TW202006778A - Method for alignment of a light beam to a charged particle beam - Google Patents

Abstract

A method and system are disclosed for observing and aligning a beam of light in the sample chamber of a charged particle beam (CPB) system, such as an electron microscope or focused ion beam system. The method comprises providing an imaging aid inside the sample chamber with a calibration surface configured such that when illuminated by light, and simultaneously illuminated by a CPB, the intensity of the secondary radiation induced by the CPB is different in regions also illuminated by light relative to regions with lower light illumination levels, thereby providing an image of the light beam on the calibration surface. The image of the light beam may be used to align the light beam to the charged particle beam.

Description

Method for aligning light beam with charged particle beam

The present invention relates to a charged particle beam system, and more specifically to a system and method for aligning a light beam with a charged particle beam in a charged particle beam system.

Charged particle beam systems are used in a variety of applications, including the manufacture, repair, and inspection of small devices such as integrated circuits, magnetic recording heads, and photolithography masks. Examples of charged particle beam systems include focused ion beam (FIB) systems that generate focused ion beams, electron microscopes that generate electron beams (SEM, STEM, and TEM), and subsystems that include subsystems for generating both focused ion beams and electron beams Double beam system.

Charged particle beam systems are commonly used in machining applications, where it is desirable to remove material from a workpiece with microscale and/or nanometer accuracy. In the case of a FIB system, material removal can be performed by a mechanism called sputtering, in which high-energy ions of the ion beam bombard the workpiece and cause the particles to be locally ejected from the position on the surface of the workpiece impacted by the beam.

In some cases, it is desirable to additionally expose a workpiece (also referred to as a "sample" or "sample") to a beam of light inside the sample chamber of the charged particle beam system. For example, in some machining applications, laser ablation is used to remove material from the workpiece at a rate higher than can be achieved using a focused ion beam. As another example, some applications use a focused or collimated beam alone or in combination with a charged particle beam to trigger or modify the surface chemistry of the workpiece (such as in curing, etching, and deposition operations). US Patent Publication No. 2014/0131195, which is assigned to the applicant and hereby incorporated by reference for all purposes, shows an example of a system including a laser and a charged particle beam system.

In many applications, it is desirable to expose the workpiece under vacuum conditions. Therefore, the sample chamber of the charged particle beam system is usually also a vacuum chamber equipped with a pump for evacuating the chamber. However, when it is also desired to illuminate the sample with a light beam inside the sample chamber, the vacuum chamber presents a problem to the operator because the vacuum chamber obstructs the operator's field of view (FoV) of the light beam inside the chamber, which makes It is difficult to align the beam with the position on the sample selected for processing and/or analysis. Because the operator cannot observe the position of the beam inside the sample chamber, it is difficult to accurately align the beam spot with the sample position and accurately set the working distance of the focusing optics of the beam implementation.

Therefore, it would be advantageous to find a method for accurately aligning a beam with a preselected analysis/processing position in the same sample in the vacuum chamber of a charged particle beam system. It is more advantageous to provide systems and equipment capable of performing these methods.

An object of the present invention is to provide a method and apparatus for using a charged particle beam to observe the position of a light beam incident on a workpiece, the observation can be used to apply the beam to the charged particle beam or a feature on the workpiece部Aligned.

In some embodiments, a method and system for observing and aligning a light beam in a sample chamber of a charged particle beam (CPB) system (such as an electron microscope or focused ion beam system) are disclosed. The method includes providing an imaging aid inside the sample chamber, wherein a calibration surface is configured such that when illuminated by light and simultaneously illuminated by a CPB, the intensity of secondary radiation induced by the CPB is also illuminated by light The area in the area is increased relative to the area with a lower light illumination level, thereby providing an image of the light beam (generated using the CPB) on the calibration surface. The CPB image of the beam can be used to align the beam, for example, to a position on the CPB or the sample. Generally, aligning the beam with the CPB includes: centering the beam on the center of a scanning grating formed by the X-Y deflection of the CPB to form an image, as is common in scanning electron microscopes. In this case, the center of the CPB scanning grating may roughly correspond to the optical axis of the CPB column.

In some embodiments, a CPB system includes a sample chamber having an imaging assistance device having a calibration surface disposed inside a sample chamber. A first subsystem is configured to generate a light beam and illuminate the calibration surface with the light beam. A second subsystem is configured to generate a charged particle beam and irradiate the calibration surface with the charged particle beam. A detector is configured to measure the intensity of secondary radiation emitted from the calibration surface and output an electronic signal that conveys the value of the intensity that changes with time. An arithmetic device is configured to determine one or more characteristics of the light beam by analyzing the electronic signal. The calibration surface is configured such that an area of the calibration surface is exposed to the beam and the CPB simultaneously causing the area to emit the secondary radiation from the area at a first intensity, and the area is exposed to the CPB without exposing Exposure of the area to the light beam causes the area to emit the secondary radiation at a second intensity different from the first intensity. For some embodiments, the first intensity is higher than the second intensity. For other embodiments, the first intensity may be lower than the second intensity. In both scenarios, the difference between the first intensity and the second intensity enables the position of the light beam within the CPB scanning grating (which determines the size and position of the CPB image).

In some embodiments, a non-transitory machine-readable storage medium includes executable instructions for operating a CPB system, where the instructions, when executed, cause one or more processors to: be configured to generate and A subsystem that directs a light beam irradiates the position with a light beam during the interval; guides a CPB device by simultaneously using a CPB on a calibration surface of an imaging aid placed in the same chamber within a time interval Irradiating the calibration surface at a location to induce the emission of secondary radiation from that location; directing a detector to measure the intensity of the secondary radiation during the interval and producing the intensity that represents a change in time within the interval A signal of the value; and guide analysis of the signal to determine a value of a property that characterizes an alignment state of the first beam during the interval.

The foregoing has fairly broadly summarized the features and technical advantages of the present invention so that the [embodiments] of the invention in the following text can be better understood. Additional features and advantages of the present invention will be described below. Those skilled in the art should understand that the disclosed concepts and specific embodiments can be easily used as a basis for modifying or designing other structures to carry out the same purpose of the present invention. Those skilled in the art should also realize that these equivalent structures do not deviate from the scope of the present invention as set forth in the patent application scope of the accompanying invention.

definition

In the following drawings and descriptions, similar parts are usually marked with the same element symbols throughout the specification and drawings. In addition, similar element symbols may refer to similar components in different embodiments disclosed herein. Figures are not necessarily to scale. Certain features of the invention may be shown enlarged or in a somewhat schematic form, and some details of conventional elements may not be shown for clarity and conciseness. The present invention is apt to have different forms of embodiments. Particular embodiments are described in detail and shown in the drawings in the understanding that this disclosure is not intended to limit the invention to the embodiments illustrated and described herein. It should be fully recognized that the different teachings of the embodiments discussed herein may be employed individually or in any suitable combination to produce the desired results.

In the following discussion and the scope of patent applications for inventions, the terms "including" and "including" are used in an open manner and are therefore interpreted to mean "including, but not limited to...". In the sense that no term is specifically defined in this specification, it is intended to give the term its simple and general meaning. In addition, the use of the term "and/or" in this document should be interpreted as an "inclusive" or not an "exclusive" or. For example, the phrase "A and/or B" used in this article will mean "A, B, or A and B." As another example, the phrase "A, B, and/or C" used herein will mean "A, B, C, or any combination thereof." In addition, whenever the terms "automatic", "automated" or similar terms are used herein, these terms will be understood to include manual initiation of automated or automated processes or steps.

The term "beam subsystem" is used herein to refer to an implementation of any device and/or component capable of illuminating an object placed inside a sample chamber of a CPB system. The beam can be focused, unfocused, and/or collimated. The beam source may be, for example, a laser, an LED, or a UV lamp. The term "source" is used herein to refer to a source of charged particles and/or a source of focused or collimated light. The terms "multi-beam system", "CPB system", "charged particle beam system" (in the case where a beam subsystem is indicated) and "combined laser and charged particle beam system" or "combined laser and CPB" "System" is used interchangeably to refer to at least one type of CPB (eg, a focused ion beam and/or an electron beam) configured to combine at least one type of beam (eg, a collimated or focused laser beam) ) Provided to a system inside one of the chambers.

