TW202002328A - Flexible display panel and method of fabricating the same - Google Patents

Abstract

A flexible display panel and a method of fabricating the same are provided. The flexible display panel has a bending region, a first region, and a second region. The flexible display panel includes a buffer layer and a pixel unit. The buffer layer is disposed on a flexible substrate. The pixel unit is disposed on the buffer layer of the first region. The buffer layer has a dopant, wherein the concentration of the dopant in the bending region is [M]; the concentration of the dopant in the first region is [M]₁ , and

or

Description

Flexible display panel and manufacturing method thereof

The present invention relates to a display panel and a manufacturing method thereof, and particularly relates to a flexible display panel and a manufacturing method thereof.

With the widespread use of portable displays, the development of flexible displays is becoming more and more active, in order to achieve the purpose of displaying under different curved surfaces. Generally speaking, the substrates used for flexible displays are flexible substrates. However, the flexible substrates do not perform well on water and oxygen barriers. After long-term use, moisture or oxygen in the environment will enter the flexible substrate. Inside the flexible display, the flexible display is prone to short-circuit and cause display abnormality.

In order to improve the water and oxygen barrier performance of the flexible substrate, the flexible substrate may be composed of a flexible substrate and a buffer layer. However, the flexible display is likely to cause damage to the buffer layer when it is bent (for example, the buffer layer generates cracks at the bend), resulting in the problem that the trace formed on it is likely to break.

The invention provides a flexible display panel and a manufacturing method thereof, which can improve the problem that the buffer layer is prone to cracks when bent.

或

。An embodiment of the present invention provides a flexible display panel having a bending area, a first area, and a second area, wherein the bending area is located between the first area and the second area, and the flexible display panel includes a buffer Layers and pixel units. The buffer layer is provided on the flexible substrate. The pixel unit is disposed on the buffer layer in the first area. The buffer layer has a doping, wherein the concentration of the doping in the bending area is [M]; the concentration of the doping in the first area is [M] ₁ , and

or

.

或

。An embodiment of the present invention provides a method for manufacturing a flexible display panel, which includes the following steps: forming a buffer material layer on a flexible substrate; modifying the buffer material layer with a patterned mask to form a buffer layer, The buffer layer has a bending region, a first region and a second region, and the bending region is located between the first region and the second region; a pixel unit is formed on the buffer layer of the first region, wherein the buffer layer has a doping , And the concentration of doping in the bending zone is [M]; the concentration of doping in the first zone is [M] ₁ , and

or

.

或

，如此可藉由緩衝層中的摻質濃度來調整不同區域之壓應力（compressive stress）或張應力（tensile stress），使得緩衝層受外力彎折時所產生之外應力不易對彎折區的緩衝層產生破壞，進而改善緩衝層於彎折時易產生裂縫的問題。Based on the above, in the flexible display panel and its manufacturing method of the present invention, since the concentration of doping in the bending region is [M], the concentration of doping in the first region is [M] ₁ , and

or

In this way, the compressive stress or tensile stress in different regions can be adjusted by the dopant concentration in the buffer layer, so that the external stress generated when the buffer layer is bent by external force is not easy to the bending area. The buffer layer is damaged, thereby improving the problem that the buffer layer is prone to cracks when bent.

In order to make the above-mentioned features and advantages of the present invention more obvious and understandable, the embodiments are specifically described below in conjunction with the accompanying drawings for detailed description as follows.

The present invention will be explained more fully below with reference to the drawings of this embodiment. However, the present invention can also be embodied in various forms, and should not be limited to the embodiments described herein. The size and thickness of each member in the drawings will be appropriately adjusted for clarity, and the invention is not limited thereto. The same or similar reference numbers indicate the same or similar elements, and the following paragraphs will not repeat them one by one. In addition, the directional terms mentioned in the embodiments, for example: up, down, left, right, front or back, etc., are only the directions referring to the attached drawings. Therefore, the directional terminology is used to illustrate rather than limit the invention.

1A to 1F are schematic cross-sectional views of a method for manufacturing a flexible display panel according to an embodiment of the invention. 2A and 2B are schematic cross-sectional views of a method for manufacturing a flexible display panel according to another embodiment of the invention. Figure 3 shows the relationship between the concentration of different dopants and compressive stress.

