection of the combined exposure result of the irradiation zone S1 and the irradiation zone S2 at the center position and the relative position shift of the lower layer.

If the detection amounts of the imaginary mark C3 and the imaginary mark B3 are obtained separately, the same correction method as in the first embodiment can be used. The amount of labeled detection Q C1, _C1 and C2 is detectably labeled Q _C2, estimated by the following formula C3 is an imaginary mark detecting an amount Q _C3.

Likewise, Q _B1 and Q B2 is detectably labeled according to the detected amount of labeled B1 _B2 by the virtual marking speculative formula B3 is detected amount Q _B3.

As described above, according to this embodiment, the first virtual mark is set at the position in the junction area between the overlap mark on the first irradiation area side and the overlap mark on the second irradiation area side. Then, based on the amount of positional deviation between the overlapping marks on the side of the first shot area and the amount of positional deviation between the overlapping marks on the side of the second shot area, the amount of positional deviation of the first virtual mark is estimated, and this is estimated The positional deviation amount of is obtained as the first positional deviation amount. In addition, a second virtual mark is set at a position in the bonding area between the bonding position measurement mark on the first irradiation area side and the bonding position measurement mark on the second irradiation area side. Then, based on the amount of positional deviation between the bonding position measurement marks on the side of the first irradiation area and the amount of positional shift between the bonding position measurement marks on the side of the second irradiation area, the positional shift amount of the second virtual mark is estimated, The estimated positional deviation amount is calculated as the second positional deviation amount.

In addition, in FIG. 8, the marks for detecting the absolute positional deviation of the specific part of the irradiation area and the marks for detecting the relative positional displacement of the upper and lower layers of the specific part are arranged in the vicinity of the joint area. The same type of different irradiation areas The marks are arranged symmetrically with the center line of the joining area. However, the present invention is not limited to this configuration.

(Example 3) Furthermore, as shown in FIG. 9, in each of the irradiation area S1 and the irradiation area S2, a plurality of marks for detecting the deviation of the absolute position of the specific part of the irradiation area are arranged on an arbitrary straight line. In the case of, the imaginary mark can be arranged on a straight line in the joining area. The distances from the marks C10, C11, C20, and C21 to the virtual mark C30 are set to D10, D11, D20, and D21, respectively. In addition, the detection amounts of the markers C10, C11, C20, and C21 are Q _C10 , Q _C11 , Q _C20 , and Q _{C21, respectively} . In this case, the detection amount Q _{C30 of the} virtual marker C30 is estimated by the following formula.

Similarly, in each of the irradiated area S1 and the irradiated area S2, if a plurality of marks for detecting the relative positional deviation of the upper and lower layers of a specific part are arranged on an arbitrary straight line, a virtual mark can be arranged in the joint area The position on the line within. Let the distances from the marks B10, B11, B20, and B21 to the virtual mark B30 be E10, E11, E20, and E21, respectively. In addition, the detection amounts of the marks B10, B11, B20, and B21 are respectively referred to as Q _B10 , Q _B11 , Q _B20 , and Q _B21 . In this case, the detection amount Q _{B30 of the} virtual marker B30 is estimated by the following formula.

In the method shown in FIG. 9, the detection amount of the virtual mark is obtained by linear interpolation based on the detection amount of the placed mark, but it is not limited to this. It can also be obtained by other general statistical methods.

In each of the above-mentioned embodiments, the upper and lower layer detection marks or the virtual marks and the left and right irradiation zone alignment offset detection marks or the virtual marks in the joining area are respectively arranged one, but it is not limited to this. It is also possible to arrange a plurality of upper and lower layer detection marks or virtual marks thereof, and left and right irradiation zone alignment offset detection marks or virtual marks thereof in the joint area.