The term "sample" refers to an object that is irradiated and/or illuminated by a combined light and CPB system. In the case where "a target", "a sample", "a substrate" or "a workpiece" is described as being placed inside a combined light and CPB system, the target, sample, substrate or workpiece is the combined light and CPB A sample in the system.

For some applications, it is desirable to direct both a CPB and a light beam to approximately the same position on the same sheet. In some systems, multiple CPBs (such as an electron beam and an ion beam) can all be directed toward the same sample and also to approximately the same location on the sample. These systems include multi-beam systems and analytical tools for manufacturing nanostructures, such as Raman spectroscopy instruments. In the embodiment, an imaging aid (IA) is used as a member for aligning the CPB and the laser beam. The position, shape, and size of the intersection of the laser beam and IA are detectable in the charged particle system, thereby being able to image this intersection.

As used herein, a "alignment property" can help to adjust any alignment of the beam inside the sample chamber to a desired state of the portion of the beam inside the sample chamber. Examples of suitable alignment properties include, but are not limited to, intensity, orientation, focus, shape (eg, cross-sectional profile, axial profile, etc.), size (eg, diameter, length, etc.), spot size, spot profile, and/or Light spot location. In addition, the expressions "determination of one-alignment property" and "determination of one-value of one-alignment property" may refer to: image data generated by a computer to perform a numerical calculation while observing the irradiation area from one of the IA When a human operator performs a mathematical or qualitative assessment of a mental step; or a combination of these.

As used herein, the "shape" of a beam at a surface includes the focal state of the beam at the surface and its diffraction pattern. Flow chart of an embodiment

FIG. 1 is a flow chart of a method 100 for aligning and focusing a light beam at a sample position inside a vacuum chamber of a CPB system according to an embodiment of the present invention. The light beam usually enters the vacuum chamber through a tube (which is part of the laser optics). In some embodiments, the alignment includes: changing the direction of the laser beam through the tube and into the vacuum chamber parallel to the tube, and simultaneously setting the position of the tube so that the laser beam is focused at the eucentric height And coincide with the electron beam and / or ion beam. Keeping the beam in the center of the tube and parallel to the tube axis ensures that the beam passes through the center of the optics, which minimizes aberrations. The concentric height is determined independently of the light position, and involves the working distance and the center of rotation of the stage. The alignment is usually relative to this position.

Method 100 may begin at block 110 or block 120. At block 110, one of the IAs including an ultra-nanocrystalline diamond (UNCD) sample is directly attached to the sample holder, but the sample of interest has not been loaded onto the sample holder. Alternatively, in block 120, the UNCD sample is placed on the side of a sample of interest or deposited onto a zone of the sample adjacent to the zone of interest so that both the UNCD sample and the sample of interest are loaded on the sample holder at the same time on.

In block 130, the sample stage (eg, sample stage 210 (see FIGS. 2 and 3)) is moved vertically to set a feature on the UNCD to a concentric height.

Next, at block 140, an SEM is used to image the UNCD sample simultaneously with the laser beam directed onto the UNCD sample. The electron beam of the SEM illuminates the UNCD sample with a focused primary electron beam. Due to the impact of the primary electron beam, secondary emissions (such as secondary electrons (SE) and/or backscattered electrons (BSE)) are emitted and collected by one or more detectors, while the primary beam (e.g. ) Scan across the sample with a raster pattern. Due to the interaction between the laser light illuminating the UNCD sample and the electron beam scanned across the UNCD sample, an image of the laser beam spot at the UNCD sample is obtained (for example, see FIG. 4).

At block 150, the laser optics (eg, laser optics 212 (see FIG. 2)) are adjusted by adjusting the focus along the axis of the beam relative to the UNCD sample to produce an optimal focus. This program uses real-time images of the laser spot to adjust the laser optics to produce the smallest (and brightest) central spot on the UNCD sample (eg, central spot 402 (see Figure 4)), which can be the best focus. It should be noted that in block 150, the UNCD samples (and the samples of interest) may not yet be at a concentric height.

In block 155, the laser optics are adjusted to position the laser focal point at the center of the scanning field of the SEM. Align the laser on the X-Y plane of the UNCD sample to ensure that the laser is aimed at the CPB. It should be noted that because the UNCD sample is inclined or has a surface at an angle not perpendicular to the CPB (see, for example, sample 208 in FIG. 2), the XY plane of the sample (which is approximately perpendicular to the axis of the beam) is also relative to the sample stage The XY plane (which is horizontal) is inclined. This alignment procedure ensures that the laser beam passes through the laser optics on and parallel to the axis of the laser optics, and is focused at the sample at a concentric height and coincides with the CPB(s).

Alignment continues in block 160, where the UNCD samples (and the sample of interest if method 100 starts with block 120) are moved vertically to a concentric height by the stage, and the laser is therefore adjusted by the laser optics Focus to position the laser focus at the concentric height.

After exiting block 160, block 170 or block 180 is now entered. If method 100 begins at block 110, then block 160 proceeds to block 180, where initially only UNCD samples are loaded onto the sample holder (ie, no samples of interest). Therefore, in block 180, the UNCD sample is removed, and then the sample of interest is loaded into the sample holder. If the method 100 starts at block 120, then block 160 enters block 170, and both the UNCD sample and the sample of interest are initially loaded onto the sample holder. Therefore, in this case, it is only necessary to use the sample stage 210 to move the sample of interest (containing the ROI of interest) into the FoV of the SEM.

Next, in block 185, the sample stage 210 is moved vertically to position the sample of interest (with ROI) to a concentric height.

Method 100 is completed at block 190, where the laser beam is aligned at the concentric height and focused on the sample of interest, and is from the respective CPB columns (such as columns 204 and 304 (see, eg, FIG. 2 or FIG. 3)) The electron beam and/or ion beam coincide. Although the method 100 describes aligning the laser and the electron beam at a concentric position, the method 100 is not limited to aligning at a concentric position and concentric height, nor is the method limited to a focused laser.

In some embodiments, adjusting the position of the beam may involve moving the center of one of the first beam spots in the x, y, and/or z directions less than or equal to 100 nm, less than or equal to 1 μm, and less than or equal to 10 μm , Less than or equal to 100 μm, less than or equal to 1 mm. System diagram of an embodiment

FIG. 2 shows a combined light and CPB system 200 according to an embodiment of the invention. The method 100 may be implemented on the system 200 to, for example, use an IA to align a light beam with one or more CPBs. Although light can generally travel through both air and vacuum, charged particles cannot travel through air due to scattering, so a vacuum chamber 202 is configured to contain sample 208 and CPB column 204 (which produces CPB 206) And laser optics 212. The vacuum chamber 202 is generally configured with a rough pump (not shown) to remove most of the air in the chamber 202, and then a high vacuum pump (not shown) (such as a turbo molecular pump) to remove almost all the remaining air to At least one high vacuum inside the chamber 202 is generated. An IA (such as a UNCD) and a sample of interest are installed on the sample stage 210. The sample stage 210 can move along various linear axes and/or around different rotation axes to facilitate positioning of the sample 208 (IA and/or sample of interest) under both the CPB 206 and the beam 240.

The laser optics 212 generally extends through the wall of the vacuum chamber 202 using a flexible airtight bellows or equivalent. The precise positioning on multiple linear and angular axes is achieved by the mounting structure including X-Y motion stage 214 and Z motion stage 216. Various configurations of the installation structure fall within the scope of the present invention. The Z axis of the Z motion stage 216 is oriented along the axis of the laser optics 212, so movement along the Z axis enables focusing the laser beam onto the surface of the sample 208 (which can be tilted as shown). Movement along the X-Y axis of the moving stage 214 enables positioning of the laser beam relative to the CPB column scanning raster (e.g., as defined by the CPB 206 axis). The tilt of the laser optics is determined by the configuration of the flange on the vacuum chamber 202. In some embodiments, a tilting stage (combined with X-Y-Z motion stage) can be used.

