TW202000302A - Corrosion-resistant gas mixing device and plasma processing equipment more anti-corrosive and cost-saving than the existing way of forming an anodized oxide layer on the surface of aluminum material - Google Patents

Abstract

This invention discloses a corrosion-resistant gas mixing device and a plasma processing equipment. The gas mixing device includes: a support baffle, a first gas baffle, a second gas baffle, and a mounting substrate, wherein the support baffle is provided thereon with at least one first gas inlet hole and at least one second gas inlet hole; the first gas baffle is provided with a first mixing channel and at least one first mixed gas outlet hole; the second gas baffle is provided with a second mixing channel and at least one second mixed gas outlet hole; the mounting substrate is provided with at least one third mixed gas outlet hole; the first gas inlet hole, the second gas inlet hole, and the inner wall of the third mixed gas outlet hole, the bottom surface of the support baffle and the top surface of the mounting substrate are provided with a yttrium oxide coating; the material of the first gas baffle and the second gas baffle are anti-corrosive plastic. This invention is more anti-corrosive and cost-saving than the existing way of forming an anodized oxide layer on the surface of aluminum material.

Description

Corrosion-resistant gas mixing device and plasma processing equipment

The invention relates to a device for mixing different gases, in particular to a corrosion-resistant gas mixing device and plasma processing equipment.

In the plasma etching process, the reaction gas needs to be mixed through the gas mixing device before entering the reaction chamber through the gas shower head. The material of the existing gas mixing device for plasma processing equipment is aluminum. When the reaction gas includes corrosive gases (such as Cl ₂ and HBr), in order to avoid corrosion of the aluminum material by corrosive gases, it is currently used in The protection method of anodized layer on the surface of aluminum material is to try to solve the corrosion problem of corrosive gas to the gas mixing device. However, in the actual application process, it was found that the method of protecting the anodized layer on the surface of the aluminum material still has the problem of corrosion.

Therefore, the industry needs a corrosion-resistant gas mixing device suitable for plasma processing equipment.

The purpose of the present invention is to provide a corrosion-resistant gas mixing device and plasma processing equipment to solve the problem that corrosive gases will corrode the gas mixing device itself during the mixing process, thereby solving the problem of the service life of the gas mixing device and the gas mixing device The influence of the impurities produced by the corrosion on the subsequent process.

To achieve the above object, the present invention provides a corrosion-resistant gas mixing device, which includes:

Support baffle, first gas baffle provided under the support baffle, second gas baffle provided under the first gas baffle, and mounting substrate provided under the second gas baffle; the mounting substrate and the gas The shower head is connected; the support baffle and the mounting substrate form a closed space; the first gas baffle and the second gas baffle are disposed in the closed space;

The support baffle is provided with at least one first gas inlet hole for introducing the first gas and at least one second gas inlet hole for introducing the second gas;

The first gas baffle is provided with a first mixing channel for mixing the first gas and the second gas and at least one first mixed gas outlet hole penetrating the first gas baffle;

The second gas baffle is provided with a second mixing channel for mixing the first gas and the second gas and at least one second mixed gas outlet hole penetrating the second gas baffle;

At least one third mixed gas outlet hole is provided on the mounting substrate;

The first mixed gas outlet hole is connected to the second mixing channel, and the reaction gas mixed through the first gas baffle is sent to the second mixing channel for secondary mixing;

The reaction gas flowing out of the second mixed gas outlet hole enters the gas shower head through the third mixed gas outlet hole;

An inner wall of the first gas inlet hole, the second gas inlet hole and the third mixed gas outlet hole, the bottom surface of the supporting baffle and the top surface of the mounting substrate are provided with an yttrium oxide coating; the first gas barrier The material of the board and the second gas baffle is anti-corrosion plastic.

In the above-mentioned corrosion-resistant gas mixing device, a gas diffusion space is provided between the second gas baffle and the mounting substrate.

In the above corrosion-resistant gas mixing device, the purity of the yttrium oxide in the yttrium oxide coating is greater than 99.9%.

In the above-mentioned corrosion-resistant gas mixing device, the porosity of the yttrium oxide coating is less than 5%.