<Second Embodiment> As shown in FIG. 1, the exposure apparatus in the embodiment includes an alignment meter 80 and an off-axis meter 81. In this embodiment, both the aligner 80 and the off-axis meter 81 measure the mark exposed on the substrate and store the measurement data in the data holding unit 71. Regarding the alignment meter 80 and the off-axis meter 81, a calibration process is performed by the control unit 70, and adjustment is performed so that the measurement value is the same regardless of which instrument is used to measure the same mark. Here, by measuring the marks formed on the original plate 30 and the substrate 60 before exposure, the measurement of Δ1 and Δ2 described in Embodiment 1 can be realized. By using this method, the examples in the first embodiment can also be realized.

<Implementation of article manufacturing method> The article manufacturing method according to the embodiment of the present invention is suitable for manufacturing articles such as micro devices such as semiconductor devices, and elements having a fine structure, for example. The article manufacturing method of the present embodiment includes: a process of forming a latent image pattern (a process of exposing the substrate) to a photosensitive agent applied to a substrate using the above-mentioned pattern forming method or a photolithography apparatus; and forming a latent image in the above process The patterned substrate is processed (developed). Furthermore, the above-mentioned manufacturing method includes other well-known procedures (oxidation, film formation, vapor deposition, doping, planarization, etching, resist stripping, dicing, bonding, packaging, etc.). The article manufacturing method of the present embodiment is more advantageous than conventional methods in at least one aspect of article performance, quality, productivity, and production cost.

(Other embodiments) In the present invention, a program that realizes one or more functions of the above-mentioned embodiments may be supplied to a system or device via a network or a storage medium, and the program may be read and executed by one or more processors in the computer of the system or device. Processing to achieve. In addition, it can also be realized by a circuit (for example, ASIC) that realizes one or more functions. Other embodiments The embodiments of the present invention can also be implemented by the following method, that is, software (programs) that perform the functions of the above-mentioned embodiments are provided to a system or device through a network or various storage media, and the computer or the central office of the system or device The processing unit (CPU) and micro processing unit (MPU) read and execute the program.

The embodiments of the present invention have been described above, but the present invention is not limited to these embodiments, and various modifications and changes can be made within the scope of the gist.

10: Illumination optical system 20: Slit imaging system 30: Original 40: Projection optical system 60: substrate 70: Control Department

[Fig. 1] A diagram showing the structure of an exposure apparatus in an embodiment. [Fig. 2] is a diagram showing an example of illuminance distribution during bonding exposure. [Fig. 3] is a flowchart of processing for determining the correction amount and exposure processing. [Fig. 4] is a diagram showing an example of the mark arrangement of the irradiation area S1. [Fig. 5] is a diagram showing an example of the mark arrangement of the irradiation area S2. [Fig. 6] is a diagram showing an example of an overlap mark in a joining area and a joining position measurement mark. [Fig. 7] is a diagram showing an example of a joining position measurement mark. [Fig. 8] is a diagram showing an example of a virtual mark set in a joining area. [Fig. 9] Fig. 9 is a diagram showing an example of a virtual mark set in a joining area.

10: Illumination optical system

20: Slit imaging system

30: Original

31: Original stage

32: mirror

33: Interferometer

40: Projection optical system

50: X visor

60: substrate

61: Substrate mounting table

62: mirror

63: Interferometer

70: Control Department

71: Data Holding Department

72: Drive calculation unit

73: Drive indicator

80: aligner

81: Off-axis instrument

Claims (8)