First, referring to FIG. 1A, a flexible substrate FS is formed on a carrier board CS. The carrier board CS may be a rigid substrate, which is not easily deformed by external forces during the manufacturing process, so that the flexible substrate FS formed on the carrier board CS has good flatness, resulting in subsequent formation on the flexible substrate FS The upper film layer has good stability. The material of the carrier board CS may be glass, quartz, organic polymer, metal or other suitable materials. The material of the flexible substrate FS is, for example, polyimide (Polyimide, PI), polyethylene naphthalate (PEN), polyethylene terephthalate (PET), or other soft materials. The formation method of the flexible substrate FS is, for example, a slit coating method, a spin coating method, or a combination thereof.

Next, the buffer material layer BML is formed on the flexible substrate FS. The material of the buffer material layer BML may be an inorganic material, such as silicon oxide (SiO _x ), silicon nitride (SiN _x ), or a combination thereof. The method for forming the buffer material layer BML is, for example, chemical vapor deposition (CVD), atomic layer deposition (ALD), or a combination thereof.

或

。在本實施例中，可選擇性地對緩衝材料層BML中之預定彎折區域進行改質處理MT，使得

，但本發明不以此為限。在本實施例中，改質處理MT可包括離子佈植製程，且圖案化罩幕MS暴露出緩衝材料層BML中與彎折區BR相對應的預定彎折區域。Then, referring to FIGS. 1A and 1B at the same time, the buffer material layer BML is modified by the patterned mask MS to form a buffer layer BL, wherein the buffer layer BL has a first region R1, a second region R2 and Bending zone BR between the two. For example, the modification process MT can adjust the compressive or tensile stress in different regions by changing the concentration of dopants in the buffer layer BL, so that the bending region BR of the buffer layer BL is generated when it is bent by an external force. Stress is not easy to damage the bending area BR, thereby improving the problem that the buffer layer BL is prone to cracks at the bending position. For example, ion implantation can be used to dope atoms into the predetermined bending region of the buffer material layer BML (corresponding to the bending region BR of the buffer layer BL) to replace the lattice position of some raw materials, resulting in buffering The layer BL generates compressive stress in the bending region BR and bends by itself. Therefore, when the buffer layer BL is bent by an external force to generate external stress (ie, tensile stress) in the bending region BR, the above-mentioned compressive stress can partially offset the additional stress, making the buffer layer BL of the bending region BR less likely to crack. The buffer layer may have a doping, and the concentration of the doping in the bending region BR may be [M]; the concentration of the doping in the first region R1 may be [M] ₁ , and

or

. In this embodiment, the predetermined bending region in the buffer material layer BML can be selectively modified MT, so that

, But the invention is not limited to this. In this embodiment, the modification process MT may include an ion implantation process, and the patterned mask MS exposes a predetermined bending region corresponding to the bending region BR in the buffer material layer BML.

或

。舉例來說，在緩衝材料層BML採用材料具有較大壓應力的情況下（即緩衝材料層BML呈現自然彎曲），可採用雷射處理製程（例如雷射去氫處理程序）對緩衝材料層BML中之非預定彎折區域進行改質處理MT，以於非預定彎折區域中產生張應力。因此，當提供外力來確保第一區R1或第二區R2的緩衝層BL呈現平坦狀時，上述的張應力可部分抵消外力所產生的外應力（壓應力），使得緩衝層BL不易產生裂縫，在此實施例中，

可小於0.1。在本實施例中，改質處理MT可包括雷射處理製程，且圖案化罩幕MS可暴露出緩衝材料層BML中與第一區R1或第二區R2相對應的非預定彎折區域。In other embodiments, the non-predetermined bending region (for example, the first region R1 or the second region R2) in the buffer material layer BML may be selectively subjected to a modification treatment MT (as shown in FIGS. 2A and 2B ), so that

or

. For example, when the material of the buffer material layer BML has a large compressive stress (that is, the buffer material layer BML exhibits natural bending), a laser processing process (such as a laser dehydrogenation process) can be used to buffer the material layer BML The non-predetermined bending region in the current is subjected to a modification process MT to generate tensile stress in the non-predetermined bending region. Therefore, when an external force is provided to ensure that the buffer layer BL in the first region R1 or the second region R2 is flat, the above-mentioned tensile stress can partially offset the external stress (compressive stress) generated by the external force, making the buffer layer BL less prone to cracking , In this embodiment,

Can be less than 0.1. In this embodiment, the modification process MT may include a laser processing process, and the patterned mask MS may expose an unintended bending region in the buffer material layer BML corresponding to the first region R1 or the second region R2.

