TW202021699A - Apparatus for slicing an ingot and method of slicing an ingot - Google Patents

Abstract

The present invention provides an apparatus for slicing an ingot and a method of slicing an ingot. The apparatus comprises a power inputting DC power and AC power; an electrolytic cell storing electrolyte; an anode comprising the ingot electrically connecting with a positive electrode of the DC power inputted by the power; a cathode comprising at least one linear electrode positioned in the electrolytic cell, electrically connecting with a negative electrode of the DC power inputted by the power, arranged in a way that the longitudinal direction of the linear electrode cross an axis of the ingot without contacting the ingot with the linear electrode; and a supporting device controlling the relative position of the linear electrode and the ingot. According to the apparatus and method disclosed in the present invention, by controlling the relative position of the linear electrode and the ingot, as well as inputting of the DC power and AC power, helium gas on the linear electrode may be removed on time to ensure the quality of slicing process.

Description

Crystal rod slicing device and method

The present invention relates to the field of semiconductor manufacturing, in particular to an ingot slicing device and method.

At present, the cutting of ingots is dominated by mechanical wire cutting in which steel wires drive slurry. The principle is to use a high-speed steel wire to drive the cutting blade material attached to the steel wire to rub the silicon rod to achieve the cutting effect. Since steel wire is used in the wire cutting process, it is easy to introduce contaminants such as Cu and Fe. At the same time, the wire cutting process is used to cut the ingot, which cannot avoid the loss of section.

An improved method for cutting ingots is to electrochemically cut the ingots by electrolysis. By arranging the ingot and the wire electrode at the anode and the cathode of the electrolytic device containing the electrolyte at the same time, the wire electrode and the portion of the ingot corresponding to the wire electrode when the DC power is applied between the cathode and the anode An electrolysis reaction occurs, causing the crystal rod to be cut. In this process, the electrochemical reaction of hydrogen evolution often occurs on the cathode set as the linear electrode. However, the precipitated hydrogen is often adsorbed on the linear electrode, resulting in a decrease in the surface reaction activity of the linear electrode, and the electrochemical reaction of the subsequent crystal bar cutting The efficiency drops or even cannot be carried out, which affects the ingot cutting effect.

For this reason, it is necessary to propose a new crystal rod slicing device and method to solve the problems in the prior art.

A series of simplified concepts are introduced in the content of the invention, which will be explained in further detail in the detailed implementation section. The inventive content part of the present invention does not mean an attempt to limit the key features and necessary technical features of the claimed technical solution, nor does it mean an attempt to determine the protection scope of the claimed technical solution.

The present invention provides a crystal rod slicing device. The device includes: a power source that outputs direct current and alternating current; an electrolytic cell for storing electrolyte; an anode, the anode includes a crystal rod, and the crystal rod and the direct current output from the power source The positive electrode is electrically connected; the cathode includes at least one linear electrode contained in the electrolytic cell and electrically connected to the negative electrode of the direct current output from the power supply. The length direction of the linear electrode is connected to that of the crystal rod. Axial cross-arrangement, and the linear electrode does not contact the crystal rod; the supporting device is used to control the relative position between the linear electrode and the crystal rod; wherein, when the power source outputs the direct current, the supporting device controls The relative position between the wire electrode and the crystal rod realizes the relative movement close to each other, and the crystal rod slicing process is realized by the relative movement close to each other. During the crystal rod slicing process, an electrochemical reaction occurs on the wire electrode to precipitate When the power source outputs the alternating current, the supporting device controls the relative position between the linear electrode and the crystal rod to stop the crystal rod slicing process, and the gas on the linear electrode desorbs.

Exemplarily, the range of the output voltage of the power supply is 0-50V, and the range of the output current is 0-10A.

Exemplarily, the frequency range of the AC power supply is 0-1000 Hz.

Exemplarily, the power supply further includes a device for adjusting the waveform of the alternating current.

Exemplarily, when the power supply outputs the alternating current, the supporting device controls the relative position between the linear electrode and the crystal rod to realize a relative movement away from each other or relatively static, through the relative movement away from each other or the relative static Stop the ingot slicing process.

Exemplarily, the supporting device includes a linear electrode supporting device arranged on the cathode, and the linear electrode supporting device controls the linear electrode to move along the radial direction of the crystal rod to realize the relative movement close to each other or to move away from each other. The linear electrode supporting device controls the linear electrode to stop moving to realize the relative static.

Exemplarily, the linear electrode supporting device includes at least two guide rollers, and the rotation of the guide roller drives the linear electrode to move along the length direction of the linear electrode.

Exemplarily, the support device includes an ingot support device provided on the anode, the ingot support device controls the ingot to move in a radial direction to achieve the relative movement close to each other or the relative movement away from each other, the ingot The supporting device controls the crystal rod to stop moving to realize the relative stillness.

