TW202021922A - Powder material for wavelength conversion member - Google Patents

Powder material for wavelength conversion member Download PDF

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TW202021922A
TW202021922A TW108132538A TW108132538A TW202021922A TW 202021922 A TW202021922 A TW 202021922A TW 108132538 A TW108132538 A TW 108132538A TW 108132538 A TW108132538 A TW 108132538A TW 202021922 A TW202021922 A TW 202021922A
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wavelength conversion
conversion member
powder
light
phosphors
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TW108132538A
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Chinese (zh)
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清水寛之
浅野秀樹
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日商日本電氣硝子股份有限公司
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    • CCHEMISTRY; METALLURGY
    • C03GLASS; MINERAL OR SLAG WOOL
    • C03CCHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
    • C03C3/00Glass compositions
    • C03C3/04Glass compositions containing silica
    • C03C3/076Glass compositions containing silica with 40% to 90% silica, by weight
    • C03C3/089Glass compositions containing silica with 40% to 90% silica, by weight containing boron
    • C03C3/091Glass compositions containing silica with 40% to 90% silica, by weight containing boron containing aluminium
    • C03C3/093Glass compositions containing silica with 40% to 90% silica, by weight containing boron containing aluminium containing zinc or zirconium
    • CCHEMISTRY; METALLURGY
    • C03GLASS; MINERAL OR SLAG WOOL
    • C03CCHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
    • C03C3/00Glass compositions
    • C03C3/04Glass compositions containing silica
    • C03C3/076Glass compositions containing silica with 40% to 90% silica, by weight
    • C03C3/089Glass compositions containing silica with 40% to 90% silica, by weight containing boron
    • C03C3/091Glass compositions containing silica with 40% to 90% silica, by weight containing boron containing aluminium
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/50Wavelength conversion elements
    • H01L33/501Wavelength conversion elements characterised by the materials, e.g. binder
    • GPHYSICS
    • G02OPTICS
    • G02BOPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B1/00Optical elements characterised by the material of which they are made; Optical coatings for optical elements
    • G02B1/10Optical coatings produced by application to, or surface treatment of, optical elements
    • G02B1/11Anti-reflection coatings
    • G02B1/113Anti-reflection coatings using inorganic layer materials only
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2933/00Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
    • H01L2933/0008Processes
    • H01L2933/0033Processes relating to semiconductor body packages
    • H01L2933/0041Processes relating to semiconductor body packages relating to wavelength conversion elements

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  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Geochemistry & Mineralogy (AREA)
  • Materials Engineering (AREA)
  • Organic Chemistry (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Glass Compositions (AREA)
  • Led Device Packages (AREA)
  • Optical Filters (AREA)
  • Luminescent Compositions (AREA)

Abstract

Provided is a powder material for a wavelength conversion member, with which the formation of transparency-reducing substances in glass powder due to baking during production is less likely to occur, and which makes it possible to obtain a wavelength conversion member having excellent light retrieval efficiency. This powder material for a wavelength conversion member is characterized by containing a fluorescence powder and a glass powder containing, in terms of mass percent, 70-90% of SiO2 and 10-25% of B2O3.

Description

波長轉換構件用原料粉末Raw material powder for wavelength conversion components

本發明係關於一種用於製作用以將發光二極體(LED:Light Emitting Diode)或雷射二極體(LD:Laser Diode)等發光元件所發出之光之波長轉換為其他波長之波長轉換構件之原料粉末。The present invention relates to a kind of wavelength conversion used to produce light emitting diodes (LED: Light Emitting Diode) or laser diodes (LD: Laser Diode) to convert the wavelength of light emitted by light emitting elements into other wavelengths Raw material powder for components.

近年來,作為代替螢光燈或白熾燈之下一代光源,就低耗電、小型輕量、容易調節光量之觀點而言,高度著眼於使用LED或LD之光源。作為此種下一代光源之一例,例如專利文獻1中揭示有於出射藍色光之LED上配置有吸收來自LED之光之一部分並轉換為黃色光之波長轉換構件之光源。該光源發出自LED出射之藍色光與自波長轉換構件出射之黃色光之合成光即白色光。In recent years, as a next-generation light source to replace fluorescent lamps or incandescent lamps, the light source using LED or LD is highly focused in terms of low power consumption, small size and light weight, and easy adjustment of light intensity. As an example of such a next-generation light source, for example, Patent Document 1 discloses a light source in which a wavelength conversion member that absorbs a part of the light from the LED and converts it into yellow light is arranged on an LED emitting blue light. The light source emits white light, which is the synthesized light of the blue light emitted from the LED and the yellow light emitted from the wavelength conversion member.

作為波長轉換構件,先前使用樹脂基質中分散有螢光體粉末者。然而,於使用該波長轉換構件之情形時,存在因來自LED之光而使樹脂劣化,光源之亮度易變低之問題。尤其存在因LED發出之熱或高能量之短波長(藍色~紫外)光導致樹脂基質劣化並引起變色或變形之問題。As the wavelength conversion member, a resin matrix in which phosphor powder is dispersed has previously been used. However, when the wavelength conversion member is used, there is a problem that the resin is deteriorated by the light from the LED, and the brightness of the light source tends to be low. In particular, there is a problem that the resin matrix deteriorates and causes discoloration or deformation due to heat or high-energy short-wavelength (blue to ultraviolet) light emitted by the LED.

因此,揭示有包含代替樹脂而於玻璃基質中分散固定有螢光體粉末之完全無機固體之波長轉換構件(例如參照專利文獻2)。該波長轉換構件具有以下特徵:成為母材之玻璃不易因LED晶片之熱或照射光而劣化,不易產生變色或變形等問題。  [先前技術文獻]  [專利文獻]Therefore, a wavelength conversion member containing a complete inorganic solid in which phosphor powder is dispersed and fixed in a glass matrix instead of a resin is disclosed (for example, refer to Patent Document 2). The wavelength conversion member has the following characteristics: the glass used as the base material is not easily degraded by the heat of the LED chip or irradiated light, and it is not likely to cause problems such as discoloration or deformation. [Prior technical literature] [Patent literature]

[專利文獻1]日本專利特開2000-208815號公報  [專利文獻2]日本專利特開2003-258308號公報[Patent Document 1] Japanese Patent Laid-open No. 2000-208815 [Patent Document 2] Japanese Patent Laid-Open No. 2003-258308

[發明所欲解決之問題][Problems to be solved by the invention]

然而,專利文獻2中記載之波長轉換構件存在因製造時之焙燒而容易於玻璃基質中產生失透物之問題。其結果為,存在如下傾向:入射至波長轉換構件內之激發光或經轉換之螢光光因該失透物而過度散射,朝光源側之回光增加,導致光提取效率降低。However, the wavelength conversion member described in Patent Document 2 has a problem that devitrification materials are easily generated in the glass matrix due to firing during manufacture. As a result, there is a tendency that excitation light or converted fluorescent light incident into the wavelength conversion member is excessively scattered by the devitrification material, and the return light toward the light source side increases, resulting in a decrease in light extraction efficiency.