In the above corrosion-resistant gas mixing device, the yttrium oxide coating is prepared by plasma spraying.

In the above corrosion-resistant gas mixing device, the thickness of the yttrium oxide coating on the bottom surface of the supporting baffle is 20-110 μm; the yttrium oxide coating on the inner walls of the first gas inlet hole and the second gas inlet hole The thickness is 50-100 μm; the thickness of the yttrium oxide coating on the top surface of the mounting substrate is 20-110 μm; the thickness of the yttrium oxide coating on the inner wall of the third mixed gas outlet is 10-30 μm.

In the above corrosion-resistant gas mixing device, the corrosion-resistant plastic is Teflon or polyimide.

In the above corrosion-resistant gas mixing device, the material of the support baffle and the mounting substrate is aluminum.

The above-mentioned corrosion-resistant gas mixing device, wherein the whole of the first gas baffle and the second gas baffle forms a cavity for gas mixing with the left and right sides of the sealed space; the cavity At least one first gas inlet hole and at least one second gas inlet hole are provided on the support baffle at the top of the body; at least one third mixed gas outlet hole is provided on the mounting substrate at the bottom of the cavity.

In the above corrosion-resistant gas mixing device, a seal ring accommodating groove is provided at the bottom of the support baffle in contact with the mounting substrate, and a seal ring is provided in the seal ring accommodating groove.

In the above-mentioned corrosion-resistant gas mixing device, the support baffle, the first gas baffle, and the second gas baffle are integrally connected by bolts; the support baffle and the mounting substrate are connected by bolts.

The present invention also provides a plasma processing apparatus, wherein the plasma processing apparatus includes the above-mentioned corrosion-resistant gas mixing device.

Compared with the conventional technology, the present invention has the following beneficial effects:

Yttrium oxide itself is a very stable and corrosion-resistant material, so spraying it on the surface of the support baffle and the mounting substrate can effectively protect the aluminum material from corrosion during the mixing process of the corrosive gas; the first gas The material of the baffle and the second gas baffle is made of anti-corrosion plastic. Also because the anti-corrosion plastic is very stable and has good anti-corrosion performance, it will not be corroded during the gas mixing process. Using the corrosion-resistant gas mixing device provided by the present invention is more corrosion-resistant than the current method of forming an anodized layer on the surface of the aluminum material, and saves costs. The problem of corrosion of the gas mixing device during the mixing process of the corrosive gas is fundamentally solved, thereby greatly prolonging the service life of the gas mixing device, thereby avoiding the influence of the impurities generated by the corrosion of the gas mixing device on the subsequent process.

The present invention will be further described below through specific embodiments with reference to the accompanying drawings. These embodiments are only used to illustrate the present invention, not to limit the protection scope of the present invention.

As shown in FIGS. 1 and 2, the present invention provides a corrosion-resistant gas mixing device, which includes:

Support baffle 1, first gas baffle 2 provided under the support baffle 1, second gas baffle 3 provided under the first gas baffle 2, and mounting substrate 4 provided under the second gas baffle 3 , The mounting substrate 4 is connected to the gas shower head 5; the support baffle 1 and the mounting substrate 4 form a closed space; the first gas baffle 2 and the second gas baffle 3 are disposed in the closed space ; The bottom of the support baffle 1 is in contact with the mounting substrate 4 is provided with a seal ring accommodating groove 13, the seal ring accommodating groove 13 is provided with a seal ring, so that the entire gas mixing device can be isolated from the atmosphere during use The support baffle 1, the first gas baffle 2 and the second gas baffle 3 are connected and fixed by bolts 6; the support baffle 1 and the mounting substrate 4 are connected by bolts 6; preferably, the material of the bolt 6 Hastelloy material to prevent gas corrosion.

The supporting baffle 1 is provided with at least one first gas inlet hole 11 for introducing the first gas and at least one second gas inlet hole 12 for introducing the second gas; in a specific embodiment In the support baffle 1, three first gas inlet holes 11 may be provided for passing HBr corrosive gas, and three second gas inlet holes 12 may be provided for passing Cl ₂ corrosive gas. In practical applications, the intake pipe 7 is connected to the first gas inlet hole 11 and the second gas inlet hole 12 to pass the corrosive gas into the gas mixing device. Preferably, the material of the intake pipe 7 is Hastelloy material to prevent gas corrosion.

