TW202013429A - 電漿處理裝置 - Google Patents

電漿處理裝置 Download PDF

Info

Publication number
TW202013429A
TW202013429A TW108140483A TW108140483A TW202013429A TW 202013429 A TW202013429 A TW 202013429A TW 108140483 A TW108140483 A TW 108140483A TW 108140483 A TW108140483 A TW 108140483A TW 202013429 A TW202013429 A TW 202013429A
Authority
TW
Taiwan
Prior art keywords
frequency
plasma
frequency power
antenna
frequency antenna
Prior art date
Application number
TW108140483A
Other languages
English (en)
Chinese (zh)
Inventor
山涌純
松土龍夫
輿水地塩
Original Assignee
日商東京威力科創股份有限公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 日商東京威力科創股份有限公司 filed Critical 日商東京威力科創股份有限公司
Publication of TW202013429A publication Critical patent/TW202013429A/zh

Links

Images

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/321—Radio frequency generated discharge the radio frequency energy being inductively coupled to the plasma
    • H01J37/3211—Antennas, e.g. particular shapes of coils
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02296—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer
    • H01L21/02299—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer pre-treatment
    • H01L21/02312—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer pre-treatment treatment by exposure to a gas or vapour
    • H01L21/02315—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer pre-treatment treatment by exposure to a gas or vapour treatment by exposure to a plasma
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/321—Radio frequency generated discharge the radio frequency energy being inductively coupled to the plasma
    • H01J37/32119—Windows
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/32174—Circuits specially adapted for controlling the RF discharge
    • H01J37/32183—Matching circuits
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32623—Mechanical discharge control means
    • H01J37/32651—Shields, e.g. dark space shields, Faraday shields
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
    • H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
    • H01L21/02263—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase
    • H01L21/02271—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition
    • H01L21/02274—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition in the presence of a plasma [PECVD]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
    • H05H1/00—Generating plasma; Handling plasma
    • H05H1/24—Generating plasma
    • H05H1/46—Generating plasma using applied electromagnetic fields, e.g. high frequency or microwave energy

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Power Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Electromagnetism (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Plasma Technology (AREA)
  • Drying Of Semiconductors (AREA)
TW108140483A 2014-11-05 2015-10-28 電漿處理裝置 TW202013429A (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2014-225241 2014-11-05
JP2014225241A JP6582391B2 (ja) 2014-11-05 2014-11-05 プラズマ処理装置

Publications (1)

Publication Number Publication Date
TW202013429A true TW202013429A (zh) 2020-04-01

Family

ID=55853446

Family Applications (2)

Application Number Title Priority Date Filing Date
TW104135442A TWI679673B (zh) 2014-11-05 2015-10-28 電漿處理裝置
TW108140483A TW202013429A (zh) 2014-11-05 2015-10-28 電漿處理裝置

Family Applications Before (1)

Application Number Title Priority Date Filing Date
TW104135442A TWI679673B (zh) 2014-11-05 2015-10-28 電漿處理裝置

Country Status (4)

Country Link
US (1) US10325758B2 (enExample)
JP (1) JP6582391B2 (enExample)
KR (2) KR101974691B1 (enExample)
TW (2) TWI679673B (enExample)

Families Citing this family (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US10714960B2 (en) * 2015-12-22 2020-07-14 Intel Corporation Uniform wireless charging device
CN106920732B (zh) * 2015-12-25 2018-10-16 中微半导体设备(上海)有限公司 一种电极结构及icp刻蚀机
US20190088449A1 (en) * 2017-09-21 2019-03-21 Semes Co., Ltd. Substrate treating apparatus and substrate treating method
JP7175239B2 (ja) 2018-06-22 2022-11-18 東京エレクトロン株式会社 制御方法、プラズマ処理装置、プログラム及び記憶媒体
DE102018116637A1 (de) * 2018-07-10 2020-01-16 TRUMPF Hüttinger GmbH + Co. KG Leistungsversorgungseinrichtung und Betriebsverfahren hierfür
JP7139181B2 (ja) * 2018-07-26 2022-09-20 ワイエイシイテクノロジーズ株式会社 プラズマ処理装置
WO2020141806A2 (ko) * 2018-12-31 2020-07-09 인투코어테크놀로지 주식회사 플라즈마 발생 장치 및 그 동작 방법
US11515122B2 (en) 2019-03-19 2022-11-29 Tokyo Electron Limited System and methods for VHF plasma processing
JP7579766B2 (ja) * 2020-10-06 2024-11-08 東京エレクトロン株式会社 プラズマ処理装置及びプラズマ処理用コイル
US11401608B2 (en) * 2020-10-20 2022-08-02 Sky Tech Inc. Atomic layer deposition equipment and process method
CN112331546B (zh) * 2020-10-26 2024-06-21 北京北方华创微电子装备有限公司 半导体工艺设备
WO2022146648A1 (en) 2020-12-28 2022-07-07 Mattson Technology, Inc. Induction coil assembly for plasma processing apparatus
KR102323580B1 (ko) * 2021-04-01 2021-11-09 피에스케이 주식회사 플라즈마 발생 유닛 및 기판 처리 장치
JP2022185603A (ja) * 2021-06-03 2022-12-15 株式会社アルバック プラズマ処理装置
CN114171920B (zh) * 2021-12-07 2025-05-23 国开启科量子技术(北京)有限公司 一种基于低温螺旋谐振器的天线调节系统
JP7650834B2 (ja) * 2022-02-16 2025-03-25 東京エレクトロン株式会社 プラズマ処理装置