Exemplarily, the crystal rod supporting device includes a first part and a second part, the first part is electrically connected to the power source, and the second part is a comb tooth structure.

The present invention also provides a crystal rod slicing method, which includes: step S1: at least partially immersing the crystal rod in an electrolytic cell containing electrolyte, and the electrolytic cell is provided with a cathode containing a linear electrode; step S2: adjusting the crystal rod The relative position between the crystal rod and the cathode is such that the axial direction of the crystal rod crosses the length direction of the linear electrode, and the crystal rod does not contact the linear electrode; step S3: the crystal rod and the cathode The relative position between the crystal rod and the linear electrode is controlled while connecting the power supply to realize the slicing of the crystal rod, wherein the step S3 includes: step S31: in the first time period, the power supply outputs direct current, The crystal rod is connected to the positive electrode of the DC power supply, and the cathode is connected to the negative electrode of the DC power supply. The relative position between the crystal rod and the linear electrode is controlled to realize the relative movement close to each other, which is realized by the relative movement close to each other. During the slicing process of the crystal rod, an electrochemical reaction occurs on the linear electrode to precipitate gas; step S32: in the second time period, the power supply outputs alternating current, and the control between the crystal rod and the linear electrode Stop the slicing process of the crystal rod, and the gas on the linear electrode is desorbed; perform step S31 and step S32 in a loop until the crystal rod is sliced.

According to the crystal rod slicing device and method of the present invention, the power supply can output alternating current and direct current at the same time. When the direct current is connected between the cathode and the anode, the relative position between the linear electrode and the crystal rod is controlled by the supporting device to realize the relative movement close to each other. Realize the crystal rod slicing process. When the alternating current is connected between the anode and the cathode, the relative position between the linear electrode and the crystal rod is controlled by the supporting device to stop the crystal rod slicing process. At this time, no electrochemistry occurs on the linear electrode. The reaction removes H ₂ from the linear electrode, and the alternating current loaded on the linear electrode causes electrical changes on the cathode. This process quickly removes the H ₂ adsorbed on the linear electrode, effectively eliminating hydrogen The problem of adsorbing on the linear electrode and affecting the efficiency of the electrochemical reaction of the cathode ensures the efficiency and quality of the ingot cutting.

In the following description, a lot of specific details are given to provide a more thorough understanding of the present invention. However, it is obvious to those skilled in the art that the present invention can be implemented without one or more of these details. In other examples, in order to avoid confusion with the present invention, some technical features known in the art are not described.

In order to thoroughly understand the present invention, a detailed description will be provided in the following description to illustrate the ingot slicing device of the present invention. Obviously, the implementation of the present invention is not limited to the specific details familiar to those skilled in the semiconductor field. The preferred embodiments of the present invention are described in detail as follows. However, in addition to these detailed descriptions, the present invention may also have other embodiments.

It should be noted that the terms used here are only for describing specific embodiments, and are not intended to limit the exemplary embodiments according to the present invention. As used herein, unless the context clearly dictates otherwise, the singular form is also intended to include the plural form. In addition, it should also be understood that when the terms "comprising" and/or "including" are used in this specification, they indicate the presence of the feature, whole, step, operation, element, and/or element, but do not exclude the presence or addition One or more other features, wholes, steps, operations, elements, elements and/or combinations thereof.

Now, exemplary embodiments according to the present invention will be described in more detail with reference to the accompanying drawings. However, these exemplary embodiments can be implemented in many different forms, and should not be construed as being limited to the embodiments set forth herein. It should be understood that these embodiments are provided to make the disclosure of the present invention thorough and complete, and to fully convey the concept of these exemplary embodiments to those of ordinary skill in the art. In the drawings, the thicknesses of layers and regions are exaggerated for clarity, and the same reference numerals are used to denote the same elements, and thus their descriptions will be omitted.

In order to solve the technical problems in the prior art, the present invention provides a crystal rod slicing device, which includes: a power supply, the power supply outputs direct current and alternating current; an electrolytic cell for storing electrolyte; an anode, the anode includes a crystal rod, the crystal The rod is electrically connected to the positive pole of the direct current output from the power supply; the cathode includes at least one linear electrode which is contained in the electrolytic cell and is electrically connected to the negative pole of the direct current output from the power supply. The length direction of the electrode crosses the axial direction of the crystal rod, and the linear electrode is not in contact with the crystal rod; the supporting device is used to control the relative position between the linear electrode and the crystal rod; wherein, when the When the power supply outputs the direct current, the supporting device controls the relative position between the linear electrode and the crystal rod to achieve relative movement close to each other, and realizes the crystal rod slicing process through the close relative movement. An electrochemical reaction occurs on the linear electrode to produce gas. When the power source outputs the alternating current, the supporting device controls the relative position between the linear electrode and the crystal rod to stop the slicing process of the crystal rod. Gas desorption.