The laser 232 produces a laser beam 218 that partially travels through one of the dichromatic mirrors 224. Although the treatment disclosed herein has been shown to work at wavelengths between about 500 nm and about 800 nm, visible and/or UV wavelengths below 500 nm may work. In one embodiment, a laser beam with a wavelength of 532 nm is used. In FIG. 2, the light reflected off the mirror 224 is directed downward (not shown). The relay lens 222 reflects the laser light to the scanning mirror 220 mounted on the actuator 223, which can change the position and direction of the laser beam entering the laser optics 212, thereby changing the laser beam in the UNCD sample And the location of the sample of interest. The light from the sample 208 travels back through the laser optics 212, reflects off the scanning mirror 220, and then reflects off the relay mirror 222. A portion of this light is also reflected off the dichromatic mirror 224 and upwards through the lens 226, which focuses the light 238 into the entrance to the optical fiber 228 of the spectrometer 230. The spectrometer 230 can separate the incoming light from the optical fiber 228 into component frequencies (wavelengths) to perform various types of spectroscopy. Aligning the laser beam 240 on the sample 208 requires iterative alignment of one of the mirrors 222, 220 and the laser optics 212 (using motion stages 214 and 216). For example, a system for positioning a laser beam in a CPB vacuum chamber is shown in Straw et al., US Patent No. 8,766,213 "Automated Method for Coincident Alignment of a Laser Beam and a Charged Particle Beam" It is hereby incorporated by reference for all purposes. Although the laser and associated optics are shown outside the vacuum chamber 202, in some embodiments, the laser can be positioned within the vacuum chamber 202, and any physical location of the laser relative to the vacuum chamber can be present It is within the scope of the invention and is contemplated herein.

The detector 207 may detect secondary electrons (SE), backscattered electrons (BSE), or both SE and BSE that may be emitted by the sample 208. The detection of SE and/or BSE allows imaging of a sample 208 (such as a surface of the sample) and can be generated in response to the CPB 206.

One or more processors 250 are connected to various components of the system 200 or 300, such as the column 204, the detector 207, the laser 232, the actuator 223, the spectrometer 230, and the motorized stage. A non-transitory machine-readable storage medium 252 may include executable instructions for the CPB system 200. When executed, these executable instructions cause one or more processors 250 to control various aspects of system operation, such as the generation of CPB 206, the operation of laser 232, the tilt of scanning mirror 220, and the control of spectrometer 230. In various embodiments, the non-transitory machine-readable storage medium 252 includes executable instructions for performing one or more of the methods disclosed herein, such as methods 100, 500, and/or 1200. In these embodiments, the executable instructions, when executed by one or more processors 250, coordinate and direct the components of the system 200 to perform the steps of the method. System diagram of an embodiment

FIG. 3 shows an exemplary system 300 which is a combination of an optical system and a charged particle beam system. System 300 is similar to system 200 (FIG. 2), but it has an additional charged particle optical column 304 that produces a second CPB 306. The same elements in FIG. 3 as those in FIG. 2 are referred to by the same element symbols. Generally, if the CPB 206 is an electron beam, the CPB 306 will be an ion beam 306. A system with two columns that produces two different charged particle beams is commonly referred to as a "dual beam system."

The alignment method disclosed herein may be used to align CPB 206 and laser beam 240 and/or CPB 306 and laser beam 240. Generally, in a dual beam system, the alignment between two CPBs can be accomplished by performing a FIB milling operation followed by imaging the results of the milling operation with SEM. However, it is also possible to align the beams 206 and 240 and then the beams 306 and 240 so that the beams 206 and 306 are now also aligned with each other. This indirect alignment method may be useful for samples where FIB milling is not feasible or desirable.

SEM image of an embodiment

FIG. 4 shows an SEM image 400 of an IA including an UNCD illuminated by a laser beam and CPB simultaneously according to an embodiment disclosed herein. The contrast mechanism that produces the optical center region 402 and the optical first ring 406 and other concentric rings around the ring 406 enhances the SE emission induced by the laser beam photons reaching the same surface of the UNCD that the CPB 206 reaches. In this context, "contrast" is the ratio of the signal from the area illuminated by photons to the signal from the surrounding area not illuminated by photons. Although not wishing to be bound by theory, it is believed that the laser enhancement effect of the SE emission is due to laser illumination that locally modifies the charged characteristics of UNCD. Other materials that also exhibit this SE emission enhancement effect include alumina and anodized aluminum, magnesium oxide, nickel oxide, copper oxide, or where IA includes a layer of a first material that provides a calibration surface. The calibration surface represents the "active layer" of IA. The layer "functions" in the sense that it enhances secondary emission when it is impacted by a charged particle beam in the presence of a light beam. An active layer may include, for example, UNCD, a semiconductor in which a laser diode is fabricated, or other materials that enhance secondary emission in the presence of illuminating light. The SE emission enhancement in these materials lasts for several seconds. The UNCD material is clearly unique because it has a much shorter enhancement time (which is better) to reduce or eliminate the "lag" in SEM images using SE emission and detection. Longer lag time can cause the image to be "blurred" when changing any parameters (such as laser position, laser focus, sample height or position, etc.), making operation as an alignment aid slower. UNCD materials also exhibit SE emission enhancement effects that are much greater than one of the other materials. One of the additional advantages of using UNCD materials is that the enhancement of SE emission obviously depends on the intensity of the laser beam, which can be seen in Figure 4 (which is a grayscale image), where the central light spot 402 is brighter than the ring 406, from the iResearch (Airy disk) theory knows that the ring 406 has a lower light intensity. Figure 4 is generated using 532 nm laser light, which is limited by a small circular hole to produce the iResearch disk shown. The lines in the image are due to scratches on the surface of the UNCD sample. Both an SEM and a focused ion beam were used to experimentally observe the SE emission enhancement effect. The UNCD sample is usually a small film that can be loaded onto the sample holder without the sample of interest (for example, as in block 110) or next to the sample of interest on the sample holder (for example, as (Block 120). Flow chart of an embodiment

5 is a flowchart of a method 500 for aligning and focusing a light beam at a concentric sample position inside a vacuum chamber of a CPB system according to an embodiment of the present invention. The method 500 may be implemented by the system 200 and/or 300, for example.

Method 500 may begin at block 510 or block 520. In block 510, a laser diode (LD) is directly attached to the sample holder, and the sample of interest has not been loaded into the sample holder. Alternatively, in block 520, the LD is placed on the side of a sample of interest, so that both the LD and the sample of interest are loaded on the sample holder at the same time.

In block 530, a sample stage (such as sample stage 610 (see FIG. 6)) is moved vertically to set the LD to a concentric height.

At block 540, the LD is imaged using the SEM simultaneously with the laser beam directed onto the LD. The SEM illuminates the LD with a focused primary electron beam. Due to the impact of the primary electron beam, cathode luminescence and/or photoluminescence can be induced in the LD, which causes emission of light detected as described in FIG. 6. Due to the interaction between the laser light illuminating the LD and the electron beam scanned across the LD, an image of the laser beam spot on the LD is obtained (see Figure 7). 9 to 11 show graphs illustrating the cause of imaging contrast.

Next, in block 550, the laser optics are adjusted by vertically adjusting the focus height relative to the LD to produce an optimal focus. This procedure uses the real-time image of the laser spot as shown in FIG. 7 to adjust the laser optics to produce the smallest (and brightest) center spot 702. It should be noted that in block 550, the LD (and the sample of interest) may not yet be at a concentric height.

At block 555, the laser optics are adjusted to position the laser focal point at the center of the SEM scanning field. Align the laser on the horizontal X-Y plane of the sample to ensure that the laser is aligned with the CPB. This alignment procedure ensures that the laser beam passes through the laser optics on and parallel to the axis of the laser optics, and is focused on the sample at a concentric height to coincide with the CPB.

In block 560, the alignment on XY is continued, where the LD (and the sample of interest if the method 500 starts with block 520) is moved vertically to a concentric height, and the laser focus is adjusted by the laser optics to Position the laser focus at the concentric height.