可大於10。In addition, the modification treatment MT can also adopt ion implantation to dope atoms in the unintended bending region of the buffer material layer BML to replace the lattice position of some raw materials, so that the buffer layer BL is in the first region R1 Or the second region R2 generates compressive stress. Therefore, when an external force is provided to ensure that the first region R1 or the second region R2 of the buffer layer BL is flat, the above-mentioned compressive stress can partially offset the external stress (ie, tensile stress) generated by the external force, making the buffer layer BL difficult to generate Crack, in this embodiment,

Can be greater than 10.

或

。In other embodiments, the predetermined bending region and the non-predetermined bending region can be selectively modified according to requirements. For example, the flexible display panel is bent in the display area and the non-display area. In order to conform to the shape of the upper plate, there are different radii of curvature in different areas. In other words, in addition to the modification process MT of the first region R1 or the bending region BR of the buffer layer BL, in some embodiments, the second region R2 of the buffer layer BL can also be modified according to requirements Processing MT, where the concentration of the dopant in the second zone may be [M] ₂ ,

or

.

或

。舉例來說，摻質可為硼(B)，其中摻質於彎折區的濃度為[B]；而摻質於第一區R1的濃度為[B]₁ ，且

。摻質可為氫(H)，其中摻質於彎折區BR的濃度為[H]；而摻質於第一區R1的濃度為[H]₁ ，且

。在一些實施例中，第一區R1或彎折區BR中摻質的濃度可大於或等於10¹⁷ 原子/立方公分且小於或等於10²⁴ 原子/立方公分。在另一些實施例中，第一區R1或彎折區BR中摻質的濃度大於或等於10¹⁸ 原子/立方公分且小於或等於10²³ 原子/立方公分。應注意的是，可根據可撓式顯示面板於不同區域之彎折所需的角度來調整緩衝層BL中摻質的濃度。在一些實施例中，可藉由二次離子質譜法（SIMS）來測量上述摻質的濃度，但本發明不以此為限。In some embodiments, the above-mentioned dopants may include hydrogen (H), helium (He), boron (B), nitrogen (N), oxygen (O), neon (Ne), argon (Ar), or a combination thereof. In addition, as shown in FIG. 3, the higher the concentration of different dopants, the greater the compressive stress they generate. In this embodiment, the dopant concentration of one of the first region R1 and the bending region BR may be greater than that of the other by at least one order of magnitude, ie

or

. For example, the dopant may be boron (B), wherein the concentration of the dopant in the bending region is [B]; and the concentration of the dopant in the first region R1 is [B] ₁ , and

. The dopant may be hydrogen (H), wherein the concentration of the dopant in the bending zone BR is [H]; and the concentration of the dopant in the first zone R1 is [H] ₁ , and

. In some embodiments, the concentration of the dopant in the first region R1 or the bending region BR may be greater than or equal to 10 ¹⁷ atoms/cubic centimeter and less than or equal to 10 ²⁴ atoms/cubic centimeter. In other embodiments, the concentration of the dopant in the first region R1 or the bending region BR is greater than or equal to 10 ¹⁸ atoms/cubic centimeter and less than or equal to 10 ²³ atoms/cubic centimeter. It should be noted that the concentration of the dopant in the buffer layer BL can be adjusted according to the angle required for bending the flexible display panel in different regions. In some embodiments, the concentration of the above dopant can be measured by secondary ion mass spectrometry (SIMS), but the invention is not limited thereto.

或

。In some embodiments, the dopant concentration of one of the second region R2 and the bending region BR may be greater than that of the other by at least one order of magnitude, ie

or

.

Next, referring to FIGS. 1C to 1E, a pixel unit PU is formed on the first region R1 of the buffer layer BL to form the flexible display panel 100. In this embodiment, the pixel unit PU may include a driving element DE and a pixel electrode PE. The method for forming the pixel unit PU will be described below with an exemplary embodiment, but the invention is not limited thereto.