Example one

The following is an exemplary description of the ingot slicing device proposed by the present invention with reference to Figs. 1 and 2. Fig. 1 is a schematic diagram of the structure of an ingot slicing device according to an embodiment of the present invention; Fig. 2 is the ingot slicing device in Fig. 1 A schematic front view of the arrangement relative to the linear electrode.

First, referring to FIG. 1, an ingot slicing device according to an embodiment of the present invention includes a power source 100, an electrolytic cell 200, and an anode and a cathode electrically connected to the power source 100, respectively.

The power supply 100 outputs direct current and alternating current. The power supply can be any device that can provide DC power and AC power at the same time. In an example, the power source includes an AC power source and an AC-to-DC device connected to the AC power source, and the AC-to-DC device is turned on and off to provide DC power and AC power respectively. In an example, the power supply includes a DC power supply and an AC power supply and a switching element provided between the two. The switching element controls whether the AC power supply is connected between the cathode and the anode to control whether the power supply outputs DC power or AC power. 1, in this embodiment, the power supply 100 includes a DC power supply 101, an AC power supply 102, and a switching element 103 connected between the DC power supply 101 and the AC power supply 102. When the switching element 103 is connected to the terminal of the DC power source 101, the power source 100 outputs DC power, and when the switching element 103 is connected to the terminal of the AC power source 102, the power source 100 outputs AC power.

It should be understood that the power supply in this embodiment is set to DC power, AC power, and switching elements so that the power supply can output DC and AC power is only exemplary. Those skilled in the art should understand that any power supply that can output DC and AC power is applicable. In the present invention.

The electrolytic cell 200 includes an electrolyte 201, which is used for electrochemical reaction with the silicon crystal rod under the action of a DC power supply.

The anode includes an ingot 300, wherein the ingot 300 is electrically connected to the positive pole of the direct current output from the power supply 100. In this embodiment, the crystal rod 300 is electrically connected to the positive electrode of the DC power supply 101 in the power supply 100.

The cathode is contained in the electrolytic cell 200 and includes at least one linear electrode 400. The length direction of the linear electrode 400 is arranged to cross the axial direction of the ingot 300, and the linear electrode 400 and the ingot 300 are not in contact with each other. The linear electrode 400 is electrically connected to the negative electrode of the DC power output from the power source 100. In this embodiment, the linear electrode 400 is electrically connected to the negative electrode of the DC power source 101 in the power source 100.

Referring to FIG. 2, there is shown a schematic front view of the arrangement of the linear electrode relative to the crystal rod, wherein the linear electrode 400 is contained in the electrolyte 201 of the electrolytic cell 200, and the length direction of the linear electrode 400 is perpendicular to the axial direction of the crystal rod 300. And the linear electrode 400 is not in contact with the crystal rod 300. In the above configuration of the power supply, the electrolytic cell, the cathode and the anode, the slicing of the crystal rod 300 is realized by the relative movement between the linear electrode 400 and the crystal rod 300 close to each other.

Exemplarily, the material of the linear electrode 400 may be any non-metal conductive material. Specifically, the material of the linear electrode 400 may be carbon fiber, carbon-coated metal wire, or the like. Exemplarily, the diameter of the linear electrode ranges from 50-150 μm.

在陰極線狀電極上發生如下電化學反應：

Illustratively, the electrolyte 201 includes a solution containing hydrofluoric acid. The length direction of the linear electrode 400 is intersected with the axial direction of the ingot 300, and the linear electrode 400 is not in contact with the ingot 300. When the power supply 100 applies a voltage or current between the cathode and the anode, the linear electrode 400 and An electrochemical reaction occurs in the part of the crystal rod 300 that is disposed opposite to the linear electrode 400. Among them, the crystal rod located on the anode undergoes the following electrochemical reactions:

The following electrochemical reactions occur on the cathode wire electrode:

The electrochemical method is used for cutting. Compared with the mechanical cutting method using the cutting wire, the cut loss during the cutting of the ingot is effectively reduced. At the same time, the electrochemical method of cutting the ingot to achieve non-contact cutting is effectively avoided. Mechanical damage, wafer warpage, and contamination from contact cutting. At the same time, the use of electrochemically cut wafers does not require further processing such as chemical etching, which greatly simplifies the processing flow of the cut wafers.