After exiting block 560, block 570 or block 580 is now entered. If the method 500 begins at block 510, then block 560 proceeds to block 580, where only the LD is initially loaded onto the sample holder (ie, no sample of interest). Therefore, in block 580, the LD is removed, and then the sample of interest is loaded into the sample holder. If the method 500 starts at block 520, then block 560 proceeds to block 570, and both the LD and the sample of interest are initially loaded into the sample holder. Therefore, in this case, it is only necessary to use the sample stage 610 to move the sample of interest (containing the ROI of interest) into the FoV of the SEM.

Block 585 is now entered, where the sample stage 610 is moved vertically to position the sample of interest (with ROI) to a concentric height.

Method 500 is completed at block 590, where the laser beam is aligned at the concentric height and focused on the sample of interest, and coincides with the electron beam and/or ion beam 606 from the CPB column 604. System diagram of an embodiment

6 shows a simplified schematic diagram of a combined light and CPB system 600 according to an embodiment of the invention. Although light can generally travel through both air and vacuum, charged particles cannot travel through air due to scattering, so a vacuum chamber 602 is configured to contain sample 608 and charged particle column 604 (which produces CPB 606 )和LASER OPTICAL 607. The same pumping considerations as the chamber 202 in FIG. 2 apply. The LD sample (see FIG. 7) and the sample of interest are mounted on a sample stage 610. The sample stage 610 can move along various linear axes and/or around different rotation axes to facilitate positioning of the sample 608 at the CPB 606 and laser Beam 634 both below. The detector 609 can detect SE, BSE, or both.

Laser optics 607 is shown extending inwardly from the wall of the chamber 602, where a viewport will be positioned to allow the laser beam 634 from the laser 630 to travel inward, and the light 618 from the LD or the sample of interest to Traveling outside. Light 618 travels through dichroic mirror 624 and is collected by detector 632, while light 634 from laser 630 is partially reflected off dichroic mirror 624 to travel toward the left side of FIG. 6 and into chamber 602, as shown. Laser optics 607 includes a parabolic focusing lens positioned between column 604 and sample 608, and a small hole (not shown) is positioned in optics 607 to allow CPB 606 to travel from column 604 to sample 608. The focal point of the parabolic mirror is roughly at the intersection of the CPB 606 and the surface of the sample 608. The laser beam 634 enters the chamber 602 from the right (after reflection off the mirror 624) and is focused onto the surface of the sample 608 by a parabolic mirror. The light emitted from the surface and incident on the parabolic mirror is reflected as a parallel beam 618 and travels out of the chamber 602. The beam 618 is partially transmitted through the mirror 624 and detected by the detector 632.

One or more processors 650 are connected to various components of system 600, such as column 604, laser 630, spectrometer 632, and motorized carrier. A non-transitory machine-readable storage medium 652 may include executable instructions for the CPB system. When executed, these executable instructions cause one or more processors 650 to control various aspects of system operation, such as the generation of beam 606, the operation of laser 630, and the operation of spectrometer 632. Optical image from laser diode

FIG. 7 shows an optical image 700 formed by cathodoluminescence emitted from an LD sample illuminated with an electron beam while simultaneously illuminated with a laser beam according to an embodiment of the present invention. The mechanism for generating the image 700 is as follows. The power of the incident laser beam 618 is, for example, tuned to excite an LD just below the laser threshold, and the ultra-linear output scaling (see FIGS. 9 to 11) allows small additional power input from the electron beam 606 to be received The area excited by the combined electron beam and laser beam (which corresponds to the position of the laser beam) produces a brighter optical emission signal. Therefore, the photodetector 632 can be used to generate an image of a laser light spot, and allows the user to adjust its iso-optical alignment so that the excitation area is roughly centered in the FoV of the SEM. Region 704 is outside the region of laser beam 618 and is therefore dark due to the absence of super-linear output scaling. Interaction of electron beam and laser beam

FIG. 8 shows a plot 800 of an electron beam 803 with an excitation volume 804 and a laser beam 801 with an excitation volume 802 (both of which are illuminated on a quantum well laser). A quantum well laser is one in which the active area of the device is too narrow (which is formed by a thin layer of different materials as a stack) so that one of the quantum confinement LDs occurs. A compound semiconductor material (eg, GaAs, AlGaAs, InGaAs, etc.) capable of efficiently emitting light (other than silicon) can be used to form an LD. The wavelength of light emitted by a quantum well LD is determined by the width (thickness) of the active region rather than the band gap of the material that constructs it. Therefore, using a specific semiconductor material, a wavelength much longer than the conventional LD can be obtained from the quantum well LD. The efficiency of a quantum well LD is also greater than that of a conventional LD due to the step form of its state density function.

Layer 806 protects one of the surface layers of the three layers 808 to 812 of one quantum well 816 shown. The layers 808 and 812 may include GaAs, and the center layer 810 may include AlGaAs. Other structures including thin layers of quantum wells also fall within the scope of the present invention, including but not limited to InGaAs thin layer 810 (quantum well) embedded between GaAs layers 808 and 812. Other quantum wells may include a thin layer 810 of GaAs embedded between layers 808 and 812 of AlGaAs. Layers 806 to 812 are deposited on and supported by substrate 814. It should be noted that the electron beam excitation volume 804 is generally much larger than the diameter of the incident electron beam 803. However, the size of the laser excitation volume 802 is generally much larger than the electron beam excitation volume 804. Generally speaking, the resolution in the image 700 will be dominated by the diameter of the electron beam interaction volume 804, rather than the diameter of the laser interaction volume 802. Super linear output scaling

9 to 11 show three graphs illustrating a method for super-linear output scaling imaging such as the embodiment of FIG. 6. The power of the incident laser beam 618 is tuned to excite LDs just below the laser threshold, and the ultra-linear output scaled to allow small additional power input from the electron beam 606 to enter the area excited by the receiving combined electron-laser beam (It corresponds to the position of the laser beam) produces a bright optical emission signal. Therefore, the photodetector 632 can be used to generate an image of a laser spot, and allows the user to adjust its optical alignment to accurately localize the excitation area in the FoV of the SEM. Region 704 is outside the region of laser beam 618, and is therefore darker due to the absence of super-linear output scaling.

9 is a graph 900 of integrated laser diode intensity (in counts/second) plotted against laser power 904 when the sample is only illuminated by a laser beam 902 according to an embodiment such as FIG. 6 900 . In this example, the LD is illuminated with laser power plotted along the horizontal axis 904 with a 442 nm laser light. It should be noted that up to about 400 μW, there is no observable light emission from the LD. At a laser threshold power of about 700 μW (see Figures 10 and 11), the light emission increases rapidly, which corresponds to the beginning of the LD laser. Line 908 represents the integrated laser intensity of one of the 700 μW laser input power-point 910 is the intersection of line 906 (700 μW) and line 908.

FIG. 10 is a plot of the integrated laser diode intensity (in counts/second) 1002 plotted against the beam current 1004 when the sample is illuminated by only a 5 keV electron beam according to an embodiment such as FIG. 6. Chart 1000. Up to 25 nA electron beam current (line 1006), substantially no light emission from the LD was observed. Line 1008 crosses the axis 1002 at the light intensity observed for the 25 nA electron beam current-the intersection of the line 1006 and the line 1008 (25 nA beam current), which means that when the LD consists of only 5 nV electrons from 25 nA (125 μW total beam power, which is not completely absorbed in the LD, as can be seen from FIG. 8, where some parts of the electron excitation volume extend outside the three LD layers 808 to 812) Light intensity when illuminated.

11 is an integrated laser diode plotted for electron beam current 1104 when the sample is illuminated by both a 442 nm laser beam (700 μW) and a 5 keV electron beam according to an embodiment such as FIG. 6 A graph 1100 of body strength (in counts/second) 1102. It should be noted that the value on the integration intensity axis 1102 is 10 times higher than either of chart 900 or 1000. Therefore, the dual excitation of both 442 nm laser light and 5 keV electrons exhibits super linear output scaling. It should be noted that the absolute value shown for counts/sec in FIG. 11 varies depending on the collection efficiency of the specific setting device of the optical component using the device for collecting light. Flow chart of the embodiment

12 is a flowchart of a method 1200 for aligning and focusing a light beam at a concentric sample position inside a vacuum chamber of a CPB system according to an embodiment of the present invention.