Family Cites Families (20)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5814762B2 (ja) 1975-08-25 1983-03-22 日立電線株式会社 アンテナツキケ−ブル
US5731565A (en) * 1995-07-27 1998-03-24 Lam Research Corporation Segmented coil for generating plasma in plasma processing equipment
US6045618A (en) * 1995-09-25 2000-04-04 Applied Materials, Inc. Microwave apparatus for in-situ vacuum line cleaning for substrate processing equipment
JP3739137B2 (ja) * 1996-06-18 2006-01-25 日本電気株式会社 プラズマ発生装置及びこのプラズマ発生装置を使用した表面処理装置
US6164241A (en) * 1998-06-30 2000-12-26 Lam Research Corporation Multiple coil antenna for inductively-coupled plasma generation systems
US6441555B1 (en) * 2000-03-31 2002-08-27 Lam Research Corporation Plasma excitation coil
US7096819B2 (en) * 2001-03-30 2006-08-29 Lam Research Corporation Inductive plasma processor having coil with plural windings and method of controlling plasma density
KR101038204B1 (ko) * 2004-02-25 2011-05-31 주성엔지니어링(주) 플라즈마 발생용 안테나
US20070170867A1 (en) * 2006-01-24 2007-07-26 Varian Semiconductor Equipment Associates, Inc. Plasma Immersion Ion Source With Low Effective Antenna Voltage
US8075734B2 (en) * 2007-07-06 2011-12-13 Applied Materials, Inc. Remote inductively coupled plasma source for CVD chamber cleaning
JP5227245B2 (ja) 2009-04-28 2013-07-03 東京エレクトロン株式会社 プラズマ処理装置
CN102056395B (zh) * 2009-10-27 2014-05-07 东京毅力科创株式会社 等离子体处理装置和等离子体处理方法
KR101757922B1 (ko) * 2009-10-27 2017-07-14 도쿄엘렉트론가부시키가이샤 플라즈마 처리 장치
JP5592098B2 (ja) * 2009-10-27 2014-09-17 東京エレクトロン株式会社 プラズマ処理装置及びプラズマ処理方法
JP5606821B2 (ja) * 2010-08-04 2014-10-15 東京エレクトロン株式会社 プラズマ処理装置
JP5800547B2 (ja) * 2011-03-29 2015-10-28 東京エレクトロン株式会社 プラズマ処理装置及びプラズマ処理方法
JP5781349B2 (ja) * 2011-03-30 2015-09-24 東京エレクトロン株式会社 プラズマ処理装置
KR101328520B1 (ko) * 2012-05-17 2013-11-20 한양대학교 산학협력단 플라즈마 장비
WO2014073395A1 (ja) * 2012-11-09 2014-05-15 株式会社村田製作所 電気部品およびアンテナ
WO2016007594A1 (en) * 2014-07-08 2016-01-14 Witricity Corporation Resonators for wireless power transfer systems

Also Published As

Publication number Publication date
JP2016091812A (ja) 2016-05-23
TWI679673B (zh) 2019-12-11
KR20160053824A (ko) 2016-05-13
US20160126063A1 (en) 2016-05-05
KR20190045141A (ko) 2019-05-02
US10325758B2 (en) 2019-06-18
JP6582391B2 (ja) 2019-10-02
KR101974691B1 (ko) 2019-05-02
TW201630031A (zh) 2016-08-16
KR102033873B1 (ko) 2019-10-17

Similar Documents

Publication Publication Date Title
TWI679673B (zh) 電漿處理裝置
US11832373B2 (en) Plasma processing apparatus
KR101998520B1 (ko) 플라즈마 처리 장치 및 플라즈마 발생 유닛
KR101852310B1 (ko) 플라즈마 처리 장치 및 플라즈마 처리 방법
CN109755091B (zh) 等离子体处理装置
JP2022012933A (ja) プラズマ処理装置