First, referring to FIG. 1C, a channel layer CH may be formed on the buffer layer BL of the first region R1. The material of the channel layer CH may be a semiconductor material, such as amorphous silicon, microcrystalline silicon, single crystal silicon, organic semiconductor material, oxide semiconductor material, or other suitable materials. In some embodiments, a source contact region for connecting a source electrode and a drain contact region for connecting a drain electrode may be selectively formed on opposite sides of the channel layer CH. In addition, in order to reduce the contact resistance between the channel layer CH and the source/drain, an ohmic contact layer may be selectively formed on the channel layer CH. In this embodiment, the method for forming the channel layer CH may be to first form the amorphous silicon layer by chemical vapor deposition, and then use an excimer laser to anneal the amorphous silicon layer to form polysilicon The channel layer CH.

Then, a gate insulating layer GI covering the channel layer CH is formed on the buffer layer BL. The material of the gate insulating layer GI may be an inorganic material. For example, the inorganic dielectric material may be silicon oxide, silicon nitride, silicon oxynitride, or a combination thereof. The formation method of the gate insulating layer GI is, for example, a chemical vapor deposition method, a spin coating method, or a combination thereof. In this embodiment, the gate insulating layer GI covers the buffer layer BL of the first region R1, the bending region BR, and the second region R2.

Next, the gate G is formed on the gate insulating layer GI of the first region R1. The material of the gate G may be a conductive material, such as metal, metal oxide, metal nitride, metal oxynitride, or a combination thereof. The formation method of the gate electrode G may be a physical vapor deposition method (Physical Vapor Deposition, PVD). In addition, the conductor layer M1 may be formed on the gate insulating layer GI of the first region R1 and the second region R2, respectively. The material of the conductor layer M1 may be a conductive material, such as metal, metal oxide, metal nitride, metal oxynitride, or a combination thereof. The method of forming the conductor layer M1 may be a physical vapor deposition method. In some embodiments, the gate G and the conductor layer M1 may be formed by the same patterned conductive layer. In some embodiments, the conductor layer M1 may be a scan line, that is, the conductor layer M1 may be electrically connected to the gate G.

After that, a dielectric layer ILD covering the gate G and the conductor layer M1 is formed on the gate insulating layer GI. The material of the dielectric layer ILD may be an inorganic dielectric material, an organic dielectric material, or a combination thereof. For example, the inorganic material may be silicon oxide, silicon nitride, silicon oxynitride, or a combination thereof; the organic material may be a polymer material such as polyimide-based resin, epoxy-based resin, or acrylic-based resin. The method for forming the dielectric layer ILD is, for example, a chemical vapor deposition method, a spin coating method, or a combination thereof.

1D, a source electrode S and a drain electrode D are formed on the dielectric layer ILD to form a driving element DE. The materials of the source electrode S and the drain electrode D may be conductive materials, such as metals, metal oxides, metal nitrides, metal oxynitrides, or a combination thereof. In this embodiment, the source electrode S and the drain electrode D can be connected to the channel layer CH through the contact windows C1 and C2, respectively. The method of forming the source electrode S and the drain electrode D is, for example, a physical vapor deposition method. In addition, a connecting line M2 (for example, used to connect the pixel unit PU and the driving circuit DC, as shown in FIG. 1F) may be formed on the dielectric layer ILD of the first region R1, the bending region BR, and the second region R2, respectively In this case, the conductor layer M1 located in the first region R1 can be electrically connected to the conductor layer M1 in the second region R2 through the connection line M2. The material of the connection line M2 may be a conductive material, such as metal, metal oxide, metal nitride, metal oxynitride, or a combination thereof. The method for forming the connection line M2 may be a physical vapor deposition method. In some embodiments, the source S/drain D and the connection line M2 may be formed by the same patterned conductive layer.

In some embodiments, before forming the connection line M2, a trench T may be selectively formed in the buffer layer BL, the gate insulating layer GI, and the dielectric layer ILD of the bending region, and the connection line M2 formed later is formed On the dielectric layer ILD and the bottom surface and sidewalls of the trench T. In this way, when the buffer layer BL is bent by an external force to generate external stress in the bending region BR, the problem of disconnection of the connection line M2 provided in the bending region BR can be avoided. In some embodiments, the trench T may be formed in the bending region BR of the buffer layer BL after the modification process MT, but the invention is not limited thereto. In other embodiments, the trench T may be formed in a region of the buffer material layer BML corresponding to the bending region BR before the modification process MT.