Method 1200 may begin at block 1210 or block 1220. At block 1210, an IA is directly attached to the sample holder, and the sample of interest has not been loaded into the sample holder. Examples of IA include, but are not limited to: a UNCD, an LD, or a material that can hold a charge for a short period of time (such as a few seconds), including but not limited to alumina or anodized aluminum, magnesium oxide, nickel oxide, and copper oxide. Alternatively, in block 1220, IA may be deposited on the sample at one side of the area of interest. For both blocks 1210 and 1220, the sample holder can be installed on the same stage.

At block 1230, the sample carrier is moved vertically to position the IA at a concentric height.

Next, at block 1240, the IA is imaged using the SEM simultaneously with the laser beam directed onto the IA. The SEM illuminates the IA with a focused primary electron beam. Attributable to the impact of the primary electron beam, due to cathodoluminescence or photoluminescence secondary particles (such as secondary electrons, backscattered electrons or photons) emitted and collected by a detector, and the primary beam is a grating Patterns are scanned across samples. Due to the interaction between the laser light illuminating the IA and the electron beam scanned across the IA, an image of the laser beam spot at the IA (for example, such as 400 or 700) can be obtained.

At block 1250, the laser optics are adjusted by adjusting the focus vertically with respect to IA to produce an optimal focus. Align the laser on the X-Y plane of the sample to ensure that the laser is aligned with the CPB. This X-Y alignment procedure ensures that the laser beam passes through the laser optics on and parallel to the axis of the laser optics, and is focused on the sample at a concentric height to coincide with the CPB(s). As discussed with respect to FIG. 2, the tilting of the laser beam can be controlled by the construction of the mounting flange of the laser optics and/or using an additional tilting stage.

At block 1255, the laser optics are adjusted to position the laser focal point at the center of the scanning field of the SEM. Align the laser on the IA plane to ensure that the laser is aimed at the CPB.

Alignment continues at block 1260, where the IA (and the sample of interest if method 1200 starts at block 1220) is moved vertically to a concentric height, and therefore the laser focus is adjusted by the laser optics to bring the laser focus Set at the concentric height. The alignment procedures in blocks 1255 and 1260 ensure that the laser beam passes through the laser optics on and parallel to the axis of the laser optics, and is focused at the sample at a concentric height to coincide with the CPB(s).

After exiting block 1260, it now enters block 1270 or block 1280. If the method 1200 begins at block 1210, then block 1260 proceeds to block 1280, where initially only the IA is loaded onto the sample holder (ie, no sample of interest). Therefore, in block 1280, the IA is removed, and then the sample of interest is loaded into the sample holder. If method 1200 starts at block 1220, then block 1260 enters block 1270, and both the IA and the sample of interest are initially loaded into the sample holder. Therefore, in this case, it is only necessary to use the sample stage 210 to move the region of interest into the FoV of the SEM.

Next, in block 1285, the sample stage is moved vertically to position the sample of interest (with ROI) to a concentric height.

Method 1200 is completed at block 1290, where the laser beam is aligned at the concentric height and focused on the sample of interest, and coincides with the electron beam and/or ion beam from the charged particle column. Although the method 1200 describes aligning the laser and the electron beam at a concentric position, the method 1200 is not limited to aligning at a concentric position and concentric height, nor is the method limited to a focused laser.

Methods 100, 500, and 1200 may be performed using embodiments such as 200, 300, and 600. Other embodiments for performing methods 100, 500, and 1200 also fall within the scope of the present invention.

The above embodiment describes the use of a CPB to make the beam incident area on the workpiece visible. Although the beam can be made visible to align the beam with the CPB, the beam can also be made visible for other purposes, such as aligning the beam with a feature on the surface of the workpiece. For example, the light beam can be used for charge control, sample processing, or photoyield spectroscopy. A suitable light source (which can be, for example, a laser, an LED, or a UV lamp) will vary with the application. Although the above embodiment describes adjusting the incident area of the light beam to coincide with the incident area of the charged particle beam, one can adjust the position of the incident area of the charged particle beam to coincide with the light beam. The following are additional examples according to the present invention.

FIG. 13 is a flowchart of a method 1300 for determining a property of a light beam at a calibration surface. In step 1302, a region of a calibration surface is illuminated with a light beam. The beam may be, for example, a laser beam, a visible beam, an ultraviolet beam, or other types of beams from, for example, a laser source, an LED, or a UV lamp. In step 1304, a charged particle beam is scanned onto an area of the calibration surface illuminated by the beam. Preferably, the beam is scanned over a region that includes part or all of the region illuminated by the light beam and also includes an area not illuminated by the light beam. The boundary between the illuminated area and the unilluminated area is visible on an image formed using secondary radiation. That is, in the image, one area (usually the illuminated area) will be brighter than the other area, and the line between the bright area and the darker area outlines the boundary of the illumination. The charged particle beam may be, for example, an electron beam or an ion beam.

In step 1306, the secondary radiation emitted from the zone in response to the incident of the charged particle beam is collected. The secondary radiation may be, for example, secondary electrons, backscattered electrons or photons. In step 1308, one of the differences in the secondary radiation between the area hit by the charged particle beam and illuminated by the beam and the area hit by the charged particle beam and not illuminated by the beam determines a property of the beam at the calibration surface. The property may be, for example, the position of the beam or the intensity of the beam. The calibration surface serves as an imaging aid that allows the area of the calibration surface illuminated by the beam area to be made visible by modifying the secondary radiation emitted in response to the incident charged particle beam. For example, if the calibration surface includes UNCD, alumina, anodized aluminum, magnesium oxide, nickel oxide, and copper oxide, the secondary electrons emitted from the area illuminated by the free beam and the area not illuminated by the beam in response to the incident of the charged particle beam The number will be different, thereby making the area illuminated by the area visible in a charged particle beam image. For another example, if the calibration surface includes a laser diode, the intensity of light emitted by the area illuminated by the free beam and the area not illuminated by the beam will be different in response to the charged particle beam, thereby making the illuminated area Visible in a charged particle beam image. If the intensity of the illumination light changes above the illuminated area, the secondary radiation emitted in response to the charged particle beam can vary with the intensity of the illumination beam, thereby providing a picture of the intensity of the illumination light.

By observing the difference in secondary radiation between different areas of the calibration surface, the position of the beam relative to the charged particle beam on the calibration surface can be determined. Determining the position of the beam relative to the charged particle beam allows the two beams to be aligned and focused. The beam is usually aligned at a concentric point. The difference in secondary radiation between different areas of the calibration surface can also be used to determine when the beam is focused, and the beam can be aligned and focused at a desired point.

A first embodiment is a method of observing a light beam in a sample chamber of a CPB system. The method includes: providing an IA inside the sample chamber, the IA having a calibration surface, the calibration surface being configured To illuminate any area on the calibration surface that is undergoing irradiation by a second charged particle beam with a first light beam to change one of the intensity of the secondary radiation emitted from the calibration surface caused by the second beam; When a beam irradiates an area of the calibration surface and induces the emission of secondary radiation from the area, the first beam is used to illuminate the area, where the secondary radiation can be light, secondary electrons, or backscattered electrons; a detector is used Measure the intensity of secondary radiation; generate an electronic signal that conveys the intensity value of secondary radiation that changes with time based on the measured value; determine a value of the alignment property of one of the first beams by analyzing the electronic signal.

A second embodiment, which is the method of the first embodiment, further includes: acquiring a secondary radiation image of the calibration surface by scanning across the calibration surface according to a pattern with the second beam, and wherein the second Illuminating the area with the first beam when the beam irradiates the area includes irradiating the area with the first beam while the second beam is scanning the area.