鑒於以上情況,本發明之目的在於提供一種可獲得不易因製造時之焙燒而於玻璃粉末中產生失透物、光提取效率優異之波長轉換構件之波長轉換構件用原料粉末。  [解決問題之技術手段]In view of the above circumstances, an object of the present invention is to provide a raw material powder for a wavelength conversion member that can obtain a wavelength conversion member that is less likely to generate devitrification material in the glass powder due to firing during manufacturing and has excellent light extraction efficiency. [Technical means to solve the problem]

本發明者等人進行銳意研究,結果發現,藉由使用具有特定組成之玻璃粉末之波長轉換構件用原料粉末,可解決上述課題。The inventors of the present invention conducted intensive research and found that the above-mentioned problems can be solved by using a raw material powder for a wavelength conversion member of a glass powder having a specific composition.

即,本發明之波長轉換構件用原料粉末之特徵在於含有:以質量%計含有SiO2 70~90%、B2 O3 10~25%之玻璃粉末及螢光體粉末。具有該組成之玻璃粉末具有焙燒時不易失透之特徵。因此,將本發明之波長轉換構件用原料粉末焙燒而獲得之波長轉換構件於玻璃基質中失透物變少,激發光或螢光之過度散射得以抑制,故結果可提昇光提取效率。That is, the raw material powder for a wavelength conversion member of the present invention is characterized by containing glass powder and phosphor powder containing 70 to 90% of SiO 2 and 10 to 25% of B 2 O 3 in mass %. The glass powder with this composition has the characteristic that it is not easy to devitrify during firing. Therefore, the wavelength conversion member obtained by firing the raw material powder for the wavelength conversion member of the present invention has less devitrification in the glass matrix, and excessive scattering of excitation light or fluorescent light is suppressed, and as a result, the light extraction efficiency can be improved.

本發明之波長轉換構件用原料粉末較佳為以質量%計含有K2 O 0~5%、Al2 O3 0~5%。The raw material powder for the wavelength conversion member of the present invention preferably contains 0 to 5% K 2 O and 0 to 5% Al 2 O 3 in mass %.

本發明之波長轉換構件用原料粉末較佳為玻璃粉末之軟化點為700~1100℃。The raw material powder for the wavelength conversion member of the present invention is preferably glass powder with a softening point of 700 to 1100°C.

本發明之波長轉換構件用原料粉末較佳為玻璃粉末之折射率(nd)為1.55以下。The raw material powder for the wavelength conversion member of the present invention is preferably glass powder with a refractive index (nd) of 1.55 or less.

本發明之波長轉換構件用原料粉末較佳為螢光體粉末為選自由氧化物螢光體、氮化物螢光體、氮氧化物螢光體、氯化物螢光體、醯氯螢光體、鹵化物螢光體、鋁酸鹽螢光體及鹵磷酸氯化物螢光體所組成之群中之至少1種。The raw material powder for the wavelength conversion member of the present invention is preferably a phosphor powder selected from oxide phosphors, nitride phosphors, oxynitride phosphors, chloride phosphors, chlorinated phosphors, At least one of the group consisting of halide phosphors, aluminate phosphors and halophosphate chloride phosphors.

本發明之波長轉換構件用原料粉末較佳為含有0.01~70質量%之螢光體粉末。The raw material powder for the wavelength conversion member of the present invention preferably contains 0.01 to 70% by mass of phosphor powder.

本發明之波長轉換構件較佳為包含上述波長轉換構件用原料粉末之燒結體。The wavelength conversion member of the present invention is preferably a sintered body containing the raw material powder for the wavelength conversion member.

本發明之波長轉換構件之特徵在於:其係螢光體粉末分散於以質量%計含有SiO2 70~90%、B2 O3 10~25%之玻璃基質中而成。The wavelength conversion member of the present invention is characterized in that it is formed by dispersing phosphor powder in a glass matrix containing 70 to 90% of SiO 2 and 10 to 25% of B 2 O 3 by mass%.

本發明之發光裝置之特徵在於:其係具備上述波長轉換構件、及向波長轉換構件照射激發光之光源而成。The light-emitting device of the present invention is characterized in that it includes the above-mentioned wavelength conversion member and a light source that irradiates the wavelength conversion member with excitation light.

本發明之車載用照明之特徵在於使用上述發光裝置。The vehicle-mounted lighting of the present invention is characterized by using the above-mentioned light-emitting device.

本發明之車載用照明較佳為用作前照燈。  [發明之效果]The vehicle-mounted lighting of the present invention is preferably used as a headlight. [Effects of the invention]

本發明之波長轉換構件用原料粉末由於不易於焙燒時於玻璃粉末中產生失透物,故可獲得光提取效率優異之波長轉換構件。Since the raw material powder for the wavelength conversion member of the present invention is unlikely to generate devitrification substances in the glass powder during firing, a wavelength conversion member with excellent light extraction efficiency can be obtained.

本發明之波長轉換構件用原料粉末之特徵在於含有:以質量%計含有SiO2 70~90%、B2 O3 10~25%之玻璃粉末及螢光體粉末。以此方式限定玻璃粉末之組成範圍之理由於以下說明。再者,於以下說明中,若無特別聲明,則「%」意指「質量%」。The raw material powder for a wavelength conversion member of the present invention is characterized by containing glass powder and phosphor powder containing 70 to 90% of SiO 2 and 10 to 25% of B 2 O 3 by mass%. The reason for limiting the composition range of the glass powder in this way is explained below. Furthermore, in the following description, if there is no special statement, "%" means "quality%".