Referring to FIG. 1E, an insulating layer PL covering the source electrode S and the drain electrode D is formed on the dielectric layer ILD. The material of the insulating layer PL may be an inorganic dielectric material, an organic dielectric material, or a combination thereof. For example, the inorganic material may be silicon oxide, silicon nitride, silicon oxynitride, or a combination thereof; the organic material may be a polymer material such as polyimide-based resin, epoxy-based resin, or acrylic-based resin. The formation method of the insulating layer PL is, for example, a chemical vapor deposition method, a spin coating method, or a combination thereof.

Next, a pixel electrode PE is formed on the insulating layer PL. The material of the pixel electrode PE may be a transparent conductive material, such as indium tin oxide, indium zinc oxide, aluminum tin oxide, aluminum zinc oxide or indium gallium zinc oxide. However, it is not limited to this. In other embodiments, the pixel electricity may also be a reflective conductive material or a combination of a reflective conductive material and a transparent conductive material. The pixel electrode PE is formed by, for example, forming a pixel electrode material layer (not shown) on the insulating layer PL, and then patterning the pixel electrode material layer to form the pixel electrode PE. In this embodiment, the pixel electrode PE is formed on the insulating layer PL of the first region R1, and the pixel electrode PE is electrically connected to the driving element DE. For example, the pixel electrode PE may be electrically connected to the drain D of the driving element DE.

1E and 1F, after the pixel unit PU is formed, the carrier board CS may be removed. After removing the carrier board CS, external force may be applied to the bending area BR to bend the flexible display panel 100, or external force may be applied to the first area R1 or the second area R2 to ensure the flexible display panel 100 is flat in the first region R1 or the second region R2. In this embodiment, after removing the carrier board CS, an external force may be applied to the bending region BR to bend the flexible display panel 100, wherein the second region R2 of the buffer layer BL is opposite to the first region R1 ( As shown in Figure 1F).

Referring to FIG. 1F, the flexible display panel 100 may optionally include a driving circuit DC, which is disposed on the buffer layer BL of the second region R2, and the driving circuit DC may be provided through the connection line M2 disposed in the bending region BR The pixel unit PU electrically connected to the first area, it should be noted that the pixel unit PU connected to the first area R1 by the driving circuit DC may also include other elements (eg, antistatic elements, etc.) as needed. In this way, since the second region R2 of the flexible display panel 100 is bent to the opposite side of the first region R1 (for example, the side away from the driving element DE), the frame can be narrower and the flexible display panel can be improved The ratio of the display area of 100. In some embodiments, the pattern of the connection line M2 may be a mesh pattern, so that when the buffer layer BL is bent by an external force to generate external stress in the bending area BR, the connection line disposed in the bending area BR can be further avoided M2 has the problem of disconnection. In some embodiments, the connecting line M2 may have a fan-out structure to facilitate connecting the driving circuit DC.

Hereinafter, the modification process of the buffer material layer under different process steps of the present invention will be described with reference to FIGS. 4 and 5. FIG. 4 shows another embodiment of the present invention for modifying the buffer material layer under different process steps. FIG. 5 is another embodiment of the present invention for modifying the buffer material layer under different process steps.

Referring to FIG. 4, after the gate insulating layer GI is formed, the buffer material layer BML disposed in the bending region BR is selectively subjected to a modification process MT to form the buffer layer BL. In this way, since the gate insulating layer GI covers the buffer material layer BML, surface defects of the buffer layer BL caused by ion bombardment can be avoided, and the gate insulating layer GI of the modified MT can subsequently form the trench T It is removed during the manufacturing process (as shown in Figure 1D), so it will not affect the performance of the flexible display panel. In addition, as shown in FIG. 5, after the subsequent formation of the dielectric layer ILD, the buffer layer BL provided in the bending region BR may be selectively subjected to a modification process MT, and the gate of the modification process MT The insulating layer GI and the dielectric layer ILD can be removed in the subsequent process of forming the trench T (as shown in FIG. 1D), so it does not affect the performance of the flexible display panel. In other words, MT (such as ion implantation) can be modified at the same location and in different layers to ensure the depth required for ion implantation.

Hereinafter, the flexible display panel of this embodiment will be described with reference to FIGS. 1E and 1F. In addition, although the flexible display panel of this embodiment is described by taking the above-mentioned manufacturing method as an example, it is not limited to this. 6 is a schematic cross-sectional view of a flexible display panel according to another embodiment of the invention.