A third embodiment, which is the method of the second embodiment, wherein the secondary radiation image of the calibration surface includes an image where a beam spot of the first beam is superimposed on the area; and the value of the alignment property is determined Including: analysis of secondary radiation images and images of beam spots.

A fourth embodiment is the method of the third embodiment, wherein the analysis of the secondary radiation image and the beam spot image includes: using image recognition software to analyze the secondary radiation image and the beam spot image.

A fifth embodiment is the method of the third embodiment, wherein an image contrast is a ratio of a signal from an area illuminated by light to a signal from a surrounding area not illuminated by light.

A sixth embodiment is the method of the first embodiment, wherein the value of the alignment property is a first value of an alignment property of the beam when the first beam illuminates the area, the method further includes: Use the first value of the alignment property to calculate a first adjustment to the laser beam system that can change the value of the alignment property of the first beam to a second preselected value; perform the first adjustment; and copy the same Positioned within the sample chamber so that the sample location selected for subsequent analysis and/or processing by the CPB system is adjacent to the calibration surface.

A seventh embodiment, which is the method of the sixth embodiment, further includes positioning the calibration surface at a concentric height of the sample chamber, and wherein the first value of the alignment property includes illuminating the area with the first beam A position of one beam spot of the beam on the calibration surface; the second value of the alignment property is the position of the beam spot on the sample positioned at a concentric height and adjacent to the calibration surface; the preselected value Including the position of the sample position; and performing a first adjustment to move the first beam so that the beam spot is approximately at the center of the sample position.

An eighth embodiment is the method of the seventh embodiment, wherein illuminating the area of the calibration surface includes: traveling the first beam through a focusing optics that directs and focuses the first beam to the calibration On the surface, and the method further includes: determining a value of the working distance of the focusing optics during illumination of the area by analyzing the electronic signal; using the value of the working distance to calculate a second adjustment to the CPB system, the second adjustment This includes adjusting one of the working distances that will focus the first beam approximately at the concentric height; and performing a second adjustment.

A ninth embodiment, which is the method of the first embodiment, further includes providing the IA as a thin layer disposed on a surface of the sample adjacent to the selected for analysis and/or by the CPB system Process one of the samples of interest at a location.

A tenth embodiment is the method of the first embodiment, wherein the emission of secondary radiation includes the emission of secondary electrons and/or backscattered electrons.

An eleventh embodiment is the method of the first embodiment, wherein the first beam includes a laser beam, an LED, or a UV lamp.

A twelfth embodiment is the method of the eleventh embodiment, wherein one wavelength of the laser beam is in the range from UV to near IR.

A thirteenth embodiment is the method of the first embodiment, wherein the second beam includes a focused ion beam.

A fourteenth embodiment is the method of the first embodiment, wherein the emission of secondary radiation includes the emission of electromagnetic radiation having a wavelength longer than 10 nm.

A fifteenth embodiment, which is the method of the fourteenth embodiment, wherein the emission of secondary radiation includes the emission of visible light caused by the cathode luminescence of the zone.

A sixteenth embodiment, which is the method of the first embodiment, wherein the laser threshold power of one of the materials of IA at the calibration surface is greater than the power of one of the first beams during scanning the area with the second beam And one of the power of the second beam; and less than the sum of the power of the first beam and the power of the second beam.

A seventeenth embodiment is the method of the first embodiment, wherein the sample chamber is a vacuum chamber of a scanning electron microscope, and the second beam is an electron beam generated by the scanning electron microscope.

An eighteenth embodiment is the method of the seventeenth embodiment, wherein the scanning electron microscope is configured to perform Raman spectroscopy and the secondary radiation includes Raman emission of inelastic scattered light.

A nineteenth embodiment, which is a CPB system, includes: a sample chamber; an IA, which is disposed inside the sample chamber and has a calibration surface; a first subsystem, which is configured to produce a A first light beam and illuminate the calibration surface with the first light beam; a second subsystem configured to generate a second charged particle beam and irradiate the calibration surface with the second charged particle beam; a detector, which is assembled State to measure the intensity of secondary radiation emitted from the calibration surface and output an electronic signal conveying an intensity value that varies with time; an arithmetic device configured to determine one of the first beams by analyzing the electronic signal Or multiple characteristics; and wherein the calibration surface is configured such that exposing a region of the calibration surface to both the first beam and the second beam causes the region to emit secondary radiation from the region at a first intensity and expose the region The second beam without exposing the area to the first beam causes the area to emit secondary radiation at a second intensity different from the first intensity.

A twentieth embodiment, which is the CPB system of the nineteenth embodiment, wherein the second subsystem includes a focused ion beam column, an electron microscope, or a combination thereof; and the first subsystem includes a laser beam Equipment and a focusing optics, the laser beam equipment is configured to generate the first beam as a laser beam, and the focusing optics are configured to focus and guide the laser beam from a position inside the sample chamber to On the calibration surface.

A twenty-first embodiment, which is the CPB system of the twentieth embodiment, wherein the second subsystem includes a scanning electron microscope; the sample chamber includes a vacuum chamber, and a wall of the vacuum chamber is provided with a window port, The window includes a laser-transmitting material that provides a transmission path to transmit the laser beam through the wall; and the laser beam device is configured to generate the laser beam at a location outside the vacuum chamber and pass through the transmission The path guides the laser beam into the vacuum chamber.

A twenty-second embodiment, which is the CPB system of the nineteenth embodiment, wherein the second subsystem includes a scanning electron microscope, the detector includes a photon detector, and the IA includes a laser diode, The laser diode includes a quantum well.

A twenty-third embodiment is the CPB system of the nineteenth embodiment, wherein the secondary radiation includes secondary electrons, and the detector includes an Everhart-Thornley detector.

A twenty-fourth embodiment is the CPB system of the twenty-third embodiment, wherein one of the materials of the IA at the calibration surface includes UNCD.

A twenty-fifth embodiment, which is the CPB system of the twenty-third embodiment, wherein IA includes a layer of a first material, which is disposed on a substrate including a second material, and the calibration surface is the layer A surface.

A twenty-sixth embodiment, which is the CPB system of the twenty-fifth embodiment, wherein the first material includes an oxide, and one of the chemical compositions of the oxide includes at least one selected from the group consisting of aluminum, magnesium, nickel, and copper An element.

A twenty-seventh embodiment, which is a non-transitory machine-readable storage medium, which includes executable instructions for operating a CPB system, which, when executed, cause one or more processors to boot the group A subsystem to generate and direct a light beam to irradiate the position with a first light beam during the interval; direct a CPB device to be placed in the same chamber by a second charged particle beam at the same time in a time interval Irradiating the calibration surface at a location on the calibration surface of one of the IAs to induce secondary radiation from that location; guiding a detector to measure the intensity of the secondary radiation during the interval, and generating a representation that is within the interval A signal of intensity value that changes with time; and guides the analysis signal to determine a value that characterizes a property of an alignment state of the first beam during the interval.

A twenty-eighth embodiment, which is the non-transitory machine-readable storage medium of the twenty-seventh embodiment, wherein the alignment state is a first alignment state, and wherein the executable instruction causes an OR when executed Multiple processors: calculating an adjustment that will change the first beam from the first alignment state to a preselected second alignment state; and directing the subsystem configured to generate and guide a beam to perform the calculated adjustment.

A twenty-ninth embodiment, which is the non-transitory machine-readable storage medium of the twenty-eighth embodiment, wherein the property includes a position of a beam spot of one of the first beams on the calibration surface, and the adjustment is An adjustment of the beam spot is moved to an area of interest on a sample to be analyzed and/or processed by the first beam.

A thirtieth embodiment is a method of observing an incident area on the surface of a sample of a beam in an evacuation chamber using an IA, the IA has a calibration surface configured to use a CPB The illumination also causes a change in the intensity of the secondary radiation emitted when the CPB impinges on the calibration surface by a portion of the calibration surface illuminated by the beam. The method includes: illuminating an area of the calibration surface with the beam; scanning the CPB to be illuminated by the beam On the area of the calibration surface, the CPB has a spot size on the calibration surface that is smaller than the area illuminated by the light beam; detecting the emission of secondary radiation emitted from the area in response to the incident of the CPB while scanning the area; And one of the differences in secondary radiation between the area impacted by the CPB and illuminated by the beam and the area impacted by the CPB and not illuminated by the beam determines a property of the beam at the calibration surface.