SiO2 係形成玻璃網絡之成分。SiO2 之含量較佳為70~90%、72~85%、75~83%,尤佳為77~82%。若SiO2 之含量過少,則於焙燒時變得易產生失透。又,存在耐候性或機械強度降低之傾向。另一方面,若SiO2 之含量過多,則燒結溫度成為高溫,故焙燒時螢光體粉末變得易劣化。又,焙燒時之玻璃粉末之流動性不良,焙燒後之玻璃基質中容易殘存氣泡。該氣泡與失透物同樣地成為光散射要因,有波長轉換構件之光提取效率降低之虞。SiO 2 is a component that forms the glass network. The content of SiO 2 is preferably 70 to 90%, 72 to 85%, 75 to 83%, and particularly preferably 77 to 82%. If the content of SiO 2 is too small, devitrification tends to occur during firing. In addition, there is a tendency for weather resistance or mechanical strength to decrease. On the other hand, if the content of SiO 2 is too large, the sintering temperature becomes high, so the phosphor powder is easily deteriorated during firing. In addition, the fluidity of the glass powder during firing is poor, and bubbles are likely to remain in the glass matrix after firing. This air bubble becomes a factor of light scattering similarly to the devitrification material, and the light extraction efficiency of the wavelength conversion member may be reduced.

B2 O3 係使熔融溫度降低而顯著改善熔融性之成分。B2 O3 之含量較佳為10~25%、12~24%、15~21%、尤佳為15~20%。若B2 O3 之含量過少,則於焙燒時變得易產生失透。又,焙燒時之玻璃粉末之流動性不良,根據上述理由,有波長轉換構件之光提取效率降低之虞。另一方面,若B2 O3 之含量過多,則耐候性變得易降低。B 2 O 3 is a component that reduces the melting temperature and significantly improves the meltability. The content of B 2 O 3 is preferably 10-25%, 12-24%, 15-21%, and particularly preferably 15-20%. If the content of B 2 O 3 is too small, devitrification tends to occur during firing. In addition, the fluidity of the glass powder during firing is poor, and the light extraction efficiency of the wavelength conversion member may be reduced for the above reasons. On the other hand, if the content of B 2 O 3 is too large, the weather resistance tends to decrease.

玻璃粉末中除上述成分以外亦可含有以下成分。The glass powder may contain the following components in addition to the above-mentioned components.

K2 O係使熔融溫度降低而改善熔融性、且使軟化點降低之成分。然而,若K2 O含量過多,則耐候性變得易降低。又,有K2 O成為著色中心而吸收激發光或螢光,而成為發光強度降低之原因之傾向。因此,K2 O之含量較佳為0~5%、0.5~4%、1~3%,尤佳為1~2%。K 2 O is a component that lowers the melting temperature, improves meltability, and lowers the softening point. However, if the K 2 O content is too much, the weather resistance tends to decrease. In addition, there is a tendency that K 2 O becomes a coloring center and absorbs excitation light or fluorescence, which causes a decrease in luminous intensity. Therefore, the content of K 2 O is preferably 0 to 5%, 0.5 to 4%, 1 to 3%, and particularly preferably 1 to 2%.

Al2 O3 係提昇耐候性、化學耐久性及機械強度之成分。Al2 O3 之含量較佳為0~5%、0.01~3%、0.1~2%,尤佳為0.2~1%。若Al2 O3 之含量過多,則有熔融性降低之傾向。Al 2 O 3 is a component that improves weather resistance, chemical durability and mechanical strength. The content of Al 2 O 3 is preferably 0-5%, 0.01-3%, 0.1-2%, and particularly preferably 0.2-1%. If the content of Al 2 O 3 is too large, the meltability tends to decrease.

Li2 O及Na2 O係與K2 O同樣地為使熔融溫度降低而改善熔融性、且使軟化點降低之成分。然而,若該等成分之含量過多,則耐候性變得易降低。又,有成為著色中心而吸收激發光或螢光,而成為發光強度降低之原因之傾向。因此,Li2 O及Na2 O之含量分別較佳為0~5%、0.5~4%、1~3%,尤佳為1~2%。Li 2 O and Na 2 O are components that lower the melting temperature, improve the meltability, and lower the softening point, similarly to K 2 O. However, if the content of these components is too large, the weather resistance tends to decrease. In addition, it becomes a coloring center and absorbs excitation light or fluorescence, which tends to cause a decrease in luminous intensity. Therefore, the content of Li 2 O and Na 2 O are preferably 0 to 5%, 0.5 to 4%, 1 to 3%, and particularly preferably 1 to 2%.

MgO、CaO、SrO及BaO係使熔融溫度降低而改善熔融性、使軟化點降低之成分。再者,該等成分與鹼金屬成分不同,不對波長轉換構件之發光強度之降低造成影響。該等成分之含量較佳為各0~5%、0.01~3%、0.03~2%,尤佳為0.05~1%。若該等成分之含量過多,則耐候性變得易降低。再者,較佳為MgO、CaO、SrO及BaO之合計量亦為上述範圍內。MgO, CaO, SrO and BaO are components that lower the melting temperature to improve the meltability and lower the softening point. Furthermore, these components are different from the alkali metal components and do not affect the reduction of the luminous intensity of the wavelength conversion member. The content of these ingredients is preferably 0 to 5%, 0.01 to 3%, 0.03 to 2%, and more preferably 0.05 to 1%. If the content of these components is too large, the weather resistance tends to decrease. Furthermore, it is preferable that the total amount of MgO, CaO, SrO, and BaO is also within the above range.

又,除上述成分以外,亦可於不損害本發明之效果之範圍含有各種成分。例如,可以各10%以下、尤其是5%以下、合計量15%以下之範圍含有ZnO、P2 O5 、La2 O3 、Ta2 O5 、TeO2 、TiO2 、Nb2 O5 、Gd2 O3 、Y2 O3 、CeO2 、Sb2 O3 、SnO2 、Bi2 O3 、As2 O3 及ZrO2 等。又,亦可含有F。F由於有使軟化點降低之效果,故藉由含有F代替作為著色中心形成之原因之一的鹼金屬成分,而可於維持低軟化點之條件下抑制發光強度之經時降低。F之含量較佳為以陰離子%計為0~10%、0~8%,尤佳為0.1~5%。Moreover, in addition to the above-mentioned components, various components may be contained within the range which does not impair the effect of this invention. For example, ZnO, P 2 O 5 , La 2 O 3 , Ta 2 O 5 , TeO 2 , TiO 2 , Nb 2 O 5 , Nb 2 O 5 can be contained within a range of 10% or less, especially 5% or less, and 15% or less in total. Gd 2 O 3 , Y 2 O 3 , CeO 2 , Sb 2 O 3 , SnO 2 , Bi 2 O 3 , As 2 O 3 and ZrO 2 etc. In addition, F may be contained. Since F has the effect of lowering the softening point, by containing F instead of the alkali metal component that is one of the causes of the formation of the coloring center, the time-dependent decrease in luminous intensity can be suppressed while maintaining a low softening point. The content of F is preferably 0-10%, 0-8%, and particularly preferably 0.1-5% in terms of anion %.