A determination method that determines the amount of correction related to the alignment of the first and second shot regions of the substrate for bonding exposure in which the first shot region is exposed to form a first image , Expose the second irradiated area that overlaps a part of the first irradiated area to form a second image, and obtain an image in which the first image and the second image are superimposed, and use the determination method described above to determine it. The first position shift amount of the position shift amount between the overlap marks that overlap the upper and lower layers, Obtain a second positional shift amount, which is a positional shift amount between the bonding position measurement marks for performing alignment of the first irradiation area and the second irradiation area, The position shift amount obtained by adding a predetermined ratio of the second position shift amount to the first position shift amount is determined as the first in the joint area where the first irradiation area and the second irradiation area overlap. Image correction amount, The position shift amount obtained by subtracting the second position shift amount of the remaining ratio relative to the predetermined ratio from the first position shift amount is determined as the correction amount of the second image in the joint area. According to the decision method of claim 1, in which, Expose the first irradiation area, and form a first mark for aligning with the base mark formed in the lower layer of the bonding area in the bonding area, and a mark for the first irradiation area and the second irradiation area Counterpoint 2nd mark, Expose the second irradiation area to form a third mark that overlaps the first mark in order to align with the base mark, and form a fourth mark at a position that overlaps the second mark in the bonding area , The positional shift amount of the composite mark formed by overlapping the first mark and the third mark relative to the base mark is calculated as the first positional shift amount, The position shift amount of the fourth mark relative to the second mark is calculated as the second position shift amount. Determine the method according to claim 1, where: The overlap mark and the bonding position measurement mark are respectively formed at a position outside the bonding area in the first irradiation area and a position outside the bonding area in the second irradiation area, Set a first imaginary mark at the position in the junction area between the overlap mark on the first irradiation area side and the overlap mark on the second irradiation area side, and set the position between the overlap marks on the first irradiation area side The offset amount and the position offset amount between the overlap mark on the second irradiation area side, the position offset amount of the first virtual mark is estimated, and the estimated position offset amount is obtained as the first position offset Shift, Set a second imaginary mark at the position in the bonding area between the bonding position measurement mark on the first irradiation area side and the bonding position measurement mark on the second irradiation area side, based on the bonding position on the first irradiation area side Measure the positional deviation between the marks and the joint position on the second irradiation area side measure the positional deviation between the marks, estimate the positional deviation of the second virtual mark, and calculate the estimated positional deviation It is obtained as the aforementioned second position shift amount. According to the decision method of claim 1, in which, In order to equalize the illuminance distribution from the first shot area to the second shot area, when the first shot area is exposed and the second shot area is exposed, the bonding area The exposure is cross-mixed. According to the decision method of claim 4, The predetermined ratio is a ratio corresponding to the positions of the overlapping marks and the joining position measurement marks in the direction of the overlapping width of the first irradiation area and the second irradiation area in the joining area. An exposure method with: The first procedure is to expose the first irradiation area of the substrate to form a first image; and The second procedure is to expose a second irradiation area overlapping with a part of the aforementioned first irradiation area to form a second image; Obtain an image in which the first image and the second image are superimposed, In the aforementioned exposure method, In the foregoing first procedure, the correction amount of the first image determined by the determination method according to any one of the request items 1 to 5 is used to correct the junction area of the first irradiation area that overlaps the second irradiation area The aforementioned first image of In the second procedure, the second image in the junction area is corrected by the correction amount of the second image determined by the determination method according to any one of the requirements 1 to 5. An exposure apparatus for performing bonding exposure in which a first shot area of a substrate is exposed to form a first image, and a second shot area overlapping a part of the first shot area is exposed to form a first image 2 images to obtain an image in which the first image and the second image are superimposed, and the exposure device has: A processing unit that determines the amount of correction related to the alignment of the first irradiation area and the second irradiation area; and A control unit that performs the control of the aforementioned bonding exposure; The aforementioned processing unit: Calculate the first position shift amount as the position shift amount between the overlap marks for superimposing the upper and lower layers, Obtain a second positional shift amount, which is a positional shift amount between the bonding position measurement marks for performing alignment of the first irradiation area and the second irradiation area, The position shift amount obtained by adding a predetermined ratio of the second position shift amount to the first position shift amount is determined as the first in the joint area where the first irradiation area and the second irradiation area overlap. Image correction amount, The position shift amount obtained by subtracting the remaining ratio of the second position shift amount from the predetermined ratio from the first position shift amount is determined as the correction amount of the second image in the joint area, The control unit corrects the first image in the junction area using the determined correction amount of the first image, and uses the determined correction amount of the second image to correct the second image in the junction area, Thus, the aforementioned bonding exposure is performed. An article manufacturing method, including: A procedure for exposing the substrate using the exposure method according to claim 6; and The procedure of developing the aforementioned substrate exposed in the aforementioned procedure, An article is manufactured based on the developed aforementioned substrate.

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