A thirty-first embodiment, which is the method of the thirtieth embodiment, wherein determining a property of the beam at the calibration surface includes: determining the position of the beam at the calibration surface.

A thirty-second embodiment is the method of the thirty-first embodiment, wherein scanning with the CPB includes positioning the CPB at a point on the calibration surface using a CPB reference system, and wherein determining the position of the beam on the calibration surface Including: Determine the position of the beam in the CPB reference frame.

A thirty-third embodiment, which is the method of the thirty-first embodiment, further includes adjusting the position of the area illuminated by the light beam.

A thirty-fourth embodiment is the method of the thirtieth embodiment, wherein determining one property of the beam at the calibration surface includes determining the shape of the beam at the calibration surface.

A thirty-fifth embodiment, which is the method of the thirtieth embodiment, further includes removing IA from the beam path and placing a workpiece in the beam path; and using the beam and using CPB to process or image the workpiece.

Although the present invention and its advantages have been described in detail, it should be understood that various changes, substitutions, and alterations can be made to the embodiments described herein without departing from the scope of the invention as defined by the appended invention patent application. Furthermore, the scope of this application is not intended to be limited to the specific embodiments of the processes, machines, manufacturing, material composition, components, methods, and steps described in this specification. As one of ordinary skill will readily understand from the disclosure of the present invention, existing or later-developed processing, machines, and machines that perform substantially the same function or achieve substantially the same results as the corresponding embodiments described herein can be utilized according to the present invention Manufacturing, material composition, components, methods or steps. Therefore, the scope of the accompanying invention patent application is intended to include such processes, machines, manufacturing, material composition, components, methods, or steps within its scope.

Many variations and modifications of the invention disclosed herein are feasible, and alternative embodiments resulting from combining, integrating, and/or omitting features of the embodiments disclosed herein are also within the scope of the invention. Where a numerical range or limitation is explicitly stated, such expression range or limitation should be understood to include an iterative range or limitation that includes similar magnitudes that fall within the explicitly stated range or limitation (eg, from about 1 to about 10 includes 2 , 3, 4, etc.; greater than 0.10 includes 0.11, 0.12, 0.13, etc.). For example, whenever a range of values having a lower limit R1 and an upper limit Ru is revealed, any number falling within the range is explicitly disclosed. In particular, the following numbers within the range are clearly revealed: R=Rl+k*(Ru-Rl), where k is a variable with a 1% increment in the range from 1% to 100%, ie, k is 1%, 2%, 3%, 4%, 5%, 50%, 51%, 52%, 95%, 96%, 97%, 98%, 99% or 100%. In addition, any numerical range defined by the two R numbers as defined above is also clearly disclosed. The use of the term "as appropriate" with respect to any element in a technical solution is intended to mean that the main element is required or not required. The two alternatives are intended to be within the scope of patent applications for inventions. The use of the term "may" introduce features of embodiments of the invention (for example, "in one embodiment, a small part may be connected to an insert") is intended to mean that embodiments describing these features are within the scope of the invention And these embodiments should be interpreted as clearly stated in this specification. However, the use of the term "may" to introduce features of an embodiment does not indicate that embodiments that fail to describe such features are outside the scope of the present invention. In addition, although various features of the embodiments are described in the plural form (eg, attachment surfaces, local attraction sites, etc.), it is expected that a single instance having these features alone or in combination with other or single or plural instances of other features Embodiments (eg, an attachment surface, a local attraction site, etc.) are within the scope of the present invention, unless expressly indicated otherwise. The use of broader terms (such as "including", "including", "having", etc.) should be understood as providing narrower terms (such as "consisting of", "consisting essentially of", "consisting essentially of" Etc.).

Therefore, the scope of protection is not limited by the description set forth above, but is only limited by the patent application scope of the invention below, which includes all equivalents of the subject matter of the patent application scope of the invention. Each and every technical solution is incorporated into this specification as an embodiment of the present invention. Therefore, the patent application scope of the invention is a further description and is appended to one of the embodiments of the present invention. The description of a reference in the [Embodiment] of the examples does not recognize that it is the prior art of the present invention, and in particular may have any reference to a publication date after the priority date of the present application.

100‧‧‧Method 110‧‧‧Block 120‧‧‧Block 130‧‧‧Block 140‧‧‧Block 150‧‧‧Block 155‧‧‧Block 160‧‧‧Block 170‧‧‧Block 180‧‧‧Block 185‧‧‧Block 190‧‧‧Block 200‧‧‧Combined light and charged particle beam (CPB) system 202‧‧‧Vacuum chamber 204‧‧‧Charged particle beam (CPB) column 206‧‧‧ charged particle beam ( CPB)207‧‧‧Detector 208‧‧‧Sample 210‧‧‧Sample stage 212‧‧‧Laser optics 214‧‧‧XY motion stage 216‧‧‧‧Z motion stage 218‧‧‧Ray Beam 220‧‧‧Scanning mirror 222‧‧‧ Relay mirror 223‧‧‧Actuator 224‧‧‧Dichroic mirror 226‧‧‧ Lens 228‧‧‧Fiber 230‧‧‧Spectrometer 232‧‧‧Laser 238 ‧‧‧Light 240‧‧‧beam/laser beam/beam 250‧‧‧processor 252‧‧‧non-transitory machine-readable storage medium 300‧‧‧system 304‧‧‧ charged particle optical column 306‧‧ ‧Second charged particle beam (CPB)/ion beam/beam 400 ‧‧‧SEM image 402 ‧‧‧ central light spot / optical center area 406 ‧‧‧ first ring of light 500 ‧‧‧method 510‧‧‧ block 520‧‧‧Block 530‧‧‧Block 540‧‧‧Block 550‧‧‧Block 555‧‧‧Block 560‧‧‧Block 570‧‧‧Block 580‧‧‧Block 585‧‧‧Block 590‧‧‧Block 600‧‧‧Combined light and charged particle beam (CPB) system 602‧‧‧Vacuum chamber 604‧‧‧ charged particle beam (CPB) column/charged particle column 606‧‧‧ electron beam/ion beam/charged particle beam ( (CPB) 607‧‧‧ laser optics 608‧‧‧ sample 609‧‧‧ detector 610‧‧‧ sample stage 618‧‧‧ light/beam/laser beam 624‧‧‧bichromatic mirror 630‧‧‧ Laser 632‧‧‧Photodetector/spectrometer 634‧‧‧Laser beam 650‧‧‧Processor 652‧‧‧ Non-transitory machine-readable storage medium 700‧‧‧Optical image 702‧‧‧ Central spot 704‧‧‧Area 800‧‧‧Plot 801‧‧‧Laser beam 802‧‧‧Laser excitation volume/laser interaction volume 803‧‧‧Electron beam 804‧‧‧Electron beam excitation volume/E-beam mutual Active volume 806 ‧‧‧ layer 808 ‧ ‧ ‧ layer 810 ‧ ‧ ‧ center layer 812 ‧ ‧ ‧ layer 814 ‧ ‧ ‧ substrate 816 ‧ ‧ quantum well 900 ‧ ‧ ‧ chart 902 ‧ ‧ ‧ integrated laser diode intensity 904‧‧‧Laser power/horizontal axis 906‧‧‧ line 908‧‧‧ line 910‧‧‧point 1000‧‧‧ chart 1002‧‧‧integrated laser diode intensity/axis 1004‧‧‧ electron beam current 1006‧‧‧ line 1008‧‧‧ line 1010‧‧‧point 1100‧‧ ‧Graph 1102‧‧‧Integrated laser diode intensity/integrated intensity axis 1104‧‧‧Electron beam current 1200‧‧‧Method 1210‧‧‧Block 1220‧‧‧Block 1230‧‧‧Block 1240‧‧‧Block 1250 ‧‧‧Block 1255‧‧‧block 1260‧‧‧block 1270‧‧‧block 1280‧‧‧block 1285‧‧‧block 1290‧‧‧block 1300‧‧‧method 1302‧‧‧step 1304‧‧‧step 1306 ‧‧‧Step 1308‧‧‧Step

For a more thorough understanding of the present invention and its advantages, reference is now made to the following description in conjunction with the accompanying drawings, in which:

FIG. 1 is a flowchart of a method for aligning and focusing a light beam inside a vacuum chamber of a CPB system according to an embodiment of the present invention.