In the above electrochemical reaction, H ₂ is precipitated on the cathode, and H _{2 is} often adsorbed on the linear electrode 400, which reduces the surface reaction activity of the linear electrode 400, affects the subsequent electrochemical reaction efficiency, and further affects the ingot slicing rate and slicing quality . The present invention sets the power supply to output direct current and alternating current, controls the relative position between the linear electrode and the crystal rod to achieve relative movement close to each other, and makes the power supply output direct current to cause the electrochemical reaction between the crystal rod and the linear electrode and With the relative movement close to each other, the cutting of the crystal rod is realized; as the cutting of the crystal rod progresses, H ₂ is precipitated on the linear electrode of the cathode and accumulated on the linear electrode, so that the linear electrode and the crystal are controlled when the power supply outputs alternating current. The relative positions between the rods achieve relative movement away from each other or relatively static. At this time, no electrochemical reaction occurs on the linear electrode to remove H ₂ from the linear electrode, and the alternating current loaded on the linear electrode causes Electrical changes occur on the cathode. This process quickly removes the H ₂ adsorbed on the linear electrode, which effectively solves the problem that hydrogen is adsorbed on the linear electrode and affects the efficiency of the cathode electrochemical reaction, and ensures the efficiency of crystal rod cutting And quality.

Exemplarily, the range of the output voltage of the power supply is 0-50V, and the range of the output current is 0-10A. The slicing rate of the ingot can be adjusted by adjusting the output voltage and current of the power supply to match the number of ingot slices. Exemplarily, the frequency range of the AC power supply is 0-1000 Hz. Further, the power supply also includes a device for adjusting the waveform of the alternating current, so that the alternating current output by the power supply has different waveforms, such as rectangular, sine, and triangular waves. By outputting alternating currents of different frequencies or waveforms, different H ₂ removal rates can be matched at different slicing rates, thereby increasing the ingot slicing rate.

Exemplarily, the present invention controls the relative movement between the crystal rod and the linear electrode by providing a support device that supports the crystal rod or the linear electrode, so as to realize the relative movement close to each other, the relative movement away from each other, or the relative static .

Exemplarily, the supporting device includes a linear electrode supporting device provided on the cathode, and the linear electrode supporting device controls the linear electrode to move along the radial direction of the crystal rod to realize the relative movement close to each other or to move away from each other. In relative motion, the linear electrode supporting device controls the linear electrode to stop moving to achieve the relative static. In this case, the crystal rod is always at rest. As shown in FIG. 1, the supporting device includes a linear electrode supporting device 401 provided on the cathode. The wire electrode support device 401 supports the wire electrode 400 and controls the radial movement of the wire electrode 400 along the crystal rod 300 to realize the relative movement between the wire electrode 400 and the crystal rod 300 close to each other or away from each other, When the linear electrode supporting device 401 supports the linear electrode 400 to stop moving, the linear electrode 400 and the crystal rod 300 are relatively static.

It should be understood that the setting of the supporting device as the linear electrode supporting device in this embodiment is only exemplary, and those skilled in the art should understand that any device that can control the relative position between the linear electrode and the crystal rod can achieve this invention.

Exemplarily, the linear electrode supporting device 401 also controls the linear electrode 400 to move along its length direction. For this reason, the linear electrode support device 401 is used to support the linear electrode 400 to move in the longitudinal direction, so that the H ₂ adsorbed on the surface of the linear electrode 400 is removed with the movement of the linear electrode, which further accelerates the H ₂ removal efficiency , Further improving the influence of H ₂ adsorption on the surface of the electrochemical cutting.

Illustratively, the linear electrode supporting device includes at least two guide rollers. As shown in FIG. 1, the linear electrode supporting device 401 is configured as two guide rollers. Through the rotation of the guide rollers, the guide rollers drive the linear electrode 400 to move in the length direction. The linear electrode support device 401 is set as a guide roller on the one hand to support the linear electrode 400, so that the linear electrode 400 is in a tensioned state, and on the other hand, the linear electrode 400 is driven along the length direction by the rotation of the guide roller. Moving, in this configuration, the linear electrode completely desorbs the H ₂ on the adsorbed linear electrode through the contact with the guide roller when it moves through the guide roller, so that the H ₂ desorption efficiency is high.

Referring to FIG. 3, there is shown a schematic front view of the crystal rod in FIG. 2 relative to the linear electrode and the linear electrode support device. The linear electrode 400 is contained in the electrolyte 201 of the electrolytic cell 200, and the linear electrode 400 The extending direction is perpendicular to the axial direction of the crystal rod 300, and the linear electrode 400 does not contact the crystal rod 300. The linear electrode support device 401 configured as a guide roller rotates along the direction indicated by the arrow CC, and drives the linear electrode 400 to move along its length extension direction, thereby desorbing the H ₂ adsorbed on the surface during the electrochemical reaction. Exemplarily, the material of the guide roller includes graphite, carbon-coated metal material and conductive ceramic. In this embodiment, the material of the guide roller is graphite. Exemplarily, the linear velocity range at which the guide roller drives the linear electrode to rotate is 0-10 mm/s.