The first gas baffle 2 is provided with a first mixing channel 21 for mixing the first gas and the second gas and at least one first mixed gas outlet hole penetrating the first gas baffle 2; further, the The first mixing channel 21 may be an irregular curved groove structure provided on the first gas baffle 2; further, the first mixing channel 21 may be a free combination of a plurality of horizontal tubes, straight tubes, and curved tubes And connected to each other. By providing the first mixing channel 21, the mixing time of the gas can be increased, and the mixing of the gas can be uniform.

The second gas baffle 3 is provided with a second mixing channel 31 for mixing the first gas and the second gas and at least one second mixed gas outlet hole penetrating the second gas baffle 3; further, the The second mixing channel 31 may be an irregularly curved groove structure provided on the second gas baffle 3; further, the second mixing channel 31 may be a free combination of a plurality of horizontal tubes, straight tubes, and curved tubes And connected to each other. By providing the second mixing channel 31, the mixing time of the gas can be increased, and the gas can be mixed uniformly.

At least one third mixed gas outlet hole 41 is provided on the mounting substrate 4;

The first mixed gas outlet is connected to the second mixing channel 31, and the reaction gas mixed through the first gas baffle 2 is sent to the second mixing channel 31 for secondary mixing;

The reaction gas flowing out of the second mixed gas outlet hole enters the gas shower head 5 through the third mixed gas outlet hole 41;

In one embodiment, a gas diffusion space 9 is provided between the second gas baffle 3 and the mounting substrate 4 to extend the mixing time of the reaction gas and achieve the goal of more thorough mixing and uniformity.

The inner walls of the first gas inlet hole 11, the second gas inlet hole 12 and the third mixed gas outlet hole 41, the bottom surface of the support baffle 1 and the top surface of the mounting substrate 4 are provided with an yttrium oxide coating; wherein The material of the support baffle 1 and the mounting substrate 4 is aluminum; preferably, the purity of the yttrium oxide in the yttrium oxide coating is greater than 99.9%, and the porosity of the yttrium oxide coating is less than 5%. Improve the corrosion resistance of yttrium oxide coating. The thickness of the yttrium oxide coating on the bottom surface of the support baffle 1 is 20-110 μm; the thickness of the yttrium oxide coating on the inner walls of the first gas inlet hole 11 and the second gas inlet hole 12 is 50-100 μm; installation The thickness of the yttrium oxide coating on the top surface of the substrate 4 is 20-110 μm; the thickness of the yttrium oxide coating on the inner wall of the third mixed gas outlet hole 41 is 10-30 μm. The thickness of the yttrium oxide coating on the inner wall of the air hole is determined by the inner diameter of the air hole itself and the spraying method. The above yttrium oxide coating can be prepared by plasma spraying. Yttrium oxide itself is a very stable and corrosion-resistant material, so spraying it on the surface of the support baffle 1 and the mounting substrate 4 can effectively protect the aluminum itself from corrosion during the mixing of corrosive gases. At present, the method of making an anodized layer on the surface of aluminum material is more corrosion-resistant and cost-saving.

The material of the first gas baffle 2 and the second gas baffle 3 is anti-corrosion plastic. Preferably, the anti-corrosion plastic is Teflon or Vespel. The materials of the first gas baffle 2 and the second gas baffle 3 are made of anti-corrosion plastic. Also, since the anti-corrosion plastic is very stable and has good anti-corrosion performance, it will not be corroded during the gas mixing process.

As shown in FIG. 2, in another embodiment of the present invention, the whole of the first gas baffle 2 and the second gas baffle 3 is formed on the left and right sides of the enclosed space for gas mixing Cavity 8; the support baffle 1 at the top of the cavity 8 is provided with at least one first gas inlet hole 11 and at least one second gas inlet hole 12; on the mounting substrate 4 at the bottom of the cavity 8 At least one third mixed gas outlet hole 41 is provided. In this embodiment, a cavity 8 is added to each of the left and right sides of the enclosed space to realize gas mixing in three regions, so as to improve the practicality and flexibility of the gas mixing device in the actual application process.