Fe及Cr係使可見光透過率降低而成為發光強度降低之原因之成分。因此,Fe之含量較佳為1000 ppm以下、500 ppm以下,尤佳為100 ppm以下。又,Cr之含量較佳為500 ppm以下,尤佳為100 ppm以下。其中,為了使玻璃中不含有Fe及Cr,需要使用高價之高純度原料,故製造成本容易升高。因此,就降低製造成本之觀點而言,Fe及Cr之含量較佳為各5 ppm以上,尤佳為10 ppm以上。Fe and Cr are components that reduce the transmittance of visible light and cause the decrease in luminous intensity. Therefore, the Fe content is preferably 1000 ppm or less, 500 ppm or less, and particularly preferably 100 ppm or less. In addition, the content of Cr is preferably 500 ppm or less, and particularly preferably 100 ppm or less. Among them, in order to prevent Fe and Cr from being contained in the glass, it is necessary to use expensive and high-purity raw materials, so the manufacturing cost tends to increase. Therefore, from the viewpoint of reducing the manufacturing cost, the content of Fe and Cr is preferably 5 ppm or more each, and particularly preferably 10 ppm or more.

玻璃粉末之軟化點較佳為700~1100℃、750~1050℃,尤佳為800~1000℃。若玻璃粉末之軟化點過低,則機械強度及耐候性變得易降低。另一方面,若軟化點過高,則燒結溫度亦變高,故於製造時之焙燒步驟中,螢光體粉末變得易劣化。The softening point of the glass powder is preferably 700 to 1100°C, 750 to 1050°C, and particularly preferably 800 to 1000°C. If the softening point of the glass powder is too low, the mechanical strength and weather resistance tend to decrease. On the other hand, if the softening point is too high, the sintering temperature will also become high, so the phosphor powder will easily deteriorate in the firing step during production.

玻璃粉末之折射率(nd)較佳為1.55以下、1.52以下、1.5以下,尤佳為1.48以下。若折射率過高,則與空氣之折射率差變大,螢光或激發光容易於波長轉換構件之光出射面上反射,故光提取效率變得易降低。另一方面,折射率之下限並無特別限制,實際上為1.4以上,進而為1.42以上。The refractive index (nd) of the glass powder is preferably 1.55 or less, 1.52 or less, 1.5 or less, and particularly preferably 1.48 or less. If the refractive index is too high, the refractive index difference with the air becomes large, and fluorescent light or excitation light is easily reflected on the light exit surface of the wavelength conversion member, so the light extraction efficiency is likely to decrease. On the other hand, the lower limit of the refractive index is not particularly limited, but is actually 1.4 or more, and further 1.42 or more.

玻璃粉末之平均粒徑D50 較佳為100 μm以下、50 μm以下、20 μm以下,尤佳為10 μm以下。若玻璃粉末之平均粒徑D50 過大,則於獲得之波長轉換構件中,焙燒後之玻璃基質中變得易殘存氣泡,根據上述理由,有波長轉換構件之光提取效率降低之虞。玻璃粉末之平均粒徑D50 之下限並無特別限制,考慮到生產成本或操作性,較佳為0.1 μm以上、1 μm以上,尤佳為2 μm以上。再者,於本發明中,平均粒徑D50 係指藉由雷射繞射法而測得之值。The average particle size D 50 of the glass powder is preferably 100 μm or less, 50 μm or less, 20 μm or less, and particularly preferably 10 μm or less. If the average particle size D 50 of the glass powder is too large, in the obtained wavelength conversion member, air bubbles tend to remain in the glass matrix after firing. For the above reasons, the light extraction efficiency of the wavelength conversion member may decrease. The lower limit of the average particle size D 50 of the glass powder is not particularly limited. In consideration of production cost or operability, it is preferably 0.1 μm or more, 1 μm or more, and particularly preferably 2 μm or more. Furthermore, in the present invention, the average particle diameter D 50 refers to a value measured by a laser diffraction method.

如上所述,本發明中使用之玻璃粉末不易因焙燒而產生失透。例如,本發明中使用之玻璃粉末之燒結體於波長550 nm、厚度1 mm時,可達成70%以上、73%以上、尤其是75%以上之全光線透過率。As described above, the glass powder used in the present invention is unlikely to cause devitrification due to firing. For example, when the sintered body of glass powder used in the present invention has a wavelength of 550 nm and a thickness of 1 mm, a total light transmittance of 70% or more, 73% or more, especially 75% or more can be achieved.

作為螢光體粉末,可使用選自由氧化物螢光體(包含YAG螢光體等石榴石系螢光體)、氮化物螢光體、氮氧化物螢光體、氯化物螢光體、醯氯螢光體、鹵化物螢光體、鋁酸鹽螢光體及鹵磷酸氯化物螢光體所組成之群中之至少1種無機螢光體。該等螢光體粉末之中,由於氧化物螢光體、氮化物螢光體及氮氧化物螢光體之耐熱性較高,於焙燒時相對不易劣化,故較佳。再者,作為除上述以外之螢光體,亦可使用硫化物螢光體。The phosphor powder can be selected from oxide phosphors (including YAG phosphors and other garnet phosphors), nitride phosphors, oxynitride phosphors, chloride phosphors, and At least one inorganic phosphor from the group consisting of chloro phosphor, halide phosphor, aluminate phosphor, and halophosphate chloride phosphor. Among the phosphor powders, oxide phosphors, nitride phosphors, and oxynitride phosphors have high heat resistance and are relatively resistant to deterioration during firing, so they are preferred. Furthermore, as phosphors other than the above, sulfide phosphors may also be used.