When the wire electrode supporting device is provided as a guide roller, a wire groove is provided on the guide roller to fix the position of the wire electrode. Exemplarily, the distance between the linear electrodes is set by setting the distance of the wire groove on the guide roller. Exemplarily, the range of the distance between adjacent wire grooves is 100 μm -1500 μm. Since the thickness of the wafer in the existing semiconductor manufacturing process is often set to 100µm -1500µm, the distance between the wire grooves is set to 100µm -1500µm, so that the distance between adjacent linear electrodes is 100µm -1500µm. The cutting of the crystal rod by the shaped electrode forms a cut wafer.

In an embodiment according to the present invention, a solution containing hydrofluoric acid and acetic acid is used as the electrolyte, wherein the volume percentage of hydrofluoric acid is 1-10%, and the volume percentage of acetic acid is 0-30%.

Exemplarily, the angle range between the length direction of the crystal rod 300 and the length direction of the linear electrode 400 is 89.5°-90.5°. In this angle range, the axial direction of the ingot 300 is perpendicular to the extending direction of the linear electrode 400, so that the slicing is carried out along the radial direction of the ingot 300, and the cut wafer meets the requirements of the semiconductor manufacturing process for wafer .

According to an embodiment of the present invention, the ingot slicing device further includes a PH control device for controlling the PH in the electrolytic cell. Illustratively, the electrolyte is configured to include a mixture of hydrofluoric acid and acetic acid. Among them, acetic acid is used as a buffer to adjust the pH value of the entire electrolyte on the one hand, and on the other hand it can increase the conductivity of the electrolyte. Exemplarily, the PH control device includes a PH detector and an acetic acid supply device.

According to an embodiment of the present invention, the ingot slicing device further includes a temperature control device for controlling the temperature of the cathode, the anode, and the dielectric substance. Exemplarily, the temperature control device includes a thermometer and a water cooling device. Exemplarily, the temperature control device controls the temperature of the cathode, the anode and the dielectric substance to be between 22-24°C. Using a temperature control device to control the temperature of the cathode, anode and dielectric can control the stability of the electrochemical reaction environment, effectively avoiding the problem of unstable slice quality due to the influence of temperature on the electrochemical reaction rate.

According to an embodiment of the present invention, the crystal rod slicing device further includes a hydrogen collecting device for collecting the hydrogen generated by the electrochemical reaction on the cathode. In order to avoid the danger caused by the hydrogen produced by the cathode, the entire ingot slicing device is set up as a closed system, and at the same time, the gas in the closed system is collected by a pump, etc., to collect the hydrogen.

According to an embodiment of the present invention, the crystal rod slicing device further includes an electrolyte circulation system for replenishing the electrolyte into the electrolytic cell. Exemplarily, the electrolyte circulation system includes an acid-resistant pump and a screening program. The electrolyte is pumped out through the acid-resistant pump. The screening program filters out the metals and particles, and then loops the filtered electrolyte into the electrolytic cell to effectively improve the electrolyte. The efficiency of use reduces production costs.

The following is an exemplary description of an ingot slicing device proposed by the present invention with reference to FIGS. 1, 3A and 3B. FIG. 1 is a schematic structural diagram of an ingot slicing device according to an embodiment of the present invention; FIGS. 3A and 3B are The cross-sectional structure diagram of the crystal rod supporting device in FIG. 1 is taken along the AA direction and the BB direction, respectively.

In this embodiment, the power supply, cathode, and anode in the ingot slicing device can adopt the same configuration as in the first embodiment. The only difference is that the supporting device in this embodiment is set as the ingot supporting device on the anode. The crystal rod support device controls the crystal rod to move along the radial direction to realize the relative movement close to each other and the relative movement away from each other, and the crystal rod support device controls the crystal rod to stop moving to realize the relative static.

As shown in FIG. 1, the supporting device is set as a crystal rod support device 301 that supports the crystal rod 300 on the anode. The crystal rod support device 301 controls the movement of the crystal rod 300 along its radial direction, thereby realizing the crystal rod 300 and the linear electrode 400. When the crystal rod supporting device 301 controls the crystal rod 300 to stop moving, the crystal rod 300 and the linear electrode 400 are relatively static.

Exemplarily, the crystal rod supporting device includes a first part and a second part, the first part is electrically connected to the power source, and the second part is a comb tooth structure.

