TW202024759A - Pixel structure and fabricating method thereof - Google Patents

Abstract

A pixel structure and fabricating method thereof is provided. The pixel structure includes a pixel array substrate and a pixel electrode. The pixel array substrate includes a passivation layer at the top. The passivation layer has a plurality of recesses corresponding to at least one sub-pixel opening area. The pixel electrode is arranged on the passivation layer and includes a plurality of branches which are respectively arranged in the recesses. Each branch is spaced apart from at least one side wall of the corresponding recess.

Description

Pixel structure and manufacturing method thereof

The present invention relates to a display technology, in particular to a pixel structure and its manufacturing method.

Liquid crystal screens have become one of the mainstream of modern display technology products because of their low power consumption, thin and light weight, high color saturation, and long life.

Conventionally, the liquid crystal screen has an alignment film on both sides of the liquid crystal layer, and the liquid crystal material is disposed between them. Electrodes are respectively arranged outside the alignment film to control the tilt direction of the liquid crystal molecules. However, the surface of the electrode has obvious fluctuations due to the manufacturing process, which causes the thickness of the alignment film to vary, which in turn causes the problem of poor alignment ability of the alignment film.

In view of this, the embodiment of the present invention provides a pixel structure and a manufacturing method thereof.

The pixel structure includes a pixel array substrate and pixel electrodes. The pixel array substrate has an insulating layer at the top, and the insulating layer has a plurality of recesses corresponding to at least one sub-pixel opening area. The pixel electrode is arranged on the insulating layer, and the pixel electrode includes a plurality of branches, and the branches are arranged in the recess one by one, wherein each branch is separated from at least one side wall of the corresponding recess.

The manufacturing method of the pixel structure includes: forming a plurality of recesses corresponding to at least one sub-pixel opening area above the insulating layer on the top of the pixel array substrate; and forming a pixel electrode including a plurality of branches on the insulating layer, each branch One-to-one arrangement in the recess, wherein each branch is separated from at least one side wall of the corresponding recess.

The pixel structure and the manufacturing method provided by the embodiment of the present invention can make the alignment film thickness of the liquid crystal layer more uniform and enhance the alignment ability of the alignment film.

FIG. 1 is a schematic top view of a pixel structure according to an embodiment of the present invention, and FIG. 5 is a schematic cross-sectional view taken along the line A-A' in FIG. Referring to FIGS. 1 and 5 together, the pixel structure includes a pixel array substrate 100 and a pixel electrode 160. The pixel array substrate 100 includes a substrate 110, a gate insulating layer 120, an electrode layer 130, and an insulating layer 140 that are sequentially stacked from bottom to top. The upper surface of the insulating layer 140 has a plurality of recesses 141 corresponding to at least one sub-pixel opening area 150. The pixel electrode 160 is disposed on the insulating layer 140 and includes a plurality of branches 161. The branches 161 are arranged in the recesses 141 one to one. By disposing the branch 161 in the recess 141, the surface of the pixel structure can be made flatter, so that the thickness of the alignment film 200 of the liquid crystal layer above the pixel structure can be more uniform, and the alignment ability of the alignment film 200 can be increased.

In some embodiments, the substrate 110 may be a rigid substrate, a flexible substrate or a plastic substrate, and its material may include, for example, polyimide (PI), polyethylene terephthalate (polyethylene terephthalate, PET), polyethylene naphthalate (PEN), polyamide (PA) and other organic materials, but not limited to this.

In some embodiments, the materials of the gate insulating layer 120 and the insulating layer 140 may be inorganic materials, organic materials, or a combination thereof. Among them, the inorganic material is, for example, silicon oxide, silicon nitride, silicon oxynitride, or a stacked layer of at least two of the foregoing materials. The organic material is, for example, a polymer material such as polyimide resin, epoxy resin, or acrylic resin.

In some embodiments, the material of the electrode layer 130 and the pixel electrode 160 may be indium tin oxide, indium zinc oxide or other suitable metal oxides.

As shown in FIG. 5, each branch 161 has a distance w1 from at least one side wall of the corresponding recess 141, which means that each branch 161 and the corresponding recess 141 are not made by the yellow photolithography process of the same mask definition pattern, so that the two There is an interval w1 due to the influence of exposure between masks on the position shift.

In some embodiments, the width w3 of the recess 141 is greater than the width w2 of the branch 161.

In some embodiments, the width w3 of the recess 141 is n times the width w2 of the branch 161, where 1<n≦5.

As shown in FIG. 5, the height d2 of the recess 141 is higher than the height d1 of the branch 161. However, the present invention is not limited to this. In some embodiments, the height d2 of the recess 141 is m times the height d1 of the branch 161, where 0.1≦m≦2.

FIG. 2 is a flowchart (1) of a manufacturing method of a pixel structure according to an embodiment of the present invention. 6 to 12 illustrate the sequential changes in the manufacturing process of the pixel structure. Refer to Figure 2, Figure 6, Figure 11, and Figure 12 together. In step S100, a plurality of recesses 141 corresponding to at least one sub-pixel opening area 150 are formed on the upper surface of the insulating layer 140 at the top of the pixel array substrate 100 as shown in FIG. 6 (as shown in FIG. 11). Next, in step S200, a pixel electrode 160 including a plurality of branches 161 is formed on the insulating layer 140, and each branch 161 is disposed in the recess 141 one by one (as shown in FIG. 12).