作為上述螢光體粉末,可列舉波長300~500 nm中具有激發帶且波長380~780 nm中具有發光波峰者,尤其可列舉發藍色(波長440~480 nm)、綠色(波長500~540 nm)、黃色(波長540~595 nm)、紅色(波長600~700 nm)光者。Examples of the above-mentioned phosphor powder include those having an excitation band at a wavelength of 300 to 500 nm and an emission peak at a wavelength of 380 to 780 nm. In particular, blue (wavelength of 440 to 480 nm) and green (wavelength of 500 to 540) nm), yellow (wavelength 540-595 nm), red (wavelength 600-700 nm) light.

作為若照射波長300~440 nm之紫外~近紫外之激發光則發出藍色螢光之螢光體粉末,可列舉:(Sr, Ba)MgAl10 O17 :Eu2+ 、(Sr, Ba)3 MgSi2 O8 :Eu2+ 等。Examples of phosphor powders that emit blue fluorescence when irradiated with ultraviolet to near ultraviolet excitation light with a wavelength of 300-440 nm include: (Sr, Ba)MgAl 10 O 17 :Eu 2+ , (Sr, Ba) 3 MgSi 2 O 8 : Eu 2+ etc.

作為若照射波長300~440 nm之紫外~近紫外之激發光則發出綠色螢光之螢光體粉末,可列舉:SrAl2 O4 :Eu2+ 、SrBaSiO4 :Eu2+ 、(Y, Gd)3 Al5 O12 :Ce3+ 、SrSiON:Eu2+ 、BaMgAl10 O17 :Eu2+ ,Mn2+ 、Ba2 MgSi2 O7 :Eu2+ 、Ba2 SiO4 :Eu2+ 、Ba2 Li2 Si2 O7 :Eu2+ 、BaAl2 O4 :Eu2+ 等。Examples of phosphor powders that emit green fluorescence when irradiated with ultraviolet to near-ultraviolet excitation light with a wavelength of 300-440 nm include: SrAl 2 O 4 :Eu 2+ , SrBaSiO 4 :Eu 2+ , (Y, Gd) 3 Al 5 O 12 :Ce 3+ , SrSiON:Eu 2+ , BaMgAl 10 O 17 :Eu 2+ , Mn 2+ , Ba 2 MgSi 2 O 7 :Eu 2+ , Ba 2 SiO 4 :Eu 2+ , Ba 2 Li 2 Si 2 O 7 :Eu 2+ , BaAl 2 O 4 :Eu 2+ and so on.

作為若照射波長440~480 nm之藍色之激發光則發出綠色螢光之螢光體粉末,可列舉:SrAl2 O4 :Eu2+ 、SrBaSiO4 :Eu2+ 、(Y, Gd)3 Al5 O12 :Ce3+ 、SrSiON:Eu2+ 、β-SiAlON:Eu2+ 、Lu3 Al5 O12 :Ce3+ 等。Examples of phosphor powders that emit green fluorescence when irradiated with blue excitation light with a wavelength of 440-480 nm include: SrAl 2 O 4 :Eu 2+ , SrBaSiO 4 :Eu 2+ , (Y, Gd) 3 Al 5 O 12 :Ce 3+ , SrSiON:Eu 2+ , β-SiAlON:Eu 2+ , Lu 3 Al 5 O 12 :Ce 3+ etc.

作為若照射波長300~440 nm之紫外~近紫外之激發光則發出黃色螢光之螢光體粉末,可列舉La3 Si6 N11 :Ce3+ 等。As the phosphor powder that emits yellow fluorescence when irradiated with ultraviolet to near ultraviolet excitation light with a wavelength of 300 to 440 nm, La 3 Si 6 N 11 :Ce 3+ and the like can be cited .

作為若照射波長440~480 nm之藍色之激發光則發出黃色螢光之螢光體粉末,可列舉:(Y, Gd)3 Al5 O12 :Ce3+ 、Sr2 SiO4 :Eu2+Examples of phosphor powders that emit yellow fluorescence when irradiated with blue excitation light with a wavelength of 440-480 nm include: (Y, Gd) 3 Al 5 O 12 :Ce 3+ , Sr 2 SiO 4 :Eu 2+ .

作為若照射波長300~440 nm之紫外~近紫外之激發光則發出紅色螢光之螢光體粉末,可列舉:MgSr3 Si2 O8 :Eu2+ ,Mn2+ 、Ca2 MgSi2 O7 :Eu2+ ,Mn2+ 等。Examples of phosphor powders that emit red fluorescence when irradiated with ultraviolet to near ultraviolet excitation light with a wavelength of 300-440 nm include: MgSr 3 Si 2 O 8 :Eu 2+ , Mn 2+ , Ca 2 MgSi 2 O 7 : Eu 2+ , Mn 2+ etc.

若照射波長440~480 nm之藍色激發光則發出紅色螢光之螢光體粉末,可列舉:CaAlSiN3 :Eu2+ 、CaSiN3 :Eu2+ 、(Ca, Sr)2 Si5 N8 :Eu2+ 、α-SiAlON:Eu2+ 等。If irradiated with blue excitation light with a wavelength of 440~480 nm, the phosphor powder will emit red fluorescence. Examples include: CaAlSiN 3 :Eu 2+ , CaSiN 3 :Eu 2+ , (Ca, Sr) 2 Si 5 N 8 : Eu 2+ , α-SiAlON:Eu 2+ etc.

再者,可根據激發光或發光之波長區域,將複數種螢光體粉末混合使用。例如,於照射紫外線區域之激發光獲得白色光之情形時,只要將發出藍色、綠色、黃色、紅色螢光之螢光體粉末混合使用即可。Furthermore, a plurality of phosphor powders can be mixed and used according to the wavelength region of excitation light or emission. For example, when irradiating excitation light in the ultraviolet region to obtain white light, it is only necessary to mix and use phosphor powders that emit blue, green, yellow, and red fluorescence.