3A and 3B, which show a schematic cross-sectional structure of the crystal rod supporting device in FIG. 1 along the A-A direction and the B-B direction. The ingot support device 301 is used to support the ingot 300 and includes a first part 3011 and a second part 3012. The first part 3011 is electrically connected to the power supply 100, and the second part 3012 is in contact with the ingot 300. Among them, the first part 3011 is arranged in a strip shape, and the second part 3012 is arranged in a comb tooth structure. Further, as shown in FIG. 1, the second part 3012 configured as a comb tooth structure includes a convex part 30121 configured as a comb tooth and a concave part 30122 located between the comb teeth. The linear electrode 400 is arranged corresponding to the concave portion 30122 of the comb-tooth structure. During the electrolysis reaction, the portion on the crystal rod 300 corresponding to the concave portion 30122 forms the anode in the electrolytic reaction corresponding to the linear electrode 400 on the cathode, and the concave portion 30122 corresponds to The part of the crystal rod 300 is consumed by the electrochemical reaction, while the part of the crystal rod 300 corresponding to the convex portion 30121 does not participate in the reaction and remains, and finally forms the effect of cutting the crystal rod along the concave portion on the comb tooth structure. Exemplarily, referring to FIG. 3A, the width D of the convex portion 30121 of the comb-tooth structure on the second portion 3012 is set to the thickness of the wafer formed after the ingot is sliced. Exemplarily, the thickness of the silicon wafer ranges from 100 μm to 1500 μm, and the width of the convex portion on the comb tooth structure ranges from 100 μm to 1500 μm. In one example, the thickness of the silicon wafer is 750 µm, and the width of the convex portion of the comb tooth structure is 750 µm. Exemplarily, the size range of the recess is 80-200 μm.

Exemplarily, the material of the crystal rod supporting device 301 may be any non-metallic conductive material. Specifically, the crystal rod supporting device 301 can be set to graphite. Carbon coated metal materials or conductive ceramics, etc.

Further, illustratively, the ingot supporting device 301 and the ingot 300 are connected by conductive glue, so as to realize the electrical connection between the ingot supporting device 301 and the ingot 300.

It should be understood that, in this embodiment, the setting of the supporting device as the crystal rod support device in this embodiment is only exemplary, and those skilled in the art should understand that any device that can control the relative position between the linear electrode and the crystal rod is not an example. The invention can be realized.

At the same time, it should also be understood that the setting of the supporting device as a linear electrode supporting device in the first embodiment and the setting of the supporting device as a crystal rod supporting device in the second embodiment are exemplary. The support device can also include a linear electrode support device and a crystal rod support device at the same time, and the relative position between the linear electrode and the crystal rod can be controlled by controlling the movement rate of the linear electrode and the crystal rod respectively by controlling the two, thereby realizing Relative motion close to each other, relative motion away from each other, or relative static. In short, those skilled in the art should understand that any device that can control the relative position between the linear electrode and the crystal rod can implement the present invention.

The present invention also provides a wafer cutting method, including: step S1: at least partially immersing the crystal rod in an electrolytic cell containing an electrolyte, and the electrolytic cell is provided with a cathode containing a linear electrode; step S2: adjusting the crystal rod and The relative position between the cathodes is such that the axial direction of the crystal rod crosses the length direction of the linear electrode, and the crystal rod is not in contact with the linear electrode; step S3: between the crystal rod and the cathode The relative position between the crystal rod and the linear electrode is controlled to realize the slicing of the crystal rod while the power is switched on. Step S3 includes: Step S31: In the first time period, the power supply outputs direct current, and The crystal rod is connected to the positive pole of the DC power supply, and the cathode is connected to the negative pole of the DC power supply. The relative position between the crystal rod and the linear electrode is controlled to achieve a relative movement close to each other, and the crystal is realized by the relative movement close to each other. During the rod slicing process, an electrochemical reaction occurs on the linear electrode during the crystal rod slicing process; step S32: in the second time period, the power supply outputs alternating current to control the crystal rod and the linear electrode The relative position stops the slicing process of the crystal rod, and the gas on the linear electrode is desorbed; the step S31 and the step S32 are performed in a loop until the slicing of the crystal rod is completed.

The ingot cutting method of the present invention will be further described with reference to the ingot cutting device shown in FIG. 1.

First, perform step 1: at least partially immerse the crystal rod in an electrolytic cell containing an electrolyte, and the electrolytic cell is provided with a cathode containing a linear electrode.

The crystal rod 300 is at least partially immersed in the electrolyte 201, and the crystal rod 300 is spaced apart from the linear electrode 400 on the cathode. An ingot supporting device 301 is provided to support the ingot 300, and the ingot supporting device 301 is electrically connected to the ingot 300, and the ingot 300 is electrically connected to the power supply 100 through the ingot supporting device 301. The power supply 100 can output direct current and alternating current. Exemplarily, the power supply 100 includes a DC power supply 101, an AC power supply 102, and a switching element 103 connected between the DC power supply 101 and the AC power supply 102. When the switching element 103 is connected to the terminal of the DC power source 101, the power source 100 outputs DC power, and when the switching element 103 is connected to the terminal of the AC power source 102, the power source 100 outputs AC power.