FIG. 3 is a schematic structural diagram of a plasma processing apparatus provided by the present invention. The apparatus includes a vacuum reaction chamber 100. The vacuum reaction chamber 100 includes a substantially cylindrical reaction chamber sidewall 105 made of a metal material, and the reaction chamber sidewall 105 A gas spraying device 150 is provided above, and the gas spraying device is connected to the gas supply device 160 through the gas mixing device 155 provided by the present invention. The reaction gas in the gas supply device 160 enters the vacuum reaction chamber 100 through the gas spraying device 150, and a base 110 supporting an electrostatic chuck 115 is disposed below the vacuum reaction chamber 100. The substrate 120 and the RF power of the RF power source 145 are applied to the susceptor 110 to generate an electric field in the reaction chamber that dissociates the reaction gas into plasma. The plasma contains a large number of electrons, ions, excited atoms, molecules, and free Based on active particles such as substrates, the above active particles can undergo various physical and chemical reactions with the surface of the substrate 120 to be processed, so that the surface morphology of the substrate changes, that is, the etching process is completed. An exhaust pump 125 is also provided below the vacuum reaction chamber 100 for discharging reaction by-products out of the vacuum reaction chamber.

Applying the plasma processing equipment provided by the present invention to actual production, Cl ₂ and HBr are mixed through a gas mixing device, come out of a gas shower head, and enter a reaction chamber for plasma etching. After running for more than 200 hours, no signs of corrosion were found on the surface of the gas mixing device after inspection.

In summary, since yttrium oxide itself is a very stable and corrosion-resistant material, spraying it on the surface of the support baffle and the mounting substrate can effectively protect the aluminum material from the corrosion gas during the mixing process Corrosion; the material of the first gas baffle and the second gas baffle is made of anti-corrosion plastic. Also because the anti-corrosion plastic is very stable and has good anti-corrosion performance, it will not be corroded during the gas mixing process. Using the corrosion-resistant gas mixing device provided by the present invention is more corrosion-resistant than the current method of forming an anodized layer on the surface of the aluminum material, and saves costs. The problem of corrosion of the gas mixing device during the mixing process of the corrosive gas is fundamentally solved, thereby greatly prolonging the service life of the gas mixing device, thereby avoiding the influence of the impurities generated by the corrosion of the gas mixing device on the subsequent process.

Although the content of the present invention has been described in detail through the above preferred embodiments, it should be recognized that the above description should not be considered as a limitation of the present invention. After a person of ordinary skill in the art reads the above, various modifications and substitutions to the present invention will be apparent. Therefore, the protection scope of the present invention should be defined by the scope of the attached patent application.

1‧‧‧Baffle 11‧‧‧ First gas inlet 12‧‧‧ Second gas inlet 13‧‧‧Sealing groove for sealing ring 2‧‧‧ First gas baffle 21‧‧‧The first mixing channel 3‧‧‧Second gas baffle 31‧‧‧The second mixing channel 4‧‧‧Mounting board 41‧‧‧Second mixed gas outlet 5‧‧‧ gas sprinkler 6‧‧‧bolt 7‧‧‧ Intake pipe 8‧‧‧cavity 9‧‧‧Gas diffusion space 100‧‧‧Vacuum reaction chamber 105‧‧‧ reaction chamber side wall 110‧‧‧Dock 115‧‧‧Support electrostatic chuck 120‧‧‧Pending substrate 125‧‧‧Exhaust pump 145‧‧‧ RF power source 150‧‧‧Gas spray device 155‧‧‧Gas mixing device 160‧‧‧Gas supply device

1 is a partial structural schematic diagram of an embodiment of a gas mixing device provided by the present invention;

2 is a schematic structural diagram of an embodiment of a gas mixing device provided by the present invention;

3 is a schematic structural diagram of a plasma processing apparatus provided by the present invention.