波長轉換構件之發光效率(lm/W)根據螢光體粉末之種類或含量、進而波長轉換構件之厚度等而變化。螢光體粉末之含量與波長轉換構件之厚度只要以發光效率或色度成為最佳之方式適當調整即可。例如,於波長轉換構件之厚度較小之情形時,欲獲得所需之發光效率或色度,只要增加螢光體粉末之含量即可。但,若螢光體粉末之含量過多,則有產生變得不易燒結,氣孔率變大,激發光不易效率良好地照射至螢光體粉末,波長轉換構件之機械強度降低等問題之虞。另一方面,若螢光體粉末之含量過少,則難以獲得所需之發光強度。就此種觀點而言,本發明之波長轉換構件用原料粉末中之螢光體粉末之含量較佳為0.01~70質量%,更佳為0.05~50質量%,進而較佳為0.08~30質量%。The luminous efficiency (lm/W) of the wavelength conversion member varies according to the type or content of the phosphor powder, and the thickness of the wavelength conversion member. The content of the phosphor powder and the thickness of the wavelength conversion member may be appropriately adjusted so that the luminous efficiency or chromaticity becomes the best. For example, when the thickness of the wavelength conversion member is small, to obtain the required luminous efficiency or chromaticity, it is only necessary to increase the content of the phosphor powder. However, if the content of the phosphor powder is too large, it may become difficult to sinter, the porosity will increase, the excitation light will not be efficiently irradiated to the phosphor powder, and the mechanical strength of the wavelength conversion member may decrease. On the other hand, if the content of the phosphor powder is too small, it is difficult to obtain the desired luminous intensity. From this point of view, the content of the phosphor powder in the raw material powder for the wavelength conversion member of the present invention is preferably 0.01 to 70% by mass, more preferably 0.05 to 50% by mass, and still more preferably 0.08 to 30% by mass .

再者,關於為了使波長轉換構件中產生之螢光向激發光入射側發生反射且主要僅將螢光提取至外部之波長轉換構件,並不限定於上述,可以使發光強度成為最大之方式增加螢光體粉末之含量(例如30~80質量%,進而為40~75質量%)。In addition, the wavelength conversion member that mainly only extracts the fluorescent light to the outside in order to reflect the fluorescent light generated in the wavelength conversion member to the incident side of the excitation light is not limited to the above, and the luminous intensity can be increased in a way The content of the phosphor powder (for example, 30 to 80% by mass, and further 40 to 75% by mass).

本發明之波長轉換構件包含上述波長轉換構件用原料粉末之燒結體。具體而言,本發明之波長轉換構件之特徵在於:螢光體粉末分散於以質量%計含有SiO2 70~90%、B2 O3 10~25%之玻璃基質中而成。以此方式限定玻璃基質之組成之理由如上所述,故省略說明。The wavelength conversion member of the present invention includes a sintered body of the raw material powder for the wavelength conversion member. Specifically, the wavelength conversion member of the present invention is characterized in that the phosphor powder is dispersed in a glass matrix containing 70 to 90% of SiO 2 and 10 to 25% of B 2 O 3 by mass%. The reason for limiting the composition of the glass matrix in this manner is as described above, so the description is omitted.

波長轉換構件用原料粉末之焙燒溫度較佳為玻璃粉末之軟化點±150℃以內,尤佳為玻璃粉末之軟化點±100℃以內。若焙燒溫度過低,則玻璃粉末未充分地流動,不易獲得緻密之燒結體。另一方面,若焙燒溫度過高,則有螢光體粉末成分熱劣化導致發光強度降低之虞。The firing temperature of the raw material powder for the wavelength conversion member is preferably within ±150°C of the softening point of the glass powder, and more preferably within ±100°C of the softening point of the glass powder. If the firing temperature is too low, the glass powder will not flow sufficiently, making it difficult to obtain a dense sintered body. On the other hand, if the firing temperature is too high, the components of the phosphor powder may be thermally degraded and the luminous intensity may decrease.

焙燒較佳為於減壓氛圍中進行。具體而言,焙燒中之氛圍較佳為未達1.013×105 Pa、1000 Pa以下,尤佳為400 Pa以下。藉此,可減少波長轉換構件中殘存之氣泡之量,基於上述理由,可提昇發光強度。再者,可於減壓氛圍中進行整個焙燒步驟,亦可於減壓氛圍中例如僅進行焙燒步驟,於非減壓氛圍之氛圍(例如大氣壓下)中進行焙燒步驟前後之升溫步驟或降溫步驟。The firing is preferably performed in a reduced pressure atmosphere. Specifically, the atmosphere during firing is preferably less than 1.013×10 5 Pa, 1000 Pa or less, and particularly preferably 400 Pa or less. Thereby, the amount of bubbles remaining in the wavelength conversion member can be reduced, and for the above reasons, the luminous intensity can be improved. Furthermore, the entire firing step can be carried out in a reduced pressure atmosphere, for example, only the firing step can be carried out in a reduced pressure atmosphere, and the temperature rising step or the temperature falling step before and after the firing step can be carried out in a non-reduced atmosphere (for example, under atmospheric pressure) .

本發明之波長轉換構件之形狀並無特別限制,例如不僅包含板狀、柱狀、半球狀、半球圓頂狀等其自身具有特定之形狀之構件,亦包含於玻璃基板或陶瓷基板等基材表面形成之覆膜狀之燒結體等。The shape of the wavelength conversion member of the present invention is not particularly limited. For example, it includes not only members having a specific shape such as plate, column, hemispherical, and hemispherical dome, but also includes substrates such as glass substrates or ceramic substrates. Film-like sintered body formed on the surface, etc.

再者,亦可於波長轉換構件表面設置有抗反射膜或微細凹凸結構層。如此,波長轉換構件表面上之光反射率降低,光提取效率得以改善,可提昇發光強度。Furthermore, an anti-reflection film or a fine concavo-convex structure layer may also be provided on the surface of the wavelength conversion member. In this way, the light reflectivity on the surface of the wavelength conversion member is reduced, the light extraction efficiency is improved, and the luminous intensity can be increased.

作為抗反射膜,可列舉包含氧化物、氮化物、氟化物等之單層膜或多層膜(介電多層膜),可藉由濺鍍法、蒸鍍法、塗覆法等形成。抗反射膜之光反射率較佳為於波長380~780 nm下為5%以下、4%以下,尤佳為3%以下。As the anti-reflection film, a single-layer film or a multilayer film (dielectric multilayer film) containing oxide, nitride, fluoride, etc., can be formed by a sputtering method, an evaporation method, a coating method, or the like. The light reflectance of the anti-reflection film is preferably 5% or less, 4% or less, and particularly preferably 3% or less at a wavelength of 380-780 nm.