Then, step S2 is performed: adjusting the relative position between the crystal rod and the cathode, so that the axial direction of the crystal rod crosses the length direction of the linear electrode, and the crystal rod does not contact the linear electrode.

The relative position between the crystal rod 300 and the linear electrode 400 is adjusted so that the axial direction of the crystal rod 300 crosses the length direction of the linear electrode 400 and the crystal rod 300 does not contact the linear electrode 400. Exemplarily, the linear electrode 400 is contained in the electrolyte 201 of the electrolytic cell 200, the length direction of the linear electrode 400 is perpendicular to the axial direction of the crystal rod 300, and the linear electrode 400 does not contact the crystal rod 300.

Then, step S3 is performed: while power is connected between the crystal rod and the cathode, the relative position between the crystal rod and the linear electrode is controlled to realize the slicing of the crystal rod, wherein the step S3 includes: step S31 : In the first time period, the power supply outputs DC power, the crystal rod is connected to the positive pole of the DC power supply, and the cathode is connected to the negative pole of the DC power supply, and the relative positions between the crystal rod and the linear electrode are controlled to realize each other The close relative movement realizes the crystal rod slicing process through the close relative movement. During the crystal rod slicing process, an electrochemical reaction occurs on the linear electrode to precipitate gas; step S32: in the second time period, the power supply outputs Alternating current is used to control the relative position between the crystal rod and the linear electrode to stop the slicing process of the crystal rod, and the gas on the linear electrode is desorbed; the steps S31 and S32 are performed in a loop until the crystal rod Complete the slicing.

在陰極線狀電極上發生如下電化學反應：

As shown in FIG. 1, in step S31, when the switching element 103 is connected to the end of the DC power source 101 in the first time period, the power source 100 outputs DC power. At this time, the ingot support device 301 controls the ingot 300 to move along the radial direction to realize the relative movement between the ingot 300 and the linear electrode 400 close to each other, and realize the ingot slicing process through the relative movement close to each other. During the above process of slicing the ingot, the ingot on the anode undergoes the following electrochemical reactions:

The following electrochemical reactions occur on the cathode wire electrode:

The H ₂ precipitated on the cathode tends to be adsorbed on the linear electrode 400, so that the surface reaction activity of the linear electrode 400 is reduced, which affects the subsequent electrochemical reaction efficiency, and further affects the ingot slicing rate and slicing quality.

In step S32, in the second time period, when the switching element 103 is connected to the AC power source 102, the power source 100 outputs AC power. At this time, the ingot support device 301 controls the ingot 300 to stop moving to realize that the ingot 300 and the wire electrode 400 are relatively stationary with each other. At this time, the ingot slicing process stops, and no electrochemical reaction occurs on the wire electrode at this time. The H ₂ is removed from the linear electrode, and the electrical change occurs on the cathode due to the alternating current loaded on the linear electrode. This process quickly removes the H ₂ adsorbed on the linear electrode. Perform this step S31 in a loop , And step S32, until the crystal rod is sliced, which effectively solves the problem of hydrogen adsorption on the linear electrode and affects the efficiency of the cathode electrochemical reaction, and ensures the efficiency and quality of the crystal rod cutting.

In summary, according to the crystal rod slicing device and method of the present invention, the power supply can output alternating current and direct current at the same time. When the direct current is connected between the cathode and the anode, the relative movement of the linear electrode and the crystal rod is realized by controlling the relative position of the linear electrode and the crystal rod. In the crystal rod slicing process, when the alternating current is connected between the anode and the cathode, the relative position between the linear electrode and the crystal rod is controlled to stop the crystal rod slicing process. At this time, no electrochemical reaction occurs on the linear electrode to make H ₂ from The H ₂ adsorbed on the linear electrode is quickly removed due to the alternating current loaded on the linear electrode. This process makes the H ₂ adsorbed on the linear electrode quickly removed, which effectively solves the problem of hydrogen adsorption on the linear electrode. The problem of affecting the efficiency of the electrochemical reaction of the cathode ensures the efficiency and quality of the ingot cutting.

The present invention has been described by the above-mentioned embodiments, but it should be understood that the above-mentioned embodiments are only for the purpose of illustration and description, and are not intended to limit the present invention to the scope of the described embodiments. In addition, those skilled in the art can understand that the present invention is not limited to the above-mentioned embodiments, and more variations and modifications can be made according to the teachings of the present invention, and these variations and modifications fall under the protection of the present invention. Within the range. The protection scope of the present invention is defined by the appended claims and their equivalent scope.

100: Power 101: DC power supply 102: AC power 103: switching element 200: electrolytic cell 201: Electrolyte 300: crystal rod 301: Crystal rod support device 3011: Part One 3012: Part Two 30121: convex 30122: recess 400: wire electrode 401: Wire electrode support device

The following drawings of the present invention are used here as a part of the present invention for understanding the present invention. The accompanying drawings show the embodiments of the present invention and the description thereof to explain the principle of the present invention.