或

。1E and 1F, the flexible display panel 100 may have a bending region BR, a first region R1 and a second region R2, wherein the bending region BR may be located between the first region R1 and the second region R2, And the flexible display panel 100 may include a buffer layer BL and a pixel unit PU. The buffer layer BL may be provided on the flexible substrate FS. The pixel unit PU may be disposed on the buffer layer BL of the first region R1. The buffer layer BL may have a doping, wherein the concentration of the doping in the bending region BR is [M]; and the concentration of the doping in the first region R1 is [M] ₁ , and

or

.

In some embodiments, the buffer layer BL has a trench T in the bending region BR.

In some embodiments, the concentration of the dopant in the first region R1 is greater than or equal to 10 ¹⁷ atoms/cubic centimeter and less than or equal to 10 ²⁴ atoms/cubic centimeter.

或

。In some embodiments, the concentration of the above dopant in the second region R2 is [M] ₂ , and

or

.

In some embodiments, the flexible display panel 100 further includes a driving circuit DC and a connection line M2. The driving circuit DC is disposed on the buffer layer BL of the second region R2. The connection line M2 is disposed on the buffer layer BL of the bending region BR, and the connection line M2 is electrically connected to the pixel unit PU and the driving circuit DC.

In some embodiments, the predetermined bending region (for example, the bending region BR) and the non-predetermined bending region (for example, the first region R1) in the buffer material layer BML may be selectively subjected to a modification process MT, so that the bending The radius of curvature of the area BR is smaller than the radius of curvature of the first area R1 (as shown in FIG. 6).

或

，如此可藉由緩衝層中的摻質濃度來調整不同區域之壓應力或張應力，使得緩衝層受外力彎折時所產生之外應力不易對彎折區的緩衝層產生破壞，進而改善緩衝層於彎折時易產生裂縫的問題。In summary, in the flexible display panel and its manufacturing method according to an embodiment of the present invention, since the concentration doped in the bending region is [M], the concentration doped in the first region is [M] ₁ , and

or

In this way, the compressive stress or tensile stress in different regions can be adjusted by the dopant concentration in the buffer layer, so that the external stress generated when the buffer layer is bent by external force is not easy to damage the buffer layer in the bending region, thereby improving the buffer The layer is prone to cracks when it is bent.

Although the present invention has been disclosed as above with examples, it is not intended to limit the present invention. Any person with ordinary knowledge in the technical field can make some changes and modifications without departing from the spirit and scope of the present invention. The scope of protection of the present invention shall be subject to the scope defined in the appended patent application.

100‧‧‧Flexible display panel CS‧‧‧Carrier board FS‧‧‧Soft substrate BML‧‧‧Buffer material layer MS‧‧‧Patterned mask MT‧‧‧Modification treatment R1‧‧‧ First area R2‧‧‧The second zone BR‧‧‧Bending zone BL‧‧‧Buffer layer PU‧‧‧Pixel unit DE‧‧‧Drive element PE‧‧‧Pixel electrode CH‧‧‧Channel layer GI‧‧‧ Gate insulating layer G‧‧‧Gate M1‧‧‧Conductor layer ILD‧‧‧Dielectric layer S‧‧‧Source D‧‧‧Drain C1, C2‧‧‧Contact window M2‧‧‧Connecting wire DC‧ ‧‧Drive circuit T‧‧‧Trench PL‧‧‧Insulation layer

1A to 1F are schematic cross-sectional views of a method for manufacturing a flexible display panel according to an embodiment of the invention. 2A and 2B are schematic cross-sectional views of a method for manufacturing a flexible display panel according to another embodiment of the invention. Figure 3 shows the relationship between the concentration of different dopants and compressive stress. FIG. 4 shows another embodiment of the present invention for modifying the buffer material layer under different process steps. FIG. 5 is another embodiment of the present invention for modifying the buffer material layer under different process steps. 6 is a schematic cross-sectional view of a flexible display panel according to another embodiment of the invention.