再者,亦可為含有螢光體粉末之波長轉換層與不含有螢光體粉末之玻璃層之積層體。如此,玻璃層發揮抗反射膜之作用,故可提昇光提取效率。此處,作為玻璃層,可使用玻璃粉末燒結體或塊狀玻璃。使用之玻璃較佳為與波長轉換層中使用之玻璃相同組成,藉此可降低波長轉換層與玻璃層之界面處之光反射損耗。Furthermore, it may also be a laminate of a wavelength conversion layer containing phosphor powder and a glass layer not containing phosphor powder. In this way, the glass layer functions as an anti-reflection film, so the light extraction efficiency can be improved. Here, as the glass layer, a glass powder sintered body or bulk glass can be used. The glass used is preferably the same composition as the glass used in the wavelength conversion layer, so that the light reflection loss at the interface between the wavelength conversion layer and the glass layer can be reduced.

作為微細凹凸結構層,可列舉包含可見光之波長以下之尺寸之蛾眼結構等。作為微細凹凸結構層之製作方法,可列舉奈米壓印法或光微影法。或者亦可藉由利用噴砂、蝕刻、研磨等對波長轉換構件表面進行粗面化而形成微細凹凸結構層。凹凸結構層之表面粗糙度Ra較佳為0.001~0.3 μm、0.003~0.2 μm,尤佳為0.005~0.15 μm。若表面粗糙度Ra過小,則不易獲得所需之抗反射效果。另一方面,若表面粗糙度Ra過大,則光散射變大,發光強度容易降低。Examples of the fine concavo-convex structure layer include a moth-eye structure having a size below the wavelength of visible light. As a method for producing the fine concavo-convex structure layer, nanoimprinting or photolithography can be cited. Alternatively, the surface of the wavelength conversion member may be roughened by sandblasting, etching, polishing, or the like to form a fine uneven structure layer. The surface roughness Ra of the uneven structure layer is preferably 0.001 to 0.3 μm, 0.003 to 0.2 μm, and particularly preferably 0.005 to 0.15 μm. If the surface roughness Ra is too small, it is difficult to obtain the desired anti-reflection effect. On the other hand, if the surface roughness Ra is too large, light scattering becomes large, and the luminous intensity tends to decrease.

圖1中表示本發明之發光裝置之實施形態之一例。如圖1所示,發光裝置1係具備波長轉換構件2及光源3而成。光源3向波長轉換構件2照射激發光L1。入射至波長轉換構件2之激發光L1轉換為另一波長之螢光L2,自與光源3之相反側出射。此時,亦可出射未經波長轉換而透過之激發光L1與螢光L2之合成光。  [實施例]Fig. 1 shows an example of an embodiment of the light-emitting device of the present invention. As shown in FIG. 1, the light-emitting device 1 includes a wavelength conversion member 2 and a light source 3. The light source 3 irradiates the wavelength conversion member 2 with excitation light L1. The excitation light L1 incident on the wavelength conversion member 2 is converted into fluorescent light L2 of another wavelength, and is emitted from the side opposite to the light source 3. At this time, the combined light of the excitation light L1 and the fluorescent light L2 that are transmitted without wavelength conversion can also be emitted. [Example]

以下基於實施例詳細地說明本發明,但本發明並不限定於該等實施例。The present invention will be described in detail below based on examples, but the present invention is not limited to these examples.

表1表示實施例(No.1~No.7)及比較例(No.8)。Table 1 shows Examples (No. 1 to No. 7) and Comparative Examples (No. 8).

[表1]

Figure 108132538-A0304-0001
[Table 1]
Figure 108132538-A0304-0001

(1)玻璃粉末之製作  以成為表1所示之玻璃組成之方式調製原料,使用鉑坩堝於1200~1700℃下熔融1~2小時進行玻璃化。藉由使熔融玻璃流至一對冷卻輥間而成形為膜狀。利用球磨機將獲得之膜狀玻璃成形體粉碎之後,進行分級而獲得平均粒徑D50 為2.5 μm之玻璃粉末。針對獲得之玻璃粉末,藉由下述方法測定全光線透過率、折射率、軟化點。(1) Production of glass powder The raw materials were prepared so as to have the glass composition shown in Table 1, and were melted at 1200 to 1700°C for 1 to 2 hours using a platinum crucible to vitrify. The molten glass is formed into a film shape by flowing the molten glass between a pair of cooling rolls. After pulverizing the obtained film-like glass formed body by a ball mill, it is classified to obtain a glass powder having an average particle diameter D 50 of 2.5 μm. For the obtained glass powder, the total light transmittance, refractive index, and softening point were measured by the following methods.

全光線透過率以如下方式測定。藉由利用模具將玻璃粉末加壓成形而製作壓粉體。將壓粉體於表1所記載之溫度且50 Pa以下之減壓氛圍下進行焙燒,以使獲得之燒結體成為厚度1 mm之方式實施鏡面研磨加工。針對獲得之試樣,利用依據JIS K7105之方法測定全光線透過率。表1中示出波長550 nm下之透過率。The total light transmittance is measured as follows. The glass powder is press-formed with a mold to produce a compact. The powder compact was fired at the temperature described in Table 1 under a reduced pressure atmosphere of 50 Pa or less, and the sintered compact obtained was subjected to mirror polishing so that the thickness of the sintered compact was 1 mm. For the obtained sample, the total light transmittance was measured by the method according to JIS K7105. Table 1 shows the transmittance at a wavelength of 550 nm.

折射率係使用測定用製作之塊狀玻璃試樣,以對氦燈之d射線(587.6 nm)之測定值表示。The refractive index is expressed by the measured value of the d-ray (587.6 nm) of a helium lamp using a bulk glass sample made for measurement.

軟化點係使用纖維伸長法,採用黏度成為107.6 dPa・s之溫度。The softening point uses the fiber elongation method, and the temperature at which the viscosity becomes 10 7.6 dPa·s.

如表1所示,已知作為實施例之No.1~No.7中之玻璃粉末之全光線透過率較高,為72~77.5%,由焙燒導致之失透得以抑制。As shown in Table 1, it is known that the glass powders in No. 1 to No. 7 as examples have a high total light transmittance of 72 to 77.5%, and devitrification caused by firing is suppressed.