1‧‧‧Baffle

13‧‧‧Sealing groove for sealing ring

2‧‧‧ First gas baffle

3‧‧‧Second gas baffle

4‧‧‧Mounting board

41‧‧‧Second mixed gas outlet

5‧‧‧ gas sprinkler

6‧‧‧bolt

7‧‧‧ Intake pipe

8‧‧‧cavity

9‧‧‧Gas diffusion space

Claims (12)

A corrosion-resistant gas mixing device, including: A support baffle, a first gas baffle provided under the support baffle, a second gas baffle provided under the first gas baffle, and a mounting substrate provided under the second gas baffle The mounting substrate is connected to a gas shower head; the supporting baffle and the mounting substrate form a closed space; the first gas baffle and the second gas baffle are provided in the closed space; The support baffle is provided with at least one first gas inlet hole for introducing the first gas and at least one second gas inlet hole for introducing the second gas; The first gas baffle is provided with a first mixing channel for mixing the first gas and the second gas and at least one first mixed gas outlet hole penetrating the first gas baffle; The second gas baffle is provided with a second mixing channel for mixing the first gas and the second gas and at least one second mixed gas outlet hole penetrating the second gas baffle; At least one third mixed gas outlet hole is provided on the mounting substrate; The first mixed gas outlet is connected to the second mixing channel, and the reaction gas mixed through the first gas baffle is sent to the second mixing channel for secondary mixing; The reaction gas flowing out of the second mixed gas outlet hole enters the gas shower head through the third mixed gas outlet hole; An inner wall of the first gas inlet hole, the second gas inlet hole and the third mixed gas outlet hole, the bottom surface of the supporting baffle and the top surface of the mounting substrate are provided with an yttrium oxide coating; the first The material of the gas baffle and the second gas baffle is anti-corrosion plastic. The corrosion-resistant gas mixing device as described in item 1 of the patent application range, wherein a gas diffusion space is provided between the second gas baffle and the mounting substrate. The corrosion-resistant gas mixing device as described in item 1 of the patent application range, wherein the purity of the yttrium oxide in the yttrium oxide coating is greater than 99.9%. The corrosion-resistant gas mixing device as described in item 1 of the patent application range, wherein the porosity of the yttrium oxide coating is less than 5%. The corrosion-resistant gas mixing device as described in item 1 of the patent application range, wherein the yttrium oxide coating is prepared by plasma spraying. The corrosion-resistant gas mixing device as described in item 1 of the patent application range, wherein the thickness of the yttrium oxide coating on the bottom surface of the support baffle is 20-110 μm; the first gas inlet hole and the second gas inlet The thickness of the yttrium oxide coating on the inner wall of the gas hole is 50-100 μm; the thickness of the yttrium oxide coating on the top surface of the mounting substrate is 20-110 μm; the yttrium oxide coating on the inner wall of the third mixed gas outlet hole The thickness of the layer is 10-30 μm. The corrosion-resistant gas mixing device as described in item 1 of the patent application range, wherein the corrosion-resistant plastic is Teflon or polyimide. The corrosion-resistant gas mixing device as described in item 1 of the patent application range, wherein the material of the support baffle and the mounting substrate is aluminum. The anti-corrosion gas mixing device as described in item 1 of the patent application range, wherein the whole of the first gas baffle and the second gas baffle forms a gas mixture for the left and right sides of the sealed space A cavity; the support baffle at the top of the cavity is provided with at least one first gas inlet hole and at least one second gas inlet hole; the mounting substrate at the bottom of the cavity is provided with at least one The third mixed gas outlet. The corrosion-resistant gas mixing device as described in item 1 of the patent application range, wherein a seal ring accommodating groove is provided at the bottom of the support baffle in contact with the mounting substrate, and a seal ring is provided in the seal ring accommodating groove. The corrosion-resistant gas mixing device as described in item 1 of the patent application range, wherein the support baffle, the first gas baffle, and the second gas baffle are integrally connected by bolts; the support baffle and the mounting substrate Connect by bolts. A plasma processing apparatus, wherein the plasma processing apparatus includes a corrosion-resistant gas mixing device as described in any of items 1 to 11 of the patent application range.

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