FIG. 3 is a flowchart (2) of a manufacturing method of a pixel structure according to an embodiment of the present invention. 3, 9 and 10, the step of forming the recess 141 in step S100 is described here. First, in step S110, a photoresist layer 300 with a plurality of openings is disposed on the insulating layer 140 of the pixel array substrate 100 as shown in FIG. 6 (as shown in FIG. 9). Next, in step S120, an etching process is performed to pattern the insulating layer 140 to form a recess 141 (as shown in FIG. 10). Finally, in step S130, the photoresist layer 300 is removed, and the structure shown in FIG. 11 can be obtained. Then, proceed to step S200.

4 is a flowchart (3) of a manufacturing method of a pixel structure according to an embodiment of the present invention. 4, FIG. 7 and FIG. 8 together, the steps of the photoresist layer 300 having a plurality of openings in step S110 are described here. First, in step S111, a photoresist layer 300 is formed on the insulating layer 140 of the pixel array substrate 100 as shown in FIG. 6 (as shown in FIG. 7). Next, in step S112, the photoresist layer 300 is exposed through a half-step mask, and the photoresist layer 300 is developed (as shown in FIG. 8). Finally, in step S113, an etching process and an ashing process are performed to pattern the photoresist layer 300 to form a plurality of openings, and the structure shown in FIG. 9 can be obtained. Then, proceed to step S120 and subsequent steps.

In summary, the embodiment of the present invention provides a pixel structure and a manufacturing method thereof, which can make the thickness of the alignment film 200 of the liquid crystal layer more uniform and enhance the alignment ability of the alignment film 200.

100: pixel array substrate 110: substrate 120: gate insulating layer 130: electrode layer 140: insulating layer 141: recess 150: sub-pixel opening area 160: pixel electrode 161: branch 200: alignment film 300: photoresist layer w1: interval w2: width of the branch w3: width of the recess d1: height of the branch d2: height of the recess A-A': section line S100: steps S110, S120, S130: steps S111, S112, S113: step S200: step

[Fig. 1] is a schematic top view of a pixel structure according to an embodiment of the invention. [Fig. 2] is a flowchart (1) of a manufacturing method of a pixel structure according to an embodiment of the present invention. [Fig. 3] is a flowchart (2) of a method for manufacturing a pixel structure according to an embodiment of the present invention. [Fig. 4] is a flowchart (3) of a manufacturing method of a pixel structure according to an embodiment of the present invention. [Fig. 5] is a schematic cross-sectional view taken along the line A-A' in Fig. 1. [Fig. [Fig. 6] to [Fig. 12] are the sequential changes of the pixel structure manufacturing process of an embodiment of the present invention.

100: Pixel array substrate

110: substrate

120: Gate insulation layer

130: electrode layer

140: insulating layer

141: Depression

161: Branch

200: Alignment film

w1: interval

w2: width of branch

w3: the width of the recess

d1: height of branch

d2: height of depression

Claims (10)

A pixel structure, comprising: a pixel array substrate with an insulating layer on the top, a plurality of recesses corresponding to at least one sub-pixel opening area above the insulating layer; and a pixel electrode disposed on the insulating layer On the layer, the pixel electrode includes a plurality of branches, the branches are arranged in the recesses one by one, and each branch is spaced apart from at least one sidewall of the corresponding recess. The pixel structure according to claim 1, wherein the width of the recess is greater than the width of the branch. The pixel structure according to claim 1, wherein the width of the recess is n times the width of the branch, where 1<n≦5. The pixel structure according to claim 1, wherein the height of the recess is higher than the height of the branch. The pixel structure according to claim 1, wherein the height of the recess is m times the height of the branch, where 0.1≦m≦2. A method for manufacturing a pixel structure includes: forming a plurality of recesses corresponding to at least one sub-pixel opening area above an insulating layer on the top of a pixel array substrate; and forming a pixel electrode including a plurality of branches on the On the insulating layer, each branch is arranged in the recesses one by one, and each branch is spaced apart from at least one sidewall of the corresponding recess. The manufacturing method of the pixel structure according to claim 6, wherein the step of forming the recesses includes: disposing a photoresist layer with a plurality of openings on the insulating layer; performing an etching process to pattern the insulating layer to form The recesses; and removing the photoresist layer. The method for manufacturing a pixel structure according to claim 7, wherein the step of forming the photoresist layer with the plurality of openings includes: forming a photoresist layer on the insulating layer; exposing the photoresist layer through a half-step mask, A development process is performed on the photoresist layer; and an etching process and an ashing process are performed to pattern the photoresist layer to form the plurality of openings. The manufacturing method of the pixel structure according to claim 6, wherein the width of the recess is n times the width of the branch, where 1<n≦5. The method for manufacturing a pixel structure according to claim 6, wherein the height of the recess is m times the height of the branch, where 0.1≦m≦2.

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