100‧‧‧Flexible display panel

CS‧‧‧ Carrier board

FS‧‧‧ flexible substrate

R1‧‧‧ District 1

R2‧‧‧District 2

BR‧‧‧Bending area

BL‧‧‧Buffer layer

PU‧‧‧Pixel unit

DE‧‧‧Drive element

PE‧‧‧Pixel electrode

CH‧‧‧channel layer

GI‧‧‧Gate insulation

G‧‧‧Gate

M1‧‧‧Conductor layer

ILD‧‧‧dielectric layer

S‧‧‧Source

D‧‧‧ Jiji

C1, C2‧‧‧Contact window

M2‧‧‧ connection cable

T‧‧‧Groove

PL‧‧‧Insulation

Claims (18)

A flexible display panel has a bending area, a first area and a second area, wherein the bending area is located between the first area and the second area, and the flexible display panel includes: A buffer layer disposed on a flexible substrate; and a pixel unit disposed on the buffer layer in the first region, wherein the buffer layer has a dopant, and the concentration of the dopant in the bending region is [ M], the concentration of the dopant in the first region is [M] ₁ , and

or

. The flexible display panel as described in item 1 of the patent application range, wherein the radius of curvature of the bending zone is smaller than the radius of curvature of the first zone. The flexible display panel as described in item 1 of the patent application scope, wherein the concentration of the dopant in the second region is [M] ₂ ,

or

. The flexible display panel as described in item 1 of the patent application range, wherein the buffer layer has a groove in the bending region. The flexible display panel as described in item 1 of the patent application scope, wherein the concentration [M] ₁ of the dopant in the first region is greater than or equal to 10 ¹⁷ atoms/cm 3 and less than or equal to 10 ²⁴ atoms/ Cubic centimeters. The flexible display panel as described in item 1 of the patent application scope, wherein the dopant includes hydrogen (H), helium (He), boron (B), nitrogen (N), oxygen (O), neon (Ne) , Argon (Ar) or a combination thereof. The flexible display panel as described in item 1 of the patent application scope, wherein the dopant is boron (B), the concentration of the dopant in the bending region is [B], and the dopant is in the first region The concentration is [B] ₁ , and

. The flexible display panel as described in item 1 of the patent application scope, wherein the dopant is hydrogen (H), the concentration of the dopant in the bending region is [H], and the dopant is in the first region The concentration is [H] ₁ , and

. The flexible display panel as described in item 1 of the scope of the patent application further includes: a driving circuit disposed on the buffer layer in the second area; and a connecting line disposed on the buffer layer in the bending area And the connecting line is electrically connected to the pixel unit and the driving circuit. A method for manufacturing a flexible display panel includes: forming a buffer material layer on a flexible substrate; modifying the buffer material layer by a patterned mask to form a buffer layer, wherein the buffer layer It has a bending area, a first area and a second area, and the bending area is located between the first area and the second area; and a pixel unit is formed on the buffer layer of the first area , Wherein the buffer layer has a dopant, the concentration of the dopant in the bending region is [M], and the concentration of the dopant in the first region is [M] ₁ , and

or

. The method for manufacturing a flexible display panel as described in item 10 of the patent application scope, wherein the concentration of the dopant in the second region is [M] ₂ ,

or

. The method for manufacturing a flexible display panel as described in item 10 of the patent application range, wherein the modification process includes an ion implantation process, and the patterned mask exposes the buffer material layer and the bending region Corresponding area. The method for manufacturing a flexible display panel as described in item 10 of the patent application scope, wherein the modification process includes a laser processing process, and the patterned mask exposes the buffer material layer and the first region or The area corresponding to this second area. The method for manufacturing a flexible display panel as described in item 10 of the patent application range, wherein the concentration [M] ₁ of the dopant in the first region is greater than or equal to 10 ¹⁷ atoms/cm3 and less than or equal to 10 ²⁴ atoms/cm3. The method for manufacturing a flexible display panel as described in item 10 of the patent application scope, wherein the dopant includes hydrogen (H), helium (He), boron (B), nitrogen (N), oxygen (O), neon (Ne), argon (Ar), or a combination thereof. The method for manufacturing a flexible display panel as described in item 10 of the patent application scope further includes: after performing the modification process, forming a trench in the bending region of the buffer layer. The method for manufacturing a flexible display panel as described in item 10 of the patent application scope further includes: before performing the modification process, forming a groove in the buffer material layer corresponding to the bending region. The method for manufacturing a flexible display panel as described in item 10 of the patent application scope, wherein after forming the buffer material layer and before performing the modification process, further comprising: forming a channel layer on the buffer material layer; and forming An insulating layer covers the channel layer and the buffer material layer; and after the modification process, it further includes forming a trench in the buffer layer and the insulating layer in the bending region.

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