2 shows a combined light and CPB system according to an embodiment.

FIG. 3 shows a combined light and CPB system according to an embodiment.

FIG. 4 shows an SEM image of an imaging aid including an ultra-nanocrystalline diamond (UNCD) illuminated with a laser beam according to an embodiment.

5 is a flowchart of a method for aligning and focusing a light beam inside a vacuum chamber of a CPB system according to an embodiment.

6 shows a simplified schematic diagram of a combined light and CPB system according to an embodiment.

7 shows an SEM image formed by cathode luminescence emitted from the surface of a laser diode using an electron beam scan while using a laser beam to illuminate.

8 is a diagram showing the interaction between an electron beam and an imaging aid according to an embodiment.

9 is a graph of the integrated intensity of light emission from a laser diode during illumination with a laser, and the integrated intensity is plotted according to the power of the illuminated laser.

10 is a graph of the integrated intensity of light emission from the laser diode of FIG. 9 when irradiated with an electron beam without a laser beam, and the integrated intensity is plotted according to the current of the electron beam.

FIG. 11 is a graph showing experimental data of the integrated intensity of light emission from the CPB system of FIG. 6.

FIG. 12 is a flowchart of a method for aligning and focusing a light beam in a vacuum chamber of a CPB system according to an embodiment.

13 is a flowchart of a method for determining a property of a beam at a surface.

1300‧‧‧Method

1302‧‧‧Step

1304‧‧‧Step

1306‧‧‧Step

1308‧‧‧Step

Claims (20)

A method comprising: illuminating a region of a calibration surface with a light beam; scanning a charged particle beam onto the region of the calibration surface illuminated by the light beam; detecting a response from the incident of the charged particle beam The secondary radiation emitted by the zone; and the difference between the secondary radiation from the zone impacted by the charged particle beam and illuminated by the beam and the zone impacted by the charged particle beam and not illuminated by the beam to determine the A property of the beam at the calibration surface. The method of claim 1, wherein the imaging auxiliary device comprises nanocrystalline diamond. The method of claim 1, wherein determining a property of the light beam at the calibration surface includes determining the position of the light beam at the calibration surface. The method of claim 3, wherein scanning with the charged particle beam includes: positioning the charged particle beam at a point on the calibration surface using a charged particle beam reference frame, and wherein the determination that the beam is at the calibration surface The position includes: determining the position of the light beam in the charged particle beam reference system. The method of claim 3, further comprising adjusting the position of the area illuminated by the light beam. The method of claim 1, wherein determining a property of the light beam at the calibration surface includes determining the shape of the light beam at the calibration surface. The method of claim 1, further comprising: removing the imaging aid from the path of the beam and placing a workpiece in the path of the beam; and using the beam and using the charged particle beam to process or image the Artifacts. A method for observing a light beam in a sample chamber of a charged particle beam system, the method comprising: providing an imaging auxiliary device inside the sample chamber, the imaging auxiliary device having a calibration surface, the calibration surface being configured Causing a first light beam to illuminate any area on the calibration surface being subjected to irradiation by a second charged particle beam to change one of the intensity of secondary radiation emitted from the calibration surface caused by the second beam; When the second beam irradiates a region of the calibration surface and induces secondary radiation from the region, the first beam is used to illuminate the region, where the secondary radiation may be light, secondary electrons or reflective Scattering electrons; detecting the secondary radiation; generating an electronic signal corresponding to the intensity of the secondary radiation that changes with time; and determining an alignment property of the first beam by analyzing the electronic signal One value. The method of claim 8, further comprising acquiring a second radiation image of the calibration surface by scanning the calibration surface with the second beam according to a pattern, and wherein the area is irradiated by the second beam Illuminating the area with the first beam includes: irradiating the area with the first beam while the second beam is scanning the area. The method of claim 9, wherein: the secondary radiation image of the calibration surface includes an image of a beam spot of the first beam superimposed on the area; and the value for determining the alignment property includes: Analyze the secondary radiation image and the image of the beam spot. The method of claim 8, wherein the value of the alignment property is a first value of an alignment property of the beam when the first beam illuminates the area, and wherein the first beam is formed by a laser The beam system generates a laser beam, which further includes: using the first value of the alignment property to calculate a value that can change the value of the alignment property of the first beam to a second preselected value A first adjustment of the laser beam system; performing the first adjustment; and positioning a sample within the sample chamber such that a sample location selected for subsequent analysis and/or processing by the charged particle beam system is adjacent to The calibration surface. The method of claim 11, further comprising positioning the calibration surface at a concentric height of the sample chamber, and wherein: the first value of the alignment property includes when the first beam illuminates the area, the A beam spot of a first beam is at a position on the calibration surface; the second value of the alignment property is that the beam spot is located at the concentric height and adjacent to the calibration surface The position on the sample; the preselected value includes the position of the sample position; and performing the first adjustment to move the first beam so that the beam spot is approximately centered on the sample position. The method of claim 12, wherein illuminating the area of the calibration surface includes: traveling the first beam through a focusing optics that directs and focuses the first beam onto the calibration surface, And the method further includes: determining a value of the working distance of the focusing optics during illumination of the area by analyzing the electronic signal; using the value of the working distance to calculate a second of the charged particle beam system Adjustment, the second adjustment includes an adjustment of the working distance that will focus the first beam substantially at the concentric height; and performing the second adjustment. The method of claim 8, wherein providing the imaging assistance device comprises: providing the imaging assistance device as a thin layer disposed on a surface of the sample adjacent to the selected particle beam system At one of the areas of interest in one of the analysis and/or processing. The method of claim 8, wherein the first beam includes a laser beam, and the emission of secondary radiation includes the emission of secondary electrons, backscattered electrons, and/or caused by cathode luminescence in the area Visible light emission. The method of claim 8, wherein one of the laser threshold powers of a material of the imaging aid at the calibration surface is greater than the power of one of the first beams during the scanning of the area with the second beam and A power of the second beam; and less than a sum of the power of the first beam and the power of the second beam. A charged particle beam system, comprising: a sample chamber; an imaging auxiliary device disposed inside the sample chamber and having a calibration surface; a first subsystem configured to generate a light beam, And use the light beam to illuminate the calibration surface; a second subsystem configured to generate a charged particle beam, and the charged particle beam to irradiate the calibration surface; a detector configured to Measuring the intensity of the secondary radiation emitted from the calibration surface, and outputting an electronic signal conveying the value of the intensity that changes with time; and an arithmetic device configured to determine the value by analyzing the electronic signal One or more characteristics of the first beam, wherein based on simultaneous exposure of a region of the calibration surface to the first beam and the charged particle beam, the exposed region is caused to emit the secondary from the exposed region at a first intensity Radiation, and in that, based on exposing the area to the charged particle beam without exposing the area to the beam, causes the exposed area to emit the secondary radiation at a second intensity different from the first intensity. The system of claim 17, wherein: the second subsystem includes a focused ion beam column, an electron microscope, or a combination thereof; and the first subsystem includes a laser beam device and a focusing optics, the The laser beam device is configured to generate the first beam as a laser beam, and the focusing optics are configured to focus and direct the laser beam from a position inside the sample chamber to the calibration surface on. The system of claim 17, wherein the imaging aid at the calibration surface includes ultra-nanocrystalline diamonds. The system of claim 17, wherein the imaging auxiliary device includes a layer of a first material, the layer is disposed on a substrate including a second material, and the calibration surface is a surface of the layer.

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