In the attached picture: Fig. 1 is a schematic structural diagram of an ingot slicing device according to an embodiment of the present invention; 2 is a schematic front view of the crystal rod in FIG. 1 being arranged relative to the linear electrode; 3A and 3B are schematic diagrams of the cross-sectional structure of the crystal rod supporting device in FIG. 1 taken along the A-A direction and the B-B direction, respectively.

100: Power

101: DC power supply

102: AC power

103: switching element

200: electrolytic cell

201: Electrolyte

300: crystal rod

301: Crystal rod support device

400: wire electrode

401: Wire electrode support device

Claims (10)

A crystal rod slicing device includes: Power supply, which outputs DC and AC power; Electrolysis cell, used to store electrolyte; An anode, the anode includes a crystal rod, and the crystal rod is electrically connected to the positive electrode of the direct current output from the power supply; The cathode includes at least one linear electrode, the linear electrode is accommodated in the electrolytic cell and electrically connected to the negative electrode of the direct current output from the power source, and the length direction of the linear electrode is intersected with the axial direction of the crystal rod, And the linear electrode is not in contact with the crystal rod; and Supporting device for controlling the relative position between the linear electrode and the crystal rod; Wherein, when the power supply outputs the direct current, the supporting device controls the relative position between the linear electrode and the crystal rod to realize the relative movement close to each other, and realizes the crystal rod slicing process through the close relative movement. During the slicing process, an electrochemical reaction occurs on the wire electrode to produce gas. When the power source outputs the alternating current, the supporting device controls the relative position between the wire electrode and the crystal rod to stop the crystal rod slicing process, and the gas is removed from Desorption on the wire electrode. For the ingot slicing device described in item 1 of the scope of patent application, the power supply output voltage ranges from 0-50V, and the output current ranges from 0-10A. According to the crystal rod slicing device described in item 1 of the scope of patent application, the frequency range of the AC power supply is 0-1000 Hz. According to the ingot slicing device described in item 1 of the scope of patent application, the power supply further includes a device for adjusting the waveform of the alternating current. The crystal rod slicing device according to the first item of the scope of patent application, wherein, when the power source outputs the alternating current, the supporting device controls the relative position between the linear electrode and the crystal rod to realize relative movement or relative movement away from each other Still, the ingot slicing process is stopped by the relative movement away from each other or the relative stillness. The ingot slicing device according to the fifth item of the scope of patent application, wherein the supporting device includes a linear electrode supporting device arranged on the cathode, and the linear electrode supporting device controls the linear electrode along the diameter of the ingot Moving toward each other realizes the relative movement close to each other or the relative movement away from each other, and the linear electrode supporting device controls the linear electrode to stop moving to realize the relative stillness. According to the ingot slicing device as described in item 6 of the scope of patent application, the linear electrode supporting device includes at least two guide rollers, and the rotation of the guide roller drives the linear electrode to move along the length direction of the linear electrode. The ingot slicing device according to item 5 of the scope of patent application, wherein the supporting device includes an ingot supporting device arranged on the anode, and the ingot supporting device controls the ingot to move along the radial direction to realize the close to each other The relative motion of the crystal rod or the relative motion away from each other, the crystal rod support device controls the crystal rod to stop moving to realize the relative static. The crystal rod slicing device according to item 8 of the scope of patent application, wherein the crystal rod supporting device includes a first part and a second part, the first part is electrically connected to the power source, and the second part is a comb structure. A crystal rod slicing method, including: Step S1: at least partially immerse the crystal rod in an electrolytic cell containing an electrolyte, and the electrolytic cell is provided with a cathode containing a linear electrode; Step S2: Adjust the relative position between the crystal rod and the cathode so that the axial direction of the crystal rod crosses the length direction of the linear electrode, and the crystal rod does not contact the linear electrode; and Step S3: when power is switched on between the crystal rod and the cathode, the relative position between the crystal rod and the linear electrode is controlled to realize the slicing of the crystal rod; Wherein, this step S3 includes: Step S31: In the first time period, the power supply outputs direct current, the crystal rod is connected to the positive pole of the DC power supply, and the cathode is connected to the negative pole of the DC power supply, and the relative position between the crystal rod and the linear electrode is controlled A relative movement close to each other is realized, and the crystal rod slicing process is realized through the relative movement close to each other. During the crystal rod slicing process, an electrochemical reaction occurs on the linear electrode to precipitate gas; Step S32: In the second time period, the power supply outputs alternating current, and controls the relative position between the ingot and the linear electrode to stop the ingot slicing process, and the gas is desorbed from the linear electrode; and This step S31 and step S32 are performed in a loop until the slicing of the ingot is completed.

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