(2)波長轉換構件之製作  以使各玻璃粉末試樣獲得同等色度之方式將8~12體積%之YAG螢光體粉末混合於原料粉末中,藉此,獲得波長轉換構件用原料粉末。利用模具將原料粉末加壓成形,製作直徑1 cm之圓柱狀預成形體。藉由將預成形體於表1所記載之溫度且50 Pa以下之減壓氛圍下焙燒之後,對獲得之燒結體實施加工,藉此獲得1.2 mm見方、厚度0.2 mm之波長轉換構件。(2) Fabrication of wavelength conversion member 8-12% by volume of YAG phosphor powder is mixed with raw material powder in such a way that each glass powder sample obtains the same chromaticity, thereby obtaining raw material powder for wavelength conversion member. The raw powder is press-formed with a mold to produce a cylindrical preform with a diameter of 1 cm. After the preform was fired at the temperature described in Table 1 under a reduced pressure atmosphere of 50 Pa or less, the obtained sintered body was processed to obtain a wavelength conversion member having a square of 1.2 mm and a thickness of 0.2 mm.

將上述波長轉換構件載置於以800 mA通電之發光波長445 nm之LED晶片上進行照射試驗。使用通用的發光光譜測定裝置測定積分球內自波長轉換構件上表面發出之光之能量分佈光譜。藉由將獲得之發光光譜與標準比視感度相乘而算出總光束值。將結果示於表1。再者,表中以將No.8之試樣之總光束值設為1之情形之相對值表示。The above-mentioned wavelength conversion member was placed on an LED chip with an emission wavelength of 445 nm, which was energized at 800 mA, for an irradiation test. A general-purpose luminescence spectrometer is used to measure the energy distribution spectrum of the light emitted from the upper surface of the wavelength conversion member in the integrating sphere. The total beam value is calculated by multiplying the obtained luminescence spectrum with the standard specific visual sensitivity. The results are shown in Table 1. Furthermore, the table shows the relative value when the total beam value of the sample No. 8 is set to 1.

如表1所示,作為實施例之No.1~No.7之波長轉換構件之總光束值為1.01~1.05,高於作為比較例之No.8之波長轉換構件。  [產業上之可利用性]As shown in Table 1, the total beam value of the wavelength conversion member No. 1 to No. 7 as an example is 1.01 to 1.05, which is higher than that of the wavelength conversion member No. 8 as a comparative example. [Industrial availability]

本發明之波長轉換構件適合作為白色LED等一般照明或特殊照明(例如投影機光源、車載用前照燈等車載用照明)等之構成構件。The wavelength conversion member of the present invention is suitable as a structural member for general lighting such as white LEDs or special lighting (for example, lighting for vehicles such as projector light sources and headlights for vehicles).

1:發光裝置 2:波長轉換構件 3:光源 L1:激發光 L2:螢光 1: Light-emitting device 2: Wavelength conversion component 3: light source L1: Excitation light L2: Fluorescent

圖1係本發明之一實施形態之發光裝置之模式性側視圖。Fig. 1 is a schematic side view of a light-emitting device according to an embodiment of the present invention.

1:發光裝置 1: Light-emitting device

2:波長轉換構件 2: Wavelength conversion component

3:光源 3: light source

L1:激發光 L1: Excitation light

L2:螢光 L2: Fluorescent

Claims (11)

一種波長轉換構件用原料粉末,其特徵在於含有:以質量%計含有SiO2 70~90%、B2 O3 10~25%之玻璃粉末及螢光體粉末。A raw material powder for a wavelength conversion member, characterized by containing glass powder and phosphor powder containing 70 to 90% of SiO 2 and 10 to 25% of B 2 O 3 by mass%. 如請求項1之波長轉換構件用原料粉末,其以質量%計含有K2 O 0~5%、Al2 O3 0~5%。For example, the raw material powder for wavelength conversion member of claim 1, which contains K 2 O 0 to 5% and Al 2 O 3 0 to 5% by mass %. 如請求項1或2之波長轉換構件用原料粉末,其中玻璃粉末之軟化點為700~1100℃。Such as the raw material powder for wavelength conversion member of claim 1 or 2, wherein the softening point of the glass powder is 700 to 1100°C. 如請求項1至3中任一項之波長轉換構件用原料粉末,其中玻璃粉末之折射率(nd)為1.55以下。The raw material powder for a wavelength conversion member according to any one of claims 1 to 3, wherein the refractive index (nd) of the glass powder is 1.55 or less. 如請求項1至4中任一項之波長轉換構件用原料粉末,其中螢光體粉末為選自由氧化物螢光體、氮化物螢光體、氮氧化物螢光體、氯化物螢光體、醯氯螢光體、鹵化物螢光體、鋁酸鹽螢光體及鹵磷酸氯化物螢光體所組成之群中之至少1種。The raw material powder for a wavelength conversion member according to any one of claims 1 to 4, wherein the phosphor powder is selected from oxide phosphors, nitride phosphors, oxynitride phosphors, and chloride phosphors , At least one of the group consisting of chlorinated phosphors, halide phosphors, aluminate phosphors and halophosphate chloride phosphors. 如請求項1至5中任一項之波長轉換構件用原料粉末,其含有0.01~70質量%之螢光體粉末。The raw material powder for a wavelength conversion member according to any one of claims 1 to 5, which contains 0.01 to 70% by mass of phosphor powder. 一種波長轉換構件,其包含如請求項1至6中任一項之波長轉換構件用原料粉末之燒結體。A wavelength conversion member comprising a sintered body of raw material powder for a wavelength conversion member according to any one of claims 1 to 6. 一種波長轉換構件,其特徵在於:其係螢光體粉末分散於以質量%計含有SiO2 70~90%、B2 O3 10~25%之玻璃基質中而成。A wavelength conversion member characterized in that the phosphor powder is dispersed in a glass matrix containing 70 to 90% of SiO 2 and 10 to 25% of B 2 O 3 by mass%. 一種發光裝置,其特徵在於:其係具備如請求項7或8之波長轉換構件、及向波長轉換構件照射激發光之光源而成。A light-emitting device characterized in that it is provided with the wavelength conversion member of claim 7 or 8 and a light source that irradiates the wavelength conversion member with excitation light. 一種車載用照明,其特徵在於使用如請求項9之發光裝置。An in-vehicle lighting, characterized by using a light-emitting device as claimed in claim 9. 如請求項10之車載用照明,其用作前照燈。Such as the vehicle lighting of claim 10, which is used as a headlight.
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